DOE Solar Pathways Report

Optical Constants of Crystalline
and
Amorphous Semiconductors
Numerical Data and Graphical Information

Optical Constants of Crystalline
and
Amorphous Semiconductors
Numerical Data and Graphical Information
Sadao Adachi
Department of Electronic Engineering

Gunma University
Kiryu-shi, Gunma 376-8515, Japan
Springer Science+ Business Media, LLC

Library of Congress Cataloging-in-Publication Data
Adachi, Sadao, 1950-

0ptical constants of crystalline and amorphous semiconductors :
Numeric dat and graphical information I by Sadao Adachi
p. em.
Includes bibliographical references.
ISBN 978-0-7923-8567-7 ISBN 978-1-4615-5247-5 (eBook)
DOl 10.1007/978-1-4615-5247-5
1. Semiconductors--Optical properties. I. Title
QC611.6.06A3 1999
537.6'226--dc21 99-23736
CIP
Copyright© 1999 by Springer Science+ Business Media New York
Originally published by Kluwer Academic Publishers in 1999
Softcover reprint of the hardcover 1st edition 1999
All rights reserved. No part of this publication may be reproduced, stored in a

retrieval system or transmitted in any form or by any means, mechanical, photo-
copying, recording, or otherwise, without the prior written permission of the
publisher, Springer Science+Business Media., LLC.
Printed on acid-free paper.

To
YUki, Mai, and Koya

CONTENTS
Preface xiii
Acknowledgments xv
Contents of the Companion Book xvii
Abbreviations and Acronyms xix
Introductory Remarks 1
References, 3
A Group-VI Semiconductors 5
Al Diamond (C), 5
References, 12
A2 Silicon (Si), 18
References, 24
A3 Germanium (Ge), 33
References, 39
A4 Gray Tin (a-Sn), 49
References, 54
AS Cubic Silicon Carbide (3C-SiC), 63
References, 66
A6 Hexagonal Silicon Carbide (2H-, 4H-, and 6H-SiC), 73
References, 81
A7 Rhombohedral Silicon Carbide (15R-SiC), 91
References, 93
A8 Silicon-Germanium Alloy (SixGe,_j, 94
References, 98
A9 Carbon-Incorporated Alloys (Si,_xCx, Si'_x_yGexCy, etc.), 113
References, 116
viii CONTENTS
B llI-V Binary Semiconductors 119

Bl Cubic Boron Nitride (c-BN), 119
References, 121
B2 Hexagonal Boron Nitride (h-BN), 127
References, 129
B3 Boron Phosphide (BP), 137
References, 139
B4 Boron Arsenide (BAs), 141
References, 142
B5 Aluminium Nitride (AlN), 143
References, 147
B6 Aluminium Phosphide (AlP), 152
References, 153
B7 Aluminium Arsenide (AlAs), 156
References, 160
B8 Aluminium Antimonide (AlSb), 166
References, 169
B9 Wurtzite Gallium Nitride (a-GaN), 175
References, 179
BlO Cubic Gallium Nitride (~-GaN), 188
References, 190
B11 Gallium Phosphide (GaP), 198
References, 203
B12 Gallium Arsenide (GaAs), 213
References, 216
B13 Gallium Antimonide (GaSb), 227
References, 231
B14 Indium Nitride (InN), 238
References, 240
B15 Indium Phosphide (InP), 245
References, 249
B16 Indium Arsenide (InAs), 257
References, 261
B17 Indium Antimonide (InSh), 268
References, 271
C Ill-V Alloy Semiconductors 279

Cl General Remarks, 279
I Summary of Interpolation Scheme, 279
II Quaternary System and Band-GaP Energy, 281
III Refractive Index, 282
References, 286
CONTENTS ix
C2 Ternary Alloys, 287

I AlxGal_~' 287
II Ga)nl_~' 292
III AlxGal_»,294
IV Al)nl_»' 296
V Ga)nl_»,297
VI AlxGal~s, 300
VII Al)nl_..As, 328
VIII Ga)nl_..As, 330
IX AlxGal_xSb, 332
X Ga)nl_xSb, 336
XI GaN»l_x and GaN..ASl_x, 340
XII GaP..Asl-x, 342
XIII lnAsxSb l_x, 344
C3 Quaternary Alloys, 347
I AlxGalY,ASl_y, 347
II AlxGal_..ASySb l_y, 349
III AlxGal_»ySb l_y, 352
IV Ga)nl_»,Asl-y, 355
V Ga)nl_ASbl_y, 368
VI Ga)nl_»ySb l_y, 371
VII Al)nl_»,ASl-y, 374
VIII Al)nl_..AsySbl_y' 376
IX Al)nl_»ySb l_y, 379
X AlxGa,Inl-x-,P' 381
XI AlxGa,Inl-x-,As, 398
XII AlPASbl-x_)" 405
XIII GaP..AsySbl_x-y, 407
XIV InP..ASySbl_x_y, 409
D ll-VI Semiconductors 411

01 Magnesium Oxide (MgO), 411
References, 414
02 Zinc Oxide (ZnO), 420
References, 424
03 Wurtzite Zinc Sulphide (a-ZnS), 431
References, 434
D4 Cubic Zinc Sulphide (p-ZnS), 445
References, 450
05 Zinc Selenide (ZnSe), 459
References, 463
06 Zinc Telluride (ZnTe), 473
References, 477
x CONTENTS
D7 Cubic Cadmium Sulphide (c-CdS), 487

References, 490
D8 Wurtzite Cadmium Sulphide (w-CdS), 497
References, 499
D9 Cubic Cadmium Selenide (c-CdSe), 510
References, 512
DlO Wurtzite Cadmium Selenide (w-CdSe), 517
References, 520
Dll Cadmium Telluride (CdTe), 530
References, 534
D12 Mercury Selenide (HgSe), 546
References, 548
D13 Mercury Telluride (HgTe), 553
References, 555
D14 Magnesium Cadmium Telluride (MgxCd1_xTe), 559
References, 561
D15 Zinc Cadmium Selenide (ZnxCd1_xSe), 563
References, 566
D16 Zinc Cadmium Telluride (ZnxCd1_xTe), 567
References, 569
D17 Zinc Sulpho-Selenide (ZnSxSel_x), 571
References, 573
D18 Zinc Seleno-Telluride (ZnSexTe1_), 575
References, 577
D19 Cadmium Sulpho-Selenide (CdSxSe1_), 579
References, 581
D20 Mercury Zinc Telluride (Hgl_xZo.,Te), 582
References, 583
D21 Mercury Cadmium Selenide (Hgl_xCdxSe), 585
References, 585
D22 Mercury Cadmium Telluride (Hg1_xCdxTe), 588
References, 592
D23 Zinc-Based Semimagnetic Ternary Alloys (Znl_~S, Znl_~xSe,
etc.),594
References, 600
D24 Cadmium-Based Semimagnetic Ternary Alloys (Cdl_~Se, Cdl_~xTe,
etc.), 602
References, 607
D25 Quaternary Alloys (Znl_~gxSySel_y and MgxZIlyCd1_x_ySe), 609
References, 611
CONTENTS xi
E IV-VI Semiconductors 613

El Lead Sulphide (PbS), 613
References, 616
E2 Lead Selenide (PbSe), 622
References, 625
E3 Lead Telluride (PbTe), 631
References, 634
E4 Tin Telluride (SnTe), 641
References, 644
E5 Lead Tin Selenide (Pb1_xSnxSe), 649
References, 650
E6 Lead Tin Telluride (Pb1_xSn..,Te), 652
References, 656
F Amorphous Semiconductors 659

Fl a-Diamond-Like Carbon (a-DLC), 659
References, 661
F2 a-Silicon (a-Si), 663
References, 670
F3 a-Germanium (a-Ge), 673
References, 679
F4 a-Silicon-Carbon (a-Si1_xCx), 681
References, 685
F5 a-Gallium Phosphide (a-GaP), 687
References, 688
F6 a-Gallium Arsenide (a-GaAs), 692
References, 693
F7 a-Gallium Antimonide (a-GaSb), 698
References, 699
F8 a-Indium Phosphide (a-InP), 703
References, 704
F9 a-Indium Arsenide (a-InAs), 707
References, 707
FlO a-Indium Antimonide (a-InSb), 711
References, 712
PREFACE
Knowledge of the refractive indices and absorption coefficients of semiconductors is

especially import in the design and analysis of optical and optoelectronic devices.
The determination of the optical constants of semiconductors at energies beyond the
fundamental absorption edge is also known to be a powerful way of studying the
electronic energy-band structures of the semiconductors.
The purpose of this book is to give tabulated values and graphical information on
the optical constants of the most popular semiconductors over the entire spectral
range.
This book presents data on the optical constants of crystalline and amorphous
semiconductors. A complete set of the optical constants are presented in this book.
They are: the complex dielectric constant (E=e.+ieJ, complex refractive index
(n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The
semiconductor materials considered in this book are the group-IV elemental and
binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys.
The reader will fmd the companion book "Optical Properties of Crystalline and
Amorphous Semiconductors: Materials and Fundamental Principles" useful since it
emphasizes the basic material properties and fundamental prinCiples.
The extensive bibliography is included for those who wish to fmd additional infor-
mation if required. It is hoped that the book will attract attention of not only device
engineers, but also solid-state physicists and material scientists, and particularly
students specializing in the fields of semiconductor physics and device engineering.
ACKNOWLEDGMENTS
The author wishes to thank the editors and authors of the following journals and
books for permission to reproduce previously published figures; Physical Review for
Figs. AI-I, AI-5, A3-1, A3-4, A4-1, A4-2, A6-1, A6-2, A8-1, A8-3, Bl-l, B2-1,
B3-1, B3-2(a), B4-1, B1O-1, Bll-l, B13-1, BI4-1, BI5-1, C2-V-2, C2-VI-l,
C2-IX-l, C2-X-l, C3-IV-2, C3-IV-3, 01-1, 02-1, 03-1, 04-3, 05-1, 05-2, 06-1,
07-1, 07-2, 09-1, 010-1, 011-1, 015-1, 019-3, 021-1, 022-4, 023-1, 023-2,
023-5, 024-1, 024-4, El-l, E2-1, E3-1, E4-1, F2-4, F2-5, and F3-4; Journal of
Applied Physics for Figs. A9-2, C2-I-l, C2-1-2, C2-III-l, C2-VI-2, C2-VII-l,
C2-X-2, C2-XIII-l, C3-II-l, C3-II-2, C3-IV-l, C3-IV-4, C3-V-l, C3-V-2, C3-X-l,
C3-X-2, C3-X-4, C3-X-6, C3-XI-2, C3-XI-3, C3-XIV-l, C3-XIV-2, 08-1, 014-1,
015-2, 015-3, 017-2, 017-3, 022-1, 023-6, 025-2, E6-4, F3-5, and F4-3; Solid
State Communications for Figs. B5-1 and 018-1; Physica Status Solidi for Figs.
B9-1, C2-V-l, 012-1, 019-2, 021-2, and 022-3; Journal de Physique for Fig.
020-2; Applied Physics Letters for Figs. A2-2, A9-3, B5-2, C2-1-3, C2-Xl-1,
014-3, and 024-3; Japanese Journal of Applied Physics for Figs. C2-II-l, C2-X-3,
C2-X-4, 02-2, 04-2, 016-2, 016-3, 017-1, 018-2, and 018-3; Soviet Physics
Semiconductors for Fig. 019-1; Journal of Physics: Condensed Matters for Figs.
C2-IX-2, 023-3, 023-7, and 024-2; Journal of Crystal Growth for Fig. 05-3;
Journal of Physics and Chemistry of Solids for Figs. A4-3, B6-1, B7-1, B8-1, and
04-1; Chemistry and Physics of Carbon for Figs. AI-2 and AI-3; Journal of the
Optical Society of America for Figs. AI-4, A6-3, and A6-4; Proceedings of the
Physical Society for Figs. A2-1 and A3-2; University of South Carolina Press for
Fig. A5-I; Proceedings of the Royal Society for Figs. A7-1 and A7-2; Optical
Materials for Fig. A8-4; Journal of Vacuum Science & Technology for Fig. A9-1;
Materials Research Society Symposium for Figs. A9-4 and C2-IX-3; RCA Review
for Fig. B3-2(b); Physical Review Letters for Figs. B3-3 and E6-1; Materials
Science & Engineering for Fig. B13-2; Thin Solid Films for Fig. C2-1-4; Crystal
Research and Technology for Fig. C2-XIII-2; Institute of Conference Series for Fig.
C3-XI-l; Physica Scripta for Fig. 01-2; Semiconductor Science and Technology for
Figs. 06-2, 014-2, 023-4, and 025-1; W. A. Benjamin, Inc. for Fig. 011-2;
Progress in Quantum Electronics for Fig. D20-1; Infrared Physics for Figs. D22-2,
E6-2, and E6-3; International Journal of Infrared and Millimeter Waves for Figs.
ES-1 and ES-2; Journal of Non-Crystalline Solids for Fig. F4-1; and Philosophical
Magazine for Fig. F4-2.
xvi
CONTENTS OF THE COMPANION BOOK
OPTICAL PROPERTIES OF CRYSTALLINE AND AMORPHOUS

SEMICONDUCTORS:
Materials and Fundamental Principles
Sadao Adachi, Author
Chapter 1 Materials, Properties, and Basic Formulas

Chapter 2 The Reststrahlen Region
Chapter 3 The Interband Transition Region: Crystalline Materials
Chapter 4 The Interband Transition Region: Amorphous and
Microcrystalline Materials
Chapter 5 At or Below the Fundamental Absorption Edge
Chapter 6 Concluding Remarks
ABBREVIATIONS AND ACRONYMS
a- - amorphous-
AFM - Atomic Force Microscopy
BZ - Brillouin Zone
c- - crystalline-
c- - cubic-
CP - Critical Point
CPA - Coherent-Potential Approximation
CVD - Chemical-Vapor Deposition
DFI' - Density-Functional Theory

DHO - Damped Harmonic Oscillator
DOS - Density of States
DP - Deformation Potential
EMA - Effective-Mass Approximation

EMA - Effective-Medium Approximation
ENPM - Empirical Nonlocal Pseudopotential Method
EPM - Empirical Pseudopotential Method
ER - Electroreflectance
ETBT - Empirical Tight-Binding Theory
fcc - face-centered cubic
h- - hexagonal-
Iffi - Heavy-Hole
HOA - Harmonic Oscillator Approximation
HREELS - High-Resolution Electron-Energy Loss Spectroscopy
IR - Infrared
KK - Kramers-Kronig
KSM - Koster-Slater Method
LA - Longitudinal Acoustic
LCAO - Linear Combination of Atomic Orbitals
LDA - Local-Density Approximation
xx ABBREVIATIONS AND ACRONYMS
LEED - Low-Energy Electron Diffraction

LH - Light-Hole
LMTO - Linear Muffin-Tin Orbitals
LO - Longitudinal Optical
LPE - Liquid-Phase Epitaxy
LRA - Linear Regression Analysis
MBE - Molecular Beam Epitaxy
MDF - Model Dielectric Function
MOCVD - Metalorganic Chemical Vapor Deposition
MOVPE - Metalorganic Vapor Phase Epitaxy
PL - Photoluminescence
PR - Photoreflectance
RCA - Radio Corporation of America
rf - radio frequency
rms - root mean square
RS - Raman Scattering
SCP - Standard Critical Point
SC1(2) - Standard Cleaning 1(2)
SE - Spectroscopic Ellipsometry
SO - Spin-Orbit
STM - Scanning Tunneling Microscopy
TA - Transverse Acoustic
TO - Transverse Optical
UHV - Ultrahigh Vacuum
UV - Ultraviolet
VCA - Virtual-Crystal Approximation
VLSI - Very-Large-Scale Integration
w- - wurtzite-
XPS - X-Ray Photoelectron Spectroscopy
}tc- - microcrystalline-
ID - One-Dimensional
2D - Two-Dimensional
3D - Three-Dimensional
INTRODUCTORY REMARKS
This book contains optical-constant data of crystalline and amorphous semiconduc-

tors. The semiconductor materials examined are the group-IV elemental and binary
(Diamond, Si, SiC, etc.), III-V (AlP, GaAs, InSb, etc.), II-VI (MgO, ZnSe, CdTe,
etc.), and IV-VI binary semiconductors (PbS, PbSe, SnTe, etc.), and their alloys.
The optical constants considered in this book are the complex dielectric constant
(E=e1+i~), complex refractive index (n*=n+ik), absorption coefficient (a.), and nor-
mal-incidence reflectivity (R). They have the relationships
= e, 8 2 =2nk
+sr
81 n2 - (1)
.~[(s:+sr
-·r
(2)
k=[(.~+.~r (3)
(4)
(5)
The optical constants have been discussed starting in the reststrahlen region and
working to higher photon energies. We have used photon energy E in electron volts.
2 ThITRODUCTORYREMARKS
Optical data are, however, often presented in terms of wavelength A. in micrometers

or wave number k in reciprocal centimeters. It is useful to know how to convert the-
se units easily in the manner:
'). =:.. =he =1.2398 !UIl (6)
v hv E
k =21t = 21thv = E cm-1 (7)

').. he 1.2398 X 10-4
where E is in eV. In Eqs. (6) and (7), h is Planck's constant and e and v are, respec-
tively, the velocity and frequency oflight in the vacuum.
For almost every optical constant given in this book, different sources give
somewhat different values. Often, these differences are larger than the stated accu-
racy. In such cases, we chose and list the values which we believe to be more reli-
able.
The optical spectra in the reststrahlen region of semiconductors have been popu-
larly analyzed by a classical oscillator fit. In most cases, therefore, we have calculat-
ed the optical constants in this spectral region using the reststrahlen parameters re-
ported in the original references. It must be noted that the damping parameter in an
oscillator expression, 'Y in Eq. (2.7), strongly influences the calculated values of £1
and ~ at their maxima.
For frequencies above or below roTQ, the absorption spectrum has considerable
structure and values much higher than those predicted from a simple oscillator
model, Eq. (2.7). Since the same bands are observed in compensated and uncompen-
sated samples, they are attributed to absorption by the lattice, i.e., multiphonon
bands. However, the absorption spectra from different labs are usually in qualitative
but not in quantitative agreement. Thus, we have paid no much attention on these
absorption bands in most semiconductors.
The optical constants in the interband transition region of solids can be deter-
mined by KK analysis of normal-incidence reflectance data [1]. This procedure
evaluates the real and imaginary parts of the dielectric function which describe these
properties. More recently, SE has been shown to be an advantageous techriique to
study the optical response of solids. This technique is unquestionably more powerful
for a number of reasons [2]. For example, the complex dielectric function can be
obtained directly on a wavelength-by-wavelength basis without having to resort to
multiple measurement or to KK analysis. On-line digitization of the data permits fast
and efficient analysis of the structures observed in the £(E) spectra in terms of theo-
reticalline shapes for interband CPs. The experimental SE data have been preferen-
tially chosen in this book.
It is well known that the optical constants of solids are strongly influenced by
their surface quality (see, e.g., Ref. [3]). We, therefore, used a simple criterion for
evaluating the "best-prepared" surfaces and, thus, for choosing the accurate values
INTRODUcrORY REMARKS 3
of the optical constants among the original references, here the "best-prepared" sur-
faces mean those most free of roughness, unintentional overlayers, and physisorbed
contaminants. This criterion is well known as "biggest is best" one [4,5]. When SE
is used, it can be applied as the sample is being prepared, so spectral measurements
can be restricted only to surfaces of the highest quality [3].
In most instances, the optical-constant data have been taken from tables and
graphs in the original references. Graphs that are too small to read have been ex-
panded. These procedures produce all sorts of eyestrain problem. Therefore, some of
these numbers may have an uncertainty larger than the experimental error quoted in
the original work.
REFERENCES
1. See, for instance, H. R. Philipp and H. Ehrenreich, Phys. Rev. 129, 1550
(1963).
2. D. E. Aspnes, in Handbook of Optical Constants of Solids, edited by E. D.
Palik (Academic, Orlando, 1985), p. 89.
3. K. Sato and S. Adachi, J. Appl. Phys. 73,926 (1993).
4. D. E. Aspnes, J. Vac. Sci. Technol. 17, 1057 (1980).
5. D. E. Aspnes and A. A. Studna, Appl. Phys. Lett. 39, 316 (1981).
A
GRouP~IV SEMICONDUCTORS
A1 DIAMOND
(C)
Al.l GENERAL REMARKS

Diamond is one of the simplest and most important systems in condensed matter. It
has considerable mechanical strength; also it has extremely high thermal conductiv-
ity and chemical stability even at several hundreds of degrees Celsius. The recent
success in depositing diamond films on nondiamond substrates by a chemical trans-
port method or other methods [1] has revived the interest in the material properties
[2] and potential applications in electronics and optics [3]. Of course, there is the
important, yet trivial, application of diamond in jewelry, exploiting its high refrac-
tive index.
6 GROUP-IV SEMICONDUCTORS
Al.2 ELECTRONIC ENEGY·BAND STRUCTURE

Diamond has, perhaps, the simplest and most basic covalent band structure. Figure
AI-l shows the electronic energy-band structure of diamond along several lines of
high symmetry from the center (0 to the boundary of the fIrst BZ as calculated with
a modifIed LCAO method by Chelikowsky and Louie [4]. The electronic states are
labeled using the notation for the representations of the single group of the diamond
structure. The locations of several interband transitions are included by the vertical
arrows. Table Al-l summarizes the CP energies and indirect-band-gap energy in
diamond [5].
The fundamental absorption edge of diamond corresponds to indirect transitions
from the highest valence band at the r point to the lowest conduction band in the .:1
direction (X point) [Le., r 2S ' -? .:11 ( XI )]. The theoretical indirect gap energy EgID is
5.05 eV [4] or 5.6 eV [6], in reasonable agreement with the experimental data
(EglD=5.470±O.005 eV [7] and 5.50±O.05 eV [8]). Like in Si, the lowest-lying con-
duction band at r in diamond, r ls is p-like; however, in Ge and (X-Sn the s-like r 2 •
band is the lowest conduction band. As mentioned in Ref. [5], one common charac-
r, r,
L A r A X U,K r
Wave vector k
Figure At·t Electronic energy-band structure of diamond along several lines of high sym-
metry from the center (r) to the boundary of the first BZ as calculated with a modified
LCAO method. (From Chelikowsky and Louie [4].) The locations of several interband tran-
sitions are included by the vertical arrows.
TABLE At·t Energies o/the indirect band gap (E gID) and CPs in
diamond at 300 K (in eV).
Eo'
5.5 7.1 11.7
Al DIAMOND (C) 7
teristic of all published reflectance spectra in the UV region of diamond is the

presence of two major peaks at -7.02-7.4 eV and -12.2-12.7 eV. The fIrst peak
may originate from r 2S ' ~ rlS transitions (Eo') and the second one from X,. ~ Xl
and ~ ~ ~ transitions (E2 ).
The positions of the El and E l ' are rather uncertain. Some reflectance data show a
broad peak at around 9.2 eV which, however, has not been always confirmed by
other researchers [5]. On the other hand, the band-structure calculation [4] places the
El gap at 12.05 eV (~, ~ ~ transitions) and E2 gap at 12.18 eV (X,. ~ Xl transi-
tions). Such very close energies might explain the absence of any El (or E2) peak
from the reflectance spectrum. The band-structure calculation also suggests the Eo
gap (r25' ~ r 2·) at 13.41 eV and E2 ' gap (x.. x..)
~ at 23.04 eV [4]. Experimentally,
the reflectance peaks have been observed at around 16 and 24 eV [5]. The 16-eV
peak was assigned to the r 25' ~ r 2, (Eo) [8] or Xl ~ Xl transitions [9] and the 24-eV
peak to the r 2S ' ~ r l transitions [8,9].
AI.3 OPTICAL CONSTANTS

The temperature and pressure variations of the refractive index (n2-eJ for a diamond
(type IIa) at audio frequencies 102-104 Hz have been measured using capacitance
technique by Fontanella et al. [10]. The dielectric constant over the 220-340-K tem-
perature range obtained by them is given by
£.(T) = 5.70111 - 5.35167x10,sT + 1.6603x10"T 2 (ALl)
This expression gives the 300-K value of £.=5.70. The pressure derivative of the di-
electric constant is also given by
~(de.) =-O.72x10- l2 /Pa (A 1.2)

£. dp T
The optical properties of diamond are now known, to a large extent, for photon
energies covering four orders of magnitude, from 30 meV to 610 eV
[2,5,7-9,11-20]. About sixty years ago, Robertson, Fox, and Martin [21] reported
striking differences in the optical and phtotoconductive properties of natural dia-
monds. They classifIed diamonds into types I and II according to their different IR
and UV absorption properties.
Figures Al-2 and Al-3 show, respectively, the IR and visible-UV absorption
spectra measured for diamonds [14]. Type-I (type-Ia) diamonds absorb light at three
distinct bands around 0.15, 0.25, and 0.4 eV (Fig. AI-2) with a secondary absorption
edge around 4 eV (Fig. Al-3). Most natural diamonds are of type I, and nitrogen
impurities are known to be mainly responsible for the type-I characteristics [14].
Type-I diamonds can be further subdivided into types la and lb. Type-Ib diamonds
contain nitrogen as an impurity in dispersed form (single substitutional N atoms).
Only about 0.1 % of natural diamond is of this type, but the great majority of nitro-
t~__~O~.1____~__~O~2~__- r__~OT·3~__- r__~O~A~__- r__~ev
2 4
Wavenrnber ("(l3an·1)
Figure Al-2 IR absorption spectrum of type-Ia diamond. The absorption at wave numbers
greater than -1400 cm-! is observed in all diamonds with the same strength. The absorption
below -1400 cm'! is specimen dependent. (From Davies [14].)
1.
O.
O. 1.2
Log10 Ioftt OII--_ _ _la_A_ _ _ _ _ ____
Q8
O.1-_ _ -==--__-==::::::J.---
lIa
Ol~------------------
lib
1.5
Figure Al·3 Visible-UV absorption spectra for type-I and II diamonds at room temperature.
Type-Ia (-laB) diamond is shown before and after thinning by a factor of ten. A type-lIb
diamond may show decreasing absorption from the red to the blue spectral range. (From
Davies [14].)
gen bearing synthetic diamond are type lb. The O.15-eV band is much stronger in
type Ib than in type Ia.
In type-II diamond the O.15-eV band is absent [14]. Moreover. the absorption
edge in type II occurs near 5 e V as compared to 4 e V in type I. Type-II diamonds
can also be subdivided into types IIa and lIb. Type-lIb diamond. called semicon-
ducting diamond, shows p-type conductivity and phosphorescence effects in the far
At DIAMOND (C) 9
UV that are not observed in type IIa. Type-lla diamonds are considered to be most
pure and, thus, to best represent the ideal diamond crystal.
The translational symmetry of the perfect diamond lattice forbids single phonon
absorption of radiation because of a lack of a linear electric moment. Consequently,
the lattice absorption band is probably due to the multiple-phonon processes which
allow a higher-order electric moment to be induced, providing the coupling to the
radiation field. Qualitatively [14], we can think of one phonon being required to
break the translational symmetry of the crystal, permitting local fluctuations in the
changes on each atom. Radiation can then couple to these instantaneous dipoles and
so can be adsorbed with the creation of a second phonon. In diamond, this intrinsic
absorption lies predominantly above 0.17 e V (> 1400 cm- I ) and occurs both in types I
and II.
Impurities can change dipole-transition selection rules by destroying the trans-
lational symmetry of the crystal and creating local static dipoles. The 0.15-eV band
seen in Fig. AI-2 arises from this absorption mechanism. This absorption band is
specimen dependent both in strength and shape and observed only in type-I dia-
monds. Furthermore, types I and II diamonds are known to show different behaviors
in photoconductivity and luminescence [14].
The refractive index of type-lla diamond in the visible region has been discussed
by Edwards and Ochoa [15]. In Fig. AI-4 we reproduce the refractive-index values
for the visible region collected from the literature [15]. It should be noted that the
only value obtained by Bartoshinskii (3) at A.=0.5358 J.Ull is not consistent with the
other data; either it is in error or the sample is anomalous.
Edwards and Ochoa [15] measured the refractive index of natural type-lla dia-
mond in the IR region (2.5-25 Ilm) using a channel spectrum technique. They ob-
tained the refractive-index dispersion that can be represented by the Herzberger-type
dispersion formula (A in Ilm)
n =A+BL+CL2 +D1..2 +EA4 (A1.3)
with
L= 1 (AlA)
1..2 -0.028
where A=2.37837, B=1.18897xlO- 2 , C=-1.0083xI0- 4 , D=-2.3676xI0- s, and

E=3.24263 xlO-s [17]. The solid line in Fig. AI-4 shows a least-squares fit of this
dispersion formula to the data. Peter [11] also determined the refractive index of
type-lla diamond in the visible-UV region (0.643-0.226 !lm) using a small diamond
prism. The data determined agree with those calculated from Eq. (A1.3) to 0.003 at
0.643 Ilm and to 0.012 at 0.226 Ilm (see Ref. [17]). The long-wavelength (1..=25 Ilm)
Z 2.7
o
~
ILl
II: 2.6
15 Figure Al·4 Refractive-index values
for type-lla diamond collected from
~ the literature. The solid line repre-
~
2.5
sents a fit of these data to the Her-
zberger-type dispersion formula of Eq.
(A1.3). (From Edwards and Ochoa
[15].)
refractive index obtained by Edwards and Ochoa [15] is 2.375. This value is about
0.01 smaller than that determined using the audio-frequency capacitance technique
by Fontanella et at. (n=2.387) [10]. The characteristic absorption band in the IR re-
gion of type-lla diamond is too weak to have a noticeable effect on the refractive
index.
In the UV region (S35 eV), Roberts and Walker [9,12] and Philipp and Taft [13]
performed reflectance measurements combined with the KK dispersion analysis to
determine the dielectric response function of type-I diamonds. These data revealed
CP features at -7 eV (Eo') and -12 eV (E;J, together with an indirect absorption
edge at -5 eV (EgID) [13]. The only difference in the dielectric response functions of
these two reports is relatively small difference in the magnitude of such CPs. Rob-
erts and Walker [9] also carried out reflectance measurements on type-lla diamond
and found that the CP strengths are slightly weaker than in type I. In principle, no
large difference can be expected in optical properties of the interband transition re-
gion between type-I and IIa diamonds. The impurities, or more generally, the lattice
defects in semiconductors, will reduce the lifetime of the excited electronic states,
resulting in a change in optical properties. The optical dielectric function may thus
be affected by the lifetime broadening of the electronic states, especially at photon
energies close to the CP structure. Temperature also causes a change in optical prop-
erties of solids. Roberts and Walker [9] obtained reflectance spectra at room tem-
perature and also at low temperature (77 K). Unfortunately, however, they did not
state whether their reported results were for room temperature or 77 K.
Reflectance spectrum of a type-Ia diamond in the soft X-ray (200-610-eV) region
was measured by Nithianandam and Rife [20]. They combined their measured X-ray
reflectance spectrum with an earlier UV optical spectrum (Ref. [13]) and performed
extrapolation to these reflectance spectra using a model dielectric function com-
posed of a set of Lorentz oscillators. The reflectance extrapolation made at high en-
Al DIAMOND (C) 11
ergies with these Lorentz oscillators provided the correct ~ dependence for reflec-
tance. A Fortran program using a fast Fourier transform algorithm was developed to
evaluate the KK integration. The resultant n(E) and k(E) spectra in the 200-800-eV
region are shown in Figs. AI-5 (a) and (b), respectively. It should be noted that the
fine structures near E-300 eV are due to the carbon Kedge.
The room-temperature values of £=£I+i~, n*=n+ik, a, and R for diamond listed in
Table AI-2 were taken from the following works: Edwards and Ochoa [15] (see also
Ref. [17]) for the transparent region (~5 eV), Philipp and Taft [13] for the interband
transition region (5<E~35 eV), and Nithianandam and Rife [20] for the UV-soft X-
ray region (40-800 e V). Since the strength of the IR absorption band is very weak in
diamond, we neglected this contribution in the tabulation work. The nand £1 values
for E~5 eV were obtained from the Herzberger-type formula [Eq. (Al-3)]. The val-
ues of ~ just above the fundamental absorption edge were obtained from the ab-
sorption coefficient a(t..) of Philipp and Taft [13], using the relation [5]
(A 1.5)
The optical constants for 40~E~190 eV were obtained from a set of the Lorentz os-
cillators [20].
The (£1' ~), (n, k), a, and R values in Table AI-2 are plotted in Figs. AI-6-Al-9,
respectively. The vertical arrows in the figures indicate the positions of each CP (Eo'
and E2 ) and Eg ID gap.
0.012
0.008 -1 , 0.012
;\
>-
z
'"(3
...i:::
g
C 0,004-
8'" 0.008
75 150
1 Z
0
i=
u
z
i=
x
0.000 '" 0.00<4-
(a) (b)
-0.00<4- 0.000
200 JOO 400 500 600 700 600 200 JOO 400 500 600 700 600
PHOTON ENERGY (eV) PHOTON ENERGY (eV)
Figure Al-5 Variations of (a) l-n and (b) extinction coefficient k for type-Ia diamond
measured at 300 K. The insets show those below the diamond Is core threshold. (From Ni-
thianandam and Rife [20].)
REFERENCES
1. R. Messier and W. Yarbrough, Phys. Today 42, S-65 (1989).
2. D. T. Morelli and C. Uher, Appl. Phys. Lett. 63,165 (1993).
3. M. W. Geis, Proc. IEEE 79,669 (1991).
4. J. R. Chelikowsky and S. G. Louie, Phys. Rev. B 29, 3470 (1984).
5. A. D. Papadopoulos and E. Anastassakis, Phys. Rev. B 43,5090 (1991).
6. M. S. Hybertsen and S. G. Louie, Phys. Rev. B 34,5390 (1986).
7. C. D. Clark, P. J. Dean, and P. V. Harris, Proc. Roy. Soc. London A 277,312
(1964).
8. F.1. Himpsel, J. F. van der Veen, and D. E. Eastman, Phys. Rev. B 22, 1967
(1980).
9. R. A. Roberts and W. C. Walker, Phys. Rev. 161, 730 (1967).
to. J. Fontanella, R. L. Johnston, J. H. Colwell, and C. Andeen, Appl. Opt. 16,
2949 (1977).
11. F. Peter, Z. Phys. 15,358 (1923).
12. W. C. Walker and J. Osantowski, Phys. Rev. 134, A153 (1964).
13. H. R. Philipp and E. A. Taft, Phys. Rev. 136, A1445 (1964).
14. G. Davies, Chern. Phys. Carbon 13, 1 (1977).
15 D. F. Edwards and E. Ochoa, J. Opt. Soc. Am. 71, 607 (1981).
16. H. Armon and J. P. F. Sellschop, Phys. Rev. B 26, 3289 (1982).
17. D. F. Edwards and H. R. Philipp, in Handbook of Optical Constants of Solids,
edited by E. D. Palik (Academic, Orlando, 1985), p. 665.
18. D. L. Windt, W. C. Cash, Jr., M. Scott, P. Arendt, B. Newnam, R. F. Fisher, A.
B. Swartzlander, P. Z. Takacs, and J. M. Pinneo, Appl. Opt. 27, 279(1988).
19. A. T. Collins, S. C. Lawson, G. Davies, and H. Kanda, Phys. Rev. Lett. 65,891
(1990).
20. J. Nithianandam and J. C. Rife, Phys. Rev. B 47, 3517 (1993).
21. R. Robertson, J. J. Fox, and A. E. Martin, Phil. Trans. Roy. Soc. London A 232,
463 (1934); Proc. Roy. Soc. London A 157, 579 (1936).
At DIAMOND (C) 13
25~~~~--,-~-r~-'
20
Diamond
-10
0~~~1~0~~20~~3~0~~4·0
Photon energy (eV)
Figure AI-6 £1(E) and £2(E) spectra for diamond at 300 K.
4
!E2
3
Diamond
..lI::
2
c:
o 10 20 30
Photon energy (e V)
Figure AI-7 n(E) and k(E) spectra for diamond at 300 K.
107 1E2
Eo'
106 t Kedge
'I
-
u
E 10 5
~
104
E ID
gl
Diamond
103
10 1 102 103
Photon energy (eV)
Figure Al·8 aCE) spectrum for diamond at 300 K.
0.5
0.4
a:
0.3
0.2
Diamond
0.1
o 10 20 30 40
Photon energy (eV)
Figure Al·9 R(E) spectrum for diamond at 300 K.
Al DIAMOND (C) 15
Table Al·2 Optical constants of diamond at 300 K.

eV £1 £2 n k (X (em·l ) R
0.25 5.656 2.378 0.166
0.5 5.665 2.380 0.167
0.75 5.677 2.383 0.167
1 5.694 2.386 0.168
1.25 5.715 2.391 0.168
1.5 5.742 2.396 0.169
1.75 5.774 2.403 0.170
2 5.813 2.411 0.171
2.25 5.857 2.420 0.172
2.5 5.909 2.431 0.174
2.75 5.968 2.443 0.176
3 6.035 2.457 0.178
3.25 6.112 2.472 0.180
.5 6.199 2.490 0.182
3.75 6.297 2.509 0.185
4 6.407 2.531 0.188
4.25 6.531 2.556 0.191
4.5 6.670 2.583 0.195
4.75 6.822 2.612 0.199
5 6.988 2.643 0.203
5.25 7.141 2.672 0.207
5.5 7.361 0.0044 2.713 0.00081 4.5213+02 0.213
5.75 7.606 0.019 2.758 0.0034 2.01E+03 0.219
6 7.899 0.032 2.811 0.0057 3.46E+03 0.226
6.25 8.242 0.042 2.871 0.0073 4~63E+03 0.234
6.5 8.755 0.053 2.959 0.0090 5.9OE+03 0.245
6.75 9.465 0.110 3.077 0.018 1.22E+04 0.259
7 10.32 0.580 3.214 0.090 6.40E+04 0.276
7.25 11.62 2.900 3.434 0.422 3.lOE+05 0.308
7.5 11.05 3.900 3.375 0.578 4.39E+05 0.307
7.75 10.52 4.353 3.309 0.658 5. 17E+05 0.303
8 10.15 4.671 3.265 0.715 5.80E+05 0.302
8.25 9.929 5.050 3.246 0.778 6.51E+05 0.303
8.5 9.795 5.258 3.234 0.813 7.01E+05 0.304
8.75 9.758 5.527 3.238 0.853 7.57E+05 0.307
9 9.770 5.943 3.256 0.913 8.33E+05 0.313
9.25 9.807 6.457 3.282 0.983 9.22E+05 0.320
9.5 9.929 7.068 3.325 1.063 1.02E+06 0.330
9.75 10.08 7.777 3.377 1.152 1.14E+06 0.341
10 10.20 8.743 3.437 1.272 1.29E+06 0.355
10.5 9.954 10.64 3.502 1.519 1.62E+06 0.379
11 8.560 13.33 3.493 1.908 2. 13E+06 0.414
11.5 4.647 16.88 3.328 2.535 2.96E+06 0.471
12 -2.201 18.37 2.855 3.217 3.91E+06 0.547
12.5 -8.511 13.70 1.951 3.510 4.45E+06 0.629
13 -6.236 7.337 1.302 2.817 3.71E+06 0.606
13.5 -4.696 5.136 1.064 2.414 3.30E+06 0.578
14 -3.791 4.561 1.034 2.205 3. 13E+06 0.540
14.5 -3.155 4.084 1.001 2.039 3.00E+06 0.509
15 -2.813 3.668 0.951 1.928 2.93E+06 0.494
Table Al·2 Continued (diamond).

eV el e2 n k a (cm· l ) R
15.5 -2.592 3.387 0.915 1.852 2.9IE+06 0.484
16 -2.446 2.996 0.843 1.777 2.88E+06 0.485
16.5 -2.250 2.702 0.796 1.698 2.84E+06 0.479
17 -2.103 2.433 0.746 1.631 2.81E+06 0.477
17.5 -1.944 2.189 0.701 1.561 2.77E+06 0.474
18 -1.773 1.954 0.658 1.485 2.71E+06 0.469
18.5 -1.639 1.749 0.616 1.420 2.66E+06 0.468
19 -1.480 1.590 0.588 1.351 2.60E+06 0.459
19.5 -1.345 1.443 0.560 1.288 2.55E+06 0.453
20 -1.223 1.321 0.537 1.229 2.49E+06 0.445
20.5 -1.064 1.186 0.515 1.153 2.40E+06 0.432
21 -0.929 1.027 0.477 1.076 2.29E+06 0.428
21.5 -0.714 0.922 0.475 0.970 2. 11E+06 0.390
22 -0.511 0.907 0.515 0.881 1.97E+06 0.329
22.5 -0.386 0.954 0.567 0.841 1.92E+06 0.283
23 -0.366 1.003 0.592 0.846 1.97E+06 0.271
23.5 -0.362 1.001 0.593 0.845 2.0 1E+06 0.270
24 -0.350 0.956 0.578 0.827 2.0 1E+06 0.272
24.5 -0.333 0.915 0.566 0.808 2.01E+06 0.271
25 -0.311 0.868 0.553 0.785 1.99E+06 0.270
25.5 -0.286 0.822 0.540 0.760 1.97E+06 0.268
26 -0.254 0.773 0.529 0.731 1.93E+06 0.263
26.5 -0.223 0.734 0.522 0.703 1.89E+06 0.257
27 -0.197 0.692 0.511 0.677 1.85E+06 0.254
27.5 -0.166 0.648 0.501 0.646 1.80E+06 0.249
28 -0.127 0.607 0.496 0.611 1.73E+06 0.240
28.5 -0.095 0.567 0.490 0.579 1.67E+06 0.233
29 -0.059 0.539 0.492 0.548 1.6IE+06 0.221
29.5 -0.023 0.510 0.494 0.517 1.54E+06 0.210
30 0.009 0.479 0.494 0.485 1.48E+06 0.199
30.5 0.037 0.448 0.493 0.454 1.40E+06 0.190
31 0.071 0.428 0.502 0.426 1.34E+06 0.176
31.5 0.098 0.399 0.504 0.395 1.26E+06 0.166
32 0.126 0.377 0.511 0.368 1.19E+06 0.155
32.5 0.164 0.361 0.529 0.341 1.l2E+06 0.138
33 0.188 0.342 0.538 0.318 1.06E+06 0.128
33.5 0.219 0.325 0.553 0.294 9.99E+05 0.115
34 0.244 0.313 0.566 0.276 9.53E+05 0.105
34.5 0.271 0.306 0.583 0.262 9. 17E+05 9.41E-02
35 0.293 0.293 0.595 0.247 8.75E+05 8.62E-02
40 0.644 0.146 0.808 0.091 3.67E+05 1.38E-02
50 0.758 0.088 0.872 0.050 2.55E+05 5.39E-03
60 0.824 0.056 0.908 0.G31 1.89E+05 2.57E-03
70 0.867 0.G38 0.931 0.020 1.45E+05 1.38E-03
80 0.896 0.027 0.946 0.014 1.l5E+05 8.09E-04
90 0.916 0.019 0.957 0.010 9.27E+04 5.05E-04
100 0.931 0.G15 0.965 0.0075 7.64E+04 3.3IE-04
110 0.943 0.011 0.971 0.0057 6.40E+04 2.26E-04
120 0.952 0.0087 0.976 0.0045 5.44E+04 1.59E-04
130 0.959 0.0069 0.979 0.0035 4.67E+04 1.15E-04
Al DIAMOND (C) 17
Table Al-2 Continued (diamond).

eV £1 £2 n k a (cm·1) R
140 0.964 0.0056 0.982 0.0029 4.06E+04 8,49E-05
150 0.969 0.0046 0.984 0.0023 3.56E+04 6,40E-05
160 0.973 0.0038 0.986 0.0019 3.1SE+04 4.90E-OS
170 0.976 0.0032 0.988 0.0016 2.81E+04 3.81E-05
180 0.979 0.0027 0.989 0.0014 2.53E+04 2.99E-OS
190 0.981 0.0024 0.990 0.0012 2.29E+04 2.38E-05
200 0.979 0.0028 0.989 0.0014 2.88E+04 2.89E-05
2S0 0.990 0.0010 0.995 0.0005 1.33E+04 6.61E-06
260 0.992 0.00088 0.996 0.0004 1.17E+04 3.70E-06
287 1.006 0.014 1.003 0.0072 2.lOE+OS 1.S3E-05
290 0.997 0.027 0.998 0.0137 4.02E+05 4.75E-05
294 0.989 0.014 0.994 0.0071 2. 12E+05 2.04E-05
297 0.990 0.016 0.995 0.0082 2,46E+05 2.32E-OS
299 0.987 0.015 0.994 0.007S 2.28E+05 2,45E-OS
301 0.986 0.008 0.993 0.0038 1.17E+05 1.69E-OS
304 0.992 0.013 0.996 0.0065 2.ooE+05 1.48E-05
306 0.989 0.016 0.995 0.0079 2,47E+OS 2.33E-OS
310 0.98S 0.0084 0.992 0.0042 1.32E+OS 1.96E-OS
314 0.989 0.00S9 0.994 0.0029 9.38E+04 1.0 1E-OS
322 0.991 0.0080 0.996 0.0040 1.31E+OS 9.07E-06
326 0.990 0.0091 0.995 0.0046 1.S1E+OS 1.17E-OS
331 0.989 0.0073 0.994 0.0037 1.24E+05 1.12E-OS
335 0.989 0.0064 0.995 0.0032 1.09E+05 9.72E-06
350 0.990 0.0066 0.995 0.0033 1.18E+05 8.60E-06
400 0.991 0.0041 0.996 0.0021 8.32E+04 6.1IE-06
450 0.993 0.0026 0.996 0.0013 S.86E+04 3.85E-06
SOO 0.994 0.0017 0.997 0.00084 4.27E+04 2.65E-06
550 0.995 0.0011 0.997 0.00056 3. llE+04 1.89E-06
600 0.995 0.00084 0.998 0.00042 2.S6E+04 1.37E-06
650 0.996 0.00074 0.998 0.00037 2,43E+04 9.88E-07
700 0.997 0.00059 0.998 0.00029 2.09E+04 7.30E-07
7S0 0.997 0.00053 0.999 0.00026 2.00E+04 5,41E-07
800 0.997 0.00042 0.999 0.00021 1.71E+04 4.06E-07
A2 SILICON
(SI)
A2.1 GENERAL REMARKS

Silicon (Si) is the second most common element in the upper layer of the earth's
crust (about 25% of the crust consists of Si, and only oxygen exceeds it in abun-
dance); however, this element is usually not found free, but mainly in its oxides and
silicates. The Czochralski method is commonly used to produce single crystals of Si
used for solid-state devices. Crystalline Si has a metaIIic luster and grayish color,
and transmits more than 95% of all wavelengths of infrared, from 1.3 to 6.7 J.Ill1.
Because of the pre-eminent position in VLSI circuit applications, Si-based devices
now constitute about 95% of all semiconductor devices sold worldwide [1,2]. Even
though some lIT-V compounds (such as OaAs and InOaAs) have certain advantages
in material properties over Si, this trend is unlikely to change during the next few
decades.
A2.2 ELECTRONIC ENERGY·BAND STRUCTURE

See discussion in Sec. 1.2.2 (a) in the companion book "Optical Properties ofCrys-
talline and Amorphous Semiconductors: Materials and Fuiulamental Principles."
A2.3 OPTICAL CONSTANTS
A microwave transmission interference method was used for the determination of
the dielectric constant of Si, OaAs, and quartz [3]. The dielectric constant of Si in
the 26.5-40-0Hz frequency range at room temperature obtained from this study was
1l.6±O.05. This is in fair agreement with the value of 11.7 for lower frequencies
(500 Hz-30 MHz, Ref. [4]) and with the IR value of 11.7 [5]. Note that the static
dielectric constant in diamond-type semiconductors is simply the square of the long-
wavelength refractive index [Le., £.=£_=n(A.~)2]. The temperature and pressure
dependence of the static dielectric constant for Si has been discussed by Samara [6].
Dispersive Fourier transform spectroscopy was used to determine the optical con-
stants, neE) and k(E), of high-purity Si in the region below 250 cm-! (-0.03 eV) [7,8].
These data showed free-carrier effects below 100 cm-! with n decreasing and k in-
creasing.
The lattice absorption bands in Si have been investigated by a number of investi-
gators [9-14]. In homopolar crystals like diamond, Si, Ge, and <x-Sn, the fundamen-
tal lattice vibration has no dipole moment and is, therefore, IR inactive. Conse-
18
A2 SILICON (Si) 19
quently, the lattice absorption bands observed in such crystals are probably due to
the multiple-phonon processes, not due to the one-phonon process. For Si, this type
of lattice absorption occurs predominantly in the spectral region between 500 and
1500 em-I.
Figure A2-1 shows, as an example, the optical absorption coefficient plotted
against wave number for Si measured at four different temperatures (20, 77, 290,
and 365 K) [Ill. The 20- and 77-K curves are almost identical, the only significant
difference being in the height of the two peaks at 560 and 610 cm·l • The most inten-
se peak seen in Fig. A2-1 is identified to as a summation band of TO and LO pho-
nons (610 cm· l ) and the second one to as a combination of LO and TA phonons (566
cm· l ) or that of LO and LA phonons (740 cm·l ) [Ill. More.recently, these multipho-
non bands have been identified to as TO(L)+TA(X) (610 cmol ), TO(X)+TA(L) (566
cmol ), and 2TA(X)+TO(X) (740 cmol ), respectively [14]. The 1040-1240-cmol spec-
tral region is found to be largely obscured by the residual impurity (oxygen) band,
but in the case of the 20-K curve this impurity band is fairly narrow and an estima-
tion of the shape of the absorption curve in the spectral region indicates that there
are probably unresolved absorption bands at 1030, 1080, 1160, and 1230 cmol , re-
12
'I LaW" Abscrption Sand,

E of Vacuum Grown Silicon
-
~
c::
·0
0)
9 I 3'5'.
2 290'.
1 77'.
4 ZO'K
.....
:;:::
0)
0
0 6
c::
0
:;::::;
c..
....
0
en
.0
<t 3
~~O~O=C~L-6~O~O~~~-9~OO--~~~12~O~O~~~1~5~O-O~~
Wave number (cm-1)
Figure A2·1 Optical absorption coefficient plotted against wave number for Si measured at
four different temperatures. Note that the 20- and 77-K curves are almost identical, the only
significant difference being in the height of the two peaks at 560 and 610 cmol • (From John-
son [11].)
spectively. Pradhan et al. [14] identified the 1160-cm-1 absorption band as a summa-
tion band of 2TO(r)+TA(L). Jichang et al. [15], on the other hand, suggested from
Fourier-transform IR measurements that the 1160-cm-1 band is due to interstitial
oxygen_
The absorption coefficient just at the 61O-cm-1 peak is -9.5 cm- I (290 K, Fig. A2-
1). From this a value, we obtain the following imaginary optical constants:
k-1.2xlO-3 and ~-8.5xlO-3. These values are too small to have a noticeable effect on
the real optical constants (e l [Eq. (U8a)], n [Eq. (U9a)], and R [Eq. (1.22)]).
The refractive-index dispersion in the transparent region of Si has been deter-
mined by a number of authors [16-18]. Li [19] has discussed the n dispersion and its
temperature dependence for Si in the ranges 1.2 to 14 ~m and 100-750 K. Edwards
[20] tried to fit the experimental n data from 1.12 ~m to 588 ~ to the Herzberger-
type dispersion formula of Eq. (A1.3). The quality of the fit was found to be good
with differences in the third and fourth decimal places. The Herzberger-type disper-
sion parameters determined from this fit were A=3.41906, B=1.23172xlO-1,
C=2.65456x10-2 , D=-2.66511xl0- 8 , andE=5.45852 x10-14 •
Macfarlane et al. [21] observed fine structures in the absorption spectra near the
fundamental absorption edge of Si (-1 e V) measured at various temperatures be-
tween 4.2 and 415 K. These structures were interpreted in terms of indirect transi-
tions involving phonons. The form of the absorption associated with each type of
phonon indicated that, as well as the formation of free electron-hole pairs taking
place, indirect excitons with a: binding energy of -10 meV can be produced in such
optical absorption process. More recently, Keevers and Green [22] have determined
the absorption coefficient near the fundamenta:I absorption edge of Si (T=300 K) to
values as low as 10-7 cm- I by sensitive photocurrent measurements on high efficien-
cy Si solar cells. We reproduce in Fig. A2-2 the aCE) spectrum measured by Keevers
and Green [22]. The fine structures due to three- and four-phonon-assisted absorp-
tion processes are clearly seen in the spectrum. The absorption spectrum in the 1-3-
e V spectral region of Si has also been determined by HultMn [17] by means of opti-
cal transmission and photoconductivity measurements.
SE is an excellent technique to investigate the optical response of semiconductors
over a wide range of photon energies. This technique allows to determine el(E) and
~(E), or alternatively, neE) and k(E) directly without KK analysis. Aspnes and
Studna [23] obtained the optical constants of Si, as well as of other semiconductors,
in the 1.5-6.0-eV region at room temperature through the use of SE. These data
have long been used as the standard source of the optical constants of Si. More re-
cently, Jellison [24] has determined the optical constants of Si using two-channel
polarization modulation spectroscopy. This instrument is particularly well-suited for
the measurement of small values of k, which results in much higher accuracy of the
absorption coefficient of Si for photon energies well below the direct band gap (-3.4
eV). His analysis, however, still required the "mathematical removal" of the effect
of a thin surface layer after surface preparation. The layer was assumed to be a na-
tive oxide film and its thicknesses were d=0.58±O.02, 0.62±O.02, and 0.77±O.02 nm
for Si (111), (110), and (100) surfaces, respectively.
A2 SILICON (Si) 21
10 2
10 1
---- This work
E 10 0 - 0 - Green's Interpolation
g
10-1
'E
10- 2
;g
CD
'i 10- 3
0
0
10- 4
c
E Figure A2·2 Optical ab-
0. 10- 5 sorption at the indirect
.,(; 10- 6
edge of Si at 300 K.
.0
« (From Keevers and
10- 7 Green [22].)
10- 8
1000 1100 1200 1300 1400
Wavelength (nm)
Recently, Nayar et al. [25] reported the e(E) spectra of Si (111) and (100) orien-
tations obtained from ex situ SE on clean epitaxial surfaces. Their data represented
the highest directly observed dielectric-constant peak values of £Z(Ez) ~ 47, so far
reported from a (100) [or (111)] Si surface. Notice that the imaginary part of the
pseudodielectric function at the E2 peak maximum, £Z(E2), can provide a sensitive
and unambiguous indication of the sharpness of the dielectric discontinuity between
the substrate and ambient, i.e., its value reflects not only the residual oxides and oth-
er overlayers but also the selvedge region, bulk degradation, and microstructural
effects as well. The £Z(E2) value, thus, yields direct information about the relative
quality of surface regions prepared by different methods [26]. Nayar et al. [25] de-
monstrated that the surface features with lateral scales of -0.5-2 J.l.m do not affect
the dielectric spectra significantly.
More recently, Yasuda and Aspnes [27] have shown that hydrogen-terminated
Si(lll) wafers prepared with NH4F-based treatments can serve as a calibration stan-
dard for ellipsometers and reflectometers. The £Z(Ez) peak value obtained by these
authors was 48.3±O.l, exceeding the highest previously reported value of 47.6 at
E=4.23 eV measured on epitaxial surfaces [25]. Several authors [28,29] have point-
ed out that the hydrogen atoms on the chemically-treated Si surface result in the
modification of the dielectric function, i.e., a reduction in the £Z value. Yasuda and
Aspnes, however, paid no attention on this effect.
Philipp [30] corrected his measured reflectance spectrum for the presence of a
surface oxide layer and analyzed it using the KK relation to yield a set of the optical
constants for oxide-free Si in the 0-25-e V region. The dielectric-function spectrum
obtained by him gives a peak height of £Z=47 at the Ez peak maximum (-4.25 eV).
The native oxide is speculated to be not Si02 , but more likely some intermediate
oxide such as SiO.
For Si, the threshold for excitation of the 2p electrons (4.3 shell) occurs at about
100 eV and that of the Is electrons (K shell) at about 1840 eV, respectively [31].
The optical properties of Si in the UV-soft X-ray region have been studied by a
number of authors [20,32-7]. The atomic scattering factors for Si have been deter-
mined by Henke et ai. [31,38] between 100 and 2000 eV from the photoabsorption
cross-sectional data. From these scattering factors, Edwards [20] obtained the index
of refraction n and extinction coefficient k for photon energies between 99 and 2000
eV using a model of Henke et ai.
Figure A2-3 shows the extinction coefficient k as a function of photon energy for
Si in the 10-4000-eV region taken from various sources [20,34-6]. These data
clearly reveal the absorption thresholds at the 4,3 and K edges. The data for D-100
eV agree with each other. However, there is a clear difference atE<100 eV between
Edwards [20] and Windt et al. [34]. The data of Philipp [30] are found to fit well
with those of Edwards [20], but not with those of Windt et al. [34]. The Si sample
used by Windt et al. was prepared by electron-beam evaporation. The rms roughness
for this sample was typically of the order of 1.87±O.25 nm. Note that this roughness
value is considerably larger than that of the mirror-finished bulk Si surface (-0.12-
0.18 nm, Ref. [39]). In general, the change in the optical constants due to surface
10°... ,•.... L2,3 edge

....
'\
1
1'\
A'
A # Si
AA
10-2
&
i:t. A :
A
,
&,
A
A' , i/>.
..:s::: 4.. A
i Kedge
1
&
-g
10-4 e.g
~
A Edwards ~ ~
Windt at al. A ,
0 Yanagihara et al. A: 00
-
A' 0
Woronick et al. 0
.I
10-6 101 102 103 104
Photon energy (eV)
Figure A2·3 Extinction coefficient k as a function of photon energy for Si in the 10-4000-
eV spectral region taken from Edwards [20], Windt et al. [34], Yanagihara et al. [35], and
Woronick et al. [36]. The vertical arrows indicate the absorption thresholds at the L-z,3 and K
edges.
A2 SILICON (Si) 23
roughness is larger for shorter wavelength. This is expected as the effect of surface
roughness that becomes conspicuous as the wavelength of light approaches the scale
of the surface height. Since the effect of surface roughness was taken into consid-
eration in the determination of the optical constants by the inclusion of a Debye-
Waller factor in the Fresnel equations, the data of Windt et al. [34] agreed well with
those of Edwards [20], Yanagihara et al. [35], and Woronick et al. [36] (see Fig.
A2-3). The discrepancy at E<100 eV of Windt et al. [34] is puzzling at present.
The optical constants in the interband transition region of Si have been deter-
mined using SE at temperatures between 30 and 820 K by Lautenschlager et al. [40]
and at elevated temperatures from 298 K to 763 K by Jellison and Modine [41]. The
temperature-dependent optical-constant data of Lautenschlager et al. [40] have been
successfully analyzed using the MDF by Adachi and coworker [42]. Effects of dop-
ing on the optical properties of Si have been studied in the far-IR and mid-IR re-
gions by Spitzer and Fan [43], Zhou et al. [44], and Gaymann et al. [45] and in the
interband transition region by Vifla and Cardona [46] and Jellison et al. [47]. Tem-
perature dependence of the near-IR refractive index has also been discussed by a
number of authors [48-50]. Optical absorption by free carriers due to the intercon-
duction-band transitions has been found at 1.-2.3 11m [43]. Effect of the biaxial
strain on the dielectric-function spectra has been reported by Lee and Jones [51].
This effect is found to be relatively large near the EI CP region. The uniaxial-stress-
induced change in the optical constants of Si in the visible-UV range has also been
studied by Etchegoin et al. [52] using SE.
PL in highly porous Si at room temperature has given rise to enormous interest in
this material for its potential in optoelectronic applications [53]. The optical proper-
ties of porous and nanostructure Si have been studied both theoretically [54-6] and
experimentally [57-9]. The optical response of such materials cannot be described
by the bulk dielectric function of Si. The topology is found to significantly influence
the dielectric function of porous Si.
Table A2-1 lists the room-temperature values of E=EI+iEz, n*=n+ik, n, and R for
Si. The EI and n for E:5:1.4 eV were obtained from the Herzberger-type dispersion
formula of Eq. (A1.3) [20]. The Ez and k values for E:5:1.4 eV were calculated from
the experimental n data of Keevers and Green (E:5:1.2395 eV, Ref. [22]) and Philipp
(E=1.3 and 1.4 eV, Ref. [30]). A set of the optical constants in the interband transi-
tion region (1.5:5:E:5:6 eV) were taken from Aspnes and Studna [23] and Nayar et al.
[25]. The optical constants in the UV-soft X-ray region were obtained from Philipp
(7:5:£:5:20 eV, Ref. [30]), Edwards (20.33:5:£:5:386 eV, Ref. [20]), and Yanagihara
(400:5:£:5:3750 eV, Ref. [35]).
The (E I, Ez), (n, k), n, and R values in Table A2-1 are plotted in Figs. A2-4-A2-7,
respectively. The vertical arrows in the figures indicate the positions of each CP and
E gX gap. The MDF analysis [42,60] suggested that the EI structure can be character-
ized by a 3D MI (or 2D Mo) CP, the E2 structure by a mixture of DHO (a broadened
2D MI CP) and 2D M2 CP, and the EI' structure by the DHO.
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A2 SILICON (Si) 25
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26 GROUP-N SEMICONDUCTORS
50
40
30
20
01------
-10
-20
0~~~2~~-4~~~6~~~8
Photon energy (eV)

Figure A2-4 £l(E) and £2(E) spectra for Si at 300 K.
5
~ 4
c
3
2
El
!
0 2 4 6 8
Photon energy (eV)
Figure A2-S neE) and k(E) spectra for Si at 300 K.
A2 Sll..ICON (Si) 27
Si
10-3
10-6
10° 10 1 102 10 3 104

Photon energy (eV)
Figure A2·6 ~E) spectrum for Si at 300 K.
0.9 ,.--,---r-.....--.----.-..,.-----.--,
0.8
0.7
0.6
c:
0.5
EgX
0.4 ! Si
0.3
0.20!:---'---::2!:---'---4~-'---::6!:---'--~8
Photon energy (eV)
Figure A2·7 R(E) spectrum for Si at 300 K.
Table A2-1 Optical constants of Si at 300 K.

eV £1 £2 n k a. (em· l ) R
0.002 11.68 3.417 0.299
0.004 11.68 3.417 0.299
0.006 11.68 3.418 0.300
0.008 11.69 3.418 0.300
0.Ql 11.69 3.419 0.300
0.012 11.69 3.419 0.300
0.014 11.69 3.419 0.300
0.016 11.69 3.419 0.300
0.Ql8 11.69 3.419 0.300
0.02 11.69 3.419 0.300
0.04 11.69 3.419 0.300
0.06 11.69 3.419 0.300
0.08 11.69 3.420 0.300
0.1 11.70 3.420 0.300
0.2 11.71 3.422 0.300
0.3 11.74 3.426 0.300
0.4 11.78 3.432 0.301
0.5 11.83 3.440 0.302
0.6 11.90 3.450 0.303
0.7 11.98 3.461 0.304
0.8 12.08 3.476 0.306
0.8548 12.14 2.57E-12 3.485 3.69E-13 3.20E-08 0.307
0.8608 12.15 3.36E-12 3.486 4.81E-13 4.20E-08 0.307
0.8668 12.16 6.11E-12 3.487 8.76E-13 7.70E-08 0.307
0.8729 12.16 6.70E-12 3.488 9.61E-13 8.50E-08 0.307
0.8791 12.17 1.17E-11 3.489 1.68E-12 1.50E-07 0.307
0.8854 12.18 1.56E-11 3.490 2.23E-12 2.00E-07 0.308
0.8917 12.19 1.93E-11 3.491 2.77E-12 2.50E-07 0.308
0.8982 12.20 3.45E-11 3.492 4.94E-12 4.50E-07 0.308
0.9 12.20 3.98E-11 3.493 5.70E-12 5.20E-07 0.308
0.9047 12.20 5.10E-11 3.493 7.30E-12 6.70E-07 0.308
0.9114 12.21 8.02E-11 3.495 1.15E-11 1.06E-06 0.308
0.9181 12.22 1.28E-1O 3.496 1.83E-11 1.70E-06 0.308
0.925 12.23 2.61E-1O 3.497 3.73E-11 3.50E-06 0.308
0.932 12.24 5.92E-1O 3.499 8.47E-11 8.00E-06 0.308
0.939 12.25 1.18E-09 3.500 1.68E-1O 1.60E-05 0.309
0.9462 12.26 1.97E-09 3.501 2.81E-10 2.70E-05 0.309
0.9535 12.27 3.26E-09 3.503 4.66E-1O 4.50E-05 0.309
0.9609 12.28 5. 11E-09 3.504 7.29E-1O 7.lOE-05 0.309
0.9684 12.29 8.57E-09 3.506 1.22E-09 1.20E-04 0.309
0.976 12.30 1.42E-08 3.507 2.02E-09 2.00E-04 0.309
0.9837 12.31 2.53E-08 3.509 3.61E-09 3.60E-04 0.310
0.9916 12.32 6.98E-08 3.511 9.95E-09 1.00E-03 0.310
0.9996 12.34 1.66E-07 3.512 2.37E-08 2.40E-03 0.310
1 12.34 1.68E-07 3.512 2.39E-08 2.42E-03 0.310
1.0077 12.35 3.23E-07 3.514 4.60E-08 4.70E-03 0.310
1.016 12.36 5.60E-07 3.516 7.96E-08 8.20E-03 0.310
1.0244 12.37 8.81E-07 3.518 1.25E-07 1.30E-02 0.311
1.0329 12.39 1.48E-06 3.520 2.1OB-07 2.20E-02 0.311
1.0416 12.40 2.40E-06 3.522 3.41E-07 3.60E-02 0.311
A2 SILICON (Si) 29
Table A2·1 Continued (Si).

eV 1'1 1'2 n k a (cm· 1) R
1.0504 12.42 5.36E-06 3.524 7.61E-07 8.lOE-02 0.311
1.0594 12.43 1.54E-05 3.526 2.19E-06 2.35E-Ol 0.311
1.0685 12.45 3.19E-05 3.528 4.52E-06 4.90E-Ol 0.312
1.0778 12.46 5.17E-05 3.530 7.32E-06 8.00E-Ol 0.312
1.0873 12.48 6.73E-05 3.532 9.53E-06 1.05E+00 0.312
1.0969 12.49 1.08E-04 3.535 1.53E-05 1.70E+00 0.312
1.1 12.50 1.14E-04 3.535 1.61E-05 1.80E+00 0.313
1.1067 12.51 1.30E-04 3.537 1.84E-05 2.06E+00 0.313
1.1167 12.53 1.88E-04 3.540 2.65E-05 3.00E+00 0.313
1.1268 12.55 2.48E-04 3.542 3.50E-05 4.00E+00 0.313
1.1372 12.57 3.32E-04 3.545 4.68E-05 5.40E+00 0.314
1.1477 12.59 4.27E-04 3.548 6.02E-05 7.00E+00 0.314
1.1584 12.61 5.44E-04 3.551 7.66E-05 9.00E+00 0.314
1.1693 12.63 7.79E-04 3.554 1.10E-04 1.30E+Ol 0.314
1.1805 12.65 1.07E-03 3.557 1.50E-04 1.80E+Ol 0.315
1.1918 12.67 1.53E-03 3.560 2. 15E-04 2.60E+Ol 0.315
1.2 12.69 1.67E-03 3.562 2.34E-04 2.85E+Ol 0.315
1.2034 12.70 1.90E-03 3.563 2.66E-04 3.25E+Ol 0.316
1.2152 12.72 2.32E-03 3.567 3.25E-04 4.00E+Ol 0.316
1.2272 12.75 2.87E-03 3.570 4.02E-04 5.00E+Ol 0.316
1.2395 12.77 3.70E-03 3.574 5.17E-04 6.50E+Ol 0.317
1.3 12.91 1.09E-02 3.593 1.52E-03 2.00E+02 0.319
1.4 13.17 2.35E-02 3.628 3.24E-03 4.60E+02 0.323
1.5 13.488 0.038 3.673 0.005 7.87E+02 0.327
1.6 13.793 0.057 3.714 0.008 1.24E+03 0.331
1.7 14.079 0.078 3.752 0.010 1.79E+03 0.335
1.8 14.413 0.099 3.796 0.013 2.38E+03 0.340
1.9 14.797 0.126 3.847 0.016 3.15E+03 0.345
2 15.254 0.172 3.906 0.022 4.46E+03 0.351
2.1 15.754 0.236 3.969 0.030 6.33E+03 0.357
2.2 16.334 0.260 4.042 0.032 7. 17E+03 0.364
2.3 16.994 0.396 4.123 0.048 1.12E+04 0.372
2.4 17.761 0.508 4.215 0.060 1.47E+04 0.380
2.5 18.661 0.630 4.320 0.073 1.85E+04 0.390
2.6 19.724 0.803 4.442 0.090 2.38E+04 0.400
2.7 20.987 1.193 4.583 0.130 3.56E+04 0.412
2.8 22.80 1.543 4.777 0.161 4.58E+04 0.428
2.9 24.96 1.886 4.999 0.189 5.55E+04 0.445
3 27.63 2.743 5.263 0.261 7.93E+04 0.464
3.1 31.61 4.286 5.635 0.380 1.20E+05 0.490
3.2 37.91 7.429 6.186 0.600 1.95E+05 0.524
3.3 45.34 19.20 6.876 1.396 4.67E+05 0.570
3.4 34.37 37.71 6.534 2.886 9.95E+05 0.598
3.5 22.11 34.80 5.627 3.092 1.10E+06 0.579
3.6 19.08 32.57 5.331 3.055 1.12E+06 0.568
3.7 17.10 32.69 5.195 3.146 1.18E+06 0.570
3.8 15.11 33.49 5.092 3.288 1.27E+06 0.575
3.9 13.39 34.80 5.033 3.457 1.37E+06 0.584
4 11.57 37.31 5.032 3.708 1.50E+06 0.599

eV £1 £2 n k a (cm· 1) R
4.1 7.858 41.83 5.021 4.165 1.73E+06 0.625
4.2 0.000 47.49 4.873 4.873 2.07E+06 0.665
4.3 -15.11 43.43 3.929 5.527 2.4lE+06 0.713
4.4 -19.86 32.57 3.024 5.386 2.40E+06 0.732
4.5 -19.78 23.54 2.342 5.026 2.29E+06 0.743
4.6 -17.88 17.60 1.899 4.635 2. 16E+06 0.746
4.7 -15.20 14.51 1.705 4.255 2.03E+06 0.732
4.8 -12.95 12.86 1.628 3.950 1.92E+06 0.711
4.9 -11.40 11.94 1.599 3.736 1.86E+06 0.691
5 -10.28 11.14 1.562 3.566 1.81E+06 0.676
5.1 -9.291 10.78 1.571 3.429 1.77E+06 0.658
5.2 -8.724 10.66 1.589 3.354 1.77E+06 0.646
5.3 -8.751 10.59 1.579 3.353 1.80E+06 0.647
5.4 -9.168 9.907 1.471 3.366 1.84E+06 0.663
5.5 -9.106 8.846 1.340 3.302 1.84E+06 0.673
5.6 -8.726 7.999 1.247 3.207 1.82E+06 0.675
5.7 -8.325 7.400 1.186 3.120 1.80E+06 0.673
5.8 -7.987 6.898 1.133 3.045 1.79E+06 0.672
5.9 -7.721 6.460 1.083 2.982 1.78E+06 0.673
6 -7.443 5.877 1.010 2.909 1.77E+06 0.677
7 -5.440 3.340 0.687 2.431 1.73E+06 0.686
8 -3.600 1.920 0.490 1.960 1.59E+06 0.677
9 -2.400 1.220 0.382 1.596 1.46E+06 0.657
10 -1.800 0.840 0.305 1.376 1.39E+06 0.661
11 -1.280 0.628 0.270 1.163 1.30E+06 0.636
12 -0.860 0.500 0.260 0.963 1.17E+06 0.587
13 -0.560 0.420 0.265 0.794 1.05E+06 0.525
14 -0.328 0.340 0.269 0.633 8.98E+05 0.465
15 -0.168 0.300 0.297 0.506 7.69E+05 0.388
16 -0.032 0.264 0.342 0.386 6.26E+05 0.298
17 0.076 0.232 0.400 0.290 5.00E+05 0.217
18 0.160 0.204 0.458 0.223 4.07E+05 0.158
19 0.240 0.158 0.513 0.154 2.96E+05 0.113
20 0.312 0.140 0.572 0.122 2.48E+05 0.080
20.33 0.343 0.087 0.590 0.074 1.53E+05 0.069
20.66 0.368 0.079 0.610 0.065 1.36E+05 0.060
21.01 0.390 0.073 0.627 0.058 1.24E+05 0.054
21.75 0.432 0.060 0.659 0.046 1.00E+05 0.043
22.54 0.476 0.050 0.691 0.037 8.34E+04 0.034
23.39 0.520 0.042 0.722 0.029 6.92E+04 0.026
24.31 0.565 0.037 0.752 0.024 5.99E+04 0.020
25.3 0.605 0.032 0.778 0.021 5.26E+04 0.016
26.38 0.644 0.029 0.803 0.018 4.76E+04 0.012
27.55 0.679 0.026 0.824 0.016 4.41E+04 0.0094
28.83 0.710 0.025 0.843 0.Q15 4.30E+04 0.0073
30.24 0.739 0.024 0.860 0.014 4.23E+04 0.0057
31.79 0.769 0.023 0.877 0.013 4.25E+04 0.0043
33.51 0.797 0.022 0.893 0.012 4.21E+04 0.0032
35.42 0.821 0.021 0.906 0.012 4.20E+04 0.0025
A2 Sn..ICON (Si) 31

eV £1 £2 n k a (em·l ) R
37.57 0.843 0.018 0.918 0.010 3.81E+04 0.0019
40 0.865 0.019 0.930 0.010 4.06E+04 0.0013
42.75 0.887 0.017 0.942 0.0090 3.90E+04 9. 13E-04
45.92 0.906 0.015 0.952 0.0079 3.65E+04 6.21E-04
49.59 0.922 0.013 0.960 0.0067 3.37E+04 4.28E-04
53.91 0.937 0.011 0.968 0.0055 3.02E+04 2.72E-04
59.04 0.953 0.0086 0.976 0.0044 2.65E+04 1.53E-04
65.26 0.964 0.0067 0.982 0.0034 2.27E+04 8.55E-05
72.93 0.976 0.0050 0.988 0.0025 1.88E+04 3.81E-05
77,49 0.982 0.0043 0.991 0.0022 1.69E+04 2. 16E-05
88.56 1.000 0.0029 1.000 0.0014 12839.16 5. llE-07
93.93 1.044 0.0025 1.022 0.0012 1.14E+04 1.19E-04
95.37 1.061 0.0023 1.030 0.0011 1.09E+04 2. 19E-04
98.4 1.069 0.0021 1.034 0.0010 1.02E+04 2.80E-04
99.19 1.069 0.0021 1.034 0.0010 1.01E+04 2.80E-04
100 1.065 0.0032 1.032 0.0015 1.56E+04 2,49E-04
100.8 1.061 0.010 1.030 0.0050 5. llE+04 2.24E-04
101.6 1.050 0.049 1.025 0.024 2.47E+05 2.93E-04
102 1.048 0.054 1.024 0.026 2.71E+05 3.09E-04
104 1.026 0.052 1.013 0.026 2.70E+05 2.05E-04
107 1.013 0.050 1.007 0.025 2.68E+05 1.64E-04
110 1.007 0.048 1.004 0.024 2.67E+05 1.46E-04
112 1.004 0.047 1.002 0.023 2.65E+05 1.37E-04
115 1.001 0.045 1.001 0.023 2.63E+05 1.28E-04
118 0.999 0.044 1.000 0.022 2.62E+05 1.20E-04
121 0.997 0.042 0.999 0.021 2.60E+OS 1.13E-04
124 0.995 0.041 0.998 0.021 2.59E+05 1.08E·04
127 0.994 0.040 0.997 0.020 2.58E+05 1.02E-04
130 0.993 0.039 0.996 0.019 2.56E+05 9.76E-05
133 0.992 0.037 0.996 0.019 2.53E+05 9.28E-05
136 0.991 0.036 0.995 0,018 2.52E+05 8.92E-OS
140 0.990 0.035 0.995 0,018 2.5IE+05 8.51E-OS
143 0.989 0.034 0.99S 0.017 2,49E+OS 8.17E-OS
147 0.988 0.033 0.994 0.017 2,47E+OS 7.79E-05
ISO 0.987 0.032 0.994 0.016 2.46E+05 7.56E-05
154 0.987 0.031 0.993 0.016 2,45E+05 7.30E-05
lS8 0.986 0.030 0.993 O,01S 2.43E+OS 7.IOE-OS
162 0.98S 0.029 0.992 O,01S 2.38E+OS 6.77E-OS
166 0.98S 0.029 0.992 O.OIS 2,44E+OS 6.77E-OS
170 0.983 0.02S 0.992 0.013 2.21E+OS S.84E-OS
174 0.983 0.024 0.992 0.012 2.13E+OS 5.44E-OS
178 0.983 0.023 0.992 0.011 2.06E+05 S.04E-05
182 0.983 0.021 0.992 0.011 1.97E+OS 4.6SE-OS
187 0.983 0.020 0.992 0.010 1.90E+OS 4.27E-OS
191 0.983 0.019 0.992 0.009S 1.83E+OS 4.00E-OS
196 0.984 0.017 0.992 0.0088 1.7SE+OS 3.6SE-OS
201 0.984 0.016 0.992 0.0082 1.67E+OS 3.33E-OS
206 0.984 O.OIS 0.992 0.0076 l.S9E+OS 3.06E-OS
211 0.984 0.014 0.992 0.0071 l.S2E+OS 2.81E-OS
Table A2·I Continued (Si).

eV EI E2 n k a. (em· l ) R
216 0.985 0.013 0.992 0.0066 1.45E+05 2.58E-05
227 0.986 0.011 0.993 0.0057 1.31E+05 2. 13E-05
238 0.986 0.010 0.993 0.0049 1.19E+05 1.79E-05
250 0.987 0.0084 0.994 0.0042 1.07E+05 1.48E-05
262 0.988 0.0073 0.994 0.0037 9.70E+04 1.23E-05
275 0.989 0.0062 0.994 0.0031 8.73E+04 1.02E-05
289 0.990 0.0053 0.995 0.0027 7.82E+04 8.35E-06
303 0.991 0.0046 0.995 0.0023 7.03E+04 6.9IE-06
318 0.991 0.0039 0.996 0.0020 6.29E+04 5.68E-06
334 0.992 0.0033 0.996 0.0017 5.62E+04 4.67E-06
351 0.993 0.0028 0.996 0.0014 5.02E+04 3.82E-06
368 0.993 0.0024 0.997 0.0012 4.48E+04 3. 14E-06
386 0.994 0.0020 0.997 0.0010 3.99E+04 2.59E-06
400 0.995 0.0018 0.99725 8.90E-04 3.61E+04 2.09E-06
600 0.998 0.00051 0.99878 2.55E-04 1.55E+04 3.89E-07
800 0.9986 0.00020 0.99931 9.99E-05 8.lOE+03 1.23E-07
1000 0.9991 0.00010 0.99955 4.98E-05 5.05E+03 5. 13E-08
1750 0.9997 0.000008 0.99987 3.98E-06 7.06E+02 4.43E-09
2000 0.9998 0.000067 0.99989 3.35E-05 6.79E+03 3.36E-09
2500 0.99984 0.000016 0.99992 7.90E-06 2.00E+03 1.54E-09
3000 0.99988 0.000020 0.99994 1.01E-05 3.07E+03 9.87E-I0
3750 0.99990 0.000014 0.99995 6.90E-06 2.62E+03 5.88E-1O
A3 GERMANIUM
(Ge)

Germanium (Ge) is a gray-white metalloid, and in its pure state is crystalline and
brittle, retaining its luster in air at room temperature. Zone-refining technique has
led to production of ultrahigh-purity Ge single crystals. It is a very important semi-
conducting material used as a transistor element and also for optoelectronic device
applications, including extremely sensitive IR photo-detectors.

Figure A3-1 shows the electronic energy-band structure of Ge obtained by an ENPM
with including SO interaction [I]. The crystal structure of Ge is the same as that of
Si. The electronic energy-band structure of Ge is thus essentially the same as that of
Si. However, the conduction-band ordering at the r point of Ge is quite different
Figure A3·1 Electronic en-

ergy-band structure of Ge
obtained by an ENPM with
including SO interaction.
(From Chelikowsky and
Cohen [1].) The locations of
several interband transitions
are included by the vertical
arrows.
-12
r U.K r
33
from that of Si (see Fig. 1.8). In Si the lowest-lying r conduction band is p-like r ls
(r6-, r s-); however in Ge the s-like r 2. (r7-) band is the lowest conduction band. Such
conduction-band ordering in Ge is the same as that in III-V and II-VI, zinc-blende
semiconductors [i.e., these zinc-blende-type semiconductors have the s-like lowest-
lying and p-like second lowest-lying conduction bands].
The fundamental absorption edge of Ge corresponds to indirect transitions from
the highest valence band at the r point to the lowest conduction band at or near L
[i.e., rS+~L6- (or A 6-) ]. As in the zinc-blende semiconductors, the lowest-direct-gap
transitions in Ge occur at the center of the BZ, rS+~r7- (Eo) and r/~r7- (Eo+.1o).
The EI and EI+d l structures result from transitions in the A (L) directions of the BZ.
The next prominent structure, E2 , is attributed to an accidental coincidence of an MI
saddle point at X and an M2 saddle point in the 1: directions [2-4]. The E2 structure
is also believed to originate mainly from a region in the r -X-U-L plane near
k=(21t/a)(3/4,l/4,l/4) [5,6]. More recently, it has been attributed to a small region
centered at k=(21t/a)(0.77,0.29,0.16) [7]. The Eo' and E I' transitions may occur at or
near the rand L points in the BZ, respectively. The .10, .10', and d l splittings in Ge
are considerably larger than those of Si, and thus their related transitions have been
clearly observed experimentally. Table A3-1 summarizes the CP energies and indi-
rect-band-gap energy in Ge [8].
TABLE A3-1 Energies of the indirect band gap (E,L) and CPs in
Geat300K.
E gL , CPs eV
ELg 0.67
Eo 0.80
Eo+L1o 1.09
EI 2.11
EI+L1 1 2.30
Eo' region 2.8-3.47
Ez 4.35
E I' 5.8

The static dielectric constant measured for a pure Ge sample (> 1 MQ·cm at 4.2 K)
at 9.2 GHz by D' Altroy and Fan [9] is 16.0±O.3 at 4.2 K and 16.2±O.3 at room tem-
perature. Randall and Rawcliffe [10] measured from multiple reflections the refrac-
tive-index dispersion for a high-resistive Ge (>20 Q·cm) in the far-IR region (80-
500 11m). Their data give the static (high-frequency) dielectric constant of 16.05.
More recently, Afsar et al. [11] have used dispersive Fourier transform spectrometry
to determine the complex refractive index of Ge in the 5-180-cm-1 spectral region at
25°C. The real part of the refractive index they obtained shows a nearly constant
value of 4.005 between 55 and 180 cm- I (n2=e,=16.04). It is also found free-carrier
A3 GERMANIUM (Ge) 35
effects below <55 cm-! with n decreasing and k increasing [10,11]. The temperature
and pressure dependence of the static dielectric constant for Si has been discussed in
Ref. [12].
The IR lattice absorption bands in Ge have been measured by a number of groups
[13-16]. We show in Fig. A3-2 the results measured by Fray et al. [16]. The observ-
ed lattice absorption bands have been assigned to as summation bands involving
four characteristic phonon energies of hro ro-35 meV. hroLO-30 meV. hroLA-23 meV.
and hro TA-8 meV [16]; for example. the most intense band at E-43 meV has been
assigned to as a combination of TO+T A phonons. Especially intriguing here is the
clearly indicated split in the most intense band [15.16]. Aronson et al. [15] consid
ered that the splitting is analogous to the intriguing doublet in the band at -2000
cm-! in diamond (see Fig. Al-2). They gave a possible explanation of this splitting
as due to an isotope effect that could possibly be justified for Ge on the basis of its
stable isotope abundance [15]. This explanation. however. clearly must fail for dia-
mond because suitable stable isotopes are not present in sufficient abundance for
this element.
The refractive-index dispersion in the transparent region of Ge has been measured
by several authors [17-21]. Li [22] has also discussed the refractive-index disper-
sion and its temperature dependence for Ge in the ranges 1.9 to 16 ~m and 100-550
K. We plot in Fig. A3-3 the n dispersion in Ge measured by Briggs [17]. Salzberg
and Villa (at 300 K. Ref. [18]). Icenogle et al. (at 297 K, Ref. [20]). and Edwin et al.
(at 293 K, Ref. [21]). We can understand from this figure that each data agrees
within 0.2%.
The temperature-dependent n data of Icenogle et al. [20] were used to fit with the
Sellmeier-type dispersion formula [23]:
Bt.: m.}
n2 =A + + --.:,.--- (A 3.1)
(}..} - C) (t.: - E)
Using this equation, Barnes and Piltch [23] determined the following temperature-
dependent Sellmeier coefficients:
A=-6.040x1 0-3T+11.05128
B= 9.295xlO- 3T+4.00536
C=-5.392xlO-4T+0.599034 (A3.2)
D= 4.151xlO-4T+0.09145
E= 1.51408 T+3426.5
The solid line in Fig. A3-3 shows the calculated result of this equation with T=297 K.
We can see in this figure that the Sellmeier-type equation, Eq. (A3-1), is a good ex-
pression for the n dispersion in the wavelength range 2 to 20 ~m.
The intrinsic absorption spectra of high-purity Ge have been measured by several
authors [24-6]. Macfarlane et al. [25] observed fine structures that could be inter-
~
c:I\
Wavtltnqth (I'm)
25 22 20
Wavtlenqth (I'm)
16 15 14 13 12 1\ 10 0-10
I I I I j 1 J.
0-08
-06
293 "K
~ -04
'" 0-6~ J WI'(
E E
.§
0-02 .§
."
;:; ."
u
~ 0-2
8 10-01 ~
c
..g ·008 o~
~ 0-10' ·006 .~
g
~ o-o~- ,0-004 ~
0-06
(b) o
0-04
I 0-002 ~
, ~
iTWO-Phonon cut-off jThrtt-Phonon cut-off
1
0-02 ~
(a) 0-08 0-09 0-10 0-1\ 0-12 0-124 en
Entrqy (tV)
tIl
oj I I I
~
0-04 0-05 0-06 0-07 n
Entrqy (tV)
~
o
Figure A3-2 Lattice absorption bands in Oe for energies (a) below and (b) above the two-phonon
cut off. (From Fray et al. [16].)
en
~
4.16
• Ge
4.12
• Briggs
I>. Salzberg & Vila
Icenogle et a!.
c 4.08 [J
o Edwin eta!.
4.04
4.00
10° 10 1
Wavelength (J.l m)
Figure A3·3 Refractive-index dispersion in Ge measured by Briggs [17], Salzberg and Villa
(at 300 K, Ref. [18]), Icenogle et at. (at 297 K, Ref. [20]), and Edwin et al. (at 293 K, Ref.
[21]). The solid line shows the calculated result of Eq. (A3.1) with T=297 K [23].
preted in terms of indirect transitions involving phonons in the whole temperature

range they studied (4.2-291 K). We reproduce in Fig. A3-4 their obtained results.
Hobden [26] observed the direct absorption edges at 0.806 e V (Eo) and 1.1 e V
(Eo+£\o) at 290 K. More recently, Frova et at. [27] have measured wavelength-
modulation spectra of the absorption coefficient for LA-phonon-assisted indirect
transitions at 1.1 K and deduced the indirect-exciton binding energies of 4.15 meV
(L4./) and 3.14 meV (L/).
The optical constants in the interband transition region of Ge have been deter-
mined from measurements of reflectivity at normal incidence by Philipp and co-
workers [28,29]. The real part of the refractive index n had maxima of 5.5 at 2.07 eV
and 4.2 at 3.2 eV. The ~ value at the E 2-4.3 eV peak, ~(E2)' was -29.3. Aspnes and
Studna [30] also determined a set of the optical constants for Ge(lll) using SE.
Their SE data give the n maxima of 5.748 at 2.1 eV and 4.157 at 3.2 eV and ~(E2)
of30.089 at £2=4.3 eV.
More recently, Jellison [31] has determined the optical constants of Ge(100) using
two-channel polarization modulation spectroscopy. This instrument is particularly
well-suited for the measurement of small values of k. His data show the n maxima of
5.811 at 2.083 eV and 4.247 at 3.178 eV. The £2(E2) value obtained is 31.806 at
£2=4.245 eV. This value is considerably larger than that obtained by Aspnes and
6
",
,"
2'3 ...."
-----55 ",
'-" ",
:..:
0--
2'2 ","
:z:
,"
~4
;:;: ","
u. ,,'
w
0
u
:z:
~3
c..
a:
0
V'l
co
""
u.
02 .:"'/
15
~ ..-..
w
a:
""
gl ,../
Figure A3·4 Optical absorption spectrum for high-purity Ge at various temperatures. (From
Macfarlane et al. [25].)
Studna (30.089, Ref. [30)). It should be noted, however, that the value of Jellison
was obtained after mathematically removing the effect of an oxide overlayer, The
thickness of this oxide overlayer was determined to be 1.13 nm using a nulling ellip-
sometry experiment at t..=1152 nm (k-O),
Cardona et at. [32] measured the optical absorption spectrum of Ge from 15 to
170 eV and observed weak structures at -30 eV and 120 eV. These structures corre-
spond to the M 4 •5 (30.1 eV) and M 2•3 (123 eV) absorption edges, respectively [33].
An experimental determination of the optical constants in the 23.6-67-A wavelength
range (185-525.2 eV) was made by Lukirskii et al. [34]. We find from their data
that the o=l-n and k are dependent on wavelength approximately as 00ct..1.2 and
koc t..2 .2 , respectively.
Temperature dependence of the refractive index in the transparent region of Ge
has been discussed by several authors [35,36]. SE has been used by Viiia et at, [37]
to measure optical constants of Ge in the range 1.25 to 5.6 eV at temperatures be-
tween 100 and 850 K. The effects of doping on the optical properties of Ge have
also been studied by Viiia and Cardona [38] using SE in the 1.6-5.6-eV spectral
range. A red shift of the CP energies. together with an increase in the lifetime broad-
A3 GERMANIUM CGe) 39
ening, have been observed (see Figs. 3.28 and 3.29). The uniaxial-stress-induced
change in the optical constants of Ge in the visible-UV range has also been studied
using SE by Etchegoin et at. [39]. Free-carrier absorption in n-Ge has been meas-
ured by Fan et at. [40]. Intervalence-band absorption has also been found in p-Ge by
Briggs and Fletcher [41].
We list in Table A3-2 the room-temperature values of £=£,+i£;Z, n*=n+ik, n, and R
for Ge. The £, and n below the fundamental absorption edge were calculated from
the Sellmeier-type dispersion formula of Eq. (A3.1) [23]. The £;Z and k values for
E:::;1.45 eV were obtained from the experimental n data of Dash and Newman [24].
A set of the optical constants in the interband transition region (1.476:::;E:::;21 eV)
were taken from Jellison [31] and Philipp and Ehrenreich [29]. The n values for
22:::;E:::;155 eV were read from a graph of Cardona et al. [32]. The optical constants
for R185 eV were taken from Lukirskii et at. [34].
The (£" £:z), (n, k), n, and R values in Table A3-2 are graphed in Figs. A3-5-A3-8,
EgL gap. It has been shown [8,42] that such optical-constant spectra can be success-
fully explained by the MDF.
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A3 GERMANIUM (Ge)
41
-200~~2~~4~~6~~8~~10
Photon energy (eV)
Figure A3-S E1(E) and E2(E) spectra for Ge at 300 K.
7r-~'-~-'~~~~~~~
~ 4
c 3
o 246 8 10
Photon energy (eV)
Figure A3-6 n(E) and k(E) spectra for Ge at 300 K.
100 101 102

Photon energy (eV)
Figure A3-7 cx(E) spectrum for Ge at 300 K.
0.2
Ge
0.1
o 2 4 6 8 10
Photon energy (eV)
Figure A3-8 R(E) spectrum for Ge at 300 K.
Table A3-2 Optical constants of Ge at 300 K.
eV £\ £2 n k a (cm'\) R
0.Q3 15.86 3.982 0.358
0.04 15.96 3.994 0.359
0.05 15.99 3.998 0.360
0.06 16.00 4.000 0.360
0.07 16.01 4.002 0.360
0.08 16.02 4.003 0.360
0.09 16.03 4.004 0.360
0.1 16.03 4.004 0.360
0.15 16.06 4.008 0.361
0.2 16.10 4.012 0.361
0.25 16.15 4.018 0.362
0.3 16.20 4.025 0.362
0.35 16.27 4.033 0.363
0.4 16.35 4.043 0.364
0.45 16.44 4.054 0.365
0.5 16.54 4.067 0.366
0.55 16.66 4.082 0.368
0.6 16.80 4.099 0.369
0.63 16.89 2.1E-05 4.110 2.51E-06 1.60E-Ol 0.370
0.64 16.92 5.20E-05 4.113 6.32E-06 4.10E-Ol 0.371
0.65 16.95 1.77E-04 4.117 2.15E-05 1.42E+00 0.371
0.66 16.98 3.94E-04 4.121 4.78E-05 3.20E+00 0.371
0.67 17.02 7.41E-04 4.125 8.98E-05 6.lOE+00 0.372
0.68 17.05 1.14E-03 4.130 1.38E-04 9.50E+00 0.372
0.69 17.09 1.65E-03 4.134 2.00E-04 1.40E+01 0.373
0.7 17.12 2.22E-03 4.138 2.68E-04 1.90E+01 0.373
0.71 17.16 2.88E-03 4.143 3.47E-04 2.50E+Ol 0.373
0.72 17.20 3.52E-03 4.147 4.25E-04 3. lOE+O 1 0.374
0.73 17.24 4.38E-03 4.152 5.27E-04 3.90E+01 0.374
0.74 17.28 5.54E-03 4.157 6.66E-04 5.00E+01 0.375
0.75 17.32 6.79E-03 4.162 8. 15E-04 6.20E+01 0.375
0.76 17.36 8.33E-03 4.167 9.99E-04 7.70E+01 0.376
0.77 17.40 0.011 4.172 1.28E-03 1.00E+02 0.376
0.78 17.45 0.014 4.177 1.67E-03 1.32E+02 0.377
0.79 17.49 0.020 4.182 2.37E-03 1.90E+02 0.377
0.8 17.54 0.036 4.188 4.32E-03 3.50E+02 0.378
0.85 17.79 0.578 4.218 0.068 5.90E+03 0.380
0.9 17.82 0.583 4.222 0.069 6.30E+03 0.381
1 18.12 0.739 4.258 0.087 8.80E+03 0.384
1.1 18.69 0.915 4.325 0.106 1.18E+04 0.390
1.2 19.39 1.108 4.405 0.126 l.53E+04 0.397
1.3 20.04 1.380 4.479 0.154 2.03E+04 0.404
1.4 20.74 1.798 4.558 0.197 2.80E+04 0.411
1.45 21.11 1.990 4.600 0.216 3. 18E+04 0.414
1.476 21.34 2.193 4.626 0.237 3.55E+04 0.416
1.484 21.36 2.221 4.628 0.240 3.61E+04 0.417
1.493 21.51 2.201 4.644 0.237 3.59E+04 0.418
1.502 21.56 2.204 4.649 0.237 3.61E+04 0.418
1.512 21.61 2.281 4.655 0.245 3.76E+04 0.419
1.521 21.74 2.363 4.670 0.253 3.90E+04 0.420
44 GROUP-IV SEMICONDUcrORS
Table A3-2 Continued (Ge).

eV £1 £2 n k a (cm,l) R
1.53 21.83 2.386 4.679 0.255 3.96E+04 0.421
1.54 21.94 2.364 4.691 0.252 3.93E+04 0.422
1.549 22.01 2.434 4.699 0.259 4.07E+04 0.422
1.559 22.11 2.477 4.709 0.263 4. 16E+04 0.423
1.569 22.19 2.510 4.718 0.266 4.23E+04 0.424
1.579 22.34 2.566 4.734 0.271 4.34E+04 0.425
1.589 22.39 2.616 4.740 0.276 4.45E+04 0.426
1.599 22.56 2.693 4.758 0.283 4.59E+04 0.427
1.61 22.66 2.756 4.769 0.289 4.72E+04 0.428
1.62 22.78 2.802 4.782 0.293 4.81E+04 0.429
1.631 22.92 2.859 4.797 0.298 4.93E+04 0.431
1.642 23.06 2.935 4.812 0.305 5.08E+04 0.432
1.653 23.19 3.011 4.826 0.312 5.23E+04 0.433
1.664 23.37 3.091 4.845 0.319 5.38E+04 0.434
1.675 23.48 3.147 4.856 0.324 5.50E+04 0.435
1.686 23.67 3.238 4.876 0.332 5.67E+04 0.437
1.698 23.83 3.347 4.894 0.342 5.89E+04 0.438
1.71 24.02 3.419 4.913 0.348 6.03E+04 0.440
1.722 24.20 3.512 4.932 0.356 6.22E+04 0.441
1.734 24.31 3.629 4.944 0.367 6.45E+04 0.442
1.746 24.51 3.734 4.965 0.376 6.66E+04 0.444
1.758 24.70 3.848 4.985 0.386 6.88E+04 0.446
1.771 24.92 3.976 5.008 0.397 7. 13E+04 0.447
1.783 25.18 4.139 5.035 0.411 7.43E+04 0.450
1.796 25.42 4.291 5.060 0.424 7.72E+04 0.452
1.809 25.67 4.466 5.086 0.439 8.05E+04 0.454
1.823 25.95 4.644 5.114 0.454 8.39E+04 0.456
1.836 26.21 4.833 5.141 0.470 8.75E+04 0.458
1.85 26.52 5.070 5.173 0.490 9. 19E+04 0.460
1.864 26.81 5.286 5.203 0.508 9.60E+04 0.463
1.878 27.23 5.581 5.245 0.532 1.0 1E+05 0.466
1.892 27.55 5.869 5.278 0.556 1.07E+05 0.469
1.907 27.94 6.222 5.318 0.585 1.l3E+05 0.472
1.922 28.35 6.582 5.360 0.614 1.20E+05 0.475
1.937 28.77 7.035 5.403 0.651 1.28E+05 0.478
1.952 29.21 7.531 5.449 0.691 1.37E+05 0.482
1.967 29.65 8.065 5.494 0.734 1.46E+05 0.485
1.983 30.20 8.783 5.552 0.791 1.59E+05 0.490
1.999 30.73 9.545 5.608 0.851 1.72E+05 0.495
2.015 31.18 10.46 5.660 0.924 1.89E+05 0.499
2.032 31.58 11.55 5.710 1.011 2.08E+05 0.504
2.049 31.91 12.89 5.759 1.119 2.32E+05 0.509
2.066 32.00 14.37 5.791 1.241 2.60E+05 0.514
2.083 31.84 16.14 5.811 1.389 2.93E+05 0.519
2.101 31.20 17.94 5.796 1.548 3.30E+05 0.523
2.119 29.97 19.55 5.734 1.705 3.66E+05 0.525
2.137 28.38 20.70 5.635 1.837 3.98E+05 0.524
2.156 26.78 21.26 5.521 1.925 4.21E+05 0.522
2.175 25.52 21.29 5.420 1.964 4.33E+05 0.519
2.194 24.66 21.27 5.349 1.988 4.42E+05 0.517
eV 10 1 102 n k (X (em· l ) R
2.213 24.01 21.40 5.300 2.019 4.53E+05 0.516
2.233 23.44 21.63 5.260 2.056 4.65E+05 0.515
2.254 22.88 22.01 5.226 2.106 4.81E+05 0.516
2.274 22.20 22.47 5.186 2.166 4.99E+05 0.517
2.295 21.35 23.03 5.136 2.242 5.22E+05 0.519
2.317 20.27 23.43 5.062 2.314 5.44E+05 0.519
2.339 18.92 23.58 4.957 2.378 5.64E+05 0.518
2.361 17.81 23.35 4.857 2.404 5.75E+05 0.515
2.384 16.79 22.96 4.756 2.414 5.83E+05 0.512
2.407 15.98 22.48 4.667 2.408 5.88E+05 0.508
2.43 15.35 22.00 4.592 2.395 5.90E+05 0.504
2.454 14.77 21.54 4.521 2.382 5.93E+05 0.500
2.479 14.29 21.10 4.460 2.366 5.95E+05 0.496
2.504 13.91 20.70 4.407 2.348 5.96E+05 0.493
2.53 13.57 20.32 4.359 2.331 5.98E+05 0.489
2.556 13.31 19.94 4.318 2.309 5.98E+05 0.486
2.582 13.01 19.58 4.273 2.291 6.00E+05 0.483
2.609 12.82 19.28 4.241 2.273 6.0IE+05 0.480
2.637 12.62 18.99 4.208 2.256 6.03E+05 0.477
2.666 12.50 18.69 4.182 2.234 6.04E+05 0.475
2.695 12.39 18.41 4.158 2.214 6.05E+05 0.472
2.724 12.31 18.17 4.138 2.195 6.06E+05 0.470
2.754 12.24 17.94 4.121 2.177 6.08E+05 0.468
2.767 12.21 17.86 4.114 2.171 6.09E+05 0.467
2.779 12.22 17.78 4.111 2.163 6.09E+05 0.466
2.792 12.21 17.71 4.106 2.157 6. 11E+05 0.465
2.804 12.22 17.65 4.104 2.150 6. 11E+05 0.465
2.817 12.23 17.58 4.102 2.143 6. 12E+05 0.464
2.83 12.25 17.52 4.100 2.136 6. 13E+05 0.464
2.843 12.24 17.47 4.097 2.132 6.15E+05 0.463
2.856 12.24 17.42 4.095 2.127 6. 16E+05 0.463
2.869 12.28 17.39 4.097 2.122 6. 17E+05 0.462
2.883 12.32 17.35 4.099 2.116 6. 18E+05 0.462
2.896 12.32 17.31 4.097 2.113 6.20E+05 0.462
2.91 12.36 17.31 4.101 2.111 6.23E+05 0.462
2.923 12.55 17.33 4.120 2.103 6.23E+05 0.462
2.937 12.60 17.34 4.125 2.102 6.26E+05 0.462
2.951 12.64 17.36 4.130 2.102 6.29E+05 0.463
2.965 12.70 17.40 4.138 2.102 6.32E+05 0.463
2.98 12.75 17.46 4.146 2.106 6.36E+05 0.464
2.994 12.82 17.52 4.155 2.108 6.40E+05 0.464
3.008 12.83 17.61 4.160 2.116 6.45E+05 0.465
3.023 12.88 17.69 4.169 2.122 6.50E+05 0.466
3.038 12.95 17.80 4.181 2.129 6.56E+05 0.467
3.053 13.00 17.95 4.193 2.140 6.62E+05 0.468
3.068 13.04 18.08 4.203 2.151 6.69E+05 0.470
3.083 13.08 18.25 4.215 2.165 6.77E+05 0.471
3.099 13.08 18.42 4.223 2.181 6.858+05 0.473
3.114 13.08 18.57 4.231 2.195 6.93E+05 0.474
3.13 13.01 18.78 4.234 2.218 7.04E+05 0.476
46 GROUP-IV SBMICONDUcrORS
Table AJ·2 Continued (Ge).

eV El E2 n k a (cm·1) R
3.146 12.96 18.98 4.239 2.239 7.14B+05 0.478
3.162 12.90 19.21 4.245 2.263 7.25B+05 0.480
3.178 12.82 19.41 4.247 2.285 7.36B+05 0.481
3.195 12.69 19.60 4.245 2.309 7.48B+05 0.483
3.211 12.56 19.78 4.242 2.332 7.59B+05 0.485
3.228 12.41 19.96 4.238 2.355 7.71B+05 0.486
3.245 12.32 20.13 4.238 2.375 7.81B+05 0.488
3.262 12.15 20.32 4.232 2.401 7.94B+05 0.489
3.279 12.02 20.50 4.230 2.423 8.05B+05 0.491
3.297 11.85 20.66 4.223 2.446 8. 18B+05 0.492
3.314 11.63 20.81 4.211 2.471 8.30B+05 0.494
3.332 11.43 20.95 4.201 2.494 8.42B+05 0.495
3.35 11.24 21.07 4.190 2.514 8.54B+05 0.496
3.368 11.09 21.20 4.184 2.533 8.65B+05 0.497
3.387 10.89 21.30 4.172 2.553 8.77B+05 0.498
3.405 10.71 21.39 4.161 2.570 8.87B+05 0.499
3.424 10.48 21.50 4.147 2.592 9.00B+05 0.501
3.443 10.31 21.59 4.137 2.609 9.11B+05 0.502
3.462 10.14 21.69 4.128 2.627 9.22B+05 0.503
3.482 9.962 21.78 4.118 2.645 9.34B+05 0.504
3.501 9.817 21.90 4.112 2.663 9.45B+05 0.505
3.521 9.690 22.01 4.107 2.679 9.56B+05 0.506
3.541 9.544 22.12 4.101 2.697 9.68B+05 0.507
3.562 9.338 22.26 4.091 2.720 9.82B+05 0.509
3.582 9.155 22.37 4.082 2.740 9.95B+05 0.510
3.603 9.056 22.52 4.082 2.758 1.01B+06 0.512
3.624 8.891 22.65 4.076 2.779 1.02B+06 0.513
3.646 8.689 22.79 4.067 2.802 1.04B+06 0.515
3.667 8.519 22.99 4.064 2.828 1.05B+06 0.517
3.689 8.312 23.14 4.056 2.853 1.07B+06 0.519
3.711 8.188 23.34 4.057 2.876 1.08B+06 0.521
3.733 7.937 23.50 4.046 2.904 1.10B+06 0.523
3.756 7.709 23.68 4.038 2.932 1.12B+06 0.525
3.779 7.520 23.89 4.035 2.960 1.13B+06 0.527
3.802 7.291 24.13 4.031 2.993 1.15B+06 0.529
3.826 7.098 24.39 4.031 3.025 1.17B+06 0.532
3.849 6.817 24.64 4.024 3.062 1.19B+06 0.535
3.873 6.555 24.90 4.019 3.098 1.22B+06 0.538
3.898 6.300 25.18 4.016 3.135 1.24B+06 0.541
3.922 5.960 25.50 4.009 3.180 1.26B+06 0.544
3.947 5.747 25.88 4.016 3.222 1.29E+06 0.548
3.973 5.368 26.25 4.010 3.273 1.32E+06 0.552
3.998 4.907 26.68 4.002 3.333 1.35E+06 0.557
4.024 4.398 27.14 3.993 3.398 1.39E+06 0.562
4.051 3.899 27.65 3.989 3.466 1.42E+06 0.568
4.077 3.350 28.23 3.986 3.541 1.46B+06 0.574
4.104 2.630 28.82 3.973 3.627 1.51E+06 0.581
4.132 1.782 29.48 3.957 3.725 1.56E+06 0.588
4.159 0.699 30.12 3.926 3.836 1.62B+06 0.597
4.187 -0.494 30.77 3.891 3.954 1.68E+06 0.607
eV £1 £2 n k a (cm· l ) R
4.216 -2.027 31.31 3.831 4.087 1.75E+06 0.617
4.245 -3.819 31.81 3.756 4.234 1.82E+06 0.629
4.274 -6.095 31.78 3.624 4.385 1.90E+06 0.643
4.304 -8.542 31.36 3.461 4.530 1.98E+06 0.658
4.334 -11.13 30.25 3.248 4.656 2.05E+06 0.673
4.364 -13.41 28.35 2.996 4.731 2.09E+06 0.688
4.395 -14.98 25.74 2.720 4.731 2. 11E+06 0.700
4.427 -15.67 23.03 2.468 4.665 2.09E+06 0.708
4.459 -15.54 20.57 2.263 4.545 2.05E+06 0.711
4.491 -15.03 18.59 2.107 4.412 2.0 1E+06 0.711
4.524 -14.43 17.16 1.999 4.292 1.97E+06 0.708
4.557 -13.79 15.87 1.902 4.172 1.93E+06 0.705
4.591 -13.16 14.99 1.842 4.069 1.89E+06 0.701
4.625 -12.64 14.18 1.783 3.977 1.86E+06 0.697
4.66 -12.12 13.40 1.724 3.885 1.84E+06 0.694
4.695 -11.65 12.82 1.684 3.806 1.81E+06 0.689
4.731 -11.19 12.28 1.647 3.729 1.798+06 0.685
4.767 -10.81 11.77 1.608 3.660 1.77E+06 0.682
4.804 -10.36 11.30 1.576 3.584 1.758+06 0.676
4.842 -9.989 10.93 1.552 3.521 1.738+06 0.672
4.88 -9.599 10.57 1.529 3.455 1.718+06 0.666
4.919 -9.248 10.23 1.507 3.394 1.698+06 0.661
4.958 -8.962 9.949 1.488 3.343 1.688+06 0.657
4.998 -8.559 9.642 1.472 3.275 1.668+06 0.650
5.039 -8.181 9.354 1.457 3.210 1.648+06 0.643
5.08 -7.764 9.041 1.441 3.137 1.62E+06 0.635
5.122 -7.408 8.801 1.431 3.075 1.608+06 0.627
5.165 -7.082 8.515 1.413 3.013 1.58E+06 0.621
5.208 -6.683 8.384 1.421 2.950 1.56E+06 0.610
5.252 -6.267 8.274 1.434 2.885 1.54E+06 0.597
5.297 -5.737 8.298 1.475 2.813 1.51E+06 0.580
5.4 -4.564 8.614 1.610 2.675 1.46E+06 0.539
5.5 -3.789 8.586 1.673 2.567 1.43E+06 0.513
5.75 -3.950 8.058 1.585 2.542 1.48E+06 0.518
6 -4.164 7.303 1.456 2.507 1.53E+06 0.527
7 -2.664 4.500 1.133 1.987 1.41E+06 0.467
8 -1.776 3.296 0.992 1.661 1.35E+06 0.410
9 -1.184 2.625 0.921 1.425 1.30E+06 0.356
10 -0.789 2.151 0.867 1.241 1.26E+06 0.310
11 -0.493 1.796 0.827 1.085 1.21E+06 0.267
12 -0.276 1.579 0.814 0.969 1.188+06 0.230
13 -0.099 1.342 0.790 0.850 1.12E+06 0.195
14 0.099 1.164 0.796 0.731 1.04E+06 0.153
15 0.237 0.947 0.779 0.608 9.25E+05 0.118
16 0.395 0.789 0.799 0.494 8.01E+05 0.082
17 0.493 0.691 0.819 0.422 7.27E+05 0.060
18 0.592 0.572 0.841 0.340 6.21E+05 0.040
19 0.691 0.513 0.881 0.291 5.61E+05 0.027
20 0.789 0.454 0.922 0.246 4.99E+05 0.018
21 0.888 0.414 0.967 0.214 4.578+05 0.012

eV £1 £2 n k a (em-I) R
22 0.179 3.99E+05
24 0.144 3.50E+05
26 0.110 2.90E+05
28 0.075 2. 12E+05
29 0.071 2.lOE+05
30 0.102 3.lOE+05
31 0.106 3.33E+05
32 0.100 3.24E+05
34 0.086 2.95E+05
36 0.074 2.70E+05
38 0.065 2.51E+05
40 0.060 2,45E+05
45 0.050 2.30E+05
50 0.045 2.29E+05
55 0.042 2.36E+05
60 0.039 2,40E+05
65 0.037 2,42E+05
70 0.035 2.50E+05
75 0.034 2.58E+05
80 0.033 2.64E+05
85 0.030 2.61E+05
90 0.028 2.55E+05
95 0.027 2.61E+05
97.5 0.027 2.62E+05
100 0.026 2.61E+05
105 0.024 2.52E+05
110 0.022 2.46E+05
115 0.021 2,40E+05
120 0.020 2,42E+05
122.5 0.020 2.51E+05
125 0.020 2.51E+05
127.5 0.019 2.51E+05
130 0.020 2.61E+05
135 0.018 2.42E+05
140 0.017 2,43E+05
145 0.016 2,40E+05
150 0.016 2.36E+05
155 0.015 2.31E+05
185 0.981 0.019 0.99050 0.0095 1.78E+05 4.56E-05
281.7 0.988 0.009 0.99385 0.0043 1.23E+05 1.42E-05
394.7 0.992 0.004 0.99590 0.0021 8.20E+04 5.27E-06
525.2 0.995 0.002 0.99741 0.0010 5.22E+04 1.92E-06
A4 GRAY TIN
(a-Sn)

The Sn element has two or perhaps three allotropic crystalline forms. On warming,
gray, or a-Sn, with the cubic, diamond structure, changes at 13.2°C into white, or 13-
Sn, the ordinary form of the metal (tetragonal structure). Early experiments on a-Sn
were performed on lumpy polycrystalline samples obtained by transforming I3-Sn at
temperatures below 13°C. In 1958 Ewald and Tufte [1] succeeded in preparing a-Sn
single crystals from a saturated mercury solution at -30°C. Reflectance measure-
ments on samples from these crystals were performed by Lindquist and Ewald [2].
A new method of growing high-quality a-Sn films has been reported more re-
cently [3]; films of a-Sn up to a thickness of 0.5 !!m were grown by MBE at room
temperature. Such MBE-grown films showed a much higher transformation tem-
perature than the crystals grown from Hg solution [4,5]. They are much flatter and
have larger areas than the surfaces of samples grown from the Hg solution. Thus, the
MBE-grown films are particularly suitable for optical measurements.

a-Sn is a zero band-gap semiconductor with degenerate valence and conduction
bands at the center of the BZ. We reproduce in Fig. A4-1 the electronic energy-band
structure of a-Sn as calculated by Brudevoll et al. [6] within the LDA including the
SO interaction as a perturbation.
The inverted band-structure model for a-Sn was fIrst given by Groves and Paul
[7]. In this model a-Sn is a semimetal in which the ordering of the bands at r is r7 +,
r 7-, rg+ in energy, with the Fermi level lying at rg+. The k·p interaction between the
r 7- and one of the rg+ levels gives the rg+ band positive curvature (Le., conduction
band in nature). This unique band structure has been supported by the subsequent
theoretical works by Pollak et al. [8], Chelikowsky and Cohen [9], and more re-
cently by Brudevoll et al [6].
Table A4-1 summarizes energies of the interband transitions in a-Sn [10,11 l.
Lindquist and Ewald [2] obtained from reflectivity measurements a gap of 0.085 e V,
which is now believed to be due to transitions from the r 25 • valence band to the Ll
conduction-band minimum [E gL , r25'(rg+)~Ll (Lt)]. The corresponding theoretical
value is 0.14 eV [9] or 0.175 eV [6], while recent experiments give a value of -D.1
49
10 •••• • •••••• : ••••• 1::: 1111 •••• ", •••••••••••••••••••••• "

!:t(' . .-::::...... :1:" •• •••••• ::::::~;i"
8 .":::. .... .......... ' .:<::::. . . . . .
..........'............................ ... ....'. ......:::>:::::::::::::,
. ...........,:..............:;.::::::.....
" . ...
6
4
.... ;;.,~.... ::.....'' '::..:'' ;;;;;;;;;::::,:.::;:.•.,,:,
-> 2
0 .. '
. . . . . . . . . . . . . ::~:::.::::::::::::;~:>
Q)
.........
>- -2 :
.......... .......
<!J L4,5v
a: -4 .............
~ -6 '. ........
W ........
-8 .. '
·:X;~~~::·· . · · · ·
-10
r+ .... .............................................
-12
L....6v
.:.:·········.
............. ~~ ...... ..
-14 a-Sn
-16
L r x K r
Figure A4-1 Electronic energy-band structure of a-Sn as calculated within the LDA in-
cluding the SO interaction as a perturbation. (From Brudevoll et al. [6].) The locations of
several interband transitions are included by the vertical arrows.
TABLE A4-1 Energies of the CPs and indirect gap (E/) in a-Sn at 300 K.
CPS,EgL eV
Eo 0.0
E La -0.1
g
El 1.28
El+~l 1.74
Eo' 2.38
Eo'+~o' 2.68
Ez 3.45
E 1' 4.6
E3 .5.15 b
ar25' (l8+)~Ll (L/) transitions.
bValue at 200 K.
A4 ORAY TIN (a-Sn) 51
eV (see Ref. [6]).

Band-structure calculations [6,8,9] indicate that the EI and EI+A I transitions in 0.-
Sn occur at the L point (EI: L4.s"~L6+' EI+AI: L6'~L/), or in a region between the
point k=(1t/3a)(l,l,l) and L point (EI: A4.s"~A/, EI+AI: A6-~A6+)' These CPs are of
the 3D MI (2D Mo) type. The Eo' and Eo'+Ao' transitions in the diamond-type semi-
conductors are believed to occur at the r point or in the A direction near the r point
[6,8,9]. The Ez CP in o.-Sn is thought to be associated with Xs~Xs transitions [6,12],
those in an extended region near U in the X-U-K plane [8,13], or with a plateau in
the transition energy near k=(21t/a)(O.75,O.25,O.25) [9]. The E I' transitions may occur
at the L point or in the A direction near the L point.

Lindquist and Ewald [2] determined the high-frequency (static) dielectric constant
of o.-Sn from IR reflectivity data measured at 300 K. [It should be noted that alt-
hough they stated "T=300 K," the actual temperature would be lower than 286
K=13°C (Le., lower than o.-Sn~~-Sn transformation temperature).] The single
crystals of o.-Sn used in this experiment were grown from the Hg solution and were
p and n types in electrical conductivity at 77 K. The p-type conductivity resulted
from diffusion of Hg into the crystals. According to the Drude-Zener theory, the
behavior of n2-Jil vs. ').} can be written as [2]
(A4.1)
where A=N.(m/mJ+Nh(m/mJ, me and mh are the effective masses of the electrons and
holes, respectively, rna is the free electron mass, and ').. is the wavelength in microns.
Thus, the high-frequency dielectric constant £~ and free-carrier concentration A can
be determined by plotting n2-Jil vs. ')..2. Figure A4-2 shows, as an example, the plotted
result for a sample with N.-Nd=2.3xlO I8 cm-3 [2]. This plot gives a straight line of
slope A=6.7xl019 cm-3 and intercept £~=26 on the vertical axis (')..2~0). Lindquist
and Ewald [2] obtained in this way from a few samples the average £~ value of 24.
Lavine and Ewald [14] obtained the same value (£~=24) from a transport analysis of
n-type (Sb-doped) o.-Sn. Most of the samples used in this study were prepared by
transforming cast, single-crystal ~-Sn wires to the gray phase.
The IR reflectivity spectra taken by Lindquist and Ewald [2] were in the 0.05-
1.24-eV (1-25-J..lm) region. The KK analysis yielded a set of the optical constants, n,
k, and a.. Hanyu [13] also performed reflectivity measurements on o.-Sn grown from
the Hg solution in the spectral region from 1.18 to 4.95 eV at 278 K (5°C). The re-
sultant optical-constant data revealed distinct structures at energies of the EI (1.25
eV), EI+AI (1.65 eV), Eo' (2.25 eV), E2 (3.02 eV), and EI' (4.20 eV) CPs.
More recently, Viiia et al. [11] have measured the real and imaginary parts of the
dielectric function of o.-Sn in the 1.2-5 .6-e V photon-energy region at temperatures
between 100 and 350 K using SE. The o.-Sn sample used was a 950-A-thick film
epitaxially-grown on an InSb(OOI) substrate by MBE. In addition to E I, EI+AI, Eo',
30~--~,----,~--~,--~,~--~,--~
a-Sn
10f-
Of-- -
-100~-1~6-o-2-6~o--3~6o--4~6~o--5~6o--6~OO
A 2 (,U m2)
Figure A4-2 n 2-Ji2 vs. ').} for a-Sn at 300 K. This plot gives a straight line of slope
A=6.7x10 19 cm-3 and intercept £~=26 on the vertical axis [see Eq. (A4.1)]. The average £~
value obtained in this way from a few samples is 24. (From Lindquist and Ewald [2].)
E2 , and E1', they found the E3 structure at 5.15 eV (T=200 K). This CP may corre-
spond to transitions between the upper valence and 3rd conduction bands in the
(110) plane [8].
Viiia et al. [11] have also reported the e(E) spectra for films transformed into
metallic f3-Sn after heating to 90°C. These e(E) spectra showed Drude dispersion
behavior typical of metals. A fact that the epitaxial film has much higher transfor-
mation (a-Sn-7f3-Sn) temperature (-70°C) than the bulk crystal (13.2°C) has been
clearly shown.
Optical reflectivity spectra at the plasma edge of both n- and p-type a-Sn have
been reported by Wagner and Ewald [15] and those in the interband transition region
by Cardona and Greenaway [12] and Higginbotham et al. [16]. Figure A4-3 (a)
shows the reflectivity spectrum of an p-type (p-3.12x10 19 cm-3 ) a-Sn measured by
Wagner and Ewald [15]. The solid line represents a best fit to the data using a clas-
sical free-carrier expression. The temperature dependence of free-carrier-minimum
wavelength /"'0 for a lightly dopedp-type sample is also shown in Fig. A4-3 (b). The-
se authors showed that values of carrier densities and mobilities obtained from elec-
trical measurements are in good agreement with those deduced from optical meas-
urements. ER study on a-Sn has also been performed by Cardona and coworkers
[17,18].
08 10 12 14 16 18 20 22 24 26
WAVELENGTH (microns)
...>-->--. 57 o
~
t;'~ 55 • -t- • •
1IJ.ci
...I ..
I::i~ •
a: 53 T ·25"1<
180 200 220 Figure A4-3 (a) Reflectivity sRectrum

WAVELENGTH of an p-type (p-3.12x10 19 cm') a-Sn.
(microns) The solid line represents a best fit to
the data using a classical free-carder
expression. (b) Temperature depen-
• • dence of free-carder-minimum wave-
• • length Ao for a lightly doped p-type
sample. (From Wagner and Ewald
[15].)
•
10
•
• (b)
•
'004 '008 ·012 ·016 ·020
lIT (OK-I)
The room-temperature optical constants, £=£I+i~, n*=n+ik, a, and R, listed in

Table A4-2 were taken for E~1.0 eV from Lindquist and Ewald [2] and for D-1.2
eV from Vifia et al. [11]. Lindquist and Ewald [2] used samples of different electri-
cal conductivity and reported their (n, k) values in graphic form. We have read, from
a graph, values for a sample with N.-Nd =2.3XIO I8 cm,3 (p type). These results nearly
overlap the data of Viiia et al. [11] at E-1.2 eV.

The (£\, ~), (n, k), n, and R values in Table A4-2 are plotted in Figs. A4-4-A4-7,
respectively. The vertical arrows in the figures indicate the positions of each CPo
The MDF analysis [10] suggested that the E\ and E\+A\ structures can be character-
ized by a 3D M\ (or 2D Mo) CP, the Eo' and Eo'+Ao' structures by a 3D Mo CP, the
E2 structure by a mixture of DHO (a broadened 2D M\ CP) and 2D M2 CP, and the
E\' structure by the DHO.
REFERENCES
1. A. W. Ewald and O. N. Tufte, l. Appl. Phys. 29, 1007 (1958).
2. R. E. Lindquist and A. W. Ewald, Phys. Rev. 135, A191 (1964).
3. R. F. C. Farrow, D. S. Robertson, G. M. Williams, A. G. Cullis, G. R. Jones, I.
M. Young, and P. N. J. Dennis, l. Cryst. G.rowth 54, 507 (1981).
4. J. Menendez and H. Hochst, Thin Solid Films 111,375 (1984).
5. J. L. Reno and L. L. Stephenson, Appl. Phys. Lett. 54, 2207 (1989).
6. T. Brudevoll, D. S. Citrin, M. Cardona, and N. E. Christensen, Phys. Rev. B 48,
8629 (1993).
7. S. Groves and W. Paul, Phys. Rev. Lett. 11, 194 (1963).
8. F. H. Pollak, M. Cardona, C. W. Higginbotham, F. Herman, and J. P. Van Dyke,
Phys. Rev. B 2, 352 (1970).
10. S. Adachi, l. Appl. Phys. 66,813 (1989).
11. L. Viiia, H. Hochst, and M. Cardona, Phys. Rev. B 31, 958 (1985).
12. M. Cardona and D. L. Greenaway, Phys. Rev. 125, 1291 (1962).
13. T. Hanyu, l. Phys. Soc. lpn. 36,1738 (1971).
14. C. F. Lavine and A. W. Ewald, l. Phys. Chem. Solids 32,1121 (1971).
15. R. J. Wagner and A. W. Ewald, l. Phys. Chem. Solids 32,697 (1971).
16. c. W. Higginbotham, F. H. Pollak, and M. Cardona, Solid State Commun. 5,
513 (1967).
17. M. Cardona, P. McElroy, F. H. Pollak, and K. L. Shaklee, Solid State Commun.
4,319 (1966).
18. M. Cardona, K. L. Shaklee, and F. H. Pollak, Phys. Rev. 154, 696 (1967).
A4 GRAY TIN (<x-Sn) ss
o
a-Sn
-10
o 12345 6
Photon energy (eV)
Figure A4·4 E1(E) and E2(E) spectra for <x-Sn at room temperature.
o 1 2 3 4 5 6
Photon energy (eV)
Figure A4-S n(E) and k(E) spectra for <x-Sn at room temperature.
S6 GROUP-IV SEMICONDUCTORS
a-Sn
10-1 100 10 1
Photon energy (e V)
Figure A4·6.o.(E) spectrum for a-Sn at room temperature.
0.7
a::
0.5
0.4
a-Sn
0.3
o 1 2 3 4 5 6
Photon energy (eV)
Figure A4·7 R(E) spectrum for a-Sn at room temperature.
Table A4-2 Optical constants of a-Sn at 300 K.

eV EI E2 n k a (em· l ) R
0.03 15.86 3.982 0.358
0.04 15.96 3.994 0.359
0.05 15.99 3.998 0.360
0.06 16.00 4.000 0.360
0.07 16.01 4.002 0.360
0.08 16.02 4.003 0.360
0.09 16.03 4.004 0.360
0.1 16.03 4.004 0.360
0.15 16.06 4.008 0.361
0.2 16.10 4.012 0.361
0.25 16.15 4.018 0.362
0.3 16.20 4.025 0.362
0.35 16.27 4.033 0.363
0.4 16.35 4.043 0.364
0.45 16.44 4.054 0.365
0.5 16.54 4.067 0.366
0.55 16.66 4.082 0.368
0.6 16.80 4.099 0.369
0.63 16.89 2.06E-05 4.110 2.51E-06 1.60E-01 0.370
0.64 16.92 5.20E-05 4.113 6.32E-06 4.lOE-01 0.371
0.65 16.95 1.77E-04 4.117 2. 15E-05 1.42E+OO 0.371
0.66 16.98 3.94E-04 4.121 4.78E-05 3.20E+00 0.371
0.67 17.02 7.41E-04 4.125 8.98E-05 6.lOE+00 0.372
0.68 17.05 1.14E-03 4.130 1.38E-04 9.50E+00 0.372
0.69 17.09 1.65E-03 4.134 2.00E-04 1.40E+01 0.373
0.7 17.12 2.22E-03 4.138 2.68E-04 1.90E+01 0.373
0.71 17.16 2.88E-03 4.143 3.47E-04 2.50E+01 0.373
0.72 17.20 3.52E-03 4.147 4.25E-04 3.10E+01 0.374
0.73 17.24 4.38E-03 4.152 5.27E-04 3.90E+01 0.374
0.74 17.28 5.54E-03 4.157 6.66E-04 5.00E+01 0.375
0.75 17.32 6.79E-03 4.162 8. 15E-04 6.20E+01 0.375
0.76 17.36 8.33E-03 4.167 9.99E-04 7.70E+01 0.376
0.77 17.40 0.011 4.172 1.28E-03 1.00E+02 0.376
0.78 17.45 0.014 4.177 1.67E-03 1.32E+02 0.377
0.79 17.49 0.020 4.182 2.37E-03 1.90E+02 0.377
0.8 17.54 0.036 4.188 4.32E-03 3.50E+02 0.378
0.85 17.79 0.578 4.218 0.068 5.90E+03 0.380
0.9 17.82 0.583 4.222 0.069 6.30E+03 0.381
1 18.12 0.739 4.258 0.087 8.80E+03 0.384
1.1 18.69 0.915 4.325 0.106 1.18E+04 0.390
1.2 19.39 1.108 4.405 0.126 1.53E+04 0.397
1.3 20.04 1.380 4.479 0.154 2.03E+04 0.404
1.4 20.74 1.798 4.558 0.197 2.80E+04 0.411
1.45 21.11 1.990 4.600 0.216 3. 18E+04 0.414
1.476 21.34 2.193 4.626 0.237 3.55E+04 0.416
1.484 21.36 2.221 4.628 0.240 3.61E+04 0.417
1.493 21.51 2.201 4.644 0.237 3.59E+04 0.418
1.502 21.56 2.204 4.649 0.237 3.61E+04 0.418
1.512 21.61 2.281 4.655 0.245 3.76E+04 0.419
1.521 21.74 2.363 4.670 0.253 3.90E+04 0.420
Table A4-2 Continued (a-Sn).

eV £1 £2 n k a (cm· 1) R
1.53 21.83 2.386 4.679 0.255 3.96E+04 0.421
1.54 21.94 2.364 4.691 0.252 3.93E+04 0.422
1.549 22.01 2.434 4.699 0.259 4.07E+04 0.422
1.559 22.11 2.477 4.709 0.263 4. 16E+04 0.423
1.569 22.19 2.510 4.718 0.266 4.23E+04 0.424
1.579 22.34 2.566 4.734 0.271 4.34E+04 0.425
1.589 22.39 2.616 4.740 0.276 4.45E+04 0.426
1.599 22.56 2.693 4.758 0.283 4.59E+04 0.427
1.61 22.66 2.756 4.769 0.289 4.72E+04 0.428
1.62 22.78 2.802 4.782 0.293 4.8IE+04 0.429
1.631 22.92 2.859 4.797 0.298 4.93E+04 0.431
1.642 23.06 2.935 4.812 0.305 5.08E+04 0.432
1.653 23.19 3.011 4.826 0.312 5.23E+04 0.433
1.664 23.37 3.091 4.845 0.319 5.38E+04 0.434
1.675 23.48 3.147 4.856 0.324 5.50E+04 0.435
1.686 23.67 3.238 4.876 0.332 5.67E+04 0.437
1.698 23.83 3.347 4.894 0.342 5.89E+04 0.438
1.71 24.02 3.419 4.913 0.348 6.03E+04 0.440
1.722 24.20 3.512 4.932 0.356 6.22E+04 0.441
1.734 24.31 3.629 4.944 0.367 6.45E+04 0.442
1.746 24.51 3.734 4.965 0.376 6.66E+04 0.444
1.758 24.70 3.848 4.985 0.386 6.88E+04 0.446
1.771 24.92 3.976 5.008 0.397 7. 13E+04 0.447
1.783 25.18 4.139 5.035 0.411 7.43E+04 0.450
1.796 25.42 4.291 5.060 0.424 7.72E+04 0.452
1.809 25.67 4.466 5.086 0.439 8.05E+04 0.454
1.823 25.95 4.644 5.114 0.454 8.39E+04 0.456
1.836 26.21 4.833 5.141 0.470 8.75E+04 0.458
1.85 26.52 5.070 5.173 0.490 9. 19E+04 0.460
1.864 26.81 5.286 5.203 0.508 9.60E+04 0.463
1.878 27.23 5.581 5.245 0.532 1.0IE+05 0.466
1.892 27.55 5.869 5.278 0.556 1.07E+05 0.469
1.907 27.94 6.222 5.318 0.585 1.13E+05 0.472
1.922 28.35 6.582 5.360 0.614 1.20E+05 0.475
1.937 28.77 7.035 5.403 0.651 1.28E+05 0.478
1.952 29.21 7.531 5.449 0.691 1.37E+05 0.482
1.967 29.65 8.065 5.494 0.734 1.46E+05 0.485
1.983 30.20 8.783 5.552 0.791 1.59E+05 0.490
1.999 30.73 9.545 5.608 0.851 1.72E+05 0.495
2.015 31.18 10.46 5.660 0.924 1.89E+05 0.499
2.032 31.58 11.55 5.710 1.011 2.08E+05 0.504
2.049 31.91 12.89 5.759 1.119 2.32E+05 0.509
2.066 32.00 14.37 5.791 1.241 2.60E+05 0.514
2.083 31.84 16.14 5.811 1.389 2.93E+05 0.519
2.101 31.20 17.94 5.796 1.548 3.30E+05 0.523
2.119 29.97 19.55 5.734 1.705 3.66E+05 0.525
2.137 28.38 20.70 5.635 1.837 3.98E+05 0.524
2.156 26.78 21.26 5.521 1.925 4.2IE+05 0.522
2.175 25.52 21.29 5.420 1.964 4.33E+05 0.519
2.194 24.66 21.27 5.349 1.988 4.42E+05 0.517
A4 ORAY TIN «X-Sn) 59
Table A4-2 Continued (a-SnJ.

eV £1 £2 n k a (cm· l ) R
2.213 24.01 21.40 5.300 2.019 4.53E+05 0.516
2.233 23.44 21.63 5.260 2.056 4.65E+05 0.515
2.254 22.88 22.01 5.226 2.106 4.81E+05 0.516
2.274 22.20 22.47 5.186 2.166 4.99E+05 0.517
2.295 21.35 23.03 5.136 2.242 5.22E+05 0.519
2.317 20.27 23.43 5.062 2.314 5.44E+05 0.519
2.339 18.92 23.58 4.957 2.378 5.64E+05 0.518
2.361 17.81 23.35 4.857 2.404 5.75E+05 0.515
2.384 16.79 22.96 4.756 2.414 5.83E+05 0.512
2.407 15.98 22.48 4.667 2.408 5.88E+05 0.508
2.43 15.35 22.00 4.592 2.395 5.90E+05 0.504
2.454 14.77 21.54 4.521 2.382 5.93E+05 0.500
2.479 14.29 21.10 4.460 2.366 5.95E+05 0.496
2.504 13.91 20.70 4.407 2.348 5.96E+05 0.493
2.53 13.57 20.32 4.359 2.331 5.98E+05 0.489
2.556 13.31 19.94 4.318 2.309 5.98E+05 0.486
2.582 13.01 19.58 4.273 2.291 6.00E+05 0.483
2.609 12.82 19.28 4.241 2.273 6.01E+05 0.480
2.637 12.62 18.99 4.208 2.256 6.03E+05 0.477
2.666 12.50 18.69 4.182 2.234 6.04E+05 0.475
2.695 12.39 18.41 4.158 2.214 6.05E+05 0.472
2.724 12.31 18.17 4.138 2.195 6.06E+05 0.470
2.754 12.24 17.94 4.121 2.177 6.08E+05 0.468
2.767 12.21 17.86 4.114 2.171 6.09E+05 0.467
2.779 12.22 17.78 4.111 2.163 6.09E+05 0.466
2.792 12.21 17.71 4.106 2.157 6. llE+05 0.465
2.804 12.22 17.65 4.104 2.150 6. 11E+05 0.465
2.817 12.23 17.58 4.102 2.143 6. 12E+05 0.464
2.83 12.25 17.52 4.100 2.136 6.13E+05 0.464
2.843 12.24 17.47 4.097 2.132 6.15E+05 0.463
2.856 12.24 17.42 4.095 2.127 6. 16E+05 0.463
2.869 12.28 17.39 4.097 2.122 6. 17E+05 0.462
2.883 12.32 17.35 4.099 2.116 6. 18E+05 0.462
2.896 12.32 17.31 4.097 2.113 6.20E+05 0.462
2.91 12.36 17.31 4.101 2.111 6.23E+05 0.462
2.923 12.55 17.33 4.120 2.103 6.23E+05 0.462
2.937 12.60 17.34 4.125 2.102 6.26E+05 0.462
2.951 12.64 17.36 4.130 2.102 6.29E+05 0.463
2.965 12.70 17.40 4.138 2.102 6.32E+05 0.463
2.98 12.75 17.46 4.146 2.106 6.36E+05 0.464
2.994 12.82 17.52 4.155 2.108 6.40E+05 0.464
3.008 12.83 17.61 4.160 2.116 6.45E+05 0.465
3.023 12.88 17.69 4.169 2.122 6.50E+05 0.466
3.038 12.95 17.80 4.181 2.129 6.56E+05 0.467
3.053 13.00 17.95 4.193 2.140 6.62E+05 0.468
3.068 13.04 18.08 4.203 2.151 6.69E+05 0.470
3.083 13.08 18.25 4.215 2.165 6.77E+05 0.471
3.099 13.08 18.42 4.223 2.181 6.85E+05 0.473
3.114 13.08 18.57 4.231 2.195 6.93E+05 0.474
3.13 13.01 18.78 4.234 2.218 7.04E+05 0.476
Table A4-2 Continued (a-SnJ.

eV £1 £2 n k a (cm'l) R
3.146 12.96 18.98 4.239 2.239 7. 14E+05 0.478
3.162 12.90 19.21 4.245 2.263 7.25E+05 0.480
3.178 12.82 19.41 4.247 2.285 7.36E+05 0.481
3.195 12.69 19.60 4.245 2.309 7.48E+05 0.483
3.211 12.56 19.78 4.242 2.332 7.59E+05 0.485
3.228 12.41 19.96 4.238 2.355 7.71E+05 0.486
3.245 12.32 20.13 4.238 2.375 7.8IE+05 0.488
3.262 12.15 20.32 4.232 2.401 7.94E+05 0.489
3.279 12.02 20.50 4.230 2.423 8.05E+05 0.491
3.297 11.85 20.66 4.223 2.446 8. 18E+05 0.492
3.314 11.63 20.81 4.211 2.471 8.30E+05 0.494
3.332 11.43 20.95 4.201 2.494 8.42E+05 0.495
3.35 11.24 21.07 4.190 2.514 8.54E+05 0.496
3.368 11.09 21.20 4.184 2.533 8.65E+05 0.497
3.387 10.89 21.30 4.172 2.553 8.77E+05 0.498
3.405 10.71 21.39 4.161 2.570 8.87E+05 0.499
3.424 10.48 21.50 4.147 2.592 9.00E+05 0.501
3.443 10.31 21.59 4.137 2.609 9. 11E+05 0.502
3.462 10.14 21.69 4.128 2.627 9.22E+05 0.503
3.482 9.962 21.78 4.118 2.645 9.34E+05 0.504
3.501 9.817 21.90 4.112 2.663 9.45E+05 0.505
3.521 9.690 22.01 4.107 2.679 9.56E+05 0.506
3.541 9.544 22.12 4.101 2.697 9.68E+05 0.507
3.562 9.338 22.26 4.091 2.720 9.82E+05 0.509
3.582 9.155 22.37 4.082 2.740 9.95E+05 0.510
3.603 9.056 22.52 4.082 2.758 1.0IE+06 0.512
3.624 8.891 22.65 4.076 2.779 1.02E+06 0.513
3.646 8.689 22.79 4.067 2.802 1.04E+06 0.515
3.667 8.519 22.99 4.064 2.828 1.05E+06 0.517
3.689 8.312 23.14 4.056 2.853 1.07E+06 0.519
3.711 8.188 23.34 4.057 2.876 1.08E+06 0.521
3.733 7.937 23.50 4.046 2.904 1.10E+06 0.523
3.756 7.709 23.68 4.038 2.932 1.l2E+06 0.525
3.779 7.520 23.89 4.035 2.960 1.l3E+06 0.527
3.802 7.291 24.13 4.031 2.993 1.l5E+06 0.529
3.826 7.098 24.39 4.031 3.025 1.17E+06 0.532
3.849 6.817 24.64 4.024 3.062 1.19E+06 0.535
3.873 6.555 24.90 4.019 3.098 1.22E+06 0.538
3.898 6.300 25.18 4.016 3.135 1.24E+06 0.541
3.922 5.960 25.50 4.009 3.180 1.26E+06 0.544
3.947 5.747 25.88 4.016 3.222 1.29E+06 0.548
3.973 5.368 26.25 4.010 3.273 1. 32E+06 0.552
3.998 4.907 26.68 4.002 3.333 1.35E+06 0.557
4.024 4.398 27.14 3.993 3.398 1.39E+06 0.562
4.051 3.899 27.65 3.989 3.466 1.42E+06 0.568
4.077 3.350 28.23 3.986 3.541 1.46E+06 0.574
4.104 2.630 28.82 3.973 3.627 1.51E+06 0.581
4.132 1.782 29.48 3.957 3.725 1.56E+06 0.588
4.159 0.699 30.12 3.926 3.836 1.62E+06 0.597
4.187 -0.494 30.77 3.891 3.954 1.68E+06 0.607
4.216 -2.027 31.31 3.831 4.087 1.75E+06 0.617
Table A4·2 Continued (a-Sn).

eV £\ £2 n k a (cm'\) R
4.245 -3.819 31.81 3.756 4.234 1. 82E+06 0.629
4.274 -6.095 31.78 3.624 4.385 1.90E+06 0.643
4.304 -8.542 31.36 3.461 4.530 1.98E+06 0.658
4.334 -11.13 30.25 3.248 4.656 2.05E+06 0.673
4.364 -13.41 28.35 2.996 4.731 2.09E+06 0.688
4.395 -14.98 25.74 2.720 4.731 2.l1E+06 0.700
4.427 -15.67 23.03 2.468 4.665 2.09E+06 0.708
4.459 -15.54 20.57 2.263 4.545 2.05E+06 0.711
4.491 -15.03 18.59 2.107 4.412 2.0IE+06 0.711
4.524 -14.43 17.16 1.999 4.292 1.97E+06 0.708
4.557 -13.79 15.87 1.902 4.172 1.93E+06 0.705
4.591 -13.16 14.99 1.842 4.069 1.89E+06 0.701
4.625 -12.64 14.18 1.783 3.977 1.86E+06 0.697
4.66 -12.12 13.40 1.724 3.885 1.84E+06 0.694
4.695 -11.65 12.82 1.684 3.806 1.81E+06 0.689
4.731 -11.19 12.28 1.647 3.729 1.79E+06 0.685
4.767 -10.81 11.77 1.608 3.660 1.77E+06 0.682
4.804 -10.36 11.30 1.576 3.584 1.75E+06 0.676
4.842 -9.989 10.93 1.552 3.521 1.73E+06 0.672
4.88 -9.599 10.57 1.529 3.455 1.71E+06 0.666
4.919 -9.248 10.23 1.507 3.394 1.69E+06 0.661
4.958 -8.962 9.949 1.488 3.343 1.68E+06 0.657
4.998 -8.559 9.642 1.472 3.275 1.66E+06 0.650
5.039 -8.181 9.354 1.457 3.210 1.64E+06 0.643
5.08 -7.764 9.041 1.441 3.137 1.62E+06 0.635
5.122 -7.408 8.801 1.431 3.075 1.60E+06 0.627
5.165 -7.082 8.515 1.413 3.013 1.58E+06 0.621
5.208 -6.683 8.384 1.421 2.950 1. 56E+06 0.610
5.252 -6.267 8.274 1.434 2.885 1.54E+06 0.597
5.297 -5.737 8.298 1.475 2.813 1.51E+06 0.580
5.4 -4.564 8.614 1.610 2.675 1.46E+06 0.539
5.5 -3.789 8.586 1.673 2.567 1.43E+06 0.513
5.75 -3.950 8.058 1.585 2.542 1.48E+06 0.518
6 -4.164 7.303 1.456 2.507 1.53E+06 0.527
7 -2.664 4.500 1.133 1.987 1.41E+06 0.467
8 -1.776 3.296 0.992 1.661 1.35E+06 0.410
9 -1.184 2.625 0.921 1.425 1.30E+06 0.356
10 -0.789 2.151 0.867 1.241 1. 26E+06 0.310
11 -0.493 1.796 0.827 1.085 1.2IE+06 0.267
12 -0.276 1.579 0.814 0.969 1.18E+06 0.230
13 -0.099 1.342 0.790 0.850 1.12E+06 0.195
14 0.099 1.164 0.796 0.731 1.04E+06 0.153
15 0.237 0.947 0.779 0.608 9.2SE+05 0.118
16 0.395 0.789 0.799 0.494 8.0IE+OS 0.082
17 0.493 0.691 0.819 0.422 7.27E+05 0.060
18 0.592 0.572 0.841 0.340 6.21E+05 0.040
19 0.691 0.513 0.881 0.291 5.6IE+05 0.027
20 0.789 0.454 0.922 0.246 4.99E+05 0.Q18
21 0.888 0.414 0.967 0.214 4.57E+05 0.012
22 0.179 3.99E+05
Table A4-2 Continued (a-Sn).

eV £1 £2 n k a (em·I ) R
24 0.144 3.S0E+OS
26 0.110 2.90E+OS
28 O.07S 2. 12E+OS
29 0.071 2.lOE+OS
30 0.102 3.lOE+OS
31 0.106 3.33E+OS
32 0.100 3.24E+OS
34 0.086 2.9SE+OS
36 0.074 2.70E+OS
38 0.06S 2.SlE+OS
40 0.060 2,4SE+OS
4S O.OSO 2.30E+OS
SO 0.04S 2.29E+OS
SS 0.042 2.36E+OS
60 0.039 2,40E+OS
65 0.037 2,42E+OS
70 0.035 2.S0E+OS
7S 0.034 2.S8E+OS
80 0.033 2.64E+OS
8S 0.030 2.61E+OS
90 0.028 2.5SE+05
9S 0.027 2.61E+OS
97.5 0.027 2.62E+OS
100 0.026 2.61E+OS
lOS 0.024 2.52E+OS
110 0.022 2,46E+OS
l1S 0.021 2,40E+OS
120 0.020 2,42E+OS
122.S 0.020 2.S1E+OS
12S 0.020 2.S1E+OS
127.5 0.019 2.S1E+OS
130 0.020 2.61E+OS
13S 0,018 2,42E+OS
140 0.017 2,43E+OS
14S 0.016 2,40E+OS
ISO 0.016 2.36E+OS
15S 0.015 2.31E+OS
18S 0.981 0.019 0.990S0 0.009S 1.78E+OS 4.S6E-OS
281.7 0.988 0.009 0.9938S 0.0043 1.23E+OS 1.42E-05
394.7 0.992 0.004 0.99S90 0.0021 8.20E+04 5.27E-06
S2S.2 0.99S 0.002 0.99741 0.0010 S.22E+04 1.92E-06
A5 CUBIC SILICON CARBIDE
(3C-SIC)
AS.1 GENERAL REMARKS

Silicon carbide (SiC) is the only known naturally stable group-IV semiconducting
compound crystallizing in a large number of polytypes [1]. The various types of SiC
differ one from another only by the order in which successive planes of Si (or C)
atoms are stacked along the c axis; one polytype is cubic (3C) while the remainder,
including two of the more frequently occurring forms, 6H and ISR, possess uniaxial
symmetry. Note that in the polytype name, the integer refers to the number of Si (C)
layers in the unit cell and C, H, and R indicate cubic, hexagonal, or rhombohedral
symmetry.
SiC is a promising material for electronic devices in high-temperature and high-
power applications because of its large thermal conductivity, high breakdown volt-
age, and of its outstanding mechanical and chemical stability. Because of its large
band gap, this compound is also an important material for optoelectronic device ap-
plications in the visible-UV region. Among all polytypes of SiC, 3C-SiC (~-SiC)
has the smallest forbidden-gap energy and highest electron mobility (10 3 cm2 .y-l·s·l,
Ref. [2]).
AS.2 ELECTRONIC ENERGY·BAND STRUCTURE

The electronic energy-band structure of 3C-SiC has been studied both theoretically
[3-1S] and experimentally [12-19]. Figure AS-l shows the calculated energy-band
structure of 3C-SiC by Hemstreet and Fong [4]. Table AS-l summarizes the princi-
pal band gaps at several high-symmetry points in the BZ of 3C-SiC.
The fundamental absorption edge of 3C-SiC may correspond to indirect transi-
tions from the highest valence band at the r point to the lowest conduction band at
X (EgX-2.42 eV [19], rI5~XI). The band-structure calculation also suggests the next
lowest-lying indirect gap E/at -S.6 eV (rI5~X3) [6,9,11].
The lowest-direct-gap edge is expected to occur at the X point (E2-6 eV [6,9-
11,13,14], X5~XI). Note that the lowest-direct-gap transitions in Si and Ge occur at
the r point [Si: r8+~r6· (Eo'), Ge: r8+~r7- (Eo)]. The direct transitions at the L point
in 3C-SiC is found to occur at 6.41 eV [13] or-8 eV [6,9,11,14] (E I , ~~LI). The
E I ' (L3~~) transitions may also occur at -10 eV [6,9,11]. The theoretical calcu-
lations [6,9,11,13-1S] predict a conduction-band X3~XI heteropolar splitting of
63
Figure AS·1 Electronic en-

ergy-band structure of 3C-
SiC. (From Hemstreet and
Fong [4].)
TABLE AS·1 Energies olthe interband transitions in 3C-SiC (in eV).

Calc.
CP (Transition) Lambrech et al. [14] Wenzien etat. [11] Exper.
E,x (['W·~XI) 2.59 2.417"
E2 (XS-tX1) 5.62 5.99 6.0,b6.0c
Eo (f'1S-t['I) 7.59 7.67
E 1(L3-tL1) 7.64 7.87 7.3 c
EI (A3-tA 1) 7.1 b
E2' (XS-tX3) 8.52 8.96 8.3 b
Eo' (['IS-t['IS) 8.74 8.72 7.75,b9.2c
EI' (L3-tL3) 9.36 9.87 9.7 b
OR. G. Humphreys et at., Solid State Commun. 39, 163(1981).

bB. E. Wheeler, Solid State Commun. 4,173(1966).
cS. Logothetidis and J. Petalas, J. Appt. Phys. 80, 1768(1996).
about 3 eV. Up to now, however, there exist strong ambiguities about the location
and nature of the peaks in the experimental optical spectra, as well as their assign-
ment to specific CPs in the k space [12-18] (see Table AS-I).
AS.3 OPTICAL CONSTANTS

The static dielectric constant E. of SiC was measured by Hofman et at. [20] at low
frequencies (1-100 kHz) and low temperatures (20, 77 K) using a bridge of the
AS CUBIC SILICON CARBIDE (3C-SiC) 6S
Schering type. Their data suggest that E,=10.2±O.2 at 20 K and lOA at 77 K, respec-
tively. Note that the 300-K E, values of C (diamond) and Si are 5.70 and 11.6, re-
spectively.
Because SiC is a heteropolar semiconductor, strong IR absorption band can be
observed. It is thus easily understand that E,;t:€~ for SiC. Applying the Lyddane-
Sachs-Teller relationship to the refractive-index data of Shaffer and Naum [21],
Patrick and Choyke [22] determined the static and high-frequency dielectric
constants of 3C-SiC to be E,=9.72 and E~=6.52, respectively. The similar analysis by
Pikhtin et at. [23] provided the values of E,=9.82 and E~=6.583 (T=297 K).
IR optical properties of 3C-SiC have been studied by Spitzer et at. [24] and more
recently by Moore et at. [25]. Films of 3C-SiC used in these experiments were
grown by the reaction of methane with a high-purity Si surface at 1300°C [24] and
deposited by CVD on Si substrates [25]. The reststrahlen parameters of 3C-SiC were
found to be essentially the same as those for the ordinary ray in the hexagonal SiC
[24]. Moore et at. [25] obtained the following dispersion equation including a real
contribution from the fundamental gap, ~:
E= E +~V2 + (E, -E~)(VTO)2 (A5.1)

- (VTO )2 - v 2 - 2ivr
where E,=9.52, E~=6.38, v To=796.l cm-I, v LO=973 cm-I, r=1 cm- I, and ~=1.8xlO-9
cm2 at T=300 K. (Note that there are some typos in the original expression of Eq.
(A5.l), see Eq. (7) of Ref. [25].) These authors also reported the 5-K dispersion
parameters that are E,=9.28, E_=6.22, v To=798 cm-I, v LO=975 cm- I, r=1.2 cm- I, and
~=4xlO-9 cm2.
The refractive-index dispersion in 3C-SiC has been determined by Shaffer and
Naum [21] at seven different wavelengths from 691 to 467 nm. The data were sim-
ply described by n(A.)=2.55378+3AI7xl04[A? (A. in nm).
Absorption coefficients at the fundamental absorption edge of cubic SiC have
been determined by Philipp [26] in the 2A-3.6-e V region and more recently by
Choyke et at. [27] in the 2.6-3A-eV region. These data are in reasonable agreement
with each other. The 3C-SiC films used in Ref. [27] were grown on Si(100) sub-
strates by way of CVD with thicknesses from 0.06 to 25 Ilm.
Reflectance spectra in the interband transition region of 3C-SiC have been meas-
ured by a number of authors [14-17] (see, e.g., Fig. A6-2 below). These authors,
however, did not perform KK analysis to obtain a set of the optical constants (n, k)
or (E I, Ez). Using SE, the optical constants of 3C-SiC in the visible-UV spectral re-
gion (1.5-9.5 eV) of 3C-SiC have been determined by Logothetidis and coworkers
[12,28]. The measured SE data showed CP features at energies -6.0, 7.3, and 9.2 eV.
These authors also reported that the n dispersion below the lowest direct gap (-6.0
eV) can be fitted by the Sellmeier equation [28]:
2 A~}
EI(A)=n(A) =1.0+ 2 2 (A5.2)
').;, -1.0
with A=5.721 and 1.0=0.1635 J.lm. We find that the above equation agrees with the
experimental data of Shaffer and Naum [21] within 1%.
We list in Table A5-2 the room-temperature values of e=el+i~, n*=n+ik, (X, and R
for 3C-SiC. A complete set of the optical constants for &;0.4 eV were calculated
from Eq. (A5.1) [25]. The refractive indices in the 0.8-4.7-eV region were obtained
from Eq. (AS.2) [28]. The absorption coefficients below 3.6 eV were taken from
Philipp [26]. The optical constants in the interband transition region (4.8::;E~9.5 eV)
were taken from Logothetidis and Petalas [28]. The absorption coefficients for
3.7~E~4.7 eV were obtained using an interpolation scheme between Philipp [26]
and Logothetidis- Petalas' data [28].
The (el' ~), (n, k), (x, and R values in Table AS-2 are graphed in Figs. AS-2-A5-5,
respectively. The vertical arrows in the figures indicate the position of the lowest
indirect gapE/.
REFERENCES
1. A. R. Verma and P. Krishna, Polymorphism and Polytypism in Crystals (Wiley,
New York, 1966).
2. W. E. Nelson, F. A. Halden, and A. Rosengreen, 1. Appl. Phys. 37, 333 (1966).
3. H.-G. Junginger and W. van Haeringen, Phys. Status Solidi 37, 709 (1970).
4. L. A. Hemstreet and C. Y. Fong, in Silicon Carbide-1973, edited by R. C. Mar-
shall, J. W. Faust, and C. E. Ryan (University of South Carolina Press, Colum-
bia, 1974), p. 284.
5. D. N. Talwar and Z. C. Feng, Phys. Rev. B 44,3191 (1991).
6. M. Rohlfing, P. KrUger, and J. Pollmann, Phys. Rev. B 48,17791 (1993).
7. C. H. Park, B.-H. Cheng, K.-H. Lee, and K. J. Chang, Phys. Rev. B 49, 4485
(1994).
8. P. Kiickell, B. Wenzien, and F. Bechstedt, Phys. Rev. B SO, 10761 (1994).
9. W. H. Backes, P. A. Bobbert, and W. van Haeringen, Phys. Rev. B 51, 4950
(1995).
10. V. I. Gavrilenko,Appl. Phys. Lett. 67, 16 (1995).
11. B. Wenzien, P. Kiickell, F. Bechstedt, and G. Gappellini, Phys. Rev. B 52,
10897 (1995).
12. S. Logothetidis, H. M. Polatoglou, J. Petalas, D. Fuchs, and R. L. Johnson,
Physica B 185, 389 (1993).
13. V. I. Gavrilenko, S. I. Frolov, and N. I. Klyui, Physica B 185, 394 (1993).
14. W. R. L. Lambrecht, B. Segall, W. Suttrop, M. Yoganathan, R. P. Devaty, W. J.
Choyke, J. A. Edmond, J. A. Powell, and M. Alouani, Appl. Phys. Lett. 63,
2747 (1993).
15. W. R. L. Lambrecht, B. Segall, M. Yoganathan, W. Suttrop, R. P. Devaty, W. J.
Choyke, J. A. Edmond, J. A. Powell, and M. Alouani, Phys. Rev. B SO, 10722
(1994).
AS CUBIC SILICON CARBIDE (3C-SiC) 67
16. B. E. Wheeler, Solid State Commun. 4,173 (1966).

17. M. L. Belle, N. K. Prokofeva, and M. B. Reifman, Sov. Phys. Semicond. 1, 315
(1967).
18. V. I. Gavrilenko, V. A. Zuev, G. A. Katrich, and D. T. Tarashchenko, Sov. Phys.
Semicond. 12,959 (1978).
19. R. G. Humphreys, D. Bimberg, and W. J. Choyke, Solid State Commun. 39,
163 (1981).
20. D. Hofman, J. A. Lely, and J. Volger, Physica 23, 236 (1957).
21. P. T. B. Shaffer and R. G. Naum, f. Opt. Soc. Am. 59, 1498 (1969).
22. L. Patrick and W. J. Choyke, Phys. Rev. B 2,2255 (1970).
23. A. N. Pikhtin, V. T. Prokopenko, V. S. Rondarev, and A. D. Yas'kov, Opt.
Spectrosc. 43,420 (1977).
24. W. G. Spitzer, D. A. Kleinman, and C. J. Frosch, Phys. Rev. 113, 133 (1959).
25. W. J. Moore, R. T. Holm, M. J. Yang, and J. A. Freitas, Jr., f. Appl. Phys. 78,
7255 (1995).
26. H. R. Philipp, Phys. Rev. 111,440 (1958).
27. W. C. Choyke, Z. C. Feng, and J. A. Powell, f. Appl. Phys. 64, 3163 (1988).
28. S. Logothetidis and J. Petalas, f. Appl. Phys. 80, 1768 (1996).
25~~~~~~~~~~~
20 3C-SiC
15
10
o
-5
Photon energy (eV)

Figure AS-2 f. 1(E) and f.2 (E) spectra for 3C-SiC at 300 K.
4 3C-SiC
c
2
X30,
,,
1 ,,
EgX "
1 /:'
o 2 4 6 8 10
Photon energy (eV)
Figure A5·3 neE) and k(E) spectra for 3C-SiC at 300 K.
WTol 3C-SiC
10-2 10-1 100 10 1

Photon energy (eV)
Figure A5·4 aCE) spectrum for 3C-SiC at 300 K.
AS CUBIC SILICON CARBIDE (3C-SiC) 69
0.7
0.6
3C-SiC
0.5
0.4
ex: EX
9
0.3 1
0.2
0.1
0 2 4 6 8 10
Photon energy (eV)
Figure AS-S R(E) spectrum for 3C-SiC at 300 K.
Table AS-2 Optical constants of 3C -SiC at 300 K.

eV tl t2 n k «(em· l ) R
0.Q1 9.553 0.00080 3.091 0.00013 1.34E-01 0.261
0.02 9.655 0.0017 3.107 0.00028 5.67E-01 0.263
0.03 9.840 0.0029 3.137 0.00046 1.41E+00 0.267
0.04 10.14 0.0046 3.184 0.00072 2.92E+00 0.272
0.05 10.60 0.0072 3.257 0.0011 5.63E+OO 0.281
0.06 11.36 0.010 3.371 0.0018 1.09E+01 0.294
0.07 12.70 0.020 3.564 0.0032 2.26E+01 0.316
0.08 15.54 0.050 3.942 0.0069 5.60E+01 0.354
0.09 25.05 0.250 5.005 0.025 2.32E+02 0.445
0.092 30.39 0.430 5.513 0.039 3.64E+02 0.480
0.094 40.29 0.880 6.348 0.069 6.58E+02 0.530
0.096 64.94 2.670 8.060 0.166 1.61E+03 0.607
0.097 99.08 6.790 9.960 0.341 3.35E+03 0.669
0.098 228.7 40.59 15.18 1.337 1.33E+04 0.770
0.0981 264.0 55.22 16.34 1.690 1.68E+04 0.785
0.0982 311.7 79.21 17.79 2.226 2.22E+04 0.801
0.0983 378.4 122.2 19.70 3.102 3.09E+04 0.820
0.0984 473.7 209.1 22.27 4.696 4.68E+04 0.842
0.0985 595.0 412.8 25.68 8.036 8.03E+04 0.868
0.0986 S65.8 90S.0 28.58 lS.84 l.S8E+OS 0.898
0.09862 478.9 1035 28.45 18.18 1.82E+OS 0.90S
0.09864 345.9 11S0 27.81 20.68 2.07E+05 0.912
0.09866 170.8 1228 26.S6 23.12 2.31E+05 0.918
0.09868 -27.98 1249 24.71 2S.27 2.53E+OS 0.924
0.0987 -221.5 1207 22.42 26.91 2.69E+05 0.930
0.09872 -383.3 1113 19.92 27.93 2.80E+05 0.935
Table AS-2 Continued (3C-SiC).

eV £1 £2 n k ex. (em· l ) R
0.09874 -500.0 990.1 17.45 28.37 2.84E+05 0.939
0.09876 -572.0 859.8 15.18 28.33 2.84E+05 0.943
0.09878 -607.7 736.4 13.17 27.95 2.80E+05 0.946
0.0988 -617.8 627.3 11.46 27.37 2.74E+05 0.949
0.0989 -523.0 294.0 6.204 23.70 2.38E+05 0.960
0.099 -410.4 160.0 3.879 20.63 2.07E+05 0.965
0.0992 -273.1 66.35 1.993 16.65 1.67E+05 0.972
0.0994 -200.9 35.64 1.252 14.23 1.43E+05 0.976
0.0996 -157.6 22.12 0.879 12.59 1.27E+05 0.978
0.0998 -129.1 15.03 0.660 11.38 1.15E+05 0.980
0.1 -108.9 10.87 0.520 10.45 1.06E+05 0.981
0.102 -39.40 1.740 0.138 6.278 6.49E+04 0.986
0.104 -21.94 0.680 0.072 4.685 4.94E+04 0.987
0.106 -14.01 0.360 0.048 3.743 4.02E+04 0.987
0.108 -9.482 0.220 0.036 3.080 3.37E+04 0.986
0.11 -6.556 0.150 0.029 2.561 2.86E+04 0.985
0.12 -0.175 0.040 0.050 0.421 5. 12E+03 0.845
0.14 3.282 0.010 1.812 0.0030 4.27E+Ol 0.083
0.16 4.456 0.0048 2.111 0.0011 1.85E+OI 0.128
0.18 5.035 0.0027 2.244 0.00059 1.08E+OI 0.147
0.2 5.374 0.0017 2.318 0.00036 7.24E+00 0.158
0.22 5.595 0.0011 2.365 0.00024 5.26E+00 0.165
0.24 5.748 0.00079 2.397 0.00017 4.03E+00 0.169
0.26 5.860 0.00059 2.421 0.00012 3.20E+00 0.172
0.28 5.944 0.00045 2.438 0.00009 2.62E+00 0.175
0.3 6.010 0.00035 2.451 0.00007 2. 19E+00 0.177
0.4 6.195 0.00013 2.489 0.00003 1.09E+00 0.182
0.8 6.785 2.605 0.198
1 6.822 2.612 0.199
1.2 6.868 2.621 0.200
1.4 6.923 2.631 0.202
1.6 6.988 2.643 0.203
1.8 7.063 2.658 0.205
2 7.149 2.674 0.208
2.2 7.247 2.692 0.210
2.4 7.358 0.00020 2.713 0.000030 7.50E+00 0.213
2.5 7.419 0.00070 2.724 0.00013 3.40E+Ol 0.214
2.6 7.484 0.0020 2.736 0.00036 9.50E+Ol 0.216
2.7 7.552 0.0033 2.748 0.00060 1.65E+02 0.218
2.8 7.625 0.0051 2.761 0.00090 2.60E+02 0.219
2.9 7.702 0.0072 2.775 0.0013 3.80E+02 0.221
3 7.783 0.010 2.790 0.0017 5.30E+02 0.223
3.1 7.870 0.012 2.805 0.0022 7.00E+02 0.225
3.2 7.961 0.Q15 2.822 0.0027 8.80E+02 0.227
3.3 8.058 0.019 2.839 0.0033 1.12E+03 0.229
3.4 8.161 0.024 2.857 0.0042 1.45E+03 0.232
3.5 8.271 0.029 2.876 0.0051 1.80E+03 0.234
3.6 8.387 0.038 2.896 0.0066 2.40E+03 0.237
3.7 8.510 0.050 2.917 0.0085 3.20E+03 0.240
3.8 8.641 0.067 2.940 0.011 4.40E+03 0.242
AS CUBIC Sll..ICON CARBIDE (3C-SiC) 71

eV £1 £2 n k a (em") R
3.9 8.780 0.093 2.963 0.016 6.20E+03 0.245
4 8.928 0.128 2.988 0.021 8.70E+03 0.249
4.1 9.086 0.174 3.014 0.029 1.20E+04 0.252
4.2 9.255 0.257 3.042 0.042 1.80E+04 0.255
4.3 9.435 0.380 3.072 0.062 2.70E+04 0.259
4.4 9.627 0.556 3.103 0.090 4.00E+04 0.263
4.5 9.833 0.760 3.138 0.121 5.52E+04 0.268
4.6 10.06 1.010 3.175 0.159 9.00E+04 0.272
4.7 10.29 1.285 3.214 0.200 1.30E+05 0.278
4.8 10.63 1.563 3.269 0.239 1.59E+05 0.285
4.9 10.90 1.884 3.313 0.284 1.72E+05 0.291
5 11.19 2.228 3.361 0.331 1.88E+05 0.297
5.1 11.51 2.600 3.414 0.381 2.10E+05 0.304
5.2 11.80 3.037 3.463 0.439 2.31E+05 0.311
5.3 12.19 3.508 3.527 0.497 2.67E+05 0.320
5.4 12.66 4.064 3.603 0.564 3.09E+05 0.330
5.5 13.16 4.749 3.684 0.645 3.59E+05 0.341
5.6 13.56 5.401 3.752 0.720 4.09E+05 0.350
5.7 14.01 6.610 3.841 0.860 4.97E+05 0.364
5.8 13.97 7.775 3.870 1.005 5.91E+05 0.374
5.9 13.24 9.198 3.832 1.200 7. 18E+05 0.382
6 12.19 10.16 3.746 1.356 8.25E+05 0.385
6.1 11.80 10.32 3.706 1.392 8.61E+05 0.385
6.2 11.64 10.61 3.700 1.434 9.01E+05 0.387
6.3 11.49 11.23 3.712 1.513 9.66E+05 0.394
6.4 11.29 12.00 3.726 1.610 1.04E+06 0.402
6.5 11.02 12.88 3.739 1.722 1.13E+06 0.412
6.6 10.59 13.88 3.745 1.854 1.24E+06 0.423
6.7 9.989 15.04 3.744 2.008 1.36E+06 0.436
6.8 9.176 16.09 3.721 2.161 1.49E+06 0.448
6.9 8.128 17.03 3.674 2.317 1.62E+06 0.460
7 6.802 17.86 3.600 2.481 1.76E+06 0.473
7.1 5.005 18.50 3.477 2.661 1.92E+06 0.487
7.2 3.465 18.82 3.362 2.800 2.04E+06 0.499
7.3 1.765 19.04 3.231 2.946 2. 18E+06 0.514
7.4 -0.235 18.65 3.035 3.073 2.31E+06 0.528
7.5 -2.610 17.60 2.756 3.194 2.43E+06 0.547
7.6 -4.492 15.96 2.458 3.246 2.50E+06 0.563
7.7 -5.604 13.88 2.164 3.207 2.50E+06 0.574
7.8 -5.925 11.91 1.921 3.101 2.45E+06 0.577
7.9 -5.540 10.44 1.772 2.946 2.36E+06 0.567
8 -5.155 9.412 1.670 2.818 2.29E+06 0.557
8.1 -4.813 8.513 1.576 2.701 2.22E+06 0.548
8.2 -4.449 7.701 1.491 2.583 2. 15E+06 0.537
8.3 -4.021 6.952 1.416 2.455 2.07E+06 0.523
8.4 -3.529 6.342 1.365 2.322 1.98E+06 0.503
8.5 -2.909 6.011 1.373 2.189 1.89E+06 0.473
8.6 -2.353 5.775 1.393 2.072 1.81E+06 0.444
8.7 -1.818 5.733 1.448 1.979 1.75E+06 0.415
8.8 -1.209 5.775 1.532 1.885 1.68E+06 0.385

eV 10 1 102 n k a (cm· 1) R
8.9 -0.856 5.947 1.605 1.852 1.67E+06 0.372
9 -0.706 6.374 1.689 1,887 1.72E+06 0.374
9.1 -0.984 6.631 1.691 1.961 1.81E+06 0.390
9.2 -1.262 6.652 1.660 2.004 1.87E+06 0.401
9.3 -1.497 6.631 1.628 2.037 1.92E+06 0.411
9.4 -1.968 6.439 1.543 2.086 1.99E+06 0.429
9.5 -2.310 6.032 1.440 2.094 2.02E+06 0.443
A6 HEXAGONAL SILICON CARBIDE
(2H-, 4H-, and 6H-SIC)

Of all the polytypes, 6H is by far the most commonly occurring modification in
commercial SiC. The next most common polytypes are 15R and 4H, respectively.
SiC also crystallizes in the wurtzite structure (2H-SiC). Assuming that the 3C and
2H structures are extremes in the parameter describing the percentage of hexagonal
close packing (often called hexagonality) with 0 and 100%, respectively, we get the
hexagonal nature of 33% for 6H structure, 40% for 15R structure, and 50% for 4H
structure. The hexagonal and rhombohedral polytypes have a sixhold symmetry axis
along the stacking direction (c axis), and thus these crystals present an anisotropic
(uniaxial) behavior of physical properties.

Figure A6-1 shows the electronic energy-band structures of (a) 2H-SiC, (b) 4H-SiC,
and (c) 6H-SiC as obtained within the DFT-LDA calculations by Kackell et al. [1].
The polytypes, 2H-6H, consist of identical layers, whose stacking sequences differ,
and can be regarded as natural superlattices (4H- and 6H-SiC). The artificial semi-
conductor superlattices, like Si/Ge and GaAs/AIGaAs suprelattices, are character-
ized by band folding, band offset, and carrier confinement. We note, however, that
the band offset is absent in 4H- and 6H-SiC. This is because there is no interface
effect on the charge density and thus the stacking layer cannot be actually distin-
guished. As a result, no carrier-confinement effect is expected in 4H- and 6H-SiC.
Only the band-folding effect is, therefore, important in this type of superlattices.
The hexagonal SiC polytypes are all indirect-band-gap semiconductors. The va-
lence-band maximum at the r point is split into a twofold and a onefold state by
hexagonal crystal field. The conduction-band minimum located at the X point in 3C-
SiC changes to the L-M line in 6H or at the M point in 4H, and then to the K point
in 2H-SiC. However, in the 6H-SiC its exact position on the L-M line is under dis-
cussion (see Refs. [2,3]). We summarize in Table A6-1 the lowest-indirect-exciton
gaps obtained experimentally for some hexagonal and rhombohedral SiC polytypes
[4], together with their corresponding hexagonalities. It can be seen from this table
that the lowest indirect gap increases with increasing hexagonality. This famous re-
lationship had been found in 1964 by Choyke, Hamilton, and Patrick [5,6].
73
2H 4H
6H
Figure A6·1 Electronic energy-band structures of (a) 2H-SiC, (b) 4H-SiC, and (c) 6H-SiC
as obtained within the Off-LOA calculations. (From Klickell et al. [1].)
TABLE A6·1 Lowest-indirect-exciton gap and hexagonality for some SiC polytypes.
PolytyPe Exciton Gap (eV) Hexagonality (%)
3C 2.390 o
24R 2.728 25
8H 2.80 25
21R 2.853 29
6H 3.023 33
15R 2.986 40
4H 3.265 50
2H 3.330 100
Figure A6-2 shows the theoretical reflectivity spectra for 2H-, 4H-, 6H-, and 3C-
SiC polytypes as calculated by Lambrecht et al. [7]. The band structures were cal-
culated by means of the scalar-relativistic LMTO method. The imaginary part of the
dielectric function ~(E) was derived at the random-phase approximation level using
the muffin-tin-orbital basis set. The real part £\(E) was then obtained from ~(E) by
means of the KK transformation. No lifetime broadening effect was taken into con-
sideration in the calculation. The experimental data for 4H, 15R, 6H, and 3C
polytypes measured by these authors are also shown in Fig. A6-2 by the solid lines.
In Fig. A6-2, the overall experimental features are broader than the theoretical
A6 HEXAGONAL Sll..rCON CARBIDE (2H-, 4H-, and 6H-SiC) 75
0.52H RB
f \.....~\ C
0.4 i \ f\
A/ \ t j ....·,
0.3 ............../.... ..
0.2 /-++...,............I-j-HH+!-++++!-++++f++.++1
0.5 4H D
0.4
0.3
0.2 t+<-~H-+-I-j-HH+!-++++!-++++f++.++i
~
:> 0.5 15R
i= B C
~ 0.4
w 0.3
CC
0.2 1++1+f-.........1-j-HH+!-++++!-++++f++.++l
Figure A6-2 Reflectivity spectra for 2H-, 4H-,
15R-, 6H-, and 3C-SiC polytypes: dotted lines
0.5 6H (theory), solid lines (experiment at 300 K).
0.4
C The data for 2H-, 4H-, 15R-, and 6H-SiC cor-
respond to Eloc. Note that no lifetime bro-
0.3 adening effect was taken into consideration in
0.2 t+<-~.........l-j-HH+!-++++I-++++f++.++l
the theory. (From Lambrecht et al. [7].)
0.5 3C
0.4
0.3
......,.
02 ~~~~~~~~~~
4 5 6 7 8 9 10
PHOTON ENERGY (eV)
ones. Nevertheless, a clear correspondence can be established between all main

features in the experiment and calculation. The main peak of 3C-SiC (B) is centered
at 7.8 eV (see also Fig. A5-5). A peak near 8 eV exists in all polytypes considered. It
is flattened out in 4H and 6H and shifted to slightly lower energy in 15R. It is con-
sidered to mostly correspond to transitions from the upper two valence bands to the
lowest conduction band (Eo or E 1) in the case of 3C-SiC and to similar transitions of
the appropriately folded bands in the smaller BZs of the hexagonal polytypes. A
second peak (C) appears at higher energy in the calculated spectra of all polytypes.
In 3C-SiC, this peak may correspond to transitions from the upper valence band to
the second conduction band (Eo', E 1 ', or E2 ').
The main difference between the cubic and all other polytypes consists of the
features (D, D') centered near 7 eV. This feature is strongest in 2H, sharpest in 4H,
split into two peaks (D, D') in both 15R and 6H, and absent in 3C. The peak D in
2H-SiC was found to correspond to an extended region of the nearly parallel band in
the r -K-X plane near K [7]. Similar flat interband-transition curves also exist in 4H
and 6H along the r -K line. This axis of the hexagonal BZ corresponds to the ~r
K and Q=L-W lines of cubic SiC which are both folded onto the T=r-K line of the
hexagonal BZ.

(a) 2H-SiC-There are very few reports on the optical constants of2H- and 4H-SiC
polytypes [7-10]. Powell [8] reported the n data for 2H-SiC measured by the method
of minimum deviation over the wavelength range 435.8-650.9 nm. The crystals used
were grown by the reduction of methyltrichlorosilane (CH3SiCI3) at 1375°C. They
were in the form of needles about 0,4 mm in diameter by 2 mm long, and their e axis
was in the direction of the needle's length. A curve fit of the measured n data to the
Cauchy dispersion equation
B C
n=A+-+- (A6.l)
t,} ')..4
yielded A=2.5513, B=2.585x1O\ and C=8.928x108 for the ordinary ray (El..e) and
A=2.6161, B=2.823xlO\ and C=11,490x108 for the extraordinary ray (Elle) when ')..
is expressed in nm. The n data for 2H-SiC, together with those for 3C-, 4H-, 6H-,
and 15R-SiC, are plotted in Fig. A6-3 [8].
2.800
2.180
2.160
2.140
>< 2.120
Figure A6-3 Refractive-
Q>
'C
oS
~ 2.100 index dispersion for SiC
~ polytypes. Data included
Ci for 2H and 6H curves only.
'" 2.680 The 3C (P), 4H, and 15R
curves are from Shaffer [9].
2.660 Diamonds, Thibault (see
Ref. [8]); squares, Shaffer
2.640 [9]; circles, Powell [8].
(From Powell [8].)
2.620 IN.
2.600
400
Wavelength. nm
A6 HEXAGONAL SnJCON CARBIDE (2H-, 4H-, and 6H-SiC) 77
.09
/'
/'
/'
.08 /'
/'
/' 0
.07 /' 2H
/'
/'
/'
Q) .06 /'
o 4H /'
C
~ .OS
C
~ .04 ~
~ 21R
39R
/' 24R
iIi /'
.03 /'
/'
/'
.02
.01
r~lcublcl
"",'
.1 .3.4.5.6
Hexagonality
Figure A6-4 Birefringence vs. hexagonality for SiC polytypes at A.=584 nm. (From Powell
[8].)
Figure A6-4 plots the birefringence, dn=n.(E II c)-no(E.Lc), vs. hexagonal fraction
(hexagonality) for some SiC polytypes at 584 nm [8]. There have been attempts to
relate the birefringence of SiC to the crystal structure [8,9,11]. In the structurally
analogous system of ZnS polytypes, the birefringence is a linear function of the
hexagonal fraction h [12]. The situation for SiC is not so simple. As seen in Fig. A6-
4, the birefringence is a linear function of h for values of h between 0.25 and 0.50.
However, the values for 3C-SiC (h=O) and 2H-SiC (h=1.0) are considerably below
this line.
We list in Table A6-2 the ~\, n, and R [=(n-l)2/(n+l)2] values for 2H-SiC. They
were calculated from Eq. (A6.1) [8]. Limiting A-too in Eq. (A6.1), we obtain the
high-frequency dielectric constant £_=6.51 for E..Lc and 6.84 for Ellc.
Table A6-2 Optical constants of2H-SiC at 300 K.

E.lc Elic
eV £1 n R £1 n R
1.904 6.8503 2.6173 0.200 7.2318 2.6892 0.210
2.061 6.9143 2.6295 0.202 7.3057 2.7029 0.211
2.249 7.0018 2.6461 0.204 7.4066 2.7215 0.214
2.270 7.0119 2.6480 0.204 7.4185 2.7237 0.214
2.476 7.1214 2.6686 0.207 7.5460 2.7470 0.217
2.753 7.2927 2.7005 0.211 7.7468 2.7833 0.222
2.844 7.3555 2.7121 0.213 7.8210 2.7966 0.224
(b) 4H-SiC-The n dispersion data for 4H-SiC were reported by Shaffer [9] (see
Figs. A6-3 and A6-4). The crystals were grown by the sublimation method. The ex-
perimental n data were fitted to the Cauchy dispersion formula of Eq. (A6.1) with
C=O. The fit-determined dispersion parameters were: A=2.561O and B=3.40xI04 for
E-Lc; A=2.6041 and B=3.75xI04 for Ellc.
Biedermann [10] studied the optical absorption properties of some SiC polytypes,
including 4H-SiC, in the wavelength range 0.35 to 2.5 Ilm with light polarization
perpendicular and parallel to the c axis. He observed in N-doped n-type samples
(n-5xI0 18 cm- 3) the main absorption bands in the 0.6-3-eV region that were strongly
dependent upon the polytype and light polarization. These bands were assumed to be
due to electron excitation from the conduction-band minimum to other sites of in-
creased DOS in the higher, empty band (namely, due to the intracondution-band ab-
sorption). No comparable absorption bands were observed in AI-doped, p-type sam-
ples. The absorption coefficients in the p-type samples increased continually from
the minimum near the band edge towards longer wavelengths, the dependence being
given approximately by k_').,!·5 for the ordinary ray and k_')...O.9 for the extraordinary
ray.
Sridhara et al. [13] have also reported the absorption coefficients of 4H-SiC
measured at 300 K, with light propagating along the c axis, from 3900 to 3350 A.
The sample was n type with an impurity concentration in the high 1014 cm,3. It was
carefully polished to a thickness of 64 Ilm. By using the known shift of the band gap
with temperature, they have also given the absorption values at 2 K.
The fundamental reflectivity spectrum in the interband transition region of 4H-
SiC was reported by Lambrecht et al. [7] (see Fig. A6-2). We note, however, that the
reflectivity peak value at -7 eV for 3C-SiC obtained by these authors is considera-
bly smaller than the recent SE result (cf. Fig. A5-5).
More recently, Zollner and Hilifker [14] have reported the SE e(E) spectra of 4H-
SiC from 0.72 to 6.6 eV. The sample studied was obtained commercially from Cree
Research. It was not intentionally doped and single-side polished (Si-terminated).
The sample was measured as received without surface preparation. The SE data re-
vealed CP near 5.53 eV.
Table A6-3 lists the optical-constant data for 4H-SiC. They were obtained for
E~2.654 eV from Shaffer [9] and for F23 eV from Zollner and Hilifker [14]. These
data yield the high-frequency dielectric constants e_=6.56 for E-Lc and 6.78 for E II
c [A.~oo in Eq. (A6.1)].
Table A6-3 Optical constants of4H-SiC at 300 K.
EJ.c Ellc
eV £1 £2 n k R £1 n R
1.794 6.9353 2.6335 0.202 7.2006 2.6834 0.209
2.012 7.0267 2.6508 0.204 7.3078 2.7033 0.212
2.104 7.0692 2.6588 0.206 7.3544 2.7119 0.213
2.182 7.1049 2.6655 0.206 7.3940 2.7192 0.214
A6 HEXAGONAL SILICON CARBIDE (2H-, 4H-, and 6H-SiC) 79
Table A6-3 Continued (4H-SiC).

E.lc Elle
eV £1 £2 n k R £1 n R
2.407 7.2259 2.6881 0.210 7.5350 2.7450 0.217
2.489 7.2792 2.6980 0.211 7.5889 2.7548 0.218
2.654 7.3908 2.7186 0.214 7.7123 2.7771 0.221
3 7.59 2.75
3.1 7.68 2.77
3.2 7.70 2.77
3.3 7.87 2.81
3.4 7.98 2.82
3.5 8.10 0.01 2.85 0.0018 0.996
3.6 8.22 0.02 2.87 0.0035 0.991
3.7 8.36 0.03 2.89 0.0052 0.987
3.8 8.50 0.04 2.92 0.0069 0.983
3.9 8.65 0.05 2.94 0.0085 0.979
4 8.81 0.08 2.97 0.013 0.968
4.1 8.99 0.09 3.00 0.015 0.965
4.2 9.18 0.12 3.03 0.020 0.954
4.3 9.40 0.14 3.07 0.023 0.948
4.4 9.62 0.19 3.10 0.031 0.931
4.5 9.87 0.23 3.14 0.037 0.919
4.6 10.1 0.31 3.18 0.049 0.895
4.7 10.4 0.35 3.23 0.054 0.885
4.8 10.7 0.45 3.27 0.069 0.859
4.9 11.1 0.54 3.33 0.081 0.840
5 11.4 0.68 3.38 0.101 0.809
5.1 11.8 0.80 3.44 0.116 0.787
5.2 12.3 0.96 3.51 0.137 0.762
5.3 12.8 1.19 3.58 0.166 0.730
5.4 13.4 1.53 3.67 0.209 0.692
5.5 13.9 2.08 3.74 0.278 0.645
5.6 14.4 2.73 3.81 0.358 0.616
5.7 14.7 3.24 3.86 0.420 0.606
5.8 15.2 3.78 3.93 0.481 0.605
5.9 15.6 4.41 3.99 0.553 0.610
6 16.1 5.10 4.06 0.628 0.620
6.1 16.6 5.92 4.14 0.716 0.636
6.2 17.3 6.87 4.24 0.811 0.656
6.3 17.8 8.25 4.33 0.954 0.684
6.4 18.3 9.69 4.42 1.10 0.710
6.5 18.6 11.3 4.49 1.26 0.736
(c) 6H-SiC-The reported £_ data for 6H-SiC have yielded widely different values
ranging from 6.17 to 6.7 for E.lc and from 6.49 to 6.72 for Ellc [15]. Pikhtin et al.
[16] measured the n data in the 0.4-50-Jlm wavelength region at 297 and 105 K and
estimated from their data the static and high-frequency dielectric constants to be
£,=9.66 (9.64) and £.=6.520 (6.509) for E.lc and £.=10.09 (10.01) and £.=6.742
(6.692) for Ellc at 297 K (l05 K).
IR optical properties of 6H-SiC have been studied by Spitzer et al. [17] and more
recently by Engerlbrecht and Helbig [18]. The samples used by Engerlbrecht and
Helbig [18] were cut from boules grown by a modified Lely method (n=0.5-
1.0xt0 17 cm-3). The measured spectra were fitted to the classical Lorentz oscillator
model. The number of the Lorentz oscillators required for this fit was one for E.1.e
and five for Elle: four extra oscillators for Elle correspond to two weak one-phonon
absorption lines in the reststrahlen band and two weak absorption lines at longer
wavelengths. Spitzer et al. [17] reported additional, but only one weak absorption
line in the reststrahlen band for Elle. The reststrahlen data of Engerlbrecht and
Helbig [18] yielded the €~ values of 6.17 and 6.49 for EJ.e and Elle, respectively,
while Spitzer et al. [17] obtained the €~ value of 6.7 both for EJ.e and Elle.
The n dispersion in 6H-SiC has been studied by many authors [8,9,16,19,20].
Like 2H- and 4H-SiC, the ordinary values no (EJ.e) are usually smaller than the ex-
traordinary ones no (Elle) at the same wavelengths (Le., iliI=n.-no>O, see Fig. A6-3).
Optical absorption at the fundamental absorption edge of 6H-SiC has been studied
by a number of authors [21-5]. The data revealed fine structures caused by phonons
involved in the indirect-transition process [23].
Optical absorption in the region well below the fundamental absorption edge has
been studied by Biederman [10] and Ellis and Moss [26]. These authors observed
the relatively strong absorption peaks at E-1.6 eV in the n-type samples for Elle.
Their peak strengths were found to increase with increasing carrier concentration
[26]. They were considered to arise from the interconduction-band absorption [10].
It was also found [26] that the absorption edge for EJ.e occurs at slightly longer
wavelength than that for Elle, in agreement with the data of Choyke and Patrick [23].
The free-carrier absorption, however, showed no evidence of anisotropy in the scat-
tering mechanism [26].
Fundamental reflectivity study in the interband transition region of 6H-SiC was
performed by Lambrecht et al. [7] in the 4-9.5-eV region (see Fig. A6-2), by Philipp
and Taft [27] in the 1-11.5-eV region, and by Wheeler [28] in the 3-13-eV region.
Unfortunately, the Refs. [7] and [28] authors did not performed KK analysis. Philipp
and Taft [27] performed KK analysis, but they did not state whether the data were
measured for EJ.e, or Elle, or a mixture.
The SE data for 6H-SiC have been reported by Adachi and coworker [15] in the
1.2-5.4-eV region for both EJ.e and Elle and more recently by Logothetidis and Pe-
talas [29] in the 1.5-9.5-eV region for EJ.e. The measured SE data showed CP fea-
tures at energies -6.7 and 9.2 eV for EJ.e [29] and at -5.4 eV for Elle [15]. Logo-
thetidis and Petalas [29] also found that the n dispersion for EJ.e below the lowest-
direct-band gap (1.5-5.5 e V) can be fitted by the Sellmeier equation:
£P,,) =n(A.) 2 =1.0+ ~

""
2
A): 2 (A6.2)
j ')..;, - A.Oj
with A(=1.481, 1.01 =0.1817 11m, A2=4.142, and 1.02 =0.1597 11m. Adachi and coworker
[15] also reported the fitted results of their measured n data for EJ.e and Elle using
the first-order Sellmeier equation.
More recently, Zollner and Hilifker [14] have measured the e(E) spectra of 6H-
SiC from 0.72 to 6.6 eV using rotating-analyzer ellipsometer. The sample was ob-
tained commercially from Cree Research. It was not intentionally doped and single-
side polished (Si-terminated). The sample was measured as received without surface
preparation. The accuracy for ~ was reported to be 0.01.
The optical constants in the UV-soft X-ray region (10.2-S25 eV) of SiC were
reported by Windt et al. [30]. The samples used by them were grown by CVD. The
Si L absorption edge was visible in the extinction coefficient near 100 eV. The dip in
the n dispersion near 21 eV was also found.
Tables A6-4 and A6-5 list the room-temperature values of E=el+i~, n*=n+ik, a,
and R for 6H-SiC for EJ.c and Ellc, respectively. A set of the optical constants for
ESO.l2 eV for El.c (Eg).22 eV for Ellc) were calculated using the reststrahlen
parameters in Ref. [18]. [Note that in Table III of Ref. [18], the values of rJoo/ (not
r j) were listed.] The k (a) values in the region 0.14SES2.3 eV (0.24SES2.4 eV) for
El.c (Ellc) were taken from Ellis and Moss [26] (n=1.11xl0 17 cm·'). Some optical
constants for 0.14SES2.3 eV for El.c were taken from Refs. [18] and [29], while
those for 0.24SES2.4 eV for Ellc were taken from Refs. [15] and [18]. A complete
set of the optical constants in the region 2.5SES9.5 eV for El.c were taken from Lo-
gothetidis and Petalas [29], and those above 2.5 eV for Ellc were taken from Ref.
[1S]. The optical constants above 10.2 eV for El.c were taken from Windt et al.
[30].
The (£1' ~, (n, k), a, and R values in Tables A6-4 and A6-5 are graphed in Figs.
A6-S-A6-8, respectively. The solid and dashed lines represent the data for El.c and
Ellc, respectively.
REFERENCES
1. P. K!1ckell, B. Wenzien, and F. Bechstedt, Phys. Rev. B 50, 10761 (1994).
2. C. H. Park, B.-H. Cheng, K.-H. Lee, and K. J. Chang, Phys. Rev. B 49, 4485
(1994).
3. B. Wenzien, P. K!1ckell, F. Bechstedt, and G. Gappellini, Phys. Rev. B 52,
10897 (199S).
4. Numerical Data and Functional Relationships in Science and Technology, edit-
ed by K.-H. Hellwege and O. Madelung, Landolt-Bomstein, New Series,
Group III, Vol. 17, Pt. a (Springer, Berlin, 1982).
5. W. J. Choyke, D. R. Hamilton, and L. Patrick, Phys. Rev. 133, A1163 (1964).
6. L. Patrick, D. R. Hamilton, and W. J. Choyke, Phys. Rev. 143,526 (1966).
Choyke, J. A. Edmond, J. A. Powell, and M. Alouani, Phys. Rev. B SO, 10722
(1994).
8. J. A. Powell, J. Opt. Soc. Am. 62, 341 (1972).
9. P. T. B. Shaffer, Appl. Opt. 10, 1034 (1971).
82 GROUP-IV SEMICONDUcrORS
10. E. Biedermann, Solid State Commun. 3, 343 (1965).

