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495
Microfabrication Laboratory
and
520.773
Advanced Topics in
Fabrication and Microengineering
Lecture 9
Dry Etching
Reading for this lecture:
(1) May, Chapter 5.2
(2) Williams paper
CF4 CF4
F- H2O H+ F
H+ SF6 CF3 +
H2O HF -HF HF H O CF22+ CF5-
F 2
XeF2 Adsorb Xe + 2 F
High
Gas/vapor Etching Chemical Isotropic Very high none
(760-1torr)
Medium
Plasma Etching Chemical Isotropic High 10's to 100's of Watts
(>100 mtorr)
Low
Sputtering Etching Physical Directional Low 100's to 1000's of Watts
(~10 mtorr)
( 1 torr = 1 mmHg)
Degree of Anisotropy
Degree of Anisotropy
l Rt R
Af ≡ 1 − = 1− 1 = 1− 1
hf Rv t Rv
•For isotropic etching:
Rl = Rv and Af = 0
etch rate
% CF4 added O2
Damage in Reactive Ion Etching (RIE)
•Typical ion flux of 1015 ions/cm2 are delivered at energies of
300 to 700 eV in a RIE.