UNIVERSITY OF LAGOS

ELECTRICAL AND ELECTRONICS ENGINEERING DEPARTMENT

EEG 305 ELECTRONIC CIRCUITS I FIRST SEMESTER
TUTORIAL EXERCISES

A. TRANSMISSION NETWORKS

Qu. 1 Analyse the circuits of Fig. 1 – 3, and derive for each of them expressions for the
following parameters.
i. Input impedance
ii. Voltage transfer function

Qu. 2a. Calculate the values of the parameters in Qu.1 when frequency of input source is
f = 1kHz.
Qu. 3 Simulate each of the circuits with Multisim – Electronic Workbench and determine for
any two of the circuits the frequency response. Apply frequency values in the range
f ε[100, 106]Hz. Draw on a log-linear scale the obtained frequency characteristic.
Hint: 1. Assume an independent voltage source of values (1 – 5)V , and frequency values
(0 – 10 )Hz. Where necessary, assume the presence of load R = 10kΩ
7

2. Take for Fig. 1 R = 2.2kΩ, C = 10nF;

Fig. 2 R1 = R2 = 10kΩ, C1 = C2 = 22nF;
Fig. 3 R1 = R2 = 2.2kΩ, C1 = C2 = 47nF, R3 = kR1, C3 = C1/k, when k = 0.5 and 1.5

R C

Vi R Vo
C
Fig. 1

R1 R2

Fig. 2
Vo
Vi C1 C2
 R1 R2

C1 C2

C3
Vi Vo
R3
Fig. 3

Qu. 4. Carry out frequency analysis for the circuits in Figs. 2 and 3, and draw the magnitude and
phase response of AV = g(f), for frequency values from 10Hz to 100MHz. Use logarithmic
scale for frequency.

B. DIODE CIRCUITS

Qu1. Describe briefly the following;

a. The forward, reverse and breakdown characteristics of a junction diode
b. The behaviour of a Zener diode under forward and reverse bias conditions.

Qu2. a. Explain why the reverse saturation current varies with temperature.
b. For a silicon diode at room temperature, the manufacturer specifies a reverse saturation
current of 1nA and a forward current of 40mA at a forward voltage of 1V.
i. Predict the forward voltage required for a current of 100mA and 2mA.
ii. If the diode is connected in series with a 150Ω resistor and a 3V battery,
predict the current flowing in the circuit. State any assumptions made.

Qu3. A diode having internal resistance of 25Ω is used to supply a 1.5kΩ load from a 240Vrms
source. Calculate
i. Peak load current ii. DC load current iii. AC load current
iv. dc diode voltage v. percentage regulation.

Qu4. Design a 60Hz full wave rectifier circuit with capacitor filter to supply 55V at 50mA with
ripple factor kr < 1.5%.
a. Draw a wiring diagram and sketch graphs to show supply voltage, load voltage and current,
diode voltage and current as functions of time.
b. Specify the necessary secondary voltage (rms value).
c. Estimate the value of the capacitance of the capacitor and the expected peak diode current.
 Qu5. a. A full wave single phase rectifier consists of a double diode with forward
resistance Rf = 100Ω. The load resistance is 10kΩ, while the secondary voltage of
transformer to centre tap is 55V, 60Hz. Calculate;
i. dc load current ii. dc current in each diode. Iii. ac voltage across each
diode iv. ripples factor v. current and voltage efficiencies,

b. It is desired to reduce the peak ripples to one-third its initial value, calculate the value of
the filtering capacitor.

Qu. 6 The input voltage vi to the clipping circuits of Fig. 4 varies linearly from 0 to 200V.
Given that the diodes are ideal, draw the output voltage on the same time scale as the input.

100k D2
D1 D2 Ω
250k
D1 Ω
100k 200kΩ
vi 40V vo
vi 25V Ω 100V
vo 80V

(a) Fig. 4 (b)

Qu.7 If the diodes in question Qu.4 were to be replaced with zener diodes, draw the resultant
circuits and state the specifications of the components used.

Qu. 8 Apply the following voltage to the circuits of Fig.4 and draw on the same time scale the
input and output waveforms. Hence, state the function each circuit realises.

6𝑡 + 150 𝑓𝑜𝑟 0 ≤ 𝑡 ≤ 25
𝑣𝑖 (𝑡) = {
150 − 6𝑡 𝑓𝑜𝑟 25 ≤ 𝑡 ≤ 50
where t is in [ms] and assume (i) ideal diodes, (ii) Rd = 1kΩ.

