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ABSTRACT
Now a days Computer systems are designed to perform maximum number of functions with high speed and less
amount of power consumption, reduced propagation delay. In the chips, the numbers of circuits are increasing day
by day. So the Electronics industry always faces the challenge of performance of transistor at optimum level. To
meet this requirement, the miniaturization of transistors.
This thesis explains the analysis of the performance of single-port and double-door MOSFETs with the presence of
noise. The performances of the MOSFET are degraded when different noises appear in the image compared to the
previous MOSFETmodel without noise. This is also the behavior of the radio frequency (RF) DG MOSFET
analyzed and verified up to 1 MHz with measurements in a wide range of polarization voltages and channel lengths.
A significant variation in the spectral density of the noise was observed .
1. INTRODUCTON
The demand for low-power and high-speed circuits, The supply voltage also scales down with device
and development of device fabrication technology scaling, however, it cannot follow the speed of
continue to drive the scaling down MOS (Metal channel
Oxide Semiconductor) devices under 0.1μm length reduction. Therefore, the maximum electric
channel length. Now a days, many CMOS field for a minimum size MOS transistor rises to the
(Complementary metal oxide semiconductor) circuits tens of volts/μm level. The carriers in the device are
are operated with 1.2V supply voltage and some are accelerated by this electric field and acquire
running in GHz range of operating frequency. At this excessive kinetic energy. These high energy carriers
level of device scaling, some dimensions of the MOS are called hot carriers because they have effective
device, such as gate thickness became comparable temperatures of several thousands of carrier
to atomic dimensions, hence quantum mechanical temperatures. To extract parameters of such scaled
corrections in device simulation are indispensable. devices for circuit simulations, AC simulations
Also, the operating voltage cannot be scaled down accounting for advanced transport effects are
with the same ratio as that for the device in order to required. This model is also useful for noise
maintain sufficient threshold voltage that limits simulations, where the carrier energy has an
leakage current within a reasonable level, therefore important role in noise generation.The noise
the electric field in the device become so large that parameters in a short channel MOS device are
accelerated carriers can have kinetic energy more reported to increase as the channel length scales
than ten times than that thermal energy. down. However, the quantity and origin of the
increased noise is still debatable.
The main objective of this thesis is to investigate
performance of the MOSFET in presence of noise
and
also study the behaviour of radio frequency (RF) DG
MOSFET is analysed and verified up to 1MHz with
measurements over a wide range of bias voltages
and channel lengths. Significant variation in the
noise
spectral density has been observed.