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Note: The variation in EG with temperature is very small compared to the variation in ni and

hence EG can be considered independent of temperature in this method. Assume NC and NV to be independent of

temperature8. Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where

𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with

temperature is very small compared to the variation in ni and hence EG can be considered independent of

temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral

in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And

𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to

the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV

to be independent of temperature8. Express the following integral in terms of Fermi-Dirac

integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.

Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be

considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.

Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where

𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with

temperature is very small compared to the variation in ni and hence EG can be considered independent of

temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral

in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And

𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to

the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV

to be independent of temperature8. Express the following integral in terms of Fermi-Dirac

integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.

Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be

considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.

Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where

𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with

temperature is very small compared to the variation in ni and hence EG can be considered independent of

temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral

in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And

𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to

the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV

to be independent of temperature8. Express the following integral in terms of Fermi-Dirac

integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.

Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be

considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.

Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where

𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with

temperature is very small compared to the variation in ni and hence EG can be considered independent of

temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral

in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And

𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to

the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV

to be independent of temperature8. Express the following integral in terms of Fermi-Dirac

integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.

Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be

considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.

Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where

𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with

temperature is very small compared to the variation in ni and hence EG can be considered independent of

temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral

in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And

𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to

the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV

to be independent of temperature8. Express the following integral in terms of Fermi-Dirac

integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.

Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be

considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.

Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where

𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with

temperature is very small compared to the variation in ni and hence EG can be considered independent of

temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral

in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And

𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to

the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV

to be independent of temperature8. Express the following integral in terms of Fermi-Dirac

integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.

Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be

considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.

Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where

𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with

temperature is very small compared to the variation in ni and hence EG can be considered independent of

temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral

in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And

𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏDetermine the equilibrium electron and hole concentrations inside a uniformly doped

sample of Si under the following condition:(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.(b) T = 300 K, Na = 1016 /cm3,

Nd << Na.(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni

= 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can

be the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of

available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary

constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =

1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and

𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression

for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is

any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3

and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇

and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds. Here EG = 1.08 eV

at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a

semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that

above condition holds.3. Develop an expression for the total number of available states/cm3 in the conduction

band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the

following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2.

Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum

Nd and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3

in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem

2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni =

1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be

the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of

available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary

constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =

1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and

𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression

for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is

any arbitrary constant.4. Solve Problem 2.75. Solve the following:3. Develop an expression for the total number of

available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary

constant.4. Solve Problem 2.75. Solve the following:x 1015 /cm3, Nd = 1016 /cm3.(d) T = 450 K, Na = 0, Nd = 1014

/cm3.(e) T = 650 K, Na = 0, Nd = 1014 /cm3Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at

650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇

then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression for the total

number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any

arbitrary constant.4. Solve Problem 2.75. Solve the following:a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical

value) the probability of finding electrons in states at 𝐸𝐶+𝐾𝑇.b) The probability that a state is filled at the

conduction band edge (𝐸𝐶) is precisely equal to the probability that a sDetermine the equilibrium electron and

hole concentrations inside a uniformly doped sample of Si under the following condition:(a) T = 300 K, Na << Nd,

Nd = 1015 /cm3.(b) T = 300 K, Na = 1016 /cm3, Nd << Na.(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5

x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as

𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3.

Develop an expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶

and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450

K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is

defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition

holds.3. Develop an expression for the total number of available states/cm3 in the conduction band between

energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG =

1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a

semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that

above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni =

1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be

the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of

available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary

constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =

1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and

𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression

for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is

any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3

and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇

and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an

expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶

+𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and

ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is

defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition

holds.3. Develop an expression for the total number of available states/cm3 in the conduction band between

energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:3. Develop

an expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶

+𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:x 1015 /cm3, Nd = 1016

/cm3.(d) T = 450 K, Na = 0, Nd = 1014 /cm3.(e) T = 650 K, Na = 0, Nd = 1014 /cm3Here EG = 1.08 eV at 450 K and ni

= 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined

as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3.

Develop an expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶

and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:a) If 𝐸𝐹 is positioned at

𝐸𝐶, determine (numerical value) the probability of finding electrons in states at 𝐸𝐶+𝐾𝑇.b) The probability that a

state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability that a sDetermine the

equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the following

condition:(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.(b) T = 300 K, Na = 1016 /cm3, Nd << Na.(c) T = 300 K, Na = 9

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-

degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd

and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3 in

the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75.

Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016

/cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the

maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of available

states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve

Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K

and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then

what can be the maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x

1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as

𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3.

Develop an expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶

and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450

K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is

defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition

holds.3. Develop an expression for the total number of available states/cm3 in the conduction band between

energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG =

1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a

semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that

above condition holds.3. Develop an expression for the total number of available states/cm3 in the conduction

band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the

following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2.

Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum

Nd and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3

in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem

2.75. Solve the following:3. Develop an expression for the total number of available states/cm3 in the conduction

band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the

following:x 1015 /cm3, Nd = 1016 /cm3.(d) T = 450 K, Na = 0, Nd = 1014 /cm3.(e) T = 650 K, Na = 0, Nd = 1014

/cm3Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-

degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd

and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3 in

the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75.

Solve the following:a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in

states at 𝐸𝐶+𝐾𝑇.b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the

probability that a sDetermine the equilibrium electron and hole concentrations inside a uniformly doped sample of

Si under the following condition:(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.(b) T = 300 K, Na = 1016 /cm3, Nd <<

Na.(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni =

1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be

the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of

available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary

constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =

1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and

𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression

for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is

any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3

and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇

and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds. Here EG = 1.08 eV

at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a

semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that

above condition holds.3. Develop an expression for the total number of available states/cm3 in the conduction

band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the

following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2.

Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum

Nd and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3

in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem

2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni =

1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be

the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of

available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary

constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =

1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and

𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression

for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is

any arbitrary constant.4. Solve Problem 2.75. Solve the following:3. Develop an expression for the total number of

available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary

constant.4. Solve Problem 2.75. Solve the following:x 1015 /cm3, Nd = 1016 /cm3.(d) T = 450 K, Na = 0, Nd = 1014

/cm3.(e) T = 650 K, Na = 0, Nd = 1014 /cm3Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at

650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇

then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression for the total

number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any

arbitrary constant.4. Solve Problem 2.75. Solve the following:a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical

value) the probability of finding electrons in states at 𝐸𝐶+𝐾𝑇.b) The probability that a state is filled at the

conduction band edge (𝐸𝐶) is precisely equal to the probability that a s

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