Escolar Documentos
Profissional Documentos
Cultura Documentos
2SB941, 2SB941A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1266 and 2SD1266A
Unit: mm
■ Features 10.0±0.2 4.2±0.2
0.7±0.1
● High forward current transfer ratio hFE which has satisfactory linearity
5.5±0.2 2.7±0.2
● Low collector to emitter saturation voltage VCE(sat)
4.2±0.2
● Full-pack package which can be installed to the heat sink with
7.5±0.2
one screw φ3.1±0.1
16.7±0.3
■ Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol Ratings Unit
1.3±0.2
Collector to 2SB941 –60
4.0
1.4±0.1
VCBO V
14.0±0.5
base voltage 2SB941A –80
Solder Dip
0.5 +0.2
–0.1
*h Rank classification
FE1
Rank Q P
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
hFE1 70 to 150 120 to 250
rank classification.
1
Power Transistors 2SB941, 2SB941A
PC — Ta IC — VCE IC — VBE
50 –6 –10
(1) TC=Ta TC=25˚C VCE=–4V
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)
Al heat sink –5
40 (3) With a 50 × 50 × 2mm –8
10 –12mA –2
(2) –1
(3) –8mA
(4) –4mA
–16mA
0 0 0
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)
VCE(sat) — IC hFE — IC fT — IC
–100 10000 10000
Collector to emitter saturation voltage VCE(sat) (V)
25˚C
–3 300 TC=100˚C 300
–1 100 100
–25˚C
– 0.3 30 30
TC=100˚C
– 0.1 10 10
–25˚C
– 0.03 25˚C 3 3
– 0.01 1 1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A) Collector current IC (A) Collector current IC (A)
–30
102 (1)
Collector current IC (A)
–10
ICP
–3 t=1ms (2)
IC 10
10ms
–1
DC 1
– 0.3
– 0.1
10–1
2SB941A
2SB941
– 0.03
– 0.01 10–2
–1 –3 –10 –30 –100 –300 –1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)
2
This datasheet has been download from:
www.datasheetcatalog.com