Silicon N-Channel Power MOSFET

○
R

CS740 A8H
General Description： VDSS 400 V
CS740 A8H, the silicon N-channel Enhanced ID 10 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (T C=25℃) 120 W

which reduce the conduction loss, improve switching RDS(ON)Typ 0.36 Ω

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.50Ω)
l Low Gate Charge (Typical Data:28nC)

l Low Reverse transfer capacitances(Typical:21pF)

l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 400 V
Continuous Drain Current 10 A
ID
Continuous Drain Current T C = 100 °C 7 A
a1
IDM Pulsed Drain Current 40 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 650 mJ
a1
EAR Avalanche Energy ,Repetitive 66 mJ
a1
IAR Avalanche Current 3.6 A
a3
dv/dt Peak Diode Recovery dv/dt 5 V/ns
Power Dissipation 120 W
PD
Derating Factor above 25°C 0.96 W/℃
TJ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 400 -- -- V
ΔVDSS/ΔT J vdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.55 -- V/℃
VDS = 400V, V GS= 0V,
Ta = 25℃ -- -- 1
IDSS Drain to Source Leakage Current VDS =320V, V GS= 0V, µA
Ta = 125℃ -- -- 100

IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =5A -- 0.36 0.50 Ω
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.0 4.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Trans conductance VDS=15V, ID =5A -- 10 -- S
C iss Input Capacitance -- 1254 --
VGS = 0V V DS = 25V
C oss Output Capacitance f = 1.0MHz -- 150 -- pF
C rss Reverse Transfer Capacitance -- 21 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 13 --
tr Rise Time ID =10A VDD =200V -- 24 --
VGS = 10V RG =12Ω ns
td(OFF) Turn-Off Delay Time -- 44 --
tf Fall Time -- 28 --
Qg Total Gate Charge -- 28
ID =10A V DD =200V
Qgs Gate to Source Charge VGS = 10V -- 7 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 11 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 10 A
ISM Maximum Pulsed Current (Body Diode) -- -- 40 A
VSD Diode Forward Voltage IS =10,VGS =0V -- -- 1.5 V
trr Reverse Recovery Time IS =10,Tj = 25°C -- 303 ns
dIF /dt=100A/us,
Qrr Reverse Recovery Charge V GS=0V -- 1867 nC
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

R θJC Junction-to-Case 1.04 ℃/W
R θJA Junction-to-Ambient 62.5 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10.0mH, ID=11.4A, Start T J =25℃
a3
：ISD =10A,di/dt ≤100A/us,VDD≤BV DS, Start T J=25℃

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Characteristics Curve：
100 135

120
Id,Drain Current,Amps

10 100μs 105

Pd , Power Dissipation ,Watts

90
1ms
1 75
10ms
DC 60
OPERATION IN THIS AREA
45
MAY BE LIMITED BY RDS(ON)
0.1 TJ=MAX RATED
30
TC=25℃ Single Pulse
15
0.01
0
1 10 100 1000 0 25 50 75 100 125 150
Vds,Drain Source Voltage,Volts Tc , Case Tem perature , C
Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature
12 16

VGS=10V
10
Id,Drain Source,Volts

12
Id , Drain Current ,Amps

8
VGS=8V
6 8

4 VGS=7V

4
2 VGS=6V

0 0
0 25 50 75 100 125 150 0 10 20 30 40 50
Tc , Case Temperature ,C Vds,Drain Source Voltage,Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics
1
Thermal impeddance,Normalized

50%

20%

10%
0.1 PDM
5% t1
t2
2%
NOTES：
1% DUTY FACTOR ：D=t1/ t2
Single pulse PEAK Tj=PDM*ZthJC*RthJC+TC

0.01
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration,seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case

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100
TRANSCONDUCTANCE MAY LIMIT
Idm , Peak Current , Amps

CURRENT IN THIS REGION FOR TEMPERATURES

ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
 150 − TC 
I = I 25  
 125 
10

VGS=10V
1
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01
t Pulse W idth , Seconds

Figure 6 Maximun Peak Current Capability

16 1.8
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Id,Drain to source Current,Amps

1.5 Tc =25 ℃
Rds(on), Drain to Source ON

ID= 11A
12
1.2 ID= 5.5A
Resistance ,Ohms

VDS=25V
ID= 2.75A
8 0.9

0.6
4
0.3

0 0
0 2 4 6 8 10 4 6 8 10 12
Vgs,Gate to source Voltage,Volts Vgs , Gate to Source Voltage，Volts
Figure 7 Typical Transfer Characteristics Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
1.2 2.5
Rds(on), Drain to Source ON

1 2 VGS=10V
Resistance,Normalized

ID=5.5A
VGS=10V

0.8 1.5

0.6 1

0.4 0.5

0.2 0
0 2 4 6 8 10 -100 -50 0 50 100 150 200
Id , Drain Current(A) Tj,Junction Temperature.C
Figure 9 Typical Drain to Source ON Resistance Figure 10 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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1.4

Bvdss,Drain to Source Breakdown Voltage,

1.13
VDS=VGS
1.2 ID=250μA
Vgs(th),Threshold Voltage

1.08
VGS=0
ID=250μA

Normalized
1 1.03

0.8 0.98

0.6 0.93

0.4 0.88
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Tj,Junction Temperature Tj, Junction temperature，C
Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature

1400 20
VGS=0V , f=1MHz
1200 Ciss=Cgs+Cgd Vgs , Gate to Source Voltage ,Volts
Coss=Cds+Cgd 16
Ciss Crss=Cgd
1000 VDS=400V
Capacitance , pF

12 ID.=11.0A
800

600 8

400
4
200
Coss
Crss 0
0
0 10 20 30
0 10 20 30 40 50 60 Qg , Total Gate Charge , nC
Vds , Drain - Source Voltage , Volts

Figure 13 Typical Capacitance vs Drain to Source Voltage Figure 14 Typical Gate Charge vs Gate to Source Voltage
12.5 100
Isd,Reverse Drain Current,Amps

10
Id , Drain Current , Amps

STARTING Tj = 25℃
10 STARTING Tj = 150℃
7.5

5 +150℃
1
+25℃
2.5 -55℃
If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0 0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
Vs,Source-Drain Voltage,Volts tav,Time in Avalanche,Seconds
Figure 15 Typical Body Diode Transfer Characteristics Figure 16 Unclamped Inductive Switching Capability

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Test Circuit and Waveform

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Package Information：

Values(mm)
Items
MIN MAX
A 10.00 10.60
B 15.0 16.0
B1 8.90 9.50
C 4.30 4.80
C1 2.30 3.10
D 1.20 1.40
E 0.70 0.90
F 0.30 0.60
G 1.17 1.37
H 3.30 3.80
L 12.7 14.7
N 2.34 2.74
Q 2.40 3.00
3.50 3.90
TO-220AB Package
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The name and content of poisonous and harmful material in products

Part’s Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1%

Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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