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# from this equation.

Note: The variation in EG with temperature is very small compared to the variation in ni and
hence EG can be considered independent of temperature in this method. Assume NC and NV to be independent of
temperature8. Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where
𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with
temperature is very small compared to the variation in ni and hence EG can be considered independent of
temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral
in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And
𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to
the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV
to be independent of temperature8. Express the following integral in terms of Fermi-Dirac
integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.
Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be
considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.
Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where
𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with
temperature is very small compared to the variation in ni and hence EG can be considered independent of
temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral
in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And
𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to
the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV
to be independent of temperature8. Express the following integral in terms of Fermi-Dirac
integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.
Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be
considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.
Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where
𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with
temperature is very small compared to the variation in ni and hence EG can be considered independent of
temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral
in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And
𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to
the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV
to be independent of temperature8. Express the following integral in terms of Fermi-Dirac
integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.
Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be
considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.
Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where
𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with
temperature is very small compared to the variation in ni and hence EG can be considered independent of
temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral
in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And
𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to
the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV
to be independent of temperature8. Express the following integral in terms of Fermi-Dirac
integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.
Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be
considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.
Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where
𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with
temperature is very small compared to the variation in ni and hence EG can be considered independent of
temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral
in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And
𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to
the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV
to be independent of temperature8. Express the following integral in terms of Fermi-Dirac
integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.
Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be
considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.
Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where
𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with
temperature is very small compared to the variation in ni and hence EG can be considered independent of
temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral
in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And
𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with temperature is very small compared to
the variation in ni and hence EG can be considered independent of temperature in this method. Assume NC and NV
to be independent of temperature8. Express the following integral in terms of Fermi-Dirac
integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation.
Note: The variation in EG with temperature is very small compared to the variation in ni and hence EG can be
considered independent of temperature in this method. Assume NC and NV to be independent of temperature8.
Express the following integral in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where
𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And 𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏfrom this equation. Note: The variation in EG with
temperature is very small compared to the variation in ni and hence EG can be considered independent of
temperature in this method. Assume NC and NV to be independent of temperature8. Express the following integral
in terms of Fermi-Dirac integrals.𝐼1=∫𝑀(𝐸)𝑓0(𝐸)𝑑𝐸∞−∞Where 𝑓0(𝐸)=11+exp(𝐸−𝐸𝐹)𝐾𝑇And
𝑀(𝐸)=𝑊(√2𝑚∗(𝐸−𝐸𝐶))𝜋ℏDetermine the equilibrium electron and hole concentrations inside a uniformly doped
sample of Si under the following condition:(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.(b) T = 300 K, Na = 1016 /cm3,
Nd << Na.(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni
= 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can
be the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of
available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary
constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and
𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression
for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is
any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3
and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇
and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds. Here EG = 1.08 eV
at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a
semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that
above condition holds.3. Develop an expression for the total number of available states/cm3 in the conduction
band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the
following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2.
Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum
Nd and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3
in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem
2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni =
1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be
the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of
available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary
constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and
𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression
for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is
any arbitrary constant.4. Solve Problem 2.75. Solve the following:3. Develop an expression for the total number of
available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary
constant.4. Solve Problem 2.75. Solve the following:x 1015 /cm3, Nd = 1016 /cm3.(d) T = 450 K, Na = 0, Nd = 1014
/cm3.(e) T = 650 K, Na = 0, Nd = 1014 /cm3Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at
650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇
then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression for the total
number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any
arbitrary constant.4. Solve Problem 2.75. Solve the following:a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical
value) the probability of finding electrons in states at 𝐸𝐶+𝐾𝑇.b) The probability that a state is filled at the
conduction band edge (𝐸𝐶) is precisely equal to the probability that a sDetermine the equilibrium electron and
hole concentrations inside a uniformly doped sample of Si under the following condition:(a) T = 300 K, Na << Nd,
Nd = 1015 /cm3.(b) T = 300 K, Na = 1016 /cm3, Nd << Na.(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5
x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as
𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3.
Develop an expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶
and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450
K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is
defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition
holds.3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG =
1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a
semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that
above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni =
1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be
the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of
available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary
constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and
𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression
for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is
any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3
and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇
and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an
expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶
+𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and
ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is
defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition
holds.3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:3. Develop
an expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶
+𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:x 1015 /cm3, Nd = 1016
/cm3.(d) T = 450 K, Na = 0, Nd = 1014 /cm3.(e) T = 650 K, Na = 0, Nd = 1014 /cm3Here EG = 1.08 eV at 450 K and ni
= 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined
as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3.
Develop an expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶
and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:a) If 𝐸𝐹 is positioned at
𝐸𝐶, determine (numerical value) the probability of finding electrons in states at 𝐸𝐶+𝐾𝑇.b) The probability that a
state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability that a sDetermine the
equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the following
condition:(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.(b) T = 300 K, Na = 1016 /cm3, Nd << Na.(c) T = 300 K, Na = 9
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-
degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd
and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3 in
the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75.
Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016
/cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of available
states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve
Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K
and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then
what can be the maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x
1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as
𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3.
Develop an expression for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶
and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450
K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is
defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition
holds.3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG =
1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a
semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that
above condition holds.3. Develop an expression for the total number of available states/cm3 in the conduction
band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the
following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2.
Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum
Nd and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3
in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem
2.75. Solve the following:3. Develop an expression for the total number of available states/cm3 in the conduction
band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the
following:x 1015 /cm3, Nd = 1016 /cm3.(d) T = 450 K, Na = 0, Nd = 1014 /cm3.(e) T = 650 K, Na = 0, Nd = 1014
/cm3Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-
degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd
and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3 in
the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75.
Solve the following:a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in
states at 𝐸𝐶+𝐾𝑇.b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the
probability that a sDetermine the equilibrium electron and hole concentrations inside a uniformly doped sample of
Si under the following condition:(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.(b) T = 300 K, Na = 1016 /cm3, Nd <<
Na.(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni =
1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be
the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of
available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary
constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and
𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression
for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is
any arbitrary constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3
and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇
and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds. Here EG = 1.08 eV
at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a
semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that
above condition holds.3. Develop an expression for the total number of available states/cm3 in the conduction
band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem 2.75. Solve the
following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.2.
Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum
Nd and Na such that above condition holds.3. Develop an expression for the total number of available states/cm3
in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.4. Solve Problem
2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni =
1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be
the maximum Nd and Na such that above condition holds.3. Develop an expression for the total number of
available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary
constant.4. Solve Problem 2.75. Solve the following:Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and
𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression
for the total number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is
any arbitrary constant.4. Solve Problem 2.75. Solve the following:3. Develop an expression for the total number of
available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary
constant.4. Solve Problem 2.75. Solve the following:x 1015 /cm3, Nd = 1016 /cm3.(d) T = 450 K, Na = 0, Nd = 1014
/cm3.(e) T = 650 K, Na = 0, Nd = 1014 /cm3Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at
650 K and ni = 1x1016 /cm3.2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇
then what can be the maximum Nd and Na such that above condition holds.3. Develop an expression for the total
number of available states/cm3 in the conduction band between energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any
arbitrary constant.4. Solve Problem 2.75. Solve the following:a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical
value) the probability of finding electrons in states at 𝐸𝐶+𝐾𝑇.b) The probability that a state is filled at the
conduction band edge (𝐸𝐶) is precisely equal to the probability that a s