SPW47N60C3

Cool MOS™ Power Transistor VDS @ Tjmax 650 V

Feature RDS(on) 0.07 Ω
• New revolutionary high voltage technology ID 47 A
• Worldwide best R DS(on) in TO 247
• Ultra low gate charge P-TO247

• Periodic avalanche rated

• Extreme dv/dt rated
• Ultra low effective capacitances

Type Package Ordering Code Marking

SPW47N60C3 P-TO247 Q67040-S4491 47N60C3

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 47
TC = 100 °C 30
Pulsed drain current, tp limited by Tjmax I D puls 141
Avalanche energy, single pulse EAS 1800 mJ
I D = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1
I D = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 20 A
Gate source voltage static VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 415 W
Operating and storage temperature T j , T stg -55... +150 °C

Page 1 2003-11-06
 SPW47N60C3

Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 480 V, I D = 47 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.3 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
Soldering temperature, Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS V GS=0V, ID=20A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=2700µΑ, VGS=V DS 2.1 3 3.9
Zero gate voltage drain current I DSS V DS=600V, VGS=0V, µA
Tj=25°C, - 0.5 25
Tj=150°C - - 250
Gate-source leakage current I GSS V GS=30V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, ID=30A, Ω
Tj=25°C - 0.06 0.07
Tj=150°C - 0.16 -
Gate input resistance RG f=1MHz, open Drain - 0.62 -

Page 2 2003-11-06
 SPW47N60C3

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g fs V DS≥2*I D*RDS(on)max, - 40 - S
ID=30A

Input capacitance Ciss V GS=0V, V DS=25V, - 6800 - pF

Output capacitance Coss f=1MHz - 2200 -
Reverse transfer capacitance Crss - 145 -
Effective output capacitance, 2) Co(er) V GS=0V, - 193 - pF
energy related V DS=0V to 480V

Effective output capacitance, 3) Co(tr) - 412 -

time related
Turn-on delay time td(on) V DD=380V, V GS=0/13V, - 18 - ns
Rise time tr ID=47A, RG =1.8Ω, - 27 -
Turn-off delay time td(off) Tj=125 - 111 165
Fall time tf - 8 12

Gate Charge Characteristics

Gate to source charge Qgs V DD=350V, ID=47A - 24 - nC
Gate to drain charge Qgd - 121 -
Gate charge total Qg V DD=350V, ID=47A, - 252 320
V GS=0 to 10V

Gate plateau voltage V(plateau) V DD=350V, ID=47A - 5.5 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
3C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.

Page 3 2003-11-06
 SPW47N60C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 47 A
forward current
Inverse diode direct current, I SM - - 141
pulsed
Inverse diode forward voltage VSD VGS =0V, I F=IS - 1 1.2 V
Reverse recovery time t rr VR =350V, IF=IS , - 580 - ns
Reverse recovery charge Q rr diF/dt=100A/µs - 23 - µC
Peak reverse recovery current I rrm - 73 - A
Peak rate of fall of reverse di rr/dt - 900 - A/µs
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
Rth1 0.002689 K/W Cth1 0.001081 Ws/K
Rth2 0.005407 Cth2 0.004021
Rth3 0.011 Cth3 0.005415
Rth4 0.054 Cth4 0.014
Rth5 0.071 Cth5 0.025
Rth6 0.036 Cth6 0.158

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

Page 4 2003-11-06
 SPW47N60C3

1 Power dissipation 2 Safe operating area

Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25°C
500
SPW47N60C3 10 3
A
W

400 10 2

350
Ptot

ID
300 10 1

250

200 10 0
tp = 0.001 ms
150 tp = 0.01 ms
tp = 0.1 ms
100 10 -1 tp = 1 ms
DC
50

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic

ZthJC = f (t p) ID = f (VDS); Tj=25°C
parameter: D = tp/T parameter: tp = 10 µs, VGS
1
10 280
K/W 20V
A
10 0 7.5V

200
ZthJC

7V
ID

10 -1
160
6.5V

D = 0.5 120
10 -2
D = 0.2 6V
D = 0.1
D = 0.05 80 5.5V
-3
D = 0.02
10 D = 0.01
single pulse 40 5V

4.5V
10 -4 -7 -6 -5 -4 -3 -2 0 0
10 10 10 10 10 10 s 10 0 4 8 12 16 20 V 26
tp VDS

Page 5 2003-11-06
 SPW47N60C3

5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS); Tj=150°C RDS(on)=f(ID)
parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS
160 0.5
20V
A Ω 4V 4.5V 5V
6.5V

120 0.4

RDS(on)
6V 5.5V
ID

100 0.35

5.5V
80 0.3

6V
60 0.25
5V

6.5V
40 0.2
4.5V
20V
20 0.15
4V

0 0.1
0 4 8 12 16 20 V 26 0 20 40 60 80 100 120 A 160
VDS ID

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 47 A, VGS = 10 V parameter: tp = 10 µs
SPW47N60C3
0.38 280
Ω
A 25°C
0.32

