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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY Low gate charge Qg results in simple drive
VDS (V) 600 requirement Available
RDS(on) () VGS = 10 V 0.75 Improved gate, avalanche and dynamic dV/dt
Qg max. (nC) 49 ruggedness Available
G APPLICATIONS
Switch mode power supply (SMPS)
Uninterruptible power supply
S High speed power switching
G D S High voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
N-Channel MOSFET
ORDERING INFORMATION
Package TO-220 FULLPAK
IRFIB6N60APbF
Lead (Pb)-free
SiHFIB6N60A-E3
IRFIB6N60A
SnPb
SiHFIB6N60A
100 100
VGS
TOP 15V
10V
8.0V
I D , Drain-to-Source Current (A)
TJ = 25 C
1 1
4.7V
100 3.0
VGS ID = 9.2A
RDS(on) , Drain-to-Source On Resistance
TOP 15V
10V
I D , Drain-to-Source Current (A)
8.0V
7.0V 2.5
6.0V
5.5V
5.0V
BOTTOM 4.7V
2.0
(Normalized)
10 1.5
1.0
4.7V 0.5
20s PULSE WIDTH
TJ = 150 C VGS = 10V
1 0.0
1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature ( C)
Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature
2400 100
V GS = 0V, f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
iss
C, Capacitance (pF)
1600 10
oss
TJ = 150 C
1200
800 1
TJ = 25 C
rss
400
V GS = 0 V
0 A 0.1
1 10 100 1000 0.2 0.5 0.7 1.0 1.2
VDS , Drain-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 1000
ID = 9.2A
OPERATION IN THIS AREA LIMITED
VDS = 480V BY RDS(on)
VGS , Gate-to-Source Voltage (V)
16 VDS = 300V
VDS = 120V 100
I D , Drain Current (A)
12 10us
10
100us
8
1ms
1
4 10ms
TC = 25 C
FOR TEST CIRCUIT TJ = 150 C
SEE FIGURE 13 Single Pulse
0 0.1
0 10 20 30 40 50 10 100 1000 10000
QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
RD
VDS
6.0
VGS
D.U.T.
RG
5.0 +
- VDD
ID , Drain Current (A)
4.0 10 V
Pulse width 1 s
Duty factor 0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
VDS
90 %
1.0
0.0
25 50 75 100 125 150
10 %
TC , Case Temperature ( C)
VGS
t d(on) tr t d(off) t f
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50
1
0.20
0.10
P DM
0.05
0.1
t1
0.02
t2
0.01
SINGLE PULSE Notes:
(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V DS
15 V tp
L Driver
VDS
RG D.U.T. +
- VDD
A
IAS A
20 V
tp 0.01 I AS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
600
ID
EAS , Single Pulse Avalanche Energy (mJ)
TOP 4.1A
500 5.8A
BOTTOM 9.2A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
QG 50 k
12 V 0.2 F
10 V 0.3 F
QGS Q GD +
VDS
D.U.T. -
VG VGS
3 mA
Charge IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
- +
-
Rg dV/dt controlled by Rg +
Driver same type as D.U.T. VDD
-
ISD controlled by duty factor D
D.U.T. - device under test
VGS = 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple 5 % ISD
Note
a. VGS = 5 V for logic level devices
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91175.
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