10 1016@j Spmi 2017 10 020

Superlattices and Microstructures xxx (2017) 1e15
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Superlattices and Microstructures

journal homepage: www.elsevier.com/locate/superlattices
Noise characterization of enhancement-mode AlGaN graded

barrier MIS-HEMT devices
A. Mohanbabu*, R. Saravana Kumar, N. Mohankumar
S.K.P Engineering College, Tiruvannamalai, India
a r t i c l e i n f o a b s t r a c t
Article history: This paper reports a systematic theoretical study on the microwave noise performance of
Received 30 August 2017 graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors
Accepted 16 October 2017 (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices
Available online xxx
designed for this study show an outstanding small signal analog/RF and noise perfor-
mance. The results on 1 mm gate length device show an enhancement mode operation with
Keywords:
threshold voltage, VT ¼ þ 5.3 V, low drain leakage current, Ids,LL in the order of 1 109 A/
Low-frequency noise (LFN)
mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation
Enhancement-mode (E-mode)
MIS-HEMT
frequency fmax of 47 GHz at Vds ¼ 10 V. The device IeV and low-frequency noise estimation
Breakdown voltage of the gate and drain noise spectral density and their correlation are evaluated using a
Noise spectral density Green's function method under different biasing conditions. The devices show a minimum
Minimum noise figure (NFmin) noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of
23 U at 17 GHz, at Vgs ¼ 6 V and Vds ¼ 5 V which is relatively low and is suitable for broad-
band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with
HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.
© 2017 Elsevier Ltd. All rights reserved.
1. Introduction
For a robust wireless communication system, AlGaN/GaN HEMTs are the best suitable candidates due to their low noise
and high performance characteristics at higher frequencies. In radio receivers, the front end module consists of low noise
amplifiers (LNAs). These LNAs must have low minimum noise figure (NFmin) and higher gain [1]. GaN based low noise devices
eliminate the necessity of extra protection components in LNAs resulting in improved noise performance. AlGaN/GaN HEMTs
have excellent properties like high breakdown voltage (VBR), high 2-Dimensional electron gas (2DEG) with higher mobility.
These properties make an AlGaN/GaN HEMT a potential candidate for high-power and fast-switching device with low energy
loss [2] compared to a conventional silicon-based device. Traditionally, HEMTs operate in depletion mode due to their large
2DEG induced by polarization at the AlGaN/GaN interface. In power electronics, the switching devices require high efficiency
and high power density. These devices must have low conduction loss and operate at higher frequencies with respect to the
conventional Si-based devices. Thus, in recent days, the low noise GaN HEMT devices have generated a tremendous interest
amongst the researchers due to their great potential to offer superior performance at high-power electronic circuits.
Traditional transceiver consists of separate power device and LNAs. This requires two different DC sources or a converter [3].
* Corresponding author.
E-mail address: babumohan95@gmail.com (A. Mohanbabu).
https://doi.org/10.1016/j.spmi.2017.10.020
0749-6036/© 2017 Elsevier Ltd. All rights reserved.
Please cite this article in press as: A. Mohanbabu et al., Noise characterization of enhancement-mode AlGaN graded barrier MIS-
HEMT devices, Superlattices and Microstructures (2017), https://doi.org/10.1016/j.spmi.2017.10.020
2 A. Mohanbabu et al. / Superlattices and Microstructures xxx (2017) 1e15
Thus, the conventional low noise microwave-amplifier design is expensive and inefficient. On the other hand, GaN based
technology can use only one amplifier to fulfil all these requirements.
Other critical issues of GaN devices are leakage and current collapse phenomena that increase the dynamic resistance
during switching. We now that high gate leakage along with high power consumption limits the device scaling with respect
to gate length [4]. In order to overcome the scaling limitations, the high- k materials are widely used as insulators growing on
semiconductors to develop metal-insulator-semiconductor (MIS) gates for large gate swing voltages and lower leakage
currents. MIS device structures with high- k gate dielectric suitable with III-V channel are believed to enhance the electro-
static gate control, minimize the gate leakage to much larger extent and help in device scaling [5]. Very favourable microwave
and noise performance for III-V HEMT and MIS-HEMT devices has been illustrated by the pioneering work [6e14]. However,
the low-frequency noise and microwave characteristics of HfAlOx graded barrier MIS-HEMTs have not been investigated yet.
In this study, an AlGaN/GaN MIS-HEMT using HfAlOx as a gate insulator is studied and DC and RF/microwave noise per-
formance is discussed. One of the probable reasons for the dependency of low frequency noise (LFN) on the gate and drain bias
is the presence of the gate and drain leakage current noise in the output noise [15]. The use of high- k HfAlOx as a gate
insulator (k ~ 14) and as an effective passivation layer on AlGaN/GaN graded barrier MIS-HEMT provides new opportunities
for low-noise applications. Compared to the reported HEMTs [6e12], the MIS-HEMTs have a larger gate voltage swing, lower
subthreshold characteristics, reduced leakage current, enhanced microwave performance, and reduced noise performance.
Therefore, it is of great interest to study the LFN characteristics of these devices for reliable RF/microwave operations. In
nonlinear circuits, up-conversion of LFN to microwave frequencies may result in degradation of circuit performance. In order
to suppress the noise at high bias, it is necessary to analyze the special noise mechanism in GaN HEMTs [3]. In inclusion, LFN
often emerges from defects and traps and can be an effective tool to identify the issues of materials and technologies [16].
Given the importance of trap distribution in GaN HEMTs, the LFN computation is a powerful tool in the investigation of the
reliability of these devices similar to MOSFETs [17], especially gate oxide integrity. Therefore, an investigation of LFN
mechanism in AlGaN MIS-HEMTs is crucial for better understanding of the reliability physics of these devices.
In the earlier work [18], we performed a detailed theoretical study on the electrostatics of the graded barrier AlGaN MIS-
HEMT devices on Al2O3 substrate. In this paper, the microwave-noise performance, especially, LFN of the same devices is
analyzed. Although, a limited theoretical work has been performed to understand the influence of the internal physical
mechanism of noise in these devices, in this paper, the LFN study is shown to be used as a diagnostic tool to evaluate the
quality and locate defects in the proposed MIS-HEMT as a benchmark for the reliability of the devices [19]. In order to achieve
our objective, first of all, a Green's function approach is used to investigate the current and voltage spectral densities that
offers a detailed information on the defects in crystal (1/f noise sources), generation (G)-recombination (R) or GR-processes
