RF Nutshell

Mirowave Transistors
Modeling method
¨ çS-parameters : up to meas. freqs.
¨ èEquivalent ckt
- freq. extrapolation
- physical
Y. Kwon Chap 11 : Amplifiers & Oscillators 1 Microwave Engineering Course Note, SoEE, SNU
GaAs FET
Physical structure fT( current gain cut-off freq )
S G D I g V g
H 21 = d ≈ m ≈ m
Ig ωC gsV ωC gs
gm
fT =
2πC gs
Biasing scheme
Intrinsic EC model( no pad )
Rg Cgd Rd
+
V Cgs
-
Ri Gm Rds Cds
Rs
1
Power Gains
Zs Formula
S 21 (1 − ΓL )
2 2
Vs Pavs Pin [S ] PavL PL ZL G=

(1 − Γin ) 1 − S 22ΓL
2 2
S21 (1 − ΓS )
2 2
GA =
Γs Γin Γout ΓL 1 − S11ΓS (1 − Γout )
2 2
Power Gain Definition S 21 (1 − ΓS )(1 − ΓL )

2 2 2
GT =
¨ çPower gain = G 1 − ΓS Γin 1 − S 22ΓL
2 2
PL
G= : indep of Zs
S21 (1 − ΓS )(1 − ΓL )
2 2 2
Pin
GTU = GT S12 = 0
=
1 − S11ΓS 1 − S 22ΓL
2 2
¨ èAvailable gain = GA
P
G A = avL : indep of ZL
Pavs
¨ éTransducer Power gain = GT
PL
GT = : dep on ZS and ZL
Pavs
Amplifier Gain - S-parameter Approach
2
S 21L
[G]L =
1 − ΓL
2
2 2 2
S 21S S 21 S 21L
GTtot =
1 − S 22 S Γin 1 − S 22 ΓL
2 2
P P P
• GTtot = L , S ⋅ out , D ⋅ L , L
Pavs Pin, D Pin , L 2 2
S 22 S = ΓS → S 21S = 1 − ΓS
= [GT ]S ⋅ [G ]D ⋅ [G ]L
S11L = ΓL → S 21L = 1 − ΓL
2 2
S 21S (1 − Γin )
2 2
[GT ]S =
1 − S 22 S Γin
2
(1 − ΓS ) S 21 (1 − ΓL )
2 2 2
S 21 (1 − ΓL )
2 2
GTtot =
[G ]D = 1 − Γin ΓS 1 − S 22ΓL
2 2
(1 − Γin ) 1 − S 22ΓL
2 2
2
Amplifier Gain - from Equivalent Circuit
Matching condition (Assume

1 Cgd=0 S12=0)
Z in = Z S* ⇒ X =
ωCgs
Z out = Z L* ⇒ B = −ωCds
1 2
g mVc Rds 2
8 g m2 Rds R  fT 
• GTU = = = ds  
1 2
Vs / Ri 4 ω 2
R C 2
i gs 4 Ri  f 
8
⇒ 6dB / oct roll − off
Maximum frequency of oscillation
fT Rds
f max = → most important parameter for Amp., Osc.
2 Rin
Stability
Stability Circle
Γin = 1 circle in ΓL - plane
ΓS ΓL output stability circle
Γout = 1 circle in ΓS - plane
Γin Γout input stability circle
S12 S 21 for Γin = 1

Γin = S11 +
1 − S 22 ΓL (S 22 − ∆S11* )* S12 S21
ΓL − 2 2
= 2 2
S22 − ∆ S 22 − ∆
S S Γ
Γout = S 22 + 12 21 S
1 − S11ΓS S12 S21
Radius( RL ) = 2 2
S 22 − ∆
∴ for some ΓS, ΓL, Γin, Γout can be
greater than 1 ( S 22 − ∆S11* )*
Center( CL ) =
S22 − ∆
2 2
unstable!
3
Stability Circle
Stable region?( output )
i) S11 < 1
for ΓL = 0, Γin = S11 < 1
stable for region containing ΓL = 0
ii) S11 > 1
stable for region excluding ΓL = 0
Amplifier Stability
Stability Conditions ( iff )