11. Yu. A. Makhalov and E. N. Mokhov,Sov. Phys. Solid State 18,1451 (1976).
12. O. Brafman and I. T. Steinberger, Phys. Rev. 143,501 (1966).
13. S. G. Sridhara, R. P. Devaty, and W. J. Choyke, l. Appl. Phys. 84, 2963 (1988).
14. S. Zollner and J. N. Hilifker, Phys. Status Solidi A 166, R9 (1998).
15. S. Ninomiya and S. Adachi, lpn. l. Appl. Phys. 33, 2479 (1994).
Spectrosc. 43,420 (1977).
17. W. G. Spitzer, D. Kleinman, and D. Walsh, Phys. Rev. 113, 127 (1959).
18. F. Engelbrecht and R. Helbig, Phys. Rev. B 48,15698 (1993).
19. W. J. Choyke and L. Patrick, l. Opt. Soc. Am. 58,377 (1968).
20. V. B. Bogdanov, A. N. Pikhtin, V. F. Tsvetkov, and A. D. Yas'kov, Opt. Spec-
trosc. 52, 644 (1982).
21. H. R. Philipp, Phys. Rev. 111,440 (1958).
22. R. Groth and E. Kauer, Phys. Status Solidi 1,445 (1961).
23. W. J. Choyke and L. Patrick, Phys. Rev. 127, 1868 (1962).
24. W. J. Choyke and L. Patrick, Phys. Rev. 172,769 (1968).
25. V. V. Makarov, Sov. Phys.-Semicond. 6, 1556 (1973).
26. B. Ellis and T. S. Moss, Proc. Roy. Soc. A 299, 393 (1967).
27. H. R. Philipp and E. A. Taft, in Silicon Carbide-A High Temperature Semicon-
ductor, edited by J. R. O'Connor and J. Smiltens (Pergamon, Oxford, 1960), p.
366.
28. B. E. Wheeler, Solid State Commun. 4, 173 (1966).
29. S. Logothetidis and J. Petalas, l. Appl. Phys. 80, 1768 (1996).
B. Swartzlander, P. Z. Takacs, and J. M. Pinneo, Appl. Opt. 27, 279 (1988).
25r-r-~~~~~~~~~
20 6H-SiC
15
10
5
o Figure A6·5 el(E) and e2(E)
spectra for 6H-SiC at 300 K.
-5 E..Le
Elle
-100
2 4 6 8 10
Photon energy (eV)
6H-SiC
4
3
r:::
2 Ele
Elle
1
k
",
o 2 6 8 10
Photon energy (eV)
Figure A6·6 n(E) and k(E) spectra for 6H-SiC at 300 K.
107 6H-SiC
106
105
-.
'I 104
--
E
U
~
103
102
10 1
Ele
EUe
10-1 10° 10 1 102 103

Photon energy (eV)
Figure A6·7 o.(E) spectra for 6H-SiC at 300 K.
0.7
0.6 6H-SiC
Ele
0.5 Elle
a: 0.4
0.3
0.2
0.1 0 2 4 6 8 10
Photon energy (eV)
Figure A6-8 R(E) spectra for 6H-SiC at 300 K.
Table A6·4 Optical constants of 6H-SiC for E1. cat 300 K.

eV £1 £2 n k a (em-I) R
om 9.164 0.0021 3.027 0.00034 3.49E-01 0.253
0.02 9.260 0.0044 3.043 0.00073 1.48E+00 0.255
0.03 9.435 0.0074 3.072 0.0012 3.68E+00 0.259
0.04 9.715 0.012 3.117 0.0019 7.59E+00 0.264
0.05 10.15 0.018 3.187 0.0029 1.47E+01 0.273
0.06 10.87 0.031 3.296 0.0047 2.84E+01 0.286
0.07 12.12 0.058 3.482 0.0083 5.87E+01 0.307
0.08 14.78 0.138 3.844 0.018 1.45E+02 0.345
0.09 23.58 0.634 4.856 0.065 5.96E+02 0.434
0.092 28.45 1.063 5.335 0.100 9.29E+02 0.468
0.094 37.36 2.133 6.114 0.174 1.66E+03 0.517
0.096 58.68 6.236 7.671 0.406 3.96E+03 0.593
0.098 164.2 67.07 13.07 2.566 2.55E+04 0.744
0.0982 194.7 107.3 14.44 3.717 3.70E+04 0.771
0.0984 222.6 186.9 16.02 5.834 5.82E+04 0.802
0.09844 224.7 210.5 16.32 6.449 6.44E+04 0.809
0.09848 224.0 237.0 16.58 7.146 7.13E+04 0.816
0.09852 219.3 266.6 16.80 7.935 7.93E+04 0.823
0.09856 209.3 298.7 16.94 8.816 8.81E+04 0.830
0.0986 192.4 332.2 16.98 9.785 9.78E+04 0.838
0.09864 167.4 365.3 16.87 10.83 1.08E+05 0.845
0.09868 133.5 395.3 16.59 11.91 1.19E+05 0.853
0.09872 91.19 418.9 16.12 12.99 1.30E+05 0.860
0.09876 42.47 432.9 15.45 14.01 1.40E+05 0.868
0.0988 -9.181 435.2 14.60 14.91 1.49E+05 0.875
0.09884 -59.50 425.5 13.60 15.64 l.57E+05 0.881
0.09888 -104.6 405.2 12.53 16.17 1.62E+05 0.887
Table A6-4 Continued (6H-SiC, E..lc).

eV £1 £2 n k ex (em· l ) R
0.09892 -141.8 377.2 11.43 16.50 1.66E+05 0.893
0.09896 -170.2 344.9 10.36 16.66 1.67E+05 0.898
0.099 -190.0 311.3 9.347 16.65 1.67E+05 0.903
0.09904 -202.4 278.5 8.423 16.53 1.66E+05 0.907
0.09908 -208.9 247.9 7.592 16.33 1.64E+05 0.911
0.0992 -206.5 173.8 5.631 15.43 1.55E+05 0.920
0.0994 -176.9 100.8 3.654 13.79 1.39E+05 0.931
0.0996 -147.0 63.62 2.567 12.39 1.25E+05 0.938
0.0998 -123.3 43.21 1.917 11.27 1.l4E+05 0.943
0.1 -105.2 31.06 1.498 10.37 1.05E+05 0.947
0.101 -57.77 9.818 0.644 7.628 7.8IE+04 0.958
0.105 -16.61 1.269 0.156 4.078 4.34E+04 0.965
0.11 -6.173 0.390 0.Q78 2.486 2.77E+04 0.957
0.12 -0.060 0.108 0.178 0.303 3.69E+03 0.518
0.14 3.231 0.177 1.798 0.049 7.00E+02 0.082
0.16 4.344 0.098 2.084 0.023 3.80E+02 0.124
0.18 4.893 0.058 2.212 0.013 2.40E+02 0.142
0.2 5.214 0.036 2.283 0.0079 1.60E+02 0.153
0.22 5.422 0.023 2.328 0.0049 1.l0E+02 0.159
0.24 5.565 0.016 2.359 0.0035 8.40E+01 0.164
0.26 5.670 0.013 2.381 0.0027 7. lOE+O 1 0.167
0.28 5.749 0.011 2.398 0.0022 6.30E+01 0.169
0.3 5.810 0.0092 2.410 0.0019 5.80E+01 0.171
0.32 5.858 0.0076 2.420 0.0016 5.lOE+01 0.172
0.34 5.897 0.0065 2.428 0.0013 4.64E+01 0.174
0.36 5.929 0.0056 2.435 0.0012 4.20E+01 0.175
0.38 5.955 0.0048 2.440 0.0010 3.75E+01 0.175
0.4 5.977 0.0041 2.445 8.43E-04 3.42E+01 0.176
0.42 5.996 0.0036 2.449 7.28E-04 3. lOE+O 1 0.176
0.44 6.013 0.0031 2.452 6.28E-04 2.80E+01 0.177
0.46 6.027 0.0027 2.455 5.40E-04 2.52E+01 0.177
0.48 6.039 0.0023 2.457 4.69E-04 2.28E+01 0.178
0.5 6.050 0.0019 2.460 3.95E-04 2.00E+01 0.178
0.7 6.673 0.00049 2.583 9.44E-05 6.70E+00 0.195
0.9 6.706 0.00016 2.590 3.l1E-05 2.84E+00 0.196
1.1 6.747 7.45E-OS 2.598 1.43E-OS 1.60E+00 0.197
1.3 6.798 5.58E-OS 2.607 1.07E-OS 1.4IE+00 0.199
1.5 6.859 S.99E-05 2.619 1.14E-OS 1.74E+00 0.200
1.7 6.930 6.96E-05 2.632 1.32E-05 2.28E+00 0.202
1.9 7.012 7.34E-OS 2.648 1.39E-05 2.67E+00 0.204
2.1 7.105 7.39E-OS 2.666 1.39E-05 2.9SE+00 0.206
2.3 7.212 7.28E-OS 2.685 l.36E-05 3. 16E+00 0.209
2.5 7.332 2.708 0.212
2.7 7.468 2.733 0.215
2.9 7.622 6.20E-05 2.761 1.l2E-05 3.30E+00 0.219
3 7.706 2.65E-04 2.776 4.77E-05 1.45E+01 0.221
3.1 7.795 0.0015 2.792 2.74E-04 8.60E+Ol 0.223
3.2 7.889 0.0045 2.809 8.01E-04 2.60E+02 0.226
3.3 7.989 0.0090 2.827 0.0016 5.30E+02 0.228
3.4 8.096 0.014 2.845 0.0024 8.40E+02 0.230
Table A6·4 Continued (6H-SiC, Eic).

eV 10 1 102 n k a (cm· l ) R
3.5 8.209 0.019 2.865 0.0034 1.20E+03 0.233
3.6 8.330 0.025 2.886 0.0044 1.60E+03 0.236
3.7 8.458 0.032 2.908 0.0055 2.07E+03 0.238
3.8 8.595 0.041 2.932 0.0070 2.70E+03 0.241
3.9 8.730 0.052 2.955 0.0089 3.50E+03 0.244
4 8.897 0.068 2.983 0.011 4.60E+03 0.248
4.1 9.064 0.088 3.011 0.015 6.lOE+03 0.251
4.2 9.242 0.120 3.040 0.020 8.40E+03 0.255
4.3 9.433 0.155 3.071 0.025 1.l0E+04 0.259
4.4 9.639 0.195 3.105 0.031 1.40E+04 0.263
4.5 9.925 0.535 3.140 0.085 3.87E+04 0.268
4.6 10.16 0.599 3.189 0.094 4.38E+04 0.273
4.7 10.31 0.727 3.213 0.113 5.39E+04 0.276
4.8 10.62 0.941 3.262 0.144 7.02E+04 0.283
4.9 10.91 1.070 3.307 0.162 8.03E+04 0.288
5 11.18 1.305 3.349 0.195 9.88E+04 0.293
5.1 11.49 1.540 3.397 0.227 1.17E+05 0.299
5.2 11.81 1.882 3.447 0.273 1.44E+05 0.305
5.3 12.21 2.310 3.510 0.329 1.77E+05 0.313
5.4 12.64 2.781 3.577 0.389 2. 13E+05 0.322
5.5 12.94 3.422 3.628 0.472 2.63E+05 0.329
5.6 13.24 4.278 3.685 0.581 3.30E+05 0.339
5.7 13.60 5.134 3.751 0.684 3.95E+05 0.349
5.8 13.88 6.203 3.814 0.813 4.78E+05 0.360
5.9 14.11 7.412 3.876 0.956 5.72E+05 0.372
6 14.12 8.770 3.920 1.119 6.80E+05 0.384
6.1 13.93 10.16 3.947 1.287 7.96E+05 0.396
6.2 13.52 11.98 3.974 1.507 9.47E+05 0.412
6.3 13.10 13.80 4.008 1.721 1.10E+06 0.428
6.4 12.09 15.38 3.978 1.933 1.25E+06 0.442
6.5 10.70 16.86 3.915 2.153 1.42E+06 0.456
6.6 8.834 17.97 3.798 2.365 1.58E+06 0.469
6.7 6.759 18.18 3.616 2.514 1.71E+06 0.476
6.8 5.155 17.86 3.446 2.592 1.79E+06 0.480
6.9 3.850 18.02 3.338 2.700 1.89E+06 0.489
7 2.567 18.07 3.227 2.801 1.99E+06 0.498
7.1 0.802 17.56 3.032 2.896 2.08E+06 0.508
7.2 -0.684 16.86 2.845 2.963 2. 16E+06 0.517
7.3 -1.765 16.17 2.693 3.003 2.22E+06 0.525
7.4 -2.727 15.36 2.537 3.027 2.27E+06 0.532
7.5 -3.551 14.33 2.368 3.026 2.30E+06 0.538
7.6 -4.225 13.05 2.178 2.995 2.31E+06 0.543
7.7 -4.706 11.82 2.002 2.952 2.30E+06 0.548
7.8 -4.888 10.93 1.882 2.904 2.30E+06 0.550
7.9 -5.155 10.12 1.761 2.873 2.30E+06 0.556
8 -5.091 9.176 1.644 2.792 2.26E+06 0.555
8.1 -4.813 8.321 1.549 2.686 2.2IE+06 0.548
8.2 -4.599 7.540 1.455 2.591 2.15E+06 0.543
8.3 -4.278 7.102 1.416 2.507 2. 11E+06 0.533
8.4 -3.850 6.781 1.405 2.413 2.06E+06 0.516
A6 HEXAGONAL Sll..ICON CARBIDE (2H-, 4H-, and 6H-SiC) 87
Table A6·4 Continued (6H-SiC, E.Lc).

eV £1 £2 n k a (cm·l ) R
8.5 -3.561 6.578 1.400 2.350 2.02E+06 0.504
8.6 -3.262 6.417 1.403 2.287 1.99E+06 0.490
8.7 -3.187 6.225 1.379 2.256 1.99E+06 0.487
8.8 -2.995 6.053 1.371 2.208 1.97E+06 0.478
8.9 -2.941 5.989 1.366 2.192 1.98E+06 0.475
9 -2.888 5.936 1.363 2.178 1.99E+06 0.472
9.1 -2.781 5.882 1.365 2.155 1.99E+06 0.467
9.2 -2.888 5.979 1.370 2.183 2.04E+06 0.472
9.3 -2.995 6.011 1.364 2.203 2.08E+06 0.478
9.4 -3.027 6.043 1.366 2.212 2. llE+06 0.479
9.5 -3.316 6.171 1.358 2.272 2. 19E+06 0.493
10.2 -2.822 5.292 1.26 2.10 2. 17E+06 0.470
10.3 -2.673 4.978 1.22 2.04 2. 14E+06 0.463
10.8 -2.180 3.372 0.958 1.76 1.92E+06 0.447
11.4 -1.907 3.292 0.974 1.69 1.96E+06 0.423
11.6 -1.890 2.777 0.857 1.62 1.91E+06 0.436
11.8 -1.867 2.898 0.889 1.63 1.95E+06 0.429
12.1 -1.723 3.300 1.00 1.65 2.02E+06 0.405
12.5 -1.418 2.534 0.862 1.47 1.87E+06 0.387
13.3 -1.200 2.006 0.754 1.33 1.79E+06 0.378
13.5 -1.254 2.162 0.789 1.37 1.87E+06 0.378
14.1 -1.219 2.222 0.811 1.37 1.96E+06 0.371
14.9 -1.096 1.826 0.719 1.27 1.91E+06 0.370
16.7 -0.779 1.244 0.587 1.06 1.79E+06 0.355
16.8 -0.793 1.269 0.593 1.07 1.83E+06 0.356
17.3 -0.872 1.225 0.562 1.09 1.91E+06 0.380
18.5 -0.593 0.935 0.507 0.922 1.73E+06 0.350
20.1 -0.264 0.576 0.430 0.670 1.37E+06 0.310
21.2 -0.110 0.417 0.401 0.520 1.12E+06 0.282
23 0.159 0.279 0.490 0.285 6.64E+05 0.148
25.3 0.330 0.234 0.606 0.193 4.95E+05 0.074
26.9 0.424 0.173 0.664 0.130 3.55E+05 0.047
27.7 0.458 0.171 0.688 0.124 3.48E+05 0.039
30.5 0.556 0.166 0.754 0.110 3.4IE+05 0.024
32.7 0.588 0.182 0.776 0.117 3.88E+05 0.020
34.7 0.627 0.145 0.797 0.0909 3.20E+05 0.015
37.9 0.673 0.110 0.823 0.0668 2.57E+05 0.011
40.8 0.727 0.087 0.854 0.0511 2. llE+05 6.96E-03
48.4 0.786 0.060 0.887 0.0339 1.66E+05 3.91E-03
51 0.796 0.056 0.893 0.0315 1.63E+05 3.47E-03
72.3 0.911 0.021 0.9547 0.0110 8.06E+04 5.69E-04
91.5 0.959 0.008 0.9791 0.0043 4.02E+04 1.16E-04
108.7 0.973 0.036 0.9866 0.0181 2.00E+05 1.28E-04
183.4 0.970 0.022 0.9851 0.0114 2. 12E+05 8.93E-05
277.3 0.988 0.0069 0.99387 3.46E-03 9.73E+04 1.25E-05
392.2 0.992 0.0035 0.99579 1.74E-03 6.92E+04 5.21E-06
525.2 0.995 0.0013 0.99733 6.58E-04 3.50E+04 1.9OE-06
Table A6-5 Optical constants of6H-SiC for Ellc at 300 K.

eV 10 1 102 n k a (cm· 1) R
0.01 9.755 2.30E-03 3.123 3.68E-04 3.73E-01 0.265
0.02 9.863 4.90E-03 3.140 7.80E-04 1.58E+00 0.267
0.03 10.06 8.23E-03 3.171 1.30E-03 3.95E+00 0.271
0.04 10.37 0.013 3.221 2.02E-03 8.18E+00 0.277
0.05 10.87 0.021 3.297 3. 13E-03 1.59E+01 0.286
0.06 11.68 0.035 3.418 5.15E-03 3.13E+01 0.300
0.062 11.91 0.046 3.451 6.71E-03 4.22E+01 0.303
0.0622 11.94 0.052 3.455 7.59E-03 4.78E+01 0.304
0.0624 11.95 0.060 3.457 8.75E-03 5.53E+01 0.304
0.0626 11.97 0.060 3.459 8.69E-03 5.51E+01 0.304
0.0628 11.99 0.055 3.462 7.93E-03 5.05E+01 0.305
0.063 12.01 0.052 3.466 7.49E-03 4.78E+01 0.305
0.0632 12.04 0.049 3.469 7.01E-03 4.49E+01 0.305
0.0634 12.06 0.047 3.473 6.7IE-03 4.3IE+01 0.306
0.07 13.13 0.067 3.624 9.19E-03 6.52E+01 0.322
0.08 16.30 0.166 4.037 0.021 1.67E+02 0.364
0.09 27.85 0.886 5.278 0.084 7.66E+02 0.464
0.092 35.03 1.620 5.920 0.137 1.28E+03 0.506
0.094 49.90 3.849 7.069 0.272 2.59E+03 0.566
0.096 98.01 18.01 9.941 0.906 8.82E+03 0.670
0.0964 123.3 30.28 11.187 1.353 1.32E+04 0.702
0.0968 165.2 60.11 13.056 2.302 2.26E+04 0.743
0.097 195.8 93.15 14.364 3.242 3. 19E+04 0.767
0.0972 230.7 157.1 15.965 4.921 4.85E+04 0.795
0.0974 240.0 284.0 17.490 8.120 8.02E+04 0.828
0.0975 201.2 374.2 17.692 10.58 1.05E+05 0.847
0.0976 105.6 453.3 16.898 13.41 1.33E+05 0.865
0.0977 -32.37 471.3 14.833 15.89 1.57E+05 0.882
0.0978 -151.9 413.3 12.008 17.21 1.71E+05 0.897
0.098 -230.0 240.3 7.163 16.77 1.67E+05 0.918
0.0982 -206.6 134.5 4.469 15.05 1.50E+05 0.930
0.0984 -171.9 81.76 3.037 13.46 1.34E+05 0.938
0.0988 -121.3 37.86 1.699 11.14 1.12E+05 0.948
0.0992 -91.19 21.41 1.113 9.614 9.67E+04 0.954
0.0996 -72.09 13.68 0.802 8.528 8.6IE+04 0.958
0.1 -59.05 9.465 0.614 7.709 7.82E+04 0.960
0.102 -28.90 2.778 0.258 5.382 5.57E+04 0.966
0.104 -17.53 1.304 0.156 4.190 4.42E+04 0.967
0.106 -11.58 0.757 0.111 3.405 3.66E+04 0.965
0.108 -7.880 0.510 0.091 2.809 3.08E+04 0.960
0.1086 -6.996 0.487 0.092 2.647 2.9IE+04 0.955
0.1088 -6.710 0.494 0.095 2.592 2.86E+04 0.952
0.109 -6.427 0.522 0.103 2.537 2.80E+04 0.946
0.1092 -6.155 0.591 0.119 2.484 2.75E+04 0.936
0.1094 -5.954 0.725 0.148 2.445 2.71E+04 0.919
0.1095 -5.918 0.787 0.161 2.438 2.71E+04 0.912
0.1096 -5.913 0.798 0.164 2.437 2.71E+04 0.910
0.1097 -5.888 0.755 0.155 2.432 2.70E+04 0.914
0.1098 -5.821 0.699 0.145 2.417 2.69E+04 0.919
0.11 -5.636 0.645 0.136 2.378 2.65E+04 0.922
A6 HEXAGONAL Sll..ICON CARBIDE (2H-, 4H-, and 6H-SiC) 89
Table A6-5 Continued (6H-SiC, Bile).
eV £1 £2 n k a (cm'\) R
0.1102 -S.S07 0.607 0.129 2.350 2.63E+04 0.924
0.1104 -5.353 O.SOl 0.108 2.316 2.S9E+04 0.934
0.1106 -5.142 0.418 0.092 2.270 2.54E+04 0.942
0.1108 -4.928 0.369 0.083 2.221 2.50E+04 0.946
0.111 -4.724 0.339 0.078 2.175 2.45E+04 0.947
0.1112 -4.530 0.318 0.075 2.130 2.40E+04 0.948
0.112 -3.838 0.267 0.068 1.960 2.23E+04 0.945
0.114 -2.459 0.199 0.063 1.569 1.81E+04 0.930
0.116 -1.399 0.156 0.066 1.185 1.39E+04 0.896
0.118 -0.553 0.126 0.084 0.749 8.96E+03 0.805
0.12 0.138 0.104 0.395 0.132 1.6IE+03 0.19S
0.14 3.424 2.84E-03 1.850 7.66E-04 1.09E+01 0.089
0.16 4.570 1.27E-03 2.138 2.97E-Q4 4.82E+00 0.131
0.18 5.141 7.06E-03 2.267 1.S6E-03 2.84E+01 0.150
0.2 5.478 4.42E-03 2.340 9.43E-04 1.91E+01 0.161
0.22 S.697 3.95E-03 2.387 8.27E-04 1.85E+01 0.168
0.24 5.847 3.48E-03 2.418 7.19E-Q4 1.75E+01 0.172
0.26 5.959 2.61E-03 2.441 S.3SE-04 1.41E+01 0.17S
0.28 6.042 1.44E-03 2.4S8 2.92E-04 8.30E+00 0.178
0.282 6.055 2.58E-03 2.461 5.25E-04 1.50E+Ol 0.178
0.3 6.107 1.48E-03 2.471 2.99E-04 9.lOE+00 0.180
0.32 6.158 8.72E-04 2.482 1.76E-04 5.70E+00 0.181
0.34 6.199 6.93E-04 2.490 1.39E-04 4.80E+00 0.182
0.36 6.233 5.47E-04 2.497 1.10E-04 4.00E+00 0.183
0.38 6.261 4.42E-04 2.502 8.83E-05 3.40E+00 0.184
0.4 6.285 3.46E-04 2.507 6.90E-OS 2.80E+00 0.18S
0.42 6.30S 2.89E-04 2.511 5.7SE-OS 2.4SE+00 0.18S
0.44 6.322 2.40E-04 2.514 4.77E-05 2. 13E+OO 0.186
0.46 6.337 1.98E-04 2.517 3.92E-OS 1.83E+00 0.186
0.48 6.350 1.64E-04 2.520 3.2SE-OS 1.S8E+00 0.186
O.S 6.362 1.39E-04 2.522 2.76E-05 1.40E+00 0.187
0.7 6.530 6.48E-05 2.5SS 1.27E-OS 9.00E-01 0.191
0.9 6.670 7.87E-05 2.S83 1.52E-OS 1.39E+00 0.195
1.1 6.790 1.08E-04 2.606 2.07E-OS 2.31E+00 0.198
1.3 6.89 1.95E-03 2.625 3.72E-04 4.90E+01 0.201
1.5 6.98 7.68E-04 2.643 1.45E-04 2.21E+01 0.203
1.7 7.11 2.60E-04 2.666 4.87E-05 8.40E+00 0.207
1.8 7.14 1.67E-04 2.672 3.12E-05 S.70E+00 0.207
1.9 7.21 1.37E-04 2.686 2.S4E-05 4.90E+00 0.209
2 7.20 1.16E-04 2.684 2. 17E-OS 4.40E+00 0.209
2.1 7.27 9.88E-05 2.697 1.83E-OS 3.90E+00 0.211
2.2 7.34 8.82E-05 2.710 1.63E-05 3.63E+00 0.212
2.3 7.41 8.17E-OS 2.723 1.50E-05 3.S0E+OO 0.214
2.4 7.47 8.16E-05 2.734 1.49E-OS 3.63E+00 0.216
2.5 7.S4 2.747 0.217
2.6 7.64 2.763 0.220
2.7 7.74 2.782 0.222
2.8 7.83 2.798 0.224
2.9 7.94 2.817 0.227
3 8.06 2.840 0.230
Table A6-5 Continued (6H-SiC. EI/c).

eV t, t2 n k a (em·') R
3.1 8.18 2.860 0.232
3.2 8.32 0.3 2.884 0.052 1.69E+04 0.235
3.3 8.46 0.4 2.909 0.069 2.30E+04 0.239
3.4 8.61 0.52 2.936 0.089 3.05E+04 0.242
3.5 8.76 0.66 2.962 0.111 3.95E+04 0.246
3.6 8.92 0.79 2.990 0.132 4.82E+04 0.250
3.7 9.09 0.95 3.019 0.157 5.90E+04 0.253
3.8 9.31 1.09 3.056 0.178 6.87E+04 0.258
3.9 9.50 1.23 3.088 0.199 7.87E+04 0.263
4 9.74 1.41 3.130 0.225 9. 14E+04 0.268
4.1 10.00 1.60 3.172 0.252 1.05E+05 0.274
4.2 10.23 1.79 3.210 0.279 1.19E+05 0.279
4.3 10.49 2.10 3.255 0.323 1.41E+05 0.285
4.4 10.74 2.36 3.296 0.358 1.60E+05 0.291
4.5 10.99 2.57 3.337 0.38S 1.76E+OS 0.296
4.6 11.11 3.00 3.362 0.446 2.08E+OS 0.301
4.7 11.17 3.38 3.380 0.500 2.38E+OS 0.304
4.8 11.08 3.81 3.376 0.S64 2.75E+05 0.306
4.9 11.15 4.26 3.397 0.627 3.l1E+OS 0.311
5 10.95 4.65 3.380 0.688 3.49E+OS 0.312
S.l 11.09 5.10 3.413 0.747 3.86E+05 0.319
5.2 11.13 5.42 3.428 0.790 4. 17E+05 0.322
5.3 10.91 5.76 3.409 0.845 4.54E+05 0.323
A7 RHOMBOHEDRAL SILICON CARBIDE
(15R-SIC)

The occurrence of a large number of polytypes in SiC and the strong influence this
has on many of its properties is well known. Rhombohedral (trigonal) lSR-SiC is
the second commonest polytype. Rhombohedral polytypes, such as 21R- and 27R-
SiC, have also been identified but very rarely.

To our knowledge, no detailed theoretical study on the electronic energy-band
structure of lSR-SiC has been reported up to date. We may note, however, that the
energy-band structure of lSR-SiC is very similar to that of 6H-SiC. This comes from
the fact that the reflectivity spectra observed for lSR-SiC are very similar to those
for 6H-SiC [1,2]. The lowest-indirect-exciton gaps are also nearly the same between
lSR- and 6H-SiC (see Table A6-1).

Pikhtin et al. [3] measured the n values of lSR- and 6H-SiC in the 0.4-S0-j.l.m
wavelength region at 297 and lOS K and found that the difference between the n
values for these materials does not exceed the error of measurement over the entire
spectral range. The static and high-frequency dielectric constants of lSR- and 6H-
SiC estimated from these n data were £,=9.66 (9.64) and £_=6.520 (6.S09) for El.c
and £,=10.09 (10.01) and £_=6.742 (6.692) for E II cat 297 K (lOS K) [3].
The n dispersion in lSR-SiC has also been studied by Shaffer [4]. Like hexagonal
SiC, the ordinary values no (El.c) for lSR-SiC are usually smaller than the extraor-
dinary values ne (E II c) at the same wavelengths (M=ne-n.,>O, see Fig. A6-3).
Optical absorption in the region below the fundamental absorption edge of lSR-
SiC has been measured by Biedermann [S] and Ellis and Moss [6]. These authors
found the interconduction-band absorption peaking at E-1.6 eV (N=O.6-1j.1.m) in n-
type samples for Ell c. We reproduce in Fig. A7-1 the absorption spectra measured
by Ellis and Moss [6] (A,=O.4-6 ),lm). Figure A7-2 also shows the absorption spectra
for lSR-SiC at wavelengths beyond S j.l.m [6]. The intense lattice absorption band
has been found in the 1O-14-j.l.m wavelength range. However, a complete set of the
reststrahlen parameters of lSR-SiC have not yet been reported.
91
400
200
100
"I
E
~
~ 50
20~-+--~---+----~----~--+-~
roL--0~~--~O'-6---l~--~2-----4~-+6~
A (,.an)
Figure A7-l Absorption in n-type lSR-SiC (n-9xlO 17 em-3) for EJ.c (Kll ) and E " c (K33 ) at
300 K. (From Ellis and Moss [6].)
10001----+---1----+-1-----1-----4-----1----
'I
E
-
roOII-----~-+~+4----+_---__+----~~----+_----~
o
6 12 18
A (/Lm)
Figure A7-2 Long-wavelength absorption in n-type lSR-SiC (n-3_06xlO 17 em-3) for El.c
(Kll ) and E II c (K 33 ) at 300 K. (From Ellis and Moss [6].)
A7 RHOMBOHEDRAL SILICON CARBIDE (15R-SiC) 93
Reflectance measurements have been carried out on 15R-SiC in the 3-13-eV re-
gion by Wheeler [1] and in the 4-9.5-eV region by Lambrecht et al. [2] (see Fig.
A6-2). These authors, however, did not perform KK analysis to obtain a set of the
optical constants (n, k) or (e1 , ~). No SE data has also been reported so far on 15R-
SiC. Thus, no (e1, ~ or (n, k) data are available in the interband transition region of
15R-SiC. Modulation spectroscopies, such as wavelength-modulated absorption [7]
and ER [8], have been carried out to determine the CP energies in some polytypes of
rhombohedral SiC (15R-, 21R-, and 27R-SiC).
Table A7-1 lists the e 1, n, and R [=(n-V/(n+l)2] values for 15R-SiC. They were
obtained from Shaffer [4]. These data yield the high-frequency dielectric constants
e~=6.53 for El.c and 6.70 for E " c, in good agreement with those obtained by Pik-
htin et al. [3].
Table A7-1 Optical constants of J5R-SiC at 300 K.

E.Lc Ellc
eV £1 n R £1 n R
1.794 6.8975 2.6263 0.201 7.1161 2.6676 0.207
2.012 6.9849 2.6429 0.203 7.2248 2.6879 0.209
2.104 7.0241 2.6503 0.204 7.2727 2.6968 0.211
2.182 7.0607 2.6572 0.205 7.3132 2.7043 0.212
2.407 7.1824 2.6800 0.208 7.4513 2.7297 0.215
2.489 7.2329 2.6894 0.210 7.5087 2.7402 0.216
2.654 7.3338 2.7081 0.212 7.6226 2.7609 0.219
REFERENCES
1. B. E. Wheeler, Solid State Commun. 4,173 (1966).
Choyke, J. A. Edmond, J. A. Powell, and M. Alouani, Phys. Rev. B 50, 10722
(1994).
Spectrosc. 43,420 (1977).
4. P. T. B. Shaffer, Appl. Opt. 10, 1034 (1971).
5. E. Biedermann, Solid State Commun. 3, 343 (1965).
6. B. Ellis and T. S. Moss, Proc. Roy. Soc. A 299, 393 (1967).
7. V. 1. Gavrilenko, 1. S. Gorban', V. G. Litovchenko, and A. S. Skirda, Sov. Phys.
Semicond. 16, 109 (1982).
8. R. G. Humphreys, D. Bimberg, and W. J. Choyke, Solid State Commun. 39,
163 (1981).
A8 SILICON-GERMANIUM ALLOY
(Slpe1_X )
AS.1 GENERAL REMARKS

Silicon and germanium are completely miscible over the entire composition range
and give rise to alloy that retains the diamond-type crystal structure. The lattice con-
stant of SixGe l _x alloy at room temperature can be written, from Vegard's law, as
a(x) = 5.6579 -O.2269x (A8.1)
The lattice mismatch between Si and Ge is about 4.2%. We have seen significant
development in the growth of high-quality SixGe1.)Si heterostructures [1]. These
heterostructures have inspired new research in Si-based band-engineering physics
and device technology.
AS.2 ELECTRONIC ENERGY-BAND STRUCTURE

The CPA is a method for treating the single-particle properties of substitutionally
disordered binary alloy within the framework of multiple-scattering theory. Figure
A8-1 shows the electronic energy-band structures of Si, SixGe 1_x (x=O.5), and Ge as
10.--;,-------,------,
(b) SiO.5GeO_5 (e) Ge
?o
"--
-4
Q)
t: -6
UJ
-8
-10
-12
-"
-16
·18 0.5 0.25 0 0.5 1.0 0.5 0.25 0 0.5 1.0

L r xL L r x
Figure AS-! Electronic energy-band structures for Si, SixGe 1_x (x=O.5), and Ge as calculated
within aCPA-VCA. (From Krishnamurthy etal. (2].)
94
A8 SILICON-GERMANIUM ALLOY (SixGel.J 9S
calculated within a CPA-VCA by Krishnamurthy et al. [2]. Figure AS-2 also shows
the composition dependence of some CP energies and lowest-indirect-gap energy in
SixGe1•x alloy determined from ER [3] and optical absorption measurements [4].
The conduction-band ordering at the r point of Ge is quite different from that of
Si. In Si the lowest-lying r conduction band is p-like r 1S (r6', rs'); however in Ge
the s-like r 2 • (r7') band is the lowest conduction band. The corresponding lowest
direct gap is Eo' for Si and Eo for Ge (see Fig. AS-I). From Fig. AS-2, we can expect
the Eo-Eo' (r2 .-r1S) crossing at x-o.75. The lowest indirect gap (EglD) also changes
from EgL to E/
at x-o.l5. No or very weak x dependence has been observed about
the Eo' (Eo'+~') and E2 CP energies [3].
5.0
eV Si xGe 1-x
4.6 0
[, ., ~
4.2
3.8
I
14
fo+t1'o
00'" IA
II ~
""?,: o~ I::?"
3D
...... 2.6
E,+t1, ;- 81 ~
21
~V
~f, -:;;;
W
fo+t1 o 1/ Figure A8·2 Composition dependence of some
V
1.8 CP energies and lowest-indirect-gap energy in
1.4
/ SixGel.x alloy determined from ER [3] and opti-
cal absorption measurements [4] at room tem-
1.0
~ E ID
g~ ---
perature.
11f"
0.6 V I
o 0.2 0.4 0.6 0.8 1D
x

No detailed experimental data on the composition dependence of the static dielectric
constant e, of SixGe 1•x alloy has been reported so far. Using the linear interpolation
scheme and e, of Si and Ge listed in Table 2.1, we obtain
e,(x) = 16.04 - 4.44x (AS.2)
Optical absorption in the reststrahlen region of SixGe l _x alloy has been measured
by several authors [5-71_ The measured spectra are rather complex due to a number
of two- and single-phonon bands. The absorption coefficient is weak for the whole
composition range, with the peak value of a-30 cm-I • Figure A8-3 shows, as an ex-
ample, the IR absorption spectra for SixGe l _x alloy (0$x~1.0) as measured by Braun-
stein [51. The samples used in this study were selected for homogeneity of composi-
tion and low free-carrier concentration. Nevertheless, most of the spectra for
0.22$x~0.81 showed a strong background absorption due to free carriers. Bulk sin-
gle crystals were used in the x range 0 to 20% and 90 to 100%; the intermediate
compositions were coarse polycrystals. For several at.% Si in Ge or vice versa, the
general features of the spectra are similar to the lattice absorption spectra of the
dominant constituent, except for slight changes in the positions and shapes of the
bands. Aside from the Ge- and Si-like bands present in the alloy, new bands starting
at 214 and 508 cm- I are formed at the Ge and Si ends of the alloy, respectively. Both
of these bands grow in intensity and shift slightly with position as the Ge and Si
content are increased.
Braunstein [81 reported free-hole absorption in p-type bulk samples of various
FREOUENCY (VI IN 10 12 CPS
100 10 20. 30 100 10 20 30 10 10 20 30
~ ~S~II
5°D.,·SI 5 0 b : ] 2 .SI, .
10 10
5 5 0.5
I I 0.1 '-'--'-'-'-'-'--'-'-&....J
0
64".
'l,~~;]
..:- 50 2.5'10 SI 1 SI]
50 0 0 E :
I 100
10
~ 5
10
5 0.5 V,\ n '
f- I I 0.1
':t 'V\
~ ;~~'Sll
zlOO
~50~".SI 50 68'10 SI
100G
II- 10 10
~ 5 5 0.5 1\
u
I I 0.1
~IOO 10,--.....--.---.----.,.--.--...,
t SI 0
505:]1.5'1
50 76"1. sl
100B
: ~SII\
~ 10 10
::l 5 5 0.5
'" 0.1 '-'-........-'--''-'-..1.-10........
IggE;J2'1o
-' I
10
SI Iggol.,.SI
10
I~~
5 5 0.5~
I I 0.1
200 600 1000 200 600 1000 200 600 1000
WAVE NUMBER (CM-II
Figure AS-3 IR absorption spectra for SixGel.x alloy (O~1.0). (From Braunstein [5].)
A8 SILICON-GERMANIUM ALLOY (Si.Ge 1_.) 97
compositions doped with shallow acceptor concentrations to yield p of the order of

1017 cm-3 • He observed the intervalence-band absorption and determined some va-
lence-band parameters, such as the hole effective masses and SO splitting energy, of
Si.Ge 1_. alloy.
Optical absorption coefficients at the fundamental absorption edge of Si.Ge 1_.
were determined by Braunstein et at. [4]. His measured data were represented effi-
ciently by means of the compositionally dependent Macfarlane-Roberts expression
by Humlfcek et at. [9]. Humlfcek et at. [10] also proposed a polynomial expression
for the n dispersion in the region E::;1.5 e V for the alloy of optional composition:
(AS.3)
with
no(x) = 4.01-0.S1x+0.22x2 (AS.4a)
~(x) =0.216- 0.211x + 0.OS9X2 (AS.4b)
Reflectance measurements on bulk and LPE samples of Si.Ge 1_. (0::;X::;1.0) have
been performed by Schmidt [11] in the spectral range 1 to 13 eV at room tempera-
ture and in the range 1 to 6 eV at 90 K. He reported not only the R(E) spectra but
also the e(E) data in graphical form. The thickness of surface oxides was ellip-
so metrically estimated to be in the range 2-4 nm. However, no correction was made
for the oxide overlayers. His data were discussed and tested against recent ellisp-
sometric results by Humlfcek et at. [12].
SE has been used to study optical properties of Si.Ge 1_. alloy by Humlfcek et at.
[13]. The samples studied were: (i) polycrystalline with typical grain diameters of
about 1 mm and (ii) LEP-grown epilayers of several micrometers thick. Accurate
values of the El CP energies were obtained by performing an SCP analysis. Subse-
quent data by Jellison et at. [14], however, indicated that the samples used by
Humlfcek et at. [13] may have had a residual oxide or roughness overlayer. Eight
samples were used by Jellison et at., covering the entire composition range of
Si.Ge 1_. alloy. They were grown using a conventional CVD on Ge substrates (x=0.11,
0.20, O.2S, and O.4S) and on Si substrates (x=0.47, 0.65, 0.S5, and 0.9S). The effects
of surface overlayer were mathematically removed. The optical constants in the
1.476-5.165-eV region were presented both in graphical and tabular forms. These
data will form a good data base for optical studies of Si.Ge 1.JSi(Ge) layered struc-
tures. We reproduce in Fig_ AS-4 the spectral dependence of (e 1, ~) measured by
Jellison et at. [14]- The temperature dependence of the optical constants for Si.Ge 1_.
alloy has also been investigated using SE by HumHcek et at. [12,15].
Si.Ge 1_. alloy in the form of thin, strained, epitaxial layer is under investigation for
applications as high speed heterojunction bipolar transistors and multi-quantum-well
devices_ Pickering and Carline [16] studied the dielectric-function spectra for
strained and unstrained Si.Ge 1_. alloys with x-O_SO and 0_S7 using SE. The effect of
strain was shown to cause a modification of the spectra in the El CP region, result-
Ge
- c-Si
= ~~
30 40 - - 98
30
oS 20 20 - 47
10 10
01 4 5 01 2 4 5
Energy (eV) Energy (eV)
Figure A8-4 £I(E) and £2(E) spectra for Si.Gel-% alloy. The numbers indicate the %Si. (From
Jellison et al. [14].)
ing in a decrease in the refractive index at 1.96 eV, amounting to 0.06 at x=0.78. The
measured data were presented in both graphical and tabular forms.
Ordering in elemental semiconductor alloys has been observed by many workers
[1]. Tsang et al. [17] studied the compositionally-ordered Sio.sGIlo.s alloys grown by
MBE at low temperatures using RS and SE. The description of the SE £(E) results in
terms of the EI CP showed that the ordering does not produce large change in the
dielectric response of such ordered alloys.
Tables A8-1a-A8-lf list the room-temperature values of £=£I+i~, n*=n+ik, a,
and R for SizGel-x alloy with x=O.l1, 0.20, 0.28, 0.48, 0.65, and 0.85, respectively.
The data for 1.476S;ES;5.165 eV were taken from Jellison et al. [14] and those for
ES;1.4 eV (£1' n, and R) were from Humlf~ek et al. [10] [Eq. (A8.3)].
REFERENCES
1. See, for example, V. P. Kesan, and S. S. Iyer, in Molecular Beam Epitaxy-Ap-
plications to Key Materials, edited by R. F. C. Farrow (Noyes, Park Ridge,
1995), p. 453.
2. S. Krishnamurthy, A. Sher, and A.-B. Chen, Phys. Rev. B 33,1026 (1986).
3. J. S. Kline, F. H. Pollak, and M. Cardona, Helv. Phys. Acta 41, 968 (1968).
4. R. Braunstein, A. R. Moore, and F. Herman, Phys. Rev. 109,695 (1958).
5. R. Braunstein, Phys. Rev. 130,879 (1963).
6. A. E. Cosand and W. G. Spitzer, J. Appl. Phys. 42, 5241 (1971).
7. S. C. Shen and M. Cardona, Solid State Commun. 36; 327 (1980).
8. R. Braunstein, Phys. Rev. 130,869 (1963).
9. J. Humlf~ek, F. Luke~, and E. Schmidt, in Handbook of Optical Constants of
Solids ll, edited by E. D. Palik (Academic, Orlando, 1991), p. 607.
A8 SILICON-GERMANIUM ALLOY (SixGel_x) 99
10. 1. Humlfcek, A. Roseler, T. Zettler, M. G. Kekoua, and E. V. Khoutsishvili,

Appl. Opt. 31,90 (1992).
11. E. Schmidt, Phys. Status Solidi 27,57 (1968).
12. J. Humlicek, F. Lukes, E. Schmidt, M. G. Kekoua, and E. Khoutsishvili, Phys.
Rev. B 33,1092 (1986).
13. J. Humlfcek, M. Garriga, M. 1. Alonso, and M. Cardona, f. Appl. Phys. 65,
2827 (1989).
14. G. E. Jellison, Jr., T. E. Haynes, and H. H. Burke, Opt. Mater. 2, 105 (1993).
15. J. Humlicek and M. Garriga, Appl. Phys. A 56, 259 (1993).
16. C. Pickering and R. T. Carline, f. Appl. Phys. 75, 4642 (1994).
17. J. C. Tsang, V. P. Kesan, J. L. Freeouf, F. K. LeGoues, and S. S. Iyer, Phys.
Rev. B 46, 6907 (1992).
Table A8·1a Optical constants of SixGel_x with x=O.ll at 300 K.

eV £1 £2 n k a (em-I) R
1 16.95 4.117 0.371
1.05 17.12 4.137 0.373
1.1 17.29 4.158 0.375
1.476 19.57 0.903 4.425 0.102 1.53E+04 0.399
1.493 19.87 0.936 4.459 0.105 1.59E+04 0.402
1.512 19.93 1.000 4.466 0.112 1.72E+04 0.402
1.53 20.17 0.988 4.493 0.110 1.71E+04 0.405
1.549 20.18 1.070 4.494 0.119 1.87E+04 0.405
1.569 20.38 1.129 4.516 0.125 1.99E+04 0.407
1.589 20.49 1.205 4.529 0.133 2.14E+04 0.408
1.61 20.72 1.284 4.554 0.141 2.30E+04 0.410
1.631 20.95 1.319 4.579 0.144 2.38E+04 0.412
1.653 21.10 1.416 4.596 0.154 2.58E+04 0.413
1.675 21.32 1.506 4.620 0.163 2.77E+04 0.415
1.698 21.57 1.561 4.647 0.168 2.89E+04 0.418
1.722 21.79 1.691 4.671 0.181 3.16E+04 0.420
1.746 22.12 1.770 4.707 0.188 3.33E+04 0.423
1.771 22.44 1.925 4.741 0.203 3.64E+04 0.425
1.796 22.74 2.052 4.773 0.215 3.92E+04 0.428
1.823 23.08 2.213 4.810 0.230 4.25E+04 0.431
1.85 23.53 2.380 4.857 0.245 4.60E+04 0.435
1.878 23.95 2.607 4.901 0.266 5.06E+04 0.438
1.907 24.39 2.869 4.947 0.290 5.61E+04 0.442
1.937 24.85 3.177 4.995 0.318 6.24E+04 0.446
1.967 25.43 3.508 5.055 0.347 6.92E+04 0.450
1.999 26.14 3.979 5.127 0.388 7.86E+04 0.456
2.032 26.85 4.514 5.200 0.434 8.94E+04 0.462
2.066 27.71 5.234 5.287 0.495 1.04E+05 0.468
2.101 28.59 6.185 5.378 0.575 1.22E+05 0.475
2.137 29.65 7.497 5.488 0.683 1.48E+05 0.484
2.175 30.62 9.392 5.597 0.839 1.85E+05 0.494
tOO GROUP-IV SEMICONDUCTORS
Table A8-1a Continued (Si.GeJ .• , x=O.II).

eV 1:1 1:2 n k a (cm· 1) R
2.213 31.22 11.99 5.686 1.054 2.37E+05 0.504
2.254 30.58 15.08 5.687 1.326 3.03E+05 0.511
2.295 28.70 17.41 5.580 1.560 3.63E+05 0.512
2.339 26.81 18.64 5.453 1.709 4.05E+05 0.511
2.384 25.38 19.70 5.362 1.837 4.44E+05 0.511
2.43 23.70 20.83 5.256 1.982 4.88E+05 0.512
2.479 21.43 21.42 5.086 2.106 5.29E+05 0.509
2.53 19.34 21.23 4.902 2.165 5.55E+05 0.504
2.582 17.86 20.58 4.749 2.167 5.67E+05 0.497
2.637 16.84 19.91 4.632 2.149 5.75E+05 0.490
2.695 16.07 19.28 4.537 2.125 5.81E+05 0.484
2.754 15.58 18.79 4.471 2.101 5.87E+05 0.479
2.817 15.23 18.36 4.421 2.077 5.93E+05 0.475
2.883 15.08 18.09 4.395 2.058 6.01E+05 0.473
2.951 15.22 17.95 4.402 2.039 6.lOE+05 0.472
2.98 15.29 17.99 4.410 2.040 6.16E+05 0.472
3.008 15.36 18.13 4.423 2.049 6.25E+05 0.474
3.038 15.42 18.31 4.436 2.064 6.36E+05 0.475
3.068 15.45 18.54 4.449 2.084 6.48E+05 0.477
3.099 15.49 18.90 4.468 2.115 6.64E+05 0.480
3.13 15.47 19.26 4.482 2.149 6.82E+05 0.483
3.162 15.31 19.69 4.486 2.195 7.04E+05 0.486
3.195 15.11 20.11 4.487 2.241 7.26E+05 0.489
3.228 14.83 20.49 4.479 2.287 7.48E+05 0.492
3.262 14.57 20.93 4.476 2.338 7.73E+05 0.495
3.297 14.21 21.21 4.458 2.379 7.95E+05 0.497
3.332 13.88 21.54 4.444 2.423 8. 19E+05 0.499
3.368 13.45 21.82 4.420 2.468 8.43E+05 0.502
3.405 13.10 22.05 4.402 2.505 8.65E+05 0.503
3.443 12.77 22.27 4.384 2.540 8.87E+05 0.505
3.482 12.45 22.49 4.368 2.574 9.09E+05 0.507
3.521 12.12 22.76 4.353 2.614 9.33E+05 0.509
3.562 11.76 23.02 4.336 2.654 9.58E+05 0.512
3.603 11.47 23.32 4.328 2.694 9.84E+05 0.514
3.646 11.12 23.67 4.317 2.741 1.01E+06 0.517
3.689 10.84 24.07 4.315 2.789 1.04E+06 0.521
3.733 10.44 24.52 4.306 2.847 1.08E+06 0.525
3.779 10.01 24.97 4.296 2.906 l.l1E+06 0.529
3.826 9.599 25.57 4.296 2.976 1.l5E+06 0.534
3.873 9.023 26.24 4.288 3.060 1.20E+06 0.540
3.922 8.468 26.94 4.284 3.144 1.25E+06 0.547
3.973 7.728 27.84 4.279 3.253 1.31E+06 0.555
4.024 6.867 28.90 4.276 3.379 1.38E+06 0.564
4.077 5.750 30.24 4.274 3.538 1.46E+06 0.576
4.132 3.938 31.65 4.233 3.739 1.57E+06 0.591
4.159 2.764 32.41 4.201 3.858 1.63E+06 0.599
4.188 1.443 33.22 4.165 3.988 1.69E+06 0.609
4.216 -0.394 33.77 4.085 4.133 1.77E+06 0.619
4.245 -2.375 34.20 3.994 4.281 1.84E+06 0.631
4.274 -4.714 34.28 3.866 4.434 1.92E+06 0.643
A8 Sll...ICON-GERMANIUM ALLOY (Si.Gel.J 101
Table A8-1a Continued (Si.Ge, ... x=OD).

eV £1 £2 n k a (em' I) R
4.304 -7.261 33.74 3.691 4.570 1.99E+06 0.656
4.334 -9.923 32.28 3.453 4.674 2.05E+06 0.669
4.364 -12.00 30.33 3.211 4.723 2.09E+06 0.679
4.395 -13.52 28.00 2.964 4.723 2.1OE+06 0.688
4.427 -14.20 25.52 2.739 4.659 2.09E+06 0.693
4.459 -14.42 23.17 2.537 4.567 2.06E+06 0.696
4.491 -14.19 21.37 2.394 4.463 2.03E+06 0.695
4.524 -13.78 19.86 2.280 4.356 2.00E+06 0.693
4.557 -13.42 18.48 2.170 4.258 1.97E+06 0.692
4.591 -12.93 17.33 2.085 4.156 1.93E+06 0.689
4.625 -12.48 16.39 2.015 4.067 1.91E+06 0.686
4.66 -12.04 15.50 1.948 3.979 1.88E+06 0.682
4.695 -11.58 14.77 1.896 3.895 1.85E+06 0.678
4.731 -11.20 14.11 1.846 3.822 1.83E+06 0.675
4.767 -10.79 13.57 1.809 3.750 1.81E+06 0.670
4.804 -10.42 12.99 1.766 3.679 1.79E+06 0.667
4.842 -10.04 12.50 1.731 3.610 1.77E+06 0.662
4.88 -9.667 12.09 1.705 3.546 1.75E+06 0.657
4.919 -9.343 11.65 1.672 3.484 1.74E+06 0.653
4.958 -9.015 11.32 1.652 3.427 1.72E+06 0.648
4.998 -8.742 10.87 1.613 3.368 1.71E+06 0.645
5.039 -8.413 10.61 1.601 3.313 1.69E+06 0.639
5.08 -8.167 10.31 1.579 3.265 1.68E+06 0.635
5.122 -7.897 10.06 1.564 3.216 1.67E+06 0.630
5.165 -7.625 9.982 1.571 3.177 1.66E+06 0.624
Table A8-1b Optical constants of Si.Gel .• with x=0.20 at 300 K.

eV £1 £2 n k a (em· l) R
1 16.27 4.034
1.05 16.42 4.052
1.1 16.58 4.071
1.15 16.74 4.091
1.2 16.91 4.112
1.476 18.44 0.180 4.294 0.021 3. 14E+03 0.387
1.493 18.86 0.261 4.343 0.030 4.54E+03 0.391
1.512 18.94 0.331 4.352 0.038 5.82E+03 0.392
1.53 19.17 0.350 4.378 0.040 6.21E+03 0.395
1.549 19.26 0.448 4.389 0.051 8.01E+03 0.396
1.569 19.39 0.520 4.404 0.059 9.39E+03 0.397
1.589 19.53 0.592 4.420 0.067 1.08E+04 0.398
1.61 19.69 0.657 4.438 0.074 1.21E+04 0.400
1.631 19.88 0.749 4.460 0.084 1.39E+04 0.402
1.653 20.06 0.842 4.480 0.094 1.57E+04 0.403
1.675 20.24 0.954 4.500 0.106 1.80E+04 0.405
1.698 20.37 1.038 4.515 0.115 1.98E+04 0.406
1.722 20.53 1.097 4.533 0.121 2. llE+04 0.408
1.746 20.79 1.195 4.561 0.131 2.32E+04 0.410
1.771 21.02 1.303 4.587 0.142 2.55E+04 0.413
Table A8-1b Continued (Si.Ge} .., x=O.20).

eV EI E2 n k a (cm· l ) R
1.796 21.26 1.393 4.613 0.151 2.75E+04 0.415
1.823 21.52 1.485 4.642 0.160 2.96E+04 0.417
1.85 21.85 1.562 4.677 0.167 3. 13E+04 0.420
1.878 22.17 1.696 4.712 0.180 3.43E+04 0.423
1.907 22.54 1.844 4.752 0.194 3.75E+04 0.426
1.937 22.99 2.044 4.799 0.213 4. 18E+04 0.430
1.967 23.42 2.229 4.845 0.230 4.59E+04 0.434
1.999 24.01 2.532 4.907 0.258 5.23E+04 0.439
2.032 24.55 2.879 4.963 0.290 5.97E+04 0.443
2.066 25.16 3.288 5.027 0.327 6.85E+04 0.448
2.101 25.83 3.812 5.096 0.374 7.97E+04 0.454
2.137 26.61 4.410 5.176 0.426 9.23E+04 0.460
2.175 27.66 5.304 5.283 0.502 1. llE+05 0.468
2.213 28.63 6.450 5.384 0.599 1.34E+05 0.476
2.254 29.68 8.159 5.498 0.742 1.70E+05 0.486
2.295 30.37 10.52 5.591 0.941 2. 19E+05 0.495
2.339 30.08 13.52 5.615 1.204 2.85E+05 0.503
2.384 28.52 15.86 5.530 1.434 3.47E+05 0.505
2.43 26.84 17.27 5.420 1.593 3.93E+05 0.505
2.479 25.36 18.45 5.325 1.732 4.35E+OS 0.50S
2.53 23.S9 19.56 S.207 1.878 4.82E+OS 0.50S
2.582 21.53 20.00 5.046 1.982 5. 19E+OS O.SOl
2.637 19.73 19.80 4.883 2.027 S.42E+OS 0.496
2.695 18.54 19.35 4.761 2.032 5.5SE+05 0.490
2.7S4 17.60 18.93 4.661 2.031 5.67E+OS 0.48S
2.817 16.98 18.54 4.589 2.020 S.77E+05 0.480
2.883 16.61 18.27 4.544 2.010 5.87E+05 0.477
2.9S1 16.54 18.10 4.531 1.997 5.98E+05 0.476
2.98 16.52 18.12 4.530 2.000 6.04E+05 0.476
3.008 16.52 18.23 4.534 2.010 6. 13E+05 0.477
3.038 16.54 18.38 4.S42 2.023 6.23E+OS 0.478
3.068 16.57 18.59 4.554 2.041 6.3SE+OS 0.480
3.099 17.41 19.24 4.656 2.066 6.49E+05 0.486
3.13 16.54 19.26 4.578 2.103 6.67E+OS 0.485
3.162 16.37 19.69 4.581 2.149 6.89E+05 0.488
3.195 16.17 20.11 4.581 2.195 7. llE+05 0.491
3.228 15.87 20.51 4.572 2.243 7.34E+05 0.493
3.262 15.54 20.89 4.559 2.291 7.S8E+05 0.496
3.297 15.25 21.24 4.550 2.334 7.80E+05 0.498
3.332 14.80 21.58 4.526 2.384 8.05E+05 0.500
3.368 14.36 21.83 4.500 2.426 8.28E+05 0.502
3.405 13.99 22.08 4.479 2.465 8.51E+05 0.504
3.443 13.65 22.29 4.460 2.499 8.72E+05 0.505
3.482 13.31 22.53 4.443 2.535 8.95E+05 0.507
3.521 12.95 22.77 4.424 2.573 9.19E+05 0.509
3.562 12.57 23.04 4.405 2.615 9.44E+05 0.511
3.603 12.29 23.38 4.399 2.657 9.71E+05 0.514
3.646 11.92 23.71 4.385 2.703 9.99E+05 0.517
3.689 11.64 24.09 4.382 2.749 1.03E+06 0.520
3.733 11.21 24.54 4.370 2.808 1.06E+06 0.524
Table A8·1b Continued (Si.Gel_., x=020)_

eV £1 £2 n k a (em-I) R
3.779 10.76 25.01 4.358 2.869 1.10E+06 0.528
3.826 10.32 25.65 4.357 2.944 1.14E+06 0.534
3.873 9.760 26.33 4.350 3.027 1.19E+06 0.540
3.922 9.163 27.09 4.345 3.117 1.24E+06 0.546
3.973 8.336 28.00 4.333 3.231 l.30E+06 0.554
4.024 7.519 29.07 4.333 3.355 l.37E+06 0.563
4.077 6.324 30.38 4.322 3.515 1.45E+06 0.575
4.132 4.405 31.81 4.273 3.722 l.56E+06 0.590
4.159 3.212 32.48 4.234 3.836 1.62E+06 0.598
4.188 1.884 33.24 4.194 3.963 1.68E+06 0.607
4.216 -0.074 33.66 4.098 4.107 1.76E+06 0.618
4.245 -2.030 34.00 4.002 4.248 1.83E+06 0.628
4.274 -4.298 33.89 3.864 4.385 1.90E+06 0.640
4.304 -6.770 33.25 3.685 4.511 1.97E+06 0.652
4.334 -9.235 31.69 3.448 4.596 2.02E+06 0.663
4.364 -11.12 29.78 3.215 4.632 2.05E+06 0.672
4.395 -12.41 27.59 2.987 4.619 2.06E+06 0.679
4.427 -13.14 25.31 2.773 4.564 2.05E+06 0.684
4.459 -13.29 23.27 2.599 4.477 2.02E+06 0.685
4.491 -13.19 21.55 2.457 4.385 2.00E+06 0.685
4.524 -12.81 20.05 2.343 4.278 1.96E+06 0.682
4.557 -12.48 18.66 2.233 4.179 1.93E+06 0.680
4.591 -12.09 17.56 2.148 4.087 1.90E+06 0.677
4.625 -11.68 16.65 2.081 4.001 1.88E+06 0.674
4.66 -11.30 15.81 2.017 3.920 1.85E+06 0.670
4.695 -10.86 15.01 1.958 3.833 1.82E+06 0.666
4.731 -10.47 14.41 1.916 3.760 1.80E+06 0.661
4.767 -10.08 13.70 1.862 3.680 1.78E+06 0.657
4.804 -9.709 13.22 1.829 3.613 1.76E+06 0.653
4.842 -9.328 12.66 1.788 3.539 1.74E+06 0.648
4.88 -8.977 12.34 1.772 3.481 1.72E+06 0.642
4.919 -8.624 11.87 1.739 3.413 1.70E+06 0.637
4.958 -8.325 11.45 1.708 3.353 1.69E+06 0.632
4.998 -7.975 11.11 1.688 3.290 1.67E+06 0.626
5.039 -7.744 10.88 1.675 3.248 1.66E+06 0.622
5.08 -7.431 10.56 1.655 3.189 1.64E+06 0.616
5.122 -7.200 10.21 1.627 3.138 1.63E+06 0.611
5.165 -7.029 10.10 1.624 3.109 1.63E+06 0.608
Table AS-Ie Optical constants of Si.Gel_. with x=028 a, 300 K.

eV £1 £2 n k a (em-I) R
1 15.72 3.964
1.05 15.85 3.981
1.1 15.99 3.999
1.15 16.14 4.017
1.2 16.29 4.036
1.25 16.46 4.057
1.476 17.35 0.308 4.166 0.037 5.54E+03 0.376
Table A8·Ie Continued (Si.Ge} ... x=O.28).

eV £1 £2 n k a (cm·1) R
1.493 17.77 0.253 4.216 0.030 4.54E+03 0.380
1.512 17.80 0.270 4.219 0.032 4.90E+03 0.380
1.53 17.98 0.314 4.240 0.037 5.74E+03 0.382
1.549 18.04 0.357 4.248 0.042 6.60E+03 0.383
1.569 18.13 0.358 4.258 0.042 6.68E+03 0.384
1.589 18.21 0.359 4.268 0.042 6.77E+03 0.385
1.61 18.40 0.395 4.290 0.046 7.51E+03 0.387
1.631 18.55 0.448 4.307 0.052 8.60E+03 0.388
1.653 18.62 0.457 4.315 0.053 8.88E+03 0.389
1.675 18.77 0.451 4.333 0.052 8.83E+03 0.391
1.698 19.19 0.491 4.381 0.056 9.64E+03 0.395
1.722 19.45 0.503 4.411 0.057 9.95E+03 0.397
1.746 19.68 0.612 4.437 0.069 1.22E+04 0.400
1.771 19.89 0.705 4.461 0.079 1.42E+04 0.402
1.796 20.17 0.827 4.492 0.092 1.68E+04 0.404
1.823 20.41 0.949 4.519 0.105 1.94E+04 0.407
1.85 20.68 1.037 4.549 0.114 2. 14E+04 0.409
1.878 20.97 1.173 4.581 0.128 2.44E+04 0.412
1.907 21.30 1.311 4.617 0.142 2.75E+04 0.415
1.937 21.64 1.508 4.655 0.162 3. 18E+04 0.418
1.967 22.00 1.690 4.694 0.180 3.59E+04 0.421
1.999 22.48 1.917 4.746 0.202 4.09E+04 0.426
2.032 22.88 2.165 4.789 0.226 4.66E+04 0.429
2.066 23.40 2.451 4.844 0.253 5.30E+04 0.434
2.101 23.98 2.806 4.905 0.286 6.09E+04 0.439
2.137 24.53 3.206 4.963 0.323 7.00E+04 0.443
2.175 25.25 3.809 5.039 0.378 8.33E+04 0.449
2.213 26.05 4.446 5.122 0.434 9.74E+04 0.456
2.254 26.91 5.328 5.213 0.511 1.17E+05 0.463
2.295 27.87 6.537 5.315 0.615 1.43E+05 0.472
2.339 28.78 8.225 5.418 0.759 1.80E+05 0.481
2.384 29.18 10.41 5.485 0.949 2.29E+05 0.489
2.43 28.82 12.98 5.497 1.181 2.91E+05 0.496
2.479 27.44 15.12 5.421 1.395 3.51E+05 0.498
2.53 26.06 16.48 5.334 1.545 3.96E+05 0.498
2.582 24.70 17.78 5.250 1.693 4.43E+05 0.499
2.637 22.96 18.74 5.128 1.827 4.88E+05 0.498
2.695 21.27 19.02 4.990 1.906 5.21E+05 0.495
2.754 19.89 18.97 4.867 1.949 5.44E+05 0.491
2.817 18.85 18.83 4.769 1.974 5.64E+05 0.487
2.883 18.17 18.64 4.701 1.983 5.80E+05 0.484
2.951 17.77 18.53 4.661 1.988 5.95E+05 0.482
2.98 17.69 18.58 4.655 1.996 6.03E+05 0.482
3.008 17.62 18.66 4.652 2.006 6. 12E+05 0.483
3.038 17.54 18.81 4.651 2.022 6.23E+05 0.484
3.068 17.53 19.01 4.658 2.041 6.35E+05 0.485
3.099 17.48 19.30 4.665 2.069 6.50E+05 0.487
3.13 17.40 19.67 4.672 2.105 6.68E+05 0.489
3.162 17.21 20.10 4.673 2.151 6.90E+05 0.492
3.195 16.95 20.55 4.668 2.201 7. 13E+05 0.495
A8 SILICON-GERMANIUM ALLOY (Si.Ge l .•) 105
Table AS-Ie Continued (Si.GeJ ... x=O.28).

eV £1 £2 n k a. (em· l ) R
3.228 16.62 20.95 4.656 2.250 7.36E+05 0.497
3.262 16.22 21.36 4.639 2.302 7.61E+05 0.500
3.297 15.85 21.70 4.622 2.347 7.84E+05 0.502
3.332 15.37 22.04 4.596 2.398 8.lOE+05 0.504
3.368 14.93 22.31 4.570 2.441 8.34E+05 0.506
3.405 14.46 22.56 4.542 2.484 8.58E+05 0.507
3.443 14.05 22.77 4.517 2.520 8.80E+05 0.509
3.482 13.71 22.98 4.498 2.554 9.02E+05 0.510
3.521 13.33 23.22 4.478 2.593 9.26E+05 0.512
3.562 12.91 23.51 4.457 2.637 9.52E+05 0.515
3.603 12.58 23.82 4.445 2.679 9.79E+05 0.517
3.646 12.22 24.15 4.432 2.725 1.01E+06 0.520
3.689 11.89 24.56 4.426 2.774 1.04E+06 0.523
3.733 11.42 24.96 4.408 2.831 1.07E+06 0.527
3.779 10.97 25.49 4.400 2.897 1.11E+06 0.531
3.826 10.50 26.15 4.398 2.973 1.15E+06 0.537
3.873 9.898 26.81 4.386 3.056 1.20E+06 0.543
3.922 9.298 27.58 4.382 3.147 1.25E+06 0.549
3.973 8.434 28.47 4.366 3.260 1.31E+06 0.557
4.024 7.482 29.59 4.359 3.394 1.38E+06 0.567
4.077 6.251 30.92 4.347 3.556 1.47E+06 0.578
4.132 4.180 32.29 4.286 3.767 1.58E+06 0.593
4.159 2.911 33.00 4.245 3.887 1.64E+06 0.602
4.188 1.576 33.68 4.201 4.009 1.70E+06 0.610
4.216 -0.429 34.10 4.103 4.155 1.78E+06 0.621
4.245 -2.505 34.35 3.996 4.298 1.85E+06 0.632
4.274 -4.851 34.09 3.846 4.432 1.92E+06 0.643
4.304 -7.197 33.37 3.670 4.546 1.98E+06 0.654
4.334 -9.642 31.67 3.425 4.623 2.03E+06 0.665
4.364 -11.38 29.77 3.201 4.650 2.06E+06 0.674
4.395 -12.60 27.55 2.975 4.631 2.068+06 0.681
4.427 -13.20 25.35 2.773 4.571 2.058+06 0.684
4.459 -13.32 23.32 2.601 4.482 2.03E+06 0.685
4.491 -13.30 21.63 2.459 4.398 2.00E+06 0.686
4.524 -13.04 20.23 2.348 4.307 1.988+06 0.684
4.557 -12.74 18.84 2.237 4.212 1.95E+06 0.683
4.591 -12.33 17.65 2.145 4.115 1.92E+06 0.680
4.625 -11.92 16.78 2.081 4.031 1.89E+06 0.677
4.66 -11.53 15.84 2.008 3.945 1.86E+06 0.674
4.695 -11.12 15.09 1.953 3.864 1.84E+06 0.670
4.731 -10.75 14.46 1.906 3.792 1.82E+06 0.666
4.767 -10.32 13.86 1.866 3.715 1.80E+06 0.661
4.804 -9.919 13.25 1.821 3.638 1.778+06 0.656
4.842 -9.587 12.74 1.783 3.573 1.75E+06 0.652
4.88 -9.236 12.41 1.766 3.515 1.74E+06 0.647
4.919 -8.937 11.90 1.724 3.451 1.72E+06 0.643
4.958 -8.599 11.45 1.691 3.385 1.70E+06 0.638
4.998 -8.307 11.16 1.674 3.333 1.69E+06 0.633
5.039 -7.934 10.86 1.661 3.270 1.67E+06 0.626
5.08 -7.698 10.54 1.636 3.221 1.668+06 0.622
Table A8·Ie Continued (Si.Ge} .•, x=0.28).

eV £1 £2 n k a (cm· l ) R
5.122 -7.417 10.38 1.634 3.176 1.65E+06 0.616
5.165 -7.146 10.41 1.655 3.144 1.65E+06 0.609
Table A8·Id Optical constants of Si.Ge} .• with x=0.48 at 300 K.

eV £1 £2 n k a (cm· l ) R
1 14.49 3.807 0.349
1.05 14.60 3.821 0.353
1.1 14.71 3.836 0.355
1.15 14.83 3.851 0.355
1.2 14.95 3.867 0.356
1.25 15.08 3.883 0.355
1.3 15.21 3.900 0.356
1.476 15.08 0.194 3.883 0.025 3.74E+03 0.349
1.493 15.39 0.126 3.923 0.016 2.42E+03 0.353
1.512 15.60 0.126 3.950 0.016 2.45E+03 0.355
1.53 15.60 0.166 3.950 0.021 3.26E+03 0.355
1.549 15.64 0.214 3.955 0.027 4.24E+03 0.356
1.569 15.62 0.253 3.952 0.032 5.09E+03 0.355
1.589 15.66 0.214 3.957 0.027 4.35E+03 0.356
1.61 15.77 0.159 3.971 0.020 3.26E+03 0.357
1.631 15.88 0.151 3.985 0.019 3.14E+03 0.359
1.653 16.03 0.160 4.004 0.020 3.35E+03 0.360
1.675 16.17 0.185 4.021 0.023 3.91E+03 0.362
1.698 16.29 0.226 4.036 0.028 4.82E+03 0.363
1.722 16.40 0.227 4.050 0.028 4.89E+03 0.365
1.746 16.55 0.228 4.068 0.028 4.96E+03 0.366
1.771 16.69 0.196 4.085 0.024 4.31E+03 0.368
1.796 16.94 0.189 4.116 0.023 4. 19E+03 0.371
1.823 17.17 0.274 4.144 0.033 6.lOE+03 0.374
1.85 17.31 0.374 4.161 0.045 8.44E+03 0.375
1.878 17.49 0.443 4.183 0.053 1.0IE+04 0.377
1.907 17.69 0.479 4.206 0.057 1.10E+04 0.379
1.937 17.87 0.516 4.228 0.061 1.20E+04 0.381
1.967 18.09 0.604 4.254 0.071 1.42E+04 0.384
1.999 18.38 0.669 4.288 0.078 1.58E+04 0.387
2.032 18.59 0.699 4.312 0.081 1.67E+04 0.389
2.066 18.88 0.695 4.346 0.080 1.68E+04 0.392
2.101 19.28 0.729 4.392 0.083 1.77E+04 0.396
2.137 19.73 0.773 4.443 0.087 1.88E+04 0.400
2.175 20.26 0.882 4.502 0.098 2. 16E+04 0.405
2.213 20.78 1.149 4.560 0.126 2.83E+04 0.410
2.254 21.24 1.393 4.611 0.151 3.45E+04 0.415
2.295 21.81 1.598 4.673 0.171 3.98E+04 0.420
2.339 22.51 1.814 4.748 0.191 4.53E+04 0.426
2.384 23.34 2.186 4.836 0.226 5.46E+04 0.433
2.43 24.29 2.764 4.936 0.280 6.90E+04 0.441
2.479 25.28 3.478 5.040 0.345 8.67E+04 0.449
2.53 26.46 4.501 5.162 0.436 1.12E+05 0.459
A8 SILICON-GERMANIUM ALLOY (SixGe,.x) 107
Table A8-1d Continued (SixGeJ.x. x=OA8).

eV £, £2 n k (X (em") R
2.582 27.88 6.108 5.311 0.575 1.5IE+05 0.471
2.637 29.07 8.488 5.448 0.779 2.08E+05 0.483
2.695 29.31 11.74 5.517 1.064 2.91E+05 0.494
2.754 28.07 14.70 5.466 1.345 3.76E+05 0.499
2.817 26.24 16.73 5.355 1.562 4.46E+05 0.500
2.883 24.35 17.96 5.225 1.719 5.02E+05 0.499
2.951 22.66 18.56 5.097 1.821 5.45E+05 0.496
2.98 22.13 18.69 5.055 1.849 5.59E+05 0.496
3.008 21.69 18.83 5.021 1.875 5.72E+05 0.495
3.038 21.34 18.98 4.995 1.900 5.85E+05 0.495
3.068 21.02 19.18 4.974 1.928 6.00E+05 0.495
3.099 20.75 19.45 4.959 1.961 6. 16E+05 0.496
3.13 20.52 19.77 4.951 1.997 6.34E+05 0.497
3.162 20.21 20.21 4.939 2.046 6.56E+05 0.499
3.195 19.81 20.69 4.922 2.102 6.81E+05 0.501
3.228 19.42 21.14 4.905 2.155 7.05E+05 0.503
3.262 18.99 21.60 4.886 2.210 7.31E+05 0.506
3.297 18.45 22.08 4.859 2.272 7.59E+05 0.508
3.332 17.87 22.48 4.826 2.329 7.87E+05 0.510
3.368 17.27 22.74 4.787 2.375 8.11E+05 0.511
3.405 16.68 22.94 4.746 2.417 8.34E+05 0.511
3.443 16.17 23.15 4.712 2.457 8.58E+05 0.513
3.482 15.71 23.36 4.683 2.494 8.80E+05 0.514
3.521 15.25 23.57 4.654 2.532 9.04E+05 0.515
3.562 14.87 23.83 4.635 2.571 9.28E+05 0.517
3.603 14.52 24.14 4.620 2.613 9.55E+05 0.519
3.646 14.10 24.49 4.602 2.661 9.84E+05 0.521
3.689 13.72 24.90 4.591 2.712 1.0 1E+06 0.524
3.733 13.34 25.36 4.582 2.767 1.05E+06 0.528
3.779 12.90 25.92 4.575 2.833 1.09E+06 0.532
3.826 12.42 26.56 4.568 2.907 1.13E+06 0.537
3.873 11.89 27.23 4.561 2.985 1.17E+06 0.542
3.922 11.27 28.06 4.556 3.080 1.22E+06 0.548
3.973 10.56 29.06 4.554 3.191 1.29E+06 0.556
4.024 9.661 30.30 4.553 3.327 1.36E+06 0.565
4.077 8.348 31.80 4.540 3.502 1.45E+06 0.577
4.132 6.476 33.55 4.508 3.721 1.56E+06 0.592
4.159 5.322 34.48 4.484 3.845 1.62E+06 0.600
4.188 3.661 35.31 4.425 3.990 1.69E+06 0.610
4.216 1.844 36.08 4.357 4.140 1.77E+06 0.620
4.245 -0.572 36.47 4.237 4.304 1.85E+06 0.631
4.274 -3.035 36.48 4.097 4.452 1.93E+06 0.642
4.304 -5.834 35.72 3.896 4.584 2.00E+06 0.654
4.334 -8.351 34.44 3.680 4.679 2.06E+06 0.664
4.364 -10.48 32.44 3.436 4.721 2.09E+06 0.672
4.395 -11.99 30.26 3.206 4.719 2.10E+06 0.679
4.427 -12.92 27.96 2.990 4.675 2.10E+06 0.683
4.459 -13.25 25.79 2.806 4.596 2.08E+06 0.685
4.491 -13.44 23.94 2.647 4.522 2.06E+06 0.686
4.524 -13.30 22.22 2.510 4.427 2.03E+06 0.685
Table A8·ld Continued (Si.GeJ ... x=0.48).

eV £1 £2 n k a (cm·1) R
4.557 -13.11 20.84 2.399 4.343 2.0IE+06 0.684
4.591 -12.85 19.56 2.297 4.258 1.98E+06 0.683
4.625 -12.48 18.44 2.212 4.168 1.95E+06 0.680
4.66 -12.08 17.39 2.132 4.078 1.93E+06 0.677
4.695 -11.63 16.51 2.070 3.989 1.90E+06 0.673
4.731 -11.28 15.70 2.007 3.912 1.88E+06 0.670
4.767 -11.01 15.04 1.953 3.850 1.86E+06 0.668
4.804 -10.53 14.39 1.910 3.766 1.83E+06 0.663
4.842 -10.30 13.81 1.861 3.710 1.82E+06 0.661
4.88 -9.890 13.29 1.827 3.637 1.80E+06 0.656
4.919 -9.498 12.76 1.790 3.564 1.78E+06 0.650
4.958 -9.216 12.28 1.752 3.505 1.76E+06 0.647
4.998 -8.896 11.91 1.728 3.447 1.75E+06 0.642
5.039 -8.507 11.58 1.712 3.382 1.73E+06 0.636
5.08 -8.272 11.39 1.704 3.343 I.72E+06 0.631
5.122 -8.037 11.44 1.724 3.318 I.72E+06 0.626
5.165 -7.590 11.46 1.754 3.266 1.71E+06 0.616
Table AS-Ie Optical constants of Si.GeJ .• with x=0.65 at 300 K.

eV £1 £2 n k a (cm· 1) R
1 13.64 3.693 0.329
1.05 13.73 3.705 0.331
1.1 13.82 3.717 0.332
1.15 13.92 3.730 0.333
1.2 14.02 3.744 0.335
1.25 14.13 3.758 0.336
1.3 14.24 3.773 0.338
1.35 14.35 3.789 0.339
1.476 14.78 0.100 3.844 0.013 1.94E+03 0.345
1.493 14.94 0.124 3.865 0.016 2.42E+03 0.347
1.512 14.97 0.132 3.869 0.017 2.6IE+03 0.347
1.53 15.11 0.117 3.887 0.Dl5 2.33E+03 0.349
1.549 15.13 0.109 3.890 0.014 2.20E+03 0.349
1.569 15.21 0.125 3.900 0.016 2.55E+03 0.350
1.589 15.28 0.117 3.909 0.Dl5 2.42E+03 0.351
1.61 15.38 0.126 3.922 0.016 2.61E+03 0.352
1.631 15.48 0.149 3.934 0.019 3. 14E+03 0.354
1.653 15.55 0.158 3.944 0.020 3.35E+03 0.355
1.675 15.63 0.166 3.953 0.021 3.57E+03 0.355
1.698 15.74 0.175 3.968 0.022 3.79E+03 0.357
1.722 15.88 0.175 3.985 0.022 3.84E+03 0.359
1.746 16.02 0.208 4.002 0.026 4.60E+03 0.360
1.771 16.13 0.225 4.016 0.028 5.03E+03 0.362
1.796 16.30 0.258 4.037 0.032 5.83E+03 0.364
1.823 16.42 0.292 4.052 0.036 6.65E+03 0.365
1.85 16.56 0.326 4.069 0.040 7.50E+03 0.367
1.878 16.70 0.351 4.087 0.043 8. 19E+03 0.368
1.907 16.86 0.353 4.106 0.043 8.3IE+03 0.370
Table A8-Ie Continued (Si.Gel_ .. x=O.65).

eV el e2 n k a (em-I) R
1.937 17.04 0.372 4.128 0.045 8.84E+03 0.372
1.967 17.24 0.374 4.152 0.045 8.98E+03 0.374
1.999 17.48 0.385 4.181 0.046 9.32E+03 0.377
2.032 17.75 0.447 4.214 0.053 1.09E+04 0.380
2.066 18.03 0.501 4.246 0.059 1.24E+04 0.383
2.101 18.29 0.556 4.277 0.065 1.38E+04 0.386
2.137 18.61 0.613 4.315 0.071 1.54E+04 0.389
2.175 18.99 0.697 4.359 0.080 1.76E+04 0.393
2.213 19.35 0.792 4.400 0.090 2.02E+04 0.397
2.254 19.78 0.899 4.449 0.101 2.3IE+04 0.401
2.295 20.26 1.026 4.502 0.114 2.65E+04 0.405
2.339 20.82 1.150 4.565 0.126 2.99E+04 0.411
2.384 21.38 1.351 4.626 0.146 3.53E+04 0.416
2.43 22.09 1.552 4.703 0.165 4.07E+04 0.422
2.479 22.91 1.878 4.790 0.196 4.93E+04 0.429
2.53 23.77 2.294 4.881 0.235 6.03E+04 0.436
2.582 24.79 2.843 4.987 0.285 7.46E+04 0.445
2.637 26.06 3.541 5.117 0.346 9.25E+04 0.455
2.695 27.54 4.560 5.266 0.433 1.18E+05 0.466
2.754 29.30 6.149 5.442 0.565 1.58E+05 0.479
2.817 31.14 8.675 5.633 0.770 2.20E+05 0.495
2.883 32.24 12.33 5.777 1.067 3. 12E+05 0.509
2.951 31.70 16.96 5.816 1.458 4.36E+05 0.521
2.98 30.99 18.60 5.794 1.605 4.85E+05 0.524
3.008 29.99 20.13 5.749 1.751 5.34E+05 0.527
3.038 28.81 21.45 5.689 1.885 5.81E+05 0.529
3.068 27.57 22.50 5.619 2.002 6.23E+05 0.530
3.099 26.28 23.37 5.543 2.108 6.62E+05 0.531
3.13 25.09 24.02 5.469 2.196 6.97E+05 0.531
3.162 23.99 24.60 5.401 2.277 7.30E+05 0.532
3.195 22.99 25.06 5.338 2.347 7.60E+05 0.533
3.228 21.93 25.45 5.269 2.415 7.90E+05 0.533
3.262 20.75 25.82 5.190 2.487 8.22E+05 0.533
3.297 19.70 26.03 5.116 2.544 8.50E+05 0.534
3.332 18.73 26.16 5.045 2.593 8.76E+05 0.534
3.368 17.80 26.21 4.974 2.635 9.00E+05 0.533
3.405 16.96 26.22 4.909 2.671 9.22E+05 0.533
3.443 16.28 26.23 4.855 2.701 9.43E+05 0.533
3.482 15.69 26.23 4.809 2.727 9.63E+05 0.533
3.521 15.03 26.32 4.761 2.764 9.87E+OS 0.534
3.562 14.52 26.44 4.727 2.797 1.01E+06 0.535
3.603 14.10 26.63 4.703 2.831 1.03E+06 0.536
3.646 13.47 26.91 4.667 2.883 1.07E+06 0.538
3.689 13.03 27.23 4.649 2.929 1.10E+06 0.541
3.733 12.55 27.60 4.630 2.981 l.13E+06 0.544
3.779 11.92 28.09 4.606 3.049 l.17E+06 0.548
3.826 11.27 28.65 4.586 3.124 1.21E+06 0.552
3.873 10.64 29.25 4.570 3.200 1.26E+06 0.557
3.922 9.844 30.02 4.552 3.298 1.31E+06 0.563
3.973 8.902 30.96 4.534 3.414 1.38E+06 0.571
Table AS-Ie Continued (Si.Ge/ ... x=0.65).

eV £1 £2 n k a (em· l ) R
4.024 7.841 32.13 4.523 3.552 1.45E+06 0.580
4.077 6.386 33.57 4.503 3.727 1.54E+06 0.592
4.132 4.106 35.14 4.443 3.954 1.66E+06 0.607
4.159 2.647 35.94 4.398 4.086 1.72E+06 0.616
4.188 0.908 36.65 4.334 4.228 1.79E+06 0.626
4.216 -1.283 37.08 4.232 4.381 1.87E+06 0.636
4.245 -3.877 37.18 4.093 4.542 1.95E+06 0.648
4.274 -6.605 36.69 3.916 4.684 2.03E+06 0.660
4.304 -9.295 35.43 3.697 4.792 2.09E+06 0.672
4.334 -11.63 33.70 3.466 4.862 2. 14E+06 0.682
4.364 -13.46 31.20 3.203 4.870 2. 15E+06 0.690
4.395 -14.42 28.88 2.988 4.832 2. 15E+06 0.696
4.427 -14.96 26.46 2.778 4.762 2. 14E+06 0.699
4.459 -15.07 24.27 2.598 4.671 2. llE+06 0.701
4.491 -15.06 22.38 2.441 4.585 2.09E+06 0.703
4.524 -14.73 20.84 2.323 4.486 2.06E+06 0.702
4.557 -14.33 19.42 2.214 4.385 2.03E+06 0.700
4.591 -13.88 18.26 2.128 4.290 2.00E+06 0.698
4.625 -13.42 17.00 2.030 4.188 1.96E+06 0.696
4.66 -12.99 16.16 1.968 4.106 1.94E+06 0.693
4.695 -12.42 15.36 1.915 4.011 1.91E+06 0.688
4.731 -12.03 14.60 1.856 3.934 1.89E+06 0.686
4.767 -11.56 13.88 1.803 3.848 1.86E+06 0.682
4.804 -11.14 13.36 1.769 3.777 1.84E+06 0.677
4.842 -10.71 12.87 1.737 3.705 1.82E+06 0.673
4.88 -10.31 12.44 1.710 3.638 1.80E+06 0.668
4.919 -9.954 11.97 1.675 3.572 1.78E+06 0.664
4.958 -9.581 11.62 1.655 3.510 1.76E+06 0.658
4.998 -9.319 11.32 1.635 3.463 1.75E+06 0.655
5.039 -8.901 10.97 1.616 3.393 1.73E+06 0.648
5.08 -8.666 10.73 1.601 3.351 1.73E+06 0.644
5.122 -8.433 10.41 1.576 3.304 1.72E+06 0.641
5.165 -8.228 10.28 1.572 3.271 1.7IE+06 0.637
Table A8-lfOptical constants ofSi.Ge/ .• withx=0.B5 at 300 K.

eV £1 £2 n k a (em· l ) R
1 12.83 3.581 0.317
1.05 12.90 3.592 0.319
1.1 12.98 3.603 0.320
1.15 13.06 3.614 0.321
1.2 13.15 3.626 0.322
1.25 13.24 3.638 0.324
1.3 13.33 3.651 0.325
1.35 13.43 3.664 0.326
1.4 13.5 3.678 0.328
1.45 13.64 3.693 0.329
1.476 14.06 0.030 3.750 0.004 5.98E+02 0.335
1.493 14.08 0.053 3.752 0.007 1.06E+03 0.335
A8 Sll..ICON-GERMANIUM ALLOY (Si.Gel .•) 111
Table A8-ljContinued (Si.Gel ... x=O.85).

eV £1 £2 n k a (cm· l) R
1.512 14.08 0.068 3.753 0.009 1.38E+03 0.335
1.53 14.13 0.060 3.759 0.008 1.24E+03 0.336
1.549 14.17 0.Q75 3.764 0.010 1.57E+03 0.337
1.569 14.23 0.060 3.772 0.008 1.27E+03 0.337
1.589 14.28 0.076 3.779 0.010 1.61E+03 0.338
1.61 14.32 0.068 3.784 0.009 1.47E+03 0.339
1.631 14.39 0.083 3.793 0.011 1.82E+03 0.340
1.653 14.46 0.076 3.803 0.010 1.68E+03 0.341
1.675 14.56 0.069 3.816 0.009 1.53E+03 0.342
1.698 14.68 0.069 3.831 0.009 1.55E+03 0.343
1.722 14.68 0.100 3.832 0.013 2.27E+03 0.344
1.746 14.79 0.069 3.846 0.009 1.59E+03 0.345
1.771 14.88 0.023 3.857 0.003 5.39E+02 0.346
1.796 15.02 0.000 3.876 0.000 O.OOE+OO 0.348
1.823 15.14 0.054 3.891 0.007 1.29E+03 0.349
1.85 15.24 0.023 3.904 0.003 5.63E+02 0.351
1.878 15.37 0.031 3.921 0.004 7.62E+02 0.352
1.907 15.53 0.032 3.941 0.004 7.73E+02 0.354
1.937 15.75 0.079 3.969 0.010 1.96E+03 0.357
1.967 15.82 0.127 3.977 0.016 3.19E+03 0.358
1.999 16.03 0.104 4.004 0.013 2.63E+03 0.360
2.032 16.17 0.161 4.021 0.020 4. 12E+03 0.362
2.066 16.36 0.146 4.045 0.018 3.77E+03 0.364
2.101 16.61 0.171 4.076 0.021 4.47E+03 0.367
2.137 16.82 0.189 4.101 0.023 4.98E+03 0.370
2.175 17.11 0.223 4.136 0.027 5.95E+03 0.373
2.213 17.39 0.225 4.170 0.027 6.06E+03 0.376
2.254 17.71 0.286 4.209 0.034 7.77E+03 0.380
2.295 17.97 0.331 4.239 0.039 9.08E+03 0.382
2.339 18.31 0.325 4.279 0.038 9.0 1E+03 0.386
2.384 18.76 0.381 4.332 0.044 1.06E+04 0.391
2.43 19.27 0.465 4.390 0.053 1.31E+04 0.396
2.479 19.82 0.623 4.452 0.070 1.76E+04 0.401
2.53 20.39 0.750 4.516 0.083 2.13E+04 0.406
2.582 21.10 0.901 4.595 0.098 2.57E+04 0.413
2.637 21.90 1.142 4.681 0.122 3.26E+04 0.420
2.695 22.75 1.355 4.772 0.142 3.88E+04 0.427
2.754 23.91 1.615 4.893 0.165 4.61E+04 0.437
2.817 25.25 2.072 5.029 0.206 5.88E+04 0.447
2.883 26.83 2.645 5.186 0.255 7.45E+04 0.459
2.951 29.23 3.803 5.418 0.351 1.05E+05 0.475
2.98 30.22 4.443 5.512 0.403 1.22E+05 0.482
3.008 31.27 5.241 5.611 0.467 1.42E+05 0.489
3.038 32.48 6.263 5.725 0.547 1.68E+05 0.497
3.068 33.71 7.606 5.842 0.651 2.02E+05 0.505
3.099 34.84 9.324 5.954 0.783 2.46E+05 0.514
3.13 35.87 11.41 6.063 0.941 2.99E+05 0.522
3.162 36.62 13.98 6.157 1.135 3.64E+05 0.531
3.195 36.93 16.87 6.226 1.355 4.39E+05 0.539
3.228 36.57 19.98 6.255 1.597 5.23E+05 0.547
Table A8-1fContinued (Si.Ge/ ... x=O.85).

eV £1 £2 n k a. (em· 1) R
3.262 35.35 23.37 6.234 1.874 6.20E+05 0.553
3.297 33.19 26.30 6.146 2.140 7.15E+05 0.558
3.332 30.45 28.17 5.997 2.349 7.94E+05 0.560
3.368 27.70 29.17 5.828 2.503 8.55E+05 0.559
3.405 25.40 29.46 5.670 2.598 8.97E+05 0.557
3.443 23.62 29.41 5.538 2.655 9.27E+05 0.555
3.482 22.11 29.28 5.422 2.700 9.53E+05 0.553
3.521 20.92 29.19 5.331 2.738 9.77E+05 0.552
3.562 19.96 29.21 5.260 2.777 1.00E+06 0.551
3.603 19.21 29.27 5.207 2.811 1.03E+06 0.551
3.646 18.43 29.56 5.161 2.864 1.06E+06 0.553
3.689 17.78 29.87 5.126 2.914 1.09E+06 0.554
3.733 16.99 30.28 5.085 2.977 1.13E+06 0.557
3.779 16.27 30.75 5.053 3.043 1. 17E+06 0.560
3.826 15.53 31.39 5.028 3.122 1.21E+06 0.564
3.873 14.70 32.13 5.002 3.212 1.26E+06 0.568
3.922 13.90 33.06 4.988 3.314 1.32E+06 0.574
3.973 12.98 34.16 4.976 3.432 1.38E+06 0.581
4.024 11.94 35.66 4.977 3.582 1.46E+06 0.590
4.077 10.53 37.62 4.980 3.777 1.56E+06 0.602
4.132 8.197 39.98 4.950 4.038 1.69E+06 0.617
4.159 6.554 41.28 4.917 4.198 1.77E+06 0.626
4.188 4.516 42.70 4.871 4.383 1.86E+06 0.637
4.216 1.598 43.65 4.758 4.587 1.96E+06 0.649
4.245 -1.620 44.32 4.622 4.794 2.06E+06 0.661
4.274 -5.336 44.12 4.422 4.989 2. 16E+06 0.674
4.304 -9.157 42.82 4.161 5.145 2.24E+06 0.687
4.334 -12.51 40.10 3.840 5.221 2.29E+06 0.697
4.364 -14.73 37.29 3.561 5.236 2.32E+06 0.705
4.395 -16.26 34.42 3.302 5.212 2.32E+06 0.711
4.427 -17.11 31.57 3.066 5.149 2.3IE+06 0.715
4.459 -17.55 28.79 2.843 5.063 2.29E+06 0.719
4.491 -17.65 26.38 2.654 4.969 2.26E+06 0.721
4.524 -17.35 24.24 2.496 4.856 2.23E+06 0.721
4.557 -16.93 22.08 2.334 4.731 2. 19E+06 0.721
4.591 -16.28 20.37 2.213 4.602 2. 14E+06 0.719
4.625 -15.64 19.02 2.119 4.487 2.1OE+06 0.716
4.66 -14.92 17.79 2.037 4.367 2.06E+06 0.712
4.695 -14.24 16.73 1.966 4.255 2.03E+06 0.708
4.731 -13.66 15.97 1.918 4.164 2.00E+06 0.703
4.767 -13.01 15.14 1.864 4.060 1.96E+06 0.698
4.804 -12.39 14.45 1.823 3.964 1.93E+06 0.692
4.842 -11.85 13.86 1.787 3.879 1.90E+06 0.687
4.88 -11.49 13.41 1.756 3.818 1.89E+06 0.683
4.919 -10.84 12.96 1.740 3.724 1.86E+06 0.674
4.958 -10.44 12.52 1.712 3.657 1.84E+06 0.670
4.998 -10.10 12.10 1.683 3.596 1.82E+06 0.666
5.039 -9.750 11.84 1.672 3.542 1.8IE+06 0.660
5.08 -9.418 11.62 1.664 3.491 1.80E+06 0.655
5.122 -9.123 11.43 1.659 3.446 1.79E+06 0.650
5.165 -8.868 11.23 1.649 3.404 1.78E+06 0.645
A9 CARBON-INCORPORATED ALLOYS
(Si 1_xC.., SI 1-x-pexC..., etc.)

The group-IV alloy semiconductors, including C, Si, Ge, and Sn, have been actively
investigated for use in heterojunction devices compatible with Si circuit technology
[1,2]. For a variety of technical reasons, in particular to adjust the strain in the het-
eroepitaxial layers, it is desirable to adjust the stain in the group-IV materials and
form alloys (e.g., Sil_xC x and Sil_x_yGexCy)' For the Si-Ge system, the bond-length
mismatch is only 4%, whereas it is about 40% for the Si-C system. Due to the small
covalent radius of the C atom, the incorporation of C in substitutional sites can lead
to the strain relaxation of compressively strained Si-Ge alloy. According to
Vegard's law, the lattice-matching condition for Sil_x_yGexCy on Si is x=8.2y (Si l_
9.2yGeS•2yCy) [2]. It must be noted, however, that the solid solubilities of C in these
constituents are extremely low (-3xlO ls cm- 3 for Si and _5xlO ls cm-3 for Ge at the
melting points [3]). Growth under nonequilibrium conditions at relatively low
growth temperatures enables us to obtain alloys with significant C fractions. Indeed,
Sil_xCx alloys with C fractions as high as x-0.2 have been prepared by MBE, and Si l_
x_yGexCy alloys with y~O.1 have been achieved by CVD (see Ref. [4]).

Theoretical investigation on the electronic energy-band structure of random Si-C
alloy has been carried out by several authors [5-7]. The results indicate that substi-
tutional C in Si tends to decrease the band-gap energies rather than enlarge them (as
would be expected from a simple virtual-crystal picture).
Experimentally, a blue shift of the band-gap energy has been observed in layers of
Sil_x_yGeXCy [8,9]. However, the increase in the band-gap energy was only about half
of that which would be obtained by reducing the Ge content to achieve similar strain
reduction [9]. Therefore, it was concluded [9] that it appears possible to create de-
fect-free films without strain on Si with a band gap substantially less than that of Si
(i.e., initial C incorporation in relaxed Sil_x.yGexCy will decrease the band-gap en-
ergy). Brunner et al. [10] also observed that the PL red shift in Sil_xCx layers is about
30% larger than the expected band-gap reduction induced by strain. This is in quali-
tative agreement with the PL blue shift observed in Sil_x_yGexCy layers [9] and might
indicate the reduction in the band-gap energy due to C incorporation. Using an em-
113
pirical interpolation scheme, Soref [2] also obtained a red shift of the band-gap en-
ergy in relaxed Sil.x.yGexCy alloy with yS11 %. We reproduce in Fig. A9-1 his ob-
tained result, together with the constant lattice-constant contours of this alloy system
[2]. In the case of Ge, substitutional C decreased the lattice constant but increased
the band-gap energy ([4], see Fig. A9-3 below). These are known simply to be due
to the bulk alloy effect. We can, thus, conclude that the substitutional C plays a dif-
ferent role between in Si and Ge.
Kissinger et al. [11,12] reported SE and ER results on the Eo', E 1, and E2 CP ener-
gies in strained Sil.xCx layers grown pseudomorphically on Si(100) by MBE. The Eo'
and E2 gaps decreased with increasing C content x (x<O.02), while the EI gap in-
creased in energy, as depicted in Fig. A9-2 [12]. Zollner et al. [13] obtained the es-
sentially same results as those measured by Kissinger et al. [11 ,12]. Note that the CP
energies in heteroepitaxial alloy film are dependent not only on its alloy composi-
tion, but also on the strength of built-in strain present in such heteroepitaxial film.
Therefore, Zollner [14] have performed theoretical calculation using established
deformation-potential theory and found that the experimental shift of the EI gap has
the expected sign and magnitude, but the lack of similar shifts of the Eo' and E2 gaps
is puzzling and needs further study.
Recently, Lee et al. [15] have used SE to study optical properties of heteroepi-
taxial Sil.xCx and Sio.924.xGeo.076C. layers grown on Si(lOO) (see Fig. A9-4 below). The
EI gap in Sil.xCx is found to decrease at x=O.7% and increase at 1.4%, in contrast
with the monotonous increase of the ER data by Kissinger et al. (Fig. A9-2). Thus,
there is some ambiguity about the CP energies in Sil.xCx alloy.
1 3 0 0 . . - - - - - - - - -n
Si (b)
1200
silicon gap
>:
! 1100
Co
I'll
.g
c:
1000
,
1l \
900
Ge 800~~~~~~~~~~
o 2 4 6 8 10 12
carbon content, y (percent)
Figure A9-1 (a) Lattice parameter of Sil.x.yGexCr Altitude is a lattice parameter in nm. (b)
Band gap of unstrained Sil .•.yGe,Cr Altitude is band gap in e V. (From Soref [2].)
A9 CARBON-INCORPORATED ALLOYS (Sil.xC.. Sil ...,GexC" etc.) 115
4.3 -t-'-............--'-'-.............._ ............_'-'--+

._._._._ Ea(X) (ER)
4.25
__ _ -.-.--0-_._.
- - - . - ----0::"'"
-••• -:w
Ea (SE)
4.2
I
>- E, (ER) •
j 3.45~.--____------.---~----~------~
Figure A9-2 CP energies
-
3.4 E (SE)
1 ........... .. obtained by SE (T=300 K)
........... ••• a_ ••••••••• -
and ER (T=80 K) for strained
3.35 Sil.xCx layer. (From Kissinger
'-__ E' (ER) et al. [12]).
----~--:.-- -.---..J.
3.3~~~~~~~~~~~.~~~~
o 0.2 0.4 0.6 0.8 1.0 1.2

Carbon fraction (at%)

Optical absorption spectra at the fundamental absorption edge have been measured
by Kolodzey et al. [4] for Gel."C" and by Orner et al. [16,17] for some (Si,Ge,Sn,C)
and Sil.".)/Ge"C)/ systems. Figure A9-3 shows, as an example, the absorption spectra
.
of'1000
~
E
.8-
c:
0
100
x=O.01 (
1.::/
(X=O.02 fx=o.03 .
....
0.
0 10
II)
.0
«
«i
()
~
0.
0 0.1
~,,~I Figure A9-3 Optical absorpti-
on coefficient a for Sil ..Cx with
x=0.01,0.02, and 0.03 at 300 K
compared with that of bulk Ge.
(From Kolodzey et al. [4].)
550 600 650 700 750 800 850 900 950

Photon Energy (meV)
for Gel_xCx as measured by Kolodzey et al. [4]. The a(E) data reported by Orner et al.
[16] for (Si,Ge,Sn,C) and Sil_x_pexCy alloys were in the lO-lOs-cm-1 range.
The pseudodielectric-function spectra of C-incorporated alloys were reported by
Kissinger et al. [11], Lee et al. [15], Krishnamurthy et al. [18], Orner et al. [19],
Junge et al. [20], and Yang et al. [21]. We reproduce in Fig. A9-4 the results ob-
tained by Lee et al. [15]. The corresponding derivative spectra d2e/dE showed that
for Sio.924_xGeo.o76CjSi the EI gap increases and the E2 gap decreases as C compensa-
tion increases. The EI CP amplitude was also found to be the largest for the lattice-
matched x=0.9% sample due to strain compensation.
40
(b) SiO.924-xGeO.076Cx 0.9 %
30
e20
~ 60 0%
V (al Si C
t· • •
1.4%
C 40 0%
.2
....,•
U 30
c 0.7% .g
:s ti
u. 20
0
0
'90
"2
'C £.
10
l! '"•
i
0
E 1f-10
-10 •
GI
en
0.. -20 -20
1.6 2 2.6 3 3.6 4
Energy (eV) 1.5 2 2.5 3 3.5 4 4.5 5
Photon Energy (eV)
Figure A9-4 SE (£\> £2) spectra for (a) Sil_xC. and (b) Sio.924-.GeO.076C. alloys measured at 300
K. (From Lee et al. [15].)
REFERENCES
1. R. A. Soref, Proc. IEEE 81,1687 (1993).
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A9 CARBON-INCORPORATED ALLOYS (Sil_.C.. Sil_._yGe.Cy, etc.) 117
8. P. Boucaud, C. Francis, F. H. Julien, J.-M. Lourtioz, D. Bouchier, S. Bodnar, B.

Lambert, and J. L. Regolini, Appl. Phys. Lett. 64, 875 (1994).
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B
111-V BINARY SEMICONDUCTORS
B1 CUBIC BORON NITRIDE

(c-BN)
BI.I GENERAL REMARKS

Cubic BN (c-BN) is a compound crystallizing in the zinc-blende structure. It is the
lightest among the III-V family. It possesses many unique physical properties like
extreme hardness, high melting point, high thermal conductivity, large band-gap
energy, low dielectric constant, and high chemical stability. If the problems of crys-
tal growth are solved, it will become an important material for many industrial ap-
plications.
B1.2 ELECTRONIC ENERGY-BAND STRUCTURE

The electronic energy-band structure of c-BN has been studied theoretically by
many authors [1-8] (see also references cited in Ref. [4]). Comparison with experi-
120 III-V BINARY SEMICONDUCTORS
ment is difficult because of the lack of detailed experimental data. A plane-wave-

Gaussian mixed-basis method [3] yielded the lowest direct gap at X. Some calcula-
tions [1,7] indicated the r 1 (s-like) conduction band as the lowest conduction state at
r. The majority of the theoretical calculations, however, report the lowest r con-
duction state as being r lS (p like) and the lowest direct gap at this point (rlS~rlS' 8-
15 eV) [2-6,8]. Figure Bl-l shows the electronic energy-band structure of c-BN as
calculated by Wentzcovitch et al. [4] within the total-energy pseudopotential method
employing a local-density approximation.
c-BN is an indirect-band-gap semiconductor. The theoretical studies [1-8] indicat-
ed the lowest conduction state being at X, although some earlier works resulted at L
or 11 minimum (see Ref. [4]). The lowest-indirect-gap energy obtained theoretically
was in the range 4.2-11 eV (EgX, rlS~Xl)' while the experimental value was -6 eV
(see Refs. [4,8]).
The optical constants in the UV region of c-BN obtained from reflectance and
18.0 r----""T----:rroo::;;::-.------.
12.0
6.0
~ 0.0
~
c:
~-6.0
w
-12.0 c-BN
-18.0
-24.0 tL:-~A;::-lr~-A~-+.--;-)=---:::---='
X U,K E r
Figure BI·I Electronic energy-band structure of c-BN as calculated within the total-energy
pseudopotential method employing a local-density approximation. (From Wentzcovitch et
at. [4].)
B 1 CUBIC BORON NITRIDE (c-BN) 121
transmittance measurements [9] suggest the presence of CPs at -9.5, 11.5, 13.5, and
17 eV. The fundamental absorption edge was also determined to occur at 6.1±o.2 eV
[9].
Bl.3 OPTICAL CONSTANTS

Optical properties in the reststrahlen region of c-BN have been studied by Gielisse et
at. [10]. The single crystals used in this study were grown at very high pressures and
temperatures from a catalyzed hexagonal BN system. The data analysis yielded the
reststrahlen parameters of co TO=1065 cm- I , t,=7.1, and t_=4.5. More recently, Ere-
mets et at. [11] have obtained the reststrahlen parameters of coTO=1055.7 em-I,
t.=6.80, and t_=4046. They used the single crystals of c-BN prepared from the sys-
tem BNh..-LiH. The damping parameter of r=0.005 (divided by co ro) was found to
give a satisfactory fit. This value is considerably smaller than that of Gielisse et at.
(r=0.038) [10]. Note that the r value influences only the values of nand k at the
maxima. Gielisse et al. [10] also reported the n dispersion in the visible region of c-
BN (see also Ref. [11]).
Optical absorption in the IR-UV region of c-BN has b,een studied by Chrenko
[12]. He obtained a minimum value for the band gap of 604±o.5 eV. He also ob-
served multiphonon absorption bands that are significantly different from those re-
ported by Gielisse et at. [10]. Onodera et at. [13] have studied the optical absorption
edge of c-BN at high pressures up to 1.8 GPa using a sapphire anvil cell. The indi-
rect energy gap and its pressure coefficient were determined to be 6.27±o.02 eV and
6.0±004 meV/GPa, respectively.
The transmittance and reflectance data of c-BN in the UV region was reported by
Miyata et at. [9]. They used large single crystals synthesized by applying the tem-
perature-difference method with LiCaBN2 as a solvent at 5.5 GPa and 1800°C. Thin
films of c-BN have also been characterized by means of SE [14-17], IR spectros-
copy [18], polarized-IR spectroscopy [19], and reflectance-absorption spectroscopy
[20].
The room-temperature values of (tl' ~), (n, k), a, and R listed in Table Bl-1 were
taken from Eremets et at. [11] for £:::;3.5 eV and from Miyata et at. [9] for the inter-
band transition region (4:::;£:::;20 eV).
The (tl' ~), (n, k), a, and R values in Table B1-1 are graphed in Figs. Bl-2-Bl-5,
respectively.
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2. A. Zunger and A. J. Freeman, Phys. Rev. B 17,2030 (1978).
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(1993).
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Woollam, J. Hahn, and F. Richter, J. Appl. Phys. 82, 2906 (1997).
18. P. B. Mirkarimi, D. L. Medlin, K. F. McCarty, and J. C. Barbour, Appl. Phys.
Lett. 66, 2813 (1995).
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(1996).
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Status Solidi A 158,281 (1996).
B 1 CUBIC BORON NITRIDE (c-BN) 123
o
Photon energy (eV)
Figure 81·2 £,(E) and ~(E) spectra for c-BN at 300 K.
o 4
Photon energy (eV)
Figure 81·3 neE) and k(E) spectra for c-BN at 300 K.
c-BN
1~10_2 10-1 100 10 1 102

Photon energy (eV)
Figure BI-4 ~E) spectrum for c-BN at 300 K.
0.25
c-BN
a:
0.20
0.15
o 4 8 12 16 20
Photon energy (eV)
Figure BI-S R(E) spectrum for c-BN at 300 K.
Bl CUBIC BORON NITRIDE (c-BN) 125
Table Bl-l Optical constants of c-BN at 300 K.

eV £1 £2 n k a (cm· 1) R
0.01 6.833 0.0013 2.614 0.00025 0.199
0.02 6.937 0.0028 2.634 0.00053 0.202
0.03 7.131 0.0052 2.670 0.0010 0.207
0.04 7.462 0.0091 2.732 0.0017 0.215
0.05 8.030 0.016 2.834 0.0028 0.229
0.06 9.105 0.032 3.017 0.0054 0.252
0,07 11.67 0.091 3.416 0.013 0.299
0.072 12.66 0.121 3.558 0.017 1.25E+02 0.315
0.074 14.00 0.169 3.742 0.023 1.70E+02 0.334
0.076 15.94 0.251 3.992 0.031 2.43E+02 0.359
0,078 18.95 0.411 4.354 0.047 3.74E+02 0.392
0.08 24.30 0.791 4.930 0.080 6.51E+02 0.439
0.081 28.89 1.216 5.376 0.113 9.28E+02 0.471
0.082 36.34 2.100 6.031 0.174 1.45E+03 0.512
0.083 50.51 4.458 7.114 0.313 2.64E+03 0.568
0.084 87.41 14.97 9.383 0.798 6.79E+03 0.654
0.0842 103.0 21.46 10.20 1.052 8.98E+03 0.678
0.0846 158.2 57.10 12.78 2.235 1.92E+04 0.738
0.085 233.6 284.3 17.34 8.196 7.06E+04 0.828
0.0854 -228.4 217.2 6.587 16.48 1.43E+05 0.920
0.0858 -137.1 48.14 2.025 11.88 1.03E+05 0.946
0.0862 -87.84 19.22 1.019 9.428 8.24E+04 0.956
0.0866 -63.19 10.17 0.637 7.975 7.00E+04 0.962
0.087 -48.72 6.259 0.447 6.994 6. 17E+04 0.965
0.0874 -39.27 4.232 0.337 6.275 5.56E+04 0.967
0.0878 -32.62 3.050 0.267 5.718 5.09E+04 0.969
0.0882 -27.70 2.301 0.218 5.268 4.71E+04 0.970
0.0886 -23.92 1.797 0.184 4.894 4.40E+04 0.971
0.089 -20.91 1.442 0.158 4.576 4. 13E+04 0.972
0.09 -15.57 0.908 0.115 3.947 3.60E+04 0.973
0.092 -9.556 0.454 0.073 3.092 2.88E+04 0.973
0.094 -6.264 0.271 0.054 2.503 2.39E+04 0.971
0.096 -4.189 0.180 0.044 2.047 1.99E+04 0.967
0.098 -2.762 0.128 0.039 1.662 1.65E+04 0.960
0.1 -1.721 0.096 0.037 1.312 1.33E+04 0.948
0.104 -0.305 0.059 0.053 0.555 5.85E+03 0.849
0.108 0.611 0.040 0.782 0.026 2.8IE+02 0.015
0.112 1.251 0.029 1.119 0.013 1.47E+02 0.003
0.116 1.723 0.022 1.313 0.0083 9.77E+01 0.Q18
0.12 2.085 0.017 1.444 0.0059 7. 16E+01 0.033
0.13 2.700 0.010 1.643 0.0031 4.05E+01 0.059
0.14 3.085 0.0066 1.756 0.0019 2.67E+Ol 0,075
0.15 3.347 1.829 0.086
0.2 3.942 1.985 0.109
0.25 4.153 2.038 0.117
0.3 4.255 2.063 0.120
0.35 4.313 2.077 0.122
0.4 4.349 2.085 0.124
0.45 4.373 2.091 0.125
0.5 4.390 2.095 0.125
Table BI·I Continued (c-HN).

eV £1 £2 n k a (cm· 1) R
0.55 4.403 2.098 0.126
0.6 4.412 2.100 0.126
1 4.432 2.105 0.127
1.5 4.488 2.118 0.129
2 4.530 2.128 0.130
2.5 4.583 2.141 0.132
3 4.650 2.156 0.134
3.5 4.724 2.173 0.137
4 4.366 2.089 0.124
4.5 4.454 2.111 0.127
5 4.553 2.134 0.131
5.5 4.767 2.183 0.138
6 5.110 0.096 2.261 0.021 1.29E-t04 0.150
6.5 5.233 0.678 2.292 0.148 9.75E+04 0.156
7 5.094 0.852 2.265 0.188 1.33E+05 0.153
7.5 5.065 0.965 2.261 0.213 1.62E+05 0.153
8 5.105 1.046 2.271 0.230 1.87E+05 0.155
8.5 5.239 1.168 2.303 0.254 2.18E+05 0.161
9 5.333 1.377 2.328 0.296 2.70E+05 0.166
9.5 5.437 1.644 2.358 0.349 3.36E+05 0.172
10 5.605 1.824 2.398 0.380 3.86E+05 0.180
10.5 6.074 2.607 2.518 0.518 5.51E+05 0.203
11 5.557 3.484 2.461 0.708 7.89E+05 0.211
11.5 4.926 4.105 2.381 0.862 1.00E+06 0.218
12 4.332 3.732 2.242 0.832 1.01E+06 0.199
12.5 4.323 4.012 2.261 0.887 1.12E+06 0.208
13 3.916 4.498 2.223 1.012 1.33E+06 0.221
13.5 3.247 4.660 2.113 1.103 1.51E+06 0.225
14 2.594 4.615 1.986 1.162 1.65E+06 0.226
14.5 2.068 4.242 1.842 1.151 1.69E+06 0.216
15 1.845 3.890 1.754 1.109 1.69E+06 0.204
15.5 1.786 3.659 1.711 1.069 1.68E+06 0.194
16 1.732 3.585 1.690 1.061 1.72E+06 0.191
16.5 1.474 3.822 1.669 1.145 1.92E+06 0.209
17 1.012 3.701 1.557 1.188 2.05E+06 0.217
17.5 0.681 3.428 1.445 1.186 2.lOE+06 0.217
18 0.453 3.171 1.352 1.173 2. 14E+06 0.217
18.5 0.286 2.914 1.268 1.149 2. 16E+06 0.215
19 0.120 2.578 1.162 1.109 2. 14E+06 0.213
19.5 0.041 2.299 1.082 1.063 2.lOE+06 0.208
20 -0.042 2.014 0.993 1.014 2.06E+06 0.206
B2 HEXAGONAL BORON NITRIDE
(h-BN)
B2.1 GENERAL REMARKS

Boron nitride (BN) exists in three crystalline forms. The hexagonal form (h-BN) is
the normal phase stable at room temperature and pressure [1]. It is isostructural with
graphite. At high temperature and pressure, h-BN (space group=P6immc) may
transform into a wurtzite structure (P63mc).
B2.2 ELECTRONIC ENERGY·BAND STRUCTURE

The electronic structure of h-BN shares many similarities with graphite, although
due to its ionicity and inequivalence of the lattice sites, h-BN is a wide-band-gap
semiconductor, whereas graphite is a semimetal. There have been many studies on
the electronic and structural properties of h-BN (see Ref. [2]). We depict in Fig. B2-
1 the electronic energy-band structure of h-BN as calculated with an orthogonalized-
LCAO method by Xu and Ching [2]. This calculated result shows an indirect gap of
4.07 eV ( H~M) and direct gaps of 4.2 eV (M), 4.5 eV (K), 4.6 eV (M), 5.6 eV (L),
8.9 eV ( n, and 10.5 eV (A). Previous measurements [3-6] report a fundamental
absorption gap of -5-6 eV. The band-structure calculations have reported values of
2.45 to 12.7 eV with most reporting direct gaps (see Ref. [7]), but Ref. [8] reporting
an indirect band gap of 3.9 eV (and a direct gap of 4.3 eV). Thus, there is some am-
biguity about the electronic energy-band structure of h-BN.
Figure B2-1 Electronic energy-band

structure of h-BN as calculated with an
orthogonalized-LCAO method. (From
Xu and Ching [2].)
KH Ar ML A
WAVE VECTOR
127
B2.3 OPTICAL CONSTANTS

h-BN has a layered structure and is uniaxial with the c axis being the optical axis. IR
optical properties of h-BN have been studied by Geick et al. [9] in the range from
100 to 3000 cm- I. The data were analyzed by means of the KK transformation and a
classical oscillator fit. The dielectric constants determined from this work were
£,=7.04 and £~=4.95 for E.lc and £,=5.09 and £~=4.10 for E I c. They determined
independently the value of £, at a frequency of I MHz by capacitance measurements.
The obtained results were £,=6.85 for E.lc and £,=5.06 for E II c, in agreement with
those deduced from the IR data.
Optical properties of h-BN in the sub millimeter (-20-120 cm-I) region has been
studied by Gatesman et at. [10]. The materials studied were not single crystals, but
highly oriented polycrystalline materials. These data gave the static dielectric con-
stants of £,=4.0-4.7 for E.lc and 3.6-4.2 for E I c, depending on a grade of the ma-
terials studied. The low absorption (n<1 cm- I) was also observed for a sample of a
certain grade at frequencies below 38 cm- I.
Theoretically, there should be only one reststrahlen band for each direction of
polarization. Geick et al. [9], however, found two active modes for both polariza-
tions, a strong one and a weak one (w TO\=783 cm- I and wT02=1510 cm-I for E.lc;
wTO\=1367 cm-I and WT02=767 cm- I for E II c). The weak modes were considered to
be due to the effect of misorientation in the polycrystalline sample they studied.
Optical absorption coefficients at the fundamental absorption edge of h-BN have
been measured by several authors [4,11,12]. The measured values are in reasonable
agreement with each other (see Ref. [12]).
UV optical properties of h-BN have been studied using an electron-energy-Ioss
spectroscopy with momentum transfer both in and out of the x-y plane by BUchner
[3] and Tarrio and Schnatterly [7]. The crystals used by these authors were peeled
off from bulk materials with adhesive tapes. The £(E) spectra determined are in
qualitatively good agreement between these two studies. The energy-loss function
1m (_£-1) for E II c showed three collective oscillations at 7.7, 11.7, and 23 e V, while
the interband transition spectrum for E.lc was similar to that for E I c, except that
an additional transition appeared at 9.9 eV and the oscillator strengths were some-
what reduced [7]. Thin films of h-BN have also been characterized recently by
means of SE [13-15] and reflectance-absorption spectroscopy [16].
Tables B2-1 and B2-2 list the room-temperature values of £=£I+iEz, n*=n+ik, n,
and R for h-BN for E.lc and E I c, respectively. A set of the optical constants for
E$I.0 e V were calculated using the reststrahlen parameters given by Geick et al. [9],
and those for E2:4.0 eV were taken from Tarrio and Schmatterly [7].
The (£1' Ez), (n, k), n, and R values in Tables B2-1 and B2-2 are plotted in Figs.
B2-2-B2-5, respectively. The solid and dashed lines represent the data for E.lc and
E II c, respectively.
B HEXAGONAL BORON NITRIDE (h-BN) 129
REFERENCES
1. R. S. Pease. Acta Crystallogr. 5.536 (1952).
2. Y.-N. Xu and W. Y. Ching. Phys. Rev. B 44.7787 (1991).
3. U. BUchner. Phys. Status Solidi B 81. 227 (1977).
4. M. J. Rand and J. F. Roberts. 1. Electrochem. Soc.llS. 423 (1968).
5. W. Baronian. Mater. Res. Bull. 7.119 (1972).
6. M. R. Vilanove. C. R. Acad. Sci. Ser. B 271.1101 (1971).
7. C. Tarrio and S. E. Schnatterly. Phys. Rev. B 40. 7852 (1989).
8. A. Catellani. M. Postemak. A. Baldereschi. and A. J. Freeman. Phys. Rev. B 36.
6105 (1987).
9. R. Geick. C. H. Perry. and G. Rupprecht. Phys. Rev. 146. 543 (1966).
10. A. J. Gatesman. R. H. Giles. and J. Waldman. 1. Appl. Phys. 73. 3962 (1993).
11. A. J. Noreika and M. H. Francombe. 1. Vac. Sci. Technol. 6. 722 (1969).
12. A. Zunger and A. Katzir. Phys. Rev. B 13.5560 (1976).
13. E. Franke. H. Neumann. M. Schubert. T. E. Tiwald, J. A. Woollam, and J.
Hahn. Appl. Phys. Lett. 70,1668 (1997).
14. M. Schubert. B. Rheinlander, J. Hahn, M. ROder. and F. Richter. Appl. Phys.
Lett. 70. 1819 (1997).
15. E. Franke. M. Schubert. H. Neumann, T. E. Tiwald. D. W. Thompson. J. A.
Woollam. J. Hahn, and F. Richter. 1. Appl. Phys. 82. 2906 (1997).
16. O. Stenzel. J. Hahn. M. ROder, A. Ehrlich, S. Prause. and F. Richter, Phys.
Status Solidi A 158.281 (1996).
25r-II-.nn.----.--~~
20
15 h-BN
.... 10
'" 5
o
-5~~~~~~~
30r-
25
20 -Elc
-----EI/c
: 15
10
5
%~~5~7~9~--~2~0~~4~0~
Photon energy (eV)
Figure B2-2 £.(E) and Ez(E) spectra for h-BN at 300 K.
5
4
3
c
2
1
g
-Elc
3 -----Ellc
.::t:.
2
1
°3 5 7 9 20 40
Photon energy (eV)
Figure B2·3 n(E) and k(E) spectra for h-BN at 300 K.
107
h-BN
106
105
I" 104
-
E
()
103 Elc
~ Ellc
102
10 1
10°
10-1
10-2 10-1 100 10 1
Photon energy (eV)
Figure B2·4 OO,E) spectrum for h-BN at 300 K.
h-BN
0.5 -Elc
•.... Ell c
0.4 '.
.",\
,,,'..
a: '." , ,," ,,
0.3 ... . , ,,, ,,,
... ..
,, ,
, , ,, ,
,,,
0.2 ,
,,
,
.'
,,
,,
,
0.1
03 5 7 9 20
Photon energy (eV)
Figure B2-5 R(E) spectrum for h-BN at 300 K
Table B2·1 Optical constants of h·BN for E.L c at 300 K.

eV R
0.01 7.036 0.0034 2.652 0.00064 6.46E-01 0.205
0.02 7.063 0.0070 2.658 0.0013 2.67E+00 0.205
0.03 7.110 0.011 2.666 0.0021 6.38E+00 0.207
0.04 7.182 0.016 2.680 0.0031 1.24E+01 0.208
0.05 7.284 0.024 2.699 0.0044 2.22E+01 0.211
0.06 7.432 0.035 2.726 0.0064 3.90E+01 0.215
0.Q7 7.656 0.057 2.767 0.010 7.33E+01 0.220
0.075 7.821 0.079 2.797 0.014 1.08E+02 0.224
0.08 8.057 0.124 2.839 0.022 1.77E+02 0.229
0.085 8.446 0.239 2.906 0.041 3.54E+02 0.238
0.09 9.268 0.755 3.047 0.124 1.13E+03 0.257
0.0925 9.925 1.972 3.166 0.311 2.92E+03 0.274
0.095 7.820 4.628 2.907 0.796 7.66E+03 0.269
0.0975 5.519 2.060 2.388 0.431 4.26E+03 0.181
0.1 6.182 0.791 2.491 0.159 1.6lE+03 0.184
0.1025 6.715 0.417 2.593 0.080 8.35E+02 0.197
0.105 7.077 0.272 2.661 0.051 5.44E+02 0.206
0.11 7.574 0.171 2.752 0.031 3.46E+02 0.218
0.115 7.965 0.145 2.822 0.026 3.00E+02 0.227
0.12 8.344 0.147 2.889 0.025 3.09E+02 0.236
0.13 9.244 0.197 3.041 0.032 4.26E+02 0.255
0.14 10.64 0.334 3.262 0.051 7.27E+02 0.282
0.15 13.38 0.751 3.659 0.103 1.56E+03 0.326
0.16 21.51 3.088 4.650 0.332 5.39E+03 0.419
0.164 31.58 8.694 5.672 0.766 1.27E+04 0.497
Table B2·1 Continued (h-BN, EJ.c).

eV £1 £2 n k a (em-I) R
0.165 35.99 12.44 6.086 1.022 1.71E+04 0.525
0.166 41.51 18.97 6.601 1.437 2.42E+04 0-559
0.167 47.41 3L13 7.216 2.157 3.65E+04 0.600
0.168 48.22 53.91 7.763 3.472 5.91E+04 0.651
0.169 25_25 83.27 7.492 5.557 9-52E+04 0.709
0.17 -20.04 80.00 5.587 7.159 1.23E+05 0.764
0.171 -38.30 49.94 3.510 7_115 1.23E+05 0.802
0.172 -36.03 28.92 2.255 6.412 1.12E+05 0.826
0.173 -30.04 17.80 1.562 5.699 1.00E+05 0.840
0.174 -24.67 11.79 1.156 5.099 9.00E+04 0.849
0.175 -20.41 8.303 0.901 4.607 8. 17E+04 0.855
0.176 -17.09 6.131 0.730 4.197 7.49E+04 0.858
0.177 -14.47 4.699 0.610 3.852 6.9IE+04 0.860
0.178 -12.36 3.710 0-522 3.555 6.41E+04 0.860
0.179 -10.65 3.000 0.455 3.295 5.98E+04 0.860
0.18 -9.228 2.474 0.404 3.064 5.59E+04 0.858
0.184 -5.376 1.320 0.283 2.336 4.36E+04 0.841
0.188 -3.121 0.817 0.229 1.781 3.40E+04 0.804
0.192 -1.647 0.555 0.213 1.301 2-53E+04 0.730
0.196 -0.610 0.401 0.245 0.818 1.63E+04 0.559
0.2 0.159 0.303 0-501 0.303 6. 13E+03 0.146
0.204 0.751 0.237 0.877 0.135 2.79E+03 0.0094
0.208 1.220 0.190 1.108 0.086 1.81E+03 0.0043
0.212 1.602 0.156 1.267 0.062 1.32E+03 0.015
0.216 1.918 0.130 1.386 0.047 1.03E+03 0.027
0.22 2.183 0.110 1.478 0.037 8.33E+02 0.037
0.24 3.057 0.056 1.748 0.016 3.91E+02 0.074
0.26 3-540 0.034 1.881 0.0090 2.36E+02 0.094
0.28 3.844 0.022 1.961 0.0057 1.62E+02 0.105
0.3 4.052 0.016 2.013 0.0039 L19E+02 0.113
0.35 4.362 0.0079 2.088 0.0019 6.70E+01 0.124
0.4 4.529 0.0046 2.128 0.0011 4.40E+01 0.130
0.5 4.700 0_0020 2.168 0.00047 2.38E+01 0.136
0.6 4.783 0.0011 2.187 0.00025 1.52E+01 0.139
0.7 4.830 0_00066 2.198 0.00015 1.06E+01 0.140
0.8 4.859 0.00043 2.204 0.00010 7.89E+00 0.141
0.9 4.879 0_00030 2.209 0_000067 6. llE+OO 0.142
1 4.893 0.00021 2.212 0.000048 4.87E+00 0.142
4 6-592 0.242 2.568 0.047 1.91E+04 0.193
4.2 6.780 0-269 2.604 0.052 2.20E+04 0.198
4.4 7.211 0.296 2.686 0.055 2.46E+04 0.209
4.6 7.587 0.511 2.756 0.093 4.33E+04 0.219
4.8 8.152 0.592 2.857 0.104 5.04E+04 0.232
5 8.879 0.834 2.983 0.140 7.09E+04 0.249
5.2 10.01 1.049 3.168 0.166 8.73E+04 0.272
5.4 11.49 1.668 3.398 0.245 1.34E+05 0.300
5.6 11.57 2.960 3.429 0.432 2.45E+05 0.307
5.8 18.51 7.426 4.385 . 0.847 4.98E+05 0.410
5.9 21.79 13.61 4.873 1.397 8.36E+05 0.465
6 16.30 26.34 4.862 2_709 1.65E+06 0.534
Table 82-1 Continued (h-BN, E.Lc).

eV £1 £2 n k a (cm· 1) R
6.1 1.049 26.83 3.735 3.591 2.22E+06 0.577
6.2 -4.870 18.30 2.652 3.450 2. 17E+06 0.580
6.3 -4.924 12.78 2.094 3.051 1.95E+06 0.556
6.4 -4.036 9.659 1.793 2.693 1.75E+06 0.524
6.6 -1.614 7.076 1.680 2.106 1.41E+06 0.422
6.8 -0.996 6.969 1.738 2.004 1.38E+06 0.396
7 -1.614 6.430 1.584 2.030 1.44E+06 0.413
7.2 -2.072 5.220 1.331 1.961 1.43E+06 0.426
7.4 -1.910 4.009 1.125 1.782 1.34E+06 0.415
7.6 -1.399 2.960 0.968 1.529 1.18E+06 0.376
7.8 -0.861 2.475 0.938 1.319 1.04E+06 0.317
8 -0.404 2.126 0.938 1.133 9. 19E+05 0.255
8.4 0.323 1.695 1.012 0.837 7. 13E+05 0.148
8.8 0.834 1.480 1.125 0.658 5.87E+05 0.091
9.2 1.291 1.345 1.256 0.535 4.99E+05 0.066
9.6 1.614 1.318 1.360 0.485 4.72E+05 0.063
10 1.883 1.318 1.446 0.456 4.62E+05 0.066
10.5 2.179 1.318 1.537 0.429 4.56E+05 0.071
11 2.664 1.372 1.682 0.408 4.55E+05 0.086
11.5 2.987 1.641 1.788 0.459 5.35E+05 0.104
12 3.417 1.964 1.918 0.512 6.23E+05 0.126
12.5 3.498 2.664 1.987 0.670 8.50E+05 0.152
13 3.498 3.202 2.030 0.789 1.04E+06 0.172
13.5 3.552 3.767 2.089 0.902 1.23E+06 0.193
14 3.567 4.721 2.178 1.084 1.54E+06 0.227
14.5 2.964 6.295 2.227 1.413 2.08E+06 0.282
15 -0.525 5.770 1.623 1.777 2.70E+06 0.353
16 -1.521 3.672 1.108 1.658 2.69E+06 0.384
17 -1.311 2.308 0.820 1.408 2.43E+06 0.381
18 -0.787 1.810 0.770 1.175 2. 14E+06 0.317
19 -0.630 1.521 0.713 1.067 2.05E+06 0.300
20 -0.525 1.180 0.619 0.953 1.93E+06 0.298
22 -0.289 0.813 0.536 0.759 1.69E+06 0.270
24 -0.052 0.551 0.500 0.550 1.34E+06 0.216
26 0.079 0.472 0.528 0.447 1.18E+06 0.167
28 0.262 0.315 0.580 0.271 7.71E+05 0.097
30 0.393 0.289 0.664 0.217 6.61E+05 0.057
32 0.525 0.262 0.745 0.176 5.71E+05 0.031
34 0.551 0.260 0.762 0.170 5.88E+05 0.027
36 0.577 0.262 0.778 0.169 6. 15E+05 0.024
38 0.577 0.262 0.778 0.169 6.49E+05 0.024
40 0.577 0.260 0.778 0.167 6.77E+05 0.024
Table 82-2 Optical constants of h-BN for E IIc at 300 K.

eV £1 £2 n k a (cm· 1) R
0.01 5.095 0.0019 2.25718 0.00041 4.20E-01 0.149
0.02 5.117 0.0039 2.26201 0.00085 1.73E+00 0.150
0.03 5.156 0.0061 2.270686 0.0014 4. 11E+OO 0.151
134 llI-V BINARY SEMICONDUCTORS
Table B2·2 Continued (h-BN, E lie).

eV £1 £2 n k a (cm· l ) R
0.04 5.218 0.0089 2.284384 0.0020 7.92E+00 0.153
0.05 5.315 0.013 2.305403 0.0027 1.39E+01 0.156
0.06 5.469 0,018 2.338545 0.0039 2.40E+01 0.161
0.07 5.738 0.029 2.395424 0.0061 4.33E+Ol 0.169
0.08 6.315 0.059 2.513068 0.012 9.52E+01 0.186
0.084 6.787 0.092 2.605317 0,018 1.50E+02 0.198
0.088 7.667 0.174 2.76904 0.031 2.80E+02 0.220
0.092 9.896 0.517 3.146939 0.082 7.66E+02 0.268
0.093 11.12 0.789 3.33608 0.118 1.11E+03 0.291
0.094 13.08 1.360 3.62185 0.188 1.79E+03 0.323
0.095 16.73 2.894 4.105545 0.352 3.39E+03 0.373
0.096 24.93 9.487 5.079291 0.934 9.09E+03 0.463
0.0965 30.73 23.28 5.88559 1.978 1.93E+04 0.541
0.097 10.21 51.51 5.60019 4.599 4.52E+04 0.654
0.0975 -21.03 28.65 2.693383 5.319 5.26E+04 0.743
0.098 -16.51 11.19 1.310994 4.269 4.24E+04 0.777
0.099 -7.574 3.189 0.567488 2.810 2.82E+04 0.781
0.1 -3.643 1.456 0.374331 1.945 1.97E+04 0.736
0.101 -1.561 0.833 0.322938 1.290 1.32E+04 0.622
0.102 -0.285 0.544 0.40532 0.671 6.93E+03 0.331
0.104 1.192 0.291 1.099903 0.132 1.40E+03 0.006
0.108 2.556 0.137 1.599393 0.043 4.71E+02 0.053
0.112 3.208 0.092 1.791272 0.026 2.91E+02 0.080
0.12 3.867 0.069 1.966525 0.017 2. 12E+02 0.106
0.13 4.308 0.074 2.075534 0,018 2.35E+02 0.122
0.14 4.635 0.099 2.153098 0.023 3.27E+02 0.134
0.15 4.975 0.154 2.230641 0.034 5.24E+02 0.145
0.16 5.438 0.280 2.332758 0.060 9.74E+02 0.160
0.17 6.266 0.669 2.506752 0.133 2.30E+03 0.186
0.175 7.004 1.239 2.656666 0.233 4. 14E+03 0.208
0.18 8.041 2.824 2.877844 0.491 8.95E+03 0.247
0.185 7.105 7.303 2.940538 1.242 2.33E+04 0.311
0.19 0.271 6.415 1.829284 1.754 3.38E+04 0.340
0.195 0.159 2.433 1.13957 1.067 2. 11E+04 0.203
0.2 1.163 1.108 1.176585 0.471 9.55E+03 0.051
0.205 1.840 0.613 1.374647 0.223 4.64E+03 0.033
0.21 2.282 0.385 1.515978 0.127 2.70E+03 0.044
0.215 2.587 0.263 1.61035 0.082 1.78E+03 0.056
0.22 2.807 0.191 1.676491 0.057 1.27E+03 0.064
0.25 3.429 0.053 1.851722 0.014 3.59E+02 0.089
0.3 3.748 0.016 1.935985 0.0041 1.25E+02 0.102
0.35 3.873 0.0074 1.968077 0.0019 6.65E+01 0.106
0.4 3.939 0.0041 1.984694 0.0010 4.23E+Ol 0.109
0.5 4.005 0.0018 2.001223 0.00044 2.22E+01 0.111
0.6 4.037 0.00092 2.009119 0.00023 1.40E+01 0.112
0.7 4.054 0.00055 2.013571 0.00014 9.70E+00 0.113
0.8 4.066 0.00036 2.016346 0.000088 7. 17E+OO 0.114
0.9 4.073 0.00024 2.018199 0.000061 5.52E+00 0.114
1 4.078 0.00018 2.019502 0.000043 4.40E+00 0.114
4 4.996 0.613 2.239458 0.137 5.55E+04 0.148
Table 82·2 Continued (h-BN. E lie).

eV £1 £2 n k a (cm·1) R
4.2 5.031 0.544 2.246281 0.121 5. 15E+04 0.149
4.4 5.077 0.763 2.259631 0.169 7.53E+04 0.152
4.6 5.355 0.590 2.31758 0.127 5.93E+04 0.159
4.8 5.725 0.786 2.398327 0.164 7.98E+04 0.171
5 5.841 0.960 2.424856 0.198 1.00E+05 0.176
5.2 6.442 1.157 2.548268 0.227 1.20E+05 0.194
5.4 6.743 1.504 2.612601 0.288 1.58E+05 0.204
5.6 7.391 2.198 2.74781 0.400 2.27E+05 0.226
5.8 8.420 3.343 2.956269 0.565 3.32E+05 0.260
6 10.76 6.882 3.429685 1.003 6.lOE+05 0.335
6.1 7.414 11.03 3.217674 1.715 1.06E+06 0.379
6.2 3.227 10.43 2.659597 1.961 1.23E+06 0.383
6.3 1.330 8.478 2.226155 1.904 1.22E+06 0.365
6.4 0.810 6.801 1.956827 1.738 1.13E+06 0.335
6.6 1.041 5.181 1.778474 1.457 9.75E+05 0.277
6.8 1.133 4.569 1.708869 1.337 9.22E+05 0.251
7 0.775 4.036 1.562866 1.291 9. 16E+05 0.241
7.2 0.613 3.585 1.45781 1.230 8.98E+05 0.228
7.4 0.497 2.810 1.294506 1.086 8. 14E+05 0.196
7.6 0.833 2.221 1.265778 0.877 6.768+05 0.142
7.8 1.087 1.770 1.257786 0.703 5.56E+05 0.100
8 1.446 1.446 1.321041 0.547 4.44E+05 0.071
8.4 2.221 1.041 1.528585 0.340 2.90E+05 0.061
8.8 3.412 0.948 1.864565 0.254 2.27E+05 0.098
9.2 4.858 1.654 2.234854 0.370 3.45E+05 0.157
9.4 5.656 2.880 2.449735 0.588 5.60E+05 0.200
9.6 6.141 4.557 2.625728 0.868 8.45E+05 0.244
9.7 6.246 6.431 2.757708 1.166 1.15E+06 0.287
9.8 4.141 7.483 2.519209 1.485 1.48E+06 0.309
9.9 3.100 7.633 2.38101 1.603 1.61E+06 0.320
10 1.781 7.969 2.230093 1.787 1.81E+06 0.345
10.1 0.625 7.194 1.980602 1.816 1.86E+06 0.350
10.2 -0.382 7.148 1.840679 1.942 2.01E+06 0.378
10.3 -1.180 5.980 1.567655 1.907 1.99E+06 0.387
10.4 -1.735 5.077 1.347356 1.884 1.99E+06 0.405
10.5 -1.446 3.979 1.18056 1.685 1.79E+06 0.378
10.6 -1.446 3.585 1.100042 1.630 1.75E+06 0.377
10.8 -0.856 2.660 0.984521 1.351 1.488+06 0.317
11 -0.440 2.221 0.955043 1.163 1.30E+06 0.262
11.5 0.254 1.874 1.035691 0.905 1.05E+06 0.165
12 0.833 1.631 1.154087 0.707 8.60E+05 0.102
12.5 1.157 1.700 1.267451 0.671 8.50E+05 0.093
13 1.272 1.851 1.326258 0.698 9.19E+05 0.101
13.5 1.457 2.082 1.413952 0.736 1.0 1E+06 0.112
14 1.668 2.616 1.544507 0.847 1.20E+06 0.141
15 0.664 3.299 1.419182 1.162 1.77E+06 0.212
16 -0.379 2.654 1.072806 1.237 2.01E+06 0.264
16.5 -0.550 2.085 0.896325 1.163 1.95E+06 0.276
17 -0.379 1.611 0.798822 1.009 1.74E+06 0.249
18 -0.152 1.270 0.750835 0.846 1.54E+06 0.206
Table B2-2 Continued (h-BN, E lie).

eV E1 E2 n k a (cm'l) R
19 0.000 1.043 0.72203 0.722 1.39E+06 0.172
20 0.190 0.967 0.766423 0.631 1. 28 E+06 0.129
21 0.171 0.967 0.759072 0.637 1.36E+06 0.132
22 0.190 0.758 0.696852 0.544 1.2IE+06 0.122
24 0.360 0.550 0.713246 0.385 9.38E+05 0.075
26 0.550 0.436 0.791025 0.276 7.26E+05 0.036
28 0.645 0.417 0.840317 0.248 7.04E+05 0.025
30 0.626 0.474 0.839772 0.282 8.58E+05 0.030
32 0.588 0.379 0.802199 0.236 7.67E+05 0.029
34 0.607 0.360 0.809983 0.222 7.66E+05 0.026
36 0.607 0.341 0.807049 0.211 7.72E+05 0.025
38 0.607 0.284 0.79894 0.178 6.86E+05 0.022
40 0.607 0.209 0.789972 0.132 5.35E+05 0.019
B3 BORON PHOSPHIDE
(BP)

Boron phosphide (BP) is a semiconductor crystallizing in the zinc-blende structure.
Most of the physical properties of BP have not been fully understood because it was
extremely difficult to grow sufficiently large crystals.

Figure B3-1 shows the electronic energy-band structure ofBP as calculated by
Wentzcovitch et al. [1] within the total-energy pseudopotential method employing a
local-density approximation. The theoretical studies [1-6] suggest that BP is an indi-
rect-gap semiconductor. We summarize in Table B3-1 the theoretically obtained
12.0 I"---'--~--:;::'I""::"":""_ _ _----.
6.0
~ 0.0
>-
(,!)
a:
w
Z-6.0
w
BP
-12.0
r"
-18.0 L
A r Ll X U,K E r
Figure B3-1 Electronic energy-band structure of BP as calculated within the total-energy
pseudopotential method employing a local-density approximation. (From Wentzcovitch et
al. [1].)
137
TABLE B3·1 Lowest indirect- and direct-gap energies/or BP (in eV).

Indirect Gap Direct Gap Ref
2.19 (rw-+x l) 5.04 (L3~LI) a
-2.0 (r1S~LI) -2.0 (r1S~rl) b
1.2 (rIS~a",in) 3.3 (r1S~r1S) c
-0 (rIS~X3) d
1.14 (rls~£\.m) 3.45 (rls~rls) e
1.53 (r\S~~n) 3.48 (r1S~rlS) /
1.10 (rlS~~n) 3.50 (r\S~r1S) g
GL. A. Hemstreet, Jr. and C. Y. Fong, Phys. Rev. B 6,1464 (1972).
bM._Z. Huang and W. Y. Ching, J. Phys. Chem. Solids 46, 977 (1985).
cR. M. Wentzcovitch et al., Phys. Rev. B 34, 1071 (1986).
dB. N. Onwuagba, Solid State Commun. 89, 289 (1994).
·P. Rodriguez-Hernandez et al., Phys. Rev. B 51, 14705 (1995).
IPseudopotential calculation [Po Kocinski and M. Zbroszczyk, Semi-
condo Sci. Techno!' 10, 1452 (1995)].
8 LMTO calculation [Po Kocinski and M. Zbroszczyk, Semicond. Sci.
Technol. 10, 1452 (1995)].
indirect- and direct-gap energies for BP. Huang-Ching's result [3] yielded the low-
est conduction state at L; however, the majority of the theoretical calculations re-
sulted at X or L\.iD' Recent calculations [1,5,6] suggest that the lowest r conduction
state is at r ls (p like), not at r 1 (s like).
Experimentally, an indirect absorption edge of 2.0 eV was obtained from a
square-root plot of the absorption coefficients [7,8] (see Fig. B3-3 below). Peaks and
shoulder at 5,6.9, and 8.0 eV in the reflectivity spectrum ofBP were found (see Fig.
B3-2 below) and interpreted as due to transitions at r, X, and L, respectively [7].

Little is known about the optical properties of BP. The static dielectric constant of
BP was determined by Takenaka et al. [9] by measuring C-V characteristics of an n-
BP-Sb Schottky diode. Single crystal of n-BP (n=8xlO 17 cm-3) was epitaxially
grown on a Si substrate by thermal reaction in a B2~-PH3-H2 system. The value of
e.=11 at room temperature was determined. These authors also determined the n
value of 3.l at ~5893 Afrom a Brewster angle method.
The fundamental reflectivity of BP was measured by Gielisse et al. [10] in the IR
et
region and by Wang al. [7] in the UV region. We reproduce in Fig. B3-2 these
measured results [7,10]. The crystals used in the IR region were hot-pressed com-
pacts of BP single crystals [lO]. The IR reflectivity spectrum in Fig. B3-2 (a)
showed a monotonic decrease in R from about 15% to 9%, with increasing wave
number, with an extremely weak reststrahlen band around 825 em-I. The BP crystals
used by Wang et al. [7] were grown from metallic solvents. They had a bulkp-type
conductivity (10.2 Q·cm) and were orange-red in color, several mm in size, polyhe-
dral in shape, hard, and brittle. Reflectivity measurements were made on an as-
B3 BORON PHOSPHIDE (BP) 139
16
(a)
~ 14
~
§
...
12
~
10
750 800 8SO 900

WAWNUMIER em-I
12
--
orb
units 1\
(b)
Figure B3·2 (a) Room-
1\
10
temperature IR reflectivity of
/" BP. (From Gielisse et al.
8
/" V ........... [10].) (b) Room-temperature
6
1\ ........ / UV reflectivity of BP. (From
Q::
r-- Wang et al. [7].)
4
o
4 6 8 m n U ffi ~~~
flf,,_
grown surface ofBP in the wavelength range of 0.05-0.6 J.UI1 [Fig. B3-2 (b)].
Optical transmittance studies have been performed on BP by several authors
[7,8,11]. The values of the extinction coefficient k obtained by these authors were
6.6xl0-4-6.2xl0-s in the wavelength range 0.422 to 0.710 J.UI1 [12]. Figure B3-3 re-
produces a plot of a.'fJ. vs. E measured by Archer et al. [8]; •
REFERENCES
1. R. M. Wentzcovitch, K. J. Chang. and M. L. Cohen. Phys. Rev. B 34. 1071
(1986).
2. L. A. Hemstreet. Jr. and C. Y. Fong. Phys. Rev. B 6.1464 (1972).
3. M.-Z. Huang and W. Y. Ching. J. Phys. Chem. Solids 46.977 (1985).
4. B. N. Onwuagba. Solid State Commun. 89. 289 (1994).
5. P. Rodriguez-Hernandez. M. Gonzalez-Diaz. and A. Munoz. Phys. Rev. B 51.
14705 (1995).
6. P. Kocinski and M. Zbroszczyk, Semicond. Sci. Technol. 10, 1452 (1995).

7. C. C. Wang, M. Cardona, and A. G. Fischer, RCA Rev. 25,159 (1964).
8. R. J. Archer, R. Y. Koyama, E. E. Loebner, and R. C. Lucas, Phys. Rev. Lett.
12,538 (1964).
9. T. Takenaka, M. Takigawa, and K. Shohno, lpn. l. Appl. Phys. 15, 2021
(1976).
10. P. J. Gielisse, S. S. Mitra, J. N. Plendl, R. D. Griffis, L. C. Mansur, R. Marshall,
and E. A. Pascoe, Phys. Rev. 155, 1039 (1967).
11. B. Stone and D. Hill, Phys. Rev. Lett. 4,282 (1960).
12. B. O. Seraphin and H. E. Bennett, in Semiconductors and Semimetais, edited by
R. K. Willardson and A. C. Beer (Academic, New York, 1967), Vol. 3, p. 499.
I
13
I
12
1
/
10
9 /
8
I
"'01to 6
J
5
/
4 l'
'/
3
I
2
I
o
1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
hv(eVI-
Figure B3·3 oJ...E)l12 VS. E plots for BP measured at 300 K. (From Archer et al. [8].)
B4 BORON ARSENIDE
(BAs)

Boron arsenide (BAs) crystallizes in the cubic, zinc-blende structure with lattice
constant of 4.777 A [1]. It remains relatively unexplored because of the difficulties
involved in syntheses of pure single crystals.

Figure B4-1 shows the electronic energy-band structure of BAs as calculated by
Stukel [2] with a first-principle orthogonalized-plane-wave method. We can see two
minima in the bottom conduction band which are lower than the minimum at r. The
lowest minimum occurs at -0.8 of the distance from the r point to the X point. The
11.0 r n - - . - - , - - - , - - - , - - - , - - - - , - - - " , - -...........-=::----, 11.0
5.0 5.0
:;
~
2.0 2.0
r
(!)
a::
w
z
w
-1.0 -1.0
-4.0 -4.0
BAs
X 3V -7.0
W L r x u r
Figure B4-1 Electronic energy-band structure of BAs as calculated with a first-principle
orthogonaJized-plane-wave method. (From Stukel [2].)
141
corresponding indirect gap, rlS~~in' is 1.6 e V. The next lowest minimum occurs at
L (l.:J) where r1S~l.:J is 2.81 eV. The lowest direct gap, r1S~r1S' is 3.56 eV.
Experimentally, Ku [3) made transmittance measurements at room temperature on
powdered samples and estimated an optical gap of 1.46 eV.

Very little is known about the optical properties of BAs. Ku [3) made optical ab-
sorption measurements not only on cubic BAs but also on rhombohedral boron
subarsenide in the wavelength range 0.55-1.50 Jlm. The crystals used were obtained
by a vapor-phase technique. The optical gaps estimated from this study were 1.46
eV for cubic BAs and 1.51 eV for boron subarsenide. The author noted, however,
that the 1.51 e V value might be considerably less than the actual optical gap of
subarsenide since the subarsenide samples studied were heavily contaminated with
Si and the absorption coefficient of Si is extremely high in this wavelength region.
Chu and Hyslop [4] studied optical absorption of BAs deposited on Si substrate
by the thermal decomposition of a diborane-arsine mixture in a hydrogen atmos-
phere. However, the BAs film deposited was amorphous film rather than crystalline
BAs. The optical gap of this film was 0.67 eV.
REFERENCES
1. A. J. Perri, S. La Placa, and B. Post,Acta Cryst. 11,310 (1958).
2. D. J. Stukel, Phys. Rev. B 1,3458 (1970).
3. S. M. Ku, J. Electrochem. Soc. 113,813 (1966).
4. T. L. Chu and A. E. Hyslop, 1. Electrochem. Soc. 121,412 (1974).
85 ALUMINUM NITRIDE
(AIN)
BS.l GENERAL REMARKS

Aluminum nitride (AIN) has a large band gap (-6 eV at 300 K), a high thermal con-
ductivity (-3.2 W cm·1 K· 1 at 300 K), and large piezoelectric constants (-12-5IxlO· IO
cmN at 300 K) (see Ref. [1]). AIN has also excellent insulator and passivation
properties, low dispersion of permittivity, and low dielectric loss. These make it use-
ful for numerous device applications (see, e.g., Ref. [2]).
BS.2 ELECTRONIC ENERGY-BAND STRUCTURE

At ambient condition AIN crystallizes in tl\e hexagonal wurtzite structure. A number
of theoretical calculations of the electronic energy-band structure exist [3,4]. We
show in Fig. B5-1 the energy-band structure of AIN as calculated with a nonrelativ-
istic nonlocal pseudopotential method by Jones and Lettington [5].
AIN is a direct-band-gap semiconductor. Due to the hexagonal symmetry of AIN,
the top of the valence band at the r point is split into two levels, in contrast to the
cubic materials where the top of the valence band is triply degenerate. The order of
the levels at the top of the valence band, r l and r 6 , is inverted in AlN with respect to
GaN. The difference between these levels is 0.2 eV in AlN and 0.02 eV in GaN [4].
The lowest direct gaps, r 6 --+rl (E.lc) and rl--+rl (E II c), obtained theoretically are
6.06 and 5.31 eV, respectively [5] (6.0 and 5.8 eV, respectively, Ref. [4]), in reason-
able agreement with experiment (-6 eV, Ref. [1]). The second lowest conduction
minimum occurs in the U direction. The corresponding energy gap, i.e., indirect en-
ergy gap r ls --+L1,3 (U), is 6.9 eV [4]. The higher direct-gap transition energies ex-
pected theoretically are: 9.3 eV (rS--+r3) [5] (9.4 eV, Ref. [4]); 8.5 eV (U3--+U3) [5];
8.9 eV (U4 --+U3) [5]; 9.8 eV (M4 --+M3) [5] (8.5 eV, Ref. [4]); 10.1 eV (H3--+H3) [5]
(10.5 eV, Ref. [4]).
The lowest absorption edge of 6.2 eV (T=300 K) was determined from optical
absorption measurements of AIN [6,7]. No strong dichroism was observed at this
absorption edge, and hence the fundamental-edge energy separation for polarizations
between E.lc (r6 --+rl) and E II c (rl--+rl) could not be successfully estimated [7].
However, the rl--+rl transitions were concluded to occur at lower energy than the
r 6 --+r l transitions.
The fundamental reflectivity spectrum R(E) for AlN measured by Michailin et al.
[8] shows CP peaks at 7.8 and 8.6 eV, and the groups of peaks in the region 10 to 16
143
__ 6
>Q)
--
W2
4
-6
-B~ ____ ~ __ ~ ____ ~ __ ~ ______ ~ __ ~ ______ ~
A R L U M E r fl A 5 H P K r
Figure B5·1 Electronic energy-band structure of AlN as calculated with a nonrelativistic
nonlocal pseudopotential method. (From Jones and Lettington [5].)
eV with a maximum at 13.8 eV, as well as the shoulder at 17.5 eV. Yamashita et at.
[7] also found peaks in the R(E) spectrum at -6.2 and 7.5-7.8 eV. Loughin and
French [9], however, suggested that the 7.5-7.8-eV peaks are observed for the aque-
ously polished specimen, but not for the nonaqueously polished, single-crystalline
specimen. Because hydrolysis of AIN occurs easily, forming ammonia and bohmite,
they concluded that the best optical results can be obtained on nonaqueously pol-
ished specimens. Loughin et at. [3,9] observed several CP structures in the vacuum-
UV e(E) spectrum of the nonaqueously polished sample and identified them to tran-
sitions as N 2p~A13s (8.7 eV), Al=N~Al3p (14 eV), and N 2p~A13d (33 eV).
Recent theoretical studies [10-12] have shown that in the zinc-blende structure,
AIN will be an indirect gap (['~X, 3.5-5.1 eV) semiconductor while GaN will have
a direct gap of 3.1-3.4 e V at [' as the lowest energy gap. The latter is in good
agreement with recent absorption experiments on cubic GaN (3.2-3.3 eV, see Ref.
[11]). No experimental data has, however, been reported on cubic, zinc-blende AIN.

The lattice one- or multiphonon absorption bands in AIN appear for photon wave
numbers below 2000 em-I. Optical properties in the one-phonon absorption region
have been studied by Collins et at. [13], Akasaki and Hashimoto [14], and Pastriiak
and Hejda [15], and those in the two-phonon absorption region by Collins et at. [13]
and Pastrfuik and Hejda [16]. The crystals studied were single-crystalline AIN
BS ALUMINUM NITRIDE (AlN) 145
[13,15,16] and polycrystalline AIN [14]. IR optical properties in the reststrahlen re-
gion of epitaxial AIN film deposited on (OOOl)-oriented 6H-SiC substrate has also
been reported [17].
The static and high-frequency dielectric constants determined from unpolarized
light by Akasaki and Hashinoto [14] were e,=8.50 and e~=4.68, respectively, while
those by Collins et al. [13] were e,=9.14 and e~=4.84, respectively. Polarization
measurements by Collins et al. [13] revealed a sharp minimum in the reststrahlen
band for Ell c at -111.0 meV (-1376 cm-I ); Otherwise the reflectivity curves were
identical for both polarizations. The reflectivity minimum at -111.0 me V was tenta-
tively assigned to be due to an unspecified two-phonon process resulting from inter-
ference between two components of the complex dielectric susceptibility of the
crystal [13].
The refractive indices of AIN in the transparent region for both El.c and E I c
have been measured by Past:nl~ et al. [18,19]. The samples used were prepared by
direct reaction of aluminum vapor with nitrogen at temperatures of 1900 to 2000°C.
The c axis was in the crystal plane and parallel to the longer deltoid edge. The
measured data clearly showed the birefringence of l1n=ne(E II c)-no(El.c)>O. At
visible wavelengths, an n value of 2.1-2.3 is generally accepted [18,19], although
thin AIN films often give lower values (see Ref. [9]). More recently, Tang et al. [20]
have used an optical waveguide technique to determine the n dispersion in
MOCVD-grown AIN on sapphire substrate for El.c in the wavelength range be-
tween 632.8 and 488.0 nm.
Optical absorption in AIN has been measured for El.c by Yim et al. [21] and
Slack and McNelly [22] and both for El.c and E II c by Past:nl~ and Roskovcova
[23]. We can see that the absorption coefficients on the low energy side of the band
edge vary largely from sample to sample [21-3]. The samples studied by Slack and
McNelly [22] show the lowest overall impurity absorption of any of the single or
polycrystalline samples yet studied. The two features of the extrinsic absorption,
which were the broad band extending from 6x103~~.3x104 cm- I and the rather
sharp peak at E-2.3x104cm-1 or 2.85 eV, were found from these samples [22] and
they were attributed to nitrogen vacancies (6x103~~.3x104 cm-I ) and oxygen
(E-2.3x104 cm-I ), respectively [24].
Optical properties in the interband transition region of AIN have been studied by
Loughin et al. [3,9] and Guo et al. [25] from measurements of the fundamental re-
flectivity spectra. We reproduce in Fig. B5-2 the complex dielectric function,
e(E)=el(E)+i~(E), for AIN with El.c obtained from the KK analysis of the reflec-
tance data [3]. An AIN single crystal used was grown by a modified Bridgman tech-
nique [22,24]. We note that their obtained data show strong absorption (-2x10 s cm-I ,
see Ref. [9]) at -5 eV, i.e., in the subband-gap region. The n (e l ) data in the trans-
parent region are also found to be much larger than those obtained by PastrMk and
Roskovcova [18]. Loughin et al., however, mentioned neither reason for these nor
accuracy of their measurement. Guo et al_ [25] reported the ~(E) spectrum in the
energy range from 6 to 120 e V obtained form the KK analysis of the reflectance
(8)
1 (b)
2
--,-
to)
" ,,",,,
,. \/ '..\rI:..:,.:"-:,,,_ _ _...c::.-:::.:--~-.=:;--~-:::.--::':-:::'-:::--"""-:::':--=-""'--------=
-2
-6
4 8 12 16 20 24 28 32 36
Energy (eV)
Figure B5-2 (a) f.2(E) and (b) f. 1(E) spectra for AlN with EJ.c obtained from the KK analy-
sis of the reflectance data. The dashed lines correspond to those obtained from the first prin-
ciples. (From Loughin et at. [3].)
data. They found four CPs peaking at 7.6,8.9,13.0, and 14.6 eV.
Tables BS-1 and BS-2 list the 300-K values for the optical constants of AIN with
E.ic and E I c, respectively. A set of the optical constants in the IR region for El.c
(ES;l.O eV) were calculated from the reststrahlen parameters reported by Collins et
at. [13]. Since the reststrahlen reflectivity was practically the same for both polari-
zations [13], only the optical constants for El.c were listed in Table BS-l. The re-
fractive-index values in the transparent region for both El.c and E I c were taken
from Pastrilak et at. [18]. The a(E) values for El.c were taken from Pastrilak and
Roskovcova [23] and Vim et at. [21] and those for E II c from Pastrnak and
Roskovcova [23].
The (1:.1, ~), (n, k), a, and R values in Tables BS-1 and BS-2 are plotted in Figs.
BS-3-BS-6, respectively. The solid and dashed lines represent the data for El.c and
E I c, respectively.
B5 ALUMINUM NITRIDE (AlN) 147
REFERENCES
2. S. N. Mohammad, A. A. Salvador, and H. Mork~, Proc. IEEE 83, 1306
(1995).
3. S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, Appl. Phys.
Lett. 63, 1182 (1993), and references cited therein.
4. A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, Phys. Rev.
B 48, 11810 (1993).
5. D. Jones and A. H. Lettington, Solid State Commun. 11,701 (1972).
6. P. B. Perry and R. F. Rutz,Appl. Phys. Lett. 33, 319 (1978).
7. H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida, J. Appl. Phys. 50, 896
(1979).
8. V. V. Michailin, V. E. Oranovskii, S. Pacesova, J. PastrMk, and A. S. Salama-
tOY, Phys. Status Solidi B 55, K51 (1973).
9. S. Loughin and R. H. French, in Properties of Group III Nitrides, EMIS Da-
tareviews Series No. 11, edited by J. H. Edgar (INSPEC (lEE), London, 1994),
p. 175.
10. W. R. L. Lambrecht and B. Segall, Phys. Rev. B 43, 7070 (1991).
11. A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirlehy, and S. G. Louie, Phys. Rev.
B 48, 11810 (1993).
12. W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, J. Appl. Phys. 79,188 (1996).
13. A. T. Collins, E. C. Lightowlers, and P. J. Dean, Phys. Rev. 158, 833 (1967).
14. I. Akasaki and M. Hashimoto, Solid State Commun. 5, 851 (1967).
15. J. Pastrnak and B. Hejda, Phys. Status Solidi 35,941 (1969).
16. J. Pastrilak and B. Hejda, Phys. Status Solidi 35, 953 (1969).
17. P. Wisniewski, W. Knap, J. P. Malzac, J. Camassel, M. D. Bremser, R. F.
Davis, and T. Suski, Appl. Phys. Lett. 73,1760 (1998).
18. J. Pastrilak and L. Roskovcova, Phys. Status Solidi 14, K5 (1966).
19. L. Roskovcova, J. Pastrilak, and R. Babu§kova, Phys. Status Solidi 20, K29
(1967).
20. X. Tang, Y. Yuan, K. Wongchotigul, and M. G. Spencer, Appl. Phys. Lett. 70,
3206 (1997).
21. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J.1. Pankove, M. Ettenberg, and S. L.
Gilbert, J. Appl. Phys. 44,292 (1973).
22. G. A. Slack and T. F. McNelly, J. Cryst. Growth 42,560 (1977).
23. J. Pastrilak and L. Roskovcova, Phys. Status Solidi 26,591 (1968).
24. G. A. Slack and T. F. McNelly, J. Cryst. Growth 34,263 (1976).
25. Q. Guo, M. Nishio, H. Ogawa, and A. Yoshida, Phys. Rev. B 55, R15987
(1997).
100 8 AIN
10 50 6 ~
---------_ .. -_ ..
1//
........ -'
4
£2 Figure B5-3 E1 (E) and
2 _ Elc (Xl00), E2(E) spectra for AIN at
-50 ----- Ell c ,'" 300K.
o~--~--~~--~
234 6
Photon energy (eV)
10 3
8
2
~ n
------------_ .. -..........
"
6
~
AIN
I::
Figure B5·4 n(E) and k
k(E) spectra for AIN at 1 (X200)
300K.
2 - Elc
----- Ellc
0 0
10-1 2 3 4 6
Photon energy (eV)
AIN
Figure B5·5 a(E)

Elc spectrum for AlN at 300
Ellc K.
lO°'---'--,-,-L.LWl.-.J-.L...L.ULWJ
10-2 10-1 100 4 6 8
Photon energy (eV)
B5 ALUMINUM NITRIDE (AIN) 149
.··
AIN
0.2
,
.
.
a: ,,
-'
0.15
Figure B5·6 R(E) spec-
Elc trum for AIN at 300 K.
Ellc
3 4 6
Photon energy (e V)
Table B5·1 Optical constants of AlN for EJ. cat 300 K.

eV R
0.01 9.204 0.017 3.034 0.0028 2.89E+00 0.254
0.02 9.407 0.038 3.067 0.0062 1.25E+01 0.258
0.03 9.792 0.067 3.129 0.011 3.24E+01 0.266
0.04 10.45 0.114 3.233 0.Q18 7.18E+01 0.278
0.05 11.62 0.209 3.408 0.031 1.55E+02 0.299
0.06 13.91 0.449 3.730 0.060 3.66E+02 0.333
0.065 16.07 0.747 4.009 0.093 6. 14E+02 0.361
0.07 19.92 1.459 4.466 0.163 l.16E+03 0.403
0.075 28.58 3.940 5.358 0.368 2.80E+03 0.472
0.08 59.74 27.28 7.919 1.723 1.40E+04 0.616
0.081 71.30 53.54 8.957 2.989 2.45E+04 0.668
0.0815 71.67 77.75 9.419 4.127 3.41E+04 0.700
0.082 57.28 109.2 9.502 5.746 4.78E+04 0.735
0.0825 18.48 132.2 8.716 7.581 6.34E+04 0.770
0.083 -28.73 123.6 7.008 8.822 7.42E+04 0.803
0.0835 -55.23 93.28 5.156 9.045 7.66E+04 0.828
0.084 -60.74 64.66 3.740 8.645 7.36E+04 0.846
0.085 -51.03 31.95 2.142 7.458 6.43E+04 0.869
0.086 -39.67 17.99 1.394 6.451 5.62E+04 0.882
0.087 -31.29 11.32 0.996 5.682 5.01E+04 0.890
0.088 -25.27 7.717 0.759 5.084 4.54E+04 0.895
0.09 -17.47 4.209 0.500 4.209 3.84E+04 0.900
0.095 -8.356 1.521 0.262 2.903 2.80E+04 0.895
0.1 -4.355 0.773 0.184 2.095 2. 12E+04 0.873
0.11 -0.714 0.309 0.179 0.864 9.63E+03 0.665
0.12 0.968 0.164 0.988 0.083 1.0 1E+03 0.002
0.13 1.928 0.100 1.389 0.036 4.75E+02 0.027
0.14 2.543 0.067 1.595 0.021 2.99E+02 0.053
0.15 2.967 0.048 1.723 0.014 2.llE+02 0.070
0.16 3.276 0.036 1.810 0.010 1.59E+02 0.083
0.17 3.510 0.027 1.874 0.0073 1.26E+02 0.092
Table 85-1 Continued (AIN, E.Lc).

eV £i £2 n k ex (em-i) R
0.18 3.692 0.022 1.921 0.0056 1.02E+02 0.099
0.19 3.837 0.017 1.959 0.0044 8.53E+Ol 0.105
0.2 3.955 0.014 1.989 0.0036 7.25E+Ol 0.109
0.3 4.487 0.0034 2.118 0.00080 2.44E+Ol 0.129
0.4 4.648 0.0013 2.156 0.00031 1.25E+Ol 0.134
0.5 4.719 0.00066 2.172 0.00015 7.72E+00 0.137
0.6 4.757 0.00038 2.181 0.000086 5.25E+00 0.138
0.7 4.779 0.00023 2.186 0.000054 3.81E+00 0.139
0.8 4.794 0.00016 2.189 0.000036 2.89E+00 0.139
0.9 4.803 0.00011 2.192 0.000025 2.27E+00 0.139
1 4.810 0.000079 2.193 0.000018 1.83E+00 0.140
2.2 4.683 2.164 0.135
2.4 4.700 2.168 0.136
2.6 4.726 2.174 0.137
2.8 4.748 2.179 0.138
3 4.787 2.188 0.139
3.2 4.831 2.198 0.140
3.4 4.915 2.217 0.143
3.6 4.982 0.00010 2.232 0.000022 8.00E+00 0.145
3.8 5.036 0.00020 2.244 0.000044 1.70E+OI 0.147
4 5.117 0.00078 2.262 0.00017 7.00E+Ol 0.150
4.1 5.162 0.0011 2.272 0.00024 1.00E+02 0.151
4.2 5.217 0.0017 2.284 0.00038 1.60E+02 0.153
4.3 5.272 0.0032 2.296 0.00069 3.00E+02 0.155
4.4 5.345 0.0050 2.312 0.0011 4.80E+02 0.157
4.5 5.401 0.0061 2.324 0.0013 6.00E+02 0.159
4.6 5.462 0.0065 2.337 0.0014 6.50E+02 0.161
4.7 5.532 0.0069 2.352 0.0015 7.00E+02 0.163
4.8 5.593 0.0072 2.365 0.0015 7.40E+02 0.165
4.9 5.693 0.0068 2.386 0.0014 7.lOE+02 0.168
5 5.789 0.0062 2.406 0.0013 6.50E+02 0.170
5.1 5.885 0.0059 2.426 0.0012 6.30E+02 0.173
5.2 6.022 0.0067 2.454 0.0014 7.20E+02 0.177
5.3 6.121 0.0078 2.474 0.0016 8.50E+02 0.180
5.4 6.230 0.011 2.496 0.0022 1.20E+03 0.183
5.5 6.360 0.014 2.522 0.0028 1.54E+03 0.187
5.6 6.554 0.018 2.560 0.0034 1.95E+03 0.192
5.7 6.755 0.026 2.599 0.0050 2.90E+03 0.197
5.8 7.054 0.032 2.656 0.0060 3.50E+03 0.205
5.9 0.0087 5.20E+03
6 0.021 1.30E+04
6.1 0.084 5.20E+04
6.2 0.302 1.90E+05
6.3 0.352 2.25E+05
B5 ALUMINUM NITRIDE (AlN) 151
Table BS·2 Optical constants of AIN for E /I c at 300 K.
eV £) £2 n k a (em') R
2.2 4.906 2.215 0.143
2.4 4.920 2.218 0.143
2.6 4.946 2.224 0.144
2.8 4.991 2.234 0.146
3 5.027 2.242 0.147
3.2 5.076 2.253 0.148
3.4 5.176 2.275 0.152
3.6 5.244 0.00015 2.290 0.000033 1.20E+01 0.154
3.8 5.318 0.00042 2.306 0.000091 3.50E+01 0.156
4 5.438 0.0012 2.332 0.00025 1.00E+02 0.160
4.1 5.499 0.0017 2.345 0.00036 1.50E+02 0.162
4.2 5.570 0.0023 2.360 0.00049 2.lOE+02 0.164
4.3 5.626 0.0037 2.372 0.00078 3.40E+02 0.166
4.4 5.693 0.0062 2.386 0.0013 5.80E+02 0.168
4.5 5.760 0.0077 2.400 0.0016 7.30E+02 0.170
4.6 5.842 0.0083 2.417 0.0017 8.00E+02 0.172
4.7 5.939 0.0094 2.437 0.0019 9.20E+02 0.175
4.8 6.037 0.010 2.457 0.0020 9.50E+02 0.178
4.9 6.160 0.0090 2.482 0.0018 9.00E+02 0.181
5 6.275 0.0087 2.505 0.0017 8.80E+02 0.184
5.1 6.411 0.010 2.532 0.0019 9.70E+02 0.188
5.2 6.574 0.011 2.564 0.0021 1.l0E+03 0.193
5.3 6.739 0.012 2.596 0.0023 1.25E+03 0.197
5.4 6.885 0.014 2.624 0.0027 1.50E+03 0.201
5.5 7.092 0.017 2.663 0.0031 1.74E+03 0.206
5.6 7.393 0.021 2.719 0.0038 2. 15E+03 0.214
5.7 0.0045 2.60E+03
5.8 0.0063 3.70E+03
5.9 0.012 7.20E+03
6 0.016 9.50E+03
B6 ALUMINUM PHOSPHIDE
(AlP)

Aluminum phosphide (AlP) remains one of the least studied III-V semiconductors.
This is mainly due to the difficulty of growing the crystal in sufficiently pure form
and its instability in a humid atmosphere. The few published papers are mainly con-
cerned with crystal growth techniques, but some of them also report measurements
on structural, electronic, and optical properties (see Ref. [1]).

AlP is an indirect-band-gap semiconductor with the conduction-band minimum at X
and the valence-band maximum at r. The electronic energy-band structure of AlP
was investigated theoretically by several authors [2-4]. Figure B6-1 shows the band
structure of AlP as calculated using the semi-ab initio orthogonalized LCAO method
by Huang and Ching [3]. This calculated result gives the lowest indirect and direct
gaps of Egx=2.51 eV (rls-+xl) and Eo=3.74 eV (rls-+rl), respectively. These are in
Figure B6-1 Electronic energy-band

structure of AlP as calculated using
the semi-ab initio orthogonalized
LCAO method. (From Huang and
Ching [3].) The locations of several
interband transitions are included by
the vertical arrows.
-1SL-_ _..L..-_ _--'_.J...,.-_:------'
l A rAt r
152
B6 ALUMINUM PHOSPHIDE (AlP) 153
reasonable agreement with Monemar's experimental data of Eg"=2.505±O.01 eVand

Eo=3.63±O.02 eV [5].
The theoretical calculation [3] also suggests the higher-lying-gap transitions (CPs),
EI=4.37 eV (l:J~LI)' E2=4.78 eV (XS~XI)' and Eo'=5.09 eV (rIS~r1S). Rodriguez
and Armelles [6] measured SE spectra of AlxGal."p alloy (0:Sxg).53) to determine
the x-composition dependence of the Eo and EI CP energies. Their measured x-
dependence data yield, in the limit x~1.0 (AlP), Eo=3.71 eV (or 3.98 eV) and
EI=4.17 eV. However, no further experimental data are available on the CP energies
for AlP at present.

To date, there have been reported no data on the optical properties of AlP in the rest-
strahlen region. By measuring the long-wavelength n data and using the Lyddane-
Sachs-Teller relation, however, Monemar [7] obtained the static and high-frequency
dielectric constants of AlP to be £.=9.8 and £..=7.6.
The n(E) data for AlP from E=O.5 to 2.8 eV were measured by Monemar [7]. The
AlP crystals were grown by the reaction of PH3 with liquid Al in an open system at
1500°C. The refractive index was found to vary from 2.75±O.1 at 0.5 eV, to
3.10±0.1 at 2.8 eV. Measurements on the temperature dependence of n for AlP were
made by Grimmeiss and Monemar [8]. The resulting coefficient n·l(dn/d1) for E=0.7
eV near T=300 K was (3.6±O.3)xl0-s KI.
Measurements on the optical absorption spectra of AlP were carried out by Mo-
nemar [7] at 4-300 K and by Lorenz et at. [9] at 2-300 K. The AlP crystals used by
Lorenz et al. [9] were grown by a modified Bridgman technique. The measured ab-
sorption spectra showed no clear structures involving phonons near the fundamental
absorption edge (Le., indirect absorption edge) of AlP even at low temperatures
[7,9]. On the other hand, Monemar [5] identified some phonon-related fine struc-
tures in the PL excitation spectra of AlP at low temperatures [5].
Table B6-1 lists the 300-K values for the optical constants of AlP taken from Mo-
nemar [7]. Since the purity of the crystals used by him was not very high, an ab-
sorption coefficient of the order 5-20 cm-I in the region 2.0-2.4 eV was believed to
have an extrinsic origin [7]. The (£1' ~), (n, k), and a. values in Table B6-1 are plot-
ted in Figs. B6-2-B6-4, respectively.
REFERENCES

ed by K.-H. Hellwege and O. Madelung, Landolt-Btimstein, New Series,
2. Y. F. Tsay, A. J. Corey, and S. S. Mitra, Phys. Rev. B 12, 1354 (1975), and ref-
erences cited therein.
3. M.-Z. Huang and W. Y. Ching, J. Phys. Chern. Solids 46, 977 (1985).
4. P. Rodriguez-Hernandez and A. Zuiioz, Semicond. Sci. Technol. 7, 1437

(1992).
5. B. Monemar, Phys. Rev. B 8, 5711 (1973).
6. J. M. Rodriguez and G. Armelles, 1. Appl. Phys. 69, 965 (1991).
7. B. Monemar, Solid State Commun. 8,1295 (1970).
8. H. G. Grimmeiss and B. Monemar, Phys. Status Solidi AS, 109 (1971).
9. M. R. Lorenz, R. Chicotka, G. D. Pettit, and P. J. Dean, Solid State Commun. 8,
693 (1970).
12.-~~--~-r~--.-~-.
11
10
9
8
7
'" 6
5
4 £2
(X500)
3
Figure B6·2 El(E) and ~(E) spec-
2 tra for AlP at 300 K.
1
o 1 2 3 4
Photon energy (eV)
3
~
~
2
c AlP
k
(X500)
1 Figure B6·3 n(E) and k(E) spectra
for AlP at 300 K.
0 1 2 3 4
Photon energy (eV)
B6 ALUMINUM PHOSPHIDE (AlP) 155
AlP
Figure B6·4 a(E) spectrum for

AlP at 300 K.
101
~-=~-=~-=~~~~~~
2.0 2.2 2.4 2.6 2.8 3.0 3.2
Photon energy (eV)
Table B6·1 Optical constants oj ALP at 300 K.

eV EI E2 n k a (cm'l) R
0.5 7.568 2.751 0.218
1 7.583 2.754 0.218
1.1 7.598 2.756 0.219
1.2 7.620 2.760 0.219
1.3 7.652 2.766 0.220
1.4 7.694 2.774 0.221
1.5 7.754 2.785 0.222
1.6 7.825 2.797 0.224
1.7 7.906 2.812 0.226
1.8 7.993 2.827 0.228
1.9 8.095 2.845 0.230
2 8.210 2.865 0.233
2.1 8.330 2.886 0.236
2.2 8.454 0.00029 2.908 0.000049 1.1OE+01 0.238
2.3 8.599 0.00040 2.932 0.000069 1.60E+01 0.241
2.4 8.767 0.00058 2.961 0.00010 2.40E+01 0.245
2.5 8.936 0.0014 2.989 0.00023 5.80E+01 0.249
2.6 9.122 0.0030 3.020 0.00049 1.30E+02 0.253
2.7 9.331 0.0060 3.055 0.0010 2.70E+02 0.257
2.79 9.568 0.0103 3.093 0.0017 4.70E+02 0.262
2.8 0.0018 5.00E+02
2.9 0.0029 8.40E+02
3 0.0004 1.20E+02
3.1 0.0054 1.70E+03
87 ALUMINUM ARSENIDE
(AlAs)

Aluminum arsenide (AlAs) is of considerable interest from the standpoint of solid-
state devices, especially since its alloys with GaAs provide materials for high-speed
electron and optoelectronic devices [1]. There is also widespread use of AlAs, GaAs,
and AI..Gal ...As in the fabrication of III-V quantum structures [2]. A review of many
physical and semiconducting properties of these materials has been given in Refs.
[3-5].

Figure B7-1 shows the electronic energy-band structure of AlAs as calculated using
the semi-ab initio orthogonalized LCAO method by Huang and Ching [6]. Table
B7-1 summarizes the interband transition energies in AlAs determined experimen-
tally [3-5].
AlAs is known to be an indirect-band-gap semiconductor. Its indirect band gap is
...
Figure B7·1 Electronic energy-band

AlAs structure of AlAs as calculated using the
K,
semi-ab initio orthogonalized LCAD
method. (From Huang and Ching [6].) The
locations of several interband transitions
are included by the vertical arrows.
156
B7 ALUMINUM ARSENIDE (AlAs) 157
TABLE B7·1 Energies of the indirect gaps (EglD) and CPs in AlAs at 300 K.
E glD, CPs eV
EX
g 2.16-2.17
EL
g 2.35-2.40
Eo 2.9-3.14
Eo+t1o -3.2
El 3.6-3.9
El+t11 3.8-4.1
Eo' 4.5-4.7
E2 -4.9
2.16 eV [E/, f\s (r8)~XI (~)] at 300 K [3-5]. The second lowest indirect gap is
about 2.4 eV at 300 K [EgL , r lS (r8)~Ll (L6)]. The lowest direct absorption edge in
AlAs corresponds to transitions at the r point, Eo [rIS (r8)~rl (r6)] and Eo+t1a [rIS
(r7)~rl (r6)]' The experimental Eo and Eo+t1a energies at 300 K are -3.0 and 3.2 eV,
respectively. The El and EI+~I transitions in the zinc-blende crystals take place
along the A direction or at the L point. These energies in AlAs at 300 K are -3.8 and
4.0 eV, respectively (~-0.2 eV, Refs. [3-5]). An analysis of the interband-transition
line shapes revealed further CP, E 1', at 6.475-6.810 eV at 90 K [7].
The band structure shown in Fig. B7-1 suggests that the lowest conduction and
the top valence bands are almost parallel along t1. The energy separations r ls
(r8)~rIS (r7) (Eo') and Xs (X7)~XI (~) (E2) are thus almost equal, 4.48 and 4.75
eV, respectively [6]. Experimentally, these gaps are determined to be -4.6 eV (Eo')
and 4.9 e V (E2 ), respectively. The theoretical calculation also predicts the following
interband transition energies: Egx=2.37 eV, E gL=2.81 eV, Eo=2.79 eV, E1=3.69 eV,
and E1'=6.74 eV [6].

Although AlAs is one endpoint of the heavily studied AlxGal.xAs ternary system, its
optical properties have not been investigated nearly as much because of its hygro-
scopic nature [8]. This has necessitated some care in experiment often with a cap-
ping of GaAs layer (typically 20-100 A thick). Such a multilayer sample is more
complicated to analyze if one wishes to extract nand k (CI and ~) from reflection-
transmission or SE measurements (see, e.g., Ref. [9]).
The static and high-frequency dielectric constants of AlAs are reported to be
c,=10.06 and c~=8.16 [3-5]. Optical properties in the reststrahlen region of AlAs
have been studied by measuring IR reflectivity [10,11] or HREELS [12]. The AlAs
samples investigated were bulk polycrystalline films grown in an evacuated ampoule
by reaction of Al and As vapors [10] or epitaxial films grown on GaAs(lOO) sub-
strates by MBE [11,12]. A capping layer of 250 A of undoped GaAs was deposited
on an Si-doped AlAs layer (l flm thick) [11]. In the case of HREELS [12], no cap-
ping layer was grown: the top AlAs layer (95±5A thick) was grown on a GaAs buf-
fer layer (-111m thick) and then immediately transferred in the HREELS chamber.
The residual pressure in the HREELS chamber during the measurements was SxlO-11
mbar, allowing several hours of measurements without any contamination.
The room-temperature reststrahlen parameters determined from these studies
were: O)To=361.S cm-!, c,=lO.1, c~=S.2, and "(=S.O cm-! [11]; O)To=359 cm-!, c,=lO.16,
c~=8.16, and "(=3.2 cm-! [12]. Perkowitz et al. [11] determined such parameters not
only at room temperature but also at low temperatures (77 and 6 K). IIegems and
Pearson [10] reported the IR reflectivity spectrum of AlAs, but they did not attempt
to fit by an oscillator model due to poor sample quality. The RS spectrum can also
yield most of the parameters needed to calculate the IR spectrum. Onton [13] deter-
mined from RS data O)TQ=361.S cm-!, (cs-c~)=1.90, and "(=0.97 cm-!, and chose
c~=7.S. The only dramatic difference in these sets of parameters is in the values of Yo
the line width S.O cm-! [11] seems too large, while the line width 0.97 cm-! [13]
seems too small for typical semiconductors.
The refractive-index dispersion data in the transparent region of AlAs have been
measured by several authors [14-16]. Figure B7-2 shows the neE) data of AlAs
measured at 300 K by Monemar [14], Fern and Onton [15], and Grahn et al. [16].
Note that the experimental uncertainty of these measurements were ±O.15 [14],
±O.OOS [15], and ±O.21 [16], respectively. We can, thus, recognize that the data of
Fern and Onton [15] fall within those of Monemar [14]; however, the data of Grahn
et at. [16] are considerably smaller than these values. The solid line in Fig. B7-2
shows the theoretical fit of the MDF calculation to Fern-Onton's data [3-5].
4.0
AlAs 300 K
3.5 .
0
A
Monemar
Fern & Onton
Grahn et al.
o
o
-Calc. o
e::
3.0
A
A
2.5 0.5 1.0 1.5 2.0 2.5 3.0

PHOTON ENERGY (eV)
Figure B7·2 Refractive-index dispersion for AlAs at 300 K. The experimental data are ta-
ken from Monemar [14], Fern and Onton [15], and Grahn et al. [16]. The solid line shows
the theoretical fit of the MDF calculation to Fern-Onton's data [3-5].
Measurements on the temperature dependence of the long-wavelength (E=0.7 eV)

n of AlAs were reported by Grimeiss and Monemar [17] using an interference
method at T=5 to 300 K. The resulting values of n"l(dn/d1) varied from 0 (T=O K) to
(4.6±O.3)xlO"5 K"I (T=300 K). More recently, Talghader and Smith [18] have deter-
mined the value of n-l(dn/d1)=(1.63±O.07)xlO"" K"I for a wavelength near 1 11m and
T between 25 and IS0°C by measuring the temperature-dependent LO mode shift in
two vertical-cavity surface-emitting-Iaser-type optical resonators. Bardinal et al.
[19] have also demonstrated in situ measurements of the AlAs and GaAs n(E) dis-
persion at MBE epitaxial growth temperature (600°C) by dynamic optical reflecto-
metry using a tunable laser light source.
Optical absorption spectra at the fundamental absorption edge of AlAs have been
measured by a number of authors [20-3]. These measurements demonstrate the sen-
sitivity afforded optical absorption measurements in determining the lowest-
indirect- and lowest-direct-gap energies in pure or alloyed (AlxGal_xAs) samples.
Onton and Chicotka [24] observed, from optical absorption using the wavelength-
modulation technique, fine structures that could be interpreted in terms of indirect
transitions involving the energy- and momentum-conserving phonons. Such phonon-
related fine structures have also been identified in the PL excitation spectra [25].
The optical constants in the interband transition region of AlAs have been deter-
mined using SE by Garriga et al. [26] in the 1.7-S.6-eV spectral region, by
Herzinger et al. [9] in the 1.4-5.0-eV region, and by Weimar et al. [27] in the 3.0-
5.0-eV region at room temperature. The AlAs film of about 1 11m [26] or 20-300 A
thick [27] was grown by MBE, followed by a 20-A or a 100-A thick GaAs capping
layer. respectively. The measured e(E) spectra revealed several CP structures,
namely, Eo, EI , EI+LlI , Eo', Eo'+ilo', and E2 [26]. The lowest-direct-band-gap energy
Eo=3.0 eV was defined in a fit of the absorption coefficient ex vs. E, assuming a line
shape of a broadened 2D minimum [26]. We note, however, that these data are sig-
nificantly different from those of Yim [21], i.e., an order of magnitude different,
namely, k=6.4xlO-2 at 3.0 eV [26] while k=1.7xlO-3 at 3.0 eV [21], but are in reason-
able agreement with those reported by Pearah et al. [23].
The optical constants for thin strained layers of some III-V semiconductors, in-
cluding AlAs, have been investigated by SE and multi-sample analyses [28]. Ex situ
SE measurements were made at room temperature on multiple samples. This study
concludes that the apparent optical constants for such very thin layers can be depen-
dent on thickness and surrounding material, and are generally applicable only for
layers found in a similar structural context.
The optical constants as a function of temperature for AlAs have been measured
in the ranges 1.S-5.0 eV and 20-S77°C by Yao et al. [29] and in the ranges 1.24-S.0
eV and 25-6S0°C by Kuo et al. [30,31]. These measurements were carried out in
situ immediately after the MBE growth at elevated temperatures, inside a UHV
(MBE) chamber. An in situ normal-incidence reflectance technique has also been
developed to monitor the growth of AlAs, GaAs, and AlxGal_xAs thin films by
MOCVD [32] and MBE [33].
We list in Table B7-2 the room-temperature values of e=el+iEz, n*=n+ik, n, and R

for AlAs. A set of the optical constants for E~O.1 eV were calculated using the rest-
strahlen parameters of Guyaux et at. [12]. The n (e l) values below the fundamental
absorption edge (0.5~E~2.2 eV) were taken from Fern and Onton [15]. The n (Ez
and k) values near the E/ region (2.1~~2.9 eV) were taken from Yim [21]. A set
of the optical constants in the interband transition region (2.3~~5.6 e V) were taken
from Garriga et at. [26]. They obtained the pseudodielectric-function data of AlAs
between 1.7 and 5.6 eV by SE and presented them in graphical form with and
without correction for the possible existence of an oxide layer (assumed to be 6 A
thick) over the 20-A GaAs capping layer; their difference is relatively large, for ex-
ample, the Ez-peak values obtained are, respectively, 30.0 and 27.2 with and without
correction [26]. However, they did not have a reliable criterion for estimating the
thickness of this oxide overlayer, and therefore could not conclude which curves,
corrected or uncorrected ones, are a better approximation to the true dielectric func-
tion of AlAs. The numerical values listed in Table B7-2 are obtained from their un-
corrected dielectric-function data [26].
The (e l, Ez), (n, k), n, and R values in Table B7-2 are graphed in Figs. B7-3-B7-6,
E gX gap.
REFERENCES
1. See, for instance, High-Speed Semiconductor Devices, edited by S. M. Sze
(Wiley-Interscience, New York, 1990).
2. See, for instance, Ill-V Quantum System Research, edited by K. H. Ploog, lEE
Materials and Devices Series 11 (Peter Peregrinus, UK, 1995).
3. S. Adachi, f. Appt. Phys. 58, Rl (1985).
4. Properties of Aluminium Gallium Arsenide, EMIS Datareviews Series No.7,
edited by S. Adachi (INSPEC (lEE), London, 1993).
5. S. Adachi, GaAs and Related Materials: Bulk Semiconducting and Superlattice
Properties (World Scientific, Singapore, 1994).
6. M.-Z. Huang and W. Y. Ching, f. Phys. Chem. Solids 46, 977 (1985).
7. O. Gi.inther, C. Janowitz, G. Jungk, B. Jenichen, R. Hey, L. Daweritz, and K.
Ploog, Phys. Rev. B 52, 2599 (1995).
8. E. D. Palik, O. J. Glembocki, and K. Takarabe, in Handbook of Optical Con-
stants of Solids ll, edited by E. D. Palik (Academic, Orlando, 1991), p. 489.
9. C. M. Herzinger, H. Yao, P. G. Snyder, F. G. Celii, Y.-c. Kao, B. Johs, and J.
A. Woollam, f. Appl. Phys. 77, 4677 (1995).
10. M. Ilegems and G. L. Pearson, Phys. Rev. B 1, 1576 (1970).
11. S. Perkowitz, R. Sudharsanan, S. S. Yom, and T. 1. Drummond, Solid State
Commun. 62,645 (1987).
12. J. L. Guyaux, A. Degiovanni, P. A. Thiry, R. Sporken, and R. Caudano, Appl.

Surf Sci. 56-58, 697 (1992).
13. A. Onton, in Proc. 10th Int. Conf Phys. Semicond., Cambridge, Mass., 1970,
edited by S. P. Keller, J. C. Hensel, and F. Stem (U. S. Atomic Energy Com-
mission, Springfield, Va., 1970), p. 107.
14. B. Monemar, Solid State Commun. 8, 2121 (1970).
15. R. E. Fern and A. Onton, J. Appl. Phys. 42, 3499 (1971).
16. H. T. Grahn, D. A. Young, H. J. Maris, J. Tauc, J. M. Hong, and T. P. Smith,
III, Appl. Phys. Lett. 53,2023 (1988).
17. H. G. Grimmeiss and B. Monemar, Phys. Status Solidi AS, 109 (1971).
18. J. Talghader and J. S. Smith, Appl. Phys. Lett. 66,335(1995); erratum, ibid. 69,
2608 (1996).
19. V. Bardinal, R. Legros, and C. Fontaine, Appl. Phys. Lett. 67, 244 (1995).
20. M. R. Lorenz, R. Chikotka, G. D. Pettit, and P. J. Dean, Solid State Commun. 8,
693 (1970).
21. W. M. Yim, J. Appl. Phys. 42, 2854 (1971).
22. W. P. Dimke, M. R. Lorenz, and G. D. Pettit, Phys. Rev. B 5, 2978 (1972).
23. P. J. Pearah, W. T. Masselink, J. Klem, T. Henderson, H. Morko~, C. W. Litton,
and D. C. Reynolds, Phys. Rev. B 32, 3857 (1985).
24. A. Onton and R. J. Chikotka, Phys. Rev. B 10,591 (1974).
25. B. Monemar, Phys. Rev. B 8, 5711 (1973).
26. M. Garriga, P. Lautenschlager, M. Cardona, and K. Ploog, Solid State Commun.
61,157 (1987).
27. U. Weimar, J. Wagner, A. Gaymann, and K. Kohler, Appl. Phys. Lett. 68, 3293
(1996).
28. C. M. Herzinger, P. G. Snyder, F. G. Celii, Y.-C. Kao, D. Chow, B. Johs, and J.
A. Woollam, J. Appl. Phys. 79,2663 (1996).
29. H. Yao, P. G. Snyder, K. Stair, and T. Bird, Mat. Res. Soc. Symp. Proc. 242,
481 (1992).
30. c. H. Kuo, S. Anand, H. Fathollahnejad, R. Ramamurti, R. Droopad, and G. N.
Maracas, J. Vac. Sci. Technol. B 13,681 (1995).
31. G. N.Maracas, C. H. Kuo, S. Anand, R. Droopad, G. R. L. Sohie, and T. Levola,
J. Vac. Sci. Technol. A 13, 727 (1995).
32. W. G. Breiland and K. P. Killeen, Mat. Res. Soc. Symp. Proc. 324, 99 (1994).
33. W. G. Breiland and K. P. Killeen,J. Appl. Phys. 78, 6726 (1995).
30
AlAs
20
co 10
EX!
9
,,"
,,
o
-10
o 1 2 3 4 5 6
Photon energy (eV)
Figure B7·3 £1(E) and £2(E) spectra for AlAs at 300 K.
!!
E1+.6. 1
6 AlAs E1
Eo+.6. o
5
EO! !
~
4
c n
3
2
EgX! ./
1 , k
(X1000) .:
0 2 3 4 5 6
Photon energy (eV)
Figure B7·4 nee) and k(E) spectra for AlAs at 300 K.
107~~~~~~~~~~~
106 ClJTO
105
~ 104
I
~ 103
"-"
~ 102
101
AlAs
10°
1
10 10- 2 10-1 10°
Photon energy (eV)
Figure B7-5 aJ..E) spectrum for AlAs at 300 K.
0.8
E2
0.7 AlAs
El+Al !
Eo' !
!
0.6 El!
Eo+Ao
a: 0.5
Eo !
0.4 EX
9
!
0.3
!
0.20
1 2 3 4 5 6
Photon energy (eV)
Figure B7-6 R(E) spectrum for AlAs at 300 K.
Table B7·2 OpticaL constants of ALAs at 300 K.

eV £1 £2 n k a (cm' i ) R
0.01 10.27 0.0045 3.204 0.00070 7.lOE-Ol 0.275
0.D2 10.67 0.013 3.266 0.0019 3.94E+00 0.282
0.03 11.83 0.041 3.439 0.0059 1.80E+01 0.302
0.032 12.30 0.056 3.507 0.0079 2.57E+Ol 0.309
0.034 12.96 0.079 3.601 0.011 3.80E+01 0.320
0.036 13.95 0.122 3.735 0.016 5.96E+Ol 0.334
0.038 15.54 0.210 3.942 0.027 1.02E+02 0.354
0.04 18.56 0.438 4.309 0.051 2.06E+02 0.388
0.042 26.38 1.418 5.138 0.138 5.88E+02 0.455
0.043 37.86 3.902 6.161 0.317 1.38E+03 0.520
0.0435 51.54 8.606 7.204 0.597 2.63E+03 0.574
0.04375 64.20 14.87 8.065 0.922 4.09E+03 0.611
0.044 85.63 30.97 9.399 1.648 7.35E+03 0.661
0.04425 117.3 87.87 11.49 3.825 1.72E+04 0.731
0.0444 96.18 179.6 12.25 7.332 3.30E+04 0.786
0.0445 5.994 222.2 10.68 10.40 4.69E+04 0.825
0.0446 -81.43 176.2 7.505 11.74 5.31E+04 0.857
0.0447 -102.4 109.9 4.889 11.24 5.09E+04 0.879
0.0448 -93.64 67.74 3.311 10.23 4.65E+04 0.892
0.0449 -79.98 44.10 2.383 9.255 4.2IE+04 0.902
0.045 -67.77 30.46 1.807 8.428 3.85E+04 0.908
0.04525 -46.57 14.70 1.064 6.907 3.17E+04 0.918
0.0455 -34.03 8.526 0.725 5.879 2.7IE+04 0.923
0.046 -20.45 3.878 0.427 4.542 2. 12E+04 0.925
0.047 -9.023 1.413 0.234 3.013 1.44E+04 0.912
0.048 -4.023 0.723 0.180 2.014 9.80E+03 0.868
0.049 -1.228 0.438 0.195 1.125 5.59E+03 0.711
0.05 0.554 0.293 0.769 0.191 9.66E+02 0.028
0.051 1.789 0.210 1.340 0.Q78 4.04E+02 0.022
0.052 2.694 0.157 1.642 0.048 2.52E+02 0.059
0.054 3.931 0.098 1.983 0.025 1.35E+02 0.109
0.056 4.735 0.066 2.176 0.015 8.67E+01 0.137
0.058 5.299 0.048 2.302 0.010 6.13E+Ol 0.155
0.06 5.716 0.036 2.391 0.0076 4.6IE+01 0.168
0.Q7 6.804 0.013 2.608 0.0025 1.77E+Ol 0.199
0.08 7.264 0.0065 2.695 0.0012 9.77E+00 0.210
0.09 7.513 0.0038 2.741 0.00070 6.34E+00 0.217
0.1 7.666 0.0025 2.769 0.00045 4.5IE+00 0.220
0.5 8.243 2.871 0.234
0.6 8.277 2.877 0.234
0.7 8.323 2.885 0.235
0.8 8.369 2.893 0.236
0.9 8.427 2.903 0.238
1 8.497 2.915 0.239
1.1 8.573 2.928 0.241
1.2 8.655 2.942 0.243
1.3 8.750 2.958 0.245
1.4 8.851 2.975 0.247
1.5 8.964 2.994 0.249
1.6 9.090 3.015 0.252
Table B7·2 Continued (AlAs).

eV 10 1 10 2 n k (l (em'l) R
1.7 9.236 3.039 0.255
1.8 9.388 3.064 0.258
1.9 9.560 3.092 0.261
2 9.753 3.123 0.265
2.1 9.960 0.000019 3.156 0.0000031 6.50E-01 0.269
2.2 10.20 0.00029 3.193 0.000046 1.02E+01 0.274
2.3 10.55 0.0018 3.248 0.00027 6.40E+01 0.280
2.4 11.00 0.0046 3.317 0.00069 1.69E+02 0.288
2.5 11.40 0.0083 3.376 0.00124 3. 13E+02 0.295
2.6 11.85 0.0104 3.442 0.00152 4.00E+02 0.302
2.7 12.30 0.0109 3.507 0.00155 4.24E+02 0.309
2.8 12.90 0.0115 3.592 0.0016 4.54E+02 0.319
2.9 13.60 0.081 3.688 0.011 3.23E+03 0.329
3 14.10 0.481 3.756 0.064 1.95E+04 0.336
3.1 14.15 0.858 3.763 0.114 3.58E+04 0.337
3.2 15.10 1.198 3.889 0.154 5.00E+04 0.350
3.3 16.75 1.952 4.100 0.238 7.96E+04 0.371
3.4 18.40 3.100 4.305 0.360 1.24E+05 0.391
3.5 19.80 4.396 4.477 0.491 1.74E+05 0.408
3.6 21.50 6.546 4.689 0.698 2.55E+05 0.429
3.7 23.65 9.498 4.957 0.958 3.59E+05 0.455
3.8 25.45 14.50 5.232 1.386 5.34E+05 0.487
3.9 22.50 22.01 5.195 2.118 8.37E+05 0.515
4 14.76 24.50 4.656 2.631 1.07E+06 0.521
4.1 10.01 24.00 4.243 2.828 1.18E+06 0.522
4.2 7.753 21.70 3.924 2.765 1.18E+06 0.508
4.3 7.449 20.35 3.816 2.667 1.16E+06 0.496
4.4 7.451 20.40 3.819 2.671 1.19E+06 0.497
4.5 7.445 21.75 3.901 2.788 1.27E+06 0.509
4.6 4.603 25.10 3.881 3.234 1.51E+06 0.547
4.7 -1.498 27.20 3.588 3.791 1.81E+06 0.595
4.8 -5.996 24.70 3.116 3.963 1.93E+06 0.618
4.9 -9.200 20.36 2.563 3.971 1.97E+06 0.640
5 -9.500 16.75 2.209 3.792 1.92E+06 0.642
5.1 -9.501 13.80 1.904 3.623 1.87E+06 0.647
5.2 -9.096 11.10 1.621 3.424 1.81E+06 0.651
5.3 -8.499 9.002 1.393 3.231 1.74E+06 0.655
5.4 -7.101 7.498 1.270 2.952 1.62E+06 0.634
5.5 -6.001 6.902 1.254 2.752 1.53E+06 0.604
5.6 -5.051 6.499 1.261 2.577 1.46E+06 0.571
B8 ALUMINUM ANTIMONIDE
(AISb)
BS.l GENERAL REMARKS

Aluminum antimonide (AlSb) is a zinc-blende-type semiconductor with an indirect
gap of -1.6 eV at room temperature [1]. AlSb is one of the less studied III-V com-
pound semiconductors. This is due to its unfavorable chemical behavior and diffi-
culties in bulk. crystal growth. However, the interest in this material has considerably
increased in recent years due to its physical and technological importance in con-
nection with GaSb/AlSb superlattices [2]. Its related alloys, such as Al.,Ga1_xSb and
Al.,Ga1...AsySbl_Y' are also promising materials for many optoelectronic devices in the
near-IR spectral region (see Refs. [3,4]).
BS.2 ELECTRONIC ENERGY·BAND STRUCTURE

Figure B8-1 shows the electronic energy-band structure of AlSb as calculated using
the semi-ab initio orthogonalized LCAO method by Huang and Ching [5]. Table
B8-1lists the interband transition energies in A1Sb determined experimentally [6-8].
Figure 88·1 Electronic energy-band

structure of AlSb as calculated using the
L, semi-ab initio orthogonalized LCAD
AISb
X, K, method. (From Huang and Ching [5].)
The locations of several interband tran-
-10 sitions are included by the vertical ar-
rows_
-15,L..----:-_-=-_-:-_+.----+._-=-_~
l AT A K E r
166
B8 ALUMINUM ANTIMONIDE (AlSb) 167
TABLE B8·1 Energies o/the indirect gaps (E/D) and CPs in A1Sb at 300 K.
EglD, CPs eV
EX 1.61
B
EL 1.63-2.21
B
Eo 2.27
Eo+80 2.99
EI 2.84
E I+81 3.23
Eo' 3.70
E2 4.05
EI' 5.25
There are two indirect band gaps below the lowest r gap, Eo. The lowest one, r ls
(rs)-+xI (X6), occurs at 1.61 eV at 300 K; the next one is from rlS (rs) to LI (LJ
and occurs at around 2 eV [6]. The direct r transitions are observed to occur at ener·
gies -2.3 eV [Eo, r ls (rs)-+rl (rJ] and -3.0 eV [Eo+.1o, r ls (r7)-+rl (rJ], respec-
tively [8]. The E I , EI+AI , and EI' transitions in AlSb may occur along the <111>
directions (A) or at the L point in the BZ and are observed at energies -2.8 eV (E I ),
-3.2 eV (EI+A I), and -5.3 eV (E I '), respectively. The Eo' and E2 gaps are also found
to occur at energies -3.7 and 4.1 eV, respectively [8].
Theoretically [5], the lowest-indirect-gap energy is 1.94 eV (EgL , rls-+L I), while
the second one is 2.08 eV [EgX, r ls (rs)-+X I (XJ]. The direct r-gap energies are
2.79 eV (Eo, r ls -+rl) and 4.48 eV (Eo', r l5 -+rls), while those at the L and X points
are 3.69 eV (E I , ~ -+LI), 6.74 eV (E I ', ~ -+~), and 4.39 eV (Ez, Xs -+XI).

IR lattice reflection spectra of AlSb were measured by Hass and Henvis [9] and
Turner and Reese [10]. Turner and Reese [10] also measured one- and multiphonon
IR absorption bands at 300 and 77 K. The samples used by them [10] were cut and
optically polished to thicknesses between 4 and 750 Jlm. This wide range of thick-
ness was necessary because of the large range of absorption coefficients which were
measured (10"1_105 cm"I). The 300-K reststrahlen parameters determined from these
studies were: coTQ=318±8 cm"1, £.=12.04, £_=10.24, and r=6.4 cm"1 [9]; coTQ=319.1
cm"l, £.=11.21, £_=9.88±0.2, and r=1.9 cm"1 [10].
Optical absorption spectra were measured in the wavelength range between 0.6
and 8 Jlm at 14, 85, and 300 K by Blunt et al. [11] and in the range between 0.7 and
38 Jlm at 78 and 300 K by Turner and Reese [12]. They identified free-carrier ab-
sorption (UocA?) and lattice absorption bands at wavelengths greater than 8 Jlm [12].
The D-type interconduction-band absorption peaking at 1..-4 Jlm was found in n-
AISb (n=4xI0 16-4xlO 17 cm"3) [12,13]. The intervalence-band absorption peaking at
E-0.75 eV (1..-1.65 11m) was also identified inp-AISb (p-4.5xI0 16 cm"3) [14].
168 III-V BINARY SEMICONDUcrORS
The wavelength-derivative transmission spectra of AISb were measured at 4.2 and

77 K by Sirota and Lukomskii [1S]. The measured spectra showed free-exciton
peaks accompanied by the emission of LA, T A, LO, and TO phonons. However, no
detailed data on the absorption coefficients in the conventional (nonderivative) form
have been reported so far at the fundamental absorption edge of AISb.
The refractive-index dispersion in the transparent region of AlSb has been meas-
ured by several authors [4,16]. Bulk AISb(tOO) single crystals used by Alibert et al.
[4] were grown by solute diffusion method from Sb-rich liquid solution at low tem-
perature (-700°C). After lapping, the samples were mechanically polished with 0.1-
Ilm alumina powder under methanol, chemomechanically etched with 4% Br in
methanol, rinsed in ethanol, blown dry with pure nitrogen gas, and finally stocked in
a dry atmosphere. The n(E) data were obtained based on an accurate measurement of
the reflection of p-polarlzed light as a function of the incident angle and by fitting
the reflectance data to a calculated one. The accuracy of this measurement was esti-
mated to be within ±D.OOS.
The fundamental reflectivity in the interband transition region of AlSb has been
measuled by Fischer [17]. Because chemically polished surfaces of AlSb react rap-
idly with water in the air, optical measurements of this material are extremely diffi-
cult. He measured the reflectivity spectrum on (1 to) surfaces of p-AlSb (p=2xl0 17
cm-3) cleaved in an UHY of less than to-8 Torr. The spectrum taken at 300 K showed
CP-related peaks at -2.8,3.2,4.3, and S.4 eY.
SE study on AISb has been carried out by Zollner et al. [7]. They developed a
polishing method to obtain AlSb surfaces of high quality, which should be useful for
the preparation of surfaces for optical measurements as well as of substrates for
epitaxial growth on AISb. They measured the SE data on a best-prepared sample in
the 1.4-S.8-eY spectral region in a flow of dry N2 gas and presented in tabular form
the SE data corrected for a O.3-nm-thick GaSb oxide overlayer. (The GaSb oxide
data in Ref. [18] were used, as no information on the optical constants of AlSb na-
tive oxide is available.) Optical absorption in the vacuum-UY region (4S-12S eY)
has been studied by Cardona et al. [19]. The measured spectrum showed a broad
peak at -80 eY.
The optical constants for thin strained layers of some III-Y semiconductors, in-
cluding AISb, have been investigated by SE and multi-sample analyses [20]. It is
concluded that the apparent optical constants for such very thin layers can be depen-
dent on thickness and surrounding material, and are generally applicable only for
layers found in a similar structural context.
Table B8-2lists the room-temperature values of £=£I+iEz, n*=n+ik, a, and R for
AISb. A complete set of the optical constants for E~.3 eY were calculated from the
reststrahlen data of Turner and Reese [to]. The £1 and n below the fundamental ab-
sorption edge (0.6:Q;~1.4 eV) were taken from Alibert et al. [4]. The optical-
constant data in the interband transition region (l.S~~S.8 eY) were taken from
Zollner et al. [7]. The optical absorption data, k and a, for D-SO eY were taken from
Cardona et al. [19].
The (£1' ~), (n, k), a, and R values in Table B8-2 are graphed in Figs. B8-2-BS-5,
E gX gap. It has been shown [S] that such optical-constant spectra can be successfully
explained by the MDF.
REFERENCES
2. G. P. Schwartz, G. J. Gualtieri, W. A. Sunder, and L. A. Farrow, Phys. Rev. B
36,4868 (1987).
3. A. Joullie, B. Girault, A. M. Joullie, and A. Zien-Eddine, Phys. Rev. B 25, 7830
(1982).
4. <;. Alibert, M. Skouri, A. Joullie, M. Benouna, and S. Sadiq, J. Appl. Phys. 69,
3208 (1991).
5. M.-Z. Huang and W. Y. Ching, J. Phys. Chem. Solids 46, 977 (1985).
6. K. Strossner, S. Ves, C. K. Kim, and M. Cardona, Phys. Rev. B 33, 4044
(1986).
7. S. Zollner, C. Lin, E. SchOnherr, A. Bohringer, and M. Cardona, J. Appl. Phys.
66,383 (1989).
8. S. Adachi, J. Appl. Phys. 67,6427 (1990).
9. M. Hass and B. W. Henvis, J. Phys. Chem. Solids 23, 1099 (1962).
10 W. J. Turner and W. E. Reese, Phys. Rev. 127, 126 (1962).
11. R. F. Blunt, H. P. R. Frederikse, J. H. Becker, and W. R. Hosler, Phys. Rev. 96,
578 (1954).
12. W. J. Turner and W. E. Reese, Phys. Rev. 117, 1003 (1960).
13. E. Haga and H; Kimura, J. Phys. Soc. Jpn 19, 1596 (1964).
14. R. Braunstein and E. O. Kane, J. Phys. Chem. Solids 23,1423 (1962).
15. N. N. Sirota and A. I. Lukomskii, Sov. Phys.-Semicond. 7, 140 (1973).
16. F. Oswald and R. Schade, Z. Naturf. A 9, 611 (1954).
17. T. E. Fischer, Phys. Rev. 139, A1228 (1965).
IS. D. E. Aspnes, B. Schwartz, A. A. Studna, L. Derick, and L. A. Koszi, J. Appl.
Phys. 48, 3510 (1977).
19. M. Cardona, W. Gudat, B. Sonntag, and P. Y. Yu, in Proc.l0th Int. Conf. Phys.
Stem (U. S. Atomic Energy Commission, Springfield, Va., 1970), p. 209.
A. Woollam, J. Appl. Phys. 79,2663 (1996).
35
30
25
20
15
'" 10
5
0
-5
-10
-150 1 2 3 4 5 6
Photon energy (eV)
Figure BS-2 £1 (E) and e,.(E) spectra for AlSb at 300 K.
B8 ALUMlNUM ANTIMONIDE (AlSb) 171
107
106 WTO
105 EX
9
'I 104 1
E
(..)
-; 103
102
AISb
101
10-1 10° 10 1 102

Photon energy (eV)
Figure BS-4 oJ..E) spectrum for AlSb at 300 K.
Table BS-2 Optical constants of AISb at 300 K.

eV 10 1 102 n k a (cm· l ) R
0.01 11.30 0.0023 3.362 0.00034 3.45E-01 0.293
0.02 11.67 0.0072 3.416 0.0011 2. 15E+00 0.299
0.03 13.01 0.033 3.607 0.0046 1.40E+01 0.320
0.0325 13.97 0.062 3.738 0.0082 2.72E+01 0.334
0.035 16.01 0.149 4.001 0.019 6.60E+01 0.360
0.036 17.62 0.245 4.198 0.029 1.06E+02 0.379
0.037 20.51 0.474 4.529 0.052 1.96E+02 0.407
0.038 27.07 1.278 5.204 0.123 4.73E+02 0.459
0.0385 34.90 2.762 5.913 0.234 9.12E+02 0.506
0.039 55.77 9.713 7.496 0.648 2.56E+03 0.587
0.0391 64.68 14.18 8.090 0.876 3.47E+03 0.612
0.0392 77.38 22.45 8.887 1.263 5.02E+03 0.642
0.0393 95.82 39.96 9.991 2.000 7.97E+03 0.680
0.0394 118.3 83.59 11.47 3.644 1.46E+04 0.728
0.0395 93.04 186.6 12.28 7.598 3.04E+04 0.790
0.03955 14.52 223.3 10.92 10.23 4.lOE+04 0.823
0.0396 -67.55 191.8 8.241 11.64 4.67E+04 0.851
0.0397 -98.66 86.78 4.046 10.73 4.32E+04 0.885
0.0398 -76.39 41.17 2.279 9.033 3.64E+04 0.901
0.0399 -57.65 22.98 1.485 7.736 3. 13E+04 0.910
0.04 -44.74 14.45 1.067 6.773 2.75E+04 0.915
0.0405 -17.12 3.395 0.408 4.158 1.71E+04 0.915
0.041 -7.842 1.468 0.261 2.813 1.17E+04 0.890
0.0415 -3.251 0.813 0.224 1.817 7.64E+03 0.813
0.042 -0.518 0.515 0.326 0.790 3.37E+03 0.453
0.043 2.579 0.260 1.608 0.081 3.52E+02 0.055
0.044 4.285 0.156 2.070 0.038 1.68E+02 0.122
0.045 5.365 0.104 2.316 0.022 1.02E+02 0.158
0.0475 6.873 0.049 2.622 0.0093 4.46E+01 0.201
0.05 7.656 0.028 2.767 0.0051 2.56E+01 0.220
0.06 8.858 0.0071 2.976 0.0012 7.25E+00 0.247
0.07 9.256 0.0031 3.042 0.00051 3.60E+00 0.255
0.08 9.450 0.0017 3.074 0.00027 2.2IE+00 0.259
0.09 9.562 0.0010 3.092 0.00017 1.52E+00 0.261
0.1 9.633 0.00069 3.104 0.00011 1.12E+00 0.263
0.2 9.826 0.000066 3.135 0.000011 2.15E-01 0.267
0.3 9.856 0.000019 3.140 0.0000030 9.10E-02 0.267
0.6 9.967 3.157 0.269
0.7 10.09 3.176 0.272
0.8 10.23 3.198 0.274
0.9 10.40 3.225 0.277
1.0 10.60 3.255 0.281
1.1 10.82 3.289 0.285
1.2 11.08 3.329 0.289
1.3 11.42 3.380 0.295
1.4 11.85 3.442 0.302
1.5 12.56 0.001 3.54 0.00014 2.15E+01 0.313
1.6 12.91 0.002 3.59 0.0003 4.5IE+01 0.319
1.7 13.30 0.007 3.65 0.001 1.65E+02 0.324
1.8 13.93 0.015 3.73 0.002 3.67E+02 0.333
Table B8-2 Continued (AlSb).

eV 10 1 10 2 n k a (cm·1) R
1.9 14.53 0.02 3.81 0.003 5.0SE+02 0.341
2 1S.24 0.03 3.90 0.004 7.79E+02 0.3S1
2.1 16.08 O.OS 4.01 0.006 1.33E+03 0.361
2.2 17.S4 0.08 4.19 0.01 2. 13E+03 0.378
2.3 18.50 2.11 4.31 0.24 S.71E+04 0.390
2.4 19.62 2.99 4.44 0.34 8. 19E+04 0.402
2.5 20.97 4.25 4.60 0.46 1.17E+OS 0.417
2.6 22.76 6.09 4.81 0.63 1.67E+OS 0.437
2.7 24.98 9.3S S.08 0.92 2.S2E+OS 0.463
2.8 25.30 16.70 S.27 1.S8 4.49E+OS 0.496
2.9 17.41 19.19 4.6S 2.06 6.06E+OS 0.486
3 16.54 17.82 4.S2 1.97 6.00E+OS 0.474
3.1 16.30 19.43 4.56 2.13 6.69E+OS 0.486
3.2 14.24 22.3S 4.S1 2.48 8.03E+OS 0.S06
3.3 9.91 22.32 4.14 2.69 9.01E+OS 0.S08
3.4 8.77 21.00 3.97 2.64 9. 12E+OS 0.499
3.S 8.31 21.33 3.9S 2.70 9.S8E+OS 0.S03
3.6 7.72 22.32 3.96 2.82 1.03E+06 0.513
3.7 6.63 23.35 3.93 2.97 l.l1E+06 0.525
3.8 4.53 24.12 3.81 3.16 1.22E+06 0.540
3.9 2.16 25.22 3.71 3.40 1.3SE+06 0.S60
4 -1.S6 26.00 3.S0 3.72 1.5IE+06 0.589
4.1 -6.14 2S.24 3.15 4.01 1.67E+06 0.621
4.2 -11.16 21.99 2.60 4.23 1.80E+06 0.663
4.3 -12.73 lS.94 1.96 4.07 1.77E+06 0.691
4.4 -11.20 11.81 1.59 3.71 1.6SE+06 0.689
4.5 -9.41 9.81 I.4S 3.39 1.55E+06 0.669
4.6 -8.11 8.71 1.38 3.16 1.48E+06 0.648
4.7 -7.17 7.97 1.33 2.99 1.43E+06 0.630
4.8 -6.40 7.42 1.30 2.85 1.38E+06 0.611
4.9 -S.76 7.06 1.29 2.73 1.35E+06 0.S92
5 -5.29 6.85 1.30 2.64 1.34E+06 0.576
5.1 -5.00 6.77 1.31 2.59 1.34E+06 0.565
5.2 -4.95 6.74 1.31 2.58 1.36E+06 0.564
S.3 -S.lS 6.53 1.26 2.59 1.39E+06 0.S75
5.4 -5.30 6.02 1.17 2.58 1.4IE+06 0.589
5.S -S.18 5.51 1.09 2.52 1.4IE+06 0.594
5.6 -S.OO 5.12 1.04 2.47 1.40E+06 0.594
5.7 -4.84 4.88 1.01 2.42 1.40E+06 0.592
5.8 -4.81 4.78 0.99 2.41 1.42E+06 0.S93
SO 0.027 1.38E+05
S5 0.033 1.85E+OS
60 0.037 2.28E+05
65 0.040 2.63E+05
70 0.041 2.94E+05
7S 0.042 3.22E+OS
80 0.041 3.33E+05
85 0.039 3.32E+05
90 0.034 3.13E+05
95 0.028 2.73E+OS
Table B8·2 Continued (AISb).

eV n k R
100 0.022 2.2SE+05
lOS 0.016 1.70E+OS
110 0.012 1.32E+OS
l1S 0.0090 1.0SE+OS
120 0.0068 8.2SE+04
125 0.004S 5.65E+04
89 WURTZITE GALLIUM NITRIDE
(a-GaN)

GaN-based III-V nitride semiconductors currently attract extensive attention for
their potential electronic and optoelectronic device applications, such as blue-UV
light-emitting diodes and laser diodes [1,2]. GaN films have been grown with a wide
range of growth techniques, including CVD, MOCVD, and MBE. A variety of sub-
strates, such as Si, SiC, and various crystallographic orientations of sapphire, have
been used in these studies. Although there have been many reports on the optical
properties and constants of wurtzite GaN (a-GaN), the current state of the available
data is seemed to be less than adequate. In particular, the optical constants with re-
spect to its optical anisotropy are incomplete.

Figure B9-1 shows the electronic energy-band structure of a-GaN as calculated with
the EPM by Bloom et al. [3]. a-GaN has a direct band gap (r6~rl) of around 3.4
eV at room temperature [4]. The conduction- and valence-band structures at the r
point of wurtzite crystals have been shown schematically in Fig. 1.14. The crystal
field parameter ~r and SO parameter Aso for GaN determined by Dingle et al. [5] are
22 meV and 11 meV, respectively, while those reported more recently by Korona et
al. [6] are 9.3±O.3 meV and 19.7±1.5 meV, respectively.
The experimental reflectivity spectra [3,7,8] revealed the presence of CP struc-
tures at -7,8,9,14, and 23 eV. Lambrecht et al. [8] performed a combined theoreti-
cal and experimental study of the a-GaN reflectivity. The measurements confirmed
the previous results of Bloom et al. [3] and Olson et al. [7]. The transitions from the
upper N 2p-like valence bands are found to occur in the range 3.5-15 eV. Most of
the peaks in the reflectivity spectrum are related to several band-to-band transition
curves rather than a single dominant one. Their CP analysis and energy-band struc-
ture are, however, rather different from those given by Bloom et al. [3]. The UV
reflectivity study of Bloom et al. [3] was limited up to -10 eV, while that of Lame
brecht et al. [8] was in the range 0-30 eV.
Logothetidis and coworkers [9-11] reported SE e(E) data of a-GaN with El..c in
the region up to 10 eV. The dominant structures are located around 7 and 8 eV,
whereas a secondary weak structure is evident at above 9 eV. The <111> direction in
the BZ of the zinc-blende structure can be mapped along the c axis (r-A-A) of the
175
~A~~~~~~~~r~d~A~~--~H~p~K~~~r
k
Figure B9·1 Electronic energy-band structure of a-GaN as calculated with the EPM. (From
Bloom et at. [3].) The locations of several interband transitions are included by the vertical
arrows.
wurtzite BZ, as well as along three other directions perpendicular to c, which can be
pushed by symmetry requirements down the basal (r-L.-M) or top (A-R-L) plane
of the BZ. Therefore, the El gap, which is by definition associated with transitions in
the <111> direction, is split in wurtzite materials into two (e.g., CdS, see Ref. [12])
or more distinct peaks (e.g., CdSe, see Refs. [13,14]) for E.lc polarization. In view
of this, the CP structures at -7 and 8 eV are concluded to be due to the El gap [9]. If
E II c then the El gap will be reduced to a single peak, as observed in CdS [12] and
CdSe [13,14].

Optical properties of a-GaN in the reststrahlen region have been studied by several
authors [15-19]. Manchon et al. [15] made first-order RS and IR reflectivity meas-
urements on GaN single crystals prepared by heating GaN powder in ammonia
(1150-1200°C). They reported the static and high-frequency dielectric constants to
be e,=12±2 and e~=5.8 for both E.lc and E II c. Barker and Ilegems [16] made IR
reflectivity and absorption measurements on single-crystal epitaxial GaN on (0001)
sapphire substrates. The static and high-frequency dielectric constants determined
by these authors are e,=9.5±3% and e~=5.35 (E.lc). More recently, Sobotta et al.
[17] have made IR reflectivity measurements on epitaxial GaN layers. The GaN
films were deposited by CVD on (0112) sapphire substrates, since the resulting
B9 WURTZITE GALLIUM NITRIDE (a-GaN) 177
(1120) -oriented GaN epitaxial layers contain the hexagonal c axis in the plane of
the films. This crystallographic orientation of the layers enabled to measure the IR
spectra exactly for both El.c and E II c polarizations. The static and high-frequency
dielectric constants obtained from this study are £,=8.9±O.3, £~=5.2±O.1 for El.c and
£,=9.8±O.3, £~=5.2±O.1 for E II c. Using the polarized RS data and Lyddane-Sachs-
Teller relation, Azuhata et al. [20] estimated the static dielectric constant of a-GaN
to be 9.28 and 10.1 for El.c and E II c, respectively.
The n(E) dispersion in the transparent region of a-GaN has been determined by a
number of groups [21-8]. The GaN single crystals used were bulk plane-parallel
platelets [21,22] or epitaxial films grown on (0001) sapphire substrates [23-8]. The
n(E) data obtained correspond to those for El.c. Ejder [21], Zhang et al. [25], and
Yu et al. [28] also measured the data for the extraordinary ray (E I c). We plot in
Fig. B9-2 the n(E) data for El.c measured by Ejder [21], Perlin et al. [22], Lin et al.
[23], and Zhang et al. [25]. One can understand from the figure that the data of Per-
lin et al. [22] are considerably larger than those reported by others. The second-
order nonlinear optical coefficients, d33 , d31 , and diS' in GaN epitaxial film have also
been investigated by the standard Maker fringe of an anisotropic medium [25].
Optical absorption studies at the fundamental absorption edge of a-GaN have
been made by a number of authors [5,24,29-41]. These studies demonstrate the sen-
sitivity afforded optical absorption measurements in determining the band-edge en-
ergy in pure, doped, or alloyed samples. However, the observed positions of the ab-
sorption edge varied for different samples of GaN. The Burstein-Moss shift may be
one of the origins of this difference [37].
2.8 0 Ejder
to. Perlin et a!.
• Lin et a!.
Zhang et a!.
2.6
Elc
c
2.4
a-GaN
2. 2 '---1~--'--2:!:----'-----'3:!:----'------'4'
Photon energy (eV)
Figure B9-2 Refractive-index dispersion for a-GaN with El.c at 300 K. The experimental
data are taken from Ejder [21], Perlin et at. [22], Lin et at. [23], and Zhang et at. [25].
The UV reflectivity spectra of a-GaN have been measured in the I0-30-eV re-
gion (not E.lc, but a mixture of the reflectivities for E.lc and E II c) by Olson et al.
[7] and 0-30-eV region (E.lc) by Lambrecht et al. [8]. These authors performed the
KK analysis to get the complex dielectric function and its related constants. Note
that the £(E) data of Lambrecht et al. [8] give a peak height of ~-6 at E-7 eV. This
value is much smaller than that obtained from SE study (~-9.6, Ref. [42]).
The SE £(E) spectra for a-GaN (E.lc) have been measured by Yu et al. [27] in the
spectral range up to 5 eV, by Logothetidis et al. [9-11] up to 10 eV, by Kawashima
et al. [42] and Edwards et al. [43] up to 6 eV, Yao et al. [44] up to 5.5 eV, by Weth-
kamp et al. [45] up to 25 eV, and by Yang et al. [46] up to 3.8 eV. The GaN samples
used in these studies were epitaxially grown on (0001) sapphire [9-11,27,42,44-6]
and 6H-SiC(0001)si substrates [43]. Because of the limited experimental photon-
energy range, the measured SE spectra of Yu et al. [27], Edwards et al. [43], Kawa-
shima et al. [42], Yao et al. [44], and Yang et al. [46] showed only one CP structure
arising from the lowest-direct-gap edge (Es-3.4 eV). On the other hand, the SE
spectra of Logothetidis et al. [9-11] and Wethkamp et al. [45] revealed, at least,
four CP structures at energies -3.4 (Es)' 7, 8, and 9 eV. Measurements in the tem-
perature range from 80 to 650 K provided the temperature-dependent CP parameters
of these CPs. Our Bruggeman EMA-LRA analysis [42], however, suggested that the
sample of Logothetidis et al. may have a large number of void networks in the film
medium.
Table B9-1 lists the room-temperature values of f.=£I+i~, n*=n+ik, a, and R for
a-GaN with E.lc. A complete set of the optical constants for ESO.5 eV were calcu-
lated using the reststrahlen parameters of Sobotta et al. [17]. The optical constants
for 1.3SES3.3 eV were taken from Ejder [21] and those for D-3.35 eV were from
Logothetidis and coworkers [9-11]. Note that Logothetidis' data were listed after
mathematically removing the effects of surface roughness (fv=29%, d=178 A, see
Ref. [42]).
Table B9-2 lists the room-temperature values of f.=£I+i~, n*=n+ik, a, and R for
a-GaN with E I c. They were taken from Sobotta et al. (ESO.5 eV) [17] and from
Zhang et al. (1.2SES2.7) [25]. Camphausen and Connell [32] reported optical ab-
sorption coefficients for E I c only in the limited photon-energy range, 3.4SES3.5
eV. Dingle et al. [31] studied the low-temperature (T=2 K) reflectivity near the fun-
damental absorption edge for both E.lc and E I c polarizations. Ejder [21] also
studied the refractive-index dispersion for E.lc and E II c, and found that the differ-
ence in the refractive indices between these polarizations is I.5±O.2% at 1..=0.5 J.lm.
Unfortunately, however, he gave no further information about the n(E) dispersion
for Ell c.
The (£1' ~), (n, k), a, and R values in Tables B9-1 and B9-2 are plotted in Figs.
B9-3-B9-6, respectively. The solid and dashed lines represent the data for E.lc and
E II c, respectively. It has been shown [42,47] that such optical-constant spectra can
be successfully explained by the MDF.
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150~~~~~12~--~~~~~~
-Ele
----- Ell e 10 ex-GaN
100 l
.'""" 8
{~
6
50 .~
E 1"
:' 4
" "
2
o
-50L-~~~~~_2~__~~~~~~~
10-1 10° 2 4 6 10 1
Photon energy (eV)
Figure B9-3 fleE) and f 2(E) spectra for a-GaN at 300 K.
12
Ele
10 Elle
8 2
..x::
~ 6 ex-GaN
c
1
2
O~~~~~~ O~--~~~~~~
10-1 10° 2 4 6 10 1
Photon energy (eV)
Figure B9-4 neE) and k(E) spectra for a-GaN at 300 K.
Ele
Elle
a-GaN
,,
100~~~~~~ ~~--~~~~~~
10-2 10-1 100 4 6 8 10 1
Photon energy (eV)
Figure B9·5 al..E) spectrum for a-GaN at 300 K.
1.0 0.4
0.9
0.8 0.35
a-GaN
0.7
0.6 0.3
a: 0.5
0.4 0.25
0.3 --
0.2
-Ele
0.1 ----- Ell e
0.0
10-1
Photon energy (eV)
Figure B9·6 R(E) spectrum for a-GaN at 300 K.
Table B9·1 Optical constants of a-GaN for E.lc at 300 K.

eV El E2 n k a (cm· 1) R
0.01 8.977 0.021 2.996 0.0035 3.54E+00 0.250
0.02 9.228 0.048 3.038 0.0078 l.59E+01 0.255
0.03 9.730 0.090 3.119 0.014 4.4IE+01 0.265
0.04 10.69 0.177 3.269 0.027 1.10E+02 0.283
0.05 12.72 0.417 3.568 0.058 2.96E+02 0.316
0.06 18.91 1.680 4.352 0.193 1.17E+03 0.393
0.062 21.91 2.603 4.689 0.278 1.74E+03 0.422
0.064 26.69 4.534 5.185 0.437 2.84E+03 0.461
0.066 35.20 9.621 5.987 0.803 5.38E+03 0.516
Table B9·1 Continued (a-GaN, EJ.c).

eV £1 £2 n k a (cm· l ) R
0.068 50.85 29.50 7.404 1.992 1.37E+04 0.603
0.069 53.06 61.35 8.191 3.745 2.62E+04 0.667
0.0695 39.02 84.43 8.125 5.196 3.66E+04 0.705
0.07 7.517 97.22 7.247 6.708 4.76E+04 0.743
0.07025 -10.24 94.41 6.508 7.253 5. 17E+04 0.761
0.0705 -24.93 86.03 5.685 7.567 5.4IE+04 0.777
0.071 -40.31 63.06 4.155 7.588 5.46E+04 0.802
0.072 -38.93 30.29 2.280 6.642 4.85E+04 0.834
0.074 -23.17 9.789 0.996 4.916 3.69E+04 0.858
0.076 -14.55 4.591 0.594 3.861 2.97E+04 0.864
0.078 -9.721 2.629 0.418 3.146 2.49E+04 0.860
0.08 -6.692 1.695 0.325 2.607 2. llE+04 0.848
0.09 -0.447 0.424 0.291 0.729 6.65E+03 0.471
0.1 1.648 0.186 1.286 0.072 7.32E+02 0.017
0.11 2.682 0.103 1.638 0.031 3.49E+02 0.059
0.12 3.291 0.064 1.814 0.018 2. 16E+02 0.084
0.13 3.688 0.044 1.921 0.011 1.50E+02 0.099
0.14 3.966 0.031 1.991 0.0079 1.12E+02 0.110
0.15 4.169 0.023 2.042 0.0057 8.72E+Ol 0.117
0.2 4.683 0.0079 2.164 0.0018 3.68E+Ol 0.135
0.3 4.987 0.0020 2.233 0.00045 1.36E+Ol 0.145
0.4 5.083 0.00080 2.255 0.00018 7.23E+00 0.149
0.5 5.126 0.00040 2.264 0.000089 4.51E+OO 0.150
1.3 5.459 2.336 0.160
1.4 5.477 2.340 0.161
1.5 5.503 2.346 0.162
1.6 5.529 2.351 0.163
1.7 5.564 2.359 0.164
1.8 5.591 2.365 0.164
1.9 5.644 2.376 0.166
2 5.680 2.383 0.167
2.1 5.724 2.393 0.168
2.2 5.751 2.398 0.169
2.3 5.796 2.408 0.171
2.4 5.850 2.419 0.172
2.5 5.932 2.436 0.175
2.6 6.014 2.452 0.177
2.7 6.106 2.471 0.180
2.8 6.208 2.492 0.182
2.9 6.302 2.510 0.185
3 6.405 2.531 0.188
3.1 6.577 2.565 0.193
3.2 6.848 2.617 0.200
3.3 7.155 2.675 0.208
3.35 7.067 0.889 2.664 0.167 5.67E+04 0.208
3.4 7.310 1.416 2.716 0.261 8.98E+04 0.217
3.45 6.955 1.712 2.657 0.322 1.13E+05 0.211
3.5 6.721 1.775 2.615 0.339 1.20E+05 0.207
3.55 6.595 1.781 2.591 0.344 1.24E+05 0.204
3.6 6.530 1.781 2.579 0.345 1.26E+05 0.202
184 ill-V BINARY SEMICONDUCTORS
Table B9-1 Continued (a-GaN, E.Lc).

eV tl t2 n k a (ern· l ) R
3.65 6.474 1.785 2.568 0.347 1. 29E+05 0.201
3.7 6.434 1.788 2.560 0.349 l.31E+05 0.200
3.75 6.409 1.788 2.556 0.350 1.33E+05 0.199
3.8 6.390 1.795 2.552 0.352 1.35E+05 0.199
3.85 6.387 1.813 2.552 0.355 1.39E+05 0.199
3.9 6.396 1.845 2.555 0.361 1.43E+05 0.200
3.95 6.414 1.878 2.559 0.367 1.47E+05 0.200
4 6.434 1.897 2.563 0.370 1.50E+05 0.201
4.05 6.453 1.912 2.567 0.372 1.53E+05 0.202
4.1 6.476 1.936 2.572 0.376 1.56E+05 0.203
4.15 6.501 1.972 2.578 0.382 1.61E+05 0.204
4.2 6.526 2.010 2.584 0.389 1.66E+05 0.205
4.25 6.552 2.048 2.590 0.395 1.70E+05 0.206
4.3 6.582 2.089 2.597 0.402 1.75E+05 0.207
4.35 6.614 2.129 2.604 0.409 1.80E+05 0.208
4.4 6.649 2.170 2.612 0.415 1.85E+05 0.210
4.45 6.688 2.214 2.620 0.422 1.9IE+05 0.211
4.5 6.726 2.260 2.629 0.430 1.96E+05 0.213
4.55 6.770 2.318 2.639 0.439 2.03E+05 0.214
4.6 6.820 2.389 2.650 0.451 2.10E+05 0.216
4.65 6.871 2.471 2.662 0.464 2. 19E+05 0.219
4.7 6.922 2.560 2.674 0.479 2.28E+05 0.221
4.75 6.973 2.655 2.686 0.494 2.38E+05 0.223
4.8 7.024 2.754 2.699 0.510 2.48E+05 0.226
4.85 7.071 2.855 2.711 0.527 2.59E+05 0.228
4.9 7.114 2.962 2.722 0.544 2.70E+05 0.230
4.95 7.154 3.079 2.733 0.563 2.83E+05 0.233
5 7.189 3.205 2.744 0.584 2.96E+05 0.236
5.05 7.223 3.373 2.756 0.612 3.13E+05 0.239
5.1 7.244 3.484 2.764 0.630 3.26E+05 0.241
5.15 7.262 3.637 2.773 0.656 3.42E+05 0.244
5.2 7.272 3.795 2.782 0.682 3.60E+05 0.246
5.25 7.275 3.957 2.789 0.709 3.78E+05 0.249
5.3 7.220 4.124 2.787 0.740 3.98E+05 0.251
5.35 7.217 4.293 2.794 0.768 4. 17E+05 0.254
5.4 7.204 4.463 2.800 0.797 4.36E+05 0.257
5.45 7.182 4.634 2.804 0.826 4.57E+05 0.260
5.5 7.154 4.805 2.808 0.856 4.77E+05 0.263
5.55 7.120 4.977 2.811 0.885 4.98E+05 0.265
5.6 7.079 5.151 2.814 0.915 5.20E+05 0.268
5.65 7.032 5.325 2.815 0.946 5.42E+05 0.271
5.7 6.982 5.500 2.817 0.976 5.64E+05 0.274
5.75 6.928 5.675 2.818 1.007 5.87E+05 0.277
5.8 6.872 5.848 2.819 1.037 6'lOE+05 0.280
5.85 6.770 6.019 2.813 1.070 6.34E+05 0.283
5.9 6.716 6.162 2.813 1.095 6.55E+05 0.285
5.95 6.641 6.340 2.813 1.127 6.80E+05 0.288
6 6.545 6.555 2.811 1.166 7.09E+05 0.292
6.05 6.447 6.734 2.808 1.199 7.35E+05 0.295
6.1 6.343 6.912 2.804 1.233 7.62E+05 0.299
B9 WURTZITE GALLIUM NITRIDE (<x-GaN) 185
Table B9-1 Continued (a-GaN, E.lc).

eV tl t2 n k <X (em· l ) R
6.15 6.230 7.094 2.799 1.267 7.90E+05 0.302
6.2 6.108 7.281 2.794 1.303 8. 19E+05 0.306
6.25 5.967 7.475 2.787 1.341 8.50E+05 0.309
6.3 5.818 7.680 2.780 1.381 8.82E+05 0.313
6.35 5.663 7.892 2.773 1.423 9. 16E+05 0.318
6.4 5.487 8.101 2.763 1.466 9.51E+05 0.322
6.45 5.277 8.305 2.749 1.510 9.88E+05 0.327
6.5 4.999 8.500 2.726 1.559 1.03E+06 0.332
6.55 4.682 8.690 2.698 1.611 1.07E+06 0.337
6.6 4.354 8.878 2.669 1.663 l.1IE+06 0.342
6.65 4.006 9.064 2.638 1.718 1.16E+06 0.348
6.7 3.641 9.245 2.606 1.774 1.21E+06 0.355
6.75 3.243 9.406 2.568 1.831 1.25E+06 0.361
6.8 2.772 9.529 2.520 1.891 1.30E+06 0.369
6.85 2.186 9.562 2.449 1.952 1.36E+06 0.376
6.9 1.489 9.487 2.355 2.014 1.4IE+06 0.385
6.95 0.801 9.206 2.241 2.054 1.45E+06 0.391
7 0.334 8.793 2.137 2.057 1.46E+06 0.393
7.05 0.165 8.343 2.063 2.022 1.45E+06 0.387
7.1 0.089 7.782 1.984 1.961 1.41E+06 0.378
7.15 0.161 7.210 1.920 1.878 1.36E+06 0.363
7.2 0.320 6.880 1.898 1.812 1. 32E+06 0.350
7.25 0.489 6.580 1.882 1.748 1.28E+06 0.337
7.3 0.612 6.451 1.883 1.713 1.27E+06 0.330
7.35 0.705 6.338 1.882 1.684 1.25E+06 0.324
7.4 0.765 6.264 1.881 1.665 1.25E+06 0.321
7.45 0.842 6.215 1.886 1.648 1.24E+06 0.317
7.5 0.860 6.212 1.888 1.645 1.25E+06 0.316
7.55 0.847 6.259 1.893 1.654 1.27E+06 0.318
7.6 0.805 6.292 1.891 1.664 1.28E+06 0.320
7.65 0.751 6.329 1.887 1.677 1.30E+06 0.323
7.7 0.645 6.375 1.878 1.697 1.33E+06 0.327
7.75 0.477 6.402 1.857 1.724 1.35E+06 0.333
7.8 0.310 6.403 1.833 1.746 1.38E+06 0.338
7.85 0.118 6.351 1.799 1.765 1.41E+06 0.343
7.9 -0.042 6.265 1.764 1.776 1.42E+06 0.346
7.95 -0.194 6.134 1.724 1.779 1.43E+06 0.349
8 -0.324 5.977 1.683 1.776 1.44E+06 0.350
8.05 -0.380 5.812 1.650 1.761 1.44E+06 0.348
8.1 -0.406 5.647 1.621 1.742 1.43E+06 0.345
8.15 -0.436 5.481 1.591 1.723 1.42E+06 0.343
8.2 -0.458 5.314 1.561 1.702 1.4IE+06 0.340
8.25 -0.436 5.149 1.538 1.674 1.40E+06 0.334
8.3 -0.366 4.998 1.524 1.640 1.38E+06 0.327
8.35 -0.274 4.868 1.517 1.605 1.36E+06 0.319
8.4 -0.195 4.755 1.511 1.574 1.34E+06 0.312
8.45 -0.143 4.664 1.504 1.551 1.33E+06 0.306
8.5 -0.097 4.594 1.500 1.532 1.32E+06 0.302
8.55 -0.050 4.541 1.499 1.515 1.31E+06 0.298
8.6 -0.005 4.509 1.501 1.502 1.31E+06 0.295
Table B9-1 Continued (a-GaN, E.lc).

eV £1 £2 n k a (cm· 1) R
8.65 0.037 4.499 1.506 1.494 1.31E+06 0.292
8.7 0.066 4.506 1.512 1.490 1.3IE+06 0.291
8.75 0.076 4.529 1.518 1.492 1.32E+06 0.291
8.8 0.069 4.562 1.522 1.499 1.34E+06 0.293
8.85 0.055 4.591 1.524 1.506 1.35E+06 0.294
8.9 0.035 4.612 1.524 1.513 1.36E+06 0.296
8.95 0.011 4.621 1.522 1.518 1.38E+06 0.297
9 -0.013 4.631 1.520 1.524 1.39E+06 0.299
9.05 -0.037 4.640 1.517 1.529 1.40E+06 0.300
9.1 -0.067 4.649 1.514 1.536 1.42E+06 0.302
9.15 -0.083 4.659 1.513 1.540 1.43E+06 0.303
9.2 -0.078 4.668 1.515 1.541 1.44E+06 0.303
9.25 -0.072 4.671 1.517 1.540 1.44E+06 0.303
9.3 -0.066 4.672 1.518 1.539 1.45E+06 0.303
9.35 -0.059 4.666 1.518 1.537 1.46E+06 0.302
9.4 -0.051 4.652 1.517 1.533 1.46E+06 0.301
9.45 -0.042 4.631 1.515 1.529 1.46E+06 0.300
9.5 -0.025 4.599 1.512 1.521 1.46E+06 0.299
9.55 -0.0037 4.558 1.509 1.510 1.46E+06 0.296
Table B9-2 Optical constants of a-GaN for E IIc at 300 K.

eV £1 £2 n k a (cm· 1) R
0.01 9.906 0.029 3.147 0.0046 4.65E+00 0.268
0.02 10.25 0.067 3.202 0.010 2.llE+01 0.275
0.03 10.96 0.130 3.311 0.020 5.97E+01 0.287
0.04 12.38 0.269 3.518 0.038 1.55E+02 0.311
0.05 15.66 0.716 3.958 0.090 4.58E+02 0.356
0.06 28.52 4.403 5.356 0.411 2.50E+03 0.472
0.062 36.76 8.649 6.104 0.708 4.45E+03 0.521
0.064 52.35 22.92 7.400 1.549 1.00E+04 0.594
0.065 62.48 44.71 8.346 2.679 1.77E+04 0.647
0.0655 63.45 64.91 8.781 3.696 2.45E+04 0.679
0.066 52.64 91.78 8.901 5.156 3.45E+04 0.714
0.0665 20.95 113.2 8.250 6.863 4.63E+04 0.751
0.06675 -0.385 114.7 7.561 7.586 5. 13E+04 0.769
0.067 -20.39 108.5 6.710 8.088 5.49E+04 0.785
0.0675 -45.28 83.03 4.965 8.362 5.72E+04 0.812
0.068 -51.23 57.74 3.603 8.013 5.52E+04 0.831
0.069 -43.30 28.39 2.059 6.895 4.82E+04 0.855
0.07 -33.40 15.89 1.339 5.933 4.21E+04 0.868
0.072 -20.79 6.766 0.733 4.618 3.37E+04 0.880
0.074 -13.97 3.674 0.487 3.770 2.83E+04 0.881
0.076 -9.841 2.292 0.363 3.158 2.43E+04 0.877
0.078 -7.097 1.561 0.291 2.680 2. 12E+04 0.868
0.08 -5.150 1.130 0.247 2.283 1.85E+04 0.854
0.082 -3.701 0.854 0.221 1.936 1.6IE+04 0.832
0.084 -2.583 0.668 0.206 1.620 1.38E+04 0.798
0.086 -1.695 0.536 0.203 1.318 1.15E+04 0.745
Table B9·2 Continued (a-GaN, E lie).
eV £1 £2 n k a (cm· 1) R
0.09 -0.376 0.366 0.273 0.671 6. 12E+03 0.473
0.1 1.525 0.176 1.237 0.071 7.23E+02 0.012
0.11 2.531 0.102 1.591 0.032 3.58E+02 0.052
0.12 3.147 0.066 1.774 0.019 2.26E+02 0.078
0.13 3.559 0.046 1.886 0.012 1.60E+02 0.094
0.14 3.851 0.033 1.962 0.0085 1.20E+02 0.106
0.15 4.067 0.025 2.017 0.0062 9.45E+01 0.114
0.2 4.625 0.0086 2.151 0.0020 4.07E+Ol 0.133
0.3 4.961 0.0022 2.227 0.00050 1.53E+01 0.145
0.4 5.069 0.00090 2.251 0.00020 8. 12E+00 0.148
0.5 5.117 0.00045 2.262 0.00010 5.06E+00 0.150
1.2 5.451 2.335 0.160
1.3 5.494 2.344 0.162
1.4 5.529 2.351 0.163
1.5 5.561 2.358 0.164
1.6 5.592 2.365 0.165
1.7 5.624 2.372 0.165
1.8 5.660 2.379 0.167
1.9 5.700 2.388 0.168
2 5.746 2.397 0.169
2.1 5.797 2.408 0.171
2.2 5.854 2.420 0.172
2.3 5.919 2.433 0.174
2.4 5.990 2.447 0.176
2.5 6.069 2.463 0.179
2.6 6.154 2.481 0.181
2.7 6.247 2.499 0.184
B10 CUBIC GALLIUM NITRIDE
(~-GaN)

Gallium nitride (GaN) usually crystallizes in the hexagonal wurtzite structure. How-
ever, the growth of GaN films with cubic, zinc-blende structure on GaAs was re-
ported by Mizuta et al. [1]. Since their report, the growth of cubic GaN (~-GaN) has
been tried on various kinds of substrates by CVD or MBE (see Refs. [2-4]). It
should be noted, however, that all these cubic polytypes grown so far have high den-
sities of planar defects, mostly {Ill} microtwins and stacking faults, resulting from
large lattice mismatches.

Figure B 10-1 shows the electronic energy-band structure of ~-GaN as calculated
with the local-density-functional theory and norm-conserving pseudopotential
method by Miwa and Fukumoto [5]. The vertical arrows indicate the interband tran-
sitions at several CPs (Eo, E 1, E2 , and E/) in the BZ of ~-GaN [6]. Table BIO-1
summarizes the experimental CP energies for ~-GaN [3,6].
~-GaN is known to be a direct-band-gap semiconductor. Although there is a fair
consensus concerning the lattice parameter of ~-GaN (a=4.52±O.03 A) [7], its fun-
damental gap has resulted in a degree of controversy (see Refs. [2,3]). It is now ac-
cepted that the fundamental absorption edge corresponds to transition at the center
of the BZ (r6 -7r1) and lies in energy around 3.2 e V which is slightly lower than that
of the wurtzite polytype (-3.4 e V). Theoretically, the Eo energy is reported to be 2.7
eV [5], 3.1 eV [8], or 3.383 eV [9].
In group-IV elemental and III-V compound semiconductors, the second lowest
direct gap (usually labeled E 1) is attributed to transitions at around the L point or
along the A (r-L) direction. The third lowest direct gap (designated E2) is usually of
more complex origin and assigned to more than one regions of the BZ. The theoreti-
cal El (~-7Ll) values reported are 6.0 eV [5], 7.3 eV [8], and 6.567 eV [9], while
those for E2 (XS-7X 1) are 5.8 eV [5], 7.7 eV [8], and 7.264 eV [9]. Note that in most
of the group-IV and III-V semiconductors, these two gaps differ by more than 1 eV
in energy and, hence, show well-separated features in the optical spectra. In the case
of ~-GaN, it is believed both experimentally [6] and theoretically [5,8,9] that the El
and E2 gaps lie closer in energy (--0.6 eV) than for most of the group-IV and III-V
semiconductors.
188
B10 CUBIC GALLIUM NITRIDE (~-GaN) 189
10
> 0
~
>.
0')
L-
aJ -5
c=
w
-10
-15
r X K r L K W X
(U)
Figure B10-1 Electronic energy-band structure of ~-GaN as calculated with the local-
density-functional theory and norm-conserving pseudopotential method. (From Miwa and
Fukumoto [5].) The locations of several interband transitions are included by the vertical
arrows [6].
TABLE B10-1 Energies of the CPs in /3-GaN for E 1/ c at 300 K (in eV).
3.22±O.02 7.0 7.6
BIO.3 OPTICAL CONSTANTS

Optical properties in the IR region of a-GaN have been studied relatively inten-
sively, while investigations in cubic GaN have been remained scarce so far [10-12].
Giehler et al. [10] used IR transmission and RS spectroscopy to study the optical
phonon modes of GaN layers grown on GaAs(100) substrates by MBE. They deter-
mined the TO and LO frequencies in ~-GaN to be 552 and 739 cm-l , respectively.
Mirjalili et al. [11,12] studied IR optical properties of cubic GaN layers grown on
Gas As and GaP substrates by MBE. The measured reflectivity data were analyzed
using the classical oscillator model. The static and high-frequency dielectric con-
stants for f3-GaN obtained from this analysis were c,=9.40 and c_=5.35, respectively
[11].
Refractive indices of cubic GaN have been measured by Lin et al. [13] and Vidal
et al. [14]. The samples used were grown by MBE on GaAs(100) substrates misori-
ented by 4° [13] and on MgO(lOO) substrates [14]. Figure B10-2 shows the n(E)
dispersion data measured by Lin et al. [13] and Vidal et al. [14]. The n values of Lin
et al. [13] are found to be considerably larger than those reported by Vidal et al.
• Lin et al.
2.8 o Vidal et al.
2.6
c
Figure BI0·2 Refractive-
2.4 index dispersion for ~-GaN at
300 K. The experimental data
are taken from Lin et al. [13]
and Vidal et al. [14].
2.2 (3-GaN
o 1 2 3 4
Photon energy (e V)
[14].
The SE £(E) spectra for p-GaN have been measured by Logothetidis and cowork-
ers [6,15,16] in the spectral region up to 10 eV. The p-GaN samples were epitaxially
grown on Si(100) substrates by MBE. These SE data revealed, at least, three CP
structures at energies -3.25 (Eg), 7.0, and 7.6 eV. Measurements in the temperature
range from 80 to 650 K provided the temperature-dependent CP parameters of these
CPs.
Table B 10-2 lists the room-temperature values of £=£\+iEz, n*=n+ik, <x, and R for
p-GaN. A set of the optical constants for E~O.5 eV were calculated using the rest-
strahlen parameters of Mirjalili et at. [11]. The optical constants for 1.3~~3 .23 e V
were taken from Lin et at. [13] and those for D-3.25 eV were from Logothetidis and
coworkers [6,15,16].
The (£}, Ez), (n, k), <x, and R values in Table B1O-2 are graphed in Figs. B1O-3-
B 10-6, respectively. The vertical arrows in the figures indicate the positions of each
CPo
REFERENCES
1. M. Mizuta, S. Fujieda, Y. Matsumoto, and T. Kawamura, lpn. l. Appt. Phys. 25,
L943 (1986).
2. H. Okumura, S. Yoshida, and T. Okahisa, Appt. Phys. Lett. 64,2997 (1994).
3. D. E. Lacklison, J. W. Orton, I. Harrison, T. S. Cheng, L. C. Jenkins, C. T.
Foxon, and S. E. Hooper,J. Appt. Phys. 78,1838 (1995).
BID CUBIC GALLIUM NITRIDE (~-GaN) 191
4. O. Brandt, H. Yang, B. Jenichen, Y. Suzuki, L. Dliweritz, and K. H. Ploog,

Phys. Rev. B 52, R2253 (1995).
5. K. Miwa and A. Fukumoto, Phys. Rev. B 48,7897 (1993).
6. S. Logothetidis, J. Petalas, M. Cardona, and T. D. Moustakas, Phys. Rev. B 50,
18017 (1994).
7. I. Akasaki and H. Amano, in Properties of Group III Nitrides, EMIS Datare-
views Series No. 11, edited by J. H. Edgar (INSPEC (lEE), London, 1994), p.
30.
8. A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, Phys. Rev.
B 48, 11810 (1993).
9. W. J. Fan, M. F. Lin, T. C. Chong, and J. B. Xia, J. Appl. Phys. 79, 188 (1996).
10. M. Giehler, M. Ramsteiner, O. Brandt, H. Yang, and K. H. Ploog, Appl. Phys.
Lett. 67, 733 (1995).
11. G. Mirjalili, T. Dumelow, T. J. Parker, S. F. Shayesteh, T. S. Cheng, C. T.
Foxon, L. C. Jenkins, and D. E. Lacklinson, Infrared Phys. Technol. 37, 389
(1996).
12. G. Mirjalili, T. J. Parker, S. F. Shayesteh, M. M. Biilbiil, S. R. P. Smith, T. S.
Cheng, and C. T. Foxon, Phys. Rev. B 57,4656 (1998).
13. M. E. Lin, B. N. Sverdlov, S. Strite, H. Morko!(, and A. E. Drakin, Electron.
Lett. 29,1759 (1993).
14. M. A. Vidal, G. Ramirez-Flores, H. Navarro-Contreras, A. Lastras-Martfnez, R.
C. Powell, and J. E. Greene, Appl. Phys. Lett. 68,441 (1996).
15. S. Logothetidis, J. Petalas, M. Cardona, and T. D. Moustakas, Mat. Sci. Eng. B
29,65 (1995).
16. J. Petalas, S. Logothetidis, S. Boultadakis, M. Alouani, and J. M. Wills, Phys.
Rev. B 52,8082 (1995).
10
9 j3-GaN
8
7
6
c.J 5 e1
4
EO
3 !
2
1
0 2 4
Photon energy (eV)
Figure BI0-3 £1(E) and £2(E) spectra for ~-GaN at 300 K.
4
j3-GaN
3
n
~
c: 2
k
1
o 2 6 8 10
Photon energy (eV)
Figure BI0-4 nee) and k(E) spectra for ~-GaN at 300 K.
B 10 CUBIC GALLIUM NITRIDE (~-GaN) 193
WTO
{3-GaN
10-1 10° 101

Photon energy (eV)
Figure BI0·5 a(E) spectrum for ~-GaN at 300 K.
0.35
0.30
0.25
c::
0.20
0.15
{3-GaN
0.100
2 4 6 8 10
Photon energy (eV)
Figure BI0·6 R(E) spectrum for ~-GaN at 300 K.
Table BI0-2 Optical constants of f3-GaN at 300 K.

eV £1 £2 n k ex (em· l ) R
0.01 9.488 0.019 3.080 0.0031 3. 12E+00 0.260
0.02 9.776 0.043 3.127 0.0069 1.41E+01 0.266
0.03 10.36 0.083 3.218 0.013 3.94E+01 0.277
0.04 11.49 0.167 3.389 0.025 9.99E+01 0.296
0.05 13.99 0.414 3.740 0.055 2.80E+02 0.334
0.052 14.86 0.523 3.856 0.068 3.57E+02 0.346
0.054 15.98 0.679 3.999 0.085 4.65E+02 0.360
0.056 17.46 0.915 4.180 0.109 6.21E+02 0.377
0.058 19.49 1.295 4.417 0.147 8.62E+02 0.398
0.06 22.45 1.968 4.742 0.208 1.26E+03 0.425
0.062 27.11 3.328 5.217 0.319 2.00E+03 0.462
0.064 35.43 6.735 5.979 0.563 3.65E+03 0.512
0.066 53.06 19.38 7.401 1.309 8.76E+03 0.590
0.067 67.83 42.14 8.593 2.452 1.67E+04 0.649
0.068 59.63 104.64 9.489 5.514 3.80E+04 0.730
0.06825 39.70 122.69 9.183 6.680 4.62E+04 0.752
0.0685 10.89 131.60 8.454 7.783 5.41E+04 0.774
0.06875 -19.31 126.54 7.372 8.583 5.98E+04 0.795
0.069 -42.22 110.37 6.162 8.955 6.26E+04 0.813
0.07 -56.12 44.96 2.810 8.001 5.68E+04 0.857
0.071 -41.29 20.36 1.541 6.608 4.76E+04 0.877
0.072 -30.35 11.15 0.996 5.598 4.09E+04 0.887
0.074 -18.17 4.716 0.549 4.298 3.22E+04 0.895
0.076 -11.93 2.567 0.370 3.473 2.68E+04 0.894
0.D78 -8.192 1.606 0.279 2.876 2.27E+04 0.887
0.08 -5.723 1.097 0.228 2.403 1.95E+04 0.875
0.09 -0.226 0.311 0.281 0.553 5.04E+03 0.422
0.1 1.767 0.142 1.330 0.054 5.43E+02 0.021
0.12 3.390 0.051 1.841 0.014 1.69E+02 0.088
0.14 4.074 0.Q25 2.018 0.0063 8.88E+01 0.114
0.2 4.811 0.0064 2.193 0.0015 2.97E+01 0.140
0.3 5.127 0.0017 2.264 0.00037 l.11E+01 0.150
0.4 5.227 0.00066 2.286 0.00015 5.90E+00 0.153
0.5 5.272 0.00033 2.296 0.000073 3.68E+00 0.155
1.3 5.832 2.415 0.172
1.4 5.877 2.424 0.173
1.5 5.895 2.428 0.174
1.6 5.922 2.434 0.174
1.7 5.950 2.439 0.175
1.8 5.996 2.449 0.176
1.9 6.069 2.464 0.179
2 6.125 2.475 0.180
2.1 6.190 2.488 0.182
2.2 6.236 2.497 0.183
2.3 6.311 2.512 0.185
2.4 6.396 2.529 0.188
2.5 6.471 2.544 0.190
2.6 6.605 2.570 0.193
2.7 6.731 2.594 0.197
2.8 6.858 2.619 0.200
B10 CUBIC GALLIUM NITRIDE (~-GaN) 195
Table BIO-2 Continued ({3-GaN).

eV £1 £2 n k a (em'l) R
2.9 7.055 2.656 0.205
3 7.315 2.705 0.212
3.1 7.673 2.770 0.220
3.2 8.468 2.910 0.239
3.23 8.667 2.944 0.243
3.25 6.050 2.081 2.495 0.417 1.37E+05 0.194
3.3 5.398 2.031 2.363 0.430 1.44E+05 0.178
3.35 5.225 2.063 2.328 0.443 1.50E+05 0.174
3.4 5.139 2.113 2.312 0.457 1.57E+05 0.173
3.45 5.072 2.156 2.300 0.469 1.64E+05 0.172
3.5 5.009 2.175 2.288 0.475 1.69E+05 0.171
3.55 4.946 2.188 2.275 0.481 1.73E+05 0.170
3.6 4.886 2.203 2.263 0.487 l.78E+05 0.168
3.65 4.835 2.221 2.253 0.493 1.82E+05 0.168
3.7 4.791 2.239 2.245 0.499 1.87E+05 0.167
3.75 4.750 2.253 2.237 0.504 1.9IE+05 0.166
3.8 4.711 2.265 2.229 0.508 1.96E+05 0.166
3.85 4.677 2.277 2.223 0.512 2.00E+05 0.165
3.9 4.648 2.287 2.217 0.516 2.04E+05 0.165
3.95 4.621 2.299 2.212 0.520 2.08E+05 0.164
4 4.597 2.312 2.207 0.524 2. 12E+05 0.164
4.05 4.573 2.325 2.203 0.528 2. 17E+05 0.164
4.1 4.552 2.339 2.199 0.532 2.21E+05 0.164
4.15 4.532 2.353 2.195 0.536 2.25E+05 0.163
4.2 4.514 2.367 2.192 0.540 2.30E+05 0.163
4.25 4.496 2.381 2.189 0.544 2.34E+05 0.163
4.3 4.479 2.395 2.186 0.548 2.39E+05 0.163
4.35 4.463 2.410 2.184 0.552 2.43E+05 0.163
4.4 4.449 2.426 2.181 0.556 2.48E+05 0.163
4.45 4.436 2.442 2.179 0.560 2.53E+05 0.164
4.5 4.425 2.459 2.178 0.564 2.58E+05 0.164
4.55 4.417 2.477 2.177 0.569 2.62E+05 0.164
4.6 4.411 2.498 2.177 0.574 2.68E+05 0.165
4.65 4.401 2.520 2.176 0.579 2.73E+05 0.165
4.7 4.387 2.543 2.175 0.585 2.79E+05 0.165
4.75 4.375 2.568 2.174 0.591 2.84E+05 0.166
4.8 4.368 2.593 2.173 0.597 2.90E+05 0.166
4.85 4.363 2.620 2.174 0.603 2.96E+05 0.167
4.9 4.359 2.648 2.175 0.609 3.02E+05 0.168
4.95 4.356 2.677 2.176 0.615 3.09E+05 0.168
5 4.355 2.707 2.177 0.622 3.15E+05 0.169
5.05 4.355 2.737 2.179 0.628 3.22E+05 0.170
5.1 4.355 2.770 2.181 0.635 3.28E+05 0.171
5.15 4.355 2.804 2.183 0.642 3.35E+05 0.172
5.2 4.355 2.840 2.186 0.650 3.42E+05 0.173
5.25 4.355 2.877 2.188 0.658 3.50E+05 0.174
5.3 4.355 2.917 2.191 0.666 3.58E+05 0.175
5.35 4.355 2.961 2.193 0.675 3.66E+05 0.176
5.4 4.355 3.006 2.196 0.684 3.75E+05 0.178
5.45 4.355 3.054 2.199 0.694 3.84E+05 0.179
Table BI0-2 Continued (fj-GaN).

eV £1 £2 n k a (cm'l) R
5.5 4.355 3.102 2.202 0.704 3.93E+05 0.181
5.55 4.355 3.152 2.206 0.714 4.02E+05 0.182
5.6 4.356 3.202 2.209 0.725 4. llE+05 0.184
5.65 4.357 3.256 2.213 0.735 4.21E+05 0.185
5.7 4.359 3.311 2.217 0.747 4.31E+05 0.187
5.75 4.360 3.368 2.222 0.758 4.42E+05 0.189
5.8 4.361 3.428 2.226 0.770 4.53E+05 0.191
5.85 4.361 3.492 2.230 0.783 4.64E+05 0.192
5.9 4.361 3.563 2.235 0.797 4.77E+05 0.195
5.95 4.359 3.639 2.240 0.812 4.90E+05 0.197
6 4.357 3.723 2.246 0.829 5.04E+05 0.200
6.05 4.355 3.813 2.252 0.847 5. 19E+05 0.202
6.1 4.351 3.912 2.259 0.866 5.36E+05 0.205
6.15 4.346 4.016 2.265 0.886 5.53E+05 0.208
6.2 4.340 4.112 2.271 {l.905 5.69E+05 0.211
6.25 4.331 4.202 2.277 0.923 5.85E+05 0.214
6.3 4.319 4.295 2.281 0.941 6.01E+05 0.217
6.35 4.300 4.395 2.286 0.961 6. 19E+05 0.220
6.4 4.270 4.498 2.288 0.983 6.38E+05 0.223
6.45 4.235 4.600 2.290 1.004 6.57E+05 0.226
6.5 4.194 4.699 2.290 1.026 6.76E+05 0.229
6.55 4.144 4.798 2.290 1.048 6.96E+05 0.232
6.6 4.085 4.904 2.288 1.072 7. 17E+05 0.235
6.65 4.010 5.024 2.285 1.100 7.4IE+05 0.238
6.7 3.922 5.150 2.280 1.129 7.67E+05 0.242
6.75 3.822 5.286 2.274 1.162 7.95E+05 0.246
6.8 3.707 5.428 2.267 1.197 8.25E+05 0.251
6.85 3.569 5.551 2.255 1.231 8.55E+05 0.255
6.9 3.422 5.649 2.239 1.261 8.82E+05 0.259
6.95 3.269 5.729 2.221 1.290 9.09E+05 0.262
7 3.112 5.798 2.201 1.317 9.35E+05 0.265
7.05 2.953 5.851 2.180 1.342 9.59E+05 0.268
7.1 2.790 5.884 2.157 1.364 9.82E+05 0.271
7.15 2.621 5.891 2.129 1.383 1.00E+06 0.272
7.2 2.448 5.876 2.099 1.400 1.02E+06 0.274
7.25 2.273 5.863 2.069 1.417 1.04E+06 0.276
7.3 2.091 5.851 2.038 1.436 1.06E+06 0.278
7.35 1.898 5.852 2.006 1.458 1.09E+06 0.281
7.4 1.679 5.882 1.974 1.490 1.12E+06 0.286
7.45 1.471 5.935 1.947 1.524 1.15E+06 0.292
7.5 1.261 5.936 1.914 1.550 1.18E+06 0.297
7.55 1.021 5.906 1.873 1.577 1.2IE+06 0.302
7.6 0.744 5.834 1.820 1.603 1.23E+06 0.308
7.65 0.609 5.584 1.764 1.582 1.23E+06 0.304
7.7 0.537 5.268 1.708 1.542 1.20E+06 0.297
7.75 0.517 5,010 1.666 1.503 1.18E+06 0.289
7.8 0.533 4.816 1.640 1.468 1.16E+06 0.281
7.85 0.556 4.647 1.618 1.436 1.14E+06 0.274
7.9 0.586 4.497 1.600 1.405 1.13E+06 0.267
7.95 0.620 4.362 1.585 1.376 1. 11E+06 0.261
B 10 CUBIC GALLIUM NITRIDE (P-GaN) 197
Table D10-2 Continued (fJ-GaN).

eV tl t2 n k a (cm"l) R
8 0.648 4.255 1.574 1.352 1.10E+06 0.255
8.05 0.670 4.171 1.564 1.333 1.09E+06 0.251
8.1 0.689 4.097 1.556 1.316 1.08E+06 0.247
8.15 0.705 4.032 1.549 1.302 1.08E+06 0.244
8.2 0.720 3.970 1.542 1.287 1.07E+06 0.240
8.25 0.734 3.908 1.535 1.273 1.06E+06 0.237
8.3 0.747 3.847 1.528 1.259 1.06E+06 0.234
8.35 0.758 3.788 1.520 1.246 1.05E+06 0.231
8.4 0.767 3.729 1.512 1.233 1.05E+06 0.228
8.45 0.774 3.673 1.505 1.221 1.05E+06 0.225
8.5 0.780 3.619 1.497 1.209 1.04E+06 0.222
8.55 0.784 3.567 1.489 1.198 1.04E+06 0.219
8.6 0.788 3.516 1.482 1.187 1.03E+06 0.217
8.65 0.791 3.467 1.474 1.176 1.03E+06 0.214
8.7 0.793 3.418 1.467 1.165 1.03E+06 0.212
8.75 0.793 3.371 1.459 1.155 1.02E+06 0.209
8.8 0.794 3.326 1.451 1.146 1.02E+06 0.207
8.85 0.795 3.283 1.444 1.137 1.02E+06 0.205
8.9 0.797 3.243 1.438 1.128 1.02E+06 0.203
8.95 0.801 3.205 1.433 1.119 1.02E+06 0.201
9 0.807 3.167 1.428 1.109 1.01E+06 0.198
9.05 0.817 3.130 1.423 1.100 1.0IE+06 0.196
9.1 0.830 3.093 1.420 1.089 1.00E+06 0.193
9.15 0.845 3.056 1.417 1.078 1.00E+06 0.191
9.2 0.862 3.019 1.415 1.067 9.95E+05 0.188
9.25 0.880 2.983 1.413 1.056 9.90E+05 0.185
9.3 0.901 2.947 1.411 1.044 9.84E+05 0.182
9.35 0.926 2.911 1.411 1.032 9.78E+05 0.179
9.4 0.952 2.875 1.411 1.019 9.7IE+05 0.176
9.45 0.974 2.841 1.410 1.007 9.65E+05 .0.173
9.5 0.993 2.812 1.410 0.997 9.61E+05 0.171
9.55 1.010 2.787 1.410 0.988 9.57E+05 0.169
811 GALLIUM PHOSPHIDE
(GaP)
BILl GENERAL REMARKS

Gallium phosphide (GaP) is commercially one of the most important III-V semi-
conductors because of its application to electroluminescent devices. GaP is an indi-
rect-band-gap semiconductor possessing the zinc-blende structure. A wide variety of
theoretical and experimental works have given detailed information about the physi-
cal properties of this material (see Refs. [1,2]).

GaP is a suitable material to study some of the indirect-band-gap effects, since it has
three indirect band gaps, rg (rI5)~~ (XI) near 2.26 eV, rg (rIS) ~X7 (X3) near 2.48
eV, and rg (r15)~L6 (L I) near 2.63 eV, as well as the lowest-direct-band gap rg
(rIS)~r6 (r l ) near 2.74 eV (all at 300 K). We show in Fig. Bll-1 the electronic en-
ergy-band structure of GaP as calculated by an ENPM by Chelikowsky and Cohen
[3]. The SO interactions were not included in this calculation because of their negli-
gible effect in this material (e.g., .10-0.1 eV). Table Bll-1 lists the experimental
interband transition energies observed in GaP [4,5].
The indirect optical transitions in GaP occur at energy near 2.26 eV (E/). Cohen
and Bergstresser [6] predicted a conduction-band X I-X3 (~-X7) heteropolar split-
ting in GaP of about 0.3 eV. Spitzer et al. [7] observed an IR absorption band in de-
generate material, which they attributed to the XI~X3 transition (0.31 eV). The het-
eropolar splitting obtained by Chelikowsky and Cohen [3] is 0.55 eV, while that
calculated by Huang and Ching [8] is 1.18 eV. The next lowest conduction-band
minimum is at the L point: the corresponding indirect band gap is 2.63 eV [EgL , rg
(rI5)~L6 (L I)]·
The lowest direct r transitions in GaP occur at energies near 2.74 eV [Eo, rg
(rI5)~r6 (r l )] and 2.84 eV [Eo+.1o, r7 (rI5)~r6 (rl )]. The EI transitions may occur
along the <111> directions (A) or at the L point in the BZ [A4 •5 (A3)~A6 (AI) or L4•5
(~)~L6 (LI)] and are observed at energy -3.7 eV. The Eo' and Eo'+.1o' transitions
are assigned to occur at the center of the BZ and at energies -4.75 eV [rs (rIS)~r7
(rI5)] and -4.8 eV [rg (rI5)~rS (r I5)], respectively. The E2 and E2+S transitions are
thought to occur at the X point and at energies -5.25 eV [X7 (Xs)~~ (XI)] and
-5.75 eV [X7 (XS)~X7 (X3)], respectively. The EI' transitions are also expected to
occur at the L point in the BZ [L4•S (~)~~ (~)].
198
B 11 GALLIUM PHOSPHIDE (GaP) 199
><IJ
(9
0::
W
Z
W
WAVE VECTOR K
Figure B11·1 Electronic energy-band structure of GaP as calculated by an ENPM. (From
Chelikowsky and Cohen [3].) The locations of several interband transitions are included by
TABLE B11·1 Energies of the indirect gaps (E,lD) and CPs in GaP at 300 K.
EiID , CPs eV
EXg 2.26
ELg 2.63
Eo 2.74
Eo+l'.o 2.84
EI 3.70
Eo' 4.75
Eo'+l'.o' 4.8
E2 5.15-5.30
E2+0 5.75
E1' -6.7

The room-temperature values of the static and high-frequency dielectric constants of
GaP are reported to be in the ranges £,=10.2-11.2 and £_=8.4-9.11 [9-15], respec-
tively. Some data on the temperature dependence of the static dielectric constant at
atmospheric pressure have been reported [13-16]. These data showed that the £, val-
ue decreases with decreasing temperature. The hydrostatic-pressure effects on £, of
GaP, GaAs, Si, and some II-VI compounds have been investigated by Samara [14]
for pressures up to 0.7 GPa. He obtained the values of £, and its logarithmic pressure
derivatives of these materials.
Optical properties in the reststrahlen region of GaP have been studied by many
authors [9-13,17,18]. Optical absorption in the multiphonon absorption band region
has also been studied [9,17,19]. The R values in these regions from various labs
agreed to within the experimental accuracy.
At 1.>4 Ilm in n-GaP there was continuous increase in ex according to the law
exocAm, typical of absorption by free carriers [20-2]. The most unique feature of the
IR absorption spectrum in n-GaP is the sharp peak observed at 1.-3 Ilm (see Fig.
5.38). This peak is caused by electronic transitions between the r- and X-
conduction-band minima, namely, the interconduction-band absorption [20-3].
The refractive-index dispersion in the transparent region of GaP has been meas-
ured by a number of authors [13,24-7]. Figure BII-2 plots the n(E) data of GaP
measured by Bond (open circles, Ref. [24]) and Nelson and Turner (solid circles,
Ref. [25]), together with those measured by Jellison using two-channel polarization
modulation spectroscopy (open triangles, Ref. [28]). The method of minimum de-
3.6
GaP
Parsons & Coleman

0 Bond
3.4 • Nelson & Turner
... Jellison
C
3.2
3.0
o 1 2
Photon energy (eV)
Figure B11-2 Refractive-index dispersion for GaP at 300 K. The experimental data are ta-
ken from Bond (open circles, Ref. [24]), from Nelson and Turner (solid circles, Ref. [25]),
and from Jellison (open triangles, Ref. [28]). The solid line represents the calculated result
of Eq. (B 1l.1).
viation was used to measure the neE) data at room temperature [24] and 24.5°C [25].
The experimental uncertainty was 10.0012 [25]; in Bond [24] n was measured to the
fourth decimal. The temperature and pressure coefficients of the refractive index in
the transparent region of GaP have been discussed by Bertolotti et al. [29] and
Strossner et al. [30], respectively.
Parsons and Coleman [11] used Barker's classical oscillator model (Ref. [10)) for
the relative dielectric constant to include a frequency-dependent damping term in the
ionic oscillator term as follows:
(BIU)
where Sj, Vj, and Yj are the oscillator strength, oscillator frequency, and damping pa-
rameter, respectively. The second term in Eq. (BI1.1) represents the interband elec-
tronic contribution while the third term represents the lattice contribution to the re-
lative dielectric constant. Parsons and Coleman [11] fit the IR (Ref. [10)) and neE)
data in the O.5-4-llm range (Refs. [24,25)) with this expression. The solid line in Fig.
Bll-2 represents the calculated result of this expression (n-e/!2). The oscillator
parameters used in this calculation are summarized in Table BIl-2 [11]. Note that
Eq. (B 11.1) gives the static dielectric constant of 10,=11.148 (v~O cm,I).
Absorption coefficients at the intrinsic absorption edge of GaP have been meas-
ured by several authors [7,31-4]. These studies demonstrate the sensitivity afforded
optical absorption measurements in determining the lowest-indirect-band-gap en-
ergy (E/) in pure or doped GaP. The lowest-direct-band-gap energy (Eo) and its
temperature coefficient have been determined by Dean et al. [32]. Fine structures
TABLE B11·2 Oscillator parameters used in Eq. (B11.1) jor GaP at 300 K.
Electronic Ionic
S.I=2.570 E~=9.091
vel=2.90x104 cm,l S0=2.056
S.2=4.131 v0=363.4 em,l
ve2=4.27x104 em,l Yo=1.1 em' I
S.3=1.390 SI=7.0xlO,4
v.3=5.80x104 em,l vI=349.4 em,l
11=21.0 em,l
S2=3.5xlO,4
v2=358.4 em,l
12=12.6 cm,l
that could be explained by indirect transitions involving phonons have also been
successfully identified in a(E) spectra [31-3] (see Fig. 5.8, Ref. [31]). The hydro-
static-pressure dependence of the lowest-direct-absorption edge has also been stud-
ied using a diamond anvil cell up to 23 GPa by Yes et al. [35].
The fundamental reflectivity in the interband transition region of GaP has been
measured by Ehrenreich et al. [36], Philipp and Ehrenreich [37], and Stokowski and
Sell [38]. The e(E) spectrum obtained from the KK analysis by Philipp and Ehren-
reich [37] showed a value of ~-22 at the E2 peak (-5.2 eV). A set of the optical con-
stants in the interband transition region of GaP have also been determined using SE
in the 1.8-4.0-eV region by Jungk [39] and in the 1.5-6.0-eV region by Aspnes and
Studna [40]. An ~ value at the E2 peak for GaP(11O) measured by Aspnes and Stud-
na was 26.58 (E-5.0 eV). This value is much larger than that of Philipp and Ehren-
reich [37]. It should be noted that the dielectric function of tetrahedral semiconduc-
tors at the £2 peak, ~(E2)' provides a sensitive indication of the dielectric disconti-
nuity between the sample and ambient [41,42]. The sample with the cleanest surface,
as well as the dielectric-function spectrum most accurately representing that of the
pure bulk material, can then be identified simply from ~(E2) values by using the
"biggest is best" criterion.
More recently, Jellison [28] has determined the optical constants of GaP(100)
using two-channel polarization modulation spectroscopy. This instrument is par-
ticularly well-suited for the measurement of small values of k. His data show the
~(E2) maximum of 27.87 at E2=5.08 eV that is considerably larger than those ob-
tained by Aspnes and Studna (26.58, Ref. [40]) and Philipp and Ehrenreich (-22,
Ref. [37]). It must be noted, however, that the value of Jellison was obtained after
mathematically removing the effect of an oxide overlayer. The thickness of the ox-
ide overlayer (1.46 nm) was determined using a nulling ellipsometry experiment at
1152 nm (k-O). The temperature dependence of the complex dielectric function e(E)
for GaP from 10 to 640 K in the 1.6-5.6-eV spectral region has also been deter-
mined using SE by Zollner et al. [43].
An experimental determination of the absorption and reflection spectra of GaP in
the 1O-170-e V region has been made by Cardona and coworkers [44-7]. They ob-
served weak structures at -20,106, and 131 eV. These structures correspond to tran-
sitions at the outermost d (Ga), p (Ga), and p (P) core levels, respectively.
Table B 11-3 lists the room-temperature values of e=e\+i~, n*=n+ik, a, and R for
GaP. A complete set of the optical constants for ES;1.4 eV were obtained from Eq.
(B1U). The a (~ and k) values at the fundamental absorption edge (2.137s;E
S;2.724 eV) were taken from Spitzer et al. [7]. A set of the optical constants in the
interband transition region were taken from Jellison (1.476s;ES;5.6 e V) [28], from
Aspnes and Studna (5.3S;ES;6.0 eV) [40], and from Philipp and Ehrenreich
(6.5S;ES;25 eV) [37]. The a and k values for E230 eV were taken from Cardona et al.
[45].
The (e\, ~), (n, k), a, and R values in Table B 11-3 are plotted in Figs. B 11-3-
Bll-6, respectively. The vertical arrows in the figures indicate the positions of each
CP and E/ gap. The MDF analysis [4,48,49] suggested that the Eo and Eo+flo
B11 GALLIUM PHOSPHIDE (GaP) 203
and E gX gap. The MDF analysis [4,48,49] suggested that the Eo and Eo+ilo structures
can be characterized by a 3D Mo CP, the EI structure by a 3D MI (or 2D Mo) CP, and
the Eo', E2, and E2+~ structures by a DHO (a broadened 2D MI CP).
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30
20
Co,) 10
-10
o
Photon energy (eV)
Figure B11-3 £1(E) and £2(E) spectra for GaP at 300 K.
7.-~.-~.-~.-~.-~
6 E,!
GaP
5
~ 4
c 3
2
EX
9
1
t
o 268 10
Photon energy (eV)
Figure 811-4 n(E) and k(E) spectra for GaP at 300 K.
108~~~~~~~~~~~~
10 7
wro
106
1
105
IE 104
o
'-" 103
~
102 GaP
10 1
10°
1
10 10- 2 10-1 100 10 1 102
Photon energy (eV)
Figure B11-5 a(E) spectrum for GaP at 300 K.
0.6
Eo
a: !
0.4 El!
0.2
GaP
o 2 4 6 8 10
Photon energy (eV)
Figure B11-6 R(E) spectrum for GaP at 300 K.
Table B11·3 Optical constants o/GaP at 300 K.

eV tl t2 n k a (em-I) R
0.Q1 11.25 0.0016 3.355 0.00023 2.36E-01 0.292
0.02 11.65 0.0044 3.414 0.00065 1.31E+00 0.299
0,03 12.80 0.014 3.577 0.0020 6. llE+OO 0.317
0.04 19.08 0.222 4.369 0.025 1.03E+02 0.394
0.041 21.60 0.464 4.647 0.050 2.08E+02 0.417
0.042 25.88 1.332 5.089 0.131 5.57E+02 0.451
0.043 33.26 4.823 5.782 0.417 1.82E+03 0.499
0.044 46.67 15.97 6.928 1.152 5. 14E+03 0.568
0.0442 50.30 20.77 7.236 1.435 6.43E+03 0.586
0.0444 54.59 26.60 7.593 1.752 7.88E+03 0.605
0.0446 61.10 34.61 8.103 2.135 9.66E+03 0.629
0.0448 71.58 49.42 8.904 2.775 1.26E+04 0.663
0.045 83.55 84.50 10.06 4.200 1.92E+04 0.712
0.0451 81.26 118.7 10.61 5.593 2.56E+04 0.744
0.0452 53.56 163.6 10.62 7.701 3.53E+04 0.781
0.0453 -15.39 186.1 9.256 10.05 4.62E+04 0.820
0.0454 -80.79 149.0 6.659 11.19 5.15E+04 0.855
0.0456 -90.43 56.83 2.861 9.930 4.59E+04 0.899
0.0458 -65.26 23.53 1.434 8.204 3.81E+04 0.922
0.046 -47.67 11.81 0.849 6.956 3.24E+04 0.934
0.0462 -36.28 6.810 0.563 6.050 2.83E+04 0.942
0.0464 -28.55 4.324 0.403 5.358 2.52E+04 0.947
0.0466 -23.01 2.944 0.306 4.807 2.27E+04 0.951
0.0468 -18.87 2.112 0.243 4.351 2.06E+04 0.953
0.047 -15.67 1.578 0.199 3.963 1.89E+04 0.954
0.048 -6.595 0.540 0.105 2.570 1.25E+04 0.946
0.049 -2.346 0.264 0.086 1.534 7.62E+03 0.903
0.05 0.122 0.156 0.399 0.195 9.87E+02 0.200
0.052 2.874 0.072 1.695 0.021 l.13E+02 0.067
0.054 4.374 0.042 2.091 0.010 5.48E+Ol 0.125
0.056 5.317 0.027 2.306 0.0059 3.35E+01 0.156
0.058 5.965 0.019 2.442 0.0039 2.30E+Ol 0.176
0.06 6.436 0.014 2.537 0.0028 1.70E+01 0.189
0,07 7.641 0.0049 2.764 0.00088 6.25E+00 0.220
0.08 8.140 0.0024 2.853 0.00042 3.39E+00 0.231
0.09 8.408 0.0014 2.900 0.00024 2. 19E+00 0.237
0.1 8.572 0.00090 2.928 0.00015 1.55E+00 0.241
0.2 8.996 2.999 0.250
0.3 9.077 3.013 0.252
0.4 9.125 3.021 0.253
0.5 9.169 3.028 0.253
0.6 9.217 3.036 0.254
0.7 9.271 3.045 0.256
0.8 9.332 3.055 0.257
0.9 9.403 3.066 0.258
1 9.483 3.079 0.260
1.1 9.573 3.094 0.262
1.2 9.674 3.110 0.264
1.3 9.787 3.128 0.266
1.4 9.914 3.149 0.268
Table Bll-3 Continued (GaP).

eV £1 £2 n k a (cm'l) R
1.476 10.157 3.187 0.273
1.484 10.125 3.182 0.272
1.493 10.112 3.180 0.272
1.502 10.131 3.183 0.272
1.512 10.163 3.188 0.273
1.521 10.176 3.190 0.273
1.53 10.182 3.191 0.273
1.54 10.202 3.194 0.274
1.549 10.221 3.197 0.274
1.559 10.227 3.198 0.274
1.569 10.246 3.201 0.274
1.579 10.246 3.201 0.274
1.589 10.272 3.205 0.275
1.599 10.285 3.207 0.275
1.61 10.304 3.210 0.276
1.62 10.323 3.213 0.276
1.631 10.349 3.217 0.276
1.642 10.368 3.220 0.277
1.653 10.381 3.222 0.277
1.664 10.394 3.224 0.277
1.675 10.414 3.227 0.278
1.686 10.433 3.230 0.278
1.698 10.452 3.233 0.278
1.71 10.485 3.238 0.279
1.722 10.498 3.240 0.279
1.734 10.543 3.247 0.280
1.746 10.556 3.249 0.280
1.758 10.582 3.253 0.281
1.771 10.608 3.257 0.281
1.783 10.628 3.260 0.281
1.796 10.647 3.263 0.282
1.809 10.693 3.270 0.283
1.823 10.713 3.273 0.283
1.836 10.732 3.276 0.283
1.85 10.758 3.280 0.284
1.864 10.785 3.284 0.284
1.878 10.824 3.290 0.285
1.892 10.857 3.295 0.286
1.907 10.890 3.300 0.286
1.922 10.916 3.304 0.287
1.937 10.956 3.310 0.287
1.952 10.989 3.315 0.288
1.967 11.016 3.319 0.288
1.983 11.082 3.329 0.289
1.999 11.122 3.335 0.290
2.015 11.162 3.341 0.291
2.032 11.202 3.347 0.292
2.049 11.256 3.355 0.292
2.066 11.296 3.361 0.293
2.083 11.343 3.368 0.294
eV £1 £2 n k ex. (em-I) R
2.101 11.391 3.375 0.295
2.119 11.451 3.384 0.296
2.137 11.512 0.000034 3.393 0.0000051 1.10E+00 0.297
2.156 11.580 0.000039 3.403 0.0000057 1.25E+00 0.298
2.175 11.628 0.000050 3.410 0.0000074 1.63E+00 0.299
2.194 11.710 0.000068 3.422 0.000010 2.20E+00 0.300
2.213 11.772 0.00011 3.431 0.000016 3.70E+00 0.301
2.233 11.840 0.00022 3.441 0.000032 7.20E+00 0.302
2.254 11.916 0.00045 3.452 0.000066 1.50E+Ol 0.303
2.274 11.992 0.00090 3.463 0.00013 3.00E+01 0.305
2.295 12.083 0.0016 3.476 0.00023 5.30E+Ol 0.306
2.317 12.152 0.0026 3.486 0.00037 8.70E+Ol 0.307
2.339 12.264 0.0037 3.502 0.00053 1.25E+02 0.309
2.361 12.348 0.0051 3.514 0.00072 1.73E+02 0.310
2.384 12.440 0.0065 3.527 0.00093 2.24E+02 0.312
2.407 12.539 0.0084 3.541 0.0012 2.90E+02 0.313
2.43 12.652 0.011 3.557 0.0015 3.70E+02 0.315
2.454 12.766 0.013 3.573 0.0018 4.60E+02 0.317
2.479 12.888 0.016 3.590 0.0023 5.70E+02 0.318
2.504 13.025 0.020 3.609 0.0028 7.lOE+02 0.320
2.53 13.162 0.024 3.628 0.0034 8.60E+02 0.322
2.556 13.315 0.030 3.649 0.0041 1.06E+03 0.325
2.582 13.520 0.036 3.677 0.0049 1.28E+03 0.328
2.609 13.705 0.045 3.702 0.0060 1.60E+03 0.330
2.637 13.905 0.057 3.729 0.0077 2.05E+03 0.333
2.666 14.145 0.077 3.761 0.010 2.75E+03 0.336
2.695 14.425 0.108 3.798 0.014 3.90E+03 0.340
2.724 14.737 0.178 3.839 0.023 6.40E+03 0.344
2.754 15.014 0.349 3.875 0.045 1.26E+04 0.348
2.767 15.129 0.412 3.890 0.053 1.49E+04 0.349
2.779 15.237 0.484 3.904 0.062 1.75E+04 0.351
2.792 15.338 0.572 3.917 0.073 2.07E+04 0.352
2.804 15.430 0.668 3.929 0.085 2.42E+04 0.353
2.817 15.498 0.764 3.938 0.097 2.77E+04 0.354
2.83 15.552 0.844 3.945 0.107 3.07E+04 0.355
2.843 15.613 0.917 3.953 0.116 3.34E+04 0.356
2.856 15.674 0.974 3.961 0.123 3.56E+04 0.357
2.869 15.736 1.024 3.969 0.129 3.75E+04 0.357
2.883 15.822 1.083 3.980 0.136 3.97E+04 0.359
2.896 15.875 1.148 3.987 0.144 4.23E+04 0.359
2.91 15.938 1.199 3.995 0.150 4.42E+04 0.360
2.923 16.080 1.260 4.013 0.157 4.65E+04 0.362
2.937 16.174 1.312 4.025 0.163 4.85E+04 0.363
2.951 16.261 1.348 4.036 0.167 5.00E+04 0.364
2.965 16.364 1.401 4.049 0.173 5.20E+04 0.365
2.98 16.476 1.446 4.063 0.178 5.38E+04 0.367
2.994 16.588 1.500 4.077 0.184 5.59E+04 0.368
3.008 16.692 1.562 4.090 0.191 5.83E+04 0.369
3.023 16.820 1.618 4.106 0.197 6.04E+04 0.371
3.038 16.950 1.665 4.122 0.202 6.22E+04 0.372

eV £1 £2 n k a (cm'l) R
3.053 17.079 1.730 4.138 0.209 6.47E+04 0.374
3.068 17.217 1.795 4.155 0.216 6.72E+04 0.376
3.083 17.372 1.870 4.174 0.224 7.00E+04 0.377
3.099 17.536 1.938 4.194 0.231 7.26E+04 0.379
3.114 17.701 2.014 4.214 0.239 7.55E+04 0.381
3.13 17.865 2.100 4.234 0.248 7.87E+04 0.383
3.146 18.056 2.188 4.257 0.257 8.20E+04 0.385
3.162 18.213 2.275 4.276 0.266 8.53E+04 0.387
3.178 18.423 2.366 4.301 0.275 8.86E+04 0.389
3.195 18.615 2.482 4.324 0.287 9.30E+04 0.392
3.211 18.843 2.584 4.351 0.297 9.67E+04 0.394
3.228 19.054 2.704 4.376 0.309 1.01E+05 0.396
3.245 19.302 2.819 4.405 0.320 1.05E+05 0.399
3.262 19.592 2.983 4.439 0.336 l.l1E+05 0.402
3.279 19.893 3.141 4.474 0.351 1.17E+05 0.405
3.297 20.152 3.297 4.504 0.366 1.22E+05 0.408
3.314 20.463 3.496 4.540 0.385 1. 29E+05 0.411
3.332 20.786 3.698 4.577 0.404 1.36E+05 0.414
3.35 21.117 3.932 4.615 0.426 1.45E+05 0.418
3.368 21.487 4.173 4.657 0.448 1.53E+05 0.422
3.387 21.884 4.457 4.702 0.474 1.63E+05 0.425
3.405 22.300 4.777 4.749 0.503 1.74E+05 0.430
3.424 22.740 5.173 4.799 0.539 1.87E+05 0.434
3.443 23.220 5.591 4.853 0.576 2.0IE+05 0.439
3.462 23.691 6.034 4.906 0.615 2. 16E+05 0.443
3.482 24.255 6.640 4.970 0.668 2.36E+05 0.449
3.501 24.834 7.312 5.036 0.726 2.58E+05 0.455
3.521 25.451 8.110 5.107 0.794 2.83E+05 0.461
3.541 26.131 9.065 5.186 0.874 3.14E+05 0.469
3.562 26.755 10.286 5.264 0.977 3.53E+05 0.476
3.582 27.342 11.789 5.344 1.103 4.0IE+05 0.484
3.603 27.764 13.618 5.417 1.257 4.59E+05 0.493
3.624 27.852 15.825 5.472 1.446 5.3IE+05 0.502
3.646 27.248 18.401 5.483 1.678 6.20E+05 0.511
3.667 25.830 20.899 5.434 1.923 7.15E+05 0.518
3.689 23.520 22.935 5.309 2.160 8.08E+05 0.522
3.711 20.932 24.000 5.137 2.336 8.79E+05 0.523
3.733 18.189 24.236 4.924 2.461 9.32E+05 0.521
3.756 15.824 23.757 4.710 2.522 9.60E+05 0.516
3.779 14.003 22.833 4.516 2.528 9.69E+05 0.509
3.802 12.753 21.750 4.357 2.496 9.62E+05 0.501
3.826 11.856 20.572 4.219 2.438 9.46E+05 0.491
3.849 11.312 19.645 4.122 2.383 9.30E+05 0.483
3.873 11.023 18.880 4.055 2.328 9. 14E+05 0.476
3.898 10.828 18.213 4.001 2.276 8.99E+05 0.470
3.922 10.692 17.746 3.963 2.239 8.90E+05 0.465
3.947 10.664 17.315 3.937 2.199 8.80E+05 0.461
3.973 10.556 16.956 3.907 2.170 8.74E+05 0.457
3.998 10.496 16.679 3.886 2.146 8.70E+05 0.454
4.024 10.431 16.411 3.865 2.123 8.66E+05 0.451
Table B11·3 Continued (GaP).

eV £\ £2 n k a (cm'\) R
4.051 10.420 16.194 3.852 2.102 8.63E+05 0.449
4.077 10.433 16.022 3.844 2.084 8.61E+05 0.447
4.104 10.462 15.859 3.838 2.066 8.60E+05 0.445
4.132 10.481 15.750 3.834 2.054 8.60E+05 0.444
4.159 10.522 15.654 3.833 2.042 8.61E+05 0.443
4.188 10.586 15.590 3.836 2.032 8.63E+05 0.442
4.216 10.652 15.575 3.842 2.027 8.66E+05 0.442
4.245 10.785 15.566 3.855 2.019 8.69E+05 0.442
4.274 10.827 15.618 3.862 2.022 8.76E+05 0.443
4.304 10.958 15.667 3.878 2.020 8.81E+05 0.444
4.334 11.098 15.779 3.898 2.024 8.89E+05 0.445
4.364 11.297 15.932 3.926 2.029 8.98E+05 0.447
4.395 11.473 16.132 3.954 2.040 9.09E+05 0.449
4.427 11.673 16.427 3.989 2.059 9.24E+05 0.452
4.459 11.866 16.760 4.025 2.082 9.41E+05 0.456
4.491 12.015 17.166 4.060 2.114 9.63E+05 0.460
4.524 12.269 17.714 4.112 2.154 9.88E+05 0.465
4.557 12.348 18.465 4.157 2.221 1.03E+06 0.473
4.591 12.472 19.277 4.209 2.290 1.07E+06 0.480
4.625 12.443 20.289 4.257 2.383 1.12E+06 0.489
4.66 12.120 21.488 4.289 2.505 1.18E+06 0.499
4.695 11.604 22.684 4.306 2.634 1.25E+06 0.509
4.731 10.801 23.885 4.302 2.776 1.33E+06 0.520
4.767 9.283 24.571 4.216 2.914 1.41E+06 0.528
4.804 8.208 25.692 4.194 3.063 1.49E+06 0.539
4.842 6.958 26.028 4.117 3.161 1.55E+06 0.545
4.88 5.645 26.368 4.038 3.265 1.62E+06 0.552
4.919 4.622 26.629 3.978 3.347 1.67E+06 0.558
4.958 3.184 27.191 3.909 3.478 1.75E+06 0.568
4.998 1.724 27.345 3.816 3.583 1.82E+06 0.576
5.039 0.007 27.803 3.729 3.728 1.90E+06 0.589
5.08 -2.137 27.874 3.593 3.879 2.00E+06 0.602
5.122 -4.393 27.645 3.435 4.024 2.09E+06 0.617
5.165 -6.555 26.361 3.210 4.106 2. 15E+06 0.629
5.208 -8.229 24.943 3.003 4.153 2. 19E+06 0.639
5.252 -9.543 23.433 2.807 4.174 2.22E+06 0.648
5.3 -12.314 18.748 2.249 4.168 2.24E+06 0.678
5.4 -11.963 13.829 1.778 3.889 2. 13E+06 0.689
5.5 -10.264 10.974 1.543 3.556 1.98E+06 0.677
5.6 -8.785 9.522 1.444 3.297 1. 87E+06 0.657
5.7 -7.667 8.576 1.385 3.096 1.79E+06 0.637
5.8 -6.791 7.910 1.348 2.934 1.73E+06 0.618
5.9 -6.096 7.439 1.327 2.803 1.68E+06 0.600
6 -5.523 7.042 1.309 2.690 1.64E+06 0.583
6.5 -1.325 7.250 1.739 2.085 1.37E+06 0.413
6.75 -2.550 7.250 1.602 2.262 1.55E+06 0.461
7 -2.500 6.100 1.430 2.132 1.5IE+06 0.453
8 -1.400 3.500 1.088 1.608 1.30E+06 0.373
9 -0.050 3.000 1.215 1.235 1.13E+06 0.244
9.5 0.000 3.200 1.265 1.265 1.22E+06 0.248
Table Bll·3 Continued (GaP).

eV 10 1 102 n k a (em-I) R
10 -Q.400 3.050 1.157 1.318 1.34E+06 0.276
11 -0.325 2.375 1.018 1.167 1.30E+06 0.251
12 -0.100 1.925 0.956 1.007 1.22E+06 0.210
13 -0.025 1.600 0.887 0.901 1.19E+06 0.189
14 0.025 1.450 0.859 0.844 1.20E+06 0.176
15 0.200 1.125 0.819 0.687 1.04E+06 0.133
16 0.350 1.000 0.839 0.596 9.66E+05 0.102
17 0.450 0.800 0.827 0.484 8.34E+05 0.074
18 0.500 0.525 0.783 0.335 6. 12E+05 0.049
19 0.750 0.525 0.913 0.288 5.54E+05 0.024
20 1.000 0.500 1.029 0.243 4.93E+05 0.014
21 1.025 0.525 1.043 0.252 5.36E+05 0.G15
22 1.000 0.550 1.035 0.266 5.93E+05 0.017
23 1.000 0.550 1.035 0.266 6.20E+05 0.017
24 1.000 0.500 1.029 0.243 5.91E+05 0.014
25 1.025 0.450 1.035 0.217 5.5IE+05 0.012
30 0.076 2.30E+05
40 0.055 2.23E+05
50 0.047 2.36E+05
60 0.041 2.50E+05
70 0.036 2.53E+05
80 0.030 2.42E+05
90 0.025 2.26E+05
100 0.022 2. 18E+05
105 0.021 2.27E+05
106 0.022 2.40E+05
107 0.022 2.41E+05
108 0.022 2.37E+05
109 0.022 2.42E+05
110 0.022 2.42E+05
115 0.020 2.30E+05
120 0.019 2.28E+05
125 0.017 2. 17E+05
130 0.018 2.33E+05
131 0.019 2.46E+05
132 0.018 2.44E+05
133 0.018 2.38E+05
134 0.017 2.34E+05
135 0.017 2.34E+05
140 0.018 2.50E+05
145 O.oI8 2.63E+05
150 0.017 2.64E+05
155 0.017 2.64E+05
812 GALLIUM ARSENIDE
(GaAs)

Regarding device applications, GaAs is currently one of the most versatile semicon-
ductors in use [1-3]. From an aspect of the solid-state physics, GaAs is extremely
interesting as prototypal direct-band-gap semiconductor. A review of many physical
and semiconducting properties of GaAs has been given in Refs. [4-8].

See discussion in Sec. 1.2.2 (b) in the companion book "Optical Properties o/Crys-
talline and Amorphous Semiconductors: Materials and Fundamental Principfes."

The static dielectric constant £, of GaAs has been measured using various techniques
by many authors (see Ref. [8]). The measured £, values have yielded widely differ-
ent values ranging from 10.0 to 13.2 at room temperature. The value of
£.=13.18±3% determined by Samara [9] from low-frequency (10-100 kHz) capaci-
tance measurements is in good agreement with the results of Champlin and Glover
(13.18±O.07, Ref. [10]), Jones and Mao (13.2±O.2, Ref. [11]), Lu et al. (13.17, Ref.
[12]), and Stzalkowski et al. (13.10±0.1, Ref. [13]). The 300-K high-frequency
value £.. for GaAs has also been determined to be 10.89 [9] and 10.9 [14,15]. More
recently, Moore and Holm [16] have determined the values of£. and £.. at 300 and 5
K from fits to observed interference in transmission of thin samples with parallel
surfaces. At 300 K (5 K), £,=12.90 (12.46) and £..=10.86 (10.58). The effects of
temperature and hydrostatic pressure on £. for GaAs have also been studied by Sam-
ara [9] (see Fig. 2.4).
Optical properties in the reststrahlen region of GaAs have been studied by
Kachare et al. [17], Holm et al. [18], and Engelbrecht et al. [19] at room temperature.
The reststrahlen parameters for undoped, high-resistivity GaAs determined are:
ooro=269.2 cm-t, oow=292.77 cm-l , '}'=2.5 cm-l , and £..=10.90 [17]; ooro=268.2 cm-\
001.0=291.5 cm-l , '}'=2.3 cm-l , and £..=11.1 [18]. We averaged in Fig. 2.5 (Sec. 2.2.1)
these parameters to obtain ooro=268.7 cm-l , oow=292.1 cm-l , '}'=2.4 cm-l , and £..=11.0.
The corresponding reststrahlen spectra are shown in Figs. 2.6-2.8. Low- temperature
reststrahlen optical spectra have also been reported by Hass and Henvis [20] at 4.2 K
and by Jamshidi and Parker [21] at 6 K. LO-phonon-plasmon coupling in doped
213
GaAs has been studied by means of IR reflectivity technique by several authors

[18,19,22,23] (see Fig. 2.9, Ref. [23]). Investigation of multiphonon absorption
bands in GaAs has been performed by Cochran et al. [24] in the frequency range
250-lO00 cm"1 at T=20-292 K, by Koteles and Datars [25] in the range 50-600 cm"1
at T=15 K, and by Bendow et al. [26] in the range 550-1250 cm"1 at T=298-560 K.
The absorption coefficients obtained from these studies were a-lO z-1.6xlO3 cm"1 in
the frequency range 250-350 cm"1 and a_lO"Z_10Z cm"1 in the range 350-1250 cm"l.
The IR absorption in n-GaAs has been experimentally studied as a function of
wavelength in the range from a few tens of micrometers to the fundamental absorp-
tion edge (see Ref. [8]). Perhaps the most comprehensive investigation of the ab-
sorption coefficient for n-GaAs in the IR range is due to Spitzer and Whelan [27].
They determined the 300-K absorption spectra in the wavelength region from 1 to
-20 Ilm with different doping levels between 5xlOI4 and 5.4xlOlS cm"3. Other work-
ers [28-31] have later confirmed the major features of the GaAs spectra obtained by
Spitzer and Whelan.
The absorption data for n-GaAs for A. up to lO Ilm (see Fig. 5.36) revealed the
interconduction-band absorption, superimposed on the relatively weak free-carrier
absorption. The interconduction-band absorption in n-GaAs is a typical example of
the I-type process [32]. The intervalence-band absorption in p-GaAs has also been
observed (see Fig. 5.40, Ref. [33]) and discussed theoretically [34,35].
The n(E) dispersion in the transparent region of GaAs has been measured by
many authors (see Ref. [8]). We presented in Figs. 5.29 and 5.30 the n(E) dispersion
curves for a high-purity sample and for n-GaAs samples with n between 5x10 16 and
6.7x10 1s cm"3 [36]. These data were measured by surface reflection. Marple's prism-
minimum-deviation data (n-6xlO I6 cm"3, Ref. [37]) had been plotted for purposes of
comparison and agreed within 0.002 over the range in photon energy where com-
parison is possible.
Pikhtin and Yas'kov [38] have fitted their measured n data and Marple's 300-K
data [37] to an oscillator formula of the form:
Z _ 1 A In E: - EZ ~ G;
(B12.1)
n - +- Z 2 + £.J 2 2
1t Eo -E ;=1 E; -E
with the parameters Eo=1.428 eV, EI=3.0 eV, E2=5.1 eV, E3=0.0333 eV, GI=39.194
eva, Gz=136.08 eva, G3=0.OO218 eV2 ,and A=0.5858. This expression fits the ex-
perimental data to a few units in the third decimal place.
Temperature dependence of the refractive index of GaAs has been studied both
theoretically [39-42] and experimentally [37,43-7] (see Fig. 5.25, Ref. [37]). In situ
measurements of GaAs and AlAs n(E) dispersion at MBE epitaxial growth tem-
perature (600°C) have been demonstrated by Bardinal et al. [48] using dynamic op-
tical reflectometry with a tunable laser light source.
Several investigations [49-53] have made in the past which have determined the
B12 GALLIUM ARSENIDE (GaAs) 215
absorption coefficient o.(E) in GaAs as a function of photon energy E and tempera-

ture T. Sturge [49] reported the o.(E) values of high-quality GaAs over the range of
photon energy 0.6 to 2.75 eV at temperatures from T=10 to 294 K. In Fig. 5.7 (a) we
reproduced his obtained results. The main absorption edge in this figure showed a
sharp peak due to the formation of discrete excitons (n=l). He also observed the ex-
ponential broadening at the low energy side of the absorption edge that is well
known as the Urbach tail (see Sec. 5.1.3). Several authors have also investigated the
effects of pressure [54,55] (see Fig. 5.11, Ref. [54]) and doping concentration on 0.
[52,56] (see Fig. 5.14, Ref. [52]).
The 300-K reflectivity spectra of GaAs have been measured in the 0-6-eV region
by Morrison [57] and in the 1.5-25-e V region by Philipp and Ehrenreich (see Fig.
3.11(b), Ref. [58]). The real and imaginary parts of the optical constants have been
deduced from the KK relations. It should be noted that the k value at the E2 peak
measured by Morrison [57] (-2) is considerably smaller than that of Philipp and
Ehrenreich (-3.4, Ref. [58]).
The room-temperature SE data have been reported by Aspnes et al. [59] in the
1.5-6.0-eV region (see Figs. 3.1,3.2,3.5-3.8) and more recently by Jellison [60] in
the 1.48-5.30-eV region. The SE instrument used by Jellison [60] was of a two-
channel polarization modulation type. His data showed the Bz(E2 ) maximum of 27.73
at E2=4.77 eV. This value is considerably larger than that obtained by Aspnes et al.
(25.20, Ref. [59]) and Philipp and Ehrenreich (-19, Ref. [58]). Note, however, that
the value of Jellison was obtained after mathematically removing the effect of an
oxide overlayer (d=1.63 nm). Some authors reported the effects of temperature [61-
3] (see Fig. 3.13, Ref. [61]) and doping [64] on the SE E(E) spectra. The effect of
hydrostatic pressure on the E(E) spectra has been studied theoretically by Alouani
and Wills [65]. The uniaxial-stress-induced change in the optical constants of GaAs
in the visible-UV range has been measured using SE by Etchegoin et al. (see Fig.
3.25, Ref. [66]).
An experimental determination of the absorption and reflection spectra of GaAs
in the outermost core region (10-170 eV) has been made by Cardona and coworkers
[67-70]. They observed weak structures at -21, 43, 106, and 143 eV. These struc-
tures correspond to transitions at the outermost d (Ga), d (As), p (Ga), and p (As)
core levels, respectively. The SE E(E) data in the limited Ga 3d core level (E-19-24
eV) have also been reported by GUnther et al. [71].
Table B12-1lists the room-temperature values of E=E)+iEz, n*=n+ik, 0., and R for
GaAs. A complete set of the optical constants for E~O.4 eV were calculated using
the averaged reststrahlen parameters of Kachare et al. [17] and Holm et al. [18]. The
real optical constants E) and n for 0.5~~1.4 eV were calculated from Eq. (BI2.1).
The real (n) and imaginary constants (k, 0.) for 1.41~~1.48 eV were taken from
Sell et al. [36] and Dell et al. [53], respectively. A set of the optical constants for
1.502~E~5.297 eV and those for 5.5~~15 eV were taken from Jellison [60] and
Philipp and Ehrenreich [58], respectively. The 0. and k values for ~30 eV were ta-
ken from Cardona et al. [68].
The (e l , ez), (n, k), n, and R values in Table B12-1 are plotted in Figs. B12-1-
BI2-4, respectively. The vertical arrows in the figures indicate the positions of each
CP. The MDF analysis [72-4] suggested that the Eo and Eo+~ structures can be
characterized by a 3D Mo CP, the EI and EI+~I structures by a 3D MI (or 2D Mo) CP,
and the Eo' and E2 structures by a DHO (a broadened 2D MI CP).
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B 12 GALLIUM ARSENIDE (GaAs) 219
15 6
"'TO
! 5 GaAs
10 4
.::t:.
c~
3
Figure B12·2 n(E) and k(E)

spectra for GaAs at 300 K.
o O~~~~~~~~
0.03 0.035 0.04 100
Photon energy (eV)
"'TO
GaAs
Figure B12·3 oo.E)

spectrum for GaAs at
10-1 100 101 300K.
Photon energy (eV)
1.0
i WTO
!E2
0.8 E1+A~
E'
0 1
Eo+Ao E1!
0.6
a: Eo!
0.4 t
~ Figure B12-4 R(£)
0.2 I spectrum for GaAs at

300K.
GaAs
0
10-2 10-1 10° 10 1
Photon energy (eV)
Table B12-1 Optical constants ofGaAs at 300 K.

eV £1 £2 n k a (cm- I ) R
0.01 13.20 0.0065 3.633 0.00089 9.04E-01 0.323
0.02 14.13 0.026 3.759 0.0035 7.08E+00 0.336
0.025 15.58 0.070 3,947 0.0089 2.26E+Ol 0.355
0.027 16.83 0.123 4.103 0.D15 4.l1E+01 0.370
0.029 19.26 0.266 4.389 0.030 8.90E+01 0.395
0.03 21.58 0.451 4.646 0.049 1.48E+02 0.417
0.031 25.91 0.927 5.091 0.091 2.86E+02 0.451
0.032 36.70 2.870 6.063 0.237 7.68E+02 0.514
0.0322 41.11 3.984 6.419 0.310 1.0IE+03 0.534
0.0324 47.34 5.888 6_894 0.427 1.40E+03 0.559
0.0326 56.73 9.540 7.558 0.631 2.09E+03 0.589
0.0328 72.19 17.87 8.560 1.044 3.47E+03 0.630
0.033 99.71 43.01 10.21 2.107 7.05E+03 0.686
0.0331 117.9 77.21 11.38 3.393 1.14E+04 0.724
0.03315 123.4 107.3 11.98 4.480 1.51E+04 0.746
0.0332 117.0 149.4 12.39 6.032 2.03E+04 0.770
0.0333 19,07 223.7 11.03 10.13 3.42E+04 0.822
0.0334 -90.06 159.1 6.809 11.68 3.96E+04 0.862
0.03345 -100.4 114.8 5.105 11.25 3.81E+04 0.875
0.0335 -96.48 82.38 3.898 10.57 3.59E+04 0.885
0.0336 -78.52 45.39 2.467 9.199 3. 13E+04 0.898
0.0338 -50.22 18.54 1.287 7.203 2.47E+04 0.910
0.034 -34.33 9.807 0.829 5.917 2.04E+04 0.914
0.0342 -24.72 6.018 0.601 5.008 1.74E+04 0,913
0.0344 -18.37 4.056 0.470 4.312 1.50E+04 0.909
0.0346 -13.89 2.915 0.389 3,748 1.3IE+04 0_903
0.0348 -10.57 2.194 0.336 3.269 1.15E+04 0.892
0.035 -8.012 1.710 0.300 2.846 1.01E+04 0.877
0.0355 -3.620 1.022 0.266 1.921 6.91E+03 0.799
0.036 -0.840 0.679 0.346 0.980 3.58E+03 0.500
0.037 2.475 0.361 1.577 0.115 4.30E+02 0.052
Table 812·1 Continued (GaAs).

eV £1 £2 n k a (cm· 1) R
0.038 4.380 0.224 2.094 0.053 2.06E+02 0.125
0.039 5.616 0.152 2.370 0.032 1.27E+02 0.165
0.04 6.482 0.110 2.546 0.022 8.72E+01 0.190
0.045 8.578 0.035 2.929 0.0060 2.76E+01 0.241
0.05 9.405 0.017 3.067 0.0028 1.41E+01 0.258
0.06 10.11 0.0064 3.180 0.0010 6.1IE+00 0.272
0.07 10.41 0.0032 3.227 0.00050 3.53E+00 0.278
0.08 10.58 0.0019 3.253 0.00029 2.35E+00 0.281
0.09 10.68 0.0012 3.268 0.00019 1.70E+00 0.282
0.1 10.75 0.00083 3.279 0.00013 1.29E+00 0.284
0.2 10.94 0.000087 3.308 0.000013 2.67E-01 0.287
0.3 10.98 0.000025 3.313 0.0000038 1.15E-01 0.288
0.4 10.99 0.000010 3.315 0.0000016 6.40E-02 0.288
0.5 11.05 3.324 0.289
0.6 11.14 3.338 0.290
0.7 11.25 3.354 0.292
0.8 11.38 3.374 0.295
0.9 11.54 3.397 0.297
1 11.72 3.423 0.300
1.1 11.93 3.455 0.304
1.2 12.19 3.492 0.308
1.3 12.52 3.539 0.313
1.4 13.06 3.614 0.321
1.41 13.16 0.013 3.627 0.0018 2.59E+02 0.322
1.42 13.34 0.354 3.653 0.049 6.98E+03 0.325
1.421 13.33 0.425 3.651 0.058 8.38E+03 0.325
1.422 13.32 0.425 3.650 0.058 8.40E+03 0.325
1.425 13.26 0.417 3.642 0.057 8.28E+03 0.324
1.43 13.22 0.418 3.637 0.057 8.33E+03 0.323
1.44 13.21 0.443 3.635 0.061 8.90E+03 0.323
1.45 13.21 0.478 3.635 0.066 9.67E+03 0.323
1.46 13.22 0.506 3.636 0.070 1.03E+04 0.323
1.47 13.22 0.530 3.636 0.073 1.09E+04 0.324
1.48 13.22 0.547 3.637 0.Q75 1.13E+04 0.324
1.502 13.397 0.564 3.661 0.077 1.17E+04 0.326
1.512 13.404 0.593 3.662 0.081 1.24E+04 0.326
1.521 13.455 0.616 3.669 0.084 1.30E+04 0.327
1.53 13.455 0.602 3.669 0.082 1.27E+04 0.327
1.54 13.476 0.632 3.672 0.086 1.34E+04 0.327
1.549 13.527 0.655 3.679 0.089 1.40E+04 0.328
1.559 13.527 0.655 3.679 0.089 1.41E+04 0.328
1.569 13.534 0.677 3.680 0.092 1.46E+04 0.328
1.579 13.563 0.693 3.684 0.094 1.50E+04 0.329
1.589 13.570 0.700 3.685 0.095 1.53E+04 0.329
1.599 13.599 0.716 3.689 0.097 1.57E+04 0.329
1.61 13.621 0.746 3.692 0.101 1.65E+04 0.329
1.62 13.665 0.747 3.698 0.101 1. 66E+04 0.330
1.631 13.701 0.778 3.703 0.105 1.74E+04 0.331
1.642 13.746 0.779 3.709 0.105 1.75E+04 0.331
1.653 13.767 0.802 3.712 0.108 1.81E+04 0.332
Table B12·1 Continued (GaAs).

eV £( £2 n k a (cm-() R
1.664 13.797 0.803 3.716 0.108 1.82E+04 0.332
1.675 13.834 0.826 3.721 0.111 1.88E+04 0.333
1.686 13.885 0.850 3.728 0.114 1.95E+04 0.333
1.698 13.929 0.866 3.734 0.116 2.00E+04 0.334
1.71 13.966 0.897 3.739 0.120 2.08E+04 0.334
1.722 14.002 0.921 3.744 0.123 2. 15E+04 0.335
1.734 14.039 0.945 3.749 0.126 2.21E+04 0.336
1.746 14.105 0.985 3.758 0.131 2.32E+04 0.337
1.758 14.165 1.017 3.766 0.135 2.41E+04 0.337
1.771 14.193 1.063 3.770 0.141 2.53E+04 0.338
1.783 14.236 1.118 3.776 0.148 2.68E+04 0.338
1.796 14.258 1.141 3.779 0.151 2.75E+04 0.339
1.809 14.295 1.165 3.784 0.154 2.83E+04 0.339
1.823 14.316 1.204 3.787 0.159 2.94E+04 0.340
1.836 14.361 1.229 3.793 0.162 3.02E+04 0.340
1.85 14.398 1.246 3.798 0.164 3.08E+04 0.341
1.864 14.442 1.278 3.804 0.168 3.17E+04 0.341
1.878 14.479 1.303 3.809 0.171 3.26E+04 0.342
1.892 14.524 1.335 3.815 0.175 3.36E+04 0.343
1.907 14.599 1.362 3.825 0.178 3.44E+04 0.344
1.922 14.643 1.394 3.831 0.182 3.55E+04 0.344
1.937 14.704 1.420 3.839 0.185 3.63E+04 0.345
1.952 14.741 1.445 3.844 0.188 3.72E+04 0.346
1.967 14.794 1.471 3.851 0.191 3.81E+04 0.346
1.983 14.900 1.507 3.865 0.195 3.92E+04 0.348
1.999 14.968 1.542 3.874 0.199 4.03E+04 0.349
2.015 15.021 1.576 3.881 0.203 4. 15E+04 0.350
2.032 15.097 1.603 3.891 0.206 4.24E+04 0.351
2.049 15.166 1.638 3.900 0.210 4.36E+04 0.351
2.066 15.258 1.674 3.912 0.214 4.48E+04 0.353
2.083 15.342 1.710 3.923 0.218 4.60E+04 0.354
2.101 15.427 1.747 3.934 0.222 4.73E+04 0.355
2.119 15.519 1.791 3.946 0.227 4.88E+04 0.356
2.137 15.628 1.837 3.960 0.232 5.03E+04 0.358
2.156 15.760 1.885 3.977 0.237 5.18E+04 0.359
2.175 15.885 1.941 3.993 0.243 5.36E+04 0.361
2.194 16.011 1.988 4.009 0.248 5.52E+04 0.362
2.213 16.128 2.052 4.024 0.255 5.72E+04 0.364
2.233 16.253 2.109 4.040 0.261 5.91E+04 0.366
2.254 16.396 2.175 4.058 0.268 6. 12E+04 0.367
2.274 16.538 2.242 4.076 0.275 6.34E+04 0.369
2.295 16.698 2.310 4.096 0.282 6.56E+04 0.371
2.317 16.857 2.396 4.116 0.291 6.84E+04 0.373
2.339 17.057 2.493 4.141 0.301 7.14E+04 0.375
2.361 17.226 2.589 4.162 0.311 7.44E+04 0.377
2.384 17.419 2.696 4.186 0.322 7.78E+04 0.380
2.407 17.629 2.814 4.212 0.334 8.15E+04 0.382
2.43 17.875 2.935 4.242 0.346 8.53E+04 0.385
2.454 18.120 3.076 4.272 0.360 8.96E+04 0.388
2.479 18.409 3.239 4.307 0.376 9.45E+04 0.391
Table B12·1 Continued (GaAs).

eV £\ £2 n k a (cm·\) R
2.504 18.689 3.421 4.341 0.394 1.00E+05 0.395
2.53 18.978 3.623 4.376 0.414 1.06E+05 0.398
2.556 19.346 3.854 4.420 0.436 1.13E+05 0.402
2.582 19.740 4.136 4.467 0.463 1.21E+05 0.406
2.609 20.170 4.446 4.518 0.492 1.30E+05 0.411
2.637 20.653 4.822 4.575 0.527 1.41E+05 0.416
2.666 21.154 5.246 4.634 0.566 1.53E+05 0.422
2.695 21.728 5.802 4.702 0.617 1.69E+05 0.428
2.724 22.370 6.479 4.778 0.678 1.87E+05 0.435
2.754 23.030 7.336 4.858 0.755 2. llE+05 0.443
2.767 23.233 7.697 4.884 0.788 2.21E+05 0.446
2.779 23.559 8.164 4.924 0.829 2.34E+05 0.450
2.792 23.852 8.703 4.962 0.877 2.48E+05 0.453
2.804 24.159 9.284 5.002 0.928 2.64E+05 0.458
2.817 24.432 9.981 5.041 0.990 2.83E+05 0.462
2.83 24.620 10.714 5.073 1.056 3.03E+05 0.466
2.843 24.824 11.600 5.110 1.135 3.27E+05 0.471
2.856 24.868 12.581 5.135 1.225 3.55E+05 0.475
2.869 24.793 13.632 5.152 1.323 3.85E+05 0.480
2.883 24.475 14.817 5.152 1.438 4.20E+05 0.484
2.896 23.836 16.014 5.126 1.562 4.59E+05 0.487
2.91 23.001 17.018 5.080 1.675 4.94E+05 0.489
2.923 21.198 17.965 4.949 1.815 5.38E+05 0.488
2.937 20.023 18.116 4.849 1.868 5.56E+05 0.486
2.951 19.049 17.945 4.755 1.887 5.65E+05 0.481
2.965 18.388 17.681 4.685 1.887 5.67E+05 0.478
2.98 17.923 17.439 4.633 1.882 5.69E+05 0.475
2.994 17.648 17.294 4.602 1.879 5.70E+05 0.473
3.008 17.392 17.264 4.577 1.886 5.75E+05 0.472
3.023 17.140 17.331 4.556 1.902 5.83E+05 0.472
3.038 16.932 17.469 4.542 1.923 5.92E+05 0.472
3.053 16.687 17.664 4.527 1.951 6.04E+05 0.473
3.068 16.375 17.937 4.509 1.989 6. 19E+05 0.474
3.083 16.021 18.221 4.488 2.030 6.35E+05 0.476
3.099 15.552 18.558 4.459 2.081 6.54E+05 0.477
3.114 14.947 18.869 4.417 2.136 6.74E+05 0.479
3.13 14.231 19.062 4.360 2.186 6.94E+05 0.480
3.146 13.401 19.129 4.287 2.231 7. 12E+05 0.479
3.162 12.627 18.970 4.208 2.254 7.23E+05 0.477
3.178 11.891 18.657 4.124 2.262 7.29E+05 0.474
3.195 11.326 18.249 4.050 2.253 7.30E+05 0.470
3.211 10.878 17.882 3.988 2.242 7.30E+05 0.467
3.228 10.550 17.499 3.936 2.223 7.27E+05 0.463
3.245 10.348 17.127 3.896 2.198 7.23E+05 0.459
3.262 10.134 16.781 3.856 2.176 7.20E+05 0.455
3.279 9.976 16.469 3.823 2.154 7. 16E+05 0.452
3.297 9.856 16.201 3.796 2.134 7. 13E+05 0.449
3.314 9.781 15.980 3.776 2.116 7.l1E+05 0.446
3.332 9.617 15.760 3.747 2.103 7.lOE+05 0.444
3.35 9.535 15.556 3.727 2.087 7.09E+05 0.442
Table 812·1 Continued (GaAs).

eV £1 £2 n k a. (em-I) R
3.368 9.468 15.363 3.709 2.071 7.07E+05 0.439
3.387 9.396 15.177 3.691 2.056 7.06E+05 0.437
3.405 9.302 15.018 3.672 2.045 7.06E+05 0.435
3.424 9.260 14.851 3.658 2.030 7.05E+05 0.433
3.443 9.188 14.706 3.642 2.019 7.05E+05 0.431
3.462 9.149 14.571 3.630 2.007 7.04E+05 0.430
3.482 9.103 14.432 3.617 1.995 7.04E+05 0.428
3.501 9.077 14.324 3.608 1.985 7.05E+05 0.427
3.521 9.056 14.209 3.599 1.974 7.05E+05 0.425
3.541 9.057 14.088 3.592 1.961 7.04E+05 0.424
3.562 9.027 14.006 3.584 1.954 7.06E+05 0.423
3.582 9.016 13.907 3.577 1.944 7.06E+05 0.421
3.603 9.044 13.821 3.575 1.933 7.06E+05 0.420
3.624 9.043 13.737 3.570 1.924 7.07E+05 0.419
3.646 9.034 13.686 3.566 1.919 7.09E+05 0.419
3.667 9.065 13.611 3.565 1.909 7.lOE+05 0.418
3.689 9.059 13.571 3.562 1.905 7. 12E+05 0.417
3.711 9.118 13.529 3.566 1.897 7. 14E+05 0.417
3.733 9.119 13.493 3.564 1.893 7. 17E+05 0.416
3.756 9.130 13.472 3.564 1.890 7.20E+05 0.416
3.779 9.181 13.462 3.569 1.886 7.23E+05 0.416
3.802 9.228 13.442 3.573 1.881 7.25E+05 0.415
3.826 9.322 13.454 3.584 1.877 7.28E+05 0.416
3.849 9.380 13.466 3.591 1.875 7.32E+05 0.416
3.873 9.434 13.485 3.598 1.874 7.36E+05 0.416
3.898 9.560 13.524 3.614 1.871 7.39E+05 0.417
3.922 9.603 13.601 3.623 1.877 7.46E+05 0.418
3.947 9.752 13.650 3.642 1.874 7.50E+05 0.419
3.973 9.832 13.747 3.656 1.880 7.57E+05 0.420
3.998 9.945 13.869 3.675 1.887 7.65E+05 0.422
4.024 10.070 13.989 3.695 1.893 7.72E+05 0.423
4.051 10.224 14.162 3.721 1.903 7.81E+05 0.426
4.077 10.395 14.344 3.749 1.913 7.91E+05 0.428
4.104 10.601 14.591 3.784 1.928 8.02E+05 0.431
4.132 10.783 14.856 3.817 1.946 8.15E+05 0.434
4.159 10.941 15.188 3.851 1.972 8.32E+05 0.438
4.188 1Ll51 15.580 3.893 2.001 8.50E+05 0.443
4.216 11.299 16.023 3.931 2.038 8.7IE+05 0.448
4.245 11.514 16.537 3.979 2.078 8.94E+05 0.453
4.274 11.635 17.162 4.023 2.133 9.24E+05 0.460
4.304 11.620 17.830 4.056 2.198 9.59E+05 0.466
4.334 11.606 18.629 4.096 2.274 9.99E+05 0.474
4.364 11.516 19.521 4.134 2.361 1.04E+06 0.482
4.395 11.268 20.520 4.164 2.464 LlOE+06 0.491
4.427 10.784 21.584 4.178 2.583 1.l6E+06 0.501
4.459 10.127 22.548 4.174 2.701 1.22E+06 0.510
4.491 9.042 23.384 4.130 2.831 1.29E+06 0.519
4.524 8.212 23.992 4.097 2.928 1.34E+06 0.526
4.557 7.298 24.525 4.055 3.024 1.40E+06 0.533
4.591 6.378 25.047 4.014 3.120 1.45E+06 0.540
B12 GALLIUM ARSENIDE (GaAs) 225
Table B12-1 Continued (GaAs).
eV £1 £2 n k a (cm·1) R
4.625 5.438 25.657 3.979 3.224 1.51E+06 0.548
4.66 4.301 26.222 3.929 3.337 1.58E+06 0.556
4.695 3.052 26.697 3.868 3.451 1.64E+06 0.565
4.731 1.652 27.163 3.799 3.575 1.71E+06 0.576
4.767 0.097 27.729 3.730 3.717 1.80E+06 0.588
4.804 -1.877 27.719 3.599 3.851 1.88E+06 0.600
4.842 -4.051 27.476 3.444 3.989 1.96E+06 0.614
4.88 -6.379 26.821 3.255 4.120 2.04E+06 0.629
4.919 -8.670 25.604 3.030 4.225 2. 11E+06 0.644
4.958 -10.518 23.701 2.776 4.269 2. 15E+06 0.658
4.998 -11.738 21.183 2.498 4.240 2. 15E+06 0.669
5.039 -12.209 18.842 2.263 4.163 2. 13E+06 0.676
5.08 -12.163 16.719 2.063 4.052 2.09E+06 0.680
5.122 -11.679 14.975 1.912 3.916 2.03E+06 0.679
5.165 -10.956 13.472 1.790 3.763 1.97E+06 0.674
5.208 -10.394 12.588 1.722 3.655 1.93E+06 0.668
5.252 -9.734 11.768 1.664 3.536 1.88E+06 0.660
5.297 -9.012 11.696 1.696 3.448 1.85E+06 0.646
5.5 -3.60 7.00 1.46 2.39 1.34E+06 0.504
5.75 -2.80 6.10 1.40 2.18 1.27E+06 0.468
6 -2.15 5.68 1.40 2.03 1.23E+06 0.433
6.25 -1.95 5.60 1.41 1.98 1.26E+06 0.421
6.5 -2.53 5.50 1.33 2.07 1.37E+06 0.453
6.75 -2.51 4.50 1.15 1.96 1.34E+06 0.456
7 -2.33 3.90 1.05 1.85 1.32E+06 0.450
8 -1.18 2.55 0.90 1.41 l.15E+06 0.357
9 -0.55 2.00 0.87 1.15 1.05E+06 0.276
10 -0.10 1.80 0.92 0.98 9.89E+05 0.206
11 0.03 1.55 0.89 0.87 9.72E+05 0.178
12 0.18 1.40 0.89 0.78 9.55E+05 0.150
13 0.33 1.18 0.88 0.67 8.82E+05 0.116
14 0.48 1.00 0.89 0.56 7.96E+05 0.084
15 0.50 0.88 0.87 0.51 7.70E+05 0.073
20 0.145 2.95E+05
21 0.163 3.46E+05
22 0.144 3.22E+05
22.5 0.146 3.32E+05
23 0.141 3.29E+05
24 0.118 2.87E+05
25 0.100 2.53E+05
30 0.064 1.96E+05
35 0.051 1.80E+05
40 0.043 1.73E+05
41 0.042 1.75E+05
42 0.051 2.18E+05
43 0.054 2.37E+05
45 0.050 2.28E+05
50 0.043 2.18E+05
60 0.039 2.35E+05
70 0.037 2.66E+05
Table B12-! Continued (GaAs).

eV £1 £2 n k a (em'l) R
80 0.035 2.83E+05
90 0.032 2.93E+05
100 0.029 2.97E+05
102 0.029 2.98E+05
103 0.029 3.02E+05
104 0.029 3.07E+05
105 0.029 3.13E+05
106 0.029 3.12E+05
107 0.029 3.lOE+05
108 0.028 3.12E+05
109 0.028 3.12E+05
110 0.028 3.lOE+05
112 0.027 3.02E+05
115 0.026 2.99E+05
120 0.024 2.98E+05
130 0.022 2.95E+05
140 0.021 2.92E+05
142 0.020 2.92E+05
143 0.021 2.98E+05
145 0.020 2.98E+05
150 0.019 2.93E+05
155 0.018 2.86E+05
813 GALLIUM ANTIMONIDE
(GaSb)

Gallium antimonide (GaS b) is a semiconductor of the group III-V compounds. Its
lattice has the zinc-blende structure; the melting point ofthe compound is 985 K [1].
GaSb and its lattice-matched alloy systems AIGaAsSb and InGaAsSb have been
employed in various optoelectronic and electron devices, such as lasers, photode-
tectors, and heterojunction bipolar transistors [2]. The study of low carrier concen-
tration GaSb layer is crucial for the fabrication of such GaSb-based devices. With
the current progress in MBE and MOCVD it has now been possible to grow high-
quality, undoped GaSb with a residual carrier density as low as lxlO I6 cm-3 [3,4].

Figure B13-1 shows the electronic energy-band structure of GaSb as calculated by
an ENPM by Chelikowsky and Cohen [5]. The SO interactions were taken into con-
sideration in this calculation. Table B13-1 lists the experimental CP and indirect-
band-gap energies in GaSb [6-9].
GaSb is a direct-band-gap semiconductor. The lowest direct gap Eo [rs (rIS)~r6
(rl)] is 0.72 eV and its SO-splitting gap Eo+flo [r7 (rIS)~r6 (rl)] is 1.46 eV (T=300
K). The four equivalent L 6-conduction minima lie energetically very near the low-
est-conduction-band minimum (-0.085 eV above r 6 , Ref. [8]) so that most electrons
populate L6c valleys at room temperature. The first and second lowest-indirect-band-
gap energies are 0.805 eV [EgL , rs (r1S)~L6 (LI)] and 1.05 eV [EgX, rs (rls)~~
(XI)], respectively. The corresponding theoretical values are [5]: 0.86 eV (Eo), 1.62
eV (Eo+~), 1.22 eV (EgL), and 1.72 eV (Egx).
The E I , EI+~I' and E I ' transitions in GaSb may occur along the <111> directions
(A) or at the L point in the BZ and are observed at energies 2.05 eV (E I ), 2.50 eV
(EI+~I)' and -5.4 eV (E I '), respectively. The Eo' and E2 gaps are also found to occur
at energies 3.27-3.85 and 4.08-4.20 eV, respectively. The theoretical values of these
gaps are [5]: 2-22 eV (E I ), 2.67 eV (EI+~I)' 5.43 eV (E I '), 3.44 eV (Eo'), and 4.09
eV (E2 ).

Pikhtin and Yas'kov [10] obtained from the n(E) dispersion analysis the static and
high-frequency dielectric constants of GaSb to be £,=14.8 and £~=13.6, respectively.
227
6
eV L6
L4.5
3
I 0
...... -3
~2L- __~~~~____~__L-____~~
L A r 1:1 X U.K E r
k
Figure B13-1 Electronic energy-band structure of GaSb as calculated by an ENPM. (From
TABLE B13-1 Energies of the CPs and indirect gaps (EBID) in GaSb at 300 K.
CPs,E/D eV
Eo 0.72
EL
g 0.805
EX
g 1.05
Eo+l:1o 1.46
E, 2.05
E,+I:1, 2.50
Eo' 3.27-3.85
E2 4.08-4.20
E,' -5.4
The fundamental lattice reflection band of GaSb was measured by Hass and Henvis
[11] at liquid helium temperature (4.2 K). The reststrahlen parameters determined by
these authors were: ooTQ=230.5±3 cm-', ooLO=240.3±2 cm-', £,=15.69, £_=14.44, and
'Y= 1.61 cm-'.
More recently, the room-temperature optical constants in the reststrahlen region
of GaSb have been measured using a dispersive Fourier transform spectroscopy by
Maslin et al. [12]. The specimen used in this work was nominally undoped single
crystal with a minimum thickness of about 3 mm. Unfortunately, however, they re-
B13 GALLIUM ANTIMONIDE (GaSb) 229
ported only the phonon frequencies of OlTQ=227.5 cm-I and Olw=237.5 cm- I . Using
the Lyddane-Sachs-Teller relation and assuming E~=14.4, we obtain the static di-
electric constant of GaSb at room temperature to be E,=15.7. Using these reststrahlen
parameters and a classical dispersion model, we fit Maslin's (n, k) data and then de-
termined the damping parameter to be ,,(=2.7 cm- I at room temperature. It should be
noted that the phonon frequencies OlTQ and Olw usually decrease with increasing
temperature. The dielectric constants E, and E~ are functions of temperature and usu-
ally increase with increasing temperature. The damping constant "( may also be
strongly dependent on temperature, i.e., it will have larger value at higher tempera-
ture.
The refractive-index dispersion in the transparent region of GaSb has been deter-
mined by several authors [13-17]. Measurement techniques used in these studies
were reflectivity [13-15], prism method [14,17], and SE [16]. Figure B13-2 summa-
rizes the n(E) dispersion of GaSb obtained by these authors [16]. All the samples
studied had p-type conductivity with p-l0 17 cm-3 [13-15] or _lOIS cm-3 [16]. Munoz
Uribe [16] determined the n(E) dispersion in n-GaSb (n-5x10 17 cm-3) and found that
below the band gap the indices are slightly smaller than those for the p-type material.
The resolution in n for the experimental setup was estimated to be ±O.005. The ex-
perimental data reported by Munoz Uribe [17] can be successfully fit to the so-
called single-oscillator model:
eI (E)=I+ E2EE0 d
_E2 (BI3.1)
o
x
Q)
4.4 •
6
Munoz Uribe at al.
Alibert et al (reflectivity)
"'C o Edwards et al (prism)
c: 4.2 <> Edwards et al (refiectivityT
Q) 6
••••• ..... _ Oswald et al (reflectivity)
•••••••••••
.~ 4.0 • 6
6
•••••••••••••••
13
ro 3.8 o o
•
o
6
•
o o o o o
~
~ 3.6
1.75 2_00 2.25 2.50

wavelength(j.lm)
Figure B13-2 Refractive-index dispersion for GaSb. The experimental data are taken from
Oswald and Shade (dashed line, Ref. [13]), from Edwards and Hayne (open circles and dia-
monds, Ref. [14]), from Alibert et al. (open triangles, Ref. [15]), and from Munoz Uribe
(solid squares, Ref. [16]). (From Munoz Uribe et al. [16].)
with Eo=2.17 eV and Ed=28.27 eV.

Optical absorption in the intrinsic absorption edge of GaSb has been studied by
several authors [18-23]. The absorption coefficient a.(E) is found to strongly depen-
dent on the carrier concentration [18,19,22,23]. Sun ~t al. [22] obtained that low-
dopant-concentration p-GaSb samples exhibit the band-gap shrinkage with increas-
ing hole concentration, while the lightly Te-doped n-GaSb samples exhibit an in-
crease in the band-gap energy due to the Burstein-Moss shift with increasing elec-
tron concentration. The samples used in their study were grown by LPE; the lowest
carrier concentrations of p=3.7xlO IS cm-3 and n=5.6xlO ls cm-3 were achieved. Ghez-
zi et at- [21] carried out optical absorption measurements at the fundamental ab-
sorption edge of GaSb (0.7-0.9 eV) at T=9-300 K. The undoped GaSb layers were
grown by MBE on semiinsulating GaAs(lOO) substrates; they showed a p-type con-
ductivity due to the presence of native acceptors (p=1.0-1.3xl0 16 cm-3). Absorption
spectrum of thin-film GaSb in the 1.5-4.1-eV spectral region has also been reported
by Cardona and Harbeke [24].
At 1..>5 11m in n-GaSb, the absorption coefficient increases smoothly as the light
wavelength increases. Becker et al. [18] observed an absorption band between 2 and
5 11m with a peak at 3.3 11m. This absorption band is typical of the D-type intercon-
duction-band absorption [25]. The intervalence-band absorption had also been found
inp-GaSb [18].
The fundamental reflectivity spectra of GaSb have been measured at 297 K in the
0.7-5-eV region by Cardona [26], at room temperature in the 4-6.3-eV region by
Vishnubhatla and Woolley [27], and at 90.5 and 292 K in the 1-6-eV region by
Bachan et al. [19]. Several CPs, such as E I , EI+A I, and E2, have been identified in
these studies. The objective of Refs. [26,27] was an investigation of the electronic
energy-band structure of GaSb, and then no extraction of (n, k) nor (el'~) were ma-
de in these studies. Only Bachan et al. [19] reported the KK-extracted (n, k) and a.
values in graphical form.
The SE e(E)-related data for GaSb have been determined by Aspnes and Studna
[28] in the photon-energy range between 1.5 and 6.0 eV at room temperature. They
obtained a value of k=4.130 at the E2=4.2 eV peak, which is considerably larger than
the KK-analyzed reflectance value (k=3.5) of Bachan et al. [19]. Zollner et al. [9]
have investigated the effects of temperature on e(E) in the temperature range be-
tween lO and 740 K using SE. The CP parameters and their temperature dependence
have been successfully determined from an SCP line-shape analysis of the measured
e(E) data.
More recently, Patrini et al_ [29] have determined the optical functions of bulk
and epitaxial GaSb in the spectral range from 0.0025 to 6 eV by using reflectance
and SE. No significant differences have been evidenced between bulk samples and
epitaxial films, as long as the free-carrier concentrations ranging from 2x10 17 to
5.8xlO 16 cm-3 • The main differences concern with the free-carrier effects, which in-
fluence the far-IR line shapes due to the plasmon-phonon coupling.
The absorption and reflection spectra in the outermost core region (10-170 eV) of
GaSb have been reported by Cardona and coworkers [30-3]. They measured weak
structures at -21 and 33 eV. These structures correspond to transitions at the outer-
most d (Ga) and d (Sb) core levels, respectively.
We list in Table B13-2 the room-temperature values of E=EI+i~, n*=n+ik, a., and
R for GaSb. A set of the optical constants in the IR region (E:50.3 e V) were calculat-
ed using the room-temperature reststrahlen parameters as follows: wTO=227.5 cm"1,
E,=15.7, E~=14A, and "(=2.7 cm"l. The real optical constants (EI' n) for OAQ":50.835
eV were obtained from Eq. (13.1). The imaginary optical constants (k, a.) for
0.7125:5E :50.8375 eV were taken from Ghezzi et al. [21]. A complete set of the op-
tical constants for 1.5:5E:56.0 e V were taken from Aspnes and Studna [28]. The a.
and k values for 1214 eV were obtained from Cardona et al. [31].
The (EI' ~), (n, k), a., and R values in Table B 13-2 are plotted in Figs. B 13-3-
B13-6, respectively. The vertical arrows in the figures indicate the positions of each
CP. The MDF analysis [7,34] suggested that the Eo and Eo+6.0 structures can be
and the Eo' and E2 structures by a DHO (a broadened 2D MI CP).
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13. F. Oswald and R. Shade, Z. Naturf. A 9,611 (1954).
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3208 (1991).
232 Ill-V BINARY SEMICONDUCTORS
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H. Clerice, and N. B. Patel, Mater. Sci. Eng. B 38, 259 (1996).
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19. Z. Bachan, E. Kierzek-Pecold, and J. Kol'odziejczak, Phys. Status Solidi 42,
K101 (1970).
20. A. M. Fox, A. C. Maciel, J. F. Ryan, and T. Kerr, Appl. Phys. Lett. 51, 430
(1987).
21. C. Ghezzi, R. Magnanini, A. Parisini, B. Rotelli, L. Tarricone, A. Bosacchi, and
S. Franchi, Phys. Rev. B 52,1463 (1995).
22. Y.-M. Sun, W.-J. Jiang, and M.-C. Wu, 1. Appl. Phys. 80,1731 (1996).
23. C. Ghezzi, R. Magnanini, A. Parisini, B. Rotelli, L. Tarricone, A. Bosacchi, and
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25. E. Haga and H. Kimura, J. Phys. Soc. Jpn 19, 1596 (1964).
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29. M. Patrini, G. Guizzetti, M. Galli, R. Ferrini, A. Bosacchi, S. Franchi, and R.
Magnanini, Solid State Commun. 101,93 (1997).
Phys. Rev. Lett. 25, 659 (1970).
31. M. Cardona, W. Gudat, B. Sonntag, and P. Y. Yu, in Proc. 10th 1nt. Conf Phys
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Solidi B 52, 505 (1972).
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Commun. 31,99 (1979).
B13 GALLIUM ANTlMONIDE (GaSb) 233
o 1 2 345 6
Photon energy (eV)
Figure B13·3 £1(E) and £iE) spectra for GaSb at 300 K.
5
n
4
~
c 3
1 Eo
GaSb
t
0 1
2 3 4 5 6
Photon energy (eV)
Figure B13·4 nee) and k(E) spectra for GaSb at 300 K.
WTO
GaSb
.1
10-1100 10 1 10 2
Photon energy (eV)
Figure B13·5 aCE) spectrum for GaSb at 300 K.
0.8
E2
0.7 !
Eo'
0.6
E1+A1 !
a: E1 !
0.5 !
Eo
0.4
! GaSb
0.30
1 2 3 4 5 6
Photon energy (eV)
Figure B13·6 R(E) spectrum for GaSb at 300 K.
Table B13-2 Optical constants of GaSb at 300 K.
eV £1 £2 n k <X (em· l ) R
0.Q1 15.89 0.0072 3.986 0.00090 9.lOE-01 0.359
0.02 17.02 0.044 4.125 0.0054 1.09E+01 0.372
0.024 19.11 0.173 4.372 0.020 4.80E+01 0.394
0.026 23.03 0.630 4.799 0.066 1.73E+02 0.429
0.027 29.74 2.095 5.457 0.192 5.25E+02 0.477
0.0272 32.59 2.993 5.715 0.262 7.22E+02 0.494
0.0274 36.73 4.611 6.072 0.380 1.05E+03 0.516
0.0276 43.15 7.950 6.596 0.603 1.69E+03 0.546
0.0278 53.85 16.44 7.422 1.108 3. 12E+03 0.589
0.0279 61.48 26.24 8.010 1.638 4.63E+03 0.618
0.028 68.72 45.60 8.695 2.622 7.44E+03 0.655
0.02805 69.09 61.41 8.987 3.417 9.72E+03 0.677
0.0281 62.52 81.51 9.090 4.483 1.28E+04 0.702
0.02815 43.82 101.2 8.777 5.763 1.64E+04 0.727
0.0282 13.50 109.5 7.869 6.959 1.99E+04 0.752
0.02825 -16.25 99.93 6.519 7.665 2.20E+04 0.774
0.0283 -33.93 79.92 5.143 7.770 2.23E+04 0.790
0.02835 -39.79 60.06 4.016 7.478 2.15E+04 0.802
0.0284 -39.10 44.61 3.180 7.015 2.02E+04 0.809
0.0285 -31.72 25.75 2.137 6.024 1.74E+04 0.815
0.0286 -24.15 16.18 1.569 5.158 1.50E+04 0.811
0.0288 -13.55 7.858 1.028 3.822 1.12E+04 0.780
0.029 -7.184 4.570 0.816 2.802 8.24E+03 0.707
0.0292 -3.079 2.972 0.775 1.918 5.68E+03 0.546
0.0294 -0.243 2.082 0.963 1.081 3.22E+03 0.233
0.0296 1.826 1.538 1.451 0.530 1.59E+03 0.077
0.0298 3.397 1.181 1.870 0.316 9.54E+02 0.103
0.03 4.629 0.936 2.162 0.216 6.58E+02 0.139
0.Q305 6.791 0.575 2.608 0.110 3.4IE+02 0.199
0.Q31 8.191 0.388 2.863 0.068 2. 13E+02 0.233
0.032 9.893 0.211 3.145 0.034 1.09E+02 0.268
0.034 11.54 0.090 3.397 0.013 4.58E+Ol 0.297
0.036 12.34 0.050 3.512 0.0071 2.58E+01 0.310
0.04 13.12 0.021 3.622 0.0029 1.20E+01 0.322
0.05 13.79 0.0060 3.714 0.00080 4.06E+00 0.331
0.06 14.03 0.0026 3.746 0.00035 2.14E+00 0.335
om 14.15 0.0014 3.761 0.00019 1.36E+00 0.336
0.08 14.22 0.00088 3.770 0.00012 9.48E-01 0.337
0.09 14.26 0.00058 3.776 0.000077 7.05E-01 0.338
0.1 14.29 0.00041 3.780 0.000054 5.48E-01 0.338
0.2 14.37 0.000045 3.791 0.0000059 1.20E-01 0.339
0.3 14.39 0.000013 3.793 0.0000017 5.23E-02 0.340
0.4 14.49 3.806 0.341
0.5 14.76 3.842 0.344
0.6 15.11 3.887 0.349
0.7 15.54 3.942 0.354
0.7125 15.60 0.026 3.950 0.0033 2.39E+02 0.355
0.725 15.66 0.190 3.958 0.024 1.76E+03 0.356
0.7375 15.73 0.462 3.966 0.058 4.35E+03 0.357
0.75 15.79 0.530 3.974 0.067 5.07E+03 0.358
Table B13·2 Continued (GaSb).

eV £1 £2 n k a (cm· 1) R
0.7625 15.86 0.585 3.983 0.073 5.68E+03 0.358
0.775 15.93 0.630 3.992 0.079 6.20E+03 0.359
0.7875 16.00 0.672 4.000 0.084 6.70E+03 0.360
0.8 16.07 0.712 4.010 0.089 7.20E+03 0.361
0.8125 16.14 0.744 4.019 0.093 7.63E+03 0.362
0.825 16.22 0.779 4.029 0.097 8.09E+03 0.363
0.8375 16.30 0.807 4.038 0.100 8.49E+03 0.364
1.5 19.135 3.023 4.388 0.344 5.24E+04 0.398
1.6 20.137 3.752 4.507 0.416 6.75E+04 0.409
1.7 21.322 4.503 4.643 0.485 8.36E+04 0.421
1.8 22.826 5.889 4.817 0.611 1.12E+05 0.437
1.9 24.836 8.373 5.052 0.829 1.60E+05 0.458
2 25.545 14.442 5.239 1.378 2.79E+05 0.487
2.1 18.883 16.963 4.705 1.803 3.84E+05 0.474
2.2 17.386 15.794 4.521 1.747 3.90E+05 0.461
2.3 16.980 16.069 4.492 1.789 4.17E+05 0.461
2.4 16.521 17.708 4.513 1.962 4.77E+05 0.473
2.5 13.367 19.705 4.311 2.285 5.79E+05 0.484
2.6 10.676 18.172 3.984 2.280 6.0IE+05 0.470
2.7 9.828 16.966 3.836 2.211 6.05E+05 0.457
2.8 9.484 16.216 3.760 2.157 6. 12E+05 0.449
2.9 9.399 15.810 3.728 2.121 6.23E+05 0.445
3 9.479 15.738 3.732 2.109 6.41E+05 0.444
3.1 9.628 16.070 3.766 2.134 6.7IE+05 0.448
3.2 9.558 16.797 3.800 2.210 7.17E+05 0.456
3.3 9.121 17.658 3.808 2.319 7.76E+05 0.465
3.4 8.490 18.440 3.794 2.430 8.38E+05 0.475
3.5 7.852 19.267 3.785 2.545 9.03E+05 0.485
3.6 7.011 20.306 3.774 2.690 9.82E+05 0.497
3.7 5.853 21.453 3.748 2.862 1.07E+06 0.512
3.8 4.281 22.719 3.701 3.069 1.18E+06 0.530
3.9 2.058 24.057 3.620 3.323 1.3IE+06 0.553
4 ·1.374 25.138 3.450 3.643 1.48E+06 0.583
4.1 -6.203 24.648 3.099 3.976 1.65E+06 0.620
4.2 -10.699 20.831 2.522 4.130 1.76E+06 0.658
4.3 -11.435 15.607 1.989 3.923 1.7IE+06 0.673
4.4 -10.196 12.500 1.723 3.628 1.62E+06 0.665
4.5 -8.989 10.763 1.587 3.392 1.55E+06 0.651
4.6 -8.031 9.642 1.503 3.208 1.50E+06 0.637
4.7 -7.249 8.823 1.444 3.055 1.46E+06 0.623
4.8 -6.594 8.244 1.408 2.928 1.43E+06 0.608
4.9 -6.079 7.846 1.387 2.829 1.41E+06 0.595
5 -5.693 7.529 1.369 2.751 1.39E+06 0.585
5.1 -5.365 7.290 1.358 2.685 1.39E+06 0.575
5.2 -5.156 7.173 1.356 2.645 1.39E+06 0.568
5.3 -5.151 7.099 1.345 2.638 1.42E+06 0.568
5.4 -5.353 6.890 1.298 2.653 1.45E+06 0.578
5.5 -5.527 6.410 1.212 2.645 1.47E+06 0.592
5.6 -5.497 5.866 1.127 2.602 1.48E+06 0.601
5.7 -5.297 5.385 1.062 2.535 1.46E+06 0.602
Table B13-2 Continued (GaSh).
eV £1 £2 n k a (cm· 1) R
5.8 -5.102 5.070 1.022 2.479 1.46E+06 0.601
5.9 -5.002 4.814 0.985 2.444 1.46E+06 0.603
6 -4.962 4.520 0.935 2.416 1.47E+06 0.610
14 0.314 4.45E+05
16 0.219 3.55E+05
18 0.162 2.95E+05
19 0.145 2.80E+05
20 0.149 3.03E+05
20.5 0.138 2.87E+05
21 0.135 2.88E+05
21.5 0.134 2.93E+05
22 0.128 2.85E+05
24 0.087 2. 13E+05
26 0.069 1.82E+05
28 0.061 1.73E+05
30 0.055 1.67E+05
31.5 0.050 1.60E+05
32 0.052 1.68E+05
32.5 0.065 2.15E+05
33 0.064 2. 15E+05
34 0.073 2.50E+05
35 0.067 2.38E+05
40 0.045 1.83E+05
45 0.041 1.88E+05
50 0.043 2. 18E+05
60 0.056 3.40E+05
70 0.062 4.39E+05
80 0.057 4.62E+05
90 0.046 4. 19E+05
100 0.032 3.23E+05
110 0.017 1.90E+05
120 0.010 1.28E+05
130 0.0063 8.25E+04
140 0.0045 6.40E+04
150 0.0052 7.90E+04
155 0.0062 9.75E+04
814 INDIUM NITRIDE
(InN)

Indium nitride (InN), a hexagonal wurtzite III-V semiconductor, has received little
attention in the literature. Indeed, crystals with low electron concentrations and high
mobilities have been reported only recently [1] (see also Ref. [2]). InN has potential
applications in optoelectronics, optical coatings, and various types of sensors. InN is
also known to present electrochromism [3].

InN is a direct-band-gap semiconductor (Eg-2 eV, Ref. [4]). While the electronic
energy-band structures of AIN and GaN have been thoroughly studied, the band
structure of InN is not well understood-having been investigated only recently, with
conflicting results [5-9].
Figure B14-1 shows the electronic energy-band structure of InN as calculated
with the self-consistent orthogonalized LCAO method by Xu and Ching [8]. The
theoretical calculations [5-9] exhibit a direct band gap with the conduction- and va-
lence-band extrema located at the center of the BZ (n. Below the valence-band
maximum at r are maxima at A, M, and H.
The imaginary part of the dielectric function is obtained experimentally from re-
flectance spectra of single-crystalline InN by the KK analysis [10]. The experimen-
tal peaks in E.-z(E) are found to occur at energies 5.0, 7.6, and 8.6 eV. The 5-eV main
peak is assigned to transitions at the r point [5] or considered to originate in the re-
gion near a ~ point close to r [9].

The crystal growth of the group III-V nitrides is very difficult owing to a low dis-
persion temperature. Large single crystals of the III-V nitrides have, thus, not been
obtained; they are usually single-crystalline powders or needlelike polycrystals.
Therefore, most of them are prepared as thin films by rf or dc sputtering. Previous
reports of the optical properties of InN films include studies of optical absorption in
the fundamental-absorption-edge region [11-17], in the near-IR region
[11,14,15,17-20], along with reflectivity measurements in the wavelength ranges
O.5-4llm [14] and 0.1-0.25 Ilm [21], and ER measurements in the 1.1-2.2-eV pho-
ton-energy region [22]. As well, several groups have measured the refractive indices
238
B 14 INDIUM NITRIDE (inN) 239
18
15
12
"...... 6
:>
Q)
'-" 3
:>-< 0
0
0::: -3
Iil Figure B14-1 Electronic en-
Z
rx:l ergy-band structure of InN as
calculated with the self-
consistent orthogonalized
LCAO method. (From Xu
and Ching [8].)
_18~ __ ~ __L -__ ~ __L -__ -L~ __ ~
r K H A r M L A
WAVE VECTOR
in the transparent region [11,14,19,22], ellipsometric data at A=5461 A [3], and SE

spectra in the 2.5-5.5-eV photon-energy region [23]. The high-frequency dielectric
constant has also been reported to be £_=6.6 [19]. Note that the condensates for the-
se InN films were polycrystalline with preferential orientation in the (0001) plane
parallel to the substrates (fused quartz, glass, etc.). One may thus recognize that all
these optical properties and constants reported correspond to those for E.lc (ordi-
nary ray).
Recently, Wakahara and Yoshida [24] have succeed in preparing single-
crystalline InN films on (0001) sapphire substrates by microwave-excited MOCVD.
Using these films, they determined the optical constants of InN by reflectivity meas-
urements [10,25]. The €.-z(E) data determined showed CP peaks at -2 and 5 eV [25].
These authors also determined the temperature dependence of the lowest-direct-
band-gap energy Eo to be given by (0:S;T:S;300 K, in eV) [25]
E (T) :::: 1.958 _ 2.87 x 10-4T2 (B14.1)

o 631+T
The UV reflectivity spectrum measured by Guo et al. [10] in the 2-20-eV region
showed a somewhat different feature from that of polycrystalline sample [21]. In
particular, the absolute reflectivity is considerably larger in the epitaxial film than in
the polycrystalline sample.
Table B 14-1 lists the room-temperature values of £=£I+i~, n*=n+ik, a, and R for
InN with El.c. They were taken from Guo et al. [10]. The (£1' ~), (n, k), a, and R
values in Table B14-1 are graphed in Figs. BI4-2-BI4-5, respectively.
REFERENCES
1. T. L. Tansley and C. P. Foley, Electron. Lett. 20,1066 (1984).
2. S. N. Mohammad, R. A. Salvador, and H. Morko9, Proc. IEEE 83, 1306
(1995).
3. O. Takai, J. Ebisawa, and Y. Hisamitsu, in Proc. 7th Intern. Confer. Vac. Metal.
(Iron and Steel Institute of Japan, Tokyo, 1982), p. 137.
5. C. P. Foley and T. L. Tansley, Phys. Rev. B 33,1430 (1986).
6. D. W. Jenkins, R.-D. Hong, and 1. D. Dow, Superiatt. Microstruct. 3, 365
(1987).
7. M.-H. Tsai, D. W. Jenkins, J. D. Dow, and R. V. Kasowski, Phys. Rev. B 38,
1541 (1988).
8. Y.-N. Xu and W. Y. Ching, Phys. Rev. B 48, 4335 (1993).
9. N. E. Christensen and 1. Gorczyca, Phys. Rev. B 50, 4397 (1994).
10. Q. Guo, O. Kato, M. Fujisawa, and A. Yoshida, Solid State Commun. 83, 721
(1992).
11. H. J. Hovel and J. J. Cuomo,Appl. Phys. Lett. 20, 71 (1972).
12. K. Osamura, K. Nakajima, and Y. Murakami, Solid State Commun. 11, 617
(1972).
13. N. Puychevrier and M. Menoret, Thin Solid Films 36,141 (1976).
14. V. A. Tyagaf, A. M. Evstigneev, A. N. Krasiko, A. F. Andreeva, and V. Va.
Malakhov, Sov. Phys. Semicond. 11, 1257 (1977).
15. T. L. Tansley and C. P. Foley, 1. Appl. Phys. 59, 3241 (1986).
16. K. L. Westra, R. P. W. Lawson, and M. J. Brett, 1. Vac. Sci. Technol. A 6,1730
(1988).
17. T. L. Tansley and R. J. Egan, Thin Solid Films 164,441 (1988).
18. T. L. Tansley and C. P. Foley, 1. Appl. Phys. 60, 2092 (1986).
19. K. L. Westra and M. J. Brett, Thin Solid Films 192,227 (1990).
20. T. L. Tansley and R. J. Egan, Physica B 185, 190 (1993).
21. V. V. Sobolev, S. G. Kroitoru, A. F. Andreeva, and Y. Va. Malakhov, Sov.
Phys. Semicond. 13,485 (1979).
22. V. A. Tyagaf, O. V. Snitko, A. M. Evstigneev, and A. N. Krasiko, Phys. Status
Solidi B 103, 589 (1981).
23. B. T. Sullivan, R. R. Parsons, K. L. Westra, and M. J. Brett, 1. Appl. Phys. 64,
4144 (1988).
B14 INDIUM NITRIDE (inN) 241
24. A. Wakahara and A. Yoshida. Appl. Phys. Lett. 54.709 (1989).

25. A. Wakahara. T. Tsuchiya. and A. Yoshida. Vacuum 41. 1071 (1990).
7
6
5
4
co 3
2
1
0
-1 0 5 10 15 20
Photon energy (eV)
Figure 814·2 £1(E) and £z(E) spectra for InN at 300 K.
3.0
2.5
2.0
..li::
1.5
r:::
1.0
0.5
o 5 10 15 20
Photon energy (eV)
Figure 814·3 n(E) and k(E) spectra for inN at 300 K.
I"
E
S
InN
Elc
Photon energy (eV)

Figure B14·4 aCE) spectrum for InN at 300 K.
InN
Elc
0.2
ex:
0.1
o 5 10 15 20
Photon energy (eV)
Figure 814·5 RCE) spectrum for InN at 300 K.
B14 INDIUM NITRIDE (InN) 243
Table B14·1 Optical constants of InN for E.L cat 300 K.

eV £\ £2 n k a (cm'\) R
2.2 5.918 2.165 2.472 0.438 9.77E+04 0.193
2.3 6.233 2.627 2.549 0.515 1.20E+05 0.207
2.4 6.308 3.340 2.593 0.644 1.57E+05 0.222
2.5 5.694 3.653 2.496 0.732 1.85E+05 0.217
2.6 5.070 3.586 2.375 0.755 1.99E+05 0.206
2.8 4.715 3.445 2.297 0.750 2. 13E+05 0.196
3 4.627 3.338 2.273 0.734 2.23E+05 0.192
3.4 4.569 3.514 2.273 0.773 2.66E+05 0.196
3.8 4.321 3.859 2.249 0.858 3.3IE+05 0.203
4.2 4.045 4.408 2.239 0.984 4. 19E+05 0.218
4.6 3.316 4.934 2.152 1.147 5.35E+05 0.235
5 2.161 5.065 1.958 1.293 6.56E+05 0.249
5.3 1.348 4.794 1.779 1.348 7.24E+05 0.254
5.4 1.075 4.554 1.696 1.342 7.35E+05 0.252
5.8 0.755 3.713 1.507 1.232 7.24E+05 0.227
6.2 0.680 3.227 1.410 1.144 7.19E+05 0.207
6.6 0.769 2.811 1.357 1.036 6.93E+05 0.181
7 1.011 2.673 1.391 0.961 6.82E+05 0.162
7.4 1.045 2.859 1.430 1.000 7.50E+05 0.172
7.6 0.928 2.964 1.420 1.043 8.04E+05 0.182
7.8 0.682 2.923 1.357 1.077 8.52E+05 0.192
8 0.549 2.771 1.299 1.067 8.65E+05 0.191
8.2 0.564 2.650 1.279 1.036 8.61E+05 0.184
8.4 0.527 2.697 1.279 1.054 8.97E+05 0.188
8.6 0.359 2.745 1.250 1.098 9.57E+05 0.202
8.8 0.131 2.617 1.173 1.116 9.95E+05 0.214
9 0.094 2.368 1.110 1.067 9.73E+05 0.206
9.4 0.122 2.128 1.061 1.002 9.55E+05 0.192
9.8 0.081 2.089 1.042 1.002 9.96E+05 0.194
10.2 0.074 1.861 0.984 0.946 9.78E+05 0.185
10.6 0.080 1.742 0.955 0.912 9.80E+05 0.179
11 0.076 1.547 0.901 0.858 9.57E+05 0.171
11.4 0.065 1.291 0.824 0.783 9.05E+05 0.164
11.8 0.073 1.127 0.775 0.727 8.69E+05 0.157
12.2 0.066 1.017 0.737 0.691 8.54E+05 0.156
12.6 0.066 0.920 0.703 0.654 8.36E+05 0.155
13 0.071 0.820 0.669 0.613 8.08E+05 0.154
13.4 0.067 0.724 0.630 0.575 7.81E+05 0.156
13.8 0.068 0.628 0.591 0.531 7.43E+05 0.159
14.2 0.118 0.545 0.582 0.469 6.75E+05 0.145
14.6 0.182 0.484 0.591 0.410 6.06E+05 0.124
15 0.262 0.435 0.620 0.350 5.33E+05 0.097
15.4 0.301 0.390 0.630 0.309 4.83E+05 0.084
15.8 0.371 0.369 0.669 0.276 4.42E+05 0.065
16.2 0.416 0.330 0.688 0.240 3.94E+05 0.053
16.6 0.482 0.315 0.727 0.216 3.64E+05 0.040
17 0.542 0.324 0.766 0.211 3.64E+05 0.031
17.4 0.572 0.332 0.785 0.211 3.73E+05 0.Q28
17.8 0.592 0.350 0.800 0.219 3.95E+05 0.027
18.2 0.612 0.369 0.814 0.227 4.18E+05 0.026
Table 814-1 Continued (InN, E.Lc).

eV El E2 n k a (em-I) R
18.6 0.618 0.376 0.819 0.229 4.32E+05 0.025
19 0.621 0.381 0.821 0.232 4.47E+05 0.025
19.4 0.606 0.390 0.814 0.240 4.71E+05 0.027
19.8 0.576 0.377 0.795 0.237 4.76E+05 0.030
20 0.561 0.368 0.785 0.234 4.75E+05 0.031
815 INDIUM PHOSPHIDE
(lnP)
B1S.1 GENERAL REMARKS

Indium phosphide (InP) and its related alloys InGaAs(P) have received much atten-
tion because of their wide use in the fabrication of laser diodes and detectors op-
erating in the 1.3-1.7-J.lm wavelength region (see Ref. [1]). High-speed electronic
devices, such as heterojunction bipolar transistors and high-electron mobility tran-
sistors are also being realized from InP-related heterostructures (see Ref. [2]). A
review of many physical and semiconducting properties of InP has been given in
Refs. [3-5].
B1S.2 ELECTRONIC ENERGY·BAND STRUCTURE

Figure 15-1 shows the electronic energy-band structure of InP as calculated by an
ENPM by Chelikowsky and Cohen [6]. Table BI5-1 summarizes the experimental
CP and indirect-band-gap energies in InP [5,7] .
.......
-
~
ffi
z Figure 815·1 Electronic
w energy-band structure of
InP InP as calculated by an
ENPM. (From Che·
likowsky and Cohen [6].)
The locations of several
interband transitions are
included by the vertical ar-
rows.
A r 11 X U,K L r
(111) (100) (110)
245
TABLE Bls-l Energies a/the CPs and indirect gaps (E/ D ) in InP at 300 K.
CPs, EgID eV
Eo 1.35
Eo+t'l.o 1.45
ELg 2.05
EXg 2.21
El 3.17
El+t'l.l 3.29
Eo' 4.70
Eo'+~' 4.79
E2 5.10
E2+0 5.69
E l' -6.5
The fundamental absorption edge of InP corresponds to direct transitions from the
highest valence band to the lowest conduction band at the r point in the BZ [Eo
(1.35 eV): rs (rI5)~r6 (r l), Eo+!lo (1.45 eV): r7 (rI5)~r6 (rl)]' The lowest-
indirect-band-gap transitions may occur at 2.05 eV [EgL , rs (rI5)~L6 (L I)]. The indi-
rect E/ transitions [rg (rI5)~~ (XI)] may also occur at energies above EgL. How-
ever, the difference in energy between EgL and E gX is considered to be very small
(-0.16 eV).
The EI and EI+lll transitions may occur along the <111> directions (A) or at the L
point in the BZ [EI (3.17 e V): A4 •5 (A 3) ~ A6 (AI) or L4 •5 (~)~ L6 (Ll ), EI +lll (3.29
eV): A6 (A3)~A6 (AI) or L6 (~)~L6 (L I)]. The Eo' and Eo'+!lo' transitions are ex-
pected to occur at the center of the BZ and at -4.70 eV [rs (r15)~r7 (r15)] and 4.79
eV [rs (rls)~rs (rls )], respectively. A further Eo' transition, found in the calcula-
tion [6], is located along [100] (ll) about 20% of the way to X [Eo'(.1): .1s~.1s].
The E2 transitions are expected to take place along the [110] CE) or near X [X7
(X5)~X6 (XI)], and occur in InP for energies close to the Eo' and Eo'+!lo' CPs
(-5.10 eV). The E 2+0 transitions are thought to occur at the X point and at energies
-5.7 eV [X7 (X5)~X7 (X3)]. The E I ' transitions may also occur near the L point [L4•5
(~)~L6 (~), -6.5 eV (Ref. [8])].

The static and high-frequency dielectric constants, 10, and E~, of InP have been re-
ported by a number of authors [9-13]. Neidert et ai. [9] measured microwave reso-
nant frequencies in semiinsulating InP at 5-18 GHz and obtained an average value
of 10,=12.55 at 300 K. Meiners [10] also obtained a value of 10,= 12.56±O.2 at 300 K
from low-frequency capacitance measurements. Seeger [11] has applied a micro-
wave transmission interference method for the determination of 10, of semiinsulating
InP at T=77 and 300 K. He obtained 10,=12.2 and 12.5 at 77 and 300 K, respectively.
Pikhtin and Yas'kov [12] reported E~ of InP to be 9.3 at 77 K and 9.5 at 298 K.
B 15 INDIUM PHOSPHIDE eInP) 247
Newman [13] determined the values of e,=15 and e~=10.6 for InP from IR reflec-
tance measurements. We note that Newman's values are considerably larger than
those generally accepted (e.g., e~=9.55-9.79, Refs. [14,15]).
Optical properties in the reststrahlen region of InP have been studied by Newman
[13], Hass and Henvis [16], Bairamov et al. [17], and Maslin et al. [18]. The data of
Newman indicated 100% reflectivity at the reststrahlen peak, which is unrealistic.
The data of Hass and Henvis [16] showed too much variation from the simple rest-
strahlen curve. This may be attributable to free-carrier plasma and mechanical pol-
ishing effects [19]. More recently, Bairamov et al. [17] have performed room-
temperature RS and IR reflectivity measurements on semiinsulating InP doped with
Fe and determined the reststrahlen parameters of this material: OlTQ=303.7 cm,t,
OlLO=344.5 cm't, and y=1.9 cm't. From the Lyddane-Sachs-Teller relationship and
using e,=12.50, we obtain e~=9.71, which is in agreement with the generally accept-
ed value (Le., e~=9.55-9,79). Maslin et al. have also determined the IR optical con-
stants of InP by reflection dispersive Fourier transform spectroscopy. They reported
the phonon frequencies OlTQ=304 cm,t and OlLO=346.5 cm't, but not '( value. Optical
absorption at the multiphonon bands has also been investigated by several authors
[13,20,21].
The neE) dispersion data in the transparent region of InP have been reported by
several authors [22-5]. They were obtained by the method of prism minimum de-
viation (Pettit and Turner [22]), by SE (Herzinger et al. [23]), by a grating coupling
technique (Martin et al. [24]), and by means of an integrated optical demultiplexer
in InP (Gini and Melchior [25]). A precision of ±O.003 in the n values is quoted in
Ref. [22]. References [24] and [25] also quote accuracy of 5xlO-4.
The data for n between 0.5 and 1.4 eV by Pettit and Turner [22] were found to fit
to the Sellmeier-type dispersion formula:
n2=A+~ (B15.1)
')}-C
where A=7.255 (7.781), B=2.316 (1.661), C=3.922x107 (4.397x10 7) at T=298 K (77

K) and A is in angstroms. More recent data have been fit to Eq. (15.1) with A=7.194,
B=2.282, and C=4.22x107 (Martin et al. [24], T=300 K) and A=7.233, B=2.34, and
C=3.82x10 7 (Gini and Melchior [25], T=298 K).
Temperature dependence of the refractive index in the transparent region of InP
has been studied both theoretically [26,27] and experimentally [25,28,29] (see Fig.
5.27, Ref. [25]). The effects of n- or p-type doping on the refractive index of InP in
the region of the intrinsic absorption edge have also been studied experimentally by
several authors [24,30-2] (see Fig. 5.31, Ref. [24]).
Optical absorption at the fundamental absorption edge of InP has been studied by
several authors [13,33-5]. The absorption coefficient aCE) is found to strongly de-
pend on the carrier concentration [13,34,36]. Turner et al. [33] observed sharp peaks
due to the n=l discrete excitons for undoped, bulk InP (a net donor concentration of
5xlO t5 cm,3) at 6 and 77 K. From these data, they determined the exciton Rydberg
energies to be 4.0±o.2 meV at 6 K and 3.6±o.4 meV at 298 K. An excitonic structure

has also been observed at the absorption edge of pure epitaxial InP films by Abdul-
laev et al. [35]. The structure was due to the ground (n=l) and excited (n=2 or 3)
states of the discrete excitons. The above-band-edge absorption coefficients
(1.34::;E::;2.0 eV) in doped InP films have also been determined from direct trans-
mission measurements [36].
At A.>21lm in n-InP, the absorption coefficient increases smoothly as a function of
light wavelength that is due to the normal intraband free-carrier absorption [37,38]
(see Fig. 5.35, Ref. [38]). The I-type interconduction-band absorption in n-InP has
been identified at E-0.7-1.3 eV by several authors [34,37,39]. The intervalence-
band absorption has also been observed in p-type InP by Henry et al. [40] and Casey
and Carter [41] (see Fig. 5.37, Ref. [41]).
The fundamental reflectivity spectra of InP have been measured by Cardona
[8,42,43] and Vishnubhatla and Woolley [44]. These spectra revealed distinct
structures at energies of each CP (Eo, Elt Eo', etc.). The In d-electron-related struc-
tures d l and d2 were identified at -10 and 20 eV, respectively [8]. By performing the
KK analysis, Cardona [8] extracted (n, k) values in the 0-20-eV region at 297 K. His
analyzed R(E) spectrum was taken after etching in a IHN03:1HCI solution to re-
move any damage layer and to improve the reflectivity. It has been shown [42] that
the damaged layer, if not removed by etching, greatly decreases the sharpness of the
reflectivity peaks and slightly shifts the position of the maximum toward lower en-
ergies.
The SE e(E)-related data for InP have been reported by Burkhard et al. [45] in the
l.1-3.4-eV range and by Aspnes and Studna [46] in the 1.5-6.0-eV range. Aspnes
and Studna obtained a value of k=3.517 at the Eo'(E2)=4.8 eV peak, which is consid-
erably larger than Cardona's KK-analyzed data of k=3.15 at E-5.0 eV [8]. This indi-
cates that the sample surface of Cardona [8] was not as good as that of Aspnes and
Studna [46]. In fact, Aspnes and Studna [46] took extensive care to avoid both sur-
face damage and unintentional overlayers such as oxides not only in the sample-
surface preparation step but also during SE measurements. Burkhard et al. [45] de-
termined the thickness do. of the temporal growth of the natural oxide layer on InP
and Ga~s using SE. The increase of dox for InP was found to be 3.9 A for every
factor of 10 increase in time when measured in minutes. Lautenschlager et al. [47]
studied the effects of temperature on e(E) of InP in the temperature range between
10 and 740 K using SE. The interband CP parameters and their temperature depen-
dence have been successfully determined from an SCP line-shape analysis of the
measured e(E) data.
Optical properties in the outermost core region (10-170 eV) of InP have been
studied by Cardona and coworkers [48-51]. Weak structures at -19 and 130 eV
were observed in the absorption and reflectivity spectra. These structures correspond
to transitions at the outermost d (In) and p (P) core levels, respectively. These
authors, however, presented experimental data neither in graphical nor in tabular
form [48,49]. Only the absorption data in Ref. [50] are limited to the photon-energy
B15 INDIUM PHOSPHIDE (InP) 249
range of 15-40 eV and are found to be much smaller than those in Ref. [8]. At E=20
eV, for example, the data in Ref. [50] gives a value of a=4.6x105 cm,l (k=0.23),
while a value of a=1.0x10 6 cm,l (k=0,49) was reported in Ref. [8]. The accuracy of
the absolute values of the absorption coefficient in Ref. [50] was reported to be bet-
ter than ±20%.
We list in Table B 15-2 the 300-K values of £=£I+iEz, n*=n+ik, a, and R for InP. A
complete set of the optical constants for E::;;0.3 e V were obtained from the rest-
strahlen parameters of Bairamov et al. [17] (w To=303.7 cm,l, £,=12.50, £~=9.71, and
"(=1.9 cm'I). The real optical constants £1 and n for 0.5::;;£::;;1.38 eV were calculated
from Eq. (BI5.1) with the dispersion parameters of Gini and Melchior [25]. The
imaginary constants k and a for 1.28::;;E::;;1.38 eV were taken from Turner et al. [33].
A complete set of the optical constants for 1.5::;;£::;;6.0 e V and those for 6.5::;;£::;;20 e V
were taken from Aspnes and Studna [46] and Cardona [8], respectively.
The (£1' €z), (n, k), a, and R values in Table B 15-2 are plotted in Figs. B 15-2-
CPo The MDF analysis [7,52-4] suggested that the Eo and Eo+~ structures can be
and the Eo', Eo'+~', E2 , and E2+0 structures by a DHO (a broadened 2D MI CP).
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7408 (1994).
30. M. S. Whalen and J. Stone, f. Appl. Phys. 53,4340 (1982).
31. A. D. Yas'kov, Sov. Phys. Semicond. 17,937 (1983).
32. V. B. Bogdanov, V. T. Prokopenko, and A. D. Yas'kov, Opt. Spectrosc. 62,
551 (1987).
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34. M. Bugajski and W. Lewandowski, f. Appl. Phys. 57, 521 (1985).
35. M. A. Abdullaev, S. I. Kokhanovskii, Yu. M. Makushenko, and R. P. Seisyan,
Sov. Phys. Semicond. 23, 724 (1989).
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38. A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, f. Cryst. Growth 62,
198 (1983).
39. M. R. Lorenz, W. Reuter, W. P. Dumke, R. J. Chicotka, D. G. Pettit, and J. M.
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42. M. Cardona, f. Appl. Phys. 32,958 (1961).
43. M. Cardona, f. Appl. Phys. 32,2151 (1961).
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B15 INDIUM PHOSPHIDE CInP) 251

47. P. Lautenschlager, M. Garriga, and M. Cardona, Phys. Rev. B 36, 4813 (1987).
Phys. Rev. Lett. 25, 659 (1970).
49. M. Cardona, W. Gudat, B. Sonntag, and P. Y. Yu, in Proc. 10th Int. Can! Phys
Solidi B 52, 505 (1972).
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Commun. 31,99 (1979).
54. S. Adachi, lpn. l. Appl. Phys. 28, 1536 (1989).
25
20 Eo+ Ao
InP
15 l
EOl
'" 10
5
0
"1
-5
-10
0 2 4 6 8 10
Photon energy (eV)
Figure B15·2 E1CE) and E2 CE) spectra for InP at 300 K.
..::t:. 3
c
2
o 2 468 10
Photon energy (eV)
Figure B15-3 neE) and k(E) spectra for InP at 300 K.
107~~~~~~~~~~~
106 "'TO
105
1
I"-104
§ 103
---~ 10 2
10 1
InP
10°
10"110-2 10-1 100 101
Photon energy (eV)
Figure B15-4 acE) spectrum for InP at 300 K.
Table B15·2 Continued (InP).

eV tl t2 n k a (cm"l) R
0.03766 -138.3 672.0 16.55 20.30 7.75E+04 0.908
0.03768 -268.2 568.4 13.42 21.17 8.09E+04 0.918
0.0377 -329.1 447.2 10.63 21.03 8.04E+04 0.926
0.03772 -341.9 342.7 8.432 20.32 7.77E+04 0.933
0.03774 -330.5 262.8 6.774 19.40 7.42E+04 0.938
0.03776 -309.4 204.2 5.537 18.44 7.06E+04 0.942
0.03778 -285.8 161.4 4.607 17.52 6.71E+04 0.946
0.0378 -262.9 129.9 3.895 16.68 6.39E+04 0.948
0.0379 -178.2 54.68 2.025 13.50 5. 19E+04 0.958
0.038 ·130.5 29.41 1.279 11.50 4.43E+04 0.963
0.0381 -101.5 18.23 0.901 10.11 3.91E+04 0.966
0.0382 -82.16 12.37 0.680 9.090 3.52E+04 0.968
0.0384 -58.24 6.748 0.441 7.644 2.98E+04 0.971
0.0386 -44.08 4.236 0.319 6.647 2.60E+04 0.972
0.0388 -34.75 2.903 0.246 5.900 2.32E+04 0.973
0.039 -28.14 2.112 0.199 5.308 2.lOE+04 0.973
0.0392 -23.21 1.605 0.166 4.821 1.92E+04 0.973
0.0394 -19.40 1.261 0.143 4.407 1.76E+04 0.972
0.0396 -16.37 1.017 0.126 4.047 1.62E+04 0.972
0.0398 -13.89 0.837 0.112 3.729 1.50E+04 0.970
0.04 -11.84 0.701 0.102 3.442 1.40E+04 0.969
0.041 -5.231 0.345 0,075 2.288 9.51E+03 0.953
0.042 -1.658 0.205 0.079 1.290 5.49E+03 0.888
0.043 0.579 0.135 0.766 0.088 3.85E+02 0.020
0.044 2.110 0.096 1.453 0.033 1.47E+02 0.034
0.045 3.223 0.071 1.795 0.020 9.08E+01 0.081
0.05 6.070 0.025 2.464 0.0051 2.57E+01 0.179
0.06 7.906 0.0074 2.812 0.0013 8.00E+00 0.226
0.07 8.581 0.0034 2.929 0.00058 4.10E+00 0.241
0.08 8.922 0.0019 2.987 0.00032 2.57E+00 0.248
0.09 9.124 0.0012 3.021 0.00020 1.79E+00 0.253
0.1 9.255 0.00080 3.042 0.00013 1.33E+00 0.255
0.2 9.612 0.000079 3.100 0.000013 2.58E-01 0.262
0.3 9.670 0.000022 3.110 0.0000036 1.10E-01 0.264
0.5 9.728 3.119 0.265
0.6 9.803 3.131 0.266
0.7 9.898 3.146 0.268
0.8 10.02 3.165 0.270
0.9 10.16 3.188 0.273
1.0 10.35 3.217 0.276
1.1 10.58 3.253 0.281
1.2 10.88 3.298 0.286
1.28 11.18 0.00020 3.344 0.000030 3.90E+00 0.291
1.29 11.22 0.00057 3.350 0.000085 l.l1E+01 0.292
1.3 11.27 0.0019 3.357 0.00029 3.80E+01 0.293
1.31 11.31 0.0066 3.364 0.0010 1.30E+02 0.293
1.32 11.36 0.021 3.371 0.0031 4.20E+02 0.294
1.33 11.41 0,075 3.378 0.011 1.50E+03 0.295
1.338 11.45 0.362 3.384 0.053 7.25E+03 0.296
1.339 11.45 0.424 3.385 0.063 8.50E+03 0.296
B 15 INDnJM PHOSPHIDE (InP) 255
Table BlS-2 Continued (InP).

eV 10 1 10 2 n k (X (cm· l ) R
1.34 11.46 0.471 3.385 0.070 9.45E+03 0.296
1.345 11.48 0.547 3.389 0.081 1.10E+04 0.297
1.35 11.51 0.555 3.393 0.082 1.12E+04 0.297
1.355 11.53 0.556 3.397 0.082 1.13E+04 0.297
1.36 11.56 0.567 3.401 0.083 1.15E+04 0.298
1.37 11.61 0.591 3.409 0.087 1.21E+04 0.299
1.38 11.67 0.616 3.417 0.090 1.26E+04 0.300
1.5 11.904 1.400 3.456 0.203 3.08E+04 0.305
1.6 11.972 1.509 3.467 0.218 3.53E+04 0.307
1.7 12.022 1.680 3.476 0.242 4. 17E+04 0.308
1.8 12.120 1.889 3.492 0.270 4.94E+04 0.310
1.9 12.284 2.062 3.517 0.293 5.65E+04 0.313
2 12.493 2.252 3.549 0.317 6.43E+04 0.317
2.1 12.734 2.488 3.585 0.347 7.39E+04 0.322
2.2 13.026 2.755 3.629 0.380 8.47E+04 0.327
2.3 13.382 3.060 3.682 0.416 9.69E+04 0.333
2.4 13.812 3.425 3.744 0.457 l.l1E+05 0.341
2.5 14.313 3.904 3.818 0.511 1.30E+05 0.349
2.6 14.899 4.524 3.903 0.580 1.53E+05 0.360
2.7 15.585 5.337 4.004 0.667 1.82E+05 0.372
2.8 16.365 6.482 4.121 0.786 2.23E+05 0.386
2.9 17.188 8.205 4.256 0.964 2.83E+05 0.404
3 17.759 10.962 4.395 1.247 3.79E+05 0.427
3.1 16.483 15.325 4.415 1.735 5.45E+05 0.454
3.2 11.211 17.043 3.976 2.143 6.95E+05 0.458
3.3 7.911 15.797 3.576 2.209 7.39E+05 0.446
3.4 6.639 13.592 3.299 2.060 7.1OE+05 0.419
3.5 6.400 12.443 3.193 1.948 6.91E+05 0.403
3.6 6.312 11.731 3.133 1.872 6.83E+05 0.391
3.7 6.330 11.266 3.103 1.816 6.8IE+05 0.383
3.8 6.432 10.974 3.095 1.773 6.83E+05 0.378
3.9 6.616 10.841 3.108 1.744 6.90E+05 0.376
4 6.874 10.871 3.141 1.730 7.02E+05 0.376
4.1 7.205 11.088 3.196 1.735 7.21E+05 0.380
4.2 7.620 11.539 3.275 1.762 7.50E+05 0.387
4.3 8.119 12.358 3.384 1.826 7.96E+05 0.400
4.4 8.644 13.739 3.527 1.948 8.69E+05 0.419
4.5 8.891 16.161 3.697 2.186 9.97E+05 0.449
4.6 7.484 20.039 3.800 2.637 1.23E+06 0.493
4.7 1.292 22.948 3.484 3.293 1.57E+06 0.550
4.8 -3.469 20.989 2.984 3.517 1.7IE+06 0.577
4.9 -5.868 17.894 2.546 3.514 1.75E+06 0.591
5 -7.678 14.896 2.131 3.495 1.77E+06 0.613
5.1 -7.787 11.483 1.745 3.291 1.70E+06 0.620
5.2 -6.668 9.399 1.558 3.016 1.59E+06 0.601
5.3 -5.654 8.308 1.482 2.802 1.51E+06 0.577
5.4 -4.915 7.717 1.455 2.652 1.45E+06 0.554
5.5 -4.528 7.308 1.426 2.562 1.43E+06 0.542
5.6 -4.280 6.832 1.375 2.484 1.41E+06 0.534
5.7 -3.924 6.317 1.325 2.383 1.38E+06 0.522
Table BlS-2 Continued (InP).

eV £1 £2 n k a (em· 1) R
5.8 -3.509 5.924 1.299 2.280 1.34E+06 0.504
5.9 -3.073 5.680 1.301 2.183 1.31E+06 0.483
6 -2.681 5.644 1.336 2.113 1.29E+06 0.461
6.5 -1.878 5.786 1.450 1.995 1.31E+06 0.419
7 -2.246 4.608 1.200 1.920 1.36E+06 0.437
8 -1.547 2.974 0.950 1.565 1.27E+06 0.392
9 -0.950 2.236 0.860 1.300 1.19E+06 0.332
9.5 -0.778 2.083 0.850 1.225 1.18E+06 0.309
10 -0.725 1.852 0.795 1.165 1.18E+06 0.306
11 -0.415 1.530 0.765 1.000 1.12E+06 0.256
12 -0.239 1.343 0.750 0.895 1.09E+06 0.224
13 -0.129 1.144 0.715 0.800 1.05E+06 0.201
14 -0.020 0.932 0.675 0.690 9.79E+05 0.177
15 0.138 0.741 0.668 0.555 8.44E+05 0.136
16 0.329 0.676 0.735 0.460 7.46E+05 0.087
17 0.458 0.711 0.808 0.440 7.58E+05 0.067
18 0.512 0.761 0.845 0.450 8.2IE+05 0.063
19 0.455 0.784 0.825 0.475 9. 15E+05 0.072
20 0.378 0.776 0.788 0.493 9.99E+05 0.084
816 INDIUM ARSENIDE
(InAs)

Indium arsenide (In As) is a direct-band-gap semiconductor crystallizing in the zinc-
blende structure. The relatively small direct band gap (-0.36 eV at 300 K, Ref. [1])
and resulting high electron mobility (Iln~lx104 cmz/V·s at 300 K, Ref. [1]) have
made this material interesting for use in Hall-effect device applications (see Ref. [2]).
As a substrate, or active layer, InAs can be employed in conjunction with many
semiconductors such as AIGaSb or InAsSb and has interesting heterojunction po-
tential for modulation-doped field effect transistors, lasers and detectors in the
wavelength range up to 10 11m, and quantum-well structures [2].