(fluctuation noise) and shot noises to the LFN spectra i.e.; the influence of a current or voltage fluctuations at the gate/drain
terminals [20]. Then the correlation between the gate and drain fluctuations is analyzed. Finally, using a noisy two-port
network, the noise parameters are evaluated and discussed.
2. Device architecture
In order to analyze various device performances and to achieve a better understanding of the devices, a graded barrier
AlGaN/GaN MIS-HEMT device structure is designed on Al2O3 substrate [18] as shown in Fig. 1(a) along with the source of
fundamental noise mechanism shown in Fig. 1(b). The device includes a 2 mm Al0.07Ga0.93N buffer layer, 15 nm GaN channel
layer, 10 nm Al0.15Ga0.85N first supply layer (SL1), 10 nm Al0.07Ga0.93N piezo-neutralization, PNT layer, and 25 nm Al0.25Ga0.75N
second supply layer (SL2). The device contains a graded AlGaN barrier with highest Al content at the gate/insulator/barrier
interface. The topmost Al0.25Ga0.75N barrier layer has the maximum energy band gap; hence it provides resistance to the gate
current flow from the gate approaching the channel through the barrier leading to a decrease in the gate leakage current and
an increase in the polarization driven charges. An Al0.07Ga0.93N buffer is used to increase VT and PNT layer is used to improve
VT uniformity. The regions with source/drain (S/D) contacts are doped with arsenic active doping 1 1020 cm3 and with the
abrupt doping profile. The source to gate and gate to drain access region length, Lgs ¼ 1 mm and Lgd ¼ 15 mm is used in device
design and the gate length is set to Lg ¼ 1 mm. The HfAlOx thickness is tins ¼ 20 nm, and LGPS (field-plate at source) and LGFP
(field-plate at drain) with values 0.5 mm and 0.9 mm, respectively.
One of the most critical parameters is the amount of interface charges including polarization charges of AlGaN and GaN
layers that are placed at each hetero-interface of the device structure in Fig. 1. The sheet charge densities for the corre-
sponding interface charges are calculated following the model formulation described in Refs. [21,22]. The material with
HfAlOx/AlGaN is found to provide a fixed interface trap density in the order of Nit ~2.9 1013 cm2 [23]. The acceptor traps
with a concentration of 1 1015 cm3 are used in the Al0.07Ga0.93N buffer layer to make the substrate semi-insulating; these
traps are located 0.45 eV underneath the bottom of the conduction band. For the GaN/Al0.07Ga0.93N interface layer, the trap
concentration is set to be 6 1012 cm3 is used for the acceptors; these traps are located 0.23 eV underneath the bottom of the
conduction band.
The device construction shown in Fig. 1(a) is appropriately biased to analyze the electrostatic behavior and circuit per-
formance as described in the following section.
The simulation of the proposed devices is performed using the Sentaurus TCAD K-2016 simulator [23]. Our intended
procedure is in the organization of the hydrodynamic (HD) model that we find effective for noise evaluation even for the sub-
micron gate length devices [24]. Using this model, two-dimensional (2-D) numerical approaches to investigate the effect of
A. Mohanbabu et al. / Superlattices and Microstructures xxx (2017) 1e15 3
Lgs Lgd
LGPS Lg LGFP
Ls Ld
Si3N4 V
Si3N4 k
(e- SL2),
Gate Al0.25Ga0.75N Gate
25 nm
-
(e SL2), 25 nm Graded AlGaN
barrier
Source
Source
Drain
Drain
HfAlOx, 20nm tins
HfAlOx, 20nm Insulator
Al0.07Ga0.93N PNT, 10nm
tAlGaN
Gate leakage
Al0.15Ga0.85N (e- SL1), (Shot noise), ishot Vgs1/f noise (i1/f)
10nm
GaN Channel, 15nm
GaN
Al0.07Ga0.93N Buffer, Channel V fluctuation
2000nm noise, iV
AlN neucleation layer, 1nm
Al2O3 Substrate Buffer
Electron
a b Interface trap states in gate insulator
(HfAlOx)/ AlGaN barrier and AlGaN
barrier/ channel interface
Fig. 1. a. Schematic cross sectional view of the proposed device with a polarization graded barrier AlGaN MIS-HEMT using high-k HfAlOx insulator used for
numerical device simulation; Lg, LGFP, Lgs and Lgd are the gate length, gate field plate and S/D to gate access region lengths, respectively; tins and tAlGaN is the
insulator thickness and thickness of graded AlGaN barrier. b. Fundamental noise mechanism in graded barrier AlGaN with GaN channel MIS-HEMTs.
spectral densities for the gate and drain noise current sources and their correlation are estimated using a Green's function
method, an approximate to Shockley's impedance field technique [25]. We have performed a different set of measurement of
spectral density of current fluctuations in both gate (Sig) and drain (Sid) electrodes, as well as the correlation co-efficient
between these two extrinsic noise current sources over a wide frequency range.
3. Results and discussions
Fig. 2 shows the conduction band energy band position relative to the Fermi level (EF) for different Vgs (¼ 0, 6 V) is plotted
for the various regions of the device and electron concentration profile across the channel under the gate and achieved a
maximum n2DEG ~ 8.465 1017 cm3 at Vgs ¼ 6 V. After simulation, the acquired representation of energy band profile is
plotted in Fig. 2. It is noticed that when the gate voltage rises from 0 to 6 V, there is an alteration in the potential drop across
the insulator and graded barrier. The barrier height for the electron in 2DEG also reduces from 5 eV at Vgs ¼ 0e1 eV at
Vgs ¼ 6 V, as shown in Fig. 2. The reduction in the potential barrier height increases the possibility of electron flow across the
barrier, leads to increases in drain current and thereby increasing the device leakage current in the range from 1 1015 at
Vds ¼ 0 V to 1 109 at Vds ¼ 10 V with VT of þ5.3 V extracted from IdseVgs transfer characteristics in Fig. 3. Fig. 3 shows the
transconductance (gm) characteristics for graded AlGaN barrier MIS-HEMT for the devices with Vds ¼ 0, 5, 10 V. The higher
values of the gm commence to high saturation velocity and n2DEG density. For increasing values of Vgs, the value of gm decreases
because n2DEG saturates and therefore, the current density no longer increases with Vgs [26].
Fig. 4 (a) shows the CeV characteristics of a recessed step graded AlGaN barrier MIS-HEMT with different LGFP. To un-
derstand the increase in gate capacitance (Cgg) with increasing LGFP, we consider the channel potential, VK at the gate field
plate edge of the drain contact as shown in Fig. 1. With the increase in the field plate length LGFP, the point VK moves near to the
drain and hence the access region resistance on the drain side of the device reduces [27]. Since Cgg increases for a device with
lower access region resistances, therefore, an increase in Cgg with increasing LGFP is observed as shown in Fig. 4 (a). For MIS-
HEMT devices, the total Cgg can be given as [28].
Cgg ¼ Series ðCins þ CBarrier ÞkCgs kCgd (1)
Fig. 2. Conduction band profile, Fermi level distribution and electron density (n2DEG) versus depth in mm for Lgd ¼ 15 mm and LGFP ¼ 0.9 mm under the gate
electrode for two different gate biases (Vgs ¼ 0, 6 V) at Vds ¼ 10 V and electron density (n2DEG) is extracted at Vgs ¼ 6 V.
Fig. 3. Transfer characteristics (Ids-Vgs) and transconductance (gm) of the device for various Vgs ¼ 0, 3, 5, 6, 10 V with Lg ¼ 1 mm, Lgd ¼ 15 mm and with
LGFP ¼ 0.9 mm at Vds ¼ 10 V.
Cins ¼ ε0 εins A=t (2)

