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TO-3PF 16A Triac

TM1641B-L, TM1661B-L
■ Features External Dimensions 5.5± 0.2
(Unit: mm) 3.2± 0.2 3.45± 0.2
●Repetitive peak off-state voltage: VDRM=400, 600V

5.5± 0.2
9.5± 0.2
●RMS on-state current: IT(RMS)=16A

23± 0.3
●Gate trigger current: IGT=30mA max (MODE , , ) a 3.35± 0.2

1.6
3.3
b
●Rate-of-rise of off-state commutation voltage: (dv/dt)c=10V/µs min.

(16.2)
+0.2
●Isolation voltage: VISO=2000V(AC, 1min.) 1.75–0.1
+0.2
2.15 –0.1
●UL approved type available +0.2 +0.2
1.05–0.1 0.65–0.1
5.45± 0.1 5.45± 0.1

15.6± 0.2
1.5 4.4 1.5 (1). Terminal 1 (T1) a. Part Number
(2). Terminal 2 (T2) b. Lot Number
(3). Gate (G)

(1) (2) (3) Weight: Approx. 6.5g

■Absolute Maximum Ratings

Ratings
Parameter Symbol Unit Conditions
TM1641B-L TM1661B-L
Repetitive peak off-state voltage VDRM 400 600 V
RMS on-state current IT(RMS) 16 A Conduction angle 360°, Tc=92.5°C
Surge on-state current ITSM 160 A 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage VGM 10 V f 50Hz, duty 10%
Peak gate current IGM 2 A f 50Hz, duty 10%
Peak gate power loss PGM 5 W f 50Hz, duty 10%
Average gate power loss PG(AV) 0.5 W
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Isolation voltage VISO 2000 Vrms 50Hz Sine wave, RMS, Terminal to Case, 1 min.

■Electrical Characteristics
Ratings
Parameter Symbol Unit Conditions
min typ max
0.1 2.0 VD=VDRM, RGK=∞, Tj=125°C
Off-state current IDRM mA
0.1 VD=VDRM, RGK=∞, Tj=25°C
On-state voltage VTM 1.6 V ITM=20A, TC=25°C
+ +
0.8 1.5 T2 , G
+ –
0.7 1.5 T2 , G
Gate trigger voltage VGT V VD=6V, RL=10Ω, TC=25°C – –
0.8 1.5 T2 , G
– +
1.0 T2 , G
+ +
12 30 T2 , G
+ –
16 30 T2 , G
Gate trigger current IGT mA VD=6V, RL=10Ω, TC=25°C – –
25 30 T2 , G
– +
70 T2 , G
Gate non-trigger voltage VGD 0.2 V VD=1/2×VDRM, Tj=125°C
Holding current IH 25 mA Tj=25°C
Rate-of-rise of off-state commutation voltage (dv/dt)c 10 V/µs VD=400V, Tj=125°C
Thermal resistance Rth 1.8 °C/W Junction to case

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TM1641B-L, TM1661B-L

vT – iT Characteristics (max) ITSM Ratings IT(RMS) – PT(AV) Characteristics

100 180 Initial junction temperature
20
Tj=125°C Full-cycle sinewave

Average on-state power PT(AV) (W)

160 ITSM Conduction angle :360°

Surge on-state current ITSM (A)

10 ms
16
iT (A)

140 1cycle
Tj =125°C
10 Tj =25°C 120
On-state current

12
100

80
8
1 60

40
4
20
0.1 0 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 5 10 50 100 0 4 8 12 16
On-state voltage vT ( V ) Number of cycle RMS on-state current IT(RMS) (A)

IT(RMS) – Tc Ratings Gate Characteristics VGT temperature characteristics

(Typical) (VD =6V RL =10 Ω)
150 50 2.0
Full-cycle sinewave Mode Mode
Conduction angle :360°
125

Gate trigger voltage VGT (V)

1.6
Case temperature TC (°C)

VGM =10V
10
vGF (V)

100 PGM =5W

1.2
PG(AV) =0.5W
Gate voltage

75 –40°C VGT=1.8V
–40°C IGT=75mA

IGM =2A
25°C IGT=30mA

25°C VGT=1.5V 0.8

1
50

0.4
25
VGD=0.2V
0 0 0
0 4 8 12 16 20 1 10 100 1000 5000 –40 –25 0 25 50 75 100 125
RMS on-state current IT(RMS) (A) Gate current iGF (mA) Junction temperature Tj (°C)

IGT temperature characteristics IH temperature characteristics IL temperature characteristics

(Typical) (Typical) (Typical)
(VD =6V RL =10 Ω) (RG-K =1kΩ) (RG-K = ∞ )
100 1000 1000
Mode
50
Gate trigger current IGT (mA)

Latching current IL (mA)

Holding current IH (mA)

100 100

10

5 10 10

1 1 1
–40 –25 0 25 50 75 100 125 –40 –25 0 25 50 75 100 125 –40 –25 0 25 50 75 100 125
Junction temperature Tj (°C) Junction temperature Tj (°C) Junction temperature Tj (°C)

rth( j-c) – t Characteristics

5
Transient thermal resistance rth (j-c) (°C/W)

0.5
1 10 102 103 104 105
t, Time (ms)

49