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NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3.125 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
JUNE 1973 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
1·0
100
0·1
IC = 100 mA
IC = 300 mA
IC = 1A
IC = 3A
10 0·01
0·01 0·1 1·0 10 0·1 1·0 10 100 1000
IC - Collector Current - A IB - Base Current - mA
Figure 1. Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AC
1·0
VCE = 4 V
TC = 25°C
VBE - Base-Emitter Voltage - V
0·9
0·8
0·7
0·6
0·5
0·01 0·1 1·0 10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS631AG
100
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
IC - Collector Current - A
10
1·0
0·1
BD241
BD241A
BD241B
BD241C
0·01
1·0 10 100 1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
40
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 5.
JUNE 1973 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.