AP4957AGM

RoHS-compliant Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

Low On-Resistance D2
BVDSS -30V
D2
Simple Drive Requirement D1 RDS(ON) 26m
D1
Dual P MOSFET Package ID -7.4A
G2
S2
SO-8 G1
S1

Description
D1 D2
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
G1 G2
cost-effectiveness.

S1 S2

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 20 V
3
ID@TA=25 Continuous Drain Current -7.4 A
3
ID@TA=70 Continuous Drain Current -5.9 A
1
IDM Pulsed Drain Current -30 A
PD@TA=25 Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 /W

Data and specifications subject to change without notice 1

200712191
AP4957AGM

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A - - 26 m
VGS=-4.5V, ID=-5A - - 36 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-7A - 7 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=20V - - 100 nA
2
Qg Total Gate Charge ID=-7A - 16 26 nC
Qgs Gate-Source Charge VDS=-24V - 2.8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 9.3 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 9 - ns
tr Rise Time ID=-1A - 6.5 - ns
td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 40 - ns
tf Fall Time RD=15 - 26 - ns
Ciss Input Capacitance VGS=0V - 1215 1950 pF
Coss Output Capacitance VDS=-25V - 190 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 185 - pF
Rg Gate Resistance f=1.0MHz - 5.3 8

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-7A, VGS=0V, - 22 - ns
Qrr Reverse Recovery Charge dI/dt=100A/s - 14 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad.

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

2
 AP4957AGM

40 40

o
o -10V T A = 150 C -10V
T A = 25 C
-7.0V -7.0V
-5.0V -5.0V
-ID , Drain Current (A)

30 30
-4.5V -4.5V

-ID , Drain Current (A)

20 20

V G =-3.0V V G =-3.0V

10 10

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6 7

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

36 1.6

ID=-7A
ID=-5A V G =-10V
T A =25 1.4
32
Normalized RDS(ON)
RDS(ON) (m)

1.2

28

1.0

24

0.8

20 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 1.4

8
Normalized -VGS(th) (V)

1.2

6
-IS(A)

T j =150 o C T j =25 o C 1.0

0.8

0 0.6
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP4957AGM

14 10000
f=1.0MHz

12 ID= -7A
-VGS , Gate to Source Voltage (V)

V DS = - 24 V
10

C (pF)
1000
C iss
6

C oss
2
C rss

0 100
0 5 10 15 20 25 30 35 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10

100us 0.1
0.1

0.05

1ms
-ID (A)

1 0.02

10ms 0.01
PDM
0.01 t
100ms Single Pulse T
0.1

Duty factor = t/T

T A =25 o C 1s Peak Tj = PDM x Rthja + T a

DC Rthja=135 oC/W
Single Pulse
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

30

V DS =-5V T j =25 C
o
T j =150 C
o
VG
-ID , Drain Current (A)

QG
20

-4.5V
QGS QGD

10

Charge Q
0
0 1 2 3 4 5

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

4
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : SO-8

D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5 A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E C 0.19 0.22 0.25
D 4.80 4.90 5.00
1 E1 3.80 3.90 4.00
2 3 4
E 5.80 6.15 6.50
L 0.38 0.71 1.27

e 0 4.00 8.00
e 1.27 TYP
B

A1
DETAIL A L

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.
c

DETAIL A

Part Marking Information & Packing : SO-8

Part Number Package Code

meet Rohs requirement
4957AGM
YWWSSS Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence