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3~
Standard Rectifier Module Rectifier
VRRM = 1600 V
I DAV = 27 A
I FSM = 550 A
3~ Rectifier Bridge
Part number
VUO36-16NO8
- ~ ~ ~ +
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c
Rectifier Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 1700 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V
IR reverse current VR = 1600 V TVJ = 25°C 40 µA
VR = 1600 V TVJ = 150°C 1.5 mA
VF forward voltage drop IF = 15 A TVJ = 25°C 1.04 V
IF = 45 A 1.23 V
IF = 15 A TVJ = 125 °C 0.93 V
IF = 45 A 1.18 V
I DAV bridge output current TC = 85°C T VJ = 150 °C 27 A
rectangular d=⅓
VF0 threshold voltage TVJ = 150 °C 0.76 V
for power loss calculation only
rF slope resistance 9.1 mΩ
R thJC thermal resistance junction to case 7 K/W
R thCH thermal resistance case to heatsink 1 K/W
Ptot total power dissipation TC = 25°C 17 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 550 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A
t = 10 ms; (50 Hz), sine TVJ = 150 °C 470 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 505 A
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 1.52 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.48 kA²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.11 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.06 kA²s
CJ junction capacitance VR = 400 V; f = 1 MHz TVJ = 25°C 18 pF
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c
Logo
XXX XX-XXXXX YYWW
Ordering Part Number Marking on Product Delivery Mode Quantity Code No.
Standard VUO36-16NO8 VUO36-16NO8 Box 50 465178
V0 Rectifier
I R0
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c
Outlines FO-B
6.3 x 0.8
22.1 ±0.5
10 ±0.2
12 ±0.3
D
C E
8 ±0.3
28.5 ±0.2
12 ±0.3
B
A
28.5 ±0.2
- ~ ~ ~ +
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c
Rectifier
60 450 1600
50 Hz
0.8 x V RRM VR = 0 V
50
400
1200
40
IF IFSM350
2 TVJ = 45°C
30 TVJ = 45°C It
[A] [A] 300 800
2 TVJ = 150°C
20 TVJ = 150°C
[A s]
TVJ =
125°C 250
10 150°C 400
TVJ = 25°C
0 200
0.4 0.8 1.2 10-3 10-2 10-1 100 1 10
VF [V] t [s] t [ms]
Fig. 1 Forward current vs. Fig. 2 Surge overload current Fig. 3 I2t vs. time per diode
voltage drop per diode vs. time per diode
10 24
RthJA:
DC =
0.6 KW DC =
1
0.5 0.8 KW 20 1
8
0.4 1 KW 0.5
0.33
2 KW 16 0.4
0.17
6 0.08 4 KW 0.33
Ptot IF(AV)M
8 KW 0.17
12
0.08
[W] 4 [A]
8
2
4
0 0
0 2 4 6 8 10 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150
IF(AV)M [A] TA [°C] TC [°C]
Fig. 4 Power dissipation vs. forward current Fig. 5 Max. forward current vs.
and ambient temperature per diode case temperature per diode
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c