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BTS244Z
®
Speed TEMPFET®
N-Channel
Enhancement mode
1
Logic Level Input 1
Analog driving possible
5 PG-TO263-5-2 5 PG-TO220-5-12
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection •Green Product (RoHS Compliant)
Avalanche rated •AEC Qualified
G Pin 1
A Pin 2
Temperature
Sensor
K Pin 4
S Pin 5
Maximum Ratings
Parameter Symbol Value Unit
Drain source voltage VDS 55 V
Drain-gate voltage, RGS = 20 k V 55
DGR
Gate source voltage VGS 20
Nominal load current (ISO 10483) ID(ISO) A
VGS = 4.5 V, VDS 0.5 V, TC = 85 °C 19
VGS = 10 V, VDS 0.5 V, TC = 85 °C 26
Continuous drain current 1) ID 35
TC = 100 °C, VGS = 4.5V
Pulsed drain current ID puls 188
Avalanche energy, single pulse EAS 1.65 J
ID = 19 A, RGS = 25
Power dissipation Ptot 170 W
TC = 25 °C
Operating temperature 2) Tj -40 ...+175 °C
Peak temperature ( single event ) Tjpeak 200
Storage temperature Tstg -55 ... +150
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
junction - case: RthJC - - 0.88 K/W
Thermal resistance @ min. footprint Rth(JA) - - 62
Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 33 40
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th)
ID = 130 μA 1.2 1.6 2
ID = 250 μA - 1.65 -
Zero gate voltage drain current IDSS μA
VDS = 50 V, VGS = 0 V, Tj = -40 °C - - 0.1
VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1
VDS = 50 V, VGS = 0 V, Tj = 150 °C - - 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V, Tj = 25 °C - 10 100
VGS = 20 V, VDS = 0 V, Tj = 150 °C - 20 100
Drain-Source on-state resistance RDS(on) m
VGS = 4.5 V, ID = 19 A - 16 18
VGS = 10 V, ID = 19 A - 11.5 13
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Forward transconductance gfs 25 - - S
VDS>2*ID *RDS(on)max , ID = 35 A
Input capacitance Ciss - 2130 2660 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance Coss - 600 750
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance Crss - 320 400
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time td(on) - 15 25 ns
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Rise time tr - 70 105
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Turn-off delay time td(off) - 40 60
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Fall time tf - 25 40
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Reverse Diode
Inverse diode continuous forward current IS 35 - - A
TC = 25 °C
Inverse diode direct current,pulsed IFM 188 - -
TC = 25 °C
Inverse diode forward voltage VSD - 1.25 1.8 V
VGS = 0 V, IF = 94 A
Reverse recovery time trr - 110 165 ns
VR = 30 V, IF =IS, diF/dt = 100 A/μs
Reverse recovery charge Qrr - 0.23 0.35 μC
VR = 30 V, IF =IS, diF/dt = 100 A/μs
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at http://www.infineon.com/tempfet/
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Sensor Characteristics
Temperature sensor leakage current IAK(off) - - 4 μA
Tj = 150 °C
Min. reset pulse duration 1) treset 100 - - μs
Tj = -40...+150 °C, IAK(on) = 0.3 mA,
VAK(Reset)<0.5V
VAK Recovery time1)2) trecovery - - 150
Tj = -40...+150 °C, IAK(on) = 0.3 mA
Characteristics
Holding current, VAK(off) = 5V IAK(hold) mA
Tj = 25 °C 0.05 - 0.5
Tj = 150 °C 0.05 - 0.3
Thermal trip temperature TTS(on) 150 160 170 °C
VTS = 5V
Turn-off time (Pin G+A and K+S connected) toff 0.5 - 2.5 μs
VTS = 5V, ITS(on) = 2 mA
Reset voltage VAK(reset) 0.5 - - V
Tj = -40...+150°C
tre s e t
V A K [V ]
5
4
0
t re c o v e ry
S ensor O N R eset OFF
180 40
140
30
120
Ptot
25
ID
100
20
80
15
60
10
40
20 5
0 0
-40 0 40 80 120 °C 180 0 20 40 60 80 100 120 140 °C 180
TC TC
K/W
K/W
D=0.5 10 0
1
10
D=0.5
0.2
Z thJC
Z thJA
0.2
0.1
10 -1 0.1
0.05
0.05
10 0
0.02 0.02
0.01 10 -2 0.01
10 -1 Single pulse
10 -3
Single pulse
-2 -4
10 -5 -4 -3 -2 -1 0 1 3
10 -8 -7 -6 -5 -4 -3 -2 -1 0 1 3
10 10 10 10 10 10 10 s 10 10 10 10 10 10 10 10 10 10 10 s 10
tp tp
A 10V
7V
140 6V
120
ID
ID
100 5V
80
4.5V
60
4V
40 3.5V
20 3V
0
0 1 2 V 4
VDS
40 30
m
max. m max.
30
RDS(on)
RDS(on)
typ. 20
25 typ.
20 15
15
10
10
5
5
0 0
-50 -25 0 25 50 75 100 125 °C 175 -50 -25 0 25 50 75 100 125 °C 175
Tj Tj
A V
2.0
80
1.8
VGS(th)
70 130mA
1.6
ID
60 13mA
1.4
50 1.2 1.3mA
40 1.0
0.8 130μA
30
0.6
20
0.4
10
0.2
0 0.0
0 1 2 3 V 5 -50 -25 0 25 50 75 100 125 °C 175
VGS Tj
nF 150°C
Ciss 10 1 25°C
IF
C
10 0
Coss
10 0
Crss
10 -1 10 -1
0 4 8 12 16 20 24 28 32 V 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6
VDS VSD
BTS 244 Z
16 66
V V
V(BR)DSS
12 62
VGS
8 58
6 56
4 54
2 52
0 50
0 20 40 60 80 100 nC 140 -40 0 40 80 120 °C 180
QGate Tj
Package Outlines
1 Package Outlines
4.4
10 ±0.2
1.27 ±0.1
0...0.3
A B
8.5 1)
1 ±0.3
0.05
2.4
7.55 1)
9.25 ±0.2
1.3 ±0.3
0.1
(15)
2.7 ±0.3
4.7 ±0.5
0...0.15
5 x 0.8 ±0.1 0.5 ±0.1
4 x 1.7
8˚ MAX.
0.25 M A B 0.1 B
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut. GPT09062
Figure 1 PG-TO263-5-2
10 ±0.2
A
9.9 ±0.2 B
8.5 1) 4.4
3.7 -0.15 1.27 ±0.1
0...0.3
1)
15.65 ±0.3
2.8 ±0.2
12.95
17 ±0.3
0.05
9.25 ±0.2
2.4
11 ±0.5
13 ±0.5
1)
Typical
Metal surface min. X = 7.25, Y = 12.3
All metal surfaces tin plated, except area of cut.
Figure 2 PG-TO220-5-12
Package Outlines
Revision History
2 Revision History
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