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AO4822A

30V Dual N-channel MOSFET

General Description Product Summary

The AO4822A uses advanced trench technology to VDS 30V


provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8A
device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V) <19m
applications.
RDS(ON) (at VGS = 4.5V) < 26m

ESD Protected
100% UIS Tested
100% Rg Tested

D D
SOIC-8
Top View Bottom View
Top View
S2 1 8 D2
G2 2 7 D2
S1 D1 G G
3 6
G1 4 5 D1

S S
Pin1

Absolute Maximum Ratings TA=25C unless otherwise noted


Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain TA=25C 8
ID
Current TA=70C 6.5 A
Pulsed Drain Current C IDM 48
Avalanche Current C IAS, IAR 19 A
Avalanche energy L=0.1mH C EAS, EAR 18 mJ
TA=25C 2
PD W
Power Dissipation B TA=70C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 48 62.5 C/W
RJA
Maximum Junction-to-Ambient A D Steady-State 74 90 C/W
Maximum Junction-to-Lead Steady-State RJL 32 40 C/W

Rev 4 : November 2010 www.aosmd.com Page 1 of 6


AO4822A

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250A, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
TJ=55C 5
IGSS Gate-Body leakage current VDS=0V, VGS= 20V 10 A
VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1.2 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 48 A
VGS=10V, ID=8A 15.5 19
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 21 25
VGS=4.5V, ID=6A 18.5 26 m
gFS Forward Transconductance VDS=5V, ID=8A 30 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 600 740 888 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 77 110 145 pF
Crss Reverse Transfer Capacitance 50 82 115 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 12 15 18 nC
Qg(4.5V) Total Gate Charge 6 7.5 9 nC
VGS=10V, VDS=15V, ID=8A
Qgs Gate Source Charge 2 2.5 3 nC
Qgd Gate Drain Charge 2 3 5 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3 19 ns
tf Turn-Off Fall Time 3.5 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/s 6 8 10 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/s 14 18 22 nC
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25C.
D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 4: November 2010 www.aosmd.com Page 2 of 6


AO4822A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
10V 4V VDS=5V
25 25
3.5V
20 20
ID (A)

ID(A)
15 15

3V
10 10 125C

5 5 25C
VGS=2.5V
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 1.6

Normalized On-Resistance
VGS=10V
25 1.4 ID=8A
)
RDS(ON) (m

VGS=4.5V 17
20 1.2 5
2
15 VGS=4.5V 10
1
ID=6A
VGS=10V

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (C) 0
Voltage (Note E) 18Temperature
Figure 4: On-Resistance vs. Junction
(Note E)

40 1.0E+02
ID=8A
35 1.0E+01
40
30 1.0E+00
)
RDS(ON) (m

125C 1.0E-01 125C


IS (A)

25

1.0E-02
20

1.0E-03 25C
15 25C
1.0E-04
10
2 4 6 8 10 1.0E-05
VGS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
(Note E) Figure 6: Body-Diode Characteristics (Note E)

Rev 4: November 2010 www.aosmd.com Page 3 of 6


AO4822A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=8A
1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
400 Coss

2
200

Crss
0 0
0 5 10 15 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0
100
IAR (A) Peak Avalanche Current

TA=25C
100.0

10s
RDS(ON)
ID (Amps)

TA=100C 10.0
limited
100s
10
1.0 1ms
10ms
0.1
TA=125C TJ(Max)=150C DC 10s
TA=150C
TA=25C
0.0
1 0.01 0.1 1 10 100
0.000001 0.00001 0.0001 0.001 VDS (Volts)
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability (Note Figure 10: Maximum Forward Biased
C) Safe Operating Area (Note F)

10000
TA=25C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

Rev 4: November 2010 www.aosmd.com Page 4 of 6


AO4822A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JA Normalized Transient

RJA=90C/W
Thermal Resistance

0.1

PD
0.01 Single Pulse
Ton
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 4: November 2010 www.aosmd.com Page 5 of 6


AO4822A

Gate Charge Test Circuit & Waveform


Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms


L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 4: November 2010 www.aosmd.com Page 6 of 6