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IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 30, NO.

12, JUNE 15, 2018 1123

Silicon Nanowire Optical Rectangular Waveguide


Biosensor for DNA Hybridization
Ritu Raj Singh , Student Member, IEEE, and Vishnu Priye, Senior Member, IEEE

Abstract— Silicon nanowire optical rectangular waveguide much more effective to detect analytes as compared to
(SNORW)-based biosensor is proposed for the first time to detect other plasmonic biosensors [7]. However, optical plasmonic
deoxyribonucleic acid (DNA) hybridization. It works on the waveguide or hybrid plasmonic waveguide have high loss and
principle of detecting the change in refractive index during the low propagation length as compared to dielectric waveguide.
hybridization process when double strand DNA splits into single DNA hybridization can be realized by using both plasmonic as
strands of DNA or two single strands renaturate into a double
strand DNA. Considering the fabrication on 220- and 330-nm
well as dielectric waveguide [8]–[10]. Silicon waveguide with
silicon technology, first a typical configuration of SNORW is its inherent advantage of low material cost can be applied to
optimized to provide physical compactness and high-power con- DNA hybridization sensing using horizontal [8] and vertical
finement. Next, parameters characterizing link layer and DNA slot waveguides [9], fabricated on Silicon-on-Insulator (SOI)
are added, and change in power confinement is ascertained substrate. In slot waveguides confinement of power is in low
when double strand DNA (dsDNA) splits into two single strand index region with high sensitivity have been reported for DNA
DNA (ssDNA) or two ssDNA renaturate to form a dsDNA. hybridization [8], [9]. Horizontal slot waveguides [8] have
A mean to enhance the difference in power confinement in the high surface to volume ratio than vertical slot waveguides [9],
presence of 100% ssDNA and 100% dsDNA is also proposed. hence horizontal slot waveguide is better DNA hybridization
As the splitting/renaturation of DNAs is a slow process, power sensing device as compared to vertical slot waveguide.
confinement when different percentages of dsDNA and ssDNA
Current literatures have acknowledged that an arrangement
coexist is also evaluated.
of silicon nanowires array on silicon oxide substrate can work
Index Terms— Biosensors, optical sensing, SNORW, silicon as an opical waveguide, and follow the same principle of guid-
photonics, DNA hybridization, silicon nanowire. ance as of slot waveguide. In such silicon nanowire optical rec-
tangular waveguide, the light is highly confined in low refrac-
I. I NTRODUCTION tive indexed nano-slots between silicon wires, resulting strong
intraction between light and sensing material. Moreover, sil-
D UE to recent technological advancement in photonic inte-
grated circuits, silicon waveguides have been used in dif-
ferent biosensing applications. Recently, label-free biosensing
icon nanowire based waveguides have very high surface to
volume ratio. Thus, the power confining ability and field
has gained considerable attention by researchers to overcome distribution are highly sensitive [10], [11] to the slight change
the difficulties associated with labeled biosensing [1], [2]. in refractive index of measurand. Silicon nanowire optical
In biosensing, the development of an effective DNA-sensing rectangular waveguide shows advantage of high confinement
system is extremely important, in which technologies for factor, high sensitivity, small size, easily integrable, fast
DNA hybridization are currently under intense investigation response and highly selective with low power consumption.
by researchers worldwide. The complicated functionalization In this letter, a detailed investigation for optical sensing of
process involved in DNA hybridization can be overcome by DNA hybridization is proposed using Silicon Nanowire Opti-
using label free detection involving linker layer rather than cal Rectangular Waveguide (SNORW). Characteristic proper-
conventional targeted DNA sequence [3]. In DNA hybridiza- ties like power confinement, mode field intensity, normalized
tion process, breaking of hydrogen bonds between comple- power and waveguide sensitivity are successfully studied for
mentary base pairs of dsDNA results in ssDNA; whereas optimized dimensions. The change in refractive index during
ssDNA of two species when allowed to renaturate to yield the hybridization process is identified for the different SOI
hybrid DNA. Similar strands join together and form comple- fabrication technologies. Renaturation and separation through
mentary base pairs by reforming hydrogen bonds. The degree power confinement when different percentages of dsDNA and
of similarity between two species can be estimated by DNA ssDNA coexist are evaluated.
hybridization percentage.
In recent years, optical biosensors based on dielectric II. G EOMETRY OF SNORW
and plasmonic waveguides [4]–[6] are atracting attention of In Silicon Nanowire Optical Rectangular Waveguide
many researchers worldwide. Research has shown that opti- (SNORW), silicon wires are mainly processed by diffusion
cal sensors with gold layer in plasmonic waveguide are process on Au nano-particles, in which spherical Au particle
Manuscript received April 22, 2018; accepted May 3, 2018. Date of publi- yield cylindrical shaped silicon nanowires. Accordingly, ver-
cation May 10, 2018; date of current version May 23, 2018. (Corresponding tically grown cylindrical 2-dimensional periodic array pattern
author: Ritu Raj Singh.) having circular cross-section is shown in Fig. 1(a). SNORW
The authors are with the Electronics Engineering Department, IIT is developed in accordance to Silicon On Insulator (SOI)
(Indian School of Mines) Dhanbad, Dhanbad 826004, India (e-mail:
riturajsingh64@gmail.com; vish.ism99@gmail.com).
technology, in which fused silica (SiO2 ) as a substrate is
Color versions of one or more of the figures in this letter are available used. The silicon wires have cross sectional dimension of
online at http://ieeexplore.ieee.org. few nanometers, and are named as nanowires or nanorods.
Digital Object Identifier 10.1109/LPT.2018.2835152 These nanorods collectively form a waveguide and support
1041-1135 © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
1124 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 30, NO. 12, JUNE 15, 2018