The electronic energy-band structure of InAs was investigated theoretically by sev-
eral authors [3-6]. We reproduce in Fig. B16-1 the electronic energy-band structure
of In As as calculated by an ENPM by Chelikowsky and Cohen [3]. Table B16-1lists
the CP and indirect-band-gap energies in In As determined experimentally [2,7,8].
In As is a direct-band-gap semiconductor occurring at the r point in the BZ. The
lowest-direct-band-gap energies Eo and Eo+!la of InAs are, respectively, 0.36 e V [rs
(r lS)--"7r6 (rl)] and 0.76 eV [r7 (rlS)--"7r6 (rl)] at room temperature. The lowest indi-
rect-gap transitions may occur at 1.07 eV [EgL , rs (r ls )--"7L6 (L l)]. Thus, the lowest-
lying subsidiary L6 (L l) minima are sufficiently remote in energy from r6 (r l) (-0.7
eV). Theoretically, the lowest r -L conduction-band spacing is 1.16 eV [3] (0.71 eV,
Ref. [5]). Hence, valley transfer effects are not of great significance in carrier trans-
port of n-InAs [9]. The next lowest indirect-gap transitions may occur at 1.37 eV
[E/, rs (rlS )--"7X6 (Xl)]'
The higher interband transition energies E l , EI+LlI , and Ez are, respectively, 2.50
eV [A4 •S (A 3 )--"7A6 (AI) or L 4 •S (~)-7L6 (LI)], 2.78 eV [A6 (A 3)-7A6 (AI) or L6
(~)--"7L6 (L l)], and 4.45 eV [X7 (Xs)--"7~ (Xl)]' The theoretical values of these gaps
are 2.53 eV (E l ), 2.79 eV (El+Ll l), and 4.65 eV (Ez) [3]. The E2+~ and E/ peaks
have also been observed at -5.2 eV [X7 (XS)--"7X7 (X 3 )] and -6.4 eV [L4 •S (~)--"7L6
(~)], respectively.

The static and high-frequency dielectric constants, lOs and £~, of InAs were deter-
257
6
eVI==~
InAs
-9 Xs
-12
L A r X U,K r
Figure B16·1 Electronic energy·band structure of InAs as calculated by an ENPM, (From

Chelikowsky and Cohen [6],) The locations of several interband transitions are included by
the vertical arrows,
TABLE B16·1 Energies o/the CPs and indirect gaps (E/D ) in InAs at 300 K.
CPs, EglD eV
Eo 0.36
Eo+~o 0.76
EL
g 1.07
EX
g 1.37
El 2.50
El+~l 2.78
E2 4.45
E2+0 -5.2
E 1' -6.4
mined to be c,=15,15 and c~=12.25 (T=4.2 K) by Hass and Henvis [10] and
c,=14.55±o.3 and c~=11.8±o.1 (T=300 K) by Lorimor and Spitzer [11]. They were
obtained from IR reflectivity [10] and absorption measurements [11].
The fundamental lattice reflection band of InAs was measured by Hass and Hen-
vis [10] at 4.2 K. A set of the reststrahlen parameters obtained by these authors
were: Ul To=218.9±3 cm· 1 , Ul LO=243.3±2 em-I, c,=15.15, c~=12.25, and )'=1.53 em-I.
B16 INDIUM ARSENIDE (InAs) 259
More recently, the room-temperature optical constants in the reststrahlen region

of InAs have been measured using a dispersive Fourier transform spectroscopy by
Memon et al. [12] and Maslin et al. [13]. The specimens used in these studies were
nominally undoped single crystals with a minimum thickness of about 3 mm. Un-
fortunately, however, these authors did not report a complete set of the reststrahlen
parameters. Only the phonon frequency values of O>To=218.5 cm" and O>LQ=242.5
cm" were reported in Ref. [13].
Using the Lyddane-Sachs-Teller relation and assuming E~= 11.8 (O>To=218.5 cm",
O>LQ=242.5 cm"), we obtain the room-temperature value of E,=14.5. Using these rest-
strahlen parameters and a classical dispersion model, we fit Maslin's (n, k) data and
determined the damping parameter to be )'=4.9 cm" at 300 K. It should be noted that
the phonon frequency usually decreases with increasing temperature. The dielectric
constants E, and E~ are functions of temperature and usually increase with increasing
temperature. The damping constant 'Y may also be strongly dependent on temperature,
i.e., it will have larger value at higher temperature. Note that the peak in k is -8.3
occurring at -219 cm" for Maslin et al. [13] and is -7 occurring at -221 cm" for
Memon et al. [12]: The data of Maslin et al. [13] are preferred. Two-photon absorp-
tion in n-InAs has also been studied using a Fourier transform spectrometer at 15 K
[14].
Free-carrier IR absorption in InAs has been studied both theoretically [15] and
experimentally [16,17]. At "->6 Jlm in n-InAs, the experimental absorption coeffi-
cient a increased smoothly as the light wavelength increased [17]. This absorption
mechanism is due to the normal intraband free-carrier absorption. No interconduc-
tion-band absorption has, however, been found in n-InAs. This is merely due to ex-
tremely large r -L (or r -X) spacing (~0.7 eV) in the conduction band of InAs. In p-
InAs, the intervalence-band absorption has been identified by Matossi and Stern [16].
The intervalence-band absorption maximum near 0.17 e V at 300 K shifted to lower
energies at lower temperatures, and to a stationary value of 0.19 e V above 420 K.
The peak absorption coefficient showed a minimum value (a-24 cm") near 370 K
and increased with increasing and decreasing temperature.
The n(E) dispersion in the transparent region of InAs has been determined from
transmission interference fringes [11]. The InAs sample used was n-type single
crystal with n=2xlO'6 cm,3 and with a thickness of 0.0138 cm. The interference
fringes were obtained from 2690 (0.33) to 320 cm" (0.04 eV). The experimental
data were fitted with the following formula (v in cm"):
n2 = A+ B + C +~ (B16.1)
1- (v / 3920)2 1- (v / 219)2 v 2
where the B term is the contribution from the band edge resonance, the C term is the
contribution from the reststrahlen band, and the D term comes from the free-carrier
susceptibility. The best fit to the experimental data gave A=l1.1±O.l, B=0.71±O.01,
C=2.75±O.2, and D=5.64x104 cm-' [11,18].

Pikhtin and Yas'kov [19] have refitted the data of Lorimor and Spitzer [11] with
an oscillator formula of Eq. (B12.1). The dispersion parameters determined from
this fit are: Eo=0.356 eV, E,=2.2 eV, E2=4.9 eV, E3=2.714xlO-2 eV, G,=28.748 eV2 ,
G2=79.354 ey2, G3 =0.00201 eV2 , andA=1.1732 [19].
Temperature dependence of the refractive index in the transparent region of InAs
has been studied both theoretically [20] and experimentally [21]. The nonlinear in-
tensity-dependent refractive index has also been discussed [22].
Optical absorption at the intrinsic absorption edge of InAs has been studied by
several authors [23-5]. The absorption coefficient 0. was found to strongly depen-
dent on the carrier concentration [23,25]. The lowest carrier density, n=2xlO'6 cm-3 ,
studied in Ref. [23] did not show signs of the Burstein-Moss effect. The n=l dis-
crete-exciton structure has been clearly resolved in 4.2-K absorption spectrum of
InAs [24]. Sample of n-type InAs used in this study had a room-temperature carrier
density of 1.6xlO'6 cm-3 and 77-K mobility of 47500 cm2/V·s. Absorption was
measured in the 0.41-O.43-eV spectral region, but was plotted in relative units [24].
Absorption spectrum of thin-film InAs in the 2.0-3.1-eV spectral region has also
been reported by Cardona and Harbeke [26].
The fundamental reflectivity spectra of InAs have been measured by several
authors [27-30]. By performing the KK analysis, some authors extracted (n, k) val-
ues in the 0-6-eV spectral region (T=300 K, Ref. [27]) and (e,,~) values in the 0-
25-eV region (T=300 K, Ref. [29]). Morrison [27] reported a value of k-2.0 at the E2
peak, which is much smaller than Philipp-Ehrenreich's E2 peak value of k-3.3
(~-20.0) [29]. This indicates that the surface quality of Morrison's sample [27] was
not as good as that of Philipp and Ehrenreich [29].
The SE e(E) spectra for InAs have been measured by Aspnes and Studna [31] in
the spectral range between 1.5 and 6.0 e V at room temperature. SE data are consid-
ered to be more reliable than KK-analyzed reflectance values, since they can be ob-
tained from a more direct determination technique with a few approximations and
assumptions. The SE k value at the E2 peak obtained by Aspnes and Studna [31] was
-3.6, which is considerably larger than Philipp-Ehrenreich's reflectance value
(k-3.3, Ref. [29]). The optical constants for thin strained layers of some III-V semi-
conductors, including InAs, have also been studied by SE and multi-sample analyses
[32]. This study concludes that the apparent optical constants for such very thin lay-
ers can be dependent on thickness and surrounding material, and are generally appli-
cable only for layers found in a similar structural context.
The absorption and reflection spectra in the outermost core region (10-170 eV) of
InAs have been reported by Cardona and coworkers [33-6]. They observed weak
structures at -19, 43, and 142 e V. These structures correspond to transitions at the
outermost d (In), d (As), and p (As) core levels, respectively.
Table B16-2lists the 300-K values of £=E,+i~, n*=n+ik, 0., and R for InAs. A set
of the optical constants in the IR region (ESO.1 e V) were calculated using the room-
temperature reststrahlen parameters as follows: coTQ=218.5 cm-', E,=14.5, e~=11.8,
B16 INDIUM ARSENIDE (InAs) 261
and "(=4.9 cm· l . The real optical constants (£'1' n) for 0.2::;£:50.35 eY were obtained
from Eq. (12.1) (Eo=0.356 eY, EI=2.2 eY, E2=4.9 eY, E3=2.714xlO·2 eY, G I =28.748
ey2, G 2=79.354 ey2, G3=0.0020l ey2, and A=1.1732, Ref. [19]). The imaginary op-
tical constants (k, a) for 0.325:5E :50.85 eY were taken from Dixon and Ellis
(n=2xlO I6 cm·3 , Ref. [23]). A complete set of the optical constants for 1.5::;£:56.0 e Y
were taken from Aspnes and Studna [31 J and those for 6.5::;£:515 e Y were obtained
from Philipp and Ehrenreich [29J. The a and k values for £<::16 eY were obtained
from Cardona et al. [33J.
The (£'1' €.z), (n, k), a, and R values in Table B16-2 are plotted in Figs. BI6-2-
CP. It has been shown [7,8,3 7J that the Eo and Eo+1lo structures are chl!Iacterized by
a 3D Mo CP, the E, and E,+A, structures by a 3D M, (or 2D Mo) CP, and the E2
structure by a DHO (a broadened 2D M, CP).
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14. E. S. Koteles and W. R. Datars, Can. 1. Phys. 54, 1676 (1976).
15. E. Haga and H. Kimura, 1. Phys. Soc. Ipn 19,471 (1964).
16. F. Matossi and F. Stern, Phys. Rev. 111,472 (1958).
17. M.1. Aliev, Kh. A. Khalilov, and G. B. Ibragimov, Phys. Status Solidi B 140,
K83 (1987).
18. E. D Palik and R. T. Holm, in Handbook of Optical Constants of Solids, edited
by E. D. Palik (Academic, Orlando, 1985), p. 479.
20. G. Ghosh,]. Appl. Phys. 79, 9388 (1996).

and L. Schirone,J. Opt. Soc. Am. B 7, 918 (1990).
22. B. Jensen and A. Torabi, J. Opt. Soc. Am. B 2,1395 (1985).
23. J. R. Dixon and J. M. Ellis, Phys. Rev. 123, 1560 (1961).
24. A. V. Varfolomeev, R. P. Seisyan, and R. N. Yakimova, Sov. Phys. Semicond.
9,530 (1975).
25. B. M. Lavrushin, R. F. Nabiev, and Yu. M. Popov, Sov. Phys. Semicond. 22,
441 (1988).
26. M. Cardona and G. Harbeke, J. Appl. Phys. 34, 813 (1963).
30. S. S. Vishnubhatla and J. C. Woolley, Can. J. Phys. 46,1769 (1968).
31. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27,985 (1983).
A. Woollam, J. Appl. Phys. 79, 2663 (1996).
Phys. Rev. Lett. 25, 659 (1970).
34. M. Cardona, W. Gudat, B. Sonntag, and P. Y. Yu, in Proc. 10th Int. Conf Phys
Solidi B 52, 505 (1972).
36. D. E. Aspnes, M. Cardona, V. Saile, M. Skibowski, and G. Sprtissel, Solid State
Commun. 31,99 (1979).
37. X. Y. Gong, H. Kan, T. Makino, T. Yamaguchi, T. Nakatsukasa, M. Kuma-
gawa, N. L. Rowell, A. Wang, and R. Rinfret, Cryst. Res. Technol. 30, 603
(1995).
B16 INDIUM ARSENIDE (!nAs) 263
30
25
Eo+t:.o El
El+t:.l
1 1E2
InAs
20 1 1
15 1Eo
CO
r----·
10
5
0
..- ""
~ 1
-5
-1 0 0~~2:--'---'::4----'-~6--'--8~'--'10
Photon energy (eV)
Figure B16-2 £1(E) and £2(E) spectra for InAs at 300 K.
El+t:.l
5 Eo+t:.o Elll
1 InAs
4 IEo
~ r--"-
C 3
1
.... ','"
0 2 4 6 8 10
Photon energy (eV)
Figure B16-3 neE) and k(E) spectra for InAs at 300 K.
108
107
106 WTO
.;::' 105 !
-{3
I
104
~ 103
InAs
102
10 1
101°0-2 10-1 100 10 1

Photon energy (eV)
Figure B16-4 a(E) spectrum for InAs at 300 K.
0.8
0.7 E2
1 InAs
0.6
E1+A1 E1'
a: E1 1
0.5 Eo+Ao 1
!
0.4 Eo
1 .. '
0.3
2 4 6 8 10
Photon energy (eV)
Figure B16·5 R(E) spectrum for InAs at 300 K.
B16 INDlllM ARSENIDE (InAs) 265
Table 816-2 Optical constants of InAs at 300 K.
eV £1 £2 n k IX (em-I) R
0.01 14.96 0.030 3.868 0.0039 3.97E+00 0.347
0.02 17.80 0.218 4.219 0.026 5.25E+Ol 0.380
0.024 24.41 1.167 4.942 0.118 2.87E+02 0.440
0.025 29.90 2.533 5.473 0.231 5.87E+02 0.478
0.026 44.19 8.895 6.681 0.666 1.75E+03 0.550
0.0262 49.99 12.92 7.128 0.906 2.41E+03 0.574
0.0264 57.76 20.17 7.712 1.308 3.50E+03 0.603
0.0266 67.43 34.65 8.463 2.047 5.52E+03 0.639
0.0267 71.81 47.24 8.882 2.659 7.20E+03 0.661
0.0268 73.18 65.50 9.257 3.538 9.61E+03 0.685
0.0269 66.08 89.73 9.421 4.762 1.30E+04 0.713
0.027 42.92 113.6 9.065 6.265 I.71E+04 0.742
0.0271 5.043 121.3 7.951 7.627 2.lOE+04 0.770
0.02715 -13.69 115.8 7.174 8.072 2.22E+04 0.783
0.0272 -28.78 105.6 6.352 8.314 2.29E+04 0.794
0.0273 -45.25 80.18 4.838 8.286 2.29E+04 0.812
0.0274 -48.32 57.94 3.683 7.867 2.19E+04 0.824
0.0275 -45.39 41.97 2.866 7.321 2.04E+04 0.833
0.0276 -40.61 31.08 2.294 6.773 1.90E+04 0.838
0.0278 -31.18 18.44 1.588 5.805 1.64E+04 0.843
0.028 -23.81 11.99 1.193 5.023 1.43E+04 0.841
0.029 -6.339 2.972 0.575 2.583 7.59E+03 0.749
0.03 -0.084 1.300 0.781 0.833 2.53E+03 0.192
0.031 3.058 0.723 1.761 0.205 6.46E+02 0.081
0.032 4.938 0.459 2.225 0.103 3.35E+02 0.145
0.034 7.072 0.231 2.660 0.043 1.50E+02 0.206
0.036 8.246 0.138 2.872 0.024 8.78E+01 0.234
0.038 8.985 0.091 2.997 0.Q15 5.88E+01 0.250
0.04 9.491 0.065 3.081 0.011 4.26E+01 0.260
0.05 10.67 0.019 3.266 0.0030 1.51E+01 0.282
0.06 11.10 0.0089 3.332 0.0013 8. 11E+OO 0.290
0.07 11.32 0.0049 3.364 0.00073 5.17E+00 0.293
0.08 11.45 0.0030 3.383 0.00045 3.63E+00 0.296
0.09 11.53 0.0020 3.395 0.00030 2.71E+00 0.297
0.1 11.58 0.0014 3.404 0.00021 2. 11E+OO 0.298
0.2 11.75 3.427 0.301
0.21 11.78 3.432 0.301
0.22 11.81 3.436 0.302
0.23 11.84 3.441 0.302
0.24 11.87 3.445 0.303
0.25 11.91 3.451 0.303
0.26 11.95 3.457 0.304
0.27 11.99 3.463 0.305
0.28 12.04 3.470 0.305
0.29 12.10 3.478 0.306
0.3 12.16 3.488 0.307
0.31 12.24 3.499 0.308
0.32 12.34 3.512 0.310
0.325 12.39 0.0018 3.521 0.00025 8.30E+00 0.311
0.33 12.46 0.0036 3.530 0.00051 1.70E+Ol 0.312
Table 816·2 Continued (InAs).

eV £1 £2 n k a (cm· l ) R
0.335 12.54 0.0079 3.542 0.0011 3.80E+01 0.313
0.34 12.65 0.016 3.556 0.0023 7.89E+01 0.315
0.345 12.79 0.037 3.576 0.0051 1.80E+02 0.317
0.35 13.02 0.069 3.608 0.010 3.40E+02 0.320
0.355 0.022 7.81E+02
0.36 0.037 1.35E+03
0.365 0.051 1.90E+03
0.37 0.064 2.40E+03
0.4 0.096 3.90E+03
0.45 0.120 5.47E+03
0.5 0.136 6.89E+03
0.55 0.149 8.31E+03
0.6 0.161 9.79E+03
0.65 0.167 1.10E+04
0.7 0.183 1.30E+04
0.75 0.191 1.45E+04
0.8 0.210 1.70E+04
0.85 0.232 2.00E+04
1.5 13.605 3.209 3.714 0.432 6.57E+04 0.337
1.6 13.884 3.478 3.755 0.463 7.51E+04 0.342
1.7 14.181 3.744 3.798 0.493 8.50E+04 0.347
1.8 14.545 4.083 3.850 0.530 9.68E+04 0.353
1.9 15.Q15 4.481 3.917 0.572 LlOE+05 0.361
2 15.558 5.062 3.995 0.634 1.28E+05 0.370
2.1 16.205 5.820 4.088 0.712 1.52E+05 0.380
2.2 16.957 6.905 4.199 0.822 1.83E+05 0.394
2.3 17.776 8.582 4.331 0.991 2.31E+05 0.411
2.4 18.298 11.458 4.466 1.283 3. 12E+05 0.433
2.5 15.856 15.592 4.364 1.786 4.53E+05 0.454
2.6 12.611 15.160 4.021 1.885 4.97E+05 0.441
2.7 11.229 15.766 3.911 2.016 5.52E+05 0.445
2.8 8.276 16.010 3.626 2.208 6.27E+05 0.448
2.9 6.603 14.211 3.337 2.129 6.26E+05 0.428
3 6.083 13.003 3.197 2.034 6. 19E+05 0.412
3.1 5.831 12.162 3.108 1.957 6.15E+05 0.400
3.2 5.736 11.540 3.051 1.891 6. 13E+05 0.389
3.3 5.735 11.082 3.018 1.836 6. 14E+05 0.381
3.4 5.820 10.753 3.004 1.790 6.17E+05 0.375
3.5 5.973 10.550 3.008 1.754 6.22E+05 0.371
3.6 6.197 10.471 3.030 1.728 6.31E+05 0.370
3.7 6.478 10.529 3.069 1.715 6.43E+05 0.370
3.8 6.835 10.754 3.129 1.719 6.62E+05 0.374
3.9 7.254 1Ll87 3.208 1.743 6.89E+05 0.382
4 7.744 11.919 3.313 1.799 7.29E+05 0.393
4.1 8.273 13.130 3.449 1.903 7.91E+05 0.411
4.2 8.663 15.173 3.615 2.099 8.94E+05 0.437
4.3 8.000 18.639 3.761 2.478 1.08E+06 0.478
4.4 4.024 22.171 3.644 3.042 1.36E+06 0.527
4.5 -1.663 22.006 3.194 3.445 1.57E+06 0.566
4.6 -5.509 19.372 2.705 3.581 1.67E+06 0.593
B 16 INDIUM ARSENIDE (lnAs) 267
Table B16·2 Continued (InAs).
eV £1 £2 n k <X (em· l ) R
4.7 -7.921 15.762 2.204 3.575 1.70E+06 0.617
4.8 -7.961 12.077 1.803 3.349 1.63E+06 0.622
4.9 -6.905 9.909 1.608 3.081 1.53E+06 0.605
5 -5.923 8.752 1.524 2.871 1.46E+06 0.583
5.1 -5.264 8.107 1.484 2.732 1.41E+06 0.565
5.2 -4.942 7.600 1.436 2.646 1.40E+06 0.556
5.3 -4.665 6.980 1.366 2.555 1.37E+06 0.550
5.4 -4.278 6.425 1.312 2.449 1.34E+06 0.537
5.5 -3.851 6.008 1.282 2.344 1.31E+06 0.521
5.6 -3.424 5.738 1.276 2.248 1.28E+06 0.501
5.7 -3.006 5.595 1.293 2.163 1.25E+06 0.479
5.8 -2.642 5.602 1.333 2.102 1.24E+06 0.459
5.9 -2.430 5.764 1.383 2.084 1.25E+06 0.448
6 -2.403 6.055 1.434 2.112 1.28E+06 0.448
6.5 -2.000 6.350 1.526 2.081 1.37E+06 0.430
7 -2.400 5.100 1.272 2.005 1.42E+06 0.446
8 -1.600 3.250 1.006 1.616 1.3IE+06 0.394
9 -0.875 2.475 0.935 1.323 1.21E+06 0.319
10 -0.500 1.925 0.863 1.116 1.13E+06 0.268
11 -0.218 1.403 0.775 0.905 1.0 1E+06 0.219
12 0.026 1.083 0.745 0.727 8.84E+05 0.166
13 0.270 0.863 0.766 0.563 7.42E+05 0.108
14 0.506 0.706 0.829 0.426 6.05E+05 0.060
15 0.686 0.601 0.894 0.336 5. 11E+05 0.034
16 0.260 4.22E+05
17 0.209 3.60E+05
17.5 0.194 3.44E+05
18 0.197 3.59E+05
18.5 0.235 4.40E+05
19 0.236 4.55E+05
19.5 0.248 4.9IE+05
20 0.233 4.73E+05
20.5 0.212 4.40E+05
21 0.207 4.4IE+05
21.5 0.213 4.65E+05
22 0.202 4.50E+05
22.5 0.191 4.35E+05
23 0.170 3.97E+05
24 0.139 3.37E+05
25 0.122 3.09E+05
26 0.116 3.06E+05
27 0.109 2.98E+05
28 0.106 3.01E+05
29 0.105 3.10E+05
30 0.100 3.04E+05
817 INDIUM ANTIMONIDE
(InSb)

Indium antimonide (InSb) has the smallest band gap of any of the III-V semicon-
ductors (Eo-0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor
for use in long-wavelength optoelectronic device applications. Its relatively high
electron mobility (Jln-7xl04 cm2N·s at 300 K, Ref. [1]) makes it an attractive mate-
rial for use in galvanomagnetic and Seebeck device applications. InSb also has the
lowest melting point (Tm=800 K) and largest lattice constant (ao=6.47937 A at
298.15 K) among the III-V semiconductors [1].

The electronic energy-band structure of InSb was investigated theoretically by sev-
eral authors [2-6]. Figure B17-1 shows the electronic energy-band structure of InSb
as obtained with an ENPM [2], corrected in Ref. [3]. The vertical arrows indicate
interband transitions at several CPs (Eo, E I , E 2 , etc.) and indirect gap (EgL ) in the BZ
of InSb. Table B17-1 lists the experimental interband transition energies for InSb
[7,8].
InSb is a direct-band-gap semiconductor occurring at the r point. The lowest di-
rect gap Eo [rs (r1S)~r6 (rl)] is 0.18 eV and its SO-splitting gap Eo+ilo [r7
(rI5)~r6 (rl)] is 0.99 eV at 300 K. The first and second lowest-indirect-band-gap
energies at 300 K are 0.93 eV [E,L, rs (rI5)~4; (LI)] and 1.63 eV [EgX, rs (r1S)~~
(XI)]' respectively. The corresponding theoretical values are [2,3]: 0.25 eV (Eo),
1.07 eV (Eo+ilo), 1.03 eV (EgL), and 1.71 eV (E/).
The Eh EI+~h and EI' transitions in InSb may occur along the <111> directions
(A) or at the L point in the BZ and are observed at 300 K at energies 1.80 eV (E I ),
2.30 eV (EI+~I)' and -5.3 eV (E I '), respectively. The E2 gap is also found to occur
at 3.90 eV. The theoretical values of such CPs are [2,3]: 1.99 eV (E I ), 2.47 eV
(EI+~I)' 5.26 eV (E 1'), and 3.95 eV (E2 ).

Optical properties in the reststrahlen region of InSb have been studied experimen-
tally by Yoshinaga and Oetjen [9], Hass and Henvis [to], Sanderson [11], Gammon
and Palik [12], and Maslin et al. [13]. The data of Hass and Henvis [10] showed too
much variation from the simple reststrahlen curve. Sanderson [11] fitted his meas-
268
B17 INDIUM ANTIMONIDE (InSb) 269
L4,5
4
2
-
~
--2
0
>-
(!J -4
a:
w -6
Z InSb
W -8
-10
-12
L A r X U,K r
Figure B17·1 Electronic energy·band structure of lnSb as calculated by an ENPM. (From
TABLE B17·1 Energies afthe CPs and indirect gaps (E/D ) in inSb at 300 K.
CPs , EgID eV
Eo 0.18
EL
g 0.93
Eo+l1o 0.99
EX
g 1.63
El 1.80
El+111 2.30
E2 3.90
E1' -5.3
ured reststrahlen data using the simple harmonic oscillator model including the free-
carrier plasma contribution:
(17.1)
CO( CO + il)
The reststrahlen parameters fit-determined at 300 K were: £,=17.72, £_=15.68,
coTO=179.1 cm,l, "(=2.87 cm'l, CO p2=1.028X10 5 cm,2, and r=1O.7 cm,l [11]. The 100-
and 373-K values were also reported in Ref. [11]. The sample used in this study was
nearly intrinsic material with n=6xl0!5 cm,3 at low temperature (n=2xlO!6 cm,3 at
300 K). The data of Refs. [11] and [9] were very close except near the reststrahlen
peak region.
Gammon and Palik [12] reported the 300-K reststrahlen parameters for a sample
with n=2xlO!6 cm,3 to be E_=16, ro To=180 cm'!, ro w =190.3 cm'!, y=3.2 cm'!,
ro/=5.81x10 5 cm,2, and r=7.0 cm'!. (Using the Lyddane-Sachs-Teller relationship,
one can obtain E, to be 17.9.) Note that peak values in nand k near roTO are very sen-
sitive to y (Le., nand k have larger peak values when yis smaller). Maslin et al. [13]
also reported the 300-K (n, k) values in graphical form. Their obtained k value at
ro-ro TO is -5.6, which is considerably smaller than the value of k-8.6 obtained by
Sanderson [11]. Optical absorption in the multiphonon-band region has also been
studied by Koteles and Datars [14].
Free-carrier absorption in n-type InSb has been studied both theoretically [15] and
experimentally [16-19]. The absorption coefficient increased smoothly as the light
wavelength increased. This absorption mechanism is due to the normal intraband
free-carrier absorption. The intervalence-band absorption in p-InSb has also been
studied experimentally [20] and theoretically [21]. This type of absorption was pro-
duced by hole transitions between the LH and HH bands, and thus depended
strongly on the hole concentration [20].
The refractive-index dispersion at or below the fundamental absorption edge was
measured by Moss et al. [22] and Valyashko and Gerrmann [23] by means of trans-
mittance interference fringe method. Although not specified, sample in Ref. [22]
was intrinsic and measured at room temperature. Uncertainty in n was reported to be
±O.5. The dependence of neE) on the free-carrier density in n- and p-InSb samples
with different impurity concentrations was studied by Valyashko and Gerrmann [23]
at T=117-395 K. The neE) data of lightly doped samples were found to be different
in the intrinsic and impurity conduction regions that the absolute values of n depend
on the density of free carries of both signs and that these quantities increase with
increasing minority carrier density in the impurity conduction region. An error of !In
was estimated to be ±O.015 that arose from the uncertainty in the interference spac-
ing ~A.=±O.05 11m.
Optical absorption at the fundamental absorption edge of InSb has been studied
by a number of groups [16,18,22,24] (see also Ref. [25]). The absorption coefficient
a was found to strongly dependent on the carrier concentration [16,18]. Note that
the Burstein-Moss effect at the band edge was originally discovered in heavily do-
ped InSb [26,27]. The aCE) data at photon energies well above the fundamental ab-
sorption edge have also been reported by several authors [28,29].
The fundamental reflectivity of InSb has been studied by several authors [30-4].
By performing the KK analysis, some authors extracted (n, k) or (EI> ~) values in the
0-6-eV spectral region (T=300 K, Ref. [30]), in the 1O-26-eV region (T=300 K, Ref.
[32]), and in the 0-25-eV region (T=300 K, Ref. [33]). Morrison [30] obtained a
value of k-1.8 at the E2 peak, which is much smaller than Philipp-Ehrenreich's val-
B17 INDIUM ANTIMONIDE (lnSb) 271
ue of k-3,4 (~-17.5) [33]. This may indicate that the quality of Morrison's sample
surface was not as good as that of Philipp and Ehrenreich.
Aspnes and Studna [35] used SE to determine the optical constants of InSb at
room temperature from 1.5 to 6.0 eV. The SE data were taken on a best-prepared
sample in a flow of dry N2 gas and presented in tabular form. The k value at the E2
peak was -3.7, which is considerably larger than Philipp-Ehrenreich's value (k-3,4,
Ref. [33 D. Logothetidis et al. [36] have studied, using SE, the effects of temperature
on £(E) of InSb in the temperature range between 100 and 740 K and determined the
interband CP parameters and their temperature dependence by performing an SCP
line-shape analysis of the measured £(E) data.
An experimental determination of the optical constants in the outermost core re-
gion (10-170 eV) of InSb has been made by Cardona et al. [37-40]. They observed
weak structures at -18 and 33 eV in the absorption and reflectivity spectra. These
structures correspond to transitions at the outermost d (In) and d (Sb) core levels,
respectively.
Table B17-2lists the room-temperature values of£=£I+i~, n*=n+ik, a, and R for
InSb. A complete set of the optical constants for E~0.04 eV were calculated from Eq.
(17.1) using the reststrahlen parameters of Sanderson [11]. The real optical constants,
£1 and n, for 0.0558~E~0.158 eV and imaginary optical constants, ~ and k, for
0.180~E~,496 eV were taken from Moss et al. [22]. A set of the optical constants
for 0.75~E~1.25 eV and 7~E~13 eV were taken from Philipp and Ehrenreich [33],
while those for 1.5~E~6 eV were obtained from Aspnes and Studna [35]. The a and
k values for D-15 eV were taken from Cardona et al. [38].
The (£1' ~), (n, k), a, and R values in Table B17-2 are graphed in Figs. BI7-2-
B17-5, respectively. The vertical arrows in the figures indicate the positions of each
CPo It has been shown [7,41-3] that such optical spectra can be successfully
explained by the MDF.
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40. D. E. Aspnes, M. Cardona, V. Saile, M. Skibowski, and G. Spriissel, Solid State
Commun. 31, 99 (1979).
42. T. Miyazaki and S. Adachi, Phys. Status Solidi B 163,299 (1991).
43. X. Y. Gong, H. Kan, T. Makino, T. Yamaguchi, T. Nakatsukasa, M. Kuma-
gawa, N. L. Rowell, A. Wang, and R. Rinfret, Cryst. Res. Technol. 30, 603
(1995).
El!
25 Eo+Ao El+Al 1E2
20 1 1 InSb
15
10
5
o
e 1
-5
-100L-~2L-~4L-~6L-~8L-~10
Photon energy (eV)

Figure 817-2 £1(E) and £2(E) spectra for lnSb at 300 K.
6
El
5 o+A) El+Al
1 1 E2 InSb
4 1 El '
~
C 3 1
2
1
n
0 2 4 6 8 10
Photon energy (eV)
Figure B 17 -3 n(E) and k(E) spectra for lnSb at 300 K.
WTO Eo+~o
1 1
Eo
1
InSb
10110- 3 10-2 10-1 100 10 1 102

Photon energy (eV)
Figure B17·4 a(E) spectrum for InSb at 300 K.
0.8 r--"'--r--'--r---r---r---r-~~~
0.7
0.6
0.5
a:
0.4
0.3
0.2
InSb
0.1
o 2 4 6 8 10
Photon energy (eV)
Figure 817·5 R(E) spectrum for InSb at 300 K.
B17 INDIUM ANTIMONIDE (lnSb) 275
Table B17-2 Optical constants of inSb at 300 K.

eV £1 £2 n k ex (em· l ) R
0.001 -554.7 759.2 13.88 27.34 2.77E+03 0.943
0.002 -256.5 181.9 5.382 16.90 3.43E+03 0.934
0.003 -129.0 64.90 2.775 11.69 3.56E+03 0.926
0.004 -71.15 29.49 1.713 8.607 3.49E+03 0.916
0.005 -41.19 15.66 1.200 6.529 3.31E+03 0.899
0.006 -23.95 9.256 0.929 4.981 3.03E+03 0.870
0.007 -13.17 5.908 0.795 3.715 2.64E+03 0.813
0.008 -5.993 3.997 0.778 2.569 2.08E+03 0.681
0.009 -0.963 2.831 1.007 1.406 1.28E+03 0.329
0.01 2.718 2.082 1.752 0.594 6.02E+02 0.116
0.012 7.726 1.233 2.788 0.221 2.69E+02 0.225
0.014 11.08 0.813 3.331 0.122 1.73E+02 0.290
0.016 13.80 0.610 3.715 0.082 1.33E+02 0.332
0.018 16.78 0.583 4.097 0.071 1.30E+02 0.369
0.02 22.52 1.086 4.747 0.114 2.32E+02 0.425
0.021 31.12 2.966 5.585 0.266 5.65E+02 0.486
0.0212 34.68 4.131 5.899 0.350 7.52E+02 0.506
0.0214 39.77 6.226 6.326 0.492 1.07E+03 0.531
0.0216 47.58 10.53 6.939 0.759 1.66E+03 0.564
0.0218 60.25 21.33 7.879 1.353 2.99E+03 0.609
0.02185 64.43 26.48 8.188 1.617 3.58E+03 0.624
0.0219 68.87 33.52 8.528 1.965 4.36E+03 0.640
0.02195 73.16 43.27 8.893 2.433 5.41E+03 0.657
0.022 76.21 56.82 9.254 3.070 6.85E+03 0.677
0.02205 75.60 75.11 9.544 3.935 8.80E+03 0.699
0.0221 66.99 97.51 9.625 5.065 1.13E+04 0.722
0.02215 45.43 118.6 9.285 6.387 1.43E+04 0.747
0.0222 12.09 127.5 8.371 7.615 1.71E+04 0.770
0.02225 -20.87 117.7 7.025 8.380 1.89E+04 0.791
0.0223 -41.71 96.33 5.624 8.564 1.94E+04 0.808
0.02235 -49.79 74.06 4.441 8.338 1.89E+04 0.821
0.0224 -50.12 56.01 3.538 7.915 1.80E+04 0.830
0.02245 -46.97 42.68 2.872 7.431 1.69E+04 0.836
0.0225 -42.66 33.09 2.380 6.951 1.59E+04 0.841
0.0226 -34.06 21.09 1.732 6.088 1.39E+04 0.844
0.0228 -21.47 10.42 1.094 4.761 1.10E+04 0.838
0.023 -13.73 6.148 0.811 3.793 8.84E+03 0.816
0.0232 -8.670 4.060 0.672 3.020 7.lOE+03 0.774
0.0234 -5.144 2.892 0.615 2.350 5.58E+03 0.697
0.0236 -2.556 2.176 0.633 1.719 4. 11E+03 0.550
0.0238 -0.576 1.705 0.782 1.090 2.63E+03 0.283
0.024 0.987 1.379 1.158 0.595 1.45E+03 0.076
0.0245 3.760 0.896 1.953 0.229 5.70E+02 0.109
0.025 5.589 0.643 2.368 0.136 3.44E+02 0.166
0.026 7.876 0.395 2.807 0.070 1.86E+02 0.226
0.028 10.22 0.213 3.197 0.033 9.46E+Ol 0.274
0.03 11.46 0.142 3.386 0.021 6.38E+Ol 0.296
0.04 13.79 0.044 3.713 0.0060 2.43E+Ol 0.331
0.0558 14.48 3.805 0.341
0.0586 14.55 3.814 0.342
Table B17-2 Continued (InSb).

eV £1 £2 n k a (em-I) R
0.062 14.64 3.826 0.343
0.0658 14.77 3.843 0.345
0.0694 14.82 3.850 0.345
0.0731 14.95 3.866 0.347
0.0785 15.00 3.873 0.348
0.0819 15.06 3.881 0.348
0.0892 15.23 3.902 0.350
0.0955 15.30 3.912 0.351
0.103 15.37 3.920 0.352
0.113 15.50 3.937 0.354
0.123 15.63 3.953 0.355
0.138 15.74 3.967 0.357
0.155 15.96 3.995 0.360
0.158 16.01 4.001 0.360
0.18 0.037 6.74E+02
0.182 0.049 9.06E+02
0.185 0.055 1.03E+03
0.188 0.059 l.12E+03
0.191 0.063 1.22E+03
0.194 0.066 1.30E+03
0.197 0.068 1.36E+03
0.2 0.070 1.42E+03
0.203 0.072 1.48E+03
0.207 0.074 1.55E+03
0.248 0.091 2.29E+03
0.275 0.10 2.79E+03
0.31 0.11 3.46E+03
0.354 0.12 4.3IE+03
0.413 0.13 5.45E+03
0.496 0.15 7.54E+03
0.75 16.3 1.28 4.04 0.16 1.20E+04 0.364
1 16.9 1.90 4.12 0.23 2.34E+04 0.372
1.25 17.8 2.58 4.23 0.30 3.85E+04 0.384
1.5 19.105 5.683 4.418 0.643 9.78E+04 0.406
1.6 20.302 6.838 4.568 0.749 1.21E+05 0.421
1.7 21.699 9.019 4.754 0.949 1.63E+05 0.441
1.8 22.148 13.707 4.909 1.396 2.55E+05 0.467
1.9 16.144 16.603 4.433 1.873 3.6IE+05 0.463
2 14.448 14.875 4.194 1.773 3.60E+05 0.443
2.1 13.974 14.643 4.136 1.770 3.77E+05 0.439
2.2 13.674 15.302 4.135 1.850 4. 13E+05 0.445
2.3 12.653 16.936 4.111 2.060 4.80E+05 0.458
2.4 9.377 17.480 3.822 2.287 5.56E+05 0.463
2.5 7.811 15.856 3.570 2.221 5.63E+05 0.447
2.6 7.278 14.787 3.447 2.145 5.65E+05 0.434
2.7 7.069 14.069 3.377 2.083 5.70E+05 0.425
2.8 7.044 13.617 3.345 2.036 5.78E+05 0.419
2.9 7.150 13.395 3.342 2.004 5.89E+05 0.415
3 7.354 13.421 3.366 1.994 6.06E+05 0.416
3.1 7.627 13.779 3.419 2.015 6.33E+05 0.420
Table B17·2 Continued (InSb).

eV 10 1 102 n k ex (em· l ) R
3.2 7.742 14.572 3.482 2.093 6.79E+05 0.431
3.3 7.507 15.631 3.525 2.217 7.42E+05 0.445
3.4 6.782 16.678 3.520 2.369 8.17E+05 0.459
3.5 5.995 17.673 3.511 2.517 8.93E+05 0.474
3.6 4.830 18.854 3.485 2.705 9.87E+05 0.492
3.7 3.147 20.102 3.427 2.933 1.10E+06 0.514
3.8 0.534 21.064 3.287 3.204 1.23E+06 0.541
3.9 -2.838 21.177 3.044 3.479 1.38E+06 0.572
4 -6.722 19.443 2.632 3.694 1.50E+06 0.608
4.1 -8.911 15.595 2.127 3.666 1.52E+06 0.633
4.2 -8.580 12.296 1.791 3.433 1.46E+06 0.634
4.3 -7.678 10.382 1.618 3.209 1.40E+06 0.623
4.4 -6.910 9.191 1.515 3.034 1.35E+06 0.610
4.5 -6.297 8.351 1.443 2.894 1.32E+06 0.598
4.6 -5.788 7.690 1.385 2.776 1.29E+06 0.586
4.7 -5.324 7.160 1.341 2.669 1.27E+06 0.574
4.8 -4.912 6.761 1.312 2.576 1.25E+06 0.562
4.9 -4.534 6.492 1.301 2.495 1.24E+06 0.548
5 -4.250 6.378 1.307 2.441 1.24E+06 0.537
5.1 -4.190 6.600 1.347 2.450 1.27E+06 0.532
5.2 -4.359 6.207 1.270 2.444 1.29E+06 0.543
5.3 -4.505 5.815 1.194 2.435 1.3IE+06 0.555
5.4 -4.487 5.345 1.116 2.394 1.31E+06 0.563
5.5 -4.325 4.931 1.057 2.333 1.30E+06 0.563
5.6 -4.126 4.664 1.025 2.275 1.29E+06 0.558
5.7 -3.995 4.470 1.000 2.235 1.29E+06 0.555
5.8 -3.945 4.282 0.969 2.210 1.30E+06 0.558
5.9 -3.925 4.029 0.922 2.185 1.31E+06 0.565
6 -3.835 3.681 0.860 2.139 1.30E+06 0.572
7 -1.45 3.25 1.03 1.58 1.12E+06 0.379
7.6 -1.10 2.65 0.94 1.41 1.09E+06 0.346
8 -0.97 2.32 0.88 1.32 1.07E+06 0.333
9 -0.53 1.73 0.80 1.08 9.85E+05 0.274
10 -0.23 1.30 0.74 0.88 8.92E+05 0.221
11 0.04 0.99 0.72 0.69 7.69E+05 0.161
12 0.30 0.77 0.75 0.51 6.20E+05 0.097
13 0.50 0.59 0.80 0.37 4.88E+05 0.052
15 0.235 3.58E+05
17.5 0.176 3. 12E+05
18 0.179 3.26E+05
19 0.176 3.39E+05
20 0.161 3.26E+05
20.5 0.157 3.26E+05
21 0.149 3. 18E+05
22 0.127 2.83E+05
24 0.093 2.26E+05
25 0.087 2.21E+05
26 0.083 2.18E+05
27 0.081 2.2IE+05
27.5 0.080 2.23E+05
Table 817·2 Continued (InSb).

eV £1 £2 n k a (cm'l) R
28 0.078 2.21E+05
30 0.072 2.19E+05
31 0.070 2.21E+05
32 0.076 2,45E+05
32.5 0.083 2.73E+05
33 0.084 2.83E+05
34 0.087 3.02E+05
35 0.082 2.90E+05
36 0.Q75 2.75E+05
37 0.069 2.60E+05
39 0.066 2.60E+05
40 0.064 2.60E+05
45 0.065 2.95E+05
50 0.070 3.57E+05
55 0.074 4.15E+05
60 0.073 4,42E+05
65 0.Q75 4.95E+05
70 0.Q75 5.30E+05
80 0.058 4.72E+05
90 0.044 4.03E+05
100 0.032 3.28E+05
110 0.020 2.28E+05
120 0.012 1.50E+05
130 0.0073 9.65E+04
140 0.0050 7.lOE+04
150 0.0044 6.75E+04
160 0.0047 7.60E+04
c
111-V ALLOY SEMICONDUCTORS
C1 GENERAL REMARKS
I SUMMARY OF INTERPOLATION SCHEME
There has been considerable interest in the III-V semiconductor alloys for many device
applications. Literature on the fundamental properties of these alloys is growing rapidly
[1,2]. However, some practical device parameters in these materials have been ham-
pered by a lack of definite knowledge of many material parameters. An interpolation
scheme is a powerful tool for estimating some material parameters of semiconductor
alloys. Although the scheme is still open to experimental verification, it provides more
reliable values over the entire range of alloy composition [3].
If one uses linear interpolation, the ternary material parameter (1) can be derived
from binary parameters (B's) by
TABC(X) =xBAC + (1- X)BBC == a + bx (eLl)

280 ill-V ALLOY SEMICONDUCTORS
for alloy of the form given by A)31-xC, where a=BBC and b=BAc-BBC' Some material
parameters, however, deviate largely from the linear relation of Eq. (CI.I), and have an
approximately quadratic dependence on the mole fraction of one compound x. The ter-
nary parameter, in such a case, can be very efficiently approximated by the relation-
ship:
(C1.2)
where a=BBC' b=BAc-BBC> and C=-CA_B • The parameter c (CA-B) is usually called a
"bowing" or "nonlinear" parameter.
The quaternary material A1_)3xC))I_Y is thought to be constructed of four binaries:
AC, AD, BC, and BD. If one uses a linear interpolation scheme, the quaternary pa-
rameter (Q) can be derived from the binary parameters by
Q(x,y) = (1- x)yBAC + (1- x)(I- y)BAD + xyBBC + x(1- y)BBD (C1.3)
If one of the four binary parameters (e.g., BAD) is lacking, the quaternary parameter
can be estimated from
Q(x,y) =(1- x)BAC + (x + y -1)BBc + (1- y)BBD (CI.4)
The quaternary material A)3yCl_x_yD is thought to be constructed of three binaries:

AD, BD, and CD. The corresponding linear interpolation can be given by
Q(x,y) = XBAD + yBBD + (1- x - y)Bco (C1.5)
If the material parameter can be given by a specific expression owing to some physi-
cal basis, it is natural to consider that interpolation scheme may also be obeyed to this
expression. The dielectric constant e is one such case that follows the Clausius-Mosotti
relation (see Sec. 2.1). Then, the interpolation expression, e.g., for A1-)3xC))l-y alloy
has a form given by
e(x,y) -1 (1
--'-~'--- = - x ) y e(AC) -1 + (1 - x )(1 - y ) e(AD) -1 e(BC)-1
+ xy ---'--'---
e(x,y) - 2 e(AC) - 2 e(AD) - 2 e(BC) - 2
+ x(l- ) e(BD) -I (C1.6)
y e(BD)-2
If relationships for the ternary parameters (Ts) are available, the quaternary
parameter can be expressed either as (Al_)3xCyDl_y)
Q(x,y) = x(l- X)[yTABC(X) + (1- y)TABD(X)] + y(1- y)[xTACO(Y) + (1- x)TBCO(Y)]

x(l-x)+ y(1- y)
C1 GENERAL REMARKS 281
(C1.7)
Q( x,y ) -_ xyTABD(U) + y(l- x - y)TBCO(v) + (1- x - y)xTACO(w) (C1.8)

xy + y(l- x - y) + (1- x - y)x
with
u = (1- x - y) / 2 (C1.9 a)
v = (2 - x - 2 y) /2 (C1.9b)
w=(2-2x-y)/2 (C1.9c)
IT QUATERNARY SYSTEM AND BAND·GAP ENERGY
The lattice constant "a" is known to obey Vegard's law well, i.e., to vary linearly with
composition [see Eqs. (CLl), (C1.3), and (C1.5)]. On the other hand, the band-gap
energy in a ternary semiconductor usually deviates from a simple linear relation of Eq.
(C1.l), and has an approximately quadratic dependence on the mole fraction x. Table
Cl-l summarizes the lattice constants and band-gap energies for some III-V binary
compounds of interest here. Table Cl-2lists the bowing parameters of Eo, Eo+llo, EgX,
and EgL gaps for some III-V ternary alloys.
Introducing the lattice parameters of Table Cl-l into Eq. (C1.3) [Eq. (C1.5)], we can
obtain the lattice matching condition for A1o..BxCPloy quaternary on various III-V bi-
nary substrates in the following form:
TABLE Ct·t Lattice constants and band-gap energies of some Ill-V binary
compounds at 300 K.
Band-Gap Energy (eV)
Binary Eo A_ EX. ELb
'-'0 g &
AlP 5.4625 3.58 0.10 2.48 3.30
AlAs 5.6611 2.95 0.28 2.16 2.36
AlSb 6.1355 2.30 0.72 1.61 2.21
GaP 5.4512 2.74 0.10 2.26 2.63
GaAs 5.6533 1.42 0.34 1.91 1.73
GaSb 6.0959 0.72 0.74 1.05 0.76
InP 5.8688 1.35 0.10 2.21 2.05
InAs 6.0584 0.36 0.40 1.37 1.07
InSb 6.4794 0.18 0.81 1.63 0.93
• r8~~ transitions.
b r8~L6 transitions.
282 III-V ALLOY SEMICONDUCTORS
TABLE Cl-2 Bowing parameters of some lll-V ternary alloys at 300 K.

Bowing Parameter (eV)
Ternary
(Al,Ga)P o o 0.14 o
(Al,In)P o o 0 o
(Ga,In)P 0.5 o 0.18 0.43
(Al,Ga)As 0.37 0.07 0.245 0.055
(Al,In)As 0.24 0.05 0 o
(Ga,In)As 0.6 0.20 1.4 0.72
(Al,Ga)Sb 0.47 0.3 0 0.55
(Al,In)Sb 0.43 0.3 0 o
(Ga,In)Sb 0.42 0.1 0.33 0.38
Al(P,As) o o 0 o
Al(P,Sb) o o 0 o
Al(As,Sb) o o 0 o
Ga(P,As) 0.21 0.03 0.21 0.42
Ga(P,Sb) 2.72 0.66 2.4 2.5
Ga(As,Sb) 1.2 0.61 1.09 1.09
In(P,As) 0.28 0.16 0.28 0.27
In(P,Sb) 1.6 0.95 1.56 1.6
In(As,Sb) 0.58 1.2 0.59 0.57
(C 1.1 0)
x = Ao+BoY (CUI)
Tables CI-3 and 4 list a set of the Ao, Bo, Co, and Do (Ao and Bo) values for various III-
V quaternary systems of types Al"xBxCyDl.y and AxByC1..x.yD (ABxCyDl..x), respectively.
It should be noted that no lattice matching can be achieved between the AlxGayIn1.x.ySb
quaternary and any commercially available III-V binary substrate (GaP, GaAs, GaSb,
InP, InAs, or InSb).
The quaternary band-gap energies, Eo, Eo+~, EgX, EgL, as a function of composition
can be obtained, using the numeric data given in Tables CI-I and CI-2, from Eq.
(C1.7) [or Eq. (C1.8)]. Such band-gap energies will be presented in graphical form in
Sec. C3 and used to calculate the refractive-index dispersion of the quaternary alloys.
III REFRACTIVE INDEX
The refractive-index dispersion, obtained from the simplified interband-transition

C1GENERALREMARKS 283
TABLE Cl-3 Lattice matching conditions between ll/-V quaternaries of

type A1.,/J,.GjJl.y and binary substrates used in Eq. (Cl.lO) at 300 K.
Quaternary Substrate AQ Bo Co Do Remark
Al.Gal",PyAsI.y GaAs 0 0.0078 0.2021 -0.0035 0~1.0
Al.Gal.xAsySb l.y GaSb 0 0.0396 0.4426 0.0318 0~1.0
InP 0.2271 0.0396 0.4426 0.0318 0~1.0
InAs 0.0375 0.0396 0.4426 0.0318 0~1.0
Al.GaIYySbl-y GaAs 0.4426 0.0396 0.6447 0.0283 0~1.0
GaSb 0 0.0396 0.6447 0.0283 0~1.0
InP 0.2271 0.0396 0.6447 0.0283 0~1.0
InAs 0.0375 0.0396 0.6447 0.0283 0~1.0
GaJnl ...p,AsI.y GaAs 0.4051 -0.1896 0.4051 0.0125 0~1.0
InP 0.1896 -0.1896 0.4051 0.0125 0~1.0
Ga.InI.xAsySbl.y GaSb 0.3835 -0.3835 0.4210 0.0216 0~1.0
InP 0.6106 -0.3835 0.4210 0.0216 0.47~1.0
InAs 0.4210 -0.3835 0.4210 0.0216 0~1.0
GaJnl"PySbl.y GaAs 0.8261 -0.3835 0.6106 0.0341 0.52~1.0
GaSb 0.3835 -0.3835 0.6106 0.0341 0~1.0
InP 0.6106 -0.3835 0.6106 0.0341 0~1.0
InAs 0.4210 -0.3835 0.6106 0.0341 0~1.0
Al.InIYyAs I.y GaAs 0.4051 -0.1896 0.3973 0.0090 0.04~1.0
InP 0.1896 -0.1896 0.3973 0.0090 0~1.0
Al.InI..AsySb l.y GaSb 0.3835 -0.3439 0.4210 0.0534 0~1.0
InP 0.6106 -0.3439 0.4210 0.0534 0.48~1.0
InAs 0.4210 -0.3439 0.4210 0.0534 0~1.0
Al.InI",PySb l.y GaAs 0.8261 -0.3439 0.6106 0.0624 0.53~1.0
GaSb 0.3835 -0.3439 0.6106 0.0624 0~1.0
InP 0.6106 -0.3439 0.6106 0.0624 0~1.0
InAs 0.4210 -0.3439 0.6106 0.0624 0~1.0
TABLE Cl-4 Lattice matching conditions between ll/-V quaternaries of type

A,/JyC1.,..jJ (AB,.GjJl.,..y) and binary substrates used in Eq. (Cl.ll) at 300 K.
Quatern!!!I Substrate AQ BQ Remark
Al.Ga"InI.x.yP GaAs 0.5160 -0.9729 0~0.53
Al.Ga"InI.x.,As InP 0.4680 -0.9807 0~0.48
AlP.AsySb l.x.y GaAs 0.7165 -0.7049 0~0.96
InP 0.3963 -0.7049 0~0.56
InAs 0.1146 -0.7049 0~0.16
GaP.AsySb l.x.y GaAs 0.6865 -0.6865 0~1.0
InP 0.3523 -0.6865 0~0.51
InAs 0.0582 -0.6865 0~0.085
InP.AsySb l.x.y GaSb 0.6281 -0.6895 0~0.911
InAs 0.6895 -0.6895 0~1.0
model, can be written as [see Eq. (5.67)]
F C'E CI E2
+ o-3D-ex- In 0 + B' (C1.12)
G E 2 E; _E2
with
!(Xo) = X~2[2 - (1 + Xo)1I2 - (1- Xo)1I2] (C1.13a)
! (Xso) =X;[2 - (1 + X.o)1I2 - (1- X.o)1I2] (C1.13b)
Xo =E I Eo (C1.13c)
Xso =E I (Eo + llo) (C1.13d)
where Ao', FoD', and Foc> represent the strength parameters of the EoI(Eo+Ilo)-gap one-
electron (free electron-hole pair), discrete-exciton, and continuum-exciton transitions,
respectively, and B' corresponds to the nondispersive contribution arising from the
higher-lying gaps (EI' EI+lll , Eo, Ez, etc.).
Notice that that the excitonic effects are considerably weaker in III-V semiconduc-
tors than in II-VI semiconductors. We can, therefore, successfully neglect the exciton
contributions and thus
(C1.14)
The parameters Ao' and B' can be determined by fitting Eq. (C1.14) with the experi-
mental data.
We list in Table CI-5 the values of Ao' and B* required to fit the experimental III-V
binary data to Eq. (C1.14). The n(E) curves calculated from these dispersion parame-
ters are shown in Fig. Cl-l. The previous studies [4,5] showed that the values of Ao'
and B* vary almost linearly with composition for such semiconductor alloys as AlzGa l_
zAs and Inl_zGa~s»I_Y' Based on this fact, the alloy values of Ao' and B' can be suc-
cessfully obtained from the numerical solutions of Eq. (C1.1) or Eq. (C1.3) [Eq.
(C1.5)], using the binary values listed in Table CI-5.
C1 GENERAL REMARKS 285
TABLE Cl-5 Dispersion parameters usedfor calculation ofn(E) from Eq. (Cl.14).
Binary Ao· B·
AlP" 18.39 -0.74
AlAs b 25.30 -0.80
AlSb c 59.68 -9.53
GaP d 14.71 4.38
GaAs' 6.30 9.40
GaSb c 4.05 12.66
Inp! 8.40 6.60
InAs c 5.14 10.15
InSb c 7.91 13.07
"B. Monemar, Solid State Commun. 8, 1295 (1970).
bR. E. Fern and A. Onton,]. Appl. Phys. 42, 3499 (1971).
cB. O. Seraphin and H. E. Bennett, Semiconductors and Semimetals, edited by R. K.
Willardson and A. C. Beer (Academic, New York, 1967), Vol. 3, p. 499.
dK. Strtissner et al., Phys. Rev. B 32, 6614 (1985) .
• H. C. Casey, Jr. et al., Appl. Phys. Lett. 24, 63 (1974).
I G. D. Pettit and W. J. Turner, J. Appl. Phys. 36, 2081 (1965).
6.0
5.5 AlSb
5.0
4.5
C
AlP
3.5
3.0
2.5
0 2 3 4
fH\) (eV)
Figure Cl-l Refractive-index dispersion of some llI-V binaries calculated from Eq. (Cl-14).
REFERENCES
1. H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Academic, New York,
1978), Parts A and B.
2. A.-B. Chen and A. Sher, Semiconductor Alloys: Physics and Material Engineer-
ing (Plenum, New York, 1995).
3. S. Adachi, Physical Properties of Ill-V Semiconductor Compounds: InP, lnAs
4. S. Adachi, J. Appl. Phys. 58, Rl (1985).
5. S. Adachi,]. Appl. Phys. 53, 5863 (1982).
C2 TERNARY ALLOYS
Group-III nitrides are promising candidates as materials for fabrication of short-

wavelength light emitting devices, because the wunzite polytypes of InN, GaN, and
AIN form a continuous alloy system whose direct-band-gap energy ranged from 1.9 eV
for InN, 3.4 eV for GaN, and to 6.2 eV for AIN.
IR reflection spectroscopy has been applied to AlxGa1_.N films deposited on sapphire
substrates [1,2] and (ooOl)-oriented 6H-SiC substrates [3] by MOVPE. These studies
demonstrated the sensitivity afforded IR reflectivity measurements in determining the
optical phonon frequencies in GaN (AIN) and AlxGa1_xN alloy.
The n(E) data at around A.=0.37 Ilm for GaN and AlxGa1_.N (.x=O.15) films were
measured by Amano et al. [4] using SE. The epitaxial films were grown by MOVPE
with their (0001) plane parallel to the sapphire substrates. Although not specified, the
optical data were for El.c polarization. At the band-gap energy of GaN 0"g-O.37 Ilm),
the refractive index of GaN was larger than that of Alo.1Gao.9N by about 0.2, which is
promising for the confinement of UV light in the neighborhood of the GaN active re-
gion in GaN/AlxGa1_.N heterostructure devices. Relying on observations in AlxGa1_.N
(0~1.0), to a first approximation, Mohammad et al. [5] simply applied a rigid shift to
the refractive index vs. energy curve obtained for GaN [6] by matching the band edge
of the alloy. Their obtained n curves are found to be in excellent agreement with that
reported by Amano et al. (Alo.1Gao.9N, Ref. [4]) and that available for AIN (.x=1.0, Ref.
[7]). Bougrov and Zubrilov [8] also obtained, using the essentially same scheme as that
of Mohammad et al., the refractive-index curves of GaN and its Al and In ternary al-
loys and simulated waveguiding properties of Ga)nl_.N/GaN/AlxGa1_xN double heter-
ostructures. We reproduce in Fig. C2-I-1 the n(E) dispersion curves obtained by Bou-
grov and Zubrilov [8].
More recently, Brunner et al. [9] have studied the absorption edge and refractive in-
dex of wunzite AlxGa1_.N films on composition and temperature using transmission and
photothermal deflection spectroscopy. The alloy films (x=0-1.0) were grown by
plasma-induced MBE on (0001) sapphire substrates. We reproduce in Fig. C2-I-2 the
n(E) dispersion data obtained by these authors [9]. It is found that the n(E) data for .x=0
(GaN) and 0.1 are in excellent agreement with the results of Amano et al. [4]. For
0.7<x<1.0 there is a tendency that the experimental refractive indices are too low, most
probably due to a decrease of the effective film density compared to an ideal crystal. A
decrease in the index of refraction, for example, from 2.05 to 2.00 would require a den-
287
X
2.9 %AIN: 1
GaN
%InN:
~ 10 5 0 5 10
~ 2.8 Figure C2-I-l Refractive indices of
g2 GaN and its AI and In ternary alloys
at room temperature. The curves for
~ 2.7
GaN and 10% AlN correspond to
U
the experimental data of Amano et
~ 2.6 at. [4], while the other curves are
obtained by applying a rigid shift of
~ the GaN curve to match the alloy's
2.5 band gap. (From Bougrov and Zu-
brilov [8].)
2.4 L-J'--'--'.--L--L--'--'--'--'--1-..L-.L-.~L-J
300 350 400 450
WAVELENGTH ( nm )
2.8,.-----------------,
x= 0
2.6
c::
)( 2.4
GI
'C
-=
GI
>
~
f
'lii 2.2
a:
2.0 Al xG8 1. xN
Figure C2-1-2 Refractive
indices of AIxGal.xN films T=300K
grown on (0001) sapphire
substrates. (From Brunner
et at. [9].)
1.8 ..J...--~_+_-~_I--'--+_~-_t_-~_j
1.0 2.0 3.0 4.0 5.0 6.0
Photon Energy leV]
C2 TERNARY ALLOYS 289
sity deficit of approximately 2%. The effects of the density deficit on the optical prop-
erties of epitaxial GaN films have been discussed in more detail in Ref. [10].
Optical absorption at the fundamental absorption edge of epitaxial AlxGa1.xN films
has been studied by a number of authors [9,11-15]. Figure C2-I-3 shows, as an exam-
ple, the absorption coefficient squared as a function of photon energy as measured by
Wickenden et al. [15]. The (OOOI)-plane AlxGal.~ layers were grown by low-pressure
MOCVD on sapphire substrates. The a(E) spectra did not exhibit large low-energy
tails observed in other studies [11,13], indicating that there were minimal macroscopic
nonuniformities in the alloy samples. The a(E) spectra of AlxGal.~ alloy at high ab-
sorption region (E>-EJ were also found to be nearly the same as that of GaN [9,14].
40
0.00 0.06 0.18 0.20 0.28 0.37

.-...
30
~
E
()
CD
,.... 20
0
x
---
N
C
10
o~--~--~--~-*~~~~--~~~
3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6
Energy (eV)
Figure C2·I·3 Absorption coefficient squared (cr) as a function of photon energy for AlxGal..N
with x<OA measured at room temperature. (From Wickenden et al. [15].)
Edwards et al. [16] used SE to assess the preparation of smooth and abrupt GaN,
AlN, and AlxGa1.xN surfaces by wet chemical etching in real time. The epilayers stud-
ied were grown on 6H-SiC(0001>Si substrates by MOVPE. The SE £(E) spectra for
Alo.4sGllo.ssN (and GaN) before and after chemical treatment were presented in graphi-
cal form. The oscillations found in the low-energy region originated from multiple in-
ternal reflections in the epilayers where they were effectively transparent. Because of
the limited spectral range (1.5Q:S;5.75 eV), only the lowest-direct-band edge could be
recognized as the CP structure in their measured £(E) spectra.
More recently, Wethkamp et al. [17] have measured the pseudodielectric-function
spectra <£2(E» using SE in the 3-25-eV region of hexagonal AlxGa1.xN (O::;;XS:1.0)
grown on (0001) sapphire substrates. Figure C2-I-4 shows their measured pseudodi-
x(%)
AI.~ ~100
~; ----- 86
~77
~..l ---63
1\
w'"
~61
v
~O
~33
~17
10
~~
3 4 5 6 7 8 9 11 12 13 14 15 16 17 18
energy (eV)
Figure C2-I-4 Pseudodielectric-function spectra <q(E» of hexagonal Al.Gal..N films grown
on (0001) sapphire substrates. Data sets are shifted for clarity and multiplied by 5 above 11 eV.
(From Wethkamp et al. [17].)
electric-function spectra [17]. A systematic parabolic shift of Eo towards higher energy

is found with increasing AI content, while higher interband transitions tend to show a
linear shift.
REFERENCES
1. C. Wetzel, E. E. Haller, H. Amano, and I. Akasaki, Appl. Phys. Lett. 68,2547
(1996).
2. G. Yu, H. Ishikawa, M. Umeno, T. Egawa, J. Watanabe, T. Soga, and T. Jimbo,
Appl. Phys. Lett. 73, 1472 (1998).
3. P. Wisniewski, W. Knap, J. P. Malzac, J. Camassel, M. D. Bremser, R. F. Davis,
and T. Suski,Appl. Phys. Lett. 73,1760 (1998).
4. H. Amano, N. Watanabe, N. Koide, and I. Akasaki, lpn. l. Appl. Phys. 32, L1000
(1993).
5. S. N. Mohammad, A. A. Salvador, and H. Morkoc;, Proc. IEEE 83,1306 (1995).
6. M. E. Lin, B. N. Sverdlov, S. Strite, H. Morkoc;, and A. E. Drakin, Electron. Lett.
29,1759 (1993).
7. J. Pastrihik and L. Roskovcova, Phys. Status Solidi 14, K5 (1966).
8. V. E. Bougrov and A. S. Zubrilov, l. Appl. Phys. 81, 2952 (1997).
9. D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. HopIer, R. Dimitrov, O.
Ambacher, and M. Stutzmann, l. Appl. Phys. 82, 5090 (1997).
10. T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka, l. Appl. Phys.
82,3528 (1997).
11. J. Hagen, R. D. Metcalfe, D. K. Wickenden, and W. Clark, l. Phys. C: Solid State

Phys. 11, L143 (1978).
12. S. Yoshida, S. Misawa, and S. Gonda, l. Appl. Phys. 53,6844 (1982).
13. Y. Koide, H. Ithoh, M. R. H. Khan, K. Hiramatu, N. Sawaki, and I. Akasaki, l.
Appl. Phys. 61,4540 (1987).
14. I. Akasaki and H. Amano,l. Electrochem. Soc. 141, 2266 (1994).
15. D. K. Wickenden, C. B. Bargeron, W. A. Bryden, J. Miragliotta, and T. J. Kis-
tenmacher, Appl. Phys. Lett. 65, 2024 (1994).
16. N. V. Edwards, M. D. Bremser, T. W. Weeks, Jr., R. S. Kern, R. F. Davis, and D.
E. Aspnes, Appl. Phys. Lett. 69, 2065 (1996).
17. T. Wethkamp, K. Wilmers, N. Esser, W. Richter, O. Ambacher, H. Angerer, G.
Jungk, R. L. Johnson, and M. Cardona, Thin Solid Films 313·314, 745 (1998).
The electronic energy-band structure of Ga)nl_..N alloy has been studied theoretically
using an empirical tight-binding scheme [1]. The alloy dependence of the lowest-
direct-band gap and electron effective masses has been reported in this study.
IR reflectivity measurements on polycrystalline Ga)n1_xN films have been performed
by Osamura et al. [2]. The resultant KK analysis suggested that this alloy system shows
a one-mode behavior of the long-wavelength optical phonons. The measured reflectiv-
ity spectra, however, showed too much variation from the simple reststrahlen curve,
especially for smaller x samples.
Optical absorption studies have been performed on polycrystalline (OSx:S;1.0, Ref.
[3]) and epitaxial Ga)nl_..N films (OSx:S;0.42, Ref. [4]). The samples used in these
measurements were grown by electron-beam plasma technique [3] and MOVPE [4],
respectively. We show in Fig. C2-II-l the experimental data of Nagatomo et at. [4].
Although not specified, these data were for E.lc polarization. The data showed a re-
markable tail along the low-energy side at the fundamental absorption edge with in-
creasing x. This may be caused by the crystalline imperfections.
No experimental data on the refractive index of GaxInt_xN alloy are available at pres-
ent. Relying on observations, to a first approximation, Mohammad et at. [5] simply
r--.
('oJ
I
E
u 10
<Xl
0
- X
x=1.0
--
.........
N
C
ClI
.~
'+-
'+-
ClI 5
0
U
C
--
0
0.
I-
0
Vl
.0
«
0
2 3 4
Photon Energy (eV)
Figure C2·II·l Absorption coefficient squared (a2) as a function of photon energy for G~Inl_
xN with x::::O.58 measured at room temperature. (From Nagatomo et at. [4].)
292
applied a rigid shift to the refractive index vs. energy curve obtained for GaN [6] by
matching the band edge of the Ga)nl_..N alloy. Bougrov and Zubrilov [7] also obtained,
using the essentially same scheme as that of Mohammad et al., the n(E) curves of GaN
and its In and AI ternary alloys and simulated wave guiding properties of Ga)nl_
..N/GaN/AI..Gal_..N double heterostructures. The results obtained by Bougrov and Zu-
brilov [7] are reproduced in Fig. C2-I-1.
REFERENCES
1. T. Yang, S. Nakajima, and S. Sakai, Jpn. J. Appl. Phys. 34, 5912 (1995).
2. K. Osamura, S. Naka, and Y. Murakami, J. Appl. Phys. 46,3432 (1975).
3. K. Osamura, K. Nakajima, Y. Murakami, P. H. Shingu, and A. Ohtsuki, Solid
State Commun.ll, 617 (1972).
4. T. Nagatomo, T. Kuboyama, H. Minamino, and O. Omoto, Jpn. J. Appl. Phys. 28,
L1334 (1989).
5. S. N. Mohammad, A. A. Salvador, and H. Mork~, Proc. IEEE 83, 1306 (1995).
6. M. B. Lin, B. N. Sverdlov, S. Strite, H. Mork~, and A. B. Drakin, Electron. Lett.
29,1759 (1993).
7. V. E. Bougrov and A. S. Zubrilov, J. Appl. Phys. 81, 2952 (1997).
The Al..Ga1.)' alloy system is one of the least studied III-V alloy systems. Because AlP
and GaP are indirect-band-gap semiconductors, their alloys are expected to have indi-
rect gaps as the lowest band edge in the whole composition range (0~1.0). The com-
position dependence of the indirect-absorption-edge energy for Al..Ga1.), alloy has
been reported by several authors [1,2]. The x dependence of the direct-band-gap ener-
gies has also been studied using electrolyte ER [3,4] and SE [5].
The refractive-index data at several wavelengths for Al..Ga1.)' (O<x<O.3) have been
measured by Dias et al. [6]. Samples of Al..Ga1.)' were grown on GaP substrates by
LPE. The n data were measured by a phase diffraction grating method. The n values
obtained from this study were presented in Table C2-III-1.
TABLE C2-III-l Room-temperature refractive indices at several wave-

lengthsfor AI.Gal ..£' (O<x<03) as measured by Dias et al. [6J. See also Ta-
ble Bll-3for GaP (x=O) and Table B6-1 for ALP (x=l.O).
n
eV A. (l!:!!!) x=O.l x=O.2 x=O.28
1.075 1.153 3.060 3.025 2.990
1.959 0.6328 3.253 3.209 3.160
2.081 0.5955 3.300 3.253 3.193
Rodriguez and Armelles [5] have determined e(E) spectra for Al..Ga1.), (x=O, 0.10,
0.30,0.43, 0.49, and 0.53) using SE in the photon-energy range of 1.5-4.5 eV. The
epitaxial layers were grown on GaP(100) substrates by MOCVD. Their thickness was 5
!lm. Figure C2-III-l shows the results of this study [5]. (Note that the e values in Fig.
C2-III-l were plotted with "arbitrary units," not absolute values.) By analyzing the
numerically calculated second-derivative spectra of e(E), they also reported the x de-
pendence of the Eo and E\ gaps [5].
REFERENCES
1. H. Sonomura, T. Nanmori, and T. Miyauchi,Appl. Phys. Lett. 24,77 (1974).
2. V. N. Bessolov, E. S. Dobrynina, V. I. Petrov, and Yu. P. Yakovlev, Sov. Phys.
Semicond. 15,395 (1981).
3. D. P. Bour, J. R. Shealy, A. Ksendzov, and F. H. Pollak, f. Appl. Phys. 64, 6456
(1988).
4. J. M. Rodriguez, G. Armelles, and P. Salvador, f. Appl. Phys. 66,3929 (1989).
5. J. M. Rodriguez and G. Armelles, f. Appl. Phys. 69, 965 (1991).
6. P. Dias, V. A. Mishurnyi, E. L. Portnoi, B. S. Ryvkin, and V. B. Smirnitskii, Sov.
Tech. Phys. Lett. 3,290 (1977).
294
--
rJ)
'::lc
en
.....
'c::l
--
.ci
....
--'"
.ci
....
CU CU
( \J
'"
ENERGY (eV) ENERGY(eVI
Figure C2-ill-l e(E) spectra for Al.Ga1.•P with (a) x=O, (b) x=O.10, (c) x=0.30, (d) x=O.43, (e)
x=0.49, and (1) x=O.53 measured at room temperature. (From Rodrfguez and Armelles [5].)
In early work on Al)nl.J', the direct r gap (Eo) was measured and found to vary line-
arly with composition x [1]. More recently, Bour et al. [2] obtained from electrolyte ER
measurements a concave upward bowing in the Eo gap, similar to the behavior found in
other ternary alloys.
Al)nl.J' alloy can be epitaxially grown on GaAs with x-O.5, only, since the lattice
constant of GaAs is between the values of the two binary parents AlP and InP. Optical
properties of Al,Inl.J' are not well known, except for AIo.5lno.5P (x-0.5). Data on the
optical constants of Alo.slnO.5P will be presented in Sec. C3-X as an end-point material
of the AlxGllyln1.x.),/GaAs quaternary system.
REFERENCES
1. A. Onton and R. J. Chicotka, f. Appl. Phys. 41, 4205 (1970).
2. D. P. Bour, J. R. Shealy, G. W. Wicks, and W. J. Schaff, Appl. Phys. Lett. 50,615
(1987).
296
Ternary alloy Ga)nl_J' can be epitaxially grown on GaAs with x-0.5, only, since the
lattice constant of GaAs is between the values of the two binary parents GaP and InP.
Detailed optical properties of Ga)nl_..p are not well known, except for Gao.sInO.5P
(x-O.5). In Sec. C3-X, we will present the optical-constant data of Gao.5InO.5P as an end-
point material of the AlxG~Inl-x-~/GaAs quaternary system.
The main activity in III-V semiconductor alloys has been determining the composi-
tion variation of the fundamental absorption gaps or, more generally, of three conduc-
tion-band states-r6c, ~c, and L6c-relative to the top of the valence band rsv, and the
crossing of the direct and indirect band gaps (see, e.g., [1]). The most recent study on
Ga)nl_..p alloy at 300 K [2] suggests a direct (r6C)-indirect (L/) crossover occurring at
xc=0.67±O.01 with an energy of Eg,c=2.13±O.OI eV and an indirect (L6 )-indirect (~c) C
crossover atxc=0.78±O.OI with Eg,c=2.24±0.OI eV.

The IR reflectivity spectra of Ga)nl_J' have been measured in the spectral ranges of
260-500 [3] and 220-500 cm-I [4]. Figure C2-V-I shows the results obtained by Jahne
et al. (x=0-1.0) [4]. Optical absorption measurements of Ga)nl_~ alloy have also been
performed by several authors [5,6], The purpose of these measurements is to determine
the fundamental absorption edge [5] and to study the effect of hydrostatic pressure on
7.0
1 OB
InP
to.6
'§
'§ 124
'0.1
D~~~~~~~~~~~~~~~~~~~~~~~~~~~
1.D,-------,.-----~ ,-------;---;--------, r--------~

1 :1 11
0.60
DB GaP
126
0.4
121
0. L.u..u.-L.wJ-1.00.L.U...L..U...w...L6:WDDw...ww...w~50.u'O '-'-'-~~~J~OD~-'-W......JL-..."-'-'-~j.lJoo '-'-'-~~JO.LOw...w-'-'-'-~4..J.OOl6-..~~!iI).J.jv
wave nurnb~r (em-') -~
Figure C2-V-l IR reflectivity spectra for Ga.InI_xP with O~l.O measured at room tempera-
ture. (From Jahne et al. [4].)
297
the fundamental absorption edge [6]. Theoretically. Ting and Chang [7] studied disor-
der effect on the optical absorption of some III-V alloys. including GaxIn,_"p. with the
use of CPA and VCA They found that the CPA and VCA produce similar absorption
spectra for photon energy above the direct band edge. However. for indirect materials.
because of the scattering due to the disorder potential. clear difference was recognized
in these absorption spectra. Figure C2-V-2 reproduces the results for Ga)n,_"p alloy
[7].
GOXlnl-xP
x=O.IO x=0.30 x=0.90
~105
~
·c::l
-€104
2
I- =0.15eV
z 8fo
!:!:!103 8fb =0.53eV
u
u:
lI..
w
810 2 --CPA
Z
Q ---- VCA
I-
&:10
o(/)
CD
4 IL-~~_~li-_L-~~_~~~~~W--~~~
1.4 1.8 2.2 2.6
PHOTON ENERGY -nw (eV)
Figure C2·V·2 Comparison of the absorption coefficient obtained by CPA and VCA at various
alloy compositions for GaJn,_xP alloy. (From Ting and Chang [7].)
Lee et al. [8] studied optical properties of GaxIn,_"p (O.26~O.8) epitaxial layers
grown on GaAs and graded GaInP/GaP substrates using SE and RS. They determined
the E, and E,+.:l, CPs and first-order phonon frequencies as a function of x and found
that the general behavior of the peak energy (frequency) shift and broadening of both
the E, and optical phonons can be explained in terms of the biaxial strain and strain
relaxation caused by lattice-mismatch.
REFERENCES
1. A-B. Chen and A Sher. Semiconductor Alloys: Physics and Materials Engi-
neering (plenum. New York. 1995).
2. Yu. K. Krutogolov. S. V. Dovzhenko. S. A Diordiev. L. I. Krutogolova. Yu. I.
Kunakin. and S. S. Ryzhikh. Sov. Phys. Semicond. 23.557 (1989).
3. G. Lucovsky, M. H. Brodsky, M. F. Chen, R.I. Chicotka, and A. T. Ward, Phys.

Rev. B 4,1945 (1971).
4. E. lahne, W. Pilz, M. Giehler, and L. Hildisch, Phys. Status Solidi B 91, 155
(1979).
5. G. B. Stringfellow, P. F. Lindquist, and R. A. Burmeister, 1. Electron. Mater. 1,
437 (1972).
6. A. R. Gofii, K. Syassen, K. Strossner, and M. Cardona, Phys. Rev. B 39, 3178
(1989).
7. D. Z.-Y. Ting and Y.-C. Chang, Phys. Rev. B 30, 3309 (1984).
8. H. Lee, D. Biswas, M.V. Klein, H. Morko«, D. E. Aspnes, B. D. Choe, 1. Kim,
and C. O. Griffiths, 1. Appl. Phys. 75,5040 (1994).
The alloy system AlxGal_xAs/GaAs is potentially of great importance for many high-
speed electronic and optoelectronic devices, because the lattice parameter difference
between GaAs and AI..Gal_xAs is very small, less than 0.15% at room temperature,
which promises an insignificant concentration of undesirable interface states [1]. A
review of many important physical and semiconducting properties of this alloy system
has been given in Refs. [1-3].
The static (e,) and high-frequency dielectric constants (e..) for AlxGal_xAs alloy at
300 K can be given by [1-3]
e.(x) =13.18- 3.12x (C2.1)
e~ (x) = 10.89 - 2.73x (C2.2)
Kim and Spitzer [4] measured IR reflectivity spectra for LPE-grown AlxGal_xAs
(x=0-0.54) in the frequency range 24(}-7oo cm-I • The samples were undoped and had
free-electron concentrations in low 5x1016 cm-3 • The reflectivity data were analyzed by
using the KK dispersion relations and by curve fitting with the classical dispersion
formulae. We have already shown in Figs. 2.13 and 2.14 the e(E) and n*(E) spectra for
AI..Gal_xAs as calculated using the reststrahlen parameters of Kim and Spitzer [4] and
Perkowitz et al. (AlAs, Ref. [5]). These spectra evidence two main optical resonances,
i.e., GaAs- and AlAs-like resonances (two-mode behavior).
We show in Fig. C2-VI-l shows the optical absorption spectra for AI..Gal_xAs (x=(}-
1.0) as measured by Pearah et al. [6]. Note that in the figure the free-exciton effects are
subtracted out and would only serve to obscure the curves on this energy scale. The
shape of these curves are found to correlate closely with theoretical calculations taking
into account the effect of alloy disorder by employing the CPA rather than the VCA for
the crystal potential [7].
The optical constants of semiconductor alloy vary both with photon energy and alloy
composition. Accurate experimental n values for the wide composition range of AlxGal_
xAs at energies below the fundamental band gap have not been available. This necessi-
tates the use of some sort of an interpolation scheme. Therefore, Adachi [8] presented a
method for the calculation of n in III-V compounds at energies below the direct band
edge. The theoretical expression obtained by him is given by Eq. (C1.l4). This theore-
tical prediction showed quite good agreement with the experimental data of some III-V
binaries and quaternary (Ga)nl_)'yAs I _y). The composition dependence of the fitting
parameters Ao· and B* in Eq. (C1.14) for AlxGal_xAs ternary was found to be expressed
as continuous functions of x [1]. This assures that one can calculate the spectral depen-
dence of n for optional composition x of AlxGal_xAs alloy and photon energy E with a
good accuracy, as shown in Fig. C2-VI-2 withx-composition increments of 0.1 [1].
Aspnes et al. [9] have reported the room-temperature optical constants for AlxGa l_
xAs alloy of target compositions x=O-O.80 in steps of 0.10 at energies between 1.5 and
6.0 eV measured by SE. The samples were grown by LPE, and the actual compositions
derived were not different from the target compositions by more than 0.02. Doping
300
)
g 2
Figure C2·VI·l Optical

absOlption spectra for
AlxGal_xAs alloy meas-
ured at 3 K. (From
Pearah et al. [6].)
Photon Energy hv (eV)
4 . 5 , - - - - - - - - - - - -__
1.0
4.0
c 3.5
Figure C2· VI·2 Calculated

refractive-index dispersion for
3.0 AlxGal_xAs with x-composition
increments of 0.1 at 300 K.
(From Adachi [1].)
2.5 ~--'-....L...-"'_:_'::_'_-'--..L.--I_:l_--'-....L...-J......j......J..I
o 1.0 2.0 3.0
PHOTON ENERGY (eV)
conditions and electrical properties of these samples were not described. The accuracy
of the pseudodielectric function at selected wavelengths in the technologically relevant
composition range of x=O-O.5 was less than 2% of its peak value. Their measured n(E)
and k(E) are shown in Figs. C2-VI-3 (a) and (b), respectively.
5 4
4 3
c 3 x=O .:.:. 2 x=O

x=O.099 x=O.099
x=O.198 x=O.198
x=O.315 x=O.315
x=0.419 x=0.419
x=0.491 x=0.491
2 x=O.590 x=O.590
x=O.700 x=O.700
x=O.804 x=O.804
2 345 6 2 3 4 5 6
PHOTON ENERGY (eV) PHOTON ENERGY (eV)
Figure C2-VI-3 n(E) and k(E) spectra for Al.Gal .•As with the nine compositions, from left to
right with increasing x. These are calculated from the SE £(E) data of Aspnes et at. [9].
The data of Aspnes et al. [9] are very worthy for understanding fundamental optical
properties of AlxGal ...As. However, these data seem to have one disadvantage with re-
spect to their usefulness: they are not expressed as continuous analytic functions of
photon energy E and alloy composition x. Various theoretical models have, therefore,
been proposed recently which enable calculation of the optical constants in the inter-
band transition region of semiconductors [10-15].
Tables C2-VI-la-C2- VI-1flist the room-temperature values of E=~\+i~, n*=n+ik, n,
and R for AlxGal_xAs (0.14~:::;0.54). These data were obtained from the reststrahlen
parameters of Kim and Spitzer [4]. Tables C2-VI -2a-C2- VI -2i list the optical constants
in the transparent and interband transition regions of AlXGa1...As (O.099~.900) at
room temperature. They were taken from Adachi [1] for 0.5:::;E:::;1.4 eV and from Asp-
nes et al. [9] for 1.5:::;E:::;6.0 e V.
REFERENCES
1. S. Adachi, I. Appl. Phys. 58, Rl (1985).
2. Properties of Aluminium Gallium Arsenide, EMIS Datareviews Series No.7, edit-
ed by S. Adachi (INSPEC (lEE), London, 1993).
4. O. K. Kim and W. G. Spitzer, 1. Appl. Phys. 50,4362 (1979).

5. S. Perkowitz, R. Sudharsanan, S. S. Yom, and T. J. Drummond, Solid State Com-
mun. 62, 645 (1987).
6. P. J. Pearah, W. T. Masselink, 1. Klem, T. Henderson, H. Morko<;:, C.W. Litton,
and D. C. Reynolds, Phys. Rev. B 32, 3857 (1985).
7. D. Z.- Y. Ting and Y.-C. Chang, Phys. Rev. B 30, 3309 (1984).
9. D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, 1. Appl. Phys. 60, 754
(1986).
11. D. W. Jenkins, 1. Appl. Phys. 68, 1848 (1990).
12. F. L. Terry, Jr., 1. Appl. Phys. 70, 409 (1991).
13. C. C. Kim, J. W. Garland, and P. M. Raccah, Phys. Rev. B 47,1876 (1993).
14. C.-H. Lin and 1. M. Meese, 1. Appl. Phys. 74, 6341(1993); erratum, ibid. 77, 444
(1995).
15. A. D. Rakic and M. L. Majewski, 1. Appl. Phys. 80, 5909 (1996).
Table C2-VI-la Optical constants in the reststrahlen region oj AI.GaJ .• As with x=O.14
at300K.
eV cm· 1 101 ~ n k a (em-I) R
0.0248 200 15.20 0.203 3.899 0.026 6.44E+Ol 0.350
0.0254 205 15.49 0.228 3.936 0.029 7.53E+Ol 0.354
0.026 210 15.82 0.271 3.978 0.034 8.89E+Ol 0.358
0.0266 215 16.22 0.314 4.028 0.039 1.06E+02 0.363
0.0273 220 16.70 0.384 4.087 0.047 1.29E+02 0.368
0.0279 225 17.29 0.466 4.159 0.056 1.59E+02 0.375
0.0285 230 18.03 0.586 4.247 0.069 2.00E+02 0.383
0.0291 235 19.00 0.767 4.360 0.088 2.59E+02 0.393
0.0297 240 20.30 1.046 4.507 0.116 3.49E+02 0.406
0.0304 245 22.17 1.517 4.711 0.161 4.96E+02 0.423
0.031 250 25.03 2.434 5.009 0.243 7.65E+02 0.446
0.0312 252 26.66 3.062 5.172 0.296 9.39E+02 0.458
0.0315 254 28.71 3.975 5.371 0.370 1.18E+03 0.473
0.0317 256 31.39 5.376 5.623 0.478 1.54E+03 0.490
0.032 258 34.95 7.672 5.947 0.645 2.09E+03 0.511
0.0322 260 39.79 11.77 6.375 0.923 3.02E+03 0.538
0.0325 262 46.16 19.94 6.944 1.436 4.73E+03 0.574
0.0327 264 51.71 37.96 7.611 2.494 8.27E+03 0.621
0.033 266 37.70 71.27 7.692 4.633 1.55E+04 0.683
0.0332 268 -13.10 72.94 5.523 6.603 2.22E+04 0.744
0.0335 270 -29.18 38.57 3.097 6.227 2. 11E+04 0.777
0.0337 272 -23.33 19.51 1.882 5.184 1.77E+04 0.786
0.034 274 -16.50 11.08 1.299 4.265 1.47E+04 0.779
0.0342 276 -11.35 6.968 0.992 3.512 1.22E+04 0.757
0.0345 278 -7.590 4.727 0.822 2.875 1.00E+04 0.716
0.0347 280 -4.788 3.388 0.734 2.308 8. 12E+03 0.648
Table C2-VI-la Continued (AlxGal.xAs, x=O.14).

eV em' 1
1:1 1:2 n k ex (em· 1) R
0.035 282 -2.636 2.537 0.715 1.774 6.29E+03 0.530
0.0352 284 -0.937 1.960 0.786 1.247 4.45E+03 0.337
0.0354 286 0.435 1.558 1.013 0.769 2.76E+03 0.127
0.0357 288 1.567 1.266 1.338 0.473 1.71E+03 0.059
0.0359 290 2.520 1.047 1.620 0.323 1.18E+03 0.070
0.0362 292 3.332 0.880 1.841 0.239 8.79E+02 0.094
0.0364 294 4.033 0.754 2.017 0.187 6.90E+02 0.117
0.0367 296 4.651 0.653 2.162 0.151 5.6IE+02 0.137
0.0369 298 5.196 0.571 2.283 0.125 4.70E+02 0.154
0.0372 300 5.691 0.511 2.388 0.107 4.02E+02 0.169
0.0374 302 6.132 0.461 2.478 0.093 3.5IE+02 0.181
0.0377 304 6.537 0.420 2.558 0.082 3. 12E+02 0.192
0.0379 306 6.912 0.384 2.630 0.073 2.83E+02 0.202
0.0382 308 7.264 0.361 2.696 0.067 2.60E+02 0.211
0.0384 310 7.592 0.342 2.756 0.062 2.43E+02 0.219
0.0387 312 7.904 0.332 2.812 0.059 2.31E+02 0.226
0.0389 314 8.199 0.326 2.864 0.057 2.24E+02 0.233
0.0392 316 8.488 0.321 2.914 0.055 2.20E+02 0.239
0.0394 318 8.770 0.326 2.962 0.055 2.20E+02 0.245
0.0397 320 9.045 0.337 3.008 0.056 2.24E+02 0.251
0.0399 322 9.324 0.348 3.054 0.057 2.32E+02 0.257
0.0402 324 9.600 0.372 3.099 0.060 2.44E+02 0.262
0.0404 326 9.881 0.402 3.144 0.064 2.61E+02 0.268
0.0407 328 10.18 0.440 3.191 0.069 2.84E+02 0.273
0.0409 330 10.48 0.492 3.238 0.076 3. 13E+02 0.279
0.0412 332 10.80 0.552 3.288 0.084 3.52E+02 0.285
0.0414 334 11.15 0.635 3.341 0.095 4.0IE+02 0.291
0.0416 336 11.53 0.747 3.397 0.110 4.64E+02 0.298
0.0419 338 11.95 0.892 3.459 0.129 5.46E+02 0.305
0.0421 340 12.42 1.079 3.527 0.153 6.55E+02 0.312
0.0424 342 12.95 1.341 3.604 0.186 8.00E+02 0.321
0.0426 344 13.57 1.705 3.691 0.231 9.99E+02 0.331
0.0429 346 14.29 2.229 3.791 0.294 1.28E+03 0.342
0.0431 348 15.11 3.000 3.906 0.384 1.68E+03 0.355
0.0434 350 16.03 4.190 4.037 0.519 2.28E+03 0.370
0.0436 352 16.92 6.057 4.177 0.725 3.2IE+03 0.389
0.0439 354 17.34 8.981 4.293 1.046 4.65E+03 0.410
0.0441 356 16.11 13.02 4.291 1.517 6.79E+03 0.433
0.0444 358 11.75 16.55 4.003 2.067 9.30E+03 0.454
0.0446 360 5.607 16.31 3.380 2.412 1.09E+04 0.459
0.0449 362 1.674 12.73 2.694 2.363 1.07E+04 0.440
0.Q451 364 0.615 8.991 2.194 2.049 9.37E+03 0.391
0.0454 366 0.937 6.313 1.913 1.650 7.59E+03 0.317
0.0456 368 1.665 4.556 1.805 1.262 5.83E+03 0.237
0.0459 370 2.433 3.405 1.819 0.936 4.35E+03 0.175
0.0461 372 3.131 2.630 1.900 0.692 3.23E+03 0.145
0.0464 374 3.737 2.086 2.002 0.521 2.45E+03 0.137
0.0466 376 4.255 1.698 2.102 0.404 1.9IE+03 0.141
0.0469 378 4.697 1.411 2.191 0.322 1.53E+03 0.148
0.0471 380 5.084 1.189 2.270 0.262 1.25E+03 0.156
Table C2·VI·la Continued (AI.Ga]_.As. x=O.14).
eV em·! £.! £.2 n k a (em·!) R
0.0473 382 50414 1.019 2.337 0.218 1.05E+03 0.164
0.0476 384 5.707 0.882 2.396 0.184 8.89E+02 0.171
0.0478 386 5.968 0.774 20448 0.158 7.66E+02 0.178
0.0481 388 6.196 0.683 20493 0.137 6.69E+02 0.184
0.0483 390 60402 0.608 2.533 0.120 5.90E+02 0.189
0.0486 392 6.588 0.550 2.569 0.107 5.25E+02 0.194
0.0488 394 6.756 00494 2.601 0.095 4.71E+02 0.198
0.0491 396 6.910 0.447 2.630 0.085 4.25E+02 0.202
0.0493 398 7.048 00409 2.656 0.077 3.86E+02 0.206
0.0496 400 7.178 0.375 2.680 0.070 3.53E+02 0.209
0.0502 405 70461 0.311 2.732 0.057 2.88E+02 0.216
0.0508 410 7.693 0.261 2.774 0.047 2AOE+02 0.221
0.0514 415 7.895 0.219 2.810 0.039 2.04E+02 0.226
0.0521 420 8.070 0.188 2.841 0.033 1.77E+02 0.230
0.0527 425 8.219 0.166 2.867 0.029 1.54E+02 0.233
0.0533 430 8.357 0.145 2.891 0.025 1.37E+02 0.236
0.0539 435 80473 0.128 2.911 0.022 1.22E+02 0.239
0.0545 440 8.585 0.117 2.930 0.020 1.10E+02 0.241
0.0552 445 8.679 0.106 2.946 0.018 9.95E+Ol 0.243
0.0558 450 8.767 0.095 2.961 0.016 9.07E+Ol 0.245
0.0564 455 8.850 0.089 2.975 0.015 8.32E+01 0.247
0.057 460 8.922 0.078 2.987 0.013 7.66E+Ol 0.248
0.0576 465 8.994 0.072 2.999 0.012 7.08E+01 0.250
0.0583 470 9.054 0.066 3.009 0.011 6.57E+01 0.251
0.0589 475 9.114 0.060 3.019 0.010 6. 12E+0 1 0.252
0.0595 480 9.169 0.055 3.028 0.009 5.72E+Ol 0.253
0.0601 485 9.217 0.055 3.036 0.009 5.36E+Ol 0.255
0.0607 490 9.266 0.049 3.044 0.008 5.03E+Ol 0.255
0.0614 495 9.315 0.049 3.052 0.008 4.74E+Ol 0.256
0.062 500 9.351 0.043 3.058 0.007 4A7E+Ol 0.257
Table C2·VI·lb Optical constants in the reststrahlen region of AI.Ga] .• As with x=O.18
at300K.
eV em-! 1O! £.2 n k a (em·!) R
0.0248 200 14.84 0.616 3.853 0.080 2.0 1E+02 0.346
0.0254 205 15.09 0.684 3.886 0.088 2.28E+02 0.349
0.026 210 15.39 0.777 3.924 0.099 2.61E+02 0.353
0.0266 215 15.75 0.881 3.970 0.111 3.01E+02 0.357
0.0273 220 16.17 1.022 4.023 0.127 3.51E+02 0.363
0.0279 225 16.69 1.202 4.088 0.147 4.15E+02 0.369
0.0285 230 17.33 1.442 4.167 0.173 5.00E+02 0.376
0.0291 235 18.16 1.784 4.267 0.209 6. 17E+02 0.386
0.0297 240 19.27 2.295 4.397 0.261 7.87E+02 0.398
0.0304 245 20.81 3.119 4.574 0.341 1.05E+03 00413
0.031 250 23.06 4.623 4.826 00479 1.51E+03 00435
0.0312 252 24.27 5.604 4.959 0.565 1.79E+03 00446
0.0315 254 25.72 6.959 5.117 0.680 2. 17E+03 00460
0.0317 256 27046 8.926 5.307 0.841 2.71E+03 00476
306 llI-V ALLOY SEMICONDUCTORS
Table C2-VI-lb Continued (AI.Ga}_.As, x=O.18).

eV em-' £, ~ n k ex. (em-') R
0.032 258 29.47 11.92 5.534 1.077 3.49E+03 0.495
0.0322 260 31.51 16.68 5.795 1.439 4.70E+03 0.519
0.0325 262 32.52 24.41 6.049 2.018 6.64E+03 0.550
0.0327 264 29.01 36.04 6.135 2.937 9.74E+03 0.588
0.033 266 14.68 46.55 5.634 4.131 1.38E+04 0.631
0.0332 268 -5.457 42.45 4.321 4.912 1.65E+04 0.670
0.0335 270 -14.41 27.96 2.919 4.789 1.62E+04 0.695
0.0337 272 -13.74 16.55 1.971 4.198 1.43E+04 0.702
0.034 274 -10.47 9.945 1.409 3.529 1.22E+04 0.691
0.0342 276 -7.228 6.252 1.079 2.897 1.00E+04 0.661
0.0345 278 -4.537 4.104 0.889 2.308 8.06E+03 0.600
0.0347 280 -2.374 2.786 0.802 1.737 6. 11E+03 0.488
0.035 282 -0.633 1.944 0.840 1.157 4.10E+03 0.289
0.0352 284 0.781 1.385 1.089 0.636 2.27E+03 0.087
0.0354 286 1.950 1.002 1.439 0.348 1.25E+03 0.052
0.0357 288 2.927 0.731 1.724 0.212 7.68E+02 0.076
0.0359 290 3.760 0.540 1.944 0.139 5.05E+02 0.105
0.0362 292 4.481 0.398 2.119 0.094 3.46E+02 0.129
0.0364 294 5.108 0.298 2.261 0.066 2.44E+02 0.150
0.0367 296 5.662 0.224 2.380 0.047 1.75E+02 0.167
0.0369 298 6.159 0.174 2.482 0.035 1.30E+02 0.181
0.0372 300 6.609 0.134 2.571 0.026 9.9OE+Ol 0.194
0.0374 302 7.017 0.111 2.649 0.021 7.93E+Ol 0.204
0.0377 304 7.393 0.098 2.719 0.018 6.80E+Ol 0.214
0.0379 306 7.739 0.089 2.782 0.016 6.30E+Ol 0.222
0.0382 308 8.071 0.091 2.841 0.016 6.33E+Ol 0.230
0.0384 310 8.381 0.098 2.895 0.017 6.80E+Ol 0.237
0.0387 312 8.679 0.118 2.946 0.020 7.68E+Ol 0.243
0.0389 314 8.964 0.138 2.994 0.023 8.93E+Ol 0.249
0.0392 316 9.241 0.164 3.040 0.027 1.05E+02 0.255
0.0394 318 9.516 0.191 3.085 0.031 1.25E+02 0.261
0.0397 320 9.789 0.232 3.129 0.037 1.50E+02 0.266
0.0399 322 10.06 0.279 3.172 0.044 1.78E+02 0.271
0.0402 324 10.34 0.334 3.216 0.052 2. 12E+02 0.276
0.0404 326 10.62 0.398 3.259 0.061 2.51E+02 0.282
0.0407 328 10.91 0.476 3.304 0.072 2.98E+02 0.287
0.0409 330 11.22 0.570 3.351 0.085 3.53E+02 0.292
0.0412 332 11.55 0.680 3.400 0.100 4. 19E+02 0.298
0.0414 334 11.90 0.821 3.451 0.119 4.98E+02 0.304
0.0416 336 12.27 0.989 3.506 0.141 5.94E+02 0.310
0.0419 338 12.69 1.198 3.566 0.168 7. 12E+02 0.317
0.0421 340 13.15 1.460 3.632 0.201 8.60E+02 0.324
0.0424 342 13.66 1.808 3.704 0.244 1.05E+03 0.332
0.0426 344 14.24 2.263 3.785 0.299 1.29E+03 0.341
0.0429 346 14.88 2.884 3.876 0.372 1.62E+03 0.352
0.0431 348 15.60 3.739 3.978 0.470 2.05E+03 0.364
0.0434 350 16.35 4.956 4.089 0.606 2.67E+03 0.377
0.0436 352 17.02 6.733 4.203 0.801 3.54E+03 0.393
0.0439 354 17.32 9.286 4.299 1.080 4.80E+03 0.412
0.0441 356 16.50 12.72 4.321 1.472 6.58E+03 0.433
Table C2·VI·lb Continued (AlxGal.xAs. x=O.lS).

eV em'! £! £2 n k a (em'!) R
0.0444 358 13.51 16.33 4.165 1.960 8.82E+03 0.454
0.0446 360 8.13 17.95 3.731 2.406 1.09E+04 0.470
0.0449 362 2.81 16.04 3.090 2.596 1.18E+04 0.473
0.0451 364 -0.020 12.23 2.471 2.475 1.13E+04 0.456
0.0454 366 -0.626 8.700 2.012 2.162 9.94E+03 0.415
0.0456 368 -0.172 6.127 1.726 1.775 8.21E+03 0.348
0.0459 370 0.621 4.386 1.589 1.380 6.42E+03 0.262
0.0461 372 1.447 3.209 1.576 1.018 4.76E+03 0.178
0.0464 374 2.207 2.397 1.653 0.725 3.41E+03 0.126
0.0466 376 2.875 1.825 1.772 0.515 2.43E+03 0.108
0.0469 378 3.453 1.410 1.895 0.372 1.77E+03 0.110
0.0471 380 3.952 1.104 2.007 0.275 l.31E+03 0.120
0.0473 382 4.388 0.871 2.105 0.207 9.93E+02 0.131
0.0476 384 4.767 0.692 2.189 0.158 7.61E+02 0.141
0.0478 386 5.102 0.547 2.262 0.121 5.89E+02 0.151
0.0481 388 5.397 0.437 2.325 0.094 4.58E+02 0.160
0.0483 390 5.659 0.347 2.380 0.073 3.56E+02 0.167
0.0486 392 5.897 0.272 2.429 0.056 2.75E+02 0.174
0.0488 394 6.109 0.213 2.472 0.043 2. 11E+02 0.180
0.0491 396 6.304 0.161 2.511 0.032 1.58E+02 0.185
0.0493 398 6.476 0.117 2.545 0.023 l.15E+02 0.190
0.0496 400 6.636 0.082 2.576 0.016 7.84E+01 0.194
0.0502 405 6.985 0.011 2.643 0.002 l.l1E+02 0.203
0.0508 410 7.274 0.038 2.697 0.007 0.211
0.0514 415 7.513 0.071 2.741 0.013 0.217
0.0521 420 7.723 0.094 2.779 0.017 0.222
0.0527 425 7.901 0.112 2.811 0.020 0.226
0.0533 430 8.059 0.125 2.839 0.022 0.229
0.0539 435 8.196 0.132 2.863 0.023 0.233
0.0545 440 8.323 0.138 2.885 0.024 0.235
0.0552 445 8.433 0.145 2.904 0.Q25 0.238
0.0558 450 8.532 0.152 2.921 0.026 0.240
0.0564 455 8.625 0.153 2.937 0.026 0.242
0.057 460 8.708 0.153 2.951 0.026 0.244
0.0576 465 8.785 0.154 2.964 0.026 0.246
0.0583 470 8.856 0.155 2.976 0.026 0.247
0.0589 475 8.921 0.155 2.987 0.026 0.248
0.0595 480 8.981 0.156 2.997 0.026 0.250
0.0601 485 9.041 0.156 3.007 0.026 0.251
0.0607 490 9.096 0.157 3.016 0.026 0.252
0.0614 495 9.144 0.157 3.024 0.026 0.253
0.062 500 9.186 0.152 3.031 0.025 0.254
Table C2·VI·lc Optical constants in the reststrahlen region of Alpal.As with x=030
at 300 K.
eV em'! £! £2 n k a (em'!) R
0.0248 200 14.47 0.479 3.805 0.063 1.57E+02 0.341
0.0254 205 14.71 0.529 3.836 0.069 1.79E+02 0.344
Table C2·VI·lc Continued (AlxGal_xAs, x=030)_

eV cm-! £! £2 n k a (cm-!) R
0.026 210 14.99 0.604 3.872 0.078 2.05E+02 0.348
0.0266 215 15.31 0.689 3.914 0.088 2.38E+02 0.352
0.0273 220 15.70 0.801 3.964 0.101 2.79E+02 0.357
0.0279 225 16.19 0.950 4.025 0.118 3.33E+02 0.363
0.0285 230 16.78 1.148 4.099 0.140 4.05E+02 0.370
0.0291 235 17.56 1.443 4.194 0.172 5.07E+02 0.379
0.0297 240 18.61 1.892 4.320 0.219 6.60E+02 0.390
0.0304 245 20.09 2.650 4.492 0.295 9.09E+02 0.406
0.031 250 22.32 4.118 4.744 0.434 1.36E+02 0.428
0.0312 252 23.53 5.123 4.879 0.525 1.66E+02 0.440
0.0315 254 25.00 6.585 5.042 0.653 2.08E+02 0.454
0.0317 256 26.72 8.798 5.237 0.840 2.70E+02 0.471
0.032 258 28.61 12.34 5.467 1.129 3.66E+03 0.493
0.0322 260 30.00 18.22 5.705 1.597 5.22E+03 0.520
0.0325 262 28.45 27.49 5.831 2.357 7.76E+03 0.553
0.0327 264 18.53 37.56 5.496 3.417 1.13E+04 0.592
0.033 266 1.359 37.00 4.381 4.223 1.4IE+04 0.625
0.0332 268 -8.148 25.55 3.055 4.181 1.41E+04 0.640
0.0335 270 -8.543 15.45 2.134 3.619 1.23E+04 0.628
0.0337 272 -6.088 9.456 1.606 2.944 1.0IE+04 0.584
0.034 274 -3.437 6.094 1.334 2.284 7.87E+03 0.500
0.0342 276 -1.191 4.133 1.247 1.657 5.75E+03 0.360
0.0345 278 0.628 2.934 1.347 1.089 3.81E+03 0.195
0.0347 280 2.095 2.164 1.598 0.677 2.38E+03 0.113
0.035 282 3.295 1.648 1.868 0.441 l.56E+03 0.113
0.0352 284 4.289 1.294 2.094 0.309 1.10E+03 0.134
0.0354 286 5.132 1.043 2.277 0.229 8.25E+02 0.156
0.0357 288 5.849 0.863 2.425 0.178 6.46E+02 0.175
0.0359 290 6.472 0.734 2.548 0.144 5.25E+02 0.192
0.0362 292 7.024 0.642 2.653 0.121 4.42E+02 0.206
0.0364 294 7.513 0.571 2.743 0.104 3.84E+02 0.218
0.0367 296 7.955 0.519 2.822 0.092 3.44E+02 0.228
0.0369 298 7.663 4.885 2.894 0.844 3. 16E+02 0.237
0.0372 300 8.744 0.467 2.958 0.079 2.98E+02 0.245
0.0374 302 9.097 0.459 3.017 0.076 2.88E+02 0.252
0.0377 304 9.426 0.455 3.071 0.074 2.84E+02 0.259
0.0379 306 9.741 0.462 3.122 0.074 2.85E+02 0.265
0.0382 308 10.05 0.476 3.171 0.075 2.9IE+02 0.271
0.0384 310 10.35 0.496 3.218 0.077 3.01E+02 0.277
0.0387 312 10.64 0.529 3.263 0.081 3. 16E+02 0.282
0.0389 314 10.94 0.562 3.308 0.085 3.35E+02 0.287
0.0392 316 11.23 0.603 3.352 0.090 3.58E+02 0.292
0.0394 318 11.52 0.659 3.396 0.097 3.86E+02 0.297
0.0397 320 11.83 0.716 3.441 0.104 4. 19E+02 0.302
0.0399 322 12.14 0.788 3.486 0.113 4.58E+02 0.308
0.0402 324 12.47 0.876 3.534 0.124 5.04E+02 0.313
0.0404 326 12.82 0.975 3.583 0.136 5.57E+02 0.318
0.0407 328 13.18 1.097 3.634 0.151 6.2IE+02 0.324
0.0409 330 13.58 1.240 3.689 0.168 6.96E+02 0.330
0.0412 332 14.01 1.409 3.748 0.188 7.85E+02 0.336
Table C2-VI-lc Continued (AlxGa}_xAs, x=030)_

eV em-! £! £2 n k a (em-!) R
0.0414 334 14.48 1.616 3.811 0.212 8.92E+02 0.343
0.0416 336 15.00 1.878 3.880 0.242 1.02E+03 0.350
0.0419 338 15.58 2.200 3.957 0.278 1.18E+03 0.358
0.0421 340 16.23 2.611 4.042 0.323 1.38E+03 0.367
0.0424 342 16.97 3.144 4.137 0.380 1.63E+03 0.376
0.0426 344 17.81 3.846 4.245 0.453 1.96E+03 0.387
0.0429 346 18.77 4.795 4.367 0.549 2.39E+03 0.400
0.0431 348 19.83 6.118 4.505 0.679 2.97E+03 0.414
0.0434 350 20.96 8.002 4.658 0.859 3.78E+03 0.431
0.0436 352 21.99 10.74 4.820 1.114 4.93E+03 0.451
0.0439 354 22.45 14.69 4.964 1.480 6.58E+03 0.474
0.0441 356 21.27 20.06 5.025 1.996 8.93E+03 0.501
0.0444 358 16.67 25.83 4.869 2.652 1.19E+04 0.530
0.0446 360 8.190 28.61 4.356 3.284 1.49E+04 0.559
0.0449 362 -0.402 25.75 3.560 3.616 1.64E+04 0.580
0.0451 364 -5.065 19.67 2.761 3.562 1.63E+04 0.588
0.0454 366 -6.098 14.00 2.142 3.269 1.50E+04 0.583
0.0456 368 -5.404 9.885 1.712 2.887 1.33E+04 0.563
0.0459 370 -4.154 7.101 1.427 2.488 1.16E+04 0.528
0.0461 372 -2.853 5.231 1.246 2.099 9.8IE+03 0.473
0.0464 374 -1.663 3.945 1.144 1.724 8.10E+03 0.395
0.0466 376 -0.622 3.041 1.114 1.365 6.45E+03 0.296
0.0469 378 0.276 2.390 1.158 1.032 4.90E+03 0.191
0.0471 380 1.047 1.910 1.270 0.752 3.59E+03 0.112
0.0473 382 1.715 1.543 1.418 0.544 2.61E+03 0.077
0.0476 384 2.293 1.263 1.567 0.403 1.94E+03 0.072
0.0478 386 2.803 1.042 1.702 0.306 1.48E+03 0.079
0.0481 388 3.248 0.865 1.818 0.238 1.16E+03 0.091
0.0483 390 3.643 0.725 1.918 0.189 9.24E+02 0.103
0.0486 392 3.997 0.606 2.005 0.151 7.45E+02 0.114
0.0488 394 4.311 0.512 2.080 0.123 6.08E+02 0.124
0.0491 396 4.595 0.429 2.146 0.100 4.99E+02 0.134
0.0493 398 4.855 0.362 2.205 0.082 4. 12E+02 0.142
0.0496 400 5.089 0.307 2.257 0.068 3.4IE+02 0.149
0.0502 405 5.596 0.199 2.366 0.042 2.12E+02 0.165
0.0508 410 6.012 0.123 2.452 0.025 1.27E+02 0.177
0.0514 415 6.355 0.066 2.521 0.013 6.8IE+01 0.187
0.0521 420 6.646 0.026 2.578 0.005 2.63E+01 0.195
0.0527 425 6.896 0.005 2.626 0.001 0.201
0.0533 430 7.118 0.027 2.668 0.005 0.207
0.0539 435 7.306 0.043 2.703 0.008 0.212
0.0545 440 7.475 0.060 2.734 0.011 0.216
0.0552 445 7.628 0.072 2.762 0.013 0.219
0.0558 450 7.762 0.Q78 2.786 0.014 0.223
0.0564 455 7.885 0.084 2.808 0.015 0.225
0.057 460 7.997 0.090 2.828 0.016 0.228
0.0576 465 8.099 0.091 2.846 0.016 0.230
0.0583 470 8.191 0.097 2.862 0.017 0.232
0.0589 475 8.277 0.098 2.877 0.017 0.234
0.0595 480 8.358 0.104 2.891 0.018 0.236
Table C2-VI-lc Continued (AlzGal_zAs, x=O.30).

eV em-I £1 £2 n k ex (em· l) R
0.0601 485 8.427 0.105 2.903 0.018 0.238
0.0607 490 8.497 0.105 2.915 0.018 0.239
0.0614 495 8.561 0.105 2.926 0.018 0.241
0.062 500 8.620 0.106 2.936 0.018 0.242
Table C2-VI-ld Optical constants in the reststrahlen region of AlxGal_xAs with x=O.36
at300K.
eV em- 1 £1 £2 n k ex (em· l) R
0.0248 200 14.27 0.748 3.779 0.099 2.49E+02 0.338
0.0254 205 14.49 0.838 3.808 0.110 2.83E+02 0.341
0.026 210 14.75 0.937 3.842 0.122 3.22E+02 0.345
0.0266 215 15.05 1.064 3.882 0.137 3.71E+02 0.349
0.0273 220 15.41 1.226 3.929 0.156 4.33E+02 0.354
0.0279 225 15.86 1.443 3.986 0.181 5.12E+02 0.360
0.0285 230 16.41 1.728 4.056 0.213 6. 17E+02 0.366
0.0291 235 17.11 2.138 4.144 0.258 7.63E+02 0.375
0.0297 240 18.03 2.768 4.259 0.325 9.80E+02 0.386
0.0304 245 19.30 3.796 4.414 0.430 1.33E+03 0.401
0.031 250 21.07 5.725 4.632 0.618 1.94E+03 0.423
0.0312 252 21.95 7.001 4.743 0.738 2.34E+03 0.434
0.0315 254 22.89 8.793 4.869 0.903 2.88E+03 0.448
0.0317 256 23.76 11.37 5.005 1.136 3.66E+03 0.464
0.032 258 24.15 15.17 5.132 1.478 4.79E+03 0.484
0.0322 260 23.00 20.51 5.187 1.977 6.46E+03 0.508
0.0325 262 18.21 26.64 5.024 2.651 8.73E+03 0.536
0.0327 264 8.58 29.55 4.436 3.331 1.10E+04 0.563
0.033 266 -1.12 25.21 3.473 3.630 1.2IE+04 0.581
0.3332 268 -5.19 17.32 2.539 3.411 l.15E+04 0.580
0.0335 270 -4.89 10.90 1.879 2.901 9.84E+03 0.550
0.0337 272 -3.07 6.819 1.485 2.296 7.85E+03 0.481
0.034 274 -1.08 4.357 1.306 1.668 5.74E+03 0.355
0.0342 276 0.69 2.856 1.346 1.061 3.68E+03 0.188
0.0345 278 2.16 1.918 1.590 0.603 2. 11E+03 0.101
0.0347 280 3.39 1.309 1.875 0.349 1.23E+03 0.106
0.035 282 4.42 0.904 2.113 0.214 7.58E+02 0.132
0.0352 284 5.29 0.631 2.303 0.137 4.89E+02 0.157
0.0354 286 6.03 0.447 2.457 0.091 3.26E+02 0.178
0.0357 288 6.67 0.315 2.584 0.061 2.22E+02 0.196
0.0359 290 7.24 0.231 2.691 0.043 1.56E+02 0.210
0.0362 292 7.74 0.172 2.782 0.031 1.14E+02 0.222
0.0364 294 8.20 0.137 2.863 0.024 8.81E+Ol 0.233
0.0367 296 8.61 0.117 2.934 0.020 7.42E+Ol 0.242
0.0369 298 8.99 0.108 2.998 0.018 6.90E+01 0.250
0.0372 300 9.34 0.116 3.057 0.019 7.06E+Ol 0.257
0.0374 302 9.68 0.124 3.112 0.020 7.74E+Ol 0.264
0.0377 304 10.00 0.145 3.163 0.023 8.88E+Ol 0.270
0.0379 306 10.31 0.173 3.211 0.027 1.04E+02 0.276
0.0382 308 10.61 0.209 3.258 0.032 1.23E+02 0.281
C2TERNARY ALLOYS 311
Table C2-VI-ld Continued (AI.Gal_.As, x=O.36).
eV em-) E) 102 n k a. (em-)) R
0.0384 310 10.91 0.244 3.303 0.037 1.46E+02 0.286
0.0387 312 11.20 0.295 3.347 0.044 1.72E+02 0.292
0.0389 314 11.49 0.346 3.390 0.051 2.02E+02 0.297
0.0392 316 11.79 0.405 3.434 0.059 2.36E+02 0.301
0.0394 318 12.09 0.480 3.478 0.069 2.75E+02 0.306
0.0397 320 12.41 0.557 3.523 0.079 3.19E+02 0.311
0.0399 322 12.73 0.650 3.569 0.091 3.69E+02 0.316
0.0402 324 13.07 0.752 3.617 0.104 4.25E+02 0.322
0.0404 326 13.43 0.880 3.667 0.120 4.9IE+02 0.327
0.0407 328 13.82 1.019 3.720 0.137 5.66E+02 0.333
0.0409 330 14.23 1.193 3.776 0.158 6.53E+02 0.339
0.0412 332 14.69 1.389 3.837 0.181 7.56E+02 0.345
0.0414 334 15.19 1.631 3.903 0.209 8.78E+02 0.352
0.0416 336 15.74 1.932 3.975 0.243 1.02E+03 0.359
0.0419 338 16.36 2.295 4.055 0.283 1.20E+03 0.367
0.0421 340 17.05 2.759 4.143 0.333 1.42E+03 0.376
0.0424 342 17.85 3.352 4.243 0.395 1.70E+03 0.386
0.0426 344 18.74 4.129 4.355 0.474 2.05E+03 0.397
0.0429 346 19.76 5.173 4.483 0.577 2.5IE+03 0.410
0.0431 348 20.90 6.617 4.627 0.715 3. 13E+03 0.425
0.0434 350 22.10 8.655 4.787 0.904 3.98E+03 0.442
0.0436 352 23.18 11.59 4.955 1.170 5.18E+03 0.462
0.0439 354 23.70 15.83 5.109 1.549 6.89E+03 0.485
0.0441 356 22.52 21.57 5.182 2.081 9.3IE+03 0.513
0.0444 358 17.80 27.86 5.043 2.762 1.24E+04 0.543
0.0446 360 8.80 31.30 4.545 3.443 1.56E+04 0.573
0.0449 362 -0.80 28.66 3.733 3.839 1.75E+04 0.598
0.0451 364 -6.36 22.14 2.887 3.834 1.75E+04 0.613
0.0454 366 -7.80 15.77 2.213 3.563 1.64E+04 0.615
0.0456 368 -7.14 11.06 1.736 3.186 1.47E+04 0.606
0.0459 370 -5.79 7.871 1.411 2.789 1.30E+04 0.585
0.0461 372 -4.34 5.717 1.191 2.400 1.12E+04 0.549
0.0464 374 -3.01 4.253 1.049 2.027 9.52E+03 0.495
0.0466 376 -1.84 3.220 0.967 1.665 7.87E+03 0.418
0.0469 378 -0.83 2.482 0.946 1.312 6.23E+03 0.313
0.0471 380 0.04 1.938 0.995 0.974 4.65E+03 0.192
0.0473 382 0.79 1.529 1.121 0.682 3.27E+03 0.097
0.0476 384 1.44 1.213 1.290 0.470 2.27E+03 0.056
0.0478 386 2.01 0.967 1.456 0.332 1.61E+03 0.052
0.0481 388 2.51 0.772 1.602 0.241 1.17E+03 0.062
0.0483 390 2.95 0.615 1.727 0.178 8.73E+02 0.075
0.0486 392 3.35 0.488 1.834 0.133 6.56E+02 0.089
0.0488 394 3.70 0.385 1.925 0.100 4.93E+02 0.101
0.0491 396 4.01 0.297 2.005 0.074 3.69E+02 0.112
0.0493 398 4.30 0.224 2.075 0.054 2.71E+02 0.122
0.0496 400 4.56 0.162 2.136 0.038 1.93E+02 0.131
0.0502 405 5.12 0.050 2.263 0.011 5.50E+Ol 0.150
0.0508 410 5.58 0.028 2.362 0.006 0.164
0.0514 415 5.96 0.083 2.441 0.017 0.175
0.0521 420 6.28 0.125 2.506 0.025 0.185
Table C2-VI-ld Continued (AI.Gal_.As, x=O.36).

eV em-! £! £2 n k a (em-!) R
0.0527 425 6.55 0.154 2.560 0.030 0.192
0.0533 430 6.80 0.172 2.607 0.033 0.198
0.0539 435 7.00 0.191 2.646 0.036 0.204
0.0545 440 7.19 0.198 2.681 0.037 0.209
0.0552 445 7.35 0.206 2.711 0.038 0.213
0.0558 450 7.50 0.214 2.738 0.039 0.216
0.0564 455 7.63 0.215 2.762 0.039 0.220
0.057 460 7.75 0.223 2.784 0.040 0.222
0.0576 465 7.86 0.224 2.804 0.040 0.225
0.0583 470 7.96 0.220 2.822 0.039 0.227
0.0589 475 8.05 0.221 2.838 0.039 0.229
0.0595 480 8.14 0.223 2.853 0.039 0.231
0.0601 485 8.21 0.224 2.866 0.039 0.233
0.0607 490 8.29 0.219 2.879 0.038 0.235
0.0614 495 8.36 0.220 2.891 0.038 0.236
0.062 500 8.42 0.221 2.902 0.038 0.238
Table C2-VI-Ie Optical constants in the reststrahlen region ofAI.Gal_.As with x=O.44
at300K.
eV em-! £! q n k a (em-!) R
0.0248 200 14.23 0.551 3.773 0.073 1.84E+02 0.338
0.0254 205 14.46 0.624 3.803 0.082 2.10E+02 0.341
0.026 210 14.72 0.706 3.838 0.092 2.42E+02 0.344
0.0266 215 15.03 0.807 3.878 0.104 2.82E+02 0.348
0.0273 220 15.41 0.950 3.927 0.121 3.33E+02 0.353
0.0279 225 15.86 1.132 3.985 0.142 4.01E+02 0.359
0.0285 230 16.43 1.379 4.057 0.170 4.93E+02 0.366
0.0291 235 17.17 1.759 4.149 0.212 6.25E+02 0.375
0.0297 240 18.17 2.341 4.271 0.274 8.28E+02 0.387
0.0304 245 19.56 3.374 4.439 0.380 1.17E+03 0.403
0.031 250 21.58 5.431 4.682 0.580 1.82E+03 0.426
0.0312 252 22.60 6.924 4.808 0.720 2.27E+03 0.438
0.0315 254 23.68 9.021 4.951 0.911 2.9IE+03 0.454
0.0317 256 24.57 12.25 5.100 1.201 3.86E+03 0.472
0.032 258 24.46 17.12 5.211 1.643 5.33E+03 0.495
0.0322 260 21.36 23.56 5.156 2.285 7.47E+03 0.522
0.0325 262 12.88 28.42 4.695 3.027 9.97E+03 0.548
0.0327 264 2.21 25.99 3.761 3.455 1.15E+04 0.565
0.033 266 -3.24 18.30 2.770 3.303 1.10E+04 0.559
0.0332 268 -3.51 11.54 2.068 2.790 9.40E+03 0.519
0.0335 270 -1.87 7.235 1.674 2.161 7.33E+03 0.434
0.0337 272 0.03 4.666 1.533 1.522 5.20E+03 0.298
0.034 274 1.73 3.119 1.628 0.958 3.30E+03 0.168
0.0342 276 3.16 2.148 1.868 0.575 1.99E+03 0.127
0.0345 278 4.34 1.518 2.114 0.359 1.25E+03 0.139
0.0347 280 5.33 1.100 2.320 0.237 8.32E+02 0.162
0.035 282 6.15 0.810 2.486 0.163 5.76E+02 0.184
0.0352 284 6.87 0.603 2.623 0.115 4.1IE+02 0.201
Table C2·VI·le Continued (ALxGa}.xAs. x=O.44).

eV em'! £! £2 n k a (em'!) R
0.0354 286 7.48 0.460 2.737 0.084 3.03E+02 0.216
0.0357 288 8.03 0.357 2.834 0.063 2.29E+02 0.229
0.0359 290 8.52 0.286 2.919 0.049 1.78E+02 0.240
0.0362 292 8.96 0.233 2.993 0.039 1.43E+02 0.249
0.0364 294 9.36 0.196 3.060 0.032 1.20E+02 0.258
0.0367 296 9.74 0.175 3.121 0.028 1.05E+02 0.265
0.0369 298 10.09 0.165 3.177 0.026 9.71E+01 0.272
0.0372 300 10.43 0.161 3.229 0.025 9.41E+01 0.278
0.0374 302 10.75 0.164 3.279 0.025 9.56E+01 0.284
0.0377 304 11.06 0.173 3.326 0.026 1.01E+02 0.289
0.0379 306 11.37 0.189 3.372 0.028 1.09E+02 0.294
0.0382 308 11.67 0.212 3.417 0.031 1.21E+02 0.299
0.0384 310 11.98 0.242 3.461 0.035 1.35E+02 0.304
0.0387 312 12.29 0.273 3.506 0.039 1.53E+02 0.309
0.0389 314 12.60 0.312 3.550 0.044 1.74E+02 0.314
0.0392 316 12.92 0.360 3.595 0.050 1.99E+02 0.319
0.0394 318 13.26 0.415 3.642 0.057 2.27E+02 0.324
0.0397 320 13.61 0.480 3.690 0.065 2.60E+02 0.329
0.0399 322 13.98 0.554 3.740 0.074 2.98E+02 0.334
0.0402 324 14.38 0.637 3.793 0.084 3.42E+02 0.340
0.0404 326 14.81 0.739 3.850 0.096 3.94E+02 0.346
0.0407 328 15.28 0.860 3.910 0.110 4.54E+02 0.352
0.0409 330 15.78 1.010 3.975 0.127 5.25E+02 0.358
0.0412 332 16.35 1.181 4.046 0.146 6.09E+02 0.365
0.0414 334 16.98 1.394 4.124 0.169 7.l1E+02 0.372
0.0416 336 17.68 1.667 4.210 0.198 8.34E+02 0.381
0.0419 338 18.50 1.998 4.307 0.232 9.87E+02 0.389
0.0421 340 19.43 2.438 4.417 0.276 1.18E+03 0.399
0.0424 342 20.53 3.007 4.543 0.331 1.42E+03 0.411
0.0426 344 21.82 3.779 4.689 0.403 1.74E+03 0.423
0.0429 346 23.36 4.849 4.859 0.499 2. 17E+03 0.438
0.0431 348 25.20 6.396 5.060 0.632 2.77E+03 0.455
0.0434 350 27.40 8.722 5.299 0.823 3.62E+03 0.475
0.0436 352 29.89 12.34 5.578 1.106 4.89E+03 0.499
0.0439 354 32.23 18.21 5.884 1.547 6.88E+03 0.527
0.0441 356 32.73 27.60 6.146 2.245 1.00E+04 0.562
0.0444 358 26.87 40.27 6.135 3.282 1.48E+04 0.602
0.0446 360 10.23 48.39 5.463 4.429 2.00E+04 0.644
0.0449 362 -7.67 42.06 4.188 5.021 2.28E+04 0.679
0.0451 364 -15.02 29.19 2.984 4.891 2.24E+04 0.700
0.0454 366 -15.01 19.12 2.156 4.434 2.04E+04 0.709
0.0456 368 -12.71 12.80 1.632 3.921 1.8IE+04 0.707
0.0459 370 -10.15 8.923 1.297 3.440 1.60E+04 0.697
0.0461 372 -7.87 6.473 1.077 3.005 1.40E+04 0.677
0.0464 374 -5.96 4.858 0.930 2.612 1.23E+04 0.647
0.0466 376 -4.37 3.744 0.832 2.250 1.06E+04 0.605
0.0469 378 -3.05 2.957 0.774 1.910 9.07E+03 0.544
0.0471 380 -1.94 2.378 0.751 1.583 7.56E+03 0.461
0.0473 382 -1.00 1.945 0.770 1.263 6.06E+03 0.349
0.0476 384 -0.20 1.609 0.844 0.953 4.60E+03 0.217
Table C2-VI-le Continued (AlxGal.xAs. x=O.44).

eV em·1 £1 102 n k aCem· 1) R
0.0478 386 0.50 1.345 0.983 0.684 3.32E+03 0.106
0.0481 388 1.11 1.137 1.160 0.490 2.39E+03 0.054
0.0483 390 1.64 0.966 1.331 0.363 1.78E+03 0.043
0.0486 392 2.11 0.826 1.480 0.279 1.38E+03 0.049
0.0488 394 2.53 0.710 1.607 0.221 1.10E+03 0.061
0.0491 396 2.91 0.614 1.715 0.179 8.92E+02 0.073
0.0493 398 3.25 0.532 1.809 0.147 7.37E+02 0.086
0.0496 400 3.56 0.461 1.891 0.122 6. 16E+02 0.097
0.0502 405 4.22 0.329 2.056 0.080 4.07E+02 0.120
0.0508 410 4.76 0.236 2.182 0.054 2.76E+02 0.138
0.0514 415 5.20 0.164 2.281 0.036 1.87E+02 0.153
0.0521 420 5.57 0.113 2.361 0.024 1.25E+02 0.164
0.0527 425 5.89 0.073 2.428 0.015 7.94E+01 0.174
0.0533 430 6.17 0.040 2.484 0.008 4.49E+01 0.181
0.0539 435 6.41 0.015 2.532 0.003 1.83E+01 0.188
0.0545 440 6.63 0.000 2.574 0.000 0.194
0.0552 445 6.81 0.016 2.610 0.003 0.199
0.0558 450 6.98 0.032 2.642 0.006 0.203
0.0564 455 7.13 0.043 2.671 0.008 0.207
0.057 460 7.27 0.049 2.697 0.009 0.211
0.0576 465 7.40 0.054 2.720 0.010 0.214
0.0583 470 7.51 0.060 2.741 0.011 0.217
0.0589 475 7.62 0.066 2.760 0.012 0.219
0.0595 480 7.71 0.072 2.777 0.013 0.221
0.0601 485 7.80 0.073 2.793 0.013 0.224
0.0607 490 7.88 0.079 2.808 0.014 0.225
0.0614 495 7.96 0.079 2.822 0.014 0.227
0.062 500 8.03 0.079 2.834 0.014 0.229
Table C2-VI-lfOptical constants in the reststrahlen region of AlxGal.xAs with x=054

at300K.
eV em· 1 101 102 n k aCem·1) R
0.0248 200 13.60 0.575 3.688 0.078 1.95E+02 0.329
0.0254 205 13.78 0.646 3.713 0.087 2.24E+02 0.332
0.026 210 13.99 0.733 3.742 0.098 2.59E+02 0.335
0.0266 215 14.24 0.846 3.775 0.112 3.03E+02 0.338
0.0273 220 14.54 0.992 3.815 0.130 3.60E+02 0.342
0.0279 225 14.89 1.189 3.862 0.154 4.34E+02 0.347
0.0285 230 15.32 1.458 3.919 0.186 5.37E+02 0.353
0.0291 235 15.87 1.852 3.991 0.232 6.84E+02 0.361
0.0297 240 16.59 2.467 4.084 0.302 9.llE+02 0.370
0.0304 245 17.53 3.535 4.208 0.420 1.29E+03 0.383
0.031 250 18.66 5.607 4.367 0.642 2.02E+03 0.402
0.0312 252 19.06 6.991 4.436 0.788 2.50E+03 0.412
0.0315 254 19.22 8.909 4.495 0.991 3.16E+03 0.423
0.0317 256 18.76 11.47 4.514 1.271 4.09E+03 0.436
0.032 258 16.94 14.53 4.430 1.640 5.32E+03 0.449
0.0322 260 12.99 16.97 4.145 2.047 6.69E+03 0.459
Table C2.VI·ljContinued (AlxGa}.xAs. x=O.54).

eV em') t) £2 n k a Cern')) R
0.0325 262 7.59 16.78 3.606 2.327 7.66E+03 0.458
0.0327 264 3.43 13.54 2.949 2.295 7.61E+03 0.435
0.033 266 1.96 9.431 2.407 1.959 6.55E+03 0.377
0.0332 268 2.29 6.156 2.104 1.463 4.93E+03 0.285
0.0335 270 3.30 3.960 2.056 0.963 3.27E+03 0.199
0.0337 272 4.42 2.558 2.183 0.586 2.00E+03 0.166
0.034 274 5.46 1.658 2.362 0.351 1.21E+03 0.173
0.0342 276 6.36 1.073 2.531 0.212 7.34E+02 0.191
0.0345 278 7.13 0.679 2.674 0.127 4.45E+02 0.209
0.0347 280 7.81 0.419 2.795 0.075 2.62E+02 0.224
0.035 282 8.39 0.232 2.896 0.040 1.43E+02 0.237
0.0352 284 8.89 0.107 2.982 0.018 6.35E+01 0.248
0.0354 286 9.34 0.171 3.057 0.Q28 1.04E+01 0.257
0.0357 288 9.75 0.044 3.123 0.007 0.265
0.0359 290 10.13 0.089 3.183 0.014 0.272
0.0362 292 10.48 0.117 3.237 0.018 0.279
0.0364 294 10.80 0.131 3.286 0.020 0.285
0.0367 296 11.11 0.140 3.333 0.021 0.290
0.0369 298 11.40 0.142 3.377 0.021 0.295
0.0372 300 11.69 0.130 3.419 0.019 0.300
0.0374 302 11.97 0.125 3.460 0.018 0.304
0.0377 304 12.24 0.105 3.499 0.015 0.309
0.0379 306 12.52 0.092 3.539 0.013 0.313
0.0382 308 12.80 0.064 3.578 0.009 0.317
0.0384 310 13.08 0.036 3.617 0.005 0.321
0.0387 312 13.38 0.007 3.658 0.001 0.326
0.0389 314 13.68 0.030 3.699 0.004 1.57E+01 0.330
0.0392 316 13.99 0,075 3.741 0.010 3.79E+01 0.334
0.0394 318 14.33 0.121 3.785 0.016 6.3IE+01 0.339
0.0397 320 14.68 0.176 3.831 0.023 9.19E+01 0.343
0.0399 322 15.05 0.241 3.880 0.031 1.25E+02 0.348
0.0402 324 15.46 0.315 3.932 0.040 1.63E+02 0.353
0.0404 326 15.89 0.399 3.987 0.050 2.06E+02 0.359
0.0407 328 16.37 0.502 4.047 0.062 2.57E+02 0.365
0.0409 330 16.90 0.625 4.112 0.076 3.17E+02 0.371
0.0412 332 17.49 0.778 4.183 0.093 3.87E+02 0.377
0.0414 334 18.14 0.954 4.261 0.112 4.72E+02 0.384
0.0416 336 18.89 1.183 4.348 0.136 5.74E+02 0.392
0.0419 338 19.74 1.467 4.446 0.165 6.99E+02 0.401
0.0421 340 20.73 1.823 4.557 0.200 8.56E+02 0.410
0.0424 342 21.88 2.305 4.684 0.246 1.06E+03 0.421
0.0426 344 23.25 2.937 4.831 0.304 1.31E+03 0.433
0.0429 346 24.88 3.812 5.003 0.381 1.66E+03 0.447
0.0431 348 26.89 5.062 5.208 0.486 2. 13E+03 0.463
0.0434 350 29.34 6.927 5.454 0.635 2.79E+03 0.481
0.0436 352 32.34 9.823 5.751 0.854 3.78E+03 0.503
0.0439 354 35.85 14.57 6.105 1.193 5.31E+03 0.530
0.0441 356 39.21 22.66 6.500 1.743 7.80E+03 0.561
0.0444 358 39.53 36.24 6.825 2.655 1.19E+04 0.600
0.0446 360 28.80 53.82 6.702 4.015 1.82E+04 0.645
Table C2-VI-lfContinued (AI.Ga} .• As, x=054).

eV em· 1 £1 £2 n k a (em· 1) R
0.0449 362 3.36 59.78 5.623 5.316 2.42E+04 0.688
0.0451 364 -16.07 45.95 4.038 5.690 2.60E+04 0.720
0.0454 366 -20.50 29.84 2.802 5.325 2.45E+04 0.738
0.0456 368 -18.49 19.28 2.028 4.754 2.20E+04 0.745
0.0459 370 -15.21 13.03 1.552 4.197 1.95E+04 0.743
0.0461 372 -12.14 9.245 1.249 3.701 1.73E+04 0.734
0.0464 374 -9.56 6.837 1.047 3.265 1.53E+04 0.718
0.0466 376 -7.45 5.236 0.910 2.877 1.36E+04 0.695
0.0469 378 -5.72 4.119 0.815 2.527 1.20E+04 0.663
0.0471 380 -4.29 3.318 0.753 2.203 1.05E+04 0.620
0.0473 382 -3.08 2.720 0.717 1.897 9.lOE+03 0.562
0.0476 384 -2.07 2.265 0.707 1.602 7.73E+03 0.484
0.0478 386 -1.19 1.912 0.728 1.313 6.37E+03 0.382
0.0481 388 -0.44 1.631 0.790 1.032 5.03E+03 0.260
0.0483 390 0.22 1.405 0.905 0.776 3.80E+03 0.144
0.0486 392 0.80 1.218 1.061 0.574 2.83E+03 0.073
0.0488 394 1.31 1.065 1.224 0.435 2.16E+03 0.047
0.0491 396 1.77 0.936 1.372 0.341 1.70E+03 0.044
0.0493 398 2.18 0.829 1.501 0.276 1.38E+03 0.052
0.0496 400 2.55 0.735 1.612 0.228 1.l5E+03 0.062
0.0502 405 3.33 0.557 1.832 0.152 7.72E+02 0.089
0.0508 410 3.96 0.427 1.994 0.107 5.52E+02 0.111
0.0514 415 4.48 0.335 2.118 0.079 4.lOE+02 0.129
0.0521 420 4.92 0.262 2.218 0.059 3. llE+02 0.144
0.0527 425 5.28 0.207 2.299 0.045 2.39E+02 0.155
0.0533 430 5.60 0.161 2.367 0.034 1.85E+02 0.165
0.0539 435 5.88 0.126 2.424 0.026 1.43E+02 0.173
0.0545 440 6.12 0.099 2.473 0.020 1.10E+02 0.180
0.0552 445 6.33 0.075 2.516 0.015 8.38E+01 0.186
0.0558 450 6.52 0.056 2.553 0.011 6.2IE+01 0.191
0.0564 455 6.69 0.041 2.587 0.008 4.42E+01 0.196
0.057 460 6.84 0.026 2.616 0.005 2.91E+01 0.200
0.0576 465 6.99 0.016 2.643 0.003 1.64E+01 0.203
0.0583 470 7.11 0.005 2.667 0.001 0.207
0.0589 475 7.23 0.005 2.688 0.001 0.210
0.0595 480 7.33 0.011 2.708 0.002 0.212
0.0601 485 7.43 0.016 2.726 0.003 0.215
0.0607 490 7.52 0.022 2.743 0.004 0.217
0.0614 495 7.61 0.028 2.758 0.005 0.219
0.062 500 7.68 0.033 2.772 0.006 0.221
Table C2-VI-2a Optical constants in the interband transition region of Al.GaJ .• As with
x=0.099 at 300 K.
eV £1 £,. n k a (cm· 1) R
0.5 11.290 3.360 0.293
0.6 11.330 3.366 0.294
0.7 11.384 3.374 0.295
0.8 11.445 3.383 0.296
0.9 11.526 3.395 0.297
1 11.628 3.410 0.299
1.1 11.751 3.428 0.301
1.2 11.916 3.452 0.303
1.3 12.138 3.484 0.307
1.4 12.461 3.530 0.312
1.5 12.758 3.572 0.316
1.6 13.401 0.434 3.661 0.059 9.62E+03 0.326
1.7 13.521 0.600 3.678 0.082 1.4IE+04 0.328
1.8 13.798 0.738 3.716 0.099 1.8IE+04 0.332
1.9 14.237 0.962 3.775 0.127 2.45E+04 0.338
2 14.563 1.305 3.820 0.171 3.46E+04 0.343
2.1 14.981 1.540 3.876 0.199 4.23E+04 0.349
2.2 15.471 1.864 3.940 0.237 5.27E+04 0.356
2.3 16.067 2.216 4.018 0.276 6.43E+04 0.364
2.4 16.796 2.627 4.111 0.320 7.77E+04 0.373
2.5 18.732 3.225 4.220 0.382 9.68E+04 0.384
2.6 18.732 4.023 4.353 0.462 1.22E+05 0.397
2.7 20.080 5.196 4.518 0.575 1.57E+05 0.413
2.8 21.744 7.213 4.725 0.763 2.17E+05 0.433
2.9 23.411 11.184 4.968 1.126 3.31E+05 0.461
3 20.038 17.765 4.838 1.836 5.58E+05 0.483
3.1 16.095 17.384 4.460 1.949 6.12E+05 0.469
3.2 13.306 18.598 4.253 2.187 7.09E+05 0.475
3.3 10.072 17.026 3.864 2.203 7.37E+05 0.458
3.4 9.205 15.494 3.690 2.100 7.24E+05 0.441
3.5 8.846 14.619 3.601 2.030 7.20E+05 0.430
3.6 8.699 14.060 3.552 1.979 7.22E+05 0.423
3.7 8.690 13.736 3.532 1.945 7.29E+05 0.419
3.8 8.809 13.609 3.537 1.924 7.4IE+05 0.417
3.9 9.028 13.692 3.566 1.920 7.59E+05 0.419
4 9.342 14.017 3.618 1.937 7.85E+05 0.423
4.1 9.734 14.664 3.697 1.983 8.24E+05 0.431
4.2 10.146 15.766 3.801 2.074 8.83E+05 0.444
4.3 10.364 17.571 3.922 2.240 9.76E+05 0.464
4.4 9.851 20.145 4.017 2.507 1.12E+06 0.489
4.5 7.811 23.065 4.010 2.876 1.31E+06 0.519
4.6 4.236 24.731 3.829 3.229 1.51E+06 0.546
4.7 0.537 25.535 3.611 3.536 1.68E+06 0.572
4.8 -4.119 25.136 3.267 3.846 1.87E+06 0.604
4.9 -8.604 22.369 2.772 4.036 2.ooE+06 0.637
5 -10.991 17.583 2.207 3.983 2.02E+06 0.662
5.1 -10.408 13.478 1.819 3.704 1.91E+06 0.664
5.2 -9.116 11.220 1.634 3.433 1.81E+06 0.651
5.3 -8.043 9.870 1.531 3.223 1.73E+06 0.635
Table C2·VI·2a Continued (AI.Gal .• As, x=0.099).

eV £1 ~ n k <X (em· l ) R
5.4 ·7.227 8.928 1.459 3.059 1.67E+06 0.621
5.5 -6.550 8.225 1.408 2.921 1.63E+06 0.607
5.6 -5.963 7.677 1.371 2.800 1.59E+06 0.593
5.7 -5.468 7.256 1.345 2.698 1.56E+06 0.579
5.8 -5.032 6.937 1.330 2.608 1.53E+06 0.565
5.9 -4.702 6.692 1.318 2.538 1.52E+06 0.554
6 -4.321 6.442 1.311 2.457 1.49E+06 0.539
Table C2·VI·2b Optical constants in the interband transition region ofAI.Gal .• As with
x=0.198 at 300 K.
eV £1 ~ n k <X (em· l ) R
0.5 10.949 3.309 0.287
0.6 10.996 3.316 0.288
0.7 11.049 3.324 0.289
0.8 11.116 3.334 0.290
0.9 11.196 3.346 0.291
1 11.296 3.361 0.293
1.1 11.418 3.379 0.295
1.2 11.567 3.401 0.298
1.3 11.758 3.429 0.301
1.4 12.006 3.465 0.305
1.5 11.950 3.457 0.304
1.6 12.502 0.017 3.536 0.002 3.9OE+02 0.313
1.7 13.213 0.145 3.635 0.020 3.ooE+02 0.323
1.8 13.402 0.601 3.662 0.082 1.50E+04 0.326
1.9 13.682 0.696 3.700 0.094 1.81E+04 0.330
2 14.119 0.887 3.759 0.118 2.39E+04 0.337
2.1 14.529 1.260 3.815 0.165 3.52E+04 0.343
2.2 14.946 1.567 3.871 0.202 4.51E+04 0.349
2.3 15.464 1.909 3.940 0.242 5.65E+04 0.356
2.4 16.096 2.313 4.022 0.288 6.99E+04 0.364
2.5 16.845 2.812 4.118 0.341 8.65E+04 0.374
2.6 17.767 3.460 4.235 0.409 1.08E+05 0.386
2.7 18.893 4.363 4.375 0.499 1.36E+05 0.399
2.8 20.272 5.787 4.547 0.636 1.8IE+05 0.417
2.9 21.877 8.225 4.757 0.865 2.54E+05 0.439
3 22.682 13.063 4.943 1.322 4.02E+05 0.467
3.1 17.781 17.110 4.607 1.857 5.83E+05 0.472
3.2 15.264 17.325 4.379 1.978 6.42E+05 0.467
3.3 11.927 17.808 4.084 2.180 7.29E+05 0.466
3.4 9.908 16.040 3.792 2.115 7.29E+05 0.447
3.5 9.315 14.923 3.668 2.034 7.22E+05 0.434
3.6 9.061 14.254 3.602 1.979 7.22E+05 0.426
3.7 8.987 13.874 3.572 1.942 7.28E+05 0.421
3.8 9.035 13.714 3.568 1.922 7.40E+05 0.419
3.9 9.199 13.758 3.588 1.917 7.58E+05 0.420
4 9.458 14.047 3:633 1.933 7.84E+05 0.423
4.1 9.795 14.630 3.701 1.976 8.21E+05 0.431
Table C2·VI·2b Continued (AlxGal.xAs. x=0.198).

eV 10 1 102 n k a (cm· l ) R
4.2 10.163 15.627 3.795 2.059 8.76E+05 0.443
4.3 10.429 17.254 3.911 2.206 9.6IE+05 0.460
4.4 10.147 19.686 4.018 2.449 1.09E+06 0.485
4.5 8.568 22.715 4.053 2.803 1.28E+06 0.514
4.6 5.008 25.295 3.924 3.223 1.50E+06 0.547
4.7 0.459 26.010 3.638 3.575 1.70E+06 0.576
4.8 -4.468 25.047 3.238 3.867 1.88E+06 0.606
4.9 -8.500 21.861 2.734 3.997 1.99E+06 0.634
5 -10.433 17.302 2.210 3.914 1.98E+06 0.655
5.1 -9.895 13.595 1.860 3.654 1.89E+06 0.654
5.2 -8.795 11.429 1.677 3.407 1.80E+06 0.643
5.3 -7.837 10.058 1.567 3.208 I.72E+06 0.629
5.4 -7.075 9.089 1.490 3.049 1.67E+06 0.615
5.5 -6.426 8.346 1.433 2.912 1.62E+06 0.602
5.6 -5.865 7.785 1.393 2.794 1.59E+06 0.588
5.7 -5.360 7.346 1.366 2.688 1.55E+06 0.574
5.8 -4.943 7.013 1.349 2.600 1.53E+06 0.561
5.9 -4.611 6.776 1.339 2.531 1.51E+06 0.549
6 -4.261 6.551 1.333 2.457 1.49E+06 0.536
Table C2·VI·2c Optical constants in the interband transition region ofAl.Gal.xAs with
x=0315 at 300 K.
eV 10 1 102 n k a (cm· l ) R
0.5 10.543 3.247 0.280
0.6 10.589 3.254 0.281
0.7 10.647 3.263 0.282
0.8 10.713 3.273 0.283
0.9 10.791 3.285 0.284
1 10.890 3.300 0.286
1.1 11.002 3.317 0.288
1.2 11.142 3.338 0.290
1.3 11.310 3.363 0.293
1.4 11.519 3.394 0.297
1.5 11.585 3.404 0.298
1.6 11.945 3.456 0.304
1.7 12.312 3.509 0.310
1.8 12.901 0.058 3.592 0.008 1.46E+03 0.319
1.9 13.309 0.812 3.650 0.111 2.14E+04 0.325
2 13.597 1.070 3.690 0.145 2.94E+04 0.330
2.1 14.036 1.250 3.750 0.167 3.55E+04 0.336
2.2 14.516 1.543 3.815 0.202 4.51E+04 0.343
2.3 14.937 1.755 3.872 0.227 5.28E+04 0.349
2.4 15.495 2.038 3.945 0.258 6.28E+04 0.356
2.5 16.167 2.460 4.032 0.305 7.73E+04 0.365
2.6 16.963 3.037 4.135 0.367 9.68E+04 0.376
2.7 17.928 3.794 4.258 0.446 1.22E+05 0.388
2.8 19.089 4.900 4.404 0.556 1.58E+05 0.403
2.9 20.478 6.614 4.582 0.722 2. 12E+05 0.421
Table C2-VI-2c Continued (AI.Gal_.As. x=0315)_

eV £\ £2 n k a (cm-\) R
3 21.832 9.680 4.781 1.012 3.08E+05 0.445
3.1 20.854 15.031 4.825 1.558 4.89E+05 0.469
3.2 16.329 16.746 4.456 1.879 6.09E+05 0.465
3.3 13.867 17.334 4.246 2.041 6.83E+05 0.464
3.4 10.827 16.737 3.922 2.134 7.35E+05 0.455
3.5 9.653 15.298 3.724 2.054 7.29E+05 0.439
3.6 9.242 14.445 3.633 1.988 7.26E+05 0.428
3.7 9.094 13.968 3.589 1.946 7.30E+05 0.422
3.8 9.095 13.734 3.575 1.921 7.40E+05 0.419
3.9 9.212 13.739 3.588 1.914 7.57E+05 0.419
4 9.427 13.973 3.625 1.927 7.81E+05 0.422
4.1 9.723 14.492 3.686 1.966 8. 17E+05 0.429
4.2 10.065 15.387 3.772 2.040 8.68E+05 0.440
4.3 10.362 16.868 3.883 2.172 9.47E+05 0.456
4.4 10.266 19.139 3.999 2.393 1.07E+06 0.479
4.5 9.029 22.204 4.062 2.733 1.25E+06 0.509
4.6 5.766 25.299 3.982 3.177 1.48E+06 0.544
4.7 0.383 26.540 3.669 3.617 1.72E+06 0.579
4.8 -4.850 24.805 3.196 3.881 1.89E+06 0.609
4.9 -8.451 21.238 2.684 3.957 1.97E+06 0.633
5 -9.954 16.908 2.198 3.845 1.95E+06 0.648
5.1 -9.460 13.534 1.878 3.604 1.86E+06 0.647
5.2 -8.520 11.454 1.696 3.376 1.78E+06 0.637
5.3 -7.656 10.078 1.581 3.187 1.7IE+06 0.624
5.4 -6.940 9.074 1.497 3.030 1.66E+06 0.612
5.5 -6.308 8.313 1.437 2.893 1.61E+06 0.598
5.6 -5.765 7.734 1.393 2.776 1.58E+06 0.585
5.7 -5.255 7.296 1.367 2.669 1.54E+06 0.570
5.8 -4.814 6.967 1.352 2.577 1.51E+06 0.556
5.9 -4.471 6.698 1.338 2.502 1.50E+06 0.544
6 -4.156 6.583 1.347 2.443 1.49E+06 0.531
Table C2-VI-2d Optical constants in the interband transition region of AI.Gal_.As with
x=0.419 at 300 K.
eV £\ £2 n k a (cm-\) R
0.5 10.176 3.190 0.273
0.6 10.227 3.198 0.274
0.7 10.278 3.206 0.275
0.8 10.343 3.216 0.276
0.9 10.426 3.229 0.278
1 10.517 3.243 0.279
1.1 10.628 3.260 0.281
1.2 10.758 3.280 0.284
1.3 10.916 3.304 0.287
1.4 11.102 3.332 0.290
1.5 11.160 3.341 0.291
1.6 11.412 3.378 0.295
1.7 11.709 3.422 0.300
Table C2-VI-2d Continued (AI.Ga}_.As. x=0.419).

eV 1:) 10 2 n k a (em-I) R
1.8 12.106 3.479 0.306
1.9 12.669 0.018 3.559 0.003 4.90E+02 0.315
2 13.423 0.431 3.664 0.059 1.19E+04 0.326
2.1 13.578 0.735 3.686 0.100 2. 12E+04 0.329
2.2 14.022 1.003 3.747 0.134 2.99E+04 0.335
2.3 14.562 1.357 3.820 0.178 4.14E+04 0.343
2.4 15.015 1.700 3.881 0.219 5.33E+04 0.350
2.5 15.582 2.120 3.957 0.268 6.79E+04 0.358
2.6 16.279 2.581 4.047 0.319 8.40E+04 0.367
2.7 17.103 3.202 4.154 0.385 1.05E+OS 0.378
2.8 18.100 4.037 4.280 0.472 1.34E+05 0.391
2.9 19.273 5.279 4.430 0.596 1.75E+05 0.406
3 20.591 7.236 4.605 0.786 2.39E+05 0.425
3.1 21.579 10.694 4.778 1.119 3.52E+05 0.448
3.2 19.457 15.439 4.706 1.640 5.32E+05 0.466
3.3 15.873 16.459 4.401 1.870 6.25E+05 0.461
3.4 13.237 17.043 4.172 2.042 7.04E+OS 0.460
3.5 10.814 16.101 3.887 2.071 7.35E+05 0.448
3.6 9.940 14.982 3.736 2.005 7.32E+05 0.435
3.7 9.622 14.365 3.668 1.958 7.34E+05 0.427
3.8 9.516 14.059 3.640 1.931 7.44E+05 0.424
3.9 9.549 14.005 3.640 1.924 7.60E+05 0.423
4 9.696 14.201 3.667 1.936 7.85E+05 0.425
4.1 9.942 14.663 3.719 1.971 8. 19E+OS 0.431
4.2 10.229 15.482 3.794 2.040 8.69E+05 0.441
4.3 10.519 16.846 3.897 2.161 9.42E+05 0.456
4.4 10.530 18.973 4.014 2.363 1.05E+06 0.477
4.5 9.587 22.083 4.103 2.691 1.23E+06 0.507
4.6 6.468 25.594 4.054 3.157 1.47E+06 0.543
4.7 0.644 27.217 3.733 3.646 1.74E+06 0.582
4.8 -5.043 25.014 3.200 3.909 1.90E+06 0.611
4.9 -8.234 21.217 2.695 3.937 1.96E+06 0.630
5 -9.614 17.074 2.234 3.822 1.94E+06 0.644
5.1 -9.238 13.861 1.926 3.598 1.86E+06 0.642
5.2 -8.428 11.775 1.740 3.384 1.78E+06 0.633
5.3 -7.643 10.329 1.613 3.201 1.72E+06 0.622
5.4 -6.964 9.277 1.523 3.047 1.67E+06 0.611
5.5 -6.334 8.469 1.456 2.908 1.62E+06 0.598
5.6 -5.765 7.828 1.406 2.783 1.58E+06 0.584
5.7 -5.259 7.365 1.377 2.675 1.55E+06 0.570
5.8 -4.787 6.985 1.357 2.574 1.51E+06 0.554
5.9 -4.465 6.767 1.350 2.S07 1.50E+06 0.543
6 -4.124 6.602 1.353 2.440 1.48E+06 0.529
Table C2-VI-2e Optical constants in the interband transition region of AI.Ga}_.As with
x=O.49J at 300 K.
eV 101 1:2 n k a (em-I) R

0.5 9.923 3.1S0 0.268
Table C2-VI-2e Continued (AI.Gal .• As,x=O.491).

eV £1 ~ n k a (cm·1) R
0.6 9.967 3.157 0.269
0.7 10.024 3.166 0.270
0.8 10.087 3.176 0.272
0.9 10.163 3.188 0.273
1 10.253 3.202 0.275
1.1 10.362 3.219 0.277
1.2 10.485 3.238 0.279
1.3 10.634 3.261 0.282
1.4 10.811 3.288 0.285
1.5 10.780 3.283 0.284
1.6 11.080 3.329 0.289
1.7 11.344 3.368 0.294
1.8 11.676 3.417 1.00E-t01 0.299
1.9 12.089 3.477 2.00E-t01 0.306
2 12.659 0.016 3.558 0.002 4.60E+02 0.315
2.1 14.423 0.647 3.665 0.088 1.88E-t04 0.327
2.2 13.639 0.985 3.696 0.133 2.97E-t04 0.330
2.3 14.115 1.234 3.761 0.164 3.83E+04 0.337
2.4 14.685 1.571 3.838 0.205 4.98E+04 0.345
2.5 15.176 1.914 3.903 0.245 6.2IE+04 0.352
2.6 15.797 2.331 3.985 0.292 7.71E+04 0.361
2.7 16.525 2.900 4.081 0.355 9.72E+04 0.371
2.8 17.411 3.596 4.195 0.429 1.22E-t05 0.382
2.9 18.445 4.623 4.328 0.534 1.57E+05 0.396
3 19.629 6.132 4.483 0.684 2.08E+05 0.413
3.1 20.801 8.624 4.654 0.926 2.91E+05 0.433
3.2 20.801 12.735 4.753 1.340 4.34E-t05 0.455
3.3 17.419 15.823 4.525 1.748 5.85E-t05 0.461
3.4 14.745 16.502 4.294 1.922 6.62E-t05 0.459
3.5 12.074 16.529 4.034 2.049 7.27E+05 0.454
3.6 10.534 15.419 3.822 2.017 7.36E-t05 0.440
3.7 9.992 14.670 3.724 1.969 7.39E-t05 0.431
3.8 9.771 14.294 3.680 1.942 7.48E-t05 0.427
3.9 9.737 14.190 3.671 1.933 7.64E-t05 0.425
4 9.821 14.346 3.688 1.945 7.88E+05 0.427
4.1 9.995 14.768 3.730 1.980 8.23E-t05 0.433
4.2 10.237 15.540 3.798 2.046 8.71E+05 0.442
4.3 10.502 16.815 3.894 2.159 9.41E+05 0.456
4.4 10.547 18.847 4.009 2.351 1.05E-t06 0.476
4.5 9.752 21.915 4.107 2.668 1.22E+06 0.505
4.6 6.678 25.624 4.072 3.147 1.47E+06 0.543
4.7 0.636 27.202 3.731 3.645 1.74E+06 0.582
4.8 -5.044 24.850 3.187 3.899 1.90E+06 0.611
4.9 -8.024 20.971 2.686 3.904 1.94E+06 0.627
5 -9.278 17.038 2.250 3.787 1.92E+06 0.639
5.1 -9.003 13.967 1.951 3.579 1.85E+06 0.637
5.2 -8.301 11.910 1.763 3.378 1.78E+06 0.630
5.3 -7.573 10.444 1.632 3.199 1.72E-t06 0.620
5.4 -6.923 9.330 1.532 3.045 1.67E+06 0.609
5.5 -6.293 8.487 1.462 2.903 1.62E+06 0.596
Table C2-VI-2e Continued (AI.Ga} .• As, x=0.491).
eV £1 £2 n k a (cm· l ) R
5.6 -5.733 7.849 1.412 2.780 1.58E+06 0.583
5.7 -5.205 7.351 1.379 2.666 1.54E+06 0.568
5.8 -4.755 7.018 1.364 2.572 1.51E+06 0.553
5.9 -4.344 6.790 1.363 2.490 1.49E+06 0.537
6 -3.983 6.608 1.366 2.418 1.47E+06 0.523
Table C2-VI-2JOptical constants in the interband transition region of AI.Ga} .• As with

x=0.590 at 300 K.
eV £1 ~ n k a (cm· l ) R
0.5 9.585 3.096 0.262
0.6 9.629 3.103 0.263
0.7 9.685 3.112 0.264
0.8 9.747 3.122 0.265
0.9 9.816 3.l33 0.266
1 9.904 3.147 0.268
1.1 10.005 3.163 0.270
1.2 10.125 3.182 0.272
1.3 10.259 3.203 0.275
1.4 10.414 3.227 0.278
1.5 10.480 3.237 0.279
1.6 10.721 3.274 0.283
1.7 10.973 3.3l3 0.288
1.8 11.247 3.354 0.292
1.9 11.591 3.405 0.298
2 12.017 3.467 1.00E+Ol 0.305
2.1 12.575 0.034 3.546 0.005 1.03E+03 0.314
2.2 l3.380 0.458 3.658 0.063 1.40E+04 0.326
2.3 13.599 0.931 3.690 0.126 2.94E+04 0.329
2.4 14.097 1.181 3.758 0.157 3.82E+04 0.337
2.5 14.682 1.574 3.837 0.205 5.20E+04 0.345
2.6 15.208 2.047 3.909 0.262 6.9OE+04 0.353
2.7 15.837 2.532 3.992 0.317 8.68E+04 0.362
2.8 16.600 3.140 4.092 0.384 1.09E+05 0.372
2.9 17.493 3.936 4.208 0.468 1.37E+05 0.384
3 18.517 5.Q70 4.343 0.584 1.78E+05 0.399
3.1 19.653 6.784 4.497 0.754 2.37E+05 0.416
3.2 20.560 9.557 4.649 1.028 3.33E+05 0.436
3.3 19.663 l3.530 4.665 1.450 4.85E+05 0.454
3.4 16.542 15.536 4.429 1.754 6.04E+05 0.456
3.5 14.l37 16.255 4.224 1.924 6.83E+05 0.455
3.6 11.804 15.923 3.977 2.002 7.31E+05 0.447
3.7 10.713 15.077 3.822 1.973 7.40E+05 0.437
3.8 10.287 14.581 3.750 1.944 7.49E+05 0.431
3.9 1O.l31 14.417 3.725 1.935 7.65E+05 0.428
4 10.113 14.518 3.729 1.947 7.89E+05 0.430
4.1 10.210 14.870 3.758 1.978 8.22E+05 0.434
4.2 10.403 15.554 3.815 2.038 8.68E+05 0.442
4.3 10.647 16.723 3.903 2.142 9.34E+05 0.455
324 Ill-V ALLOY SEMICONDUCTORS
Table C2-VI-2fContinued (AI.Gal .• As, x=0590).

eV £1 £2 n k aCem· 1) R
4.4 10.746 18.612 4.015 2.318 1.03E+06 0.474
4.5 10.194 21.592 4.127 2.616 1.19E+06 0.502
4.6 7.325 25.601 4.120 3.107 1.45E+06 0.541
4.7 1.071 27.219 3.762 3.617 1.72E+06 0.579
4.8 -4.574 24.901 3.221 3.866 1.88E+06 0.607
4.9 -7.553 21.268 2.740 3.881 1.93E+06 0.623
5 -8.921 17.385 2.304 3.772 1.91E+06 0.633
5.1 -8.797 14.375 2.007 3.581 1.85E+06 0.633
5.2 -8.246 12.245 1.805 3.392 1.79E+06 0.627
5.3 -7.589 10.682 1.661 3.217 1.73E+06 0.619
5.4 -6.945 9.504 1.553 3.059 1.67E+06 0.609
5.5 -6.321 8.600 1.475 2.915 1.63E+06 0.597
5.6 -5.732 7.920 1.422 2.785 1.58E+06 0.582
5.7 -5.195 7.413 1.389 2.669 1.54E+06 0.567
5.8 -4.701 7.030 1.370 2.565 1.51E+06 0.551
5.9 -4.301 6.810 1.370 2.485 1.49E+06 0.535
6 -3.936 6.704 1.385 2.420 1.47E+06 0.520
Table C2-VI-2g Optical constants in the interband transition region of AI.Gal .• As with
x=O.700 at 300 K.
eV £1 £2 n k aCem· 1) R
0.5 9.236 3.039 0.255
0.6 9.278 3.046 0.256
0.7 9.327 3.054 0.257
0.8 9.388 3.064 0.258
0.9 9.456 3.075 0.259
1 9.536 3.088 0.261
1.1 9.629 3.103 0.263
1.2 9.734 3.120 0.265
1.3 9.853 3.139 0.267
1.4 9.998 3.162 0.270
1.5 9.940 3.153 0.269
1.6 10.161 3.188 0.273
1.7 10.398 3.225 0.277
1.8 10.636 3.261 0.282
1.9 10.928 3.306 0.287
2 11.294 3.361 0.293
2.1 11.728 0.001 3.425 3.00E+01 0.300
2.2 12.252 0.003 3.500 9.00E+01 0.309
2.3 12.924 0.016 3.595 0.002 5.lOE+02 0.319
2.4 13.653 0.513 3.696 0.069 1.69E+04 0.330
2.5 14.012 0.969 3.746 0.129 3.28E+04 0.335
2.6 14.582 1.408 3.823 0.184 4.85E+04 0.344
2.7 15.200 1.918 3.906 0.245 6.72E+04 0.352
2.8 15.806 2.446 3.987 0.307 8.71E+04 0.361
2.9 16.538 3.058 4.084 0.374 1.10E+05 0.371
3 17.393 3.857 4.196 0.460 1.40E+05 0.383
3.1 18.378 4.965 4.325 0.574 1.80E+05 0.397
Table C2.VI.2g Continued (AlzGaJ_zAs, x=0.700).

eV £1 £2 n k a (em-I) R
3.2 19.450 6.576 4.471 0.735 2.39E+05 0.413
3.3 20.334 9.049 4.615 0.980 3.28E+05 0.432
3.4 19.925 12.658 4.665 1.357 4.68E+05 0.450
3.5 17.454 15.104 4.502 1.678 5.95E+05 0.456
3.6 15.128 16.217 4.319 1.877 6.85E+05 0.457
3.7 12.864 16.355 4.103 1.993 7.47E+05 0.453
3.8 11.550 15.837 3.947 2.006 7.73E+05 0.446
3.9 10.928 15.538 3.868 2.009 7.94E+05 0.442
4 10.620 15.516 3.836 2.023 8.20E+05 0.442
4.1 10.487 15.765 3.835 2.055 8.54E+05 0.444
4.2 10.502 16.330 3.868 2.111 8.99E+05 0.450
4.3 10.595 17.349 3.932 2.206 9.62E+05 0.461
4.4 10.632 19.053 4.028 2.365 1.05E+06 0.478
4.5 10.160 21.908 4.142 2.645 1.21E+06 0.504
4.6 7.253 26.106 4.144 3.150 1.47E+06 0.544
4.7 0.897 27.338 3.758 3.637 1.73E+06 0.581
4.8 -4.518 24.762 3.214 3.853 1.87E+06 0.606
4.9 -7.292 21.512 2.777 3.873 1.92E+06 0.620
5 -8.809 17.839 2.354 3.788 1.92E+06 0.632
5.1 -8.906 14.834 2.049 3.620 1.87E+06 0.634
5.2 -8.526 12.599 1.829 3.445 1.82E+06 0.632
5.3 -7.924 10.863 1.662 3.269 1.76E+06 0.626
5.4 -7.215 9.572 1.545 3.098 1.70E+06 0.616
5.5 -6.541 8.613 1.462 2.946 1.64E+06 0.603
5.6 -5.908 7.903 1.407 2.809 1.59E+06 0.589
5.7 -5.337 7.391 1.375 2.688 1.55E+06 0.573
5.8 -4.796 7.046 1.365 2.581 1.52E+06 0.554
5.9 -4.348 6.811 1.366 2.493 1.49E+06 0.537
6 -3.991 6.683 1.377 2.426 1.48E+06 0.523
Table C2·VI·2h Optical constants in the interband transition region of AlxGaJ_xAs with
x=0.804 at 300 K.
eV £1 £2 n k a (em-I) R
0.5 8.928 2.988 0.248
0.6 8.970 2.995 0.249
0.7 9.018 3.003 0.250
0.8 9.072 3.012 0.251
0.9 9.132 3.022 0.253
1 9.211 3.035 0.254
1.1 9.296 3.049 0.256
1.2 9.394 3.065 0.258
1.3 9.505 3.083 0.260
1.4 9.629 3.103 0.263
1.5 9.761 3.124 0.265
1.6 9.902 3.147 0.268
1.7 10.068 3.173 0.271
1.8 10.251 3.202 0.275
1.9 10.472 3.236 0.279
Table C2-VI-2h Continued (AlxGal_xAs. x=0.804).

eV £1 £2 n k ex (em· 1) R
2 10.739 3.277 0.283
2.1 11.038 3.322 0.289
2.2 11.408 3.378 0.295
2.3 11.834 0.021 3.440 0.003 6.40E+02 0.302
2.4 12.382 0.028 3.519 0.004 8.70E+02 0.311
2.5 13.217 0.095 3.635 0.013 3.30E+03 0.323
2.6 13.964 0.778 3.738 0.104 2.74E+04 0.334
2.7 14.315 1.219 3.787 0.161 4.40E+04 0.340
2.8 14.948 1.588 3.872 0.205 5.81E+04 0.349
2.9 15.613 2.186 3.961 0.276 8.13E+04 0.358
3 16.281 2.859 4.050 0.353 1.07E+05 0.368
3.1 17.072 3.631 4.155 0.437 1.37E+05 0.379
3.2 18.001 4.628 4.277 0.541 1.75E+05 0.392
3.3 19.007 6.046 4.413 0.685 2.29E+05 0.407
3.4 20.017 8.120 4.562 0.890 3.07E+05 0.425
3.5 20.339 11.191 4.667 1.199 4.25E+05 0.444
3.6 18.845 14.402 4.613 1.561 5.70E+05 0.456
3.7 16.603 16.242 4.462 1.820 6.82E+05 0.462
3.8 14.152 17.179 4.267 2.013 7.76E+05 0.463
3.9 12.254 12.255 4.078 2.092 8.27E+05 0.459
4 11.207 11.207 3.962 2.119 8.59E+05 0.456
4.1 10.644 10.643 3.904 2.144 8.9IE+05 0.455
4.2 10.390 10.392 3.893 2.183 9.30E+05 0.458
4.3 10.340 10.334 3.928 2.256 9.83E+05 0.465
4.4 10.325 10.323 4.004 2.389 1.07E+06 0.479
4.5 9.944 9.941 4.112 2.639 1.20E+06 0.503
4.6 7.083 7.082 4.107 3.128 1.46E+06 0.542
4.7 1.239 1.235 3.751 3.582 1.71E+06 0.576
4.8 -3.723 -3.720 3.233 3.765 1.83E+06 0.597
4.9 -6.528 -6.524 2.833 3.815 1.89E+06 0.613
5 -8.275 -8.274 2.426 3.763 1.91E+06 0.625
5.1 -8.761 -8.758 2.110 3.635 1.88E+06 0.631
5.2 -8.627 -8.628 1.857 3.475 1.83E+06 0.633
5.3 -8.085 -8.089 1.661 3.293 1.77E+06 0.629
5.4 -7.300 -7.300 1.528 3.104 1.70E+06 0.619
5.5 -6.520 -6.517 1.447 2.935 1.64E+06 0.604
5.6 -5.838 -5.837 1.399 2.792 1.58E+06 0.587
5.7 -5.236 -5.237 1.370 2.667 1.54E+06 0.570
5.8 -4.720 -4.722 1.354 2.560 1.51E+06 0.552
5.9 -4.266 -4.267 1.360 2.473 1.48E+06 0.534
6 -3.932 -3.931 1.368 2.409 1.46E+06 0.520
Table C2-VI-2i Optical constants in the interband transition region of AlxGal_xAs with
x=0.900 at 300 K.
eV £1 £2 n k ex (em· 1) R
0.5 8.673 2.945 0.243
0.6 8.708 2.951 0.244
0.7 8.756 2.959 0.245
Table C2-VI-2i Continued (AlxGaJ.xAs, x=O.900).

eV £1 £2 n k ex (em· l ) R
0.8 8.803 2.967 0.246
0.9 8.863 2.977 0.247
1 8.934 2.989 0.249
1.1 9.012 3.002 0.250
1.2 9.102 3.017 0.252
1.3 9.199 3.033 0.254
1.4 9.315 3.052 0.256
1.5 9.443 3.073 0.259
1.6 9.585 3.096 0.262
1.7 9.747 3.122 0.265
1.8 9.929 3.151 0.269
1.9 10.131 3.183 0.272
2 10.375 3.221 0.277
2.1 10.647 3.263 0.282
2.2 10.969 3.312 0.287
2.3 11.350 3.369 0.294
2.4 11.820 3.438 0.302
2.5 12.419 3.524 0.311
2.6 13.228 3.637 0.323
2.7 14.493 3.807 0.341
The band gap of Al)nl_xAs changes from a direct gap [-0.36 eV,.x=O (InAs)] to an in-
direct gap [-2.16 eV, .x=1.0 (AlAs)]. A direct (r6c}-indirect (X6C) crossover occurs at
xc=0.67±O.01 with an energy of E g•c=2.05 eV [1]_
The Al)nl_xAs ternary alloy can be epitaxially grown on InP with x-OA8, only, since
the lattice constant of InP is between the values of the two binary parents AlAs and
InAs. Optical properties of Al)nl_xAs are not well known, except for Al0.48In0.52As
(.x=OA8). Data on the optical constants of Alo.48Ino.52As will be presented in Sec. C3-XI
as an end-point material of the AlxG~Inl_x_yAslInP quaternary system.
To our knowledge, no detailed data on the refractive-index dispersion of Al)nl_xAs
alloy has been reported so far. Recently, Baek et al. [2] reported the refractive indices n
and absorption coefficients a of MOCVD-grown Al)nl_.As films (0::;,x:::;;1.0) at wave-
lengths of 0.6328 and 1.530 11m at a growth temperature of 535°C using in situ laser
reflectometry. Their obtained results are listed in Table C2-VII-1. These data will be
used for precise in situ growth monitoring of multilayer structures.
TABLE C2-VII-l n and ex of MOCVD-grown AI.Inl.,As layers for wavelengths of 0.6328 and
1530 pm ata growth temperature of535°C. (From Baek etal. [2].)
N=0.6328 J.Ull N= 1.530 J.Ull
x n ex (x 104 em-I) n a (x 104 em-I)
0 4.255 3.675 6.2
0.04 4.125 3.574 6.0
0.14 4.042 3.471 4.6
0.34 3.996 9.3 3.392
0.44 3.820 9.1 3.315
0.64 3.600 2.7 3.177
0.78 3.531 3.108
0.86 3.400 3.048
1.00 3.264 2.924
The e(E) spectra for Al,Inl-xAs in the photon-energy range of 1.5-4.0 eV have been
obtained by Rodriguez and Armelles [3] at 300 K using SE. A set of the epitaxial lay-
ers (x=O-1.0) were grown on GaAs(lOO) substrates by MBE. The thickness of the epi-
taxiallayers was 0.8 11m. Figure C2-VII-l shows the measured results. (Note that the e
values in Fig. C2-VII-l were plotted with "arbitrary units," not absolute values.) By
analyzing the numerically calculated second-derivative spectra of e(E), these authors
also reported the x dependence of the E I - and EI+~I-gap energies [3]. More recently,
Kamlet and Terry [4] have measured the pseudodielectric-function spectra in the
1.5-5.6-eV spectral range of Alxlnl-xAs (0.305:::;;X:::;;0.635) grown on (lOO)InP by MBE.
The data were fit using a CP-based approach, and a numeric dielectric-function model
was generated with the AlAs fraction x as the only free variable.
328
en
:!::: en
c: .1:
c:
::J
.e
::J
.ci
~
~ ~
C\I
IIJ
IIJ
1.5 25 3 3.5 1.5 2.5 3 35

EN'ERGY(eVI ENERGY(eVI
Figure C2-VII-l e(E) spectra for AlJn1..As with (a) x=O, (b) x=O.07, (c) x=O.14, (d) x=O.S3, (e)
x=O.S9, (f) x=O.63, (g) x=O.87, (f) x=1.0 measured at room temperature. (From Rodrfguez and
Armelles [3].)
REFERENCES
1. Numerical Data and Functional Relationships in Science and Technology, edited
by K.-H. Hellwege and O. Madelung, Landolt-Bornstein, New Series, Group III,
Vol. 17, Pt. a (Springer, Berlin, 1982).
2. J.-H. Baek, B. Lee, S. W. Choi, J. H. Lee, and EI-Hang Lee, Appl. Phys. Lett. 68,
2355 (1996).
3. J. M. Rodriguez and G. Armelles, 1. Appl. Phys. 69, 965 (1991).
4. L. I. Kamlet and F. L. Terry, Jr., Thin Solid Films 313-314, 177 (1998).
Ga)n\_xAs is a material with a variety of potential and actual device applications (see,
e.g., Ref. [1]). The most commonly studied alloy composition is .x=OA7, the InP lattice
matching condition. A review of many important physical and semiconducting proper-
ties of lattice-matched and strained Ga)n\.xAs has been given in Refs. [1, 2]. Data on
the optical constants of lattice-matched Gao.47Ino.53As will be presented in Sec. C3-IV as
an end-point material of the Ga)n\.,PyAs\.)InP quaternary system.
The fundamental reflectivity spectra in the reststrahlen region of Ga)n\_xAs have
been measured by several authors [3,4]. Plasma-edge reflectance measurements [5]
have suggested that the e~ value of GaxIn\_xAs can be given by the linear interpolation
between the values of InAs (.x=0) and GaAs (.x=1.0) within the limits of experimental
error. The linearly interpolated values of e~ and e, for this alloy system have already
been given in Fig. 2.3.
The refractive indices in the transparent region of Ga)n\_xAs have been studied by
Takagi [6]. The samples with x>O.5 were grown on GaAs(100)-oriented 3° off by va-
por-phase epitaxy. In order to reduce strain in the epitaxial layer caused by lattice mis-
matching, a compositionally graded layer of about 10 11m thick was inserted between
the substrate and epitaxial layer. The n values in the 0.5-1.4-eV spectral region were
determined from reflectivity measurements. The measured data were analyzed based
on the single-oscillator model. We can recognize from these data a clear systematic
change in n vs. x (i.e., the n value below Eo decreases as x increases). No experimental
data has, however, been reported so far for samples with x::S;O.5.
Optical constants in the interband transition region of Ga)n\_xAs have been measured
by SE [7-9]. Two types of films were measured: thin pseudomorphic and "thick." The
pseudomorphic film was assumed to be fully strained, and the 1-2-l1m thick films on
GaAs were treated as fully relaxed. However, it has been shown that a considerable
amount of strain is maintained even in thick Ga)n\_xAs films on GaAs (see Ref. [7]).
The (n, k) data for Ga)n\_lAs films (.x=OA-O.915) grown on GaAs and InP have also
been obtained up to growth temperature (700°C) [10]. We have already shown in Fig.
3.27 the e(ro) and its derivative spectra for stained and relaxed Ga)n\_xAs (.x=O.76)
measured by SE.
Table C2-VIU-l lists the n values for photon energies below Eo for GaxIn\_xAs
(0.5~::S;1.0). They are calculated from a modified single-oscillator model with the dis-
persion parameters determined by Takagi [6].
REFERENCES
1. T. P. Pearsall, N. K. Dutta, and D. Pavlidis, in Properties of Lattice-Matched and
Strained Indium Gallium Arsenide, EMIS Datareviews Series No.8, edited by P.
Bhattacharya (INSPEC (lEE), London, 1993), pp. 265-305.
2. S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, lnAs,
330
3. G. Lucovsky and M. F. Chen, Solid State Commun. 8, 1397 (1970).

4. S. Yamazaki, A. Ushirokawa, and T. Katoda, l. Appl. Phys. 51,3722 (1980).
5. M. B. Thomas and J. C. Woolley, Can. 1. Phys. 49, 2052 (1971).
6. T. Takagi,Jpn. 1. Appl. Phys. 17, 1813 (1978).
7. S. A. Alterovitz, in Properties of Lattice-Matched and Strained Indium Gallium
Arsenide, EMIS Datareviews Series No.8, edited by P. Bhattacharya (INSPEC
(lEE), London, 1993), p. 187.
8. V. A. Yakovlev, Mat. Res. Soc. Symp. Proc. 340.373 (1994).
9. L. C. Andreani, D. De Nova, S. Di Lernia, M. Geddo, G. Guizzetti, M. Patrini, C.
Bocchi, A. Bosacchi, C. Ferrari, and S. Franchi,l. Appl. Phys. 78, 6745 (1995).
10. A. Kussmaul, S. Vernon, P. C. Colter, R. Sudharsanan, A. Mastrovito, K. J. Lin-
den, N. H. Karam, S. C. Warnick, and M. A. Dahleh, l. Electron. Mater. 26,1145
(1997).
TABLE C2·VIll·l Room-temperature refractive indices/or Ga.JnJ ..As as calculated/rom a

modified single-oscillator model [6]. See also Table 816-2/or 1nAs (x=O) and Table 812-1 for
GaAs (x=1.0).
n
eV x=O.5 .x=O.6 .x=O.7 .x=O.8 .x=O.9 x=1.0
0.5 3.40 3.38 3.36 3.35 3.34 3.33
0.6 3.43 3.40 3.38 3.37 3.35 3.34
0.7 3.47 3.44 3.41 3.39 3.37 3.36
0.8 3.53 3.47 3.44 3.41 3.39 3.38
0.9 3.53 3.48 3.45 3.42 3.40
1 3.53 3.49 3.45 3.43
1.1 3.54 3.49 3.46
1.2 3.54 3.49
1.3 3.54
1.4 3.62
The AlxGal_xSb alloy system possesses a singular point at which the composition region
separates into two parts, namely the GaSb side with a direct gap and the AlSb side with
an indirect gap. This type of singular point, i.e., a direct (r6 Hndirect (X6C-L6C) cross-
C
over point, occurs at x c-OA5 with an energy of E 8,c-1.3 eV [1].

Some data on the optical constants of AlxGal_xSb have been published [2-8]. The IR
optical constants have been reported in the spectral ranges of 180-520 cm- l [2],
200-400 cm- l [3], and 20-500 cm· l [4], Figure C2-IX-1 shows the IR reflectivity spec-
tra for this alloy (.x=0-1.0) [2]. The reststrahlen parameters obtained from this study
were presented in tabular form in Ref. [2].
The absorption spectra of AllxGa1_xSb (x:S;OAl) have been measured at T=2 K and
fitted including the contributions of the direct and indirect optical transitions [5]. The
AlxGal_xSb layers grown on (100) GaAs substrates by MBE were used in this study.
The refractive-index curves in the 0.5-1.3-eV region of AlxGa1_xSb (x=0-0.73) have
also been determined from reflectivity measurements by Ance and Van Mau [6]. They
also reported the composition dependence of the high-frequency dielectric constant E~.
x 0.00
-----------------
=
x = 0.05
w
U x = 0.15
Z
<{
I-
U
W
x = 0.35
--J
u..
w x = 0.50
a:
--J
<{
I-
Z
w
::!:
a:
w
a.
X
w
0.4 f=--------------
0.2
0.0 L-'_ _- ' -_ _- ' -_ _.L..---'-_ _--'-_ _- ' -_ _""'-----'-_ _--'--'
200 220 240 260 280 300 320 340 360 380
FREQUENCY (cm- 1 )
Figure C2-IX-l IR reflectivity spectra for AlxGal_xSb with 0~1.0 measured at room tem-
perature. Fiducial marks indicate a reflectance of DAD. (From Lucovsky et al. [2].)
332
The e~ curve varied quadratically with x, but the correction due to the bowing parame-
ter was very small. We list in Table C2-IX-l the n values obtained by Ance and Van
Mau [6].
TABLE C2-IX-l Room-temperature refractive indices for AI.GaJ."sb as

measured by Ance and Van Mau [6]. See also Table B13-2for GaSb (x=O)
and Table B8-2 for AISb (x=l.D).
N
eV x=0.1O x=0.24 x=0.34 x=0.42 x=O.48 x=0.73
0.5 3.731 3.628 3.547 3.499 3.427 3.222
0.55 3.733 3.633 3.548 3.500 3.429 3.225
0.6 3.735 3.635 3.550 3.504 3.434 3.227
0.65 3.737 3.639 3.553 3.510 3.436 3.231
0.7 3.746 3.646 3.559 3.511 3.444 3.236
0.75 3.759 3.648 3.566 3.520 3.452 3.238
0.8 3.793 3.662 3.578 3.526 3.467 3.241
0.85 3.845 3.679 3.594 3.537 3.482 3.249
0.9 3.892 3.720 3.622 3.556 3.498 3.252
0.95 3.907 3.789 3.656 3.582 3.520 3.260
1 3.919 3.808 3.696 3.619 3.543 3.268
1.05 3.932 3.813 3.748 3.664 3.572 3.277
1.1 3.950 3.824 3.793 3.709 3.607 3.291
1.15 3.977 3.845 3.795 3.734 3.642 3.308
1.2 3.870 3.798 3.744 3.679 3.328
1.25 3.758 3.354
1.3 3.783 3.386
The fundamental reflectivity in the interband transition region of Al.Ga 1_.Sb (x=0-
0.73) has been measured by Ance et al. [7]. We reproduce in Fig. C2-IX-2 their
obtained R spectra. We can identify, at least, eight CPs in these spectra (£1' £1+.:\1' Eo',
etc.). The variation of such CP energies with composition x was also reported [7].
SE was used to systematically characterize epitaxial Al.Ga1_.Sb layers for different x
compositions (x~0.5) in the 1.4--6-eV region [8,9]. The samples were grown on GaSb
substrates by MBE. The e(E) spectra obtained in this study are shown in Fig. C2-IX-3
[8]. The interband CP parameters and their composition dependence were determined
by performing an SCP line-shape analysis. Note that the SE e(£) data in Fig. C2-IX-3
were plotted after mathematically removing the effect of an oxide overlayer (G~03
oxide in thickness ranging from 2 to 3.5 nm).
REFERENCES
1. C. Alibert, A. Joullie, and A. M. Joullie, Phys. Rev. B 27,4946 (1983).
2. G. Lucovsky, K. Y. Cheng, and G. L. Pearson, Phys. Rev. B 12,4135 (1975).
3. N. Kitamura and T. Wada, Mater. Lett. 19, 105 (1994).
4. R. Ferrini, M. Galli, G. Guizzetti, M. Patrini, A. Bosacchi, S. Franchi, and R.

