IGBT

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology
withsoft,fastrecoveryanti-paralleldiode

IKW50N60H3
600Vhighspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl
 IKW50N60H3
Highspeedswitchingseriesthirdgeneration

HighspeedIGBTinTrenchandFieldstoptechnology

Features: C

TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C G
•qualifiedaccordingtoJEDECfortargetapplications E
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKW50N60H3 600V 50A 1.85V 175°C K50H603 PG-TO247-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

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Maximumratings
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 100.0 A
TC=100°C 50.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A
Turn off safe operating area
- 200.0 A
VCE≤600V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 60.0 A
TC=100°C 30.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 200.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=150°C 5
PowerdissipationTC=25°C 333.0
Ptot W
PowerdissipationTC=100°C 167.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6 mm (0.063 in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.45 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 1.05 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

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ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V
VGE=15.0V,IC=50.0A
Tvj=25°C - 1.85 2.30
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 2.10 -
Tvj=175°C - 2.25 -
VGE=0V,IF=30.0A
Tvj=25°C - 1.65 2.05
Diode forward voltage VF V
Tvj=125°C - 1.67 -
Tvj=175°C - 1.65 -
Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.1 5.1 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40.0 µA
Tvj=175°C - - 3500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 30.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 2960 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 116 - pF
Reverse transfer capacitance Cres - 96 -
VCC=480V,IC=50.0A,
Gate charge QG - 315.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤400V,
Max. 1000 short circuits IC(SC) tSC≤5µs - - A
Time between short circuits: ≥ 1.0s Tvj=150°C 330

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SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 23 - ns
Rise time tr VCC=400V,IC=50.0A, - 37 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=7.0Ω,Lσ=90nH, - 235 - ns
Fall time tf Cσ=60pF - 24 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.45 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.91 - mJ
Total switching energy Ets - 2.36 - mJ

Diode reverse recovery time trr Tvj=25°C, - 130 - ns

Diode reverse recovery charge Qrr VR=400V, - 0.88 - µC
IF=30.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 16.9 - A
Diode peak rate of fall of reverse
dirr/dt - -598 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 23 - ns
Rise time tr VCC=400V,IC=50.0A, - 31 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=7.0Ω,Lσ=90nH, - 273 - ns
Fall time tf Cσ=60pF - 24 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.42 - mJ
Turn-off energy Eoff diode reverse recovery. - 1.13 - mJ
Total switching energy Ets - 2.55 - mJ

Diode reverse recovery time trr Tvj=175°C, - 217 - ns

Diode reverse recovery charge Qrr VR=400V, - 2.40 - µC
IF=30.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 22.9 - A
Diode peak rate of fall of reverse
dirr/dt - -307 - A/µs
recoverycurrentduringtb

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140

120 100
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
100
tp=1µs

10µs
80 10
50µs

100µs
60
200µs

500µs
40 TC=80° 1
DC
TC=110°

20 TC=80°

TC=110°

0 0.1
1 10 100 1000 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,
rG=7Ω)

350 100

90
300
80
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

250 70

60
200

50

150
40

100 30

20
50
10

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

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200 200

175 VGE=20V 175 VGE=20V

17V 17V
150 150
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
15V 15V

13V 13V
125 125
11V 11V

9V 9V
100 100
7V 7V

75 5V 75 5V

50 50

25 25

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

200 3.5
Tj=25°C IC=25A
Tj=175°C IC=50A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

IC=100A

3.0
150
IC,COLLECTORCURRENT[A]

2.5

100

2.0

50
1.5

0 1.0
5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

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td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100

100

10 10
10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V, (ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7Ω,testcircuitinFig.E) IC=50A,testcircuitinFig.E)

6.0
typ.
min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

5.5 max.

td(off)
tf 5.0
td(on)
t,SWITCHINGTIMES[ns]

tr
100 4.5

4.0

3.5

3.0

2.5

10 2.0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=50A, (IC=0,8mA)
rG=7Ω,testcircuitinFig.E)
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8 5
Eoff Eoff
Eon Eon
7 Ets Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
4
6