(1) Unconditional Stability
1− S11 − S22 + ∆
2 2 2
K= > 1
⇒ f or all Γs and Γl 2 S12S21
2
Γin , Γout < 1

where, ∆ = S11S22 − S12S21
(2) Conditional Stability
⇒ f or some Γs and Γl Conditional Stable

Γin , Γout < 1 ⇒ Need to choose Γs , Γl
for stable region
4
Narrowband Amplifier Design
Maximum gain
 Γin = ΓS*

ΓS Γout = ΓL
*
DUT ΓL
1 − ΓL
2
1
GT max =
2
S 21
1 − ΓS
2
1 − S 22ΓL
2
Γin Γout
Condition for simultaneous
2 2
(1 − ΓS ) (1 − ΓL ) match
S12 S 21ΓL
GT = ⋅ S 21 ⋅
2
ΓS* = S11 +
1 − ΓS Γin
2
1 − S 22 ΓL
2
1 − S 22 ΓL
S12 S 21ΓS
= GS ⋅ G0 ⋅ GL ΓL* = S 22 +
1 − S11ΓS
2 
1 − ΓS
2
B ± B12 − 4 C1
Γ = 1
GS = 2
 S

2C1
1 − ΓS Γin  B2 ± B22 − 4 C 2
2
ΓL =
 2C2
1 − ΓL
2
GL = where B1 = 1 + S11 2 − S 22 2 − ∆ 2 C1 = S11 − ∆S22*

1 − S 22 ΓL
2
B2 = 1 + S 22 − S11 − ∆ C 2 = S 22 − ∆S11*
2 2 2
Unilateral Case
Unilateral Transducer Gain Condition for Simultaneous

Match
Γin = S11 , Γout = S 22
∗ ∗
Γs = S11 , Γl = S 22
S21 (1− Γs ) (1− Γl )
2 2 2
GTU = 2 2 Maximum Unilateral Gain

1− S11Γs 1− S22Γl
1 1
GTUmax =
2
S21
1− S11
2
1− S22
2
5
Mismatched Amp Design - Gain Circles(unilateral)
Gain for unilateral case Gain factor gs, gL
GS G
G = GS max ⋅ S 21 ⋅ GL max ⋅
2
G = GS ⋅ S 21 ⋅ GL ⋅ L
2
GS max GL max
2
1 − ΓS = Gmax ⋅ g S ⋅ g L
GS = 2 GS GL
1 − S11ΓS where g S = G , gL =
S max GL max
1 − ΓL
2
GL = Gain circles
2
1 − S 22ΓL For given gS, find ΓS
1 − ΓS
2
GS
gS = = (1 − S11 )
2
Maximum unilateral gain
GS max 1 − S11ΓS 2
1
GS max = GS Γ = S * =  g S S11*
 CS =
1 − S11
S 11
2
1 − (1 − g S ) S11
2

 2
R = 1 − g S (1 − S11 )
1
GL max = GL Γ =  S 1 − (1 − g S ) S11
2

L = S 22
*
1 − S 22
2
Circles!
¨ çcenter : on the line to S*11
¨ èΓS=0→GS=1 0dB circle cross
the center
Gain Circle and Bandwidth

1. Exact match design
2. Mismatch design
Choose ΓS and ΓL close to

the center of Smith chart
for max bandwidth
6
Low Noise Amplifier Design
Noise figure of 2-port device Noise figure parameters
R 2
circles
F = Fmin + N YS − Yopt
GS F −F 2
where YS = GS + jBS , Yopt = Gopt + jBopt N = 4 R min 1 + Γopt
N
Z0
4 noise parameters determined by noise parameters
¨ çFmin ¨ èRn Constant Noise figure circles

2
¨ éGopt ¨ êBopt ΓS − Γopt

N=
1 − ΓS
2
S-parameter representation 2
Γopt N ( N + 1 − Γopt )
ΓS − =
2
4 RN ΓS − Γopt
F = Fmin + N +1 ( N + 1)
2
Z 0 (1 − Γ 2 ) 1 + Γ
S opt
∗ Circle center on a straight line from
the center to Γopt
Low Noise Amplifier Design( cont d )