Magnanini, Phys. Rev. B 56, 7549 (1997).
5. A. Bignazzi, E. Grilli, M. Guzzi, C. Bocchi, A. Bosacchi, S. Franchi, and R. Mag-
nanini, Phys. Rev. B 57, 2295 (1998).
6. C. Ance and A. Nguyen Van Mau, J. Phys. C: Solid State Phys. 9, 1565 (1976).
7. C. Ance, J. Robin, A. Nguyen Van Mau, and G. Bougnot, J. Phys. C: Solid State
Phys. 8,1979 (1975).
8. S. Dilemia, M. Geddo, G. Guizzetti, M. Patrini, A. Bosacchi, S. Franchi, and R.
Magnanini, Mat. Res. Soc. Symp. Proc. 406, 389 (1996).
9. R. Ferrini, M. Patrini, and S. Franchi, J. Appl. Phys. 84,4517 (1998).
,....
~
'"
<II
~ l,
.......
'Cj
:0
l-
CI
...
<II
""
'c
;:)
Q::
Figure C2·IX·2 R(E) spectra for Al.Gal ...Sb with (A) x=O, (B) x=O.17, (C) x=O.22, (D) x=O.34,
(E) x=O.40, and (F) x=O.56 measured at room temperature. The vertical arrows numbered from
1 to 8 indicate the positions of the CP structures assigned to E10 EI+L11o Eo', Eo'+L1', E2 , E2+L12,
E2+/), and EI'. (From Ance et al. [7].)
30
AI,.GaI •• Sb --x~.O
20 - - - x=<l.1
••••• x=<l.3
10 _._. x~.5
w
.....
--x=1.0
0
-10
30
20
cSI
10
0
2.0 2.5 3.0 3.5 4.0 4.5
Energy (eV)
Figure C2·IX·3 £(E) spectra for Al.Ga, ....Sb layers (x=O-1.0) grown on GaSb substrates meas-
ured at room temperature. (From Dilernia et al. [8].)
The Gaxln1_xSb alloy is an attractive semiconductor material for optoelectronic devices
in the near-to-far IR spectral region. Although the optical response in GaSb and InSb
has recently been well established, very slight information is available on their alloy.
The IR reflectivity spectra of Ga)n1_xSb have been measured in the spectral ranges of
135-285 cm-1 [I] and 100-350 cm-1 [2]. Figure C2-X-I shows the results obtained by
Brodsky et al. [1]. The reststrahlen parameters obtained in this study were presented in
tabular form [I].
The fundamental reflectivity measurements in the far-IR region of Ga)n1_xSb have
been carried out by Aubin et al. [3]. From these data, the values of £_ were extracted
O.BO
0.60
0.40
x=1.0 - - - - - -
0.40'F-
0.301-
0.4oF-
0.30,b
0.4df-
0.30,b
0.4 Or
0.30,b
~ 0.40'F-
~ 0.301-
G0.40~
~ 0.30
~ ~:!~~
0.30
0.20
0.10 Figure C2-X-l IR reflectivity
spectra for Ga,In,_.Sb with the
O.4~r
0.30
0.20
ten compositions, from bottom
to top with increasing x (x=O,
0.05, 0.15, 0.30, 0.50, 0.60,
0.10
0.70, 0.84, 0.95, and 1.0),
o measured at room temperature.
0.60
(From Brodsky etal. [1].)
0.40 x=O
0.20
0.0 L-Ll-L-L-L-'-L...!--L-L-L-L--L-L....:L...!-L-L-I
100 120 140 160 IBO 200 220 240 260 280
WAVENUMBER Icm-l)
336
and found to vary linearly with x within the limit of experimental error.
The complete calculation of the refractive index in III-V Sb-based semiconductors
has been reported by Adachi [4]. In his model the refractive-index dispersion is ex-
plained by considering the contributions to the dielectric function by the various inter-
band transitions that play an important part in the optical response. The model, how-
ever, does not include the effects of free carriers, and thus the adequate estimation of
the refractive index of doped or excited materials may be impossible. Paskov [5], there-
fore, considered the free-carrier-related effects on the refractive-index dispersion. We
reproduce in Fig. C2-X-2 his obtained results [5]. For intrinsic materials (a), a well-
pronounced maximum is observed at E=Eo. The values of n below Eo decrease with
composition x. The p-type materials (b) show nearly the same behaviors as those in (a).
For n-type materials (c), the composition dependence of n is found to change consid-
4.20
~ 4.10
~ 4.00
~ 3.90
~ 3.80
(a)
~
3.70
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
4.20
~ 4.10 x .. O x=O.4 x=O.6 x=O.B x=1
~ 4.00
~ 3.90
~
~
3.80
It:
3.70
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Figure C2·X·2 Calculated n(E)
4.20 r---------------.,
spectra for GaJnl ..Sb (x=O-l.O):
(a) intrinsic materials, (b) p-type
x-O.4 x=O.6 x=O.B x-I materials withp=lxlO 18 cm-3, and
(c) n-type materials with
n=lxlQ18 cm-3• (From Paskov
[5].)
(e)
3.70 l.L.'---'L....-;L..-JL-.JL..-J--I--1--1---L---L---L---L--l
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
PHOTON ENERGY (eV)
erably. The n value at the maximum increases with x as a result of the reduction of the
band-filling effect.
Imai and Adachi [6] have reported the optical response in GaxInl_xSb in the 1.5-5.4-
e V photon-energy range at 300 K measured by SE. The bulk samples were grown by a
conventional Bridgman method. The measured SE spectra showed distinct structures at
energies of the E 1, E1+Ll1, Eo', Eo'+Ll', E2 , and EI' CPs. Figure C2-X-3 shows, as an
example, the £(E) spectrum of Ga)nl-xSb (x=0.5). Note that this spectrum was correct-
ed for oxide overlayer of 1.8 nm thick. The solid lines represent the theoretical fit of the
MDF calculation.
30
25 Gao.slno.sSb
20
15
10
'" 5
0
-5 Experimental
-10 - MDF
-15
1 2 3 456
Photon Energy (eV)
Figure C2·X·3 SE e(E) spectrum for Ga.In1..Sb with x=05 measured at 300. K. The solid lines
represent the theoretical fit of the MDF calculation. (From Imai and Adachi [6].)
Since the various CP parameters used in Ref. [6] have been specified in terms of the
alloy composition x alone, one can easily calculate the optical response in Ga)nl_xSb of
arbitrary composition x. Figure C2-X-4 shows the calculated results of n(E) and k(E)
for GaxInl-xSb alloy with x-composition increments of 0.25 [6]. We can understand that
these spectra shift toward the high-energy side with increasing x, in accordance with
the shift of the CP energies.
REFERENCES
1. M. H. Brodsky, G. Lucovsky, M. F. Chen, and T. S. Plaskett, Phys. Rev. B 2,
3303 (1970).
2. Z. C. Feng, S. Perkowitz, R. Rousina, and J. B. Webb, Can. J. Phys. 69, 386

(1991).
3. M. J. Aubin, M. B. Thomas, E. H. Van Tongerioo, and 1. C. Woolley, Can. 1.
Phys.47,631 (1969).
6. s. Imai and S. Adachi, Jpn. J. Appl. Phys. 32, 3860 (1993).
6 5
Gax lnl_xSb
5 4
4 3
c: ..!<:
3 2
-.-.-.••0.25 -.-.-.•..0.25
2 ----. •-0.50 ----. ...0.50
......... x-o.75 •........• -0.75
11 2 3 4 5 6 °1 2 4
3 5 6
Photon Energy (eV) Photon Energy (eV)
Figure C2-X-4 Calculated neE) and k(E) spectra for Ga.In1 .•Sb with x-composition increments
of 0.25 at 300 K. (From Imai and Adachi [6].)
XI GaNxP 1.x AND GaNxAs 1.x
It is interesting to study whether alloys between GaAs (GaP) and GaN can be formed
and what their properties would be. Note that the lattice mismatch of more than 20%
between GaN and GaAs is larger than for all previously investigated semiconductor
alloys. Therefore, this alloy system is ideally suited to study the consequences of lattice
mismatch on various alloy properties [1].
Theoretical works [2-5] have given information about the electronic energy-band
structure of this type of alloy systems. These works predict unexpectedly large bowing
in the band gap that could even result in a "negative" band gap at large x. Recent ex-
perimental results for GaNxAs 1.x (GaNJ\.J [2,6-13], in fact, showed a strong redshift
for small x compositions, indicating an unexpectedly large bowing in the band gap.
This example is shown in Fig. C2-XI-1, together with the square plots of the absorption
coefficient for GaNxAs 1•x (x=0.057 and 0.148) [11].
'" GaNO.14.Aso .• 52
12
oC '""'--(R'O
10 •
KOftdoW.cIl(RT}
l<ondowet_{rnQ
~ 1. <> Wer-ec ... (77tQ 1.2xl09
8 > -Sabl ..... (Rll
~
6
w'" 1.2 • 0 ~
'l'
S- 1.0
o E 8.0xl0 B
~ 4 0.00 0.05 0.10 0.15 .3-
Cl x(N) C\I
W 2
000
r:l
0 4.0xl0 B (b)
-2
(a)
-4
0.0 0.2 0.4 0.6 0.8 1.0 0.0 L....,,.-........rI£-L......:.......J-........<.:....................,J
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
x(N)
Energy (eV)
Figure C2-XI-l (a) Eg vs. x for GaNxAs 1.x at 300 K. (b) Absorption coefficient squared (ex?) as
a function of photon energy for GaNxAs 1•x with x-=0.057 and 0.148 at 300 K. (From Bi and Tu
[11].)
REFERENCES
1. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 51, 10568 (1995).
2. J. N. Baillargeon, K. Y. Cheng, G. E. Hofler, P. J. Pearah, and K. C. Hsieh, Appl.
Phys. Lett. 60,2540 (1992).
3. Su-Huai Wei and A. Zunger, Phys. Rev. Lett. 76, 664 (1996).
4. S. Nakajima, H. Ohshiba, T. Yang, and S. Sakai, Jpn. 1. Appl. Phys. 35, 5602
(1996).
340
5. S. Miyoshi and K. Onabe, lpn. l. Appl. Phys. 37, 4680 (1998).

6 M. Weyers, M. Sato, and H. Ando, lpn. l. Appl. Phys. 31, L853 (1992).
7. X. Liu, S. G. Bishop, J. N. Baillargeon, and K. Y. Cheng, Appl. Phys. Lett. 63,
208 (1993).
8. M. Sato,J. Cryst. Growth 145, 99 (1994).
9. M. Kondow, K. Uorni, K. Hosorni, and T. Mozurne, lpn. l. Appl. Phys. 33, Ll056
(1994).
10. W. G. Bi and C. W. Tu, Appl. Phys. Lett. 69, 3710 (1996).
11. W. G. Bi and C. W. Tu, Appl. Phys. Lett. 70,1608 (1997).
12. S. Francoeur, G. Sivararnan, Y. Qiu, S. Nikishin, and H. Temkin, Appl. Phys. Lett.
72, 1857 (1998).
13. G. Pozina, I. Ivanov, B. Monernar, 1. V. Thordson, and T. G. Andersson, l. Appl.
Phys. 84,3830 (1998).
GaAs has a direct band gap of 1.42 eV, with a subsidiary minimum 0.31 eV higher, at
1.73 eV. GaP has an indirect band gap of 2.26 eV, with a second minimum 0.37 eV
higher, at 2.63 eV. A range of alloys can be made from these two components and the
alloy material changes from a direct to an indirect band structure at a composition of
xc=0.45 (GaP0.45As0.55) [1]. This alloy system has been the subject of many research ef-
forts, due to the technological importance for use in red-emitting device applications
[2].
The refractive index as a function of photon energy for GaPxAs 1•x has been studied by
several authors [3-5]. The measured data suggested that the n value below Eo decreases
with composition x [3,5]. The data in Refs. [3,4] agreed closely between 1.2 and 1.75
eV where comparison is possible (see Ref. [4]). The measured neE) data at T=87 and
300 K were fitted to the first-order Sellmeier equation [3]. This allow us to calculate n
for a given alloy composition x and photon energy E. We show in Table C2-XII-1 the
calculated n values for GaPxAs 1•x with x-composition increments of 0.1.
Clark and Holonyak [3] reported the optical absorption properties of GaPxAs 1.x alloys
in graphical form. They observed the free-carrier absorption and interconduction-band
absorption in GaAs-rich alloys and donor-related absorption in GaP-rich alloys. These
authors also observed the Burstein-Moss shift of the fundamental absorption edge.
TABLE C2·Xll·l Room-temperature refractive indices for GaP,AS}.x as calculated from the
first-order Sellmeier equation (see Ref. [3]). See also Table B12-1 for GaAs (x=O) and Table
B11-3 for GaP (x=1.o).
n
eV x=0.1 x=0.2 x=0.3 x=O.4 x=0.5 x=0.6 x=0.7 x=0.8 x=0.9
0.5 3.280 3.250 3.221 3.193 3.165 3.137 3.108 3.079 3.048
0.6 3.292 3.262 3.232 3.203 3.174 3.146 3.117 3.087 3.056
0.7 3.308 3.275 3.245 3.215 3.186 3.156 3.127 3.097 3.066
0.8 3.326 3.292 3.260 3.229 3.199 3.169 3.139 3.108 3.077
0.9 3.347 3.311 3.277 3.245 3.214 3.183 3.153 3.122 3.090
1 3.372 3.333 3.297 3.264 3.231 3.200 3.169 3.137 3.104
1.1 3.400 3.359 3.320 3.285 3.251 3.219 3.187 3.154 3.121
1.2 3.433 3.388 3.347 3.309 3.274 3.240 3.207 3.173 3.139
1.3 3.470 3.421 3.377 3.337 3.300 3.264 3.229 3.194 3.159
1.4 3.513 3.460 3.412 3.368 3.328 3.291 3.254 3.218 3.181
1.5 3.563 3.504 3.451 3.404 3.361 3.321 3.283 3.245 3.206
1.6 3.554 3.496 3.444 3.398 3.355 3.314 3.274 3.233
1.7 3.547 3.490 3.439 3.392 3.348 3.306 3.263
1.8 3.542 3.486 3.435 3.387 3.341 3.296
1.9 3.539 3.482 3.430 3.381 3.332
2 3.536 3.478 3.424 3.372
2.1 3.532 3.472 3.416
2.2 3.526 3.464
2.3 3.516
342
Disorder effect on the optical absorption of some III-V alloys, including GaPxAs._x,
has been studied theoretically by Ting and Chang [6] with the use of CPA and VCA.
These authors found that the CPA and VCA produce similar absorption spectra for
photon energy above the direct band edge. However, for indirect materials, because of
the scattering due to the disorder potential, clear difference was recognized in these
absorption spectra.
More recently, Kim et al. [7] have reported the dielectric-function spectra of
GaPxAs._x grown on (100)GaAs (.x=O.2 and 0.4) and (OOl)GaP (.x=O.7) by vapor-phase
epitaxy. The measured spectra revealed distinct structures at energies of the Eo, E.,
E.+6., Eo', and E2 CPs.
REFERENCES
by O. Madelung, Landolt-Bomstein, New Series, Group III, Vol. 22, Pt. a
(Springer, Berlin, 1987).
2. C. H. Gooch, Injection Electroluminescent Devices (Wiley, London, 1973).
3. G. D. Clark, Jr. and N. Holonyak, Jr., Phys_ Rev. B 156,913 (1967).
4. H. C. Casey, k, J_ Appl. Phys. 45,2766 (1974).
6. D. Z.-Y. Ting and Y.-c. Chang, Phys. Rev. B 30,3309 (1984).
7. K. J. Kim, M. H. Lee, J. Ho Bahng, K. Shim, and B. D. Choe, J. Appl. Phys. 84,
3696 (1998).
The band gap of InAsxSb 1_x exhibits strong nonlinearity with composition x, and a
minimum of the band gap in this alloy system occurs at x-OA (Eo-OJ eV) [1]. The
InAsxSb 1_x alloy system has, thus, potential applications for optical sources and photo-
detectors operating in the 3-12 ~m wavelength range (see Refs. [2,3]).
The IR reflectivity spectra of InAsxSb 1_x alloy (x=0.20, 0.25, and 0.85) have been
measured in the spectral range of 135-285 cm-1 [4]. Plasma-edge reflectance data ob-
tained by Thomas and Woolley [5] suggest that the £~ value for InAsxSb 1_x can be given
by the linear interpolation between the values of InSb (x=O) and InAs (x=1.0) within
the limits of experimental error.
The complete calculation of the refractive index in III-V Sb-based semiconductors
has been reported by Adachi [6]. His model, however, does not include the effects of
free carriers, and thus the adequate estimation of the refractive index of doped or excit-
ed materials may be impossible. Paskov [7], therefore, considered the free-carrier-
related effects on the refractive-index dispersion. We reproduce in Fig. C2-X-l his ob-
tained results [7]. Because of the extremely large bowing in the Eo gap, the calculated
n(E) spectra show very complex behaviors with alloy composition and photon energy.
It is also seen that the influence of the free carriers on the refractive index increases
with a decrease in the band gap.
Optical absorption at the fundamental absorption edge of InAsxSb 1_x has been meas-
ured by several authors [1,8,9]. The bulk samples used in Ref. [8] were grown by di-
rectional freezing and zone recrystallization methods, whereas the epitaxial InAsxSb 1_
jInAs films were grown by MBE and LPE in Refs. [1] and [9], respectively. Such
samples were used for the determination of the optical energy gaps by standard trans-
mission measurements.
Gong et ai. [2] have grown high-quality InAsxSb1_x/lnAs multilayers by LPE for fab-
ricating photodetectors in the 3-12-~m wavelength range. They have evaluated the
InAsxSb1_x epilayers by Fourier-transform IR transmission and PL measurements, as
well as SE. We reproduce in Fig. C2-XIII-2 their measured SE spectra for InAsxSb 1_x
(x=0.85), together with those for homoepitaxial InAs and InSb [2]. The solid and
dashed lines represent the best-fit MDF calculation.
REFERENCES
1. M. Y. Yen, B. F. Levine, C. G. Bethea, K. K. Choi, and A. Y. Cho, Appl. Phys.
Lett. 50,927 (1987).
2. X. Y. Gong, H. Kan, T. Makino, T. Yamaguchi, T. Nakatsukasa, M. Kumagawa,
N. L. Rowell, A. Wang, R. Rinfret, Cryst. Res. Technol. 30, 603 (1995).
3. J. Diaz, H. Yi, A. Rybaltowski, B. Lane, O. Lukas, D. Wu, S. Kim, M. Erdtmann,
E. Kaas, and M. Razeghi, Appl. Phys. Lett. 70,40 (1997).
4. O. Lucovsky and M. F. Chen, Solid State Commun. 8, 1397 (1970).
5. M. B. Thomas and J. C. Woolley, Can. f. Phys. 49, 2052 (1971).
344
6. S. Adachi,]. Appl. Phys. 61,4869 (1987).

8. 1. C. Woolley and 1. Warner, Can. J. Phys. 42, 1879 (1964).
9. G. B. Stringfellow and P. E. Greene, 1. Electrochem. Soc. 118,805 (1971).
4.20
~ 4.00
!@
1-1
3.80
~
u 3.60
~ 3.40
(0)
~
3.20
0.05 0.15 0.25 0.35 0.45 0.55 0.65
4.20
x=O.35
~ 4.00
~ 3.80
~ 3.60
~
lZl
3.40
(b)
I:t::
3.20
0.05 0.15 0.25 0.35 0.45 0.55 0.65
4.20
~ 4.06 x=O
~ 3.80
~
t> 3.60
x=l
~
!Xl
3.40
(c)
~
3.20
0.05 0.15 0.25 0.35 0.45 0.55 0.65
PHOTON ENERGY (eV)
Figure C2-XIII-l Calculated neE) spectra for InAsxSb 1•x (=0-1.0): (a) intrinsic materials, (b)
p-type materials with p=lxlQl8 cm- 3, and (c) n-type materials with n=lxlOl8 cm-3 • (From
Paskov [7].)
20
(a)
15
10
w 5
0 Q
0
(, ~.
-5 \.,
-10
1.5 2. 5 3.5 4.5 5.5
20
15
10 .~~~)
w 5 0
0
0 q
0
-5 \r.~
-10
1.5 2. 5 3. 5 4. 5 5. 5
25
20 (e)
15 •
~
10
w
5 '----.
0
-5
-10
1. 5 2. 5 3.5 4.5 5. 5
Photon Energy(eV)
Figure C2·XIII·2 SE e(E) spectra for (a) homoepitaxial InAs, (b) InAs.Sb1.JInAs (x=O.85),
and (c) homoepitaxial InSb measured at 300 K. The solid and dashed lines represent the best-fit
MDF calculation. (From Gong et at. [2].)
C3 QUATERNARY ALLOYS
The AlzGal_»yAs I _y quaternary system can be grown lattice-matched to GaAs (see Ta-
ble CI-3). The quaternary system is a promising material for use as the confming layer
in visible light emitting laser diodes because of its large energy gap and good lattice
matching to GaPyAs l_y substrates with their wide range of alloy compositions (y=0-
1.0).
The IR reflectivity spectra of some AlzGal_»yASI_, alloys have been measured by Sen
and Lucovsky [1] in the spectral range of 200-500 cm-I • The reststrahlen parameters
obtained in this study were presented in tabular form, together with those for the end-
member ternary alloys.
Optical absorption spectra at the fundamental absorption edge of AlzGa l_»,Asi-' have
been measured in Ref. [2]. Single-crystalline samples were grown on GaP substrates by
LPE with several pairs of composition (x, y). The majority of the samples exhibited
both indirect (EgX) transitions, which were probably due to the formation of an indirect
excitons and accompanied by the emission of LA phonons, as well as direct (Eo) tran-
sitions. However, no further studies have been performed on this alloy system.
Figures C3-I-l and C3-1-2 show the composition dependence of the band-gap ener-
gies (Eo, EgX, and EgL ) and refractive-index curves with x-composition increments of 0.1
for AlzGal_»yASI_, lattice-matched to GaAs, as calculated from Eqs. (C1.7) and (C1.l4),
respectively. From Fig. C3-I-l, we can expect a direct (r6c)-indirect (X6C, L6 cross-
C
)
over occurring atxc-OA with an energy of Eg,c-1.95 eV.
REFERENCES
1. P. N. Sen and G. Lucovsky, Phys. Rev. B 12,2998 (1975).
2. V. V. Kuznetsov, V. N. Razbegaev, and S. EI-Giziri, Sov. Phys. Semicond. 23,
552 (1989).
347
348 III-V AL LOY SEMICONDUCTORS
3.0
AI xGa l-xPyAs1_Y'GaAs
Figure
band-gaC3-I- 1 Composition d
,PyAs .
ly
fC:~srgieS
at 300 K.
an~P;~d)efince
(Eo, Eg X,
g
of the
or AI,Gal_
0.5 1.0
X
5.0
4.5
Figure
AI G C3-I-2 Refractiv .
. ' al_,PyAsl-/GaAs w' e mdices for
mcrements of 0.1 at 3001~. x-composition
-tlw ( eV
The AlxGal_xAsySbl_y quaternary system can be grown lattice-matched to GaSb, InP, and
InAs (see Table CI-3). The alloy system is an important material system covering the
wavelengths between the visible and IR region (0.57-1.72 11m) suitable for device ap-
plications, such as injection lasers, photodiodes, and solar cells. The alloy system is
also interesting for use in cladding (or barrier) layers of the Ga)n'_xAsySb,_y /AlxGa1_
xAsySb,_y lasers [1,2].
The IR reflectivity spectra of some AlxGal_xAsySbl_y alloys lattice-matched to GaSb
have been measured by Mezerreg et al. [3] in the spectral range of 75-400 cm- I . The
reststrahlen parameters obtained in this study were presented in tabular form.
Theoretical predictions of the refractive-index dispersion in the transparent region of
AlxGa,_..AsySb,_y have been reported on the bases of data concerning the binary parents,
AlAs, AISb, GaAs, and GaSb [4,5]. Experimentally, Alibert et al. [6] determined the
refractive-index dispersion in AlxGal_xAsySbl)GaSb alloy (x=0-0.51) grown by LPE.
The neE) data in this study were obtained based on an accurate measurement of the
reflection of p-polarized light as a function of the incident angle and by fitting the re-
flectance data to a calculated one. The accuracy of this measurement was estimated to
be within ±o.005. The measured data were fitted to the single effective-oscillator model.
Note that their obtained neE) data in the limit E-70 eV (i.e., £~ values) show very
strong nonlinearity with respect to alloy composition x [6].
The experimental values of neE) for AlxGal_xAsySbl_/InP (.x=0.l) have been deter-
mined by measuring reflectance of a thin MBE-grown film of known thickness and by
fitting the minima and maxima [7].
Optical absorption coefficients in LPE-grown AlxGal_..AsySbl_y on GaAs substrates
with (x,y)=(O,O.9) and (0.06,0.9) have been determined at different temperatures be-
tween 20 and 300 K [8]. Note that this alloy system is not lattice-matched one.
Figure C3-II-l shows the composition dependence of the band-gap energies (Eo, EgX,
and E gL) for (a) AlxGal_xAsySbl)GaSb, (b) AlxGal_xAsySbl_/InP, and (c) AlxGal_..ASySbl_
/InAs, as calculated from Eq. (Cl.7). The refractive-index curves with x-composition
increments of 0.1 for (a) AlxGal_xAsySbl-/GaSb, (b) AlxGa'_xAsySb,_y/lnP, and (c)
AlxGal_xAsySbl_jInAs, as calculated from Eq. (C1.14), are also shown in Fig. C3-II-2
[4]. The experimental data taken from Ref. [7] are shown in Fig. C3-U-2 (b) by the
solid circles. We can see in Fig. C3-II-l that these alloy systems show a direct (r6c) -
indirect (~C. L6 crossover occurring at xc-OA-O.5.
C
)
REFERENCES
1. S. J. Eglash and C. K. Choi,Appl. Phys. Lett. 57,1292 (1990).
2. D. Z. Garbuzov, R. U. Martinelli, H. Lee, R. J. Menna, P. K. York, L. A. DiMarco,
M. G. Harvey, R. J. Matarese, S. Y. Narayan, and J. C. Connolly, Appl. Phys. Lett.
70,2931 (1997).
3. A. Mezerreg, C. Llinares, J. L. Lazzari, and A. Montaner, Thin Solid Films 221,
196 (1992).
349
4. S. Adachi,f. Appl. Phys. 61,4869 (1987).

5. H. Abid, M. Rezki, and H. Aourag, Mat. Sci. Eng. B 41, 314 (1996).
6. C. Alibert, M. Skouri, A. Joullie, M. Benouna, and S. Sadiq, f. Appl. Phys. 69,
3208 (1991).
7. O. Blum, I. J. Fritz, L. R. Dawson, and T. J. Drummond, Electron. Lett. 31, 1247
(1995).
8. P. Swarup, R. K. Jain, S. N. Verma, Sh. Charan, and D. M. Tandle, Phys. Status
Solidi A 65, K183 (1981).
3D~-------------. 3D~-------------.
>u
""2.0
(a) (b)
o~~~~~~~~ o~~~~~~~~
o 0.5 1.0 o 0.5 1.0
X x
3.0.---------------..,
AIxGal-x Asy Sb l -y ImAs
>u
"" 2.0
(c)
x
Figure C3·n·l Composition dependence of the band-gap energies (Eo, E/, and EgL ) for (a)
Al.Ga1 ...As,Sb1-/GaSb, (b) Al.Ga1 .•As,Sb1.jlnP, and (c) Al.Ga1 ...As,Sb1.jlnAs at 300 K. [(a),
(c): From Adachi [4].]
C3 QUATERNARY ALLOYS 351
6~~------------------~ 5.5r-----------.
AlxGal_~sySbl_Y'GaSb
5.5 to 5.0
1.0
5.0 4.5
c: 4.0
3.5
3.5 3.0 InP

(a) (b)
3.0 2.5~L..LLL..LL~.L.L.L.I..L.L~:!_U_.l..L.L.L.U..J
0 3.0 o 3.0
llcu eV eV )
5.5
10
5.0
4.5
c: 4.0
3.5
(c)
3.0
2.5
0 3.0
11w
Figure C3-ll-2 Refractive indices for (a) Al.Gal ..AsySbl-/GaSb, (b) Al.Gal..AsySbl.jInP, and
(c) Al.Gal .•AsySb1.jInAs with x-composition increments of 0.1 at 300 K. The experimental data
taken from Ref. [7] (x=0.1) are shown in (b) by the solid circles. [(a), (c): From Adachi [4].]
The AlzGa,.J'ySb,.y quaternary system can be grown lattice-matched to GaAs, GaSb,
InP, and InAs (see Table CI-3). However, a very few studies have been performed on
this alloy system so far.
Shimomura et al. [1] have reported the refractive indices for the end-point ternaries
GaPySb,./InP (.x=0) and AlPySb,./InP (.x=1.0) at 1.55 !-lm measured by ellipsometry
and those for GaPySb,./InP determined using a reflectance spectroscopy technique. The
ellipsometry n values were 3.579 and 3.037 for GaPySb,./InP and AlPySb,./InP, re-
spectively. The n(E) curves obtained from reflectance spectroscopy were found to
agree well with the calculated ones based on the simplified interband-transition model
[2].
Figure C3-III-1 shows the composition dependence of the band-gap energies (Eo, EgX,
and EgL ) for (a) AlzGa,.J'ySb,.jGaAs, (b) AlzGa,.J'ySb,.jGaSb, (c) AlxGa1.J'ySb,./InP,
and (d) AlxGa,.J'ySb,./InAs, as calculated from Eq. (C1.7). The refractive-index curves
with x-composition increments of 0.1 for (a) AlxGa1.J'ySb1.)GaAs, (b) AlxGa,.J'ySb1.
)GaSb, (c) AlxGa,.J'ySb1./InP, and (d) AlxGa1.J'ySb,./InAs, as calculated from Eq.
(C1.14), are also shown in Fig. C3-III-2. The experimental data taken from Ref. [1] are
shown in Fig. C3-III-2 (c) by the solid circles.
REFERENCES
1. H. Shimomura, T. Anan, and S. Sugou,J. eryst. Growth 162,121 (1996).
352
3.0 AlxGol_xPySbl_/GoSb
>
Q)
~
c.. c..
~ ~
0
Z
~ to
AlxGol_xPySbl_/GaAs
(b)
0 0
0 0.5 to 0 0.5 to
X X
AlxGo l -x Py Sb l -y IlnP AI xGal -x Py Sb l -y/lnAs

3.0 3.0
(c) (d)
O~~L-L-L-L-~~~~ O~~~~~~~~~~
o 0.5 1.0 o 0.5 1.0
X X
Figure C3·III·1 Composition dependence of the band-gap energies (Eo, E/,

and EgL ) for (a)
AlxGal.xPySbl./GaAs, (b) AlxGal_xPySbl./GaSb, (c) AlxGal_xPySbl_JInP, and (d) AlxGal_xPySbl_
JInAs at 300 K.
5P,---------------------~
6.0.------------.
4.5
4.0
3.5
3.0
(a)
2.5~.L.U.J...J..LI.L.U.J...U.JLJ..L.!:J..L.1.Ju..u.~u..u..L.U..L.U 3~~UL~~~~LULU~LU
o 234 o 20 3.0
nw (eV) eV )
5.5,---------------------, ~5r-------------------~
1.0
5.0 5.0
0.5
4.5 0.5
c: 4.0
3.5
(d)
3.0 3.0
(c)
2.5L-L-L~.........c...L.L::.........~.........c.L.L-L.J...L'W'-'O'......,.. 2.50.LLL..LJ....I..J..J....L...LLJ..U...L.J..I..J..J....LJ...LJ..U...L.J..I~
o 2.0 3.0 1.0 2.0 3.0
( eV ) -I1w ( eV )
Figure C3-ll1-2 Refractive indices for (a) AlxGal.xPySbl./GaAs, (b) AlxGal.xPySbl./GaSb, (c)
AlxGal.xPySbl.jInP, and (d) AlxGal.xPySbl./inAs with x-composition increments of 0.1 at 300 K.
The experimental data taken from Ref. [1] are shown in (c) by the solid circles.
The Ga)n1_»yAs 1_y quaternary system can be grown lattice-matched to GaAs and InP
(see Table CI-3). The quaternary system is used to produce lasers operating in the
wavelength range between 1.3 and 1.6 Ilm. Lasers emitting at this spectral range are of
great technological interest because of their application in an optical fiber communica-
tion system. The Ga)nl_»yAs1_y laser structures are grown lattice-matched to InP sub-
strates. The GaoA7II1o.s3As(y=O)/lnP heterostructure system has also broader interest
since it is used for various optoelectronic and transport device applications. A review
of many important physical and semiconducting properties of the Ga)nl_»yAsl.y alloy
system has been given in Refs. [1,2].
The static (EJ and high-frequency dielectric constants (E_) for Ga)n1.»yAs 1_y alloy at
300 K can be given by [2]
E,(y)=13.94-1.44y (C3.1)
E_(y)= 11.61-1.95y (C3.2)
The IR reflectivity spectra of Ga)n1_J\As1./lnP have been measured by several

authors [3-5]. The samples used were grown by LPE [3,4] or MOVPE [5]. Figure C3-
IV-l shows the results obtained by Amiotti et al. [5]. The optical constants in the rest-
strahlen region can, in principle, be obtained by analysis of the IR reflectivity data with
Figure C3-IV-l Room-temperature re-

flectance of GaJn_.p,ASI-jInP with )'=0
(top), 0.06, 0.09, 0.15, 0.22, 0.38, 0.48,
0.59, and 0.71 (bottom). Each spectrum is
0.5 offset of 0.5 vertically with respect to the
previous one to facilitate viewing. (From
Amiotti et al. [5].)
Wavenumber (em- 1)
355
a KK inversion or fit to an oscillator model. We, however, find no detailed optical-

constant data for Ga)nt_J>yAs t_y quaternary in the reststrahlen region. This is because
the reflectivity studies on this alloy system were concentrated mainly on the phonon
mode behavior [6].
In the energy region below the fundamental absorption edge, where materials are
nearly transparent, the refractive-index measurements were carried out for Ga)n t_
J>yAst_jInP by many methods. Chandra et al. [7] have presented the n data with y be-
tween 0 and 0.724 for wavelengths from 2.5 11m to about 0.1 11m below their respective
absorption edges [see Fig. 5.22, InxGat_xAsyPt_jInP (0.276:'>y::S].0)]. Interference fringes
were the basis of the measurements. Broberg and Lindgren [8] have measured the n
values using a Brewster-angle method. The y compositions studied were in the range
0.258-1.0. The n dispersion in the near-band-edge region of Ga)nt_J>yAst_jInP quater-
nary has also been determined by Kowalsky et al. [9,lD] from transmission and reflec-
tion measurements. A new method of detecting optical waveguide modes was devel-
oped by Henry et al. [11], who applied it to Ga)nt_J>yAst_jInP. A diffraction grating
has also been used to measure the n dispersion in Ga)nt_J>yAst_jInP at the wavelength
for stimulated emission [12]. It is possible to determine the refractive index of a guid-
ing layer by measuring the cutoff wavelengths of the supported modes in a waveguide.
This method has been applied to Ga)nt_J>yAsI_jInP waveguide [13]. The n values de-
termined using this method were accurate to the third decimal plane. The effective n
values for Ga)nl_J>yASt_y lattice-matched to GaAs have also been reported by Kawan-
ishi et al. [14].
Accurate experimental n values for optional composition of Ga).nt_..p#l-y alloy are
not yet available. This necessitates the use of some sort of calculation. Different ap-
proaches have been made to calculate n dispersion in this alloy system. We have al-
ready given in Fig. 5.24 the calculated results based on the simplified interband-
transition model (InxGat_xAsyPt_jInP). Table C3-IV-l lists the numeric n values ob-
tained from this calculation (r=o eV) [15].
Near-band-edge absorption of Ga)nt_"pyAst_jInP has been measured by many inves-
tigators (see, e.g., Ref. [16]). The spectra depicted the sharp decline of a, common to
the direct-band-gap semiconductors. Since the experimental information seemed to be
limited to narrow composition and wavelength, Fiedler and Schlachetzki [17] have cal-
culated the absorption coefficients of Ga)nt_J>yAs t_y quaternary using the extrapolation
scheme. Similar study, but focused mainly on the free-carrier-induced absorption, has
been performed by Reid et at. [18].
The optical constants of GaxInt_J>yAst_jInP have been studied using SE by several
authors [19-22]. Kelso et al. [20] have reported the room-temperature optical constants
for Ga)nt_J>yAst_/InP alloy of target compositions y=0-1.0 in steps of 0.2 at energies
between 1.5 and 6.0 e V measured by SE. The samples were grown by LPE. Carrier
concentrations were in the (lOt6_lO t7)_cm-3 range, which is sufficiently low that visi-
ble-near-UV optical spectra are unaffected by the impurities. Figures C3-IV-2 and C3-
IV-3 reproduce their obtained E(E)=Et(E)+iEz{E) and n*(E)=n(E)+ik(E) spectra, re-
spectively [20]. Kim et al. [22] have measured the dielectric functions of strained
TABLE C3-IV -1 Room-temperature refractive indices for Ga)nJ_.pyAsJ..JlnP as calculated

from the simplified interband-transition model_
n
eV x=O x=0.1 x==0.2 x==O.3 x==O.4 x==O.5 x==0.6 x==0.7 x==0.8 x==0.9 x==1.0
0.5 3.442 3.392 3.334 3.323 3.307 3.287 3.262 3.233 3.201 3.165 3.127
0.55 3.450 3.400 3.343 3.331 3.314 3.293 3.268 3.239 3.206 3.170 3.132
0.6 3.460 3.410 3.352 3.340 3.323 3.301 3.275 3.245 3.212 3.175 3.137
0.65 3.473 3.422 3.363 3.350 3.332 3.310 3.283 3.253 3.219 3.182 3.144
0.7 3.492 3.437 3.377 3.362 3.343 3.320 3.292 3.261 3.227 3.189 3.151
0.75 3.546 3.459 3.394 3.377 3.356 3.331 3.302 3.270 3.235 3.196 3.159
0.8 3.418 3.395 3.371 3.344 3.314 3.281 3.244 3.205 3.168
0.85 3.481 3.420 3.390 3.360 3.327 3.292 3.255 3.214 3.178
0.9 3.475 3.415 3.379 3.343 3.306 3.267 3.225 3.190
~ 3~3~3~3~3~3~3~
1 3.446 3.386 3.340 3.295 3.250 3.219
1.05 3.423 3.363 3.313 3.265 3.236
1.1 3.396 3.336 3.282 3.258
1.15 3.365 3.303 3.283
1.2 3.418 3.330 3.315
1.25 3.370 3.357
1.3 3.420
1~ 3~1O
Ga)n1YyASI_Y (y==O, 0.2, 0.6, 0.8, and 1.0) and unstrained Ga)n1Y#l-Y grown on InP
substrates by MOCVD. SE has also been used by Amiotti and Landgren [23] to deter-
mine thickness and n values at 1..=1.3, 1.55, and 1.7 Ilm of Ga)n1YyAs1_y films grown
on InP substrates.
The data of Kelso et al. [20] are very worthy for understanding fundamental optical
properties of GaxInl-xPyAsI_Y' However, these data seem to have one disadvantage with
(a)
(b)
.- (1-y)=
-QOO(Inp) 10
----- 0.24 (1-y)=
o ----.-.. -- 0.42
- - - 055 -O.OO(Jnp)
----- 0.B2 --- 0.24
--1.oo(InGOAS) --------042
---0.55
---0.82
--1.00 (InGOAS)
0L-~~-~3~~~4--~-5~~~
E(eV) E(eV)
Figure C3-IV-2 Real (El) and imaginary parts (E0 of the pseudodielectric function for Ga.In_
.PyAsl_/lnP with y==O-1.0 measured at room temperature. (From Kelso et al. [20].)
(a)
3
c 3 (l-y)=
- 0.00 (Inp)
---- 0.24
·········0.42 ---- 0.24
- ' - 0.55 ·········0.42
2 _._. 0.82
- - 1.00CInGQAS)
- - - 0.55
·_·_·0.82
- - 1.00([nGoAs)
4 5 6 5 6
E (eV) E (eV)
Figure C3-IV-3 Real (n) and imaginary parts (k) of the complex refractive index for GaxIn.
xPyAs1.jInP with y=D-1.0 measured at room temperature. (From Kelso et al. [20].)
respect to their usefulness: they are not expressed as continuous analytic functions of
photon energy E and alloy composition y. Various theoretical models have, therefore,
been proposed recently which enable calculation of the optical constants in the inter-
band transition region of semiconductors [24,25].
The refractive indices of Gao.47In0.53As lattice-matched to InP have been measured by
Asai and Iwamura [26] in the wavelength range between 1.0 and 2.0 /lm using reflec-
tance spectroscopy technique. The n dispersion showed a clear peak at Ag-1.2 /lm (see
Fig. C3-XI-l and Table C3-XI-l, below). Optical absorption spectra near the funda-
mental absorption edge of Gao.47Illo.S3As/InP have also been measured by a number of
authors [27-32]. These spectra showed the n=l discrete-exciton peak at low tempera-
tures, as shown in Fig. C3-IV-4 [29]. The optical constants in the interband transition
region of Gao.47In0.53As/InP have been determined by Dinges et al. [33] using SE at 300
K. The 450°C data of nand k for Gao.4)nO.53 As/InP have been reported by Celii et al.
[34]. The chemical treatment effect of Gao.47Ino.53As/InP has also been studied using SE
by Aspnes and Stocker (35]. The optical constants, n*=n+ik and £=£I+iEz, in the visi-
ble-IR region of Gao.47InO.53As/InP have also been determined from the KK inversion
analysis of the reflectance data by Nee and Green [36]; the data show better resolved
peaks associated with the El and El+~1 transitions than those obtained from SE.
Tables C3-IV-2a-C3-IV-2e list the room-temperature values of £=£I+iEz, n*=n+ik, a,
and R for Gaxln1-xPyAs1.y!InP for 1.5~::;6.0 eV obtained from SE by Kelso et al. [20].
The optical-constant data for E::;1.24 eV (y=0, Gao.47In0.53As/InP) are also listed in Ta-
ble C3-IV-2a. They are taken from Dinges et al. [33].
Figure C3-IV-5 shows the composition dependence of the band-gap energies (Eo, E/,
and E gL) for (a) Ga)nl.xPyAsl.JGaAs and (b) Gaxlnl'XPyAsl.y!InP, as calculated from Eq.
(C1.7). The refractive-index curves with y-composition increments of 0.1 for Ga)n l.
xPyAs1./GaAs, as calculated from Eq. (C1.14), are shown in Fig. C3-IV-6.
GalnAsllnP
8000
......
'I
E 6000
.....u
tS 4000
2000
a
Q725 0.750 0.775 Q800 0.825 0.850
energy [eV]
Figure C3-IV-4 AbsOlption spectra of Gllo.47Ino.s3As/lnP (n=8xlQI4 cm-3) at various tempera-
tures. The vertical arrows mark the band-gap energies given by the onset of the absorption. The
scale of the absorption values on the left is valid for all spectra which have been shifted verti-
cally for clarity. (From Zielinski et al. [29].)
>2.0
......CII t---=----:~
(a) (b)
O~L-L-L-L-L-L-L-L-~
0.5 to o 0.5 1.0
Y Y
Figure C3-IV-5 Composition dependence of the band-gap energies (Eo. EgX, and E gL ) for (a)
Ga.InI-xPyAs1_/GaAs and (b) Ga.Inl-xPyAsl_,llnP at 300 K.
to
Figure C3·IV-6 Refractive indices
for Ga.Inl..P,As1./GaAs with y-
composition increments of 0.1 at
300K.
0.5 1.0 1.5 2.0

fico ( eV )
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Table C3·IV·2a Optical constants ojGa.[nl .• PyAs1•y with y=O (GaoA7Ino.53As) at 300 K.
eV £1 Ez n k cx(cm·l ) R
0.652 10.69 3.27 0.283
0.689 12.32 3.51 0.310
0.729 12.81 0.36 3.58 0.05 3.70E+03 0.317
0.775 12.88 0.50 3.59 0.07 5.50E+03 0.319
0.826 12.95 0.58 3.600 0.08 6.70E+03 0.320
0.885 13.04 1.23 3.615 0.17 1.53E+04 0.322
0.953 13.07 1.38 3.620 0.19 1.84E+04 0.323
1.033 13.16 1.60 3.635 0.22 2.30E+04 0.325
1.215 13.25 1.90 3.650 0.26 3.20E+04 0.327
1.24 13.32 2.05 3.660 0.28 3.52E+04 0.328
1.5 13.61 2.70 3.71 0.36 5.54E+04 0.335
1.6 13.93 2.82 3.75 0.38 6.lOE+04 0.339
1.7 14.36 3.07 3.81 0.40 6.94E+04 0.346
1.8 14.79 3.19 3.87 0.41 7.53E+04 0.352
1.9 15.32 3.47 3.94 0.44 8.49E+04 0.359
2 15.89 3.87 4.02 0.48 9.77E+04 0.368
2.1 16.54 4.48 4.10 0.55 1.16E+05 0.377
2.2 17.36 5.18 4.21 0.61 1.37E+05 0.388
2.3 18.25 6.13 4.33 0.71 1.65E+05 0.401
2.4 18.93 7.88 4.44 0.89 2. 16E+o5 0.416
2.5 18.57 10.89 4.48 1.22 3.08E+05 0.431
2.6 15.71 14.33 4.30 1.67 4.39E+05 0.443
2.7 13.21 15.09 4.08 1.85 5.06E+05 0.442
2.8 11.07 15.64 3.89 2.01 5.71E+05 0.443
2.9 9.46 15.58 3.72 2.09 6. 16E+05 0.442
3 8.07 14.42 3.51 2.06 6.25E+05 0.429
3.1 7.43 13.50 3.38 2.00 6.28E+05 0.417
3.2 7.07 12.88 3.30 1.95 6.33E+05 0.408
3.3 6.86 12.42 3.24 1.91 6.40E+05 0.401
3.4 6.89 12.15 3.23 1.88 6.48E+05 0.397
3.5 6.79 11.96 3.20 1.87 6.62E+05 0.394
3.6 6.79 11.96 3.20 1.87 6.81E+05 0.394
3.7 6.79 11.99 3.21 1.87 7.01E+05 0.395
3.8 6.79 12.33 3.23 1.91 7.35E+05 0.400
3.9 7.00 12.79 3.28 1.95 7.70E+05 0.407
4 6.96 13.44 3.32 2.02 8.20E+05 0.416
4.1 6.96 14.69 3.41 2.16 8.96E+05 0.434
4.2 6.43 16.13 3.45 2.34 9.96E+05 0.454
4.3 5.36 17.48 3.44 2.54 1. llE+06 0.474
4.4 3.39 19.08 3.37 2.83 1.26E+06 0.503
4.5 0.71 19.29 3.16 3.05 1.39E+06 0.525
4.6 -2.86 18.56 2.82 3.29 1.53E+06 0.556
4.7 -5.36 16.72 2.47 3.39 1.6IE+06 0.580
4.8 -6.64 13.80 2.08 3.31 1.61E+06 0.593
4.9 -6.79 11.66 1.83 3.18 1.58E+06 0.596
5 -6.43 9.91 1.64 3.02 1.53E+06 0.592
5.1 -6.00 8.59 1.50 2.87 1.48E+<)6 0.586
5.2 -5.46 7.73 1.41 2.73 1.44E+06 0.575
5.3 -5.00 6.93 1.33 2.60 1.40E+06 0.564
Table C3-IV-2a Continued (Ga)nl_.PyAs1_y, y=O).

eV £1 £2 n k a (em-I) R
5.4 -4.64 6.53 1.30 2.52 1.38E+06 0.553
5.5 -4.29 6.13 1.26 2.43 1.35E+06 0.542
5.6 -3.86 5.83 1.25 2.33 1.32E+06 0.523
5.7 -3.57 5.61 1.24 2.26 1.31E+06 0.510
5.8 -3.29 5.46 1.24 2.20 1.29E+06 0.497
5.9 -3.18 5.25 1.22 2.16 1.29E+06 0.491
6 -3.04 5.18 1.22 2.13 1.29E+06 0.484
Table C3-IV-2b Optical constants of Ga)nl_.PyAs1_y with y=0.18 at 300 K.

eV £1 ~ n k a (em-I) R
1.5 13.21 2.36 3.65 0.32 4.92E+04 0.328
1.6 13.54 2.45 3.69 0.33 5.38E+04 0.332
1.7 13.79 2.55 3.73 0.34 5.89E+04 0.337
1.8 14.14 2.79 3.78 0.37 6.74E+04 0.342
1.9 14.64 3.07 3.85 0.40 7.69E+04 0.350
2 15.11 3.37 3.91 0.43 8.74E+04 0.356
2.1 15.71 3.83 3.99 0.48 1.02E+05 0.365
2.2 16.36 4.45 4.08 0.55 1.22E+05 0.375
2.3 17.11 5.25 4.18 0.63 1.46E+05 0.386
2.4 17.86 6.60 4.30 0.77 1.87E+05 0.400
2.5 18.57 8.90 4.43 1.01 2.55E+05 0.419
2.6 17.86 12.12 4.44 1.36 3.60E+05 0.435
2.7 15.36 14.26 4.26 1.67 4.58E+05 0.441
2.8 13.21 15.06 4.08 1.85 5.24E+05 0.442
2.9 11.07 15.46 3.88 1.99 5.86E+05 0.441
3 9.11 15.18 3.66 2.07 6.31E+05 0.437
3.1 8.07 14.11 3.49 2.02 6.36E+05 0.424
3.2 7.50 13.28 3.37 1.97 6.39E+05 0.413
3.3 7.21 12.82 3.31 1.94 6.48E+05 0.407
3.4 6.89 12.30 3.24 1.90 6.54E+05 0,400
3.5 6.79 12.06 3.21 1.88 6.66E+05 0.396
3.6 6.79 11.99 3.21 1.87 6.82E+05 0.395
3.7 6.79 11.99 3.21 1.87 7.01E+05 0.395
3.8 6.79 12.33 3.23 1.91 7.35E+05 0.400
3.9 7.00 12.67 3.28 1.93 7.64E+05 0.405
4 7.00 13.31 3.32 2.00 8.13E+05 0.414
4.1 7.07 14.17 3.38 2.09 8.70E+05 0.426
4.2 6.79 15.52 3.44 2.25 9.59E+05 0.445
4.3 6.07 17.06 3.48 2.45 1.07E+06 0.466
4.4 4.64 18.71 3.46 2.71 1.21E+06 0.492
4.5 2.14 19.36 3.29 2.94 1.34E+06 0.513
4.6 -1.07 19.02 3.00 3.17 1.48E+06 0.539
4.7 -3.93 17.64 2.66 3.32 1.58E+06 0.564
4.8 -6.07 15.49 2.30 3.37 1.64E+06 0.586
4.9 -6.61 13.04 2.00 3.26 1.62E+06 0.592
5 -6.71 10.74 1.73 3.11 1.58E+06 0.596
5.1 -6.43 9.36 1.57 2.98 1.54E+06 0.594
5.2 -6.00 8.37 1.47 2.85 1.51E+06 0.587
Table C3-IV -2b Continued (GaJnl .• P,As1., • y=0.18).

eV £\ £2 n k a (cm'\) R
5.3 -5.43 7.67 1.41 2.72 1.46E+06 0.573
5.4 -4.96 7.06 1.35 2.61 1.43E+06 0.562
5.5 -4.46 6.75 1.35 2.51 1.40E+06 0.543
5.6 -4.07 6.26 1.30 2.40 1.36E+06 0.529
5.7 -3.75 5.95 1.28 2.32 1.34E+06 0.516
5.8 -3.46 5.74 1.27 2.25 1.33E+06 0.503
5.9 -3.21 5.52 1.26 2.19 1.3IE+06 0.491
6 -3.14 5.46 1.26 2.17 1.32E+06 0.487
Table C3-IV -2c Optical constants of GaJnl .• P,As1., with y=0.45 at 300 K.
eV £\ £2 n k a (cm'\) R
1.5 12.82 2.09 3.59 0.29 4.42E+04 0.321
1.6 12.89 2.18 3.60 0.30 4.91E+04 0.322
1.7 13.18 2.36 3.64 0.32 5.58E+04 0.327
1.8 13.43 2.45 3.68 0.33 6.08E+04 0.331
1.9 13.75 2.76 3.73 0.37 7. 13E+04 0.337
2 14.29 2.94 3.80 0.39 7.84E+04 0.345
2.1 14.75 3.25 3.86 0.42 8.96E+04 0.351
2.2 15.29 3.68 3.94 0.47 1.04E+05 0.360
2.3 15.96 4.23 4.03 0.52 1.22E+05 0.370
2.4 16.79 5.06 4.14 0.61 1.49E+05 0.382
2.5 17.50 6.23 4.25 0.73 1.86E+05 0.395
2.6 18.07 7.98 4.35 0.92 2.42E+05 0.410
2.7 17.86 11.04 4.41 1.25 3.43E+05 0.428
2.8 16.07 13.80 4.32 1.60 4.54E+05 0.440
2.9 13.57 15.00 4.11 1.82 5.36E+05 0.441
3 10.93 15.00 3.84 1.95 5.94E+05 0.436
3.1 9.11 14.42 3.62 1.99 6.27E+05 0.428
3.2 7.93 13.56 3.44 1.97 6.40E+05 0.417
3.3 7.36 12.82 3.33 1.93 6.45&05 0.407
3.4 7.14 12.33 3.27 1.89 6.50E+05 0.400
3.5 6.96 12.02 3.23 1.86 6.6IE+05 0.395
3.6 6.96 11.96 3.22 1.85 6.77E+05 0.393
3.7 6.96 11.99 3.23 1.86 6.97E+05 0.395
3.8 7.11 12.15 3.25 1.87 7. 19E+05 0.397
3.9 7.14 12.36 3.27 1.89 7.47E+05 0.400
4 7.21 12.85 3.31 1.94 7.87E+05 0.407
4.1 7.21 13.62 3.36 2.02 8.42E+05 0.418
4.2 7.14 14.72 3.43 2.15 9. 14E+05 0.434
4.3 6.61 16.20 3.47 2.33 1.02E+06 0.454
4.4 5.54 17.79 3.48 2.56 1.l4E+06 0.477
4.5 3.57 19.63 3.43 2.86 1.3IE+06 0.507
4.6 0.36 19.42 3.15 3.09 1.44E+06 0.529
4.7 -2.86 18.10 2.78 3.25 1.55E+06 0.553
4.8 -5.00 15.64 2.39 3.27 1.59E+06 0.569
4.9 -6.39 13.19 2.03 3.24 1.61E+06 0.587
5 -6.79 11.20 1.78 3.15 1.60E+06 0.597
5.1 -6.36 9.91 1.65 3.01 1.56E+06 0.590
Table C3-IV -2e Continued (Ga)n,_xPyAs,_y ,y=0.45).

eV £1 £2 n k a (em-I) R
5.2 -5.61 8.59 1.52 2.82 1.49E+06 0.575
5.3 -5.07 7.67 1.44 2.67 l.44E+06 0.560
5.4 -4.68 7.06 1.38 2.56 1.40E+06 0.548
5.5 -4.32 6.75 1.36 2.48 1.39E+06 0.536
5.6 -3.93 6.41 1.34 2.39 1.36E+06 0.521
5.7 -3.68 6.17 1.32 2.33 1.35E+06 0.512
5.8 -3.36 5.89 1.31 2.25 1.32E+06 0.496
5.9 -3.11 5.77 1.31 2.20 1.32E+06 0.485
6 -2.86 5.58 1.31 2.14 1.30E+06 0.472
Table C3-IV-2d Optical constants ofGa)n,_xPyAs,_y withy=058 at 300 K.

eV £1 £2 n k a (em-I) R
1.5 12.57 1.75 3.55 0.25 3.74E+04 0.316
1.6 12.61 1.87 3.56 0.26 4.26E+04 0.317
1.7 12.79 1.99 3.59 0.28 4.78E+04 0.321
1.8 12.89 2.15 3.60 0.30 5.45E+04 0.322
1.9 13.25 2.39 3.65 0.33 6.30E+04 0.328
2 13.68 2.55 3.71 0.34 6.96E+04 0.335
2.1 14.18 2.82 3.78 0.37 7.93E+04 0.342
2.2 14.64 3.16 3.85 0.41 9.16E+04 0.350
2.3 15.18 3.74 3.93 0.48 l.l1E+05 0.359
2.4 15.82 4.48 4.02 0.56 1.36E+05 0.370
2.5 16.54 5.31 4.12 0.64 1.63E+05 0.381
2.6 17.29 6.81 4.24 0.80 2. 12E+05 0.396
2.7 17.86 8.96 4.35 1.03 2.82E+05 0.414
2.8 17.50 11.81 4.39 1.34 3.82E+05 0.431
2.9 15.00 14.42 4.23 1.70 5.01E+05 0.441
3 12.50 15.09 4.01 1.88 5.73E+05 0.440
3.1 9.82 14.79 3.71 1.99 6.26E+05 0.432
3.2 7.96 14.11 3.48 2.03 6.59E+05 0.425
3.3 7.36 13.19 3.35 1.97 6.58E+05 0.412
3.4 7.14 12.58 3.29 1.91 6.60E+05 0.403
3.5 6.96 12.06 3.23 1.87 6.62E+05 0.396
3.6 6.96 11.69 3.21 1.82 6.65E+05 0.390
3.7 6.96 11.60 3.20 1.81 6.80E+05 0.388
3.8 7.11 11.66 3.22 1.81 6.97E+05 0.389
3.9 7.14 11.84 3.24 1.83 7.23E+05 0.392
4 7.21 12.18 3.27 1.86 7.56E+05 0.397
4.1 7.43 12.76 3.33 1.92 7.96E+05 0.406
4.2 7.50 13.65 3.40 2.01 8.56E+05 0.419
4.3 7.21 14.88 3.45 2.16 9.41E+05 0.436
4.4 6.50 16.69 3.49 2.39 1.07E+06 0.460
4.5 5.00 18.87 3.50 2.69 1.23E+06 0.491
4.6 2.14 20.00 3.34 3.00 1.40E+06 0.520
4.7 -1.79 19.02 2.94 3.23 1.54E+06 0.547
4.8 -5.00 16.96 2.52 3.37 1.64E+06 0.576
4.9 -6.39 14.11 2.13 3.31 1.64E+06 0.589
5 -6.79 11.66 1.83 3.18 1.61E+06 0.596
Table C3-IV-2d Continued (Ga)nl.,PyAs 1.y , y=058).

eV 1:1 1:2 n k a (em·1) R
5.1 -6.36 9.91 1.65 3.01 1.56E+06 0.590
5.2 -5.61 8.90 1.57 2.84 1.50E+06 0.572
5.3 -5.07 7.98 1.48 2.69 1.45E+06 0.558
5.4 -4.68 7.36 1.42 2.59 1.42E+06 0.548
5.5 -4.32 6.84 1.37 2.49 1.39E+06 0.536
5.6 -3.93 6.44 1.34 2.40 1.36E+06 0.523
5.7 -3.68 6.20 1.33 2.33 1.35E+06 0.510
5.8 -3.36 5.92 1.31 2.25 1.33E+06 0.496
5.9 -3.11 5.80 1.32 2.20 1.32E+06 0.483
6 -2.86 5.58 1.31 2.14 1.30E+06 0.472
Table C3-IV-2e Optical constants o!Ga)nl.,PyAs1. y with y=0.76 at 300 K.

eV 1:1 1:2 n k a (em' 1) R
1.5 12.36 1.35 3.52 0.19 2.92E+04 0.312
1.6 12.46 1.47 3.54 0.21 3.37E+04 0.314
1.7 12.50 1.56 3.54 0.22 3.80E+04 0.315
1.8 12.82 1.81 3.59 0.25 4.60E+04 0.320
1.9 12.96 1.90 3.61 0.26 5.07E+04 0.323
2 13.32 2.15 3.66 0.29 5.95E+04 0.328
2.1 13.64 2.45 3.71 0.33 7.03E+04 0.334
2.2 14.04 2.76 3.76 0.37 8.18E+04 0.340
2.3 14.57 3.07 3.84 0.40 9.33E+04 0.349
2.4 15m 3.68 3.91 0.47 1.15E+05 0.357
2.5 15.71 4.39 4.00 0.55 1.39E+05 0.368
2.6 16.43 5.52 4.11 0.67 I.77E+05 0.381
2.7 17.11 7.06 4.22 0.84 2.29E+05 0.396
2.8 17.57 8.90 4.32 1.03 2.93E+05 0.412
2.9 17.11 12.42 4.37 1.42 4. 18E+05 0.433
3 14.64 15.28 4.23 1.81 5.49E+05 0.448
3.1 11.07 15.77 3.89 2.02 6.36E+05 0.444
3.2 8.64 15.18 3.61 2.10 6.82E+05 0.437
3.3 7.57 13.80 3.41 2.02 6.76E+05 0.420
3.4 6.79 12.67 3.25 1.95 6.71E+05 0.405
3.5 6.43 11.93 3.16 1.89 6.70E+05 0.395
3.6 6.32 11.41 3.11 1.83 6.69E+05 0.385
3.7 6.39 11.35 3.12 1.82 6.83E+05 0.385
3.8 6.43 11.29 3.12 1.81 6.98E+05 0.384
3.9 6.50 11.32 3.13 1.81 7.16E+05 0.384
4 6.79 11.50 3.17 1.81 7.35E+05 0.386
4.1 6.96 11.75 3.21 1.83 7.61E+05 0.391
4.2 7.18 12.45 3.28 1.90 8.08E+05 0.402
4.3 7.46 13.50 3.38 2.00 8.70E+05 0,417
4.4 7.32 15.34 3.49 2.20 9.8IE+05 0.442
4.5 6.50 17.85 3.57 2.50 1.14E+06 0.474
4.6 3.57 20.18 3.47 2.91 1.36E+06 0.512
4.7 -1.43 19.79 3.03 3.26 1.55E+06 0.549
4.8 -3.93 18.10 2.70 3.35 1.63E+06 0.566
4.9 -5.89 15.67 2.33 3.36 1.67E+06 0.584
Table C3-IV-2e Continued (GaJn/ .• P,As/.,. y=O.76).
eV £1 q n k a (em'!) R
5 -6.79 13.19 2.01 3.29 1.67E+06 0.5%
5.1 -6.68 10.89 1.75 3.12 1.61E+06 0.595
5.2 -6.00 8.59 1.50 2.87 1.51E+06 0.586
5.3 -5.18 7.67 1.43 2.69 1.44E+06 0.565
5.4 -4.75 7.12 1.38 2.58 1.41E+06 0.552
5.5 -4.29 6.75 1.36 2.48 1.38E+06 0.536
5.6 -3.93 6.38 1.33 2.39 1.36E+06 0.522
5.7 -3.57 5.83 1.28 2.28 1.32E+06 0.508
5.8 -3.21 5.61 1.28 2.20 1.29E+06 0.490
5.9 -3.04 5.37 1.25 2.15 1.28E+06 0.484
6 -2.89 5.21 1.24 2.10 1.28E+06 0.474
The Ga)nl.xAsySbl.y quaternary system can be grown lattice-matched to GaSb, InP, and
InAs (see Table CI-3). High-performance diode lasers emitting in the 2-5-J.l.m wave-
length region are of considerable interest for sensitive detection of gases because many
atmospheric molecules have strong absorption lines in this wavelength region. The
Ga)nl.xAsySbl.y quaternary system offers interesting possibilities, because it can
provide the basis for devices operating over this entire spectral region (see Ref. [1]).
However, there have been reported no detailed experimental data on the optical con-
stants of this alloy system.
The IR reflectivity spectra of some Ga)nl.xAsySbl.y alloys lattice-matched to GaSb
have been measured by Pickering [2] and Mezerreg et al. [3]. The reststrahlen
parameters obtained in this study were presented in tabular form [3]. Studies on Ga)nl.
xAsySbl.y lattice-matched to InAs have also been carried out by Pickering [2].
Bi et al. [4] have studied the IR optical absorption properties of MBE-grown Ga)nl.
xAsySbl.y alloys deposited on GaSb and GaAs substrates. They have also obtained the
refractive-index curves in the 600-3200-cm·l range for the alloys of (x, y)=(0.734,
0.109) and (0.753, 0.093). These n(E) curves agreed well with the theoretical model of
Adachi [5]. Using theoretical fitting to measured transverse far-field patters in Ga)nl.
xAsySbl./AlxGal.xAsySbl.jGaSb double-heterostructure laser emitting at 2.2 J.l.m, Loural
et al. [6] estimated the active-layer refractive index as 3.78. We can see that this value
exactly agrees with the calculated one based on the simplified interband-transition
model [see Fig. C3-V-2 (a)].
Figure C3-V-l shows the composition dependence of the band-gap energies (Eo, EgX,
and EgL) for (a) Ga)nl.xAsySbl.jGaSb, (b) Ga)nl.xAsySbl.jlnP, and (c) Ga)nl.xAsySbl'
jlnAs, as calculated from Eq. (C1.7) [7]. The refractive-index curves with x-
composition increments of 0.1 for (a) Ga)nl.xAsySbl.jGaSb, (b) GaXlnl.xAsySbl.jlnP,
and (c) GllxInl.xAsySbl.jlnAs, as calculated from Eq. (C1.14), are also shown in Fig.
C3-V-2 [7].
In Fig. C3-V-2, the higher-energy endpoint at each curve corresponds to the value of
n at the lowest direct gap Eo. A noticeable feature found in Fig. C3-V-2 is that these
alloy systems show a refractive-index anomaly, i.e., the smaller Eo-gap material has a
smaller value of the refractive index. Note that most of the III-V alloys, such as
AlxGa1.xAs and Gaxlnl.~yAsl'y, show no such refractive-index anomaly.
REFERENCES
1. C. A. Wang and H. K. Choi, Appl. Phys. Lett. 70, 802 (1997).
2. C. Pickering, J. Electron. Mater. 15,51 (1986).
3. A. Mezerreg, C. Llinares, 1. L. Lazzari, and A. Montaner, Thin Solid Films 221,
196 (1992).
4. W.G. Bi, A. Z. Li, and S. S. Tan, Mat. Res. Soc. Symp. Proc. 216,213 (1991).
5. S. Adachi, J. Appl. Phys. 53, 5863 (1982).
368
6. M. S. S. Loural, M. B. Z. Morosini, J. L. Herrera-Perez, A. A. G. Von Zuben, A.

C. F. da Silveir, and N. B. Patel, Electron. Lett. 29,1240 (1993).
7. S. Adachi, f. Appl. Phys. 61,4869 (1987).
2.0 20
Gaxlnl_xAsySbl_/GaSb Gaxlnl_xAsySb1_/lnp
>CIl 1.5 ~ 1.5
0.
0.
~ 1.0 ~ 1.0
0
0
z z Eo
;a «
IXl
0.5 0.5
(a) (b)
0
0.5 1.0 0 0.5 to
X X
2.0
~ t5
o
~
IXl 0.5
(c)
O~~~-J~~~-L~~.
o 0.5 1.0
X
Figure C3-V -1 Composition dependence of the band-gap energies (Eo, EgX, and EgL ) for (a)
Ga.oInl.xAsySbl-/GaSb, (b) Ga.oInl.xAsySbl_JInP, and (c) Ga.oInl_xAsySbl_JInAs at 300 K. [(a), (c):
From Adachi [7].]
(a)
0.5 1.0
-f,(U ( eV )
4.0
3.8
3.6
InP
C
3.4
3.2
(b)
3.0
0 0.5 1.0 1.5
-1\00 eV )
4.1
3.9
x·a
(c)
0.5 1.0
i\w ( eV )
Figure C3-V-2 Refractive indices for (a) Ga,In\_.AsySb\.!GaSb, (b) Ga,In\ .•AsySb\./illP, and
(c) Ga,In\..AsySb\./illAs with x-composition increments of 0.1 at 300 K. [(a), (c): From Adachi
[7].]
The Gaxlnl_J\Sb l_y quaternary alloy has the room-temperature band gap ranging from
0.18 eV (InSb) to 2.26 eV (GaP). The quaternary alloy can be grown lattice-matched to
GaAs, GaSb, InP, and InAs (see Table Cl-3). However, a large miscibility gap exists
due to the large difference of lattice constants of the end-point binary components. This
has prevented the growth of this alloy system until recently.
Optical properties of the MOCVD-grown Ga)nl_~ySbl_y layers on GaAs, InP, InAs,
GaSb, and InSb substrates were reported by Jaw et al. [1]. Transmission and PL exci-
tation spectroscopy were used to determine the fundamental absorption edges of such
quaternary layers. No further studies have been performed on this alloy system.
Figure C3-VI -1 shows the composition dependence of the band-gap energies (Eo, Egx,
and E gL) for (a) Ga)nl_~ySbl-JGaAs, (b) Ga)nl_~ySbl-JGaSb, (c) Ga)nl_~ySbl_JInP,
and (d) Ga)nl_~ySbl_JInAs, as calculated from Eq. (C1.7). The refractive-index curves
with x-composition increments of 0.1 for (a) Ga)nl_~ySbl-JGaAs, (b) Ga)nl_~ySbl_
/GaSb, (c) Gaxlnl_~ySbl_JInP, and (d) Ga)nl_~ySbl_JInAs, as calculated from Eq.
(C1.14), are also shown in Fig. C3-VI-2. Like Ga)nl_~sySbl_y, the Ga)nl_~ySbl-JGaSb
system shows a refractive-index anomaly, i.e., the smaller Eo-gap material has a smaller
value of the refractive index [see Fig. C3-VI-2 (b)].
REFERENCES
1. D. H. Jaw, M. J. Jou, Z. M. Fang, and G. B. Stringfellow, J. Appl. Phys. 68,3538
(1990).
371
-
>2.0 ;-2.0
QI QI
(a)
1.0
X
a.. a..
~ ~
0
~ 1.0
Eo
Gax1n1_xPySb1_/lnP
(C) (d)
0 0
0 0.5 to 0 0.5 1.0
X X
Figure C3-VI-l Composition dependence of the band-gap energies (Eo, EgX, and E gL ) for (a)
GaJnl..PySbdGaAs, (b) Ga..Inl ..PySbl-/GaSb, (c) Ga..Inl ...PySb1_,llnP, and (d) Ga.In1..PySb1_
,llnAs at 300 K.
4.0..---------------, 4.1.------------~
3.9
c C 3.7
3.5
3.2
(a) (b)
3.0~-'-'-W-L..u..J1..LJ...LJ..l..LJ...w..J.-'-'-L-L..L..LJ...Ju..J
o 1.0 2.0 3.0 0.5 1.0
-1\00 ( eV ) -1100 ( eV )
4.0·.-------------. 4 . 1 . - - - - - - - - -_ _~
3.9
3.5
c C 3.7
3.0
3.5
(c) (d)
2~~~~0~.5~~1.LO~~1.w5~~20 3.3o!:-",--..I..--'--~....l.os--'---''--I-.-.!..-..l
. 1.0
i\w ( eV )
-1100 (eV)
Figure C3-VI-2 Refractive indices for (a) Ga)n1.xPySb1./GaAs, (b) Ga)n1.xPySb1./GaSb, (c)
GaxInl.xPySbl./InP, and (d) Gaxlnl.xPySbl./lnAs with x-composition increments of 0.1 at 300 K.
The Al)nl ..pyAsl.y quaternary system can be grown lattice-matched to GaAs and InP
(see Table Cl-3). As we will see [Fig. C3-VII-1 (a)], the material system Al)nl.J'yAs I .
/GaAs falls into the indirect-band-gap (E/) region over the entire range of alloy com-
position. The Al)nl ..pyAsl./lnP system, on the other hand, falls into the direct-band-
gap (Eo) region for 0:5y:::;I.0 [see Fig. C3-VII-1 (b)]. However, the quaternary system
AI)n1.'pyAsl.JInP has band gaps not at an interesting emission wavelength. Further,
AI)nl.'pyAsloy is expected to have a miscibility gap. Since then, less attention has been
paid on this quaternary system. No detailed data on the optical properties of this alloy
system is also available at present.
Figure C3-VII -1 shows the composition dependence of the band-gap energies (Eo,
E/, and E gL ) for (a) Al)n1.)'yAs1./GaAs and (b) Al)n1.)'yAs1oJInP, as calculated from
Eq. (C1.?). The refractive-index curves with y-composition increments of 0.1 for (a)
AI)n1o)'yAs1./GaAs and (b) Al)n1.)'yAs1.JInP, as calculated from Eq. (C1.14), are also
shown in Fig. C3-VII-2.
3.0r.:::::----------, 3.0
Alxln]_xPyAs]_y'lnP
>
Q)
>
Q)
EX
EX 9
2.0 9 ....... 2.0
EL
9
c..
<X:
(!)
c Eo
~ 1.0
a:l
AIx In] -xPAs]
y -y IGaAs
(a) (b)
0
0.5 1.0 0 0.5 1.0
Y Y
Figure C3-VII-l Composition dependence of the band-gap energies (Eo, EgX, and EgL ) for (a)
Al.!nloxPyAsl-!GaAs and (b) AlxInloxPyAslojInP at 300 K.
374
4.5 4.0
Alxlnl_xPyAsl_/GaAs Alxlnl_xPyAsl_/lnP
y=o
y=0.1
3.8
4.0 0.5" 0.4"
3.6
C 3.5
~ c
3.4
3.0
3.2
(a)
(b)
2.5 3.0
0 3.0 0 0.5 1.0 1.5 2.0
-nw eV ) iiw ( eV )
Figure C3·VII·2 Refractive indices for (a) Al.In1 .•PyAs1./GaAs and (b) Al.In1 .•PyAs1.JInP with
y-composition increments of 0.1 at 300 K.
The Al)nl_xAsySbl_y quaternary system can be grown lattice-matched to GaSb, lnP, and
lnAs (see Table C1-3). Although several quantum-well structures have been demon-
strated based on this alloy system (see Ref. [1]), no experimental data on the optical
constants of this alloy system is available at present.
Figure C3-VIII-1 shows the composition dependence of the band-gap energies (Eo,
E/, and EgL ) for (a) Al,In1_xAsySb1-!GaSb, (b) Al)n1_xAsySb1-/lnP, and (c) Al,Inl_
xAsySb1-/lnAs, as calculated from Eq. (C1.7). The refractive-index curves with x-
composition increments of 0.1 for (a) Al)n1_xAsySb1-/GaSb, (b) Al)n1_xAsySb1_jInP,
and (c) Al,In1_xAsySb1_jInAs, as calculated from Eq. (C1.14), are also shown in Fig. C3-
VIII-2.
REFERENCES
1. A. D. Andreev and G. G. Zegrya, Appl. Phys. Lett. 70,601 (1997).
376
~Or-----------------, 3D~-----------------,
-~
....... 2.0
a.
~
a
z
~ 1.0
Alxlnl_xAsySbl_/lnP
(a) (b)
OL-L-~~~-J-J-J-J-J 0
o 0.5 1.0 0 0.5 1.0
X X
3Dr-----------------~
AI In1 As Sb1 IlnAs

x -x Y -y
~
--2.0
(c)
OL-~~~~~~~~~
o 0.5 1.0
X
Figure C3-VIII-l Composition dependence of the band-gap energies (Eo, EgX, and E gL ) for (a)
Alxln1.xAsySb1-/GaSb, (b) AlxInl.xAsySbl.jInP, and (c) AlxInl.xAsySbl.jInAs at 300 K.
5P.---------------------~
AIx 1n1 -xAsySb l -yIlnP 1.0
5.5 x.tO
4.5 0.8
5.0
4.0
c: c:
3.5
3.0
3.0
(a) (b)
2.5 1,-J-l..LLLLJ..LLLLJ..LLJ..L.JU-L.1-L.L..L..J...LLL.L..U
0
1.0 2.0 3.0
ftw eV
6.0~-----------.,
5.5
1.0
5.0
c:
3.0
(c)
2.5,Lw..LL-U..JU-L.J..J...L..L..J...LLLLJ..LJ...L.J..J...w...u...L.J
o 1.0 2.0 3.0
ftw ( eV )
Figure C3-VIII-2 Refractive indices for (a) Al)nl_xAsySb1./GaSb, (b) Al.Inl_xAsySbl_JInP, and
(c) AlxInl_xAsySbl_JInAs with x-composition increments of 0.1 at 300 K.
The Al)n1_J>ySb 1_yquaternary system can be grown lattice-matched to GaAs, GaSb, InP,
and InAs (see Table Cl-3). However, no detailed data on the optical properties of this
alloy system is available at present.
Figure C3-IX-l shows the composition dependence of the band-gap energies (Eo, EgX,
and EgL ) for (a) Al)n1_J>ySb1-!GaAs, (b) Al)n1_J>ySb1-!GaSb, (c) Al)n1_J>ySb1-!InP, and
(d) Al)nl_J>ySb1_JInAs, as calculated from Eq. (C1.7). The refractive-index curves with
x-composition increments of 0.1 for (a) Al)n1_J>ySb1-!GaAs, (b) Al)n1_J>ySb1-!GaSb,
(c) Alxln1-.J\Sb1_JInP, and (d) Al)n1_J>ySb1-/lnAs, as calculated from Eq. (C1.14), are
also shown in Fig. C3-IX-2.
3.0
20
(a)
1.0
x
(c)
x X
Figure C3·IX·l Composition dependence of the band-gap energies (Eo, EgX, and EgL) for (a)
Al.In1_xPySb1-!GaAs, (b) AlxInl_xPySbl-!GaSb, (c) AlxInl_xPySbl_JInP, and (d) AlxInl_xPySbl_JInAs
at 300 K.
379
5.0 6.0
A1x''1_xPySbl-ylGoAs Al x 'nl_x PySb 1•y lGaSb

5.5
to
1.0
4.5
5.0
0.8
4.0
4.5
C
3.5
GoAs~
3.0
3.0
(a) (b)
2.5 2.5
0 2 3 4 0 1.0 2.0 3.0
1100 eV ) 1100 ( eV )
6.0 5.5
1.0
Alx '''1_x PySb 1_yl1nP
5.5
5.0
1.0
5.0
4.5
c
4.0
3.5
3.0 3.0 Alx'nl-xPySb 1_yllnAs
(c) (d)
2.5 2.5
0 1.0 2.0 3.0 0 1.0 2P 3.0
i\w ( eV ) 1\(1) eV
Figure C3-IX-2 Refractive indices for (a) Al.In1 .• PySb1./GaAs, (b) Al.In1 .•PySb1./GaSb, (c)
Al.In1 .•PySb1.jInP, and (d) Al.In1 .• PySb1.jInAs with x-composition increments of 0.1 at 300 K.
The AlxGayln._x_l quaternary system can be grown lattice-matched to GaAs [(AlxGa._
x)osIllosP/GaAs, see Table Cl-4]. The quaternary system offers the widest direct energy
gaps in the III-V alloys apart from the N-based compounds. Therefore, this alloy sys-
tem is an exceptionally promising material system for fabricating solar cells and light-
emitting and laser diodes in the visible wavelength region below 700 nm. Excellent
laser diodes with very low threshold current and high output power have been reported
so far (see, e.g., Refs. [1,2]).
Under certain conditions, the end-member GRo.slfio.sp ternary alloy grown by
MOVPE exhibits spontaneous CuPt-type ordering, with alternating Ga- and In-rich
planes along the {Ill} crystallographic direction [3]. Of interest is the band-gap low-
ering that it causes, and the importance of this alloy for making various optoelectronic
devices [4,5].
The high-frequency dielectric constant, E_, for (AlxGa._JoslnosP lattice-matched to
GaAs has been reported to be given by [6]
E_(X) =939 - 0.85x (C3.3)
This value was obtained, as a byproduct, by fitting the refractive-index dispersion data
with the first-order Sellmeier equation:
B"K
n(/,i=A+-- (C3.4)
"K-C
where A. is the wavelength in the vacuum (in 11m).
The n dispersion in the transparent region of (AlxGa._.)uslnosP/GaAs has been meas-
ured by several authors [6-8]. The samples used in these studies were grown by
MOVPE [6,7] and by gas-source MBE [8]. Measurement techniques were SE [6], opti-
cal transmission [7], and reflectance spectroscopy [8]. Figure C3-X-l shows, as an ex-
ample, the n dispersion for GRosIllosP (x=0) obtained at energies below and a little abo-
ve the Eo edge by SE (solid circles) [6]. The open circles also represent the refractive
indices obtained by Moser et at. [7]. We can recognize in the figure a considerable de-
viation between these two experimental data (&1-0.04 at 1.2 eV). Notice, however,
that this deviation is within the experimental error of the transmission experiments
(-0.2, Ref. [7]).
From the fit with the first-order Sellmeier equation [Eq. (C3.4)], Adachi et at. [6]
determined a set of the dispersion parameters A, B, and C for (AlxGa •.Jo.s1nosP/GaAs
quaternary that can be written as
A(x) = 5.38 + 2.l6x (C3.5a)
B(x) = 4.01- 3.0 Ix (C3.5b)
C(x) = 0.184 - 0.019x +0.024x2 (C35c)
381
4.0
Gao.5Ino.5P
3.8
3.6
.'
c
3.4
o •
3.2
3.0 0
0.4 0.8 1.2 1.6 2.0
Photon Energy (eV)
Figure C3-X-l Refractive indices for Gao.sIno.sp grown on (lOO)GaAs measured by SE at room
temperature (solid circles). The open circles show the experimental data obtained by Moser et
at. [7] from transmission measurements. The solid line represents the calculated result of Eq.
(C3.4). (From Adachi et at. [6]).
As A.~oo in Eq. (C3.4), one obtains that n(A.~oo)2=E_=A+B. The resultant E_ value for
(AlxGat_x)o.sIno.sP/GaAs quaternary is given by Eq. (C3.3).
The optical constants in the interband transition region of (AlxGat_x)o.sIno.sP/GaAs
have been measured using SE by several authors [9-11]. Ozaki et at. [10] have report-
ed the E(E) and its related optical spectra for (AlxGat-.,)o.sIno.sP quaternary of target
compositions x=0-1.0 in steps of 0.25 at energies between 1 and 6 eV at 300 K. The
samples used were epitaxially grown on (lOO)GaAs by MOCVD. Figures C3-X-2 and
C3-X-3 show, respectively, the E(E)=E1(E)+iEiE) and n*(E)=n(E)+ik(E) spectra ob-
tained by Ozaki et at. [10]. The solid lines in Fig. C3-X-2 represent the theoretical fits
of the MDF calculation. The CP parameters obtained in this analysis were listed in
tabular form [10].
As seen in Fig. C3-X-2, the two major features of the spectra are the EI and E2
structures at -3.2-3.7 eV and -4.8 eV, respectively. The EI structure moves to higher
energy with increasing x, while the E2 structure does not perceptibly do so. The E1+/':,.1
structure is not clearly discernible in this alloy system. This is because the EI and E1+/':,.1
structures overlay with each other and the oscillator strength of E 1+/':,.1 is much smaller
than that of E 1• Lee et at. [11] also measured the SE E(E) spectra of (AlxGa l _
x)o.sIno.sP/GaAs quaternary; however, their study was concentrated mainly on the de-
termination of the SCP parameters by an SCP analysis.
The refractive indices and absorption coefficients in the region below and a little
above the Eo edge of Gaa.s1no.sP have been determined from the reflectance interference
E,
40 40 I (b)
30 x=1.00
(+20) 30
x=0.75
(+15)
20 x=0.50
'"
w
(+10)
x=0.25 20 x=0.50
(+5) (+10)
10 x=o
x=O.25
(+5)
x=o
0
3 4 5 6
Photon energy (eV) Photon energy (eV)
Figure C3-X-2 't(E) spectra for (AlxGal-X)O.SIno.sP/GaAs measured by SE at room temperature

(solid circles). The open circles represent the experimental data taken from Ref. [6]. The solid
lines represent the theoretical fits of the MDF calculation. (From Ozaki et al. [10].)
(a)
4 4 x=O
x=0.25
x=0.50
x=0.75
3 3 x=1.00
2 x=o 2
x=0.25
x=0.50
x=0.75
x=1.00
(b)
o 2 3 4 5 6 o 2 3 4 5 6
Figure C3-X-3 Complex refractive indices, n'(E)=n(E)+ik(E), for (AlxGa1_x)o.sIno.sP/GaAs at
room temperature. They are calculated from the teE) data in Fig. C3-X-2.
spacing (n) and conventional transmission measurements (ex) by Garbuzov et at. [12].
The n and ex values in the A.=400-800-nm region of Gao.sIno.sp have also been deter-
mined using Brillouin scattering and SE techniques by Hassine et at. [13]. Their ob-
tained results are reproduced in Fig. C3-X-4.
The effects of spontaneous ordering in Gao.slno.sP were studied using SE [10]. They
were investigated by growth on (lOO)GaAs substrates tilted at angles of 2°, 7°, and 15°
with respect to the nearest <110> direction. The tilted-angle dependence of €(E) was
3.7
562.8
3.6
x 4.2 3.5
w
0 Ag~ 752.
z 4.0 3.4
w 560 620 6BO 740
> 3.B
i=
0
« 3.6
a:
LL
w 3.4 (a)
a: Ag
3.2
400 500 600 700 BOO
WAVELENGTH (nm)
",350
E
u
'b
,.... 300 (b)
2S
z 250
o
~ 200
a:
55 150
co
«
...J
100
«()
1= 50
0....
o 0 \
4~0~0--~45~0~-=50~0~-=55~0~~60~0~~6~50~~700
WAVELENGTH (nm)
Figure C3-X-4 (a) Refractive indices and (b) absorption coefficients for GlIo.sIno.sP grown on
(lOO)GaAs measured by Brillouin scattering (vertical bars) and SE (open triangles) at room
temperature. (From Hassine et at. [13]).
observed not only for GlIo.sIno.sP but also for (AlxGa\.x)o.sIno.sP (x;t(). It is hard to expect
such a spontaneous ordering in the quaternary alloys because it may be somewhat in-
hibited by the presence of Al. We, therefore, consider that the observed tilted-angle
dependence may result mainly from the difference in the degree of surface roughness.
The n data shown in Fig. C3-X-1 are for the 2°-tilted sample. The SE study of
Gao.sIno.sP alloy has also been carried out by a number of groups [14-17].
Tables C3-X-1a-C3-X-1e list the room-temperature values of £=£l+i~, n*=n+ik, Ct.,
and R for (AlxGal_Jo.sIno.sP/GaAs with x between 0 (Gao.sIno.sP) and 1.0 (Alo.sIno.sP) in
steps of 0.25 forO.5~S;5.65 eV determined by SE [6,10].
Figure C3-X-5 shows the composition dependence of the band-gap energies (Eo, EgX,
and EgL ) for (AlxGal-x)o.sIno.sP/GaAs, as calculated from Eq. (C1.8). The refractive-
index dispersion with x-composition increments of 0.1 for (AlxGal.x)o.sIno.sP/GaAs, as
calculated from Eq. (C3.4), is also shown in Fig. C3-X-6.
3.0.-------------,
Figure C3-X-S Composition dependence of the

band-gap energies (Eo, EgX, and EgL) for (AI-
xGal .•)o.slno.sP/GaAs.
o~~~~~~~~~~
o 0.5 1;0
X
3.6
(AlxGa1-x)O.5Ino.5P
3.5
3.4
3.3
c
3.2 x=O
3.1 x=O.5
3.0
x=1.0
2.9 1.0 1.5 2.0 2.5

Photon Energy (eV)
Figure C3-X-6 Refractive indices for (AI.Gal.;c)o.sIno.sP/GaAs with x-composition increments of
0.1 at 300 K. (From Adachi et al. [6]).
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(1994).
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Thin Solid Films 270, 97 (1995).
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Table C3-X-la Optical constants of (AI.GaJ_.Jo.slno.sP with x=O at 300 K.
0.5 9.514 3.084 0.260

0.55 9.541 3.089 0.261
0.6 9.571 3.094 0.262
0.65 9.604 3.099 0.262
0.7 9.640 3.105 0.263
0.75 9.679 3.111 0.264
0.8 9.723 3.118 0.265
0.85 9.770 3.126 0.265
0.9 9.820 3.134 0.266
Table C3-X-la Continued [(AlxGalox)o.5ino.5P, x=Oj.
eV 10 1 102 n k a (em-I) R
0.95 9.876 3.143 0.267
1 9.935 3.152 0.269
1.05 9.999 3.162 0.270
1.1 10.07 3.173 0.271
1.15 10.14 3.185 0.273
1.2 10.22 3.198 0.274
1.25 10.31 3.211 0.276
1.3 10.41 3.226 0.277
1.35 10.51 3.242 0.279
1.4 10.62 3.259 0.281
1.45 10.74 3.277 0.283
1.5 10.87 3.297 0.286
1.55 11.01 3.318 0.288
1.6 11.17 3.342 0.291
1.65 11.35 3.369 0.294
1.7 11.55 3.399 0.297
1.75 11.76 3.429 0.301
1.8 11.96 3.459 0.304
1.85 12.25 0.824 3.502 0.118 2.21E+04 0.309
1.9 12.49 1.718 3.542 0.242 4.67E+04 0.315
1.95 12.52 1.696 3.546 0.239 4.73E+04 0.316
2 12.53 1.685 3.548 0.237 4.81E+04 0.316
2.05 12.57 1.859 3.556 0.261 5.43E+04 0.317
2.1 12.63 2.020 3.566 0.283 6.03E+04 0.318
2.15 12.73 2.149 3.581 0.300 6.54E+04 0.320
2.2 12.87 2.278 3.602 0.316 7.05E+04 0.323
2.25 13.03 2.414 3.626 0.333 7.59E+04 0.326
2.3 13.20 2.568 3.650 0.352 8.20E+04 0.329
2.35 13.36 2.805 3.675 0.382 9.09E+04 0.332
2.4 13.52 3.064 3.701 0.414 1.01E+05 0.335
2.45 13.68 3.264 3.725 0.438 1.09E+05 0.338
2.5 13.85 3.466 3.750 0.462 1.17E+05 0.341
2.55 14.09 3.700 3.785 0.489 1.26E+05 0.346
2.6 14.36 3.962 3.825 0.518 1.37E+05 0.350
2.65 14.63 4.268 3.865 0.552 1.48E+05 0.355
2.7 14.90 4.617 3.906 0.591 1.62E+05 0.360
2.75 15.20 5.015 3.950 0.635 I.77E+05 0.366
2.8 15.52 5.465 3.999 0.683 1.94E+05 0.372
2.85 15.85 5.993 4.050 0.740 2. 14E+05 0.378
2.9 16.19 6.620 4.103 0.807 2.37E+05 0.385
2.95 16.52 7.387 4.161 0.888 2.65E+05 0.393
3 16.86 8.309 4.223 0.984 2.99E+05 0.402
3.05 17.19 9.384 4.288 1.094 3.38E+05 0.412
3.1 17.51 10.643 4.359 1.221 3.84E+05 0.423
3.15 17.53 12.184 4.409 1.382 4.41E+05 0.434
3.2 16.75 13.790 4.385 1.573 5.IOE+05 0.443
3.25 14.92 15.191 4.255 1.785 5.88E+05 0.447
3.3 12.94 16.077 4.097 1.962 6.56E+05 0.451
3.35 11.40 16.173 3.949 2.048 6.95E+05 0.449
3.4 10.09 15.818 3.798 2.082 7.18E+05 0.445
Table C3-X-la Continued [(AI.Gal .• )oslnosP, x=Ol.

eV 10 1 102 n k ex (em· l ) R
3.45 9.093 15.336 3.669 2.090 7.3IE+05 0.439
3.5 8.508 14.866 3.580 2.076 7.37E+05 0.434
3.55 8.223 14.430 3.524 2.048 7.37E+05 0.428
3.6 7.965 14.026 3.471 2.020 7.37E+05 0.423
3.65 7.721 13.706 3.424 2.001 7.41E+05 0.419
3.7 7.488 13.470 3.384 1.990 7.47E+05 0.416
3.75 7.293 13.285 3.350 1.983 7.54E+05 0.414
3.8 7.178 13.146 3.328 1.975 7.6IE+05 0.412
3.85 7.153 13.050 3.319 1.966 7.67E+05 0.410
3.9 7.132 12.991 3.313 1.961 7.75E+05 0.410
3.95 7.074 12.973 3.305 1.962 7.86E+05 0.409
4 7.025 13.004 3.302 1.969 7.99E+05 0.410
4.05 6.999 13.093 3.305 1.981 8. 13E+05 0.411
4.1 6.973 13.239 3.312 1.999 8.31E+05 0.413
4.15 6.943 13.435 3.322 2.022 8.51E+05 0.416
4.2 6.911 13.682 3.335 2.052 8.74E+05 0.420
4.25 6.875 13.982 3.351 2.086 8.99E+05 0.424
4.3 6.825 14.367 3.371 2.131 9.29E+05 0.430
4.35 6.622 14.839 3.382 2.194 9.68E+05 0.437
4.4 6.288 15.388 3.385 2.273 1.0IE+06 0.445
4.45 5.927 15.987 3.390 2.358 1.06E+06 0.454
4.5 5.460 16.597 3.386 2.451 1.12E+06 0.463
4.55 4.775 17.228 3.365 2.560 1.18E+06 0.474
4.6 3.868 17.864 3.328 2.684 1.25E+06 0.487
4.65 2.846 18.367 3.274 2.805 1.32E+06 0.499
4.7 1.656 18.705 3.196 2.926 1.39E+06 0.511
4.75 0.290 18.817 3.091 3.044 1.47E+06 0.524
4.8 -1.087 18.588 2.961 3.139 1.53E+06 0.536
4.85 -2.402 18.102 2.816 3.214 1.58E+06 0.548
4.9 -3.661 17.320 2.650 3.268 1.62E+06 0.558
4.95 -4.698 16.336 2.480 3.294 1.65E+06 0.568
5 -5.414 15.350 2.331 3.293 1.67E+06 0.575
5.05 -5.896 14.364 2.194 3.273 1.68E+06 0.580
5.1 -6.198 13.377 2.067 3.236 1.67E+06 0.584
5.15 -6.414 12.390 1.941 3.191 1.67E+06 0.588
5.2 -6.441 11.402 1.824 3.125 1.65E+06 0.589
5.25 -6.256 10.523 1.730 3.041 1.62E+06 0.586
5.3 -6.066 9.955 1.672 2.977 1.60E+06 0.582
5.35 -5.922 9.629 1.640 2.935 1.59E+06 0.579
5.4 -5.758 9.313 1.611 2.890 1.58E+06 0.575
5.45 -5.519 8.956 1.581 2.832 1.56E+06 0.569
5.5 -5.238 8.608 1.555 2.767 1.54E+06 0.561
5.55 -4.948 8.361 1.544 2.708 1.52E+06 0.553
5.6 -4.642 8.221 1.549 2.654 1.51E+06 0.542
Table C3-X-lh Optical constants o/(AI.Gal .• )oslnosP with x=0.25 at 300 K.

eV 101 102 n k ex (em' I) R
0.5 9.276 3.046 0.256
Table C3-X-lb Continued [(AI.Ga} .• )o5/no5P, x=O.25j.
eV £1 £2 n k a (em-I) R
0.55 9.298 3.049 0.256
0.6 9.321 3.053 0.257
0.65 9.348 3.057 0.257
0.7 9.377 3.062 0.258
0.75 9.408 3.067 0.258
0.8 9.443 3.073 0.259
0.85 9.480 3.079 0.260
0.9 9.520 3.086 0.261
0.95 9.564 3.093 0.261
1 9.611 3.100 0.262
1.05 9.663 3.108 0.263
1.1 9.718 3.117 0.264
1.15 9.777 3.127 0.266
1.2 9.841 3.137 0.267
1.25 9.910 3.148 0.268
1.3 9.985 3.160 0.270
1.35 10.07 3.173 0.271
1.4 10.15 3.186 0.273
1.45 10.25 3.201 0.275
1.5 10.35 3.217 0.276
1.55 10.46 3.234 0.278
1.6 10.58 3.253 0.281
1.65 10.71 3.273 0.283
1.7 10.85 3.294 0.285
1.75 11.01 3.318 0.288
1.8 11.18 3.344 0.291
1.85 11.37 3.372 0.294
1.9 11.58 3.403 0.298
1.95 11.81 0.287 3.437 0.042 8.25E+03 0.302
2 12.07 0.834 3.476 0.120 2.43E+04 0.307
2.05 12.32 1.559 3.517 0.222 4.61E+04 0.312
2.1 12.51 1.684 3.545 0.238 5.06E+04 0.315
2.15 12.65 1.806 3.566 0.253 5.52E+04 0.318
2.2 12.76 1.925 3.582 0.269 5.99E+04 0.320
2.25 12.86 2.042 3.597 0.284 6.48E+04 0.322
2.3 12.97 2.159 3.614 0.299 6.97E+04 0.324
2.35 13.12 2.276 3.636 0.313 7.46E+04 0.326
2.4 13.31 2.393 3.662 0.327 7.95E+04 0.329
2.45 13.47 2.573 3.686 0.349 8.67E+04 0.332
2.5 13.63 2.756 3.711 0.371 9.41E+04 0.335
2.55 13.87 2.945 3.745 0.393 1.02E+05 0.339
2.6 14.13 3.137 3.782 0.415 1.09E+05 0.343
2.65 14.32 3.353 3.809 0.440 1.1 8 E+05 0.347
2.7 14.52 3.603 3.839 0.469 1.28E+05 0.350
2.75 14.80 3.901 3.879 0.503 1.40E+05 0.355
2.8 15.10 4.247 3.923 0.541 1.54E+05 0.360
2.85 15.41 4.637 3.969 0.584 1.69E+05 0.366
2.9 15.74 5.072 4.017 0.631 1.86E+05 0.372
2.95 16.10 5.576 4.070 0.685 2.05E+05 0.378
3 16.46 6.199 4.127 0.751 2.28E+05 0.385
Table C3-X-lb Continued [(AI.GaI .• )o.s/no.sP, x=025].

eV £1 £2 n k ex. (em·I ) R
3.05 16.79 7.023 4.183 0.840 2.60E+05 0.393
3.1 17.10 8.006 4.242 0.944 2.97E+05 0.402
3.15 17.43 9.108 4.306 1.058 3.38E+05 0.412
3.2 17.44 10.36 4.343 1.193 3.87E+05 0.420
3.25 16.67 12.14 4.318 1.405 4.63E+05 0.429
3.3 15.47 13.93 4.260 1.635 5.47E+05 0.438
3.35 14.30 15.00 4.185 1.792 6.09E+05 0.444
3.4 13.10 15.51 4.086 1.898 6.54E+05 0.445
3.45 11.80 15.66 3.963 1.976 6.9IE+05 0.445
3.5 10.51 15.55 3.827 2.032 7.21E+05 0.442
3.55 9.514 15.24 3.707 2.055 7.40E+05 0.438
3.6 8.794 14.90 3.612 2.062 7.53E+05 0.434
3.65 8.205 14.52 3.527 2.058 7.62E+05 0.429
3.7 7.832 14.15 3.464 2.042 7.66E+05 0.425
3.75 7.638 13.86 3.425 2.023 7.69E+05 0.421
3.8 7.468 13.63 3.392 2.009 7.74E+05 0.418
3.85 7.310 13.44 3.362 1.999 7.80E+05 0.416
3.9 7.164 13.30 3.337 1.993 7.88E+05 0.414
3.95 7.049 13.21 3.318 1.991 7.97E+05 0.413
4 6.958 13.17 3.305 1.992 8.08E+05 0.412
4.05 6.887 13.17 3.298 1.997 8.20E+05 0.413
4.1 6.835 13.22 3.295 2.006 8.34E+05 0.413
4.15 6.830 13.33 3.302 2.018 8.49E+05 0.415
4.2 6.813 13.49 3.311 2.037 8.67E+05 0.417
4.25 6.714 13.72 3.316 2.069 8.91E+05 0.421
4.3 6.591 14.00 3.322 2.108 9.19E+05 0.425
4.35 6.458 14.34 3.330 2.152 9.49E+05 0.430
4.4 6.307 14.74 3.342 2.205 9.84E+05 0.436
4.45 6.066 15.21 3.350 2.271 1.02E+06 0.444
4.5 5.729 15.76 3.354 2.349 1.07E+06 0.452
4.55 5.297 16.36 3.353 2.439 1.13E+06 0.461
4.6 4.697 16.97 3.339 2.540 1.18E+06 0.472
4.65 3.889 17.53 3.305 2.652 1.25E+06 0.483
4.7 2.850 18.06 3.251 2.778 1.32E+06 0.496
4.75 1.651 18.43 3.175 2.903 1.40E+06 0.509
4.8 0.354 18.53 3.073 3.015 1.47E+06 0.521
4.85 -1.086 18.32 2.938 3.118 1.53E+06 0.534
4.9 -2.529 17.69 2.770 3.194 1.59E+06 0.546
4.95 -3.732 16.80 2.596 3.236 1.62E+06 0.556
5 -4.660 15.79 2.430 3.250 1.65E+06 0.565
5.05 -5.310 14.69 2.270 3.235 1.66E+06 0.571
5.1 -5.695 13.59 2.126 3.196 1.65E+06 0.575
5.15 -5.918 12.59 1.999 3.149 1.64E+06 0.577
5.2 -5.983 11.69 1.890 3.091 1.63E+06 0.578
5.25 -5.912 10.92 1.803 3.027 1.61E+06 0.576
5.3 -5.763 10.26 1.733 2.961 1.59E+06 0.573
5.35 -5.554 9.676 1.674 2.890 1.57E+06 0.568
5.4 -5.323 9.158 1.623 2.821 1.54E+06 0.562
5.45 -5.072 8.715 1.583 2.753 1.52E+06 0.556
5.5 -4.811 8.350 1.553 2.688 1.50E+06 0.548
Table C3·X·lb Continued {(AlxGa}_x)os/nosP. x=025j.

eV £1 £2 n k «(em-I) R
5.55 -4.534 8.076 1.537 2.626 1.48E+06 0.539
5.6 -4.244 7.894 1.536 2.570 1.46E+06 0.529
5.65 -3.942 7.804 1.549 2.518 1.44E+06 0.517
Table C3·X·lc Optical constants of (AlxGa}_x)os/nosP with x=050 at 300 K.

eV £1 £2 n k «(em-I) R
0.5 9.041 3.007 0.251
0.55 9.057 3.010 0.251
0.6 9.076 3.013 0.252
0.65 9.096 3.016 0.252
0.7 9.118 3.020 0.252
0.75 9.142 3.024 0.253
0.8 9.168 3.028 0.253
0.85 9.197 3.033 0.254
0.9 9.228 3.038 0.255
0.95 9.262 3.043 0.255
1 9.298 3.049 0.256
1.05 9.337 3.056 0.257
1.1 9.380 3.063 0.258
1.15 9.425 3.070 0.259
1.2 9.475 3.078 0.260
1.25 9.528 3.087 0.261
1.3 9.585 3.096 0.262
1.35 9.647 3.106 0.263
1.4 9.714 3.117 0.264
1.45 9.786 3.128 0.266
1.5 9.864 3.141 0.267
1.55 9.949 3.154 0.269
1.6 10.04 3.169 0.271
1.65 10.14 3.185 0.273
1.7 10.25 3.202 0.275
1.75 10.37 3.220 0.277
1.8 10.50 3.241 0.279
1.85 10.65 3.263 0.282
1.9 10.81 3.287 0.285
1.95 10.98 3.314 0.288
2 11.18 3.344 0.291
2.05 11.40 3.377 0.295
2.1 11.65 3.414 0.299
2.15 11.94 0.299 3.455 0.043 9.43E+03 0.304
2.2 12.26 0.994 3.504 0.142 3.16E+04 0.310
2.25 12.58 1.637 3.555 0.230 5.25E+04 0.316
2.3 12.84 1.943 3.594 0.270 6.30E+04 0.321
2.35 13.06 2.187 3.626 0.302 7.18E+04 0.325
2.4 13.23 2.381 3.652 0.326 7.93E+04 0.328
2.45 13.38 2.538 3.675 0.345 8.58E+04 0.331
2.5 13.51 2.671 3.694 0.361 9. 16E+04 0.333
2.55 13.64 2.791 3.712 0.376 9.72E+04 0.335
Table C3·X·lc Continued {(Al.Gal_.)o.slno.sP. x=O.50J_

eV £1 ~ n k a (em-I) R
2.6 13.76 2.911 3.730 0.390 1.03E+05 0.338
2.65 13.89 3.043 3.750 0.406 1.09E+05 0.340
2.7 14.05 3.201 3.772 0.424 1.16E+05 0.343
2.75 14.23 3.395 3.799 0.447 1.25E+05 0.346
2.8 14.45 3.639 3.831 0.475 1.35E+05 0.350
2.85 14.72 3.944 3.871 0.509 1.47E+05 0.354
2.9 15.03 4.303 3.915 0.550 1.62E+05 0.360
2.95 15.33 4.722 3.961 0.596 1.78E+05 0.365
3 15.64 5.207 4.008 0.650 1.98E+05 0.371
3.05 15.95 5.818 4.058 0.717 2.22E+05 0.378
3.1 16.26 6.569 4.111 0.799 2.51E+05 0.386
3.15 16.50 7.421 4.159 0.892 2.85E+05 0.393
3.2 16.66 8.419 4.203 1.002 3.25E+05 0,401
3.25 16.70 9.566 4.240 1.128 3.72E+05 0.410
3.3 16.58 10.79 4.264 1.265 4.23E+05 0.418
3.35 16.26 12.11 4.274 1.417 4.81E+05 0.427
3.4 15.46 13.45 4.239 1.586 5.47E+05 0.434
3.45 14.26 14.53 4.160 1.746 6.11E+05 0.439
3.5 13.01 15.23 4.064 1.874 6.65E+05 0.442
3.55 11.71 15.57 3.949 1.971 7.09E+05 0.443
3.6 10.43 15.50 3.816 2.031 7.41E+05 0.441
3.65 9.392 15.22 3.693 2.061 7.63E+05 0.438
3.7 8.714 14.90 3.604 2.067 7.75E+05 0.434
3.75 8.258 14.53 3.533 2.056 7.82E+05 0.430
3.8 7.915 14.17 3.475 2.039 7.86E+05 0.425
3.85 7.635 13.89 3.426 2.026 7.91E+05 0.422
3.9 7.384 13.68 3.386 2.020 7.99E+05 0.419
3.95 7.169 13.53 3.352 2.017 8.08E+05 0.417
4 6.986 13.45 3.327 2.021 8. 19E+05 0.416
4.05 6.841 13.42 3.310 2.028 8.33E+05 0.416
4.1 6.733 13.45 3.300 2.038 8.47E+05 0.417
4.15 6.662 13.53 3.297 2.051 8.63E+05 0.418
4.2 6.591 13.65 3.297 2.069 8.81E+05 0.420
4.25 6.496 13.82 3.299 2.095 9.03E+05 0.423
4.3 6.393 14.06 3.304 2.127 9.27E+05 0.427
4.35 6.271 14.35 3.312 2.167 9.56E+05 0.431
4.4 6.112 14.72 3.320 2.216 9.89E+05 0.437
4.45 5.822 15.15 3.320 2.281 1.03E+06 0.444
4.5 5.414 15.65 3.315 2.361 1.08E+06 0.452
4.55 4.939 16.22 3.309 2.452 1.13E+06 0.461
4.6 4.342 16.81 3.294 2.551 1.19E+06 0.472
4.65 3.566 17.36 3.262 2.660 1.25E+06 0.483
4.7 2.528 17.88 3.208 2.786 1.33E+06 0.496
4.75 1.287 18.22 3.127 2.914 1.40E+06 0.510
4.8 -0.032 18.27 3.020 3.025 1.47E+06 0.523
4.85 -1.447 18.00 2.882 3.123 1.54E+06 0.536
4.9 -2.852 17.29 2.709 3.192 1.59E+06 0.547
4.95 -3.974 16.32 2.532 3.222 1.62E+06 0.557
5 -4.747 15.33 2.377 3.224 1.63E+06 0.564
5.05 -5.269 14.31 2.234 3.203 1.64E+06 0.569
Table C3-X-lc Continued [(AI.Gal_.}oslnosP, x=050j.

eV £1 £2 n k a (em-I) R
5.1 -5.586 13.33 2.106 3.165 1.64E+06 0.572
5.15 -5.774 12.62 2.012 3.134 1.64E+06 0.574
5.2 -5.850 12.02 1.938 3.099 1.63E+06 0.575
5.25 -5.820 11.27 1.853 3.042 1.62E+06 0.574
5.3 -5.697 10.56 1.775 2.974 1.60E+06 0.571
5.35 -5.495 9.982 1.718 2.906 1.58E+06 0.566
5.4 -5.280 9.510 1.673 2.842 1.56E+06 0.560
5.45 -5.057 9.082 1.634 2.779 1.54E+06 0.554
5.5 -4.822 8.720 1.604 2.719 1.52E+06 0.547
5.55 -4.549 8.455 1.589 2.660 1.50E+06 0.539
5.6 -4.237 8.285 1.592 2.602 1.48E+06 0.528
5.65 -3.885 8.211 1.612 2.546 1.46E+06 0.515
Table C3-X-ld Optical constants of (AI.Gal_.}os InosP with x=0.75 at 300 K.

eV £1 £Z n k a (em-I) R
0.5 8.806 2.968 0.246
0.55 8.818 2.970 0.246
0.6 8.831 2.972 0.246
0.65 8.845 2.974 0.247
0.7 8.861 2.977 0.247
0.75 8.878 2.980 0.247
0.8 8.897 2.983 0.248
0.85 8.918 2.986 0.248
0.9 8.940 2.990 0.249
0.95 8.964 2.994 0.249
1 8.990 2.998 0.250
1.05 9.018 3.003 0.250
1.1 9.048 3.008 0.251
1.15 9.080 3.013 0.252
1.2 9.116 3.019 0.252
1.25 9.154 3.025 0.253
1.3 9.195 3.032 0.254
1.35 9.239 3.040 0.255
1.4 9.287 3.047 0.256
1.45 9.338 3.056 0.257
1.5 9.395 3.065 0.258
1.55 9.456 3.075 0.259
1.6 9.522 3.086 0.261
1.65 9.594 3.097 0.262
1.7 9.673 3.110 0.264
1.75 9.760 3.124 0.265
1.8 9.855 3.139 0.267
1.85 9.960 3.156 0.269
1.9 10.08 3.174 0.271
1.95 10.20 3.195 0.274
2 10.35 3.217 0.276
2.05 10.51 3.242 0.279
2.1 10.69 3.270 0.283
Table C3-X-ld Continued {(Al.Ga/ .• )os/nosP, x=O.75j.

eV £1 £:z n k ex (em· l ) R
2.15 10.90 3.302 0.286
2.2 11.14 3.338 0.290
2.25 11.42 3.379 0.295
2.3 11.74 3.427 0.301
2.35 12.13 3.482 0.307
2.4 12.59 3.548 0.314
2.45 12.89 1.760 3.599 0.245 6.08E+04 0.321
2.5 13.05 2.015 3.623 0.278 7.05E+04 0.324
2.55 13.15 2.269 3.640 0.312 8.06E+04 0.327
2.6 13.24 2.554 3.655 0.349 9.21E+04 0.329
2.65 13.38 2.722 3.676 0.370 9.95E+04 0.332
2.7 13.54 2.929 3.701 0.396 1.08E+05 0.335
2.75 13.77 3.050 3.734 0.408 1.14E+05 0.338
2.8 13.99 3.337 3.766 0.443 1.26E+05 0.343
2.85 14.26 3.538 3.804 0.465 1.34E+05 0.347
2.9 14.51 3.861 3.842 0.502 1.48E+05 0.352
2.95 14.81 4.180 3.886 0.538 1.6IE+05 0.357
3 15.11 4.569 3.931 0.581 1.77E+05 0.362
3.05 15.45 5.021 3.981 0.631 1.95E+05 0.368
3.1 15.79 5.555 4.033 0.689 2.16E+05 0.375
3.15 16.13 6.158 4.086 0.754 2.41E+05 0.382
3.2 16.45 6.894 4.140 0.833 2.70E+05 0.389
3.25 16.94 7.509 4.211 0.892 2.94E+05 0.397
3.3 17.25 8.441 4.269 0.989 3.31E+05 0.406
3.35 17.35 9.652 4.313 1.119 3.80E+05 0.415
3.4 17.19 11.01 4.336 1.270 4.38E+05 0.424
3.45 16.76 12.37 4.335 1.427 4.99E+05 0.431
3.5 15.93 13.69 4.298 1.593 5.65E+05 0.438
3.55 14.79 14.76 4.224 1.747 6.29E+05 0.443
3.6 13.41 15.45 4.115 1.877 6.85E+05 0.446
3.65 12.66 15.65 4.048 1.932 7.15E+05 0.446
3.7 11.47 15.72 3.932 1.999 7.50E+05 0.445
3.75 10.40 15.53 3.814 2.036 7.74E+05 0.442
3.8 9.608 15.21 3.715 2.047 7.89E+05 0.438
3.85 8.936 14.85 3.624 2.049 8.ooE+05 0.433
3.9 8.427 14.53 3.552 2.046 8.09E+05 0.430
3.95 8.111 14.27 3.502 2.037 8.16E+05 0.426
4 7.903 14.09 3.468 2.031 8.24E+05 0.424
4.05 7.725 13.97 3.441 2.029 8.33E+05 0.423
4.1 7.600 13.93 3.425 2.033 8.45E+05 0.422
4.15 7.491 13.94 3.415 2.041 8.59E+05 0.423
4.2 7.411 14.03 3.411 2.056 8.75E+05 0.424
4.25 7.317 14.16 3.410 2.076 8.94E+05 0.426
4.3 7.105 14.35 3.400 2.111 9.2OE+05 0.429
4.35 6.979 14.62 3.404 2.147 9.47E+05 0.433
4.4 6.821 14.97 3.411 2.194 9.79E+05 0.438
4.45 6.608 15.40 3.418 2.253 1.02E+06 0.444
4.5 6.343 15.92 3.426 2.323 1.06E+06 0.452
4.55 5.947 16.52 3.428 2.410 1.11E+06 0.460
4.6 5.355 17.20 3.418 2.515 1.17E+06 0.471
Table C3-X-ld Continued [(AI.GaJ .• )o.sino.sP. x=0.75j.

eV EI Ez n k a. (em·l ) R
4.65 4.545 17.88 3.391 2.636 1.24E+06 0.483
4.7 3.623 18.54 3.355 2.763 1.32E+06 0.495
4.75 2.345 18.97 3.276 2.896 1.39E+06 0.509
4.8 0.887 19.14 3.166 3.022 1.47E+06 0.522
4.85 -0.696 18.90 3.018 3.131 1.54E+06 0.535
4.9 -2.159 18.25 2.848 3.205 1.59E+06 0.546
4.95 -3.356 17.35 2.676 3.243 1.63E+06 0.555
5 -4.241 16.23 2.504 3.242 1.64E+06 0.560
5.05 -4.840 15.20 2.357 3.224 1.65E+06 0.565
5.1 -5.231 14.28 2.234 3.197 1.65E+06 0.568
5.15 -5.581 13.58 2.133 3.183 1.66E+06 0.572
5.2 -5.661 12.68 2.028 3.126 1.65E+06 0.572
5.25 -5.632 11.90 1.941 3.066 1.63E+06 0.570
5.3 -5.539 11.18 1.863 3.001 1.61E+06 0.567
5.35 -5.405 10.60 1.801 2.941 1.60E+06 0.563
5.4 -5.207 10.08 1.752 2.877 1.58E+06 0.558
5.45 -4.991 9.680 1.718 2.818 1.56E+06 0.552
5.5 -4.713 9.305 1.691 2.752 1.53E+06 0.543
5.55 -4.445 9.042 1.678 2.695 1.52E+06 0.535
5.6 -4.198 8.902 1.680 2.650 1.50E+06 0.527
Table C3-X-le Optical constants o/(Al.GaJ.,")o.sino.sP withx=l.OO at 300 K.

eV EI Ez n k a. (em·l ) R
0.5 8.572 2.928 0.241
0.55 8.579 2.929 0.241
0.6 8.586 2.930 0.241
0.65 8.595 2.932 0.241
0.7 8.604 2.933 0.242
0.75 8.614 2.935 0.242
0.8 8.625 2.937 0.242
0.85 8.637 2.939 0.242
0.9 8.651 2.941 0.243
0.95 8.665 2.944 0.243
1 8.680 2.946 0.243
1.05 8.697 2.949 0.244
1.1 8.715 2.952 0.244
1.15 8.734 2.955 0.244
1.2 8.755 2.959 0.245
1.25 8.778 2.963 0.245
1.3 8.802 2.967 0.246
1.35 8.829 2.971 0.246
1.4 8.857 2.976 0.247
1.45 8.889 2.981 0.248
1.5 8.922 2.987 0.248
1.55 8.959 2.993 0.249
1.6 8.999 3.000 0.250
1.65 9.043 3.007 0.251
1.7 9.091 3.015 0.252
Table C3-X-le Continued {(AI.Gaj .• )oslnosP, x=l.oOj.

eV £1 £2 n k a (cm· l ) R
1.75 9.144 3.024 0.253
1.8 9.202 3.033 0.254
1.85 9.266 3.044 0.255
1.9 9.338 3.056 0.257
1.95 9.418 3.069 0.259
2 9.507 3.083 0.260
2.05 9.609 3.100 0.262
2.1 9.724 3.118 0.265
2.15 9.856 3.139 0.267
2.2 10.01 3.164 0.270
2.25 10.19 3.192 0.273
2.3 10.40 3.225 0.277
2.35 10.65 3.264 0.282
2.4 10.96 3.311 0.287
2.45 11.35 3.370 0.294
2.5 11.85 3.443 0.302
2.55 12.52 3.539 0.313
2.6 12.84 0.914 3.585 0.127 3.36E+04 0.318
2.65 13.10 1.674 3.627 0.231 6.20E+04 0.324
2.7 13.21 2.050 3.646 0.281 7.70E+04 0.327
2.75 13.20 2.802 3.653 0.384 1.07E+05 0.330
2.8 13.31 3.026 3.671 0.412 1.17E+05 0.332
2.85 13.46 3.251 3.695 0.440 1.27E+05 0.335
2.9 13.64 3.496 3.723 0.470 1.38E+05 0.339
2.95 13.84 3.765 3.754 0.501 1.50E+05 0.343
3 14.05 4.088 3.787 0.540 1.64E+05 0.347
3.05 14.29 4.434 3.824 0.580 1.79E+05 0.352
3.1 14.55 4.810 3.865 0.622 1.96E+05 0.357
3.15 14.80 5.267 3.906 0.674 2. 15E+05 0.363
3.2 15.06 5.759 3.948 0.729 2.37E+05 0.369
3.25 15.32 6.307 3.993 0.790 2.60E+05 0.375
3.3 15.56 6.962 4.038 0.862 2.88E+05 0.382
3.35 15.78 7.693 4.083 0.942 3.20E+05 0.389
3.4 15.96 8.547 4.127 1.036 3.57E+05 0.397
3.45 16.04 9.490 4.164 1.140 3.99E+05 0.404
3.5 15.98 10.58 4.192 1.262 4.48E+05 0.413
3.55 15.73 11.76 4.205 1.399 5.03E+05 0.421
3.6 15.24 12.95 4.197 1.543 5.63E+05 0.429
3.65 14.40 14.06 4.155 1.692 6.26E+05 0.435
3.7 13.29 14.96 4.080 1.833 6.87E+05 0.440
3.75 12.04 15.50 3.979 1.947 7.40E+05 0.443
3.8 10.77 15.67 3.859 2.030 7.82E+05 0.443
3.85 9.669 15.53 3.739 2.076 8.lOE+05 0.441
3.9 8.932 15.22 3.646 2.088 8.25E+05 0.438
3.95 8.193 14.86 3.547 2.094 8.39E+05 0.434
4 7.748 14.51 3.478 2.086 8.46E+05 0.430
4.05 7.445 14.23 3.428 2.076 8.52E+05 0.427
4.1 7.241 14.05 3.395 2.070 8.60E+05 0.425
4.15 7.093 13.95 3.372 2.068 8.70E+05 0.423
4.2 6.974 13.92 3.357 2.073 8.83E+05 0.423
Table C3-X-le Continued [(AI.Gal .• )o.s/TIo.sP, x=1.00J.

eV £1 £2 n k a (cm·1) R
4.25 6.916 13.99 3.355 2.084 8.98E+05 0.424
4.3 6.846 14.11 3.356 2.102 9. 16E+05 0.426
4.35 6.737 14.31 3.358 2.131 9.40E+05 0.429
4.4 6.606 14.59 3.363 2.170 9.68E+05 0.433
4.45 6.352 14.94 3.361 2.223 1.00E+06 0.439
4.5 6.108 15.38 3.366 2.285 1.04E+06 0.446
4.55 5.742 15.91 3.366 2.364 1.09E+06 0.454
4.6 5.116 16.50 3.346 2.466 1.15E+06 0.464
4.65 4.363 17.13 3.319 2.580 1.22E+06 0.475
4.7 3.400 17.69 3.272 2.703 1.29E+06 0.488
4.75 2.201 18.07 3.194 2.829 1.36E+06 0.501
4.8 0.891 18.24 3.094 2.947 1.43E+06 0.514
4.85 -0.457 18.19 2.978 3.054 1.50E+06 0.526
4.9 -1.849 17.55 2.811 3.122 1.55E+06 0.537
4.95 -2.937 16.63 2.641 3.149 1.58E+06 0.544
5 -3.735 15.67 2.487 3.150 1.60E+06 0.549
5.05 -4.304 14.78 2.355 3.138 1.61E+06 0.554
5.1 -4.721 13.82 2.223 3.109 1.61E+06 0.557
5.15 -4.966 12.98 2.113 3.071 1.60E+06 0.558
5.2 -5.085 12.19 2.015 3.024 1.59E+06 0.558
5.25 -5.127 11.50 1.932 2.976 1.58E+06 0.557
5.3 -5.070 10.86 1.859 2.920 1.57E+06 0.555
5.35 -4.948 10.27 1.796 2.859 1.55E+06 0.551
5.4 -4.782 9.755 1.744 2.797 1.53E+06 0.546
5.45 -4.591 9.327 1.704 2.737 1.5IE+06 0.540
5.5 -4.381 9.010 1.679 2.683 1.50E+06 0.533
5.55 -4.129 8.730 1.663 2.626 1.48E+06 0.524
5.6 -3.865 8.532 1.659 2.572 1.46E+06 0.515
The AlXGayInl_X_yAs quaternary system can be grown lattice-matched to InP [(AlxGa1_
x)0.4sIn0.52As/lnP, see Table Cl-4]. The alloy system is an ideal candidate for the imple-
mentation of several electronic and optoelectronic devices, since its band gap can be
continuously varied from 0.75 eV (FO, Gao.47Ino.s3As) to 1.47 eV (FLO, Alo.4sIno.s2As).
Indeed, the application of this quaternary in various electronic and optoelectronic de-
vices have been demonstrated in recent years (see Ref. [1]).
The refractive-index dispersion in the transparent region and a region little above the
Eo edge of (AlxGa1_J0.4SIn0.52As has been measured by several authors [2-4]. The sam-
ples used in these studies were grown on InP substrates by MBE. Measurement tech-
niques were modal cutoff spectroscopy [2] and reflectance technique [3,4]. Figure C3-
XI-I shows, as an example, the n(E) data for (Al.Ga 1_.)0.4sInO.S2 As/lnP, together with
those for AlAso.s6Sbo~nP, as measured by the reflectance technique [4]. The corre-
sponding n values are listed in Table C3-XI-1. Mondry et al. [3] modeled their meas-
ured n data with the first-order Sellmeier equation [see Eq. (C3.4)].
Near-band-edge absorption in (AlxGal_Jo.4sIno.52As/lnP (x=O-O.5) has been measured
by Masu et al. [5]. The spectra depicted the sharp decline of a, common to the direct-
band-gap semiconductors, as shown in Fig. C3-XI-2. Swarup et al. [6] also reported the
absorption spectra of AlxGayInl_x_yAs quaternary grown by LPE on (lII)As face of
GaAs substrates. The optical absorption spectra of AI..!n1_.As/lnP (x=0.448-0.488)
have also been calculated from the PL excitation spectra by Roura et al. [7]. The effect
300K
-.... Ag
. . . . . . :;-...T--_. /-",
......... I
x ...-....J_- - - . . '"
~ 3.5r-~"
"
'.'. '._X-O.O
:z ~ \ '- (InGaAsl
-w '- '-..
"., "'-. ' - - '-'--.- 0.27
>
i= ""'- " ' .-".
.,........
.......... - ___.---.-.-
• 0 .49
e:w
~
'--...- -__
" - . - - ._ _ - - - 0.54
"---
._._
0.75
1.0
--
0:: " nAIAs)
3.0r- "'---- - - . - . _ - AIAsSb

I
1.0 1.5 2.0
WAVELENGTH (pm)
Figure C3-XI-l Refractive indices for (Al.Ga\ .•}o.48InO.SZAs/lnP, together with those for
AlAso.s6Sbo.MllnP, as measured by the reflectance technique. (From Asai and Iwamura [4].)
398
TABLE C3-XI-l Room-temperature refractive indices in the region below and a little above
the Eo edge of (AI.Gal.Jo.4sln052AsllnP measured by reflectance technique [4J.
n
A (J.Ull) eV x=0 x=0.27 x=O.49 x=0.54 x=O.75 x=1.00
2 0.620 3.485 3.388 3.331 3.270 3.235 3.172
1.9 0.652 3.509 3.390 3.326 3.278 3.236 3.175
1.8 0.689 3.551 3.404 3.343 3.289 3.249 3.181
1.75 0.708 3.576
1.7 0.729 3.598 3.415 3.347 3.294 3.253 3.188
1.65 0.751 3.592
1.6 0.775 3.559 3.434 3.361 3.308 3.264 3.196
1.55 0.800 3.545
1.5 0.826 3.543 3.472 3.375 3.326 3.278 3.208
1.45 0.855 3.499
1.4 0.885 3.549 3.515 3.401 3.348 3.292 3.224
1.35 0.918 3.522
1.3 0.953 3.563 3.526 3.442 3.382 3.317 3.249
1.25 0.992 3.475
1.2 1.033 3.581 3.535 3.505 3.428 3.345 3.278
1.15 1.078 3.515 3.440
1.1 1.127 3.608 3.554 3.516 3.454 3.389 3.301
1.05 1.180 3.460
1 1.240 3.628 3.572 3.530 3.482 3.435 3.331
xl0 8
N
IE
~
N
lj
Figure" C3-XI-2 Absorption coeffi-

cient for (Al.Ga1-.,)0.4sIn0.5ZAs/lnP at 300
K plotted as a function of photon en-
0 ergy. (From Masu et at. [5].)
0.7 0.8 0.9 1.0 1.1 1.2 1.3
hv (eV)
of strain on the band-gap energy has been properly taken into consideration in the cal-
culation. Their obtained results are reproduced in Fig. C3-Xl-3.
The optical constants in the interband transition region of (AlxGal_x)o.4sIno.5zAs/lnP
have been determined using SE by several authors [1,8-10]. The energies and bro-
adening parameters of the El and El+l11 CPs as a function of Al composition are deter-
mined from an SCP analysis of the SE data [1]. The refractive indices in the wave-
length range 1.0-1.9 !lm of (AlxGal.x)o.4sIno.5ZAs/lnP have also been determined by SE
2
---E
I
a
(J
c
.Q 1
+-'
0..
L
o Figure C3·XI·3 Optical absorption spec-
<fJ tra for Al.Inl .•As/InP (A: =0.488; B:
..0
« =0.484; C: =0.481; D: =0.461; E:
=0.448) at 14 K. (From Roura et al. [7].)
O+O~~~~~~~~~~~~~
1.45 1.50 1.55 1.60
Photon Energy ( eV)
[10]. SE studies on Alo.4sIno.52As/InP and Gao.47Ino.53As/InP have also been performed by

Pickering et al. [11], Dinges et at. [12], and Alterovitz et al. [13].
Tables C3-XI-2a-C3-XI-2c list the room-temperature values of £=£I+iEz, n*=n+ik, ex,
and R for (AlxGal.x)0.4sIllo.52As/InP with .x=O.23 (a), 0.85 (b), and 1.0 (c,
Alo.4sIllo.52As/InP) taken from Dinges et al. [8,12].
Figure C3-XI-4 represents the composition dependence of the band-gap energies (Eo,
EgX, and E gL ) for (AlxGal ..)0.4sIllo.52As/InP, as calculated from Eq. (C1.8). The refractive-
index dispersion with x-composition increments of 0.1 for (AlxGal.x)0.4SIn0.52As/InP, as
calculated from Eq. (C3.4), is shown in Fig. C3-XI-5. The (£1' Ez) and (n, k) values list-
ed in Table C3-XI-2c (Al0.4SIno.52As/InP) are plotted in Figs. C3-XI-6 and C3-XI-7, re-
spectively.
REFERENCES
1. J.-W. Pan, J.-L. Shieh, J.-H. Gau, J.-1. Chyi, J.-c. Lee, and K.-J. Ling, 1. Appl.
Phys. 78, 442 (1995).
2. C. De Bernardi, M. Meliga, S. Morasca, C. Rigo, B. Sordo, and A. Stano, 1. Appl.
Phys. 68, 6513 (1990).
3. M. J. Mondry, D. 1. Babic, J. E. Bowers, and L. A. Coldren, IEEE Photon. Tech-
nolo Lett. 4, 627 (1992).
4. H. Asai and H. Iwamura, Inst. Phys. Conf. Ser. 145,985 (1996).
5. K. Masu, T. Mishima, S Hiroi, M. Konagai, and K. Takahashi, 1. Appl. Phys. 53,
7558 (1982).
6. P. Swarup, R. K. Jain, S. N. Verma, S. Charan, and D. M. Tandle, Phys. Status
Solidi A 72, K189 (1982).
7. P. Roura, M. L6pez-de Miguel, A. Cornet, and J. R. Morante, 1. Appl. Phys. 81,
6916 (1997).
8. H. W. Dinges, H. Burkhard, R. LOsch, H. Nickel, and W. Schlapp, Appl. Surf Sci.

65/66,442 (1993).
9. H. W. Dinges, H. Burkhard, R. LOsch, H. Nickel, and W. Schlapp, Appl. Surf. Sci.
69,355 (1993).
to. H. W. Dinges, H. Burkhard, R. LOsch, H. Nickel, and W. Schlapp, Mater. Sci.
Eng.B21, 174(1993).
11. C. Pickering, N. S. Garawal, D. Lancefield, 1. P. Piel, and R. Blunt, Appl. Surf Sci.
50,346 (1991).
12. H. W. Dinges, H. Burkhard, R. LOsch, H. Nickel, and W. Schlapp, Appl. Surf Sci.
54,477 (1992).
13. S. A. Alterovitz, R. M. Sieg, J. Pamulapati, and P. K. Bhattacharya, Appl. Phys.
Lett. 62, 1411 (1993).
3.0..---------------,
......
~
-2.0
o~~~~~~~~~~~
o 0.5 1.0
X
Figure C3·XI·4 Composition dependence of the band-gap energies (Eo, E/, and EgL ) for
(Al.Gal .•)0.4sInO.S2As/InP at 300 K.
4.0c-----------------------,
1.0
InP
Q5 1.0 1.5 2.0

( eV )
Figure C3-XI-5 Refractive indices for (AlxGal_x)Q.4sInO.s2As/InP with x-composition increments

of 0.1 at 300 K.
Figure C3-XI-6 £1(E) and £lE) spectra for AlO.4SIn0.52As/InP at 300 K.

AI0.48Ino.5~s/l nP
4
n
1 k
o 1 2 345 6
Photon energy (eV)
Figure C3-XI-7 n(E) and k(E) spectra for Alo.4sIno.52As/lnP at 300 K.
Table C3·XI-2a Optical constants of (Al.Gal .• )o.slno.sAs withx=0.23 at 300 K.

eV £1 £2 n k a (cm,l) R
0.65 11.56 3.400 0.298
0.69 11.66 3.415 0.299
0.73 11.80 3.435 0.301
0.77 11.93 3.454 0.304
0.83 12.11 3.480 0.306
0.89 12.25 0.119 3.500 0.017 1.53E+03 0.309
0.95 12.38 0.528 3.520 0.Q75 7.25E+03 0.311
1.03 12.59 0.639 3.550 0.090 9.42E+03 0.314
1.14 12.73 0.821 3.570 0.115 1.33E+04 0.317
1.22 12.84 1.004 3.586 0.140 1.72E+04 0.319
1.32 13.00 1.300 3.610 0.180 2.41E+04 0.322
1.46 13.20 1.602 3.640 0.220 3.25E+04 0.325
1.62 13.53 1.777 3.686 0.241 3.96E+04 0.330
1.96 14.91 2.574 3.876 0.332 6.59E+04 0.351
2.27 17.31 4.140 4.190 0.494 1.14E+05 0.383
Table C3-XI·2b Optical constants of (Al.Gal .• )o.s lno.sAs with x=0.85 at 300 K.
0.65 10.27 3.204 0.275

0.69 10.33 3.214 0.276
0.73 10.41 3.226 0.277
0.77 10.44 3.231 0.278
0.83 10.51 3.242 0.279
Table C3·XI·2b Continued [(AI.GaJ .• )o.slnosAs,x=0.85J.

eV £1 £2 n k a (em· l ) R
0.89 10.61 3.258 0.281
0.95 10.75 3.278 0.284
1.03 10.88 3.298 0.286
1.14 11.16 0.0067 3.341 0.001 1.15E+02 0.291
1.22 11.50 0.027 3.391 0.004 4.93E+02 0.297
1.46 12.13 0.815 3.485 0.117 1.73E+04 0.307
2.27 14.92 2.817 3.880 0.363 8.35E+04 0.352
Table C3·XI·2c Optical constants of (Al.GaJ .• )o.slno.sAs with x=1.00 at 300 K.

