AO4406

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4406/L uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON), low gate charge and ID = 11.5A (VGS = 10V)
operation with gate voltages as low as 2.5V. This RDS(ON) < 14mΩ (VGS = 10V)
device makes an excellent high side switch for RDS(ON) < 16.5mΩ (VGS = 4.5V)
notebook CPU core DC-DC conversion. AO4406 and
RDS(ON) < 26mΩ (VGS = 2.5V)
AO4406L are electrically identical.
-RoHS Compliant
-AO4406L is Halogen Free UIS TESTED!
Rg,Ciss,Coss,Crss Tested

S D
S D
S D
G D G
S
SOIC-8

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 11.5
AF
Current TA=70°C ID 9.6 A
B
Pulsed Drain Current IDM 80
Avalanche Current B IAV 25 A
B
Repetitive Avalanche Energy L=0.3mH EAV 94 mJ
TA=25°C 3
PD W
Power Dissipation TA=70°C 2.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient AF t ≤ 10s 23 40 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 48 65 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 12 16 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4406

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.8 1 1.5 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 60 A
VGS=10V, ID=12A 11.5 14
mΩ
TJ=125°C 16 19.2
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=10A 13.5 16.5 mΩ
VGS=2.5V, ID=8A 19.5 26 mΩ
gFS Forward Transconductance VDS=5V, ID=10A 25 38 S
VSD Diode Forward Voltage IS=10A,VGS=0V 0.83 1 V
IS Maximum Body-Diode Continuous Current 4.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1630 2300 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 201 pF
Crss Reverse Transfer Capacitance 142 200 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.4 0.8 1.8 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 13.5 18 24 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=11.5A 2.5 nC
Qgd Gate Drain Charge 5.5 nC
tD(on) Turn-On DelayTime 4 6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.2Ω, 5 7.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 32 50 ns
tf Turn-Off Fall Time 5 10 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 18.7 24 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 12.5 15 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev9: May 2011

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50
30
10V 4.5V
3V 2.5V 25 VDS=5V
40

20
30
ID (A)

ID(A)
15
20
2V 125°C
10
25°C
10
5
VGS=1.5V
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

30 1.8
ID=10A VGS=10V
25
Normalized On-Resistance

VGS=2.5V 1.6

20 VGS=4.5V
RDS(ON) (mΩ )

VGS=4.5V 1.4
15
VGS=2.5V
10 1.2
VGS=10V

5 1

0
0 5 10 15 20 25 30 0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

40 1.0E+01

ID=10A VGS=0V
1.0E+00
30 125°C
1.0E-01
RDS(ON) (mΩ )

125°C
IS (A)

20 1.0E-02

25°C
25°C 1.0E-03

10
1.0E-04

1.0E-05
0
0.0 0.2 0.4 VSD 0.6
(Volts) 0.8 1.0 1.2
0.00 2.00 4.00 6.00 8.00 10.00
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 2500
VDS=15V
2250
ID=11.5A
4 2000

Capacitance (pF)
1750 Ciss
VGS (Volts)

3 1500
1250
2 1000
750 Coss
Crss
1 500
250
0
0
0 4 8 12 16 20 24
0 5 10
15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
50
10µs TJ(Max)=150°C
RDS(ON) 100µs
1ms TA=25°C
limited 40
Power (W)

10.0 10ms 30
ID (Amps)

0.1s
20
1s
1.0 10s 10

TJ(Max)=150°C
TA=25°C DC 0
0.001 0.01 0.1 1 10 100 1000
0.1 Pulse Width (s)
0.1 1 10 100 Figure 10: Single Pulse Power Rating Junction-to-
VDS (Volts) Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=65°C/W
Thermal Resistance

PD
0.1

Single Pulse Ton

T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

70 4
ID(A), Peak Avalanche Current

TA=25°C
60

Power Dissipation (W)

L ⋅ ID 3
50 tA =
BV − VDD
40
2
30 10s

20
1
Steady-
10 State

0 0
0.00001 0.0001 0.001 25 50 75 100 125 150
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Avalanche capability Figure 13: Power De-rating (Note A)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4406

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds

DUT -
Vgs

Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com