Você está na página 1de 6

ANSWERS

TEE 1203 MAY 2013

QUESTION ONE

1.1. When contact just formed – diffusion currents from majority carriers; forming the depletion layer from impurity
ions and the potential barrier; drift current from minority carriers. The resultant current through the junction is
zero.
When forward biased: the depletion layer width decreases, the potential barrier decreases, the forward current
increases.
When reverse biased the depletion layer width increases, the potential barrier increases, only saturation current
of minority current carriers.

1.2. VR1 = 7.7 V; IR1 = 1.64 mA; VR2 = 0 V; IR1 = 0 mA; The Si diode doesn’t conduct.

1.3.

1.4. The Gate areas are P-type, the channel is N-type. When VG increases from 0 V towards some negative value the
PN junction is reverse biased, the depletion layer expands the size of the channel changes, its resistance
increases. At some value of VG the channel is blocked. No drain current can flow even if a positive VDS is
applied.
When VG = 0 V and VDS increases from 0 V to some positive value the drain current increases for the channel
resistance decreases. At some certain value of VDS the channel ‘pinches-off’ and ID is maximum.
By varying both VG and VDS ID is controlled.
VDS

ID

G S D
_ + W
ID
IS

1.5.
IB = 19µA; IE = 2.88 mA; IC = 2.86 mA; VB = 5.88 V; VE = 5.18 V; VCE = 2.52 V; ICSAT = 3.33 mA; VCEOFF =
18 V.

QUESTION TWO

2.1. T = 298 0K, 2kT = 0.512 V

VD(V) 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 0.7 -1 -2 -10
ID 0.15 0.44 1.21 3.25 8.66 61 0.429 3 21.2 25 25 25
µA µA µA µA µA µA mA mA mA nA nA nA
A
2.2.
D4 D3
vin
vout

D1 D2
RL

When A is positive the current direction is A, D3, RL, D1, B.


When B is positive the current direction is B, D2, RL, D4, A.
Values: Vm maximum or amplitude value; Vrms = 0.707Vm; Vdc = 0.636Vm.

2.3.

2.4
I C  I E  I CBo
I E  IC  I B
I C   I C  I B   I CBo
I C  I C  I B  I CBo
(  1) I C  I B  I CBo
I B I
IC   CBo
1 1

  I CEo  (   1) I CBo
 1

2.5.
IB = 12.45µA; IE = 2.004 mA; IC = 1.992 mA; VE = 3.6 V; VCB = 4.34 V; VCE = 5.04 V; VRC = 9.36 V; ICSAT =
2.77 mA; VCEOFF = 18 V.

QUESTION THREE

3.1.
Majority current carriers (electrons) are produced from the 5 th phosphorus (P) electrons when the temperature
increases. With further increase in temperature covalent bonds are broken en electron-hole pairs generated. Holes
are the minority current carriers.

3.2.
I80 = 0 A; I50 = I200 = I100 = 0.032 A.

3.3.

3.4.

Vi  h11 I i  h12Vo
I o  h21 I i  h22Vo
Vi
h11  ,Vo  0 Short circuit input impedance.
Ii
V
h12  i , I i  0 Open-circuit reverse transfer voltage ratio.
Vo
I
h21  o ,Vo  0 Short-circuit forward transfer current ratio parameter.
Ii
I
h22  o , I i  0 Open circuit output conductance (admittance) parameter.
Vo

3.5.
IB = 7.4 µA; IE = 0.9 mA; IC = 0.893 mA; VE = 1.62 V; VCB = 6.73 V; VCE = 7.43 V; VRC = 2.95 V; ICSAT =
2.35 mA; VCEOFF = 12 V.

QUESTION FOUR

4.1.
All three have almost identical forward characteristics. In LEDs however, the threshold voltage varies from
1.8 V to 3.6 V depending on the material used.
In reverse direction all three have small (leakage) reverse current before breakdown. LEDs have limited to ~ 5V
breakdown voltages, for rectifying diodes the values are much higher. Zener diodes operate under reversible
breakdown conditions.

4.2.
All diodes conduct. VGE = 0.3 V, VSi = 0.7 V.
VR1 = 10.3 V; IR1 = 2.19 mA; VR2 = 0.97 V; VR3 = 0.43 V; IR2 = IR3 = 0.077 mA;
4.3.

4.4.
IC I
  IB  C
IB 
IC I
  IE  C
IE 
I E  IC  I B
IC IC
 IC 
 
1 1
 1
 

     
1


 1
4.5.
IB = 17.76 µA; IE = 2.88 mA; IC = 2.664 mA; ; VB = 6.6 V; VE = 5.9 V; VCE = 14.1 V; VCB = 13.4 V; ; VC = 20
V; V; ICSAT = 9.1 mA.

QUESTION 5

5.1.
A segment (LED) will light when the respective electronic switch is closed. Therefore there will be forward
current through a LED.
VCC
Common

c
a b d e f g

R R R R R R R

S1 S2 S3 S4 S5 S6 S7

5.2.
Assume that the Zener diodes are ideal when forward biased.
E = 12 V: Z1- reverse biased, Z2-forward biased. V6.8 = 0.7 V; V5.6 = 4.7 V; V2.2 = 6.6 V.
E = - 3V. Both diodes do not conduct. . V6.8 = 1.4 V; V5.6 = 1.15 V; V2.2 = 0.45 V.
5.3.
5.4. IE = IC + IB + ICBO
E EJ B CJ C

ICBo

IE IC

N IB N
P
VBE VCB

5.5.
IB = 8.5 µA; IE = 0.69 mA; IC = 0.68 mA; VCE = 10.48 V; VC = 11.18 V; VE = 0.7 V; VCB = 11.18 V.

VEE = - 9 V VCC = 15 V

IE IC

12 kΩ RE RC 5.6 kΩ

VBE VCB
IB

QUESTION SIX

6.1.
Drift current is due to applied p.d.
Diffusion current is due to concentration gradient.

6.2
V6.8 = 6 V; I6.8 = 0.88 mA; V2.2 = 6.6 V; V0.8 = 2.4 V; I2.2 = I0.8 = 3mA.

6.3.

6.4.
Input characteristics: Identical to the V-I rectifying diode forward characteristics. With an increase in VCB the
threshold voltage is reduced due to the modulation of the base area.
Output characteristics: Identical to the V-I characteristics for a reverse-biased PN junction. The output current
( IC) practically doesn’t depend on the applied voltage (VCB); The output dynamic resistance is large. IC ≈ IE.

IE IC

VCB2 > VCB1

IE4 = const
IE3 = const
IE2 = const
IE1 = const
IE = 0
VBE VCB

6.5.
IB = 11 µA; IE = 0.825 mA; IC = 0.814 mA; VB = 1.69 V; VE = 0.99 V; VCE = 4.2 V; VCB = 3.5 V. VC = 5.2 V;
ICSAT = 2.72 mA.

CORRECTIONS
Q.4.2. The answers are:
VR1 = 5.63 V; IR1 = IR4 = 1.2 mA; VR2 = 0.97 V; VR3= 0.43 V; IR2 = IR3 = 0.077 mA; VR4 = 4.67
V.
Q.4.3.
For Vout - for the positive half-cycle of the input voltage, the output follows and has a maximum
at 8 V.
For the negative halfcycle of the input voltage the output is cut at -3 V.
The resistor voltage is ok.

Você também pode gostar