eV £1 £2 n k a (em· l ) R
0.83 10,43 3.23
0.89 10.50 3.24
0.95 10.56 3.25
1.03 10.66 3.265
1.24 11.05 0.266 3.325 0.04 5.03E+03 0.289
1.6 12.39 2.408 3.536 0.340 5.52E+04 0.316
1.8 12.82 2.727 3.600 0.379 6.91E+04 0.324
2 13.34 3.352 3.681 0.455 9.23E+04 0.334
2.2 14.04 4.158 3.787 0.549 1.22E+05 0.348
2.4 15.10 5.529 3.949 0.700 1.70E+05 0.368
2.6 16.41 7.934 4.162 0.953 2.5IE+05 0.396
2.8 16.23 12.22 4.275 1.430 4.06E+05 0.428
3 12.05 15.64 3.987 1.962 5.97E+05 0.445
3.2 8.243 15.08 3.566 2.115 6.86E+05 0.437
3.4 6.388 13.66 3.277 2.085 7. 19E+05 0.421
3.6 5.813 12.76 3.149 2.026 7.39E+05 0.409
3.8 5.601 12.73 3.123 2.038 7.85E+05 0.410
4 5.237 13.34 3.128 2.132 8.65E+05 0.420
4.2 4.372 15.11 3.170 2.383 1.0 1E+06 0.450
4.4 2.022 16.73 3.072 2.723 1.2IE+06 0.488
4.6 ·2.617 16.10 2.617 3.077 1.43E+06 0.536
4.8 ·4.510 12.99 2.149 3.021 1.47E+06 0.549
5 ·4.576 8.923 1.651 2.702 1.37E+06 0.539
The A1P.AsySb 1.•.y quaternary system can be grown lattice-matched to GaAs, InP, and
InAs (see Table Cl-4). However, no detailed data on the optical properties of this alloy
system are available at present.
Figure C3-XII-l shows the composition dependence of the band-gap energies (Eo,
EgX, and E g L ) for (a) AIP.AsySb1 .•.y/GaAs. (b) AIP.AsySb1 .•. y/InP. and (c)
AlP,AsySb1 .•.JInAs. as calculated from Eq. (C1.8). The refractive-index curves for (a)
AlP,AsySb1 .•./GaAs. (b) AlP,AsySb1 .•.JInP. and (c) AlP.AsySbl .•.JInAs. as calculated
from Eq. (C1.14). are also shown in Fig. C3-XII-2. It is understood from Fig. C3-XII-l
that the alloy systems fall into the indirect-band-gap region (Egx) over the entire range
of alloy compositions.
Eo
Eo
~ ~ EL
9
EX
9
A.
e;
~
(a) (b)
A1PxAsyS~_x_y'GaAs
1.0 1.0
AlPxAsySb1_x_llnAs
3.01-
~ Eo
EL
9
2.01-
A.
EX
~ 9
C
Z
~ 1.0 I-
(c)
0 1
0 0.1 0.2
y
Figure C3-XII-! Composition dependence of the band-gap energies (Eo. E/. and EgL ) for (a)
AlP"ASySbl.x-/GaAS. (b) AlP.AsySb1 .•.jlnP. and (c) AlP"AsySb1.x-jlnAs at 300 K.
405
~Or-----------------------~ 5.5,---------------,
AlP As Sb IInP
x Y l-x-y
4.5
y.o Y=O
5.0
0.5
4.0 4.5
c c
) GaAs
3.5~ 4.0
3.5
(a)
3.0 ~.w..Ju.J...l_':J':W-LW...LL.w.J...L.Lu.J...w..JLLl
o ~
eV )
~5r----------------------,
5.0
4.5
4.0
InAs
3.5 )
(c)
Figure C3-XII-2 Refractive indices for (a) AlP.AsySb1_•./GaAs, (b) AlP.AsySb1_._JInP, and (c)
AlPxAsySb1_x_jInAs at 300 K.
XIII GaPxASySbl_x_y
The GaPxAsySbl_X_y quaternary system can be grown lattice-matched to GaAs. InP. and
In As (see Table CI-4). Brilliant photo- and cathodoluminescence were observed in
bulk GaPxAsySbl_x_y grown by transport reactions [1]. No further studies have been per-
formed on this alloy system.
Figure C3-XIII-l shows the composition dependence of the band-gap energies (Eo.
Egx. and EgL ) for (a) GaPxAsySb1_X-JGaAs. (b) GaPxAsySbl_x_JInP. and (c) GaPxAsySb l_x_
/InAs. as calculated from Eq. (C1.8). The refractive-index curves for (a) GaPxAsySb l_x_
/GaAs. (b) GaPxAsySbl_x_JInP. and (c) GaPxAsySbl_x-/lnAs. as calculated from Eq.
(C1.14). are also shown in Fig. C3-XIII-2.
REFERENCES
1. E. Lendvay. Czech. f. Phys. B 34. 479 (1984).
-;2.0
'"
a.. a..
(3 (3 EX
9
Q
~ 1.0 ___~
~1.0IY EL
9
~
Eo
(a) (b)
~~~~~0~p~~~~1~ 0.5 1.0
Y Y
2~r-------------~
a.. EX
<t 9
~1.0
Q EL
Z 9
«
III
Eo
0.5-
(c)
0 I
0 0.05 0.1
y
Figure C3-XIII-l Composition dependence of the band-gap energies (Eo. E/. and EgL ) for (a)
GaPxAsySb1.x.jGaAs. (b) GaPxAsySb1_x_jInP. and (c) GaPxAsySb1.x.jInAs at 300 K.
407
4.0r-----------~ 4.0.------------,
3.8 3.8
3.6 3.6
0.5
C InP
C y,O
3.4 3.4
y'O
3.2 3.2
(a)
(b)
3.0 3.0
0 1.0 2.0 0 0.5 1.0 1.5
-I1c.o eV ) -I1w eV )
3.9
3.7
roO
InAs
C
3.5
(c)
GaPxAsySb1_x_/lnAs
3.3
0 0.5 1.0
-1\(1) ( eV )
Figure C3-XIII-2 Refractive indices for (a) GaP.AsySb1 .•.JGaAs, (b) GaP.AsySb1 .•.)InP, and
(c) GaP.AsySb1 .•.)InAs at 300 K.
The InPxAsySbl_x_y quaternary system can be grown lattice-matched to GaSb and In As
(see Table CIA). The quaternary system has promising applications as light sources
and detectors in the midwavelength IR band (2-5 /lm) [1-4].
The IR reflectivity spectra of some InPxAsySbl_x_y alloys grown on (111)InAs have
been measured by Belov et al. [5]. An investigation of optical transmission has been
made on LPE-grown InPxAsySb1_x_jInAs [6].
Figure C3-XIV-l shows the composition dependence of the band-gap energies (Eo,
E/, and E gL ) for (a) InPxAsySb1_x_/GaSb and (b) InPxAsySb1_x_/InAs, as calculated from
Eq. (C1.8) [7]. The refractive-index curves with y-composition increments of 0.1 for
(a) InPxAsySb1_X-/GaSb and (b) InP,AsySb1_x_jInAs, as calculated from Eq. (C1.14), are
also shown in Fig. C3-XIV-2 [7]. We can see in Fig. C3-XIV-l that the alloy systems
fall into the direct-band-gap region (Eo) over the entire range of alloy compositions.
REFERENCES
1. A. N. Baranov, A. N. Imenkov, V. Sherstnev, and Y. P. Yakovlev, Appl. Phys.
Lett. 64,2480 (1994).
2. J. Diaz, H. Yi, A. Rybaltowski, B. Lane, G. Lukas, D. Wu, S. Kim, M. Erdtmann,
E. Kaas, and M. Razeghi, Appl. Phys. Lett. 70,40 (1997).
3. D. Wu, E. Kaas, J. Diaz, B. Lane, A. Rybaltowski, H. J. Yi, and M. Razeghi,
IEEE Photon. Technol. Lett. 9, 173 (1997).
4. X. Y. Gong, T. Yamaguchi, H. Kan, T. Makino, T. !ida, T. Kato, M. Aoyama, Y.
Hayakawa, and M. Kumagawa, lpn. l. Appl. Phys. 36, 2614 (1997).
5. A. G. Belov, G. M. Zinger, M. A. II'in, Yu. N. Korchagin, E. P. Rashevskaya, and
A. 1. Ryskin, Sov. Phys. Solid State 22, 839 (1980).
6. N. P. Esina, N. V. Zotova, B. A. Matveev, L. D. Neulmina, N. M. Stus', and G. N.
Talalakin, Sov. Phys. Semicond. 15, 1372 (1981).
409
2D------------------~
~ 1.5
Q. Q.
~1.0 ~ 1.0
o o
i i
0.5 0.5
(a) (b)
01L-L-L-~~~~~~~ OL-L-L-~~~~~~~
o 0.5 1.0 o 015 to
Y y
Figure C3·XIV·l Composition dependence of the band-gap energies (Eo, E/, andEgL ) for (a)
InPxAsySbl-x-/GaSb and (b) InPxAsySbl-x_jInAs at 300 K. (From Adachi [7].)
(a)
InPxAsySbl_x_y'GaSb
0,5 1.0
ilw ( eV )
3.9
InPxAsySb1_x-y/lnAs
y·o
Figui"e C3·XIV·2 Refractive
3.7
indices for (a) InP.AsySb l_x_
jGaSb and (b) InP xAsySbl-x_
C jInAs with y-composition in-
crements of 0.1 at 300 K.
3.5 (From Adachi [7].)
(b)
3.3
0 0.5 1.0
-1\", ( eV )
D
II-VI SEMICONDUCTORS
D1 MAGNESIUM OXIDE
(MIO)
01.1 GENERAL REMARKS

Magnesium oxide (MgO) is a compound crystallizing in the rocksalt structure. Re-
cently, MgO films have attracted much attention as a buffer layer for the deposition of
high-To superconductors or ferroelectrics and as a wide-band-gap II-VI semiconductor
for potential optoelectronic device applications (see Refs. [1,2]). This material has very
low standard free energy and, hence, high thermodynamic stability, and is insoluble in
water.
D1.2 ELECTRONIC ENERGY ·BAND STRUCTURE

Because MgO is a prototype for simple oxides, the electronic structure of this material
has been the subject of many studies (see Ref. [3]). Disagreement exists about the
412 II-VI SEMICONDUCTORS
position of the minimum of the lowest conduction band that is placing at r l and antici-
pating a direct gap or at X3 indicating an indirect gap (see Ref. [4]). Recent band-
structure calculations based on the LDA provide the direct gap of -5.2 eV at r [3,5].
Figure Dl-l reproduces the electronic energy-band structure as calculated by Ching et
al. [5]. The experimental optical band gap is -7.7-7.8 eV at T=77-85 K [4,6]. The ex-
tremely large gap is as expected since MgO is highly ionic.
16
12
41
s:-
~
o
W
-41
Figure Dl·l Electronic energy-
band structure of MgO as cal-
culated within the LDA method.
-12 (From Ching et al. [5].)
-16
L r X K r
D1.3 OPTICAL CONSTANTS

The optical-constant data for MgO up until 1991 have been discussed and presented in
graphical form by Roessler and Huffman [7].
The static dielectric constant for MgO obtained from the capacitance measurements
is £,-9.9 [4], while the high-frequency dielectric constant recently derived from the IR
data analysis is £~=3.3 [8]. The large difference in the lOs and £~ values reflects the fact
that this material is highly ionic.
The IR properties of MgO have been determined in the frequency range 25-800 cm- I
at temperatures between 20 and 295 K [8]. The sample used was a commercial
(lOO)MgO crystal. The measured IR data were analyzed using the classical oscillator
model, and the resultant (n, k) values were listed in tabular form for a few selected
temperatures, 20, 60,100,150, and 295 K, and frequencies between 30-350 cm-I •
Vedam and Kim [9] used SE to determine the neE) dispersion and thickness of the
MgO film deposited on a vitreous silica substrate. The obtained n data were expressed
by the well-known Sellmeier dispersion equation. The n data agreed with earlier report
[10] within Lln=0.0044 (A=250-900 nm).
D1 MAGNESIUM OXIDE (MgO) 413
The reflectivity spectra at the fundamental absorption edge of MgO have been
measured up to 1800 K using a newly developed vacuum-UV spectrometer [6]. At this
temperature, the r -exciton peak is found to shift 1.4 eV to lower energies at a rate of -
0.92 meV/K, to broaden and to decrease in amplitude. The results of this experiment
are shown in Fig. DI-2 (T=292-1573 K) [6].
18
292K
327K
16
14
~ 12
~
a:
10
9 8 7 6 5
E (eV)
Figure Dl-2 Fundamental reflectivity spectra at the rW-~r15 exciton region of MgO at tem-
peratures between 292 and 1573 K. (From French [6].)
The optical constants in the near-IR-far-UV region of MgO have been modeled by
Chen et al. [11]. The simple Lorentzian functions are used as the optical-dispersion
expressions in this modeling. The I-sum rules are properly taken into consideration.
The theoretical results are in good agreement with the experimental data compiled by
Roessler and Huffman [7].
The room-temperature values of (£1' £z), (n, k), a, and R listed in Table Dl-1 were
taken from Cunsolo et ai. [8] for E:::;0.0434 eV, from Roessler and Huffman [7] for
0.0459s;E:::;0.5332 eV and 5s;E:::;75 eV, and from Vedam and Kim [9] for 1.38s;E:::;4.96
eV.
The (£1' £Z), (n, k), a, and R values in Table Dl-l are plotted in Figs. D1-3-D1-5,
respectively.
REFERENCES
1. R. Huang,!. Electron. Mater. 22, 215 (1993).
2. E. J. Tarsa, M. De Graef, D. R. Clarke, A. C. Gossard, and J. S. Speck, J. Appl.
Phys. 73, 3276 (1993).
3. U. Schonberger and F. Aryasetiawan, Phys. Rev. B 52, 8788 (1995).
by K.-H. Hellwege and O. Madelung, Landolt-Bornstein, New Series, Group III,
Vol. 17, Pt. b (Springer, Berlin, 1982).
5. W. Y. Ching, F. Gan, and M.-Z. Huang, Phys. Rev. B 52, 1596 (1995).
6. R. H. French, Phys. Scripta. 41, 404 (1990).
7. D. M. Roessler and D. R. Huffman, in Handbook of Optical Constants of Solids I/,
8 S. Cunsolo, P. Dore, S. Lupi, P. Maselli, and C. P. Varsamis, Infrared Phys. 33,
539 (1992).
9. K. Vedam and S. Y. Kim, Appl. Opt. 28, 2691 (1989).
10. R. E. Stephens and I. H. Malitson, J. Res. Natl. Bur. Stand. 49, 249 (1952).
11. Y. F. Chen, C. M. Kwei, and C. J. Tung, Phys. Rev. B 48,4373 (1993).
8 MgO
w 4
10 20
Photon energy (eV)
Figure DI-3 £1(£) and £2(£) spectra for MgO at 300 K.

3.5
3.0 MgO
2.5
.x: 2.0
c
1.5
1.0
0.5
0 10 20
Photon energy (eV)
Figure Dl-4 nee) and k(E) spectra for MgO at 300 K.
107
(a)
.:=-- 106
-§
I
105
~
104 MgO
103
0.3
a: 0.2
0.1
0 10 20
Photon energy (eV)
Figure Dl·5 (a) af...E) and (b) R(E) spectra for MgO at 300 K.
416 IT-VI SEMICONDUCTORS
Table Dl-l Optical constants of MgO at 300 K.

eV 101 102 n k IX (em· l ) R
0.0037 10.56 0.Q15 3.25 2.31E-03 8.71E-01 0.280
0.0043 10.30 0.019 3.21 2.94E-03 1.29E+00 0.276
0.005 10.05 0.021 3.17 3.35E-03 1.68E+OO 0.271
0.0056 9.86 0.023 3.14 3.72E-03 2.10E+00 0.267
0.0062 9.86 0.023 3.14 3.67E-03 2.3IE+00 0.267
0.0068 9.86 0.023 3.14 3.60E-03 2.49E+00 0.267
0.0074 9.99 0.022 3.16 3.53E-03 2.66E+00 0.270
0.0081 10.11 0.Q25 3.18 3.92E-03 3.20E+00 0.272
0.0087 10.24 0.028 3.20 4.41E-03 3.88E+OO 0.274
0.0093 10.37 0.032 3.22 4.93E-03 4.65E+00 0.277
0.0099 10.43 0.037 3.23 5.73E-03 5.76E+OO 0.278
0.0105 10.50 0.052 3.24 7.98E-03 8.52E+00 0.279
0.0112 10.50 0.097 3.24 1.50E-02 1.70E+01 0.279
0.0118 10.50 0.164 3.24 2.53E-02 3.02E+01 0.279
0.0124 10.50 0.245 3.24 3.78E-02 4.75E+01 0.279
0.013 10.37 0.317 3.22 4.92E-02 6.49E+01 0.277
0.0136 10.37 0.278 3.22 4.32E-02 5.97E+01 0.277
0.0143 10.37 0.240 3.22 3.73E-02 5.39E+01 0.277
0.0149 10.37 0.221 3.22 3.43E-02 5.17E+01 0.277
0.0155 10.30 0.215 3.21 3.35E-02 5.26E+01 0.276
0.0161 10.37 0.209 3.22 3.24E-02 5.29E+01 0.277
0.0167 10.37 0.211 3.22 3.28E-02 5.56E+01 0.277
0.0174 10.37 0.205 3.22 3.18E-02 5.59E+01 0.277
0.Q18 10.50 0.204 3.24 3.15E-02 5.74E+01 0.279
0.0186 10.63 0.205 3.26 3.14E-02 5.92E+01 0.281
0.0192 10.76 0.187 3.28 2.85E-02 5.55E+01 0.284
0.0198 10.82 0.171 3.29 2.60E-02 5.23E+01 0.285
0.Q205 10.89 0.183 3.30 2.78E-02 5.76E+01 0.286
0.0211 10.96 0.191 3.31 2.88E-02 6.15E+01 0.287
0.0217 11.15 0.177 3.34 2.65E-02 5.83E+01 0.291
0.0223 11.42 0.170 3.38 2.51E-02 5.68E+01 0.295
0.0229 11.49 0.166 3.39 2.45E-02 5.70E+01 0.296
0.0236 11.63 0.164 3.41 2.40E-02 5.73E+01 0.299
0.0242 11.76 0.166 3.43 2.42E-02 5.93E+01 0.301
0.0248 11.90 0.157 3.45 2.28E-02 5.73E+01 0.303
0.0254 12.18 0.156 3.49 2.23E-02 5.74E+01 0.308
0.026 12.32 0.156 3.51 2.22E-02 5.86E+01 0.310
0.0266 12.53 0.155 3.54 2. 19E-02 5.92E+01 0.313
0.0273 12.67 0.157 3.56 2.2IE-02 6. llE+Ol 0.315
0.0279 12.89 0.162 3.59 2.25E-02 6.36E+01 0.318
0.0285 13.03 0.166 3.61 2.30E-02 6.65E+Ol 0.321
0.0291 13.25 0.173 3.64 2.37E-02 7.ooE+01 0.324
0.0297 13.47 0.179 3.67 2.44E-02 7.36E+Ol 0.327
0.0304 13.69 0.186 3.70 2.52E-02 7.76E+01 0.330
0.031 13.99 0.195 3.74 2.61E-02 8.20E+Ol 0.334
0.0316 14.21 0.210 3.77 2.78E-02 8.9IE+01 0.337
0.0322 14.52 0.227 3.81 2.98E-02 9.74E+Ol 0.341
0.0328 14.82 0.248 3.85 3.22E-02 1.07E+02 0.345
0.0335 15.13 0.272 3.89 3.49E-02 1.18E+02 0.349
0.0341 15.44 0.298 3.93 3.79E-02 1.31E+02 0.353
Table Dl-I Continued (MgO).

eV E! 102 n k a (em'!) R
0.0347 15.84 0.327 3.98 4.11E-02 1.45E+02 0.358
0.0353 16.24 0.356 4.03 4.42E-02 1.58E+02 0.363
0.0359 16.64 0.382 4.08 4.68E-02 1.71E+02 0.368
0.0366 17.14 0.405 4.14 4.89E-02 1.8IE+02 0.373
0.0372 17.64 0.422 4.20 5.02E-02 1.89E+02 0.379
0.0378 18.23 0.444 4.27 5.20E-02 1.99E+02 0.385
0.0384 18.83 0.488 4.34 5.62E-02 2. 19E+02 0.391
0.039 11.69 0.417 3.42 6.09E-02 2.4IE+02 0.300
0.0397 20.34 0.603 4.51 6.69E-02 2.69E+02 0.406
0.0403 21.43 0.718 4.63 7.75E-02 3.17E+02 0.416
0.0409 22.46 0.873 4.74 9.21E-02 3.82E+02 0.425
0.0415 24.09 1.178 4.91 0.120 5.05E+02 0.438
0.0421 25.81 0.175 5.08 1.72E-02 7.35E+01 0.450
0.0428 27.68 3.151 5.27 0.299 1.30E+03 0.465
0.0434 29.94 3.233 5.48 0.295 1.30E+03 0.479
0.0459 55.04 8.333 7.44 0.56 2.61E+03 0.584
0.0471 85.08 18.93 9.28 1.02 4.87E+03 0.652
0.0484 165.8 109.6 13.5 4.06 1.99E+04 0.762
0.04% -205.5 153.5 5.05 15.20 7.64E+04 0.925
0.0508 -79.44 18.12 1.01 8.97 4.62E+04 0.952
0.0521 -46.76 7.45 0.543 6.86 3.62E+04 0.956
0.0533 -32.47 4.13 0.362 5.71 3.09E+04 0.958
0.0558 -19.23 1.82 0.207 4.39 2.48E+04 0.960
0.0583 -12.94 1.07 0.148 3.60 2.13E+04 0.959
0.0608 -9.349 0.73 0.119 3.06 1.89E+04 0.955
0.0632 -6.959 0.54 0.102 2.64 1.69E+04 0.950
0.067 -4.657 0.39 0.091 2.16 1.47E+04 0.938
0.707 -3.161 0.31 0.086 1.78 1.28E+05 0.921
0.0744 -2.093 0.28 0.098 1.45 1.09E+04 0.882
0.0781 -1.351 0.32 0.135 1.17 9.26E+03 0.797
0.0843 -0.601 0.21 0.136 0.787 6.73E+03 0.715
0.0905 0.042 0.092 0.267 0.172 1.58E+03 0.347
0.0979 0.608 0.037 0.780 2.36E-02 2.34E+02 0.Q15
0.1029 0.900 0.032 0.949 1.71E-02 1.78E+02 0.0008
0.1079 1.138 0.042 1.067 1.%E-02 2. 14E+02 0.0011
0.1513 2.146 0.00080 1.465 2.73E-04 4. 19E+OO 0.036
0.2008 2.524 1.5887 0.052
0.2604 2.706 1.645 0.059
0.31 2.782 1.6679 0.063
0.4133 2.861 1.6915 0.066
0.5332 2.902 1.7035 0.068
1.38 2.971 1.7236 0.071
1.46 2.974 1.7246 0.071
1.55 2.979 1.7259 0.071
1.65 2.984 1.7275 0.071
1.77 2.991 1.7294 0.071
1.91 2.999 1.7318 0.072
2.07 3.010 1.7348 0.072
2.25 3.023 1.7388 0.073
2.48 3.042 1.7440 0.074
Table 01·1 Continued (MgO).

eV £1 £2 n k a (em-I) R
2.76 3.067 1.7513 0.075
3.1 3.104 1.7618 0.076
3.54 3.161 1.7778 0.D78
4.13 3.255 1.8042 0.082
4.96 3.435 1.8534 0.089
5 3.452 1.858 0.090
5.5 3.614 1.901 0.096
6 3.834 1.958 0.105
6.5 4.158 2.039 0.117
7 4.735 2.176 0.137
7.4 6.220 0.010 2.494 0.002 1.50E+03 0.183
7.45 6.775 0.094 2.603 0.018 1.36E+04 0.198
7.48 7.294 0.211 2.701 0.039 2.96E+04 0.211
7.5 7.795 0.425 2.793 0.076 5.78E+04 0.224
7.52 8.341 0.862 2.892 0.149 1.14E+05 0.237
7.54 8.920 1.631 2.999 0.272 2.08E+05 0.253
7.56 9.145 2.902 3.061 0.474 3.63E+05 0.268
7.58 8.459 4.257 2.994 0.711 5.46E+05 0.272
7.6 7.310 4.917 2.839 0.866 6.67E+05 0.267
7.62 6.211 5.032 2.665 0.944 7.29E+05 0.256
7.64 5.364 4.676 2.498 0.936 7.25E+05 0.238
7.66 4.924 4.229 2.389 0.885 6.87E+05 0.221
7.68 4.691 3.961 2.327 0.851 6.63E+05 0.211
7.7 4.492 3.691 2.270 0.813 6.35E+05 0.200
7.8 4.122 2.776 2.132 0.651 5.15E+05 0.167
7.9 4.255 2.385 2.137 0.558 4.47E+05 0.158
8 4.359 2.283 2.154 0.530 4.30E+05 0.158
9 4.076 2.893 2.130 0.679 6.20E+05 0.169
10 3.496 3.574 2.061 0.867 8.79E+05 0.185
10.5 2.912 4.162 1.999 1.041 1.1IE+06 0.207
11 1.502 4.261 1.735 1.228 1.37E+06 0.228
11.5 0.880 2.742 1.371 1.000 1.17E+06 0.172
12 1.864 2.394 1.565 0.765 9.31E+05 0.126
12.5 2.233 2.957 1.723 0.858 1.09E+06 0.154
13 1.874 4.097 1.786 1.147 1.5IE+06 0.213
13.3 0.212 4.582 1.549 1.479 1.99E+06 0.287
13.4 -0.383 4.141 1.374 1.507 2.05E+06 0.305
13.5 -0.745 3.504 1.191 1.471 2.01E+06 0.316
13.6 -0.712 2.846 1.054 1.350 1.86E+06 0.302
13.7 -0.523 2.387 0.980 1.218 1.69E+06 0.275
13.8 -0.201 2.152 0.990 1.087 1.52E+06 0.230
13.9 0.058 2.034 1.023 0.994 1.40E+06 0.195
14 0.237 2.017 1.065 0.947 1.34E+06 0.175
14.5 0.508 1.935 1.120 0.864 1.27E+06 0.145
15 0.608 1.929 1.147 0.841 1.28E+06 0.137
16 0.950 1.758 1.214 0.724 1.17E+06 0.105
17 0.538 2.484 1.241 1.001 1.73E+06 0.176
18 -0.150 1.938 0.947 1.023 1.87E+06 0.217
19 -0.226 1.483 0.798 0.929 1.79E+06 0.221
20 -0.166 0.951 0.632 0.752 1.52E+06 0.217
Table 01·1 Continued (MgO).

eV £! £2 n k ex (em'!) R
21 -0.162 0.848 0.592 0.716 1.52E+06 0.223
22 0.067 0.493 0.531 0.464 1.03E+06 0.170
24 0.364 0.426 0.680 0.313 7.62E+05 0.069
26 0.489 0.272 0.724 0.188 4.96E+05 0.037
28 0.669 0.236 0.830 0.142 4.03E+05 0.015
30 0.767 0.252 0.887 0.142 4.32E+05 0.0092
32 0.806 0.303 0.913 0.166 5.39E+05 0.010
34 0.786 0.298 0.902 0.165 5.69E+05 0.010
36 0.807 0.255 0.909 0.140 5. llE+05 0.0076
38 0.820 0.243 0.915 0.133 5. 12E+05 0.0068
40 0.822 0.225 0.915 0.123 4.99E+05 0.0061
42 0.843 0.196 0.924 0.106 4.5IE+05 0.0046
44 0.856 0.175 0.930 0.094 4. 19E+05 0.0037
46 0.881 0.170 0.943 0.090 4.20E+05 0.0030
48 0.905 0.162 0.955 0.085 4. 14E+05 0.0024
50 0.920 0.162 0.963 0.084 4.26E+05 0.0022
55 0.918 0.202 0.964 0.105 5.85E+05 0.0032
60 0.875 0.133 0.938 0.071 4.32E+05 0.0024
65 0.920 0.140 0.962 0.073 4.81E+05 0.0018
70 0.901 0.141 0.952 0.074 5.25E+05 0.0020
75 0.900 0.133 0.951 0.070 5.32E+05 0.0019
D2 ZINC OXIDE
(ZnO)
D2.1 GENERAL REMARKS

Zinc oxide (ZnO) is a compound crystallizing in the wurtzite structure, and has a wide
band gap -3.4 eV at 300 K. It has been used extensively as a photoconducting and
fluorescent material, being effective in the visible-to-UV spectral region. The excel-
lent optical, piezoelectric, and acoustooptic properties of a thin Zno film also make it
possible to fabricate solar cell windows [1], gas sensors [2], surface acoustic wave de-
vices [3], and integrated acoustooptic devices [4]. Optically pumped lasing from ZnO
platelets have also been observed at very low pump power (-4 W/cm2) [5].
D2.2 ELECTRONIC ENERGY-BAND STRUCTURE

There are many theoretical works dealing with the electronic energy-band structure of
ZnO (for recent studies, see Refs. [6-8]). We reproduce in Fig. D2-1 the energy-band
structure of ZnO as calculated with the semiempirical tight-binding scheme by Koba-
yashi et at. [9].
ZnO has a direct band gap (r7~r7' double-group notation) of 3.4376 eV at 1.6 K
[10]. The conduction band is s-like, having r7 symmetry. The valence band is p-like,
splitting into three doubly degenerate bands with quantum numbers 1,=1/2 [r7 (A)], 3/2
[r9 (B)] and 1/2 [r7 (C)] due to the SO and crystal field interactions. For convenience,
the denotations A, Band C are generally used for these three valence bands. It should
be noted that in CdS (CdSe) the A valence band has r9 symmetry with 1,=3/2, while B
and C have r7 symmetry with 1,=1/2. The crystal field parameter L\cr and SO parameter
L\so for ZnO recently determined by Mang et at. [11] are 39.4±O.2 meV and -3.5±O.2
me V, respectively. Due to the negative L\so value, the ordering of the two highest-
valence-band states (A and B) in ZnO is reversed as compared with other II-VI
wurtzite semiconductors.
The fundamental reflectivity of ZnO [12,13] showed the presence of CP structures at
-9, 11, 12.5, 13 (14), and 15 eV. A weak peak at 7 eV has also been found in Ref. [13].
Such reflectivity peaks are considered to occur at several points in the BZ and related
to d-band-related transitions [13].

The room-temperature values of the static and high-frequency dielectric constants of
420
D2 ZINC OXIDE (ZnO) 421
ZnO
25~----~--~-----.--.------.---,------,
5C
-10
-15
3'V
-20p---t-+=::::::::::::=i~+----r-1~::::::::::1
IV
-25A R L UM L r 6 ASH P K T r
+
WAVE VECTOR k
Figure D2·1 Electronic energy-band structure of ZnO as calculated with the semiempirical
tight-binding scheme. (From Kobayashi et al. [9].)
ZnO were reported to be £,=8.1 and £~=3.95 for E.le and £,=9.0 and £~=4.05 for Elle
[14]. They were obtained by analyzing the dispersion spectra of IR reflection. The
high-frequency dielectric constant was also determined from an extrapolation of the
published n data (Bond, Ref. [15]) by Heltemes and Swinney [16] to be £~=3.70 (E.le)
and £~=3.75 (Elle).
Optical properties in the reststrahlen region of ZnO have been studied by Heltemes
and Swinney [16] and more recently by Venger et al. [14]. The reststrahlen parameters
obtained by these authors are: ffi TO=406 cm-!, ffiLO=589 cm-!, £,=7.8, £~=3.70, and '(=7.5
cm-! for E.le (ffi TO=377 cm-!, ffiLO=575 cm-!, 10,=8.75, E~=3.75, and '(=12.0 cm-! for EIIc)
[16]; ffiTo=412 cm-!, ffiLO=591 cm-!, £,=8.1, £~=3.95, and '(=11 cm-! for E.lc (ffiTO=380
cm-I, ffiLO=570 cm-!, £,=9.0, E~=4.05, and '(=11 cm-! for Elle) [14]. An additive weak
vibration band was observed in Ref. [14] at 504 cm- l for both E.le and Elle; although
the nature of this band requires further investigations, the presence of mechanical stress
in the crystal is considered to be one of the reasons. There also exist regions in the R
spectra where it was not possible to model them within the framework of the one-
oscillator model [14,16]. These regions can be seen in the lower energy part of the
main reststrahlen band for E.le and Elic. They are found to be dependent on the quality
of the sample treatment and are connected with the thin distributed layer near the sam-
ple surface [14]. Optical absorption in the multiphonon absorption band region of Li-
doped Zno has also been studied [17].
The n(E) dispersion data in the transparent region of Zno have been reported by
several authors [15,18,19]. The experimental techniques used were the method of prism
minimum deviation [15] and transmittance interference spacing [19]. The data in Ref.
[19] showed the natural birefringence, i.e., ~=n.(Elle)-no(E.le):#O; its sign is positive
for longer wavelength and becomes negative when approaching the exciton absorption.
The isotropic point ~=O occurred at 3966 A at 300 K, at 3930 A at 77 K, and at 3928
A at 4.2 K. Geidur and Yaskov [20] calculated the n(E) dispersion, natural birefrin-
gence, and piezobirefringence of some wurtzite-type semiconductors, including ZnO,
in the region near the fundamental absorption edge. The hydrostatic-pressure depen-
dence of n at A=5893 Ahas also been determined for some hexagonal crystals, includ-
ing Zno, by an interferometric technique for pressures up to 0.7 GPa [21].
The reflection and transmission spectra near the exciton and excitonic polariton
resonance of ZnO have been reported and compared with the valence-band structure of
wurtzite-type crystals [10,22-7]. Two-photon absorption spectroscopy has also been
used recently to determine the exciton parameters as a function of hydrostatic pressure
in nearly the complete stability range of the wurtzite phase [11].
The fundamental reflectivity spectra in the interband transition region of ZnO have
been measured by Freeouf [12], Klucker et al. [13], and Hengehold et al. [28]. By per-
forming the KK analysis, the (~\,~) values were extracted in the 1-2S-eV region [12],
in the 2-25-eV region [13], and in the 3-24-eV region [28]. No polarized incident light
was used in Ref. [28]. It should be noted, however, that there is no quantitative agree-
ment between these results; e.g., the ~ value at the 12.S-eV peak is 4.4 in Ref. [12] but
is 2.8 in Ref. [13].
The optical constants for ZnO have been measured using SE by Matz and Liith [29]
in the l.S-4.0-eV spectral region and by Adachi and coworker [30] in the 1.5-S.0-eV
region at room temperature. The bulk ZnO single crystals used in these studies were
grown by a vapor-phase method, not intentionally doped, and their surfaces were ori-
ented parallel to the e axis. Because of the optical anisotropy of wurtzite-type crystals,
at least two independent measurements at each wavelength are necessary to determine
the two sets of optical constants, (no' kJ and (n., k.), for E.le and Elle, respectively. The
surface orientations, parallel to the e axis, enabled such measurements. More recently,
Washington et al. [31] have determine e(E) for E.le of Zno films grown on (0001)
sapphire substrates using SE in the 1.33-4.96-eV region at room temperature. Below
the band gap, the data were analyzed by the frrst-order SeIlmeier dispersion equation.
ZnO (EJ..c) Zno (E II c)

2.4
. SEdata
2.4
• SE data
. Bond Bond
0 o
Mollwo • Mollwo
~ 2.2 -Caleu. ;:; 2.2 -Caleu.
(a)
1 1.5 2 2.5 3 3.5 1 1.5 2 2.5 3 3.5

Figure D2-2 n(E) spectra of Zno for (a) El.c and (b) Elle measured by SE near the Eo-exciton
absorption at 300 K. The open circles and triangles represent the experimental data taken from
Bond [15] and Mollwo [18]. The solid lines indicate the results of Eq. (D2.1) fitted to the ex-
perimental data. (From Yoshikawa and Adachi [30].)
Figure D2-2 shows the experimental n(E) dispersion of Zno for (a) El.e and (b) Elle
determined by SE near the Eo-exciton absorption [30]. The open circles and triangles
represent the experimental data taken from Bond [15] and Mollwo [18]. These data
were analyzed using the first-order Sellmeier equation:
2 Bf!
n(A) =A+-- (D2.l)
f!-C
where A, B and C are the fitting parameters and A is in J.lID. The solid lines in Fig. D2-2
indicate the results of Eq. (D2.1) fitted to the experimental data. The numeric values
fit-determined were: A=2.84, B=O.84, and C=O.lDl J.lm2 for El.e; A=2.85, B=O.87, and
C=0.096 J.lm2 for Elle.
We list in Tables D2-1 and D2-2 the room-temperature values of e=el+i~, n*=n+ik,
a., and R for Zno for El.e and Elle, respectively. A set of the optical constants for
E'5.0.2 eV were calculated using the reststrahlen parameters ofVenger et al. [14]. The n
(e) values below the Eo-exciton absorption edge (0.31'5.£'5.2.75 eV) were taken from
Bond [15]. A set of the optical constants in the interband transition region (£>2.75 eV)
were taken from Freeouf [12].
The (£)' ~), (n, k), a., and R values in Tables D2-1 and D2-2 are plotted in Figs. D2-
3-D2-5, respectively.
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7
6 ZnO (a) Elc
5
4
W 3
2
1
o
-1 :=::=:::=:=::=::=:::=~
5 10 15 20
Photon energy (eV)
Figure D2-3 £)(E) and q(E) spectra for Zno at 300 K.
Photon energy (eV)

Figure D2-4 neE) and k(E) spectra for Zno at 300 K.
106 0.4
.-...
'I 105 0.3
E a:
0
......... 104 0.2
e:l
0.1
103
106 0.4
f"'
E
105 0.3
a:
0
......... 104 0.2
e:l
0.1
103
0 5 10 15 20
Photon energy (eV)
Figure D2·5 a(E) and R(E) spectra for ZnO at 300 K.
Table D2·1 Optical constants ofZnO for E.1.c at 300 K.

eV £1 £2 n k a (cm'l) R
0.01 8.265 0.023 2.875 0.00408 4. 14E+00 0.234
0.02 8.851 0.061 2.975 0.01017 2.06E+01 0.247
0.03 10.28 0.152 3.207 0.02365 7.19E+01 0.275
0.04 14.66 0.579 3.829 0.07565 3.07E+02 0.343
0.042 16.72 0.866 4.090 0.10591 4.51E+02 0.369
0.044 19.93 1.427 4.467 0.15971 7.12E+02 0.403
0.046 25.60 2.761 5.067 0.27241 1.27E+03 0.450
0.047 30.40 4.249 5.527 0.38442 1.83E+03 0.483
0.048 37.99 7.330 6.192 0.59195 2.88E+03 0.524
0.049 51.32 15.30 7.242 1.05632 5.25E+03 0.580
0.0495 61.97 24.84 8.023 1.54822 7.77E+03 0.617
0.05 75.64 45.30 9.050 2.50296 1.27E+04 0.663
0.0505 81.31 92.43 10.110 4.57133 2.34E+04 0.720
0.05075 63.92 128.4 10.182 6.30526 3.24E+04 0.753
0.051 19.20 154.1 9.341 8.25005 4.27E+04 0.786
0.05105 7.917 155.4 9.042 8.59281 4.45E+04 0.793
0.0511 -3.460 155.0 8.705 8.90172 4.6IE+04 0.799
0.05115 -14.57 152.9 8.339 9.17065 4.76E+04 0.805
0.0512 -25.07 149.4 7.950 9.39565 4.88E+04 0.811
0.05125 -34.70 144.5 7.548 9.57482 4.97E+04 0.817
0.0515 -65.65 110.1 5.594 9.84589 5.14E+04 0.841
0.052 -68.97 53.79 3.041 8.84409 4.66E+04 0.871
0.0525 -55.22 28.55 1.863 7.66110 4.08E+04 0.889
Table D2·1 Continued (ZnD, E.J..c).

eV £\ q n k a (cm'\) R
0.053 -43.71 17.12 1.272 6.73251 3.62E+04 0.899
0.054 -29.28 7.940 0.727 5.45952 2.99E+04 0.911
0.055 -21.18 4.519 0.488 4.62840 2.58E+04 0.917
0.056 -16.12 2.902 0.360 4.03148 2.29E+04 0.920
0.057 -12.69 2.017 0.282 3.57297 2.06E+04 0.922
0.058 -10.21 1.481 0.231 3.20344 1.88E+04 0.922
0.059 -8.341 1.132 0.196 2.89471 1.73E+04 0.920
0.06 -6.885 0.893 0.170 2.62942 1.60E+04 0.918
0.07 -0.764 0.196 0.111 0.88087 6.25E+03 0.778
0.08 1.098 0.082 1.049 0.03911 3.17E+02 0.001
0.09 1.980 0.044 1.407 0.01563 1.43E+02 0.029
0.1 2.486 0.027 1.577 0.00856 8.68E+Ol 0.050
0.2 3.661 0.0021 1.913 0.00055 1.12E+Ol 0.098
0.31 3.5687 1.8891 0.095
0.33 3.5963 1.8964 0.096
0.34 3.6077 1.8994 0.096
0.36 3.6184 1.9022 0.097
0.39 3.6286 1.9049 0.097
0.41 3.6386 1.9075 0.097
0.44 3.6481 1.9100 0.098
0.48 3.6588 1.9128 0.098
0.52 3.6680 1.9152 0.099
0.56 3.6760 1.9173 0.099
0.62 3.6852 1.9197 0.099
0.69 3.6964 1.9226 0.100
0.77 3.7083 1.9257 0.100
0.89 3.7241 1.9298 0.101
1.03 3.7458 1.9354 0.102
1.24 3.7772 1.9435 0.103
1.38 3.7998 1.9493 0.104
1.55 3.8404 1.9597 0.105
1.77 3.8947 1.9735 0.107
2.07 3.9940 1.9985 0.111
2.48 4.2070 2.0511 0.119
2.75 4.4344 2.1058 0.127
2.85 4.47 2.12 0.13
2.9 4.59 2.14 0.13
2.95 4.71 0.01 2.17 0.003 9.2E+02 0.14
3 4.84 0.03 2.20 0.006 1.8E+03 0.14
3.05 5.00 0.04 2.24 0.009 2.6E+03 0.15
3.1 5.18 0.06 2.28 0.013 4.1E+03 0.15
3.15 5.35 0.12 2.31 0.026 8.4E+03 0.16
3.2 5.93 0.53 2.44 0.11 3.5E+04 0.18
3.25 6.53 1.38 2.57 0.27 8.8E+04 0.20
3.3 5.09 2.33 2.31 0.50 1.7E+05 0.18
3.33 4.77 2.62 2.26 0.58 2.0E+05 0.18
3.35 4.55 2.57 2.21 0.58 2.0E+05 0.17
3.4 4.20 2.33 2.12 0.55 1.9E+05 0.16
3.5 4.08 2.03 2.08 0.49 1.7E+05 0.14
3.6 3.99 1.91 2.05 0.46 1.7E+05 0.14
Table D2·1 Continued (2nO, E.lc).

eV 101 102 n k a (em- 1) R
3.7 3.85 1.84 2.01 0.46 1.7E+05 0.13
3.8 3.79 1.77 2.00 0.44 1.7E+05 0.13
3.9 3.72 1.70 1.98 0.43 1.7E+05 0.13
4 3.68 1.68 1.96 0.43 1.7E+05 0.12
4.5 3.46 1.56 1.90 0.41 1.9E+05 0.11
5 3.20 1.49 1.83 0.41 2.1E+05 0.11
6 3.0 1.3 1.77 0.37 2.2E+05 0.09
7 3.0 1.5 1.78 0.42 3.0E+05 0.10
8 3.1 1.9 1.84 0.52 4.2E+05 0.12
8.75 2.9 2.5 1.83 0.68 6.0E+05 0.14
9 2.4 2.5 1.71 0.72 6.6E+05 0.13
10 2.5 1.8 1.67 0.55 5.6E+05 0.10
11 3.0 2.6 1.86 0.69 7.6E+05 0.14
12 2.8 4.2 1.98 1.06 1.3E+06 0.21
12.5 1.4 4.4 1.73 1.27 1.6E+06 0.24
13 0.6 3.7 1.48 1.26 1.7E+06 0.24
14 0.0 3.4 1.30 1.30 1.8E+06 0.25
15 -1.0 3.1 1.05 1.45 2.2E+06 0.33
16 -1.0 1.9 0.75 1.25 2.0E+06 0.35
17 -0.9 1.3 0.57 1.11 1.9E+06 0.38
18 -0.4 1.0 0.59 0.87 1.6E+06 0.28
19 0.0 0.8 0.64 0.64 1.2E+06 0.17
20 0.0 0.7 0.61 0.61 1.2E+06 0.18
Table D2·2 Optical constants of2nO for EI/c at 300 K.

eV 101 102 n k a (em- 1) R
0.01 9.233 0.033 3.039 0.00549 5.57E+00 0.255
0.02 10.09 0.091 3.176 0.01425 2.89E+01 0.272
0.03 12.37 0.258 3.517 0.03669 1.12E+02 0.311
0.04 21.67 1.554 4.658 0.16676 6.76E+02 0.418
0.042 27.83 2.997 5.283 0.28359 1.2IE+03 0.466
0.044 41.24 7.899 6.451 0.61217 2.73E+03 0.538
0.045 55.62 16.35 7.536 1.08481 4.95E+03 0.593
0.0455 67.09 26.38 8.342 1.58103 7.29E+03 0.628
0.046 82.00 47.70 9.404 2.53595 1.18E+04 0.672
0.0465 90.04 96.91 10.543 4.59594 2.17E+04 0.727
0.04675 74.32 136.0 10.707 6.34964 3.01E+04 0.759
0.047 28.92 167.7 9.977 8.40347 4.00E+04 0.791
0.0471 4.300 171.0 9.364 9.13118 4.36E+04 0.804
0.04715 -8.158 169.9 9.000 9.44190 4.51E+04 0.810
0.0472 -20.19 167.1 8.607 9.70912 4.65E+04 0.815
0.04725 -31.46 162.7 8.194 9.92932 4.76E+04 0.821
0.0475 -69.72 126.6 6.115 10.34937 4.98E+04 0.845
0.04775 -80.16 89.06 4.453 9.99932 4.84E+04 0.863
0.048 -76.94 62.00 3.307 9.37411 4.56E+04 0.876
0.0485 -61.93 32.62 2.008 8.12171 3.99E+04 0.893
0.049 -49.01 19.43 1.362 7.13216 3.54E+04 0.903
0.05 -32.80 8.924 0.772 5.77897 2.93E+04 0.915
Table D2-2 Continued (2nD, Bile).

eV El E2 n k a (em-I) R
0.052 -18.10 3.234 0.379 4.27088 2.25E+04 0.925
0.054 -11.52 1.644 0.242 3.40281 1.86E+04 0.926
0.056 -7.837 0.989 0.176 2.80497 1.59E+04 0.924
0.058 -5.491 0.659 0.140 2.34755 1.38E+04 0.918
0.06 -3.871 0.469 0.119 1.97115 1.2OE+04 0.907
0.07 -0.040 0.146 0.235 0.30916 2.19E+03 0.419
0.08 1.426 0.068 1.194 0.02866 2.32E+02 0.008
0.09 2.184 0.039 1.478 0.01317 1.2OE+02 0.037
0.1 2.639 0.025 1.625 0.00761 7.71E+01 0.057
0.2 3.759 0.0021 1.939 0.00054 1.10E+01 0.102
0.31 3.6359 1.9068 0.097
0.33 3.6485 1.9101 0.098
0.34 3.6584 1.9127 0.098
0.36 3.6711 1.9160 0.099
0.39 3.6822 1.9189 0.099
0.41 3.6918 1.9214 0.099
0.44 3.7060 1.9251 0.100
0.48 3.7114 1.9265 0.100
0.52 3.7237 1.9297 0.101
0.56 3.7299 1.9313 0.101
0.62 3.7365 1.9330 0.101
0.69 3.7520 1.9370 0.102
0.77 3.7644 1.9402 0.102
0.89 3.7749 1.9429 0.103
1.03 3.8025 1.9500 0.104
1.24 3.8373 1.9589 0.105
1.38 3.8628 1.9654 0.106
1.55 3.9014 1.9752 0.107
1.77 3.9589 1.9897 0.110
2.07 4.0590 2.0147 0.113
2.48 4.2770 2.0681 0.121
2.75 4.5076 2.1231 0.129
2.95 4.53 2.13 0.13
3 4.64 2.15 0.13
3.05 4.75 2.18 0.14
3.1 4.90 om 2.21 0.002 6.3E+02 0.14
3.15 5.11 0.02 2.26 0.005 1.7E+03 0.15
3.2 5.37 0.05 2.32 0.011 3.5E+03 0.16
3.25 5.64 0.08 2.37 0.016 5.3E+03 0.17
3.3 6.39 0.52 2.53 0.10 3.5E+04 0.19
3.35 5.61 1.47 2.39 0.31 1.0E+05 0.17
3.4 5.01 2.34 2.30 0.51 1.8E+05 0.17
3.45 4.51 2.01 2.17 0.46 1.6E+05 0.15
3.5 4.36 1.85 2.13 0.43 1.5E+05 0.15
3.55 4.24 1.72 2.10 0.41 1.5E+05 0.14
3.6 4.10 1.65 2.06 0.40 1.5E+05 0.14
3.7 4.00 1.52 2.03 0.37 1.4E+05 0.13
3.8 3.92 1.45 2.01 0.36 1.4E+05 0.13
3.9 3.84 1.42 1.99 0.36 1.4E+05 0.12
4 3.78 1.40 1.98 0.35 1.4E+05 0.12
Table D2·2 Continued (ZnO, Elle).

eV £1 £2 n k a (em· l ) R
4.5 3.59 1.30 1.92 0.34 1.5E+05 0.11
5 3.51 1.18 1.90 0.31 1.6E+05 0.11
6 3.6 0.8 1.91 0.22 1.3E+05 0.10
7 3.7 0.9 1.94 0.23 1.7E+05 0.11
8 4.0 1.2 2.02 0.30 2.4E+05 0.12
8.75 3.9 1.9 2.03 0.47 4.1E+05 0.14
9 3.3 2.0 1.89 0.52 4.7E+05 0.12
10 3.2 1.1 1.81 0.30 3.0E+05 0.09
11 4.1 1.9 2.07 0.45 5.0E+05 0.14
11.25 4.0 2.1 2.06 0.51 5.8E+05 0.14
11.5 4.0 1.9 2.05 0.46 5.4E+05 0.14
12 4.4 2.4 2.17 0.55 6.6E+05 0.16
13 4.0 4.3 2.22 0.97 1.3E+06 0.21
14 2.0 5.0 1.92 1.30 1.8E+06 0.25
15 0.1 4.5 1.51 1.48 2.3E+06 0.29
16 -0.7 3.1 1.12 1.40 2.3E+06 0.31
17 -0.5 2.0 0.89 1.14 2.0E+06 0.27
18 -0.1 1.4 0.80 0.86 1.6E+06 0.20
19 0.0 1.2 0.79 0.79 1.5E+06 0.17
20 0.3 1.1 0.85 0.66 1.3E+06 0.12
D3 WURTZITE ZINC SULPHIDE
(a-ZnS)

It is known that, similarly to SiC, zinc sulphide (ZnS) exhibits polytypism [1]. Both
wurtzite (a) and zinc-blende modifications (~) of ZnS were found in natural deposits of
ZnS. a-ZnS is the stable form at high temperature and an inversion temperature of
1I50°C was reported for the hexagonal-to-cubic modification [2]. More than 60
polytypes were identified in ZnS crystals grown at temperatures near 1200°C [3].
a-ZnS is a piezoelectric semiconductor. It possesses a wide fundamental band gap of
-3.8-3.9 eV at 300 K and has been used for photoconducting cells, luminescent de-
vices, and other optoelectronic devices in the visible-to-UV spectral region. Because
of the wurtzite structure, it is optically anisotropic (uniaxial).

The electronic energy-band structure of a-ZnS was investigated theoretically by sever-
al authors (see, e.g., Refs. [4-7]). Figure D3-1 shows the electronic energy-band struc-
ture of a-ZnS as calculated with an ETBT by Kobayashi et at. [4].
The fundamental absorption edge of a-ZnS corresponds to direct transitions from the
highest valence band to the lowest conduction band at the r point (Eo, r6~rl)' Litera-
ture values of Eo for a-ZnS measured at 300 K are 3.78 eV for EJ.e and 3.74 eV for
Elle [8], while the theoretical Eo values are 3.8 eV [4] and 3.92 eV [5].
The CP peaks found in a-ZnS in the higher energy region than Eo can be labeled Ela
(a=A and B). These peaks are observed at -S.8 eV (EI.J and -7.0 eV (E IB ), respec-
tively [9]. The EIA and EIB CPs may be related to transitions at the A and M (L) points
in the BZ, respectively. The theoretically obtained values of these gaps are S.I7 eV [4]
(S.81 eV, Ref. [5]) (A56~A13) and 7.04 eV [4] (7.14 eV, Ref. [S]) (L13~L13)' respec-
tively. The CP peak observed at -9 eV [9] may correspond to transitions at the r point
(r6~r6) [10].

Optical properties in the reststrahlen region of a-ZnS have been studied at 300 K by
Manabe et ai. [11]. The measured reflectance data were analyzed using the classical
oscillator model. No clear difference in the reflection spectra was found for light po-
larizations between EJ.e and E II e. The reststrahlen parameters thus obtained are:
431
15r-____. -__. -____~z~ns~------~--~----~
-10
-15~ ____J __ _L __ _ _ _- L__ ~ ____~~~______~
A R LUM :L rl:lA S
~
HPK T r
WAVE VECTOR k
Figure D3·1 Electronic energy· band structure of a-ZnS as calculated with an ETBT. (From
Kobayashi et al. [4].)
coTO=274 cm-I, coLO=356 cm-1 , "(=4.7 cm-1 , £,=9.6, and £_=5.7 for both Ric and Ellc.
Hattori et al. [12] obtained the static and high-frequency dielectric constants at 2, 80,
and 300 K from the refractive-index data measured in the 1O-100-cm-1 region; however,
the Zns crystals used were of mixed cubic and hexagonal type. The 300-K dielectric
constants obtained by Hattori et al. [12] were £,=8.34 and £_=4.7.
The neE) dispersion in the transparent region of a-ZnS has been determined by sev-
eral authors [13,14J. The measured n values are in reasonable agreement with each
other, and these data showed the positive birefringence, i.e., l:In=ne(Ellc)-noCE.lc»O,
for photon energies below the Eo edge. The natural birefringence in a-ZnS has also
been discussed in more detail by several authors [15-17]. The birefringence,
l1n=ne(Ellc)-n o(E.lc) , and optical band gap vs. hexagonal fraction (hexagonality) for
D3 WURTZITE ZINC SULPHIDE (u-ZnS) 433
some ZnS polytypes were studied by Brafman and Steinberger [15]. The ZnS polytypes
used were vapor-phase grown and were 2H, 3C, 4H, 6H, IOH, etc. This study suggests
that for ZnS polytypes the birefringence and optical band gap are linear functions of the
hexagonality h. The hydrostatic-pressure dependence of the refractive index for several
II-VI hexagonal semiconductors, including a-ZnS, has also been reported by Vedam
and Davis [18] for pressures up to 0.7 OPa.
The Urbach rule in some ZnS polytypes (a-, ~-, and 4H-ZnS) has been studied by
Brada et ai. [19]. Dimmock [20] discussed the optical absorption and reflection spectra
at the Eo-exciton edge of some II-VI semiconductors. In the case of the hexagonal
crystals, the quasi-cubic model was used to deduce the band parameters at the r point
of these semiconductors.
The fundamental reflectivity spectra in the interband transition region of a-ZnS have
been reported by Cardona and Harbeke [8], Freeouf [9], and Baars [10]. The samples
used in these studies were bulk single crystals. By performing the KK analysis, the (n,
k) and (£\, Ez) values were extracted in the 1-11-eV region [8] and in the 1-25-eV re-
gion [9], respectively. We can, however, find no quantitative agreement between these
KK-extracted data. The (n, k) and (10\, Ez) values of evaporated Zns films have also
been reported in the vacuum-UV region from 160 to 2000 A (6.2-77.5 eV) by Hunter
et al. [21]. Note, however, that the films studied were polycrystalline with randomly
oriented crystallites of hexagonal and cubic forms.
Optical properties in the 36-150-eV region of some II-VI compounds, including
ZnS, have been studied by Cardona and Haensel [22]. A sharp doublet associated with
transitions from the 3p core levels of Zn to the conduction bands was observed for ZnS,
ZnSe, and less clearly for ZnTe. Note that the ZnS film used in this study was obtained
by vacuum evaporation on a noncrystalline substrate, and thus it was polycrystalline.
While the polycrystallinity of the samples was not discussed, there should be no essen-
tial difference between zinc-blende and wurtzite spectra.
Tables D3-1 and D3-2 list the 300-K values of £=€\+i~, n+ik, a, and R for ex-ZnS
for El.e and Elle, respectively. A set of the optical constants for E~O.1 eV were calcu-
lated using the reststrahlen parameters of Manabe et al. [11]. They were listed only in
Table D3-1 (El.e). This is because the optical properties in the reststrahlen region of ex-
ZnS showed no strong polarization dependence between El.e and Elle [11]. The n (£\)
values for El.e and Elle below the Eo edge (0.885~~3.443 eV) were taken from Bie-
niewski and Czyzak [14]. A complete set of the optical constants in the interband tran-
sition region (3.5~~26 eV) for El.e and Elle were taken from Freeouf [9]. The imagi-
nary constants, k and ex, for F257 eV were obtained from Cardona and Haensel [22];
since no polarization dependence should exist in this spectral region, we listed these
data only in Table 03-1 (El.e).
The (10\, ~), (n, k), ex, and R values in Tables D3-1 and D3-2 are plotted in Figs. D3-
2-03-4.
REFERENCES
1. W. L. Roth, in Physics and Chemistry of II-VI Compounds, edited by M. Aven
and J. S. Prener (North-Holland, Amsterdam, 1967), p. 117.
2. A. Addamiano and M. Aven, f. Appl. Phys. 31, 36 (1960).
3. I. T. Steinberger and S. Mardi", in II-VI Semiconducting Compounds, edited by D.
G. Thomas (Benjamin, New York, 1967), p. 167.
(1983).
5. M.-Z. Huang and W. Y. Ching,J. Phys. Chem. Solids 46, 977 (1985).
6. P. Schroer, P. Kriiger, and J. Pollmann, Phys. Rev. B 47, 6971 (1993).
8. M. Cardona and G. Harbeke, Phys. Rev. 137, A1467 (1965).
9. J. L. Freeouf, Phys. Rev. B 7, 3810 (1973).
10. J. W. Baars, in II-VI Semiconducting Compounds, edited by D. G. Thomas (Ben-
jamin, New York, 1967), p. 631.
11. A. Manabe, A. Mitsuishi, and H. Yoshinaga,Jpn. f. Appl. Phys. 6,593 (1967).
12. T. Hattori, Y. Homma, A. Mitsuishi, and M. Tacke, Opt. Commun. 7, 229 (1973).
13. W. W. Piper, D. T. F. Marple, and P. D. Johnson, Phys. Rev. 110,323 (1958).
14. T. M. Bientewski and S. J. Czyzak,J. Opt. Soc. Am. 53,496 (1963).
15. O. Brafman and I. T. Steinberger, Phys. Rev. 143,501 (1966).
16. V. D. Kulakovskii, V. I. Grinev, and M. P. Kulakov, Sov. Phys. Solid State 19,
345 (1977).
17. A. N. Pikhtin and A. D. Yas'kov, Sov. Phys. Semicond. 15,8(1981).
18. K. Vedam and T. A. Davis, Phys. Rev. 181, 1196 (1969).
19. Y. Brada, B. G. Yacobi, and A. Peled, Solid State Commun. 17,193 (1975).
20. J. O. Bimmock, in II-VI Semiconducting Compounds, edited by D. G. Thomas
(Benjamin, New York, 1967), p. 277.
21. W. R. Hunter, D. W. Angel, and G. Hass, f. Opt. Soc. Am. 68, 1319 (1978).
22. M. Cardona and R. Haensel, Phys. Rev. B 1,2605 (1970).
D3 WURTZITE ZINC SULPHIDE (a-ZnS) 435
14.--.---r--.---'-~---'
12
10 a-ZnS
8
~ 6
w 4
2
o
-2
_4L---L-~--~--~---L--~
14
12
10 - Elc
wN 8 ----- Ellc
6
4
2
o 2 6 8 10 12
Photon energy (eV)
Figure 03·2 E)(E) and EiE) spectra for a-ZnS at 300 K.
3
r:: 2
a-ZnS
1 ~ . ........ -
2
- Elc
----- Ellc
~ ,,
1
o 2 4 6 8 10 12
Photon energy (eV)
Figure D3·3 nee) and k(E) spectra for a-ZnS at 300 K.
r
107 1
- ---
"
106 "
" a-ZnS 0.8
"
""
'I 105 ':,, 0.6
~ 104 ,, a:
,, ",.11 0.4
e3 103 --- (a) Elc
I'
,",' I~ ~'~I
",-,
102 , 0.2
.,
101 0
0.8
106 _a
f"' 105 ----- R
0.6
E 0.4 a:
.2-104 "
\ " 11
,~:~: :>.
e3 103 ,' "'. '.
--_ ....
··, 0.2
(b) E II c '"
102
0
10-2 10-1 10° 10 1 102
Photon energy (eV)
Figure D34 al...E) and R(E) spectra for a-ZnS at 300 K.
Table D3-1 Optical constants of a-ZnS for E.Lc at 300 K.

eV £1 £2 n k a (cm·l ) R
0.01 9.970 0.023 3.158 0.004 3.76E+OO 0.269
0.02 11.67 0.092 3.416 0.013 2.72E+01 0.299
0.024 13.49 0.187 3.672 0.025 6. 19E+01 0.327
0.026 15.11 0.296 3.888 0.038 1.00E+02 0.349
0.028 17.85 0.532 4.226 0.063 1.79E+02 0.381
0.03 23.37 1.208 4.836 0.125 3.80E+02 0.432
0.031 28.88 2.156 5.377 0.201 6.30E+02 0.472
0.032 39.76 4.864 6.317 0.385 1.25E+03 0.529
0.0325 50.32 8.619 7.120 0.605 1.99E+03 0.570
0.033 69.89 18.99 8.436 1.126 3.77E+03 0.626
0.0335 109.8 64.62 10.89 2.966 1.0 1E+04 0.710
0.03375 115.9 149.5 12.35 6.051 2.07E+04 0,770
0.033% 7.526 229.3 10.88 10.53 3.63E+04 0.827
0.034 -23.69 225.2 10.07 11.18 3.86E+04 0.837
0.03425 -108.0 114.6 4.974 11.52 4.00E+04 0.882
0.0345 -88.81 51.16 2.615 9.780 3.42E+04 0.904
0.035 -52.51 16.45 1.121 7.333 2.6OE+04 0.923
0.0355 -34.92 7.798 0.656 5.945 2. 14E+04 0.931
0.036 -25.20 4.507 0.447 5.040 1.84E+04 0.935
0.037 -14.97 2.049 0.264 3.877 1.45E+04 0.936
0.038 -9.694 1.163 0.186 3.119 1.20E+04 0.933
0.04 -4.347 0.520 0.124 2.089 8.47E+03 0.912
D3 WURTZITE ZINC SULPHIDE (Il-ZnS) 437
Table D3-1 Continued (a-ZnS, E.1.c).

eV £1 £2 n k Il (em'l) R
0.042 -1.656 0.292 0.113 1.292 5.50E+03 0.844
0.044 -0.042 0.186 0.273 0.342 1.52E+03 0.372
0.046 1.030 0.129 1.017 0.063 2.%E+02 0.001
0.048 1.793 0.094 1.339 0.035 1.71E+02 0.021
0.05 2.361 0.072 1.537 0.023 1.18E+02 0.045
0.06 3.862 0.026 1.965 0.0066 4.03E+01 0.106
0.Q7 4.499 0.013 2.121 0.0031 2. 17E+01 0.129
0.08 4.843 0.0076 2.201 0.0017 1.39E+Ol 0.141
0.09 5.052 0.0048 2.248 0.0011 9.84E+00 0.148
0.1 5.192 0.0033 2.278 0.00073 7.39E+00 0.152
0.885 5.221 2.285
1.033 5.244 2.290
1.24 5.295 2.301
1.377 5.336 2.310
1.549 5.401 2.324
1.771 5.438 2.332
1.836 5.471 2.339
1.907 5.504 2.346
1.983 5.541 2.354
2.066 5.584 2.363
2.156 5.641 2.375
2.254 5.693 2.386
2.361 5.770 2.402
2.479 5.861 2.421
2.53 5.895 2.428
2.582 5.944 2.438
2.609 5.978 2.445
2.637 5.993 2.448
2.695 6.047 2.459
2.754 6.116 2.473
2.817 6.180 2.486
2.883 6.260 2.502
2.916 6.305 2.511
2.951 6.360 2.522
3.023 6.447 2.539
3.099 6.554 2.560
3.305 6.954 2.637
3.443 7.317 2.705
3.5 7.600 2.757 0.219
3.55 7.926 0.559 2.817 0.099 3.57E+04 0.227
3.6 8.458 1.533 2.920 0.263 9.58E+04 0.243
3.65 8.902 2.030 3.003 0.338 1.25E+05 0.256
3.7 8.759 2.331 2.985 0.390 1.46E+05 0.255
3.8 7.989 2.434 2.858 0.426 1.64E+05 0.241
3.9 7.980 2.423 2.857 0.424 1.68E+05 0.241
4 8.000 2.514 2.862 0.439 1.78E+05 0.242
4.1 8.035 2.609 2.871 0.454 1.89E+05 0.244
4.2 8.074 2.710 2.880 0.470 2.ooE+05 0.246
4.3 8.133 2.819 2.893 0.487 2. 12E+05 0.248
4.4 8.213 2.941 2.910 0.505 2.25E+05 0.251
Table D3·1 Continued (a-ZnS, E.1.c).

eV 10 1 £2 n k a (em· l ) R
4.5 8.300 3.077 2.928 0.525 2.40E+05 0.254
4.6 8.379 3.251 2.947 0.552 2.57E+05 0.258
4.7 8.499 3.419 2.972 0.575 2.74E+05 0.262
4.8 8.738 3.469 3.012 0.576 2.80E+05 0.267
4.9 9.097 3.463 3.068 0.564 2.80E+05 0.272
5 9.500 3.508 3.133 0.560 2.84E+05 0.280
5.1 9.900 3.742 3.200 0.585 3.02E+05 0.288
5.2 10.30 4.381 3.278 0.668 3.52E+05 0.301
5.3 10.70 5.589 3.374 0.828 4.45E+05 0.319
5.4 11.08 7.071 3.480 1.016 5.56E+05 0.340
5.5 11.10 8.615 3.546 1.215 6.77E+05 0.359
5.6 10.39 10.478 3.546 1.478 8.39E+05 0.379
5.7 8.876 10.825 3.382 1.600 9.25E+05 0.378
5.8 6.342 9.575 2.986 1.604 9.43E+05 0.353
5.9 4.212 8.340 2.603 1.602 9.58E+05 0.330
6 4.338 7.262 2.529 1.435 8.73E+05 0.303
6.1 4.561 6.727 2.519 1.335 8.26E+05 0.289
6.2 4.846 6.698 2.560 1.308 8.22E+05 0.288
6.3 5.159 6.867 2.622 1.310 8.36E+05 0.293
6.4 5.483 7.162 2.693 1.330 8.63E+05 0.301
6.5 5.800 7.569 2.769 1.367 9.01E+05 0.311
6.6 6.163 8.065 2.856 1.412 9.45E+05 0.323
6.7 6.247 8.626 2.907 1.484 1.0IE+06 0.334
6.8 5.332 9.480 2.847 1.665 1.15E+06 0.352
6.9 3.618 10.86 2.745 1.978 1.38E+06 0.388
7 2.300 10.48 2.553 2.053 1.46E+06 0.394
7.1 1.730 9.387 2.374 1.977 1.42E+06 0.379
7.3 0.750 8.748 2.183 2.004 1.48E+06 0.383
7.4 0.251 8.248 2.062 2.000 1.50E+06 0.383
7.5 -0.200 7.385 1.896 1.948 1.48E+06 0.377
7.6 -0.514 6.937 1.795 1.933 1.49E+06 0.378
7.7 -0.663 6.535 1.718 1.902 1.48E+06 0.375
7.8 -0.686 6.180 1.663 1.858 1.47E+06 0.369
7.9 -0.619 5.871 1.625 1.806 1.45E+06 0.360
8 -0.500 5.610 1.602 1.751 1.42E+06 0.349
8.1 -0.367 5.397 1.588 1.699 1.40E+06 0.337
8.2 -0.233 5.233 1.582 1.654 1.38E+06 0.327
8.3 -0.100 5.109 1.583 1.614 1.36E+06 0.317
8.4 0.033 5.012 1.588 1.578 1.34E+06 0.309
8.5 0.167 5.046 1.615 1.562 1.35E+06 0.304
8.6 0.300 5.190 1.658 1.565 1.36E+06 0.303
8.7 0.433 5.340 1.702 1.569 1.38E+06 0.303
8.8 0.524 5.499 1.739 1.581 1.41E+06 0.305
8.9 0.359 5.689 1.741 1.634 1.47E+06 0.316
9 0.003 5.865 1.713 1.712 1.56E+06 0.334
9.1 -0.435 5.969 1.666 1.792 1.65E+06 0.354
9.2 -0.842 5.726 1.572 1.821 1.70E+06 0.367
9.3 -1.149 5.379 1.475 1.823 I.72E+06 0.376
9.4 -1.488 5.052 1.375 1.838 1.75E+06 0.390
9.5 -1.800 4.721 1.275 1.851 1.78E+06 0.407
Table D3·1 Continued (a-ZnS, E.Lc).

eV t) t2 n k a (em')) R
9.6 -1.985 4.395 1.191 1.845 1.80E+06 00419
9.7 -1.979 4.085 1.131 1.805 1.78E+06 00420
9.8 -1.924 3.804 1.082 1.759 1.75E+06 0.417
9.9 -1.860 3.578 1.042 1.716 1.72E+06 00414
10 -1.800 3.385 1.008 1.678 1.70E+06 00411
10.2 -1.695 3.027 0.942 1.607 1.66E+06 00407
lOA -1.592 2.716 0.882 1.540 1.62E+06 00403
10.6 -1.486 20469 0.835 1.478 1.59E+06 0.398
10.8 -1.368 2.275 0.802 1.418 1.55E+06 0.390
11 -1.206 2.121 0.785 1.350 1.51E+06 0.373
11.2 -1.036 1.997 0.779 1.282 1.46E+06 0.352
1104 -0.898 1.901 0.776 1.225 1.42E+06 0.333
11.6 -0.765 1.847 0.785 1.176 1.38E+06 0.313
11.8 -0.633 1.830 0.807 1.133 1.36E+06 0.290
12 -0.500 1.846 0.840 1.098 1.34E+06 0.268
12.2 -0.357 2.034 0.924 1.100 1.36E+06 0.248
1204 -0.216 2.268 1.015 1.117 1.40E+06 0.235
12.6 -0.247 2.224 0.998 1.115 1A2E+06 0.237
12.8 -0.507 2.113 0.913 1.158 1.50E+06 0.270
13 -0.700 1.997 0.841 1.187 1.56E+06 0.299
13.2 -0.760 1.877 0.795 1.180 1.58E+06 0.311
1304 -0.808 1.751 0.748 1.170 1.59E+06 0.324
13.6 -0.824 1.623 0.706 1.150 1.59E+06 0.333
13.8 -0.786 1.514 0.678 1.116 1.56E+06 0.332
14 -0.729 1.432 0.663 1.081 1.53E+06 0.326
14.2 -0.670 1.371 0.654 1.048 1.51E+06 0.317
1404 -0.609 1.325 0.652 1.017 1.48E+06 0.307
14.6 -0.547 1.291 0.654 0.987 1A6E+06 0.295
14.8 -00484 1.261 0.658 0.958 1.44E+06 0.282
15 -00408 1.231 0.667 0.923 1.40E+06 0.265
15.2 -0.322 1.199 0.678 0.884 1.36E+06 0.246
1504 -0.233 1.167 0.692 0.844 1.32E+06 0.226
15.6 -0.149 1.136 0.706 0.805 1.27E+06 0.206
15.8 -0.078 1.104 0.717 0.770 1.23E+06 0.190
16 -0.026 1.073 0.724 0.741 1.20E+06 0.178
16.2 -0.001 1.042 0.722 0.722 l.19E+06 0.172
16.4 0.000 1.012 0.711 0.711 l.18E+06 0.172
16.6 0.000 0.983 0.701 0.701 1.18E+06 0.172
16.8 0.000 0.954 0.691 0.691 1.18E+06 0.172
17 0.000 0.927 0.681 0.681 1.17E+06 0.172
17.2 0.000 0.900 0.671 0.671 l.17E+06 0.172
1704 0.000 0.874 0.661 0.661 1.17E+06 0.173
17.6 0.000 0.849 0.652 0.652 1.16E+06 0.173
17.8 0.000 0.825 0.642 0.642 l.16E+06 0.174
18 0.000 0.802 0.633 0.633 1.16E+06 0.175
18.2 0.000 0.779 0.624 0.624 1.15E+06 0.175
1804 0.000 0.757 0.615 0.615 l.15E+06 0.176
18.6 0.000 0.736 0.607 0.607 1.14E+06 0.177
18.8 0.001 0.716 0.598 0.598 1.14E+06 0.178
19 0.D15 0.696 0.596 0.584 1.12E+06 0.174
Table D3-1 Continued (a-ZnS, E1.c).

eV £1 q n k a (em-I) R
19.2 0.045 0.678 0.602 0.563 1.10E-t06 0.165
19.4 0.084 0.660 0.612 0.539 1.06E+06 0.153
19.6 0.126 0.644 0.626 0.515 1.02E+06 0.139
19.8 0.167 0.629 0.639 0.492 9.88E+05 0.127
20 0.200 0.615 0.651 0.473 9.59E+05 0.117
20.2 0.227 0.603 0.660 0.457 9.35E+05 0.109
20.4 0.255 0.593 0.671 0.442 9.14E+05 0.102
20.6 0.281 0.584 0.682 0.428 8.94E+05 0.095
20.8 0.308 0.576 0.693 0.416 8.77E+05 0.088
21 0.333 0.571 0.705 0.405 8.61E+05 0.082
21.2 0.359 0.566 0.717 0.395 8.48E+05 0.076
21.4 0.383 0.563 0.729 0.386 8.38E+05 0.071
21.6 0.407 0.562 0.742 0.379 8.29E+05 0.066
21.8 0.429 0.561 0.754 0.372 8.23E+05 0.062
22 0.451 0.562 0.765 0.367 8.19E+05 0.058
22.2 0.472 0.565 0.777 0.363 8.18E+05 0.055
22.4 0.491 0.568 0.788 0.360 8. 18E+05 0.053
22.6 0.508 0.572 0.798 0.359 8.22E+05 0.050
22.8 0.519 0.578 0.805 0.359 8.29E+05 0.049
23 0.523 0.584 0.809 0.361 8.42E+05 0.049
23.2 0.523 0.591 0.810 0.365 8.59E+05 0.050
23.4 0.517 0.599 0.809 0.370 8.79E+05 0.051
23.6 0.508 0.608 0.807 0.377 9.02E+05 0.053
23.8 0.588 0.431 0.812 0.265 6.40E+05 0.032
24 0.604 0.431 0.820 0.263 6.39E+05 0.030
24.2 0.621 0.431 0.830 0.260 6.37E+05 0.028
24.4 0.639 0.431 0.840 0.257 6.35E+05 0.027
24.6 0.658 0.431 0.850 0.253 6.32E+05 0.025
24.8 0.678 0.431 0.861 0.250 6.29E+05 0.023
25 0.700 0.431 0.872 0.247 6.26E+05 0.022
25.2 0.728 0.427 0.887 0.241 6.16E+05 0.020
25.4 0.765 0.418 0.905 0.231 5.95E+05 0.017
25.6 0.811 0.404 0.927 0.218 5.66E+05 0.014
25.8 0.864 0.387 0.952 0.204 5.32E+05 0.011
26 0.922 0.369 0.979 0.189 4.97E+05 0.009
57 0.035 2.04E+05
60 0.033 1.99E+05
65 0.029 1.90E+05
70 0.026 1.82E+05
75 0.023 1.76E+05
80 0.021 1.71E+05
85 0.019 1.68E+05
88 0.019 1.73E+05
90 0.020 1.83E+05
91 0.021 1.90E+05
92 0.020 1.89E+05
92.5 0.020 1.88E+05
93 0.020 1.89E+05
94 0.020 1.92E+05
Table D3·1 Continued (a-ZnS. KLc).

eV 1:1 1:2 n k a (em· l ) R
95 0.019 1.84E+05
97 0.018 1.73E+05
100 0.017 1.71E+05
105 0.016 1.71E+05
110 0.Ql5 1.69E+05
120 0.013 1.61E+05
130 0.012 1.53E+05
140 0.011 1.49E+05
148 0.010 1.48E+05
Table D3·2 Optical constants oj a-ZnSJor EI/c at 300 K.

eV 1:1 1:2 n k a (em· l ) R
0.885 5.235 2.288
1.033 5.262 2.294
1.24 5.304 2.303
1.377 5.359 2.315
1.549 5.420 2.328
1.771 5.462 2.337
1.836 5.490 2.343
1.907 5.523 2.350
1.983 5.560 2.358
2.066 5.607 2.368
2.l56 5.655 2.378
2.254 5.722 2.392
2.361 5.794 2.407
2.479 5.881 2.425
2.53 5.919 2.433
2.582 5.968 2.443
2.609 5.998 2.449
2.637 6.017 2.453
2.695 6.066 2.463
2.754 6.136 2.477
2.817 6.190 2.488
2.883 6.275 2.505
2.916 6.320 2.514
2.951 6.376 2.525
3.023 6.472 2.544
3.099 6.574 2.564
3.305 6.970 2.640
3.443 7.339 2.709
3.5 7.502 2.739 0.216
3.55 7.741 0.0062 2.782 0.0011 4.01E+02 0.222
3.6 8.115 0.024 2.849 0.0041 1.51E+03 0.231
3.65 8.428 0.050 2.903 0.0086 3.20E+03 0.238
3.7 8.391 0.084 2.897 0.014 5.44E+03 0.237
3.8 7.948 0.166 2.819 0.030 1.l4E+04 0.227
3.9 7.865 0.266 2.805 0.047 1.87E+04 0.225
Table D3-2 Continued (a-ZnS, Elle).

eV £1 £2 n k aCem· 1) R
4 7.822 0.378 2.798 0.067 2.74E+04 0.224
4.1 7.836 00498 2.801 0.089 3.70E+04 0.225
4.2 7.924 0.624 2.817 0.111 4.71E+04 0.227
4.3 8.107 0.749 2.850 0.131 5.73E+04 0.232
404 8.379 0.871 2.899 0.150 6.70E+04 0.238
4.5 8.600 0.985 2.937 0.168 7.65E+04 0.243
4.6 8.609 1.059 2.940 0.180 8 AOE+04 0.244
4.7 8.554 1.099 2.931 0.188 8.94E+04 0.243
4.8 8.708 1.153 2.957 0.195 9A8E+04 0.246
4.9 9.032 1.293 3.013 0.215 1.07E+05 0.254
5 9.500 1.846 3.097 0.298 1.5IE+05 0.266
5.1 10.08 2.503 3.199 0.391 2.02E+05 0.281
5.2 10.70 3.277 3.308 00495 2.61E+05 0.296
5.3 11.28 4.193 30414 0.614 3.30E+05 0.312
504 11.78 5.596 3.523 0.794 4.35E+05 0.332
5.5 12.20 7.385 3.637 1.015 5.66E+05 0.354
5.6 11.68 10041 3.696 10408 8.ooE+05 0.385
5.7 9.986 12.00 3.578 1.677 9.69E+05 0.398
5.8 7.254 11.49 3.228 1.780 1.05E+06 0.386
5.9 4.000 9.905 2.709 1.828 1.09E+06 0.366
6 4.262 7.385 2.529 1.460 8.88E+05 0.306
6.1 4.653 7.010 2.556 1.371 8A8E+05 0.296
6.2 5.045 6.998 2.615 1.338 8AIE+05 0.296
6.3 5.339 7.149 2.670 1.339 8.55E+05 0.300
604 5.629 7.303 2.725 1.340 8.69E+05 0.304
6.5 5.908 7.815 2.802 1.394 9. 19E+05 0.317
6.6 6.138 8.803 2.904 1.516 1.0IE+06 0.338
6.7 6.282 9.929 3.003 1.653 1.12E+06 0.360
6.8 5.833 10.99 3.023 1.818 1.25E+06 0.380
6.9 4.110 11.89 2.889 2.058 lA4E+06 00403
7 2.000 11.08 2.574 2.151 1.53E+06 00408
7.1 0.460 9.354 2.216 2.110 1.52E+06 00401
7.2 0.753 9.296 2.245 2.070 1.5IE+06 0.394
7.3 0.359 8.923 2.155 2.070 1.53E+06 0.395
704 -0.500 8.308 1.978 2.100 1.58E+06 00404
7.5 -1.000 7.692 1.838 2.092 1.59E+06 00409
7.6 -1.059 7.077 1.746 2.027 1.56E+06 00400
7.7 -1.072 60462 1.655 1.952 1.52E+06 0.390
7.8 -1.035 5.872 1.570 1.870 1.48E+06 0.378
7.9 -0.945 50440 1.513 1.798 1.44E+06 0.366
8 -0.800 5.140 1.484 1.732 1.40E+06 0.353
8.1 -0.626 4.918 1.472 1.671 1.37E+06 0.339
8.2 -00450 4.721 1.465 1.611 1.34E+06 0.324
8.3 -0.272 40496 1.455 1.545 1.30E+06 0.308
804 -0.091 4.289 1.449 1.480 1.26E+06 0.292
8.5 0.101 4.308 1.485 10451 1.25E+06 0.283
8.6 0.329 4.535 1.561 10452 1.27E+06 0.280
8.7 0.531 4.792 1.636 1.465 1.29E+06 0.280
8.8 0.621 5.057 1.690 1.496 1.33E+06 0.286
8.9 00495 5.335 1.711 1.559 1.41E+06 0.300
Table DJ-2 Continued (a-ZnS, EI/c).

eV £1 £2 n k a (cm·1) R
9 0.210 5.600 1.705 1.642 1.50E+06 0.319
9.1 -0.158 5.734 1.670 1.717 1.58E+06 0.337
9.2 -0.534 5.654 1.604 1.762 1.64E+06 0.351
9.3 -0.870 5.389 1.515 1.779 1.68E+06 0.361
9.4 -1.265 5.055 1.405 1.799 1.7IE+06 0.377
9.5 -1.657 4.739 1.297 1.827 1.76E+06 0.398
9.6 -1.952 4.454 1.206 1.846 1.80E+06 0.417
9.7 -2.089 4.171 1.135 1.838 1.81E+06 0.428
9.8 -2.114 3.895 1.076 1.809 1.80E+06 0.432
9.9 -2.071 3.631 1.027 1.768 1.77E+06 0.432
10 -2.000 3.385 0.983 1.722 1.75E+06 0.430
10.2 -1.857 2.943 0.901 1.634 1.69E+06 0.426
10.4 -1.714 2.565 0.828 1.549 1.63E+06 0.423
10.6 -1.565 2.262 0.770 1.469 1.58E+06 0.418
10.8 -1.407 2.045 0.733 1.395 1.53E+06 0.407
11 -1.237 1.867 0.708 1.318 1.47E+06 0.392
11.2 -1.050 1.702 0.689 1.235 1.40E+06 0.370
11.4 -0.828 1.540 0.678 1.135 1.3IE+06 0.339
11.6 -0.572 1.451 0.703 1.033 1.21E+06 0.291
11.8 -0.351 1.502 0.772 0.973 1.16E+06 0.244
12 -0.190 1.600 0.843 0.949 1.15E+06 0.215
12.2 -0.102 1.736 0.905 0.959 1.19E+06 0.204
12.4 -0.106 1.878 0.942 0.997 1.25E+06 0.209
12.6 -0.210 1.905 0.924 1.031 1.32E+06 0.224
12.8 -0.373 1.851 0.870 1.063 1.38E+06 0.248
13 -0.546 1.751 0.803 1.091 1.44E+06 0.277
13.2 -0.679 1.630 0.737 1.106 1.48E+06 0.305
13.4 -0.756 1.490 0.676 1.102 1.50E+06 0.328
13.6 -0.808 1.324 0.610 1.086 1.50E+06 0.353
13.8 -0.787 1.214 0.575 1.057 1.48E+06 0.361
14 -0.719 1.223 0.592 1.034 1.47E+06 0.343
14.2 -0.636 1.242 0.616 1.008 1.45E+06 0.321
14.4 -0.544 1.164 0.609 0.956 1.40E+06 0.305
14.6 -0.452 1.041 0.584 0.891 1.32E+06 0.292
14.8 -0.368 0.924 0.560 0.825 1.24E+06 0.281
15 -0.300 0.862 0.553 0.779 1.18E+06 0.267
15.2 -0.241 0.842 0.563 0.747 1.15E+06 0.250
15.4 -0.182 0.822 0.575 0.715 1.12E+06 0.232
15.6 -0.125 0.803 0.586 0.684 1.08E+06 0.214
15.8 -0.074 0.783 0.597 0.656 1.05E+06 0.199
16 -0.033 0.763 0.605 0.631 1.02E+06 0.187
16.2 -0.0045 0.743 0.608 0.612 1.00E+06 0.178
16.4 0.0085 0.722 0.604 0.597 9.93E+05 0.175
16.6 0.011 0.697 0.595 0.586 9.86E+05 0.176
16.8 0.0073 0.671 0.582 0.576 9.81E+05 0.179
17 0.0010 0.647 0.569 0.568 9.79E+05 0.183
17.2 -0.0039 0.628 0.559 0.562 9.80E+05 0.186
17.4 -0.0035 0.617 0.554 0.557 9.83E+05 0.187
17.6 0.0050 0.615 0.557 0.552 9.86E+05 0.184
17.8 0.016 0.615 0.562 0.548 9.88E+05 0.179
Table D3·2 Continued (a-ZnS, Elle).

eV 10, 102 n k a (em") R
18 0.029 0.615 0.568 0.542 9.89E+05 0.175
18.2 0.044 0.615 0.575 0.535 9.88E+05 0.169
18.4 0.061 0.615 0.583 0.528 9.84E+05 0.162
18.6 0.082 0.615 0.593 0.519 9.79E+05 0.155
18.8 0.107 0.615 0.605 0.509 9.70E+05 0.146
19 0.148 0.615 0.625 0.492 9.48E+05 0.133
19.2 0.204 0.615 0.653 0.472 9.18E+05 0.116
19.4 0.265 0.615 0.684 0.450 8.85E+05 0.100
19.6 0.324 0.615 0.714 0.431 8.57E+05 0.086
19.8 0.372 0.615 0.738 0.417 8.37E+05 0.076
20 DAOO 0.615 0.753 0.409 8.29E+05 0.070
20.2 0.414 0.615 0.760 0.405 8.29E+05 0.068
20.4 0.426 0.615 0.766 0.402 8.30E+05 0.066
20.6 0.435 0.615 0.771 0.399 8.33E+05 0.064
20.8 0.443 0.615 0.775 0.397 8.37E+05 0.063
21 0.449 0.615 0.778 0.395 8.42E+05 0.062
21.2 0.454 0.615 0.781 0.394 8.47E+05 0.061
21.4 0.459 0.608 0.781 0.389 8.44E+05 0.060
21.6 0.464 0.580 0.777 0.373 8.18E+05 0.057
21.8 0.470 0.540 0.770 0.351 7.75E+05 0.054
22 0.476 0.496 0.763 0.325 7.25E+05 0.050
22.2 0.484 0.458 0.758 0.302 6.79E+05 0.047
22.4 0.494 0.434 0.759 0.286 6.50E+05 0.044
22.6 0.506 0.431 0.765 0.282 6.45E+05 0.042
22.8 0.519 0.431 0.772 0.279 6.45E+05 0.040
23 0.532 0.431 0.780 0.276 6.44E+05 0.038
23.2 0.545 0.431 0.787 0.274 6.44E+05 0.037
23.4 0.559 0.431 0.795 0.271 6.43E+05 0.035
23.6 0.573 0.431 0.803 0.268 6.42E+05 0.033
D4 CUBIC ZINC SULPHIDE
(p-ZnS)

Zinc sulphide (ZnS) is the prototype II-VI semiconductor. Its cubic form (P-ZnS), whi-
ch occurs naturally as a mineral, has given the name "zincblende" to the crystal struc-
ture (also called "sphalerite"). P-Zns is the primarily candidate for UV-light emitting
devices as a consequence of its large band-gap energy, -3.7 eV at room temperature. It
has the highest melting point (Tm=2103 K) and smallest lattice constant (a o=5.4102 Aat
300 K) among the II-VI zinc-blende-type semiconductors [1].
D4.2 ELECTRONIC ENERGY·BAND STRUCTURE

The electronic energy-band structure of P-Zns was investigated theoretically by several
authors (for recent studies, see Refs. [2-6]). Figure 04-1 shows the electronic energy-
band structure of p-ZnS as calculated using the semi-ab initio orthogonalized LCAO
method by Huang and Ching [7]. Table 04-1 summarizes the room-temperature values
of the interband transition energies in p-ZnS determined experimentally [8-11].
The electronic energy-band calculation [7] suggests the lowest gap of Eo=3.81 eV
(rtS~rt), in reasonable agreement with Theis' experimental value of Eo=3.78 eVat 16
K [12]. This theoretical calculation also gives the higher-lying-gap transitions (CPs),
Et=6.2 eV (l.:!~Lt), Ez=7.33 eV (X5~Xt)' Eo'=9.22 eV (rlS~rts), and E t '=11.16 eV
(l.:!~l.:!). No clear splitting of the EtI(Et+llt ) doublet was observed experimentally for
P-ZnS. This is because of the negligibly small SO interaction in this material. Two
dominant peaks at 5.8 and 7.0 eV can be recognized in experimental ~ spectrum (see
Fig. D4-4 below). These peaks may correspond to the E t and E2 CPs, respectively. A
shoulder is also evident at -7.3 eV. This shoulder may correspond to the Eo' CP. An ~
peak observed at 13 eV may be due to atomic d-band excitation. Note that the d band
has a considerable width both in experiment and theory [6]. It should also be noted that
optical spectra in the Et-E,' spectral region of p-ZnS are much sharper than those in
some III-V (and group-IV elemental) semiconductors (see, e.g., Refs. [13,14]). Such
spectral feature cannot be explained within the framework of the one-electron approxi-
mation. This fact clearly suggests a contribution of the excitonic effects in this spectral
region [11,15,16]. The excitonic effects are usually much stronger in II-VI semicon-
ductors than in III-V semiconductors.
445
:>
Q)
Figure D4-1 Electronic energy-band

structure of ~-ZnS as calculated using
the semi-ab initio orthogonalized LCAO
{3 -ZnS
,.
method. (From Huang and Ching [7].)
o
L r XK r
TABLE D4-1 Energies of the CPs and positions of peaks in the
optical spectra of [3-ZnS at 300 K.
CPs eV
Eo 3.75
Eo+Ao 3.82
5.8"
7.0
9.2
13
"2D-exciton energy

The room-temperature values of the static and high-frequency dielectric constants of 13-
ZnS are reported to be e,=8.9 and e~=5.7 [17], respectively. Some data on the tempera-
ture and hydrostatic-pressure dependence of the static dielectric constant have been re-
ported [18]. These data showed that e, decreases with decreasing temperature and with
increasing pressure.
Optical properties in the reststrahlen region of I3-ZnS have been studied by Manabe et
al. [17] at room temperature. The reststrahlen parameters obtained are: Olro=282 cm-I ,
D4 CUBIC ZINC SULPHIDE (p-ZnS) 447
O)LQ=352 cm-!, and "(=6.8 cm-! (1::,=8.9 and 1::_=5.7). Optical absorption in the multipho-
non absorption band region of ~-ZnS has also been studied [19,20]. The absorption
spectra in Ref. [20] are dominated by extrinsic effects over much of the region of inter-
est. In Ref. [19], the two-phonon combinations and their locations in the BZ were suc-
cessfully identified; however, the absorption spectra reported were plotted in arbitrary
scale.
The refractive-index dispersion in the transparent region of ~-Zns has been measured
by several authors (see Refs. [11,21]). Figure D4-2 plots the neE) data of ~-ZnS meas-
ured by Cardona and Harbeke (solid squares, Ref. [8]), Czyzak et al. (open circles, Ref.
[22]), Piper et al. (open squares, Ref. [23]), Piper (open triangles, Ref. [24]), Eastman
Kodak Pub. (inverse open triangles, Ref. [25]), and Bond (solid circles, Ref. [26]), to-
gether with those measured by Ozaki and Adachi using SE (solid line) [11]. The dashed
line represents the calculated result of the first-order Sellmeier equation, Eq. (D2.1),
with A=4.17, B=I.06, and C=0.087 11m2. The temperature and pressure coefficients of
the refractive index have also been determined experimentally by Bertolotti et al. [27]
and Griebl et al. [28], respectively. A comprehensive review of the refractive index for
~-ZnS (ZnSe and ZnTe) and its temperature derivatives reported up until 1984 has been
3.0.--------------,----,
(3 -ZnS
• Cardona & Harbeke
2.8 o Czyzak et al.
[] Piper et al.
I>. Piper
v Eastman Kodak Pub.
c: • Bond
2.6 -SE
- - - - Sellmeier Eq.
2.4
•• iii
v ....
Photon energy (eV)

Figure D4-2 neE) dispersion of P-Zns measured by Cardona and Harbeke (solid squares, Ref.
[8]), Czyzak: et at. (open circles, Ref. [22]), Piper et al. (open squares, Ref. [23]), Piper (open
triangles, Ref. [24]), Eastman Kodak: Pub. (inverse open triangles, Ref. [25]), and Bond (solid
circles, Ref. [26]), together with those detennined using SE (solid line). The dashed line repre-
sents the calculated result of the first-order Sellmeier equation, Eq. (D2.1), with A=4.17, 8=1.06,
and C=O.087 !lffi2. (From Ozaki and Adachi [11].)
given by Li [21], who presents the results in a variety of graphical forms.
The effects of pressure on the fundamental absorption edge of cubic Zns have been
studied by Yes et al. [29] covering the full stability range of the tetrahedral phase (0-15
GPa) at 300 K. The samples used were natural single crystals of cubic Zns (sphalerite).
The Eo edge at zero pressure was found to be given by Eo=3.666±O.01O eV. Optical ab-
sorption properties of MOVPE-grown ZnS epilayers on (100)GaAs have also been re-
ported by Fernandez et al. [30]. We reproduce in Fig. 04-3 the absorption spectrum at
10 K from a 0.87-flm-thick ZnS/GaAs heterostructure [30]. Sharp exciton resonances
associated with the HH (XHHIs) and LH (XLHIs) doublets along with the SO resonance
(XSOh) can be seen at around 3.80 and 3.87 eV, respectively. The XHHh_XLHIs splitting is
due to the elastic strain in the heterostructure. Two-photon absorption spectroscopy has
also been used recently to determine the exciton parameters of polycrystalline Zns as a
function of hydrostatic pressure in the range of 0-6 GPa [31].
Fundamental reflectivity properties near the exciton resonance of ZnO have been re-
ported and compared with the valence-band structure of zinc-blende-type crystals
T= 10 K
r--..
-;' 1.8
5
~ 1.6
......
~1.4
!:l
8 1.2
ffi
0 1.0
U
Z
0°·8
f::
~0.6
o
CIl
~ 0.4
0.2
3.76 3.78 3.80 3.82 3.84 3.86 3.88 3.90 3.92 3.94
ENERGY (eV)
Figure D4-3 Absorption spectrum at 10 K from a 0.87-IJ.II1-thick ZnS/GaAs heterostructure
(solid circles). The best fit of the data is shown by the thick solid line, together with the individ-
ual Is and 2s HH, LH, and SO absorption resonances and continuum edge including the Som-
merfeld factor (thin solid lines). (From Femlindez et al. [30].)
D4 CUBIC ZINC SULPHIDE (~-ZnS) 449
[32,33]. The crystals measured were sphalerite [32] and MOCVD-grown Zns films on
(100)GaAs and (111)Si substrates [33].
The reflectivity spectra in the interband transition region of bulk ZnS crystals have
been measured by Cardona and Harbeke [8] and Baars [9]. By performing the KK
analysis, the (n, k) values in the 0-20-eV region were extracted [13]. The CPs observed
in these studies were correlated with various electronic transitions in the BZ [7,8]. Lite
et al. [34] also studied the fundamental reflectivity of a Zns film and found in it several
CP peaks and shoulders at energies of 5.7,7.0, 7.5, and >9 e V.
The (£1' €.J values for ~-Zns have been measured using SE by Ozaki and Adachi [11]
in the 1.2-5.6-eV spectral region at room temperature. The ~-Zns single crystals used
in these measurements were grown by a vapor-phase method and not intentionally
doped. The measured SE data revealed distinct structures at energies of the EoI(Eo+l!.o)
CPs. Dielectric-related optical constants of ~-Zns, such as the complex refractive index
(n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R), were also
presented.
Sulfur K- and L-edge X-ray absorption near-edge structures of sphalerite have been
obtained using synchrotron radiation [35]. Optical properties in the vacuum-UV region
of ZnS have also been studied by several authors (36-150-eV region by Cardona and
Haensel [36]; 6-77-eV region by Hunter et al. [37]). However, the films used in these
experiments were obtained by vacuum evaporation on noncrystalline substrates [36,37],
and thus they were polycrystalline with randomly oriented crystallites of hexagonal and
cubic forms [37]. Similarly, Hattori et al. [38] reported the refractive indices and ab-
sorption coefficients in still-smaller frequency range (10-100 cm- I) of Zns crystals
grown by the Bridgman method; however, these crystals were described as a mixture of
cubic and hexagonal ZnS.
Table D4-2 lists the room-temperature values of £=£I+i~, n*=n+ik, a., and R for ~
ZnS. A complete set of the optical constants for E'5.0.07 eV were calculated from the
reststrahlen parameters of Manabe et al. [17]. The real optical constants, £1 and n, were
taken from the Eastman Kodak Pub. [25] for 0.103'5,£::;0.413 eV and from Bond [26]
for 0.516'5,£::;2.754 eV. A set of the optical constants for 2.75'5,£::;5.4 eV were taken
from Ozaki and Adachi [11], while those for 5.7'5,£::;20 eV were obtained from Cardona
and Harbeke [8]. No essential differences between the cubic and wurtzite Zns spectra
should exist in the high-energy spectral region [36]. We have already listed the absorp-
tion constants ofZnS (o.-ZnS) for E257 eV in Table D3-1.
The (£1' ~), (n, k), a., and R values in Table D4-2 are plotted in Figs. D4-4-D4-7,
respectively. The vertical arrows in the figures indicate the positions of each CPo It has
been shown [11] that such optical-constant spectra can be successfully explained by the
MDF.
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jamin, New York, 1967), p. 631.
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conductors (pergamon, Oxford, 1968).
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12. D. Theis, Phys. Status Solidi B 79,125 (1977).
16. T. Aoki and S. Adachi, l. Appl. Phys. 69,1574 (1991).
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21. H. H. Li, l. Phys. Chem. Ref Data 13, 103 (1984).
22. S. J. Czyzak, D. C. Reynolds, R. C. Allen, and C. C. Reynolds, l. Opt. Soc. Am. 44,
864 (1954).
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24. W. W. Piper, Phys. Rev. 92, 23 (1953).
25. Eastman Kodak Publication No. U-72, Rochester, New York, 1971.
26. W. L. Bond,l. Appl. Phys. 36, 1674 (1965).
27. M. Bertolotti, V. Bogdanov, A. Ferrari, A. Jascow, N. Nazorova, A. Pikhtin, and L.
Schirone, l. Opt. Soc. Am. B 7, 918 (1990).
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Gebhardt, Acta Phys. Polon. A 88, 995 (1995).
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42,9113 (1990).
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and M. R. Perrone, Phys. Rev. B 55, 7660 (1997).
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(1996).
32. V. V. Sobolev, V. 1. Donetskikh, and E. F. Zagainov, Sov. Phys. Semicond. 12,
646 (1978).
33. A. Abounadi, M. Di Blasio, D. Bouchara, J. Calas, M. Averous, O. Briot, N. Briot,
T. Cloitre, R. L. Aulombard, and B. Gil, Phys. Rev. B 50, 11677 (1994).
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H. Mauch, Appl. Phys. Lett. 69,3525 (1996).
35. D. Li, G. M. Bancroft, M. Kasrai, M. E. Fleet, X. H. Feng, K. H. Tan, and B. X.
Yang, J. Phys. Chem. Solids 55, 535 (1994).
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12
:!." EoO(?)
E1(EX)! ~ E2
10
8 '' "
o
.
"
{3 -ZnS
f!
!
00'
I I E11
II 0 ,: :I
I
6 , ,
I
• "
"
I
,
,
w ' ,
o "
I I
", ,,
:"
d
4 ,,
, !
2 ,, .. _........ ,
,, E2
0
,,
0
0
E1
-2
0 4 8 12 16 20
Photon energy (eV)
Figure D4·4 elE) and elE) spectra for P-Zns at 300 K.
{3 -ZnS
3
n
-':II::
2
c d
,
, !
1 EOl ,,
,,
':k
, "-
,
0 4 8 16 12 20
Photon energy (eV)
Figure D4-S n(E) and k(E) spectra for ~-ZnS at 300 K.
-
..-
I
E104
-(,)
{3 -ZnS
100'L---'----'--'---'-'-'-'-'-'-----l
10-2 10- 1 2 10 30
Photon energy (eV)
Figure D4-6 C1J..E) spectrum for ~-ZnS at 300 K.
0.4
E1(Ex~ ! ! E2 El
0.3
0:
0.2
13 -ZnS
0.1
0 4 8 12 16 20
Photon energy (eV)
Figure D4-7 R(E) spectrum for ~-Zns at 300 K.
Table D4-2 Optical constants of {3-ZnS at 300 K.

eV £\ Ez n k a (cm'\) R
0.01 9.185 0.026 3.031 0.0043 4.36E+OO 0.254
0.02 10.46 0.097 3.234 0.015 3.04E+Ol 0.278
0.022 11.00 0.132 3.316 0.020 4.46E+Ol 0.288
0.024 11.75 0.189 3.428 0.028 6.69E+Ol 0.301
0.026 12.85 0.286 3.585 0.040 1.05E+02 0.318
0.028 14.61 0.478 3.822 0.063 I.77E+02 0.343
0.03 17.78 0.945 4.218 0.112 3.4IE+02 0.381
0.032 25.11 2.635 5.018 0.263 8.52E+02 0.447
0.033 33.92 5.884 5.846 0.503 1.68E+03 0.504
0.0335 42.08 10.27 6.535 0.786 2.67E+03 0.545
0.034 55.73 21.70 7.601 1.427 4.92E+03 0.600
0.0345 73.00 61.78 9.182 3.364 1.1 8 E+04 0.681
0.0346 72.14 78.35 9.451 4.145 1.45E+04 0.701
0.0347 65.30 98.10 9.569 5.126 1.80E+04 0.723
0.0348 49.08 118.0 9.404 6.273 2.21E+04 0.745
0.0349 22.59 131.4 8.829 7.440 2.63E+04 0.768
0.03495 6.940 133.3 8.380 7.955 2.82E+04 0.778
0.035 -8.751 131.6 7.846 8.385 2.98E+04 0.789
0.0351 -35.48 118.5 6.640 8.920 3.17E+04 0.807
0.0352 -51.99 98.67 5.456 9.042 3.23E+04 0.823
0.03535 -60.09 70.06 4.013 8.729 3. 13E+04 0.842
0.0355 -57.85 49.19 3.007 8.178 2.94E+04 0.855
0.036 -39.49 18.39 1.427 6.444 2.35E+04 0.880
0.037 -19.73 5.360 0.598 4.481 1.68E+04 0.894
0.038 -11.54 2.473 0.362 3.416 1.32E+04 0.893
Table D4-2 Continued ([3-ZnS).

eV £! £2 n k aCem'!) R
0.04 -4.556 0.910 0.212 2.145 8.70E+03 0.860
0.042 -1.480 0.467 0.189 1.231 5.24E+03 0.741
0.044 0.241 0.282 0.553 0.255 1.14E+03 0.107
0.046 1.336 0.188 1.159 0.081 3.79E+02 0.007
0.048 2.092 0.134 1.447 0.046 2.26E+02 0.034
0.05 2.645 0.100 1.627 0.031 1.56E+02 0.057
0.06 4.057 0.035 2.014 0.0086 5.25E+01 0.113
0.07 4.637 0.017 2.153 0.0039 2.80E+01 0.134
0.103 4.704 2.169 0.136
0.113 4.772 2.185 0.138
0.124 4.834 2.199 0.140
0.138 4.887 2.211 0.142
0.155 4.934 2.221 0.144
0.177 4.975 2.230 0.145
0.207 5.009 2.238 0.146
0.248 5.039 2.245 0.147
0.31 5.064 2.250 0.148
0.413 5.089 2.256 0.149
0.516 5.109 2.2604 0.149
0.563 5.124 2.2637 0.150
0.62 5.132 2.2653 0.150
0.689 5.144 2.2680 0.151
0.775 5.160 2.2716 0.151
0.885 5.181 2.2762 0.152
1.033 5.208 2.2822 0.153
1.24 5.259 2.2932 0.154
1.377 5.302 2.3026 0.156
1.549 5.357 2.3146 0.157
1.771 5.444 2.3333 0.160
2.066 5.588 2.3640 0.164
2.479 5.860 2.4208 0.173
2.754 6.105 2.4709 0.180
2.78 6.111 2.472 0.180
2.8 6.133 2.476 0.180
2.82 6.153 2.481 0.181
2.84 6.173 2.485 0.182
2.86 6.194 2.489 0.182
2.88 6.216 2.493 0.183
2.9 6.241 2.498 0.183
2.92 6.267 2.503 0.184
2.94 6.293 2.509 0.185
2.96 6.319 2.514 0.186
2.98 6.345 2.519 0.186
3 6.371 2.524 0.187
3.02 6.397 2.529 0.188
3.04 6.424 2.534 0.188
3.06 6.451 2.540 0.189
3.08 6.485 2.547 0.190
3.1 6.519 2.553 0.191
3.12 6.549 2.559 0.192
Table D4-2 Continued ((3-ZnS).

eV £1 ~ n k a (cm·1) R
3.14 6.579 2.565 0.193
3.16 6.611 2.571 0.194
3.18 6.646 2.578 0.195
3.2 6.684 2.585 0.196
3.22 6.724 2.593 0.197
3.24 6.761 2.600 0.198
3.26 6.800 2.608 0.199
3.28 6.846 2.616 0.200
3.3 6.895 2.626 0.201
3.32 6.924 2.631 0.202
3.34 6.992 2.644 0.204
3.36 7.040 2.653 0.205
3.38 7.087 2.662 0.206
3.4 7.147 2.673 0.208
3.42 7.203 2.684 0.209
3.44 7.280 2.698 0.211
3.46 7.354 2.712 0.213
3.48 7.400 2.720 0.214
3.5 7.512 2.741 0.217
3.52 7.565 2.751 0.218
3.54 7.687 2.773 0.221
3.56 7.804 2.794 0.224
3.58 7.898 0.713 2.813 0.127 4.60E+04 0.227
3.6 8.136 0.813 2.856 0.142 5.20E+04 0.233
3.62 8.249 0.957 2.877 0.166 6.10E+04 0.236
3.64 8.396 1.155 2.904 0.199 7.34E+04 0.240
3.66 8.514 1.385 2.927 0.237 8.78E+04 0.244
3.68 8.537 1.640 2.935 0.279 1.04E+05 0.246
3.7 8.480 1.879 2.930 0.321 1.20E+05 0.246
3.72 8.378 2.037 2.915 0.349 1.32E+05 0.245
3.74 8.257 2.110 2.896 0.364 1.38E+05 0.243
3.76 8.128 2.181 2.876 0.379 1.45E+05 0.242
3.78 7.992 2.250 2.854 0.394 1.51E+05 0.239
3.8 7.882 2.250 2.835 0.397 1.53E+05 0.237
3.82 7.810 2.248 2.823 0.398 1.54E+05 0.236
3.84 7.765 2.246 2.815 0.399 1.55E+05 0.235
3.86 7.741 2.245 2.811 0.399 1.56E+05 0.234
3.88 7.723 2.247 2.808 0.400 1.57E+05 0.234
3.9 7.713 2.253 2.806 0.401 1.59E+05 0.234
3.92 7.707 2.264 2.805 0.403 1.60E+05 0.234
3.94 7.702 2.281 2.805 0.407 1.62E+05 0.234
3.96 7.702 2.304 2.806 0.411 1.65E+05 0.234
3.98 7.703 2.328 2.806 0.415 1.67E+05 0.234
4 7.704 2.353 2.807 0.419 1.70E+05 0.235
4.02 7.705 2.379 2.808 0.424 1.73E+05 0.235
4.04 7.707 2.405 2.809 0.428 1.75E+05 0.235
4.06 7.710 2.433 2.810 0.433 1.78E+05 0.236
4.08 7.716 2.463 2.812 0.438 1.8IE+05 0.236
4.1 7.722 2.492 2.814 0.443 1.84E+05 0.236
4.12 7.727 2.519 2.816 0.447 1.87E+05 0.237
Table D4·2 Continued ({3-ZnS).

eV £, £2 n k IX (em·') R
4.14 7.733 2.546 2.817 0.452 1.90E+05 0.237
4.16 7.740 2.576 2.819 0.457 1.93E+05 0.238
4.18 7.751 2.611 2.822 0.463 1.96E+05 0.238
4.2 7.762 2.646 2.825 0.468 1.99E+05 0.239
4.22 7.774 2.674 2.828 0.473 2.02E+05 0.240
4.24 7.786 2.701 2.831 0.477 2.05E+05 0.240
4.26 7.800 2.734 2.834 0.482 2.08E+05 0.241
4.28 7.816 2.776 2.838 0.489 2. 12E+o5 0.242
4.3 7.832 2.814 2.842 0.495 2. 16E+05 0.242
4.32 7.846 2.845 2.845 0.500 2. 19E+05 0.243
4.34 7.860 2.875 2.849 0.505 2.22E+05 0.244
4.36 7.873 2.908 2.852 0.510 2.25E+05 0.244
4.38 7.887 2.941 2.855 0.515 2.29E+05 0.245
4.4 7.900 2.980 2.859 0.521 2.32E+05 0.246
4.42 7.915 3.023 2.863 0.528 2.37E+05 0.247
4.44 7.932 3.068 2.867 0.535 2.4IE+05 0.247
4.46 7.948 3.113 2.871 0.542 2.45E+05 0.248
4.48 7.965 3.158 2.875 0.549 2.49E+05 0.249
4.5 7.982 3.203 2.879 0.556 2.54E+05 0.250
4.52 8.000 3.246 2.884 0.563 2.58E+05 0.251
4.54 8.018 3.289 2.888 0.569 2.62E+05 0.252
4.56 8.039 3.332 2.893 0.576 2.66E+05 0.253
4.58 8.068 3.373 2.899 0.582 2.70E+05 0.254
4.6 8.096 3.415 2.905 0.588 2.74E+05 0.255
4.62 8.115 3.469 2.910 0.596 2.79E+05 0.256
4.64 8.133 3.531 2.915 0.606 2.85E+05 0.257
4.66 8.157 3.585 2.921 0.614 2.90E+05 0.258
4.68 8.190 3.632 2.928 0.620 2.94E+05 0.259
4.7 8.219 3.684 2.935 0.628 2.99E+05 0.261
4.72 8.241 3.747 2.941 0.637 3.05E+05 0.262
4.74 8.262 3.815 2.946 0.647 3. 11E+05 0.263
4.76 8.286 3.885 2.953 0.658 3. 17E+05 0.264
4.78 8.315 3.959 2.960 0.669 3.24E+05 0.266
4.8 8.342 4.031 2.967 0.679 3.31E+05 0.267
4.82 8.362 4.083 2.972 0.687 3.36E+05 0.268
4.84 8.378 4.126 2.976 0.693 3.40E+05 0.269
4.86 8.405 4.189 2.983 0.702 3.46E+05 0.271
4.88 8.442 4.269 2.992 0.713 3.53E+05 0.272
4.9 8.475 4.347 3.000 0.725 3.60E+05 0.274
4.92 8.500 4.404 3.006 0.733 3.65E+05 0.275
4.94 8.523 4.454 3.012 0.740 3.70E+05 0.276
4.96 8.543 4.533 3.018 0.751 3.78E+05 0.277
4.98 8.559 4.654 3.025 0.769 3.88E+05 0.279
5 8.581 4.768 3.033 0.786 3.98E+05 0.281
5.02 8.608 4.838 3.040 0.796 4.05E+05 0.283
5.04 8.635 4.898 3.047 0.804 4.l1E+05 0.284
5.06 8.663 4.998 3.055 0.818 4.20E+05 0.286
5.08 8.691 5.135 3.065 0.838 4.3IE+05 0.288
5.1 8.718 5.263 3.074 0.856 4.43E+05 0.291
5.12 8.734 5.353 3.080 0.869 4.51E+05 0.292
Table D4-2 Continued (fJ-znS).

eV £1 q n k (l (em· l ) R
5.14 8.741 5.438 3.085 0.881 4.59E+05 0.293
5.16 8.752 5.565 3.092 0.900 4.71E+05 0.295
5.18 8.767 5.710 3.101 0.921 4.84E+05 0.298
5.2 8.778 5.853 3.109 0.941 4.96E+05 0.300
5.22 8.768 5.989 3.113 0.962 5.09E+05 0.302
5.24 8.743 6.123 3.116 0.983 5.22E+05 0.304
5.26 8.727 6.249 3.119 1.002 5.34E+05 0.306
5.28 8.717 6.359 3.123 1.018 5,45E+05 0.307
5.3 8.704 6.482 3.127 1.037 5.57E+05 0.309
5.32 8.678 6.626 3.130 1.058 5.7IE+05 0.311
5.34 8.632 6.770 3.131 1.081 5.85E+05 0.313
5.36 8.568 6.915 3.129 1.105 6.ooE+05 0.315
5.38 8.496 7.059 3.126 1.129 6.16E+05 0.317
5,4 8.423 7.204 3.123 1.153 6.31E+05 0.318
5.7 7.21 9.23 3.08 1.50 8.67E+05 0.348
5.8 5.52 9.86 2.90 1.70 1.ooE+06 0.359
5.9 3.74 9.04 2.60 1.74 1.04E+06 0.349
6 2.40 7.82 2.30 1.70 1.03E+06 0.332
6.05 2,42 7.31 2.25 1.63 9.97E+05 0.318
6.2 3.73 5.75 2.30 1.25 7.86E+05 0.261
6.4 4.38 5.79 2.41 1.20 7.79E+05 0.263
6.6 4.66 6.31 2.50 1.26 8,45E+05 0.278
6.8 4.90 7.25 2.61 1.39 9.57E+05 0.302
7 3.50 10.2 2.68 1.91 1.36E+06 0.377
7.1 1.13 9.16 2.28 2.01 1.45E+06 0.384
7.2 0.95 8.02 2.13 1.89 1.38E+06 0.362
7.3 0.64 7.84 2.06 1.90 1.41E+06 0.365
7.4 0.24 7.55 1.98 1.91 1.43E+06 0.368
7.5 -0.11 6.68 1.81 1.84 1.40E+06 0.359
7.6 -0.17 6.04 1.71 1.76 1.36E+06 0.345
7.8 -0.33 5.36 1.59 1.69 1.33E+06 0.335
8 -0.30 4.85 1.51 1.61 1.30E+06 0.320
8.2 -0.09 4.37 1.46 1.49 1.24E+06 0.295
8,4 0.19 4.10 1.47 1,40 1.19E+06 0.271
8.6 0.67 3.93 1.53 1.29 1.12E+06 0.241
8.75 1.04 4.03 1.61 1.25 1. 11 E+06 0.231
8.8 1.17 4.20 1.66 1.26 1.13E+06 0.234
8.9 1.03 4.63 1.70 1.36 1.23E+06 0.257
9 0.74 4.89 1.69 1.45 1.32E+06 0.276
9.2 0.20 5.00 1.61 1.55 1.45E+06 0.301
9.4 -0.36 4.85 1.50 1.62 1.54E+06 0.323
9.8 -1.14 4.15 1.26 1.65 1.64E+06 0.357
10.2 -1.13 3.25 1.08 1.51 1.56E+06 0.348
10.6 -1.02 2.68 0.96 1.39 1.50E+06 0.336
11 -0.83 2.25 0.89 1.27 1.41E+06 0.314
11.5 -0.51 1.93 0.86 1.12 1.30E+06 0.269
12 -0.11 1.82 0.93 0.98 1.19E+06 0.207
12.5 0.00 1.90 0.98 0.98 1.24E+06 0.196
13 -0.13 1.96 0.96 1.03 1.35E+06 0.216
13.5 -0.28 1.83 0.89 1.03 1.41E+06 0.233
Table D4·2 Continued (f3-ZnS),

eV £1 £z n k a (cm·I ) R
14 -0.32 1.60 0,81 0,99 1.40E+06 0,237
15 -0,23 1.23 0,72 0,86 1.31E+06 0,223
16 -0,10 1.04 0,69 0,76 1.23E+06 0,196
17 0.01 0,90 0,68 0,67 1.15E+06 0,170
18 0.09 0.79 0.66 0,59 1.08E+06 0,150
19 0,16 0.70 0,66 0,53 1.02E+06 0,130
20 0.21 0,64 0.66 0.48 9.76E+05 0.115
D5 ZINC SELENIDE
(ZnSe)
DS.l GENERAL REMARKS

Zinc selenide (ZnSe) crystallizes in the cubic, zinc-blende structure, although it is also
possible to grow hexagonal wurtzite fonn. ZnSe is the prototype of wide-band-gap
II-VI semiconductors and plays an important role in the development of blue-green or
blue injection lasers (see, e.g., Ref. [1]). Many attempts have, thus, been made to
achieve epitaxial growth of ZnSe layers on GaAs substrates [2] because of the rela-
tively small lattice mismatch between GaAs and ZnSe (-0.27%). Its large band gap and
closely lattice-matched nature make it also attractive for use as a passivation layer for
GaAs and as an insulating layer of GaAs field-effect transistors [3]. ZnSe is also
promising material for nonlinear optical devices (see, e.g., Ref. [4]).
DS.2 ELECTRONIC ENERGY-BAND STRUCTURE

A wide variety of calculations and experiments have yielded detailed infonnation on
the electronic energy-band structure of ZnSe (see Ref. [5]). We reproduce in Fig. D5-1
the energy-band structure ofZnSe as calculated by Chelikowsky and Cohen [6] with an
ENPM. The SO interactions were included in this calculation. We also list in Table D5-
1 some CP energies and peak positions of the main structures present in the optical
spectra ofZnSe [5].
The fundamental absorption edge of ZnSe corresponds to direct transitions from the
highest valence band to the lowest conduction band at the r point (Eo, rs -+r~. At 300
K, the Eo-gap energy is 2.69 eV and its SO-splitting gap Eo+6o (r7-+r6) is 3.10 eV.
The higher transition at k=O (D is labeled Eo' (-8.5 eV, r S-+r7). A further Eo' transi-
tion, found in the calculation [6], is located along [100] (A) about 60% of the way from
rtox.
The EI and EI+AI transitions may occur along the <111> directions (A) or at the L
point in the BZ (E I -4.75 eV: A4.S-+A6 or ~.S-+L6; E I+AI-5.05 eV: A6-+~ or L6-+LJ.
The ~ and ~+S transitions are thought to occur at the X point and at energies -6.7 e V
(X7 -+~ and -7.2 eV (X7 -+X7), respectively. The EI' and EI '+AI' transitions are also
expected to occur along the <111> directions (A) or at the L point and at energies -9.1
eV (EI': A4,s-+A6 or L4,s-+L6) and -9.6 eV (E I'+AI ': A4.S-+A4.S or L4,s-+L4•S)'
459
8 L4.5
Ls
6
Ls
-
4
>ell 2
0
~
a: -2 Ls
UJ
z
UJ
-6 Xs
ZnSe
-8
-10 Xs
rs
L 1\ r 1\ X U.K t r
WAVE VECTOR k
Figure DS·l Electronic energy-band structure of ZnSe as calculated with an ENPM. (From
Chelikowsky and Cohen [6].) The locations of several interband transitions are included by the
vertical arrows.
TABLE DS·l Energies oj the CPs and positions oj peaks in the optical spectra
oJZnSe at 300 K.
CPs eV
Eo 2.69
Eo+~ 3.10
EI 4.75"
EI+~I 5.05"
E2 6.7
E2+13 7.2
EI' 9.1
EI'+~I' 9.6
d1 10.6
d2 13.8
"2D-exciton energy.
D5 ZINC SELENIDE (ZnSe) 461

Measurements of the high-frequency (E..) and static dielectric constants (E.) of ZnSe
have yielded widely different values ranging from 5.4 to 6.1 (E_) and from 7.6 to 9.25
(E.) (see Ref. [5]). Later, Deneuville et al. [7] determined the 300-K values of E_ and E,
to be 6.2 and 9.3, respectively, from IR transmission measurements. The samples used
in these measurements were polycrystalline ZnSe with thicknesses of 22.7-3020 Ilm.
Their obtained E, value is in good agreement with those determined from capacitance
measurements by Berlincourt et al. [8] (9.12±2% at 293 K and 10 kHz) and by
Strzalkowski et al. [9] (9.25 at 296 K and 20-1x106 Hz).
Room-temperature optical spectra in the reststrahlen region of ZnSe have been re-
ported by several authors [7,10-12]. The reflectivity values R in this region from vari-
ous labs agree to within the experimental accuracy. Low-temperature (T=80-100 K)
reststrahlen spectra have also been reported in Refs. [11,12]. Optical absorption in the
multiphonon absorption band region has been reported in Refs. [7,10,12-14]; however,
the a values quoted by these reports disagree by up to an order of magnitude (see Ref.
[7]). The. refractive indices and absorption coefficients in the spectral region from 10 to
100 cm-! for some II-VI compounds, including ZnSe, have also been measured at 2,80,
and 300 K by Hattori et al. [15].
The refractive-index dispersion in the transparent region of ZnSe has been measured
on bulk samples [5,16] and on epitaxially grown films on GaAs by MBE [17,18].
Measurement techniques used were SE [5,17], prism refraction [16], and transmis-
sion-reflection measurements [17,18]. We show in Fig. D5-2 the n(E) dispersion ob-
tained by Adachi and Taguchi [5] using SE. Shown by the solid line is the theoretical
result of the MDF calculation. (See also Fig. 5.18 in Sec. 5.2.3.)
The temperature coefficient of the refractive index has been determined experimen-
tally by Bertolotti et al. [19]. They obtained the values of dn/dT=(6-20)xlO- s K! for
wavelengths between 20 and 0.5 Ilm. A comprehensive review of the refractive index
for ZnSe (13-ZnS and ZnTe) and its temperature derivatives reported up until 1984 has
also been given by Li [20], who presents the results in a variety of graphical forms. The
hydrostatic-pressure dependence of the refractive index for ZnSe has also been report-
ed by Griebl et al. [21]. They conclude that E_ (=5.9±o.2) is independent of hydrostatic
pressure. However, no reason for this has been discussed in their report.
The fundamental reflectivity near the exciton resonance of ZnSe has been studied
using bulk samples [22-4] or epitaxial ZnSe/GaAs films [25-7]. Studies on the epi-
taxial ZnSe/GaAs films were focused mainly on the effects of residual strains [25-7].
By using a model that included strain as well as excitonic spatial dispersion and ex-
change effects, it was possible to determine the internal biaxial strain, exchange split-
ting, and deformation potentials [27].
Structures at the exciton resonance region of ZnSe have been investigated by meas-
uring absorption spectra of bulk samples [10,22,28] and epitaxial ZnSe/GaAs samples
[29,30]. We reproduce in Fig. D5-3 the absorption spectrum of an MBE-grown
ZnSe/GaAs sample measured at 1.7 K [30]. We can easily recognize the absorption
peaks due to the n=l ground-state and n=2, 3 excited-state excitons. [See also a(E)
3.0
2.9
ZnSe
2.8
c
2.7
2.6
Figure D5·2 n(E) dispersion for
ZnSe measured by SE at 300 K.
Shown by the solid line is the theore-
25 tical result of the MDF calculation.
(From Adachi and Taguchi [5].)
21.
0 3.5
flw ( eV )
8
T =1.7 K
Elc
r- w
:
~---
l~B
2
1 J)k~.'
.. Ul 3.0 3.2
:
: .
~
O~~~·2.·~~~~~~~~~
:
2.78 2.82 2.86
Energy, eV
Figure D5·3 Absorption spectrum at 1.7 K from an epitaxial ZnSe at the exciton resonance
region. The inset shows the part of the spectrum for large values of the photon energies. Also
shown by the dashed line is the PL spectrum. (From Aliev et al. [30].)
spectrum of ZnSe in Fig. S.7 (b) of Sec. S.1.4.] The pressure dependence of the Eo ab-
sorption edge of ZnSe has also been studied by several authors [21,31].
The fundamental reflectivity in the interband transition region of ZnSe has been
measured by a number of groups [lO,32-S]. The KK analysis was performed to extract
(£1'~) and/or (n, k) spectra from the measured R data [lO,34,3S]. The (£1'~) spectra in
the interband transition region have also been determined using SE at room tempera-
ture in the l.S-S.3-eV region by Adachi and Taguchi [S], in the l.6--S.4-eV region by
Jans [36], in the l.S-6.0-eV region by Kim et al. [37], in the l.S-S.0-eV region by
Dahmani et al. [38], in the 1.8-S.5-eV region by Rossow et al. [39], in the 1.S-S.3-eV
region by Kato et al. [40], and in the 1.S-6.0-eV region by Kim and Sivananthan [41].
The measured samples were bulk ZnSe crystal [S] or epitaxial ZnSe/GaAs films
[36-41]. The SE data measured have yielded widely different £ values and spectral
features. It has been shown [40] that the £(E) spectra for as-grown ZnSe are quite dif-
ferent from those for air-exposed ZnSe epilayer, suggesting the fast oxidation of ZnSe
surface. We may, thus, consider that the different £(E) spectra from various labs are
caused by the different ZnSe surface qualities (i.e., different oxide thickness, different
degree of surface roughness, etc.).
Optical properties in the vacuum-UV region (36-1S0 eV) of some II-VI compounds,
including ZnSe, have been studied by Cardona and Haensel [42]. The film used by the-
se authors was obtained by vacuum evaporation on a noncrystalline substrate, and thus
it was polycrystalline. A sharp doublet associated with transitions from the 3p core lev-
els of Zn to the conduction bands was observed for ZnSe, ZnS, and less clearly for
ZnTe.
We list in Table D5-2 the room-temperature values of £=£I+i~, n*=n+ik, a, and R
for ZnSe. A complete set of the optical constants for E::;0.0744 eV were calculated
from the reststrahlen parameters of Deneuville et al. [7]. The absorption and imaginary
constants, a, k, and ~, in the multiphonon region (0.0322::;£::;0.0744 eV) were read
from a graph of Deneuville et al. [7]. The real optical constants, £1 and n, for 0.5::;£::;1.9
eV were taken from Marple [16]. A set of the optical constants determined by SE for
1.95::;£::;5.49987 eV were taken from Adachi and Taguchi [5] and Rossow et al. [39].
A set of the optical constants for 6::;£::;23 eV were taken from Freeouf [34], and a and
k for &2:40 eV were taken from Cardona and Haensel [42].
The (£1' ~), (n, k), a, and R values in Table DS-2 are graphed in Figs. DS-4--D5-7,
2D-exciton peak (Ex). It has been shown [S] that such optical-constant spectra can be
successfully explained by the MDF.
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Commun. 56,479 (1985).
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(1970).
34. J. L. Freeouf, Phys. Rev. B 7,3810 (1973).
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14r-~.-~.-~-.~-.~-.
12
10
8
IAJ 6
4
2
o
-2~~~~~~-L~~~~
o 2 4 6 8 10
Photon energy (eV)
Figure DS-4 £1(E) and £2(E) spectra for ZnSe at 300 K.
4
Eo+.6. o
1 X H 1
E (E) E1+.6. 1
(Ex)
E2
3
EO! !
~ E1'
C
2 I \ !
1 \
ZnSe (\ I ~
1 \ I
1 ,-I
1 k 1
I
I
,.., ",/'
0 2 4 6 8 10
Photon energy (eV)
Figure DS-S neE) and k(E) spectra for ZnSe at 300 K.
ZnSe
10° .- \ ..,
10-1~~~~~~.~1~~~~=L~
10-2 10-1 10° 101 102
Photon energy (eV)
Figure DS-6 ai..E) spectrum for ZnSe at 300 K.
05 ZINC SELENIDE (ZnSe) 467
Table DS-2 Continued (ZnSe).

eV £1 ~ n k a (cm· 1) R
0.0322 0.984 0.245 0.999 0.122 4.00E+02 0.004
0.0335 1.880 0.312 1.376 0.113 3.85E+02 0.027
0.0347 2.543 0.227 1.596 0.071 2.50E+02 0.053
0.0359 3.043 0.216 1.745 0.062 2.25E+02 0.074
0.0372 3.436 0.089 1.854 0.024 9.00E+01 0.090
0.0384 3.750 0.042 1.937 0.011 4.20E+01 0.102
0.0397 4.008 0.028 2.002 0.0071 2.85E+01 0.111
0.0409 4.222 0.025 2.055 0.0061 2.55E+01 0.119
0.0421 4.403 0.028 2.098 0.0066 2.80E+01 0.126
0.0434 4.558 0.030 2.135 0.0070 3.10E+01 0.131
0.0446 4.691 0.037 2.166 0.0086 3.90E+01 0.136
0.0459 4.808 0.042 2.193 0.0097 4.50E+01 0.140
0.0471 4.910 0.035 2.216 0.0080 3.80E+Ol 0.143
0.0483 5.001 0.024 2.236 0.0054 2.65E+01 0.146
0.0496 5.081 0.027 2.254 0.0060 3.00E+01 0.149
0.0508 5.153 0.085 2.270 0.019 9.70E+01 0.151
0.0514 5.186 0.112 2.277 0.025 1.28E+02 0.152
0.0521 5.218 0.078 2.284 0.017 9.00E+01 0.153
0.0533 5.277 0.057 2.297 0.012 6.70E+01 0.155
0.0545 5.330 0.035 2.309 0.0076 4.20E+01 0.156
0.0558 5.378 0.020 2.319 0.0042 2.40E+01 0.158
0.057 5.422 0.0073 2.329 0.0016 9.00E+OO 0.159
0.0583 5.463 0.0044 2.337 0.00093 5.50E+OO 0.161
0.0595 5.500 0.0036 2.345 0.00076 4.60E+00 0.162
0.0607 5.535 0.0029 2.353 0.00062 3.80E+OO 0.163
0.062 5.566 0.0022 2.359 0.00046 2.90E+OO 0.164
0.0632 5.596 0.0014 2.366 0.00030 1.9OE+OO 0.165
0.0645 5.623 O.OOlD 2.371 0.00021 1.40E+OO 0.165
0.0657 5.648 0.00071 2.377 0.00015 l.00E+OO 0.166
0.0669 5.672 0.00060 2.382 0.00013 8.60E-01 0.167
0.0682 5.694 0.00051 2.386 0.00011 7.40E-01 0.168
0.0694 5.715 0.00048 2.391 O.OOOlD 7.lDE-01 0.168
0.0707 5.734 0.00051 2.395 0.00011 7.60E-01 0.169
0.0719 5.753 0.00049 2.398 0.00010 7.50E-01 0.169
0.0731 5.770 0.00043 2.402 0.000089 6.60E-Ol 0.170
0.0744 5.786 0.00038 2.405 0.000080 6.00E-Ol 0.170
0.5 5.936 2.436 0.175
0.6 5.952 2.440 0.175
0.7 5.971 2.444 0.176
0.8 5.994 2.448 0.176
0.9 6.020 2.454 0.177
1.0 6.051 2.460 0.178
1.1 6.086 2.467 0.179
1.2 6.125 2.475 0.180
1.3 6.170 2.484 0.181
1.4 6.220 2.494 0.183
1.5 6.277 2.505 0.184
1.6 6.341 2.518 0.186
1.7 6.413 2.532 0.188
1.8 6.494 2.548 0.190
Table DS·2 Continued (ZnSe).
eV £1 £2 n k a (em-I) R
1.9 6.587 2.566 0.193
1.95 6.60 2.57 0.193
2 6.65 2.58 0.195
2.05 6.71 2.59 0.196
2.1 6.78 2.60 0.198
2.15 6.84 2.62 0.200
2.2 6.91 2.63 0.201
2.25 6.98 2.64 0.203
2.3 7.05 2.66 0.205
2.35 7.12 2.67 0.207
2.4 7.23 2.69 0.210
2.45 7.33 2.71 0.212
2.5 7.45 2.73 0.215
2.55 7.61 2.76 0.219
2.6 7.83 2.80 0.224
2.65 8.17 2.86 0.232
2.7 8.26 1.88 2.89 0.32 8.90E+04 0.242
2.75 7.96 1.71 2.84 0.30 8.40E+04 0.234
2.8 7.93 1.71 2.83 0.30 8.57E+04 0.233
2.85 7.94 1.71 2.83 0.30 8.72E+04 0.234
2.9 8.01 1.75 2.85 0.31 9.04E+04 0.235
2.95 8.07 1.82 2.86 0.32 9.52E+04 0.237
3 8.11 1.93 2.87 0.34 1.02E+05 0.239
3.05 8.16 2.04 2.88 0.35 1.10E+05 0.241
3.1 8.20 2.13 2.89 0.37 1.16E+05 0.243
3.15 8.07 2.21 2.87 0.39 1.23E+05 0.241
3.2 8.14 2.3 2.88 0.40 1.30E+05 0.243
3.214 8.18 2.32 2.89 0.40 1.3IE+05 0.244
3.237 8.22 2.35 2.90 0.41 1.33E+05 0.245
3.26 8.26 2.38 2.90 0.41 1.36E+05 0.246
3.283 8.30 2.41 2.91 0.41 1.38E+05 0.247
3.306 8.34 2.44 2.92 0.42 1.40E+05 0.248
3.328 8.38 2.48 2.93 0.42 1.43E+05 0.249
3.351 8.43 2.51 2.93 0.43 1.45E+05 0.251
3.374 8.47 2.55 2.94 0.43 1.48E+05 0.252
3.397 8.51 2.58 2.95 0.44 1.5IE+05 0.253
3.42 8.55 2.62 2.96 0.44 1.54E+05 0.254
3.443 8.59 2.65 2.97 0.45 1.56E+05 0.255
3.466 8.63 2.70 2.97 0.45 1.60E+05 0.256
3.488 8.68 2.74 2.98 0.46 1.63E+05 0.258
3.511 8.72 2.78 2.99 0.47 1.66E+05 0.259
3.534 8.76 2.82 3.00 0.47 1.69E+05 0.260
3.557 8.80 2.87 3.00 0.48 1.72E+05 0.261
3.58 8.83 2.92 3.01 0.48 1.76E+05 0.262
3.603 8.87 2.97 3.02 0.49 1.79E+05 0.263
3.626 8.91 3.02 3.03 0.50 L83E+05 0.265
3.648 8.95 3.07 3.03 0.51 1.87E+05 0.266
3.671 8.99 3.12 3.04 0.51 1.9IE+05 0.267
3.694 9.05 3.17 3.05 0.52 1.94E+05 0.268
3.717 9.09 3.22 3.06 0.53 1.98E+05 0.270
Table D5·2 Continued (ZnSe).

eV £1 q n k a (em-I) R
3.74 9.13 3.28 3.07 0.53 2.03E+05 0.271
3.763 9.17 3.34 3.08 0.54 2.07E+05 0.272
3.786 9.22 3.40 3.09 0.55 2. 12E+05 0.274
3.808 9.27 3.47 3.10 0.56 2. 16E+05 0.275
3.831 9.31 3.53 3.10 0.57 2.21E+05 0.277
3.854 9.37 3.61 3.12 0.58 2.26E+05 0.279
3.877 9.42 3.67 3.13 0.59 2.31E+05 0.280
3.9 9.47 3.76 3.14 0.60 2.37E+05 0.282
3.923 9.52 3.84 3.15 0.61 2.43E+05 0.283
3.946 9.58 3.92 3.16 0.62 2.48E+05 0.285
3.968 9.63 4.01 3.17 0.63 2.55E+05 0.287
3.991 9.69 4.10 3.18 0.64 2.61E+05 0.289
4.014 9.75 4.19 3.19 0.66 2.67E+05 0.291
4.037 9.81 4.29 3.20 0.67 2.74E+05 0.293
4.06 9.86 4.40 3.21 0.68 2.82E+05 0.295
4.083 9.92 4.51 3.23 0.70 2.90E+05 0.297
4.106 9.97 4.63 3.24 0.72 2.98E+05 0.299
4.128 10.03 4.75 3.25 0.73 3.06E+05 0.301
4.151 10.09 4.89 3.26 0.75 3.15E+05 0.303
4.174 10.14 5.01 3.27 0.76 3.24E+05 0.305
4.197 10.21 5.16 3.29 0.78 3.33E+05 0.308
4.22 10.26 5.30 3.30 0.80 3.43E+05 0.310
4.243 10.32 5.46 3.32 0.82 3.54E+05 0.313
4.266 10.37 5.64 3.33 0.85 3.66E+05 0.316
4.288 1Q.43 5.81 3.34 0.87 3.78E+05 0.318
4.311 10.47 6.00 3.36 0.89 3.90E+05 0.321
4.334 10.49 6.20 3.37 0.92 4.04E+05 0.324
4.357 10.54 6.41 3.38 0.95 4. 19E+05 0.327
4.38 10.59 6.62 3.40 0.97 4.32E+05 0.330
4.403 10.60 6.86 3.41 1.01 4.49E+05 0.333
4.426 10.61 7.13 3.42 1.04 4.68E+05 0.337
4.448 10.63 7.41 3.43 1.08 4.87E+05 0.340
4.471 10.61 7.71 3.44 1.12 5.07E+05 0.344
4.494 10.57 8.06 3.45 1.17 5.3IE+05 0.348
4.517 10.49 8.43 3.46 1.22 5.58E+05 0.353
4.54 10.46 8.81 3.47 1.27 5.83E+05 0.357
4.563 10.25 9.20 3.47 1.33 6.14E+05 0.361
4.586 10.07 9.61 3.46 1.39 6.45E+05 0.366
4.608 9.81 10.01 3.45 1.45 6.78E+05 0.370
4.631 9.43 1Q.42 3.43 1.52 7.14E+05 0.374
4.654 9.03 10.75 3.40 1.58 7.47E+05 0.378
4.677 8.51 11.05 3.35 1.65 7.82E+05 0.381
4.7 7.99 11.22 3.30 1.70 8.11E+05 0.383
4.723 7.36 11.27 3.23 1.75 8.36E+05 0.383
4.746 6.70 11.22 3.14 1.78 8.58E+05 0.382
4.768 6.29 11.04 3.08 1.79 8.66E+05 0.380
4.791 5.96 10.85 3.03 1.79 8.70E+05 0.377
4.814 5.68 10.61 2.98 1.78 8.70E+05 0.373
4.837 5.48 10.43 2.94 1.78 8.70E+05 0.370
4.86 5.30 10.29 2.90 1.77 8.73E+05 0.368
Table DS-2 Continued (ZnSe).

eV £1 £2 n k a (cm·l ) R
4.883 5.16 10.19 2.88 1.77 8.76E+05 0.367
4.906 5.00 10.13 2.85 1.77 8.82E+05 0.366
4.928 4.83 10.06 2.83 1.78 8.89E+05 0.365
4.951 4.62 10.02 2.80 1.79 8.99E+05 0.365
4.974 4.39 9.95 2.76 1.80 9.08E+05 0.365
4.997 4.16 9.85 2.72 1.81 9.15E+05 0.364
5.02 3.94 9.70 2.69 1.81 9.20E+05 0.362
5.043 3.71 9.54 2.64 1.81 9.24E+05 0.361
5.066 3.51 9.34 2.60 1.80 9.24E+05 0.358
5.088 3.34 9.08 2.55 1.78 9.18E+05 0.353
5.111 3.25 8.86 2.52 1.76 9. 12E+05 0.349
5.134 3.19 8.60 2.49 1.73 9.00E+05 0.343
5.157 3.18 8.37 2.46 1.70 8.88E+05 0.338
5.18 3.19 8.18 2.45 1.67 8.78E+05 0.333
5.203 3.25 8.00 2.44 1.64 8.66E+05 0.328
5.226 3.33 7.89 2.44 1.62 8.57E+05 0.324
5.248 3.38 7.74 2.43 1.59 8.47E+05 0.320
5.271 3.39 7.61 2.42 1.57 8.40E+05 0.317
5.294 3.39 7.51 2.41 1.56 8.36E+05 0.314
5.317 3.50 7.45 2.42 1.54 8.29E+05 0.312
5.34 3.54 7.40 2.42 1.53 8.26E+05 0.310
5.363 3.60 7.35 2.43 1.51 8.23E+05 0.308
5.386 3.68 7.32 2.44 1.50 8.20E+05 0.307
5.408 3.76 7.30 2.45 1.49 8.18E+05 0.306
5.431 3.88 7.27 2.46 1.48 8.13E+05 0.305
5.454 4.11 7.24 2.49 1.45 8.03E+05 0.303
5.477 4.24 7.19 2.51 1.43 7.96E+05 0.302
5.5 4.36 7.17 2.52 1.42 7.92E+05 0.301
6 6.8 7.2 2.9 1.2 7.5E+05 0.31
6.25 6.9 10.5 3.1 1.7 l.1E+06 0.37
6.5 1.7 11.6 2.6 2.2 1.5E+06 0.42
6.75 -0.7 8.6 2.0 2.2 1.5E+06 0.42
7 -0.6 6.5 1.7 1.9 1.3E+06 0.37
7.25 -0.5 5.4 1.6 1.7 1.3E+06 0.34
7.5 0.0 4.5 1.5 1.5 l.lE+06 0.29
7.75 0.8 4.3 1.6 1.3 l.1E+06 0.25
8 1.3 4.6 1.7 1.3 l.lE+06 0.25
8.25 1.0 5.6 1.8 1.5 1.3E+06 0.29
8.5 0.1 5.1 1.6 1.6 1.4E+06 0.31
8.75 0.0 5.0 1.6 1.6 1.4E+06 0.31
9 -0.9 4.4 1.3 1.6 1.5E+06 0.34
9.25 -1.0 3.8 1.2 1.6 1.5E+06 0.34
9.5 -1.0 3.4 1.1 1.5 1.5E+06 0.34
9.75 -1.0 3.1 1.1 1.5 1.4E+06 0.33
10 -0.9 2.7 1.0 1.4 1.4E+06 0.32
10.5 -0.4 2.2 1.0 1.2 1.2E+06 0.26
11 0.0 2.0 1.0 1.0 l.lE+06 0.20
11.5 0.1 1.9 1.0 0.9 l.lE+06 0.18
11.75 0.2 1.9 1.0 0.9 l.1E+06 0.17
12 0.4 1.9 1.1 0.9 l.lE+06 0.15
Table DS·2 Continued (~nSe).

eV EI ~ n k ex. (em' I) R
12.25 0.2 2.0 1.0 0.9 1.2E+06 0.18
12.5 0.2 2.0 1.0 0.9 1.2E+06 0.18
13 0.0 1.9 1.0 1.0 1.3E+06 0.19
13.5 0.0 1.6 0.9 0.9 1.2E+06 0.18
14 0.1 1.4 0.9 0.8 1.2E+06 0.16
15 0.2 1.2 0.8 0.7 l.1E+06 0.14
20 1.0 0.7 1.1 0.3 6.6E+05 0.025
23 1.0 0.6 1.0 0.3 6.9E+05 0.021
38 0.037 1.42E+05
40 0.035 1.43E+05
45 0.033 1.49E+05
50 0.032 1.60E+05
55 0.033 1.82E+05
58 0.034 1.99E+05
60 0.033 2.03E+05
62 0.031 1.96E+05
64 0.030 1.93E+05
66 0.028 1.89E+05
68 0.028 1.90E+05
70 0.027 1.91E+05
75 0.026 1.95E+05
80 0.025 2.0 1E+05
85 0.024 2.09E+05
88 0.024 2.16E+05
89 0.025 2.23E+05
90 0.028 2.56E+05
90.5 0.029 2.62E+05
91 0.028 2.59E+05
91.5 0.027 2.54E+05
92 0.027 2.55E+05
93 0.028 2.64E+05
94 0.027 2.59E+05
96 0.025 2.46E+05
97 0.025 2.47E+05
98 0.025 2.49E+05
100 0.025 2.55E+05
110 0.024 2.70E+05
120 0.022 2.70E+05
130 0.020 2.62E+05
140 0.017 2,47E+05
150 0.015 2.27E+05
06 ZINC TELLURIDE
(ZnTe)

Zinc telluride (ZnTe) is a wide-band-gap II-VI semiconductor (Eg=2.25 eV at 300 K)
crystallizing in the cubic, zinc-blende structure. This material is promising for applica-
tion as a purely green light-emitting diode. Most wide-band-gap II-VI semiconductors
can be easily doped n type, but resist p-type doping. The most notable exception is
ZnTe which is easily doped p type, but not n type. It is, thus, quite a challenge to
achieve n-type doping of ZnTe. Recently, successful growth of low-resistivity (as low
as 0.1-0.3 Q·cm) n-type ZnTe epitaxial layers has been achieved by MOCVD on
Bridgman-grown (lOO)ZnTe substrates with the use of triethylaluminium as the dopant
[1]. This result may be encouraging in the search for various optoelectronic devices
based on ZnTe.

The electronic energy-band structure of ZnTe was investigated theoretically by several
groups (see, e.g., Refs. [2-5]). We reproduce in Fig. D6-1 the electronic energy-band
structure of ZnTe as calculated with the EPM by Walter et al. [2]. Table D6-1lists the
CP energies in ZnTe determined experimentally [6-9].
ZnTe is a direct-band-gap semiconductor occurring at the r point in the BZ. The
lowest-direct-band-gap energies Eo and Eo+6.0 of ZnTe are, respectively, 2.25 eV [rs
(rIS)~r6 (rl )] and 3.20 eV [r7 (rIS)~r6 (rl )) at 300 K.
The higher interband transition energies E I , EI+~I' and Eo' are, respectively, 3.78 eV
[A4 •S (A3)~A6 (AI) or L4 •S ("L.J)~L6 (LI)], 4.34 eV [A6 (A3)~A6 (AI) or L6 ("L.J)~L6
(L I»), and 4.92 eV [rs (rIS)~r7 (rls )] at room temperature. The theoretical values of
these gaps are 4.08 eV ("L.J~LI) and 6.02 eV (rIS~rI5) [3]. Note that the optical spec-
tra at the Ed(EI+~I) region of ZnTe [7-9] are much sharper than those in some III-V
(and group-IV elemental) semiconductors (see, e.g., Refs. [10,11]). Such spectral fea-
ture cannot be explained within the framework of the one-electron approximation. This
fact clearly suggests a contribution of the excitonic effects (i.e., 2D-exciton effects) in
this spectral region. The MDF analysis enabled us to determine the 2D-exciton binding
energies, G/ D_Gt,2D_0.19 eV [7].
The E2 , EI ', and EI '+~I peaks have been identified in ZnTe at 5.30 eV [X7 (X5)~X6
(XI)]' -6.8 eV [L4 •5 ("L.J)~L6 (L3)]' and -7.5 eV [L6 (L3)~L6 (L3)]' respectively. The
473
4
>Q.I
60::
W
Z
w
-2 Ls
U,K
N r
Figure D6·1 Electronic energy-band structure of ZnTe as calculated with the EPM. (From
Walter et al. [2].) The locations of several interband transitions are included by the vertical
arrows.
TABLE D6·1 Energies a/the CPs in the optical spectra o/ZnTe at 300 K.
CPs eV
Eo 2.25
Eo+1lo 3.20
El 3.78
El+l'1, 4.34
Eo' 4.92
E2 5.30
E,' -6.8
E,'+L'1, -7.5
theoretically obtained these CPs are 4.93 eV (X5~X,) and 7.81 eV (l-:J~l-:J) [3].

Optical properties in the reststrahlen region of ZnTe have been studied by several
authors [12-14]. These studies report a set of the reststrahlen parameters which enable
to calculate the optical dispersion in this spectral region. The static and high-frequency
D6 ZINC TELLURIDE (ZnTe) 475
dielectric constants reported by Manabe et al. [12] are e.=9.1 and e~=6.7 at 100 and
300 K, while those obtained by Hadni et al. [13] are e.=8.3 and e~=6.1 at 80 K and
e,=8.3 and E~=6.2 at 290 K.
The refractive-index dispersion in the transparent region of ZnTe has been measured
on bulk samples [8,15] and on epitaxial films grown on GaAs by MOCVD [16]. Meas-
urement techniques used were SE [8], prism refraction [15], and transmission meas-
urements [16]. The n(E) data measured by SE [8] and prism refraction method [15] are
shown in Fig. 5.21 (Sec. 5.2.3) by the solid and open circles, respectively.
A comprehensive review of the refractive index for ZnTe (~-Zns and ZnSe) and its
temperature derivatives reported up until 1984 has been given by Li [17], who presents
the results in a variety of graphical forms. The n value at the MBE growth temperature
(286°C) has also been determined to be n=2.51 (1..=632.8 nm) [18]. The hydrostatic-
pressure dependence of the refractive index for ZnTe has been reported by Lindner et
al. [16] for pressures up to 12 GPa. We have already shown their obtained results in
Fig. 5.28 (Sec. 5.2.3). They also reported the hydrostatic-pressure dependence of E" e~,
and exciton Rydberg energy [16].
The fundamental absorption edge structure of ZnTe has been studied by measuring
absorption spectra of bulk samples [19,20] and epitaxial ZnTe films grown On GaAs
[16,21]. We show in Fig. D6-2 the absorption spectrum of an epitaxial ZnTe/GaAs film
measured at 2 K [21]. The absorption peaks observed in the figure correspond to the
n=1 HH (-2.396 eV), n=2 HH (-2.406 eV), and n=1 LH excitons (-2.45 eV). The
splitting into an HH-LH exciton structure was due to the biaxial strain caused by the
12 I I I I
_10
ZnTe
'";"e
..,.() 8 ..
-....
0
c
o
6
..
j4 +' ~'- fI b' ft."",
« 2
+
.. /
..
...,
o -/. I I I I
2380 2400 2420 2440 2460 2480
Energy (meY)
Figure D6-2 Absorption spectrum at 2 K from an epitaxial ZnTe at the exciton resonance re-
gion. The absorption peaks correspond to the n=l HH (-2.396 eV), n=2 HH (-2.406 eV), and
n=l LH excitons (-2.45 eV). The splitting into an HH-LH exciton structure is due to the biaxi-
al strain caused by the different thennal expansion of glass, glue, and ZnTe. (From Leiderer et
al. [21].)
476 ll-VI SEMICONDUCTORS
different thermal expansion of glass, glue, and ZnTe. The dependence of the Eo ab-
sorption edge of ZnTe on hydrostatic pressure has also been reported by Lindner et aZ.
[16]. The fundamental reflectivity near the Eo-edge exciton resonance of ZnTe has been
reported by a number of authors [19,21,23,24]. The samples used in these studies were
bulk ZnTe crystals [19,23,24] and MOVPE-grown ZnTe film [21].
The fundamental reflectivity spectra in the interband transition region of ZnTe have
been measured by several authors [2,6,25,26]. By performing the KK analysis, the (n,
k) or (£" ~ values were extracted in the 0-20-eV region (T=297 K) [25] and in the 0-
24-eV region (T=300 K) [26]. The CPs observed in these studies were correlated with
various electronic transitions in the BZ [2,6,26].
A set of the optical constants for ZnTe at 300 K have been determined using SE in
the 1.5-5.6-eV spectral region by Sato and Adachi [8] and in the 1.5-5.4-eV region by
Castaing et aZ. [27]. The bulk ZnTe single crystals used were grown by the Bridgman
method, and not intentionally doped. The measured SE data revealed distinct structures
at energies of the Eo, E" E,+Ll" and Ez CPs. Chemical treatment effects on the pseudo-
dielectric function of epitaxial ZnTe films grown on (lOO)GaAs by MBE were also
studied by Kim et at. [28] using SE.
Optical absorption spectra in the vacuum-UV region (36-150 eV) of some II-VI
compounds, including ZnTe, have been reported by Cardona and Raensel [29]. The
film used by these authors was obtained by vacuum evaporation on a noncrystalline
substrate, and thus it was polycrystalline. A sharp doublet associated with transitions
from the 3p core levels of Zn to the conduction bands was observed for ZnSe, ZnS, and
less clearly for ZnTe, at -90 e V.
More recently, Guo et aZ. [30] have measured the reflectance spectra in the 15-155-
eV region of ZnTe. A set of the optical constants have been determined on the basis of
the KK analysis. Fine structures related to the Zn 3d and Te 4d core levels have been
identified at -20 and 40 eV, respectively. KisIel et aZ. [31] also reported the reflectivity
spectra of some II-VI compounds, including ZnTe, in the region of d-core transitions.
The sharp structures above approximately 10 eV were interpreted as transitions origi-
nating in the metal uppermost d levels.
Table D6-2 lists the room-temperature values of £=£,+iEz, n*=n+ik, a, and R for
ZnTe. A complete set of the optical constants for E::;;0.04 eV were obtained from the
reststrahlen parameters of Manabe et aZ. [12]. The real optical constants, £, and n, for
0.5::;;£::;;1.4 eV were taken from Marple [15]. A set of the optical constants for
1.505::;;£::;;5.586 eV were taken from Sato and Adachi [8], while those for 5.75::;;£::;;10
eV were obtained from Freeouf [26]. The optical constants for 15::;;£::;;155 eV were ob-
tained from Guo et at. [30].
The (£" ~, (n, k), a, and R values in Table D6-2 are graphed in Figs. D6-3-D6-6,
2D-exciton peak (Ex). The MDF analysis [7-9] suggested that the EJ(Eo+l1o) structures
can be characterized by a 3D Mo CP, the E,/(E,+Ll,) structures by a 3D M, (or 2D Mo)
CP, and the Eo' and Ez structures by a DRO (a broadened 2D M, CP).
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15. D. T. F. Marple, l. Appl. Phys. 35,539 (1964).
16. M. Lindner, G. F. SchOtz, P. Link, H. P. Wagner, W. Kuhn, and W. Gebhardt, l.
Phys.: Condens. Matter 4,6401 (1992).
17. H. H. Li, l. Phys. Chern. Ref Data 13, 103 (1984).
18. G. J. Glanner, H. Sitter, W. Faschinger, and M. A. Herman, Appl. Phys. Lett. 65,
998 (1994).
19. E. Loh and R. Newman, l. Phys. Chern. Solids 21, 324 (1961).
20. G. N. Aliev, N. P. Gavaleshko, O. S. Koshchug, V. I. Pleshko, R. P. Seisyan, and
K. D. Sushkevich, Sov. Phys. Solid State 34, 1286 (1992).
21. H. Leiderer, A. Supritz, M. Silberbauer, M. Lindner, W. Kuhn, H. P. Wagner, and
W. Gebhardt, Sernicond. Sci. Technol. 6, A101 (1991).
22. H. Mayer, U. Rossler, and M. Ruff, Phys. Rev. B 47, 12929 (1993).
23. M. V. Kurikand V. S. Manzhara,Sov. Phys. Solid State 18, 1445 (1976).
24. V. V. Sobolev, V. I. Donetskikh, and E. F. Zagainov, Sov. Phys. Sernicond. 12,
646 (1978).
25. M. Cardona,J. Appl. Phys. 36, 2181 (1965).
27. O. Castaing, J. T. Benhlal, R. Granger, and R. Triboulet, l. Phys. I (France) 6,
907 (1996).
28. Y. D. Kim, S. G. Choi, M. V. Klein, S. D. Yoo, D. E. Aspnes, S. H. Xin, and J. K.
Furdyna, Appl. Phys. Lett. 70, 610 (1997).
30. Q. Guo, M. Ikejira, M. Nishio, and H. Ogawa, Solid State Commun. 100, 813
(1996); Q. Guo, private communication (1996).
31. A. KisIel, M. Zimnal-Starnawska, F. Antonangeli, M. Piacentini, and N. Zema,
Nuovo Cimento D 8, 436 (1986).
_8L---J----L--~--~~~
o 2 4 6 8 10
Photon energy (eV)
Figure D6-3 1:.1(E) and 1:.2(E) spectra for ZnTe at 300 K.
5~--~--~----~--~--~
E1 (EX)!
E 1+A 1 (Ex)
4
! !
E2
ZnTe
3 n
E1' E '+A
..::t::.
C
I 1! 1 1
I
2 1\1
,'J
I
k I
1 I
I
I
,,'
o 246 8 10
Photon energy (eV)
Figure D6-4 nCE) and k(E) spectra for ZnTe at 300 K.
ZnTe
...,
•• 1
10- 1 10° 10 1 102

Photon energy (eV)
Figure D6·5 acE) spectrum for ZnTe at 300 K.
0.7
0.6 ! E2
E1+lI. 1(Ex)
0.5 E1(EX)! !
a: 0.4
1:01
0.3
0.2 ZnTe
0.1 0
2 4 6 8 10
Photon energy (eV)
Figure D6·6 R(E) spectrum for ZnTe at 300 K.
Table D6-2 Optical constants oJZnTe at 300 K.

eV £\ £Z n k a (cm'\) R
0.01 9.720 0.029 3.118 0.0047 4.76E+00 0.265
0.014 10.72 0.073 3.274 0.011 1.57E+01 0.283
0.018 13.86 0.297 3.724 0.040 7.28E+01 0.333
0.019 15.96 0.525 3.995 0.066 1.26E+02 0.360
0.02 20.06 1.155 4.481 0.129 2.61E+02 0.404
0.0205 24.03 2.003 4.906 0.204 4.24E+02 0.438
0.021 31.49 4.264 5.624 0.379 8.07E+02 0.489
0.0215 49.68 14.13 7.118 0.993 2. 16E+03 0.574
0.0216 56.49 19.95 7.629 1.307 2.86E+03 0.599
0.0217 64.94 29.83 8.259 1.806 3.97E+03 0.629
0.0218 74.10 47.75 9.007 2.651 5.86E+03 0.664
0.0219 77.16 80.72 9.717 4.154 9.22E+03 0.706
0.022 49.54 127.1 9.644 6.592 1.47E+04 0.754
0.02205 16.52 140.6 8.890 7.906 1.77E+04 0.778
0.0221 -19.98 135.7 7.654 8.864 1.99E+04 0.800
0.0222 -60.05 91.73 4.979 9.211 2.07E+04 0.835
0.0223 -61.36 54.16 3.200 8.462 1.9IE+04 0.857
0.0225 -43.81 21.90 1.607 6.812 1.55E+04 0.879
0.023 -19.86 5.427 0.603 4.497 1.05E+04 0.894
0.0235 -10.83 2.360 0.356 3.310 7.89E+03 0.889
0.024 -6.262 1.308 0.260 2.516 6.12E+03 0.869
0.0245 -3.529 0.828 0.219 1.891 4.70E+03 0.827
0.025 -1.714 0.571 0.215 1.327 3.36E+03 0.734
0.026 0.542 0.317 0.765 0.207 5.47E+02 0.031
0.028 2.774 0.139 1.666 0.042 1.18E+02 0.063
0.03 3.875 0.077 1.969 0.020 5.94E+01 0.106
0.04 5.651 0.014 2.377 0.0030 1.21E+01 0.166
0.5 7.323 2.706 0.212
0.6 7.357 2.712 0.213
0.7 7.397 2.720 0.214
0.8 7.445 2.728 0.215
0.9 7.500 2.739 0.216
1 7.564 2.750 0.218
1.1 7.638 2.764 0.220
1.2 7.723 2.779 0.222
1.3 7.819 2.796 0.224
1.4 7.928 2.816 0.226
1.505 8.176 2.859 0.232
1.606 8.364 2.892 0.236
1.708 8.541 2.922 0.240
1.808 8.750 2.958 0.245
1.908 8.980 2.997 0.250
2.01 9.259 3.043 0.255
2.029 9.324 3.054 0.257
2.05 9.412 3.068 0.258
2.07 9.481 3.079 0.260
2.091 9.565 3.093 0.261
2.112 9.648 3.106 0.263
2.131 9.717 3.117 0.264
2.153 9.827 3.135 0.267
Table D6-2 Continued (ZnTe).

eV 1::\ 1::2 n k a (em-I) R
2.172 9.921 3.150 0.268
2.187 9.974 3.158 0.269
2.195 10.05 3.170 0.271
2.202 10.12 3.181 0.272
2.21 10.14 3.184 0.273
2.218 10.19 3.192 0.273
2.226 10.20 3.194 0.274
2.234 10.27 3.204 0.275
2.242 10.33 3.214 0.276
2.25 10.36 3.219 0.277
2.259 10.38 3.222 0.277
2.267 10,42 3.228 0.278
2.275 10.47 0.828 3.238 0.1279 2.95E+04 0.280
2.284 10.45 0.944 3.236 0.1459 3.38E+04 0.279
2.292 10.48 1.061 3.241 0.1636 3.80E+04 0.280
2.301 10.50 1.177 3.245 0.1813 4.23E+04 0.281
2.309 10.45 1.214 3.239 0.1874 4.39E+04 0.280
2.318 10.47 1.285 3.241 0.1982 4.66E+04 0.281
2.326 10.46 1.293 3.241 0.1995 4.71E+04 0.281
2.335 10.47 1.310 3.241 0.2021 4.78E+04 0.281
2.344 10.48 1.319 3.244 0.2033 4.83E+04 0.281
2.353 10.48 1.323 3.243 0.2040 4.87E+04 0.281
2.375 10.50 1.331 3.246 0.2050 4.94E+04 0.281
2.394 10.48 1.568 3.246 0.2416 5.86E+04 0.282
2.412 10.49 1.597 3.248 0.2458 6.01E+04 0.282
2.436 10.54 1.614 3.256 0.2479 6. 12E+04 0.283
2.455 10.59 1.538 3.262 0.2357 5.87E+04 0.284
2.475 10.65 1.463 3.271 0.2236 5.61E+04 0.285
2.495 10.69 1.501 3.278 0.2290 5.79E+04 0.286
2.515 10.70 1.691 3.282 0.2576 6.57E+04 0.287
2.536 10.74 1.765 3.289 0.2683 6.9OE+04 0.288
2.557 10.79 1.819 3.296 0.2759 7. 15E+04 0.289
2.578 10.85 1.806 3.306 0.2732 7.14E+04 0.290
2.594 10.90 1.853 3.313 0.2797 7.36E+04 0.291
2.616 10.95 1.934 3.322 0.2911 7.72E+04 0.292
2.638 11.02 1.921 3.333 0.2882 7.7IE+04 0.293
2.655 11.08 1.944 3.341 0.2910 7.83E+04 0.294
2.678 11.15 1.967 3.352 0.2934 7.97E+04 0.295
2.696 11.20 2.049 3.360 0.3049 8.33E+04 0.296
2.719 11.29 2.071 3.375 0.3068 8.46E+04 0.298
2.737 11.33 2.217 3.381 0.3278 9.IOE+04 0.299
2.756 11.39 2.235 3.391 0.3295 9.21E+04 0.300
2.78 11.47 2.372 3.405 0.3483 9.82E+04 0.302
2.799 11.58 2.339 3.419 0.3420 9.7IE+04 0.304
2.818 11.66 2.317 3.432 0.3376 9.65E+04 0.305
2.838 11.70 2.511 3.440 0.3649 1.05E+05 0.307
2.857 11.79 2.512 3.453 0.3637 1.05E+05 0.308
2.877 11.90 2.547 3.469 0.3672 1.07E+05 0.310
2.897 11.97 2.671 3.480 0.3837 1.13E+05 0.312
2.918 12.07 2.750 3.496 0.3933 1.16E+05 0.313
Table D6·2 Continued (ZnTe).

eV 10 1 Ez n k ex. (em-I) R
2.938 12.18 2.799 3.512 0.3985 1.19E+05 0.315
2.959 12.26 2.928 3.527 0.4151 1.25E+05 0.317
2.981 12.39 2.991 3.544 0.4219 1.28E+05 0.319
3.002 12.48 3.159 3.561 0.4436 1.35E+05 0.322
3.024 12.61 3.260 3.581 0.4552 1.40E+05 0.324
3.039 12.70 3.343 3.594 0.4651 1.43E+05 0.326
3.047 12.72 3.426 3.598 0.4760 1.47E+05 0.327
3.062 12.83 3.444 3.614 0.4765 1.48E+05 0.328
3.077 12.92 3.546 3.627 0.4888 1.52E+05 0.330
3.092 13.02 3.618 3.643 0.4966 1.56E+05 0.332
3.108 13.12 3.732 3.658 0.5101 1.6IE+05 0.334
3.123 13.22 3.876 3.674 0.5275 1.67E+05 0.336
3.139 13.33 3.986 3.691 0.5400 1.72E+05 0.338
3.155 13.40 4.197 3.704 0.5665 1.81E+05 0.340
3.171 13.52 4.301 3.722 0.5778 1.86E+05 0.342
3.188 13.66 4.401 3.742 0.5880 1.9OE+05 0.344
3.204 13.74 4.634 3.758 0.6165 2.ooE+05 0.347
3.221 13.86 4.787 3.777 0.6337 2.07E+05 0.349
3.238 13.97 4.980 3.794 0.6563 2.15E+05 0.352
3.255 14.07 5.210 3.812 0.6834 2.25E+05 0.355
3.272 14.22 5.342 3.835 0.6%6 2.31E+05 0.357
3.289 14.30 5.611 3.851 0.7285 2.43E+05 0.360
3.307 14.46 5.803 3.876 0.7486 2.51E+05 0.363
3.324 14.56 6.118 3.895 0.7853 2.65E+05 0.366
3.351 14.73 6.574 3.929 0.8367 2.84E+05 0.371
3.37 14.86 6.950 3.953 0.8790 3.00E+05 0.375
3.388 14.97 7.324 3.978 0.9206 3. 16E+05 0.379
3.407 15.05 7.739 3.998 0.%79 3.34E+05 0.383
3.425 15.12 8.212 4.021 1.0212 3.55E+05 0.387
3.444 15.17 8.727 4.042 1.0796 3.77E+05 0.392
3.473 15.14 9.643 4.067 1.1855 4. 17E+05 0.399
3.493 14.99 10.32 4.074 1.2668 4.49E+05 0.404
3.513 14.71 11.06 4.069 1.3589 4.84E+05 0.409
3.533 14.26 11.82 4.048 1.4602 5.23E+05 0.414
3.553 13.58 12.53 4.004 1.5650 5.64E+05 0.417
3.573 12.82 13.03 3.944 1.6516 5.98E+05 0.419
3.594 11.87 13.34 3.855 1.7301 6.30E+05 0.420
3.615 10.88 13.36 3.749 1.7813 6.53E+05 0.417
3.636 9.999 13.08 3.637 1.7975 6.63E+05 0.412
3.647 9.675 12.89 3.591 1.7944 6.63E+05 0.409
3.669 9.134 12.39 3.502 1.7691 6.58E+05 QAOI
3.69 8.845 11.85 3.438 1.7240 6.45E+05 0.393
3.713 8.726 11.40 3.397 1.6772 6.3IE+05 0.386
3.735 8.725 11.04 3.376 1.6346 6. 19E+05 0.381
3.758 8.796 10.79 3.370 1.6005 6.10E+05 0.378
3.769 8.833 10.71 3.370 1.5888 6.07E+05 0.377
3.792 8.962 10.60 3.380 1.5684 6.03E+05 0.375
3.815 9.042 10.59 3.389 1.5628 6.05E+05 0.375
3.839 9.116 10.63 3.400 1.5626 6.08E+05 0.376
3.851 9.148 10.66 3.406 1.5653 6. 11E+05 0.377

eV £1 £2 n k a (cm· 1) R
3.875 9.195 10.78 3.418 1.5768 6. 19E+05 0.379
3.899 9.214 10.93 3.428 1.5939 6.30E+05 0.381
3.912 9.215 11.01 3.433 1.6031 6.36E+05 0.382
3.937 9.182 11.21 3.440 1.6294 6.50E+05 0.385
3.962 9.141 11.45 3.449 1.6603 6.67E+05 0.388
3.974 9.084 11.59 3.450 1.6790 6.77E+05 0.390
4 8.984 11.88 3.455 1.7186 6.97E+05 0.394
4.013 8.874 12.04 3.452 1.7434 7.09E+05 0.396
4.039 8.654 12.38 3.447 1.7962 7.36E+05 DA01
4.066 8.344 12.72 3.432 1.8534 7.64E+05 0.405
4.079 8.175 12.86 3.422 1.8796 7.77E+05 0.407
4.106 7.747 13.12 3.390 1.9352 8.06E+05 0.411
4.12 7.498 13.23 3.370 1.9636 8.20E+05 0.413
4.147 6.951 13.35 3.317 2.0125 8.46E+05 0.415
4.161 6.597 13.37 3.279 2.0383 8.60E+05 0.416
4.175 6.293 13.34 3.244 2.0566 8.7IE+05 0.417
4.189 5.993 13.26 3.205 2.0684 8.78E+05 0.416
4.203 5.729 13.17 3.169 2.0773 8.85E+05 0.416
4.218 5.496 13.03 3.133 2.0786 8.89E+05 0.414
4.232 5.266 12.86 3.095 2.0774 8.9IE+05 0.413
4.247 5.086 12.69 3.062 2.0714 8.92E+05 0.411
4.261 4.947 12.51 3.033 2.0617 8.91E+05 0.409
4.276 4.835 12.32 3.006 2.0490 8.88E+05 0.406
4.291 4.750 12.14 2.982 2.0357 8.86E+05 0.404
4.306 4.720 11.98 2.966 2.0197 8.82E+05 0.401
4.321 4.672 11.82 2.948 2.0047 8.78E+05 0.399
4.336 4.648 11.67 2.933 1.9892 8.74E+05 0.396
4.351 4.665 11.56 2.926 1.9744 8.71E+05 0.394
4.366 4.669 11.44 2.917 1.9599 8.68E+05 0.392
4.382 4.727 11.35 2.918 1.9455 8.64E+05 0.390
4.397 4.732 11.25 2.910 1.9332 8.62E+05 0.388
4.413 4.763 11.20 2.910 1.9248 8.6IE+05 0.387
4.429 4.779 11.16 2.909 1.9190 8.62E+05 0.386
4.444 4.819 11.13 2.911 1.9122 8.62E+05 0.386
4.46 4.861 11.11 2.914 1.9058 8.62E+05 0.385
4.477 4.871 11.10 2.915 1.9040 8.64E+05 0.385
4.493 4.906 11.10 2.919 1.9018 8.66E+05 0.385
4.509 4.925 11.12 2.923 1.9019 8.69E+05 0.385
4.526 4.946 11.14 2.927 1.9026 8.73E+05 0.385
4.542 4.953 11.17 2.930 1.9055 8.77E+05 0.386
4.559 5.003 11.21 2.939 1.9066 8.81E+05 0.386
4.576 4.977 11.25 2.939 1.9131 8.87E+05 0.387
4.593 4.985 11.30 2.944 1.9188 8.93E+05 0.388
4.61 4.999 11.36 2.950 1.9247 8.99E+05 0.389
4.627 5.021 11.43 2.959 1.9321 9.06E+05 0.390
4.644 4.997 11.50 2.961 1.9421 9. 14E+05 0.391
4.662 5.015 11.61 2.971 l.9528 9.23E+05 0.393
4.679 5.005 11.69 2.976 1.9630 9.3IE+05 0.395
4.697 4.964 1l.77 2.978 1.9765 9.41E+05 0.396
4.715 4.960 11.88 2.986 1.9895 9.5IE+05 0.398

eV £1 £2 n k a (cm· l ) R
4.733 4.908 11.99 2.989 2.0064 9.63E+05 0.400
4.751 4.868 12.11 2.993 2.0226 9.74E+05 0.402
4.769 4.822 12.24 2.998 2.0409 9.87E+05 0.405
4.788 4.744 12.36 2.998 2.0607 1.ooE+06 0.407
4.806 4.730 12.52 3.009 2.0801 1.01E+06 0.410
4.825 4.625 12.66 3.008 2.1035 1.03E+06 0.413
4.844 4.510 12.80 3.007 2.1283 1.05E+06 0.416
4.863 4.417 12.96 3.009 2.1534 1.06E+06 0.419
4.882 4.350 13.16 3.017 2.1803 1.08E+06 0.422
4.901 4.169 13.30 3.009 2.2096 1.10E+06 0.426
4.921 4.010 13.46 3.004 2.2396 1.12E+06 0.429
4.94 3.882 13.64 3.005 2.2692 1.14E+06 0.433
4.96 3.626 13.76 2.988 2.3027 1.16E+06 0.436
4.98 3.467 13.96 2.987 2.3359 1.18E+06 0.440
5 3.270 14.13 2.981 2.3701 1.20E+06 0.445
5.02 2.958 14.26 2.960 2.4091 1.23E+06 0.449
5.041 2.770 14.47 2.958 2.4452 1.25E+06 0.453
5.061 2.524 14.63 2.947 2.4823 1.27E+06 0.458
5.082 2.117 14.71 2.914 2.5246 1.30E+06 0.463
5.103 1.807 14.85 2.895 2.5645 1.33E+06 0.468
5.124 1.501 15.03 2.881 2.6080 1.35E+06 0.473
5.145 1.036 15.03 2.837 2.6483 1.38E+06 0.478
5.167 0.617 15.08 2.803 2.6907 1.41E+06 0.483
5.188 0.244 15.16 2.775 2.7310 1.44E+06 0.489
5.21 -0.224 15.13 2.730 2.7707 1.46E+06 0.494
5.232 -0.662 15.09 2.687 2.8075 1.49E+06 0.500
5.254 -1.139 14.91 2.629 2.8369 1.51E+06 0.504
5.277 -1.597 14.77 2.575 2.8682 1.53E+06 0.510
5.299 -2.011 14.64 2.526 2.8969 1.56E+06 0.515
5.322 -2.384 14.56 2.487 2.9270 1.58E+06 0.520
5.345 -2.790 14.28 2.424 2.9442 1.60E+06 0.524
5.368 -3.136 14.01 2.368 2.9573 1.61E+06 0.528
5.391 -3.485 13.57 2.294 2.9576 1.62E+06 0.532
5.415 -3.730 13.16 2.230 2.9504 1.62E+06 0.534
5.439 -3.936 12.83 2.178 2.9460 1.62E+06 0.536
5.463 -4.143 12.47 2.121 2.9395 1.63E+06 0.538
5.487 -4.252 12.08 2.068 2.9206 1.62E+06 0.539
5.511 -4.374 11.84 2.031 2.9153 1.63E+06 0.541
5.536 -4.362 11.34 1.974 2.8736 1.6IE+06 0.538
5.561 -4.314 11.00 1.937 2.8401 1.60E+06 0.536
5.586 -4.201 10.74 1.915 2.8048 1.59E+06 0.532
5.75 -3.40 7.44 1.55 2.41 1.40E+06 0.496
6 -1.95 5.98 1.47 2.03 1.24E+06 0.424
6.25 -0.80 5.67 1.57 1.81 1.14E+06 0.364
6.5 -0.05 6.08 1.74 1.75 1.15E+06 0.342
6.75 -0.60 6.82 1.77 1.93 1.32E+06 0.379
7 -1.25 5.82 1.53 1.90 1.35E+06 0.388
7.25 -1.15 5.58 1.51 1.85 1.36E+06 0.379
7.5 -1.95 4.96 1.30 1.91 1.45E+06 0.418
7.75 -1.95 4.22 1.16 1.82 1.43E+06 0.417

eV £1 £2 n k a (em·1) R
8 -1.70 3.88 1.13 1.72 1AOE+06 0.398
8.5 -1.60 3.22 1.00 1.61 1.39E+06 0.394
9 -1.15 2.54 0.91 lAO 1.28E+06 0.353
9.5 -1.00 2.17 0.83 1.30 1.25E+06 0.341
10 -0.70 1.86 0.80 1.16 1.18E+06 0.301
15 0.180 1.807 0.999 0.904 1.38E+06 0.170
1504 0.222 1.626 0.965 0.842 1.3IE+06 0.155
15.8 0.245 1.505 0.941 0.800 1.28E+06 0.146
16.2 0.304 1.363 0.922 0.739 1.2IE+06 0.l30
16.6 0.372 1.322 0.934 0.707 1.19E+06 0.119
17 00411 1.297 0.941 0.689 1.19E+06 0.1l3
1704 00421 1.284 0.942 0.682 1.20E+06 0.111
17.8 00405 1.261 0.930 0.678 1.22E+06 0.111
18.2 0.374 1.229 0.911 0.675 1.25E+06 0.113
18.6 0.341 1.173 0.884 0.664 1.25E+06 0.114
19 0.323 1.095 0.856 0.640 1.23E+06 0.112
19.5 0.325 1.010 0.833 0.607 1.20E+06 0.106
20 0.332 0.937 0.814 0.575 1.17E+06 0.101
21 0.366 0.791 0.787 0.503 1.07E+06 0.087
22 00415 0.681 0.779 00437 9.75E+05 0.072
23 00474 0.597 0.786 0.379 8.85E+05 0.057
24 0.518 0.533 0.794 0.336 8. 17E+05 0.047
25 0.558 0.501 0.809 0.310 7.85E+05 0.039
26 0.581 00450 0.811 0.277 7.30E+05 0.034
27 0.607 0.398 0.816 0.244 6.67E+05 0.Q28
28 0.637 0.351 0.826 0.212 6.03E+05 0.022
29 0.670 0.314 0.840 0.187 5A9E+05 0.018
30 0.701 0.277 0.853 0.163 4.95E+05 0.014
31 0.731 0.244 0.867 0.141 4A2E+05 0.011
32 0.775 0.216 0.889 0.121 3.93E+05 0.0076
33 0.810 0.198 0.907 0.109 3.65E+05 0.0057
34 0.843 0.187 0.924 0.101 3A9E+05 0.0043
35 0.868 0.180 0.937 0.096 3 AOE+05 0.0035
36 0.897 0.169 0.951 0.089 3.24E+05 0.0027
37 0.925 0.165 0.966 0.085 3.20E+05 0.0022
38 0.953 0.167 0.980 0.085 3.28E+05 0.0020
39 0.977 0.179 0.992 0.090 3.57E+05 0.0021
39.2 0.981 0.184 0.995 0.092 3.67E+05 0.0021
3904 0.983 0.189 0.996 0.095 3.78E+05 0.0022
39.6 0.986 0.195 0.998 0.098 3.92E+05 0.0024
39.8 0.987 0.203 0.999 0.102 4.lOE+05 0.0026
40 0.983 0.213 0.997 0.107 4.33E+05 0.0029
40.2 0.970 0.223 0.991 0.113 4.59E+05 0.0032
4004 0.948 0.223 0.980 0.114 4.66E+05 0.0034
40.6 0.931 0.204 0.971 0.105 4.32E+05 0.0031
40.8 0.928 0.179 0.968 0.092 3.82E+05 0.0025
41 0.944 0.155 0.975 0.080 3.3IE+05 0.0018
41.2 0.968 0.147 0.987 0.075 3.12E+05 0.0015
41.4 0.987 0.156 0.996 0.078 3.28E+05 0.0015
41.6 0.998 0.169 1.002 0.084 3.55E+05 0.0018

eV £1 q n k (l (em· l ) R
41.8 0.992 0.188 1.000 0.094 3.98E+05 0.0022
42 0.973 0.192 0.991 0.097 4. 12E+05 0.0024
42.2 0.958 0.177 0.983 0.090 3.84E+05 0.0021
42.4 0.960 0.155 0.983 0.079 3.38E+05 0.0016
42.6 0.970 0.136 0.987 0.069 2.98E+05 0.0012
42.8 0.988 0.131 0.996 0.066 2.86E+05 0.0011
43 1.002 0.130 1.003 0.065 2.82E+05 0.0010
44 1.044 0.149 1.025 0.073 3.25E+05 0.0014
45 1.064 0.166 1.035 0.080 3.66E+05 0.0018
50 1.066 0.238 1.039 0.115 5.81E+05 0.0035
55 1.047 0.265 1.031 0.128 7.15E+05 0.0042
60 1.016 0.268 1.017 0.132 8.02E+05 0.0043
65 0.983 0.256 1.000 0.128 8.44E+05 0.0041
70 0.948 0.248 0.982 0.126 8.97E+05 0.0041
75 0.919 0.189 0.963 0.098 7.46E+05 0.0028
80 0.933 0.139 0.968 0.072 5.84E+05 0.0016
85 0.961 0.114 0.982 0.058 5.0IE+05 0.00094
90 0.984 0.109 0.993 0.055 5.01E+05 0.00077
95 0.999 0.112 1.001 0.056 5.38E+05 0.00078
100 1.006 0.117 1.005 0.058 5.9OE+05 0.00085
105 1.007 0.121 1.005 0.060 6.43E+05 0.00091
110 1.005 0.119 1.004 0.059 6.60E+05 0.00088
115 1.006 0.123 1.005 0.061 7.11E+05 0.00093
120 1.003 0.123 1.003 0.061 7.44E+05 0.00093
125 1.007 0.119 1.005 0.059 7.51E+05 0.00088
130 1.010 0.120 1.007 0.060 7.86E+05 0.00089
135 1.009 0.127 1.006 0.063 8.64E+05 0.0010
140 1.006 0.132 1.005 0.066 9.34E+05 0.0011
145 1.000 0.135 1.003 0.067 9.92E+05 0.0011
150 0.993 0.145 0.999 0.073 1.l0E+06 0.0013
155 0.973 0.153 0.990 0.077 1.22E+06 0.0015
D7 CUBIC CADMIUM SULPHIDE
(c-CdS)

The stable bulk crystal structure of cadmium sulphide (CdS) is of the wurtzite type. It
can also crystallize in the cubic, zinc-blende modification (c-CdS). By using the new
crystal growth technique (MBE) and a suitable substrate, (11O)InP, it is now possible to
grow cubic CdS relatively easily [1]. Note that the lattice parameter of InP (5.8688 A)
is close to that of c-CdS (5.818 A).

The electronic energy-band structure of c-CdS was investigated theoretically by a
number of authors [2-8]. We show in Fig. D7-1 the electronic energy-band structure of
c-CdS as calculated within the local-density-functional formalism by Zunger and
Freeman [3]. Table D7-1lists the experimental CP energies in c-CdS [9,10].
The fundamental absorption edge of c-CdS corresponds to direct transitions from the
highest valence band to the lowest conduction band at the r point (EJ. At 300 K, the
Eo-gap energy is found to be 2.41 eV [10]. The theoretically obtained values of this gap
are: 2.7 eV [2]; 2.0 eV [3], 2.4 eV [5]; 2.16 eV [7]; 2.4 eV [8]. The second lowest di-
rect gap (EI ) corresponds to transitions along the <111> directions (A) or at the L point
in the BZ. Because of a very small SO-interaction energy, no SO-related peaks (Le.,
Eo+~, EI+£\I' etc.) have been identified in optical spectra of this material.
The E2 transitions in c-CdS may occur at or near the X point in the BZ (at energies of
-6.4 and 6.9 eV, Ref. [9]). The Eo' and EI' transitions are expected to occur at or near
the r (-7.4 eV) and L points (-8.3 eV), respectively. Structures in ~ above 12 eV are
assigned to transitions from the Cd 4d and S 3s states into the conduction band [9].
Valence-band structure of c-CdS has also been studied recently by several authors
[11,12].

The normal-incidence reflectivity spectrum of c-CdS has been measured by Cardona et
al. [13] for photon energies between 2 and 22 eV at room temperature. The samples
were prepared by epitaxial deposition on (1ll)As face of GaAs substrates. The various
CPs and core-electron-related peaks were observed in this reflectivity spectrum (Eo, Eo',
E I , E 2 , dl'~' etc.). In the limit of their £1 data (E~O eV), we can estimate the high-
487
2
:;-
~
Ei
CIl
0
C
w
-2 Figure D7·1 Electronic energy-band
structure of c-CdS as calculated
within the local-density-functional
-4 fonnalism. (From Zunger and Free-
man [3].) The locations of several
interband transitions are included by
-6 the vertical arrows.
-9 c-CdS
-11
-13
W l A r t.. X K L r
TABLE D7·1 Energies of the CPs and positions of peaks in the optical
spectra of c-CdS at 300 K.
CPs eV
Eo 2.41
El 5.02"
E2 6.4,6.9b
Eo' 7.4b
E 1' 8.3 b
4d (Cd) 13.0-14.Sb
a2D-exciton energy.
bAt 90 K.
frequency dielectric constant of coedS to be £~=5.3.

Zahn et al. [14] have observed in reflectance spectra (T=1.6 K) of coedS the strain-
split (HH and LH) free-exciton loops in the 2.45-e V spectral range. The coedS was
grown on (llO)InP by MBE. The free-exciton energies determined were 2.4509 eV
D7 CUBIC CADMIUM SULPHIDE (c-CdS) 489
(HH) and 2.4602eV (LH) , respectively.

The (£1' ~) data in the interband transition region of c-CdS have been determined
using SE in the 2.0-5.5-eV region at room temperature by Rossow et al. [10] and in the
4.5-1S-eV region at 90 K by Hofmann et al. [9]. The samples used in these measure-
ments were grown on (11O)InP by MBE. We show in Fig. D7-2, as examples, the £(E)
spectra for c-CdS, together with those for hexagonal CdS, measured by Hofmann et al.
[9]. It should be noted that the £1 values above -5 eV obtained by Cardona et al. [13]
are considerably smaller than those determined by SE [9,10] (e.g., £1=1.0 in Ref. [13]
and £1=3.3 in Ref. [10] at E=5.5 eV).
Optical properties in the vacuum-UV region (36-150 e V) of some II-VI compounds,
including CdS, have been studied by Cardona and Haensel [15]. The CdS film used by
these authors was obtained by vacuum evaporation on a noncrystalline substrate, and
thus it was polycrystalline. While the film is expected to have the wurtzite structure, no
essential differences between the cubic and wurtzite spectra should exist in this spectral
region [16]. Only a broad structure peaking at -60 eV was observed in the absorption
spectrum of polycrystalline CdS [15] (see also Sec. DS).
8 (a) cubic CdS (a) cubic CdS

d'fl d3/ 1
6
1.0
I I
~
4 E'1
.......... '\
o
2
. "
',t' .. / \ ................... _..
0.5
.. '",,1
(b) hexagonal CdS (E1c)

hexagonal CdS (Elc)
§
'x:l
~ 1.0
E'
1 u
'.8
~ 0.5
~
i5
8 (c) (c)
hexagonal CdS (Elle) hexagonal CdS (Elle)
4 E'1
4 5 6 7 8 9 10 12 13 14 IS 16 17 18
Photon Energy (e V) Photon Energy (e V)
Figure D7-2 £(E) spectra for (a) c-CdS and (b), (c) hexagonal w-CdS measured by SE at 90 K.
(From Hofmann et al. [9].)
We list in Table D7-2 the room-temperature values of £=£I+i~, n*=n+ik, a, and R

for c-CdS. The real optical constants, £1 and n, for E~1.5 eV were taken from Cardona
et al. [13]. A complete set of the optical constants for 2.0~~5.5 eV were taken from
Rossow et al. [10]. The imaginary constants, k and a, for D-40 eV were obtained from
Cardona and Haensel [15].
The (£1' ~, (n, k), a, and R values in Table D7-2 are plotted in Figs. D7-3-D7-6,
respectively. The vertical arrows in the figures indicate the positions of the Eo CP and
2D EI exciton peak (Ex).
REFERENCES
1. W. G. Wilke, R. Seedorf, and K. Hom,]. Vac. Sci. Technol. B 7, 807 (1989).
2. D. J. Stukel, R. N. Euwema, T. C. Collins, F. Herman, and R. L. Kortum, Phys.
Rev. 179,740 (1969).
3. A. Zunger and A. J. Freeman, Phys. Rev. B 17,4850 (1978).
4. S.1. Kurganskii, O. V. Farberovich, and E. P. Domashevskaya, Sov. Phys. Semi-
condo 14,775 (1980).
5. K. J. Chang, S. Froyen, and M. L. Cohen, Phys. Rev. B 28,4736 (1983).
6. O. Zakharov, A. Rubio, X. Blase, M. L. Cohen, and S. G. Louie, Phys. Rev. B SO,
10780 (1994).
7. M. Rohlfmg, P. KrUger, and J. Pollmann, Phys. Rev. Lett. 75, 3489 (1995).
8. D. Vogel, P. Krrtiger, and J. Pollmann, Phys. Rev. B 54, 5495 (1996).
9. Ph. Hofmann, K. Hom, A. M. Bradshaw, R. L. Johnson, D. Fuchs, and M. Car-
dona, Phys. Rev. B 47, 1639 (1993).
to. U. Rossow, T. Weminghaus, D. R. T. Zahn, W. Richter, and K. Hom, Thin Solid
Films 233,176 (1993); U. Rossow, private communication (1994).
11. D. W. Niles and H. Hochst, Phys. Rev. B 44,10965 (1991).
12. A. P. J. Stampfl, Ph. Hofmann, O. Schaff, and A. M. Bradshaw, Phys. Rev. B 55,
9679 (1997).
13. M. Cardona, M. Weinstein, and G. A. Wolff, Phys. Rev. 140, A633 (1965).
14. D. R. T. Zahn, G. Kudlek, U. Rossow, A. Hoffmann, I. Broser, and W. Richter,
Adv. Mater. Opt. Electron. 3, 11 (1994).
10.-~--~~--~~--~~
9 !
E 1 (Ex)
8
7
6 I
I
I.U 5 I
4 I
/
/
3
,,,
/ E1
/
r-/
2
1
o c-CdS
-10 1 2 3 4 5 6 7
Photon energy (eV)
Figure D7-3 £1(E) and £2(E) spectra for c-CdS at 300 K.
c-CdS ! E 1 (Ex)
2
c:
o 1234567
Photon energy (eV)
Figure D7·4 n(E) and k(E) spectra for c-CdS at 300 K.
492 ll-VI SEMICONDUCTORS
c-CdS
10~OO 101 102

Photon energy (eV)
Figure D7-5 ro...E) spectrum for c-CdS at 300 K.
0.4 ,-----,----,-----,--,-,------,--,
c-CdS
0.3
a:
0.2
0.1 0 1 2 3 4 5 6 7
Photon energy (eV)
Figure D7-6 R(E) spectrum for c-CdS at 3OOK.
07 CUBIC CADMIUM SULPHIDE (c-CdS) 493
Table D7 -2 Optical constants of c-CdS at 300 K.

eV £1 £2 n k a (cm·1) R
0.5 5.30 2.30 0.156
1 5.42 2.33 0.159
1.5 5.70 2.39 0.168
2 6.179 2.486 0.182
2.02 6.220 2.494 0.183
2.04 6.264 2.503 0.184
2.06 6.330 2.516 0.186
2.08 6.367 2.523 0.187
2.1 6.420 2.534 0.188
2.12 6.461 2.542 0.190
2.14 6.510 2.551 0.191
2.16 6.567 2.563 0.192
2.18 6.613 2.572 0.194
2.2 6.689 2.586 0.196
2.22 6.757 2.599 0.197
2.24 6.834 2.614 0.199
2.26 6.919 2.630 0.202
2.28 7.023 2.650 0.204
2.3 7.143 2.673 0.207
2.32 7.308 2.703 0.212
2.34 7.503 2.739 0.216
2.36 7.742 0.462 2.784 0.083 1.99E+04 0.223
2.38 7.962 0.721 2.825 0.128 3.08E+04 0.228
2.4 8.068 1.047 2.846 0.184 4.48E+04 0.232
2.42 8.091 1.410 2.855 0.247 6.06E+04 0.235
2.44 8.005 1.732 2.846 0.304 7.53E+04 0.235
2.46 7.824 1.982 2.819 0.352 8.77E+04 0.233
2.48 7.610 2.140 2.785 0.384 9.66E+04 0.230
2.5 7.391 2.232 2.749 0.406 1.03E+05 0.227
2.52 7.207 2.237 2.716 0.412 1.05E+05 0.223
2.54 7.074 2.283 2.693 0.424 1.09E+05 0.220
2.56 6.959 2.282 2.672 0.427 l.11E+05 0.218
2.58 6.880 2.230 2.656 0.420 l.10E+05 0.216
2.6 6.815 2.254 2.645 0.426 l.12E+05 0.214
2.62 6.761 2.243 2.635 0.426 l.13E+05 0.213
2.64 6.721 2.230 2.627 0.424 l.14E+05 0.212
2.66 6.693 2.180 2.620 0.416 l.12E+05 0.211
2.68 6.656 2.210 2.614 0.423 l.15E+05 0.210
2.7 6.636 2.237 2.611 0.428 l.17E+05 0.210
2.72 6.610 2.241 2.607 0.430 1.19E+05 0.210
2.74 6.586 2.264 2.603 0.435 1.21E+05 0.209
2.76 6.575 2.225 2.600 0.428 1.20E+05 0.209
2.78 6.547 2.264 2.596 0.436 1.23E+05 0.209
2.8 6.538 2.246 2.593 0.433 1.23E+05 0.208
2.82 6.521 2.265 2.591 0.437 1.25E+05 0.208
2.84 6.504 2.269 2.588 0.438 1.26E+05 0.208
2.86 6.494 2.288 2.586 0.442 1.28E+05 0.208
2.88 6.483 2.300 2.585 0.445 1.30E+05 0.208
2.9 6.471 2.318 2.583 0.449 1.32E+05 0.208
2.92 6.463 2.319 2.582 0.449 1.33E+05 0.207
Table D7·2 Continued (e·CdS).

eV £[ £2 n k a (cm·[) R
2.94 6.458 2.336 2.S81 0.453 1.3SE+05 0.208
2.96 6.4S0 2.34S 2.S80 0.455 1.36E+05 0.208
2.98 6.440 2.364 2.579 0.458 1.38E+05 0.208
3 6.43S 2.376 2.S78 0.461 1.40E+05 0.208
3.02 6.423 2.400 2.S77 0.466 1.43E+05 0.208
3.04 6.408 2.414 2.S74 0.469 I.4SE+OS 0.208
3.06 6.406 2.427 2.S75 0.471 1.46E+05 0.208
3.08 6.387 2.460 2.S72 0.478 1.49E+05 0.208
3.1 6.376 2.464 2.S70 0.479 l.SIE+OS 0.208
3.12 6.362 2.476 2.568 0.482 1.52E+05 0.208
3.14 6.353 2.488 2.S67 0.48S l.S4E+OS 0.208
3.16 6.359 2.484 2.S68 0.484 1.55E+05 0.208
3.18 6.369 2.493 2.570 0.48S l.S6E+05 0.208
3.2 6.380 2.516 2.S73 0.489 l.S9E+05 0.209
3.22 6.395 2.549 2.577 0.495 1.6IE+OS 0.209
3.24 6.389 2.580 2.S77 O.SOI 1.64E+OS 0.210
3.26 6.384 2.605 2.577 0.505 1.67E+OS 0.210
3.28 6.389 2.624 2.S78 0.509 1.69E+OS 0.211
3.3 6.385 2.644 2.S78 0.513 l.72E+OS 0.211
3.32 6.394 2.667 2.581 0.517 1.74E+OS 0.211
3.34 6.401 2.697 2.583 0.S22 1.77E+05 0.212
3.36 6.403 2.726 2.585 0.527 1.80E+05 0.212
3.38 6.433 2.740 2.S91 0.529 1.8IE+05 0.213
3.4 6.407 2.784 2.S88 0.538 1.8SE+05 0.214
3.42 6.405 2.814 2.589 0.544 1.88E+05 0.214
3.44 6.412 2.840 2.S91 0.548 1.91E+05 0.215
3.46 6.406 2.867 2.591 0.553 1.94E+05 0.215
3.48 6.410 2.892 2.S92 0.558 1.97E+05 0.215
3.5 6.409 2.921 2.594 0.563 2.00E+05 0.216
3.52 6.411 2.949 2.S9S 0.S68 2.03E+OS 0.216
3.54 6.407 2.977 2.59S 0.S74 2.06E+05 0.217
3.56 6.406 3.006 2.S96 0.579 2.09E+05 0.217
3.58 6.400 3.038 2.S97 0.585 2. 12E+05 0.218
3.6 6.406 3.064 2.599 0.590 2.15E+05 0.218
3.62 6.403 3.090 2.S99 0.S94 2.18E+OS 0.219
3.64 6.406 3.121 2.601 0.600 2.2IE+05 0.219
3.66 6.407 3.149 2.602 0.60S 2.24E+OS 0.220
3.68 6.408 3.176 2.604 0.610 2.28E+05 0.220
3.7 6.410 3.205 2.60S 0.615 2.31E+OS 0.221
3.72 6.404 3.236 2.606 0.621 2.34E+OS 0.221
3.74 6.403 3.268 2.607 0.627 2.38E+05 0.222
3.76 6.403 3.298 2.608 0.632 2.4IE+OS 0.223
3.78 6.40S 3.332 2.610 0.638 2.4SE+OS 0.223
3.8 6.409 3.360 2.612 0.643 2.48E+05 0.224
3.82 6.414 3.394 2.614 0.649 2.SIE+05 0.22S
3.84 6.410 3.426 2.61S 0.655 2.S5E+05 0.225
3.86 6.40S 3.462 2.616 0.662 2.S9E+OS 0.226
3.88 6.406 3.496 2.618 0.668 2.63E+05 0.226
3.9 6.406 3.529 2.619 0.674 2.66E+OS 0.227
3.92 6.409 3.565 2.621 0.680 2.70E+OS 0.228
Table D7·2 Continued (c-CdS).

eV tl t2 n k a (em'l) R
3.94 6.411 3.598 2.623 0.686 2.74E+05 0.228
3.96 6.406 3.636 2.624 0.693 2.78E+05 0.229
3.98 6.409 3.671 2.626 0.699 2.82E+05 0.230
4 6.409 3.709 2.628 0.706 2.86E+05 0.230
4.02 6.410 3.749 2.630 0.713 2.9OE+05 0.231
4.04 6.408 3.787 2.632 0.720 2.95E+05 0.232
4.06 6.415 3.828 2.635 0.726 2.99E+05 0.233
4.08 6.416 3.868 2.637 0.733 3.03E+05 0.234
4.1 6.419 3.909 2.640 0.740 3.08E+05 0.235
4.12 6.422 3.954 2.642 0.748 3. 13E+05 0.236
4.14 6.415 3.997 2.643 0.756 3. 17E+05 0.236
4.16 6.420 4.042 2.646 0.764 3.22E+05 0.237
4.18 6.418 4.088 2.648 0.772 3.27E+05 0.238
4.2 6.415 4.136 2.650 0.780 3.32E+05 0.239
4.22 6.407 4.184 2.651 0.789 3.38E+05 0.240
4.24 6.410 4.233 2.654 0.797 3.43E+05 0.241
4.26 6.411 4.287 2.657 0.807 3.48E+05 0.242
4.28 60403 4.339 2.659 0.816 3.54E+05 0.243
4.3 6.412 4.393 2.663 0.825 3.60E+05 0.244
4.32 6.411 4.449 2.666 0.834 3.65E+05 0.246
4.34 6.409 4.508 2.669 0.845 3.72E+05 0.247
4.36 6.400 4.569 2.671 0.855 3.78E+05 0.248
4.38 6.401 4.634 2.674 0.866 3.85E+05 0.249
4.4 6.401 4.697 2.678 0.877 3.91E+05 0.251
4.42 6.391 4.769 2.680 0.890 3.99E+05 0.252
4.44 6.386 4.837 2.683 0.901 4.06E+05 0.254
4.46 6.379 4.911 2.686 0.914 4.13E+05 0.255
4.48 6.379 4.982 2.690 0.926 4.21E+05 0.257
4.5 6.376 5.062 2.694 0.939 4.29E+05 0.258
4.52 6.369 5.143 2.698 0.953 4.37E+05 0.260
4.54 6.352 5.223 2.700 0.967 4.45E+05 0.262
4.56 6.333 5.312 2.702 0.983 4.54E+05 0.263
4.58 6.308 5.403 2.703 0.999 4.64E+05 0.265
4.6 6.274 5.499 2.703 1.017 4.74E+05 0.267
4.62 6.227 5.593 2.701 1.035 4.85E+05 0.269
4.64 6.170 5.697 2.699 1.055 4.97E+05 0.270
4.66 6.127 5.798 2.698 1.074 5.08E+05 0.272
4.68 6.080 5.908 2.698 1.095 5.20E+05 0.274
4.7 6.042 6.014 2.699 1.114 5.31E+05 0.277
4.72 5.999 6.122 2.699 1.134 5.43E+05 0.279
4.74 5.933 6.241 2.697 1.157 5.56E+05 0.281
4.76 5.880 6.357 2.696 1.179 5.69E+05 0.283
4.78 5.783 6.485 2.690 1.205 5.84E+05 0.286
4.8 5.705 6.605 2.686 1.229 5.98E+05 0.288
4.82 5.583 6.737 2.677 1.258 6.15E+05 0.291
4.84 5.490 6.856 2.672 1.283 6.30E+05 0.294
4.86 5.343 6.973 2.658 1.312 6.46E+05 0.296
4.88 5.216 7.085 2.647 1.338 6.62E+05 0.298
4.9 5.040 7.210 2.630 1.371 6.81E+05 0.301
4.92 4.851 7.313 2.610 1.401 6.99E+05 0.304
Table D7·2 Continued (c-CdS).

eV 101 102 n k a (cm'l) R
4.94 4.658 7.400 2.589 1.429 7. 16E+05 0.306
4.96 4.424 7.471 2.560 1.459 7.34E+05 0.308
4.98 4.189 7.532 2.531 1.488 7.51E+05 0.310
5 3.923 7.568 2.495 1.517 7.69E+05 0.312
5.02 3.679 7.577 2.460 1.540 7.84E+05 0.314
5.04 3.437 7.566 2.423 1.561 7.98E+05 0.315
5.06 3.183 7.522 2.382 1.579 8.10E+05 0.316
5.08 3.020 7.472 2.354 1.587 8. 18E+05 0.316
5.1 2.767 7.353 2.305 1.595 8.25E+05 0.315
5.12 2.619 7.246 2.272 1.595 8.28E+05 0.314
5.14 2.374 7.037 2.214 1.590 8.28E+05 0.311
5.16 2.284 6.888 2.184 1.577 8.25E+05 0.308
5.18 2.110 6.641 2.131 1.558 8.18E+05 0.303
5.2 2.068 6.428 2.100 1.530 8.07E+05 0.297
5.22 1.942 6.170 2.051 1.504 7.96E+05 0.291
5.24 1.895 5.924 2.014 1.470 7.81E+05 0.284
5.26 1.820 5.679 1.973 1.439 7.68E+05 0.277
5.28 1.749 5.421 1.929 1.405 7.52E+05 0.269
5.3 1.916 5.367 1.951 1.375 7.39E+05 0.264
5.32 1.950 5.240 1.942 1.349 7.28E+05 0.258
5.34 1.986 5.108 1.932 1.322 7.16E+05 0.253
5.36 2.081 5.043 1.941 1.299 7.06E+05 0.249
5.38 2.314 5.057 1.984 1.274 6.95E+05 0.246
5.4 2.254 4.930 1.959 1.258 6.89E+05 0.242
5.42 2.330 4.903 1.970 1.245 6.84E+05 0.240
5.44 2.495 4.891 1.998 1.224 6.75E+05 0.238
5.46 2.704 4.882 2.035 1.199 6.64E+05 0.236
5.48 3.218 4.856 2.126 1.142 6.34E+05 0.232
5.5 3.324 4.813 2.142 1.124 6.27E+05 0.230
40 0.037 1.52E+05
45 0.039 1.79E+05
50 0.043 2.18E+05
55 0.044 2.47E+05
57 0.043 2.49E+05
60 0.041 2.50E+05
65 0.037 2.47E+05
70 0.034 2.43E+05
72 0.033 2.40E+05
75 0.030 2.30E+05
80 0.Q25 2.01E+05
90 0.016 1.42E+05
100 0.0088 8.93E+04
110 0.0049 5.51E+04
120 0.0027 3.23E+04
130 0.0017 2.28E+04
140 0.0015 2.09E+04
150 0.0013 1.98E+04
D8 WURTZITE CADMIUM SULPHIDE
(w-CdS)
DS.1 GENERAL REMARKS

Wurtzite cadmium sulphide (w-CdS) is a member of the II-VI semiconductor com-
pounds. It possesses a wide fundamental band gap (-2.5 eV at 300 K) and has been
used extensively in photoconducting cells, being effective in the visible-UV spectral
region [1]. The material is also attractive for nonlinear optical devices [2], heterogene-
ous solar cells [3], and other optoelectronic devices in the blue-UV spectral region.
Because of the hexagonal (wurtzite) nature, it is optically anisotropic (i.e., optically
uniaxial).
DS.2 ELECTRONIC ENERGY·BAND STRUCTURE

See discussion in Sec. 1.2.2 (c) in the companion book "Optical Properties of Crys-
talline and Amorphous Semiconductors: Materials and Fundamental Principles."
DS.3 OPTICAL CONSTANTS
The room-temperature values of the static and high-frequency dielectric constants of w-
CdS reported by Samara [4] are: £,=8.99 and £.=5.31 for Eolc; £.=10.21 and £.=5.38
for Ellc. This author also investigated the effects of temperature and pressure on the
static dielectric constant for a number of crystalline semiconductors (GaAs, w-CdS, Si,
etc.). Hattori et al. [5] reported the 5-K values of e. to be 9.67 for Eolc and 10.69 for
Ellc.
Optical properties in the reststrahlen region of w-CdS have been studied by a number
of authors [6-9]. The reststrahlen parameters determined by Balkanski [8], for example,
are: cow=240 cm-., "(=4.7 cm-l, £.=8.4, and £.=5.3 for Eolc; roro=232 cm-" 1=6.3 cm-t,
£.=8.9, and £.=5.4 for Ellc (see Fig. 2.11 in Sec. 2.2.1). Giebler and Jaime [9] studied
the effect of damping on the plasmon-phonon coupling in w-CdS and GaP.
Optical absorption in the multiphonon absorption band region of ~-Zns has been
studied [10-12]. In Ref. [12], the two-phonon combinations and their locations in the
BZ were successfully identified; however, the absorption spectra reported there were
plotted in arbitrary scale.
The n(E) dispersion in the transparent region of w-CdS has been determined by sev-
eral authors [13-16]. The measured n values are in reasonable agreement with each
other. Figure D8-1 shows the n(E) data of w-CdS measured by Lisitsa et al. [15] and
Ninomiya and Adachi [16]. These data were obtained by the methods of prism and in-
497
2.8
CdS
2.7 : SE data
x 2 Lisitsa et al.
CD
"'0 :-::-:-: Calcu .
.5 2.6
~
13
~ 2.5
'Q)
0:
2.4
T=300 K
2.3'---7-L-.l...-J.~..l;::-l--L....L.......I1.......!-....L.......IL...L~~
1 1.5 2 2.5
Photon energy (eV)
Figure D8·1 neE) spectra of w-CdS for E.Lc (n.J and Elle (nl~ at room temperature. The solid
circles and triangles represent the SE data. The open circles and triangles also represent the
experimental data taken from Lisitsa et at. [15]. The solid and dashed lines show the calculated
results using Eq. (D2.1). (From Ninomiya and Adachi [16].)
terference fringe [15] and SE [16]. The solid and dashed lines in Fig. 08-1 represent
the calculated results of the fIrst-order Sellmeier equation, Eq. (02.1), with A=4.23,
B=1.00, and C=0.180 Jlm2 for E.le (solid line) and A=4.29, B=1.00, and C=O.I78 Jlm2
for Elle (dashed line). As a byproduct [Le., 1..-+00 Jlm in Eq. (02.1)], the high-frequency
dielectric constants of w-CdS were determined to be £.=5.23 for E.le and 5.29 for Elle
[16]. The hydrostatic-pressure dependence of nat 1..=5893 A has been determined for
some hexagonal crystals, including w-CdS, by an interferometric technique for pres-
sures up to 0.7 GPa [17].
The absorption properties at the fundamental band edge of w-CdS have been re-
ported [18-23]. The samples used were bulk CdS single crystals [18-21,23] and epi-
taxial CdS fIlm [22]. Sharp resonances associated with the A and B excitons have been
clearly found in such optical absorption spectra. Peaks due to the C exciton have also
been identifIed in Refs. [19,22]. The Eo-edge exciton resonance has also been found in
the fundamental reflectivity spectra of w-CdS by a number of groups [19,23-7]. Two-
photon absorption spectroscopy has been used recently to determine the exciton
parameters of w-CdS as a function of hydrostatic pressure in the range of 0-2 GPa
[28].
The fundamental reflectivity spectra in the interband transition region of w-CdS have
been measured by Cardona and Harbeke [29] and Freeouf [30]. By performing the KK
analysis, the (n, k) or (£1' ~ values were extracted in the 1-12-eV region [29] and in
D8 WURTZITE CADMIUM SULPHIDE (w-CdS) 499
the 0-25-eV region [30].

A set of the optical constants for w-CdS (1.2~:S;5.7 eV) at room temperature have
been determined using SE by Ninomiya and Adachi [16]. The SE £(E) data in the 4.5-
18-eV region of w-CdS at 90 K have also been reported by Hofmann et al. [31]. The
crystals used in these works were bulk single crystals. Because of the optical anisotro-
py of w-CdS, at least two independent measurements at each wavelength are necessary
to determine the two sets of optical constants, i.e., those for E.1.c and Ellc polarizations.
The surface orientations, parallel to the c axis, enabled such measurements. The £(E)
data for w-CdS measured by Hofmann et al. [31] have already been shown in Fig. D7-2,
together with those for cubic CdS. It should be noted that the ~ values of -6.8 for E.1.c
and -8.8 for Ellc at the EI peak determined by SE [16] are slightly larger than those
obtained from reflectivity measurements [30] (-6.4 for E.1.c and -8.5 for Ellc).
Optical properties in the vacuum-UVregion (36-150 eV) of some II-VI compounds,
including CdS, have been studied by Cardona and Haensel [32]. The CdS film used in
this study was obtained by vacuum evaporation on a noncrystalline substrate, and thus
it was polycrystalline. Only a broad structure peaking at -60 eV was observed in the
absorption spectrum of polycrystalline CdS.
Tables D8-1 and D8-2list the room-temperature values of £=£I+i~, n*=n+ik, ex, and
R for w-CdS for E.1.c and Ellc, respectively. A set of the optical constants for E:S;0.5 eV
were calculated using the reststrahlen parameters given by Balkanski [8]. The n (£1)
values below the Eo edge (0.885~:S;2.407 eV for E.1.c and 0.885~:S;2.421 eV for Ellc)
were taken from Bieniewski and Czyzak [14], while the k (ex) values for
2.384~:S;2.407 eV for E.1.c and 2.388~:S;2.421 eV for Ellc were taken from Dutton
[18]. A set of the optical constants in the interband transition region were taken from
Ninomiya and Adachi [16] for 2.45~:S;5.687 eV and from Freeouf [12] for 6~:S;15 eV.
The imaginary constants, k and ex, for &40 eV were obtained from Cardona and
Haensel [32]. Since no polarization dependence should exist in this spectral region (Le.,
&40 eV), we listed these data only in Table D8-I.
The (£1' ~), (n, k), ex, and R values in Tables D8-1 and D8-2 are plotted in Figs. D8-
2-D8-4. The vertical arrows in the figures indicate the positions of the Eo CP and 2D EI
exciton peaks (Ex). It has been shown [16] that such optical-constant spectra can be
successfully explained by the MDF.
REFERENCES
1. L. Ward, in Handbook of Optical Constants of Solids II, edited by E. D. Palik
(Academic, Boston, 1991), p. 579.
2. I. Broser, Ch. Fricke, B. Lummer, R. Heitz, H. Perls, and A. Hoffmann, J. Cryst.
Growth 117,788 (1992).
3. A. Yoshikawa and Y. Sakai, Solid-State Electron. 20,133 (1977).
6. H. W. Verleur and A. S. Barker, Jr., Phys. Rev. 155,750 (1967).

7. A. Manabe, A. Mitsuishi, and H. Yoshinaga,Jpn. f. Appl. Phys. 6,593 (1967).
8. M. Balkanski, in Optical Properties of Solids, edited by F. Abeles (North-Holland,
Amsterdam, 1972), p. 529.
9. M. Giehler and E. Jahne, Phys. Status Solidi B 73, 503 (1976).
10. M. Balkanski and J. M. Besson, f. Appl. Phys. 32, 2292 (1961).
11. T. Deutsch, f. Appl. Phys. 33,751 (1962).
12. M. A. Nusimovici, M. Balkanski, and J. L. Birman, Phys. Rev. B 1,595 (1970).
13. S. J. Czyzak, W. M. Baker, R. C. Crane, and J. B. Howe,f. Opt. Soc. Am. 47,240
(1957).
14. T. M. Bieniewski and S. J. Czyzak, f. Opt. Soc. Am. 53,496 (1963).
15. M. P. Lisitsa, L. F. Gudymenko, V. N. Malinko, and S. F. Terekhova, Phys. Status
Solidi 31,389 (1969).
16. S. Ninomiya and S. Adachi, f. Appl. Phys. 78,1183 (1995).
17. K. Vedamand T. A. Davis,Phys. Rev. 181, 1196 (1969).
18. D. Dutton, Phys. Rev. 112,785 (1958).
19. D. G. Thomas and J. J. Hopfield, Phys. Rev. 116, 573 (1959).
20. J. Voigt, F. Spiegelberg, and M. Senoner, Phys. Status Solidi B 91,189 (1979).
21. J. P. Sokoloff, M. Joffre, B. Fluegel, D. Hulin, M. Lindberg, S. W. Koch, A. Mi-
gus, A. Antonetti, and N. Peyghambarian, Phys. Rev. B 38,7615 (1988).
22. M. Griin, U. Becker, H. Gie~en, Th. Gilsdorf, F. Zhou, J. Loidolt, M. MUller, H.
Zangerle, M. Hetterich, and C. Klingshirn, Opt. Mater. 2, 163 (1993).
23. K.-H. Pantke and I. Broser, Phys. Rev. B 48, 11752 (1993).
24. J. J. Hopfield and D. G. Thomas, Phys. Rev. 132,563 (1963).
25. R. F. Leheny, J. Shah, and G. C. Chiang, Solid State Commun. 25,621 (1978).
646 (1978).
27. G. Blattner, G. Kurtze, G. Schmieder, and C. Klingshirn, Phys. Rev. B 25, 7413
(1982).
28. A. Mang, K. Reimann, St. Riibenacke, and M. Steube, Phys. Rev. B 53, 16283
(1996).
31. Ph. Hofmann, K. Hom, A. M. Bradshaw, R. L. Johnson, D. Fuchs, and M. Car-
dona, Phys. Rev. B 47, 1639 (1993).
10
8 w-CdS
6
1.\1 4
2 El..e
::--
0 Elle
-2
12 E1A(Ex) !E 1B (Ex)
10
C\I 8
L,
/ \
1.\1 \
6 Eo I
4
2
!
0 2 4 6 8 10
Photon energy (eV)
Figure D8-2 E1(E) and ~(E) spectra for w-CdS at 300 K.
3 w-CdS
2
1 Ele
Elle
o 2 10
Photon energy (eV)
Figure D8-3 n(E) and k(E) spectra for w-CdS at 300 K.
107 0.4
106
0.3
f'10 5 , ~
Q.104 ,,
1'- ,. 0.2 a:
~ 103 "
"
(a) Elc 0.1
102
101 0
- .., ".,,,
106 0.4
-IX
I 105 ----- R 0.3 a:
''
-
"
5104 '- .....
, ,f"'" ~,
,, "
" ,, 0.2
~ 103 ,
,, (b) Ell c
102 ,. 0.1
10~OO 0
101 102
Photon energy (eV)
Figure D8·4 al...E) and R(E) spectra for w-CdS at 300 K.
Table D8·1 Optical constants ofw-CdSfor E1.c at 300 K.

eV £1 q n k a (cm- I ) 'R
0.Q1 8.795 0.026 2.966 0.0044 4.43E+OO 0.246
0.02 10.95 0.136 3.3lD 0.021 4.16E+01 0.287
0.022 12.14 0.218 3.484 0.031 6.99E+01 0.307
0.024 14.16 DA01 3.764 0.053 1.30E+02 0.337
0.026 18.36 0.947 4.286 O.llD 2.91E+02 0.387
0.027 22.71 1.757 4.770 0.184 5.04E+02 0.427
0.028 31.79 4.280 5.651 0.379 1.08E+03 0.491
0.0285 41.17 8.192 6.448 0.635 1.84E+03 0.538
0.029 59.69 20.91 7.840 1.334 3.92E+03 0.608
0.0292 71.79 35.01 8.708 2.0lD 5.95E+03 0.646
0.0294 84.05 65.53 9.763 3.356 1.00E+04 0.693
0.0295 84.14 92.22 lD.22 4.511 1.35E+04 0.720
0.0296 69.64 126.3 lD.34 6.107 1.83E+04 0.751
0.0297 30.76 154.4 9.699 7.957 2.40E+04 0.782
0.02975 4.213 158.3 9.015 8.778 2.65E+04 0.797
0.0298 -22.02 153.1 8.146 9.401 2.84E+04 0.811
0.0299 -59.20 123.9 6.250 9.913 3.00E+04 0.834
0.03 -72.32 9O.lD 4.648 9.692 2.95E+04 0.852
0.0302 -65.92 46.24 2.702 8.557 2.62E+04 0.876
0.0304 -52.80 26.24 1.755 7.476 2.30E+04 0.889
0.0306 -42.33 16.51 1.246 6.624 2.06E+04 0.898
0.0308 -34.60 11.24 0.943 5.958 1.86E+04 0.904
0.031 -28.84 8.108 0.748 5.422 1.70E+04 0.908
Table DS-l Continued (w-CdS, E.lc).
eV tl q n k a. (em-I) R
0.032 -14.08 2.598 0.345 3.768 1.22E+04 0.914
0.033 -8.026 1.255 0.221 2.842 9.51E+03 0.908
0.034 -4.767 0.736 0.168 2.190 7.55E+03 0.891
0.036 -1.357 0.340 0.145 1.174 4.28E+03 0.785
0.038 0.401 0.194 0.650 0.149 5.75E+02 0.053
0.04 1.468 0.125 1.213 0.052 2.09E+02 0.010
0.05 3.602 0.031 1.898 0.0081 4.09E+01 0.096
0.06 4.290 0.013 2.071 0.0031 1.91E+01 0.122
0.07 4.617 2.149 0.133
0.08 4.803 2.191 0.139
0.09 4.920 2.218 0.143
0.1 4.999 2.236 0.146
0.2 5.230 2.287 0.153
0.3 5.269 2.295 0.155
0.4 5.283 2.298 0.155
0.5 5.289 2.300 0.155
0.885 5.308 2.304 0.156
0.918 5.318 2.306 0.156
0.953 5.331 2.309 0.156
0.992 5.345 2.312 0.157
1.033 5.364 2.316 0.158
1.078 5.382 2.320 0.158
1.127 5.401 2.324 0.159
1.18 5.420 2.328 0.159
1.24 5.448 2.334 0.160
1.305 5.480 2.341 0.161
1.377 5.523 2.350 0.162
1.458 5.574 2.361 0.164
1.549 5.636 2.374 0.166
1.653 5.712 2.390 0.168
1.771 5.827 2.414 0.172
1.836 5.890 2.427 0.173
1.907 5.983 2.446 0.176
1.983 6.086 2.467 0.179
2.066 6.215 2.493 0.183
2.156 6.391 2.528 0.188
2.254 6.656 2.580 0.195
2.264 6.693 2.587 0.196
2.274 6.729 2.594 0.197
2.285 6.770 2.602 0.198
2.295 6.807 2.609 0.199
2.306 6.849 2.617 0.200
2.317 6.906 2.628 0.201
2.328 6.959 2.638 0.203
2.339 7.017 2.649 0.204
2.35 7.081 2.661 0.206
2.361 7.150 2.674 0.208
2.365 7.188 2.681 0.209
2.37 7.220 2.687 0.209
2.375 7.258 2.694 0.210
Table D8·1 Continued (w-CdS, Ric).

eV 101 102 n k a (em-I) R
2.379 7.290 2.700 0.211
2.384 7.301 0.0020 2.702 0.00037 9.00E+01 0.211
2.388 7.339 0.0029 2.709 0.00054 1.30E+02 0.212
2.393 7.388 0.0047 2.718 0.00087 2.10E+02 0.214
2.397 7.437 0.0061 2.727 0.0011 2.70E+02 0.215
2.402 7.480 0.010 2.735 0.0018 4.50E+02 0.216
2.407 7.524 0.016 2.743 0.0030 7.20E+02 0.217
2.45 7.574 0.443 2.75318 0.081 2.00E+04 0.219
2.5 7.265 1.728 2.714 0.318 8.07E+04 0.219
2.551 6.994 1.859 2.667 0.348 9.0IE+04 0.214
2.599 6.806 1.926 2.634 0.366 9.63E+04 0.210
2.649 6.691 1.949 2.613 0.373 1.00E+05 0.208
2.701 6.608 1.973 2.598 0.380 1.04E+05 0.206
2.749 6.550 1.996 2.588 0.386 1.07E+05 0.205
2.799 6.503 2.028 2.580 0.393 1.12E+05 0.204
2.85 6.460 2.066 2.573 0.401 1.16E+05 0.204
2.897 6.429 2.101 2.568 0.409 1.20E+05 0.204
2.952 6.395 2.136 2.563 0.417 1.25E+05 0.203
3.002 6.370 2.173 2.559 0.425 1.29E+05 0.203
3.054 6.345 2.207 2.556 0.432 1.34E+05 0.203
3.1 6.324 2.252 2.553 0.441 1.39E+05 0.203
3.147 6.312 2.279 2.552 0.447 1.42E+05 0.203
3.204 6.299 2.324 2.551 0.456 1.48E+05 0.204
3.254 6.288 2.365 2.550 0.464 1.53E+05 0.204
3.297 6.283 2.378 2.550 0.466 1.56E+05 0.204
3.351 6.278 2.416 2.550 0.474 1.61E+05 0.205
3.397 6.279 2.462 2.552 0.482 1.66E+05 0.206
3.454 6.282 2.511 2.554 0.492 1.72E+05 0.206
3.502 6.290 2.554 2.557 0.499 1.77E+05 0.207
3.552 6.298 2.600 2.560 0.508 1.83E+05 0.208
3.604 6.309 2.648 2.564 0.516 1.89E+05 0.209
3.647 6.321 2.692 2.568 0.524 1.94E+05 0.210
3.701 6.337 2.752 2.573 0.535 2.0IE+05 0.212
3.746 6.355 2.796 2.579 0.542 2.06E+05 0.213
3.803 6.380 2.867 2.586 0.554 2. 14E+05 0.214
3.85 6.403 2.930 2.593 0.565 2.21E+05 0.216
3.899 6.428 3.009 2.601 0.579 2.29E+05 0.218
3.948 6.459 3.079 2.609 0.590 2.36E+05 0.220
3.999 6.489 3.168 2.618 0.605 2.45E+05 0.222
4.052 6.526 3.266 2.629 0.621 2.55E+05 0.224
4.105 6.564 3.375 2.641 0.639 2.66E+05 0.227
4.147 6.601 3.466 2.651 0.654 2.75E+05 0.229
4.203 6.645 3.600 2.665 0.675 2.88E+05 0.232
4.246 6.679 3.726 2.676 0.696 3.00E+05 0.235
4.305 6.726 3.912 2.693 0.726 3. 17E+05 0.240
4.35 6.757 4.077 2.706 0.753 3.32E+05 0.243
4.397 6.780 4.258 2.719 0.783 3.49E+05 0.247
4.444 6.799 4.462 2.732 0.817 3.68E+05 0.251
4.492 6.800 4.699 2.745 0.856 3.90E+05 0.256
4.558 6.769 5.062 2.759 0.917 4.24E+05 0.263
Table DS-l Continued (w-CdS, EJ.c).

eV 1:1 1:2 n k a (cm· l ) R
4.592 6.731 5.267 2.764 0.953 4.44E+05 0.267
4.643 6.624 5.610 2.766 1.014 4.77E+05 0.273
4.696 6.448 5.968 2.760 1.081 5. 15E+05 0.279
4.75 6.154 6.337 2.737 1.157 5.57E+05 0.285
4.805 5.715 6.645 2.691 1.235 6.02E+05 0.289
4.843 5.379 6.762 2.648 1.277 6.27E+05 0.291
4.9 4.850 6.761 2.566 1.317 6.54E+05 0.290
4.959 4.432 6.590 2.487 1.325 6.66E+05 0.285
4.999 4.253 6.425 2.445 1.314 6.66E+05 0.281
5.04 4.160 6.276 2.418 1.298 6.63E+05 0.276
5.102 4.116 6.141 2.399 1.280 6.62E+05 0.273
5.144 4.112 6.134 2.398 1.279 6.67E+05 0.272
5.209 4.059 6.209 2.396 1.296 6.84E+05 0.275
5.253 3.973 6.290 2.389 1.317 7.01E+05 0.277
5.298 3.851 6.377 2.377 1.341 7.21E+05 0.280
5.344 3.682 6.455 2.357 1.369 7.42E+05 0.283
5.39 3.490 6.498 2.331 1.394 7.62E+05 0.285
5.462 3.149 6.496 2.277 1.427 7.90E+05 0.287
5.51 2.933 6.421 2.235 1.436 8.02E+05 0.286
5.56 2.758 6.289 2.194 1.433 8.08E+05 0.284
5.61 2.633 6.124 2.156 1.420 8.08E+05 0.280
5.661 2.593 5.932 2.129 1.393 8.ooE+05 0.274
5.687 2.609 5.811 2.119 1.371 7.91E+05 0.270
6 2.04 4.32 1.85 1.17 7.12E+05 0.220
6.4 2.12 3.88 1.81 1.07 6.96E+05 0.200
6.8 2.36 4.16 1.89 1.10 7.59E+05 0.209
7.2 1.84 4.16 1.79 1.16 8.50E+05 0.216
7.6 1.56 4.60 1.79 1.28 9.89E+05 0.241
8 0.60 4.32 1.58 1.37 l.l1E+06 0.260
8.4 0.24 3.60 1.39 1.30 l.l1E+06 0.248
8.8 0.20 3.72 1.40 1.33 1.18E+06 0.256
9.2 -0.52 3.20 1.17 1.37 1.28E+06 0.290
9.6 -0.60 2.40 0.97 1.24 1.2IE+06 0.284
10 -0.52 1.92 0.86 1.12 1.14E+06 0.271
11 0.20 1.44 0.91 0.79 8.83E+05 0.149
12 0.28 1.12 0.85 0.66 8.04E+05 0.120
13 0.36 1.08 0.87 0.62 8.22E+05 0.105
14 0.36 1.12 0.88 0.64 9.07E+05 0.108
15 0.68 1.00 0.97 0.51 7.82E+05 0.064
40 0.037 1.52E+05
45 0.039 1.79E+05
50 0.043 2.18E+05
55 0.044 2.47E+05
57 0.043 2.49E+05
60 0.041 2.50E+05
65 0.037 2.47E+05
70 0.034 2.43E+05
72 0.033 2.40E+05
75 0.030 2.30E+05
80 0.025 2.01E+05
Table D8·1 Continued (w-CdS, E.lc).

eV n k R
90 0.016 1.42E+05
100 0.0088 8.93E+04
110 0.0049 5.51E+04
120 0.0027 3.23E+04
130 0.0017 2.28E+04
140 0.0015 2.09E+04
150 0.0013 1.98E+04
Table D8·2 Optical constants ofw-CdS for Ellc at 300 K.

eV £1 £2 n k a (em· 1) R
0.01 9.381 0.043 3.063 0.0070 7.08E+OO 0.258
0.02 12.17 0.248 3.489 0.035 7.20E+01 0.307
0.022 13.82 0.422 3.718 0.057 1.27E+02 0.332
0.024 16.87 0.857 4.109 0.104 2.54E+02 0.371
0.026 24.24 2.534 4.930 0.257 6.77E+02 0.440
0.027 33.64 6.081 5.824 0.522 1.43E+03 0.503
0.0275 42.89 11.39 6.605 0.862 2.40E+03 0.549
0.028 58.93 27.26 7.870 1.732 4.92E+03 0.615
0.0281 63.03 33.88 8.203 2.065 5.88E+03 0.631
0.0282 66.99 42.80 8.558 2.500 7.15E+03 0.649
0.0283 70.01 54.83 8.915 3.075 8.82E+03 0.669
0.0284 70.42 70.78 9.227 3.836 1.10E+04 0.691
0.0285 65.l8 90.62 9.402 4.819 1.39E+04 0.714
0.0286 50.22 111.6 9.290 6.006 1.74E+04 0.738
0.0287 23.69 126.5 8.729 7.246 2. 11E+04 0.763
0.02875 7.512 128.9 8.265 7.797 2.27E+04 0.775
0.0288 -8.784 127.1 7.702 8.252 2.41E+04 0.786
0.0289 -36.07 113.0 6.426 8.795 2.58E+04 0.806
0.029 -51.89 92.21 5.192 8.880 2.61E+04 0.823
0.0291 -57.72 72.15 4.164 8.664 2.56E+04 0.836
0.0292 -57.61 55.88 3.365 8.303 2.46E+04 0.847
0.0293 -54.71 43.58 2.760 7.895 2.35E+04 0.856
0.0294 -50.79 34.46 2.301 7.489 2.23E+04 0.863
0.0296 -42.77 22.62 1.675 6.751 2.03E+04 0.873
0.0298 -35.96 15.75 1.284 6.l33 1.85E+04 0.880
0.03 -30.52 11.52 1.025 5.619 1.71E+04 0.885
0.031 -15.51 3.775 0.476 3.966 1.25E+04 0.894
0.032 -9.054 1.833 0.303 3.024 9.81E+03 0.888
0.034 -3.338 0.705 0.192 1.837 6.33E+03 0.840
0.036 -0.748 0.368 0.207 0.889 3.25E+03 0.631
0.038 0.720 0.225 0.859 0.131 5.05E+02 0.011
0.04 1.662 0.151 1.291 0.059 2.37E+02 0.017
0.05 3.671 0.040 1.916 0.011 5.34E+01 0.099
0.06 4.357 0.018 2.087 0.0042 2.57E+01 0.124
0.07 4.690 2.166 0.136
0.08 4.881 2.209 0.142
0.09 5.002 2.237 0.146
Table D8-2 Continued (w-CdS, Elle).
eV I:! 1:2 n k (X (em-!) R
0.1 5.085 2.255 0.149
0.2 5.326 2.308 0.156
0.3 5.368 2.317 0.158
0.4 5.382 2.320 0.158
0.5 5.388 2.321 0.158
0.885 5.387 2.321 0.158
0.918 5.396 2.323 0.159
0.953 5.410 2.326 0.159
0.992 5.424 2.329 0.159
1.033 5.438 2.332 0.160
1.078 5.457 2.336 0.160
1.127 5.476 2.340 0.161
1.18 5.504 2.346 0.162
1.24 5.532 2.352 0.163
1.305 5.565 2.359 0.164
1.377 5.607 2.368 0.165
1.458 5.655 2.378 0.166
1.549 5.722 2.392 0.168
1.653 5.803 2.409 0.171
1.771 5.915 2.432 0.174
1.836 5.983 2.446 0.176
1.907 6.066 2.463 0.178
1.983 6.170 2.484 0.181
2.066 6.305 2.511 0.185
2.156 6.477 2.545 0.190
2.254 6.724 2.593 0.197
2.264 6.760 2.600 0.198
2.274 6.791 2.606 0.198
2.285 6.823 2.612 0.199
2.295 6.875 2.622 0.201
2.306 6.906 2.628 0.201
2.317 6.954 2.637 0.203
2.328 6.991 2.644 0.204
2.339 7.044 2.654 0.205
2.35 7.102 2.665 0.206
2.361 7.156 2.675 0.208
2.365 7.182 2.680 0.208
2.37 7.209 2.685 0.209
2.375 7.231 2.689 0.210
2.379 7.258 2.694 0.210
2.384 7.279 2.698 0.211
2.388 7.301 0.00060 2.702 0.00011 2.70E-tOl 0.211
2.393 7.322 0.00091 2.706 0.00017 4.10E+01 0.212
2.397 7.366 0.0013 2.714 0.00023 5.60E+01 0.213
2.402 7.398 0.0020 2.72 0.00037 9.00E+01 0.214
2.407 7.431 0.0031 2.726 0.00057 1.40E-t02 0.215
2.411 7.491 0.0045 2.737 0.00082 2.00E+02 0.216
2.416 7.524 0.0067 2.743 0.0012 3.00E+02 0.217
2.421 7.568 0.0096 2.751 0.0018 4.30E+02 0.218
2.45 7.798 0.117 2.79249 0.021 5.20E+03 0.223
Table D8-2 Continued (w-CdS, EI/c).

eV £1 £2 n k a (cm· 1) R
2.5 7.935 1.381 2.827 0.244 6. 19E+04 0.231
2.551 7.708 1.902 2.797 0.340 8.79E+04 0.230
2.599 7.339 2.095 2.736 0.383 1.0IE+05 0.224
2.649 7.122 2.118 2.697 0.393 1.05E+05 0.220
2.701 6.997 2.130 2.675 0.398 1.09E+05 0.217
2.749 6.920 2.154 2.662 0.405 1.13E+05 0.215
2.799 6.857 2.193 2.651 0.414 1.17E+05 0.215
2.85 6.804 2.228 2.642 0.422 1.22E+05 0.214
2.897 6.761 2.263 2.635 0.429 1.26E+05 0.213
2.952 6.717 2.307 2.629 0.439 1.31E+05 0.213
3.002 6.681 2.348 2.623 0.448 1.36E+05 0.213
3.054 6.650 2.390 2.619 0.456 1.4IE+05 0.213
3.1 6.623 2.432 2.615 0.465 1.46E+05 0.213
3.147 6.602 2.472 2.613 0.473 1.51E+05 0.213
3.204 6.580 2.520 2.610 0.483 1.57E+05 0.213
3.254 6.561 2.564 2.608 0.492 1.62E+05 0.213
3.297 6.549 2.578 2.606 0.495 1.65E+05 0.213
3.351 6.538 2.627 2.606 0.504 1.71E+05 0.214
3.397 6.529 2.673 2.606 0.513 1.77E+05 0.214
3.454 6.522 2.727 2.607 0.523 1.83E+05 0.215
3.502 6.520 2.766 2.608 0.530 1.88E+05 0.216
3.552 6.519 2.817 2.610 0.540 1.94E+05 0.216
3.604 6.520 2.871 2.612 0.550 2.01E+05 0.217
3.647 6.523 2.913 2.614 0.557 2.06E+05 0.218
3.701 6.533 2.973 2.618 0.568 2. 13E+05 0.219
3.746 6.536 3.024 2.621 0.577 2. 19E+05 0.220
3.803 6.549 3.095 2.626 0.589 2.27E+05 0.222
3.85 6.558 3.153 2.630 0.599 2.34E+05 0.223
3.899 6.572 3.221 2.635 0.611 2.42E+05 0.224
3.948 6.585 3.292 2.641 0.623 2.50E+05 0.226
3.999 6.602 3.372 2.647 0.637 2.58E+05 0.228
4.052 6.622 3.458 2.654 0.651 2.68E+05 0.229
4.105 6.644 3.553 2.663 0.667 2.78E+05 0.232
4.147 6.663 3.623 2.669 0.679 2.85E+05 0.233
4.203 6.688 3.733 2.678 0.697 2.97E+05 0.236
4.246 6.710 3.827 2.687 0.712 3.07E+05 0.238
4.305 6.739 3.960 2.698 0.734 3.20E+05 0.241
4.35 6.765 4.073 2.708 0.752 3.32E+05 0.243
4.397 6.791 4.202 2.718 0.773 3.45E+05 0.246
4.444 6.817 4.339 2.729 0.795 3.58E+05 0.249
4.492 6.841 4.492 2.741 0.819 3.73E+05 0.252
4.558 6.869 4.724 2.757 0.857 3.96E+05 0.257
4.592 6.880 4.851 2.766 0.877 4.08E+05 0.260
4.643 6.888 5.068 2.778 0.912 4.29E+05 0.264
4.696 6.885 5.295 2.790 0.949 4.52E+05 0.269
4.75 6.861 5.553 2.801 0.991 4.77E+05 0.274
4.805 6.816 5.837 2.810 1.039 5.06E+05 0.279
4.843 6.764 6.043 2.814 1.074 5.27E+05 0.283
4.9 6.656 6.363 2.816 1.130 5.61E+Oj 0.289
4.959 6.513 6.700 2.816 1.190 5.98E+05 0.295
Table D8·2 Continued (w-CdS, Elle).
eV EI ~ n k a (em-I) R
4.999 6.385 6.929 2.811 1.232 6.25E+05 0.299
5.04 6.244 7.151 2.805 1.275 6.51E+05 0.303
5.102 5.988 7.520 2.793 1.346 6.96E+05 0.310
5.144 5.781 7.774 2.781 1.398 7.29E+05 0.315
5.209 5.381 8.159 2.753 1.482 7.83E+05 0.324
5.253 5.050 8.403 2.725 1.542 8.21E+05 0.329
5.298 4.654 8.616 2.688 1.603 8.61E+05 0.335
5.344 4.193 8.771 2.638 1.663 9.01E+05 0.340
5.39 3.710 8.846 2.579 1.715 9.37E+05 0.345
5.462 2.923 8.802 2.470 1.782 9.87E+05 0.351
5.51 2.442 8.646 2.390 1.809 1.01E+06 0.352
5.56 2.029 8.386 2.308 1.816 1.02E+06 0.352
5.61 1.730 8.082 2.236 1.808 1.03E+06 0.349
5.661 1.555 7.734 2.173 1.780 1.02E+06 0.343
5.687 1.516 7.547 2.146 1.758 1.0 1E+06 0.339
6 1.60 4.40 1.77 1.241 7.55E+05 0.232
6.4 1.68 3.96 1.73 1.145 7.43E+05 0.210
6.8 2.28 3.64 1.81 1.004 6.92E+05 0.187
7.2 2.72 4.40 1.99 1.107 8.08E+05 0.217
7.6 2.24 5.20 1.99 1.308 1.01E+06 0.253
8 0.72 4.92 1.69 1.458 1.18E+06 0.278
8.4 0.32 4.00 1.47 1.359 1.l6E+06 0.260
8.8 0.56 3.96 1.51 1.311 1.17E+06 0.247
9.2 -0.40 3.80 1.31 1.453 1.36E+06 0.297
9.6 -0.76 2.80 1.03 1.353 1.32E+06 0.307
10 -0.56 2.12 0.90 1.173 1.19E+06 0.277
11 0.08 1.60 0.92 0.872 9.73E+05 0.173
12 0.32 1.20 0.88 0.679 8.26E+05 0.118
13 0.80 1.12 1.04 0.537 7.08E+05 0.065
14 0.80 1.20 1.06 0.567 8.04E+05 0.071
15 0.84 0.96 1.03 0.467 7.lOE+05 0.050
D9 CUBIC CADMIUM SELENIDE
(c-CdSe)

Cadmium selenide (CdSe) is a member of the II-VI semiconductor compounds. At
normal temperature and pressure it crystallizes in the hexagonal, wurtzite lattice. CdSe
can also crystallize in the cubic, zinc-blende modification (c-CdSe), although it is me-
tastable under normal conditions. By using the technique of MBE and suitable sub-
strates it is now possible to grow cubic CdSe relatively easily [I]. Although the blue-
green lasing action has been observed in II-VI alloy system Znl ...Cd..Se/ZnSe [2,3],
there is relatively little work on the electronic and optical properties of the end-pint
binary c-CdSe itself.

Figure D9-1 shows the electronic energy-band structure of c-CdSe as calculated within
the ENPM formalism by Kim et al. [4]. Table D9-llists the CP energies in c-CdSe
-~
3
>. 0
~
Q)
c: -3
W Figure D9-1 Electronic energy-
band structure of c-CdSe as cal-
-6
culated within the ENPM for-
CdSe malism. (From Kim et al. [4].)
-9 The locations of several inter-
band transitions are included by
-12 the vertical arrows.
L A r A X U,K 1: r
Wave Vector (k)
510
D9 CUBIC CADMIUM SELENIDE (c-CdSe) Sl1
TABLE D9-1 Energies o/the CPs in the optical spectra o/c-CdSe at 300 K.
CPs eV
Eo 1.74
Eo+~ 2.15
EI 4.28"
EI+Al 4.48"
E2 -6.1
"2D-exciton energy.
obtained experimentally [5].

The fundamental absorption edge of c-CdSe corresponds to direct transitions (Eo)
from the highest valence band to the lowest conduction band at the r point. Literature
values for Eo of c-CdSe at 300 K vary from 1.66 to 1.74 eV (see Ref. [6]). PR meas-
urements yielded a value of .10-0.42 eV at room temperature (295 K) [7].
The higher interband transition energies E1, EI+~I' and E2 are, respectively, 4.28 eV
[A4,s (A3)~~ (AI) or L4•S (L.J)~L6 (LI)], 4.48 eV [A6 (A3)~A6 (AI) or L6 (L.J)~L6
(LI)], and 6.08 eV [X7 (XS)~X6 (Xl)] at room temperature [5]. The theoretical values
of these gaps are 4.197 eV (~,s~LJ, 4.546 eV (L6~LJ, and 6.069 eV (X7~~) [4].
Note that the optical spectra at the E/(EI+~I) region of c-CdSe [5] are much sharper
than those in some III-V (and group-IV elemental) semiconductors (see, e.g., Refs.
[8,9]). Such spectral feature cannot be explained within the framework of the one-
electron approximation. This fact clearly suggests a contribution of the excitonic ef-
fects (Le., 2D-exciton effects) in this spectral region.

Transmission measurements in the UVregion of epitaxial sphalerite (cubic) CdSe filrils
grown on BaF2 substrates were performed by Ludeke and Paul [10]. These authors re-
ported the SO-splitting energy.1o for cubic CdSe to be 0.28 eV.
Kim et al. [4] reported the room-temperature e(E) spectra of Zn..Cdl-zSe filrils meas-
ured by SE in the 1.5-6.5-eV spectral region, x ranging from 0 to 1.0. The epitaxial
films were grown on (lOO)GaAs substrates by MBE. They were single-phase zinc-
blende-type crystals over the entire composition range (x=O-1.0). The measured e(E)
spectra revealed distinct structures at energies of the Eo, Eo+.1o, E I , EI+~I' and E2 CPs.
The SE e(E) spectra of c-CdSe have also been measured by Janowitz et al. [11] in
the 2-25-eV spectral region at 90 K. The MBE-grown c-CdSe films were used in this
study. They identified the six CPs, E1, El+Al' Eo', E2, EI', and EI'+Al" together with
the 4d (Cd)-related peaks at E> 12 eV.
We list in Table D9-2 the room-temperature values of e=el+iEz, n*=n+ik, a, and R
for c-CdSe. They were obtained from Kim et al. (2.0Q':g).5 eV) [4]. No optical-
constant data have been reported near or below the Eo edge. Because of this, we listed
our MDF-calculated values for E<2.0 eV [5]. The MDF calculation suggests that the
EJ(Eo+!!.J structures can be characterized by a 3D Mo CP, the Ed(EI+/l I ) structures by

a 3D MI (or 2D Mo) CP, and the E2 structure by a DHO (a broadened 2D MI CP).
The (EI' EJ, (n, k), a, and R values in Table D9-2 are shown in Figs. D9-2-D9-5,
2D-exciton peak (Ex).
REFERENCES
1. N. Samarth, H. Luo, J. K. Furdyna, S. B. Qadri, Y. R. Lee, A. K. Ramdas, and N.
Otsuka, Appl. Phys. Lett. 54, 2680 (1989).
2. H. Jeon, J. Ding, A. V. Nurmikko, H. Luo, N. Samarth, J. K. Furdyna, W. A.
Bonner, and R. E. Nahory, Appl. Phys. Lett. 57, 2413 (1990).
3. M. A. Haase, J. Qui, J. M. DePuydt, and H. Chen, Appl. Phys. Lett. 59, 1272
(1991).
4. Y. D. Kim, M. V. Klein, S. F. Ren, Y. C. Chang, H. Luo, N. Samarthj, and J. K.
Furdyna, Phys. Rev. B 49, 7262 (1994).
5. S. Ninomiya and S. Adachi, 1. Appl. Phys. 78,4681 (1995).
6. V. Lunz, J. Kuhn, F. Goschenhofer, V.SchUssler, S. Einfeldt, C. R. Becker, and G.
Landwehr, 1. Appl. Phys. 80,6861 (1996).
7. W. Shan, J. J. Song, H. Luo, and J. K. Furdyna, Phys. Rev. B 50,8012 (1994).
8. S. Adachi,Phys. Rev. B 35, 7454 (1987).
10. R. Ludeke and W. Paul, Phys. Status Solidi 23, 413 (1967).
11. C. Janowitz, O. GUnther, G. Jungk, R. L. Johnson, P. V. Santos, M. Cardona, W.
Faschinger, and H. Sitter, Phys. Rev. B 50,2181 (1994).
D9 CUBIC CADMIUM SELENIDE (c-CdSe) 513
12.--.--.--.--~~--~~
11
10
9
8
7
6
W 5
4
3
2
1
o
-1 c-CdSe
-20~-1~~2~~--L--L--L-~
34567
Photon energy (eV)
Figure D9·2 £1(E) and £2(E) spectra for c-CdSe at 300 K.
E,(EX)! E,+.6.,
! (Ex)
3 n
~
2
c:
Eo+.6. o
1 Eo!
!
c-CdSe
0 1 2 3 4 5 6 7
Photon energy (eV)
Figure D9·3 neE) and k(E) spectra for c-CdSe at 300 K.
c-CdSe
1030 1 2 3 4 5 6 7
Photon energy (eV)
Figure D9·4 a.(E) spectrum for c-CdSe at 300 K.
0.5
c-CdSe E,+.6.,
(Ex)
E,(Ex) ! E2
0.4 ! !
0:
100+.6. 0
0.3
Eo!
!
0.20
1 2 3 4 5 6 7
Photon energy (eV)
Figure D9·5 R(E) spectrum for c-CdSe at 300 K.
D9 CUBIC CADMIUM SELENIDE (c-CdSe) 515
Table D9·2 Optical constants of c-CdSe at 300 K.
eV £1 £2 n k a (cm· l ) R
1.5 7.43 2.73 0.215
1.6 7.73 0.10 2.78 0.02 3.04E+03 0.222
1.7 8.29 0.58 2.88 0.10 1.75E+04 0.236
1.8 7.93 1.28 2.82 0.23 4. 14E+04 0.230
1.9 7.97 1.57 2.84 0.28 5.34E+04 0.233
2 8.00 1.80 2.85 0.32 6.41E+04 0.236
2.1 8.00 2.00 2.85 0.35 7.47E+04 0.237
2.2 7.85 2.30 2.83 0.41 9.06E+04 0.237
2.3 7.80 2.40 2.83 0.43 9.91E+04 0.237
2.4 7.70 2.60 2.81 0.46 1.12E+05 0.237
2.5 7.70 2.70 2.82 0.48 1.21E+05 0.238
2.6 7.70 2.80 2.82 0.50 1.3IE+05 0.240
2.7 7.70 2.90 2.82 0.51 1.41E+05 0.241
2.8 7.70 3.10 2.83 0.55 1.56E+05 0.244
2.9 7.75 3.25 2.84 0.57 1.68E+05 0.247
3 7.80 3.40 2.86 0.60 1.81E+05 0.250
3.1 7.80 3.60 2.86 0.63 1.98E+05 0.252
3.2 7.85 3.80 2.88 0.66 2.14E+05 0.256
3.3 7.90 4.00 2.89 0.69 2.31E+05 0.260
3.4 7.90 4.30 2.91 0.74 2.55E+05 0.265
3.5 7.95 4.60 2.93 0.79 2.79E+05 0.270
3.6 8.00 4.90 2.95 0.83 3.03E+05 0.276
3.7 8.10 5.30 2.98 0.89 3.33E+05 0.283
3.8 8.10 5.90 3.01 0.98 3.78E+05 0.293
3.9 8.00 6.60 3.03 1.09 4.31E+05 0.305
4 7.90 7.30 3.05 1.20 4.85E+05 0.316
4.1 7.40 8.20 3.04 1.35 5.61E+05 0.330
4.2 6.40 9.20 2.97 1.55 6.60E+05 0.346
4.3 4.70 9.60 2.77 1.73 7.54E+05 0.356
4.4 3.80 8.90 2.60 1.71 7.65E+05 0.346
4.5 3.10 8.70 2.48 1.75 7.99E+05 0.347
4.6 2.30 8.00 2.31 1.74 8.10E+05 0.338
4.7 2.00 6.90 2.14 1.61 7.67E+05 0.313
4.8 2.30 6.50 2.14 1.52 7.38E+05 0.296
4.9 2.50 6.20 2.14 1.45 7.19E+05 0.284
5 2.60 6.10 2.15 1.42 7.20E+05 0.280
5.1 2.70 6.00 2.15 1.39 7.20E+05 0.275
5.2 2.80 6.00 2.17 1.38 7.29E+05 0.274
5.3 2.90 6.10 2.20 1.39 7.46E+05 0.277
5.4 3.00 6.20 2.22 1.39 7.63E+05 0.279
5.5 3.00 6.40 2.24 1.43 7.95E+05 0.285
5.6 3.00 6.70 2.27 1.47 8.36E+05 0.294
5.7 2.90 7.00 2.29 1.53 8.84E+05 0.304
5.8 2.60 7.70 2.32 1.66 9.77E+05 0.327
5.9 1.90 8.20 2.27 1.81 1.08E+06 0.349
6 1.10 8.30 2.18 1.91 1.16E+06 0.366
6.1 0.30 8.00 2.04 1.96 1.21E+06 0.377
6.2 -0.20 7.50 1.91 1.96 1.23E+06 0.380
Table D9-2 Continued (e-CdSe).

eV £1 £2 n k a (cm· l ) R
6.3 -0.50 7.10 1.82 1.95 1.25E+06 0.381
6.4 -0.70 6.80 1.75 1.94 1.26E+06 0.382
6.5 -0.80 6.50 1.70 1.92 1.26E+06 0.380
D10 WURTZITE CADMIUM SELENIDE
(w-CdSe)
DIO.l GENERAL REMARKS

Cadmium selenide (CdSe) is a member of the II-VI semiconductor compounds. At
normal temperature and pressure it crystallizes in the hexagonal, wurtzite lattice (w-
CdSe). The applications of this material are for photovoltaic cells, photoconductive
materials, thin-film transistors, and optical-data recording (see references cited in Ref.
[1]). Because of the hexagonal (wurtzite) nature, it is optically anisotropic (i.e., opti-
cally uniaxial).
DIO.2 ELECTRONIC ENERGY·BAND STRUCTURE

The electronic energy-band structure of w-CdSe was investigated theoretically by sev-
eral authors (for recent studies, see Refs. [2-5]). Figure D1O-1 shows the electronic
energy-band structure of w-CdSe as calculated with an ETBT by Kobayashi et al. [6].
Table D1O-1 summarizes the room-temperature values of the interband transition ener-
gies in w-CdSe determined experimentally [7,8].
The fundamental absorption edge of w-CdSe (-1.7 eV) corresponds to direct transi-
tions from the highest valence band to the lowest conduction band at the r point (k=O).
The CP structures found in w-CdSe in the higher energy region than Eo are labeled E1a
«(J.;:::A, B, C). The original assignment of these structures was made by Cardona [8] by
analogy to the Ed(E1+A1) peaks in the zinc-blende-type crystals. The EIA and ElB peaks
may be related to transitions along the A axis (As~~) in the BZ which are split by the
SO interaction. These peaks are forbidden for Elle (i.e., only the E1C peak appears for
Elle polarization). The E lc structure may originate from transitions at the U point in the
BZ.
The Eo' structure (-6 eV) may originate from transitions at the M point in the BZ [9].
SE measurements also reveal several additional peaks, such as F I , E2 , EI', C', and D',
at energies higher than 7 eV [10]. These transitions correspond to higher CPs and core
excitons.
DIO.3 OPTICAL CONSTANTS

The room-temperature values of the static and high-frequency dielectric constants of w-
CdSe are reported to be £,=9.29 (10.16) and £_=6.20 (6.30) for EJ.e (Elle) [11], respec-
tively.
517
IOr------.--~------~~------~--~------~
Figure DIO·l Electronic energy-band structure of w-CdSe as calculated with an ETBT. (From
Kobayashi et at. [6].) The locations of several interband transitions are included by the vertical
arrows.
Optical properties in the reststrahlen region of w-CdSe have been studied by several
authors [11-15]. The reststrahlen parameters obtained by Geick et al. [11] were:
ffiTO=172 cm- 1 , ffiLO=21O cm- 1 , and y==7.0 cm- 1 (£,=9.29, £_=6.20) for El.c; ffiro=166 cm- 1 ,
ffiLO=211 cm- 1, and y==8.0 cm- 1 (£,=10.16, £_=6.30) for Elk. Note that unpolarized radia-
tion was used in the study of Refs. [13,14]. Further, single-crystalline specimens of
containing 1.5% and 0.5% S (sulfur) were used as "pure" CdSe in Refs. [12,15], re-
spectively. Optical absorption in the multiphonon absorption band region of w-CdSe
has also been studied using polarized [11] and unpolarized radiation [16].
OlD WURTZITE CADMIUM SELENIDE (w-CdSe) 519
TABLE 010-1 Energies of the CPs in the optical spectra ofw-CdSe at 300 K.
eV
CPs
El.c Ellc
EOA 1.732
EOB 1.761 1.761
Err. 2.161 2.161
EIA 4.lD
ElB 4.55
E 1C 4.85 4.78
Eo' 5.6 6.0
E2 ' 7.6,8.7 a
E 1' 9.5 a
aFar unpolarized light.
The neE) data in the transparent region of w-CdSe have been reported by Parsons et
al. [17] (T=4.2, 77, 300 K), Bond [18] (T=300 K), Lisitsa et al. [19] (T=I00-600 K),
and Terekhova et al. [20] (T=5 K). These data were taken for both the ordinary and
extraordinary rays, and presented in graphical [17,19,20] and/or tabular fonn [18,19].
The experimental uncertainty reported was 5xW4 [19]; in Bond [18] n was measured
to the fourth decimal. Ninomiya and Adachi [7] also detennined the 300-K neE) disper-
sion for w-CdSe using SE. We can, however, find that such data show no good agree-
ment with each other (e.g., no values at /..=0.8 J.!m and T=300 K are 2.580 [17], 2.6448
[18], and 2.683 [7], respectively). All these data, except in Ref. [17], showed the posi-
tive birefringence, i.e., &l=neCEllc)-no(EJ..c»O, for longer wavelengths. Only Ref. [17]
reports the negative birefringence, &l=ne-no<O, in the long wavelength region.
Optical properties near the Eo-exciton resonance region of w-CdS have been studied
by optical absorption [17,21-3] and fundamental reflectivity measurements [24,25].
Sharp resonances associated with the A and B excitons have been clearly found in such
optical absorption spectra. Absorption peaks due to the C exciton have also been identi-
fied in Ref. [17]. Optical absorption properties in the UV region of epitaxial w-CdSe
films grown on BaF2 substrates and bulk samples have also been reported in Refs.
[26,27].
The fundamental reflectivity in the interband transition region of w-CdSe has been
measured by Cardona [8], Lange and Iliev [27], Cardona and Harbeke [28], and
Freeouf [29]. The t.z values at the El peak for Ellc obtained from the KK analysis were
-7.4 [27] and -9.2 [29]. An t.z value at the El peak for E II c obtained using SE by Ni-
nomiya and Adachi [7] was -10.7. It should be noted that the dielectric function of tet-
rahedral semiconductors at the E2 (or E 1) peak, f-z(E2) [or f-z(E 1)], provides a sensitive
indication of the dielectric discontinuity between the sample and ambient [30,31]. The
sample with the cleanest surface, as well as the dielectric-function spectrum most accu-
rately representing that of the pure bulk material, can then be identified simply from
£iE2 ) values by using the "biggest is best" criterion. We can also recognize that the SE
R value at the EI peak (-0040 for EIIe, Ref. [7]) is considerably larger than that of Car-
dona and Harbeke (-0.3, Ref. [28]).
The optical-constant data in the interband transition region of w-CdSe have been
determined using SE in the 1.2-5.3-eV region at 300 K by Ninomiya and Adachi [7],
in the 1.5-5.5-eV region at 15-550 K by Logothetidis et al. [9], and in the 2-25-eV
region at 90 K by Janowitz et al. [10]. The samples used in these studies were bulk sin-
gle crystals. It should be noted that the (£1' €.z) data reported by Logothetidis et al. [9] in
graphical form are only at 15, 210, 400, and 500 K.
Optical properties in the vacuum-UVregion (36-150 eV) of some II-VI compounds,
including CdSe, have been studied by Cardona and Haensel [32]. The CdSe film used
was obtained by vacuum evaporation on a noncrystalline substrate, and thus it was
polycrystalline. Only a broad structure peaking at -75 eV was observed in the absorp-
tion spectrum of polycrystalline CdSe [32].
Tables DlO-2 and DlO-3 list the room-temperature values of e=el+i€.z, n*=n+ik, lX,
and R for w-CdSe for E.lc and EIIe, respectively. A set of the optical constants for
E:::;O.1 eV were calculated using the reststrahlen parameters of Geick et al. [11]. The n
(£1) data below the Eo absorption edge (0.310:::;£:::;1.24 eV) were taken from Bond [18].
A complete set of the optical constants in the interband transition region were taken
from Ninomiya and Adachi [7] for 1.3:::;£:::;5.3 eV and from Cardona and Harbeke [28]
for 6:::;£:::;10 eV. The imaginary constants, k and lX, for E?:40 eV were obtained from
Cardona and Haensel [32]. Since no polarization dependence should exist in this spec-
tral region (i.e., E?:40 eV), we listed these data only in Table 010-2.
The (£1' €.z), (n, k), lX, and R values in Tables DlO-2 and DlO-3 are plotted in Figs.
DI0-2-DlO-4. The vertical arrows in the figures indicate the positions of each CP and
2D EI exciton peak (Ex). It has been shown [7,33] that such optical-constant spectra
can be successfully explained by the MDF.
REFERENCES
1. R. Tenne, R. Jliger-Waldau, M. Lux-Steiner, E. Bucher, J. Rioux, and C. Levy-
Clement, Phys. Rev. B 42,1763 (1990).
3. P. Schroer, P. Kri.iger, and J. Pollmann, Phys. Rev. B 48,18264 (1993).
10780 (1994).
5. D. Vogel, P. Kri.iger, and J. Pollman, Phys. Rev. B 54,5495 (1996).
(1983).
7. S. Ninomiya and S. Adachi, 1. Appl. Phys. 78, 4681 (1995).
8. M. Cardona, Phys. Rev. 129, 1068 (1963).
DlO WURTZITE CADMIUM SELENIDE (w-CdSe) 521
9. S. Logothetidis, M. Cardona, P. Lautenschlager, and M. Garriga, Phys. Rev. B 34,

2458 (1986).
10. C. Janowitz, O. GUnther, G. Jungk, R. L. Johnson, P. V. Santos, M. Cardona, W.
Faschinger, and H. Sitter, Phys. Rev. B 50, 2181 (1994).
11. R. Geick, C. H. Perry, and S. S. Mitra,]. Appl. Phys. 37,1994 (1966).
13. A. Manabe, A. Mitsuishi, and H. Yoshinaga,]pn. f. Appl. Phys. 6,593 (1967).
14. A. Hadni, J. Claude!, and P. Strimer, Phys. Status Solidi 26, 241 (1968).
15. R. Beserman and M. Balkanski, Phys. Rev. B 1,608 (1970).
16. R. Beserman, Solid State Commun. 23, 323 (1977).
17. R. B. Parsons, W. Wardzynski, and A. D. Yoffe, Proc. Roy. Soc. A 262, 120
(1961).
18. W. L. Bond, f. Appl. Phys. 36, 1674 (1965).
Solidi 31, 389 (1969).
20. S. F. Terekhova, N. A. Onishchenko, O. N. Talenskii, and S. A. Pendur, Phys.
Status Solidi B 131,207 (1985).
21. C. Konak, J. Dillinger, and V. Prosser, in II-VI Semiconducting Compounds, edit-
ed by D. G. Thomas (Benjamin, New York, 1967), p. 850.
22. J. Voigt, F. Spiegelberg, and M. Senoner, Phys. Status Solidi B 91, 189 (1979).
23. J. P. Sokoloff, M. Joffre, B. Fluegel, D. Hulin, M. Lindberg, S. W. Koch, A. Mi-
gus, A. Antonetti, and N. Peyghambarian, Phys. Rev. B 38,7615 (1988).
24. R. G. Wheeler and J. O. Dimmock, Phys. Rev. 125, 1805 (1962).
646 (1978).
26. R. Ludeke and W. Paul, Phys. Status Solidi 23, 413 (1967).
27. H. Lange and I. A. Iliev, Phys. Status Solidi B 84,569 (1977).
30. D. E. Aspnes, f. Vac. Sci. Technol. 17, 1057 (1980).
33. S. Adachi, f. Appl. Phys. 68, 1192 (1990).
...
~~-
4
\ w-CdSe
w 2 -- Elc
- - - Ellc \
01- '.
_2L-~~~-L~~--~L-~~
14 E1B(Ex)U E1dEx)
12
10 E1A(Ex) I 1\
+J ,
wC\l 8 \,
6
4
2
o 4 6 8 10
Photon energy (eV)
Figure DlO·2 eiE) and £2(E) spectra for w-CdSe at 300 K.
3
~
w-CdSe
2
c
Elc
1 Ellc ~-
0
E1B(EX)!! E1dEx)
2 E1A(Ex)! ( \ E2'
~ ! l
1 "",-/--"'--....
'" '"
0 4 6 8 10
Photon energy (eV)
Figure DIO·3 nee) and k(E) spectra for w-CdSe at 300 K.
010 WURTZITE CADMIUM SELENIDE Cw-CdSe) 523
107 .-----...--r-~"T·I----r""""T""T""rTTTTlr---t.....,.--,.",...'IIO.4
~ ~~ W-CdSe..),~ ~ 0.3
o . 0.2 a:::
-;; 104 :'.....
103 (a) Elc 0.1
102L-~~~.1~~~~~~~~0
'I
106 }.r'- 0.4

IE 105 /// ------- ~ 0.3 a:::
o ---'
-104
~
/"'.
. (b) Ell c
0.2
0 .1
103
102 ,I 0
10- 1 100 101 102
Photon energy (eV)
Figure 010·4 ai..,E) and RCE) spectra for w-CdSe at 300 K.
Table DIO·2 Optical constants ofw-CdSefor E..Lc at 300 K.

eV £1 £Z n k a (cm· l ) R
0.01 9.824 0.054 3.134 0.0087 8.81E+00 0.267
0.02 13.71 0.470 3.704 0.063 1.29E+02 0.331
0.022 16.91 1.057 4.115 0.128 2.86E+02 0.371
0.023 20.04 1.860 4.482 0.208 4.84E+02 0.404
0.024 25.99 4.058 5.113 0.397 9.66E+02 0.455
0.0245 31.38 6.927 5.636 0.615 1.53E+03 0.492
0.025 40.25 14.06 6.437 1.092 2.77E+03 0.544
0.0255 52.49 37.54 7.649 2.454 6.34E+03 0.621
0.0259 31.79 85.51 7.843 5.451 1.43E+04 0.709
0.026 12.49 92.38 7.270 6.353 1.67E+04 0.733
0.0261 -8.419 90.08 6.405 7.032 1.86E+04 0.754
0.0262 -25.08 79.84 5.413 7.375 1.96E+04 0.773
0.0265 -39.21 42.24 3.035 6.959 1.87E+04 0.812
0.027 -27.50 15.34 1.412 5.431 1.49E+04 0.840
0.0275 -18.16 7.384 0.850 4.345 1.21E+04 0.848
0.028 -12.49 4.265 0.595 3.584 1.02E+04 0.845
0.029 -6.311 1.926 0.379 2.541 7.47E+03 0.819
0.03 -3.084 1.086 0.305 1.782 5.42E+03 0.750
0.032 0.196 0.481 0.598 0.402 1.31E+03 0.119
0.034 1.841 0.269 1.360 0.099 3.40E+02 0.025
0.036 2.823 0.171 1.681 0.051 1.85E+02 0.065
0.038 3.474 0.117 1.864 0.031 1.21E+02 0.091
Table D10-2 Continued (w-CdSe, EJ.c).

eV 1:1 1:2 n k a (em· l ) R
0.04 3.934 0.085 1.983 0.021 8.72E+01 0.109
0.05 5.052 0.027 2.248 0.0061 3.08E+01 0.148
0.06 5.484 0.013 2.342 0.0027 1.66E+01 0.161
om 5.704 0.0071 2.388 0.0015 1.06E+01 0.168
0.08 5.834 0.0044 2.415 0.00092 7.45E+00 0.172
0.09 5.918 0.0030 2.433 0.00061 5.56E+00 0.174
0.1 5.975 0.0021 2.444 0.00043 4.33E+00 0.176
0.31 5.998 2.4491 0.177
0.326 6.002 2.4498 0.177
0.344 6.007 2.4509 0.177
0.365 6.011 2.4518 0.177
0.387 6.018 2.4532 0.177
0.413 6.013 2.4522 0.177
0.443 6.033 2.4562 0.178
0.477 6.047 2.4590 0.178
0.516 6.058 2.4612 0.178
0.563 6.072 2.4642 0.179
0.62 6.092 2.4682 0.179
0.689 6.117 2.4732 0.180
0.775 6.159 2.4818 0.181
0.885 6.215 2.4929 0.183
1.03 6.316 2.5132 0.186
1.24 6.504 2.5502 0.191
1.3 6.675 2.584 0.195
1.35 6.742 2.597 0.197
1.4 6.825 2.612 0.199
1.45 6.926 2.632 0.202
1.5 7.042 2.654 0.205
1.55 7.199 2.683 0.209
1.6 7.412 2.722 0.214
1.65 7.638 2.764 0.220
1.7 7.868 2.805 0.225
1.75 7.857 1.277 2.812 0.227 4.03E+04 0.229
1.8 7.714 1.475 2.790 0.264 4.82E+04 0.227
1.85 7.599 1.541 2.771 0.278 5.22E+04 0.225
1.9 7.538 1.578 2.760 0.286 5.51E+04 0.224
1.95 7.510 1.638 2.756 0.297 5.87E+04 0.223
2 7.471 1.713 2.751 0.311 6.31E+04 0.223
2.05 7.467 1.779 2.752 0.323 6.72E+04 0.224
2.1 7.485 1.859 2.757 0.337 7.18E+04 0.225
2.15 7.472 1.954 2.756 0.354 7.73E+04 0.226
2.2 7.430 2.063 2.751 0.375 8.36E+04 0.226
2.25 7.377 2.l25 2.744 0.387 8.83E+04 0.225
2.3 7.329 2.196 2.737 0.401 9.35E+04 0.225
2.35 7.296 2.244 2.732 0.411 9.79E+04 0.225
2.4 7.244 2.285 2.724 0.419 1.02E+05 0.224
2.45 7.222 2.321 2.721 0.427 1.06E+05 0.224
2.5 7.211 2.351 2.720 0.432 1.10E+05 0.224
2.55 7.201 2.381 2.719 0.438 1.13E+05 0.224
2.6 7.199 2.420 2.720 0.445 1.17E+05 0.225
DIO WURTZITE CADMIUM SELENIDE (w-CdSe) 525
Table D10-2 Continued (w-CdSe. E.1c).
eV £\ £2 n k a (cm'\) R
2.65 7.198 2.469 2.721 0.454 1.22E+05 0.225
2.7 7.192 2.507 2.721 0.461 1.26E+05 0.226
2.75 7.197 2.555 2.723 0.469 1.31E+05 0.227
2.8 7.206 2.594 2.726 0.476 1.35E+05 0.227
2.85 7.214 2.643 2.729 0.484 1.40E+05 0.228
2.9 7.227 2.692 2.733 0.493 1.45E+05 0.229
2.95 7.239 2.752 2.737 0.503 1.50~+O5 0.230
3 7.260 2.818 2.743 0.514 1.56E+05 0.231
3.05 7.280 2.880 2.748 0.524 1.62E+05 0.233
3.1 7.307 2.945 2.756 0.534 1.68E+05 0.234
3.15 7.331 3.012 2.762 0.545 1.74E+05 0.235
3.2 7.377 3.090 2.773 0.557 1.81E+05 0.237
3.25 7.420 3.180 2.783 0.571 1.88E+05 0.240
3.3 7.502 3.273 2.801 0.584 1.95E+05 0.242
3.35 7.580 3.373 2.817 0.599 2.03E+05 0.245
3.4 7.628 3.448 2.828 0.610 2.lOE+05 0.247
3.45 7.687 3.565 2.843 0.627 2. 19E+05 0.250
3.5 7.746 3.682 2.857 0.644 2.29E+05 0.253
3.55 7.813 3.819 2.873 0.665 2.39E+05 0.256
3.6 7.886 3.975 2.891 0.687 2.51E+05 0.259
3.65 7.936 4.117 2.905 0.709 2.62E+05 0.262
3.7 7.983 4.249 2.918 0.728 2.73E+05 0.265
3.75 8.043 4.432 2.935 0.755 2.87E+05 0.269
3.8 8.131 4.722 2.961 0.797 3.07E+05 0.274
3.85 8.177 5.017 2.981 0.842 3.28E+05 0.280
3.9 8.203 5.336 2.999 0.890 3.52E+05 0.285
3.95 8.187 5.772 3.017 0.957 3.83E+05 0.292
4 8.071 6.271 3.024 1.037 4.20E+05 0.300
4.05 7.814 6.712 3.010 1.115 4.58E+05 0.305
4.1 7.339 7.123 2.964 1.202 5.ooE+05 0.309
4.15 6.906 7.288 2.911 1.252 5.27E+05 0.309
4.2 6.411 7.299 2.839 1.285 5.47E+05 0.307
4.25 6.188 7.208 2.801 1.287 5.54E+05 0.304
4.3 5.996 7.220 2.773 1.302 5.67E+05 0.304
4.35 5.846 7.307 2.757 1.325 5.84E+05 0.305
4.4 5.629 7.389 2.731 1.353 6.03E+05 0.306
4.45 5.396 7.497 2.705 1.386 6.25E+05 0.309
4.5 5.180 7.530 2.676 1.407 6.42E+05 0.309
4.55 4.942 7.601 2.646 1.436 6.62E+05 0.311
4.6 4.802 7.631 2.629 1.452 6.77E+05 0.312
4.65 4.560 7.764 2.604 1.491 7.03E+05 0.315
4.7 4.249 7.845 2.566 1.529 7.28E+05 0.318
4.75 3.861 7.894 2.515 1.569 7.56E+05 0.321
4.8 3.435 7.851 2.450 1.602 7.80E+05 0.323
4.85 3.142 7.783 2.402 1.620 7.97E+05 0.323
4.9 2.775 7.533 2.324 1.621 .8.05E+05 0.320
4.95 2.508 7.279 2.259 1.611 8.08E+05 0.316
5 2.400 7.060 2.220 1.590 8.06E+05 0.311
5.05 2.321 6.874 2.188 1.571 8.04E+05 0.307
5.1 2.236 6.613 2.147 1.540 7.96E+05 0.300
Table D10·2 Continued (w-CdSe, E.lc).

eV £1 £2 n k a (em· 1) R
5.15 2.244 6.486 2.134 1.520 7.94E+05 0.296
5.2 2.220 6.338 2.114 1.499 7.90E+05 0.292
5.25 2.185 6.240 2.097 1.488 7.92E+05 0.289
5.3 2.181 6.177 2.089 1.478 7.94E+05 0.287
6 1.22 2.46 1.41 0.87 5.30E+05 0.141
6.2 1.21 2.47 1.41 0.88 5.52E+05 0.143
6.4 1.19 2.51 1.41 0.89 5.77E+05 0.145
6.6 1.12 2.54 1.40 0.91 6.09E+05 0.150
6.8 0.95 2.58 1.36 0.95 6.54E+05 0.159
7 0.85 2.51 1.32 0.95 6.73E+05 0.159
7.2 0.72 2.45 1.28 0.96 6.98E+05 0.162
7.4 0.55 2.37 1.22 0.97 7.28E+05 0.169
7.6 0.39 2.27 1.16 0.98 7.55E+05 0.175
7.8 0.37 2.10 1.12 0.94 7.42E+05 0.166
8 0.39 1.99 1.10 0.91 7.35E+05 0.159
8.2 0.28 1.95 1.06 0.92 7.63E+05 0.166
8.4 0.21 1.85 1.02 0.91 7.73E+05 0.169
8.6 0.15 1.70 0.96 0.88 7.67E+05 0.167
8.8 0.15 1.58 0.93 0.85 7.55E+05 0.162
9 0.13 1.44 0.89 0.81 7.39E+05 0.158
9.5 0.24 1.17 0.85 0.69 6.65E+05 0.128
10 0.37 1.01 0.85 0.59 6.02E+05 0.099
40 0.060 2.44E+05
50 0.052 2.65E+05
60 0.048 2.90E+05
65 0.046 3.03E+05
70 0.044 3.10E+05
71 0.043 3.lOE+05
75 0.040 3.06E+05
80 0.036 2.90E+05
90 0.026 2.35E+05
100 Om8 1.87E+05
110 0.013 1.47E+05
120 0.010 1.23E+05
130 0.0084 1.1IE+05
140 0.0076 1.08E+05
Table D10·3 Optical constants ofw-CdSefor EI/c at 300 K.

eV £1 £2 n k a (em-I) R
om 10.82 0.077 3.289 0.012 1.18E+01 0.285
0.02 15.55 0.646 3.944 0.082 1.66E+02 0.355
0.022 19.35 1.423 4.401 0.162 3.6IE+02 0.397
0.023 22.97 2.453 4.800 0.256 5.96E+02 0.430
0.024 29.61 5.137 5.462 0.470 1.14E+03 0.480
0.0245 35.38 8.435 5.989 0.704 1.75E+03 0.515
0.D25 44.33 15.98 6.762 1.182 2.99E+03 0.561
0.0255 56.40 37.53 7.879 2.382 6. 16E+03 0.627
010 WURTZITE CADMIUM SELENIDE (w-CdSe) 527
Table DlO·3 Continued (w-CdSe, EI/c).
eV £1 £2 n k <X (em· l ) R
0.0259 48.08 81.34 8.443 4.817 1.26E+04 0.699
0.026 35.29 93.41 8.220 5.682 1.50E+04 0.720
0.0261 17.18 100.8 7.729 6.524 1.73E+04 0.740
0.0262 -3.150 100.7 6.987 7.209 1.91E+04 0.759
0.0263 -21.16 93.15 6.098 7.638 2.04E+04 0.776
0.0265 -40.77 67.79 4.378 7.742 2.08E+04 0.803
0.027 -37.03 25.78 2.011 6.409 1.75E+04 0.840
0.0275 -25.69 12.07 1.161 5.200 1.45E+04 0.854
0.028 -18.21 6.806 0.784 4.339 1.23E+04 0.857
0.029 -9.971 2.980 0.467 3.192 9.38E+03 0.849
0.03 -5.6% 1.652 0.343 2.411 7.33E+03 0.820
0.032 -1.398 0.718 0.295 1.219 3.95E+03 0.627
0.034 0.735 0.398 0.886 0.224 7.73E+02 0.018
0.036 2.000 0.251 1.417 0.088 3.23E+02 0.031
0.Q38 2.834 0.172 1.684 0.051 1.%E+02 0.065
0.04 3.423 0.125 1.850 0.034 1.37E+02 0.089
0.04 3.423 0.125 1.850 0.034 1.37E+02 0.089
0.05 4.847 0.040 2.202 0.0090 4.57E+01 0.141
0.06 5.395 0.018 2.323 0.0040 2.42E+01 0.158
0.07 5.674 0.010 2.382 0.0022 1.54E+01 0.167
0.08 5.838 0.0064 2.416 0.0013 1.08 E+O 1 0.172
0.09 5.944 0.0043 2.438 0.00088 8.02E+00 0.175
0.1 6.017 0.0030 2.453 0.00061 6.23E+00 0.177
0.31 6.093 2.4685 0.179
0.326 6.098 2.4694 0.179
0.344 6.102 2.4702 0.179
0.365 6.108 2.4714 0.180
0.387 6.114 2.4726 0.180
0.413 6.121 2.4741 0.180
0.443 6.129 2.4757 0.180
0.477 6.142 2.4784 0.181
0.516 6.149 2.4798 0.181
0.563 6.170 2.4840 0.181
0.62 6.187 2.4873 0.182
0.689 6.215 2.4930 0.183
0.775 6.254 2.5008 0.184
0.885 6.317 2.5133 0.186
1.03 6.417 2.5331 0.188
1.24 6.603 2.5696 0.193
1.3 6.718 2.592 0.196
1.35 6.783 2.604 0.198
1.4 6.858 2.619 0.200
1.45 6.950 2.636 0.202
1.5 7.062 2.657 0.205
1.55 7.219 2.687 0.209
1.6 7.407 2.722 0.214
1.65 7.588 2.755 0.218
1.7 7.804 2.793 0.224
1.75 7.943 0.889 2.823 0.157 2.79E+04 0.229
1.8 7.910 1.228 2.821 0.218 3.97E+04 0.230
Table DlO-3 Continued (w-CdSe, Elle).

eV £1 £z n k a (em-I) R
1.85 7.794 1.377 2.803 0.246 4.61E+04 0.228
1.9 7.732 1.444 2.793 0.259 4.98E+04 0.227
1.95 7.708 1.518 2.790 0.272 5.38E+04 0.227
2 7.704 1.552 2.789 0.278 5.64E+04 0.227
2.05 7.727 1.665 2.796 0.298 6.19E+04 0.229
2.1 7.769 1.791 2.805 0.319 6.80E+04 0.231
2.15 7.768 1.948 2.809 0.347 7.56E+04 0.232
2.2 7.705 2.094 2.801 0.374 8.34E+04 0.232
2.25 7.617 2.198 2.788 0.394 8.99E+04 0.231
2.3 7.551 2.267 2.778 0.408 9.51E+04 0.230
2.35 7.508 2.336 2.772 0.421 1.00E+05 0.230
2.4 7.468 2.381 2.766 0.430 1.05E+05 0.230
2.45 7.431 2.474 2.763 0.448 1. 11E+05 0.230
2.5 7.411 2.498 2.760 0.453 1.15E+05 0.230
2.55 7.394 2.533 2.758 0.459 1.19E+05 0.230
2.6 7.381 2.581 2.757 0.468 1.23E+05 0.231
2.65 7.359 2.642 2.755 0.480 1.29E+05 0.231
2.7 7.343 2.700 2.754 0.490 1.34E+05 0.231
2.75 7.329 2.777 2.754 0.504 1.41E+05 0.232
2.8 7.323 2.823 2.754 0.513 1.46E+05 0.233
2.85 7.319 2.887 2.756 0.524 1.51E+05 0.233
2.9 7.321 2.942 2.758 0.533 1.57E+05 0.234
2.95 7.323 3.003 2.760 0.544 1.63E+05 0.235
3 7.324 3.077 2.763 0.557 1.69E+05 0.236
3.05 7.333 3.146 2.767 0.568 1.76E+05 0.237
3.1 7.347 3.164 2.770 0.571 1.79E+05 0.238
3.15 7.359 3.226 2.774 0.581 1.86E+05 0.239
3.2 7.371 3.307 2.779 0.595 1.93E+05 0.240
3.25 7.388 3.378 2.785 0.606 2.00E+05 0.242
3.3 7.445 3.458 2.798 0.618 2.07E+05 0.244
3.35 7.475 3.549 2.806 0.632 2. 15E+05 0.246
3.4 7.495 3.632 2.813 0.646 2.23E+05 0.248
3.45 7.532 3.733 2.823 0.661 2.31E+05 0.250
3.5 7.561 3.837 2.832 0.678 2.40E+05 0.252
3.55 7.593 3.952 2.842 0.695 2.50E+05 0.254
3.6 7.627 4.060 2.852 0.712 2.60E+05 0.257
3.65 7.660 4.162 2.862 0.727 2.69E+05 0.259
3.7 7.701 4.291 2.874 0.747 2.80E+05 0.261
3.75 7.738 4.422 2.885 0.766 2.91E+05 0.264
3.8 7.791 4.593 2.901 0.791 3.05E+05 0.268
3.85 7.829 4.760 2.915 0.817 3.19E+05 0.271
3.9 7.876 4.935 2.930 0.842 3.33E+05 0.274
3.95 7.915 5.149 2.946 0.874 3.50E+05 0.279
4 7.952 5.403 2.964 0.912 3.70E+05 0.283
4.05 7.977 5.674 2.980 0.952 3.91E+05 0.288
4.1 7.997 5.972 2.998 0.996 4. 14E+05 0.294
4.15 7.987 6.211 3.009 1.032 4.34E+05 0.298
4.2 7.931 6.577 3.020 1.089 4.64E+05 0.304
4.25 7.877 6.865 3.027 1.134 4.89E+05 0.308
4.3 7.751 7.302 3.033 1.204 5.25E+05 0.315
DlO WURTZITE CADMIUM SELENIDE (w-CdSe) 529
Table DlO-3 Continued (w-CdSe, EI/c).

eV £1 Ez n k <X (em-I) R
4.35 7.661 7.641 3.040 1.257 5.54E-t05 0.321
4.4 7.510 8.027 3.042 1.320 5.89E+05 0.327
4.45 7.311 8.443 3.040 1.389 6.27E+05 0.334
4.5 7.032 8.893 3.031 1.467 6.69E+05 0.341
4.55 6.488 9.528 3.001 1.587 7.32E+05 0.352
4.6 6.135 9.823 2.976 1.650 7.70E+05 0.358
4.65 5.501 10.23 2.925 1.748 8.24E+05 0.366
4.7 4.778 10.48 2.855 1.836 8.75E+05 0.374
4.75 3.955 10.66 2.768 1.925 9.27E+05 0.382
4.8 3.073 10.58 2.654 1.993 9.70E+05 0.387
4.85 2.467 10.45 2.569 2.033 1.00E+06 0.391
4.9 1.665 10.06 2.436 2.066 1.03E+06 0.394
4.95 0.988 9.555 2.301 2.076 1.04E+06 0.395
5 0.639 9.147 2.215 2.065 1.05E+06 0.393
5.05 0.344 8.752 2.133 2.051 1.05E+06 0.392
5.1 0.062 8.127 2.024 2.008 1.04E+06 0.386
5.15 -0.039 7.733 1.%1 1.971 1.03E+06 0.380
5.2 -0.078 7.204 1.888 1.908 1.01E+06 0.370
5.25 -0.095 6.781 1.828 1.854 9.87E+05 0.361
5.3 0.000 6.625 1.820 1.820 9.78E+05 0.354
6 0.80 2.79 1.36 1.02 6.23E+05 0.178
6.2 1.02 2.67 1.39 0.96 6.03E+05 0.162
6.4 1.02 2.76 1.41 0.98 6.36E+05 0.167
6.6 0.94 2.87 1.41 1.02 6.83E+05 0.176
6.8 0.73 2.87 1.36 1.06 7.28E+05 0.186
7 0.60 2.86 1.33 1.08 7.65E+05 0.193
7.2 0.45 2.80 1.28 1.09 7.97E+05 0.199
7.4 0.28 2.64 1.21 1.09 8.18E+05 0.203
7.6 0.11 2.40 1.12 1.07 8.24E+05 0.206
7.8 0.13 2.20 1.08 1.02 8.07E+05 0.195
8 0.21 2.12 1.08 0.98 7.95E+05 0.183
8.2 0.16 2.08 1.06 0.98 8.15E+05 0.185
8.4 0.028 1.97 1.00 0.99 8.40E+05 0.196
8.6 -0.057 1.82 0.94 0.97 8.46E+05 0.201
8.8 -0.072 1.62 0.88 0.92 8.21E+05 0.196
9 -0.051 1.46 0.84 0.87 7.94E+05 0.189
9.5 0.073 1.17 0.79 0.74 7. 13E+05 0.158
10 0.17 0.95 0.76 0.63 6.39E+05 0.131
D11 CADMIUM TELLURIDE
(CclTe)
DU.I GENERAL REMARKS

Cadmium telluride (CdTe) is a direct-band-gap semiconductor (Eg-1.5 eV at 300 K)
crystallizing in the cubic, zinc-blende structure. CdTe has been devoted to the devel-
opment of semiinsulating crystals for applications in RT y-ray detectors and as electro-
optic and acoustooptic devices (see, e.g., [1]). As thin films, this material has also been
used in solar cells, liquid-crystal imaging devices, and IR optics [2]. CdTe(lll)B films
with a 5 in. diameter have been grown on Si(lOO) substrates by MBE [3].
DU.2 ELECTRONIC ENERGY·BAND STRUCTURE

The electronic energy-band structure of CdTe was investigated theoretically by several
authors (for recent studies, see Refs. [4-7]). We show in Fig. Dll-l the electronic en-
ergy-band structure of CdTe as calculated with an ENPM by Chelikowsky and Cohen
[8]. Table Dll-llists the experimental CP energies in CdTe [9-13].
The lowest-direct-band-gap transitions in CdTe occur at the r point in the BZ. The
corresponding band-gap energies Eo and Eo+flo of ZnTe are, respectively, 1.5 eV [rs
(rIS)~r6 WI)] and 2.45 eV [r7 (rIJ~r6 (rl)] at room temperature.
The higher interband transition energies EI , EI+~I' and Eo' are, respectively, 3.55 eV
[1\05 (A';>~A" (AI) or L.to5 ~)~Lc. (~)], 4.13 eV [A" (A3)~~ (AI) or L6 (l.:J)~Lc.
(LI)], and 5.00 eV [r8 (rIS)~r7 (rls)] at room temperature. The theoretical values-of
these gaps are 3.47 eV (L.to5~Lc.), 4.00 eV (L.to5~W, and 5.36 eV (rS~r7) [8], respec-
tively. It should be noted that the optical spectra at the Ed(EI+~I) region of CdTe
[11-13] are much sharper than those in some III-V (and group-IV elemental) semi-
conductors (see, e.g., Refs. [14,15]). Such spectral feature cannot be explained within
the framework of the one-electron approximation. This fact clearly suggests a con-
tribution of the excitonic effects (i.e., 2D-exciton effects) in this spectral region. The
MDF analysis enabled us to determine the 2D-exciton binding energies,
G I2D-Gd 2D-O.24 eV [12].
The Ez, EI', and EI'+~I peaks in CdTe have also been observed at 5.30 eV [X7
(XJ~~ (XI)]' -6.5 eV rL.t.s (l.:J)~Lc. (l.:J)], and -7.2 eV [Lc. (l.:J)~Lc. (l.:J)], respec-
tively. The theoretically obtained values are 5.08 eV (X7~XJ, 6.83 eV (L405~LJ, and
7.36 eV (Lc.~W [8], respectively.
530
D11 CADMIUM TELLURIDE (CdTe) 531
6
eV l6
to u...L
_4•5_ _
l6
.... -2
-4
CdTe
-8
42.~ __ ~ ____ ~ __________ ~__ ~~ __________-J

l A r Il X U.K t r
Figure DU·1 Electronic energy-band structure of CdTe as calculated with an ENPM. (From
Chelikowsky and Cohen [8].) The locations of several interband transitions are included by the
vertical arrows.
TABLE DU·1 Energies of the CPs in the optical spectra ojCdTe at 300 K.
CPs eV
Eo 1.5
Eo+~ 2.45
EI 3.55
E 1+111 4.13
Eo' 5.00
E2 5.30
E 1' -6.5
E 1'+111 -7.2
Dll.3 OPTICAL CONSTANTS

The room-temperature (296-K) value of the static dielectric constant lOs for CdTe is re-
ported to be 11.00 [16]. The temperature coefficient E.(T=O K)"ldE/dT is also reported
to be 2.27xlO-4 Kl with an accuracy of ±O.02xlO-4 KI [16]. Far-IR optical studies re-
port the 300-K values of the high-frequency dielectric constant 10_ to as 6.7±O.3 [17]
and 7.194±O.008 [18].

Optical properties in the reststrahlen region of CdTe have been studied by several
authors [19,20]. These studies report a set of the reststrahlen parameters which enable
to calculate the optical dispersion in this spectral region: 001'0=141 cm-I , 001.0=169 cm-I ,
£,=10.2, £_=7.1, and "(=6.6 cm- I (T=300 K, Ref. [19]); 001'0=140.5 cm- I , 001.0=167.5 cm- I ,
£,=10.5, £_=7.3, and "(=5 cm- I (T=293 K, Ref. [20]). Vodop'yanov et al. [20] performed
a detailed study on the reststrahlen spectrum that demonstrated changes in R with sur-
face preparation. Optical absorption in the multiphonon absorption band region of
CdTe was also studied in Refs. [17,18], and the two-phonon combination bands were
successfully identified [18].
Optical absorption at the fundamental band edge of CdTe has been studied experi-
mentally [21-5]. Fine structures of a discrete exciton series have been observed in the
measured spectra [22-4]. Figure D11-2 shows, as an example, the a.(E) spectra in the
temperature range between 80 and 413 K measured by Kofuik et al. [22]. The curves of
Marple [21] are drawn, for the sake of comparison, on the same figure. The detail of
absorption at the exciton region (n=1 ground state) is shown in the inset. The optical
absorption properties of CdTe at temperatures up to 1104 K have been reported by
Mullins et al. [25]. The data have been well fitted by assuming the energy gap to have
a linear temperature coefficient of 0.34±O.02 me V/K. The hydrostatic-pressure depen-
dence of the optical absorption edge of CdTe has also been reported for pressures up to
11 GPa [26]; a detailed discussion has been given of the structural phase transition in
this study. The fundamental reflectivity properties at the Eo-edge exciton region of
CdTe have also been reported by several authors [27,28].
The refractive-index dispersion in the transparent region of CdTe has been measured
by Adachi et al. [11], Marple [29], and Andre and Dang [30]. The CdTe crystals were
bulk CdTe crystals [11,29] and MBE-grown films [30]. Measurement techniques were
the prism refraction method [29] and SE [11]. Andre and Dang [30] determined the
neE) spectra by analyzing interference fringes in reflectivity spectra of the thin films.
Such neE) spectra were fitted with the first-order Sellmeier equation of Eq. (D2.1)
[11,29,30]. As a byproduct [i.e., A---?oo !lm in Eq. (D2.1)], the high-frequency dielectric
constant of CdTe was determined to be £_=7.21 [29]. The neE) data by Marple [29] and
Adachi et al. [11] have been shown in Fig. 5.17 (Sec. 5.2.3) by the open and solid cir-
cles, respectively.
Andre and Dang [30] reported the neE) data not only at 300 K but also at low tem-
perature (4 K). The temperature coefficient of the refractive index has also been deter-
mined by Bertolotti et al. [31] using a prism technique. They obtained a value of
dnldT-lxlO-4 KI for wavelengths between 1.4 and lO!lm [31].
The fundamental reflectivity spectra in the interband transition region of CdTe have
been measured by a number of authors [10,32-6]. By performing the KK analysis, the
(n, k) or (£1' Ez) values were extracted in the 0-23-eV region at 300 K [10], in the 1.5-
5-eV region at 25 and 300 K [32], in the 0-20-eV region at 297 K [34], and in the 0.6-
3-eV region at 300 K [36]. The CPs observed in these studies were correlated with vari-
ous electronic transitions in the BZ [33,35].
o
BO'K ( ")
t\ -
K
[Crri~ 413'K
_ 293'K
. __ • _'_'-'-'-'-'-:-L-;::o=o=t- ~._.~-- _.-.-J"_.......-.-.- j \ .
• / ._~.-. I I
l(r / K·~
!
/ I (em"']
/ I 8
I I
~'K
/ / I
I I I I
!
, 413 'K I / 293'K Ill) 'K 7
,. : 3S2-K
103 '
,
l
: .+
! ~
,i
,.
;
/ j ! CdTe T,
6 ~
t!
! '/
IJ
+ 5
+ 04Jr measunmenls I'lfJ
l(f polarimetric 1
8 I m~Qsurfments!1
6 .
I ./}+
., : l'
IIL
l I I { sample 4
4 thickn.ss
I ' /
j'! tr=--
lI ;I I ,. QOJ95mm J I
2 11159 mm tranSmittance J J'
1,17 mm measu ...m.nts.~ , 3
101 fofarplls 17 i
measur.me"Y !
.... ! 2
• I
/ x" ! i
./1.(-:/1
I
/
• .. 111
/
/ !
I 160 hv[;VJ--:~
1
/ il-
~.1S ~ h~['11
Figure Dll·2 a(E) spectra for CdTe measured at several temperatures in the absorption edge
~
region. Marple's results [21] are also shown for comparison, (From Koi\.ak et al. [22],) CM
The £(E) spectra in the interband transition region of CdTe have been determined
using SE at room temperature by a number of groups [11, 37-42] (see Figs. DI4-3,
D22-4, and D24-4 below). Kim et al. [40] reported the SE £(E) spectra measured at
temperatures between 296 and 800 K. The samples used in these studies were bulk
CdTe crystals [11,37-9,42] and epitaxial CdTe films grown on Si [40] and CdTe sub-
strates [41]. These SE data exhibit values of ~-IO-12 at the E2 peak and at T-300 K
[11,37-40]. Aspnes and Arwin [38] found that the "bare" surface of CdTe can be ob-
tained by rinsing with Br in methanol, followed by a rinse with fresh saturated BaBH.t
in methanol, and finally with Br in methanol solution. They reported the maximum ~
value of -12.1. It must be noted that the maximum ~ value of -16.2 obtained by
Freeouf [10] from reflectivity measurement is extremely larger than this SE value
(-12.1). Strain effects in MBE-grown (111)CdTe epitaxial layers on (lOO)GaAs sub-
strates have also been investigated using SE [43].
The vacuum-UV (36-150-eV) optical absorption properties of some II-VI com-
pounds, including CdTe, have been studied by Cardona and Haensel [44]. The CdTe
film used was obtained by vacuum evaporation on a noncrystalline substrate, and thus
it was polycrystalline. A broad structure peaking at -90 eV was observed in the ab-
sorption spectrum of this sample. KisIel et al. [45] also reported the reflectivity spectra
of CdTe, ZnTe, and HgTe in the region of d-core transitions. The sharp structures abo-
ve approximately 10 eV were interpreted as transitions originating in the group-II metal
uppermost d levels.
We list in Table DII-2 the room-temperature values of £=£,+i~, n*=n+ik, a, and R
for CdTe. A set of the optical constants for ESO.4 eV were calculated from the rest-
strahlen parameters of Vodop'yanov et al. [20]. The real optical constants, £, and n, for
0.5SESl.2 eV were taken from Marple [29]. A set of the optical constants were taken
for 1.254SES1.455 eV from Adachi et al. [11], for 1.5SES6.0 eV from Aspnes and
Arwin [38], and for 6.2SES20 eV from Cardona [34]. The imaginary constants, k and a,
for ~40 eV were from Cardona and Haensel [44].
The (£" £0, (n, k), a, and R values in Table Dl1-2 are plotted in Figs. Dl1-3-D11-6,
2D E, exciton peak (Ex). It has been shown [11] that such optical-constant spectra can
be successfully explained by the MDF.
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L. Schirone, l. Opt. Soc. Am. B 7, 918 (1990).
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34. M. Cardona,]. Appl. Phys. 36, 2181 (1965).
35. D. J. Chadi, J. P. Walter, M. L. Cohen, Y. Petroff, and M. Balkanski, Phys. Rev. B
5,3058 (1972).
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39. P. Lautenschlager, S. Logothetidis, L. Vifia, and M. Cardona, Phys. Rev. B 32,
3811 (1985).
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4786 (1997).
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42. S. G. Choi, Y. D. Kim, S. D. Yoo, D. E. Aspnes, I. Miotkowski, and A. K. Ram-
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43. M. S. Han, T. W. Kang, J. H. Leem, B. K. Song, Y. B. Hou, W. H. Baek, M. H.
Lee, J. H. Bahng, K. J. Kim, J. M. Kim, H. K. Kim, and T. W. Kim, f. Electron.
Mater. 26, 507 (1997).
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Nuovo Cimento D 8,436 (1986).
10
CAl 5
o
CdTe
2 3 4 5 6 7
Photon energy (eV)
Figure Dll-3 tl(E) and t2(E) spectra for CdTe at 300 K.
E1+t. 1(Ex)
4
! E\! E2
3
.::t:.
\
r:: E1(Ex)!
I
I \
\
2 \
I \. k
~ I '- /
h.l --
Eo+t.o I n
1 Eo !I
I
!.,.
/
/
/ CdTe
_/
0 1 2 3 4 5 6 7
Photon energy (eV)
Figure Dl1-4 n(E) and k(E) spectra for CdTe at 300 K.
108
107
106
105 ! CAITO
IE 104
<.>
-103
~
102
10 1
CdTe
10°
10-1~~=L~~~~~~~~
10-2 10-1 10° 10 1 102
Photon energy (eV)
Figure Dl1-5 aJ..E) spectrum for CdTe at 300 K.
0.6
!E2
EO!
0.5
E,(EX)l
rex)
E,+ll.,
a: 0.4
Eo+ll.o
Eo
!
0.3 !
CdTe
0.20
1 2 3 4 5 6 7
Photon energy (eV)
Figure Dll-6 R(E) speetrum for CdTe at 300 K.
Table Dll·2 Optical constants a/Care at 300 K.

eV £1 £2 n k ex (em· l ) R
0.004 10.68 0.029 3.268 0.00446 1.81E+OO 0.282
0.008 11.35 0.084 3.370 0.01246 1.0 1E+O 1 0.294
0.012 13.38 0.284 3.658 0.03880 4.72E+01 0.326
0.014 16.29 0.727 4.037 0.09003 1.28E+02 0.364
0.Q15 19.53 1.452 4.422 0.16416 2.50E+02 0.399
0.016 26.96 4.123 5.207 0.39591 6.42E+02 0.462
0.0162 29.71 5.509 5.474 0.50319 8.26E+02 0.481
0.0164 33.30 7.699 5.808 0.66274 1.10E+03 0.503
0.0166 38.07 11.42 6.238 0.91538 1.54E+03 0.531
0.0168 44.35 18.33 6.795 1.34909 2.30E+03 0.566
0.017 51.31 32.46 7.484 2.16893 3.74E+03 0.610
0.0171 53.07 44.62 7.823 2.85178 4.94E+03 0.636
0.0172 50.03 61.21 8.034 3.80965 6.64E+03 0.666
0.0173 36.90 79.50 7.891 5.03732 8.84E+03 0.698
0.0174 11.64 89.79 7.148 6.28086 l.l1E+04 0.730
0.01745 -2.705 88.61 6.555 6.75856 1.20E+04 0.745
0.0175 -15.49 83.25 5.882 7.07673 1.26E+04 0.759
0.0176 -31.77 65.77 4.543 7.23899 1.29E+04 0.781
0.0177 -36.75 48.28 3.459 6.97949 1.25E+04 0.798
0.0178 -35.77 35.04 2.674 6.55134 1.18E+04 0.810
0.0179 -32.62 25.85 2.122 6.09241 l.l1E+04 0.819
0.Q18 -29.01 19.55 1.728 5.65692 1.03E+04 0.825
0.0182 -22.55 12.04 1.228 4.90513 9.05E+03 0.831
0.0184 -17.61 8.051 0.936 4.29929 8.02E+03 0.832
0.0186 -13.89 5.724 0.753 3.80264 7.17E+03 0.828
Table D11-2 Continued (CdTe).

eV £1 ~ n k IX (em· l ) R
0.0188 -11.06 4.264 0.630 3.38451 6.45E+03 0.821
0.019 -8.842 3.293 0.545 3.02310 5.82E+03 0.811
0.02 -2.572 1.265 0.384 1.64902 3.34E+03 0.669
0.021 0.315 0.660 0.724 0.45615 9.71E+02 0.090
0.022 1.960 0.403 1.407 0.14313 3.19E+02 0.032
0.023 3.017 0.270 1.739 0.07777 1.8IE+02 0.074
0.024 3.752 0.194 1.938 0.04993 1.2IE+02 0.102
0.025 4.290 0.145 2.072 0.03498 8.87E+01 0.122
0.03 5.675 0.051 2.382 0.01063 3.23E+01 0.167
0.04 6.552 0.014 2.560 0.00279 1.13E+01 0.192
0.05 6.858 0.0062 2.619 0.00119 6.03E+OO 0.200
0.06 7.006 0.0033 2.647 0.00063 3.82E+OO 0.204
0.Q7 7.089 0.0020 2.662 0.00037 2.66E+OO 0.206
0.08 7.141 0.0013 2.672 0.00024 1.96E+OO 0.207
0.09 7.176 0.00089 2.679 0.00017 1.52E+00 0.208
0.1 7.200 0.00064 2.683 0.00012 1.21E+00 0.209
0.2 7.276 2.697 0.211
0.3 7.289 2.700 0.211
0.4 7.294 2.701 0.211
0.5 7.307 2.703 0.212
0.55 7.329 2.707 0.212
0.6 7.354 2.712 0.213
0.65 7.381 2.717 0.213
0.7 7.412 2.723 0.214
0.75 7.447 2.729 0.215
0.8 7.485 2.736 0.216
0.85 7.528 2.744 0.217
0.9 7.576 2.752 0.218
0.95 7.629 2.762 0.219
1 7.688 2.773 0.221
1.05 7.755 2.785 0.222
1.1 7.830 2.798 0.224
1.15 7.914 2.813 0.226
1.2 8.009 2.830 0.228
1.254 8.133 2.852 0.231
1.304 8.258 2.874 0.234
1.354 8.398 2.898 0.237
1.405 8.595 2.932 0.241
1.455 8.931 0.0015 2.989 0.00024 3.60E+Ol 0.249
1.5 9.213 0.606 3.037 0.100 1.52E+04 0.255
1.518 9.202 0.896 3.037 0.148 2.27E+04 0.256
1.536 9.183 0.758 3.033 0.125 1.94E+04 0.255
1.554 9.104 0.910 3.021 0.151 2.37E+04 0.254
1.572 9.047 0.951 3.012 0.158 2.51E+04 0.253
1.59 8.997 0.991 3.004 0.165 2.66E+04 0.252
1.608 8.951 1.056 2.997 0.176 2.87E+04 0.251
1.627 8.922 1.033 2.992 0.173 2.85E+04 0.250
1.645 8.917 1.028 2.991 0.172 2.87E+04 0.250
1.663 8.910 1.045 2.990 0.175 2.95E+04 0.250
1.681 8.902 1.064 2.989 0.178 3.03E+04 0.250
Table Dll-2 Continued (Care).

eV £1 £2 n k a (em-I) R
1.699 8.901 1.081 2.989 0.181 3.11E+04 0.250
1.717 8.899 1.115 2.989 0.187 3.25E+04 0.250
1.735 8.904 1.141 2.990 0.191 3.36E+04 0.250
1.753 8.901 1.186 2.990 0.198 3.53E+04 0.251
1.771 8.913 1.180 2.992 0.197 3.54E+04 0.251
1.789 8.923 1.213 2.994 0.203 3.67E+04 0.251
1.807 8.927 1.249 2.995 0.209 3.82E+04 0.251
1.825 8.938 1.264 2.997 0.211 3.90E+04 0.252
1.843 8.954 1.283 3.000 0.214 3.99E+04 0.252
1.861 8.966 1.287 3.002 0.214 4.05E+04 0.252
1.88 8.983 1.305 3.005 0.217 4.14E+04 0.253
1.898 9.006 1.316 3.009 0.219 4.21E+04 0.253
1.916 9.031 1.315 3.013 0.218 4.24E+04 0.254
1.934 9.048 1.328 3.016 0.220 4.32E+04 0.254
1.952 9.064 1.358 3.019 0.225 4.45E+04 0.255
1.97 9.085 1.399 3.023 0.231 4.62E+04 0.255
1.988 9.108 1.415 3.027 0.234 4.7IE+04 0.256
2.006 9.129 1.457 3.031 0.240 4.89E+04 0.257
2.024 9.151 1.487 3.035 0.245 5.03E+04 0.257
2.042 9.179 1.518 3.040 0.250 5. 17E+04 0.258
2.06 9.203 1.527 3.044 0.251 5.24E+04 0.258
2.078 9.224 1.570 3.048 0.258 5.43E+04 0.259
2.096 9.259 1.588 3.054 0.260 5.52E+04 0.260
2.114 9.289 1.596 3.059 0.261 5.59E+04 0.260
2.133 9.318 1.625 3.064 0.265 5.73E+04 0.261
2.151 9.353 1.647 3.070 0.268 5.85E+04 0.262
2.169 9.388 1.666 3.076 0.271 5.95E+04 0.263
2.187 9.430 1.686 3.083 0.273 6.06E+04 0.264
2.205 9.463 1.738 3.089 0.281 6.29E+04 0.264
2.223 9.498 1.767 3.095 0.285 6.43E+04 0.265
2.241 9.537 1.810 3.102 0.292 6.63E+04 0.266
2.259 9.571 1.846 3.108 0.297 6.80E+04 0.267
2.277 9.618 1.885 3.116 0.302 6.98E+04 0.268
2.295 9.658 1.924 3.123 0.308 7. 17E+04 0.269
2.313 9.705 1.963 3.131 0.313 7.35E+04 0.270
2.331 9.752 2.002 3.139 0.319 7.54E+04 0.271
2.349 9.805 2.042 3.148 0.324 7.73E+04 0.273
2.367 9.857 2.093 3.157 0.332 7.96E+04 0.274
2.386 9.902 2.146 3.165 0.339 8.20E+04 0.275
2.404 9.954 2.206 3.174 0.348 8.47E+04 0.276
2.422 9.997 2.274 3.182 0.357 8.78E+04 0.278
2.44 10.04 2.348 3.190 0.368 9. 11E+04 0.279
2.458 10.08 2.423 3.197 0.379 9.44E+04 0.280
2.476 10.11 2.499 3.204 0.390 9.79E+04 0.281
2.494 10.15 2.555 3.211 0.398 1.0IE+05 0.282
2.512 10.18 2.625 3.217 0.408 1.04E+05 0.283
2.53 10.21 2.687 3.223 0.417 1.07E+05 0.284
2.548 10.25 2.744 3.230 0.425 1.lOE+05 0.285
2.566 10.29 2.808- 3.237 0.434 1.13E+05 0.286
2.584 10.32 2.867 3.243 0.442 1.16E+05 0.287
011 CADMIUM TELLURIDE (CdTe) 541
Table D11·2 Continued (CdTe).

eV £1 £2 n k a (em· l ) R
2.602 10.37 2.931 3.2S2 0.4S1 1.19E+OS 0.289
2.62 10.41 3.003 3.2S9 0.461 1.22E+OS 0.290
2.639 10.47 3.074 3.269 0.470 1.26E+OS 0.291
2.6S7 1O.S0 3.14S 3.276 0.480 1.29E+OS 0.292
2.67S 1O.S6 3.217 3.286 0.490 1.33E+OS 0.294
2.693 10.61 3.293 3.296 O.SOO 1.36E+OS 0.295
2.711 10.66 3.364 3.305 0.509 1.40E+05 0.297
2.729 10.72 3.442 3.315 0.519 1.44E+OS 0.298
2.747 10.78 3.530 3.326 0.S31 1.48E+05 0.300
2.76S 10.83 3.622 3.336 0.543 1.52E+OS 0.301
2.783 10.89 3.717 3.347 0.555 1.S7E+05 0.303
2.801 10.95 3.821 3.358 0.569 1.62E+05 0.305
2.819 11.01 3.924 3.369 0.582 1.66E+OS 0.306
2.837 11.08 4.027 3.381 0.596 1.71E+OS 0.308
2.855 11.14 4.143 3.393 0.611 1.77E+OS 0.310
2.873 11.20 4.2S8 3.405 0.625 1.82E+OS 0.312
2.892 11.27 4.388 3.418 0.642 1.88E+OS 0.314
2.91 11.33 4.520 3.430 0.659 1.94E+OS 0.316
2.928 11.40 4.6S8 3.444 0.676 2.01E+OS 0.318
2.946 11.47 4.809 3.4S7 0.696 2.08E+05 0.320
2.964 11.53 4.961 3.470 0.715 2.1SE+OS 0.323
2.982 11.60 5.130 3.484 0.736 2.23E+OS 0.325
3 11.66 5.309 3.498 0.759 2.3IE+OS 0.328
3.018 11.73 5.494 3.513 0.782 2.39E+05 0.330
3.036 11.79 S.700 3.528 0.808 2.49E+OS 0.333
3.054 11.86 5.913 3.S43 0.83S 2.58E+OS 0.336
3.072 11.91 6.148 3.SS8 0.864 2.69E+OS 0.339
3.09 11.96 6.403 3.572 0.896 2.81E+OS 0.342
3.108 12.00 6.670 3.587 0.930 2.93E+OS 0.345
3.127 12.03 6.956 3.600 0.966 3.06E+OS 0.348
3.145 12.04 7.277 3.613 1.007 3.2IE+05 0.352
3.163 12.04 7.620 3.625 1.051 3.37E+OS 0.3S5
3.181 11.99 8.002 3.634 1.101 3.55E+OS 0.359
3.199 11.93 8.403 3.641 1.154 3.74E+05 0.363
3.217 11.80 8.838 3.643 1.213 3.96E+05 0.367
3.235 11.61 9.294 3.639 1.277 4.19E+05 0.371
3.253 11.35 9.757 3.627 1.345 4.44E+05 0.375
3.271 10.99 10.21 3.605 1.416 4.70E+OS 0.379
3.289 10.52 10.63 3.569 1.489 4.97E+OS 0.382
3.307 9.919 10.97 3.515 1.561 5.23E+OS 0.384
3.325 9.200 11.18 3.441 1.625 5.48E+OS 0.385
3.343 8.440 11.18 3.350 1.668 5.65E+05 0.383
3.361 7.737 10.94 3.2S1 1.683 S.73E+OS 0.378
3.38 7.194 10.53 3.158 1.667 5.71E+OS 0.371
3.398 6.873 10.03 3.08S 1.626 S.60E+05 0.362
3.416 6.761 9.S76 3.040 1.575 5.45E+OS 0.3S3
3.434 6.780 9.226 3.019 1.528 5.32E+OS 0.347
3.452 6.861 8.973 3.013 1.489 5.21E+OS 0.342
3.47 6.956 8.825 3.016 1.463 5.15E+05 0.340
3.488 7.0S1 8.736 3.023 1.445 5. 11E+OS 0.338
Table DU-2 Continued (CdTe).

eV £, Ez n k a (cm-') R
3.506 7.137 8.696 3.032 1.434 5.lOE+05 0.338
3.524 7.197 8.694 3.040 1.430 5. 11 E+05 0.338
3.542 7.239 8.714 3.047 1.430 5. 14E+05 0.338
3.56 7.271 8.759 3.054 1.434 5.18E+05 0.339
3.578 7.293 8.807 3.060 1.439 5.22E+05 0.340
3.596 7.304 8.879 3.066 1.448 5.28E+05 0.342
3.614 7.296 8.958 3.070 1.459 5.35E+05 0.343
3.633 7.283 9.050 3.074 1.472 5.42E+05 0.345
3.651 7.260 9.145 3.077 1.486 5.50E+05 0.346
3.669 7.227 9.258 3.080 1.503 5.59E+05 0.348
3.687 7.179 9.372 3.081 1.521 5.69E+05 0.350
3.705 7.121 9.505 3.082 1.542 5.79E+05 0.353
3.723 7.034 9.647 3.080 1.566 5.91E+05 0.355
3.741 6.937 9.791 3.077 1.591 6.03E+05 0.357
3.759 6.813 9.938 3.071 1.618 6.17E+05 0.360
3.777 6.666 10.096 3.063 1.648 6.31E+05 0.363
3.795 6.496 10.249 3.052 1.679 6.46E+05 0.365
3.813 6.390 10.453 3.053 1.712 6.62E+05 0.369
3.831 6.045 10.522 3.015 1.745 6.78E+05 0.371
3.849 5.767 10.625 2.988 1.778 6.94E+05 0.373
3.869 5.465 10.695 2.956 1.809 7.lOE+05 0.375
3.886 5.131 10.723 2.917 1.838 7.24E+05 0.377
3.904 4.795 10.688 2.873 1.860 7.36E+05 0.377
3.922 4.448 10.583 2.822 1.875 7.46E+05 0.377
3.94 4.124 10.413 2.768 1.881 7.5IE+05 0.376
3.958 3.852 10.187 2.715 1.876 7.53E+05 0.373
3.976 3.646 9.908 2.665 1.859 7.49E+05 0.369
3.994 3.522 9.625 2.624 1.834 7.43E+05 0.364
4.012 3.462 9.366 2.593 1.806 7.35E+05 0.359
4.03 3.456 9.132 2.571 1.776 7.26E+05 0.353
4.048 3.483 8.939 2.557 1.748 7. 17E+05 0.349
4.066 3.520 8.786 2.548 1.724 7.1IE+05 0.345
4.084 3.567 8.661 2.543 1.703 7.05E+05 0.342
4.102 3.612 8.560 2.540 1.685 7.01E+05 0.339
4.12 3.653 8.477 2.538 1.670 6.98E+05 0.337
4.139 3.687 8.413 2.537 1.658 6.%E+05 0.335
4.157 3.724 8.357 2.537 1.647 6.94E+05 0.333
4.175 3.758 8.314 2.538 1.638 6.93E+05 0.332
4.193 3.785 8.274 2.538 1.630 6.93E+05 0.331
4.211 3.812 8.242 2.539 1.623 6.93E+05 0.330
4.229 3.832 8.211 2.539 1.617 6.93E+05 0.329
4.247 3.858 8.192 2.541 1.612 6.94E+05 0.329
4.265 3.884 8.173 2.543 1.607 6.95E+05 0.328
4.283 3.913 8.162 2.546 1.603 6.96E+05 0.328
4.301 3.932 8.154 2.548 1.600 6.98E+05 0.327
4.319 3.954 8.153 2.551 1.598 7.00E+05 0.327
4.337 3.981 8.156 2.555 1.596 7.02E+05 0.327
4.355 3.996 8.165 2.558 1.596 7.05E+05 0.327
4.373 4.020 8.173 2.562 1.595 7.07E+05 0.327
4.392 4.037 8.191 2.566 1.596 7. 11E+05 0.328
Table Dll·2 Continued (CdTe).

eV £1 ~ n k a. (em-I) R
4.41 4.063 8.207 2.571 1.596 7.14E+05 0.328
4.428 4.079 8.238 2.576 1.599 7.18E+05 0.328
4.446 4.100 8.273 2.582 1.602 7.22E+05 0.329
4.464 4.111 8.301 2.586 1.605 7.26E+05 0.330
4.482 4.133 8.336 2.592 1.608 7.31E+05 0.331
4.5 4.148 8.381 2.598 1.613 7.36E+05 0.332
4.518 4.160 8.432 2.604 1.619 7.42E+05 0.333
4.536 4.177 8.486 2.611 1.625 7.47E+05 0.334
4.554 4.185 8.542 2.617 1.632 7.53E+05 0.335
4.572 4.196 8.607 2.624 1.640 7.60E+05 0.337
4.59 4.198 8.674 2.630 1.649 7.67E+05 0.338
4.608 4.207 8.753 2.638 1.659 7.75E+05 0.340
4.627 4.207 8.834 2.645 1.670 7.83E+05 0.342
4.645 4.209 8.925 2.653 1.682 7.92E+05 0.344
4.663 4.194 9.019 2.659 1.696 8.02E+05 0.346
4.681 4.194 9.125 2.668 1.710 8. 12E+05 0.348
4.699 4.180 9.229 2.675 1.725 8.22E+05 0.351
4.717 4.153 9.341 2.681 1.742 8.33E+05 0.353
4.735 4.126 9.476 2.689 1.762 8.46E+05 0.356
4.753 4.100 9.598 2.696 1.780 8.58E+05 0.359
4.771 4.054 9.738 2.702 1.802 8.72E+05 0.362
4.789 4.008 9.888 2.709 1.825 8.86E+05 0.366
4.807 3.942 10.03 2.713 1.849 9.01E+05 0.369
4.825 3.872 10.19 2.718 1.875 9. 17E+05 0.373
4.843 3.784 10.37 2.722 1.904 9.35E+05 0.377
4.861 3.667 10.54 2.723 1.936 9.54E+05 0.381
4.88 3.560 10.71 2.725 1.966 9.73E+05 0.386
4.898 3.412 10.91 2.724 2.002 9.94E+05 0.390
4.916 3.250 11.09 2.721 2.038 1.02E+06 0.395
4.934 3.056 11.27 2.714 2.076 1.04E+06 0.400
4.952 2.834 11.44 2.704 2.116 1.06E+06 0.406
4.97 2.581 11.63 2.692 2.160 1.09E+06 0.411
4.988 2.311 11.78 2.675 2.201 1.11E+06 0.417
5.006 2.022 11.91 2.655 2.242 1.14E+06 0.422
5.024 1.680 12.01 2.627 2.285 1.16E+06 0.428
5.042 1.344 12.08 2.598 2.325 1.19E+06 0.434
5.06 0.985 12.10 2.562 2.362 1.21E+06 0.439
5.078 0.631 12.12 2.527 2.399 1.24E+06 0.444
5.096 0.280 12.09 2.487 2.430 1.26E+06 0.449
5.114 ·0.059 12.02 2.446 2.458 1.27E+06 0.454
5.133 -0.405 11.92 2.400 2.483 1.29E+06 0.458
5.151 -0.734 11.81 2.356 2.507 1.31E+06 0.463
5.169 -1.040 11.67 2.310 2.525 1.32E+06 0.467
5.187 -1.336 11.51 2.264 2.542 l.34E+06 0.471
5.205 -1.618 11.33 2.217 2.556 1.35E+06 0.475
5.223 -1.890 11.14 2.169 2.568 1.36E+06 0.479
5.241 -2.143 10.94 2.122 2.578 1.37E+06 0.482
5.259 -2.387 10.69 2.070 2.583 1.38E+06 0.486
5.277 -2.604 10.46 2.022 2.587 1.38E+06 0.489
5.295 -2.800 10.21 1.973 2.587 1.39E+06 0.492
Table Dll-2 Continued (CdTe).

eV £1 ~ n k ex. (em-I) R
5.313 -2.992 9.932 1.921 2.585 1.39E+06 0.495
5.331 -3.139 9.634 1.870 2.576 1.39E+06 0.497
5.349 -3.273 9.349 1.821 2.567 1.39E+06 0.499
5.367 -3.373 9.044 1.772 2.552 1.39E+06 0.501
5.386 -3.442 8.769 1.729 2.536 1.38E+06 0.502
5.404 -3.476 8.491 1.688 2.515 1.38E+06 0.502
5.422 -3.511 8.210 1.646 2.494 1.37E+06 0.502
5.44 -3.515 7.944 1.608 2.470 1.36E+06 0.501
5.458 -3.517 7.693 1.572 2.447 1.35E+06 0.501
5.476 -3.453 7.461 1.544 2.416 1.34E+06 0.498
5.494 -3.418 7.229 1.513 2.389 1.33E+06 0.497
5.512 -3.373 7.048 1.490 2.365 1.32E+06 0.495
5.53 -3.314 6.840 1.464 2.336 1.3IE+06 0.492
5.548 ~3.220 6.690 1.450 2.307 1.30E+06 0.488
5.566 -3.168 6.517 1.428 2.282 1.29E+06 0.486
5.584 -3.081 6.374 1.414 2.254 1.28E+06 0.481
5.602 -3.018 6.266 1.403 2.233 1.27E+06 0.478
5.62 -2.%0 6.131 1.387 2.210 1.26E+06 0.476
5.639 -2.880 6.025 1.378 2.186 1.25E+06 0.472
5.657 -2.840 5.914 1.364 2.168 1.24E+06 0.470
5.675 -2.762 5.817 1.356 2.145 1.23E+06 0.466
5.693 -2.741 5.738 1.345 2.133 1.23E+06 0.465
5.711 -2.706 5.651 1.334 2.118 1.23E+06 0.463
5.729 -2.611 5.550 1.327 2.091 1.21E+06 0.458
5.747 -2.524 5.447 1.319 2.065 1.20E+06 0.453
5.765 -2.503 5.381 1.310 2.054 1.20E+06 0.452
5.783 -2.456 5.283 1.298 2.035 1.19E+06 0.449
5.801 -2.367 5.208 1.295 2.011 1.18E+06 0.444
5.819 -2.356 5.111 1.279 1.998 1.18E+06 0.443
5.837 -2.275 5.053 1.278 1.977 1.17E+06 0.438
5.855 -2.198 4.975 1.273 1.954 1.16E+06 0.433
5.873 -2.183 4.921 1.265 1.945 1.16E+06 0.432
5.892 -2.086 4.858 1.265 1.920 1.15E+06 0.426
5.91 -2.020 4.841 1.270 1.906 1.14E+06 0.422
5.928 -1.935 4.779 1.269 1.883 1.13E+06 0.416
5.946 -1.922 4.613 1.240 1.860 1.12E+06 0.415
5.964 -1.731 4.605 1.263 1.824 1.10E+06 0.402
5.982 -1.830 4.585 1.246 1.839 1.12E+06 0.409
6 -1.934 4.361 1.191 1.831 1. 11E+06 0.416
6.2 -1.12 5.03 1.42 1.77 1. 11E+06 0.368
6.4 -1.04 5.08 1.44 1.76 1.l4E+06 0.365
6.6 -1.25 4.90 1.38 1.78 1.19E+06 0.374
6.8 -1.42 4.59 1.30 1.76 1.22E+06 0.381
7 -1.38 4.34 1.26 1.72 1.22E+06 0.376
7.2 -1.55 4.15 1.20 1.73 1.26E+06 0.387
7.4 -1.86 3.76 1.08 1.74 1.31E+06 0.413
7.6 -1.99 3.19 0.94 1.70 1.3IE+06 0.434
7.8 -1.76 2.56 0.82 1.56 1.23E+06 0.429
8 -1.31 2.26 0.81 1.40 1.14E+06 0.382
9 -0.40 1.82 0.86 1.07 9.73E+05 0.253
Table D11-2 Continued (CdTe).

eV £1 £2 n k a (cm· 1) R
10 -0.09 1.62 0.88 0.92 9.37E+OS 0.199
11 0.20 1.39 0.89 0.78 8.6SE+OS 0.146
12 0.44 1.37 0.97 0.71 8.S9E+OS 0.114
13 0.38 1.49 0.98 0.76 1.00E+06 0.129
14 0.24 1.37 0.90 0.76 1.08E+06 0.140
IS 0.21 1.21 0.8S 0.71 1.09E+06 0.136
16 0.23 1.06 0.81 0.6S l.06E+06 0.126
17 0.24 0.93 0.77 0.60 1.03E+06 0.118
18 0.2S 0.83 0.7S O.SS l.01E+06 0.110
19 0.29 0.73 0.73 O.SO 9.SSE+OS 0.098
20 0.32 0.63 0.72 0.44 8.92E+OS 0.086
40 0.069 2.81E+OS
SO 0.060 3.04E+OS
60 0.OS8 3.S2E+OS
6S 0.061 4.00E+OS
67 0.060 4.07E+OS
70 0.063 4.44E+OS
7S 0.068 S.19E+OS
80 0.068 S.49E+OS
8S 0.064 S.49E+OS
90 0.062 S.66E+OS
91 0.062 S.71E+OS
92 0.061 S.70E+OS
9S 0.OS8 S.S7E+OS
100 0.OS3 S.37E+OS
102 O.OSl S.24E+OS
lOS 0.046 4.84E+OS
110 0.038 4.22E+OS
120 0.024 2.92E+OS
130 O.OlS 2.01E+OS
140 0.011 l.50E+OS
ISO 0.0088 1.33E+OS
D12 MERCURY SELENIDE
(HgSe)

Mercury selenide (HgSe) is a IIb-VIb semiconductor crystallizing in the zinc-blende
structure. It forms solid solutions with many other IIb-VIb compounds. For example,
alloying with ZnSe or CdSe results in a material with an energy gap that depends on Zn
or Cd contents (see Sec. D21). This material may also be alloyed with MnSe or FeSe to
form diluted magnetic semiconductors (see Sec. D23). HgSe films have also been suc-
cessfully grown by MBE [1-3].

Figure D 12-1 shows the electronic energy-band structure of HgSe as calculated with an
EPM by Bloom and Bergstresser [4]. Table D12-1 lists the CP energies in HgSe de-
r
k-
Figure D12-1 Electronic energy-band structure of HgSe as calculated with an EPM. (From
Bloom and Bergstresser [4].) The locations of several interband transitions are included by the
vertical arrows.
546
012 MERCURY SELENIDE (HgSe) 547
TABLE D12·1 Energies o/the CPs in the optical spectrao/HgSe at 300 K.

CPs eV
Eo --0.2 (+0.43°)
EI 2.85
EI+h.1 3.17
E2 5.75
EI' 7.35
A 8.25
B 9.35
C -11
°K._U. Gawlik etal., Phys. Rev. Lett. 78, 3165 (1997).
termined experimentally [5-7].

The band structure of HgSe is considered to be of the inverted type. The lowest-
conduction-band minimum and the top of the valence band in HgSe are degenerate at
the center of the BZ. The rs level is the fourfold component of the SO-split valence
band (rs+r7). The r6 level, which for most cubic semiconductor is the conduction band
minimum with an energy larger than the rs state, is found to locate below the rs state
(Le., "negative" energy gap, "inverted" band structure). However, it has been shown
recently from combined angle-resolved photoemission and inverse photoemission
spectroscopy an evidence for a positive fundamental gap of Eo-+0.42 eV (~-O.30 eV)
for HgSe [8]. Following this conclusion, previous experiments favoring zero gap mod-
els of Hg-based compounds may need to be reinterpreted.
The main structure EI in HgSe at -2.9 eV has been assigned to the L4.s~L6 transi-
tions [4,9]. The second main structure E2 at -5.8 eV is attributed to transitions at the X
point (~ or X7~X7) [4]. The E I ', A, B, and C structures are also attributed to transi-
tions at the L point in the BZ [4,9].

Reflectivity spectra in the far-IR region of HgSe have been measured by Manabe et al.
[10] and Witowski and Grynberg [11]. The HgSe crystals used in these studies were
grown by the Bridgman method. The measured spectra were explained by the theoreti-
cal dielectric-function model including the contributions of the rs~rs interband tran-
sitions, free carriers, and phonons. Witowski and Grynberg [11] suggested that their
measured data significantly differ from that of Manabe et al. They, however, did not
give any conclusive answer what can be the cause of the difference between these two
data.
Einfeldt et al. [12] studied optical properties above the Eo edge of HgSe by measur-
ing transmittance and reflectance using a Fourier transform spectrometer. The samples
were grown by MBE on (lOO)CdTe, ZnTe, and GaAs substrates. The layer thickness
varied from 0.2 to 4 11m and the free electron concentration at 4.2 K, as determined
from van der Pauw method, was in the range of (0.1-4)xlO IB cm·3 • The high-frequency
dielectric constant E_ of HgSe obtained from this study was 7.5±1. This value is com-
patible, within the error, with the literature value of 7.3±o.3 [11], but is considerably
smaller than 11±1 according to Ref. [10]. Kireev and Volkov [13] also reported the
experimental optical absorption spectrum for HgSe measured in the 0.1-0.6-eV region
at 300 K.
The fundamental reflectivity spectra in the interband transition region of HgSe have
been measured by a number of authors [7,12,14-16]. By performing the KK analysis,
the (n, k) or (EI'~) values were extracted in the 2-3.5-eV region (T=300 K) [15] and in
the 2-12-eV region (T=300 K) [16]. The CPs found in such spectra were correlated
with various electronic transitions in the BZ [7,14,16]. Kumazaki et al. [17] have also
reported the SE (EI, ~) values for Hgl_xCdxSe (x=0, 0.03, and 0.1) measured in the re-
gion between 1.7 and 5.6 eV at 300 K. The Hgl_xCdxSe single crystals used were grown
by the Bridgman method. The measured ~(E) spectrum for x=O (HgSe) showed a
broad peak at the EI CP (-2.9 eV) with a peak value of -9.5. This value is compatible
with that of Ref. [15] (-9.0), but is much larger than -5.0 in Ref. [16].
We show in Table D12-2 the room-temperature values of E=EI+i~, n*=n+ik, a, and
R for HgSe. These data were taken for E~1.0 eV from Einfeldt et al. [12] and for
1.7~~5.4 eV from Kumazaki et al. [17].
The (EI'~' (n, k), a, and R values in Table 012-2 are plotted in Figs. D12-2-012-4.
The vertical arrows in the figures indicate the positions of the EI and EI+.11 CPs.
REFERENCES
1. Y. Lansari, 1. W. Cook, Jr., and J. F. Schetzina, J. Electron. Mater. 22, 809

(1993).
2. C. R. Becker, L. He, S. Einfeldt, Y. S. Wu, G. Urondel, H. Heinke, S. Oehling, R.
N. Bicknell-Tassius, and G. Landwehr, J. Cryst. Growth 127,331 (1993).
3. S. Einfeldt, H. Heinke, M. Behringer, C. R. Becker, E. Kurtz, D. Hommel, and G.
Landwehr,]. Cryst. Growth 138,471 (1994).
4. S. Bloom and T. K. Bergstresser, Phys. Status Solidi 42,191 (1970).
by O. Madelung, Landolt-Bomstein, New Series, Group III, Vol. 22, Pt. a
6. A. Moritani, C. Hamaguchi, and J. Nakai, J. Phys. Soc. Jpn 32,1151 (1972).
7. A. Sarem, B. J. Kowalski, and B. A. Orlowski, J. Phys.: Condens. Matter 2,8173
(1990).
8. K.-U. Gawlik, L. Kipp, M. Skibowski, N. Orlowski, and R. Manzke, Phys. Rev.
Lett. 78,3165 (1997).
9. H. Overhof, Phys. Status Solidi B 43,221 (1971).
10. A. Manabe, H. Noguchi, and A. Mitsuishi, Phys. Status Solidi B 90,157 (1978).
11. A. M. Witowski and M. Grynberg, Phys. Status Solidi B 100, 389 (1980).
D12 MERCURY SELENIDE (HgSe) 549
12. S. Einfeldt, F. Goschenhofer, C. R. Becker, and G. Landwehr, Phys. Rev. B 51,

4915 (1995).
13. P. S. Kireevand V. V. Volkov, Sov. Phys. Semicond. 7,949 (1974).
14. W. J. Scouler and G. B. Wright, Phys. Rev. 133, A736 (1964).
15. A. Moritani, H. Sekiya, K. Taniguchi, C. Hamaguchi, and J. Nakai, lpn. l. Appl.
Phys. 10, 1410 (1971).
16. E. Guziewicz, B. J. Kowalski, K. Szamota-Sadowska, W. Szuszkiewicz, andB.
A. Orlowski, Phys. Rev. B 55,4405 (1997).
17. K. Kumazaki, L. ViDa, C. Umbach, and M. Cardona, Phys. Status Solidi B 156,
371 (1989).
12
8
w
4
r
"2
0
HgSe
-40
1 2 3 4 5 6
Photon energy (eV)
Figure 012-2 £1(E) and £2(E) spectra for HgSe at 300 K.
3 n
oX:
c: 2
1
k
HgSe
o 1 2 3 4 5 6
Photon energy (eV)
Figure D12-3 n(E) and k(E) spectra for HgSe at 300 K.
0.5
0.4
0.3a:
R
0.2
HgSe 0.1
Photon energy (eV)

Figure D12-4 a(E) and R(E) spectra for HgSe at 300 K.
D12 MERCURY SELENIDE (HgSe) sst
Table D12·2 Optical constants of HgSe at 300 K.
eV £1 £2 n k a (cm· 1) R
0.Q75 4.41 2.10 0.126
0.1 9.18 3.03 0.254
0.125 10.1 3.18 0.272
0.15 10.6 1.30 3.26 0.200 3.04E+03 0.283
0.175 10.8 1.50 3.29 0.228 4.05E+03 0.287
0.2 10.6 1.74 3.27 0.266 5.39E+03 0.285
0.3 10.2 2.28 3.22 0.355 1.08E+04 0.282
0.4 9.97 2.44 3.18 0.383 1.55E+04 0.278
0.5 9.70 2.48 3.14 0.396 2.01E+04 0.274
0.6 9.44 2.58 3.10 0.415 2.53E+04 0.270
0.7 9.24 2.66 3.07 0.433 3.07E+04 0.267
0.8 9.09 2.78 3.05 0.456 3.70E+04 0.266
0.9 8.83 2.87 3.01 0.476 4.34E+04 0.262
1 8.75 3.03 3.00 0.504 5. 11 E+04 0.262
1.7 8.63 5.58 3.07 0.907 1.56E+05 0.294
1.8 8.62 5.59 3.07 0.910 1.66E+05 0.294
1.9 8.60 5.62 3.07 0.914 1.76E+05 0.294
2 8.58 5.76 3.08 0.936 1.90E+05 0.296
2.1 8.57 5.96 3.08 0.967 2.06E+05 0.300
2.2 8.55 6.21 3.09 1.00 2.24E+05 0.303
2.3 8.47 6.56 3.10 1.06 2.47E+05 0.308
2.4 8.37 6.99 3.10 1.13 2.74E+05 0.314
2.5 8.22 7.46 3.11 1.20 3.04E+05 0.321
2.6 7.92 8.07 3.10 1.30 3.43E+05 0.330
2.7 7.28 8.81 3.06 1.44 3.94E+05 0.340
2.8 6.10 9.47 2.95 1.61 4.56E+05 0.351
2.9 4.81 9.50 2.78 1.71 5.02E+05 0.354
3 3.89 9.18 2.63 1.74 5.30E+05 0.351
3.1 3.13 8.67 2.49 1.75 5.48E+05 0.346
3.2 2.58 8.07 2.35 1.72 5.57E+05 0.337
3.3 2.27 7.50 2.25 1.67 5.58E+05 0.326
3.4 2.14 6.98 2.17 1.61 5.53E+05 0.313
3.5 2.10 6.54 2.12 1.54 5.48E+05 0.300
3.6 2.06 6.23 2.08 1.50 5.47E+05 0.291
3.7 2.03 6.01 2.05 1.47 5.5IE+05 0.284
3.8 2.02 5.85 2.03 1.44 5.56E+05 0.279
3.9 2.02 5.75 2.01 1.43 5.64E+05 0.276
4 2.01 5.64 2.00 1.41 5.72E+05 0.272
4.1 2.00 5.58 1.99 1.40 5.83E+05 0.270
4.2 1.99 5.54 1.99 1.40 5.94E+05 0.269
4.3 1.98 5.52 1.98 1.39 6.08E+05 0.268
4.4 1.96 5.52 1.98 1.40 6.23E+05 0.269
4.5 1.93 5.54 1.97 1.40 6.40E+05 0.270
4.6 1.88 5.60 1.97 1.42 6.62E+05 0.273
4.7 1.83 5.64 1.97 1.43 6.82E+05 0.275
4.8 1.75 5.73 1.97 1.46 7.09E+05 0.280
4.9 1.68 5.81 1.97 1.48 7.34E+05 0.284
5 1.57 5.92 1.96 1.51 7.65E+05 0.290
Table D12·2 Continued (HgSe).

eV £1 £2 n k a (cm'l) R
5.1 1.34 6.05 1.94 1.56 8.06E+05 0.299
5.2 1.10 6.15 1.92 1.61 8.46E+05 0.308
5.3 0.824 6.28 1.89 1.66 8.92E+05 0.319
5.4 0.692 6.42 1.89 1.70 9.29E+05 0.327
D13 MERCURY TELLURIDE
(HgTe)

Mercury telluride (HgTe) is a IIb-VIb semiconductor crystallizing in the zinc-blende
structure. HgTe forms alloys with many other IIb-V1b compounds. The CdxHg1_xTe al-
loy system is till the major material used for infrared detectors [1,2]. By varying the x
composition from zero (HgTe) to unity (CdTe) the energy gap varies from - -0.3 to
-1.6 eV. This promises that detectors with peak responses over a wide wavelength
range can be fabricated from this alloy system. Because of the unique band structure
(i.e., "negative" energy gap, "inverted" band structure), this material is also interesting
from many physical points of view (see, e.g., Ref. [3]).

There are many theoretical works dealing with the electronic energy-band structure of
HgTe (see, e.g., Refs. [4-6]). We schematically show in Fig. D13-1 the energy-band
structure of HgTe. Table D13-1 also lists the CP energies in HgTe determined experi-
mentally [7,8].
HgTe
L6
t
>-
Lr,
01
....
dI L ',5 X7
c: L6
W Xc
X7
La
L r X
Figure Dl3·1 Schematic electronic energy-band structure of HgTe. The locations of several
interband transitions are included by the vertical arrows.
553
TABLE D13-1 Energies of the CPs in the optical spectra ofHg'fe at 293 K.
CPs eV
Eo -0.146
Eo+~ 0.750
2.109
2.741
4.369
6.57
Hg-based compounds, such as HgTe and HgSe, are characterized by an inverted

band structure in the center of the BZ with respect to the majority of zinc-blende mate-
rials. In typical direct-band-gap semiconductors, such as GaAs and CdTe, the lowest
conduction band (rJ originates from an s-like atomic state, while the two highest va-
lence bands (rs), which are degenerate at the rpoint, are of p-like character. Due to
relativistic effects the r6 band in HgTe falls below the rs state. Hence, due to such a
zero-band-gap nature, HgTe is known to be a semimetal. However, it has been shown
recently from combined angle-resolved photoemission and inverse photoemission
spectroscopy an evidence for a positive fundamental gap of Eo (-+0.42 eV) for HgSe
[9]. Following this conclusion, previous experiments favoring zero gap models of
Hg-based compounds may need to be reinterpreted.
The higher iriterband transition energies E I, EI+A I, and Ez are, respectively, -2.1 eV
[A4,s (A3)~A6 (AI) or L4 •S (~)~L6 (LI)], -2.7 eV [A6 (A3)~A6 (AI) or L6 (~)~L6
(LI)], and -4.4 eV [X7 (XS)~X6 (XI)] at room temperature [7].

The 77-K values of the static and high-frequency dielectric constants of HgTe are re-
ported to be £.=21.0 and £_=lS.2 [10], respectively. Such constants may be slightly
dependent on temperature, i.e., they will have larger values at higher temperature [11].
The reflectivity spectra in the reststrahlen region of HgTe have been measured by
several authors [10,12-14]. The spectra at room temperature showed a broad plasmon-
phonon minimum at -300 cm·1 [12-14], together with a weak structure at -100 cm- I
[13,14]. Although several interpretations have been proposed [13], the nature of this
weak structure is unclear at present. At lower temperatures the phonon-mode spectra
were observed separately [10,12].
Absorption properties in the 0.OS-Q.62S-eV region of HgTe have been reported by
Szuszkiewicz [IS]. The r6~rS transitions were observed at low temperatures, and the
related absorption spectrum was calculated based upon Kane's band theory [16].
The fundamental reflectivity spectra in the interband transition region of HgTe have
been measured by several groups [17-21]. The CPs observed in these studies were cor-
related with various electronic transitions in the BZ [17,18,20]. By performing the KK
analysis, the (n, k) and (£1' ~ values were extracted in the 1.7-3.5-eV region (T=300
K) [19].
013 MERCURY TELLURIDE (HgTe) 555
The optical constants in the interband transition region of HgTe have been deter-
mined using SE in the 0.75-5.7-eV region at 293 K by Castaing et al. [7] (see Fig.
D20-2 below), in the 1.5-6.0-eV region at 300 K by Arwin and Aspens [22], and in the
1.8-5.5-eV region at 300 K by Viiia et al. [23] (see Fig. D22-4 below). The bulk. single
crystals used in these studies were grown by a traveling-heater method [7,23] or by
zone-melt refining [22]. The measured f-z(E) spectra showed peaks at the EI (-2.1 eV),
E1+dl (-2.7 eV), and E2 CPs (-4.4 eV). The f-z values at the E2 peak are, respectively,
-9.6 [7,22] and -8.7 [23].
KisIel et al. [8] reported the reflectivity spectra of some II-VI compounds, including
HgTe, in the region of d-core transitions. The sharp structures above approximately 10
e V were interpreted as transitions originating in the metal uppermost d levels.
Table D13-2 lists the room-temperature values'of £=£I+if-z, n*=n+ik, a, and R for
HgSe taken from Arwin and Aspnes [22].
The (£1' £0, (n, k), a, and R values in Table D13-2 are plotted in Figs. D13-2-D13-4.
The vertical arrows in the figures indicate the positions of the E 1, E1+d1, and E2 CPs.
REFERENCES
1. C. T. Elliott, in Properties of Narrow Gap Cadmium-Based Compounds, EMIS
Datareviews Series No. 10, edited by P. Capper (INSPEC (lEE), London, 1994), p.
311.
2. I. M. Baker, in Properties of Narrow Gap Cadmium-Based Compounds, EMIS
323.
3. T. C. Harman, in l/-VI Semiconducting Compounds, edited by D. G. Thomas
(Benjamin, New York, 1967), p. 982.
4. M. T. Czyzyk and M. Podg6rny, Phys. Status Solidi B 98, 507 (1980).
5. N. A. Cade and P. M. Lee, Solid State Commun. 56,637 (1985).
6. R. Markowski and M.Podg6rny, l. Phys. C: Condens. Matter 4, 2505 (1992).
7. O. Castaing, J. T. Benhlal, R. Granger, and R. Triboulet, l. Phys. I (France) 6,
907 (1996).
8. A. KisIel, M. Zimnal-Starnawska, F. Antonangeli, M. Piacentini, and N. Zema,
Nuovo Cimento D 8, 436 (1986).
9. K.-U. Gawlik. L. Kipp. M. Skibowski, N. Orlowski, and R. Manzke, Phys. Rev.
Lett. 78,3165 (1997).
10. J. Baars and F. Sorger, Solid State Commun. 10, 875 (1972).
12. M. Grynberg, R. Le Toullec, and M. Baikanski, Phys. Rev. B 9,517 (1974).
13. M. P. Volz, F. R. Szofran, S. L. Lehoczky, and C.-H. Su, Solid State Commun. 75,
943 (1990).
14. C.-C. Wu, D.-Y. Chu, C.-Y. Sun, and T.-R. Yang, lpn. l. Appl. Phys. 34,4687
(1995).
15. W. Szuszkiewicz, Phys. Status Solidi B 79, 691 (1977).

16. E. O. Kane, l. Phys. Chern. Solids 1, 249 (1957).
18. W. J. Scouler and G. B. Wright, Phys. Rev. 133, A736 (1964).
19. A. Moritani, H. Sekiya, K. Taniguchi, C. Hamaguchi, and J. Nakai, lpn. l. Appl.
Phys.10, 1410 (1971).
20. D. J. Chadi, J. P. Walter, M. L. Cohen, Y. Petroff, and M. Balkanski, Phys. Rev. B
5,3058 (1972).
21. M. Rosch, R. Atzmtiller, G. Schaack, and C. R. Becker, Phys. Rev. B 49, 13460
(1994).
22. H. Arwin and D. E. Aspnes,J. Vac. Sci. Technol. A 2, 1316 (1984).
23. L. Vifia, C. Umback, M. Cardona, and L. Vodopyanov, Phys. Rev. B 29, 6752
(1984).
18r--.--~--~--~--~~
16
14
·.
E 1
12 ,.. ".
10 · .I
,
... ' ,
..·
..
8
6
4
2
o HgTe
-2
o
-4~--~--~--~--~--~--~
1 2 3 4 5 6
Photon energy (eV)
Figure D13-2 E[(E) and ez(E) spectra for HgTe at 300 K.
D13 MERCURY TELLURIDE (HgTe) 557
5
E'l
4
n
E2
..::.::
3 !
c:
2
1
k HgTe
0 1 2 3 4 5 6
Photon energy (eV)
Figure D13-3 n(E) and k(E) spectra for HgTe at 300 K.
0.50
E2 !
E,+.6.,
106 0.45
E,
!.. a;
! ,,
,,',
..-..
'. . 0.40 ,,
.. a:
r-
"
,,
-
I
E
0
i!!
.. ,,,. .. 0.35
R
,,
.. , '
105 0.30
HgTe
0 1 2 3 4 5 60 .25
Photon energy (eV)
Figure D13·4 a(E) and R(E) spectra for HgTe at 300 K.
Table D13-2 Optical constants of HgTe at 300 K.

eV £1 £2 n k ex (em-I) R
1.5 13.25 4.757 3.696 0.6435 9.79E+04 0.342
1.6 13.56 5.257 3.748 0.7013 1.14E+05 0.349
1.7 13.79 6.008 3.797 0.7911 1.36E+05 0.357
1.8 14.01 7.010 3.852 0.9099 1.66E+05 0.368
1.9 14.08 8.178 3.896 1.0494 2.02E+05 0.378
2 13.90 10.01 3.939 1.2710 2.58E+05 0.394
2.1 12.41 12.27 3.864 1.5874 3.38E+05 0.410
2.2 9.189 11.55 3.460 1.6688 3.72E+05 0.390
2.3 8.473 11.02 3.344 1.6469 3.84E+05 0.380
2.4 8.115 10.73 3.284 1.6339 3.98E+05 0.375
2.5 7.757 10.90 3.251 1.6764 4.25E+05 0.377
2.6 7.184 11.27 3.205 1.7575 4.63E+05 0.383
2.7 6.181 11.60 3.108 1.8658 5. 11E+05 0.389
2.8 4.654 11.43 2.915 1.9608 5.57E+05 0.392
2.9 3.938 10.51 2.754 1.9092 5.61E+05 0.379
3 3.652 9.789 2.655 1.8434 5.61E+05 0.366
3.1 3.556 9.288 2.598 1.7874 5.62E+05 0.356
3.2 3.437 8.954 2.552 1.7542 5.69E+05 0.350
3.3 3.389 8.679 2.521 1.7216 5.76E+05 0.344
3.4 3.341 8.470 2.495 1.6976 5.85E+05 0.339
3.5 3.317 8.328 2.478 1.6804 5.96E+05 0.336
3.6 3.294 8.195 2.462 1.6641 6.07E+05 0.333
3.7 3.282 8.186 2.460 1.6640 6.24E+05 0.332
3.8 3.222 8.186 2.451 1.6697 6.43E+05 0.333
3.9 3.150 8.278 2.450 1.6892 6.68E+05 0.336
4 3.117 8.428 2.460 1.7131 6.95E+05 0.340
4.1 3.007 8.712 2.472 1.7620 7.32E+05 0.348
4.2 2.768 8.996 2.468 1.8226 7.76E+05 0.357
4.3 2.267 9.263 2.429 1.9064 8.31E+05 0.369
4.4 1.790 9.513 2.395 1.9862 8.86E+05 0.381
4.5 1.002 9.580 2.306 2.0772 9.48E+05 0.395
4.6 0.167 9.413 2.189 2.1503 1.ooE+06 0.408
4.7 -0.573 9.013 2.056 2.1913 1.04E+06 0.418
4.8 -1.169 8.445 1.918 2.2017 1.07E+06 0.426
4.9 -1.587 7.844 1.791 2.1898 1.09E+06 0.431
5 -1.766 7.243 1.687 2.1473 1.09E+06 0.430
5.1 -1.838 6.676 1.595 2.0931 1.08E+06 0.426
5.2 -1.814 6.175 1.520 2.0310 1.07E+06 0.420
5.3 -1.671 5.758 1.471 1.9578 1.05E+06 0.408
5.4 -1.647 5.449 1.422 1.9156 1.05E+06 0.403
5.5 -1.456 5.174 1.400 1.8481 1.03E+06 0.390
5.6 -1.384 4.990 1.377 1.8115 1.03E+06 0.383
5.7 -1.217 4.850 1.375 1.7632 1.02E+06 0.371
5.8 -1.074 4.790 1.385 1.7296 1.02E+06 0.362
5.9 -0.955 4.765 1.397 1.7050 1.02E+06 0.354
6 -0.764 4.740 1.421 1.6680 1.0 1E+06 0.342
D14 MAGNESIUM CADMIUM TELLURIDE
(Mg,rCd 1_xTe)

The band-gap energy of the II-VI ternary alloy Mg.Cd l_zTe can be tuned from -1_5 eV
(x=O) up to over 3.0 eV (x=1.0) [1,2]. In the whole alloy range the lattice constant
changes by only 1.0%. This alloy system is one of a few II-VI semiconductors obtain-
able in both n- and p-type conductivities in bulk form. The growth of Mg.Cdl_zTe films
by MBE has been demonstrated for the first time [3].

Figure D14-1 shows the lowest-direct-band-gap energy Eo as a function of alloy com-
position x for MgzCd l_zTe [2]. The Eo 'values are found to be written as
Eo(x) =15+ 1.7x +0.3x2 (D14.1)
a 2K
• 300K
- - quadratic
..... linear fit
Figure D14·1 Composition depen-

dence of the lowest-direct-band-gap
2 energy (Eo) for Mg.Cdl_.Te at 2 and
300 K. (From Hanmann et al. [2].)
o 0.5 1.0
Composition x
559
in eV at 300 K, with a similar law, lying 0.1 eV higher in energy, at 2 K [2]. In this
study, the Eo gap was detected in the reflectance spectra as an excitonic feature for low
Mg contents and as the onset of Fabry-Perot oscillations within the MgTe/CdTe layer
for high Mg contents.
Optical properties in the far-IR region of MgxCd1.xTe are studied by several authors
[4-6]. Measurement techniques used in these studies were fundamental reflectivity [4]
and optical absorption [5,6]. The reststrahlen parameters obtained at 300 K for MgxCd l .
xTe (x=0.1, 0.35, and 0.5) were given in tabular form in Ref. [4]. The local modes of
Mg-P pairs and Mg2+ in CdTe were discussed in Refs. [5] and [6], respectively.
The n(E) data in the transparent region of MgxCd1-xTe alloy have been measured by
Lugauer et at. [7] at 77 and 300 K, by Luttmann et at. [8] at 300 K, and by Andre and
Dang [9] at T=4 K. The data were obtained from optical reflection [7], SE [8], and in-
terference fringe measurements [9]. The alloys with compositions of x=O.12- 0.69,
0-0.79, and 0-0.70 were studied in Refs. [7]-[9], respectively. They were grown by
MBE on (lOO)CdTe [7], on (l00)Zno.04 Cdo.96Te [7,8], and on (lOO)Zno.osCdo.9sTe sub-
strates [9]. We reproduce in Fig. D14-2 the n(E) date obtained by Lugauer et at. [7].
The Sellmeier-type or similar dispersion relation was applied to describe the index be-
havior as a function of wavelength for optional x compositions [7-9] and different
temperatures [7].
Optical properties in the interband transition region of MgxCd1.xTe have been studied
using SE at 300 K in the 0.7-5.6-eV region by Luttmann et at. [7] and in the 1.5-6.0-
Wavelength (nm)
1000 800 700 600 500
3.0
2.9
c
)( 28
..
QJ
"tJ
.....c 27
-
QJ
.....> ..............
v 26
<IS
.!:
QJ
2.5 .' .'
~ .... " "
"
24 I.··· ....
.. , ...........
'--_'1"1"1"""
I •••
23L-------------------------------~
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Energy (eV)
Figure D14·2 n(E) curves for Mg.Cd1 .•Te (x=0.12, 0.33, 0.40, 0.55, and 0.69) at 77 and 300 K.
(From Lugauer et al. [7].)
D14 MAGNESIUM CADMIUM TELLURIDE (Mg.Cdl .•Te) 561
Eo+60 (a) 12 (b)

10 Eo
/' .. :1-~"':;;;;'
.~;:;-;>~ 8
eX" 5
M9xCd 1_xTe
--x=O --x=O
o -------- x = 0.25 -------- x = 0.25
.............. x= 0040 .............. x = 0040
----x = 0.50
---x=0.50 o
-5 L---'--~..1-~-'---~--'--~-'
2.0 3.0 4.0 5.0 6.0 2.0 3.0 4.0 5.0 6.0
E (eV) E (eV)
Figure 014·3 (a) £I(E) and (b) Ez(E) spectra for Mg.Cdl .•Te (x=O, 0.25, 0.40, and 0.55) meas-
ured by SE at 300 K. (From Choi et at. [10].)
eV region by Choi et al. [10]. The crystals grown by the modified Bridgman method
(x=0-D.s0) were used in Ref. [10]. Figure D14-3 shows the e(E) spectra obtained by
Choi et al. [10]. As clearly seen in the figure, the SE spectra reveal distinct structures at
energies of the Eo, E 1, EI+~I' and E2 CPs.
REFERENCES
1. A. Kuhn, A. Chevy, and M.-J. Naud, 1. Cryst. Growth 9, 263 (1971).
2. J. M. Hartmann, J. Cibert, F. Kany, H. Mariette, M. Chrleux, P. Alleysson, R.
Langer, G. Feuillet, 1. Appl. Phys. 80, 6257 (1996).
3. A. Waag, H. Heinke, S. Scholl, C. R. Becker, and G. Landwehr, 1. Cryst. Growth
131, 607 (1993).
4. S. Nakashima, T. Fukumoto, A. Mitsuishi, and K. Itoh, 1. Phys. Soc. Ipn 35,1437
(1973).
5. B. V. Dutt and W. G. Spitzer,1. Appt. Phys. 48, 2107 (1977).
6. E. Oh and A. K. Ramdas, 1. Electron. Mater. 23, 30 (1994).
7. H.-J. Lugauer, F. Fischer, T. Litz, A. Waag, D. Hommel, and G. Landwehr, Semi-
condo Sci. Technol. 9, 1567 (1994).
8. M. Luttmann, F. Bertin, and A. Chabli, 1. Appl. Phys. 78, 3387 (1995).
9. R. Andre and Le Si Dang, 1. Appl. Phys. 82, 5086 (1997).
10. S. G. Choi, Y. D. Kim, S. D. Yoo, D. E. Aspnes, 1. Miotkowski, and A. K. Ram-

das, Appl. Phys. Lett. 71, 249 (1997).
D15 ZINC CADMIUM SELENIDE
(ZnxCd1_..8e)
D1S.1 GENERAL REMARKS

Much interest has recently been focused on ZnxCdt.xSe alloy because of its potential
applications in optoelectronic devices in the blue-green spectral region [1]. Bulk
ZnxCd1.xSe alloy crystallizes either in the cubic zinc-blende structure (x>0.7), in the
hexagonal wurtzite structure (x<0.5) , or in mixture of these two structures for
0.5$xg).7 [2]. It has, however, been reported that the heteroepitaxy of ZnxCd1.xSe on
GaAs(100) by MBE results in single-phase zinc-blende crystals over the entire compo-
sition range from ZnSe to CdSe [3]. High-quality ZnxCd1.xSe (x=O.53) epilayer can also
be grown on (100)InP substrate lattice-matched by MBE [4].
D1S.2 OPTICAL CONSTANTS

The composition dependence of the lowest-direct-band-gap energy Eo for ZnxCd1.xSe
alloy has been determined at 10 and 300 K by reflection spectroscopy [3], at 300 K by
SE [5], and at 5-300 K by optical transmission and reflection measurements [6]. Figure
Dl5-1shows the composition dependence of the Eo, Eo+~, E t , and El+LlI CP energies
for ZnxCd1..,Se as determined by Kim et al. [5] at 300 K. The Eo vs. x curve, in this case,
can be given by (in eV)
Eo(x) = 1.66 + 0.73x + 0.30X2 (DlS.l)
Similar quadratic relation holds for the Eo+~, Elo and El+LlI CP energies [5]. It should
be noted, however, that the 300-K value of Eo for c-CdSe varies from 1.66 to 1.74 eV
(see Ref. [5]).
The lattice vibronic properties of cubic (c-) ZnxCd1.xSe alloys grown on (100)GaAs
substrates by MBE have been studied using RS [7]. The changes in the LO and TO
phonon energies vs. alloy composition are found to be of an intermediate between the
one- and two-mode behaviors.
The waveguiding properties of MBE-grown ZnSe/ZnxCd1.xSe/ZnSe heterostructures
have been reported by Walecki et at. [8]. These authors reported the refractive-index
dispersion for Zno.S3CdO.17Se, expressed as the optical-confinement index Lln=nZncdSe-
nZnSe' in a graphical form. A temperature shift of the refractive index, Lln/LlT=1.0xlO""
Kl (T=50-300 K), has also been reported by analyzing laser emission wavelength from
a ZnxCd1.xSe-based distributed feedback laser as a function of temperature [9]. A prism
563
5.5
E,~
5.0
--
>Q)
4.5
4.0 E
1
>-
e> 3.5
Q) E +A
c: Zn Cd Sa 0 0
w x 1-x
3.0
2.5
2.0
1.5
0.0 0.2 0.4 0.6 0.8 1.0
Zn Concentration (x)
Figure DIS-I Composition dependence of the Eo, Eo+Ao, E 1, and El+£\1 CP energies for
ZnxCd1_xSe at 300 K. (From Kim et al. [5].)
coupling technique has also been used to determine the n(E) dispersion (E~2.282 e V)
for a series of c-Zn.Cd1_.Se epilayers (x=O-o.212) grown by MBE on (100)GaAs sub-
strates [10].
SE has been used to study optical properties of c-Zn.Cd1.•Se alloy by several groups
[5,11-13]. The samples used in these studies were epitaxial films grown by MBE on
(lOO)GaAs substrates with x=0-1.0 [5],0.75-1.0 [11],0.66-1.0 [12], and an MBE-
grown epitaxial Zno.53Cdo.47Se film lattice-matched to (lOO)InP [13]. Accurate values of
the Eo, Eo+flo, E 1, and El+Al CP energies as a function of x were determined by per-
forming an SCP analysis (see Fig. DIS-I).
Adachi proposed a model (MDF) for the optical dielectric function of semiconduc-
tors and successfully applied it to fit the c(E) data of some semiconductors (see, e.g.,
Ref. [14]). Suzuki and Adachi [15] used this model to obtain a closed analytic formula
for the optical dielectric function of ZnxCd1-xSe as a function of x.
Figure D15-2 shows the MDF-calculated c(E) spectra for Znx Cd1_x Se alloy with x-
composition increments of 0.2 [15]. The solid and open circles represent the experi-
mental data taken from Refs. [16] (ZnSe) and [5] (c-CdSe), respectively. The composi-
tion dependence of the CP strength and broadening parameters was determined by fit-
ting the binary data (ZnSe, c-CdSe) and ZnxCd1_XSe values (x=0.53, Ref. [13]) with a
quadratic expression.
Knowledge of the refractive indices of semiconductors in the region below or near
the fundamental absorption edge is often of interest in optoelectronic device design and
analysis. Figure DlS-3 shows the MDF-calculated spectral dependence of n(E) below
015 ZINC CADMIUM SELENIDE (Zn.Cdl .•Se) 565
. =0
01
2 3 4 5 6
Figure D15-2 (a) £I(E) and (b) E.z(E)

10 spectra for Zn.Cdl .•Se alloy with x-
composition increments of 0.2 as
obtained from the MDF calculation.
The solid and open circles show the
'"
III
experimental data taken from Refs.
5 [16] (ZnSe) and [5] (c-CdSe). re-
spectively. (From Suzuki and Ada-
chi [15].)
01
2 3 4 5
Photon energy (eV)
3.2
ZnxCd1_xSe
3.0 300K 0
Figure D15-3 Calculated n(E) dis-

persion below the Er/(Eo+tlo) re-
gion of Zn.Cdl .•Se alloy. The solid
and open circles show the experi-
mental data taken from Refs. [16]
(ZnSe) and [13] (Zno.s3CdoA7Se).
(From Suzuki and Adachi [15].)
o 1 2 3
Photon energy (eV)
the EoI(Eo+llo'J region of ZnxCd1.xSe alloy with x-composition increments of 0.2 [15].
The solid and open circles represent the experimental data taken from Refs. [16] (ZnSe)
and [13] (Zno,s3Cdo,47Se), respectively.
REFERENCES
1. A. Ishibashi, in Blue Laser and Light Emitting Diodes, edited by A. Yoshikawa, K.
Kishino, M. Kobayashi, and T. Yasuda (Ohmsha, Tokyo, 1996), p. 113.
2. A. S. Nasibov, Yu. V. Korostelin, P. V. Shapin, L. G. Suslina, D. L. Fedorov, and
L. S. Markov, Solid State Commun. 71, 867 (1989).
3. N. Samarth, H. Luo, J. K. Furdyna, R. G. Alonso, Y. R. Lee, A. K. Ramdas, S. B.
Qadri, and N. Otsuka, Appl. Phys. Lett. 56,1163 (1990).
4. E. Snoeks, S. Herko, L. Zhao, B. Yang, A. Cavus, L. Zeng, and M. C. Tamargo,
Appl. Phys. Lett. 70, 2259 (1997).
5. Y. D. Kim, M. V. Klein, S. F. Ren, Y. C. Chang, H. Luo, N. Samarthj, and J. K.
Furdyna, Phys. Rev. B 49, 7262 (1994).
6. U. Lunz, J. Kuhn, F. Goschenhofer, U. SchUssler, S. Einfeldt, C. R. Becker, and G.
Landwehr, J. Appl. Phys. 80, 6861 (1996).
7. R. G. Alonso, E.-K. Suh, A. K. Ramdas, N. Samarth, H. Luo, and 1. K. Furdyna,
Phys. Rev. B 40, 3720 (1989).
8. W. J. Walecki, A. V. Nurmikko, N. Samarth, H. Luo, and J. K. Furdyna, J. Opt.
Soc. Am. B 8, 1799 (1991).
9. M. llling, G. Bacher, A. Forchel, D. Hommel, B. Jobst, and G. Landwehr, Appl.
Phys. Lett. 67, 1 (1995).
10. F. C. Peiris, S. Lee, U. Bindley, and J. K. Furdyna, J. Appl. Phys. 84, 5194 (1998).
11. J. C. Jans, J. Petruzzello, J. M. Gaines, and D. 1. Olego, Proc. SPIE 1985, 260
(1993).
12. J. Lee, R. W. Collins, and A. R. Heyd, Appl. Phys. Lett. 69,2273 (1996).
13. T. Holden, P. Ram, F. H. Pollak, and J. L. Freeouf, Phys. Rev. B 56,4037 (1997).
15. K. Suzuki and S. Adachi, J. Appl. Phys. 83, 1018 (1998).
D16 ZINC CADMIUM TELLURIDE
(Zn.rCd 1_xTe)

The ZnxCd1_xTe alloy system is used for optoelectronic devices in the near-IR-green
spectral region and for nuclear radiation detectors (see, e_g_, Refs. [1,2]). The wide
variability of the lattice constant ranging from 6A82 to 6.103 A as x going from 0 to
1.0 also makes it an excellent candidate for use in a variety of II-VI heterostructures,
e_g., as a lattice-matched substrate for the epitaxial growth of Zn)Igl_xTe and Cd)Igl_
xTe ternaries [3].

ZnxCdl_xTe is a direct-band-gap semiconductor (0$x:S;1.0). The composition depen-
dence of the lowest-direct-band-gap energy Eo for ZnxCdl_xTe has been reported by
many authors (for recent reports, see Refs. [4-6]). We show in Fig. D16-1 the Eo vs. x
plots for ZnxCdl_xTe reported by Tobin et al. [5] (solid line) and Sanchez-Almazan [6]
(solid circles). These data were determined by PRo The results obtained by Tobin et al.
[5] can be written as
Eo(x) = 15045 +O.631x + 0.128x2 (D16.1)
:> 2.0
~
o
LU
Figure D16-1 Eo vS. x for Zn.Cd1_.Te alloy

1.5 reported by Tobin et al. [5] (solid line) and
T=300 K Sanchez-Almazan [6] (solid circles).
o 0.5 1.0
x
567
in eV at 300 K (Fig. D16-l).

The static dielectric constants c, as a function of temperature for CdTe and
Zno.1Cdo.9Te were measured between 20 and 180°C at 100 MHz [7]. The c, values at
20°C were 11.0 (CdTe) and 10.9 (Zn o.1Cdo.9Te), respectively.
By analyzing the refractive-index data, the high-frequency dielectric constant as a
function of x for ZnxCd1.xTe alloy has been determined to be given by [8]
c_(x) = 7.21 + 0.05x (DI6.2)
Far-IR reflectivity study on ZnxCd1.xTe alloy has been performed by a number of

authors [9-12]. All confrrmed the two-mode behavior in this alloy system with nearly
identical plots for the composition dependence of ZnTe- and CdTe-like TO and LO
phonon frequencies.
The neE) dispersion in ZnxCd1.xTe ternary has been measured at room temperature in
the 1.1-2.5-eV range using SE [8]. The crystals used were grown by the conventional
Bridgman method. We show in Fig. D16-2 these results. As seen in the figure, the SE
data show clear peaks originating from transitions at the Eo edge. These data were suc-
cessfully modeled by the first-order Sellmeier equation [8].
The optical absorption spectra in the near and mid-IR regions of ZnxCd1.xTe have
been measured by several authors at room temperature [13-15] and at low temperature
(2 K, Ref. [15]). It has been found that the absorption coefficient exhibits an exponen-
tial dependence on photon energy according to Urbach rule and that the exponential
parameters depend on composition x of this alloy [14].
3.3
3.2
3.1
3.0
c
2.9
Figure D16-2 Refractive index for
2.8 ZnxCd1_xTe with =0 (CdTe), 0.3,
0.5, 0.8, and 1.0 (ZnTe) measured
300 K by SE at 300 K. (From Adachi and
2.7 Kimura [8].)
1.0 1.5 2.0 2.5

Photon Energy (eV)
016 ZINC CADMIUM TELLURIDE (Zn.Cdl .•Te) 569
The room-temperature reflectivity spectra in the interband transition region of

ZnxCdl.xTe have been measured by several authors [16-18]. The measured spectra re-
vealed CPs at various energies, Eo, E1, E1+t. I , etc. They were correlated with transitions
at specific points or directions in the BZ [16,18].
Optical properties in the interband transition region of ZnxCdl .•Te have been studied
using SE at 300 K in the 1.1-S.6-eV region by Adachi and Kimura [19] and in the
0.7S-S.7-eV region by Castaing et al. [20]. The crystals were grown by the Bridgman
method [19] or by a traveling-heater method with Te as the solvent [20]. We show in
Fig. D16-3 the n(E) and k(E) spectra for ZnxCdl.xTe (0s.x:S:1.0) measured by Adachi and
Kimura [19]. Distinct structures at energies of the Eo, E1, E1+t. I , and E2 CPs can be
clearly seen in these spectra. It has been shown [19] that such optical-constant data can
be successfully modeled by the MDF. This enables us to obtain the optical response in
ZnxCdl.xTe alloy of arbitrary composition (x) and photon energy (E=nw).
4.5 3.5
Zn xCd 1_xTe
4.0 3.0
300 K
300 K
2.5
3.5
2.0
c 3.0 ~
1.5
2.5
1.0
----- x=0.8 -.--- x=0.8
2.0 0.5 0.5 0.5
0.3 0.3
1.5 1 01
2 3 4 5 6 2 3 4 56
Figure D16·3 n(E) and k(E) spectra for Zn.Cdl .•Te (x=O, 0.3, 0.5, 0.8, and 1.0) measured by SE
at 300 K. (From Adachi and Kimura [19].)
REFERENCES
1. B. M. Basol, V. K. Kapur, and M. L. Ferris, 1. Appl. Phys. 66, 1816 (1989).

2. Z. Burshtein, H. N. Jayatirtha, A. Burger, J. F. Butler, B. Apotovsky, and F. P.
Doty, Appl. Phys. Lett. 63, 102 (1993).
3. M. G. Astles, in Properties of Narrow Gap Cadmium-Based Compounds, EMIS
Datareviews Series No. 10, edited by P. Capper (INSPEC (IEE), London, 1994), p.
13.
4. J. L. Reno and E. D. Jones, Phys. Rev. B 45,1440 (1992).

5. S. P. Tobin, J. P. Tower, P. W. Norton, D. Chandler-Horowitz, P. M. Aminharaj,
V. C. Lopes, W. M. Duncan, A. J. Syllaios, C. K. Ard, N. C. Giles, J. Lee, R.
Balasubramanian, A. B. Bollong, T. W. Steiner, M. L. W. Thewalt, D. K. Bowen,
and B. K. Tanner, 1. Electron. Mater. 24, 697 (1995).
6. F. G. Sanchez-Almazan, H. Navarro-Contreras, G. Ramirez-Flores, M. A. Vidal,
O. Zelaya-Angel, M. E. Rodriguez, and R. Baquero, l. Appl. Phys. 79, 7713
(1996).
7. R. Weil, R. Nkum, E. Muranevich, and L. Benguigui, Phys. Rev. Lett. 62,2744
(1989).
8. S. Adachi and T. Kimura, lpn. J. Appl. Phys. 32,3866 (1993).
9. H. Harada and S. Narita,J. Phys. Soc. lpn 30,1628 (1971).
10. L. K. Vodop'yanov, E. A. Vinogradov, A. M. Blinov, and V. A. Rukavishnikov,
Sov. Phys.-Solid State 14,219 (1972).
11. S. Perkowitz, L. S. Kim, and Z. C. Feng, Phys. Rev. B 42,1455 (1990).
12. D. N. Talwar, Z. C. Feng, and P. Becla, Phys. Rev. B 48,17064 (1993).
13. A. Ebina, K. Saito, and T. Takahashi, l. Appl. Phys. 44,3659 (1973).
14. A. J. Syllaios, P.-K. Liao, B. J. Greene, H. F. Schaake, H.-Y. Liu, and G. West-
phal, l. Electron. Mater. 26, 567 (1997).
15. D. Ohlmann, M. Mazilu, R. Levy, and B. Honerlage, l. Appl. Phys. 82, 1355
(1997).
16. K. Saito, A. Ebina, and T. Takahashi, Solid State Commun. 11,841 (1972).
17. S. G. Kroitoru, O. G. Maksimova, and V. V. Sobolev, Sov. Phys. Semicond. 9,
1191 (1976).
18. V. V. Sovolev, O. G. Maksimova, and S. G. Kroitoru, Phys. Status Solidi B 103,
499 (1981).
19. S. Adachi and T. Kimura, lpn. J. Appl. Phys. 32,3496 (1993).
20. O. Castaing, R. Granger, J. T. Benhlal, and R. Triboulet, l. Phys.: Condens. Mat-
ter 8,5757 (1996).
D17 ZINC SULPHO-SELENIDE
(ZnS))e1_J

The band-gap energy of the IIb-V1b ternary alloy ZnS..Se1_.. can be tuned from -2.7 eV
(x=O) up to over 3.6 eV (x=1.0) [1]. Much interest has, therefore, been focused on this
alloy system in optoelectronic devices in the blue-near-UV spectral region (see Ref.
[2]). Note that ZnS..Se1_.. layers with x=O.05-O.08 are nearly lattice-matched to GaAs
substrate. Thus, the alloy system is important for the realization of ZnSe-based
blue-green semiconductor lasers.

ZnS..Se1_.. is a direct-band-gap semiconductor (O~1.0). The composition dependence
of the lowest-direct-band-gap energy Eo for ZnS.. Se1_.. has been reported by several
authors [1,3-5]. We show in Fig. D17-1 the cathodoluminescence peak position vs.
alloy composition x for ZnS..Se1_.. reported by Araki et al. [1] at room temperature. Also
shown by the dotted line is the result of Ebina et al. [4] written as (in eV)
Eo(x) = 2.721 + 0.352x + 0.630X2 (DI7.1)
Far-IR reflectivity and absorption spectra of ZnSxSe 1.x alloy have been measured by
Brafman et al. [6]. The results suggest that the alloy system shows the two-mode be-
havior of the lattice vibronic properties [7].
Low-temperature (2 K) optical absorption spectra at the Eo edge of MOCVD-grown
ZnSxSe1.x layers have been reported by Gebhard and Schotz [8]. The Is-exciton peak
energy vs. x relation was determined in this study.
Jans et al. [9] carried out the SE study on MBE-grown ZnSxSe1jGaAs samples.
However, only the e(E) spectrum for ZnSO.lSSeO.8S(x=O.15) was reported in this study in
graphical form. Ozaki and Adachi [2] have, therefore, used the MDF to obtain a closed
analytic formula for the optical constants of ZnSxSe 1_x alloy as a function of x. Figure
D17-2 shows the MDF-ca1culated e1(E) and ~(E) spectra for ZnSxSe 1_Xalloy with x-
composition increments of 0.2 [2]. The solid and open circles represent the experi-
mental data taken from Refs. [10] (ZnSe) and [11] (ZnS), respectively.
The room-temperature reflectivity spectra in the interband transition region of
ZnSxSe1_x were measured by Ebina et al. [4]. Several peaks related to the EJ(Eo+flo) and
Ed(E1+/l 1) CPs were identified in these spectra. We note, however, that their obtained
R values ($;0.3) are considerably smaller than those reported in Ref. [2], suggesting
poorer quality of their sample surfaces.
Figure D17-3 shows the MDF-calculated spectral dependence of n(E) below the
EJ(Eo+flo) region of ZnSXSe 1_x alloy with x-composition increments of 0.1 [2]. Thesolid
and open circles represent the experimental data taken from Refs. [10] (ZnSe) and
10rr---,----.---.----.---.
12
(a)
ZnS xSe1_x
8 10
300K
8
..., ...,'" 6
(b)
4
4
2 ZnS xSe1_x
2
300K
o1 2 3 4 5 ~ 4 5
Figure D17-2 (a) £I(E) and (b) ~(E) spectra for ZnSxSel.x alloy with x-composition increments
of 0.2 as obtained from the MDF calculation. The solid and open circles show the experimental
data taken from Refs. [10] (ZnSe) and [11] (ZnS), respectively. (From Ozaki and Adachi [2].)
017 ZINC SULPHO-SELENIDE (ZnS.Sel_.) 573
2.8
2.6
c:
2.4
2.2~1---'--~2:-----'--~3:-----'----'4
Photon energy (eV)

Figure D17·3 Calculated n(E) dispersion below the ErI(Eo+~) region of ZnS.Sel-% alloy with x-
composition increments of 0.1. The solid and open circles show the experimental data taken
from Refs. [10] (ZnSe) and [11] (ZnS), respectively. (From Ozaki and Adachi [2].)
[11] (ZnS), respectively. The SO-splitting energy .10-0.07 eV of Zns is much smaller
than that of ZnSe (~-o.4 eV). It is, thus, difficult to find the ~-related structures in
optical spectra of larger x alloys.
Recently, Ktihnelt et al. [12] have reported optical waveguide properties consisting
of ZnS%Se I_% and Mg.,ZnI_%Se. They reported the n data at wavelengths 500, 600, and
700 nm, plotted as a function of alloy composition x for ZnS.,8el_%. The data suggested
that the refractive index of ZnS%Se1_% can be calculated in good approximation by linear
interpolation between the data of ZnSe [10] and ZnSe [11].
REFERENCES
1. H. Araki, H. Kanie, and M. Sano, Jpn. J_ Appl. Phys. 33,235 (1994).
2_ S. Ozaki and S_ Adachi, J_ Appl. Phys_ 75, 7470 (1994).
3. S. Larach, R. E. Shrader, and C. F. Stocker, Phys_ Rev_ 108,587 (1957).
4. A. Ebina, E. Fukunaga, and T. Takahashi, Phys_ Rev_ B 10,2495 (1974).
5. L. G. Suslina, D. L. Fedorov, S. G. Konnikov, F. F. Kodzhespirov, A. A. Andreev,
and E. G. Sharlai, Sov. Phys. Semicond_ 11, 1132 (1977).
6. O. Brafman, I. F. Chang, G. Lengyel, S. S. Mitra, and E. Camall, Jr., Phys. Rev.
Lett. 19, 1120 (1967).
7. 1. F. Chang and S. S. Mitra, Phys. Rev. 172,924 (1968).

8. W. Gebhard and G. Schotz, in Properties o/Wide Bandgap II-VI Semiconductors,
EMIS Datareviews Series No. 17, edited by R. Bhargava (INSPEC (lEE), London,
1997),p.113.
9. J. C. Jans, J. Petruzzello, J. M. Gaines, and D. J. otego, Proc. SP/E 1985, 260
(1993).
11. S. Ozaki and S. Adachi, lpn. 1. Appl. Phys. 32, 5008 (1993).
12. M. Ktihnelt, L. Reindl, E. Griebl, B. Hahn, S. Kaiser, M. Kastner, H. Preis, T.
Frey, T. Reisinger, H. P. Wagner, and W. Gebhardt, l. Cryst. Growth 184/185,
1165 (1998).
D18 ZINC SELENO·TELLURIDE
(ZnSexTe1_J

The ZnSe-ZnTe alloy system is an attractive material system for use in light-emitting
devices in the green-to-blue spectral region (for recent study, see Ref. [1]). The
ZnSe",Tel.", alloy system represents one of the very few wide-band-gap II-VI compound
systems which can be synthesized in both p- and n-type conductivity forms with low
resistivity [2,3]. The ZnSe",Tel.", alloy system has also attracted attention because of its
anomalous variation of the band-gap energy with composition. It has been found both
theoretically and experimentally that the alloy system has extremely strong band-gap
bowing (see Ref. [4]): the lowest direct gap Eo of the alloy system between x-O and
-0.7 lies below the gaps of the two constituents, ZnSe and ZnTe. It has also been re-
ported that high-quality ZnSe",Te l.", films (0~1.0) can be grown epitaxially on GaAs
and InP substrates by MBE [5].

ZnSe",Tel.", is a direct-band-gap semiconductor (0$x~1.0). Figure D1S-1 shows a plot of
the lowest-direct-band-gap energy Eo vs. x for ZnSexTel.xalloy measured by Freytag et
al. [6] at 2 K. Brasil et al. [7] also obtained an Eo vs. x relation at 300 K given by
Eo(x) = 2.250 - U41x + 1.621x2 (D1S.1)
This equation gives an Eominimum at aboutx=0.35.

SE is an excellent technique for investigating the optical response of semiconductors.
To our knowledge, however, no SE study has been carried out on ZnSe",Tel.x to date.
Ozaki and Adachi [4] have, therefore, used the MDF to obtain a closed analytic for-
mula for the optical constants of ZnSexTel.x alloy as a function of x. Figure D1S-2
shows the MDF-calculated £I(E) and ~(E) spectra for ZnSe",Tel.x alloy with x-
composition increments of 0.1 [4]. The open and solid circles represent the experi-
mental data taken from Refs. [S] (ZnTe) and [9] (ZnSe), respectively.
The fundamental reflectivity spectra in the interband transition region of ZnSe",Tel.x
at 300 K were reported by Ebina et al. [10]. Energies of some CPs, such as Eo, Eo+llo.
E I , EI+~I' and~, as a function of x were determined. We note, however, that their ob-
tained R values (~0.4) are considerably smaller than those reported in Ref. [4], indi-
cating poorer quality of their sample surfaces.
575
2.9
ZnSexTe 1-x T=2K
2.7 v Photoluminescence
>CD <> Photoreflection
.50 0 Absorption o
>-
!? 2.5
CD
c:
w
2.3
2.1 ZnTe ZnSe
0.0 0.2 0.4 0.6 0.8 1.0

composition x
Figure DI8-I Experimental Eo vs. x for ZnSexTel.x at 2 K. (From Freytag et at. [6].)
15
ZnSeXTe1_X
10
., N
(b)
5

Figure D18-2 (a) £1(E) and (b) £2(E) spectra for ZnSexTel.x alloy with x-composition incre-
ments of 0.1 at 300 K as obtained from the MDF calculation. The open and solid circles show
the experimental data taken from Refs. [8] (ZnTe) and [9] (ZnSe), respectively. (From Ozaki
and Adachi [4].)
Figure D18-3 shows the MDF-calculated n(E) below the Eo/(Eo+l1o) region of
ZnSe.Te1•• alloy with x-composition increments of 0.1 [4]. The importance of the re-
fractive index in the operation of an injection laser is its role in the confinement of the
emitted radiation to the intermediate vicinity of an active region. Smaller Eo-gap mate-
rial usually has a larger value of the refractive index. If the refractive index in the ac
Dl8 ZINC SELENO-TELLURIDE (ZnSe.Te 1•• ) 577
3.2
ZnSeXTe1_X
3.0
c: 2.8
2.6
2.4
o 0.5 1.0 1.5 2.0 2.5

PHOTON ENERGY (eV)
Figure D18-3 Calculated neE) dispersion below the Er!(Eo+80) region of ZnSe.Tel .• alloy with
x-composition increments of 0.1 at 300 K. (From Ozaki and Adachi [4].)
tive region of an injection laser is smaller than the index of the cladding layer on both
sides, the effect is like that of an antiwaveguide configuration which does not confine
radiation to the neighborhood of the active region. This effect cause optical loss in the
waveguide, leading to an increase of the threshold current. We can expect, based on
Fig. DI8-3, such an antiwaveguiding behavior in ZnSeXTe1.JZnTe waveguides (x<OA)
at photon energies close to the lowest direct gap (Eo). This anomaly in the refractive
index corresponds to the anomalous variation of the Eo-gap energy with x.
REFERENCES
1. D. B. Eason, W. C. Hughes, J. Ren, M. Riegner, Z. Yu, J. W. Cook, Jr., J. F.
Schetzina, G. Cantwell, and W. C. Harsch, Electron. Lett. 30, 1178 (1994).
2. M. Aven and W. Garwacki, Appl. Phys. Lett. 5, 160 (1964).
3. M. Aven, R. B. Hall, and J. S. Prener, l. Electrochem. Soc. 115,846 (1968).
4. S. Ozaki and S. Adachi, lpn. l. Appl. Phys. 32, 2620 (1993).
5. F. S. Turco-Sandroff, R. E. Nahory, M. J. S. P. Brazil, R. J. Martin, and H. L.
Gilchrist, Appl. Phys. Lett. 58, 1611 (1991).
6. B. Freytag, P. Pavone, U. Rossler, K. Wolf, S. Lankes, G. Schotz, A. Naumov, S.
Jilka, H. Stanzl, and W. Gebhardt, Solid State Commun. 94, 103 (1995).
7. M. J. S. P. Brasil, R. E. Nahory, F. S. Turco-Sandroff, H. L. Gilchrist, and R. J.
Martin, Appl. Phys. Lett. 58,2509 (1991).
8. K. Sato and S. Adachi, l. Appl. Phys. 73,926 (1993).
9. s. Adachi and T. Taguchi, Phys. Rev. B 43, 9569 (1991).

10. A. Ebina, M. Yamamoto, and T. Takahashi, Phys. Rev. B 6,3786 (1972).
019 CADMIUM SULPHO-SELENIDE
(CdS.,pe1_J

Bulk CdSxSe 1_x alloy crystallizes in the hexagonal structure in the whole composition
range (0::;X:S;1.0). The lowest-band-gap energy of CdSxSe 1_x can be tuned from -1.7 eV
(CdSe) to -2.5 eV (CdS). Although the optical properties of CdSe and CdS have been
well established, little is known about their alloy.

CdSxSe 1_x is a direct-band-gap semiconductor. Figure D19-1 shows the composition
dependence of the reflectance maxima at the Eo edge of CdSxSe 1_xalloy at 300 K meas-
ured by Lisitsa et al. [1]. Note that peak A is observed only for El.c while B and C are
found for both El.c and E II c.
Far-IR optical properties of CdSxSe 1_x alloy have been studied by several authors
[2-5]. These studies conclude that the alloy system is of the two-mode type in the lat-
E,eV
2.G
2.4
2.2
2.0
1.8
1.6
20 40 GO 80
CdS CdSe, mol. 0/0
Figure 019·1 Reflectance maxima at the Eo edge of CdSxSel_xalloy at 300 K. Note that peak A
is observed only for E.lc while B and C are found for both E.lc and E II c. (From Lisitsa et al.
[1].)
579
tice vibronic properties.

The refractive-index dispersion in the transparent region of CdSxSe l _xhas been meas-
ured by Lisitsa et al. [6] in the temperature range between 100 and 600 K. They pre-
sented the results in a variety of graphical and tabular forms. Figure 019-2 shows, as
an example, the n(E) data for 0~1.0 measured at room temperature [6]. It is evident
from the figure that n.(E II c»no(E1-c) for all crystals investigated. Femtosecond time-
resolved refractive-index changes in CdSo.7sSeo.25 and CdS have also been measured
recently by Fox et al. [7].
The UV reflectivity spectra of CdSxSel single crystals have been obtained at 90 K
-%
with linearly polarized light by Hengehold and Fraime [8]. We reproduce their results
in Fig. 019-3 [8]. Energies of some CPs, such as EI , Eo', E2 , and EI', as a function of x
were determined. The CPs were also correlated with various electronic transitions in
the BZ.
II
t 1.6
c::
2.5
1.J
11
1.1
2.0 CdSxSe1-x
I.gL-~~'~~A~~~--~~~--L-~~
I:VVV 6IJ«J 11J()(}O 141J(J() 181J()(}
v(cm- I ) -
Figure D19-2 Refractive-index dispersion for CdS.Sel... alloy with x=O (curves 6), 0.36 (5),
0.58 (4), 0.79 (3), 0.92 (2), and 1.0 (1). The solid and open symbols correspond to those for
E.Lc (nO> and E II c (n.), respectively. (From Lisitsa et at. [6].)
D19 CADMIUM SULPHO-SELENIDE (CdS.Sel.•) 581
(b)
EJ.C 90 K EIIC 90 K
2500 2000
WAVELENGTH (lJ
Figure D19-3 UV reflectivity spectra for CdS.Se l.• alloy at 90 K for (a) E.lc and (b) E II c.
(From Hengehold and Fraime [8].)
REFERENCES
1. M. P. Lisitsa, V. N. Malinko, and S. F. Terekhova, Sov. Phys.-Semicond. 3,491
(1969).
2. J. F. Parrish, C. H. Perry, O. Brafman, I. F. Chang, and S. S. Mitra, in II-VI Semi-
conducting Compounds, edited by D. G. Thomas (Benjamin, New York, 1967), p.
1164.
4. R. Beserman and M. Balkanski, Phys. Rev. B 1,608 (1970).
5. R. Beserman, Solid State Commun. 23, 323 (1977).
Solidi 31, 389 (1969).
7. E. C. Fox, E. J. Canto-Said, and H. M. van Driel, Appl. Phys. Lett. 59, 1878
(1991).
8. R. L. Hengehold and C. R. Fraime, Phys. Rev. 174, 808 (1968).
D20 MERCURY ZINC TELLURIDE
(Hg1_~nxTe)

Hgl_..zn.Te is a semiconductor alloy whose band-gap energy can be tailored in the
range between -0.15 (x=O) and 2.25 eV (x=LO) [1,2] and has been proposed as an al-
ternative material to Hg1_",Cd",Te which is commonly used in bulk or epitaxial form for
IR optical devices_ A comprehensive review of the Hg1_..znxTe material properties,
crystal preparation techniques, and the fabrication and properties of IR detectors using
this alloy has been given by Rogalski [1]_

The band structure of Hgl_..zn.Te near the r point for three different values of the for-
bidden gap is illustrated in Fig. D20-1 [1]. The band-gap energy of this alloy ranges
from -0.15 eV for semimetallic HgTe, goes through zero at about 10% ZnTe, and
opens up to 2.25 eV for ZnTe (T-300 K). For alloys with x>0.10 the band structure is
very similar to that of InSb and nonparabolicity vanishes as the band gap widens with
increasing x.
From Ref. [3] we can estimate the static (£,) and high-frequency dielectric constants
(e..) for Hg1_..zn",Te at 80 K to be given by
£,(x) = 15.20 -14.09x + 6.18x 2 (D20.1)
£w(x) = 21.00-17.47x+ 654x2 (D20.2)
Resent study by Volz et al. [4] suggests the value of £w(x) at 295 K
£w(x) = 14.00-18.08x + 11.36x2 (D20.3)
Far-IR optical properties of Hg1_..zn",Te alloy have been studied by a number of

authors [3-6]. These studies conclude that the alloy system is of the two-mode type in
the lattice vibronic properties [3,4,6].
Azema et al. [7] fabricated Hg1_..znxTe optical waveguides by isothermal evaporation
of HgTe on ZnTe substrates and carried out the refractive-index measurements at 10.6
Ilm using an m-line analysis. Their obtained n values can be fitted by the following
polynomial expression (0.2$x:5:1.0) :
n(x) = 3.474 - 0.8407 x + 0.064216x2 (D20A)
582
D20 MERCURY ZINC TELLURIDE (Hgl .•Zn.Te) 583
Lattice constant (300KI (AI

6.461 6.400 6.300 6.200 6.103
2.5r-----~------------._----------._----------~
2.0
1.5
D-
g, 1.0
~
~
0.5 --.JA--r--.o.
-0.5 ~ ______---L________.l.-______---L_ _ _ _ _ _ _...I-.-,-_ _ _.....J

o 0.8 1.0
HoTe Mole fraction x ZnTe
Figure D20·1 Energy gap vs. mole fraction x for Hgl..zn.Te at 77 and 300 K, together with
schematic representation of the valence and conduction bands at the r point. (From Rogalski
[1].)
It should be noted that for x<O.5 the refractive-index curve ofEq. (D20A) deviates con-
siderably from Le Bastard's result of Eq. (D20.2). Large optical absorption observed in
the Hg1...znzTe/ZnTe waveguides (~O.5) may be one reason of this difference [7].
Optical absorption spectra at the fundamental absorption edge of Hg1.,zn..Te have
been measured by several authors [2,6,8]. These measurements demonstrate the sensi-
tivity afforded optical absorption measurements in determining the lowest-direct-gap
energies in pure (ZoTe) and alloyed samples [2,6,8] and their temperature coefficients
[2,6].
SE study on Hg1.,znzTe alloy has been carried out by Castaing et al. [9,10] in the
photon-energy range from 0.75 to 5.7 eV at room temperature. We reproduce in Fig.
D20-2 their obtained results [10]. The samples used in this study were grown by a trav-
eling-heater method with Te as the solvent. The variations with x of the CP parameters,
Eo+~, E 1, E1+d l , etc., have been determined by performing an SCP analysis [9,10].
REFERENCES
1. A. Rogalski, Prog. Quantum Electron. 13,299 (1989).
2. B. Toulouse, R. Granger, S. Rolland, and R. Triboulet, l. Phys. (France) 48, 247

(1987).
3. G. Le Bastard, R. Granger, S. Rolland, Y. Marqueton, and R. Triboulet, l. Phys.
(France) 50, 3223 (1989).
4. M. P. Volz, F. R. Szofran, S. L. Lehoczky, and C.-H. Su, Solid State Commun. 75,
943 (1990).
5. D. Bagot, R. Granger, and S. Rolland, Phys. Status Solidi B 183,395 (1994).
6. c.-H. Wu, D.-Y. Chu, C.-Y. Sun, and T.-R. Yang, lpn. l. Appl. Phys. 34, 4687
(1995).
7. A. Azema, P. Gaucherel, J. C. Roustan, R. Granger, and R. Triboulet, l. Appl.
Phys. 68, 6029 (1990).
8. F. EI-Akkad and A. R. Farhan, l. Phys. D: Appl. Phys. 28, 1958 (1995).
9. O. Castaing, J. T. Benhlal, R. Granger, and R. Triboulet, l. Cryst. Growth 159,
1112 (1996).
to. O. Castaing, J. T. Benhlal, R. Granger, and R. Triboulet, l. Phys. I (France) 6,
907 (1996).
·2
~~~~~~~~~~~~~
E (eV) E(eV)
Figure D20-2 (a) £I(E) and (b) q(E) spectra for Hg1.•Zn.Te alloy with x=O (HgTe), 0.216,
0.484,0.814, and 1.0 (ZnTe) measured by SE at 293 K. (From Castaing et al. [10].)
D21 MERCURY CADMIUM SELENIDE
(Hg1.xCd.-Se)