5
3

2
3

2
1

0 0
10 20 30 40 50 60 70 80 90 100 2 6 10 14 18 22
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V, (ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7Ω,testcircuitinFig.E) IC=50A,testcircuitinFig.E)

3.0 3.5
Eoff Eoff
Eon Eon
Ets Ets
3.0
2.5
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

2.5
2.0

2.0

1.5

1.5

1.0
1.0

0.5
0.5

0.0 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=400V,VGE=15/0V,IC=50A, (ind.load,Tj=175°C,VGE=15/0V,IC=50A,
rG=7Ω,testcircuitinFig.E) rG=7Ω,testcircuitinFig.E)
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16
120V
480V
14
VGE,GATE-EMITTERVOLTAGE[V]

12 1000
Cies
Coes

C,CAPACITANCE[pF]
Cres
10

6 100

0 10
0 50 100 150 200 250 300 350 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=50A) collector-emittervoltage
(VGE=0V,f=1MHz)

750 15
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]

tSC,SHORTCIRCUITWITHSTANDTIME[µs]

650
12

550

450

350

3
250

150 0
10 12 14 16 18 20 10 11 12 13 14 15
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤400V,startatTj=25°C) (VCE≤400V,startatTj≤150°C)

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1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
D=0.5 D=0.5
0.1 0.2 0.2
0.1 0.1
0.05 0.1 0.05
0.02 0.02
0.01 0.01
single pulse single pulse

0.01
0.01

i: 1 2 3 4 5 i: 1 2 3 4 5
ri[K/W]: 7.0E-3 0.03736378 0.09205027 0.1299574 0.1835461 ri[K/W]: 0.04915956 0.2254532 0.3125229 0.2677344 0.1951733
τi[s]: 4.4E-5 1.0E-4 7.2E-4 8.3E-3 0.07425315 τi[s]: 7.5E-6 2.2E-4 2.3E-3 0.01546046 0.1078904

0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance Figure 22. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)

300 3.0
Tj=25°C, IF = 50A Tj=25°C, IF = 50A
Tj=175°C, IF = 50A Tj=175°C, IF = 50A

250 2.5
Qrr,REVERSERECOVERYCHARGE[µC]
trr,REVERSERECOVERYTIME[ns]

200 2.0

150 1.5

100 1.0

50 0.5

0 0.0
800 900 1000 1100 1200 800 900 1000 1100 1200
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction Figure 24. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

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30 0
Tj=25°C, IF = 50A Tj=25°C, IF = 50A
Tj=175°C, IF = 50A Tj=175°C, IF = 50A
-100
Irr,REVERSERECOVERYCURRENT[A]

26

dIrr/dt,diodepeakrateoffallofIrr[A/µs]
-200

22
-300

-400
18

-500

14
-600

10 -700
800 900 1000 1100 1200 800 900 1000 1100 1200
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 25. Typicalreverserecoverycurrentasa Figure 26. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=400V) currentslope
(VR=400V)

100 2.6
Tj=25°C IF=15A
Tj=175°C IF=30A
90
2.4 IF=60A

80
2.2
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

70

2.0
60

50 1.8

40
1.6

30
1.4
20

1.2
10

0 1.0
0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardcurrentasafunction Figure 28. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

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PG-TO247-3

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vGE(t)
90% VGE
a b

a b

t
iC(t)

90% IC
90% IC

10% IC 10% IC
t

vCE(t)

td(off) tf td(on) tr
t

vGE(t)
90% VGE

10% VGE
t
iC(t)

2% IC
t

vCE(t)

2% VCE
t1 t2 t3 t4
t

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RevisionHistory
IKW50N60H3

Revision:2014-03-12,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2010-07-26 Preliminary datasheet
2.1 2013-12-10 New value ICES max limit at 175°C
2.2 2014-03-12 Max ratings Vce, Tvj ≥ 25°C

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81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.

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Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.

16 Rev.2.2,2014-03-12