ins
where, tins denotes the insulator thickness, Cins and Cbarrier are the insulator and barrier layer capacitances in the device
channel, respectively i.e., depletion layer capacitance comprises of graded AlGaN barrier layers with permittivity (εb) with
GaN channel, ε0 is the vacuum permittivity, εins is the dielectric constant of high- k HfAlOx dielectric, and A is the capacitor
area. Cgs and Cgd are the gate to source and gate to drain capacitances, respectively. Cgs and Cgd include the inner (Cif) and outer
(Cof) fringing capacitances.
The important figure of merit (FOM) for RF application of devices is the ft and the fmax that depend on Cgg and gm of the
devices as shown in Fig. 4 (b). It is observed from Fig. 4(a) that the value of Cgg is higher for higher LGFP. Now, we know that the
frequency ft defines the unity-gain current and is an important device parameter for high speed digital applications of the
devices. Similarly, the frequency fmax that defines the unity-gain power corresponding to the transit frequency of the
Fig. 4. (a) Gate capacitance (Cgg) versus gate voltage Vgs of the device for Lgd ¼ 15 mm with Lg ¼ 1 mm and different LGFP ¼ 0.9e3.6 mm at Vds ¼ 10 V. (b) Cut-off (fT)
and maximum frequency of oscillation (fmax) versus gate voltage Vgs of the device for Lg ¼ 1 mm, Lgd ¼ 15 mm with different LGFP ¼ 0.9e3.6 mm at Vds ¼ 10 V.
maximum available power gain (MAG) and is an important measure of RF performance of the devices [29]. Thus, a suitable
procedure must be used to extract both ft and fmax to assess the RF performance of AlGaN MIS-HEMTs shown in Fig. 1. Now, in
order to extract ft and fmax, first of all, a small signal AC analysis is performed over a wide range of frequencies using a 2-D
device simulator to generate the admittance or, Y-parameters of the devices [23]. Then, an advanced two-port network
RF-extraction post processing tool is used to convert the simulated admittance and capacitance values to H-parameters,. And,
finally, H and Y-parameters are used to compute the values of fT and fmax from the expressions given by Ref. [29].
Fig. 5. VBR,OFF (current Ids versus voltage Vds) of graded barrier AlGaN with GaN channel MIS-HEMTs for Lg ¼ 1 mm, Lgd ¼ 15 mm with different LGFP ¼ 0.9e3.6 mm at
Vgs ¼ 0 V with substrate grounded.
fT ¼ f0 jH21 j (3)
sffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
jY21 Y12 j2
fmax ¼ f0 (4)
4½ReðY11 ÞReðY22 Þ ReðY12 ÞReðY21 Þ
In Eq. (3), f0 is the applied frequency (1 MHz) and H21 is the short circuit current gain corresponding only to intrinsic
transistors; whereas, in Eq. (4), the Y parameters (Y11, Y12, Y21, and Y22) are for the extrinsic transistor which includes parasitic
gate, source, and drain resistances Rg, Rs and Rd, respectively. Since Cgg increases with the increase in LGFP [Fig. 4(a)], therefore,
ft and fmax decreases with the increase in the value of LGFP as shown in Fig. 4 (b). In this study, a high peak fT of 17 GHz and fmax
of 47 GHz at Vds ¼ 10 V for LGFP ¼ 0.9 mm is achieved.
Fig. 5 shows the variation of the OFF-state breakdown voltage, VBR,OFF with substrate grounded for different LGFP. It is
established that the introduction of LGFP reduces the maximum electric field underneath and creates splitting of the electric
field peaks in the gate to drain access region [18], which suppresses the effect of impact ionization due to high applied
voltages, thus suppressing the rapid increase in the noise value [3]. The splitting of electric field peaks and its distribution
corresponding to a higher VBR, OFF with increasing LGFP is shown in Fig. 5. It is observed from Fig. 5 that low OFF-state drain and
gate leakage currents (Ids,LL and Igs,LL) in the order of 1 1012 and 1 1015 A/mm at Vgs ¼ 0 V, respectively are achieved for
the 1 mm gate length HfAlOx MIS-HEMT devices used in this study. Fig. 5, also shows that VBR,OFF increases with the increase in
LGFP and for the values of LGFP ¼ 0.9, 1.8, 2.7 and 3.6 mm, the values of VBR,OFF are 215, 308, 417, 567 V, respectively.
As discussed earlier, the devices with a lower value of LGFP ¼ 0.9 mm show a higher value of noise. Analyzing the device
performance in these dimensions gives detailed information on the origin of noise behavior in HfAlOx MIS-HEMT. Noise
simulation in SDEVICE is performed using standard AC modeling technique including noise models under the device physics
section [23]. Thus, the parasitic effects for noise modeling are considered during AC simulation. And, the simulated data are
used to extract the noise parameters. The small-signal equivalent circuit used for the noise analysis is shown in Fig. 6.
For a complete analysis of the noise behavior of the devices, the small-signal characteristics are, also, analyzed [11] in
addition to the analysis of the spectral densities of the current and voltage fluctuations.
We have performed a different set of measurements on the gate and drain accesses to compute gate voltage spectral
density (SVg), gate current spectral density (Sig), drain voltage spectral density (SVd), and drain current spectral density (Sid)
