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2SB861

Silicon PNP Triple Diffused

ADE-208-862 (Z)
1st. Edition
Sep. 2000

Application

Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138

Outline

TO-220AB

1. Base
2. Collector
(Flange)
1
2 3 3. Emitter

Absolute Maximum Ratings (Ta = 25°C)


Item Symbol Rating Unit
Collector to base voltage VCBO –200 V
Collector to emitter voltage VCEO –150 V
Emitter to base voltage VEBO –6 V
Collector current IC –2 A
Collector peak current I C(peak) –5 A
Collector power dissipation PC 1.8 W
1
PC * 30 W
Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C
2SB861

Electrical Characteristics (Ta = 25°C)


Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown V(BR)CBO –150 — — V I C = –50 mA, RBE = ∞
voltage
Emitter to base breakdown V(BR)EBO –6 — — V I E = –5 mA, IC = 0
voltage
Collector cutoff current I CBO — — –1 µA VCB = –120 V, IE = 0
1
DC current transfer ratio hFE1* 60 — 200 VCE = –4 V, IC = –50 mA
hFE2 60 — — VCE = –10 V, IC = –500 mA*2
Collector to emitter saturation VCE(sat) — — –3 V I C = –500 mA, IB = –50 mA
voltage
Base to emitter voltage VBE — — –1 V VCE = –4 V, IC = –50 mA
Collector output capacitance Cob — 30 — pF VCB = –100 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SB861 is grouped by hFE1 as follows.
2. Pulse test

B C
60 to 120 100 to 200

Maximum Collector Dissipation Curve


40
Area of Safe Operation
Collector power dissipation Pc (W)

–10

30 –5
IC (max) (Continuous)
Collector Current IC (A)

DC

–2
(–15 V, –2 A)
O
pe

20 –1.0
ra
tio

TC
n
(T C

–0.5
=
25

10 (–60 V, –0.4 A)
°C

–0.2
)

1.8 W –0.1
Ta
(–150 V, –65 mA)
0 50 100 150 200 –0.05
Ambient temperature Ta (°C) –2 –5 –10 –20 –50 –100 –200
Case temperature TC (°C) Collector to emitter Voltage VCE (V)

2
2SB861

Typical Output Characteristics Typical Transfer Characteristics


–1.0 –1,000
–8 –7 VCE = –4 V
TC = 25°C –500
–6

Collector current IC (mA)


–0.8
Collector Current IC (A)

TC = 75°C 25 –25
–5
–200
–0.6 –4
–100
–3 –50
–0.4
–2
–20
–0.2 –1 mA
–10
IB = 0
–5
0 –4 –8 –12 –16 –20 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0
Collector to emitter Voltage VCE (V) Base to emitter voltage VBE (V)

DC Current Transfer Ratio vs. Collector to Emitter Saturation


Collector Current Voltage vs. Collector Current
500 –10
Collector to emitter saturation voltage

VCE = –4 V IC = 10 IB
TC = 75°C
DC current transfer ratio hFE

–5
200
25
100 –2
VCE (sat) (V)

–25

50 –1.0 TC = 75°C

–0.5 25
20 –25

10 –0.2

5 –0.1
–10 –20 –50 –100 –200 –500–1,000 –10 –20 –50 –100 –200 –500–1,000
Collector current IC (mA) Collector current IC (mA)

3
2SB861

Package Dimensions

Unit: mm

11.5 MAX

10.16 ± 0.2 4.44 ± 0.2


2.79 ± 0.2

9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
8.0 –0.1
+0.2
6.4

15.0 ± 0.3
1.27
18.5 ± 0.5

2.7 MAX

1.5 MAX
14.0 ± 0.5
7.8 ± 0.5

0.76 ± 0.1

2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1

Hitachi Code TO-220AB


JEDEC Conforms
EIAJ Conforms
Mass (reference value) 1.8 g

4
2SB861

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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Semiconductor & Integrated Circuits.
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For further information write to:
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0

5
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