2SK556,2SK557 _— BREDA FOIA Yay NF+ A MOS FET SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING fais (3920) (aed) Cimon BEF eAUMROS AIMS ORME nn See MAXIMUM CHANNEL DISSIPATION ARE Vos | 0 | s00 | Vv ove vob YA EE] vw | ce | ae |v koe 4 > &@ tt} b 12 2 A | “BRR PUG HK | do intw® 48 cy A a — “> a] 2 fe [aT [ RR wo | 10 | w wo | io |e ql sti] vise] - NO 2 Pw nm ly ees i Tae , 2 saa 108) MGM ELECTRICAL CHARACTERISTICS (Ta=25) a a | sim “et Conlon = VAE-7— RAMEE | Vanes | atom, Vernd ao —| -[ sm) -] -[v Fahey AM MRE | Vanes 100A, Vos +15 —| +15 Vv yt t © itt | tess —| +10 =| +10) «A FoR 4 4 Toss — 20} =r = SE) Vesun | _lo=ima, Vo 20[ —| «o] 20] —| «ol v Bos Te=6A, Ves=10V" =| oa] oss) —[oas] oso} 0 MRT RE o> x [ly T=6A, Vero 10V" @] 10 «| —[s xR n * & "| 2050) — 2050| —| oF it n = a Vos=10V, Vos=0, f=1MHz =| vol —] =| m0[ —[ or 2 @ @ @ % =f =| 0) [oF Poa ee al — 25| —[ me we bw) em (=[es] -T [05] —[ ms See fo=6A, Ves=10V, Ri“ “= et t= * 8 = sf — | — [om ras Teale, Voss =o =| ae Pv = Tes 1A, Ves=0, dir/di= 10/8 | eo) eo] =| ns + aap @HITACHI 781