and obtained the correlation co-efficient between these two extrinsic noise current sources over a wide frequency range at
both the gate and drain electrodes. This noise measurement technique offers an effective noise characterization tool and the
simulation data provides extensive information on the defects and their progression in AlGaN/GaN HEMTs [30].
Cgd
Gate Drain
Rg Vx Cgs Cds
g mV x Rd id
ig Ri
id = id,v+ id,1/f+ id,shot
ig = ig,v+ ig,1/f + ig,shot Rs
Source
Ig Noiseless transistor
Id
Noisy
transistor
Correlation
Fig. 6. Small-signal equivalent circuit model used in the noise analysis. Inside the dotted box is the intrinsic noise equivalent-circuit model with ig and id
representing correlated intrinsic noise sources containing voltage fluctuation noise (iV), shot noise (ishot) and 1/f noise (i1/f). Vx is the deterministic drive signal; Rg,
Rs and Rd have extrinsic thermal noises.
Fig. 7 shows the variation of gate (SVg) and drain (SVd) voltage spectral densities with respect to frequency at Vds ¼ 5 V with
Vgs ¼ 0, 3, 5, 6 V. The physical mechanism of LFN can be explained as follows: The traps located at the gate-insulator/barrier
and barrier/channel interfaces capture and reemit some of the drain current carrying carriers from the source to drain of the
devices [31]. This random capture and emission of carriers by interface traps cause variation in the charging state of the traps.
This causes elementary voltage fluctuations in the channel and impacts Ids. The resulting random fluctuations in Ids produces
high leakage current that can generates numerous traps in the channel region under the gate of the transistors which in turn
causes fluctuations in the tuning gate and drain voltages. These fluctuations in gate and drain voltages can be analyzed using
SVg and SVd shown as shown in Fig. 7. Generally, Svd and Svg increase with Ids, however, for the devices used in this study, a
maximum is reached between Vgs ¼ 6 V and Vgs ¼ 3 V as shown in Fig. 7 (i.e., at Vgs ¼ 5 V). As shown Fig. 7, the spectral density
(s) of noise is inversely proportional to frequency as s~1/f [30], and tends to decrease at higher frequencies as expected for 1/f
noise characteristics.
Fig. 8 shows the variation of drain current spectral density (Sid) as a function of frequency at Vds ¼ 5 V and Vgs ¼ 0, 3, 5, 6 V.
In Fig. 8, the inflexion on Sid is attributed to the effect of gate bias on conduction band due to a larger number of GR centers
located at the graded AlGaN/GaN interface. The maximum value of Sid also corresponds to the bias point where gm attains its
maximum value. The results agree with the fact that the carrier number fluctuations (and surface density of slow trap centers)
do not cause a decrease of the spectral density [32]. When Vgs is at or near the pinch-off condition, the conduction band
electrons in the devices are confined close to its interface, and Sid reaches its maximum value. This is due to the G-R noise due
to random transition of carriers between states, that is, an electron emission from an occupied trap centre to the conduction
band followed by a hole emission from the valence band to the empty trap centre (G) and electron capture by an empty trap
centre from the conduction band followed by a hole capture by the occupied centre from the valance band (R) [33]. The
increase of Sid in Fig. 8 is attributed to the fluctuations induced in the potential barrier controlling the current flow through
the channel due to the charge injection [34]. These potential fluctuations are strongly coupled with the drain current fluc-
tuations (id,V), leading to the large increase observed in Sid. This effect is of great interest when designing ultra-scaled HEMTs
for low-noise applications.
Fig. 8, also shows the variation of the gate current spectral density (Sig) as a function of frequency at Vds ¼ 5 V and Vgs ¼ 0, 3,
5, 6 V. As shown in Fig. 8, a low-frequency enhancement in Sig is due to the generation of the DC gate current, Igs originating by
the tunnel injection through the Schottky contact. In fact, at high voltages, electrons are injected randomly into the device
generating full shot noise gate current (ig,shot) which is the source of noise commonly associated to the gate leakage current
[35]. Furthermore, it is observed from Fig. 8 that at high Vgs, the value of Sig is comparable to or even higher than that of Sid.
Now, it is well-known that the induced gate noise is primarily due to the charge fluctuations in the channel region of a device
caused by thermal noise of carriers. Therefore, the induced gate noise increases with the increase in the charge fluctuations.
Again, as Vgs increases, the number of hot electrons generated in the channel increases causing an increase in the fluctuations
of the channel charge and therefore, an increase in Sig as shown in Fig. 8. Thus, the hot carriers cause an increase in Sid as well
as Sig as shown in Fig. 8 which agrees very well with the proposed mechanism by Van der zel [36].
Now, the expressions for Sig, Sid and the correlation factor, Ccor between drain and gate noise equivalent sources are given
by Ref. [37].
i2g i2d Sig Sid

