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2 3 4
1
INV -
MULTIPLIER AND 40K
THD OPTIMIZER
+
2.5V
5pF
VOLTAGE OVERVOLTAGE - +
REGULATOR DETECTION VCC
8
VCC INTERNAL
SUPPLY 7V R Q 15 V
25 V
S
R1 7
GD
+ UVLO DRIVER
R2 - Starter
VREF2
stop
ZERO CURRENT
DETECTOR
+
2.1 V STARTER
1.6 V -
DISABLE
6 5
GND ZCD
Rev. 8
November 2005 1/16
L6562
2 Description (continued)
The highly linear multiplier includes a special circuit, able to reduce AC input current distortion, that allows
wide-range-mains operation with an extremely low THD, even over a large load range.
The output voltage is controlled by means of a voltage-mode error amplifier and a precise (1% @Tj =
25°C) internal voltage reference.
The device features extremely low consumption (≤70 µA before start-up and <4 mA running) and includes
a disable function suitable for IC remote ON/OFF, which makes it easier to comply with energy saving
norms (Blue Angel, EnergyStar, Energy2000, etc.).
An effective two-step OVP enables to safely handle overvoltages either occurring at start-up or resulting
from load disconnection.
The totem-pole output stage, capable of 600 mA source and 800 mA sink current, is suitable for big MOS-
FET or IGBT drive which, combined with the other features, makes the device an excellent low-cost solu-
tion for EN61000-3-2 compliant SMPS's up to 300W.
INV 1 8 Vcc
COMP 2 7 GD
MULT 3 6 GND
CS 4 5 ZCD
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L6562
3/16
L6562
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L6562
ICC Icc 10
(mA) [mA] Operating
5
10 Quiescent
2
5
1 1 Disabled or
during OVP
0.5 0.5 Vcc = 12 V
Co = 1 nF
0.1
0.2 f = 70 kHz
0.05
Co = 1nF 0.1
0.01 f = 70 kHz
0.05 Before start-up
Tj = 25°C
0.005
0 0.02
0 5 10 15 20 25 -50 0 50 100 150
Vcc(V) Tj (°C)
Figure 5. Start-up & UVLO vs. Tj Figure 7. Vcc Zener voltage vs. Tj
VccZ 28
12.5
(V)
VCC-ON
(V) 12 27
11.5
26
11
25
10.5
24
10
VCC-OFF 9.5 23
(V)
9 22
-50 0 50 100 150 -50 0 50 100 150
Tj (°C) Tj (°C)
5/16
L6562
300
2.5
200
2.45
100
2.4 0
-50 0 50 100 150 -50 0 50 100 150
Tj (°C) Tj (°C)
Figure 10. E/A output clamp levels vs. Tj Figure 13. Multiplier gain vs. Tj
Vpin2 K 1
(V) 6
Vcc = 12 V
Upper clamp 0.8 VCOMP =4 V
Vcc = 12 V VMULT =1V
5
0.6
4
0.4
3
0.2
Lower clamp
2 0
-50 0 50 100 150 -50 0 50 100 150
Tj (°C) Tj (°C)
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L6562
Figure 14. Vcs clamp vs. Tj Figure 17. ZCD source capability vs. Tj
VCSx IZCDsrc
2 0
(V) (mA)
Vcc = 12 V
VZCD = lower clamp
1.8
-2
1.6
-4
1.4
Vcc = 12 V
-6
VCOMP= Upper clamp
1.2
1 -8
-50 0 50 100 150 -50 0 50 100 150
Tj (°C) Tj (°C)
Figure 15. Start-up timer vs. Tj Figure 18. Gate-drive output low saturation
Tstart 150 Vpin7 [V]
(µs)
Vcc = 12 V 4
Tj = 25 °C
140 Vcc = 11 V
SINK
3
130
2
120
1
110
100 0
-50 0 50 100 150 0 200 400 600 800 1,000
Tj (°C)
IGD[mA]
Figure 16. ZCD clamp levels vs. Tj Figure 19. Gate-drive output high saturation
V ZCD Vpin7[V]
7
(V) -1.5
Upper clamp Tj = 25 °C
6
-2 Vcc = 11 V
Vcc - 2.0
SOURCE
5 Vcc = 12 V
I ZCD = ±2.5 mA
Vcc - -2.5
2.5
4
-3
Vcc - 3.0
3
Vcc - -3.5
3.5
2
-4
Vcc - 4.0
1 Lower clamp
-4.5
0 0 100 200 300 400 500 600 700
-50 0 50 100 150
IGD[mA]
Tj (°C)
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L6562
Figure 20. Gate-drive clamp vs. Tj Figure 21. UVLO saturation vs. Tj
Vpin7 clamp Vpin7
(V) 15 (V) 1.1
Vcc = 20 V Vcc = 0 V
1
14
0.9
13
0.8
12
0.7
11 0.6
10 0.5
-50 0 50 100 150 -50 0 50 100 150
Tj (°C) Tj (°C)
4 Application Information
I R2 = 2.5 Vo – 2.5- .
