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PII: S0272-8842(17)31920-X
DOI: http://dx.doi.org/10.1016/j.ceramint.2017.09.001
Reference: CERI16172
To appear in: Ceramics International
Received date: 7 July 2017
Revised date: 22 July 2017
Accepted date: 1 September 2017
Cite this article as: Mitsuhiro Okayasu, Tsukasa Ogawa and Yoshikazu Sasaki,
In situ TEM observations of microstructural characteristics of lead zirconate
titanate piezoelectric ceramic during heating to 1000°C, Ceramics International,
http://dx.doi.org/10.1016/j.ceramint.2017.09.001
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Abstract
The microstructural characteristics of lead zirconate titanate (PZT) ceramic at high
of lattice and microstructural formations. The PZT ceramic was heated from room
temperature to 1000C using a compact heating device within the TEM. It was found that the
internal stress at temperatures above 300C. Heating to more than 800C for a certain period
Keywords: In situ observation; TEM, PZT ceramic; Microstructure; Lattice structure; High
temperature
1. Introduction
The piezoelectric properties of lead zirconate titanate (PZT: Pb(Zr,Ti)O3) ceramics have led to
their widespread use in a number of engineering applications, for example as sensors and
actuators. The production process of bulk PZT ceramics can be briefly summarized as follows
[1]. Three different powders are employed to make PZT ceramic, including PbO, ZrO2 and
TiO2. PZT ceramic, made from the three powders, is crushed roughly to small particles. After
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the crushed ceramic has been dried, it is pre-heated at a temperature between 700C and
900C. Further crushing is conducted to produce fine grains, which are then mixed with a
binder based on an organic material, such as polyvinyl alcohol (PVA). After the mixture has
been pressed into a suitable shape to allow further machining, the binder is removed by
heating to 300–500C. The PZT ceramic is then calcined by heating to a high temperature
taken to avoid loss of lead as the volatile oxide PbO. After precise machining to the desired
shape, silver-based electrodes are coated onto the ceramic surfaces; these allow application of
an electric field of 2–3 kV/mm to the PZT ceramic at about 100C to obtain piezoelectric
properties.
It can be seen from the above description that the PZT ceramic is subjected to high
temperatures at several stages during its production. In addition, owing to their low cost, light
weight, and capability of miniaturization, PZT ceramics are used in the automotive and power
plant industries for sensing devices that need to be employed at high temperatures [2]. In
previous work, the piezoelectric properties of PZT ceramics have been assessed at different
temperatures within a specified range [3]. The results of these studies have demonstrated that
if the annealing temperature exceeds 700C, diffusion of titanium element within the PZT
ceramics occurs [4]. In situ X-ray diffraction studies of the crystallization of piezoelectric
ceramics of different chemical compositions, namely, lead titanate (PT) and lead zirconate
(PZ) as well as PZT, at temperatures in the range 380–500C have shown that the
crystallization temperatures increase in the sequence PT < PZ < PZT [5]. The crystallization
kinetics of textured (100)-PZT thin films on highly textured (111)-Pt have been investigated
in the temperature range 550–700C. It has been shown that crystallization proceeds by the
formation of globular, Zr-depleted, and Pb-rich particles that exhibit necklace patterns [6].
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to 1000C and in a frequency range of 100–600Hz [7], a sensitivity of 2.4 0.4 pC/g across
these ranges was found, indicating a low temperature coefficient. It has also been found that,
unlike ferroelectric polycrystalline materials, piezoelectric single crystals are not subject to
domain-related aging behavior despite their high electrical resistivity, and that they also
exhibit low losses with excellent thermal stability of their properties [8]. It can be seen from
the above results that the material properties of PZT ceramics are sensitive to temperature.
Therefore, the aim of the present work is to investigate the lattice and microstructural
characteristics of PZT ceramics via in situ TEM observation during heating of a sample.
The material used in this work was a commercial bulk PZT ceramic with piezoelectric
in Japan. The PZT ceramics were made with an average grain size of 5 μm, a density of 7.65
g/cm3 and Curie point of 295C. The PZT ceramic adopts a perovskite tetragonal structure
with aspect ratio c/a = 1.014 (a = 0.4046 nm and c = 0.4103 nm). An initial sample was
with an acceleration voltage of 200 kV), with in situ microstructural observations being
conducted at temperatures from 25C to 1000C, increasing at 1C/s. The sample used for
TEM observations was cut from the initial sample using a focused ion beam (FIB) technique:
thickness of the TEM samples are about 150 nm. To allow clear TEM observations at high
temperature, a compact heating system of Aduro500 (Protochips) was employed within the
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microscope. The TEM image was continuously monitored using a video camera.
