PIN DIODE

◆Small Insertion Loss ■Applications

◆High Isolation ●High Power Antenna Switch
◆High Power Handling (25W output two-way radio)

■General Description ■Dimensions

MAX 5.0
The XB15A402 PIN diode employs a high reliability glass package that is
Unit : mm
designed for solid state antenna switches used in commercial two-way MAX 4.2

MAX 2.8
radios.

TYP 0.8
MIN 28 MIN 28

JEDEC DO-41

■Absolute Maximum Ratings

Ta=25 OC
SYMBOL PARAMETER RATINGS UNITS
V RM Repetitive Peak Reverse Voltage 270 V
I FSM * Forward Surge Current 2 A
P Power Dissipation 1 W
O
Tj Junction Temperature 175 C
O
Tstg Storage Temperature -55 ~ 175 C
* t = 5sec

■Electrical Characteristics
Ta=25 OC
LIMITS
SYMBOL PARAMETER TEST CONDITIONS UNITS
MIN TYP MAX
I R1 V R = 270V 10 µA
Reverse Current
I R2 V R = 200V 150 nA

Ct
IF Forward Current
Diode Capacitance
V F = 1.0V
V R = 12V, f = 1MHz
500
2.0 3.0
mA
pF 15
r fs Forward Series Resistance I F = 50mA, f = 470MHz 0.5 0.7 Ω
fc Cut-off Frequency V R = 12V, f = 50MHz 1.0 GHz

1059
 XB15A402

FORWARD CURRENT REVERSE CURRENT

vs. FORWARD VOLTAGE vs. REVERSE VOLTAGE
1.E+00 1.E-07
75℃
100℃
50℃

25℃
1.E-01 1.E-08
ＩF(A)

100℃

ＩR(A)
75℃
50℃
1.E-02 1.E-09
25℃

0℃

1.E-03 1.E-10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.E+00 1.E+01 1.E+02 1.E+03
ＶF(V) ＶR(V)

FORWARD SERIES RESISTANCE DIODE CAPACITANCE

vs. FORWARD CURRENT vs. REVERSE VOLTAGE
f =470MHz, Ta =25℃ f =1MHz, Ta =25℃
1.E+01 1.E+01
ｒｆｓ(Ω)

Ｃｔ(pF)

1.E+00 1.E+00

1.E-01 1.E-01
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
ＶR(V)
ＩF(A)

Q vs. REVERSE VOLTAGE

f =50MHz, Ta =25℃
1.E+03

1.E+02
Ｑ

1.E+01

1.E+00
1.E+00 1.E+01 1.E+02

15 ＶR(V)

1060
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