PN3565

Discrete POWER & Signal

Technologies

PN3565

C TO-92
BE

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 25 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 500 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

PN3565
PD Total Device Dissipation 625 mW
Derate above 25°C 5.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W

 1997 Fairchild Semiconductor Corporation

 PN3565
NPN General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 2.0 mA, I B = 0 25 V
V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 30 V
V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 6.0 V
ICBO Collector Cutoff Current VCB = 25 V, IE = 0 50 nA

ON CHARACTERISTICS*
hFE DC Current Gain VCE = 10 V, IC = 1.0 mA 150 600
VCE( sat) Collector-Emitter Saturation Voltage IC = 1.0 mA, I B = 0.1 mA 0.35 V

SMALL SIGNAL CHARACTERISTICS

Cob Output Capacitance VCB = 5.0 V 4.0 pF
hie Input Impedance I C = 1.0 mA, VCE = 5.0 V, 2.0 20 kΩ
f = 1.0 kHz
hoe Output Admittance I C = 1.0 mA, VCE = 5.0 V, 0.5 35 µmhos
f = 1.0 kHz
hfe Small-Signal Current Gain I C = 1.0 mA, VCE = 5.0 V,
f = 20 MHz 2.0 12
I C = 1.0 mA, VCE = 5.0 V,
f = 1.0 kHz 120 750

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%