spectroscopy (EDS) and electron backscatter diffraction (EBSD). For both of these
surfaces were polished to a mirror state using colloidal silica. EDS was carried out using a
and EBSD was carried out using a JEOL-JSM-7001F SEM with an acceleration voltage of 15
Fig. 1(a) shows TEM images of a PZT ceramic sample at different temperatures ranging from
room temperature to 1000C. About six grains can be seen, with varying brightness owing to
differences in the lattice orientation of the tetragonal structure. Increasing sample temperature
leads to changes in microstructural characteristics. As can be seen in Fig. 1(b), the dark region
in the sample at room temperature (enclosed by the dashed circle), which has a different
lattice orientation, disappears as the sample is heated to more than 100C. This may be
attributable to domain switching. In our previous work, the effect of thermal stress on domain
switching was investigated by EBSD analysis [9], and it was found that 90° domain switching
occurred significantly around 100C. However, in this case, the lattice orientation has not
been clarified directly, so further analysis will be required in the future. As the sample
uniform formations, as can be seen in Fig. 1(c). Note that, in this case, dislocations may be
affected, as the dislocation density could be reduced with increasing the sample temperature.
With increasing temperature, there is also a change in deformation twinning, as can be seen in
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Fig. 1(d): the width of twinning band increases when the sample temperature exceeds 400C,
and, in this case, the deformation twin disappears completely at about 529C. These results
suggest that internal stress in PZT ceramics could be removed by heating to more than 300C,
i.e., through an aging effect, and domain switching could occur at relatively low temperatures
of around 100C.
As the sample is heated to more than 500C, thermal expansion of the PZT ceramic
occurs, leading to distortion, as indicated in Fig. 1(e). In this case, several grains are strained
severely at 500C, and convexity along the grain boundaries is observed at 550C, resulting
from the high compressive stress. At a sample temperature of 500C, the internal stress
= 4 10-6 /C [10] and the elastic constant E = 50 GPa. However, further analysis to assess
the stress value would be needed to understand clearly the deformation characteristics.
microstructural characteristics around the grains, i.e., at the grain boundaries, when the
sample is heated to more than 800C, as indicated by the arrows in Fig. 1(a). In this case, the
grain boundaries become bright, and this bright zone expands as the sample temperature is
increased further to 1000C. It can be seen from the high-magnification image in Fig. 1(f) that
observations and EDS analyses were carried out before and after heating at 1000C for 0, 3,
10, and 30 min, and the results are shown in Fig. 2. Note that each of these investigations was
performed on almost the same area. The EDS analysis examined four chemical elements: Ti,
Zr, Pb, and O. As can be seen from the SEM images, the grain size decreases with increasing
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sample temperature, the grains start to collapse after heating to 1000C for 10 min, and a
nanocrystalline microstructure (or flake morphology [11]) is formed after heating for 30 min.
Because bulk PZT ceramic was used in this study, a longer heating time (30 min) was needed
to obtain the nanocrystalline microstructure than was the case for the thin TEM sample. The
results of the EDS mapping showed that the distribution of the chemical elements changed on
heating. The element of Pb was sublimated with increasing the heating time, and rest of Pb
element was randomly distributed. Similar distribution was seen for Ti element. Interestingly,
in the sublimated zones (Pb), Zr element was detected, e.g., segregation of ZrO2. From Fig.
2(b), it can be seen that the amount of Pb clearly decreases with increasing heating time,
where PbO vaporization may have occurred leading to the segregation of ZrO2 [12]. On the
other hand, amount of O increases slightly due to the oxidation with Zr. It has been reported
that segregation of PbO is obtained at the grain boundaries [11,13], but it could not be
detected in our PZT ceramic. It has been also reported in the previous work that at annealing
temperatures exceeding 700C, there is diffusion of titanium element in PZT ceramics [4], but
EBSD analyses were carried out on the sample before and after heating at 1000C for 10 min.
The results are shown in Fig. 3. Note that the heated PZT ceramic was observed both near the
surface and inside the sample, namely, at several micrometers depth. Flake morphology of the
sample was observed on the surface of the PZT ceramic. As can be seen, before the heating
process, the lattice orientation is random, which is the normal lattice structure reported in
previous work [14]. However, it is clear that after heating to 1000°C, the lattice orientation
becomes {100} both near the surface and inside the sample; i.e., there is aggregation of
crystalline structure. Because of the distortion of the surface of PZT ceramic, thermal
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expansion occurred in each grain. To elucidate the material properties of the PZT ceramic
after heating, an attempt was made to conduct an EDS analysis inside the sample. The results
implies no or weak sublimation of the ceramic. These results suggest that lattice orientation of
PZT ceramic can be imposed by the application of thermal energy. To verify this, TEM
observation was further carried out to understand the crystal orientation characteristics. Fig. 4
depicts the TEM image of PZT ceramic at 1000C for about 5 min. As seen, clear lattice
formation was detected, and the lattice orientation is different depending on the grain, which
is different trend compared to the result of EBSD. The reason behind this may be attributed to
the constraint condition, i.e., free surface for the TEM sample may make lattice formation
randomly. In contrast, bulk PZT ceramic for EBSD analysis can lead to the strong constraint
condition, which can be verified by the distorted sample surface, resulting in the organized
lattice formation. However, further analysis is required to interpret the different lattice
4. Conclusions
detected around 100C. The initially disordered lattice changes to a uniform structure owing
to a reduction in internal stress when the temperature exceeds 300C. A further increase in
sample. Finally, heating to more than 800C leads to the formation of an ordered
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nanocrystalline microstructure.
