ELECTRONIC DEVICES AND CIRCUITS

1. As compared to a full wave rectifier using 2 diodes , the four diode bridge rectifier has
the dominant advantage of
(a) Higher current carrying
(b) lower peak inverse requirement
(c) lower ripple factor
(d) higher efficiency

2. Compared to field effect photo transistors , bipolar photo transistors are

(a) More sensitive & faster
(b) lesss sensitive & slower
(c) More sensitive & slower
(d) Less sensitive & faster

3. The 6V zener diode shown in the figure , has zero zener resistance and a knee current
of 5 mA . The minimum value of R so that the voltage across it does not fall below 6V is

(a) 0 mA , 180 mA (b) 5 mA , 110 mA (c) 10 mA , 55 mA (d) 60 mA , 180 mA

4. The voltages at V1 and V2 of the arrangement shown in the figure will be respectively,

(a) 6 V and 5.4 V (b) 5.4 V and 6 V (c) 3 V and 5.4 V (d) 6 V and 3 V

5. A heavily doped n- type semiconductor has the following data: Hole-electron ratio : 0:4
Doping concentration : 4.2 x 108atoms/m3
Intrinsic concentration : 1.5 x 104atoms/m3
 The ratio of conductance of the n -type semiconductor to that of the intrinsic
semiconductor of same material and ate same temperature is given by
(a) 0.00005 (b) 2000 (c) 10000 (d) 20000

6. The bandgap of Silicon at room temperature is

(a) 1.3 eV (b) 0.7 eV (c) 1.1 eV (d) 1.4 eV

7. A Silicon sample A is doped with 1018 atoms/cm3 of boron. Another sample B of

identical dimension is doped with 1018 atoms/cm3 phosphorus. The ratio of electron
to hole mobility is 3. The ratio of conductivity of the sample A to B is
(a) 3 (b) 3 1 (c) 3 2 (d) 2

8. The impurity commonly used for realizing the base region of a silicon npn transistor is
(a) Gallium (b) Indium (c) Boron (d) Phosphorus

9. If for a silicon npn transistor, the base-to-emitter voltage VBE is 0.7 V and the collector-
to-base voltage VCB is 0.2 V, then the transistor is operating in the
(a) normal active mode (b) saturation mode (c) inverse active mode (d) cutoff mode

10. Consider the following statements S1 and S2.

S1 : The b of a bipolar transistor reduces if the base width is increased.
S2 : The b of a bipolar transistor increases if the dopoing concentration in the base is
increased. Which remarks of the following is correct ?
(a) S1 is FALSE and S2 is TRUE
(b) Both S1 and S2 are TRUE
(c) Both S1 and S2 are FALSE
(d) S1 is TRUE and S2 is FALSE

11. Assuming VCEsat = 0.2 V and b = 50, the minimum base current IB required to drive the
transistor in the figure to saturation is

(a) 56 mA (b) 140 mA (c) 60 mA (d) 3 mA

12. In an abrupt p n - junction, the doping concentrations on the p - side and n-side are
NA9x1016/cm3 respectively. The p n junction is reverse biased and the total depletion
width is 3 µm. The depletion width on the p -side is
(a) 2.7 µm (b) 0.3 µm (c) 2.25 µm (d) 0.75 µm
13. The resistivity of a uniformly doped n -type silicon sample is 0 5 Ω-cm. If the electron
mobility (µn ) is 1250 cm2/V-sec and the charge of an electron is 16 x 10-19 Coulomb, the
donor impurity concentration (ND ) in the sample is
(a) 2 x 1016 /cm3 (b)1x1016 /cm3 (c) 2.5 x 1015 /cm3 (d) 5 x 1015 /cm3

14. n-type silicon is obtained by doping silicon with

(a) Germanium (b) Aluminium (c) Boron (d) Phosphorus

15. The Bandgap of silicon at 300 K is

(a) 1.36 eV (b) 1.10 eV (c) 0.80 eV (d) 0.67 eV

16. The intrinsic carrier concentration of silicon sample at 300 K is 1 5 x 1016 /m3. If after
doping, the number of majority carriers is 5 x 1020 /m3, the minority carrier density is
(a) 4.50 x 1011 /m3(b) 3.333 x 104 /m3(c) 5.00 x 1020 /m3 (d) 3.00x 10-5 /m3