0.28
RDS(on)

200

0.24
ID

160
0.2

0.16 120
150°C
0.12
80
98%
0.08
typ
40
0.04

0 0
-60 -20 20 60 100 °C 180 0 1 2 3 4 5 6 7 8 V 10
Tj VGS

Page 6 2003-11-06
 SPW47N60C3

9 Typ. gate charge 10 Forward characteristics of body diode

VGS = f (QGate ) IF = f (VSD)
parameter: ID = 47 A pulsed parameter: Tj , tp = 10 µs
16
SPW47N60C3
10 3 SPW47N60C3

V
A

12

0.2 VDS max 10 2

VGS

10

IF
0.8 VDS max

6
10 1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2 Tj = 150 °C (98%)

0 10 0
0 40 80 120 160 200 240 280 320 nC 400 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

11 Typ. drain current slope 12 Typ. switching time

di/dt = f(R G), inductive load, Tj = 125°C t = f (RG ), inductive load, T j=125°C
par.: VDS =380V, VGS=0/+13V, ID=47A par.: V DS=380V, VGS=0/+13V, ID=47 A
6000 10 3
td(off)

ns
A/µs

4000 10 2
di/dt

tf
t

td(on)
di/dt(on)
3000
tr

2000 10 1

1000 di/dt(off)

0 10 0
0 2 4 6 8 10 12 14 16 Ω 20 0 2 4 6 8 10 12 14 16 Ω 20
RG RG

Page 7 2003-11-06
 SPW47N60C3

13 Typ. switching time 14 Typ. drain source voltage slope

t = f (ID), inductive load, T j=125°C dv/dt = f(RG), inductive load, Tj = 125°C
par.: VDS =380V, VGS=0/+13V, RG =1.8Ω par.: V DS=380V, VGS=0/+13V, ID=47A
3
10 80
ns
td(off) V/ns

dv/dt(off)
10 2 60

dv/dt
td(on) 50
t

10 1 tf 40

tr 30

10 0 20
dv/dt(on)

10

10 -1 0
0 10 20 30 A 50 0 2 4 6 8 10 12 14 16 Ω 20
ID RG

15 Typ. switching losses 16 Typ. switching losses

E = f (ID), inductive load, Tj=125°C E = f(RG), inductive load, Tj=125°C
par.: VDS =380V, VGS=0/+13V, RG =1.8Ω par.: V DS=380V, VGS=0/+13V, ID=47A
0.4 1.4
*) Eon includes SDP06S60 diode *) Eon includes SDP06S60 diode
commutation losses. commutation losses.
mWs

mWs
1
E

Eoff 0.8 Eoff

0.2

0.6
Eon*
Eon*
0.4
0.1

0.2

0 0
0 10 20 30 A 50 0 2 4 6 8 10 12 14 16 Ω 20
ID RG

Page 8 2003-11-06
 SPW47N60C3

17 Avalanche SOA 18 Avalanche energy

IAR = f (tAR) EAS = f (Tj)
par.: Tj ≤ 150 °C par.: ID = 10 A, VDD = 50 V
20 1800
A mJ

16
1400

14

EAS
1200
IAR

12
1000
10
800
8
600
6

400
4

2 200

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 25 50 75 100 °C 150
tAR Tj

19 Drain-source breakdown voltage 20 Avalanche power losses

V(BR)DSS = f (Tj) PAR = f (f )
parameter: E AR=1mJ
SPW47N60C3
720 500

-
680
V(BR)DSS

PAV

660
300
640

620
200

600

580
100

560

540 0 4 5 6
-60 -20 20 60 100 °C 180 10 10 Hz 10
Tj f

Page 9 2003-11-06
 SPW47N60C3

21 Typ. capacitances 22 Typ. Coss stored energy

C = f (VDS) Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 5 30
pF
µJ
Ciss

10 4

Eoss
20
C

10 3 15
Coss

10

10 2
Crss
5

10 1 0
0 100 200 300 400 V 600 0 100 200 300 400 V 600
VDS VDS

23 Typ. gate threshold voltage

VGS(th) = f (Tj)
parameter: V GS = VDS ; ID = 2.7 mA
4.25

max.
VGS(th)

3.25

typ.

2.75

min.
2.25

1.75

1.25
-75 -50 -25 0 25 50 75 100 125 °C 175
Tj

Page 10 2003-11-06
 SPW47N60C3

Definition of diodes switching characteristics

Page 11 2003-11-06
 SPW47N60C3

P-TO-247-3-1
15.9
6.35 5.03
ø3.61 2.03

4.37

20˚
5.94
6.17
9.91
20.9

D 7 5˚

2.97 x 0.127

41.22
1.75

D
16

1.14
0.243
1.2 0.762 MAX.
2 2.4 +0.05
2.92
5.46

General tolerance unless otherwise specified: Leadframe parts: ±0.05

Package parts: ±0.12

Page 12 2003-11-06
 SPW47N60C3

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 13 2003-11-06