Fig. 1. Schematic of SNORW for detection of DNA hybridization.


(a) SNORW structure; (b) cross sectional view (x-y plane) with linker and
DNA layer; and (c) top view (x-z plane) of single silicon nanowire.

optical wave propagation with dominant Quasi-TE mode.


Gaps between these nanowires holds field intensity and mode
distribution inside lower refractive index material.
Here, SNORW is utilized to detect DNA hybridization, for
which silicon nanowires are coated with Silanes which acts
as a linker/glue [9], [12] between silicon and DNA. Linker
of 1nm [9] width and DNA layer is glued over linker layer
with fixed width of 8nm as shown in Fig. 1(b) and Fig. 1(c),
where ‘h’, ‘g’ and ‘d’ represents height, gap and diameter
of silicon rods respectively with “k” number of wires in one
row of SNORW structure. The entire arrangement of SNORW Fig. 2. Power confinement of water filled SNORW cladding with
with linker and DNA is kept inside water (H2 O) as shown (a) g = 10nm; (b) g = 15nm; and (c) g = 20nm.
in Fig. 1(b). The top view of one silicon nanorod is shown
in Fig. 1(c). nanowires on SiO2 substrate in arrayed forest pattern and the
‘k’ ranges from 5 to 40 is investigated. Power confinement
III. P OWER C ONFINEMENT OF SNORW at operating wavelength of 1550nm for various SNORW
To increase the robustness of the proposed SNORW struc- parameters combinations are shown in Fig. 2. By analysing
ture, it is essential to calibrate all the parameters at a specific Fig. 2(a), 2(b) and 2(c), it can be clearly observed that after
value to obtain maximum efficiency and compactness in the k = 15 the power confinement gets saturated. Thus, k = 15 is
structure. By Finite Element Method (FEM) based optical most suitable for proposed structure. Again by considering ‘g’
modal analysis the field intensity mode pattern is obtained. parameter estimation of 10nm, 15nm and 20nm as exhibited
Dominant Quasi-TE optical mode is found to be propagated in Fig. 2(a), 2(b) and 2(c) respectively, it can be determined
inside the gap regions between nanorods. The proportion of that g = 10nm have maximum power confinement inside gap
power inside the gap regions to the entire cross-sectional area region of SNORW. To satisfy the need of proposed structure
is termed as power confinement. The power confinement (g ) to be compact, the diameter of each nanowire is calibrated
can be expressed by the mathematically simplified equation as: to 30nm. As it can be seen in Fig. 2(a) that maximum power
 confinement is provided at d = 40nm, however by increasing
Gappings | E(x, y) | d x d y
2
g =  (1) the diameter to 40nm the structure compromises the compact-
Total | E(x, y) | d x d y
2 ness consequently. So, the better option would be to compro-
mise with the diameter = 30nm rather then the compactness of
The optimization of structure is carried out by taking the sensor. Hence, the optimization of the proposed SNORW
cladding as H2 O without linker and DNA. The refractive index structure for peerless performance, the parameters ‘k’, ‘g’ and
of Si, SiO2 and H2 O are 3.476, 1.444 and 1.31 individually. ‘d’ are calibrated at 15, 10nm and 30nm respectively.
For illustrative purpose, the height of silicon rods are fixed
to 220nm SOI technology. Certain parameters such as ‘k’,
‘g’ and ‘d’ are thoroughly examined to provide maximum IV. R ESULT AND D ISCUSSION
throughput power. The power confinement is calculated by The optimized structure of SNORW with water as cladding
varying the diameter of silicon nanorods from 10nm to 40nm material is now implemented for DNA hybridization sensing.
in steps of 10nm and varying gap between adjacent nanorods Firstly, deposit of linker layer of 1nm thickness on the
from 10nm to 20nm in steps of 5nm. SNORW with ‘k’ silicon wire surface is considered. Consequently, 8nm thick
SINGH AND PRIYE: SNORW BIOSENSOR FOR DNA HYBRIDIZATION 1125

