Electronic Devices and Circuit Theory: Bipolar Junction Transistors

Electronic Devices and Circuit Theory
Boylestad
Bipolar Junction Transistors

Chapter 3
Ch.3 Summary
Transistor Construction
There are two types of pnp
transistors:
pnp and npn
The terminals are labeled:

E - Emitter npn
B - Base
C - Collector
Electronic Devices and Circuit Theory 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.3 Summary
Transistor Operation
With the external sources, VEE and VCC, connected as
shown:
The emitter-base
junction is forward
biased
The base-collector
junction is reverse
biased
Ch.3 Summary
Currents in a Transistor
Emitter current is the sum of the
collector and base currents:
I I I
E C B
The collector current is comprised of

two currents:
I I I
C C (majority) CO (minority)
Ch.3 Summary
Common-Base Configuration
The base is common to both input (emitterbase) junction

and output (collectorbase) junction of the transistor.
Ch.3 Summary
Common-Base Amplifier
Input Characteristics
This curve shows the

relationship between
of input current (IE) to
input voltage (VBE) for
three output voltage
(VCB) levels.
Ch.3 Summary
Common-Base Amplifier
Output Characteristics
This graph
demonstrates
the output
current (IC) to
an output
voltage (VCB)
for various
levels of input
current (IE).
Ch.3 Summary
Operating Regions
Active
Operating range of the amplifier.
Cutoff
The amplifier is basically off. There is
voltage, but little current.
Saturation
The amplifier is fully on. There is current,
but little voltage.
Ch.3 Summary
Approximations
Emitter and collector currents:
IC IE
Base-emitter voltage:
VBE 0.7 V (for Silicon)
Ch.3 Summary
Alpha ()
Alpha () is the ratio of IC to IE :
IC
dc
IE
Ideally: =1
In reality: falls somewhere between
0.9 and 0.998
Alpha () in the AC mode:

IC
ac
IE
Ch.3 Summary
Transistor Amplifier
V 200 mV
IE I i i 10 mA
Ri 20
Currents and I I Voltage Gain:
C E
Voltages: I I 10 mA
L i VL 50 V
Av 250
V I R (10 mA )( 5 k ) 50 V Vi 200 mV
L L
Ch.3 Summary
Common-Emitter
Configuration
The emitter is common to
both input (base-emitter)
and output (collector-
emitter) circuits.
The input is applied to the

base and the output is
taken from the collector.
Ch.3 Summary
Common-Emitter Characteristics
Collector Characteristics Base Characteristics
Ch.3 Summary
Common-Emitter Amplifier Currents

Ideal Currents IE = IC + IB IC = IE
Actual Currents IC = IE + ICBO where ICBO = minority

collector current
ICBO is usually so small that it can be ignored, except in high

power transistors and in high temperature environments.
When IB = 0 A the transistor is in ICBO

cutoff, but there is some minority ICEO IB 0 A
current flowing called ICEO. 1
Ch.3 Summary
Beta ()
represents the amplification factor of a transistor.
IC
In DC mode: dc
IB
IC
In AC mode: ac VCE constant
IB
ac is sometimes referred to as hfe, a term used in transistor

modeling calculations
Ch.3 Summary
Beta ()
Determining from a Graph
( 3.2 mA 2.2 mA)

AC
( 30 A 20 A)
1 mA
V 7.5 V
10 A CE
100
2.7 mA
DC VCE 7.5 V
25 A
108
Ch.3 Summary
Beta ()
Relationship between amplification factors and :

1 1
Relationship Between Currents:
IC IB IE ( 1)IB
Ch.3 Summary
Common-Collector Configuration
The input is on the

base and the
output is on the
emitter.
Ch.3 Summary
Common-Collector Configuration
The characteristics
are similar to those
of the common-
emitter amplifier,
except the vertical
axis is IE.
Ch.3 Summary
Operating Limits
VCE is maximum and IC is
minimum in the cutoff
region.
IC (max) ICEO
IC is maximum and VCE is

minimum in the saturation
region.
VCE (max) VCE ( sat ) VCEO
The transistor operates in the active region between saturation and cutoff.
Ch.3 Summary
Power Dissipation
Common-base:
PCmax VCBIC
Common-emitter:
PCmax VCE IC
Common-collector:
PCmax VCE IE
Ch.3 Summary
Transistor Specification Sheet
Ch.3 Summary
Ch.3 Summary
Ch.3 Summary
Transistor Testing
Curve Tracer Provides a graph of the characteristic curves.
DMM Some DMMs measure DC or hFE.
Ohmmeter:
Ch.3 Summary
Transistor Terminal Identification

Electronic Devices and Circuit Theory: Bipolar Junction Transistors

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Electronic Devices and Circuit Theory

Bipolar Junction Transistors

pnp and npn

The terminals are labeled:

The collector current is comprised of

The base is common to both input (emitterbase) junction

This curve shows the

Emitter and collector currents:

VBE 0.7 V (for Silicon)

Alpha () in the AC mode:

The input is applied to the

Collector Characteristics Base Characteristics

Common-Emitter Amplifier Currents

Actual Currents IC = IE + ICBO where ICBO = minority

ICBO is usually so small that it can be ignored, except in high

When IB = 0 A the transistor is in ICBO

ac is sometimes referred to as hfe, a term used in transistor

( 3.2 mA 2.2 mA)

Relationship Between Currents:

The input is on the

IC is maximum and VCE is

Transistor Specification Sheet

Transistor Specification Sheet

Transistor Specification Sheet

Curve Tracer Provides a graph of the characteristic curves.

DMM Some DMMs measure DC or hFE.

Transistor Terminal Identification

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