-------- = IR1 = ---------------------
R2 R1
If the output voltage experiences an abrupt change ∆Vo > 0 due to a load drop, the voltage at pin INV will
be kept at 2.5V by the local feedback of the error amplifier, a network connected between pins INV and
COMP that introduces a long time constant to achieve high PF (this is why ∆Vo can be large). As a result,
the current through R2 will remain equal to 2.5/R2 but that through R1 will become:
Vo – 2.5 + ∆Vo
I'R1 = ---------------------------------------- .
R1
The difference current ∆IR1=I'R1-IR2=I'R1-IR1=∆Vo/R1 will flow through the compensation network and en-
ter the error amplifier output (pin COMP). This current is monitored inside the L6562 and if it reaches about
37 µA the output voltage of the multiplier is forced to decrease, thus smoothly reducing the energy deliv-
ered to the output. As the current exceeds 40 µA, the OVP is triggered (Dynamic OVP): the gate-drive is
forced low to switch off the external power transistor and the IC put in an idle state. This condition is main-
tained until the current falls below approximately 10 µA, which re-enables the internal starter and allows
switching to restart. The output ∆Vo that is able to trigger the Dynamic OVP function is then:
–6
∆Vo = R1 ⋅ 40 ⋅ 10 .
An important advantage of this technique is that the OV level can be set independently of the regulated
output voltage: the latter depends on the ratio of R1 to R2, the former on the individual value of R1. Another
advantage is the precision: the tolerance of the detection current is 12%, that is 12% tolerance on ∆Vo.
Since ∆Vo << Vo, the tolerance on the absolute value will be proportionally reduced.
Example: Vo = 400 V, ∆Vo = 40 V. Then: R1=40V/40µA=1MΩ; R2=1MΩ·2.5/(400-2.5)=6.289kΩ. The tol-
erance on the OVP level due to the L6562 will be 40·0.12=4.8V, that is 1.2% of the regulated value.
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L6562
When the load of a PFC pre-regulator is very low, the output voltage tends to stay steadily above the nom-
inal value, which cannot be handled by the Dynamic OVP. If this occurs, however, the error amplifier out-
put will saturate low; hence, when this is detected, the external power transistor is switched off and the IC
put in an idle state (Static OVP). Normal operation is resumed as the error amplifier goes back into its lin-
ear region. As a result, the L6562 will work in burst-mode, with a repetition rate that can be very low.
When either OVP is activated the quiescent consumption of the IC is reduced to minimize the discharge
of the Vcc capacitor and increase the hold-up capability of the IC supply system.