Fig. 3. (a) Field Distribution, and (b) x-cut field profile of optimized SNORW
for 100% ssDNA and dsDNA with h = 220nm, d = 30nm, g = 10nm
and k = 15.
Fig. 4. Power confinement in DNA versus nanorod height of SNORW with
DNA layer is applied over the linker surface. The whole d = 30nm, g = 10nm and k = 15.
arrangement of SNORW with linker and DNA is submerged
into water. The refractive index of linker, ssDNA and dsDNA than dsDNA as a sensing layer, former having high power
are 1.42, 1.456 and 1.53 respectively [13], [14]. The optical confinement than the latter. For silicon nanorod height ranging
waveguide properties due to change in refractive index during from 200nm to 340nm, 220nm and 330nm are Standard silicon
the hybridization process when double strand DNA splits into height technologies for SOI fabrication. So, both these heights
single strands of DNA, or two single strands renaturate into are taken into consideration for better analysis. Power con-
a double strand DNA is thoroughly explored at communica- finement of 43.30% and 54.19% is obtained for ssDNA with
tion wavelength of 1550nm, where sources and detectors are h = 220nm and 330nm respectively. After complete renatura-
readily available. tion to dsDNA, power confinement decreases to 41.22% and
A. Mode Field Distribution 50.64% for h = 220nm and 330nm respectively.
The optimized SNORW structure with k = 15, g = 10nm
and d = 30nm, along with 220nm standard height of C. Separation of dsDNA
silicon-wire in SOI fabrication technology is utilized to get The conversion of dsDNA to ssDNA progressively modifies
mode field distribution. Field intensity pattern for SNORW the refractive index of dsDNA–ssDNA concoction. The refrac-
is calculated for the dominant fundamental quasi-TE mode tive index for different percentage fraction of dsDNA–ssDNA
and shown in Fig. 3(a). Impact on the variation of mode composition is acquired by Lorentz-Lorenz mixing rule [15]
field profile for 100% ssDNA and 100% dsDNA as sensing given in Eq. (2), as shown at the bottom of this page, which
measurand layer is shown in Fig. 3(b). Optical waveguide to is rearranged to get composition refractive index by Eq. (3),
act as an optical bio-sensing device should requisite to vary as shown at the bottom of this page.
its mode field intensity pattern by changing the refractive Here φa and φb are volume fractions correspond to refrac-
index of measurand layer. tive index na and nb respectively. Notation ‘a’ and ‘b’ are used
Field intensity inside linker region is higher than that of for representing ssDNA and dsDNA respectively. In integrated
DNA region due to comparatively low refractive index of optical bio-sensors, any change in chemical parameter of
linker than ssDNA and dsDNA, so the spikes are acquired measurand will vary the refractive index. This variation in
between silicon-wires and DNA layer. Additionally, the level refractive index affects the effective mode propagation. The
of field intensity in sensing measurand layer increases when probability of detecting various levels of dsDNA–ssDNA in a
dsDNA gets separated into two ssDNA, therefore the intensity composition can be estimated by evaluating guided power in
inside sensing layer for 100% ssDNA is higher than that cladding region with change in refractive index due to the mix-
of 100% dsDNA. However, increment in the refractive index ture. Likewise, the variation in field distribution profile affects
contrast between silicon nanorods and measurand layer results the sensitivity performance of the waveguide. So, an optical
in decrement of field intensity inside linker layer. waveguide to work as a bio-sensor, variation in effective index
should vary its guiding power and sensitivity. The normal-
B. Impact of ‘h’ on Power Confinement ized power in measurand zone is the ratio of electric field
The next parametric variable of SNORW is height of intensity in nano-slot of SNORW for DNA composition to the
silicon nanorods (h). Height of nanorods are varied from field intensity in nano-slots for initial DNA type. However,
200nm to 340nm while keeping other parameters at its opti- waveguide sensitivity is the ratio of change of waveguide
mum value (i.e. k = 15, d = 30nm and g = 10nm). Impact of effective refractive index to the refractive index of initial DNA.
h on power confinement of SNORW with 100% ssDNA and Fig. 5(a) shows that for SOI standard height technology of
100% dsDNA as sensing layer is shown in Fig. 4. h = 220nm, normalized power increases by 3.70% for 50%
The increase in h value results in increase in power con- change in fraction from pure dsDNA to ssDNA–dsDNA com-
finement value. Because of lower refractive index of ssDNA position. The normalized power level significantly increases by