17. Choose proper substitutes for X and Y to make the following statement correct Tunnel
diode and Avalanche photo diode are operated in X bias ad Y bias respectively
(a) X: reverse, Y: reverse
(b) X: reverse, Y: forward
(c) X: forward, Y: reverse
(d) X: forward, Y: forward

18. For an n - channel enhancement type MOSFET, if the source is connected at a higher
potential than that of the bulk (i.e. VSB > 0), the threshold voltage V T of the MOSFET
will
(a) remain unchanged (b) decrease (c) change polarity (d) increase

19. An n -type silicon bar 0.1 cm long and 100 µm2 i cross-sectional area has a majority
carrier concentration of 5 x 1020 /m2 and the carrier mobility is 0.13 m2 /V-s at 300 K. If
the charge of an electron is 1.5 x 10 -19 coulomb, then the resistance of the bar is
(a) 106 Ohm (b) 104 Ohm (c) 10-1 Ohm (d) 10-4 Ohm

20. The electron concentration in a sample of uniformly doped n-type silicon at 300 K
varies linearly from 1017/cm3 at x = 0 to 6 x 1016 / cm3 at x = 2µm . Assume a situation
that electrons are supplied to keep this concentration gradient constant with time. If
electronic charge is 1.6 x 10-19 coulomb and the diffusion constant Dn = 35 cm2/s, the
current density in the silicon, if no electric field is present, is
(a) zero (b) -112 A/cm2 (C) +1120 A/cm2 (d) -1120 A/cm2

21. Match items in Group 1 with items in Group 2, most suitably.

Group 1Group 2 P. LED 1. Heavy dopingQ. Avalanche
photo diode 2. Coherent radiation R. Tunnel diode
 3. Spontaneous emission S. LASER 4.
Current gain
(a) P - 1, Q - 2, R - 4, S - 3
(b) P - 2, Q - 3, R - 1, S - 4
(c) P - 3 Q - 4, R - 1, S – 2
(d) P - 2, Q - 1, R - 4, S – 3

22. At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward
bias of 0.1435 V, whereas a certain silicon diode requires a forward bias of 0.718 V.
Under the conditions state above, the closest approximation of the ratio of reverse
saturation current in germanium diode to that in silicon diode is
(a) 1 (b) 5 (c) 4 x 103 (d) 8 x 103

23. The action of JFET in its equivalent circuit can best be represented as a
(a) Current controlled current source
(b) Current controlled voltage source
(c) Voltage controlled voltage source ND
(d) Voltage controlled current source

24. MOSFET can be used as a

(a) current controlled capacitor
(b) voltage controlled capacitor
(c) current controlled inductor
(d) voltage controlled inductor

25. The effective channel length of MOSFET in saturation decreases with increase in
(a) gate voltage (b) drain voltage (c) source voltage (d) body voltage

26. The early effect in a bipolar junction transistor is caused by

(a) fast turn-on
(b) fast turn-off
(c) large collector-base reverse bias
(d) large emitter-base forward bias

27. An n-channel JEFT has IDSS = 2 mA and Vp =- 4 V. Its transconductance gm (in milliohm)
for an applied gate-to-source voltage VGS of -2 V is
(a) 0.25 (b) 0.5 (c) 0.75 (d) 1.0

28. An npn transistor (with C = 0.3 pF) has a unity-gain cutoff frequency fT of 400 MHz at a
dc bias current Ic = 1 mA. The value of its Cµin (pF ) is approximately (VT =26mV )
(a) 15 (b) 30 (c) 50 (d) 96
29. The electron and hole concentrations in a intrinsic semiconductor are ni and pi
respectively. When doped with a p-type material, these change to n and p,
respectively, Then
(a) n+p = ni+pi (b) npi = nip (c)n+ni = pi+pi (d) np = nipi

30. The fT of a BJT is related to its gm, Cπand Cµ as follows

𝐶𝜋+𝐶µ
(a)fT= 𝑔𝑚
2𝜋(𝐶𝜋+𝐶µ)
(b) fT = 𝑔𝑚
𝑔𝑚
(c) fT= 𝐶𝜋+𝐶µ
𝒈𝒎
(d) fT = 𝟐𝝅(𝑪𝝅+𝑪µ)