Sig ¼ ; Sid ¼ and Ccor ¼ qffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi (5)
Df Df S *S ig id
The accurate knowledge of Sig, Sid and Ccor is important to characterize the channel noise. The correlation is essentially an
imaginary number [35,37] because of the capacitive coupling between the channel and gate. The negligible correlation is
Fig. 7. Gate and drain voltage noise spectral density of MIS-HEMT versus frequency for Vgs ¼ 0e6 V and Vds ¼ 5 V with Lg ¼ 1 mm, LGFP ¼ 0.9 mm.
Fig. 8. Gate and drain current noise spectral density of MIS-HEMT versus frequency for Vgs ¼ 0e6 V and Vds ¼ 5 V with Lg ¼ 1 mm, LGFP ¼ 0.9 mm.
evident from our simulation data shown in Fig. 9. This is because of the traps located near the metal-insulator/barrier
interface which lead to noise source in Igs. For Ids, the noise is mainly due to the barrier/channel interface. These noises are
independent and do not interfere with each other as shown in Fig. 9 for frequencies below 10 GHz. And, the increase in the
correlation parameter Ccor for frequencies above 100 GHz can be attributed to the increase in rate of GR process in the channel
region of the devices.
Fig. 10 shows the equivalent input-referred current and voltage noise spectral density obtained from the gate and drain
current noise spectral density versus frequency data using the relation [37].
Sid
SI ¼ Sig ; SV ¼ 2
(6)
gm
where SV and SI are the equivalent input-referred voltage and current noise spectral densities, respectively; Sid is the drain
current noise
spectral density; and gm is the transconductance of the device. It is observed from Fig. 10 that at a relatively low
value of Vgs < 5 V, the noise spectral density depends on Vgs [38] and decreases as Vgs increases. This is because if Vgs is
increased keeping Vds the same, the sheet carrier electron density, n2DEG increases and coulomb interaction between the
Fig. 9. Correlation coefficient between the gate and drain noise current sources versus frequency for Vgs ¼ 0e6 V and Vds ¼ 5 V with Lg ¼ 1 mm, LGFP ¼ 0.9 mm.
Fig. 10. Input-referred voltage and current noise spectral density of MIS-HEMT versus frequency for Vgs ¼ 0e6 V and Vds ¼ 5 V with Lg ¼ 1 mm, LGFP ¼ 0.9 mm.
scattering centers and channel carrier decreases due to the high carrier concentration screening effects [16]. As a result, a
reduced noise level is observed. At Vgs < 5 V, the input referred current noise spectral density SI is proportional to the square of
2 . If V is above V (V > 5 V), S increases somewhat faster and saturates, the noise is nearly in-
the gate voltage, or, SI z Vgs gs T gs I
dependent of the gate bias and decreases at Vgs ¼ 6 V. Similarly, the value of SV, is also gate bias dependent as shown in Fig. 10.
And, for Vgs above the channel pinch-off voltage, the value of SV is independent of Vgs as shown in Fig. 10.
Vn
Linear Noiseless Two

