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FTP540

N-Channel MOSFET
Pb Lead Free Package and Finish
Applications: HF Halogen Free
Automotive VDSS RDS(on)(Max) ID
DC Motor Control
Class D Amplifier
100V 48m 33A

Features: D
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves G
G
D
S
Ordering Information
PART NUMBER PACKAGE BRAND TO-220 Not to Scale S
FTP540 TO-220 FTP540

Absolute Maximum Ratings Tc= 25 unless otherwise specified


Symbol Parameter Maximum Units
VDSS Drain-to-Source Voltage (NOTE *1) 100 V

ID Continuous Drain Current 33


ID@ 100 Continuous Drain Current Figure 3 A

IDM Pulsed Drain Current, VGS@ 10V (NOTE *2) 110

Power Dissipation 128 W


PD
Derading Factor above 25 0.86 W/

V GS Gate-to-Source Voltage 20 V
Single Pulse Avalanche Energy
E AS 260 mJ
L=1.3 mH, ID=20 Amps
I AS Pulsed Avalanche Rating Figure 8 A

dv/dt Peak Diode Recovery dv/dt (NOTE *3) 3.0 V/ns


Maximum Temperature for Soldering
TL
Leads at 0.063in(1.6mm) from Case for 10 seconds 300
T PKG
Package Body for 10 seconds 260
T J and T STG Operation Junction and Storage Temperature Range -55 to 175
*Drain Current limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in Absolute Maximum Ratings Table may cause permanent damage to the device.

Thermal Resistance
Symbol Parameter Maximum Units Test Condition
Water cooled heat sink, P D adjusted for a
R JC Junction-to-Case 1.17 /W peak junction temperature of +175 .

R JA Junction-to-Ambient 62 /W 1 cubic foot chamber, free air.

2009 InPower Semiconductor Co., Ltd. Page 1 of 10 FTP540 Preliminary. Mar. 2009
Electrical CharacteristicsT J = 25 unless otherwise specified
OFF Characteristics
Rating
Symbol Parameter Units Test Conditions
Min. Typ. Max.
V DSS Drain-to-Source Breakdown Voltage 100 -- -- V V GS =0V, I D =250A
Reference to 25 ,
BV DSS /T J Bvdss Temperature Coefficient -- 0.71 -- V/
ID=250uA
V DS = 100V, V GS = 0V,
-- -- 25
T a = 25
I DSS Drain-to-Source Leakage Current uA
V DS =80V, V GS = 0V,
-- -- 250
T a = 125
I GSS(F) Gate-to-Source Forward Leakage -- -- +100 V GS =+20V
nA
I GSS(R) Gate-to-Source Reverse Leakage -- -- -100 V GS =-20V

ON Characteristics
Rating
Symbol Parameter Units Test Conditions
Min. Typ. Max.
V GS =10V,I D =16A
R DS(ON) Drain-to-Source On-Resistance -- 43 48 m
(NOTE*4)
V GS(TH) Gate Threshold Voltage 2.0 -- 4.0 V V DS = V GS , I D = 250A
V DS =30V, I D =16A
g fs Forward Transconductance -- 21 -- S
(NOTE*4)

Dynamic Characteristics
Rating
Symbol Parameter Units Test Conditions
Min. Typ. Max.
C iss Input Capacitance -- 1614 -- V GS = 0V
V DS = 25V
C oss Output Capacitance -- 511 -- pF
f = 1.0MHz
Figure 14
C rss Reverse Transfer Capacitance -- 204 --

Qg Total Gate Charge -- 48 -- V DD =80V


I D =16A
Q gs Gate-to-Source Charge -- 7.2 -- nC
V GS = 10V
Q gd Gate-to-Drain (Miller)Charge -- 23 -- Figure 15

Resistive Switching Characteristics


Rating
Symbol Parameter Units Test Conditions
Min. Typ. Max.
t d(ON) Turn-on Delay Time -- 13 --
V DD = 50V
trise Rise Time -- 30 -- I D =16A
ns
V GS = 10V
t d(OFF) Turn-Off Delay Time -- 50 --
R G = 5.1
t fall Fall Time -- 25 --

2009 InPower Semiconductor Co., Ltd. Page 2 of 10 FTP540 Preliminary. Mar. 2009
Source-Drain Diode Characteristics
Rating
Symbol Parameter Units Test Conditions
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 33 A
Integral pn-diode in
MOSFET
I SM Maximum Pulsed Current (Body Diode) -- -- 110 A

V SD Diode Forward Voltage -- -- 1.5 V I S =16A,V GS =0V

trr Reverse Recovery Time -- 145 175 ns V GS =0V


I F =16A,
Qrr Reverse Recovery Charge -- 624 745 nC di/dt=100A/us

Notes:

*1. TJ=+25 to +175.


*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD=16A di/dt100A/us, VDDBVDSS, TJ=+175.
*4. Pulse width380us; duty cycle2%.