31. The static characteristic of an adequately forward biased p-n junction is a straight line,
if the plot is of
(a) log I vs V (b) log I vs V (c) I vs logV (d) I vs V

32. A long specimen of p-type semiconductor material

(a) is positively charged
(b) is electrically neutral
(c) has an electric field directed along its length
(d) acts as a dipole

33. Two identical FETs, each characterized by the parameters gm and rd are connected in
parallel. The composite FET is then characterized by the parameters
𝑔𝑚 𝒈𝒎 𝒓𝒅
(a) 𝑟𝑑 and 2rd (b) 𝒓𝒅 and 𝟐 (c) 2gm and (d) 2gm and 2rd

34. The units of kT q are

(a) V (b) V-1 (c) J (d) J/ K

35. For a MOS capacitor fabricated on a p-type semiconductor, strong inversion occurs
when
(A) surface potential is equal to Fermi potential
(B) surface potential is zero
(C) surface potential is negative and equal to Fermi potential in magnitude
(D) surface potential is positive and equal to twice the Fermi potential

36. The intrinsic carrier density at 300 K is 1.5 x 1010 /cm3 , in silicon. For n-type silicon
doped to 2.25 x 1015 / atoms cm 3 , the equilibrium electron and hole densities are
(a) n = 1.5 x 1015/cm3, p = 1.5 x 1010/cm3
(b) n = 1.5 x 1010/cm3, p = 2.25 x 1015/cm3
(c) n = 2.25 x 1015/cm3, p = 1.0 x 1015/cm3
(d) n = 1.5 x 1010/cm3, p = 1.5 x 1010/cm3

37. If a transistor is operating with both of its junctions forward biased, but with the
collector base forward bias greater than the emitter base forward bias, then it is
operating in the
(a) forward active mode
(b) reverse saturation mode
(c) reverse active mode
(d) forward saturation mode

38. The common-emitter short-circuit current gain b of a transistor

(a) is a monotonically increasing function of the collector current IC
(b) is a monotonically decreasing function of IC
(c) increase with IC , for low IC , reaches a maximum and then decreases with further
increase in IC
(d) is not a function of IC

39. In a bipolar transistor at room temperature, if the emitter current is doubled the
voltage across its base-emitter junction
(a) doubles
(b) halves
(c) increases by about 20 mV
(d) decreases by about 20 mV

40. In a MOSFET operating in the saturation region, the channel length modulation effect
causes
(a) an increase in the gate-source capacitance
(b) a decrease in the transconductance
(c) a decrease in the unity-gain cutoff frequency
(d) a decrease in the output resistance

41. Drift current in the semiconductors depends upon

(a) only the electric field
(b) only the carrier concentration gradient
(c) both the electric field and the carrier concentration
(d) both the electric field and the carrier concentration gradient

42. A silicon PN junction is forward biased with a constant current at room temperature.
When the temperature is increased by 10ºC, the forward bias voltage across the PN
junction
(a) Increases by 60 mV
(b) Decreases by 60 mV
(c) Increases by 25 mV
(d) Decreases by 25 mV
43. The channel resistance when VGS =- 3 V is
(a) 360 Ω (b) 917Ω (c) 1000 Ω (d) 3000Ω

44. At room temperature, a possible value for the mobility of electrons in the inversion
layer of a silicon n-channel MOSFET is
(a) 450 cm2/ V-s (b) 1350 cm2/ V-s (c) 1800 cm2/ V-s (d) 3600 cm2/ V-s

45. In an n-type silicon crystal at room temperature, which of the following can have a
concentration of 4 x 1019cm-3?
(a) Silicon atoms (b) Holes (c) Dopant atoms (d) Valence electrons

46. The ratio of the mobility to the diffusion coefficient in a semiconductor has the units(a)
V-1 (b) cm.V1 (c) V.cm-1 (d) V. s

47. Consider the following two statements about the internal conditions in a n -channel
MOSFET operating in the active region.
S1 : The inversion charge decreases from source to drain
S2 : The channel potential increases from source to drain.
Which of the following is correct?
(a) Only S2 is true
(b) Both S1 and S2 are false
(c) Both S1 and S2 are true, but S2 is not a reason for S1
(d) Both S1 and S2 are true, and S2 is a reason for S1

