Power Transistors

2SC4953
Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

■ Features 9.9±0.3 4.6±0.2

2.9±0.2
High-speed switching

3.0±0.5
●

● High collector to base voltage VCBO

15.0±0.5
● Wide area of safe operation (ASO) φ3.2±0.1

● Satisfactory linearity of foward current transfer ratio hFE

● Dielectric breakdown voltage of the package: > 5kV
1.4±0.2

4.2±0.2
2.6±0.1
1.6±0.2

■ Absolute Maximum Ratings

13.7±0.2
(TC=25˚C)
0.8±0.1 0.55±0.15

Parameter Symbol Ratings Unit

2.54±0.3
Collector to base voltage VCBO 500 V 1 2 3 5.08±0.5

VCES 500 V
Collector to emitter voltage
VCEO 400 V
1:Base
Emitter to base voltage VEBO 7 V 2:Collector
Peak collector current ICP 6 A 3:Emitter
TO–220D Full Pack Package
Collector current IC 3 A
Base current IB 1.2 A
Collector power TC=25°C 30
PC W
dissipation Ta=25°C 2.0
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 500V, IE = 0 100 µA
Emitter cutoff current IEBO VEB = 5V, IC = 0 100 µA
Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 V
hFE1 VCE = 5V, IC = 0.1A 10
Forward current transfer ratio
hFE2 VCE = 2V, IC = 1.2A 8 40
Collector to emitter saturation voltage VCE(sat) IC = 1.5A, IB = 0.3A 1.0 V
Base to emitter saturation voltage VBE(sat) IC = 1.5A, IB = 0.3A 1.5 V
Transition frequency fT VCE = 10V, IC = 0.2A, f = 1MHz 10 MHz
Turn-on time ton 1.0 µs
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
Storage time tstg 3.0 µs
VCC = 200V
Fall time tf 0.3 µs

1
Power Transistors 2SC4953

IC — VCE IC — VCE(sat) hFE — IC

5.0 8
TC=25˚C IC/IB=5 300 VCE=5V
4.5
7

Forward current transfer ratio hFE

IB=500mA
4.0 450mA
400mA TC=–25˚C
Collector current IC (A)

Collector current IC (A)

350mA 6 100
3.5 300mA 25˚C TC=125˚C 25˚C

250mA 5
3.0
125˚C
200mA –25˚C
2.5 4 30
150mA
2.0 100mA 3
1.5 10
50mA
2
1.0
1
0.5
3
0 0
0 2 4 6 8 10 12 0 0.5 1.0 1.5 2.0 2.5 0.003 0.01 0.03 0.1 0.3 1 3 10
Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A)

fT — IC ton, tstg, tf — IC Area of safe operation (ASO)

100 100 100
VCE=10V Pulsed tw=1ms Non repetitive pulse
f=1MHz Duty cycle=1% Ta=25˚C
TC=25˚C 30 IC/IB=10(2IB1=–IB2) 30 Ta=85˚C
Transition frequency fT (MHz)

30 VCC=200V
Switching time ton,tstg,tf (µs)

TC=25˚C

Collector current IC (A)

10 10 ICP
10 IC t=1ms
3 3 1s
tstg
10ms
3 1 1
ton
0.3 0.3
1 tf

0.1 0.1

0.3
0.03 0.03

0.1 0.01 0.01

0.01 0.03 0.1 0.3 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 3 10 30 100 300 1000
Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V)

Area of safe operation, reverse bias ASO

4.0
IC/IB=5
3.5 Lcoil=100µH
TC=25˚C
Collector current IC (A)

3.0

2.5

2.0

1.5

1.0

0.5

0
0 100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)