REFERENCES
1. P.J. Matthews and P.D. Biernacki, Photonic signal processing for
Figure 10 (a) Frequency responses of the 64-cavity filter; (b) corre-
sponding profile of signal power coupled into the cavity ports vs. output
port number, (upper and lower cavity gains ⫽ 1.85 and 1.45, respectively).
[Color figure can be viewed in the online issue, which is available at
www.interscience.wiley.com.]
processors, and the signal and pump powers coupled into the
various Bragg cavities can be arbitrarily adjusted to generate
multiple RF responses, whose sum results in an arbitrary RF
response.
Figure 8(a) shows the frequency response of the 64-cavity filter
for the signal-power profile shown in Figure 8(b). Also shown in
Figure 8(a) is the response of a single-cavity filter. All parameters
␤ n were assumed to be 0.01. For each cavity pair, the EDFA gains
are 1.9 and 1.3 for the high-gain and low-gain cavities, respec-
tively. The 3-dB to 30-dB shape factors of the 64-cavity and the
single-cavity filters are 2.6 and 30, respectively. This shows that
the multicavity filter results in a more than 10-fold enhancement in
shape factor, which is the highest such result reported to date.
The MicroPhotonic RF signal processor is also capable of
generating notch characteristics, which are crucial for mitigating
RF interference. Figure 9(a) shows a notch-filter response of
unity-normalized centre frequency. The high and low gains of all
Bragg cavity pairs were 1.85 and 1.45, respectively, with a cavity
length offset of 2%. The optimum signal-power profile, which is
shown in Figure 9(b), results in a more than 30-dB notch depth and
less than 1-dB ripples over the 65% frequency band.
Finally, Figure 10(a) shows a notch-filter response with the
normalized centre frequency tuned to 1.225. The high and low
gains of the all cavity pairs were 1.85 and 1.45, respectively, and
a cavity length offset of 2%. The optimum signal-power profile,
which is shown in Figure 10(b), results in a more than 30-dB notch
depth and less than 1-dB ripples over the 65% frequency band.
5. CONCLUSION
A novel MicroPhotonic reconfigurable photonic RF processor has
been presented. The processor utilizes opto-VLSI processors to
generate reconfigurable diffraction gratings which, in conjunction
with optimized micro-optics, control the optical-signal and pump-
power distributions in EDFA fibre Bragg grating cavities. The
opto-VLSI technology provides a cost-efficient and reliable means
for implementing the MicroPhotonic RF-signal processor. The
results have shown that for a 64-cavity structure, a wide passband-
filter response with a shape factor as low as 2.6 is feasible, which
is the highest reported to date. Tunable notch characteristics have
also been obtained with less than 1-dB passband ripples over a
more than 65% operating frequency band. Also, the results have
shown that the new MicroPhotonic processor can be reconfigured
to tune the centre frequency while maintaining a low shape factor.
In addition, the processor can be reconfigured to generate arbitrary
characteristics.
ACKNOWLEDGMENT
The support of the Western Australian Government is gratefully
acknowledged.
58 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 42, No. 1, July 5 2004
microwave applications, IEEE MTT-S Int Microwave Symp Dig,
Anaheim, CA, 1999, pp. 877– 880.
2. B. Moslehi, Fibre-optic filters employing optical amplifiers to provide