Hgl_xCdxSe is one of the Hg-based II b- V1b semiconductor alloys. Although the material
properties of Hgl_xCdxTe have been well established (see Sec. D22 below), very little is
known about Hgl_xCdxSe alloy.

Figure D21-1 shows the fundamental direct energy gap vs. x for Hgl_xCdxSe for tem-
peratures between 10 and 300 K [1]. We can understand from the figure that at all tem-
peratures studied the energy gap of Hgl_xCdxSe alloy bows below a linear interpolation
between the HgSe and CdSe values.
IR reflectivity spectra of Hgl_xCdxSe (x=O-0.32) have been reported by Kumazaki et
al. [2]. They found that the reflectivity spectra can be explained well by the dynamic
dielectric function which is constructed as a sum of interband, intraband, and phonon
contributions.
Optical absorption properties near the fundamental absorption edge of Hgl_xCdxSe
have been studied by Summers and Broerman [1] and by Kireev and Volkov [3]. These
studies demonstrate the sensitivity afforded optical absorption measurements in deter-
mining the fundamental absorption edge of Hgl_xCdxSe and its temperature dependence.
The IR transmission data were used to obtain the composition and temperature depen-
dence of the refractive index [1]. For temperatures between 5 and 300 K the refractive
indices were found to decrease with increasing x and at 5 K had values of 3 .92 and 2.68
for x values of 0.153 and 0.684, respectively. Note, however, that in their used fringe-
spacing analysis the refractive indices were assumed to be independent of wavelength.
The SE (fl> E-z) spectra for Hgl_xCdxSe (x=O, 0.03, and 0.1) have been measured by
Kumazaki et al. [4] in the l.7-5.6-eV region at 300 K. The Hgl_xCdxSe single crystals
were grown by the Bridgman method. We reproduce in Fig. D21-2 their measured f(E)
spectra [4]. The structures in E-z near 3 eV are due to the EI transitions.
REFERENCES
1. C. J. Summers and 1. G. Broerman, Phys. Rev_ B 21, 559 (1980).
585
2. K. Kumazaki, N. Nishiguchi, and M. Cardona, Solid State Commun. 58, 425

(1986).
3. P. S. Kireev and V. V. Volkov, Sov. Phys. Semicond. 7,949 (1974).
4. K. Kumazaki, L. Vifia, C. Umbach, and M. Cardona, Phys. Status Solidi B 156,
371 (1989).
(a)
(b) 1.20 r--'---,---,---,.--.,r--,.--'7"1
>
..!t
CI
w
~
•
•a.c
•
9'
0.40
l!
.! 0.20
~
I Experiment TIKI
t!' 0 • 10
-- ... 100
~.2O ---- • 200
0.1 0.2 0.3 0.4 0.6 0.6 0.7

Moll friction CdSe, x
Figure D21-1 (a) Schematic representation of the valence and conduction bands at the r point
of Hg1"CdxSe. (b) Fundamental direct energy gap vs. mole fraction x for Hg1.xCdxSe for tem-
peratures between 10 and 300 K. (From Summers and Broerman [1].)
D21 MERCURY CADMIUM SELENIDE (Hg1_.Cd.Se) 587
I~
IQ
8
ti
z
OIL-~------~----~------~5~--~6
'1K.J(eV)-
Figure D21·2 e(E) spectra for Hg1_.Cd.Se with x=o (HgSe), 0.03, and 0.11 measured by SE at
300 K. (From Kumazaki etal. [4].)
D22 MERCURY CADMIUM TELLURIDE
(Hg1_~dxTe)

Hg1_xCdxTe is one of the Hg-based I1b-V1b semiconductor alloys crystallizing in the
zinc-blende structure over the entire composition range (0~:S;1.0). The fundamental
optical absorption edge of Hg1_xCdxTe can be tuned by about 2 eV, running at 300 K
from 1.49 eV (1.53 eV) for CdTe to -0.14 eV (-0.12 eV) for HgTe with an inverted
r8-r6 ordering [1] ([2]). Among the Hg-based semiconductor alloys, Hg1_xCdxTe is the
most extensively studied alloy system because it has proved to be useful as a material
for high-performance photoconductive and photovoltaic IR detectors [3,4].

The band structure of Hg1_xCdxTe is essentially the same as that of Hg1_xZnxTe. Figure
D22-1 shows the lowest absorption edge of Hg1_xCdxTe as a function of x at 80 K [1].
1.8 ,...----.-----,--..-----,---,--.----.--.----.----,
1.6
1.4
1_2
1
>
Q)
0.8
t.ff 0.6
0.4
0.2
.. Magneto-optical Data Figure D22-1 A plot of the
o • Optical Absorption Data lowest absorption edge of
-0.2 Hg1_.Cd.Te as a function of
x at 80 K. (From Hansen et
- 0.4 L - -..........- - ' - - - I ' - -..........--'---''--~__'_--''---'' al. [1].)
o 0.2 0.4 0_6 0.8 1
X (Mole Fraction)
588
D22 MERCURY CADMIUM TELLURIDE (HgI<.Cd.Te) 589
Laurenti et al. [2] have shown that the x and T dependence of the fundamental absorp-
tion edge of this alloy can be accounted well for using a simple empirical formula (in
eV):
Eo(x,T) = -0.303(1- x) + 1.606x - 0.132x(l- x)
[6.3(1- x) - 3.25x - 5.92x(l- x)] x 1O-4 T 2
+----------------~---------- (D22.1)
l1(1-x) +78.7x+T
for all compositions, 0~SI.0, and temperatures OSTS500 K.

The static (e.) and high-frequency dielectric constants (e~) for Hgl<.Cd.Te given by
Patterson et al. [5] are written as
e.(x) =205 -15.6x + 5.7 x 2 (D22.2)
e~(x) = 15.2-15.6x+8.2x2 (D22.3)
Note that the above equations are not exact at the semimetal-semiconductor transition
region,x-0.15, where singularity occurs [6].
IR optical properties of Hgl<xCdxTe have been reported by a number of groups
[7-11]. These studies conclude that the alloy system is of the two-mode type in the
lattice vibronic properties [7-9]. Kozyrev et al. [11] also discussed the vibrational
modes in five basic Cd(4-n)Hg(n)Te (n=0,I,2,3,4) cells consisting of cations tetrahe-
drally distributed around a shared Te anion.
Optical absorption at the fundamental absorption edge of Hg1<..CdxTe has been stud-
ied by a number of authors [12-18]. As an example, we show in Fig. D22-2 the 0.(E)
spectra for Hgl<xCd.Te (0.170~$O.443) measured at 300 K by Chu et al. [16]. These
studies demonstrate the sensitivity afforded optical absorption measurements in deter-
mining the lowest-direct-gap energies in alloyed Hgl<.Cd.Te samples and their tem-
perature coefficients [12-16]. An empirical formula for the intrinsic optical absorption
coefficient at the Kane region is also derived as [19]
(D22.4)
with
0. ={500 + 5600x (at 77 K)
(D22.5)
g 80+ 7900x (at 300 K)
~ ={5.4 + 11x (at 77 K)

(D22.6)
24-18x (at 300 K)
where a, is in cm<1 and ~ is in e V<I.
The n(E) dispersion in Hgl<xCdxTe alloy has been determined by several authors
[13,14,20,21] at different temperatures from 77 K up to 350 K. Figure D22-3 shows the
results obtained by Kuoera [20]. The samples used in this study (0.18~S1.0) were
grown by a modified Bridgman method. The n(E) measurements were made by trans-
mittance interference spacing. The absolute values of n were accurate to 2% and the
principal error was due to the uncertainty in determining the sample thickness.
0
3 • • 0 •
• 0
• •
0
.,.
~
0 0
•
0 0
• • 0 0 0
0
..J
0
• 0
•
0
•
0 0
0
• 0 • 0
• HO i _. Cd. Te
0
0 • 300K
0
• •
0
2 0
• •
X = 0.170 0.200 0.226 0.276 0.330 0.366 0.416 0.443
E,= 0.1240.161 0.200 0.273 0.347 0.396 • 0.470 0.007 (eV)
0.10 0.20 0.30 0.40 0.00 0.60
Figure D22-2 Optical absorption spectra for Hg1 .•Cd.Te with x=0.170-0,443 measured at 300
K. The vertical arrows indicate the positions of the band-gap energy. (From Chu et al. [16].)
X=0.292
3.4
3.8 x.0.180
c (
c
3.2 r~0397
0.459
3.0~
0.522
2.6 (b) 80 K
1.3 1.5 o 0.1 0.2 OJ 0.4 0.5 0.6

0.9 1.1
E leV) E (eV)
Figure D22-3 Refractive-index dispersion for Hg1 .•Cd.Te with x=0.18-1.0 at (a) 300 K and (b)
80 K. (From Kucera [20].)
Liu et al. [21] have shown that the temperature dependence of n(A) can be expressed
well by the following equation:
022 MERCURY CADMIUM TELLURIDE (Hg1_.Cd.Te) 591
B
n(A.,T)2 =A+ 1-(C/A.) 2 +DA.2 (D22.7)
where A, B, C, and D are fitting parameters which vary with composition x and tem-
perature T. This formula was obtained from the experimental data for samples with
x--O.200-O,443 at T=4.2-300 K. The formula can also be used for HgI_.Cd.Te with x up
to 0.540 at different temperatures and with x=0.54-1.0 at room temperature by com-
parison with other experimental results [21].
The fundamental reflectivity spectra in the interband transition region (E=1.5-4 eV)
of Hgl_.Cd.Te have been measured at 315 K by Galazka and Kisiel [22J. The spectra
revealed structures at the EI and E1+d l CPs.
Optical properties in the interband transition region of Hgl_.Cd.Te have been studied
using SE at room temperature in the 1.8-5.5-eV spectral region by Vifia et al. [23] and
in the 1.5-6.0-eV region by Arwin and Aspnes [24]. The crystals used were grown by a
traveling-heater method [23] or by zone-melt refining [24]. Figure D22-4 shows the
e(E) spectra for Hgl_xCd.Te (O$x~1.0) measured by Vifia et al. [23]. Structures at ener-
gies of the E 1, E1+d1, and E,. CPs have been identified from these spectra.
The temperature dependence of the SE e(E) spectra of Hgl_xCdxTe has been dis-
cussed by Kim and Sivananthan [25]. SE has also been used by several authors to char-
acterize the surfaces of HgI_.Cd~Te [26-8]. More recently, Benson et al_ [29] have
15 15
(b)
10
10
£1
5 £2
5
0
Hg1-xCdxTe
-5 0
6 6
Figure D224 E(E) spectra for HgI_.Cd.Te measured by SE at 300 K. (From Vifia et al. [23].)
equipped an in-situ SE on an MBE system to improve control of Hg1.xCdxTe growth.

In-situ analysis of composition, growth rate, and surface cleanliness were monitored
using this device.
REFERENCES
1. G. L. Hansen, 1. L. Schmit, and T. N. Casselman, f. Appl. Phys. 53,7099 (1982).
2. 1. P. Laurenti, 1. Camassel, A. Bouhemadou, B. Toulouse, R. Legros, and A. Lus-
son, f. Appl. Phys. 67,6454 (1990).
3. C. T. Elliott, in Properties of Narrow Gap Cadmium-Based Compounds, EMIS
311.
4. I. M. Baker, in Properties of Narrow Gap Cadmium-Based Compounds, EMIS
Datareviews Series No. 10, edited by P. Capper (lNSPEC (lEE), London, 1994), p.
323.
5. 1. D. Patterson, W. A. Gobba, and S. L. Lehoczky, f. Mater. Res. 7,2211 (1992).
6. A. N. Pikhtin and A. D. Yas'kov, Sov. Phys.-Semicond. 22, 613 (1988).
7. 1. Baars and F. Sorger, Solid State Commun. 10, 875 (1972).
8. D. N. Talwar and M. Vandevyver, f. Appl. Phys. 56,1601 (1984).
9. S. P. Kozyrev, V. N. Pyrkov, and L. K. Vodop'yanov, Sov. Phys. Solid State 34,
1984 (1992).
10. D. Bagot, R. Granger, and S. Rolland, Phys. Status Solidi B 183,395 (1994).
11. S. P. Kozyrev, L. K. Vodopyanov, and R. Triboulet, Phys. Rev. B 58, 1374
(1998).
12. M. W. Scott, f. Appl. Phys. 40, 4077 (1969).
13. E. Finkman and Y. Nemirovsky, f. Appl. Phys. 50,4356 (1979).
14. L. D. Saginov, V. P. Ponomarenko, V. A. Fedirko, and V. I. Stafeev, Sov. Phys.
Semicond. 16,298 (1982).
15. E. Finkman and S. E. Schacham, f. Appl. Phys. 56,2896 (1984).
16. 1. Chu, Z. Mi, and D. Tang, Infrared Phys. 32,195 (1991).
17. B. Li, 1. H. Chu, Y. Chang, Y. S. Gui, and D. Y. Tang, Infrared Phys. Technol. 37,
525 (1996).
18. V. Nathan,f. Appl. Phys. 83, 2812 (1998).
19. 1. Chu, B. Li, and D. Tang, 1. Appl. Phys. 75,1234 (1994).
20. Z. Kucera, Phys. Status Solidi A 100,659 (1987).
21. K. Liu, 1. H. Chu, and D. Y. Tang,]. Appl. Phys. 75, 4176 (1994).
22. R. R. Galazka and A. Kisiel, Phys. Status Solidi 34, 63 (1969).
23. L. Vina, C. Umbach, M. Cardona, and L. Vodopyanov, Phys. Rev. B 29, 6752
(1984).
24. H. Arwin and D. E. Aspnes, 1. Vac. Sci. Technol. A 2,1316 (1984).
25. C. C. Kim and S. Sivananthan,]. Electron. Mater. 26,561 (1997).
26. D. E. Aspnes and H. Arwin, 1. Vac. Sci. Technol. A 2, 1309 (1984).
27. D. R. Rhiger,]. Electron. Mater. 22, 887 (1993).
D22 MERCURY CADMIUM TELLURIDE (Hg1_xCdxTe) 593
28. G. J. Orloff and P. B. Smith, 1. Vac. Sci. Technol. A 12, 1252 (1994).
29. J. D. Benson, A. B. Comfeld, M. Martinka, K. M. Singley, Z. Derzko, P. 1.
Shorten, J. H. Dinan, P. R. Boyd, F. C. Wolfgram, B. Johs, P. He, and 1. A.
Woollam, 1. Electron. Mater. 25, 1406 (1996).
D23 ZINC-BASED SEMIMAGNETIC TERNARY
ALLOYS
(Zn1_..Mn,.8, Zn1_..Mn,.8e, etc.)

Semimagnetic (or diluted magnetic) semiconductors are semiconducting crystals whose
lattice is made up in part of substitutional magnetic ions (Mn, Fe, Co, etc.). Semimag-
netic semiconductors have been in the last years the object of intense investigations due
to their interesting material properties (see, e.g., Ref. [1]). Most extensively investigated
has been the Mn-doped semimagnetic semiconductor family, in which the Mn2+ (3cf)
ion has a 6SSf2 free-ion ground level. We discuss here the optical constants and spectra of
some Zn-based semimagnetic ternary semiconductors (ZnI ....Mn~S, ZnI ....Mn~Se, Zn l.
~n~Te, Znl_~e~Se, and Znl..,Co~Se).

(a) Znl-..Mn..8--The Znl....Mn~S crystals have, in general, zinc-blende structure for
OSt<O.l and wurtzite structure for 0.1~0.5. At high Mn concentrations the crystals
show both wurtzite and NaCI structures. The optical absorption spectra for Mn-doped
II-VI semiconductors show rather sharp transitions due to the internal transitions within
the Mn2+ ion. The positions of such absorption peaks (-2.2-3.2 eV) are at most slightly
dependent on temperature and concentration of Mn and weakly dependent upon the
particular host II-VI system (ZnS, CdS, ZnSe, ZnTe, etc.; see Ref. [2]). In the Zns
system (Le., ZnI-xMn~S), all these (five) absorption bands are observed below the intrin-
sic absorption edge [3-6]. We reproduce in Fig. D23-1 the ex(E) spectra for ZnI_~nxS
(x=0.15) for (a) E II cat T=19, 83, and 293 K and (b) those for E II c and EJ.c at T=19
K [6]. The sharp rise in ex beyond E-3.4 eV at 293 K [Fig. D23-1 (a)] suggests the onset
of band-to-band absorption, found at -3.6 eV for x-0.15 [7].
The fundamental reflectivity spectra of Znl_xMnxS have been studied in the 0.7-8.1-
eV range at 300 K by Zimnal-Starnawska [8] (x=5xlO-6-O.02) and in the 11-20-eV
range at 115 and 300 K by Flach et al. [9] (x=0.003-0.201). In Ref. [8], the R spectrum
of Zns doped with 0.0005% Mn (x=5xlO-6) was found to be similar to that of pure ZnS.
For higher concentrations of Mn the reflectivity spectra of Znl-xMn~S showed additional
maxima between -5.7 (E I ) and -7.0 eV (E2 ). The ZnS-related structure, visible for low-
er concentrations, disappeared quickly as the content of Mn increased. In Ref. [9], it
594
D23 ZINC-BASED SEMIMAGNETIC TERNARY ALLOYS 595
In •.• un. S: ...0.15

T.19K
---EIC
~E1C
-T.19K
--T.83K
. ---- T. 293K
10° t,!--:!-:~:::!-:::--::IL;;-+';--:~--;;l,;-~
3.0 3.2 3.4 3.6 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Figure D23-1 Absorption spectra for Zn1_xMnxS (x=0.15) for (a) Ell c at T=19, 83, and 293 K
and (b) those for E II c and EJ.c at T=19 K. (From MacKay et al. [6].)
was found that the core-level and interband transitions are affected much less by the
interaction of the Mn 3d states with the anion derived upper valence bands than the CP
transitions below 11 eV.
(b) Zn1...Mn..se-Znl_xMnxSe alloy crystallizes in the zinc-blende structure for x<O.35

and in the wurtzite form for 0.35<x<0.55. The optical absorption spectra for Znl_.MnxSe
crystals have been studied by several authors [10,11]. Four well-resolved bands below
the fundamental absorption edge are observed corresponding to internal transitions from
the ground to the excited states within the Mn2+ ion. An initial decrease of the band-gap
energy with x was found for T from 28 to 300 K [11]. A break in the monotonic depen-
dence of the energy gap with temperature was also observed in Ref. [11] at high Mn
concentrations and low temperatures. Room-temperature absorption measurements as a
function of hydrostatic pressure on Znl-..MnxSe for O~<O.25 have also been carried out
by Yes et al. [12].
SE study on MBE-grown Znl_xMn,Se (0~.144) on (ool)GaAs have been per-
formed by Kim et al. [13] in the 3.5-5.5-eV range at room temperature. We reproduce
in Fig. D23-2 their obtained results [13]. The structures corresponding to the EI and
EI+.1.1 CPs shift slightly to lower energies and broaden to merge into a single peak as
the Mn concentration increases. Note that extra structures below 4 eV for x=O.022 and
0.144 arise from interference effects due to the small thickness of the samples used.
The fundamental reflectivity spectra of ZnI.,MnxSe have been studied in the 0.7-8.1-
eV range at 300 K by Zimnal-Starnawska [8] (x=O and 0.1) and in the 4-25-eV range
at 77 and 300 K by Kisiel et al. [14] (x=0-D.3). As in ZnI_.MnxS [9], the core-level and
interband transitions in ZnI_xMnxSe are found to be affected much less by the interaction
of the Mn 3d states with the anion derived upper valence bands than the CP transitions
below 11 eV [14]. The reflectivity spectra obtained by Kisiel et al. [14] at 300 K are
reproduced in Fig. D23-3.
15
(a) E1 16 Zn 1·xMnxSa
x- 0
(b)
10 0.022 12
£1 0.053
x=
0.069 8
5 £2 0
0.108
4
0.144
0
0
Zn1•xMnxSa
0.144
-5 -4
2.5 3.5 4.5 5.5 2.5 3.5 4.5 5.5
E (eV) E (eV)
Figure D23·2 £(E) spectra for ZnI...Mn.8e (x=O-O.144) at 300 K. Spectra are offset by incre-
ments of2 relative to the center spectrum of the 5.3% sample. (From Kim et al. [13].)
(a) (b)
x-0.10
x_O.30
4 5 678 9 10 10 12 14 16 1e 20 22 24
Figure D23·3 Reflectivity spectra for ZnI-xMn.Se (x=O, 0.10, and 0.30) at 300 K. (From Kisiel
et at. [14].)
(c) Znl..MnxTe--Zn•..xMnxTe is a semimagnetic semiconductor crystallizing in the zinc-

blende structure for r-;;O.75. The optical absorption in Znl.xMnxTe has been studied by
Morales ToTO et al. [15]. In an x-O.6 sample, new absorption bands are found at 2.605
and 2.745 eV, together with two lower energy bands seen also in an x-OJ sample. All
these bands are attributed to intra-ion transitions of the Mn2+ ions. Room-temperature
absorption measurements as a function of hydrostatic pressure on Zn,...Mn.Te for

OSX<O.25 have also been carried out by Yes et al. [16]. It is found that the Mn2+-related
absorption band exhibits a red shift under pressure.
The fundamental reflectivity near the Eo-edge region ofZn, ...Mn..Te (OSX :50.632) has
been studied by Mertins et al. [17] for temperatures between 6 and 300 K. We repro-
duce in Fig. D23-4 the results obtained at T=6 K [17]. The band-gap energies as a func-
tion of x and temperature T are deduced from these studies. The overall composition
dependence is found to be approximated by two linear functions for the concentration
ranges 0~:50.1 and x>0.1, respectively. This type of band-gap anomaly can be ex-
plained within the framework of exchange interaction.
The fundamental reflectivity spectra of Zn'.xMn,Te (0~:50.53) in the 0.5-1O-eV
range have been reported by D~bowska et al. [18]. Energies of some CPs, such as Eo, E"
E,+.:1, (.:1,), E2 , and E,', as a function of x were determined.
45 ~
x=O.632
h x=O.508
40
~O.330
-==
..........
~
35 ,1-,,,,,.,,.
>-
~., x=O.119
= 30
>
~tX=O'073
u
Q)
00-
Q)
.....
Figure D23-4 Reflectivity spectra
x=O.Ot4 near the Eo-edge region of Zn,.
t··
25 ,Mn,Te (~O.632) at 6 K. Ex-
cept for ZnTe (x=O) all spectra are
zero-shifted for clarity. (From
Mertins et al. [17].)
20
2.4 2.6 2.8 3.0

energy (eV)
(d) ZnlJexSe--The solubility of transition metals in ZnSe varies within wide limits.
The monophase zinc-blende structure of Zn 1•xFexSe can be preserved even up to 13% of
Fe [19]. The absorption coefficients of Zn 1_xFexSe (.x=0, 0.01, and O.OS) were measured
below the fundamental absorption edge of the ZnSe host compound at 300 K using
photoacoustic technique [20]. The samples with .x=0.01 and O.OS showed two structures
at 1.4 and 1.S eV that can be interpreted as due to weak, spin forbidden 5E~3Tl [Fe2+
(3d') d~d*] transitions.
Optical properties in the interband transition region of Zn 1_xFexSe have been studied
using SE at 300 K in the 3.5-S.5-e V region by Kim et al. [13]. The samples were grown
by MBE on (OOl)GaAs substrates. We reproduce in Fig. D23-S the £(E) spectra for Zn 1_
xFexSe (.x=0---{).122) measured by Kim et al. [13]. Distinct structures at energies of the El
and El+LlI CPs can be easily identified; note, however, that these structures broaden to
merge into a single broad peak as x increases. Note also that extra structures below 4 eV
for some samples (see, e.g., .x=0.022) arise from interference effects due to the small
thickness of the samples used.
The fundamental reflectivity spectra of Znl_~exSe have been studied in the 4-2S-eV
range at 77 and 300 K by Kisiel et al. [14] (.x=0-0.1). As in Zn 1_xMnxS(Se) [9] ([14]),
the core-level and interband transitions in Zn 1_xFexSe are found to be affected much less
by the interaction of the Fe 3d states with the anion derived upper valence bands than
the CP transitions below 11 eV (see Fig. D23-3).
£1:: '~~5~
(0) E,
: ~:~
o O.122~~\~
Zn 1-)(FexSe
-4 ~~ __~__~~__~__L-~ -3 ~--L_ _...J.-_ _.L----L_ _- ' -_ _- ' - - - '
2.5 3.5 4.5 5.5 2.5 3.5 4.5 5.5

E (eV) E (eV)
Figure D23-S £(E) spectra for Zn1_xFexSe (x=O-O.l22) at 300 K. Spectra are offset by incre-
ments of 2 relative to the center spectrum of the 5.0% sample. (From Kim et al. [13].)
(e) Znl-xCo..se-The monophase zinc-blende structure of Znl_.Co.Se can be preserved

even up to 2% of Co [19]- The absorption coefficients of ZnI_.Co.Se (x=O. 0.001. and
0.015) were measured below the fundamental absorption edge of the ZnSe host com-
pound at 300 K using photoacoustic technique [20]. The samples with .x=0.001 and
0.015 showed two prominent structures centered at 0.77 and 1.65 eV. as shown in Fig.
D23-6. The two structures correspond to the well-known d~d* transitions within the
C02+ (3d7) crystal-field split manifold. Felici et al. [20] also measured a(E) spectra of
Znl~i.Se (x=O and 0.01) and observed the Ni2+-related structures at -1.1. 1.42. and
1.52 eV.
-.
25~----------------------~
........"'...."". " x=<J.OOO

",.
. • x=O.OOl
....
2.0
'; rr
• x=O.OIS
....... I
::i
<"d
~ 15 •
1
... , I
.".,' i
.. .
"-,'., ;;'"'. . ""'" II ...----11
III
o
.~ 1.0
JJ' 1 • • '- ~
g .: A..A
~
9 'V · I ..
.8
0~:"
05 ,
Il.. :
~UP_......
..... _-u-..,)
0.0' \t 0 .. '. ...
O_S 1.0 I.S 2.0 2.S 3.0

Photon energy (eV)
Figure D23-6 Photo acoustic spectra of Zn1_.Co.Se (x=O. 0.001. and 0.015) below the funda-
mental absorption edge of the ZnSe host compound at 300 K. (From Felici et al. [20].)
SE has been used to study optical properties of Znl_.Co.Se in the 3.5-5.5-e V region at
room temperature [13]. The samples were epitaxial films grown by MBE on (lOO)GaAs
substrates (.x=0-0.094). CP parameters of the EI and E1+d l gaps as a function of x were
successfully determined by performing an SCP analysis.
The fundamental reflectivity spectra of Znl-xCo.Se (.x=0-0.05) have been studied in
the 4-25-eV range at 77 and 300 K by Kisiel et al. [14]. Figure D23-7 reproduces the
results of Kisiel et al. [14]. As in Znl_.Mn.S [9] and Zn1-xMn(Fe).Se [14]. the core-level
and interband transitions in Znl_.Co.Se are found to be affected much less by the inter-
(b)
x-O
~.03
x=0.05
x=0.05
5 678 9 10 10 12 14 16 18 20 22 24
Figure D23·7 Reflectivity spectra for Zn1.xCoxSe (x=0-0.05) at 300 K. (From Kisiel et al. [14].)
raction of the Co 3d states with the anion derived upper valence bands than the CP tran-
sitions below 11 eV. Kisiel et al. [14] also reported the R(E) spectra of Zn o.99 Me o.QlSe
(Me=Ti, V, Cr, and Ni) measured at 77 and 300 K.
REFERENCES
1. J. K. Furdyna and J. Kossut, in Semiconductors and Semimetals, edited by R. K.
Willardson and A. C. Beer (Academic, Boston, 1988), Vol. 25.
2. J. W. Richardson and G. J. M. Janssen, Phys. Rev. B 39, 4958 (1989).
3. D. S. McClure,J. Chern. Phys. 39,2850 (1963).
4. D. Langer and S. Ibuki, Phys. Rev. 138, A809 (1965).
5. H. E. Gumlick, R. L. Pfrogner, J. C. Shaffer, and F. E. Williams, J. Chern. Phys.
44,3929 (1966).
6. J. F. MacKay, W. M. Becker, J. W. Richardson, J. K. Furdyna, and W. Giriat,
Phys. Rev. B 40,11940 (1989).
7. O. Goede, W. Heimbrodt, M. Lamia, and V. Weinhold, Phys. Status Solidi B 146,
K65 (1988).
8. M. Zimnal-Starnawska, M. Podg6my, A.Kisiel, W. Giriat, M. Demianiuk, and J.
Zmija,J. Phys. C: Solid State Phys. 17,615 (1984).
9. E. Flach, H.-E. Gumlich, Ch. Jung, and M. Krause, Phys. Status Solidi B ISS, 317
(1989).
10. J. E. Morales, W. B. Becker, B. I. Wang, U. Debska, and J. W. Richardson, Phys.
Rev. B 40, 1186 (1989).
11. L. Martinez, L. R. Gonzalez, and W. Giriat, Phys. Status Solidi B 180,267 (1993).
12. S. Yes, K. Strossner, W. Gebhardt, and M. Cardona, Solid State Commun. 57,335
(1986).
13. Y. D. Kim, S. L. Cooper, M. V. Klein, and B. T. Jonker, Phys. Rev. B 49, 1732
(1994).
14. A. Kisiel, M. Piacentini, D. Dybowska, N. Zema, F. Lama, M. Zimnal-Stamawska,
W. Giriat, A. Holda, and R. Markowski,l. Phys.: Condens. Matter 9, 8767 (1997).
15. J. E. Morales Toro, W. M. Becker, B. I. Wang, U. Debska, and J. W. Richardson,
Solid State Commun. 52,41 (1984).
16. S. Yes, K. Strossner, W. Gebhardt, and M. Cardona, Phys. Rev. B 33, 4077 (1986).
17. H.-C. Mertins, H.-E. Gumlich, and Ch. Jung, Semicond. Sci. Technol. 8, 1634
(1993).
18. D. Dybowska, A. Kisiel, A. Rodzik, F. Antonangeli, N. Zema, M. Piacentini, and
W. Giriat, Solid State Commun. 70, 699 (1989).
19. I. Hwang, H. Kim, J.-E. Kim, H. Y. Park, and H. Lim, Phys. Rev. B 50, 8849
(1994).
20. A. C. Felici, F. Lama, M. Piacentini, T. Papa, D. Debowska, A. Kisiel, and A.
Rodzik, 1. App. Phys. 80, 6925 (1996).
D24 CADMIUM-BASED SEMIMAGNETIC
TERNARY ALLOYS
(Cd1_..Mn~e, Cd 1_..Mn xTe, etc.)

Semimagnetic (or diluted magnetic) semiconductors are semiconducting crystals who-
se lattice is made up in part of substitutional magnetic ions (Mn, Fe, Co, etc.). Semi-
magnetic semiconductors have been in the last years the object of intense investigations
due to their interesting material properties (see, e.g., Ref. [1]). Most extensively inves-
tigated has been the Mn-doped semimagnetic semiconductor family, in which the Mn2+
(3d') ion has a 6SSf2 free-ion ground level. Let us discuss here the optical constants and
spectra of some Cd-based semimagnetic semiconductors (CdtoxMnxSe, Cdt_xMnxTe, Cd t_
xFexSe, and Cd1_xFexTe).