2009 InPower Semiconductor Co., Ltd. Page 3 of 10 FTP540 Preliminary. Mar. 2009
Characteristics Curve
1000 150

125

100us

Pd, Power Dissipation, Watts


Id, Drain Current, Amps

100 100
1ms

10ms 75

100ms
50
10 OPERATION IN THIS AREA MAY
BE LIMITED BY RDS(on)
Tj=MAX RATED Tc=25 C DC
25

1.0 0.0

0.0 10 100 25 50 75 100 125 150


Vds, Drain Source Voltage, Volts Tc, Case Temperature, C
Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature
35
40
30 Vgs=15V

25 30
Vgs=7.0
Id, Drain Current, Amps
Id, Drain Current, Amps

V
20
Vgs=6.5
V
15 20

10 Vgs=6.0
V
10 Vgs=5.5
5.0 V
Vgs=4.5
V
0.0 0.0
25 50 75 100 125 150 175 0 5 10 15 20 25
Tc, Case Temperature, C
Vds, Drain Source Voltage, Volts
Figure 3 Maximum Continuous Drain Current vs Case
Temperature Figure 4 Typical Output Characteristics
1.00
1.000

50%
20%
Thermal Impedance, Normanlized

10%
0.100
0.100
5% PDM
2%
t1
1% 1 t2
0.010 1
0.010
Single pulse NOTES:
DUTY FACTOR:D=t1/t2
PEAK Tj=PDMZthJCRthJC+TC

0.001
0.001

0.00001
0.00001
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
1
1
10
10

Rectangular Pulse Duration, Seconds

Figure 5 Maximum Effective Thermal Impedance, Junction to case

2009 InPower Semiconductor Co., Ltd. Page 4 of 10 FTP540 Preliminary. Mar. 2009
100
TRANSCONDUCTANCE MAY FOR TEMPERATURES
LIMIT
ABOVE 25 DERATE PEAK
CURRENT IN THIS REGION FTP540
Idm, Peak Current, Amps

CURRENT AS FOLLOWS:

I = I25 150-TC
125
100

10
10.0E-6 100.0E-6 1.0E-3 10.0E-3 100.0E-3 1.0E+0 10.0E+0
t, Pulse Width, Seconds
Figure 6 Maximum Peak Current Capability

2009 InPower Semiconductor Co., Ltd. Page 5 of 10 FTP540 Preliminary. Mar. 2009
Test Circuit and Waveform:

V
DS
ID
ID
V DS V
Miller GS
Region
VGS
VD D
D.U.T.
V
G S(T H)

1 mA
Qgs Qg d
Q
g

Figure 17.
Figure 7 Gate Charge
Gate Test
Charge Circuit
Test Circuit Figure 8 Gate Charge
Figure Waveform
18. Gate Charge Waveform

VD S
R
L 90%
V DS

V GS
V
DD
R D.U.T.
G 10%
V
GS

t trise td(OFF) tf all


d (O N)

Figure
Figure 9 Resistive
19. Resistive Switching
Switching Test Circuit
Test Circuit Figure
Figure1020. Resistive
Resistive Switching
SwitchingWaveforms
Waveform

2009 InPower Semiconductor Co., Ltd. Page 6 of 10 FTP540 Preliminary. Mar. 2009
Test Circuit and Waveform:

di/dt adj. Current


Pump

di/dt = 100A/A
ID
Double Pulse

D.U.T. VD D
Qrr
L
t
rr

ID

Figure 22. Diode Reverse Recovery Waveform

Figure 11 Diode Reverse Recovery Test Circuit Figure 12 Diode Reverse Recovery Waveform
Figure 21. Diode Reverse Recovery Test Circuit

BV
DS S

Series Switch
(MOSFET)
L
I
AS

BVD S S

D.U.T. VDD VD D
Commutating
Diode
0 tAV

V GS 50
IAS
V t
GS p

Figure 13 Undamped Inductive Switching Test Circuit Figure 14 Undamped Inductive Switching Waveform
Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Uncl amped Inductive Switching Waveforms

2009 InPower Semiconductor Co., Ltd. Page 7 of 10 FTP540 Preliminary. Mar. 2009
Package Information

Unit:

TO-220 Package

2009 InPower Semiconductor Co., Ltd. Page 8 of 10 FTP540 Preliminary. Mar. 2009
Parts Name Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit 0.1% 0.1% 0.01% 0.1% 0.1% 0.1%

Lead Frame
Molding Compound
Chip
Wire Bonding
Solder

Means the hazardous material is under the criterion of SJ/T11363-2006.


Means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within
the allowed range of Eurogroups RoHS.

2009 InPower Semiconductor Co., Ltd. Page 9 of 10 FTP540 Preliminary. Mar. 2009
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reliability, function or design and to discontinue any product or service without notice. Customers should obtain the
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Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessarily
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Life Support Policy:

InPower Semiconductor Co., Ltds products are not authorized for use as critical components in life support devices
or
systems without the expressed written approval of InPower Semiconductor Co., Ltd.

As used herein:
1. Life support devices or systems are devices or systems which:
a. are intended for surgical implant into the human body,
b. support or sustain life,
c. whose failure to perform when properly used in accordance with instructions
for used provided in the labeling, can be reasonably expected to result in significant
injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

2009 InPower Semiconductor Co., Ltd. Page 10 of 10 FTP540 Preliminary. Mar. 2009