   
n 2ab − 1 n 2a − 1 n 2b − 1
= φa + φb (2)
n 2ab + 2 n 2a + 2 n 2b + 2
 
(n 2a + 2)(n 2b + 2) + 2 φa (n 2a − 1)(n 2b + 2) + φb (n 2a + 2)(n 2b − 1)
n ab =  (3)
(n 2a + 2)(n 2b + 2) − φa (n 2a − 1)(n 2b + 2) + φb (n 2a + 2)(n 2b − 1)
1126 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 30, NO. 12, JUNE 15, 2018

power confinement, mode field intensity and normalized power


have been studied by applying full vectorial finite element
method. The optimum power confinement has been obtained
by appropriately designing the structure parameters inside
water as a cladding material. For high power confinement and
physical compactness, k = 15, d = 30nm and g = 10nm were
obtained as optimized SNORW parameters.
Mode field intensity has been obtained by adding linker and
DNA layer to SNORW structure, which shows that any change
Fig. 5. (a) Normalized power, and (b) sensitivity dependence on percentage in refractive index is detected with corresponding change in
separation of dsDNA. field intensity level. Silicon wires of height 220nm and 330nm
correspond to standard silicon fabrication technology used
for DNA hybridization. The change in normalized power is
ascertained in case of separation of dsDNA strands when
double strand DNA splits into two single strand DNA. Also,
the case of renaturation when two single strand DNA combines
to form a double strand DNA has been thoroughly investigated
with a change in the fractional composition of ssDNA and
dsDNA. The difference in the power confinement in presence
of 100% ssDNA and 100% dsDNA have been found as 8%
for 220nm and 12% for 330nm SOI technology, respectively.
Fig. 6. (a) Normalized power, and (b) sensitivity dependence on percentage Renaturation and separation of DNAs are slow processes,
renaturation of ssDNA for h = 220nm and 330nm.
the power confinement when different percentages of dsDNA
and ssDNA coexist has also been evaluated.
8% when dsDNA completely separate into ssDNA. However,
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