PolarHVTM HiPerFET IXFH 26N50P VDSS = 500 V

Power MOSFET IXFV 26N50P ID25 = 26 A

IXFV 26N50PS RDS(on) ≤ 230 m Ω
N-Channel Enhancement Mode trr ≤ 200 ns
Avalanche Rated
Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

VDSS TJ = 25° C to 150° C 500 V
VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V TO-247 (IXFH)

VGSS Continuos ± 30 V
VGSM Transient ± 40 V

ID25 TC = 25° C 26 A
IDM TC = 25° C, pulse width limited by TJM 78 A
D (TAB)
IAR TC = 25° C 26 A
EAR TC = 25° C 40 mJ
EAS TC = 25° C 1.0 J PLUS220 (IXFV)

dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns

TJ ≤150° C, RG = 4 Ω
PD TC = 25° C 400 W G
D D (TAB)
TJ -55 ... +150 °C S
TJM 150 °C
Tstg -55 ... +150 °C PLUS220SMD (IXFV_S)
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C

Md Mounting torque (TO-247) 1.13/10 Nm/lb.in.

FC Mounting force (PLUS220) 11..65/2.5..15 N/lb G

S D (TAB)
Weight TO-247 6 g
PLUS220 & PLUS220SMD 5 g G = Gate D = Drain
S = Source TAB = Drain

Features
Symbol Test Conditions Characteristic Values l
International standard packages
(TJ = 25° C, unless otherwise specified) Min. Typ. Max. l
Fast intrinsic diode
l
BVDSS VGS = 0 V, ID = 250 µA 500 V Unclamped Inductive Switching (UIS)
rated
VGS(th) VDS = VGS, ID = 4 mA 3.0 5.5 V l
Low package inductance
- easy to drive and to protect
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
Advantages
IDSS VDS = VDSS 25 µA l
Easy to mount
VGS = 0 V TJ = 125° C 250 µA l
Space savings
l
RDS(on) VGS = 10 V, ID = 0.5 ID25 230 mΩ High power density
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

© 2006 IXYS All rights reserved DS99276E(12/05)

 IXFH 26N50P IXFV 26N50P
IXFV 26N50PS
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) TO-247 AD (IXFH) Outline
Min. Typ. Max.

gfs VDS = 20 V; ID = 0.5 ID25, pulse test 16 26 S

Ciss 3600 pF
Terminals:
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 370 pF 1 2 3

1 - Gate
Crss 40 pF 2 - Drain
3 - Source
Tab - Drain
td(on) 20 ns
tr VGS = 10 V, VDS = 0.5 ID25 25 ns
td(off) RG = 4 Ω (External) 58 ns
Dim. Millimeter Inches
tf 20 ns Min. Max. Min. Max.

A 4.7 5.3 .185 .209

Qg(on) 60 nC A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 nC
b 1.0 1.4 .040 .055
Qgd 25 nC b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123

RthJC 0.31 ° C/W C .4 .8 .016 .031

D 20.80 21.46 .819 .845
RthCS (TO-247, PLUS220) 0.21 ° C/W E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800
L1 4.50 .177
Source-Drain Diode Characteristic Values
∅P 3.55 3.65 .140 .144
(TJ = 25° C, unless otherwise specified) Q 5.89 6.40 0.232 0.252
Symbol Test Conditions Min. Typ. Max. R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IS VGS = 0 V 26 A

ISM Repetitive 104 A

PLUS220 (IXFV) Outline
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = 25A, -di/dt = 100 A/µs 200 ns

QRM VR = 100V, VGS = 0 V 0.6 µC
IRM 6 Α

PLUS220SMD (IXFV_S) Outline

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
 IXFH 26N50P IXFV 26N50P
IXFV 26N50PS
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
26 60
24 V GS = 10V V GS = 10V
55
8V 8V
22 7V 50
20
45
18 7V
40
I D - Amperes

I D - Amperes
16
35
14
30
12
6V 25
10
20
8 6V
6 15

4 10

2 5V 5
5V
0 0
0 1 2 3 4 5 6 7 0 3 6 9 12 15 18 21 24 27 30
V DS - Volts V DS - Volts

Fig. 3. Output Characteristics Fig. 4. R DS(on) Normalized to ID = 13A Value

@ 125ºC v s. Junction Temperature
26 3.1
24 V GS = 10V
V GS = 10V
7V 2.8
22
20 2.5
R DS(on) - Normalized

18 6V 2.2
I D - Amperes

16
1.9 I D = 26A
14
12 1.6 I D = 13A
10
1.3
8
6 5V 1
4
0.7
2
0 0.4
0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150
V DS - Volts T J - Degrees Centigrade

Fig. 5. R DS(on) Normalized to ID = 13A Value Fig. 6. Maximum Drain Current v s.

v s. Drain Current Case Temperature
3.2 30

3 V GS = 10V
2.8 TJ = 125ºC 25
2.6
R DS(on) - Normalized

2.4 20
I D - Amperes

2.2

2 15
1.8
1.6 10
1.4
TJ = 25ºC
1.2 5
1

0.8 0
0 5 10 15 20 25 30 35 40 45 50 55 60 -50 -25 0 25 50 75 100 125 150
I D - Amperes T J - Degrees Centigrade

© 2006 IXYS All rights reserved

 IXFH 26N50P IXFV 26N50P
IXFV 26N50PS

Fig. 7. Input Admittance Fig. 8. Transconductance

50 50

45 45

40 40

35 35 TJ = - 40ºC
25ºC

g f s - Siemens
I D - Amperes

30 30 125ºC
TJ = 125ºC
25 25ºC 25
- 40ºC
20 20

15 15

10 10

5 5

0 0
3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 20 25 30 35 40 45 50 55 60
V GS - Volts I D - Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode Fig. 10. Gate Charge
80 10
V DS = 250V
9
70
I D = 13A
8
I G = 10mA
60
7
I S - Amperes

50
V GS - Volts

40 5

4
30 TJ = 125ºC
3
20
2
10 TJ = 25ºC
1

0 0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 15 20 25 30 35 40 45 50 55 60 65
V SD - Volts Q G - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

10,000 100
f = 1 MHz
RDS(on) Limit

C iss
Capacitance - PicoFarads

25µs
1,000
I D - Amperes

100µs

10
C oss 1ms

100 10ms

DC
TJ = 150ºC
C rss TC = 25ºC

10 1
0 5 10 15 20 25 30 35 40 10 100 1000
V DS - Volts V DS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.
 IXFH 26N50P IXFV 26N50P
IXFV 26N50PS

Fig. 13. Maximum Transient Thermal Resistance

1.000
R (th)JC - ºC / W

0.100

0.010
0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds

© 2006 IXYS All rights reserved

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

IXYS:
IXFH26N50P