VUO36-16NO8

3~
Standard Rectifier Module Rectifier
VRRM = 1600 V
I DAV = 27 A
I FSM = 550 A

3~ Rectifier Bridge

Part number

VUO36-16NO8

- ~ ~ ~ +

Features / Advantages: Applications: Package: FO-B

● Planar passivated chips ● Diode for main rectification ● Industry standard outline
● Very low leakage current ● For three phase bridge configurations ● RoHS compliant
● Very low forward voltage drop ● Supplies for DC power equipment ● ¼“ fast-on terminals
● Improved thermal behaviour ● Input rectifiers for PWM inverter ● Easy to mount with one screw
● Battery DC power supplies
● Field supply for DC motors

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c

© 2013 IXYS all rights reserved

 VUO36-16NO8

Rectifier Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 1700 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V
IR reverse current VR = 1600 V TVJ = 25°C 40 µA
VR = 1600 V TVJ = 150°C 1.5 mA
VF forward voltage drop IF = 15 A TVJ = 25°C 1.04 V
IF = 45 A 1.23 V
IF = 15 A TVJ = 125 °C 0.93 V
IF = 45 A 1.18 V
I DAV bridge output current TC = 85°C T VJ = 150 °C 27 A
rectangular d=⅓
VF0 threshold voltage TVJ = 150 °C 0.76 V
for power loss calculation only
rF slope resistance 9.1 mΩ
R thJC thermal resistance junction to case 7 K/W
R thCH thermal resistance case to heatsink 1 K/W
Ptot total power dissipation TC = 25°C 17 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 550 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A
t = 10 ms; (50 Hz), sine TVJ = 150 °C 470 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 505 A
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 1.52 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.48 kA²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.11 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.06 kA²s
CJ junction capacitance VR = 400 V; f = 1 MHz TVJ = 25°C 18 pF

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c

© 2013 IXYS all rights reserved

 VUO36-16NO8

Package FO-B Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 100 A
Tstg storage temperature -40 125 °C
T VJ virtual junction temperature -40 150 °C
Weight 20 g
MD mounting torque 1.8 2.2 Nm
d Spp/App terminal to terminal 9.0 7.0 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 10.0 10.0 mm
VISOL isolation voltage t = 1 second 3000 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 2500 V

Logo
XXX XX-XXXXX YYWW

Marking on product Date Code

Ordering Part Number Marking on Product Delivery Mode Quantity Code No.
Standard VUO36-16NO8 VUO36-16NO8 Box 50 465178

Equivalent Circuits for Simulation * on die level T VJ = 150 °C

V0 Rectifier
I R0

V 0 max threshold voltage 0.76 V

R 0 max slope resistance * 7.9 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c

© 2013 IXYS all rights reserved

 VUO36-16NO8

Outlines FO-B

6.3 x 0.8
22.1 ±0.5
10 ±0.2

12 ±0.3

D
C E
8 ±0.3
28.5 ±0.2
12 ±0.3

B
A

28.5 ±0.2

- ~ ~ ~ +

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c

© 2013 IXYS all rights reserved

 VUO36-16NO8

Rectifier
60 450 1600
50 Hz
0.8 x V RRM VR = 0 V
50
400
1200
40
IF IFSM350
2 TVJ = 45°C
30 TVJ = 45°C It
[A] [A] 300 800
2 TVJ = 150°C
20 TVJ = 150°C
[A s]
TVJ =
125°C 250
10 150°C 400
TVJ = 25°C
0 200
0.4 0.8 1.2 10-3 10-2 10-1 100 1 10
VF [V] t [s] t [ms]

Fig. 1 Forward current vs. Fig. 2 Surge overload current Fig. 3 I2t vs. time per diode
voltage drop per diode vs. time per diode

10 24
RthJA:
DC =
0.6 KW DC =
1
0.5 0.8 KW 20 1
8
0.4 1 KW 0.5
0.33
2 KW 16 0.4
0.17
6 0.08 4 KW 0.33
Ptot IF(AV)M
8 KW 0.17
12
0.08
[W] 4 [A]
8

2
4

0 0
0 2 4 6 8 10 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150
IF(AV)M [A] TA [°C] TC [°C]

Fig. 4 Power dissipation vs. forward current Fig. 5 Max. forward current vs.
and ambient temperature per diode case temperature per diode

ZthJC Constants for ZthJC calculation:

4
[K/W] i Rth (K/W) ti (s)
1 0.040 0.005
2
2 0.150 0.030
3 1.710 0.400
4 5.100 2.300
0
1 10 100 1000 10000 100000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c

© 2013 IXYS all rights reserved