References
1 Fuji Ceramics Co., Technical Handbook. Fuji Ceramics Co., p.15 (in Japanese).
4 C.-L. Dai, F.-Y. Xiao, C.-Y. Lee, Y.-C. Cheng, P.-Z. Chang, S.-H. Chang, Thermal effects
in PZT: diffusion of titanium and recrystallization of platinum, Mater. Sci. Eng.
A384(2004)57–63.
5 A.P. Wilkinson, J.S. Speck, A.K. Cheetham, In situ C-ray diffraction study of
crystallization kinetics in PbZr1-xTixO3(PZT, x = 0.0, 0.55, 1.0), Chem. Mater. 6(1994)750–
754.
6 M.E.-Souni, A. Piorra, On the crystallization kinetics of solution deposited PZT thin films,
Mater. Res. Bulletin 36(2001)2563–2575.
8 S. Zhang, F. Yu, Piezoelectric materials for high temperature sensors, J. Am. Ceram. Soc.
94(2011)3153–3170.
10 Murata Manufacturing Co., Ltd. Piezoelectric Ceramic Sensor, p.8 (in Japanese).
11 S.M. Gupta, A.R. Kulkarni, Role of excess PbO on the microstructure and dielectric
properties of lead magnesium niobate, J. Mater. Res. 10(1995)953–961.
13 C.L. Li, C.-C. Chou, Microstructures and electrical properties of lead zinc niobate-lead
titanate-lead zirconate ceramics using microwave sintering, J. Eur. Ceram. Soc.
26(2006)1237–1244.
Fig. 1. TEM micrographs of PZT ceramic at different temperatures. (a) Several grains at
temperatures ranging from 25C to 1000C. (b) Change in lattice orientation. (c) Disordered
lattice. (d) Deformation twinning; (e) Thermal expansion; (f) Nanocrystalline microstructure
and sublimation of Pb.
Fig. 2. (a) SEM micrographs and EDS analyses at different temperatures. (b) Changes in
chemical composition with increasing temperature.
Fig. 3. EBSD analysis of PZT ceramic before and after heating to 1000C, observed both near
the surface and inside the sample.
Fig. 4. TEM micrographs of PZT ceramic at 1000C, showing the lattice formation.
(a) Several grains at temperatures ranging from 25C to 1000C.
25C 200C
300C 600C
900C 1000C
zone)
Fig. 1(a)
(b) Change in lattice orientation
25C 50C 75C 100C
0.2µm
Fig. 1(b)(c)
(d) Deformation twinning
25C 400C
Twin
528C 529C
700C
0.5µm
Fig. 1(d)
(e) Thermal expansion and internal strain
500C 550C
GB
0.5µm High internal strain
Nanocrystalline
Fig. 1. TEM micrographs of PZT ceramic at different temperatures: (a) Several grains at temperatures ranging from 25C to 1000C;
(b) Change in lattice orientation; (c) Disordered lattice; (d) Deformation twinning; (e) Thermal expansion and internal strain; (f)
Nanocrystalline microstructure and sublimation of Pb.
(a) SEM micrographs and EDS analysis
Before heating 1000C for 3min 1000C for 10 min 1000C for 30 min
SEM
2µm Nanocrystalline
Pb
Sublimation of Pb
O
Zr
Segregation of Zr
Ti
Segregation of Ti
Fig. 2(a)
(b) Amount of the chemical elements
Pb O
70 70
Amount of Pb element, %
60 60
Amount of O element, %
50 50
40 40
30 30
20 20
10 10
0 0
0 10 20 30 0 10 20 30
Heating time at 1000C, min Heating time at 1000C, min
Zr Ti
70 70
Amount of Zr element, %
Amount of Ti element, %
60 60
50 50
40 40
30 30
20 20
10 10
0 0
0 10 20 30 0 10 20 30
Heating time at 1000C, min Heating time at 1000C, min
Fig. 2. (a) SEM micrographs and EDS analyses at different temperatures. (b) Changes in chemical composition with increasing temperature.
Before heating After heating at 1000C for 10 min
Surface Inside sample (several µm) Surface
IQ IPF+IQ IQ IPF+IQ IQ IPF+IQ
Distorted Flake
surface shape
110
001 100
Pole figure
5µm
Fig. 3. EBSD analysis of PZT ceramic before and after heating to 1000C, observed both near the surface and inside the sample.
Grain boundary
Fig. 4. TEM micrographs of PZT ceramic at 1000C, showing the lattice formation.