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Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications. TO-220AB
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.45
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
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10/11/01
520
(Body Diode) Q p-n junction diode. S
Notes:
Q Repetitive rating; pulse width limited by U Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
R Starting TJ = 25C, L = 0.13mH
VCalculated continuous current based on maximum allowable
RG = 25, IAS = 78A. (See Figure 12).
junction temperature. Package limitation current is 75A.
S ISD 78A, di/dt 320A/s, VDD V(BR)DSS,
TJ 175C WLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
T Pulse width 400s; duty cycle 2%. avalanche performance.
2 www.irf.com
IRF1407
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID , Drain-to-Source Current (A)
10 10
1000.00 3.0
I D = 130A
T J = 25C
ID , Drain-to-Source Current ( )
2.5
TJ = 175C
R DS(on) , Drain-to-Source On Resistance
2.0
(Normalized)
100.00 1.5
1.0
0.5
VDS = 15V
10.00
20s PULSE WIDTH
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
3.0 5.0 7.0 9.0 11.0 13.0
TJ , Junction Temperature ( C)
VGS, Gate-to-Source Voltage (V)
100000
15
VGS = 0V, f = 1 MHZ
ID = 78A
V DS = 60V
Ciss = Cgs + Cgd , Cds SHORTED V DS = 37V
Crss = Cgd V DS = 15V
12
Coss = Cds + Cgd
C, Capacitance(pF)
10000
6
Coss
1000
3
Crss
100 0
0 40 80 120 160 200
1 10 100
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1000.00 10000
10.00 100
T J = 25C 100sec
1.00 10 1msec
Tc = 25C
VGS = 0V Tj = 175C
10msec
Single Pulse
0.10 1
0.0 1.0 2.0 3.0 1 10 100 1000
VSD , Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)
140
RD
LIMITED BY PACKAGE VDS
120
VGS
D.U.T.
100
RG
+
-VDD
I D , Drain Current (A)
80
10V
Pulse Width 1 s
60 Duty Factor 0.1 %
20 VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( C)
10%
VGS
Fig 9. Maximum Drain Current vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
D = 0.50
(Z thJC)
0.1 0.20
0.10
0.05
Thermal Response
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
t1
t2
0.001
Notes:
1. Duty factor D =
2. Peak T
t1 / t
J = P DM x Z thJC
2
+T C
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IRF1407
650
1 5V
ID
TOP 32A
55A
L D R IV E R 520 BOTTOM 78A
VDS
0
25 50 75 100 125 150 175
Starting T , Junction
J Temperature ( C)
IAS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
QG
10 V
QGS QGD 3.5
VGS(th) Gate threshold Voltage (V)
VG
3.0
ID = 250A
Charge
Fig 13a. Basic Gate Charge Waveform 2.5
Current Regulator
Same Type as D.U.T.
50K
2.0
12V .2F
.3F
+
V
D.U.T. - DS
1.5
VGS -75 -50 -25 0 25 50 75 100 125 150 175 200
3mA T J , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature
6 www.irf.com
IRF1407
1000
0.05
10
0.10
1
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
+
R
T
- +
-
Q
RG dv/dt controlled by RG +
ISD controlled by Duty Factor "D" VDD
-
D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% [ ISD ]
6.47 (.2 55 )
6.10 (.2 40 )
4
1 5.24 ( .600 )
1 4.84 ( .584 )
1.1 5 (.04 5) L E A D A S S IG N M E N T S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - SOU RCE
4 - D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30) 4.0 6 (.160)
3.5 5 (.140)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/01
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