Advanced Dislocation Theory

Stacking faults
Atom stacking
Stacking sequence
Dislocation dissociation and stacking fault formation
Stress

Stacking
fault

Slipped Un-slipped
 Feasibility of a dislocation reaction

Strain energy per unit length of the dislocation line: U el = αGb 2

> b2 + b3
2 2 2
b1
Stacking fault energy: effect of ductility
 Stacking fault energy: effect of ductility
Screw dislocation Edge dislocation
2 2
Gb Gb
d SFW = d SFW =
2πγ SFE 2π (1 − ν )γ SFE

Low SFE
dSEW

High SFE
dSEW

Easier
Stacking fault energy: effect of ductility
 Definition of different types of dislocations

Perfect dislocation: Dislocation that produce complete lattice translation

Partial dislocation: Dislocation that produce incomplete lattice translation

Shockley partials: Partial dislocations Frank partials: Partial dislocations that

that can move by glide / slip cannot move by glide / slip

Unit dislocation: Perfect dislocation of unit magnitude

Glissile dislocation: Dislocation that can move by glide/slip.

(Mobile dislocation)

Sessile dislocation: Dislocation that cannot move by glide/slip. (Immobile

dislocation)
 Annealed: Easy Glide

Cold-rolled: Linear hardening

Dynamic recovery
Dislocation network inside a
deformed crystal.
Frank partials: Partial dislocations that cannot move by glide / slip

(FCC)

Stacking fault
Frank partials: Partial dislocations that cannot move by glide / slip
Lomer-Cottrell barrier (FCC)

Lomer’s reaction
 Lomer-Cottrell barrier (FCC)

Cottrell’s reaction
Interaction of leading partial dislocations.

Can be overcome by high-stress / temperature. Screw

dislocations can escape by cross-slip.
Lomer-Cottrell barrier (FCC)
Slip on different slip systems (wavy slip) in BCC
 Cottrell’s model on crack initiation in BCC by dislocation reaction

This results in a wedge cleavage crack on the (001) plane. Further propagation of this
crack is then controlled by the applied tensile stress and crack-growth is critical step.
Dislocation reaction in HCP