is in
Cpg port network Cpd
Ys = Gs+jBs Input-equivalent
Source Noise sources
Fig. 11. Equivalent noise circuit with noise sources (Vn, In) at the input. Cpg and Cpd denotes the pad capacitances.
Typically, a linear two-port noisy network [39] is used to analyze the internal noise sources as shown in Fig. 11. However, a
linear noisy two-port network can be replaced by a noise-free two-port network, one noise voltage source, and one noise
current source. In actual devices, these two noise sources are correlated or partially correlated [40]. The noise factor mea-
surements performed on the two port network directly yield the noise parameters of the general circuit representation,
namely the fluctuations (spectral densities) of the voltage and current generators attached to the input of the noise free
equivalent of the two ports shown in Fig. 11. From the point of view of the circuit designers, the noise performance of MIS-
HEMT is characterized by three parameters: the minimum noise figure NFmin, the noise conductance Gn (or noise resistance
Rn) and the optimum source impedance Zopt (or optimum source admittance Yopt).
The noise figure of a two-port network is defined as the ratio between the input and output signal-to-noise ratios [41] and
is characterized by the parameters minimum ratio, NFmin, optimum source admittance, Yopt, or complex reflexion coefficient,
G, and the equivalent noise resistance, Rn and conductance, Gn. Here, NFmin is defined as the minimum noise ratio of the input
and output signal-to-noise ratios at a given working point, Yopt ¼ (Gopt þ jBopt) and G ¼ (Y0-Yopt)/(Y0þYopt) [42] which is the
commonly measured quality, and Z0 ¼ 1/Y0 is the characteristic impedance of the system, generally 50 U i.e., the generator
impedance that minimizes the noise figure; Rn and Gn are the measure of the noise figure sensitivity to changes of the source
impedance with respect to the optimum value. The NF and NFmin, are extracted using the reported procedure and the ex-
pressions [43],
Sout =Nout
NF ¼ (7)
Sin =Nin
The Noise Figure can also be expressed by the following equations [44]:
Rn 2 Rn 2
NF ¼ NFmin þ Gs Gopt þ Bs Bopt (8)
Gs Gs
Fig. 12. Optimum source admittance of MIS-HEMT versus frequency for Vgs ¼ 0e6 V and Vds ¼ 5 V with Lg ¼ 1 mm, LGFP ¼ 0.9 mm.
Fig. 13. Equivalent noise resistance and conductance of MIS-HEMT versus frequency for Vgs ¼ 0e6 V and Vds ¼ 5 V with Lg ¼ 1 mm, LGFP ¼ 0.9 mm.
qffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
NFmin ¼ 1 þ 2Rn Gcor þ 2 Rn Gn þ R2n G2cor (9)
where Rn is the noise resistance, Gn is the noise conductance, Ys ¼ Gs þ jBs is the signal source admittance, Ycor ¼ Gcor þ jBcor is
the correlation admittance and the optimum source admittance Yopt ¼ Gopt þ jBopt, where Gopt and Bopt are the optimal source
conductance and susceptance [45], respectively as shown in Fig. 12. From Eq. (8), if the source admittance is selected as
Gs ¼ Gopt and Bs ¼ Bopt, the NFmin can be realized [11]. The voltage and current fluctuations (or the spectral densities) that
characterize the internal noise sources within the frequency interval Df, one defining the equivalent noise resistance Rn,
conductance Gn and correlation admittance Ycor and as [46].
i2d
Rn ¼ Rs þ Rg þ (10)
4KB Ta jY21 j2 Df
SV
¼ Rs þ Rg þ (10a)
4KB Ta jY21 j2
SI
Gn ¼ (11)
4KB Ta jY21 j2