(a) Cdl.#nXSe--Cdl_xMnxSe is a semimagnetic semiconductor crystallizing in the
wurtzite structure for O:5.x<O.5. Multiple phases coexist in the mixed crystals in the
composition range O.5<.x<O.95, while pure MnSe itself may crystallize in three differ-
ent forms. The effect of hydrostatic pressure on the absorption edge of Cd1_xMnxSe
(O.05:5.x:5:0.45) has been studied by Jiang et aZ. [2] at pressures up to 10 GPa and at
room and low temperatures. The Cd1_xMnxSe single crystals were grown by the modi-
fied Bridgman method. They found a pinning behavior for a sample with x=O.45, that is,
the pressure coefficient decreases from about 6xl0-2 eV/GPa at low pressures to almost
zero at pressures p> 1 GPa. The pinning is attributed to the effect of the intra-ion transi-
tions of Mn2+.
Reflectivity, RS, and PL studies have been performed on Cd1_xMnxSe epilayers
(O:5.x<O.75) grown by MBE on (OOl)GaAs substrates [3]. Note that these epilayers ex-
hibit the cubic structure, even though in bulk crystal growth these alloys crystallizes in
the wurtzite form. The energy gap vs. x was studied by reflectivity and PL. Figure D24-
1 shows the relative refractive index of CdSe, Cdo.2sZno.7sSe, and Cdo.2sMno.7sSe at T=1O
K [3]. These data were obtained by analyzing the reflectance interference spacing. The
energy gaps of CdSe and Cdo.zsMno.7sSe at 10 K are 1.75 and 2.73 eV, respectively [3].
We can thus conclude that the Cd10xMnxSe alloy system does not show a refractive-
index anomaly (such that a smaller Eo-gap material has a smaller refractive-index
602
D24 CADMIUM-BASED SEMIMAGNETIC TERNARY ALLOYS 603
value). Note that some of the III-V alloys (e.g., Ga)nl.xAsySb l) show such a refrac-
tive-index anomaly (see Ref. [4]). RS data also suggested that cubic Cdl_xMnxSe alloy
system is of the two-mode type in the lattice vibronic properties [3].
T - 10K
Z
0
t5«
0:
LL
W
0:
LL
0
X
W
0
~
w
2::
!«..J
W
0:
1.0 1.2
PHOTON
Figure D24·1 Relative refraction index of CdSe, Cdo.25Zno.7sSe, and Cdo.25 Mllo.7sSe at T=lO K.
(From Alonso et al. [3].)
(b) Cd1...MnrTe-Cdl_xMnxTe crystallizes in the zinc-blende structure for x up to 0.77

[I), and the fundamental energy gap varies from 1.6 eV for x=0 to 2.7 eV for x=D.7 at
T=4 K [5]. Far-IR optical properties of Cdl_xMnrTe have been reported by several
authors [6,7]. In Ref. [6], the absorption spectra of bulk Cdl_xMnrTe (x=0-0.64) were
reported in the spectral range between 15 and 700 cm- I and temperature range between
10 and 300 K. The phonon-related absorption bands were identified. In Ref. [7], char-
acterization of Cdl_rMnrTe films grown by MOCVD (x=0.10-0.30) has been made by
IR reflectivity measurements.
Piezomodulation technique has provided signatures which are easily recognized and
interpreted as the Mn2+ internal transitions as distinguished from excitonic or interband
transitions [8]. Magnetooptical properties in the Eo edge of MBE-grown Cd1_rMnxTe
films (x=0.09, 0.16, 0.34) have been studied at T=l K in magnetic fields up to 5 T by
Limmer et al. [9]. A large splitting of the twofold-degenerate r6 conduction band and
the fourfold-degenerate rs valence band is observed in the absorption spectra. Their
obtained results are shown in Fig. D24-2 [9]. The strong absorption line is found to
shift with increasing B while the weak structure almost maintains its position. Magne-
tooptical properties at the fundamental absorption edge of Cdl_rMnxTe have also been
Wavelength I nm I
750 730 710 690 670
~~~~~~~
.
e+
1.65 1.70 1.75 1.80 1.85

Energy I eV I
Figure D24·2 Absorption spectra of MBE-grown Cd1o.Mn.Te (x=0.09) for B=O to 5 T with
right- (e+) and left-circularly (eJ polarized lights at T=l K. (From Limmer et at. [9].)
studied by means of Farady rotation [10-12], magneto-photoconductivity [13,14], and

Zeeman splitting [15].
The composition and wavelength dependence of the refractive index of Cd1o.Mn.Te
(x=0.12-0.70) has been determined by measuring reflectivity in the range from 0.5 to
2.5 eV at 300 K [16]. The single-crystalline films were grown by MBE on (OOl)CdTe
substrates. The measured n(E) data were modeled by the following three-parameter
dispersion relation:
(D24.1)
The A, B, and C are found to be written as

A(x)=7 AO-6.652x+ 1O.851.r-6.553r
B(x)=0.12 eV-2 (D24.2)

C(x)=1.655+1.411x-0.118.r+1.824r eV
Figure D24-3 represents the nee) curves for 0.12::;X::;0.70, as given by Eq. (D24.1) [16].
3.00
2.90
2.60
2.70
I=l
2.60
2.50
2.40
0.5 1.0 1.5 2.0 2.5 3.0
Energy (eV)
Figure D24-3 neE) curves for different Mn concentrations of Cd(_,Mn,Te films (T=300 K), as
given by Eq. (D24.1). (From Schubert et al. [16].)
The fundamental reflectivity in the interband transition region of Cd1_xMnxTe has

been measured by a number of groups [17-19]. Energies of some CPs, Eo, Eo+Ilo,E(,
E(+!l(, E2 , E(', and E( '+!l( " as a function of x are determined in these studies for x up to
0.5. The (c(, ~) data in the interband transition region have also been determined using
SE at room temperature in the 1.5-5.5-eV region by Lautenschlager et al. [20] and in
the 1.5-5-eV region by Chandra et al. [21]. The measured samples were bulk Cd(_
xMnxTe crystal (0::;X::;0.70) [20] or films deposited by sublimation from stoichiometric
alloys (0::;X::;0.6) [21]. We reproduce in Fig. D24-4 the results obtained by Lauten-
schlager et al. [20]. The CP (E(, E1+!l(, and E~ parameters have been successfully de-
termined, as a function of x, from an SCP line-shape analysis of the measured c(E)
spectra [20].
x up to 0.20 [22],
(c) CdI_xFexSe-Cdl_xFe,Se crystallizes in the wurtzite structure for
and the fundamental energy gap varies from 1.83 e V for x=O to 1.92 eV for x=0.07 at
T= 10 K [23]. The absorption coefficients of Cd(_xFexSe (x=O, 0.01, and 0.02) were
measured below the fundamental absorption edge of the CdSe host compound at 300 K
12r-----------~------~--~
(b)
9
Cdl-x Mn xTe
3
(a) 3 _._.-x=O.O(CdTel
------ x=Q20
- - x =0.45
O~+-~--~--+--+--~-9~,~
---x =0.70
2 3 4 5\ '"
E (eV) \
\
~~----------------------~~
Figure D24-4 E(E) spectra for Cdl..Mn.Te (x=0. 0.20.0.45. and 0.70) at 300 K. (From Lauten-
schlager et al. [20].)
using photoacoustic technique [24]. The alloyed samples (x=O.Ol and 0.02) showed
two structures at 1.4 and 1.48 e V that can be interpreted as due to weak. spin forbidden
sE--+3T, [Fe2+ (3£f) d--+d*] transitions. Magnetoreflectance measurements at the exciton
resonance of Cd,-xFexSe (xg).13) have also been made to study exchange interaction
between the band electrons and localized Fe 3d electrons [25].
The fundamental reflectivity in the interband transition region of Cd,..FexSe has been
studied in the. 1-12-eV spectral range (0~0.12) [22]. in the 4-1O-eV range
(0~O.l5) [26]. and in the 1O-25-eV range (0~SO.l4) [27]. Most of the CP structures
are broadened owing to structural. chemical. and also magnetic disorders.
(d) CdJ...Fe"Te--The incompatibility of the zinc-blende structure. in which CdTe crys-

tallizes. with the NiAs-type structure of FeTe imposes the upper limigt of the Fe con-
centration (xSO.06) for a uniform. stable phase of the alloy compound Cd,..,MnxTe [28].
Optical properties in the far-IR (20-100 cm· l ) and reststrahlen regions of Cd,-xMn.Te
(x=0.03 and 0.06) have been studied by Witowski et al. [29].
The fundamental reflectivity and absorption spectra in the Eo edge of Cd,..xMn.Te
(0~SO.05) have been measured by Holda et al. [30] at 77 and 300 K. The Eo-edge
position and properties of Fe states in the CdTe matrix have been given and discussed.
The reflectivity measurements have also been carried out on Cd,..xMnxTe (0~~0.05) in
the spectral range 1.0-30 e V at 77 and 300 K [31]. The influence of Fe2+ (3£f) states on
the changes in the energy positions of the reflectivity maxima (Eo. E,• E,+ll,• E2 • etc.)
has been discussed in this study [31].
REFERENCES
1. J. K. Furdyna and J. Kossut, in Semiconductors and Semimetals, edited by R. K.
Willardson and A C. Beer (Academic, Boston, 1988), Vol. 25.
2. S. Jiang, S. C. Shen, Q. G. Li, H. R. Zhu, G. L. Ju, and W. Giriat, Phys. Rev. B 40,
8017 (1989).
3. R. G. Alonso, Y. R. Lee, E. Oh, A K. Ramdas, H. Luo, N. Samarth, J. K. Furdyna,
and H. Pascher, Phys. Rev. B 43, 9610 (1991).
5. Y. R. Lee and A K. Ramdas, Solid State Commun. 51,861 (1984).
6. B. P. Clayman, T. A Orlowski, and P. Becla, 1. Appl. Phys. 66,835 (1989).
7. R. Sudharsanan, Z. C. Feng, S. Perkowitz, A Rohatgi, K. T. Pollard, and A Erbil,
1. Electronic. Mater. 18, 453 (1989).
8. Y. R. Lee and A K. Ramdas, Solid State Commun. 51,861 (1984).
9. W. Limmer, S. Bauer, H. Leiderer, W. Gebhardt, and R. N. Bicknell-Tassius, 1.
Phys.: Condens. Matter 2,8669 (1990).
to. J. A Gaj, R. R. Galazka, and N. Nawrocki, Solid State Commun. 25, 193 (1978).
11. G. Babonas, R. R. Galazka, G, Pukinskas, and A Sileika, Phys. Status Solidi B
154,389 (1989).
12. H. J. Jimenez-Gonzalez, R. L. Aggarwal, and P. Becla, Phys. Rev. B 45, 14011
(1992).
13. G. Couturier, D. Kaiser, S. von Molnar, and P. Becla, Phys. Rev. B 39, 1663
(1989).
14. H. Minami, T. Masumi, 1. Souma, and Y. Oka, Solid State Commun. 72, 31
(1989).
15. J. P. Lascaray, D. Coquillat, J. Deportes, and A K. Bhattacharjee, Phys. Rev. B 38,
7602 (1988).
16. D. W. Schubert, M. M. Kraus, R. Kenklies, and C. R. Becker, Appl. Phys. Lett. 60,
2192 (1992).
17. T. Kendelewicz, Solid State Commun. 36, 127 (1980).
18. M. Zimnal-Starnawska, M. Podgomy, AKisiel, W. Giriat, M. Demianiuk, and 1.
Zmija, l. Phys. C: Solid State Phys. 17,615 (1984).
19. A Kisiel, M. Piacentini, F. Antonangeli, J. Oleszkiewicz, A Rodzik, N. Zema,
and A Mycielski, 1. Phys. C: SoUd State Phys. 20,5601 (1987).
20. P. Lautenschlager, S. Logothetidis, L. Vina, and M. Cardona, Phys. Rev. B 32,
3811 (1985).
21. S. Chandra, L. K. Malhotra, and A. C. Rastogi, 1. Appl. Phys. 78,5645 (1995).
22. A. Sarem, B. J. Kowalski, and B. A. Orlowski, 1. Phys.: Condens. Matter 2, 8173
(1990).
23. J. Stankiewicz, 1. Appl. Phys. 70, 3937 (1991).
24. A C. Fe lic i , F. Lama, M. Piacentini, T. Papa, D. Debowska, A. Kisiel, and A.
Rodzik,1. App. Phys. 80, 6925 (1996).
25. A. Twardowski, K. Pakula, 1. Perez, P. Wise, and 1. E. Crow, Phys. Rev. B 42,
7567 (1990).
26. A. Kisiel, M. Piacentini, F. Antonangeli, N. Zema, and A. Mycielski, Solid State
Commun. 70, 693 (1989).
27. M. Piacentini, D. D~bowska, A. Kisiel, R. Markowski, A. Mycielski, and N.
Zema, 1. Phys.: Condens. Matter 5, 3707 (1993).
28. A. Mycielski, l. Appl. Phys. 63, 3279 (1988).
29. A. M. Witowski, A. Twardowski, H. Pohlmann, W. J. M. de Jonge, A. Wieck, A.
Mycielski, and M. Demianiuk, Solid State Commun. 70,27 (1989).
30. A. Holda, A. Rodzik, A. A. Mielnikow, and P. W. Zukowski, Phys. Status Solidi
B 189,543 (1995).
31. D. D~bowska, M. Zimnal-Stamawska, A. Rodzik, A. Kisiel, M. Piacentini, N.
Zema, and W. Giriat, 1. Phys.: Condens. Matter 5, 9355 (1993).
D25 QUATERNARY ALLOYS
(Zn1_,.Mg..sySe1_y and Mg..lnyCd1-X-ySe)
D2S.1 GENERAL REMARKS

The quaternary semiconducting alloys open new possibilities for materials engineering
as they enable independent control of three basic parameters, namely, the band-gap en-
ergy, lattice constant, and conduction- and valence-band offsets. We present here the
optical constants of Zn1.xMg",SySe1.yand Mg..znyCd1.",.ySe quaternary alloys.
D2S.2 OPTICAL CONSTANTS

(a) Zn1-Ng..s,se1.y-The first report on ZnSe-based laser structure was based on
ZnS",Se1.", cladding layers, ZnSe waveguide, and Zn",Cd1.",Se quantum wells [1,2]. It has
been demonstrated [3,4] that the optical as well as electrical confinement can be im-
proved by the use of Zn1.",Mg",SySe1.y quaternary as waveguide and cladding layers.
The fundamental energy gap of Zn1.",Mg",SySe1.y quaternary has been determined both
theoretically [5,6] and experimentally [7-9]. The samples used in these experiments
were grown by MBE on GaAs substrates. The alloy compositions investigated were x,
ySOA. Figure D25-1 shows a 3D plot of the band-gap energy Eg as functions of x and y
obtained by Lunz et al. [9]. These data were obtained from optical transmission and
reflection techniques.
Knowledge of the refractive indices of semiconductors in the region below or near
the fundamental absorption edge is often of interest in optoelectronic device design and
analysis. In Fig. 5.18 (Sec. 5.2.3), we have shown the n(E) curves of Zn1.xMg",SySe1.y
quaternary obtained by Lunz et aZ. [8]. The n(E) data for Zn1.",Mg",SySe 1.y (OSxS0.34,
OSyg).35) have also been determined by Ukita et aZ. [7] using a single-wavelength el-
lipsometry and reflectance technique. The data in Refs. [7,8] show that a smaller Eo-gap
material has a larger value of the refractive index, as in many alloy systems.
(b) Mg..znyCdl-x.ySe-The band-gap energy of Mg..(ZnoAsCdo.s2)1.",Se lattice-matched to

InP can be tuned from -2.1 eV (x=O) up to over 3.6 eV (x=l.O) at 15 K [10]. The qua-
ternary system is, thus, very attractive material system for full color visible optical de-
vices in wide wavelength range.
The n(E) data in the transparent region of Mg..(ZnoAsCdo52)1.",Se lattice-matched to InP
have been reported by Morita et ai. [11]. We reproduce in Fig. D25-2 their obtained
results. The n(E) data were evaluated from reflectance measurements. Accuracy of the
609
61()
4.4
S; 4.2 'fl",,,,,,·"
'/1'~A
~ 4
~3.S
~ 3.6
t>I) ,/ 1 " " '' '' ''
~3.4
&1
~ 3.2
3Wj~U
~~
2.S
photon E
3.0 ner~ le"l
Z.O
'\ . 5
3.5 M9xlZ,nO.4
&Cd o.62.) se
• ,\-X
"1.:= 0
.. 0.'\0
a 0.20
• 0.36
o 0.52 F ig u re 1>
• index 25-2 Refr ctive
_ 0M.6s3EO
__ dis a -
Mg.(2noA persion for
SCdo.5l)1..
tice_matc S e lat-
h
solid cuf' ed to 1nP. 'ftl.e
les represe
calculated nt the
modified results of the
model. (fro single-osc
m Moritailla tof
et at.
t11l.)
40 5 0 0
0 600 700
\JV8"e\e 600
Ogt h ( o
tn )
D25 QUATERNARY ALLOYS 611
experiment was not quoted. The measured n(E) data were fitted by the modified single-
oscillator model. The solid curves in Fig. D25-2 represent the results of this fitting.
REFERENCES
1. M. A. Haase, J. Qiu, J. M. DePuydt, and H. Cheng, Appl. Phys. Lett. 59, 1272
(1991).
2. H. Jeon, 1. Ding, W. Patterson, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobaya-
shi, and R. L. Gunshor, Appl. Phys. Lett. 59,3619 (1991).
3. H. Okuyama, K. Nakano, T. Miyazima, and K. Akimoto, Jpn. J. Appl. Phys. 30,
L1620 (1991).
4. H. Okuyama, T. Miyajima, Y. Morinaga, F. Hiei, M. Ozawa, and K. Akimoto,
Electron. Lett. 28,1798 (1992).
5. K. L. Teo, Y. P. Feng, M. F. Li, T. C. Chong, and J. B. Xia, Semicond. Sci. Tech-
nolo 9, 349 (1994).
6. Q. Guo, H. C. Poon, Y. P. Feng, and C. K. Ong, Semicond. Sci. Technol. 10,677
(1995).
7. M. Ukita, H. Okuyama, M. Ozawa, A. Ishibashi, K. Akimoto, and Y. Mori, Appl.
Phys. Lett. 63,2082 (1993).
8. U. Lunz, B. Jobst, S. Einfeldt, C. R. Becker, D. Hommel, and G. Landwehr, J.
Appl. Phys. 77,5377 (1995).
9. U. Lunz, C. Schumacher, J. NUrnberger, K. SchUll, A. Gerhard, U. SchUssler, B.
Jobst, W. Faschinger, and G. Landwehr, Semicond. Sci. Technol. 12,970 (1997).
10. T. Morita, A. Kikuchi, 1. Nomura, and K. Kishino, J. Electron. Mater. 25, 425
(1996).
11. T. Morita, H. Shinbo, H. Shinbo, T. Nagano, 1. Nomura, A. Kikuchi, and K. Ki-
shino, J. Appl. Phys. 81, 7575 (1997).
E
IV-VI SEMICONDUCTORS
E1 LEAD SULPHIDE
(PbS)
E1.1 GENERAL REMARKS

Lead sulphide (PbS) is a polar semiconductor crystallizing in the rocksalt crystal struc-
ture. This material exhibits properties which are unusual, and possibly unique, relative
to other semiconductors. For example, it possesses high dielectric constant, high mo-
bility, and a narrow fundamental band gap whose temperature coefficient is positive [1].
The material has been the subject of many research efforts, due to the technological
importance for use in a variety of IR optoelectronic device applications [2].
E1.2 ELECTRONIC ENEGY-BAND STRUCTURE

A number of theoretical calculations [3-5] and optical measurements [6] have given
detailed information about the electronic energy-band structure of PbS. Since the real
614 IV-VI SEMICONDUCTORS
lattice of PbS is a face-centered cubic lattice, the fITst BZ of this material is the same as
that of the diamond and zinc-blende materials (Le., truncated octahedron). Figure El-I
shows the energy-band structure of PbS as calculated with an EPM by Kohn et al. [4].
The electronic states are labeled with the use of a notation for the double-group repre-
sentations. The locations of several interband transitions are included in the figure.
These are the transitions which may play an important part in the analysis of various
optical-constant spectra. Table El-l lists the CP energies in PbS obtained experimen-
tally [7,8].
The valence-band maximum and the conduction-band minimum in PbS occur at the L
point. This material has, thus, a direct band gap, Eo=Ec(L6-)-E.(L6+)' at the L point. The
existence of a second, i.e., subsidiary, valence-band maximum on the L axis is also in-
dicated [4]. The dominant fundamental reflectivity features observed for photon energi-
es E<6 eV are the first shoulder, E1 , the highest peak in the reflectivity spectrum, E2 ,
and a high-energy shoulder on the main peak, E3 [8]. These transitions are expected to
take place at L (E 1), d (E2 ), and d (E3 ), respectively (see Fig. El-l). Reflectivity meas-
urements reveal additional weak peaks, E4 , E 5 , and E6, at energies higher than 8 eV [7].
10
PbS
8
~====== L~.s ..
K K X X rr A L
Figure El·l Electronic energy-band structure of PbS as calculated with an EPM. (From Kohn
et al. [4].)
El LEAD SULPHIDE (PbS) 615
TABLE El-l Energies of the CPs in the optical spectra of PbS at 300 K.
CPs eV
Eo 0.42
1.94
3.14
5.27
8.1
9.8
13.9
EL3 OPTICAL CONSTANTS

Optical properties in the reststrahlen region of PbS have been studied by several
authors [9,10]. A single-classical-oscillator analysis including a Drude tenn suggested
that the influence of free carriers on the optical constants is negligible for n:S;1016 cm-3 ,
at least out to 1.=1000 11m. A set of the reststrahlen parameters obtained by Geick [9]
are: £,=150, £~=16.8, roTO=71 cm-I (roLO=212 cm- I ), and "(=15 cm- I • The £~=16.8 value is
in good agreement with earlier measurement (£~=17.2. Ref. [11]). The slight depen-
dence of £~ on carrier density and temperature has also been discussed in Ref. [lO].
The refractive-index dispersion near the Eo edge of PbS has been measured on films
[11-14] and bulk samples [12]. The n data were determined from an analysis of the
interference pattern [11-14] or by measuring reflectivity spectrum using a cleaved sur-
face of n-type bulk material [12]. The accuracy of the measurements was reported to be
lO% or less. The experimental data showed a peak near the Eo edge (-0.42 e V at 300
K). This peak shifted to lower energies as the temperature increased due to the positive
temperature coefficient of Eo (dEoIdT>O). The temperature-dependent n data were re-
ported in Refs. [12,14] (see Fig. 5.26 in Sec. 5.2.3).
The optical absorption spectra in PbS have been measured at [13] or below the Eo
edge [15]. The materials used were n-type with carrier concentrations of -3xl0 18 [13]
and 2xl017 cm-3 [15] at 300 K. The Burstein-Moss effect was observed at 77 K
(n=1.1xlO I8 cm-3) [16]. but may be probably negligible at room temperature.
The fundamental reflectivity spectra in the interband transition region of PbS have
been measured by a number of authors [4.7,17-19]. By perfonning the KK analysis.
the (n. k) or (£1' Ez) values were extracted [4.7,17,18]. The CPs observed in these studi-
es were correlated with various electronic transitions in the BZ [4.7,19].
A set of the optical constants for PbS at room temperature have been determined us-
ing SE in the 1.5-5.3-eV spectral region by Kanazawa and Adachi [8]. The SE meas-
urements were made on cleaved PbS surfaces. The measured optical data revealed dis-
tinct structures at energies of the E 1• E2 , and E3 CPs.
Optical absorption spectra in the vacuum-UV region (36-150 e V) of some II-VI and
IV-VI compounds. including PbS. have been reported by Cardona and Haensel [20].
The PbS film measured by these authors was obtained by vacuum evaporation on a
noncrystalline substrate. and thus it was polycrystalline.
Table El-2lists the room-temperature values of £=£I+i€,z, n*=n+ik, a, and R for PbS.
A complete set of the optical constants for E-:;'0.07 eV were obtained from the rest-
strahlen parameters of Geick [9]. The Drude term was not included in this calculation.
The optical absorption constants, k and a, for 0.1~-:;'0.4 eV were taken from Vakulen-
ko et ai. [15]. A set of the optical constants for 0.1~-:;'1.3 e V were taken from Schoolar
and Dixon [13], while those for 1.5~-:;'5.3 eV were obtained from Kanazawa and Ada-
chi [8]. The absorption constants k and a for EC.37 eV were taken from Cardona and
Haensel [20].
The (£1' €.z), (n, k), a, and R values in Table EI-2 are graphed in Figs. EI-2-EI-5,
MDF.
REFERENCES
1. R. Dalven, in Solid State Physics, edited by H. Ehreinreich, F. Seitz, and D. Turn-
bull (Academic, New York, 1973), Vol. 28, p. 179.
2. See, for instance, G. P. Agrawal and N. K. Dutta, Semiconductor Lasers (Van
Nostrand Reinhold, New York, 1993).
3. P. J. Lin and L. Kleinman, Phys. Rev. 142,478 (1966).
4. S. E. Kohn, P. Y. Yu, Y. Petroff, Y. R. Shen, Y. Tsang, and M. L. Cohen, Phys.
Rev. B 8, 1477 (1973).
5. S.-H. Wei and A. Zunger, Phys. Rev. B 55, 13605 (1997).
6. G. Guizzetti and A. Borghesi, in Handbook of Optical Constants of Solids, edited
by E. D. Palik (Academic, Orlando, 1985), p. 525.
7. M. Cardona and D. Greenaway, Phys. Rev. 133, A1685 (1964).
8. H. Kanazawa and S. Adachi, I. Appl. Phys. 83, 5997 (1998).
9. R. Geick, Phys. Lett. 10,51 (1964).
10. J. R. Dixon and H. R. Riedl, Phys. Rev. 140, A1283 (1965).
11. R. B. Schoolar and J. N. Zemel,I. Appl. Phys. 35,1848 (1964).
12. H. R. Riedl and R. B. Schoolar, Phys. Rev. 131,2082 (1963).
13. R. B. Schoolar and J. R. Dixon, Phys. Rev. 137, A667 (1965).
14. J. N. Zemel, J. D. Jensen, and R. B. Schoolar, Phys. Rev. 140, A33o-(1965).
15. O. V. Vakulenko, M. P. Lisitsa, and Ya. F. Kononets, Sov. Phys.-Solid State 8,
1356 (1966).
16. E. D. Palik, D. L. Mitchell, and J. N. Zemel, Phys. Rev. 135, A763 (1964).
17. P. R. Wessel, Phys. Rev. 153, 836 (1967).
18. C. E. Rossi and W. Paul, I. Appl. Phys. 38, 1803 (1967).
19. M. Cardona, C. M. Penchina, E. E. Koch, and P. Y. Yu, Phys. Status Solidi B 53,
327 (1972).
35~~--~--~--~~--~
30
PbS
25
20
E3
15
w
10
1
5
o
-5
-100
12345 6
Photon energy (eV)
Figure El-2 £1(E) and ez(E) spectra for PbS at 300 K.
o 1 2 3 4 5 6
Photon energy (eV)
Figure El-3 neE) and k(E) spectra for PbS at 300 K.
107 !
E2! E3
Ell
106
GIl TO Eo
! f\
105
!
-
IE 104
0
~ 103
PbS
101
1~00_3 10-2 10-1 100 101 102

Photon energy (eV)
Figure El-4 r:JI..E) spectrum for PbS at 300 K.
0.7
E2!
0.6
El
II: 0.5 !
PbS
1 23456
Photon energy (eV)
Figure El·5 R(E) spectrum for PbS at 300 K.
E1 LEAD SULPHIDE (PbS) 619
Table El-2 Optical constants of PbS at 300 K.
eV 10 1 102 n k a (cm· 1) R
0.001 151.7 3.280 12.32 0.133 1.35E+01 0.722
0.002 156.9 7.093 12.53 0.283 5.74E+01 0.726
0.003 166.5 12.20 12.91 0.472 1.44E+02 0.733
0.004 182.3 20.03 13.52 0.741 3.00E+02 0.744
0.005 207.5 33.80 14.45 1.169 5.93E+02 0.759
0.006 248.9 62.46 15.90 1.965 1.20E+03 0.780
0.0065 279.0 90.02 16.91 2.661 1.75E+03 0.794
0.007 316.7 137.2 18.19 3.771 2.68E+03 0.810
0.0075 356.5 223.4 19.71 5.667 4.3IE+03 0.829
0.008 361.8 381.6 21.07 9.057 7.35E+03 0.852
0.0085 210.5 589.0 20.45 14.40 1.24E+04 0.877
0.009 -108.4 589.9 15.67 18.82 1.72E+04 0.901
0.0095 -260.7 382.9 10.06 19.03 1.83E+04 0.917
0.01 -255.5 224.5 6.505 17.26 1.75E+04 0.927
0.0125 -103.6 35.52 1.720 10.32 1.3IE+04 0.940
0.015 -50.70 12.76 0.889 7.176 1.09E+04 0.935
0.0175 -27.39 6.285 0.597 5.268 9.35E+03 0.921
0.02 -14.76 3.639 0.470 3.871 7.85E+03 0.890
0.0225 -7.031 2.325 0.433 2.687 6. 13E+03 0.813
0.025 -1.906 1.588 0.536 1.481 3.75E+03 0.529
0.0275 1.688 1.138 1.365 0.417 1.16E+03 0.053
0.03 4.316 0.847 2.087 0.203 6. 17E+02 0.128
0.0325 6.301 0.648 2.513 0.129 4.25E+02 0.187
0.035 7.839 0.508 2.801 0.091 3.22E+02 0.225
0.04 10.04 3.169 0.271
0.05 12.55 3.542 0.313
0.06 13.87 3.725 0.333
0.07 14.66 3.829 0.343
0.1 15.13 0.10 3.89 0.012 1.25E+02 0.349
0.15 16.40 0.027 4.05 0.0033 5.00E+01 0.365
0.2 16.89 0.013 4.11 0.0016 3.20E+01 0.370
0.25 17.06 0.0078 4.13 0.00095 2.40E+01 0.372
0.3 17.39 0.0055 4.17 0.00066 2.00E+01 0.376
0.36 18.06 0.0056 4.25 0.00066 2.40E+01 0.383
0.38 18.40 0.0062 4.29 0.00073 2.80E+01 0.387
0.4 18.75 0.016 4.33 0.0018 7.50E+01 0.390
0.42 19.09 0.55 4.37 0.063 2.70E+03 0.394
0.44 19.43 1.03 4.41 0.12 5.20E+03 0.398
0.46 19.05 1.87 4.37 0.21 1.00E+04 0.395
0.48 18.87 1.97 4.35 0.23 1.10E+04 0.393
0.5 18.60 2.22 4.32 0.26 1.30E+04 0.391
0.6 17.89 2.51 4.24 0.30 1.80E+04 0.384
0.7 17.88 2.63 4.24 0.31 2.20E+04 0.384
0.8 17.86 2.93 4.24 0.35 2.80E+04 0.385
0.9 17.99 3.36 4.26 0.39 3.60E+04 0.388
1 18.30 3.73 4.3 0.43 4.40E+04 0.392
1.1 18.60 4.20 4.34 0.48 5.40E+04 0.396
1.2 19.07 4.77 4.4 0.54 6.60E+04 0.402
1.3 19.70 5.44 4.48 0.61 8.00E+04 0.411
620 N-VI SEMICONDUCTORS
Table El-2 Continued (PbS).
eV £1 £2 n k ex (cm'l) R
1.5 20.24 7.184 4.567 0.787 1.20E+05 0.422
1.55 20.13 8.094 4.573 0.885 1.39E+05 0.426
1.6 20.16 8.830 4.592 0.961 1.56E+05 0.429
1.65 20.25 9.417 4.614 1.020 1.71E+05 0.433
1.7 20.25 10.10 4.631 1.090 1.88E+05 0.437
1.75 20.03 11.00 4.631 1.188 2. 11E+05 0.441
1.8 19.70 11.84 4.619 1.281 2.34E+05 0.444
1.85 19.08 12.64 4.581 1.379 2.59E+05 0.446
1.9 18.30 13.13 4.518 1.453 2.80E+05 0.445
1.95 17.60 13.31 4.453 1.494 2.95E+05 0.443
2 16.96 13.52 4.396 1.538 3. 12E+05 0.441
2.05 16.71 13.56 4.372 1.550 3.22E+05 0.441
2.1 16.67 13.61 4.370 1.557 3.32E+05 0.441
2.15 16.69 13.81 4.379 1.576 3.44E+05 0.443
2.2 16.74 14.12 4.396 1.607 3.58E+05 0.445
2.25 16.81 14.51 4.416 1.642 3.75E+05 0.449
2.3 16.86 14.99 4.440 1.688 3.94E+05 0.453
2.35 16.89 15.53 4.463 1.740 4. 14E+05 0.457
2.4 16.86 16.27 4.489 1.812 4.4IE+05 0.463
2.45 16.79 17.14 4.515 1.898 4.7IE+05 0.469
2.5 16.70 17.89 4.537 1.972 5.00E+05 0.475
2.55 16.26 18.80 4.534 2.073 5.36E+05 0.481
2.6 15.79 19.71 4.530 2.176 5.73E+05 0.487
2.65 15.20 20.61 4.517 2.281 6.13E+05 0.493
2.7 14.48 21.51 4.495 2.392 6.55E+05 0.499
2.75 13.75 22.39 4.473 2.503 6.98E+05 0.506
2.8 12.74 23.21 4.428 2.621 7.44E+05 0.513
2.85 11.67 24.04 4.381 2.743 7.93E+05 0.520
2.9 10.55 24.72 4.326 2.857 8.40E+05 0.526
2.95 9.115 25.43 4.250 2.992 8.95E+05 0.534
3 7.666 25.88 4.163 3.108 9.45E+05 0.541
3.05 6.062 26.24 4.061 3.230 9.99E+05 0.549
3.1 4.514 26.40 3.956 3.337 1.05E+06 0.557
3.15 2.967 26.38 3.842 3.434 1.10E+06 0.564
3.2 0.934 26.13 3.680 3.550 1.15E+06 0.573
3.25 -0.827 25.42 3.508 3.624 1.19E+06 0.581
3.3 -2.157 24.96 3.383 3.688 1.23E+06 0.588
3.35 -3.623 23.80 3.198 3.721 1.26E+06 0.594
3.4 -4.688 22.72 3.042 3.734 1.29E+06 0.598
3.45 -5.775 21.32 2.856 3.732 l.3IE+06 0.603
3.5 -6.521 19.90 2.686 3.706 1.31E+06 0.607
3.55 -7.098 18.60 2.530 3.674 1.32E+06 0.610
3.6 -7.489 17.19 2.373 3.622 1.32E+06 0.613
3.65 -7.657 16.20 2.265 3.576 1.32E+06 0.614
3.7 -7.723 14.94 2.133 3.503 1.3IE+06 0.614
3.75 -7.645 14.00 2.037 3.435 1.3IE+06 0.612
3.8 -7.448 12.93 1.933 3.344 1.29E+06 0.609
3.85 -7.236 12.16 1.860 3.270 1.28E+06 0.606
3.9 -6.989 11.48 1.796 3.196 1.26E+06 0.602
Table El·2 Continued (PbS).

eV 1::1 1::2 n k a (cm· 1) R
3.95 -6.753 lD.89 1.741 3.128 1.25E+06 0.597
4 -6.488 10.31 1.687 3.055 1.24E+06 0.592
4.05 -6.220 9.828 1.645 2.988 1.23E+06 0.587
4.1 -5.995 9.403 1.606 2.928 1.22E+06 0.582
4.15 -5.807 9.082 1.577 2.880 1.21E+06 0.578
4.2 -5.550 8.659 1.539 2.814 1.20E+06 0.571
4.25 -5.359 8.355 1.511 2.765 1.19E+06 0.567
4.3 -5.154 8.062 1.486 2.713 1.18E+06 0.561
4.35 -4.995 7.823 1.464 2.672 1.18E+06 0.557
4.4 -4.824 7.548 1.438 2.625 1.l7E+06 0.552
4.45 -4.692 7.389 1.425 2.593 1.l7E+06 0.548
4.5 -4.539 7.175 1.406 2.552 1.16E+06 0.543
4.55 -4.341 6.919 1.383 2.501 1.l5E+06 0.536
4.6 -4.240 6.811 1.375 2.476 1.15E+06 0.533
4.65 -4.107 6.668 1.365 2.443 1.l5E+06 0.528
4.7 -3.972 6.514 1.352 2.408 1.l5E+06 0.523
4.75 -3.855 6.386 1.342 2.378 1.l5E+06 0.518
4.8 -3.735 6.269 1.335 2.349 1.14E+06 0.513
4.85 -3.642 6.157 1.325 2.323 1.14E+06 0.509
4.9 -3.611 6.104 1.319 2.313 1.15E+06 0.508
4.95 -3.558 6.008 1.309 2.296 1.l5E+06 0.506
5 -3.541 5.939 1.299 2.286 1.l6E+06 0.506
5.05 -3.490 5.881 1.294 2.272 1.16E+06 0.504
5.1 -3.503 5.791 1.278 2.266 1.17E+06 0.505
5.15 -3.481 5.743 1.272 2.258 1.18E+06 0.504
5.2 -3.469 5.719 1.269 2.254 1.19E+06 0.504
5.25 -3.508 5.691 1.260 2.258 1.20E+06 0.506
5.3 -3.504 5.693 1.261 2.257 1.21E+06 0.506
37 0.043 1.60E+05
40 0.042 1.69E+05
45 0.054 2.48E+05
48 0.069 3.36E+05
50 0.070 3.57E+05
55 0.067 3.74E+05
60 0.061 3.74E+05
65 0.054 3.59E+05
70 0.046 3.25E+05
75 0.036 2.72E+05
80 0.027 2.23E+05
85 0.023 2.00E+05
90 0.020 1.82E+05
100 0.014 1.46E+05
110 O.OlD 1.l3E+05
120 0.0077 9.42E+04
130 0.0066 8.69E+04
140 0.0057 8.03E+04
150 0.0052 7.%E+04
E2 LEAD SELENIDE
(PbSe)

There has been considerable interest in lead-salt-type crystals (PbS, PbSe, and PbTe)
because they have a number of interesting physical properties as well as numerous po-
tential applications. The highest pulsed operation temperature of 282 K was reported
for a wavelength of 4.2 J.lm from a PbSe-based injection laser [1]. A comprehensive
review of the energy-band structures and some optical properties of the lead-salt-type
crystals has been carried out [2].
E2.2 ELECTRONIC ENEGY·BAND STRUCTURE

A number of calculations [3-6] and experiments [7] have given detailed information
about the electronic energy-band structure ofPbSe. We reproduce in Fig. E2-I the en-
ergy-band structure of PbSe as calculated with an EPM by Martinez et ai. [5]. The
electronic states are labeled with the use of a notation for the double-group representa-
tions. The locations of several interband transitions are included in the figure. These are
the transitions which may play an important part in the analysis of various optical-
constant spectra. Table E2-I lists the experimentally determined CP energies in PbSe
[8,9].
The valence-band maximum and the conduction-band minimum in PbSe occur at the
L point. Thus, this material has a direct band gap, Eo=Ec(L6-)-Ev(L/), at the L point.
The existence of a second, i.e., subsidiary, valence-band maximum on the l: axis is also
indicated [5]. The dominant fundamental reflectivity features observed in the spectral
region below -6 eV are the first shoulder, E 1, the highest peak in the reflectivity spec-
trum, E2 , and a high-energy shoulder on the main peak, E3 [9]. These transitions are
expected to take place at l: (E1), ~ (Ez), and ~ (E3 ), respectively (see Fig. E2-I). Re-
flectivity measurements reveal additional weak peaks, E4 , Es, and E6 , at energies higher
than 6 eV [8].
E2.3 OPTICAL CONSTANTS

Optical properties in the reststrahlen region of PbSe have been studied by Burkhard et
al. [10] and Amirtharaj et al. [11]. The crystals studied were a Bridgman-grown
cleaved sample (n-10 17 cm-3) [10] and ap-type PbSe film grown on NaCl (p=8.7xI017
cm-3) [11]. The data were analyzed using a single-classical-oscillator model including a
622
E2 LEAD SELENIDE (PbSe) 623
>-
(9
n:
w
z
w
-10
PbSe
-12
X K,U r
Figure E2·1 Electronic energy-band structure of PbSe as calculated with an EPM. (From Mar-
tinez et at. [5].)
TABLE E2·1 Energies of the CPs in the optical spectra of PbSe at 300 K.
CPs eV
Eo 0.31
E) 1.60
E2 2.73
E3 4.10
E4 7.1
E5 9.1
E6 12.5
Drude term. A set of the reststrahlen parameters obtained by Burkhard et al. [10] at 300
K were: 10,=203, 10_=23, ffiTQ=39 cm- I (ffiLQ=116 cm-I ), ')'=24 cm- I , ffi p=87 cm-I, and r=20
cm-I [see Eq. (2.14)]. These parameters are slightly different from those obtained by
Amirtharaj et al. [11]: 10,=212, 10_=23.4, ffiTQ=45 cm- I (ffiw=135 cm- I ), and ')'=19.6 cm-I .
Burkhard et al. [10] also reported the reststrahlen parameters at 77 and 5 K.
The refractive-index dispersion near the Eo edge of PbSe has been measured by sev-
eral authors [12-15]. The samples were epitaxially grown on alkali-halide and BaF2
substrates. The measured n data showed a clear peak near the Eo edge [12,14,15]. This
peak shifted to lower energies as the temperature increased. Note, however, that the n
values of Herman et al. [14,15] are considerably smaller than those reported by others
[12,13] (e.g., n-4.5 at E=O.2 eV and T=300 K [14,15], while n-5.1-5.2 at the same
energy and temperature [12,13]). The temperature-dependent n data were also reported
in Refs. [12-15] (see Fig. 5.26 in Sec. 5.2.3).
The fundamental absorption spectra near the Eo edge of PbSe have been studied both
theoretically [16] and experimentally [13,17,18]. The fundamental reflectivity spectra
in the interband transition region of PbSe have also been measured by several authors
[8,19,20]. The CPs observed in these studies were correlated with various electronic
transitions in the BZ [8,20]. By performing the KK analysis, the (n, k) values were ex-
tracted in Ref. [8].
The 300-K (101, fz) data for PbSe have been determined using SE in the 1J5-5.4-eV
spectral region by Suzuki and Adachi [9]. The PbSe single crystals used were grown by
the Bridgman method. These authors studied a chemical treatment method to obtain
PbSe surfaces of high quality, which should be useful for the preparation of surfaces for
optical measurements. The (£1' Ez) spectra taken on a best-prepared sample revealed
distinct structures at energies of the E), E2, and E3 CPs. The fz value at the E2 peak is
-34. Note that this value is much larger than that obtained from (n, k) of Cardona and
Greenaway (Ez=2nk-15) [8], indicating better surface quality of the former. Dielectric-
related optical constants of PbSe, such as the complex refractive index (n*=n+ik), ab-
sorption coefficient (a.), and normal-incidence reflectivity (R), were also reported [9].
The reflectivity spectra in the far-UV range (18-26 eV) of PbSe were measured us-
ing synchrotron radiation by Martinez et al. [21]. In this spectral range we can expect to
observe transitions from the cation core d-Ievels into the conduction-band states. Indeed,
several reflectivity peaks were identified and correlated with various core (Pb
5d)--conduction-band transitions.
We list in Table E2-2 the room-temperature values of c=cI+iEz, n*=n+ik, a, and R
for PbSe. A set of the optical constants for E:5:0.11 eV were calculated from the rest-
strahlen parameters of Burkhard et al. [lO] (n-10 17 cm-3). The Drude term was included
in the calculation. The real refractive indices n for 0.125::;£:5:0.475 eV were taken from
Zemel et al. [12]. The imaginary optical constants, k and a, for 0.3::;£:5:1.1 eV were
from Globus et al. [17]. A complete set of the optical constants for D-1.15 eV were
taken from Suzuki and Adachi [9].
The (CI' Ez), (n, k), a, and R values in Table E2-2 are plotted in Figs. E2-2-E2-5, re-
spectively. The vertical arrows in the figures indicate the positions of each CP. It has
been shown [9] that such optical-constant data can be successfully explained by the
MDF.
REFERENCES
1. Z. Shi, M. Tacke, A. Lambrecht, and H. Bottner, Appl. Phys. Lett. 66, 2537
(1995).
3. P. J. Lin and L. Kleinman, Phys_ Rev. 142,478 (1966).
Rev. B 8, 1477 (1973).
5. G. Martinez, M. SchlUter, and M. L. Cohen, Phys. Rev. B 11,651 (1975).
6. S.-H. Wei and A. Zunger, Phys. Rev. B 55, 13605 (1997).
7. G. Bauer and H. Krenn, in Handbook of Optical Constants of Solids, edited by E.
D. Palik (Academic, Orlando, 1985), p. 517.
9. N. Suzuki and S. Adachi,J. Appl. Phys. 77,1249 (1995).
10. H. Burkhard, R. Geick, P. Kastner, and K.-H. Unkelbach, Phys. Status Solidi B 63,
89 (1974).
11. P. M. Amirtharaj, B. L. Bean, and S. Perkowitz, f. Opt. Soc. Am. 67, 939 (1977).
12. J. N. Zemel, J. D. Jensen, and R. B. Schoolar, Phys. Rev. 140, A330 (1965).
13. M. Baleva, M. Maksimov, and M. Sendova, Infrared Phys. 27, 389 (1987).
14. K. H. Herrmann, V. Melzer, and U. Miiller, Infrared Phys. 34,117 (1993).
15. K. H. Herrmann and V. Melzer'/njrared Phys. Technol. 37,753 (1996).
16. H. Krenn, S. Yuan, N. Frank, and G. Bauer,Phys. Rev. B 57,2393 (1998).
17. T. R. Globus, A. O. Olesk, and S. A. Olesk, Sov. Phys. Semicond. 24,22 (1990).
18. A. N. Veis and N. A. Suvorova, Semicond. 30, lO89 (1996).
19. M. L. Belle, Sov. Phys.-Solid State 7, 480 (1965).
327 (1972).
21. G. Martinez, M. Schltiter, M. L. Cohen, R. Pinchaux, P. Thiry, D. Dagneaux, and

Y. Petroff, Solid State Commun.17, 5 (1975).
40.--.---.--~--,---~~
35
30 PbSe
25
20
15
10 1
5
o
-5
-10
-150
1 2 3 4 5 6
Photon energy (eV)
Figure E2-2 E1(E) and E2(E) spectra for PbSe at 300 K.
PbSe
k
2
n
1 !Eo
o 1 2 3 4 5 6
Photon energy (eV)
Figure E2-3 neE) and k(E) spectra for PbSe at 300 K.
PbSe
1~10_3 10-2 10-1 100 101

Photon energy (eV)
Figure E24 uJ.,E) spectrum for PbSe at 300 K.
0.7 ! E2 E3
!
0.6
II:
0.5
PbSe
0.4
0.30
1 2 3 4 5 6
Photon energy (eV)
Figure E2-S R(E) spectrum for PbSe at 300 K.
Table E2·2 Optical constants of PbSe at 300 K.

eV 101 102 n k a (cm· l ) R
0.001 -169.7 960.3 20.07 23.93 2.43E+03 0.921
0.002 -44.41 390.5 13.20 14.79 3.00E+03 0.874
0.0025 12.10 305.6 12.61 12.12 3.07E+03 0.848
0.003 56.16 278.4 13.04 10.67 3.25E+03 0.832
0.0035 77.93 292.6 13.80 10.60 3.76E+03 0.833
0.004 59.42 331.0 14.07 11.77 4.77E+03 0.846
0.0045 -9.77 354.3 13.13 13.50 6. 16E+03 0.862
0.005 -94.26 322.4 10.99 14.66 7.43E+03 0.877
0.006 -152.1 183.5 6.565 13.97 8.50E+03 0.896
0.007 -124.8 97.63 4.102 11.90 8.44E+03 0.902
0.008 -92.53 57.06 2.844 10.03 8. 14E+03 0.901
0.009 -67.98 36.41 2.137 8.518 7.77E+03 0.896
0.01 -50.11 24.82 1.704 7.281 7.38E+03 0.887
0.02 5.463 2.544 2.397 0.531 1.08E+03 0.189
0.03 15.27 0.729 3.909 0.093 2.84E+02 0.351
0.04 18.67 0.304 4.321 0.035 1.43E+02 0.390
0.05 20.23 0.155 4.498 0.017 8.73E+01 0.405
0.06 21.08 0.089 4.591 0.010 5.93E+01 0.413
0.07 21.59 0.056 4.646 0.0061 4.29E+01 0.417
0.08 21.92 4.682 0.420
0.09 22.15 4.706 0.422
0.1 22.31 4.723 0.423
0.11 22.43 4.736 0.424
0.125 22.5 4.74 0.425
0.15 22.8 4.77 0.427
0.175 23.0 4.8 0.429
0.2 23.3 4.83 0.432
0.225 23.6 4.86 0.434
0.25 24.1 4.91 0.438
0.275 24.9 4.99 0.444
0.285 25.7 5.07 0.450
0.3 25.3 1.06 5.03 0.105 3.20E+03 0.447
0.325 24.9 1.97 4.99 0.197 6.50E+03 0.444
0.35 24.5 2.38 4.96 0.24 8.50E+03 0.442
0.375 24.3 2.81 4.94 0.284 1.08E+04 0.441
0.4 24.0 2.91 4.91 0.296 1.20E+04 0.439
0.425 23.8 2.95 4.89 0.302 1.30E+04 0.438
0.45 23.8 2.89 4.89 0.296 1.35E+04 0.438
0.475 23.7 2.84 4.88 0.291 1.40E+04 0.437
0.5 0.286 1.45E+04
0.55 0.341 1.90E+04
0.6 0.353 2. 15E+04
0.7 0.395 2.80E+04
0.8 0.444 3.60E+04
0.9 0.493 4.50E+04
1 0.572 5.80E+04
1.1 0.646 7.20E+04
1.15 25.04 9.467 5.089 0.930 1.08E+05 0.464
1.175 25.19 9.728 5.108 0.952 1.13E+05 0.465
1.2 25.28 10.05 5.122 0.981 1.19E+05 0.467
Table E2·2 Continued (PbSe).

eV £1 ~ n k a (cm'I) R
1.25 25.23 10,63 5.129 1.037 1.31E+05 0.469
1.3 25.35 11.84 5.163 1.146 1.51E+05 0.474
1.35 25.49 12.59 5.192 1.212 1.66E+05 0.478
1.4 25.45 13.79 5.215 1.322 1.88E+05 0.483
1.45 25.20 15.30 5.229 1.463 2. 15E+05 0.489
1.5 24.56 16.52 5.204 1.587 2.4IE+05 0.492
1.55 23.58 17.90 5.156 1.736 2.73E+05 0.496
1.6 21.98 18.82 5.045 1.865 3.02E+05 0.496
1.65 21.10 18.62 4.962 1.876 3. 14E+05 0.492
1.7 20.48 18.47 4.902 1.884 3.25E+05 0.489
1.75 20.18 18.45 4.875 1.893 3.36E+05 0.488
1.8 20.17 18.59 4.879 1.905 3.48E+05 0.489
1.85 20.12 18.94 4.886 1.938 3.63E+05 0.491
1.9 20.16 19.49 4.909 1.985 3.828+05 0.495
1.95 20.12 20.19 4.931 2.048 4.05E+05 0.499
2 19.99 21.06 4.951 2.127 4.3IE+05 0.504
2.05 19.73 22.01 4.964 2.217 4.6IE+05 0.510
2.1 19.42 23.14 4.982 2.323 4.94E+05 0.516
2.15 18.95 24.29 4.988 2.435 5.31E+05 0.523
2.2 18.34 25.54 4.990 2.560 5.71E+05 0.530
2.25 17.51 26.87 4.979 2.699 6. 16E+05 0.537
2.3 16.52 28.12 4.956 2.836 6.61E+05 0.544
2.35 15.31 29.32 4.918 2.981 7.IOE+05 0.552
2.4 13.87 30.48 4.866 3.132 7.62E+05 0.560
2.45 12.30 31.38 4.796 3.271 8.12E+05 0.567
2.5 10.34 32.35 4.707 3.437 8.71E+05 0.576
2.55 8.090 32.99 4.586 3.597 9.30E+05 0.584
2.6 5.809 33.46 4.459 3.752 9.89E+05 0.593
2.65 3.411 33.51 4.307 3.890 1.05E+06 0.602
2.7 0.803 33.13 4.120 4.021 1.10E+06 0.611
2.75 -1.559 32.37 3.928 4.121 1.15E+06 0.619
2.8 -3.795 31.18 3.716 4.195 1.19E+06 0.627
2.85 -5.764 29.62 3.494 4.239 1.22E+06 0.634
2.9 -7.307 28.04 3.292 4.260 1.25E+06 0.640
2.95 -8.701 26.03 3.061 4.251 1.27E+06 0.646
3 -9.649 24.16 2.861 4.223 1.288+06 0.650
3.1 -10.66 20.53 2.497 4.111 1.29E+06 0.657
3.2 -10.75 17.40 2.203 3.949 1.28E+06 0.659
3.3 -10.19 14.75 1.967 3.749 1.25E+06 0.656
3.4 -9.441 12.87 1.805 3.564 1.23E+06 0.649
3.5 -8.644 11.40 1.682 3.387 1.2OE+06 0.640
3.6 -7.998 10.30 1.588 3.243 1.18E+06 0.631
3.7 -7.428 9.438 1.514 3.118 1.17E+06 0.622
3.8 -6.85 8.66 1.448 2.991 1.15E+06 0.612
3.9 -6.403 8.076 1.397 2.890 1.14E+06 0.604
4 -5.914 7.542 1.355 2.784 1.13E+06 0.592
4.1 -5.49 7.111 1.322 2.690 1.12E+06 0.581
4.2 -5.189 6.785 1.295 2.620 1.12E+06 0.573
4.3 -4.982 6.468 1.261 2.564 1.12E+06 0.568
4.4 -4.853 6.136 1.219 2.518 1.12E+06 0.567
Table E2·2 Continued (PbSe).

eV £1 £2 n k a (em· 1) R
4.5 ·4.689 5.769 1.172 2.462 1.12E+06 0.565
4.6 -4.498 5.399 1.125 2.401 1.12E+06 0.562
4.7 -4.281 5.057 1.083 2.335 1.11E+06 0.558
4.8 -4.047 4.727 1.043 2.266 1.10E+06 0.552
4.9 -3.851 4.488 1.016 2.210 1.l0E+06 0.546
5 -3.657 4.26 0.989 2.153 1.09E+06 0.539
5.1 -3.482 4.078 0.970 2.103 1.09E+06 0.533
5.2 -3.313 3.939 0.958 2.057 1.08E+06 0.525
5.3 -3.205 3.866 0.953 2.028 1.09E+06 0.519
5.4 -3.148 3.838 0.953 2.014 1.10E+06 0.516
E3 LEAD TELLURIDE
(PbTe)

Lead telluride (PbTe) is a polar semiconductor crystallizing in the rocksalt-type lattice.
It is known that the lead chalcogenides, PbS, PbSe, and PbTe, exhibit properties which
are unusual, and possibly unique, relative to other semiconductors. For example, they
possess high dielectric constant, high mobility, and narrow fundamental gaps whose
temperature coefficient is positive [1]. These materials have been the subject of many
research efforts, due to the technical importance for use in a variety of infrared optoe-
lectronic device applications. Very low threshold-current laser diodes have been re-
cently demonstrated in single quantum wells based on the PbTe/PbEuTeSe lattice-
matched heterojunction system [2].

Figure E3-1 reproduces the energy-band structure of PbTe as calculated with an EPM
by Kohn et al. [3]. The electronic states are labeled with the use of a notation for the
double-group representations. The locations of several interband transitions are includ-
ed in the figure. These are the transitions which may play an important part in the ana-
lysis of various optical spectra. Table E3-1 lists the experimentally determined CP en-
ergies in PbTe [4,5].
The valence-band maximum and the conduction-band minimum in PbTe occur at the
L point. PbTe has, thus, a direct band gap, Eo=Ec(L 6-)-EvCL/)-0.3 eV, at the L point.
The existence of a second, i.e., subsidiary, valence-band maximum on the:E axis is also
indicated [3]. However, it is not yet certain whether this is an absolute maximum or a
saddle point in which the energy of the valence band increases in directions perpen-
dicular to the :E axis.
The dominant fundamental reflectivity features observed in PbTe below -5 e V are
the first shoulder, E1, the highest peak in the reflectivity spectrum, E2 , and a high-
energy shoulder on the main peak, E3 [5]. These transitions are expected to take place at
:E (:Es-7:Es, E 1-1.1 eV), .1. (~-7D.6' E2-2.0 eV), and D. (.1.7-7.1.6, E3-3.3 eV), respectively.
Reflectivity measurements reveal additional weak peaks, E4 , E s, and E 6 , at energies
higher than 5 eV [4].
631
c:I'I
~
N
12
L;'l-
- 6
E (eV) PbTe l, +
X'6 l6
8
~. r;
17
~_ 6
,-.
r6-
0
rl-
K,
r-6
K'r---4
Xi A:'C~
A.
K,~
X,
-. X-
•
~
r;~ X'6
--..:::L. ---t K, t--- [).. ~r:t ~ iL:
-8
~
......
VJ
:.~t t. - 6, jr:t A.
jK.tj X: t + ~
r K K X X r r r5
~
Figure E3-1 Electronic energy-band suucture of PbTe as calculated with an EPM. (From Kohn R
et al. [3].)
~
VJ
E3 LEAD TELLURIDE (PbTe) 633
TABLE E3·1 Energies of the CPs in the optical spectra ofPbTe at 300 K.
CPs eV
0.32
1.08
2.02
3.25
6.3
7.8
11.2

The static dielectric constant e, reported for PbTe falls in the range 380-416 at 300 K,
while at low temperntures (T~77 K) it exceeds 1000 (see Refs. [6,7]). Values of the
optical dielectric constant e.. determined from the refractive-index measurements were
33,37, and 39 at T=300, 80, and 6 K, respectively [8].
IR lattice reflection spectra of PbTe were measured by several authors [9-12]. Sin-
gle-crystalline bulk as well as epitaxial films were used in these measurements. Bauer
and Krenn [13] compiled these works and reported the following 300-K reststrahlen
parameters: e.=400±20, e..=32.8, IDTO=32 cm'l, y=10 cm,l, IDp=230.5 cm,l, and r=30
cm'l. The plasma pammeters IDp and r [see Eq. (2.14)] correspond to those for n=10 18
cm·3. The plasma reflection in PbTe has also been discussed by Dixon and Riedl [14]
for p=3.5x1018-4.8x1019 cm,3 at temperntures from 24 to 300 K. Studies of the magne-
toplasma reflection in PbTe were also carried out by severnl authors [15-17]. Strong
temperature dependence of e. indicated the inherent tendency of the lattice to undergo a
structural phase transition [15,16].
Optical absorption spectra were measured in the wavelength rnnge below [18,19] and
at the fundamental absorption edge [20-3]. The intervalence-band absorption peaking
at 'N=6-7.5Ilffi at T=195-300 K was identified inp-type PbTe [18]. It was also found
that p-PbTe films grown on BaF2 substrates show significantly lower below-band-gap
optical absorption as compared with films grown on NaCl [19]. Studies in Refs. [20-2]
demonstrate the sensitivity afforded optical absorption measurements in determining
the lowest-direct-absorption edge at various temperatures.
The refractive-index dispersion near the Eo edge of PbTe has been measured by a
number of authors [21-5]. The high accurncy of the measurement 0.1 % was achieved
in Ref. [25]. The experimental n data showed a peak near the Eo edge (-0.32 eV at 300
K). This peak shifted to lower energies as the temperature increased due to the positive
temperature coefficient of Eo (dEoIdT>O). The n values from the liternture [21,22,24]
agree within ±OJ (see Ref. [22]). The temperature-dependent n data were also reported
in Refs. [21,23-5] (see Fig. 5.26 in Sec. 5.2.3).
The fundamental reflectivity in the interband transition region of PbTe has been
measured by a number of authors [3,4,26-8]. Measurements were performed on bulk
samples [3,4,26,28] and epitaxial layers deposited on KCI [27]. By performing the KK
analysis, the (n, k) or (£1' Ea) values were extracted [3.4,28]. The CPs observed in these
studies were correlated with various electronic transitions in the BZ [3.4,27,28].
SE study has been carried out by Suzuki and Adachi [5]. They developed a polishing
method to obtain PbTe surfaces of high quality, which should be useful for the prepa-
ration of surfaces for optical measurements. They measured the SE data on a best-
prepared sample in the 1.1-5.4-eV spectral region.
We can fmd systematic differences between the data of Suzuki and Adachi [5], who
used a chemomechanically polished sample, and those obtained by Cardona and Gre-
enaway [3], who used a cleaved bulk material, or by Kom and Braunstein [28], who
worked on a polished and electrochemically etched sample. The Ea values at the E2 peak
derived from the reflectivity measurements at 300 K are much smaller (-20, Ref. [3])
or, conversely, larger (-64, Ref. [28]) than the SE result (-50, Ref. [5]). The "biggest is
best" criterion [29,30], if we adopt, suggests that the sample with the cleanest surface is
that of Kom and Braunstein [28]. Unfortunately, these authors did not present details of
their used sample preparation technique. Although various surface chemical treatments
were tried in Ref. [5], no such a large Ea(E~ value was achieved in SE measurements.
Optical absorption spectra in the vacuum-UVregion (36-150 eV) of some II-VI and
IV-VI compounds, including PbTe, have been reported by Cardona and Haensel [31].
The film used by these authors was obtained by vacuum evaporation on a noncrystalli-
ne substrate, and thus it was polycrystalline. The measured a(E) spectrum showed a
broad peak at E-80 eV.
The reflectivity spectra in the far-UV range (18-26 eV) ofPbTe were studied using
synchrotron radiation by Martinez et al. [32]. Several reflectivity peaks were identified
and correlated with various core (Pb 5d)-conduction-band transitions.
Table E3-2 lists the room-temperature values of e=el+iEa, n*=n+ik, a, and R for
PbTe. A complete set of the optical constants for E~O.1 eV were calculated from the
reststrahlen parameters of Bauer and Krenn (n=1018 cm-3, Ref. [13]). The n values for
0.15g~.6 eV were taken from Globus et al. [22]. The k and a for 0.15g~.3 eV
were taken from Riedl (n=2.5xlO18 cm-l, Ref. [18]) and those for 0.31g~0.6 eV from
Globus et al. [22]. The optical-constant data in the interband transition region were ta-
ken for 0.8g~1.0 eV from Kom and Braunstein [28] and for 1.13g~5.4 eV from Su-
zuki and Adachi [5]. The optical absorption data, k and a, for ~30 eV were taken
from Cardona and Haensel [31].
The (£1' £0, (n, k), a, and R values in Table E3-2 are plotted in Figs. E3-2-E3-5, re-
spectively. The vertical arrows in the figures indicate the positions of each CP. It has
been shown [5] that such optical spectra can be successfully explained by the MDF.
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29. D. E. Aspnes,J. Vac. Sci. Technol.17, 1057 (1980).
30. D. E. Aspnes and A. A. Studna, Appl. Phys. Lett. 39,316 (1981).
32. G. Martinez, M. Schliiter, M. L. Cohen, R. Pinchaux, P. Thiry, D. Dagneaux, and
Y. Petroff, Solid State Commun. 17,5 (1975).
60
50 PbTe
o
-10
-20
0~~1--~2---3L--4L-~5--~6
Photon energy (eV)

Figure E3-2 £1(E) and £2(E) spectra for PbTe at 300 K.
8
7
PbTe
6
5
~
c: 4 E1
3 !
k
2
Eo
1 ! n
0 1 2 3 4 5 6
Photon energy (eV)
Figure E3-3 n(E) and k(E) spectra for PbTe at 300 K.
107
106
~ 105
CAITO
I
E !
.2. 104
~
103
PbTe
1~10_3 10-2 10-1 100 101 102

Photon energy (eV)
Figure EJ-4 a1..E) spectrum for PbTe at 300 K.
0.8 r---r---,---r---r------.-----.
0.7
a:
0.6
0.5
PbTe
0.40~~1--!:2--3L----L4-...l5--.J6
Photon energy (eV)

Figure E3-S R(E) spectrum for PbTe at 300 K.
Table E3-2 Optical constants of PbTe at 300 K.

eV £1 Ez n k a (em-I) R
0.001 -1383 6746 52.46 64.30 6.52E+03 0.970
0.0015 -1212 4186 39.66 52.77 8.02E+03 0.964
0.002 -997.5 2891 32.10 45.03 9. 13E+03 0.959
0.0025 -750.1 2163 27.74 38.98 9.88E+03 0.953
0.003 -482.4 1817 26.43 34.37 1.05E+04 0.945
0.0035 -343.7 1900 28.17 33.73 1.20E+04 0.943
0.004 -927.4 1996 25.24 39.55 1.60E+04 0.955
0.0045 -1259 1275 16.32 39.06 1.78E+04 0.964
0.00475 -1188 994.2 13.44 36.99 1.78E+04 0.966
0.005 -1087 800.8 11.47 34.91 1.77E+04 0.967
0.00525 -988.9 664.3 10.06 33.02 1.76E+04 0.967
0.0055 -900.6 563.7 8.997 31.33 1.75E+04 0.967
0.00575 -823.2 486.5 8.154 29.83 1.74E+04 0.966
0.006 -755.7 425.1 7.463 28.48 1.73E+04 0.966
0.0065 -644.0 333.7 6.376 26.17 1.72E+04 0.965
0.007 -555.9 268.7 5.548 24.22 1.72E+04 0.965
0.0075 -484.6 220.5 4.888 22.55 1.71E+04 0.964
0.008 -426.0 183.5 4.349 21.09 1.71E+04 0.963
0.0085 -377.0 154.5 3.900 19.80 1.71E+04 0.963
0.009 -335.5 131.3 3.521 18.65 1.70E+04 0.962
0.0095 -300.0 112.6 3.197 17.61 1.70E+04 0.961
0.Q1 -269.5 97.32 2.918 16.67 1.69E+04 0.960
0.012 -181.3 57.71 2.117 13.63 1.66E+04 0.957
0.014 -126.5 36.94 1.625 11.37 1.61E+04 0.952
0.016 -90.29 25.03 1.305 9.591 1.56E+04 0.946
0.Q18 -65.08 17.72 1.088 8.140 1.49E+04 0.938
0.02 -46.86 12.99 0.940 6.910 1.40E+04 0.927
0.022 -33.27 9.805 0.841 5.829 1.30E+04 0.910
0.024 -22.87 7.578 0.782 4.845 1.18E+04 0.883
0.026 -14.73 5.976 0.763 3.914 1.03E+04 0.834
0.Q28 -8.257 4.795 0.804 2.984 8.47E+03 0.736
0.03 -3.015 3.905 0.979 1.994 6.06E+03 0.504
0.032 1.285 3.222 1.542 1.045 3.39E+03 0.183
0.034 4.857 2.690 2.281 0.589 2.03E+03 0.179
0.036 7.856 2.268 2.831 0.401 1.46E+03 0.237
0.038 10.40 1.930 3.238 0.298 1.15E+03 0.282
0.04 12.57 1.656 3.553 0.233 9.45E+02 0.316
0.05 19.83 0.850 4.454 0.095 4.84E+02 0.401
0.06 23.78 0.493 4.877 0.050 3.07E+02 0.435
0.07 26.17 0.310 5.116 0.030 2. 15E+02 0.453
0.08 27.72 0.208 5.265 0.020 1.60E+02 0.463
0.09 28.79 0.146 5.365 0.014 1.24E+02 0.470
0.1 29.55 0.107 5.436 0.010 9.94E+01 0.475
0.15 33.01 0.054 5.75 0.0047 7.lOE+01 0.495
0.2 33.57 0.023 5.79 0.0020 4.00E+01 0.498
0.25 34.15 0.015 5.84 0.0013 3.20E+01 0.501
0.3 35.38 0.020 5.95 0.0016 5.00E+01 0.507
0.31 35.89 0.10 5.99 0.0084 2.65E+02 0.510
0.32 36.70 0.54 6.06 0.045 1.45E+03 0.514
0.33 38.11 1.66 6.18 0.135 4.50E+03 0.520
Table E3-2 Continued (PbTe).
eV el ~ n k a (em-I) R
0.34 38.21 2.55 6.19 0.206 7.lOE+03 0.521
0.36 37.74 3.57 6.15 0.290 1.06E+04 0.520
0.38 37.41 4.17 6.13 0.340 1.3IE+04 0.519
0.4 37.08 4.54 6.10 0.372 1.5IE+04 0.517
0.45 36.58 5.32 6.06 0.438 2.00E+04 0.516
0.5 36.67 6.23 6.08 0.513 2.60E+04 0.517
0.55 36.81 6.22 6.09 0.511 2.85E+04 0.518
0.6 37.09 6.43 6.11 0.526 3.20E+04 0.519
0.8 41.17 13.52 6.500 1.040 8.44E+04 0.546
1 45.76 25.20 7.000 1.800 1.82E+05 0.584
1.13 41.50 29.51 6.798 2.171 2.49E+05 0.585
1.15 40.36 31.19 6.759 2.308 2.69E+05 0.587
1.175 38.28 32.81 6.659 2.463 2.93E+05 0.588
1.2 35.93 34.13 6.538 2.610 3.18E+05 0.589
1.25 31.37 34.29 6.239 2.748 3.48E+05 0.584
1.3 29.17 33.94 6.079 2.791 3.68E+05 0.580
1.35 27.81 33.49 5.972 2.804 3.84E+05 0.577
1.4 26.95 33.60 5.917 2.839 4.03E+05 0.577
1.45 26.13 34.06 5.876 2.898 4.26E+05 0.578
1.5 25.47 34.68 5.852 2.%3 4.5IE+05 0.580
1.55 24.74 35.97 5.848 3.076 4.83E+05 0.585
1.6 23.91 37.63 5.852 3.215 5.22E+05 0.591
1.65 22.62 39.68 5.844 3.395 5.68E+05 0.600
1.7 21.07 41.55 5.816 3.572 6. 16E+05 0.607
1.75 19.47 43.54 5.795 3.757 6.66E+05 0.615
1.8 16.82 45.73 5.725 3.994 7.29E+05 0.626
1.85 13.67 47.64 5.622 4.236 7.95E+05 0.636
1.9 10.11 49.32 5.498 4.485 8.64E+05 0.647
1.95 5.442 50.04 5.281 4.738 9.37E+05 0.659
2 0.376 49.99 5.018 4.980 1.0IE+06 0.671
2.05 -4.616 48.89 4.717 5.183 1.08E+06 0.683
2.1 -9.647 46.41 4.345 5.341 1.14E+06 0.696
2.15 -13.54 42.% 3.%9 5.412 1.18E+06 0.706
2.2 -16.26 38.86 3.5% 5.403 1.2IE+06 0.714
2.25 -18.17 34.43 3.222 5.343 1.22E+06 0.722
2.3 -18.86 30.66 2.927 5.237 1.22E+06 0.727
2.35 -18.% 27.19 2.664 5.104 1.22E+06 0.730
2.4 -18.46 24.14 2.442 4.942 1.20E+06 0.731
2.45 -17.62 21.31 2.240 4.758 1.18E+06 0.730
2.5 -16.86 19.40 2.102 4.613 l.17E+06 0.728
2.55 -15.91 17.50 1.967 4.447 l.15E+06 0.725
2.6 -15.01 16.05 1.866 4.300 1.13E+06 0.720
2.65 -14.24 14.89 1.784 4.174 1.12E+06 0.717
2.7 -13.38 13.75 1.704 4.035 1.10E+06 0.711
2.75 -12.69 12.92 1.646 3.923 1.09E+06 0.706
2.8 -12.02 12.18 1.596 3.816 1.08E+06 0.700
2.85 -11.38 11.51 1.550 3.712 1.07E+06 0.694
2.9 -10.82 10.98 1.515 3.622 1.06E+06 0.688
2.95 -10.22 10.45 1.482 3.524 1.05E+06 0.681
3 -9.735 10.05 1.458 3.444 1.05E+06 0.674
Table E3-2 Continued (PbTe).

eV £1 £2 n k a (cm· 1) R
3.05 -9.333 9.729 1.440 3.377 1.04E+06 0.668
3.1 -8.891 9.398 1.422 3.304 1.04E+06 0.661
3.15 -8.593 9.141 1.406 3.251 1.04E+06 0.656
3.2 -8.358 8.913 1.389 3.208 1.04E+06 0.653
3.25 -8.193 8.662 1.366 3.171 1.04E+06 0.651
3.3 -8.032 8.321 1.329 3.130 1.05E+06 0.651
3.35 -7.897 7.948 1.286 3.090 1.05E+06 0.652
3.4 -7.766 7.611 1.247 3.053 1.05E+06 0.653
3.45 -7.57 7.204 1.200 3.002 1.05E+06 0.653
3.5 -7.379 6.855 1.160 2.954 1.05E+06 0.653
3.6 -6.938 6.221 1.091 2.851 1.04E+06 0.651
3.7 -6.525 5.713 1.036 2.757 1.03E+06 0.647
3.8 -6.089 5.214 0.982 2.656 1.02E+06 0.642
3.9 -5.699 4.813 0.938 2.565 1.0IE+06 0.637
4 -5.301 4.437 0.898 2.471 1.ooE+06 0.630
4.1 -4.88 4.075 0.860 2.370 9.85E+05 0.621
4.2 -4.492 3.785 0.831 2.277 9.69E+05 0.610
4.3 -4.111 3.518 0.806 2.182 9.51E+05 0.598
4.4 -3.805 3.322 0.789 2.104 9.39E+05 0.586
4.5 -3.491 3.145 0.777 2.024 9.23E+05 0.571
4.6 -3.191 2.993 0.769 1.945 9.07E+05 0.555
4.7 -2.905 2.866 0.767 1.869 8.9IE+05 0.536
4.8 -2.643 2.766 0.769 1.798 8.75E+05 0.517
4.9 -2.435 2.693 0.773 1.741 8.65E+05 0.499
5 -2.228 2.633 0.781 1.685 8.54E+05 0.480
5.1 -2.043 2.601 0.795 1.636 8.46E+05 0.461
5.2 -1.877 2.599 0.815 1.594 8.40E+05 0.441
5.3 -1.786 2.654 0.841 1.579 8.48E+05 0.428
5.4 -1.772 2.779 0.873 1.592 8.71E+05 0.422
30 0.077 2.35E+05
40 0.068 2.76E+05
50 0.068 3.47E+05
60 0.069 4. 17E+05
70 0.067 4.74E+05
75 0.065 4.9IE+05
80 0.061 4.94E+05
85 0.057 4.92E+05
90 0.053 4.84E+05
95 0.048 4.64E+05
100 0.042 4.22E+05
105 0.034 3.61E+05
110 0.024 2.67E+05
120 0.013 1.58E+05
130 0.0074 9.72E+04
140 0.0042 6.00E+04
150 0.0024 3.61E+04
E4 TIN TELLURIDE
(SnTe)

The lead chalcogenides, PbS, PbSe, and PbTe, crystallize in the rocksalt structure,
while in tin telluride (SnTe) a ferroelectric phase transition from a rocksalt structure (13-
SnTe) to a rhombohedral structure really occurs. The rocksalt structure is stable above
-100 K. SnTe always behaves as a heavily doped p-type semiconductor. Because of its
narrow band gap, SnTe is useful for IR optical devices.

Figure E4-1 reproduces the energy-band structure of SnTe as calculated with an EPM
by Tung and Cohen [1]. The electronic states are labeled with the use of a notation for
the double-group representations. The locations of several interband transitions are in-
cluded in the figure. These are the transitions which may play an important part in the
analysis of various optical spectra. Table E4-1 lists the experimental CP energies in
SnTe [2,3].
The band structure of SnTe resembles that of PbTe throughout the BZ except at and
near the L point. The valence-band maximum and the conduction-band minimum in
SnTe occur at or near the L point. SnTe thus has a direct band gap,
Eo=Ec(Lt)-E.(L6-)-0.2 eV, at the L point. The lowest band gap in PbTe also occurs at
the L point, but the symmetries of its band extrema are reversed [Le.,
Eo=Ec(L6-)-Ev(L6+)].
Pairs of bands which remain nearly parallel throughout a significant volume of the
BZ give rise to peaks and shoulders in the observed reflectivity spectrum at the appro-
priate photon energy. The dominant fundamental reflectivity features observed in SnTe
below -5 eV are the first shoulder, E 1 , the highest peak in the reflectivity spectrum, E2 ,
and a high-energy shoulder on the main peak, E3 [3]. These transitions are expected to
take place at L (Ls~Ls, E 1-1.2 eV), t1 (t16~t16' E 2-1.7 eV), and t1 (t17~~' E 3-2.5 eV),
respectively. Reflectivity measurements reveal additional weak peaks, E4 , Es, and E6 , at
energies higher than 5 eV [2].

The static dielectric constant ts for SnTe is 380 at 300 K (see Ref. [4]). Room-
temperature value of the optical dielectric constant t~ reported falls in the range 40-64
641
C'I
~
12r,--------------------,
E leV) x+,
8 x;
r+r+
r;7. ~ ._ ~X~!;~
ri Is
r-,
t -t x;
0
r-a
r-, x; A,
x-,
-4 X-6
r:LI, x', A,
~"'---
~L:
-8
A. A. ....~
>, til
~~:t
r
]"'0 X: t
K K X x
yt
r r
l
L
~
R
Figure E4-1 Electronic energy-band structure of SnTe as calculated with an EPM. (From Tung ~
and Cohen [1].) ~
~
til
E4 TIN TELLURIDE (SnTe) 643
TABLE E4·1 Energies of the CPs in the optical spectra ofSnTe at 300 K.
CPs eV
Eo -0.2
E) 1.20
E2 1.69
E3 2.45
E4 6.1
E5 7.4
E6 9.1
[S-9].
IR optical properties of SnTe have been studied in the wavelength range 1-100 11m
by Riedl et al. [6], in the range I-IS 11m by Bis and Dixon [9], and in the range
200-4000 cm') by Siapkas et al. [10]. The IR optical spectra were taken on p-type bulk
samples [6,9] and on epitaxial films grown on alkali-halide substrates [6,9,10]. The
optical constants, n, k, a, and R, were deduced from interference extrema in the reflec-
tance and transmittance spectra of SnTe [10]. However, no fit study of the IR optical
spectra using a classical oscillator model has been made so far on SnTe. No detailed
information is, thus, available on the reststrahlen parameters of this material.
Optical spectra from a classical free-carrier absorption region up to 3.8 eV have been
studied by Schoolar and Dixon [7]. The refractive indices and absorption coefficients
were determined from the analysis of normal reflectance and transmittance (T) meas-
urements on epitaxial films ranging in carrier concentration from p=3.6xl0 19 to
6.8xlOz0 cm·3 • The error of R and T was estimated to be less than ±3%. Temperature
dependence of the refractive index and absorption coefficient of p-SnTe has also been
studied at 12, 77, and 300 K on epitaxial film with a hole concentration of3.6x10 19 cm·3
[8]. The 300-K data are in good agreement with those obtained by Schoolar and Dixon
[7].
The fundamental reflectivity in the interband transition region of SnTe has been
measured by Cardona and Greenaway [2] and Kom and Braunstein [11]. Cleaved SnTe
sample was used below 6 eV and an "as-grown" epitaxial layer in the vacuum-UV re-
gion [2]. In Ref. [11], samples were cut from a Czochralski-grown SnTe ingot, ground,
hand polished, and finally electrochemically etched to produce optical quality surfaces.
By performing the KK analysis, these authors extracted the (n, k) and (£1' Ez) values.
The CPs found in these optical spectra were also correlated with various electronic
transitions in the BZ.
A set of the optical constants for SnTe at room temperature have been determined
using SE in the 1.13-S.5-eV spectral region by Suzuki and Adachi [3]. The SE meas-
urements were made on a bulk sample grown by the Bridgman method. The best SE
spectra were obtained for a sample chemomechanically polished with a solution of Br2
in methanol. These spectra revealed distinct structures at energies of the E1, Ez, and E3
CPs. The Ez value at the Ez peak measured by SE was -S7 [3]. Note that this value is
much larger than those of Cardona and Greenaway (~-37) [2] and of Kom and Braun-
stein (~-53) [11], indicating higher surface quality of the sample used in the SE meas-
urements.
Optical absorption in the 2-120-eV region of SnTe has been measured using syn-
chrotron radiation at 80 K by Fukui et al. [12]. The absorption spectra both in the crys-
talline and amorphous phases were obtained. The Sn 4d and Te 4d core levels were
identified at -26 and 42 eV, respectively. However, only the optical density was deter-
mined in this study.
We list in Table E4-2 the 300-K values of E=EI+i~, n*=n+ik, IX, and R for SnTe. A
set of the optical constants for £:5;1 eV were taken from Burke and Riedl (p=3.6x10 19
cm-3 , Ref. [8]). The optical constants in the range between 1.13 and 5.5 eV correspond
to those of Suzuki and Adachi [3].
The (E I, ~, (n, k), IX, and R values in Table E4-2 are graphed in Figs. E4-2-E4-5,
MDF.
REFERENCES
1. Y. W. Tung and M. L. Cohen, Phys. Rev. 180, 823 (1969).

3. N. Suzuki and S. Adachi, lpn. l. Appl. Phys. 34, 5977 (1995).
4. H. Lehmann, G. Nimtz, L. D. Haas, and T. Jakobus, Appl. Phys. 25, 291 (1981).
5. M. Cardona, l. Appl. Phys. 36, 2181 (1965).
6. H. R. Riedl, J. R. Dixon, and R. B. Schoolar, Phys. Rev. 162, 692 (1967).
7. R. B. Schoolar and J. R. Dixon, l. Opt. Soc. Am. 58, 119 (1968).
8. J. R. Burke, Jr. and H. R. Riedl, Phys. Rev. 184,830 (1969).
9. R. F. Bis and J. R. Dixon, Phys. Rev. B 2,1004 (1970).
10. D. Siapkas, D. B. Kushev, N. N. Zheleva, J. Siapkas, and I. Lelidis, Infrared Phys.
31,425 (1991).
11. D. M. Kom and R. Braunstein, Phys. Rev. B 5,4837 (1972).
12. K. Fukui, J. Yamazaki, T. Saito, S. Kondo, and M. Watanabe, l. Phys. Soc. Jpn 56,
4196 (1987).
70.--.---.--.---.-~---,
60
50 SnTe
40 "1,
,,
30 ,
,
w 20 :
,,
10 ,
v'
o
-10
-20 L -__ __ __ __
o
L-~~~ ~ ~ ~
1 2 3 4 5 6
Photon energy (eV)
Figure E4-2 E1(E) and ElE) spectra for SnTe at 300 K.
5 6
Photon energy (eV)
Figure E4-3 n(E) and k(E) spectra for SnTe at 300 K.
SnTe
10°
Photon energy (eV)
Figure E4-4 aJ..E) spectrum for SnTe at 300 K.
0.9
0.8
Ell
! E2 !E3
0.7 tEo
0.6
0.5
a:
0.4
0.3
SnTe
0.2
0.1
0 1 2 4 3 5 6
Photon energy (eV)
Figure E4-5 R(E) spectrum for SnTe at 300 K.
Table E4·2 Optical constants ojSnTe at 300 K.
eV EI E2 n k a (cm· l ) R
0.142 11.8 4.6 3.5 0.66 9.50E+03 0.323
0.163 21.9 3.8 4.7 0.41 6.70E+03 0.424
0.188 29.1 3.0 5.4 0.28 5.30E+03 0.474
0.214 34.8 2.3 5.9 0.20 4.30E+03 0.505
0.248 37.2 1.8 6.1 0.15 3.80E+03 0.516
0.275 39.7 1.6 6.3 0.13 3.60E+03 0.527
0.306 42.2 1.5 6.5 0.11 3.50E+03 0.538
0.335 44.9 1.5 6.7 0.11 3.80E+03 0.548
0.362 47.6 2.1 6.9 0.15 5.60E+03 0.558
0.395 49.0 3.0 7.0 0.21 8.60E+03 0.563
0.419 51.8 3.8 7.2 0.27 1.13E+04 0.572
0.5 0.47 2.36E+04
0.6 0.69 4.20E+04
0.7 0.96 6.80E+04
0.8 1.36 1.10E+05
0.9 1.75 1.60E+05
1 2.17 2.20E+05
1.13 43.08 42.28 7.192 2.939 3.37E+05 0.620
1.15 42.09 43.49 7.163 3.036 3.54E+05 0.622
1.2 39.04 46.48 7.062 3.291 4.00E+05 0.627
1.25 35.59 48.78 6.927 3.521 4.46E+05 0.632
1.3 32.32 51.27 6.817 3.761 4.96E+05 0.638
1.35 28.99 53.20 6.692 3.975 5.44E+05 0.643
1.4 25.18 55.D1 6.545 4.202 5.96E+05 0.649
1.5 16.76 57.22 6.180 4.630 7.04E+05 0.661
1.55 11.98 57.34 5.940 4.827 7.58E+05 0.667
1.6 7.072 57.00 5.679 5.018 8. 14E+05 0.675
1.65 3.056 56.27 5.450 5.162 8.64E+05 0.681
1.7 -2.289 54.95 5.134 5.352 9.22E+05 0.690
1.75 -6.45 52.69 4.829 5.456 9.68E+05 0.697
1.8 -10.47 50.D1 4.507 5.548 1.0IE+06 0.705
1.85 -13.82 46.47 4.163 5.581 1.05E+06 0.712
1.95 -17.89 38.75 3.521 5.503 1.09E+06 0.722
2 -18.60 34.54 3.211 5.377 1.09E+06 0.725
2.05 -18.64 30.96 2.958 5.233 1.09E+06 0.725
2.1 -18.12 27.67 2.735 5.060 1.08E+06 0.723
2.15 -17.38 25.16 2.569 4.897 1.07E+06 0.720
2.2 -16.50 23.10 2.438 4.737 1.06E+06 0.715
2.25 -15.55 21.32 2.328 4.579 1.04E+06 0.709
2.3 -14.71 20.02 2.251 4.447 1.04E+06 0.703
2.35 -13.90 18.98 2.194 4.326 1.03E+06 0.696
2.4 -13.29 18.17 2.148 4.231 1.03E+06 0.691
2.45 -12.64 17.35 2.101 4.130 1.03E+06 0.685
2.5 -12.25 16.79 2.065 4.064 1.03E+06 0.681
2.55 -11.93 16.13 2.016 3.999 1.03E+06 0.679
2.6 -11.70 15.47 1.962 3.943 1.04E+06 0.677
2.65 -11.50 14.83 1.906 3.890 1.05E+06 0.677
2.7 -11.28 14.15 1.847 3.833 1.05E+06 0.676
2.75 -11.11 13.58 1.793 3.786 1.06E+06 0.676
2.8 -10.93 12.97 1.736 3.734 1.06E+06 0.676
Table E4-2 Continued (SnTe).

eV £1 £2 n k a (cm· l ) R
2.85 -10.76 12.40 1.682 3.687 1.07E+06 0.676
2.9 -10.59 11.85 1.629 3.639 1.07E+06 0.677
2.95 -10.38 11.21 1.564 3.582 1.07E+06 0.678
3 -10.20 10.65 1.508 3.531 1.07E+06 0.678
3.1 -9.769 9.597 1.401 3.425 1.08E+06 0.680
3.2 -9.232 8.608 1.302 3.306 1.07E+06 0.679
3.3 -8.732 7.731 1.210 3.193 1.07E+06 0.679
3.4 -8.161 6.982 1.136 3.074 1.06E+06 0.676
3.5 -7.576 6.323 1.070 2.953 1.05E+06 0.671
3.6 -7.040 5.789 1.018 2.842 1.04E+06 0.665
3.7 -6.562 5.343 0.975 2.741 1.03E+06 0.658
3.8 -6.08 4.937 0.936 2.637 1.02E+06 0.650
3.9 -5.628 4.597 0.905 2.539 1.ooE+06 0.641
4 -5.197 4.292 0.878 2.443 9.91E+05 0.630
4.1 -4.753 4.004 0.855 2.342 9.73E+05 0.617
4.2 -4.380 3.788 0.840 2.255 9.6OE+05 0.603
4.3 -4.007 3.560 0.822 2.164 9.43E+05 0.589
4.4 -3.719 3.398 0.812 2.092 9.33E+05 0.576
4.5 -3.421 3.241 0.804 2.017 9.20E+05 0.561
4.6 -3.129 3.099 0.798 1.941 9.05E+05 0.544
4.7 -2.838 2.983 0.800 1.865 8.89E+05 0.524
4.8 -2.554 2.900 0.809 1.791 8.72E+05 0.501
4.9 -2.321 2.852 0.823 1.732 8.6OE+05 0.479
5 -2.088 2.834 0.846 1.675 8.49E+05 0.455
5.1 -1.876 2.845 0.875 1.625 8.4OE+05 0.432
5.2 -1.708 2.905 0.912 1.593 8.40E+05 0.411
5.3 -1.607 3.004 0.949 1.583 8.51E+05 0.398
5.4 -1.586 3.174 0.991 1.602 8.77E+05 0.393
5.5 -1.733 3.512 1.045 1.681 9.37E+05 0.403
E5 LEAD TIN SELENIDE
(Pb1_~n~e)
ES.l GENERAL REMARKS

Since PbSe has the cubic rocksalt structure whereas SnSe has the orthorhombic struc-
ture, these compounds do not form a complete series of the pseudo binary solid solu-
tions. It has been reported [1] that the rocksalt structure is obtained for OSX:S;0.43. This
alloy system is attractive for optoelectronic devices in the IR region (see, e.g., Ref. [2]).
ES.2 OPTICAL CONSTANTS

The composition and temperature dependence of the lowest-band-gap energy for Pb l_
xSnxSe has been reported by several authors [3-S]. We reproduce in Fig. ES-l the ex-
perimental results obtained by Charar et al. [S]. The samples with 0Sx:S;1.0 and
0.2S-1O-llm thick were elaborated on (III)Si substrates by a classical hot-wall epitaxy
method. The layers with OSxs;o.43 exhibited the rocksalt structure, whereas those for
0.43<x:S;0.76 presented a two phase constitution. The Eg vs. x(T) dependence obtained
by these authors is written as [S]
0.49ST2
Eg(x,T) =148.8+ 40.7+T -(0.179T+883)x meV (ES.I)
On the other hand, a form of Eg(x,T) obtained by Strauss [3] is simply given by
Eg(x,T) =I30-890x+0.4ST meV (ES.2)
At T=300 K the composition at which the L/ states crossover is x-O.3 (see also Ref.
[6]).
The optical dielectric constant £~ reported for Pbl_xSnxSe at 300 K gradually increases
from 24.0 (x=0) to 29.3 (x=0.23) [7]. The far-IR magnetoplasma spectra have also been
measured on p- and n-type bulk samples with OSx:S;0.2S [7] and on epitaxial n-Pb l _
xSnxSe films (0.04Sx:S;0.21) grown on BaF2 substrates [8].
The long-wavelength edge of fundamental absorption and absorption by free carries
in n-Pbl_xSnxSe (x=0.06) with n=1.0xlOI7-S.0xlOls cm-3 was investigated by Luchytskii
et at. [9] at T=77-4S0 K. In samples with n>SxlO l7 cm-3 the absorption edge was de-
scribed by the Urbach rule only at high temperatures. At low temperatures the
Burstein-Moss effect was found to dominate the absorption edge shape. More recently,
Veis and Suvorova [10] have measured the optical absorption spectra in undoped p-Pb 1_
649
6S0 N-VI SEMICONDUCTORS
300
Pb Sn Se
1-x x
T=300 K
200
>E
- 100
0r-----------------------~~----------~
-100
o 10 20 30 40
Composition (Ufo)
Figure ES·l Energy gap Eg vs. composition x for Pbl",Sn.,Se at 300 K. The solid and dashed
lines represent the calculated results of Eqs. (E5.1) and (E5.2), respectively. (From Charar et al.
[5].)
..Sn..Se (0~.06) at 300 K and found a quasilocallevel associated with a chalcogen

vacancy in all samples studied. They showed that the chalcogen vacancy density in
samples with tin is appreciably different from that in samples without tin, and it in-
creases with x.
The optical constants, n and k, of Pbo.9SIlo.tSe layer grown on (111)Si substrate were
determined from reflectance and transmittance measurements at T=15-250 K by Cha-
rar et al. [5]. Their obtained results are reproduced in Fig. ES-2. A method for the cal-
culation of the refractive-index dispersion of some lead and lead-tin chalcogenides,
including Pbl..,Sn..Se, has been proposed by Shani et al. [11].
REFERENCES
1. H. Krebs, K. GrUn, and D. Kallen, Z. Anorg. Allgern. Chern. 312,309 (1961).
2. H. Zogg, A. Fach, J. John, P. Muller, C. Paglino, and A. N. Tiwari, Proc. SPlE
3182,26 (1998).
3. A. J. Strauss, Phys. Rev.lS7, 608 (1967).
4. H. Preier,Appl. Phys. 20,189 (1979).
5. S. Charar, A. Obadi, C. Fau, M. Averous, V. D. Ribes, S. Dal Corso, B. Liautard,
J. C. Tedenac, and S. Brunet, Int. f. Infrared Milli. Waves 17,365 (1996).
6. J. O. Dimmock, I. Melngailis, and A. J. Strauss, Phys. Rev. Lett. 16, 1193 (1966).
E5 LEAD TIN SELENIDE (Pbl_.Sn.Se) 651
7. I. V. Kucherenko, Yu. A. Mityagin, L. K. Vodop'yanov, and A. P. Shotov, Sov.
Phys. Semicond. 11,282 (1977).
8. A. A. Kopylov, V. A. Moshnikov, and A. N. Kholodilov, Semicond. 31, 1132
(1997).
9. R. M. Luchytskii, V. S. Manzhara, and P. M. Staryk, Phys. Status Solidi B 94, 381
(1979).
10. A. N. Veis and N. A. Suvorova, Semicond. 32, 397 (1998).
11. Y. Shani, R. Rosman, and A. Katzir, IEEE J. Quantum Electron. QE·21 , 51
(1985).
-
c
.~
u
2
z
iE
~ 1.5 a
u
c
o
-
;
u
.E 0.5
x
W o~~~-~-~-~~--~~--~--~--~--~------~
0.05 0.15 0.25 0.35 0.45
Energy (eV)
- 250 K - 150 K .. 100 K

c 50 K >< 40 K '" 15 K
Figure ES·2 (a) Refractive index and (b) extinction coefficient of Pbl_.Sn.Se (x=O.l) deter-
mined from optical reflection and transmission measurements at different temperatures. (From
Charar et al. [5].)
E6 LEAD TIN TELLURIDE
(Pb1_..8nxTe)

The lead salt semiconductors have been applied mainly in the fabrication of mid-IR
photodetectors and diode lasers (see, e.g., Refs. [1,2]). Pb1_zSnzTe is one of the most
important classical alloys of the lead salt family. Since PbTe and SnTe have the cubic
rocksalt structure, their alloys form a complete series of the pseudobinary solid solu-
tions. The successful growth of multilayer structures like superlattices and quantum
wells of the lead salts by MBE has improved the basic research of quantum effects in
these materials (see, e.g., Ref. [3]).

Figure E6-1 shows the schematic representation of the valence and conduction bands at
12 K for PbTe, Pb1_zSnzTe (Eg=O eV), and SnTe [4]. PbTe has a direct band gap,
E o=Ec(L6-)-EiL6+), at the L point in the BZ. The lowest band gap in SnTe also occurs
at the L point, but the symmetries of its band extrema are reversed [Le., Eo=Ec(L/)-Ev
(a) PbTe (c) SnTe
Figure E6-1 Schematic representation of the valence and conduction bands at 12 K for (a)
PbTe, (b) Pbl ....SnzTe (E,=O eV), and (c) SnTe. (From Dimmocketal. [4].)
652
E6 LEAD TIN TELLURIDE (Pb1 .•Sn.Te) 653
(L6)]. According to the band inversion model of Dimmock et al. [4], the band-gap en-
ergy Eg of Pb1 .•Sn.Te initially decreases as x increases, vanishing for an intermediate
alloy composition, and then increases with further increase of x. The composition at
which the band inversion occurs increases from 0.35 to 0.65 as the temperature in-
creases from 4 to 300 K [4]. Takaoka et al. [5] found from the far-IR magnetoplasma
measurements that the band-edge masses and band-gap energies seem not to reach zero
at the band inversion composition 0.15<x<OAO (T=4.2-20 K) in 1 at.% In-doped Pb l.
•SnxTe single crystals. However, they could not conclude whether the nonzero effect of
these band parameters is an essential phenomenon in Pbl.xSnxTe or occurred as a result
of the In doping.
The Pbl.xSnxTe alloy can be characterized by large static (ej and optical dielectric
constants (e..). The e, value at 300 K is in the range 230-450 (0$x$0.2) [6], while the
300-K e~(x) value can be simply given by 33+48x for O~OA [7]. It has also been re-
ported [8] that e, increases with increasing x and decreases with increasing temperature
T.
IR optical properties of Pbl.xSnxTe were investigated only for a few on the Pb-rich
side (x::;O.25) [9-12]. Epitaxial films [9-11] and bulk sample [12] were used in these
measurements. A Pbo.SsSno.12Te epitaxial film oflow carrier concentration (p_10 16 cm·3)
grown on a high-carrier-density (p_10 18 cm·3) Pbo.7sSn0.22Te substrate enabled an analy-
sis of the reflectivity data at T=77 and 300 K using a two-oscillator dielectric function
including a Drude term [9]. The 3OO-K reststrahlen parameters derived from this analy-
sis were: e~=39, ooTO=32 cm'l, ooLO=115.7 cm'l, and r19 cm· l . It is known that the ad-
dition of In into Pbl.xSnxTe results in a striking modification of the material properties
(see Ref. [12]). Far-IR reflectivity spectra for In-doped Pbl.xSnxTe have been measured
for samples with a doping level of 0.5 at.% [12] and above 0.5 at.% [11]. These data
showed that the plasma frequency oop decreases on cooling from T=300 to 40 [11] or 30
K [12]. Further decrease of T results in a drastic increase in oop [11,12]. Examples of
these results are shown in Fig. E6-2 [12]. A local mode due to In vibration was ob-
served at 160 cm·1 in In-doped Pbl.xSnxTe [13].
Optical absorption spectra for Pbl.~nxTe with x=O.1 and 0.2 were measured at 300 K
in the photon-energy range between 0.2 and 0.8 eV [14]. The samples were single-
crystalline epitaxial films grown by thermal evaporation on mica or NaCl. A fit with
theoretical model suggested that the discrepancy at higher photon energies can be at-
tributed to deviations from Kane's dispersion law in the direction of stronger non-
parabolicity. Study on the absorption coefficient ofPb1.xSnxTe has also been performed
theoretically using the k·p band parameters and including the Burstein-Moss shift of
the absorption edge [15].
The refractive indices of Pbl .• Sn.Te have been determined by Jager and Schubert
[16] for a number of alloy compositions (0$x:5:0A2) in the vicinity of the fundamental
absorption edge. The Pb1 .•SnxTe layers were evaporated on single-crystalline Si and
polycrystalline Ge substrates. The evaporated layers were polycrystalline and of p-type
conductivity with a carrier concentration between 1 and 3xlO18 cm·3 • Measurement was
based on the interference fringes in the transmission spectra. We reproduce in Fig. E6-3
PbO.7SSnO.2STe
300K
1.0
o
t
0.5
0
1
0
1
§
,.,
~
~
~., 0
a: 1
0
0.5 1
o
1
5K o
0.5
o 50 100 150 200 250

Wave number (em-')
Figure E6-2 IR reflection spectra for In-doped Pb 1_..5nzTe (x=O.25) single crystal at various
temperatures. The open circles and solid lines show the experimental data and calculated results,
respectively. (From Romeevic et ai. [12].)
the results measured by these authors [16]. A plot of n at a wavelength of 10 IJ.m vs.
alloy composition x showed that n increases with increasing x at a rate of 0.013 per
mole per cent. No clear difference in the n data was observed for the layers evaporated
on Si and Ge substrates.
Shani et at. [17] have modeled the refractive-index dispersion near the fundamental
absorption edge ofPb-based alloys, including Pb1_zSnzTe. The KK relation is used as
E6 LEAD TIN TELLURIDE (Pb1_.Sn.Te) 655
• 0 From maxima
)( + From minima
Pb,_xSn J( Te
x =0·32~ x- 0·42 Layers on
~ "xe/ Si-substrates
.Y--;
, + "X
x:O'19~ b.I- ~
..... -~-+:x.~
6·0 X:O'I~~
,.. ~
PbTe~ "lte><...~
~ .xe>;<
0
'" ~ x...~x...
.Ht~ •
•X\~
5'5
.......~.
x of
5 10 15
Wavelength (A m)
Figure E6·3 Room-temperature refractive indices for polycrystalline Pb1_.Sn.Te layers
(x=O--O.42) deposited on Si substrates measured from the interference fringes in the transmis-
sion spectra. (From Jager and Schubert [16].)
the optical-dispersion expression in the modeling. The nonpbarabolicy and carrier

population effects are properly taken into consideration. The calculated results are in
good agreement with the available experimental data.
The fundamental reflectivity in the interband transition region ofPbl_xSnxTe has been
measured at 300 K by Kom and Braunstein [18]. The alloy crystals (x--O-1.0) were
grown by Czochralski method. They were cut, ground, hand polished, and fmally elec-
trochemically etched to produce optical quality surfaces. The 77-K Hall concentrations
were in the range between p=4xIQl8 (x=0.09) and p=8xIQ20 cm- l (x=1.0). By perform-
ing the KK analysis, these authors extracted the (n, k) values; however, only the data
for PbTe (x=0) and SnTe (x= 1.0) were reported in graphical form. Kom and Braunstein
[18] also reported the wavelength-modulation-derivative-reflectivity spectra at 80 K for
these samples. The CPs found in these optical spectra were correlated with various
electronic transitions in the BZ.
Suzuki and Adachi [19] have reported the optical response in Pb..Sn1_zTe in the 1.15-
5.5-eV photon-energy range at 300 K measured by SE. The bulk samples were grown
by a conventional Bridgman method. We show in Fig. E6-4 their obtained nee) and
k(E) spectra of PbzSnl.zTe (O$.x$].O) [19]. These spectra reveal distinct structures at
energies of the E1, E2 , and E3 CPs. Dielectric-related optical constants, such as the com-
plex dielectric function '(c=cI+iEz), absorption coefficient (ex), and normal-incidence
reflectivity (R), were also presented in Ref. [19].
1E,
8r-------------------~
7
5 --x..o.OO
6 0.16
0.35
--x..o.OO 0.56
5 0.16 0.78
0.35 1.00
c 4 0.56
0.78
1.00
3 3
2
2
(a) (b)
2 3 4 5 6 11 2 3 4 5 6
Figure E6-4 (a) nee) and (b) k(E) spectra of Pbl.zSnzTe (0::;x:51.0) measured by SE at 300 K.
(From Suzuki and Adachi [19].)
REFERENCES
1. H. Preier, Appl. Phys. 20, 189 (1979).
2. A. Rogalski, Infrared Phys. Technol. 38, 295 (1997).
3. D. L. Partin, in Semiconductors and Semimetals, edited by R. K. Willardson and
A. C. Beer (Academic, Boston, 1991), Vol. 33 (Volume Editor, T. P. Pearsall), p.
311.
4. J. O. Dimmock, 1. Melngailis, and A. J. Strauss, Phys. Rev. Lett. 16, 1193 (1966).
5. S. Takaoka, S. Shimomura, H. Takahashi, and K. Murase, Phys. Rev. B 40, 5642
(1989).
6. H. Lehmann, G. Nimtz, L. D. Haas, and T. Jakobus,Appl. Phys. 25,291 (1981).
7. J. R. Lowney and S. D. Senturia, J. Appl. Phys. 47,1771 (1976).
8. S. Nishi, H. Kawamura, and K. Murase, Phys. Status Solidi B 97, 581 (1980).
9. W. E. Tennant and J. A. Cape, Phys. Rev. B 13,2540 (1976).
E6 LEAD TIN TELLURIDE (Pb1.xSnxTe) 657
10. P. M. Amirtharaj, B. L. Bean, and S. Perkowitz, J. Opt. Soc. Am. 67,939 (1977).
11. S. W. McKnight and M. K. EI-Rayess, Solid State Commun. 49,1001 (1984).
12. N. Romcevic, Z. V. Popovic, D. Khokhlov, A. V. Nikorich, and W. Konig, Infra-
red Phys. 31,225 (1991).
13. S. Takaoka and K. Murase,J. Phys. Soc. Jpn 52, 25 (1983).
14. 1. A. Drabkin, L. Ya. Morgovskii, 1. V. Nel'son, and Yu. 1. Ravich, Sov.
Phys.-Semicond. 6, 1156 (1973).
15. W. W. Anderson, Infrared Phys. 20, 363 (1980).
16. H. Jager and G. Schubert, Infrared Phys. 13,29 (1973).
17. Y. Shani, R. Rosman, and A. Katzir, IEEE J. Quantum Electron. QE-21 , 51
(1985).
18. D. M. Kom and R. Braunstein, Phys. Rev. B 5,4837 (1972).
19. N. Suzuki and S. Adachi, J. Appl. Phys. 79, 2065 (1996).
F
AMORPHOUS SEMICONDUCTORS
F1 a-DIAMOND-LIKE CARBON
(a-DLC)
Fl.1 GENERAL REMARKS

Hydrogenated amorphous diamond-like carbon (a-DLC) has recently attracted much
attention. It is a mixture of atomic hydrogen and carbon forming mostly tetrahedral Sp3
bonds and has several superior physical properties, such as high mechanical hardness,
low friction coefficient, and stable chemical inertness [1-3]. Properties of a-DLC de-
pend strongly on preparation conditions. Many attempts have, thus, been made to make
clear preparation condition vs. property relationships and revealed that a-DLC film rep-
resents a broad range in structure, being primarily amorphous with variable proportion
of Sp2 and Sp3 bonding, broadly governed by hydrogen concentration. The diamond-like
nature of the film is found to be principally controlled by the proportion of Sp3 bonding
relative to that of the Sp2 (graphite-like) bonding. The role of hydrogen is to stabilize
660 AMORPHOUS SEMICONDUCTORS
the Sp3 bonding [4].
Fl.2 OPTICAL CONSTANTS

Optical properties of a-DLC depend strongly on the ratio of sp3/sl, thus, on prepara-
tion techniques and conditions. Therefore, the reader should carefully compare them
before using data from the literature. Table F1-1 summarizes the optical-constant
measurements for a-DLC [5-18].
It is possible to prepare samples with an optical band gap Eo anywhere in the
0.5-3.0-eV range, but most easily in the 1-2-eV range. Notice the trend toward in-
creasing Eo with increasing hydrogen content [5,10]. High Sp3 concentration is the most
impressive feature of a-DLC. Such high sp3-concentrated films can be formed by de-
position from a filtered beam of c+ ions from a cathodic arc and have of the order of
80-85% sl bonding and Eo of 2.0-2.5 eV [19]. Carbon films of this type are termed
tetrahedral amorphous carbon (ta-C) , containing no hydrogen atoms. Several tech-
niques, using ion beam, laser ablation, etc., have been developed to produce ta-C films
at room temperature (see Ref. [20]). The optical constants of ta-C have been studied
using various methods [21-6].
a-DLC films show two broad absorption peaks in their optical spectra. The lower-
energy peak corresponds mainly to the 1t-1t* transitions in Sp2 bonded clusters, while
TABLE Fl-l Summary of the optical-constant measurements for a-DLC.

Preparation
Method Optical Constant Measurement Technique Spectral Range Ref
rf plasma (CJI6) n OI 1-10 J.Ull [5]
rf plasma (C 6H6) a OA 0.2-25 J.Ull [6]
dc plasma (C 2H0 (£1> £2) R&T 0.5-6.54 eV [7]
dc plasma (C 2H0 (£1> £2), (n, k), a R&T 1.45-4.9 eV [8]
rf plasma (C 6H6) £2 EELS 0-40eV [9]
mD(C~) (£1> Ez), (n, k) SE 0-20eV [10]
rfplasma (n, k) SE 1.75-3.5 eV [11]
PLD a OA 1-6eV [12]
rf plasma (CH4) (£1> £2), R R 0.5-25 eV [13]
rf plasma (C 2H2) T, (n, k) IRA, SE 200-4000 cm· j [14]
2-4.5 eV
laser ablation EELS 0-65 eV [15]
(graphite)
rf and dc plasma SE 1.5-10 eV [16]
mD
rf plasma (C 2H2) (£1> £2), (n, k), a R&T 0.5-7 eV [17]
rf plasma (CH4 ) (n, k) SE 0.35-1.35 J.Ull [18]
OI=Opitcal Interference, OA=Optical Absorption, R&T=Reflection and Transmission,
EELS=Electron-Energy-Loss Spectroscopy, ffiD=Ion Beam Deposition, SE=Spectroscopic
Ellipsometry, PLD=Pulsed Ruby Laser Deposition, R=Reflectance (KK transformation),
IRA=IR Absorption.
Fl a-DIAMOND-UKE CARBON (a-DLC) 661
the higher-energy peak is mainly due to the 0-0* transitions in Sp3 bonded clusters [27].
Wagner et al. [28] obtained a peak of the 1t-1t* transitions at 3.5 eV, and Fink et al.
[10] put the 1t-1t* transitions in the energy range of 3.5-6.5 eV. On the other hand, an
absorption peak due to the 0-0* transitions was observed at -12 e V by Fink et al. [10]
and Yokoyama et al. [13].
To our knowledge, there are no experimental data on the optical constants of amor-
phous diamond (Le., 100% Sp3 bonded). Because of this, Smith [9] relied on
"smoothed" values of ~\ and ~ derived from measurements on crystalline diamond for
the use of EMA analysis.
a-DLC films graphitize above a few hundred degree Celcius [8,9,15,16]. The optical
spectra of graphitized films are quite different from a-DLC, e.g., in the lack of an opti-
cal absorption edge. Thin films deposited by sputtering or flash evaporation may con-
tain over 80% sp2-bonded sites. The absence of optical absorption edge has been found
in such films [15,29] and also in glassy carbon [30]. These materials may, thus, show
almost metallic conductivity. The refractive-index dispersion near the K edge of amor-
phous carbon has been determined by measuring the shift in the Bragg angle caused by
refraction [31].
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18. X. Zhang, W. H. Weber, W. C. Vassell, T. J. Potter, and M. A. Tamor, J. Appl.
Phys. 83, 2820 (1998).
19. D. R. McKenzie, Y. Yin, N. A. Marks, C. A. Davis, B. A. Pailthorpe, G. A. J.
Amaratunga, and V. S. Veersasmy, Diamond Relat. Mater. 3,353 (1994).
20. S. Logothetidis and G. Stergioudis, Appl. Phys. Lett. 71, 2463 (1997).
21. V. S. Veerasamy, J. Yuan, G. A. J. Amaratunga, W. I. Milne, K. W. R. Gilkes, M.
Weiler, and L. M. Brown, Phys. Rev. B 48,17954 (1993).
22. S. Logothetidis, Appl. Phys. Lett. 69, 158 (1996).
23. W. G. Parker, T. J. Watson, and J. R. Sambles, Thin Solid Films 279, 162 (1996).
24. S. Logothetids and M. Gioti, Mater. Sci. Eng. B 46, 119 (1997).
25. B. K. Tay, X. Shi, L. K. Cheah, and D. I. Flynn, Thin Solid Films 308-309, 268
(1997).
26. S. Xu, L. K. Cheah, and B. K. Tay, Thin Solid Films 312,160 (1998).
27. J. Robertson and C. A. Davis, Diamond Relat. Mater. 4,441 (1995).
28. J. Wagner, M. Ramsteiner, Ch. Wild, andP. Koidl, Phys. Rev. B 40,1817 (1989).
29. E. T. Arakawa, S. M. Dolfini, J. C. Ashley, and M. W. Williams, Phys. Rev. B 31,
8097 (1985).
30. M. W. Williams and E. T. Arakawa, J. Appl. Phys. 43,3460 (1972).
31. E. Spiller,Appl. Opt. 29,19 (1990).
F2 8-SILICON
(8-S0
F2.1 GENERAL REMARKS

Optical properties of amorphous silicon (a-Si) depend strongly on preparation tech-
niques and conditions. Structural studies suggested that a-Si fllms contain microvoids
on the order of 5-10 A [1]. These structural defects give rise to a large density of states
in the gap of the semiconductor. It has, however, been found [2] that hydrogen incorpo-
ration reduces the density of defect states by orders of magnitude with corresponding
changes in the optical, transport, and recombination properties. Hydrogen incorporation
has been found to have quite dramatic effects in amorphous Si, i.e., it makes possible to
obtain n- and p-type materials and thus pn junctions [3,4]. Since then, hydrogenated
amorphous Si (a-Si:H) has received much attention as a promising material for wider
application to electronic devices, such as low-cost solar cells, thin film transistors, and
imaging devices [5].
F2.2 OPTICAL CONSTANTS

(a) a-Si--IR optical absorption spectrum of sputter-deposited a-Si has been measured
by Brodsky and Lurio [6] between 35 and 700 cm·1 at 300 K. The spectrum showed a
broad frequency range of absorption corresponding to the frequency range of the pho-
non DOS of c-Si. It was interpreted in terms of a disorder-induced breakdown of the
selection rules for vibronic transitions.
The refractive-index dispersion in the region below the optical absorption edge of a-
Si has been measured by Hirose et al. [7]. The a-Si samples were grown by CVD at
temperatures ~550°C on quartz substrates. The silane gas, diluted by Hz (mostly 1%
Si~), was admitted into a horizontal CVD tube with N z carrier gas. Note that dis-
charge-produced amorphous Si contains 15-20 at.% of bonded hydrogen atoms. On the
other hand, the pyrolytic decomposition of silane (CVD) at 450°C produces an amor-
phous fllm that contains a small concentration (-2 at.%) of hydrogen. Above -500°C,
hydrogen evolves rapidly from the fllm. A long-wavelength refractive index n of -3.48,
identical to that for c-Si (-3.41. Ref. [8]), was obtained in this study. Brodsky et at. [9]
also determined the n dispersion of a-Si and its annealing behaviors. The samples used
were deposited on sapphire substrates by rf sputtering in an Ar atmosphere. The n val-
ues were found to decrease rapidly by annealing at above 400°C, in coincidence with
the onset of crystallization observed bY,X-ray diffraction.
663
Optical absorption at the fundamental absorption edge of a-Si has been investigated
[7,9-12]. The optical band gap Eo, determined from the optical absorption spectrum for
sample deposited by rf sputtering in pure Ar, was -LOS eV [12]. It was considerably
smaller than that for sample rf-sputter-deposited in a mixture of Ar and Hz (-1.35 eV)
or those for glow-discharge a-Si:H samples (-1.63-1.S0 eV) [12]. Brodsky et al. [9]
found that in Ar-sputtered a-Si films the absorption edge moves towards higher photon
energies with increasing annealing temperature. The decreasing spin density, which
accompanies the shift in the absorption edge, strongly suggests that this behavior re-
sults from a reduction in the density of gap states when some of the structural defects,
probably associated with multivacancies are annealed out. The pressure-dependent op-
tical absorption properties of a-Si and a-Si:H were discussed in Ref. [11].
The fundamental reflectivity spectra of a-Si have been measured by Pierce and
Spicer [13] from 0.4 to 11 eV at 300 K. Near-normal-incidence R measurements were
made on a 600-A thick a-Si fabricated bye-gun evaporation. By performing the KK
analysis, the (n, k) and (£I'~) values were extracted. The optical constants above 12 eV
were also obtained in Ref. [13] from an extrapolation of the measured reflectance and
transmittance and are less accurate (see Ref. [14]).
SE study on a-Si has been carried out by Aspnes et al. [15] in the 1.5-6.0-eV range,
by Fried et al. [16] in the 1.8-4.5-eV range, and by Jellison et al. [17] in the 1.5-5.2-
e V range. The samples studied were grown by CVD [15,17] or prepared by Si+-ion im-
plantation [16]. The measured ~(E) spectra showed a single broad peak that is typically
observed in tetrahedrally-bonded amorphous semiconductors. The dielectric function
exhibiting the largest ~ peak is most representative of a bulk sample of completely co-
ordinated amorphous material. The ~ peak values obtained in these studies were -29.5
atE-3.6-3.7 eV [15-17].
The soft X-ray absorption spectrum of e-gun-evaporated a-Si have been measured by
Brown and Rustgi [IS]. The spectrum for a-Si showed none of the detailed structure
observed in c-Si.
Table F2-1lists the room-temperature values of £;:£I+i~, n*=n+ik, a, and R for a-Si.
They were obtained for E~0.OS06 eV from Brodsky and Lurio [6], for 0.5~~1.6 eV
from Hirose et al. [7], for 1.7~~6 eV from Aspnes et al. [15], for S~~S eV from
Piller [14], and for F2.99 eV from Brown and Rustgi [IS].
The (£1' £Z), (n, k), and a values in Table F2-1 are shown in Figs. F2-I-F2-3, respec-
tively.
F2 a-SILICON (a-Si) 665
30
20
o 3 6 9 12 15
Photon energy (eV)
Figure F2-! E1(E) and ~(E) spectra for a-Si at 300 K.
4
~
c:- 3
0 2 4 6 8 10
Photon energy (eV)
Figure F2-2 n(E) and k(E) spectra for a-Si at 300 K.
107~~~~~~~~~~~
106
a-Si
105
.--..
IE 104
~
c:s 103
102
101
1~00_3 10-2 10-1 100 10 1 102

Photon energy (eV)
Figure F2-3 a(E) spectrum for a-Si at 300 K.
Table F2-! Optical constants of a-Si at 300 K.

eV £1 ~ n k a (cm-I ) R
0.00868 0.075 6.60E+01
0.00992 0.020 1.98E+01
0.0102 0.017 1.74E+01
0.0112 0.021 2.40E+01
0.0124 0.045 5.70E+01
0.0149 0.083 1.25E+02
0.0174 0.103 1.82E+02
0.0198 0.112 2.25E+02
0.0223 0.112 2.53E+02
0.0236 0.108 2.58E+02
0.0248 0.079 1.98E+02
0.026 0.050 1.32E+02
0.0273 0.053 1.46E+02
0.0297 0.061 1.83E+02
0.0322 0.068 2.22E+02
0.0347 0.083 2.9IE+02
0.0359 0.082 3.01E+02
0.0372 0.079 2.99E+02
0.0397 0.068 2.73E+02
0.0421 0.047 2.03E+02
0.0446 0.049 2.23E+02
0.0471 0.050 2.39E+02
0.0496 0.049 2.46E+02
0.0521 0.049 2.60E+02
0.0545 0.051 2.83E+02
Table F2-! Continued (a-Si).
eV £1 £2 n k a (em-I) R
0.057 0.058 3.33E+02
0.0589 0.059 3.54E+02
0.062 0.043 2.73E+02
0.0682 0.010 6.90E+01
0.0744 0.0028 2.lOE+01
0.0806 0.00081 6.60E+00
0.5 12.08 3.475 0.306
0.6 12.10 3.479 0.306
0.7 12.28 0.014 3.504 0.0020 1.43E+02 0.309
0.8 12.52 0.022 3.538 0.0031 2.50E+02 0.313
0.9 12.78 0.035 3.575 0.0049 4.50E+02 0.317
1.0 13.11 0.054 3.621 0.0074 7.50E+02 0.322
1.1 13.49 0.058 3.673 0.0079 8.80E+02 0.327
1.2 13.88 0.063 3.725 0.0085 1.04E+03 0.333
1.3 14.40 0.069 3.795 0.0091 1.20E+03 0.340
1.4 14.92 0.076 3.863 0.0099 1.40E+03 0.347
1.5 16.72 0.131 4.089 0.016 2.50E+03 0.368
1.6 17.28 0.233 4.157 0.028 4.60E+03 0.375
1.7 18.06 0.556 4.250 0.065 1.13E+04 0.383
1.8 18.89 1.111 4.348 0.128 2.33E+04 0.392
1.9 19.67 1.722 4.439 0.194 3.74E+04 0.401
2 20.53 2.500 4.539 0.275 5.58E+04 0.410
2.1 21.30 3.333 4.629 0.360 7.67E+04 0.418
2.2 22.22 4.361 4.736 0.460 1.03E+05 0.428
2.3 22.83 5.611 4.814 0.583 1.36E+05 0.436
2.4 23.39 7.111 4.891 0.727 1.77E+05 0.445
2.5 23.94 8.500 4.968 0.856 2.17E+05 0.453
2.6 24.42 10.11 5.042 1.003 2.64E+05 0.462
2.7 24.53 11.94 5.090 1.173 3.21E+05 0.471
2.8 24.53 13.89 5.134 1.353 3.84E+05 0.480
2.9 24.44 15.89 5.177 1.535 4.51E+05 0.489
3 23.89 18.00 5.187 1.735 5.28E+05 0.497
3.1 23.06 20.28 5.185 1.956 6. 15E+05 0.507
3.2 21.67 22.56 5.145 2.192 7. 11E+05 0.517
3.3 19.72 25.11 5.082 2.471 8.27E+05 0.528
3.4 17.78 26.67 4.991 2.671 9.21E+05 0.536
3.5 15.28 28.06 4.859 2.887 1.02E+06 0.544
3.6 12.58 29.33 4.717 3.109 1.13E+06 0.554
3.7 9.722 29.53 4.517 3.268 1.23E+06 0.561
3.8 6.833 29.44 4.305 3.420 1.32E+06 0.568
3.9 3.806 29.11 4.072 3.574 1.41E+06 0.577
4 0.833 28.06 3.801 3.690 1.50E+06 0.585
4.1 -1.389 27.22 3.596 3.785 1.57E+06 0.594
4.2 -3.389 25.67 3.354 3.826 1.63E+06 0.601
4.3 -4.944 24.31 3.151 3.857 1.68E+06 0.607
4.4 -6.389 22.78 2.938 3.876 1.73E+06 0.615
4.5 -7.333 21.39 2.764 3.869 1.77E+06 0.621
4.6 -8.222 20.00 2.589 3.863 1.80E+06 0.628
4.7 -8.778 18.61 2.429 3.831 1.83E+06 0.632
4.8 -9.250 17.17 2.264 3.791 1.85E+06 0.638
Table F2·1 Continued (a-Si).

eV E\ ~ n k a (cm'\) R
4.9 -9.444 15.78 2.115 3.730 1.85E+06 0.642
5 -9.556 14.44 1.970 3.666 1.86E+06 0.646
5.1 -9.583 13.33 1.849 3.606 1.86E+06 0.650
5.2 -9.611 12.22 1.723 3.547 1.87E+06 0.655
5.3 -9.500 11.36 1.629 3.486 1.87E+06 0.658
5.4 -9.444 10.53 1.533 3.434 1.88E+06 0.663
5.5 -9.417 9.778 1.442 3.391 1.89E+06 0.670
5.6 -9.222 9.111 1.368 3.331 1.89E+06 0.672
5.7 -8.917 8.361 1.286 3.251 1.88E+06 0.674
5.8 -8.611 7.778 1.223 3.179 1.87E+06 0.675
5.9 -8.278 7.278 1.171 3.106 1.86E+06 0.674
6 -7.778 6.667 1.110 3.002 1.83E+06 0.670
8 -2.12 2.11 0.66 1.60 1.30E+06 0.503
9 -1.53 1.47 0.54 1.35 1.23E+06 0.483
10 -1.09 1.05 0.46 1.14 l.16E+06 0.464
12 -0.42 0.47 0.33 0.73 8.83E+05 0.428
14 0.073 0.39 0.49 0.40 5.72E+05 0.181
16 0.30 0.31 0.60 0.26 4.23E+05 0.086
18 0.44 0.25 0.69 0.18 3.30E+05 0.044
20 0.56 0.20 0.76 0.13 2.68E+05 0.024
24 0.71 0.14 0.85 0.081 1.98E+05 0.0089
28 0.80 0.10 0.90 0.058 1.64E+05 0.0038
32 0.87 0.085 0.93 0.046 1.48E+05 0.0018
36 0.91 0.072 0.96 0.038 1.38E+05 0.00091
40 0.94 0.063 0.97 0.033 1.32E+05 0.00051
44 0.96 0.056 0.98 0.029 1.27E+05 0.00030
48 0.98 0.050 0.99 0.025 1.22E+05 0.00018
99 0.0035 3.48E+04
99.5 0.0039 3.92E+04
100 0.0095 9.68E+04
100.1 0.0101 1.02E+05
100.25 0.0098 9.98E+04
100.5 0.0117 l.19E+05
100.7 0.0122 1.25E+05
101 0.0118 1.2IE+05
101.5 0.0114 1.17E+05
102 0.0111 l.15E+05
103 0.0109 1.14E+05
104 0.0110 1.16E+05
105 0.0113 1.20E+05
(b) a-Si:H-Optical properties of a-Si:H depend strongly on the amount of hydrogen
content [19]. One important step toward the understanding and controlling the properti-
es of a-Si:H is the determination of the hydrogen bonding arrangement. At low hydro-
gen concentrations, one may expect H atoms to be mainly in the monohydride (Si-H)
form. In samples having higher H concentrations, other structural units which affect the
structural and electronic features of a-Si:H films are present [20]. IR spectroscopy is
perhaps the most widely used technique for determining both the hydrogen content and
its bonding configuration.
As shown in Fig. F2-4 [21], IR spectra of a-Si:H at 300 K consist of three absorption
regions-a wagging mode at -640 cm'l, a doublet at 840-880 cm,l due to bending-
scissors mode, and two stretching modes centered at -2000 cm,l and -2100 cm'l. The
relatively strong absorption at almost 840 cm,l is thought to be due only to near-
neighboring pairs of Si-H2 groups or to longer chain segments (Si-H2)n, whereas
isolated Si-H2 groups are assumed to produce strong IR absorption at 880 cm,l [20-2].
Absorption around 2000 cm,l is attributed to the isolated and/or clustered Si-H bonds,
and that at -2100 cm,l is attributed to Si-H2 and/or to clustered Si-H bonds [20-2].
Absorption peaks due to H2 molecules in a-Si:H have also been identified in the region
of 3900-5400 cm,l [23].
The absorption data used in the determination of the optical gap are larger than 104
cm'l. The optical gap of a-Si:H depends to a great extent on the hydrogen content
[20,24]. The large loss of hydrogen by thermal annealing resulted in a red shift of the
optical gap [24,25].
At lower values of absorption coefficient, one finds an exponential dependence, the
Urbach tail, that has been associated with the perturbation of band edges. Experimen-
tally, it is found that this exponential tail broadens with increased levels of thermal and
200
o . o,l...lo~:mIoO""""=
400 500 600 700 800 800 900 1000 2000 2100 2200
Frequency (cm'l)
Figure F2·4 IR absOIption spectra of a-Si:H films deposited by plasma-assisted CVD (solid
lines) and magnetron sputtering (dashed lines) in the (a) wagging, (b) bending-scissors, and (c)
stretching mode regions. From bottom to top, the hydrogen content C(H) is 7% (7%), 13%
(14%), 20% (20%), and 24% (30%) for plasma-assisted CVD (magnetron-sputtered) films.
(From Langford et al. [21].)
structural disorder [24]. Concomitantly, it is often found that there is a shift in the opti-
cal gap towards lower energies with greater levels of disorder. However, it has recently
been shown [26] that while the breadth of the absorption tail is a strong function of the
disorder, the mean energy gap is insensitive to the amount of disorder, even as the dis-
orderless limit is approached.
At very low absorption part, one can see another exponential part in the optical ab-
sorption spectrum. This region arises from transitions involving defect states within the
gap, and is highly sensitive to doping and deposition conditions [27].
Freeman and Paul [28] reported the effects of hydrogen on the refractive index of a-
Si:H fIlms rf-sputter-deposited on Coming 7059 glasses in a mixture of Ar and H2 •
They found a large drop in n measured at E=O.3 eV by an addition of~, followed by a
slow decrease of n with further increase of the ~ partial pressure, PH' They also ob-
tained a trend for a-Si:H to lower densities as PH is increased. In crystalline semicon-
ductors, the general trend that a higher band-gap material (or, equivalently, a smaller
density material) has a lower n value is well known (see, e.g., Fig. 5.16). Akimoto and
Gekka [29] also reported that the refractive index at N=6328 A of rf-sputtered a-Si:H
decreases with increasing hydrogen content.
The dependence of the dielectric function on hydrogen content in a-Si:H has been
studied using SE by Feng et al. [30] and Haage et al. [31]. The samples used in these
studies were deposited by the method of dc magnetron sputtering [30] or in a rf glow
discharge reactor [31]. The hydrogen content of the films was determined from IR
spectroscopy. Figures F2-5 (a) and (b) show the pseudodielectric function spectra
<e(E» of a-Si:H measured at 300 K by Feng et al. [30]. These spectra represent the
bulk dielectric functions of the fIlms modulated by the surface microroughness. Alt-
hough the thickness of the surface microroughness was estimated to be within 10 A, its
effect on the measured pseudodielectric function was significant, especially in the high-
energy part of the spectrum due to the small optical penetration depth in that region, as
shown in Fig. F2-5 (c).
The pseudodielectric-function <e(E» and dielectric-function spectra ~(E) in Fig.
F2-5 display systematic changes with increasing hydrogen content, C(H). The C(H)=O
at.% sample has its peak value of ~=27.4 at -3.6 eV. The spectrum of the hydrogenat-
ed sample shifts toward higher photon energy with lowering its ~ value. This shift cor-
responds to the blue (red) shift of the optical absorption edge with increasing (decreas-
ing) hydrogen content [24,25]. It has been reported [31] that the ~(E) peak value re-
duces with decreasing material density or, equivalently, with increasing hydrogen con-
tent. The blue shift of the spectrum is thought to be caused by the redistribution of the
electronic states in the valence band due to the formation of strong Si-H bonds in the
network [30-2].
REFERENCES
1. R. J. Temkin, W. Paul, and G. A. N. Connell, Adv. Phys. 22, 581 (1973).
F2 a-Sll..ICON (a-Si) 671
2. See, T. D. Moustakas, in Semiconductors and Semimetals, edited by R. K. Wil-

lardson and A. C. Beer (Academic, Orland, 1984), Vol. 21 (Volume Editor, J. I.
Pankove), Part A, p. 55.
3. W. E. Spear and P. G. LeComber, Solid State Commun. 17, 1193 (1975).
4. W. Paul, A. J. Lewis, G. A. N. Connell, and T. D. Moustakas, Solid State Com-
mun. 20, 969 (1976).
5. Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer
(Academic, Orland, 1984), Vol. 21 (Volume Editor, J.1. Pankove), Part D.
6. M. H. Brodsky and A. Lurio, Phys. Rev. B 9, 1646 (1974).
7. M. Hirose, M. Taniguchi, and Y. Osaka,J. Appl. Phys. 50,377 (1979).
8. K. Seeger,J. Appl. Phys. 63, 5439 (1988).
9. M. H. Brodsky, R. S. Title, K. Weiser, and G. D. Pettit, Phys. Rev. B 1, 2632
(1970).
10. H. R. Philipp, J. Phys. Chem. Solids 32,1935 (1971).
11. B. Welber and M. H. Brodsky, Phys. Rev. B 16,3660 (1977).
12. R. H. Klazes, M. H. L. M. van den Broek, J. Bezemer, and S. Radelaar, Phil. Mag.
B 45, 377 (1982).
13. D. T. Pierce and W. E. Spicer, Phys. Rev. B 5,3017 (1972).
14. H. Piller, in Handbook of Optical Constants of Solids, edited by E. D. Palik (Aca-
demic, Orlando, 1985), p. 571.
15. D. E. Aspnes, A. A. Studna, and E. Kinsbron, Phys. Rev. B 29,768 (1984).
16. M. Fried, T. Lohner, W. A. M. Aarnink, L. J. Hanekamp, and A. van Silfhout, J.
Appl. Phys. 71, 5260 (1992).
17. G. E. Jellison, Jr., M. F. Chisholm, and S. M. Gorbatkin, Appl. Phys. Lett. 62,
3348 (1993).
18. F. C. Brown and Om P. Rustgi, Phys. Rev. Lett. 28,497 (1972).
19. Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer
(Academic, Orland, 1984), Vol. 21 (Volume Editor, J. I. Pankove), Part B.
20. C. Manfredotti, F. FlZzotti, M. Boero, P. Pastorino, P. Polesello, and E. Vittone,
Phys. Rev. B 50,18046 (1994).
21. A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, Phys.
Rev. B 45, 13367 (1992).
22. P. J. Zanzucchi, in Semiconductors and Semimetals, edited by R. K. Willardson
and A. C. Beer (Academic, Orland, 1984), Vol. 21 (Volume Editor, J. I. Pankove),
Part B, p. 113.
23. Y. J. Chabal and C. K. N. Patel, Rev. Mod. Phys. 59,835 (1987).
24. G. D. Cody, in Semiconductors and Semimetals, edited by R. K. Willardson and A.
C. Beer (Academic, Orland, 1984), Vol. 21 (Volume Editor, J. I. Pankove), Part B,
p.1l.
25. S. Yamasaki, Phil. Mag. B 56, 79 (1987).
26. S. K. O'Leary, Appl. Phys. Lett. 72,1332 (1998).
27. N. M. Amer and W. B. Jackson, in Semiconductors and Semimetals, edited by R.

K. Willardson and A. C. Beer (Academic, Orland, 1984), Vol. 21 (Volume Editor,
J. 1. Pailkove), Part B, p. 83.
28. E. C. Freeman and W. Paul, Phys. Rev. B 20, 716 (1979).
29. M. Akimoto and Y. Gekka, lpn. l. Appl. Phys. 31,120 (1992).
30. G. F. Feng, M. Katiyar, J. R. Abelson, and N. Maley, Phys. Rev. B 45, 9103
(1992).
31. T. Haage, U. 1. Schmidt, H. Fath, P. Hess, B. SchrOder, and H. Oechsner, l. Appl.
Phys. 76, 4894 (1994).
32. D. Ewald, M. Milleville, and G. Weiser, Phil. Mag. B 40, 291 (1979).
~r-.-.--r-c-.--r-.-~
20
15
A_ 10
W
V 5
30
o
-5 25 (c)
-10 L--'----'--'---'---'~'___'__l
20
30r-'-'--'-'-'--r-.-~ £2
IS
25
10
20
A
N
W 15 a-Si:H
V 0
10
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
5 Photon Energy (eV)
OL·-L--'__'--_'_--'--'---'---l
. 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Photon Energy (eV)
Figure F2-S (a) Real <£I(E» and (b) imaginary parts <£2(E» of the pseudodielectric function
of a-Si:H films deposited by de magnetron sputtering. C(H) is the hydrogen content in the film.
(c) Imaginary part Ez(E) of the dielectric function of a-Si:H derived after the correction for the
surface microroughness of d=6-1O-A thick in (b). (From Feng et at. [30].)
F3 a-GERMANIUM
(a-Ge)

Amorphous germanium (a-Ge) and hydrogenated amorphous Ge (a-Ge:H) have re-
ceived much attention because of its importance in industrial applications, e.g., for use
as a low band-gap component in tandem amorphous-silicon-based solar cells [1] and
also use in solar selective surfaces for photothermal applications [2]. Knowledge of the
optical constants of a-Ge forms an important part in the design and analysis of such
solar devices and photothermal absorbers. As in amorphous silicon, hydrogen incorpo-
ration in amorphous germanium reduces the density of defect states by orders of mag-
nitude with corresponding changes in the optical properties [3].

(a) a-Ge-IR optical absorption spectrum of sputter-deposited a-Ge has been measured
by Brodsky and Lurio [4] between 35 and 700 cm-l at 300 K. The spectrum showed a
broad frequency range of absorption corresponding to the frequency range of the pho-
non DOS of c-Ge (see Fig. 2.16 in Sec. 2.2.2). It was interpreted in terms of a disorder-
induced breakdown of the selection rules for vibronic transitions.
Theye [5] studied influence of annealing on the refractive-index dispersion and opti-
cal absorption coefficients of a-Ge. The a-Ge films used were deposited by vacuum
evaporation from a tungsten boat. The n values decreased gradually as the annealing
temperature T. increased, and reached to the limiting values at T.-300°C. The values at
T.-300°C were still higher, by about 5%, than the crystalline values (n-4.0, Ref. [6]).
Further annealing at higher temperature did not modify significantly the n values, until
the beginning of the recrystallization process (;;::400°C). The optical absorption spectra
a.(E) showed the gradual shift of the fundamental absorption edge toward higher ener-
gies as T. increased from 200 to 400°C. Theye [7] also investigated the n(E) and a.(E)
spectra of vacuum-evaporated a-Ge films as a function of the substrate temperature.
The optical constants of dc-magnetron-sputtered a-Ge with different thicknesses
have been discussed by del Pozo and Dfaz [8]. A thickness dependence of the optical
gap and absorption tail has been found from absorption measurements, and it is associ-
ated with different void fractions in the films, that could induce a downward movement
of the valence band with respect to the defect states and the conduction band. The n(E)
and k(E) spectra from 1..=0.5 Ilm up to 2.2 Ilm have also been reported; note, however,
673
that the n-4.5 at 1..=2.2 11m reported is considerably smaller than the crystalline value of
n-4.0 (_€.If2_E.'f2) [6]. Connell and Pawlik [3] also reported the optical absorption
properties of rf-sputtered a-Ge films for photon energies below and above 0.15 eV up
to 0.6 eV (see Fig. F3-4 below).
The optical constants of vacuum-evaporated a-Ge were determined in the 0.1-25-eV
spectral range by analysis of precise reflectance and transmittance data [9]. A single
broad peak was observed in the measured k(E) and Ea(E) spectra at E- 3.8 and -2.8 e V,
respectively. The maximum Ea value at E-2.8 eV was found to be -19. Connell et al.
[10] have also determined the optical constants of sputter-deposited a-Ge films between
0.05 and 4.5 eV by a combination of reflectance, transmittance, and ellipsometric
measurements. They obtained the maximum Ea value of -23 at E-2.9 eV. This value
has been shown to be an apparently limiting peak value of a-Ge, Le., the corresponding
spectrum should represent the "intrinsic" dielectric properties of dense a-Ge.
Table F3-1lists the room-temperature values of E=E1+iEa, n*=n+ik, a, and R for a-Ge.
They were obtained for Eg).0421 eV from Brodsky and Lurio [4] and for &::0.055 eV
from Connell et al. [10]. The imaginary optical constants, k and a, for 0.6~::;;1.3 eV
were taken from del Pozo and Dfaz [8].
The (Elt Ea), (n, k), and a values in Table F3-1 are graphed in Figs. F3-1-F3-3, re-
spectively.
30.-~.-~.-~.-~-.~~
25 a-Ge
20
15
10
o
-5 __ __~~~~
o
L-~-L~ L-~~
1 2 3 4 5
Photon energy (eV)
Figure F3·t £I(E) and q(E) spectra for a-Ge at 300 K.
F3 a-GERMANllJM (a-Ge) 675
5 a-Ge
n
4
~
r:: 3
k
2
0 2 3 4 5
Photon energy (eV)
Figure F3·2 n(E) and k(E) spectra for a-Ge at 300 K.
107~r-~~~~~~~~~
106
a-Ge
-
105
IE 104
.2-
c:s 103
102
101
100~~~~~~~~~~~~
10-2 10-1 100 101
Photon energy (eV)
Figure F3-3 a(E) spectrum for a-Ge at 300 K.
Table F3-1 Optical constants of a-Ge at 300 K.

eV £1 £2 n k a (em-I) R
0.00868 0.Q15 1.34E+01
0.00992 0.038 3.85E+01
0.0112 0.039 4A4E+01
0.0124 0.026 3.28E+01
0.0133 0.0077 1.04E+01
0.0136 0.012 1.64E+01
0.0149 0.041 6.llE+01
0.0155 0.050 7.84E+01
0.0161 0.051 8.26E+01
0.v174 0.052 9.07E+01
0.0186 0.050 9A8E+01
0.0198 0.049 9.81E+01
0.0211 0.058 1.23E+02
0.0223 0.058 1.31E+02
0.0229 0.057 1.32E+02
0.0236 0.055 1.3IE+02
0.0248 0.046 l.15E+02
0.026 0.038 1.0IE+02
0.0273 0.035 9.8IE+01
0.0285 0.035 1.02E+02
0.0297 0.039 l.18E+02
0.031 0.043 1.36E+02
0.0322 0.047 1.52E+02
0.0335 0.048 1.64E+02
0.0341 0.048 1.66E+02
0.0347 0.047 1.64E+02
0.0359 0.038 1.40E+02
0.0372 0.029 l.11E+02
0.0384 0.023 8.80E+01
0.0397 0.018 7.37E+01
0.0409 0.016 6.50E+01
0.0421 0.014 6.llE+01
0.055 0.0018 1.00E+01
0.06 0.0018 l.10E+01
0.07 0.0018 1.30E+01
0.08 0.0019 1.55E+Ol
0.09 0.0021 1.90E+01
0.1 0.0022 2.25E+01
0.11 0.0024 2.70E+01
0.115 0.0026 3.00E+01
0.2 17.2 0.037 4.15 0.0044 9.00E+01 0.374
0.3 1704 0.058 4.17 0.0069 2.lOE+02 0.376
004 17.7 0.10 4.21 0.012 5.00E+02 0.380
0.5 18.1 0.17 4.26 0.020 1.00E+03 0.384
0.6 18.7 0.24 4.33 0.028 1.70E+03 0.390
0.7 1904 0040 4040 0.045 3.20E+03 0.396
0.8 20.0 0.64 4047 0.072 5.80E+03 00403
0.9 20.8 1.09 4.56 0.12 l.10E+04 00410
1 21.6 1.86 4.65 0.20 2.00E+04 00418
F3 a-GERMANIUM (a-Ge) 677
Table F3-1 Continued (a-Ge).

eV £1 q n k a. (em-I) R
1.1 22.6 2.95 4.76 0.31 3.50E+04 0.428
1.2 23.5 4.29 4.87 0.44 5.30E+04 0.438
1.3 24.2 6.05 4.96 0.61 8.00E+04 0.447
1.4 24.7 7.42 5.02 0.74 1.05E+05 0.454
1.5 24.7 9.08 5.05 0.90 1.37E+OS 0.460
1.6 24.5 10.9 5.07 1.08 1.7SE+OS 0.466
1.7 24.0 12.S S.OS 1.24 2. 14E+OS 0.470
1.8 23.3 14.1 5.03 1.41 2.S6E+OS 0.475
1.9 22.3 IS.S 4.97 1.S6 3.00E+OS 0.478
2 21.2 16.8 4.91 1.71 3.46E+OS 0.481
2.1 20.1 18.0 4.85 1.85 3.94E+OS 0.48S
2.2 18.9 19.1 4.78 1.99 4.44E+OS 0.489
2.3 17.2 19.9 4.66 2.13 4.97E+OS 0.491
2.4 lS.8 20.8 4.S8 2.27 5.S2E+OS 0.495
2.5 14.3 21.5 4.48 2.40 6.lOE+OS OSlO
2.6 13.1 22.2 4.41 2.51 6.62E+OS 0.504
2.7 11.5 22.6 4.29 2.64 7.2IE+05 0.509
2.8 9.94 22.9 4.18 2.74 7.78E+OS 0.513
2.9 8.54 22.9 4.06 2.82 8.28E+OS &.316
3 7.14 22.8 3.94 2.89 8.80E+05 0.519
3.1 5.48 22.6 3.79 2.98 9.37E+05 0.524
3.2 4.20 22.3 3.67 3.04 9.86E+OS 0.527
3.3 3.06 21.9 3.55 3.09 1.03E+06 0.S30
3.4 2.04 21.3 3.42 3.11 1.07E+06 0.532
3.5 0.64 20.6 3.26 3.16 1.12E+06 0.536
3.6 -0.25 19.6 3.11 3.15 1.1SE+06 0.536
3.7 -1.27 18.8 2.96 3.17 1.19E+06 0.540
3.8 -2.04 18.2 2.85 3.19 1.23E+06 0.544
3.9 -2.68 17.3 2.73 3.18 1.26E+06 0.545
4 -3.24 16.6 2.62 3.18 1.29E+06 0.548
4.1 -3.75 16.0 2.52 3.18 1.32E+06 0.552
4.2 -4.26 15.1 2.39 3.16 1.34E+06 0.55S
4.3 -4.S9 14.4 2.30 3.14 1.37E+06 0.557
4.4 -4.84 13.6 2.19 3.10 1.38E+06 0.558
4.S -4.97 12.9 2.11 3.07 1.40E+06 0.S58
(b) a-Ge:H-Qptical properties of a-Ge:H depend strongly on the amount of hydrogen

content. Figure F3-4 shows the optical absorption spectra of sputter-deposited a-Ge:H
films as measured by Connell and Pawlik [3]. Hydrogen incorporation was made by
adding a partial pressure of H2 to Ar. The effect of hydrogen incorporation on the opti-
cal spectrum below 0.5 eV is twofold: absorption peaks develop near 0.07 and 0.23 eV,
but the background absorption and long-wavelength refractive index decrease [3]. The
0.23-eV absorption peak can be deconvoluted into two components centered at 0.23
and 0.245 e V. The absorption at 0.23 eV is attributed to the monohydride (Ge-H)
stretching mode, and that at 0.245 eV is attributed to the dihydride (Ge-H2) stretching
mode [11]. The 0.07-eV absorption peak is considered to be due to the Ge-H bending-
scissors mode.
As seen in Fig. F3-4, the fundamental absorption edge of a-Ge:H depends to a great
extent on the hydrogen content C(H), i.e, showing a blue shift of the fundamental ab-
sorption edge with increasing C(H) from 0 to 8 at.%. It has also been shown [12] that
increasing C(H) increases the optical gap by about 0.4 eV, sharpens the absorption tail
by a factor of two, and decreases bond angle fluctuations by 2°. Hydrogen is, thus, con-
sidered to affect the optical edge by decreasing network disorder.
SE has been used to investigate the optical properties of a-Ge:H [13-15]. Figure F3-
5 shows, as an example, the E(E) spectra for glow-discharge-deposited a-Ge:H on c-Si
6
•• 6
l 6tt.".· a 0
//.. i·
Ie /. x 6.
a 0
a 0
..
u a 0
~ 103 a 0
l-
~ aa 8
Z
W
u • •••• 6f Jl8
i:i: ri' ~e
.,1
6
lL. ,f. x 66
W x.
8 I
6 CI ••
//
I
I /0/
I. I . / 0,
I
I ./ 0 I
/./ o·
,-'I • I
_._.-' 0 I
• I
• I i
• •• III I a-Ge:H
, i
100 12
Figure F3-4 Absorption spectra of a-Ge:H films deposited by rf sputtering. From left to right,
the hydrogen content C(H) is 0 (solid circles), 1.0, 2.8, 3.0, 5.1, and 8.0 at.% (open circles).
Error estimates on C(H)=O and 8 at.% data are shown by the dashed and dash-dotted lines, re-
spectively. (From Connell and Pawlik [3].)
F3 a-GERMANlliM (a-Ge) 679
20 22
20
15
18
10 /0 16
EI / Ez
/ 14
/
12
a-Ge:H 10
-5 8
1.5 4.5
Figure F3·5 Pseudodielectric-function spectra of a-Ge:H films glow-discharge-deposited on c-

Si. The hydrogen content C(H) is from less than 0.5 «0.5) to 13.0 at.%. (From Blanco et al.
(14].)
[14]. It has been concluded [15] that hydrogenation has similar effects on the optical
properties of amorphous Ge as it does on those of amorphous Si. In particular, one ob-
serves an increase in the optical gap, an increase in the energy position of the ~ peak,
and a shift to higher energies of the function which describes the number of electrons
per atom contributing to optical absorption [see Eq. (1.29)].
REFERENCES
1. Y. Kuwano, in Plasma Deposited Thin Films, edited by J. Mort and F. Jansen

(CRC Press, Florida, 1986), p. 161.
2. D. Goldschmidt, Thin Solid Films 90,139 (1982).
3. G. A. N. Connell and J. R. Pawlik, Phys. Rev. B 13.787 (1976).
4. M. H. Brodsky and A. Lurio, Phys. Rev. B 9,1646 (1974).
5. M.-L. Theye. Mat. Res. Bull. 6, 103 (1971).
6. M. N. Afsar. D. D. Honijk, W. F. Passchier. and J. Goulon, IEEE Trans. Micro.
Theor. Tech. MTT-25. 505 (1977).
7. M.-L. Theye, Opt. Commun. 2,329 (1970).
8. J. M. del Pozo and L. Diaz, Solid State Commun. 87, 5 (1993).
9. T. M. Donovan, W. E. Spicer, J. M. Bennett, and E. J. Ashley, Phys. Rev. B 2,397
(1970).
10. G. A. N. Conell, R. J. Temkin, and W. Paul,Adv. Phys. 22,643 (1973).

11. J. S. Payson and R. C. Ross, J. Non-Cryst. Solids 77&78, 579 (1985).
12. P. D. Persans, A. F. Ruppert, S. S. Chan, and G. D. Cody, Solid State Commun. 51,
203 (1984).
13. A. M. Antoine, B. Drevillon, and P. R. 1. Cabarrocas, J. Non-Cryst. Solids 77&78,
769 (1985).
14. J. R. Blanco, P. J. McMarr, and K. Vedam, J. Appl. Phys. 60,3724 (1986).
15. S. B. White and D. R. McKenzie, Appl. Opt. 27, 3344 (1988).
F4 a-SILICON-CARBON
(a-Si 1_xCx)

Hydrogenated amorphous silicon-carbon alloy (a-Sil_xCx:H) is an attractive material for
application to various optoelectronic devices, such as solar cells, image pickup tubes,
and luminescent devices (see Ref. [1]). Among the different techniques, those based on
plasma-enhanced CVD are extensively used for the growth of a-Sil_xCx:H films. Both
standard rf and electron cyclotron resonance deposition techniques are also being ex-
tensively investigated. In a-Sil_xCx:H, the energy gap and thus its electronic and optical
properties can be continuously changed by controlling the alloy composition [2-7]
and/or hydrogen content [8,9]. As in a-Si, hydrogen incorporation in amorphous sili-
con-carbon alloy reduces the density of defect states with corresponding changes in the
optical properties (see Ref. [l D.

Far-IR optical properties of a-Sil_xCx:H have been studied by a number of groups
[1,5,7-11]. We show in Fig. F4-l the IR absorption spectra measured by Gomez et al.
[5]. The strongest peak at 780 cm-I is attributed to the Si-C stretching mode [1,5,7-11].
In the large wave-number side of this band, two shoulders can be recognized at 907 and
975 cm-I • The frrst one, at 907 cm-I , may be related to a degenerate mode of the Si-H3
bond [5], while the second one, at 975 cm- I , is normally associated with wagging mode
of the C-Hn bond [1,5,8,10]. An absorption band peaking at -2900 cm-I is attributed to
C-Hn stretching vibrations [1,7,8,10]. A peak centered at 2100 cm- I is attributed to the
Si-Hn stretching vibrations [1,5,7-10]. In a-Si:H (see Sec. F2), a doublet was observed
at 2000 and 2100 cm-I and identified as stretching vibrations of the Si-H and Si-H2
bonds, respectively. In hydrogen-rich films, two absorption peaks centered at 1250 and
1350 cm- I also appeared and they were attributed to C-H bonds [8]. The narrow peak
observed at 610 cm- I in Fig. F4-l comes from the Si-Si bond corresponding to the net-
work vibration of the (100)Si substrate.
Anderson and Spear [2] measured the optical absorption spectra of glow-discharge-
deposited a-Sil_xCx:H films (x=0.65) at various substrate temperatures T,. Their obtained
results are shown in Fig. F4-2 [2]. Curves A, B, and C are typical (a.hOO)lfl vs. hoo
graphs for specimens prepared at Ts=400, 600, and 800 K, respectively. Curves D and E
were obtained by Fagen (see Ref. [2]) on sputtered material, E as-deposited and Dafter
681
a-S i C Si-CJ Si-8i
Si-H3 J J
CHnJ
Si-H
J n
. ..........
~ .......
~
-----"""'
........
.
w
U
z ..................
«
(l) ...... ..........
....... .. '
0:::
o
(f)
(l)
«
.. ' .'
3000 500
WAVENUMBER (cm- 1 )
Figure F4-1 IR transmission spectra of a-Si1"Cx:H layers deposited on (lOO)Si substrates by
electron cyclotron resonance plasma at temperatures below 150°C with the gas flow ratio
r=[CH4]/[SiH4] from 0.66 to 8 (solid lines). The IR reflection spectra are also shown by the
broken lines (r=0.66-4). (From Gomez et al. [5].)
annealing at 900 K. We can see that the optical gap Eo occurs at appreciably higher en-
ergies than that for the as-deposited sputtered material (curve E). Annealing of a sput-
tered specimen shifts Eo towards higher energies (curve D) whereas, in the glow-
discharge-deposited films, increasing T, has the opposite effect. In Ar-sputtered a-Si
films [12], the absorption edge moved toward higher photon energies with increasing
annealing temperature. The decreasing spin density which accompanies the shift in the
absorption edge suggests that this behavior results from a reduction in the density of
gap states when some of the structural defects, probably associated with multivacancies
F4 a-SILICON-CARBON (a-Sil_xC.) 683
J
500 • J
/
• •
•
I I
•
(x=O.65) ,•/ •I
~~ ~}C\J
,--.3 E • •I
• j
I
u 400
+~\C\J
15 ><:;
'--"
./ !
~C ~ B •I
/ fA
•
300 D i 1 •
I
I
rj j •
f
•
II / I
• • (•
It.',
,'/ I.1
200 •
•
I
I
rt
I I
~
.'
fl•
,' ], / J,•
I ':'
100
,. I'· , .I,
I /-/,?,' I.l ,
I., I
, , ,/ I
1.0 2.0 3.0 4·0

Photon energy (eV)
Figure F4·2 (CJ11ro)l12 vs. liro plots for glow-discharge-deposited a-Sil_xC.:H films (x=O.65) at
substrate temperatures T,=400 (A), 600 (B), and 800 K (C), respectively. Curves D and E were
obtained on sputtered material, E as-deposited and D after annealing at 900 K. (From Anderson
and Spear [2].)
are annealed out. Similar behavior can be expected for sputtered Si-C alloy (curves D
and E in Fig. F4-2). In glow-discharge films, on the other hand, the larger loss of hy-
drogen may occur at higher substrate temperature T,. This may cause a decrease in the
optical gap Eo with increasing T" as observed in a-Si:H.
The tendency of Si atoms to bond preferentially to C atoms leads to so-called
"chemical bonding," complete in the case of the silicon carbide structure in which only
Si-C bonds occur. Mui and Smith [13] studied theoretically the effects of chemical
ordering on the dielectric function of a-Sil-xCx based upon a scaling law of Aspnes et al.
[14]. They considered three different types of chemical ordering [13]: (1) complete
chemical ordering with homogeneous dispersion, (2) complete chemical ordering with
phase separation, and (3) no chemical ordering. If the Si-C bonds are randomly disper-
sed throughout the film, then the chemical ordering is said to be homogeneous. If, how-
ever, they are clustered, then in addition to chemical ordering there is also phase sepa-
ration.
Reflectance and transmittance measurements have been performed to determine the
optical constants of a-Si1_xCx:H films prepared by rf glow-discharge decomposition of
SiH4 and ~H2 (x=O-1.O) [4] and of SiH4 and CH4 (x=O.26 and 0.39) [15]. The optical
data in Ref. [4] conflrmed the existence of chemical ordering with homogeneous dis-
persion [4]. The data in Ref. [15] also confirmed a high degree of chemical ordering
although no determination of its type was made (homogeneous or phase separated)
[15].
SE study has been performed on a-Si1_xCx:H films with x-O.5 deposited by electron
cyclotron resonance plasma [5,10], withx=O-O.22 deposited by plasma-enhanced CVD
[6], with x-0.55 deposited by rf sputtering [16], and with x-0.05 deposited by plasma-
enhanced CVD [17]. Figure F4-3 shows, as an example, the pseudodielectric functions
at 200°C of a-Si1_xCx:H films deposited by plasma-enhanced CVD [6]. The solid lines
25
0 x=O
0 x=0.05
20 x=0.10
"
v x=0.22
15
W
10
5
a-S i l-xCx
O~--+---+----t----t-----j
25
20 Figure F4-3 Pseudodi-

electric functions at 200°C
of a-Si1_xC.:H films de-
cS 15 posited by plasma-
enhanced CVD. The solid
10 lines represent the best fits
to the formulas of Ref. [18].
(From Kim et al. [6].)
5
OL------..:~L-_._l _ _- - L_ _- - L_ _---'
2.0 2.5 3.0 3.5 4.0 4.5

PHOTON ENERGY (eV)
F4 a-SILICON-CARBON (a-Si1...C.) 685
in the figure represent the best fits to the formulas of Ref. [18]. We can recognize a sin-
gle broad peak in £Z(E) that is typically observed in tetrahedrally-bonded amorphous
semiconductors.
The SE £(E) data measured by Kalomiros et al. [16] were found to be in sufficient
agreement with the calculated results assuming no chemical ordering [13]. Note that
this conclusion is in direct contrast to those of Refs. [4,15]. Further, the experimental
£(E) values reported in Ref. [4] are generally lower than those in Ref. [16]. The rela-
tively low values of the optical constants in Ref. [4] may be a result of excess hydro-
genation, or may be due to the effect of surface microroughness.
Gomez et al. [10] reported that rapid thermal annealing leads to nearly complete de-
hydrogenation of the a-Sil ...C.:H layers as deduced from SE and IR spectroscopy. On
the contrary, Janowitz et al. [19] studied the effects of ex-situ hydrogenation of rf-
sputtered a-Sil"'C, films in a rf hydrogen glow discharge using SE and found a drastic
change in £(E) which can be explained by the formation of a surface hydrogenated
polycrystalline carbon layer with a small oxygen content [20].
REFERENCES
1. D. Girginoudi and A. Thanailakis, J. Appl. Phys. 69, 1490 (1991).
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(1979).
4. K. Mui, D. K. Basa, F. W. Smith, and R. Corderman, Phys. Rev. B 35, 8089
(1987).
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6. S. Kim, J. S. Burnham, J. Koh, L. Jiao, C. R. Wronski, and R. W. Collins, J. Appl.
Phys. 80, 2420 (1996).
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9. A. Matsuda, T. Yamaoka, S. Wolff, M. Koyama, Y. Imanishi, H. Kataoka, H.
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10. F. J. Gomez, J. Garrido, J. Martinez, and J. Piqueras, J. Electrochem. Soc. 143,
271 (1996).
11. F. J. G6mez, P. Prieto, E. Elizalde, and J. Piqueras, Appl. Phys. Lett. 69, 773
(1996).
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(1970).
13. K. Mui and F. W. Smith, Phys. Rev. B 35, 8080 (1987).
14. D. E. Aspnes, A. A. Studna, and E. Kinsbron, Phys. Rev. B 29, 768 (1984).
15. G. B. Smith and D. R. McKenzie, J. Appl. Phys. 65, 1694 (1989).

16. J. A. Kalomiros, A. Papadopoulos, S. Logothetidis, L. Magafas, N. Georgoulas,
and A. Thanailakis, Phys. Rev. B 49, 8191 (1994).
17. H. Fujiwara, J. Koh, Y. Lee, C. R. Wronski, and R. W. Collins, J. Appl. Phys. 84,
2278 (1998).
18. A. R. Forouhi and I. Bloomer, Phys. Rev. B 34, 7018 (1986).
19. C. Janowitz, J. A. Kalomiros, A. Ginoudi, E. C. Paloura, and R. L. Johnson, Solid
State Commun. 99, 29 (1996).
20. J. A. Kalomiros, E. C. Paloura, A. Ginoudi, S. Kennou, S. Ladas, Ch. Uoutas, N.
Vouroutzis, G. Voutsas, D. Girginoudi, N. Georgoulas, and A. Thanailakis, Solid
State Commun. 96, 735 (1995).
F5 a-GALLIUM PHOSPHIDE
(a-GaP)
FS.l GENERAL REMARKS

The fundamental absorption edge of amorphous gallium phosphide (a-GaP) is about I
eV, which is considerably smaller than that of c-GaP (-2.25 eV at 300 K). Amorphous
GaP film is, thus, nontransparent and metallic in appearance. It has been shown [1] that
incorporation of hydrogen of 90 mol. % increases the absorption edge· by about 0.6 eV
and electrical resistivity by four orders. The drift mobilities of photoelectrons and
photoholes in hydrogenated amorphous GaP (a-GaP:H) have also been measured to be
2.3xlO-3 and 1.3xlO-3 cm2N·s at 3000 K, respectively [2].
FS.2 OPTICAL CONSTANTS

Optical properties in the region below the fundamental absorption edge of a-GaP de-
pend strongly on preparation techniques and conditions [3]. Far-IR optical spectra of
some III - V amorphous semiconductors, including a-GaP, have been measured by Pretti
et al. [4]. The samples used were prepared by rf sputtering in an Ar atmosphere. The IR
absorption spectra were found to reflect reasonably well the phonon density of states.
The absorption spectra at the fundamental absorption edge of rf-sputtered and flash-
evaporated a-GaP have been reported [3,5]. The effects of stoichiometry have been
discussed [5]. The refractive indices of a-GaP films deposited at different temperatures
are also reported [3].
The fundamental reflectivity spectrum of a-GaP has been measured by Stuke and
Zimmerer [6]. The sample was obtained by evaporating the Ga-P components sepa-
rately. By performing the KK analysis, the (£1' £z) data were extracted in the photon-
energy range between 0 and 12 eV. Gheorghiu and Theye [5] also reported the £(E)
spectra between 0.5 and 6 eV of a-GaP films flash-evaporated at 140 K and annealed at
300 and 570 K. The data of Gheorghiu and Theye give a maximum value of £Z-16.5 at
E-4.0 eV for sample annealed at 300 K. This value is considerable larger than that of
Stuke and Zimmerer [6] (£Z-14.0 at -3.6 eV). It should be noted that the dielectric
function exhibiting the largest Ez is most representative of a bulk, dense (Le., void-
and/or roughness-free) sample.
An experimental determination of the absorption spectra of some III-V amorphous
semiconductors, including a-GaP, has been made in the region from 15 to 40 eV by
Gudat et al. [7]. The samples were obtained by flash evaporation. The spectrum for a-
687
GaP showed a weak structure at -21 eV [d (Ga)]. Optical properties in the far-IR [8]
and near-IR-visible regions of a-GaP:H [1,9] have also been reported.
Table F5-1 lists the room-temperature values of £=el+i~, n*=n+ik, <x, and R for a-
GaP. They were obtained for Eg).0421 eV from PrettI et al. [4] and for 0.5Q':S;6.0 eV
from Gheorghiu and Theye [5] (flash-evaporated at 140 K and annealed subsequently
at 300 K). The imaginary optical constants, k and <x, for F217 eV were taken from Gu-
dat et al. [7].
The (e l, ~, (n, k), and <X values in Table F5-1 are plotted in Figs. F5-1-F5-3, re-
spectively.
REFERENCES
1. N. Matsumoto and K. Kumabe, lpn. l. Appl. Phys. 18, 1011 (1979).
2. M. Onuki and H. Kubota, lpn. l. Appl. Phys. 26, 1404 (1987).
3. N. Elgun and E. A. Davis, l. Phys.: Condens. Matter 6,779 (1994).
4. W. PrettI, N. J. Shevchik, and M. Cardona, Phys. Status Solidi B 59,241 (1973).
5. A. Gheorghiu and M.-L. Theye, Phil. Mag. B 44, 285 (1981).
6. J. Stuke and G. Zimmerer, Phys. Status Solidi B 49, 513 (1972).
Solidi B 52, 505 (1972).
8. Z. P. Wang, L. Ley, and M. Cardona, Physica 117B&118B, 968 (1983).
9. J. C. Knights and R. A. Lujan, l. Appl. Phys. 49,1291 (1978).
a-GaP
15
10
2 4 6 8
Photon energy (eV)
Figure FS·l £1(E) and q(E) spectra for a-GaP at 300 K.
F5 a-GALLIUM PHOSPHIDE (a-GaP) 689
a-GaP
4
n
2
k
o 2 4 6 8
Photon energy (eV)
Figure FS-2 nCE) and kCE) spectra for a-GaP at 300 K.
106 a-GaP
105
~
5 104
'-"
~
<:j
103
102
101~~~~~~~~cl-~~
10-2 10-1 100 10 1 102
Photon energy (eV)
FigureFS-3 aCE) spectrum for a-GaP at 300 K.
Table FS·l Optical constants of a-GaP at 300 K.

eV £1 ~ n k a (cm· 1) R
0.0174 0.060 1.06E+02
0.0198 0.180 3.63E+02
0.0223 0.312 7.06E+02
0.0248 0.398 l.ooE+03
0.0297 0.524 1.58E+03
0.0347 0.634 2.23E+03
0.0372 0.786 2.96E+03
0.0384 0.842 3.28E+03
0.0409 0.871 3.6IE+03
0.0434 0.767 3.38E+03
0.0459 0.570 2.65E+03
0.0483 0.312 1.53E+03
0.0508 0.194 l.ooE+03
0.0533 0.121 6.56E+02
0.0558 0.086 4.88E+02
0.5 12.58 3.547 0.314
0.6 12.71 3.565 0.316
0.7 12.86 0.106 3.586 0,015 1.05E+03 0.318
0.8 13.11 0.214 3.621 0.030 2.40E+03 0.322
0.9 13.39 0.361 3.659 0.049 4.50E+03 0.326
1 13.70 0.584 3.702 0.079 8.ooE+03 0.330
1.2 14.40 1.095 3.797 0.144 1.75E+04 0.341
1.4 15.10 2.001 3.894 0.257 3.65E+04 0.352
1.6 15.65 3.121 3.976 0.392 6.37E+04 0.362
1.8 16.11 4.367 4.049 0.539 9.84E+04 0.372
2 16.36 5.801 4.106 0.706 1.43E+05 0.382
2.2 16.35 7.299 4.138 0.882 1.97E+05 0.391
2.4 16.07 8.859 4.149 1.068 2.60E+05 0.400
2.6 15.35 10.29 4.113 1.251 3.30E+05 0.406
2.8 14.47 11.70 4.067 1.439 4.08E+05 0.414
3 13.29 13.06 3.995 1.635 4.97E+05 0.421
3.2 11.96 14.32 3.912 1.830 5.94E+05 0.431
3.4 10.45 15.30 3.806 2.010 6.93E+05 0.439
3.6 8.872 16.06 3.689 2.176 7.94E+05 0.448
3.8 7.248 16.40 3.548 2.311 8.90E+05 0.455
4 5.587 16.49 3.391 2.431 9.86E+05 0.462
4.2 4.002 16.11 3.209 2.509 1.07E+06 0.465
4.4 2.517 15.57 3.024 2.574 1.15E+06 0.470
4.6 1.107 14.79 2.823 2.619 1.22E+06 0.474
4.8 0.000 13.72 2.619 2.619 1.27E+06 0.475
5 -0.956 12.58 2.415 2.605 1.32E+06 0,476
5.2 -1.762 11.45 2.216 2.583 1.36E+06 0,479
5,4 -2.29 10.50 2.056 2.553 1,40E+06 0,481
5.6 -2.643 9.513 1.901 2.502 1,42E+06 0.482
5.8 -2.794 8.607 1.768 2,433 1.43E+06 0.479
6 -2.894 7.802 1.647 2.368 I.44E+06 0,478
17 0.337 5.80E+05
18 0.289 5.27E+05
19 0.244 4.70E+05
19.8 0.224 4.50E+05
F5 a-GALLIUM PHOSPHIDE (a-GaP) 691
Table F5·1 Continued (a-GaP).

eV n k R
20 0.223 4.52E+05
20.7 0.220 4.61E+05
21 0.216 4.60E+05
22 0.193 4.30E+05
24 0.142 3.45E+05
26 0.110 2.90E+05
28 0.090 2.55E+05
30 0.079 2.39E+05
32 0.071 2.30E+05
34 0.066 2.28E+05
36 0.063 2.31E+05
38 0.062 2.37E+05
F6 a-GALUUM ARSENIDE
(a-GaAs)

Many studies have been devoted to crystalline gallium arsenide (c-GaAs) because of its
many applications in devices, e.g., laser diodes and high-speed transistors. On the other
hand, fewer studies have been done on amorphous GaAs (a-GaAs) which could be used
in photovoltaic applications, nuclear particle detectors, and transistor devices. It should
be noted that in preparing amorphous III-V compounds, a careful control is necessary
to obtain stoichiometric compositions (see, e.g., Ref. [1] for a-GaAs).

Far-IR optical spectra of some III-V amorphous semiconductors, including a-GaAs,
have been measured by Prettl et al. [2]. The samples were deposited by rf sputtering in
an Ar atmosphere. The absorption spectra measured were found to reflect reasonably
well the phonon density of states (see Fig. 2.17 in Sec. 2.2.2).
Optical absorption at the fundamental absorption edge of a-GaAs has been investi-
gated by several authors [1,3,4]. The optical band gap of stoichiometric a-GaAs deter-
mined in this study was -1.0 eV. The effects of stoichiometry [1] and heat treatment
[3,4] have also been discussed.
The fundamental reflectivity spectrum of vacuum-evaporated a-GaAs has been
measured by Stuke and Zimmerer [5]. The sample was obtained by evaporating the
Ga-As components separately. By performing the KK analysis, the (e1, eJ values were
extracted in the photon-energy range between 0 and 12 eV. Gheorghiu and Theye [3]
also reported the e(E) spectra between 0.5 and 6 eV of a-GaAs films flash-evaporated
at 100 K and annealed at 300 and 515 K. The data of Gheorghiu and Theye give a
maximum value of ~-I7.0 at E-3.4 eV for sample annealed at 300 K. This value is
considerable larger than that of Stuke and Zimmerer [5] (~-I5.6 at -3.4 eV). It should
be noted that the dielectric function exhibiting the largest ~ is most representative of a
bulk, dense (Le., void- and/or roughness-free) sample.
Absorption spectra of some III-V amorphous semiconductors, including a-GaAs,
have been measured in the region from 15 to 40 eV by Gudat et al. [6]. The samples
used were obtained by flash evaporation. The spectrum for a-GaAs showed a weak
structure at -21 eV [d (Ga)].
It is well known that an energetic ion leaves a trail of defects and dislocations in an
692
F6 a-GALLIUM ARSENIDE (a-GaAs) 693
otherwise perfect crystal. At sufficiently high-ion fluencies, the damage tracks and the
crystalline solid becomes indistinguishable from amorphous material prepared in other
ways. Several reports have been published describing the optical properties of ion-
implanted GaAs [7-14]. The maximum ~ value of -16.7 at E-3.4 eV was obtained
from As+-ion-implanted GaAs with a fluence of lx1014 cm-2 at an energy of 270 keY
[9]. Note that this value is slightly smaller than the flash-evaporated a-GaAs value of
Gheorghiu and Theye [3] (~-17.0 at E-3.4 eV). Optical properties in the far-IR
[15-17] and near-IR-visible regions [17-22] of hydrogenated amorphous GaAs (a-
GaAs:H) have also been investigated.
We list Table F6-1 the room-temperature values of £=£I+i~, n*=n+ik, a, and R for
a-GaAs. They were obtained for Eg).0496 eV from Pretti et al. [2] and for 0.5SE$;6.0
eV from Gheorghiu and Theye [3] (flash-evaporated at 100 K and annealed subse-
quently at 300 K). The imaginary optical constants, k and a, for &16 eV were taken
from Oudat et al. [6].
The (£1' £Z), (n, k), and a values in Table F6-1 are shown in Figs. F6-1-F6-3, respec-
tively.
REFERENCES
1. N. Matsumoto and K. Kumabe, Jpn. J. Appl. Phys. 19, 1583 (1980).

2. W. Pretti, N. J. Shevchik, and M. Cardona, Phys. Status Solidi B 59,241 (1973).
3. A. Gheorghiu and M.-L. Theye, Phil. Mag. B 44, 285 (1981).
4. M. L. Theye, A. Oheorghiu, K. Driss-Khodja, and C. Boccara, J. Non-Cryst. Sol-
ids 77&78,1293 (1985).
5. J. Stuke and O. Zimmerer, Phys. Status Solidi B 49,513 (1972).
Solidi B 52, 505 (1972).
7. V. Grasso, G. Mondio, G. Saitta, S. U. Campisano, O. Foti, and E. Rimini, Appl.
Phys. Lett. 33,632 (1978).
8. D. E. Aspnes, S. M. Kelso, C. O. Olson, and D. W. Lynch, Phys. Rev. Lett. 48,
1863 (1982).
9. M. Erman, J. B. Theeten, P. Chambon, S. M. Kelso, and D. E. Aspnes, J. Appl.
Phys. 56,2664 (1984).
10. O. F. Feng and R. Zallen, Phys. Rev. B 40,1064 (1989).
11. G. F. Feng, R. Zallen, J. M. Epp, and J. G. Dillard, Phys. Rev. B 43, 9678 (1991).
12. S. Adachi, J. Appl. Phys. 69, 7768 (1991).
13. K. L. Bhatia, Ch. Wilbertz, G. Derst, and S. Kalbitzer, Radiat. Elf. De/. Solids 128,
341 (1994).
14. J. Mudron, J. Mtillerova, and F. Dubeckj, Solid-State Electron. 42,243 (1998).
15. F. Euler, J. J. Comer, and C. A. Bergeron, J. Electron. Mater. 4,481 (1975).
17. J. Bandet, J. Frandon, G. Bacquet, K. Aguir, K Despax, and A. Hadidou, Phil.

Mag. B 58, 645 (1988).
18. Th. Flohr and R. Helbig, 1. Non-Cryst. Solids 88, 94 (1986).
19. K. Aguir, M. Hadidou, P. Lauque, and B. Despax, l. Non-Cryst. Solids 113, 231
(1989).
20. M. 1. Manssor and E. A. Davis, 1. Phys.: Condens. Matter 2, 8063 (1990).
21. A. Carbone, F. Demichelis, G. Kaniadakis, F. Gozzo, R. Murri, N. Pinto, L.
Schiavulli, G. D. Mea, A. Drigo, and A. Paccagnella, Nuovo Cimento D 13, 571
(1991).
22. R. Murri and N. Pinto, 1. Non-Cryst. Solids 164-166, 889 (1993).
a-GaAs
20
15
I.U 10
Photon energy (eV)

Figure F6-1 £1(E) and £2(E) spectra for a-GaAs at 300 K.
a-GaAs
5
n
4
..!:oI::
c: 3
2
k
1
o 1 2 43 5
Photon energy (eV)
Figure F6-2 n(E) and k(E) spectra for a-GaAs at 300 K.
106 a-GaAs
1~10_2 10-1 100 101 102

Photon en"ergy (eV)
Figure F6-3 fJ.(E) spectrum for a-GaAs at 300 K.
696 AMORPHOUS SEMICONDUcrORS
Table F6-1 Optical constants of a-GaAs at 300 K.

eV £1 ~ n k aCem- l ) R
0.0099 0.161 1.62E+02
0.0149 0.248 3.74E+02
0.0198 0.352 7.07E+02
0.0248 0.583 1.46E+03
0.0297 1.316 3.97E+03
0.0322 1.682 5.49E+03
0.0347 0.999 3.52E+03
0.0397 0.126 5.05E+02
0.0446 0.047 2. 12E+02
0.0496 0.080 4.00E+02
0.5 14.64 3.826 0.343
0.6 14.80 3.847 0.345
0.7 15.19 3.897 0.350
0.8 15.46 0.126 3.932 0.016 1.30E+03 0.353
0.9 15.83 0.279 3.979 0.035 3.2OE+03 0.358
1 16.27 0.637 4.034 0.079 8.00E+03 0.363
1.1 16.87 0.%2 4.109 0.117 1.30E+04 0.371
1.2 17.46 1.484 4.182 0.177 2. 16E+04 0.378
1.4 18.30 3.167 4.294 0.369 5.23E+04 0.390
1.6 18.72 5.287 4.368 0.605 9.82E+04 0,401
1.8 18.58 7.382 4.391 0.840 1.53E+05 0.410
2 18.08 9.389 4.385 1.0-71 2. 17E+05 0.418
2.2 17.21 11.21 4.344 1.290 2.88E+05 0.425
2.4 15.99 12.72 4.267 1.490 3.63E+05 0.430
2.6 14.69 14.21 4.191 1.6% 4.47E+05 0.438
2.8 13.09 15.42 4.082 1.889 5.36E+05 0.445
3 11.35 16.21 3.945 2.054 6.25E+05 0.450
3.2 9.551 16.70 3.794 2.200 7. 14E+05 0.455
3.4 7.668 16.96 3.625 2.339 8.06E+05 0.460
3.6 5.636 16.93 3.427 2.471 9.02E+05 0.467
3.8 3.840 16.46 3.220 2.555 9.84E+05 0.471
4 2.120 15.84 3.008 2.632 1.07E+06 0.477
4.2 0.648 14.% 2.795 2.677 1.14E+06 0.482
4.4 -0.623 13.97 2.584 2.702 1.21E+06 0.487
4.6 12.84
4.8 11.92
5 10.90
5.2 9.925
5.4 9.102
5.6 8.204
5.8 7.357
6 6.584
16 0.2% 4.80E+05
18 0.225 4.lOE+05
19.3 0.181 3.55E+05
20 0.179 3.63E+05
20.5 0.177 3.67E+05
21 0.169 3.60E+05
22 0.152 3.40E+05
24 0.116 2.83E+05
Table F6-1 Continued (a-GaAs).
eV £1 £2 n k ex (cm·l ) R
26 0.091 2.40E+05
28 0.073 2.07E+05
30 0.061 1.85E+05
32 0.053 1.72E+05
34 0.049 1.70E+05
36 0.047 1.71E+05
F7 a-GALLIUM ANTIMONIDE
(a-GaSb)

Amorphous gallium antimonide (a-GaSb) does not have at the moment specific tech-
nological applications; consequently little research has been done as compared with its
crystalline counterpart.

Optical properties in the far-IR region of some III-V amorphous semiconductors, in-
cluding a-GaSb, have been studied by Prettl et al. [I]. The samples used were deposited
by rf sputtering in an At atmosphere. A strong absorption band centered at -200 cm-I ,
somewhat less than the TO phonon frequency of c-GaSb (0010-224 em-I), was ob-
served.
The optical absorption spectra at the fundamental absorption edge of a-GaSb were
measured by Dias da Silva et al. [2]. The stoichiometric and Sb-rich samples were pre-
pared in a specially designed flash-evaporation apparatus. The optical gap Eo and Ur-
bach parameter Eu obtained for stoichiometric a-GaSb were, respectively, 0.58 eV and
0.15 eV; for Sb-richer samples smaller Eo and larger Eu values were obtained. Naidu
and Reddy [3] also reported the Eo values of -0.7-0.8 and -0.9 eV for as-deposited and
annealed a-GaSb films, respectively, deposited by vacuum evaporation.
The fundamental reflectivity spectrum of vacuum-evaporated a-GaSb has been
measured by Stuke and Zimmerer [4] and by Gheorghiu et al. [5]. By performing the
KK analysis, the (CI' E0 values were extracted in the photon-energy ranges 0-12 eV [4]
and 0.5-6.0 eV [5]. We note that the maximum ~ value of -22.0 at E-2.3 eV observed
in Ref. [4] is slightly larger than that reported in Ref. [5] (-21.7). The effects of thertnal
annealing on IR-UV spectra of a-Gal_xSbx (x~0.50) have also been reported [2].
Absorption spectra of some III-V amorphous semiconductors, including a-GaSb,
have been measured in the region from 15 to 40 eV by Gudat et al. [6]. The samples
used were deposited by flash evaporation. The spectrum for a-GaSb showed a weak
structure at -21 eV [d (Ga)].
Optical properties in the far-IR region of hydrogenated amorphous GaSb (a-GaSb:H)
have been reported [7]. Optical properties of W-ion-implanted GaSb damaged layers as
a function of annealing temperature have also been studied using SE [8].
Table Fl-l lists the room-temperature values of c=cI+i~, n*=n+ik, a, and R for a-
698
F7 a-GALLIUM ANTIMONIDE (a-GaSb) 699
GaSb. They were obtained for Eg).0471 eV from PrettI et al. [1] and for 0.2Q'~12 eV
from Stuke and Zimmerer [4]. The imaginary optical constants, k and a, for D-16 eV
were taken from Gudat et al. [6].
The (£1'~' (n, k), and a values in Table F7-1 are shown in Figs. F7-1-F7-3, respec-
tively.
REFERENCES
1. W. PrettI, N. J. Shevchik, and M. Cardona, Phys. Status Solidi B 59,241 (1973).
2. J. H. Dias da Silva, J. I. Cisneros, M. M. Guraya, and G. Zampieri, Phys. Rev. B
51,6272 (1995).
3. B. S. Naidu and P. J. Reddy, Thin Solid Films 61, 379 (1979).
5. A. Gheorghiu, T. Rappeneau, J. P. Dupin, and M. L. Theye, J. Phys. Colloq. 42,
C4-881 (1981).
Solidi B 52, 505 (1972).
8. Yu-X. Zheng, Y.-H. Qian, L.-Y. Chen, S.-M. Zhou, Ya-D. Wang, C.-Lu Lin, Z.-P.
He, and An-S. Zheng, Solid State Commun. 96, 593 (1995).
32
28
a-GaSb
24
20
16
w
12
8
4
0
-4 2
0 4 6 8 10 12
Photon energy (eV)
Figure F7-1 £l(E) and £2(E) spectra for a-GaSb at 300 K.
5 a-GaSb
4
~
r:: 3
2
0 2 4 6 8 10 12
Photon energy (eV)
Figure F7-2 neE) and k(E) spectra for a-GaSb at 300 K.
107
106
105
'I
r
-~
<:S
104
103
102 a-GaSb
1 ~10-2 10-1 100 101 102

Photon energy (eV)
Figure F7 -3 ~E) spectrum for a-GaSb at 300 K.
F7 a-GALLIUM ANTIMONIDE (a-GaS b) 701
Table F7-l Optical constants of a-GaSb at 300 K.
eV £1 ~ n k a (cm·l ) R
0.0124 0.099 1.25E+02
0.0136 0.135 1.87E+02
0.0149 0.223 3.36E+02
0.0174 0.414 7.29E+02
0.0198 0.678 1.36E+03
0.0223 0.936 2. 12E+03
0.0248 1.183 2.97E+03
0.0273 0.901 2.49E+03
0.0297 0.599 1.81E+03
0.031 0.514 1.62E+03
0.0322 0.515 1.68E+03
0.0347 0.567 1.99E+03
0.0372 0.598 2.26E+03
0.0384 0.601 2.34E+03
0.0397 0.617 2.48E+03
0.0409 0.649 2.69E+03
0.0421 0.653 2.79E+03
0.0446 0.686 3.10E+03
0.0471 0.704 3.36E+03
0.2 19.63 4.431 0.399
0.4 21.57 4.644 0.417
0.6 23.60 0.562 4.858 0.058 3.52E+03 0.434
0.8 25.73 3.020 5.081 0.297 2.41E+04 0.452
1 26.44 5.758 5.172 0.557 5.64E+04 0.461
1.2 25.44 9.129 5.121 0.891 1.08E+05 0.465
1.4 23.40 13.06 5.010 1.303 1.85E+05 0.470
1.6 20.90 16.85 4.886 1.725 2.80E+05 0.480
1.8 18.38 19.45 4.750 2.047 3.74E+05 0.490
2 15.09 20.93 4.521 2.314 4.69E+05 0.495
2.2 11.61 21.84 4.262 2.562 5.71E+05 0.502
2.3 9.671 21.98 4.104 2.678 6.24E+05 0.506
2.4 8.317 21.70 3.972 2.731 6.65E+05 0.506
2.6 5.513 20.93 3.685 2.840 7.49E+05 0.509
2.8 3.095 19.87 3.406 2.917 8.28E+05 0.512
3 1.354 18.47 3.152 2.930 8.9IE+05 0.512
3.2 -0.290 16.85 2.878 2.928 9.50E+05 0.512
3.4 -1.354 15.03 2.621 2.867 9.88E+05 0.509
3.6 -2.128 13.50 2.402 2.810 1.03E+06 0.507
3.8 -2.611 12.22 2.223 2.748 1.06E+06 0.504
4 -2.901 11.17 2.078 2.687 1.00E+06 0.502
4.2 -3.095 10.11 1.934 2.614 1.11E+06 0.499
4.4 -3.134 9.059 1.796 2.522 1.12E+06 0.493
4.6 -3.056 8.140 1.679 2.424 1.13E+06 0.485
4.8 -2.998 7.514 1.596 2.355 1.15E+06 0.480
5 -2.911 6.882 1.510 2.279 1.16E+06 0.474
5.5 -2.544 5.478 1.322 2.072 1.16E+06 0.454
6 -2.166 4.424 1.175 1.883 1.15E+06 0.432
6.5 -1.838 3.722 1.075 1.730 1.14E+06 0.411
7 -1.528 3.118 0.986 1.581 1.12E+06 0.388
8 -0.967 2.346 0.886 1.324 1.07E+06 0.332
Table F7·t Continued (a-GaSb).

eV El E2 n k a (cm·1) R
9 -0.542 1.896 0.846 1.121 1.02E+06 0.275
10 -0.193 1.545 0.826 0.936 9.48E+05 0.215
11 0.155 1.264 0.845 0.748 8.34E+05 0.147
12 0.310 1.124 0.859 0.654 7.96E+05 0.115
16 0.229 3.72E+05
17 0.190 3.28E+05
18 0.162 2.95E+05
19 0.142 2.74E+05
20 0.141 2.85E+05
21 0.128 2.72E+05
22 0.114 2.54E+05
24 0.086 2.1OE+05
26 0.068 1.78E+05
28 0.058 1.64E+05
30 0.053 1.60E+05
32 0.051 1.66E+05
F8 a-INDIUM PHOSPHIDE
(a-lnP)
FS.l GENERAL REMARKS

Amorphous indium phosphide (a-InP) is normally prepared by flash-evaporating crys-
talline InP (see, e.g., Ref. [1]) or by evaporating the In-P components separately [2],
but it can also be obtained by ion implantation [3]-which, in principle, yields a better-
quality material with reproducible properties. Although a-InP could be used in some
device applications (photovoltaic devices, nuclear particle detectors, etc.), it remains
relatively unexplored.
FS.2 OPTICAL CONSTANTS

Optical properties in the far-IR-visible region of a-InP have been studied by Baker et
al. [4]. The samples studied were deposited by rf sputtering. InP films sputtered from a
stoichiometric InP target were found to be slightly In rich, containing only 42 at.% P.
Therefore, a few P pieces were added to the target in order to deposit films with com-
positions nearer stoichiometry.
A strong absorption band centered at -280 cm-I was observed for sample sputter-
deposited at a substrate temperature of T.=36°C [4]. This frequency is somewhat less
than the TO phonon frequency of c-InP (001'0-305 cm- I ). Sharpening and a shift to the
position associated with c-InP of -305 cm-I were observed for samples sputter-
deposited at still higher temperatures (T~108°C).
The optical gap Eo (Tauc's gap) for sample sputter-deposited at T.=36°C was about
0.9 eV; increasing T. increased Eo (Eo-1.5 eV at T.=156°C) [4]. The refractive index n
at E=O.5 e V was also found to decrease with increasing T•.
The fundamental reflectivity spectrum of a-InP has been measured by Stuke and
Zimmerer [2]. The a-InP film was obtained by evaporating the In-P components sepa-
rately. By performing the KK analysis, the (EI , Ez) values were extracted in the photon-
energy range 0-12 eV.
semiconductors, including a-InP, has been made in the range between 15 and 40 eV by
Gudat et at. [5]. The samples were obtained by flash evaporation. The spectrum for a-
InP showed a weak structure at -19 eV [d (In)].
Table P8-1 lists the room-temperature values of E=EI+iEz, n*=n+ik, (x, and R for a-
InP. They were taken for 0~:S;12 eV from Stuke and Zimmerer [2] and for ~14 eV
703
from Gudat et ai. [5].

The (£1' ~), (n, k), and a values in Table FS-l are plotted in Figs. FS-I-FS-3, re-
spectively.
REFERENCES
1. M. L. Theye, A. Gheorghiu, D. Udron, C. Senemaud, E. Belin, J. von Bardeleben,
S. Squelard, and J. Dupin, W. Pretti, N. J. Shevchik, and M. Cardona, Phys. Status
Solidi B 59, 241 (1973).
2. 1. Stuke and G. Zimmerer, Phys. Status Solidi B 49,513 (1972).
3. See, for instance, U. G. Akano, I. V. Mitchell, F. R. Shepherd, and C. J. Miner,
Can. f. Appi. Phys. 70, 7S9 (1992).
4. S. H. Baker, S. C. Bayliss, S. J. Gurman, N. Elgun, and E. A. Davis, f. Phys.:
Condens. Matter 8,1591 (1996).
Solidi B 52, 505 (1972).
18~~~~~~~~~~~'
16
a-lnP
14
2 4 6 8 10 12
Photon energy (eV)
Figure F8·1 £'1(E) and £'2(E) spectra for a-InP at 300 K.
F8 a-INDIUM PHOSPHIDE (a-InP) 705
a-lnP
4
3
c:
2
o 2 4 6 8 10 12
Photon energy (eV)
Figure FS-2 n(E) and k(E) spectra for a- InP at 300 K.
a-lnP
103~~~--~~~--~~~
100 101 102
Photon energy (eV)
Figure FS-3 aJ.E) spectrum for a-InP at 300 K.
Table FS·l Optical constants of a-lnP at 300 K.

eV £1 €a n k <X (em·l ) R
0 1.305 1.142 0.004
0.4 1.320 0.620 1.179 0.263 1.07E+04 0.021
0.8 1.350 1.409 1.285 0.548 4.45E+04 0.069
1.2 1.392 2.465 1.453 0.848 1.03E+05 0.137
1.6 1.433 4.014 1.687 ' 1.189 1.93E+05 0.219
2 1.456 6.197 1.978 1.567 3.18E+05 0.301
2.4 1.379 9.296 2.321 2.002 4.87E+05 0.383
2.8 1.175 12.32 2.603 2.367 6.72E+05 0.440
3.2 0.806 14.28 2.749 2.598 8.43E+05 0.471
3.4 0.621 14.44 2.745 2.630 9.06E+05 0.476
3.6 0.456 14.27 2.714 2.629 9.59E+05 0.476
4 0.165 12.82 2.548 2.515 1.02E+06 0.461
4.4 0.000 11.27 2.374 2.374 1.06E+06 0.442
4.8 -0.126 9.578 2.174 2.203 1.07E+06 0.417
5.2 -0.202 8.028 1.978 2.029 1.07E+06 0.391
5.6 -0.223 6.620 1.789 1.850 1.05E+06 0.361
6 -0.219 5.563 1.635 1.701 1.03E+06 0.335
6.4 -0.202 4.732 1.506 1.571 1.02E+06 0.312
6.8 -0.185 4.085 1.397 1.462 1.01E+06 0.291
7.2 -0.159 3.521 1.297 1.357 9.91E+05 0.271
7.6 -0.136 3.056 1.209 1.264 9.74E+05 0.253
8 -0.117 2.676 1.132 1.182 9.59E+05 0.238
9 -0.068 1.986 0.980 1.014 9.25E+05 0.208
10 -0.039 1.606 0.885 0.907 9. 19E+05 0.191
11 -0.010 1.366 0.824 0.829 9.25E+05 0.179
12 0.000 1.211 0.778 0.778 9.47E+05 0.174
14 0.380 5.40E+05
15 0.321 4.88E+05
16 0.268 4.35E+05
17 0.230 3.96E+05
17.5 0.220 3.91E+05
18 0.222 4.05E+05
19 0.229 4.41E+05
19.5 0.223 4.4IE+05
20 0.214 4.34E+05
21 0.193 4. 11E+05
22 0.172 3.84E+05
24 0.127 3.08E+05
26 0.103 2.72E+05
28 0.094 2.66E+05
30 0.084 2.57E+05
32 0.080 2.58E+05
34 0.079 2.71E+05
36 0.080 2.92E+05
38 0.083 3.20E+05
F9 a-INDIUM ARSENIDE
(a-lnAs)

Amorphous indium arsenide (a-InAs) does not have at the moment specific technologi-
cal applications; consequently little work has been done on this material.

Optical properties in the far-IR region of some III-V amorphous semiconductors, in-
cluding a-InAs, have been studied by PrettI et ai. [1]. The samples used were deposited
by rf sputtering in an Ar atmosphere. A strong absorption band centered at -200 cm-I,
somewhat less than the TO phonon frequency of c-InAs (001'0-217 cm-I), was observed.
It was concluded that the absorption spectra reflect reasonably well the phonon density
of states.
Stuke and Zimmerer [2] measured the room-temperature reflectivity spectrum of
vacuum-evaporated a-InAs at nearly normal incidence. The sample was obtained by
evaporating the In-As components separately. By performing the KK analysis, they
reported the (EI, Ez) data in the photon-energy range between 0 and 12 eV.
semiconductors, including a-InAs, has been made in the region from 15 to 40 eV by
Gudat et ai. [3]. The samples were deposited by flash evaporation. The spectrum for a-
InAs showed a weak structure at -19 eV [d (In)].
We list in Table F9-1 the room-temperature values of E=EI+i~, n*=n+ik, <X, and R for
a-InAs. They were taken for Eg).0335 eV from PrettI et ai. [1] and for 0.4$£:512 eV
from Stuke and Zimmerer [2]. The imaginary optical constants, k and <x, for D-14 eV
were taken from Gudat et ai. [3].
The (E I, Ez), (n, k), and <X values in Table F9-1 are shown in Figs. F9-1-F9-3, respec-
tively.
REFERENCES
1. W. Prettl, N. J. Shevchik, and M. Cardona, Phys. Status Solidi B 59,241 (1973).

707

Solidi B 52, 505 (1972).
16 a-lnAs
12
l.U 8
o
-4~~~~~-L~~~~~
o 2 4 6 8 10 12
Photon energy (eV)
Figure F9-1 £I(E) and £2(E) spectra for a-InAs at 300 K.
a-lnAs
4
3
..lo::
c:::
2
o 2 4 6 8 10 12
Photon energy (eV)
Figure F9·2 n(E) and k(E) spectra for a-InAs at 300 K.
F9 a-INDIUM ARSENIDE (a-InAs) 709
107
106 a-lnAs
105
~
,
--5
ij
104
~
103
102
101 10_2
10-1 10° 101 102
Photon energy (eV)
Figure F9·3 C1i...E) spectrum for a-InAs at 300 K.
Table F9·1 Optical constants of a-bIAs at 300 K.

eV £, £2 n k (X (em· l ) R
0.0099 0.136 1.37E+02
0.0124 0.208 2.6IE+02
0.0149 0.314 4.73E+02
0.0174 0.438 7.7IE+02
0.0198 0.712 1.43E+03
0.0223 1.128 2.55E+03
0.0248 1.406 3.53E+03
0.0273 0.855 2.36E+03
0.0285 0.495 1.43E+03
0.0297 0.227 6.84E+02
0.031 0.087 2.74E+02
0.0322 0.038 1.24E+02
0.0335 0.018 6.22E+01
0.4 15.55 0.621 3.944 0.079 3. 19E+03 0.355
0.8 16.14 2.327 4.028 0.289 2.34E+04 0.365
1.2 16.54 4.231 4.099 0.516 6.28E+04 0.376
1.6 16.24 6.629 4.110 0.806 1.3IE+05 0.386
2 15.06 9.944 4.068 1.222 2.48E+05 0.401
2.4 12.20 13.19 3.884 1.698 4. 13E+05 0.419
2.8 8.957 15.06 3.639 2.070 5.88E+05 0.436
3.2 5.217 15.44 3.280 2.354 7.64E+05 0.450
3.6 2.165 14.46 2.897 2.495 9.l1E+05 0.459
4 0.000 12.13 2.463 2.463 9.99E+05 0.454
4.4 -1.457 10.30 2.114 2.435 1.09E+06 0.459
Table F9·1 Continued (a·/nAs).

eV £1 £2 n k «(em·l ) R
4.8 -2.067 8.604 1.841 2.336 1.14E+06 0.456
5.2 -2.303 7.080 1.603 2.208 1.l6E+06 0.450
5.6 -2.283 5.924 1.426 2.078 1.18E+06 0.441
6 -2.205 4.937 1.265 1.951 1.l9E+06 0.434
7 -1.811 3.244 0.976 1.662 1.l8E+06 0.415
8 -1.260 2.257 0.814 1.386 1.12E+06 0.375
9 -0.748 1.664 0.734 1.134 1.03E+06 0.316
10 -0.394 1.326 0.703 0.943 9.56E+05 0.258
11 -0.059 1.086 0.717 0.757 8.44E+05 0.186
12 0.098 0.973 0.734 0.663 8.07E+05 0.148
14 0.221 3.13E+05
15 0.187 2.85E+05
16 0.148 2.40E+05
17 0.121 2.09E+05
18 0.132 2.40E+05
19 0.135 2.60E+05
20 0.118 2.40E+05
22 0.079 1.77E+05
24 0.041 1.00E+05
26 0.026 6.90E+04
28 0.Q18 5.IOE+04
30 0.016 4.90E+04
32 0.012 3.80E+04
33 0.009 3.10E+04
34 0.010 3.60E+04
36 0.020 7.20E+04
38 0.028 1.09E+05
40 0.034 1.38E+05
F10 a-INDIUM ANTIMONIDE
(a-lnSb)
FIO.I GENERAL REMARKS

Amorphous indium antimonide (a-InSb) does not have at the moment specific tech-
nological applications; consequently little research has been done as compared with its
crystalline counterpart.
FIO.2 OPTICAL CONSTANTS

The fundamental reflectivity spectrum of a-InSb has been measured by Stuke and
Zimmerer [1]. The a-InSb film used was obtained by evaporating the In-Sb compo-
nents separately. By performing the KK analysis, the (£1' ~ values were extracted in
the photon-energy range between 0 and 12 eV. They give a maximum value of ~-22.9
atE-1.9 eV.
Adachi and coworkers [2,3] used SE to measure the £(E) spectra of a-InSb films in
the 1.5-5.5-eV region. The a-InSb films were deposited by rf conventional [2] or by
planar magnetron sputtering [3]. The experimental ~(E) spectrum for rf-magnetron-
sputtered a-InSb gave a maximum value of 21.5 near 2 eV. This value is slightly larger
than that obtained from a conventional-diode-sputtered sample of ~-20 [2], but is
smaller than the value of~-22.9 at E-l.9 eV by Stuke and Zimmerer [1]. It should be
noted that the dielectric function exhibiting the largest ~ is most representative of a
bulk, dense (i.e., void- and/or roughness-free) sample.
Absorption spectra of some III-V amorphous semiconductors, including a-InSb,
have been measured in the region from 15 to 40 eV by Gudat et al. [3], The samples
were deposited by flash evaporation. The spectrum for a-InSb showed a weak structure
at-19 eV [d (In)].
Table F1O-llists the room-temperature values of £=£I+i~, n*=n+ik, a, and R for a-
InSb. They were obtained for OQ':$;12 eV from Stuke and Zimmerer [1] and for ~15
eV from Gudat et al. [4].
The (£I'~' (n, k), and a values in Table F1O-l are shown in Figs. FlO-l-FlO-3, re-
spectively.
711
REFERENCES
1. J. Stuke and G. Zimmerer, Phys. Status Solidi B 49,513 (1972).
2. S. Adachi, T. Miyazaki, and S. Hamadate,l. Appl. Phys. 71,395 (1992).
3. T. Ojima and S. Adachi, f. Appl. Phys. 82, 3105 (1997).
Solidi B 52, 505 (1972).
a-lnSb
IAJ 12
B
4
0
-4
-BO 2 4 6 B 10 12
Photon energy (eV)
Figure FIO-I £1(E) and £2(E) spectra for a-InSb at 300 K.
FlO a-INDIUM ANTIMONIDE (a-InSb) 713
a-lnSb
8 10 12
Photon energy (eV)
Figure FIO·2 neE) and k(E) spectra for a-InSb at 300 K.
a-lnSb
10° 101
Photon energy (eV)
Figure FlO·3 acE) spectrum for a-InSb at 300 K.
Table FIO·I Optical constants of a-/nSb at 300 K.

eV £1 ~ n k «(em-I) R
0 20.00 4.472 0.403
0.4 24.36 0.280 4.935 0.028 1.15E+03 0.440
0.7 29.01 5.047 5.406 0.467 3.31E+04 0.476
0.8 27.94 7.571 5.333 0.710 5.76E+04 0.475
1.2 24.26 17.25 5.197 1.659 2.02E+05 0.495
1.6 18.02 21.73 4.809 2.260 3.67E+05 0.505
1.9 12.67 22.92 4.408 2.600 5.01E+05 0.510
2 10.89 22.81 4.253 2.682 5.44E+05 0.511
2.4 4.059 20.89 3.560 2.934 7. 14E+05 0.516
2.8 -0.495 17.67 2.931 3.014 8.56E+05 0.522
3.2 -3.168 14.86 2.452 3.030 9.83E+05 0.535
3.6 -3.762 11.85 2.082 2.845 1.04E+06 0.527
4 -4.059 9.113 1.720 2.649 1.07E+06 0.523
4.4 -3.921 7.291 1.476 2.470 1.1OE+06 0.517
4.8 -3.624 5.818 1.271 2.289 l.l1E+06 0.511
5.2 ·3.307 4.739 1.112 2.131 1.12E+06 0.506
5.6 -2.871 3.898 0.992 1.964 l.11E+06 0.493
6 -2.495 3.225 0.889 1.813 1.10E+06 0.481
7 -1.703 2.159 0.723 1.492 l.06E+06 0.443
8 -1.149 1.542 0.622 1.239 1.01E+06 0.403
9 -0.634 1.192 0.598 0.996 9.09E+05 0.325
10 -0.297 0.939 0.587 0.801 8.12E+05 0.257
11 0.069 0.813 0.665 0.611 6.81E+05 0.154
12 0.198 0.771 0.705 0.547 6.65E+05 0.120
15 0.246 3.74E+05
16 0.203 3.29E+05
17 0.176 3.03E+05
18 0.177 3.24E+05
19 0.179 3.44E+05
20 0.166 3.36E+05
21 0.153 3.25E+05
22 0.124 2.76E+05
24 0.094 2.30E+05
26 0.082 2. 17E+05
28 0.076 2.17E+05
30 0.071 2.16E+05
32 0.071 2.30E+05
32.5 0.083 2.72E+05
33 0.084 2.80E+05
34 0.086 2.97E+05
35 0.082 2.90E+05
36 0,075 2.75E+05

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Optical Constants of Crystalline

Numerical Data and Graphical Information

Numerical Data and Graphical Information

Department of Electronic Engineering

Springer Science+ Business Media, LLC

Adachi, Sadao, 1950-

All rights reserved. No part of this publication may be reproduced, stored in a

Printed on acid-free paper.

YUki, Mai, and Koya

Contents of the Companion Book xvii

Abbreviations and Acronyms xix

B llI-V Binary Semiconductors 119

C Ill-V Alloy Semiconductors 279

C2 Ternary Alloys, 287

D ll-VI Semiconductors 411

D7 Cubic Cadmium Sulphide (c-CdS), 487

E IV-VI Semiconductors 613

F Amorphous Semiconductors 659

Knowledge of the refractive indices and absorption coefficients of semiconductors is

OPTICAL PROPERTIES OF CRYSTALLINE AND AMORPHOUS

Chapter 1 Materials, Properties, and Basic Formulas

DFI' - Density-Functional Theory

EMA - Effective-Mass Approximation

fcc - face-centered cubic

LEED - Low-Energy Electron Diffraction

This book contains optical-constant data of crystalline and amorphous semiconduc-

Optical data are, however, often presented in terms of wavelength A. in micrometers

k =21t = 21thv = E cm-1 (7)

Al.l GENERAL REMARKS

Al.2 ELECTRONIC ENEGY·BAND STRUCTURE

teristic of all published reflectance spectra in the UV region of diamond is the

AI.3 OPTICAL CONSTANTS

£.(T) = 5.70111 - 5.35167x10,sT + 1.6603x10"T 2 (ALl)

~(de.) =-O.72x10- l2 /Pa (A 1.2)

t~__~O~.1____~__~O~2~__- r__~OT·3~__- r__~O~A~__- r__~ev

where A=2.37837, B=1.18897xlO- 2 , C=-1.0083xI0- 4 , D=-2.3676xI0- s, and

Table Al·2 Optical constants of diamond at 300 K.

Table Al·2 Continued (diamond).

Table Al-2 Continued (diamond).

A2.1 GENERAL REMARKS

A2.2 ELECTRONIC ENERGY·BAND STRUCTURE

'I LaW" Abscrption Sand,

10°... ,•.... L2,3 edge

Photon energy (eV)

10° 10 1 102 10 3 104

Table A2-1 Optical constants of Si at 300 K.

Table A2·1 Continued (Si).

Table A2·1 Continued (Si).

Table A2·1 Continued (Si).

Table A2·I Continued (Si).

A3.1 GENERAL REMARKS

A3.2 ELECTRONIC ENERGY·BAND STRUCTURE

Figure A3·1 Electronic en-

A3.3 OPTICAL CONSTANTS

preted in terms of indirect transitions involving phonons in the whole temperature

fully explained by the MDF.

16. S. J. Fray, F. A. Johnson, J. E. Quarrington, and N. Williams, Proc. Phys. Soc.

100 101 102

Table A3-2 Continued (Ge).

Table AJ·2 Continued (Ge).

Table A3-2 Continued (Ge).

A4.1 GENERAL REMARKS

A4.2 ELECTRONIC ENERGY·BAND STRUCTURE

10 •••• • •••••• : ••••• 1::: 1111 •••• ", •••••••••••••••••••••• "

t~~O~.1~~O~2~- r~OT·3~- r~O~A~- r~ev