Figure 22. THD optimization: standard TM PFC controller (left side) and L6562 (right side)
Imains
Input current Imains
Input current
Vdrain
MOSFET's drain voltage Vdrain
MOSFET's drain voltage
To overcome this issue the circuit embedded in the L6562 forces the PFC pre-regulator to process more
energy near the line voltage zero-crossings as compared to that commanded by the control loop. This will
result in both minimizing the time interval where energy transfer is lacking and fully discharging the high-
frequency filter capacitor after the bridge. The effect of the circuit is shown in figure 23, where the key
waveforms of a standard TM PFC controller are compared to those of the L6562.
Essentially, the circuit artificially increases the ON-time of the power switch with a positive offset added to
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L6562
the output of the multiplier in the proximity of the line voltage zero-crossings. This offset is reduced as the
instantaneous line voltage increases, so that it becomes negligible as the line voltage moves toward the
top of the sinusoid.
To maximally benefit from the THD optimizer circuit, the high-frequency filter capacitor after the bridge rec-
tifier should be minimized, compatibly with EMI filtering needs. A large capacitance, in fact, introduces a
conduction dead-angle of the AC input current in itself - even with an ideal energy transfer by the PFC pre-
regulator - thus making the action of the optimizer circuit little effective.
D3 1N5406
T
R4 R5 D8 D1 NTC Vo=400V
180 kΩ 180 kΩ C5 12 nF R11
1N4150 R14 STTH5L06 2.5 Ω Po=250W
750 kΩ
100 Ω
D2 R50 10 kΩ
R1 R12
1.5 MΩ 1N5248B
R6 750 kΩ
C3 2.2 µF
68 kΩ
BRIDGE
C1 C23
STBR606 1 µF
FUSE + 680 nF
400V
5A/250V R2
8 5 2 1 R7
1.5 MΩ
10 Ω C6
MOS
- 3 L6562 7 STP12NM50
100 µF
Vac 450V
7 °C/W heat sink
(85V to 265V) 6 4
C2
10nF C29
R3 C4
22 µF R9 R10 R13
22 kΩ 100 nF
25V 0.33Ω 0.33Ω 9.53 kΩ
1W 1W -
T
R4 R5 D8 D1 NTC Vo=400V
180 kΩ 180 kΩ C5 12 nF R11
1N4150 R14 STTH1L06 2.5 Ω Po=80W
750 kΩ
100 Ω
D2 R50 12 kΩ
R1 R12
750 kΩ 1N5248B
R6 750 kΩ
C3 680 nF
68 kΩ
BRIDGE
C1 C23
DF06M 0.47 µF 330 nF
FUSE +
400V
4A/250V R2
8 5 2 1 R7
750 kΩ
33 Ω MOS C6
- 3 L6562 7 STP8NM50 47 µF
Vac 450V
(85V to 265V) 6 4
C2
10nF C29
R3 C4
22 µF R9 R10 R13
10 kΩ 100 nF
25V 0.82Ω 0.82Ω 9.53 kΩ
0.6 W 0.6 W -
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L6562
Figure 25. EVAL6562-80W: PCB and component layout (Top view, real size: 57 x 108 mm)
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L6562
Figure 26. Line filter (not tested for EMI compliance) used for EVAL6562N evaluation
B81133 B81133
to the AC to
470 nF, X2 680 nF, X2
source EVAL6562N
EPCOS EPCOS
B82732
47 mH, 1.3A
EPCOS
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L6562
5 Package Information
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect. The category of second Level Interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark.
ECOPACK specifications are available at: www.st.com.
mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX.
MECHANICAL DATA
A 3.32 0.131
a1 0.51 0.020
D 10.92 0.430
e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0.260
I 5.08 0.200
13/16
L6562
mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX.
MECHANICAL DATA
A 1.35 1.75 0.053 0.069
e 1.27 0.050
k 0˚ (min.), 8˚ (max.)
0016023 C
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L6562
6 Revision History
June 2004 6 Modified the Style-look in compliance with the “Corporate Technical
Publications Design Guide”.
Changed input of the power amplifier connected to Multiplier (Fig. 2).
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L6562
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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