Sigid
Ycor ¼ Re Y11 Y21 (12)
Sid
In these expressions, Rs and Rg are the extrinsic source and gate parasitic resistances, KB the Boltzmann constant, Ta is the
reference temperature 290 K and Df the frequency bandwidth. Y11 and Y21 are the device admittance parameters. For oper-
ating frequencies lower than the intrinsic cut-off frequency fT ¼ gm/2pCgg, the magnitude of Y21 is nearly equal to trans-
conductance gm [46]. The variation of Rn and Gn versus frequency is presented in Fig. 13. The use of Rn has the advantage that a
direct comparison can be made between the noise due to internal sources and the noise of resistances generally present in the
circuit [10]. An increase of Rn at lower frequency is a typical indication and presence of gate leakage shot noise. The Rn is
relatively flat with frequency, approximately 23 U at 17 GHz. Typically, in broadband LNA designs, the devices with low values
of Rn are used to prevent degradation in the overall noise figure for the case of source impedance mismatch to the optimum
termination [10].
Fig. 14. (a) Minimum noise figure (NFmin) of MIS-HEMT versus frequency for Vgs ¼ 0 to 6 and Vds ¼ 5 V with Lg ¼ 1 mm, LGFP ¼ 0.9 mm. (b) The variation of NFmin and
Rn with respect to Vds from 5 to 10 V measured at a fixed Vgs ¼ 6 V with Lg ¼ 1 mm, LGFP ¼ 0.9 mm. (c) The variation of NFmin and Rn with respect to Lg ¼ 0.15, 0.25,
1 mm for Vds ¼ 5 and Vgs ¼ 6 V with LGFP ¼ 0.9 mm.
In Fig. 14 (a), we show the bias and frequency dependence of NFmin, for an MIS-HEMT device with 1 mm gate length at room
temperature for a fixed Vds ¼ 5 V. There is an additional noise source, related to gate noise, which causes an increase in NFmin
at the lowest frequencies [47]. The slight increase of NFmin at low frequencies for the MIS-HEMT is due to the trapping effect. In
the case of an increase in Vgs, the number of carriers into the channel increases [48] (i.e.; increase in channel conductance)
resulting in a decrease in noise. The improved NFmin of 1.05 dB at 17 GHz for Vgs ¼ 6 V and Vds ¼ 5 V for MIS-HEMT devices
shown in Fig. 14 is due to the reductions in gate leakage current and intrinsic drain and gate noises [42] caused by the
presence of the HfAlOx gate insulator in the MIS-HEMT structure compared to conventional devices [6e14].
Fig. 14 (b) shows the variation of NFmin and Rn as a function of drain bias, Vds from 5 to 10 V and fixed Vgs ¼ 6 V. It is observed
from Fig. 14 (b) that as the value of Vds increases from 5 V to 6 V, the value of NFmin increases sharply by about 0.07 dB and for
Vds 6 V, the increases in NFmin with Vds is insignificant. The initial sharp increase in NFmin with Vds is due to the fluctuations of
the carrier velocity in the channel [49]. Typically, NFmin increases due to several factors including increase of Ids as well as
power dissipation [49]. As Vds increases above 5 V, the carrier velocity approaches to saturation and the precondition fluc-
tuations in the carrier density is most likely to account for the initial rise in NFmin. And, as the carriers attain saturation
velocity for Vds y 6 V, the value of NFmin approaches to a constant value as shown in Fig. 14 (b). The simulation data show that
the values of NFmin are 1.053, 1.125, 1.126, 1.127, 1.129 and 1.130 dB at 17 GHz for Vds ¼ 5, 6, 7, 8, 9 and 10 V, respectively with
Vgs ¼ 6 V.
Fig. 14 (b), also, shows the variation of Rn as a function of Vds at Vgs ¼ 6 V. The observed high value of Rn at low values of Vds <
6 V is due to the lower value of gm [Fig. 3] and higher extrinsic Rs caused by relatively lower low-field electron mobility m0 in
AlGaN/GaN 2DEG channel [50]. And, for Vds 6 V, the value of Rn is independent of Vds as shown in Fig. 14 (b). The results of
this study show that the values of NFmin and Rn are, also much improved in the MIS-HEMT devices.
Table 1
Comparison of NFmin and Rn values with the state-of-the-art HEMT and MIS-HEMT devices [6e14] along with our proposed work.
Material combination Gate length Minimum noise Figure (NFmin) Noise equivalent resistance (Rn)
(Lg)
Al0.3Ga0.7N/GaN/Al0.06Ga0.9N/ 1 mm 3.9 dB at 30 GHz with Vds ¼ 10 V and Vgs ¼ 0 V e
GaN DC-HEMT [6]
Al0.3Ga0.7N/GaN/In0.1Ga0.9N/ 1 mm 0.98 dB at 10 GHz with Vds ¼ 6 V e
GaN DH-HEMT [7]
Al0.3Ga0.7N/Al0.05Ga0.95N/GaN 1 mm 1.08 dB at 10 GHz with Vds ¼ 8 V e
HEMT [8]
In0.18Al0.82N/GaN HEMT [9] 0.15 mm 1.82 dB at 20 GHz with Vds ¼ 15 V and Vgs ¼ 1.5 V 19 U at 10 GHz and 12 U at 20 GHz
AlGaN/GaN HEMT [10] 0.25 mm 0.75 dB at 10 GHz and 0.98 dB at 18 GHz with Vds ¼ 8 V and 38.5 U at 10 GHz and 31 U at 18 GHz
Vgs ¼ 3.3 V.
AlGaN/GaN HEMT [11] 0.25 mm 1.25 dB at 6 GHz with Vds ¼ 4 V 25 U at 6 GHz
AlInN/AlN/GaN HEMT [12] 0.15 mm 1.5 dB at 12 GHz and 2.5 dB at 26 GHz with Vds ¼ 10 V and 30 U at 12 GHz and 15 U at 26 GHz
Vgs ¼ 1 V
Al2O3/Al0.26Ga0.74N/GaN MIS- 0.25 mm 2.25 dB at 20 GHz with Vds ¼ 6 V and Vgs ¼ 3.5 V 23 U at 20 GHz
HEMT [13]
Al2O3/AlGaN/GaN MIS-HEMT 0.25 mm 2.4 dB at 20 GHz with Vds ¼ 8 V 63 U at 20 GHz
[14]
HfAlOx/Al0.15Ga0.85N/ 1 mm 1.053, 1.125, 1.126, 1.127, 1.129 and 1.130 dB for 23, 18.0, 18.023, 18.033, 18.043 and
Al0.07Ga0.93/Al0.25Ga0.75N Vds ¼ 5, 6, 7, 8, 9 and 10 V at 17 GHz with Vgs ¼ 6 V 18.059 U
MIS-HEMT (This Work) for Vds ¼ 5, 6,7,8,9 and 10 V at 17 GHz
0.25 mm 1.01 dB for Vds ¼ 5 V at 17 GHz with Vgs ¼ 6 V 21.3 U for Vds ¼ 5 V at 17 GHz
0.15 mm 0.98 dB for Vds ¼ 5 V at 17 GHz with Vgs ¼ 6 V 18.3 U for Vds ¼ 5 V at 17 GHz
Fig. 14 (c) shows the impact of scaling of Lg on NFmin and Rn. With increasing Lg, the values of Ids and gm decreases. At lower
current density and the high value of Rn is due to the low value of intrinsic gate gm [51] according to the model formulation
described in Eq (10 a). The shorter Lg can help reduce NFmin, Rn due to larger gm, smaller Cgg and higher fT [52].
This improvement in NFmin and Rn offers an excellent noise matching as well as a possibility of high gain at low noise
condition, hence, a more flexible Monolithic Microwave Integrated Circuit (MMIC) design. These results, clearly, show that the
AlGaN/GaN MIS-HEMT devices with HfAlOx gate insulator have a great potential for low-noise applications at microwave
frequencies and exhibits better device performance compared to the published data mentioned in Table 1.
Fig. 15. Overall noise figure (NF) of MIS-HEMT versus frequency for Vgs ¼ 0e6 V and Vds ¼ 5 V with Lg ¼ 1 mm, LGFP ¼ 0.9 mm.
Fig. 15 shows the overall noise figure (NF) versus frequency with various Vgs ¼ 0, 3, 5, 6 V for a fixed Vds ¼ 5 V. The overall NF
is directly proportional to both NFmin and Rn and it is inferred from Eq (8). The increase of NF at lower frequencies is mainly due
to the impact of increase in NFmin and Rn and it is displayed in Fig. 15.
In this work, DC, RF and microwave noise performance of graded AlGaN barrier MIS-HEMTs with optimized hetero-
structure have been investigated. This study shows that the high performance and low-noise MIS-HEMT devices can be
achieved with appropriate device architecture and optimization. The simulation data show that for 1 mm gate length MIS-
HEMTs, the E-mode can be achieved with VT of þ5.3 V, fT of 17 GHz, and fmax of 47 GHz at Vds ¼ 10 V. The simulation data,
also, show that a superior RF/microwave performance of these devices are achieved with low NFmin of 1.05 dB along with a
low value of Rn of 23 U at 17 GHz with biasing condition, Vgs ¼ 6 V and Vds ¼ 5 V due to reduced leakage currents. These results
agree very well with the reported data on the conventional AlGaN/GaN HEMTs of comparable gate dimensions. Thus, the
HfAlOx/AlGaN MIS-HEMTs devices show a great potential for microwave low-noise applications. Therefore, this study clearly
demonstrates that the GaN MIS-HEMT devices with a high degree of structural design improvements, leading to development
of these transistors with ultra low noise due to reduced leakage current by having HfAlOx as gate insulator.
Acknowledgement
This work was supported by a Senior Research Fellowship (SRF) by the Council of Scientific and Industrial Research (CSIR),
Govt. of India with grant no: 09/468/0497/2016 EMR-I.
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Contents lists available at ScienceDirect

Superlattices and Microstructures

Noise characterization of enhancement-mode AlGaN graded

3. Results and discussions

Cgg ¼ Series ðCins þ CBarrier ÞkCgs kCgd (1)

Cins ¼ ε0 εins A=t (2)

i2g i2d Sig Sid

Linear Noiseless Two

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