design flexibility, Electron Lett 28 (1992), 226 –228.
3. M.C. Vazquez, B. Vizoso, M. Lopez-Amo, and M.A. Muriel, Single
and double amplified recirculating delay lines as fibre-optical filters,
Electron Lett 28 (1992), 1017–1019.
4. M.Y. Frankel and R.D. Esman, Fibre-optic tunable microwave trans-
versal filter, IEEE Photon Technol Lett 7 (1995), 191–193.
5. D.B. Hunter and R.A. Minasian, Photonic signal processing of micro-
wave signals using an active-fibre Bragg-grating-pair structure, IEEE
Trans Microwave Theory Tech 45 (1997), 1463–1466.
6. N. You and R.A. Minasian, A novel high-Q optical microwave pro-
cessor using hybrid delay-line filters, IEEE Trans Microwave Theory
Tech 47 (1999), 1304 –1308.
7. K.E. Alameh, E.H.W. Chan, and R.A. Minasian, High-skirt-selectivity
photonics-based bandpass filters, Int Top Mtg Microwave Photon
MWP’01, 2002, pp. 191–194.
8. D.B. Hunter, and R.A. Minasian, Tunable microwave fibre-optic band-
pass filters, IEEE Photon Technol Lett 11 (1999), 1166 –1168.
9. J. Marti, V. Polo, F. Ramos, and D. Moodie, Photonic tunable micro-
wave filters employing electroabsorption modulators and wideband
chirped fibre gratings, Electron Lett 35 (1999), 305–306.
10. R.A. Minasian and K.E. Alameh, Photonic signal processing, Proc 27th
Triennial Gen Assemb Int Union Radio Sci, Maastricht, The Nether-
lands, 2002, p. 192.
11. S. Ahderom, M. Raisi, K. Lo, K.E. Alameh, and R. Mavaddat, Appli-
cations of liquid crystal spatial light modulators in optical communi-
cations, Proc IEEE 5th Int Conf High-speed Networks Multimedia
Commun HSNMC’02, Korea, 2002, pp. 239 –242.
12. I. Manolis, T. Wilkinson, M. Redmaond, and W.A. Crossland, Recon-
figurable multilevel phase holograms for optical switches, IEEE Pho-
ton Technol Lett 4 (2002), 801– 803.
© 2004 Wiley Periodicals, Inc.
A MONOLITHIC 1.57/5.25-GHz
CONCURRENT DUAL-BAND LOW-
NOISE AMPLIFIER USING InGaP/GaAs
HBT TECHNOLOGY
Shey-Shi Lu,1 Yo-Sheng Lin,2 and Bo-Wei Lee1
1
Dept. of Electrical Engineering and Institute of Electronics
Engineering
National Taiwan University
Taipei, Taiwan, R.O.C.
2
Dept. of Electrical Engineering
National Chi-Nan University
Puli, Taiwan, R.O.C.
Received 9 December 2003
ABSTRACT: A monolithic concurrent dual-band low-noise amplifier
(LNA) using InGaP/GaAs HBT technology is demonstrated for the first
time. The LNA provides narrowband gain and matching simultaneously
at both 1.57-GHz (GPS) and 5.25-GHz (ISM) bands. It consumes only
15-mW power and achieves transducer gains (S21) of 25.3 and 14.3 dB,
input return losses (S11) of 6.8 and 11.5 dB, reverse isolation (S12) of
⫺30.8 and ⫺32.2 dB, and noise figures of 2.55 and 4.5 dB at these two
bands, respectively. The performance at 5.25 GHz is comparable with
the 2.45/5.25-GHz concurrent dual-band CMOS LNA with a bonding
wire as the gate inductor using 0.35-␮m CMOS technology [1]. © 2004
Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 58 – 60, 2004;
Published online in Wiley InterScience (www.interscience.wiley.com).
DOI 10.1002/mop.20206
 realized through a concurrent dual-band LNA, in conjunction with
an elaborate frequency-conversion scheme.
Although a concurrent dual-band CMOS LNA has been dem-
onstrated with very good performance [1], no concurrent dual-
band LNA implemented in GaInP/GaAs HBT technology has ever
been presented. In this paper, we report a low-power monolithic
concurrent 1.57/5.25-GHz dual-band LNA using InGaP/GaAs
HBT technology for the first time.

