MOSFET

S.vignesh
Layout team
 Transistor
● Transistor means transfer-resistance.
● BJTs, FETs and MOSFETs are all active
semiconductor devices, also known as
transistors.
● BJT:
● Its current controlled device.
● BJT have three terminals Emitter (E),Base (B)
and Collector (C)
● PN junction formed two types of BJT's depends
upon the junctions
1.NPN type 2.PNP type
 FET
● FET(Field Effective Transistor) made form P-
type or N-type semiconductor devices.
● FET required high input impedance.
● Three major terminals are Drain (D),Source(S)
and Gate(G)
● Current flows from drain to source its depends
upon the Gate voltage.
● So its called voltage controlled device.
● FET classified into two types depends upon the
channels.
1.N-channel 2.P-channel
 MOSFET
● Metal Oxide Semiconductor FET is a
semiconductor device.
● It's mainly used for switching and amplifying
electronic signals.
● Size of mosfet is very less because its
designed and fabricated in single chip.
● MOSFET have four terminal device Source(S),
Drain(D),Gate(G) and Body or Bulk(B).
 MOSFET
● The body and source is frequently connected so it is
consider as three terminal device like FET.
● Major difference between FET and MOSFET
FET:
● No Bulk or Body.
● Gate directly connected to source and drain.
MOSFET:
● It have Bulk or Body.
● Thin oxide layer is connected between gate and bulk.
● MOSFET have two different modes
1.Depletion mode
2.Enhancement mode
● Common structure of mosfet
 DEPLETION MODE
Depletion mode:
● It's required negative gate-to-source voltage to
conduct current.
● Channel between the drain to source always
formed without gate voltage.
● Applied Gate voltage should be either positive
or negative hence channel conductivity is
decreased.
● Depletion mode transistor have two types n-
channel and p-channel.
● Symbol of Depletion mode transistors
 ENHANCEMENT MODE
Enhancement Mode:
● Its required positive gate-to-source voltage to conduct
current.
● Channel between drain to source is zero at initial
condition.
● Channel formation depends upon the gate
voltage(Vgs) and threshold voltage(Vtn).
● Enhancement mode transistor are mostly used in VLSI
current Technologies.
● Enhancement mode transistor also classified
into two types
1.N-type mosfet 2.P-type mosfet
● Symbol of Enhancement transistors
 N-MOSFET
ACross section view
gate: metal or heavily doped poly-Si
G
(bulk or body source IG=0 drain
substrate) B S D
y ID=IS
IS

metal
oxide

n+ n+
p
x

W
L
 N-MOSFET
● Source have lower voltage terminal.
● Channel formation between the source and drain is
nil at the gate voltage is zero.
● N+ source and drain regions are separated by the P-
substrate.
● The distance between the source and drain is called
channel length(L).
● Latest mos technologies is 28nm.Its denoted as min
channel length.
 N-MOSFET
● In n-channel current flows from drain to source.
● Gate normally made as Poly-silicon.
● Gate is physically separated from the surface
by SIO2.
●
Cross section view

●
In p-channel current flows from source to drain.
● Gate normally made as Poly-silicon.
●
Gate is physically separated from the surface by SIO 2.
 P-MOSFET
● Source have higher voltage terminal.
● Channel formation between the source and drain is
active at the gate voltage is zero.
● p+ source and drain regions are separated by the n-
substrate.
● The distance between the source and drain is called
channel length(L).
● Latest mos technologies is 28nm.Its denoted as min
channel length.
 N-MOSFET OPERATION
Capacitor:
● In MOSFET drain,source and body are
connected to ground.
● In this case MOSFET act as Capacitor.
● Gate is act as one plate of capacitor.
● Under the thin insulating SIO2 act as other
plate.
 Threshold voltage(Vtn)
● The minimum gate-to-source voltage differential
required to create conducting path between
drain to source.
● Channel formation of mosfet fully depends on
gate voltage(Vgs) and threshold voltage(Vtn).
 GATE FORMATION
● Channel formation of N-MOSFET defined as
three modes.
1.Accumulation mode
2.Depletion mode
3.Inversion mode
● This is fully depends on applied gate-to-source
voltage(Vgs) and Threshold voltage(Vtn)
 ACCUMULATION
➢ Accumulation mode:
● Vgs<<Vtn; Vgs=0
● The applied gate-to-source voltage(Vgs=0) is less than
threshold voltage at this condition the positive charge
will be attracted to the channel region.
● The negative gate voltage simply increasing channel
doping to P+.
● Its called accumulation mode.
● Drain and Source connected to ground.
 Accumulated channel structure:
● Vgs<<Vtn; Vgs=0
gate
body source G drain
B S D VD=Vs