48. The built-in potential of the junction

(A) is 0.70 V
(B) is 0.76 V
(C) is 0.82 V
(D) Cannot be estimated from the data given

49. Which of the following is NOT associated with a p n - junction ?

(A) Junction Capacitance
(B) Charge Storage Capacitance
(C) Depletion Capacitance
(D) Channel Length Modulations

50. The electron and hole concentrations in an intrinsic semiconductor are ni per cm3 at
300 K. Now, if acceptor impurities are introduced with a concentration of N A per cm3
(where N A>> n i , the electron concentration per cm3 at 300 K will be)
𝒏𝒊𝟐
(a) ni (b) ni + N A (c) N A - n i (d) 𝑵𝑨
51. In a p+ n junction diode under reverse biased the magnitude of electric field is
maximum at
(a) the edge of the depletion region on the p-side
(b) the edge of the depletion region on the n-side
(c) the p+ n junction
(d) the centre of the depletion region on the n-side

52. The concentration of minority carriers in an extrinsic semiconductor under equilibrium

is
(a) Directly proportional to doping concentration
(b) Inversely proportional to the doping concentration
(c) Directly proportional to the intrinsic concentration
(d) Inversely proportional to the intrinsic concentration

53. Under low level injection assumption, the injected minority carrier current for an
extrinsic semiconductor is essentially the
(a) Diffusion current (b) Drift current (c) Recombination current (d) Induced current

54. The phenomenon known as “Early Effect” in a bipolar transistor refers to a reduction of
the effective base-width caused by
(a) Electron - hole recombination at the base
(b) The reverse biasing of the base - collector junction
(c) The forward biasing of emitter-base junction
(d) The early removal of stored base charge during saturation-tocut off switching

55. A Silicon PN junction at a temperature of 20c C has a reverse saturation current of 10

pico - Ameres (pA). The reserve saturation current at 40cC for the same bias is
approximately
(a) 30 pA (b) 40 pA (c) 50 pA (d) 60 pA

56. The primary reason for the widespread use of Silicon in semiconductor device
technology is
(a) abundance of Silicon on the surface of the Earth
(b) larger bandgap of Silicon in comparison to Germanium.
(c) favorable properties of Silicon - dioxide (SiO2 )
(d) lower melting point

57. A Silicon PN junction diode under reverse bias has depletion region of width 10 µm.
The relative permittivity of Silicon, ɛr = .11 7 and the permittivity of free space
ɛ0=8.85x10-12 F/m. The depletion capacitance of the diode per square meter is
(a) 100 µF (b) 10 µF (c) 1 µF (d) 20 µF

58. Find the correct match between Group 1 and Group 2

Group 1 Group
 E - Varactor diode 1. Voltage reference
F - PIN diode 2. High frequency switch
G - Zener diode 3. Tuned circuits
H - Schottky diode 4. Current controlled attenuator
(a) E - 4, F - 2, G - 1, H – 3
(b) E - 3, F - 4, G - 1, H – 3
(c) E - 2, F - 4, G - 1, H – 2
(d) E - 1, F - 3, G - 2, H – 4

59. In a forward biased pn junction diode, the sequence of events that best describes the
mechanism of current flow is
(a) injection, and subsequent diffusion and recombination of minority carriers
(b) injection, and subsequent drift and generation of minority carriers
(c) extraction, and subsequent diffusion and generation of minority carriers
(d) extraction, and subsequent drift and recombination of minority carriers

60. If for a silicon npn transistor, the base-to-emitter voltage(VBE) is 0.7 V and the collector-
to- base voltage (VCB) IS 0.2V, then the transistor is operating in the
(a) normal active mode
(b) saturation mode
(c) inverse active mode
(d) cutoff mode

61. A zener diode, when used in voltage syabilization circuits, is biased in

(a) reverse bias region below the
(b) reverse breakdown region
(c) breakdown voltage
(d) forward bias constant current mode
62. If a donor impurity is added to the semiconductor, then at a given temperature, the
Fermi level
(a) In a semiconductors, electron and holes move in an electric field in the same
direction
(b) Electric field density is exactly equal to the sum of electric field intensity and
polarization
(c) Ampere’s circuital law states that the line integral of 𝑯 about any closed path is
exactly equal to the direct current enclosed by that path
(d) None of the above

