BAT54/A/C/S Schottky Diodes

April 2012

BAT54/A/C/S
Schottky Diodes

Connection Diagram
BAT54 BAT54A

3 3 3

3
L4P
1 2NC 1 2
2 1 2
MARKING BAT54C BAT54S
1 3 3
BAT54 = L4P BAT54A = L42
SOT-23 BAT54C = L43 BAT54S = L44

1 2 1 2

Absolute Maximum Ratings * Ta = 25C unless otherwise noted

Symbol Parameter Value Unit

VRRM Maximum Repetitive Reverse Voltage 30 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current 600 mA
Pulse Width = 1.0 second
TSTG Storage Temperature Range -55 to +150 C
TJ Operating Junction Temperature -55 to +150 C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol Parameter Value Unit
PD Power Dissipation 290 mW
RJA Thermal Resistance, Junction to Ambient 430 C/W

Electrical Characteristics TC = 25C unless otherwise noted

Symbol Parameter Conditions Min. Max. Units

VR Breakdown Voltage IR = 10A 30 V
VF Forward Voltage IF = 0.1mA 240 mV
IF = 1mA 320 mV
IF = 10mA 400 mV
IF = 30mA 500 mV
IF = 100mA 0.8 V
IR Reverse Leakage VR = 25V 2 A
CT Total Capacitance VR = 1V, f = 1.0MHz 10 pF
trr Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA, 5.0 ns
RL = 100

2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

BAT54/A/C/S Rev. E2 1
 BAT54/A/C/S Schottky Diodes
Typical Performance Characteristics

1000
-1 o
10 TA=125 C
100

-2
10 10
IF-Forward Current [A]

Reverse Current, IR [A]

o
1 TA=100 C
o TA=75 C
o
-3
10 -25 C
0.1

o o
-4 25 C TA=25 C
10 0.01
o
75 C 1E-3
-5
10 100 C
o

1E-4 o
TA=-25 C
-6
10 1E-5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30

Reverse Voltage, VR [V]

VF-Forward Voltage [V]

Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage

16

14

12
Capacitance [pF]

10

2
0 1 2 3 4 5 6 7 8 9 10
VR-Reverse Voltage [V]
Figure 3. Total Capacitance vs. Reverse Voltage

2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

BAT54/A/C/S Rev. E2 2
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