Course code: SEMICONDUCTOR DEVICES AND CIRCUITS L T P C

EEE102 3 0 2 4
Version No. 1.0
Course EEE105/101
Prerequisites
Objectives: To give the students a solid background of solid state devices.
To apply the knowledge of solid state devices principles to analyze electronic circuits.
To design amplifiers under different configurations and study their responses
To study the devices under low frequency and high frequency conditions.
To simulate the above using soft tools and compare them with hard-wired circuitry.

Expected Demystification of Electronics.

Outcome: Ability to use it as a back ground knowledge to solve real life problems in electronics.
Gain full confidence to work with devices in various types of Circuits.

Unit I Diode Circuits

Diodes, Rectifier Circuits, Zener Diode Circuits, Clipper and Clamper Circuits, Multiple-
Diode Circuits, Photodiode and LED Circuits.
Unit II The Bipolar Junction Transistor

Basic Bipolar Junction Transistor, DC Analysis of Transistor Circuits, Basic Transistor

Applications, Bipolar Transistor Biasing, Multistage Circuits.

Unit III Basic BJT Amplifiers

Analog Signals and Linear Amplifiers, The Bipolar Linear Amplifier, Basic Transistor
Amplifier Configurations, CE Amplifiers, AC Load Line Analysis, CC (Emitter Follower)
Amplifier, CB Amplifier, Summary and Comparison of the Three Basic Amplifiers,
Multistage Amplifiers, Power Considerations.

Unit IV The Field Effect Transistor

MOS Field-Effect Transistor, MOSFET DC Circuit Analysis, Basic MOSFET

Applications, Amplifier, Junction Field Effect Transistor, HBT, HEMT, NMOS, PMOS,
CMOS, BiCMOS, GaAsFET.

Unit V Basic FET Amplifiers

MOSFET Amplifier, Basic Transistor Amplifier Configuration, The Common Source

Amplifier, The Source Follower Amplifier, The Common Gate Configuration, The three
Basic Amplifier Configurations: Summary and Comparison, Single-Stage Integrated
Circuit MOSFET Amplifiers, Multistage Amplifiers, Equivalent Circuit and Analysis.

Text Books 1. R. L. Boylestad & L. Nashelsky Electronic Devices and Circuit Theory 9/e, Pearson
Education, Delhi, 2007.
2. D. A. Neamen, Electronic Circuit Analysis and Design 2/e, Tata McGraw-Hill, New Delhi,
2002.
Reference 1. D. A. Bell, Electronic Devices and Circuits, Prentice Hall of India, New Delhi, 2003.
Books 2. T. F. Boghert, Electronic Devices and Circuits, Pearson Education, 6/e, Delhi, 2003. 3.B
G. Streetman and S. Banerjee, Solid State Electronic Devices, Pearson Education, Delhi,
2002.

Mode of CAT- I & II , Quizzes, Assignments/ other tests, Term End Examination
Evaluation
Recommende
d by the
Board of
Studies on
Date of
Approval by
the Academic
Council

Experiments:
1. PN & Zener Diode Characteristics
2. Design of diode circuits (clipper, clamper, rectifiers, filters, regulators) and obtain their
device characteristics and Concept of Load lines
3. Design of transistor biasing circuits for common emitter, common collector, common base.
4. Design of Biasing networks for JFET and MOSFET.
5. Design of amplifier circuits using BJT and
i. Find Q point and study its effects on amplification.
ii. Study the effect of RE, CE on gain and response of an amplifier.
iii. Study of effect of swamp resistance on gain.