FFB2907A / FMBT2907A / MMPQ2907A

Discrete POWER & Signal

Technologies

FFB2907A FMB2907A MMPQ2907A

E2 C2 B4
E4
B2 E1 B3
E3
C1 B2
C1 E2
B1
E1 C4
C2 B2 C4
C3
B1 E2 C3
pin #1 E1 pin #1 B1 C2
C2
C1
SC70-6 SuperSOT-6 SOIC-16 C1
Mark: .2F Mark: .2F

PNP Multi-Chip General Purpose Amplifier

This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 600 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

FFB2907A FMB2907A MMPQ2907A
PD Total Device Dissipation 300 700 1,000 mW
Derate above 25°C 2.4 5.6 8.0 mW/°C
RθJA Thermal Resistance, Junction to Ambient 415 180 °C/W
Effective 4 Die 125 °C/W
Each Die 240 °C/W

 1998 Fairchild Semiconductor Corporation

 FFB2907A / FMBT2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 60 V
Voltage*
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
IB Base Cutoff Current VCB = 30 V, VEB = 0.5 V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VBE = 0.5 V 50 nA
ICBO Collector Cutoff Current VCB = 50 V, IE = 0 0.02 µA
VCB = 50 V, IE = 0, TA = 125°C 20 µA

ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V 75
IC = 1.0 mA, VCE = 10 V 100
IC = 10 mA, VCE = 10 V 100
IC = 150 mA, VCE = 10 V* 100 300
IC = 500 mA, VCE = 10 V* 50
VCE(sat) Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA 0.4 V
IC = 500 mA, IB = 50 mA 1.6 V
VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA* 1.3 V
IC = 500 mA, IB = 50 mA 2.6 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 20 V, 250 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0, 6.0 pF
f = 100 kHz
Cibo Input Capacitance VEB = 2.0 V, IC = 0, 12 pF
f = 100 kHz

SWITCHING CHARACTERISTICS
ton Turn-on Time VCC = 30 V, IC = 150 mA, 30 ns
td Delay Time IB1 = 15 mA 8.0 ns
tr Rise Time 20 ns
toff Turn-off Time VCC = 6.0 V, IC = 150 mA 80 ns
ts Storage Time IB1 = IB2 = 15 mA 60 ns
tf Fall Time 20 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

 FFB2907A / FMBT2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

VCESAT - COLLECTOR EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
hFE - TYPICAL PULSED CURRENT GAIN

500 0.5
VCE = 5V β = 10
400 0.4
125 °C

300 0.3
25 °C

200 25 °C 0.2

100 0.1 125 ºC

- 40 °C - 40 ºC

0 0
0.1 0.3 1 3 10 30 100 300 1 10 100 500
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
VBEON - BASE EMITTER ON VOLTAGE (V)
VBESAT - BASE EMITTER VOLTAGE (V)

1
1

0.8
0.8 - 40 ºC - 40 ºC
25 °C
25 °C
0.6
0.6
125 ºC 125 ºC
0.4 0.4
β = 10
0.2 0.2 VCE = 5V

0 0
1 10 100 500 0.1 1 10 25
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current Input and Output Capacitance

vs. Ambient Temperature vs Reverse Bias Voltage
ICBO- COLLECTOR CURRENT (nA)

100 20
V CB = 35V
16
CAPACITANCE (pF)

10

12
1 C ib
8
0.1
4 C ob

0.01 0
25 50 75 100 125 0.1 1 10 50
TA - AMBIENT TEMPERATURE ( º C) REVERSE BIAS VOLTAGE (V)
 FFB2907A / FMBT2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Switching Times Turn On and Turn Off Times

vs Collector Current vs Collector Current
250 500
Ic Ic
I B1 = I B2 = I B1 = I B2 =
10 10
200 400
V cc = 15 V V cc = 15 V
TIME (nS)

TIME (nS)
ts
150 300

100 200
tf
tr
t off
50 100
td t on
0 0
10 100 1000 10 100 1000
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Rise Time vs Collector Power Dissipation vs

and Turn On Base Currents Ambient Temperature
I B1 - TURN 0N BASE CURRENT (mA)

50 1
PD - POWER DISSIPATION (W)

20 SOT-6
0.75

10
t r = 15 V
0.5
5
30 ns

2 0.25
60 ns
1
10 100 500 0
I C - COLLECTOR CURRENT (mA) 0 25 50 75 100 125 150
o
TEMPERATURE ( C)
 FFB2907A / FMBT2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)

Test Circuits
30 V

200 Ω

Ω
1.0 KΩ

- 16 V 50 Ω

≤ 200ns

FIGURE 1: Saturated Turn-On Switching Time Test Circuit

15 V - 6.0 V

Ω
1 KΩ
37 Ω

Ω
1.0 KΩ

- 30 V
50 Ω

≤ 200ns

FIGURE 2: Saturated Turn-Off Switching Time Test Circuit