Amplifier design
RL, Stability, Bandwidth
LNA design
RL, Stability, NF, Bandwidth
Compromise between NF, RL,

Stability and Gain
7
Oscillator - Types
High Q
bandpass
output filter
High Q
Reflector output
negative
feedback
<Reflection type> <Transmission type>
Two types of VCO

Transmission type : amplifier mode ð straightforward
Reflection type : negative resistance mode : less feed structure
ð potentially higher Q factor
One - port Negative Resistance Oscillator
Negative Resistance S-parameter representation

Device Z − Z 0 − Z in − Z 0 1
ΓL = L = =
I Z L + Z 0 − Z in + Z 0 ΓL
⇒ ΓL ⋅ Γin = 1 at s.s
V
Gunn diode , IMPATT, TUNNET Stable oscillation with
perturbations in I or frequency,
Circuit go back to original oscillation
status
Z in ( I , ω ), Z L (ω )
∂( X L + X in )
KVL
⇒ >> 0
→ ( Z L + Z in ) I = 0 ∂ω
⇒ RL + Rin = 0
∴ High Q resonator needed
X L + X in = 0
8
Transistor Oscillator
Termination
Load
Simultaneous Oscillation
(resonator)
- output oscilltor
ΓL ⋅ Γout = 1
ΓT Γin Γout ΓL S12 S21ΓT S 22 − ∆ΓT
Γout = S22 + =
1 − S11ΓT 1 − S11ΓT
Design procedure 1 − S22ΓL
ΓT =
¨ çChoose ΓT for max Γout (>1) S11 − ∆ΓL
Z out = Rout + jX out S11 − ∆ΓL
Γin =
⇒ Maximize Rout (negative) 1 − S22ΓL
∴ ΓT ⋅ Γin = 1
¨ èChoose Z L = RL + jX L
Rout
RL = − ( for max power ) Input oscillation
3
X L = − X out
(Large signal S-parameter)
DRO:Dielectric Resonator Oscillator
• Γ at the resonator plane

(Z0 + N 2 R) − Z 0 g
Γ= =
Z 0 + N R + Z0 1 + g
2
∴ MeasureΓ → find g → find N 2 R
N 2R
Z= (equivalent
1 + j 2Q∆ω / ω 0
series impedance)
• Coupling factor
Q R / ω0L
g= = ( RL = 2 Z 0 )
Qe RL / N 2ω 0 L
9
DRO Design
¨ éTransform ΓL to Γ L
′
ΓL = ΓL e j 2 βlr
¨ êFind Z L
′
′ 1 + ΓL
ZL = Z0
′
1 − ΓL
¨ ëFind g
′
ZL
g= ( note : ZL= Z0 )
Z0
Γout vs frequency (effect of DR)
Design Procedure
¨ çFind ΓL for max |Rout|
¨ èDesign output matching circuit
Rout
ZT = − − jX out
3
10

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Mirowave Transistors

Vs Pavs Pin [S ] PavL PL ZL G=

Power Gain Definition S 21 (1 − ΓS )(1 − ΓL )

Amplifier Gain - S-parameter Approach

Matching condition (Assume

Γin Γout input stability circle

S12 S 21 for Γin = 1

ii) S11 > 1

stable for region excluding ΓL = 0

Stability Conditions ( iff )

Γin , Γout < 1

⇒ f or some Γs and Γl Conditional Stable

GL = where B1 = 1 + S11 2 − S 22 2 − ∆ 2 C1 = S11 − ∆S22*

Unilateral Transducer Gain Condition for Simultaneous

GTU = 2 2 Maximum Unilateral Gain

Gain Circle and Bandwidth

Choose ΓS and ΓL close to

4 noise parameters determined by noise parameters

¨ çFmin ¨ èRn Constant Noise figure circles

¨ éGopt ¨ êBopt ΓS − Γopt

Low Noise Amplifier Design( cont d )

Compromise between NF, RL,

<Reflection type> <Transmission type>

Two types of VCO

One - port Negative Resistance Oscillator

Negative Resistance S-parameter representation

DRO:Dielectric Resonator Oscillator

• Γ at the resonator plane

∴ MeasureΓ → find g → find N 2 R

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