C. TRANSISTOR CIRCUITS

Qu.1 Determine for the circuit of Fig. 5 the;

(i) state of the transistor (active, cut-off or saturated)
(ii) value of Vo (iii) minimum value of RE for which the transistor operates in
active region (iv) values of RB and RC for which transistor saturates.
Assume silicon transistor with β = 100.

Qu. 2 The transistor in Fig. 6 operates in an environment where temperature varies from 250C
to 950C. Determine the (i) value of R1 that will make Ic = 2.2mA to flow and (ii) increase in
collector current if its ICO = 5nA at 250C.
Note that thermal current in silicon doubles for every 100C rise in temperature. Assume values of
β and VBE remain constant.
 -12V 15V

5.6k R1 5.6k
Ω Ω
Q- silicon
10kΩ VBE = 0.7V
Q
Q α = 0.98
-3.5V 15k Vo
Vo
Ω 180Ω
560Ω

Fig. 5 Fig. 6

Qu. 3 Take transistor Q1 in Fig. 7 as silicon with β = 150.

a. Estimate the value of IC when IBRB is (i) negligible and (ii) finite.
b. Evaluate RC required to achieve mid frequency gain of AV = 150 V/V. Assume hie = 1.5kΩ, hre and
hoe are negligible.
c. For the value of RC calculated in (b), calculate AVeff =Vo/Vs if Rs = 1kΩ.
d. Repeat (c) when a load resistor RL = 10kΩ is connected to the output. Calculate the impedance
seen by the source for this condition.

VCC = 12V V = 15V

5.6kΩ 2.7kΩ
91kΩ C2 3.3MΩ C2

C1 C1
Q1 ZO
VO
VI 15kΩ VI 1MΩ
1.0kΩ C3 1.0kΩ C3

Zi’ ZI

Fig. 7 Fig. 8

Qu. 4 If the circuit of Fig.7 is to be used as an audio frequency amplifier in the frequency range
20Hz to 20kHz, estimate the minimum values of CB, CE and CC that will guarantee the
required passband.

Qu. 5 The transistor in Fig. 8 has IDSS = 10mA and VP = -4.5V. (a) Determine the values of its
quiescent point on both transfer and output characteristics.
(b) Evaluate VO when Vi is (i) 0V (ii) 2V and (iii) 10V.

Qu.6a. Determine the coordinates of the operating points of the transistors in Fig. 9.
b. Evaluate the dynamic parameters AI, AV, ZIN and ZOUT for the circuit.
 Hint: Determine the parameters for each stage and subsequently for the overall circuit.
VCC
Assume: Capacitors are large
RE1 CE1 Transistors are complimentary
R11 R21 RC2
C3 hie = 1.5kΩ, hfe = 180
2
hre = 1.5x10-5
C1 hoe = 20 μA/V, RL = 10kΩ
Q
1 C2 ZOUT R11 = 10kΩ, R12 = 200kΩ
Q R21 = 82kΩ, R22 = 15kΩ
2
RE1 = 220Ω, RC1 = 15kΩ
VI V RE2 = 330Ω, RC2 = 8.2kΩ
R12 RC1 R 22 R E2 RS = 100Ω
CE2 O
VCC = 15V

Zin Fig. 9
ZIN

Qu.7 Find the (a) midband gain and (b) values of capacitors required in Fig.9 to give the circuit
a cut-off frequency of 20kHz.

Qu.8 Repeat Qu. 7 for transistor parameters:

rbb’ = 200Ω, rb’e = 3.9kΩ, rce = 470kΩ, rb’c= 10MΩ, Cb’e = 85pF, Cb’c = 10pF, β = 150

VCC VCC = 12V, R11 = 220kΩ

R12 = 47kΩ, R21 = 150kΩ
RC R22 = 33kΩ, RC1 = 10kΩ
R11 R21 RC Cc
1 C2 2
RE1 = 1kΩ, RC2 = 4.7kΩ
C1 RE2 = 2.2kΩ, RS = 600Ω
Q1 hie = 1.8kΩ, hfe = 110
Q2 RL = 10kΩ
hre and hoe are negligible
C3 Q1 and Q2 are identical germanium.
VI
CE1
R12 RE1 R22 RE2 VO RL

Zin Fig. 9 ZOUT

ZIN
Qu.9 Repeat Qus 6 – 8 for Fig.9

Qu.10 Define the frequency response magnitude characteristic of an amplifier. Sketch a typical
response curve. Indicate the high and low 3dB frequencies, and also the frequency of
unity gain. Define bandwidth and gain-bandwidth product.