63. If a donor type impurity is added to the semiconductor, then at a given temperature,
the Fermi level
(a) Moves towards the center of the energy gap
(b) Moves towards the valence band
(c) Moves towards the conduction band
 (d) Doesn’t change

64. A uniform plane wave in air impinges at 450angles on a lossless dielectric material with
dielectric constant ɛr. The transmitted wave propagation in a 300C direction with
respect to the normal. The value of is ɛr is
(a) 1.5 (b) 2 (c) 1.5 (d) 2

65. Compared to electric field effect photo transistor, bipolar photo transistors are
(a) More sensitive and faster
(b) Less sensitive and slower
(c) More sensitive and slower
(d) Less sensitive and faster

66. The temperature coefficient of resistance for a thermister is

(a) low and negative (b) low and positive (c) high and negative (d) high and positive

67. The best definition of a super conductor is

(a) It is a material showing perfect conductivity and Meissner effect below a critical
temperature
(b) It is a conductor having zero resistance
(c) It is a perfect conductor with a highest diamagnetic susceptibility
(d) It is a perfect conductor but becomes resistive when the current density through it
exceeds a critical value

68. Pure metal generally have

(a) High conductivity& low temperature coefficient
(b) High conductivity& High temperature coefficient
(c) Low conductivity& zero temperature coefficient
(d) Low conductivity& High temperature coefficient

69. The mean free path for electron drift increases with
(a)Purity (b) Strain Hardening (C) Elastic modules (d)
None

70. Which of the following gives piezo electric effect

(a) µ metal (b) PVDF (C) Saphire (d) Ferrite
71. For an n-channel MOSFET, if condention parameter (kn) is 0.249 mA/V2,gate to source
voltage VQS IS 2VTN= 0.75V. The current will be
(a) 0.160 mA (b) 0.150 mA (c) 0.140 mA (d) 0.170 mA

72. If α=0.98, Ico=6 µA & IR=100 µA for a transistor, then the value of Ic will be
(a) 2.3 mA (b) 3.1 mA (c) 4.6 mA (d) 5.2 mA
73. In a p-n diode, with the increase reverse current
(a) increases (b) decreases (c) remain constant (d) uncertain

74. The dynamic resistance of diode varies as

(a) 1/I2 (b) 1/I (c) I (d) I2

75. Photo diode operate at

(a) Forward bias
(b) Breakdown region
(c) Reverse bias
(d) Saturation region

76. Which statement is correct for schottkey diode?

(a) Current voltage characteristics is totally different than that of a p-n junction diode
(b) The current is controlled by the diffusion of minority charge carriers
(c) The current results from the flow of minority carriers
(d) The storage time ts is almost zero.

77. A BJT is having common emitter current gain 100. Considering 10 V supply and VBE
=0.7V what will be the value of RC and RB to set the quiescent point at IC=10 mA and
VCE= 8V?

(a) RC= 200 Ω, RB=93 kΩ

(b) RC= 2kΩ, RB=100 kΩ
(c) RC= 83 kΩ, RB=100 Ω
(d) RC= 20Ω, RB=93 kΩ

78. Which device is suitable for higher order RF frequency multiplier?

(a) P-I-N diode (b) P-N Junction diode (c) BJT (d) Step recovery diode

79. Which of the following diodes is most suitable for detection of microwave signal?
(a) P-I-N diode (b) Schottky barrier diode (c) Varactor diode (d) P-N Junction diode

80. Common emitter DC current gain of the transistor is 100. The current through the 10V
zener diode (assuming VEE of the transistor is 0.7 V) is:
 (a) 10.3 mA (b) 19.3mA (c) 20mA (d) 40mA

81. The effective resistance faced by the voltage source is:

(a) 4Ω (b)12Ω (c) 3 Ω (d)16 Ω

82. The electrical conductivity of a semiconductor increases when a radiation of

wavelength shorter than 1000 nm is incident on it. The band gap of the semiconductor
is
(a) 2.4 eV (b) 1.2 eV (c) 3.4 eV (d) 4.0 eV

83. Common base current gain of a p-n-p bipolar transistor is 0.99. The common emitter
current gain of the transistor is
(a) 101 (b) 0.01 (c) 99 (d) 1.0

