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SOIC-8
D
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D
D
D
D
G
G
S S
S
S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 31 40 C/W
RJA
Maximum Junction-to-Ambient A D Steady-State 59 75 C/W
Maximum Junction-to-Lead Steady-State RJL 16 24 C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100 80
VDS=5V
80
60
60
ID (A)
ID(A)
40
40
125C 25C
20
20
0 0
0 1 2 3 4 5 0.5 1 1.5 2 2.5
10 1.4
Normalized On-Resistance
8
VGS=2.5V
1.2
RDS(ON) (m )
6
17
5
4 2
VGS=4.5V 1
10
2
0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
0
ID (A) Temperature (C) 18
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage (Note E) (Note E)
10 1.0E+02
ID=20A
9 1.0E+01
40
8 1.0E+00
RDS(ON) (m )
7 1.0E-01
IS (A)
125C
6 1.0E-02
5 1.0E-03
4 1.0E-04
25C
3 1.0E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
(Note E) Figure 6: Body-Diode Characteristics (Note E)
Capacitance (pF)
VGS (Volts)
4000
6
3000
4
2000 Coss
2 1000
0 Crss
0 0 5 10 15 20
0 20 40 60 80 100 VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000.0 1000.0
IAR (A) Peak Avalanche Current
100.0
ID (Amps)
10.0
100.0
1.0
10ms
0.1
0.0
10.0
0.01 0.1 1 10 100
1 10 100 1000
s)
Time in avalanche, tA (
Figure 9: Single Pulse Avalanche capability (Note VDS (Volts)
C)
10000
TA=25C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
10
D=Ton/T In descending order
Z JA Normalized Transient
1 RJA=75C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds