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Vishay Semiconductors
Transmissive Optical Sensor with Phototransistor Output
FEATURES
• Package type: leaded
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 11.9 x 6.3 x 10.8
• Gap (in mm): 3.1
19180_5 • Typical output current under test: IC = 4 mA
(TCST1103)
Top view
• Typical output current under test: IC = 2 mA (TCST1202)
+ D
• Typical output current under test: IC = 0.5 mA (TCST1300)
• Daylight blocking filter
E + • Emitter wavelength: 950 nm
0.3" • Lead (Pb)-free soldering released
19180_3
7.6 mm • Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
The TCST1103, TCST1202, and TCST1300 are transmissive APPLICATIONS
sensors that include an infrared emitter and phototransistor, • Optical switch
located face-to-face on the optical axes in a leaded package
which blocks visible light. These part numbers include • Photo interrupter
options for aperture width. • Counter
• Encoder
PRODUCT SUMMARY
TYPICAL OUTPUT CURRENT DAYLIGHT
GAP WIDTH APERTURE WIDTH
PART NUMBER UNDER TEST (1) BLOCKING FILTER
(mm) (mm)
(mA) INTEGRATED
TCST1103 3.1 1 4 Yes
TCST1202 3.1 0.5 2 Yes
TCST1300 3.1 0.25 0.5 Yes
Note
• Conditions like in table basic characteristics/coupler
ORDERING INFORMATION
ORDERING CODE PACKAGING VOLUME (1) REMARKS
TCST1103 Tube MOQ: 1020 pcs, 85 pcs/tube Without mounting flange
TCST1202 Tube MOQ: 1020 pcs, 85 pcs/tube Without mounting flange
TCST1300 Tube MOQ: 1020 pcs, 85 pcs/tube Without mounting flange
Note
• MOQ: minimum order quantity
300
Coupled device
200
Phototransistor
IR-diode
100
0
0 30 60 90 120 150
95 11088 Tamb - Ambient Temperature (°C)
IF
0
tp t
IC
IF IF +5V
0 100 %
IC adjusted by IF 90 %
R G = 50 Ω
tp
= 20
T
t p = 1 ms 10 %
0
tr
Channel I Oscilloscope t
td ts tf
R L ≥ 1 MΩ t on t off
Channel II
C L ≤ 20 pF tp Pulse duration ts Storage time
50 Ω 100 Ω td Delay time tf Fall time
tr Rise time t off (= ts + tf) Turn-off time
20688 t on (= td + tr) Turn-on time 96 11698
Fig. 2 - Test Circuit for ton and toff Fig. 3 - Switching Times
1000 2.0
CTR rel - Relative Current Transfer Ratio
VCE = 5 V
I F = 20 mA
IF - Forward Current (mA)
100 1.5
10 1.0
1 0.5
0.1 0
0 0.4 0.8 1.2 1.6 2.0 - 25 0 25 50 75 100
96 11862 VF - Forward Voltage (V) 95 11089 Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature
10 000 100
VCE = 25 V VCE = 5 V
IF = 0 A
1000
10
100
1
10
1 0.1
0 25 50 75 100 0.1 1 10 100
95 11090 Tamb - Ambient Temperature (°C) 96 12068 I F - Forward Current (mA)
Fig. 6 - Collector Dark Current vs. Ambient Temperature Fig. 9 - Current Transfer Ratio vs. Forward Current
10 20
VCE = 5 V
operation
1 15 VS = 5 V
R L = 100 Ω
0.1 10
t on
0.01 5
t off
0.001 0
0.1 1 10 100 0 2 4 6 8 10
96 12066 I F - Forward Current (mA) 95 11086 I C - Collector Current (mA)
Fig. 7 - Collector Current vs. Forward Current Fig. 10 - Turn-off/Turn-on Time vs. Collector Current
10 110
I F = 50 mA
100 0
I Crel - Relative Collector Current
A = 1 mm
20 mA
I C - Collector Current (mA)
90
10 mA 80
1
70 s
5 mA
60
50
2 mA
40
0.1
30
1 mA
20
10
0.01 0
0.1 1 10 100 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5
96 12067 VCE - Collector Emitter Voltage (V) 96 12005 s - Displacement (mm)
Fig. 8 - Collector Current vs. Collector Emitter Voltage Fig. 11 - Relative Collector Current vs. Displacement
110 110
0 0
I Crel - Relative Collector Current
Fig. 12 - Relative Collector Current vs. Displacement Fig. 13 - Relative Collector Current vs. Displacement
Drawing-No.: 6.550-5039.01-4
Issue: 2; 10.11.98
96 12094
20252
15198
Fig. 1
15210
Fig. 2
15201
Fig. 3
15199
Fig. 4
15202
Fig. 5
15196
Fig. 6
15195
Fig. 7
20257
Fig. 8
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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