84. A sample of Si is doped with 1017 donar atoms/cm3. Considering electron mobility in the
doped Si 700 cm2/V-sec, the approximate resistivity of the doped Si is:
(a) 1 Ω-cm (b) 10 Ω-cm (c) 0.1 Ω-cm (d) 100 Ω-cm

85. Electron mobility of the following intrinsic elements in descending order is

(a) GaAs, Ge,Si (b) GaAs, Si, Ge (c)Si, Ge, GaAs (d) Ge, Si, GaAs

86. Which of the following meters is based on the principle of Hall effect?
(a) Ammeter (b) Gaussmeter (c) Voltmeter (d) All of the above

87. The orbital period of a satellite in circular orbit of radius R from the centre of the earth,
is proportional to:
(a) R1/2 (b) R3/2 (c) R2 (d) R
88. Which of the following has the highest skin depth?
(a) Aluminium (b) Gold (c) Silver (d) copper
89. The zener diode shown in following figure is temperature compensated and current
gain β of transistor is very high. If current through 100 ohm resistor is 55mA at 25 0C,
what is approximate current through it at 650C?

(a) 55mA (b) 54mA (c) 56 mA (d) 100 mA

90. Depletion mosfet operates in

(a) Depletion model only
(b) enhancement mode only
(c) both depletion and enhancement mode
(d) none of the above

91. A 24 V , 600 mW , Zener diode is to be used for providing a 24 V stabilized supply to a

variable load . Assume that for proper Zener action , a minimum of 10 mA must flow
through the Zener . If the input voltage is 32 V , what would be the value of R and the
maximum load current

(a) 320 , 10 mA (b) 400 , 15 mA (c) 400 , 10 mA (d) 320 , 15 mA

92. Oscillator requires

(a) No feedback
(b) Negative feedback
(c) Positive feedback
(d) Either positive or negative feedback

93. In a capacitor, the electric charge is stored in

(a) Dielectric
(b) metal plates
(c) dielectric as well as metal plates
(d) neither dielectric nor metal plates
94. A PN junction in series with a 100 ohm resistor is forward biased so that a current of
100 mA flows . If voltage across the combination is instantaneously reversed to 10 V at
 time t = 0 , the reverse current that flows through the junction at t = 0 is approximately
given by
(a) 0 mA (b) 200 mA (c) 50 mA (d) 100 mA

95. Ripple factor for a half wave rectifier is

(a) 1.65 (b) 1.45 (c) 1 (d) 1.21

96. Assume the intrinsic standoff ratio for the UJT is 0.8 for the relaxation oscillator circuit
given below . The frequency of oscillation of this circuit is approximately equal to

(a) 1.43 kHz (b) 620 Hz (c) 7 kHz (d) 1.6 kHz

97. A Power MOSFET is a

(a) Current controlled device
(b) Frequency controlled device
(c) Voltage controlled device
(d) None of the above

98. A 5V reference is drawn from the circuit shown in the figure . Zener diode of 40 mW and 5V with
firing current of 5mA is used . The value of is

(a) 50 ohms (b) 500 ohms (c) 75 ohms (d) 470 ohms

99. A zener diode in the circuit shown in the figure below , has a knee current of 5 mA , and a
maximum allowed power dissipation of 330 mW . What are the minimum and maximum load
currents that can be drawn safely from the circuit , keeping the output voltage Vo at
 (a) 0 mA , 180 mA (b) 5 mA , 110 mA(c) 10 mA , 55 mA (d) 60 mA , 180 mA

100. The conductivity of the intrinsic germanium at 300 K is ............... . When , ni at 300
13 2
K=2.5×10 /cmand µn and µp in germanium are 3800 and 1800 cm /Vs respectively,
(a) 0.224 S/cm (b) 0.0224 S/cm (c) 2.24 S/cm (d)0.00224 S/cm

101. Which of the following parameters of a Silicon Schottky Diode is higher than that of a
corresponding PN junction diode ?
(a) Forward voltage drop
(b) Reverse recovery current
(c) Reverse recovery time
(d) Reverse leakage current

102. What is the output voltage across the 900 ohm load in the circuit given below ?

(a) 10 V (b) 14.67 V (c) 20 V (d) 9.47 V