TUnion Devices Semiconductor Materials

José Ricardo Castro González

Electronic Engineering,
Universidad Nacional Abierta y a Distancia - UNAD…
COD. 80.196.725
Mobile phone: 322 761 5417, joricastrog@gmail.com, October 2018.

is the half VCC, with this polarization the transistor amplified

I. INTRODUCCIÓN β times the input signal
In the electronic world, in all circuits can be found the
transistors and diodes, without exception. But we also have
unipolar devices also known as FETs or MOSFETs, This III. JUNTION FIELD EFFECT TRANSISTOR
unipolar devices, are also transistors, the difference between The field effect transistor (FET) is a three terminal device
bjt’s and the unipolars or JFET´s are the JFET´s are material with many similarities and important differences between him
P or material N, and other characteristics of the field effect and the BJT. The most important difference is the BJT is a
transistor controlled current, and the FET is controlled by voltage.
Once of the most important characteristics of the FET is
II. BIPOLAR JUNCTION TRANSISTOR its high input impedance.
In this article I will focus on BJT although there is The FETs have greater stability than the BJT when
another type of transistor. Bipolar junction transistor is a exposed to high temperatures; they are smaller than the BJT
combination between two p-types regions and n-type called which presents them an advantage for the chips of integrated
PNP transistor. It can also be two n-types and p-type called circuits
NPN transistor. A. ,Features
It’s formed for Emitter, Base and Collector, to activate
The fet has an extremely high input resistance of around
the device is necessary feed the Base, and serves as a switch
100 Megas.
or amplifier.
It has no offset voltage when used as a switch
The current the Emitter it´s the same of the Collector +
It is relatively immune to radiation
Base (though the base current is low respect the collector),
It has less noise than the BJT, more suitable for input
the transistor have a parameter beta β, this parameter indicate
stages of low level amplifiers.
how many times amplified the input signal.
Can be operated to provide great thermal stability.
To operating in active zone is necessary polarize the
circuit in the Q zone with a tension of B. ,Types
A. ,Features Bipolar Junction Transistor
Common Base
They have 3 zones: cutting zone, saturation zone and
Common Emisor
active zone.
Common Collector
The collector intensity is equal to β and base intensity.
Fiel Effect Transistor
The collector intensity is almost equal to emitter intensity.
Common Drain
The base-emitter voltage is 0.7 volts.
Common Gate
It´s drive for the current
Common Source
The conduction is for combined between electrons and
holes.
IV. CONCLUSIONS
Less stability in relation to the temperature but greater
sensitivity in the changes in the applied signal The BJTs and fets have many common characteristics but
big differences, the one that is most identified is that the BJT
B. ,Polarization amplify current and the FET voltage
Cutting zone is when don´t have current the base, the
collector-emitter voltage is equal to VCC, the base-emitter
voltage it´s lower to 0.7volts; the behavior is opened circuit
Saturation Zone is when the intensity collector is
maximum and not is proportional with intensity base, the
collector-emitter voltage is zero, the base-emitter voltage is
bigger to 0.7volts; the behavior is short circuit.
The active zone is the amplifier polarization, the base-
emitter voltage is 0.7 volts, and the collector-emitter voltage