------
------
n++
oxide
++++++++ Accumulation
n+ n+
+++ +p + +
+

W
L
 Depletion
➢ Depletion mode:
● Vgs<<Vtn; Vgs=small positive voltage.
● Gate voltage changed from negative to some
positive values.
● Gate charged by small positive carries,diffusion
process occurs in the P substrate.
● Channel changes from P doping level to depletion
region.
 Depletion region structure:
Vgs<<Vtn; Vgs=small positive voltage
●

gate
body source G drain
+
B S - D
VD=Vs
+++
n++
oxide

n+ n+ Depletion Region
p

W
L
 INVERSION
➢ Inversion mode:
● Vgs>>Vtn; Vgs=high positive voltage
● Applied gate voltage is higher than threshold voltage(Vtn).
● The strong inversion process occurs in P substrate.
● n-Channel formed between the source and drain.
● n-channel used to conducting the current flow between drain
to source.
● Drain and source are connected to ground.
● Resulting in the equivalent circuit of two back-to-back diodes.
● Leakage current will occur depends on the source or drain
voltages becomes large.
 Inversion Structure:
Vgs>>Vtn; Vgs=high positive voltage; (Vgs-Vtn)
●
gate
body source G drain
+
B S - D
VD=Vs
+++
+++
+++
n++ N-channel formed
oxide
-------
n+ n+
Depletion Region
p
increased

W
L
 CURRENT FLOW
● The current flow between the drain to source
consider as three regions.
I.Cut-off region.
II.Linear (or) Triode Region.
III.Saturation Region (or) Active Region.
 CUT-OFF
● Vds<Vgs-Vtn; Vds=0;
● Drain current (Id) is depends on voltage
between drain to source(Vds) and gate voltage
(Vgs-Vtn) .
● Drain voltage is less than gate voltage.
● Drain voltage is almost “zero” .
● Current flow between the drain to source is “0”.
Cut-off Region Structure:
gate
body source G drain
+
B S - D
VD=0
+++
+++
+++
n++ N-channel formed
oxide
-------
n+ n+
Depletion Region
p
increased

W
L
 Triode Region
● Vds<Vgs-Vtn; Vds=0<Vds<Vgs-Vtn;
● Drain voltage is slightly increased.
● Drain and body is connected to reverse biased
condition because drain have positive voltage and
body have connected to ground.
● this condition depletion region increased linearly only
in drain side so channel voltage was reduced.
● Drain current Id is linearly increased.
● It's called triode region.
Triode Region Structure:
B S D
-+
+++ VGS1>Vt
+++
metal
n+ - oxide
- - - n+
p ID
increasing
B S -+ D VGS
+++ VGS2>VGS1
+++
+++
metal G
- -oxide
- - --
n+ n+
p

B S -+ D

+++ VGS3>VGS2
+++
+++ +++
metal
VDS
cut-off
- - -oxide
------
n+ n+ 0.1 v
p
 ACTIVE REGION
Vds=Vgs-Vtn;
Pinch off state:
● Drain to source(Vds) voltage is equal to gate-
to-source voltage(Vgs-Vtn).
● Channel region near to drain side very small
and constant.
● Channel region is constant so current flow
starts to saturation condition its called pinch off.
Pinch off Condition

Pinch off state

Depletion Region increased

 Active Region:
Vds>Vgs-Vtn;
● Drain voltage(Vds) is higher than Gate-to-
source Voltage(Vgs-Vtn) at this condition the
drain current (Id) is saturation.
● Drain and P subtract act as reversed biased.
● More depletion region formed at drain side. It is
affected the channel voltage.
Active Region:

Vds>Vgs-Vtn

Depletion Region is high

 Id versus Vds

saturation
ID
triode

increasing VDS>VGS-VT
VGS VDS<VGS-VT

VDS
 BODY EFFECT
● The amount of charge in the channel and
conduction through it's influenced by the
potential difference between body and source.
● Increasing Threshold voltage Vtn with
increasing source-to-body reverse bias voltage.