ABSTRACT

MOSFET have attracted considerable interest for low power applications

because of their promise to deliver steep sub threshold swing, and thus enable an
aggressive scaling of supply voltage. Down scale size of MOS devices leads to
various short channel effects and high leakage current. When the MOSFET
dimension is scaled down to nanometre (<100 nm), many physical barriers arise,
like short channel effects (SCEs). In this project, we have planned to analyze the
model of Dual Material Double Gate MOSFET in RF applications and the parameter
like center potential, electric field, electrostatic potential and threshold voltage. The
advantages of JLDMDG MOSFET are proved by comparing the central electrostatic
potential and electric field distribution with those of junctionless single-material
double-gate (JLSMDG) MOSFET. The model shows the device parameters such as
silicon thickness, oxide thickness, and doping concentration affect the threshold
voltage. The variations of the threshold voltage roll-off, drain-induced barrier
lowering (DIBL), and subthreshold swing with the channel length are investigated.
It is proved that the device performance for JLDMDG MOSFET can change flexible
by adjusting the length ratios of control gate and s