2. PRINCIPLES OF CIRCUIT DESIGN

The complete schematic of our monolithic 1.57/5.25-GHz dual-
band LNA is shown in Figure 1(a). A single-stage topology was
chosen to minimize the power dissipation and to improve the input
1-dB compression point (P1dB) and the input third-order intercept
point (IIP3) [4]. A cascode configuration is used to improve
stability and to reduce the Miller effect. The circuit between the
two transistors Q 1 and Q 2 is a 4.6-GHz image-reject filter, which
can suppress the undesired image of the higher-frequency band
(5.25 GHz). The size and bias of the input transistor Q 1 were
chosen appropriately both to minimize power consumption and to
obtain low noise figure by keeping the device current density close
to the minimum noise-figure region [5]. In addition, an appropriate
choice of the emitter inductance and base inductance made the

Figure 1 (a) Complete circuit and (b) die photograph of the monolithic
1.57/5.25-GHz dual-band LNA

Key words: InGaP; concurrent; dual-band; HBT; amplifiers; LNA

1. INTRODUCTION
Recently, thanks to the continuous decline of cost and power
dissipation of GPS receivers, the use of GPS (1.5-GHz range) to
determine one’s position and direction, for example, in automo-
biles, has become more and more prevalent. In addition, exploiting
the 300-MHz bandwidth in the 5– 6-GHz frequency band (5.15–
5.35/5.725–5.825 GHz) released by the FCC in the United States
for ISM use has become increasingly popular [2]. As a result, a
demand for GPS/ISM dual-band receivers is growing rapidly.
In terms of traditional receiver architecture, simultaneous op-
eration at two different frequency bands can only be achieved by
building two independent signal paths with an inevitable increase
in cost, chip size, and power dissipation [3]. Not long ago, a new
concurrent dual-band receiver architecture capable of simulta-
neous operation at two different frequency bands without dissipat- Figure 2 Measured (a) transducer gains (S 21 ) and input return losses
ing twice as much power and producing a significant increase in (S 11 ) and (b) reverse isolation (S 12 ) of the monolithic 1.57/5.25-GHz
cost and chip size was introduced [1]. Concurrent operation is dual-band LNA

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 42, No. 1, July 5 2004 59

Figure 3 Measured noise figures of the monolithic 1.57/5.25-GHz dual-
band LNA
input impedance close to 50⍀ at both frequencies (1.57 and 5.25
GHz). The LC resonant-load at the output terminal was added to
boost the gain. In addition, the capacitance divider was added in
order to achieve output matching. Therefore, the frequency re-
sponse could be shaped to achieve the required gain and matching
at the dual bands of interest.
3. MEASURED RESULTS AND DISCUSSION
An InGaP/GaAs HBT IC process with f T ⫽ 40 GHz was used to
fabricate the LNA. The die photograph of the finished monolithic
1.57/5.25-GHz dual-band LNA is shown in Figure 1(b). This
circuit occupies an area of 700 ⫻ 700 ␮m, excluding the test pads.
This LNA drains 3-mA current at supply voltage 5 V, that is, it
only consumes 15-mW power.
The noise and scattering parameters were measured on wafer
using an automated NP5 measurement system from ATN Micro-
wave Inc. This LNA achieved transducer gains (S 21 ) of 25.3 dB
and 14.3 dB, and input return losses (S 11 ) of 6.8 dB and 11.5 dB
at the 1.57- and 5.25-GHz frequency bands, respectively, as shown
in Figure 2(a). As can be seen in Figure 2(b), the measured reverse
isolation (S 12 ) for the LNA was quite good, that is, ⫺30.8 dB and
⫺32.2 dB, at the 1.57- and 5.25-GHz frequency bands, respec-
tively, and with more than 30 dB of isolation for frequencies lower
than 8 GHz. This is due to the use of the cascode configuration.
The measured noise figure (NF) was 2.55 and 4.5 dB at the 1.57-
and 5.25-GHz frequency bands, respectively, as shown in Figure 3.
The performances of our 1.57/5.25-GHz concurrent dual-band
InGaP/GaAs LNA (NF of 4.5 dB, and S 21 of 14.3 dB) at 5.25 GHz
are comparable with those of the 2.45/5.25-GHz concurrent dual-
band CMOS LNA (NF of 4.5 dB, and S 21 of 15.5 dB) with a
bonding wire as the gate inductor using 0.35-␮m CMOS technol-
ogy [1]. This means the performance of our InGaP/GaAs dual-
band LNA can be better than that of its CMOS version without the
use of bonding wire.
4. CONCLUSION
The first monolithic concurrent 1.57/5.25-GHz dual-band LNA
using InGaP/GaAs HBT technology has been reported. This LNA
only consumes 15-mW power. S 21 of 25.3 and 14.3 dB, S 11 of 6.8
and 11.5 dB, S 12 of ⫺30.8 and ⫺32.2 dB, and NF of 2.55 and 4.5
60 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 42, No. 1, July 5 2004
dB are achieved at the 1.57/5.25-GHz bands, respectively. The
performance at 5.25 GHz is comparable with the 2.45/5.25-GHz
concurrent dual-band CMOS LNA with a bonding wire as the gate
inductor using 0.35-␮m CMOS technology [1], which means the
performance of our InGaP/GaAs dual-band LNA can be better
than that of its CMOS version without the use of bonding wire.
ACKNOWLEDGMENTS
This work was supported by the National Science Council of the
R.O.C. under contract no. NSC91-2219-E-002-021. The authors
are also grateful for measurement support from the High-Fre-
quency Measurement Center of the NDL.
REFERENCES
1. H. Hashemi and A. Hajimiri, Concurrent dual-band CMOS low-noise
amplifiers and receiver architectures, 2001 Symp VLSI Circ Dig, 2001,
pp. 247–250.
2. US Frequency Allocation Chart.
3. S. Wu and B. Razavi, A 900-MHz/1.8-GHz CMOS receiver for dual-
band applications, ISSCC Dig 1998, pp. 124 –125.
4. B.A. Floyd, J. Mehta, C. Gamero, and K.O. Kenneth, A 900-MHz,
0.8-␮m CMOS low-noise amplifier with 1.2-dB noise figure, CICC
Proc 1999, pp. 661– 664.
5. D.K. Shaeffer, and T.H. Lee, “A 1.5-V 1.5-GHz CMOS Low Noise
Amplifier,” IEEE J Solid-State Circ 32 (1997), 745–759.
© 2004 Wiley Periodicals, Inc.
COMPUTATIONAL MODELING OF
SUPERCONTINUUM GENERATION IN
FUSED SILICA BY A FEMTOSECOND
LASER PULSE OF A FEW OPTICAL
CYCLES
David Hovhannisyan and Komitas Stepanyan
Epygi Labs AM
41 Arshakunyats
Yerevan Armenia, 375026
Received 6 December 2003
ABSTRACT: The numerical solution of a wave equation describing the
propagation of the laser pulse of a few optical cycles in fused silica is
obtained. Our numerical simulations closely follow the published experi-
mental data. A shifting of the spectrum peak of the broadened pulse,
depending on the input-pulse central wavelength, is observed. © 2004
Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 60 – 64, 2004;
Published online in Wiley InterScience (www.interscience.wiley.com).
DOI 10.1002/mop.20207
Key words: femtosecond pulse; third-order nonlinearity; dispersion;
supercontinuum
1. INTRODUCTION
Supercontinuum (SC) femtosecond pulses that produce a wide
optical spectrum in an optical medium excited by an intense
optical pulse have been studied in various optical media [1, 2].
Application of this unique coherent light has spread widely to
include femtosecond time-resolved spectroscopy [3], optical-pulse
compression for generation of ultrashort pulses [4], seed pulses for
optical parametric amplifiers [5], and broadband spectrum lidar
[6]. Among those applications, femtosecond time-resolved spec-
troscopy has been used extensively in the visible and near-infrared