VS-10RIA Series

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Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 10 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dIF/dt and dV/dt capabilities
• Standard package
• Low thermal resistance

TO-48 (TO-208AA)
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
PRIMARY CHARACTERISTICS • Designed and qualified for industrial and consumer level
IT(AV) 10 A • Material categorization: for definitions of compliance
VDRM/VRRM
100 V, 200 V, 400 V, 600 V, 800 V, please see www.vishay.com/doc?99912
1000 V, 1200 V
VTM 1.75 V TYPICAL APPLICATIONS
IGT 60 mA • Medium power switching
TJ -65 °C to +125 °C • Phase control applications
Package TO-48 (TO-208AA)

Circuit configuration Single SCR

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
10 A
IT(AV)
TC 85 °C
IT(RMS) 25 A
50 Hz 225
ITSM A
60 Hz 240
50 Hz 255
I2t A2s
60 Hz 233
VDRM/VRRM 100 to 1200 V
tq Typical 110 μs
TJ -65 to +125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM
TYPE VOLTAGE
AND OFF-STATE VOLTAGE (1) PEAK VOLTAGE (2) AT TJ = TJ MAXIMUM
NUMBER CODE
V V mA
10 100 150 20
20 200 300
40 400 500
VS-10RIA 60 600 700
10
80 800 900
100 1000 1100
120 1200 1300
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with t  5 ms
p

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current 10 A
IT(AV) 180° conduction, half sine wave
at case temperature 85 °C
Maximum RMS on-state current IT(RMS) 25 A
t = 10 ms No voltage 225
Maximum peak, one-cycle t = 8.3 ms reapplied 240
ITSM A
non-repetitive surge current t = 10 ms 100 % VRRM 190
t = 8.3 ms reapplied Sinusoidal half wave, 200
t = 10 ms No voltage initial TJ =TJ maximum 255
t = 8.3 ms reapplied 233
Maximum I2t for fusing I2t A2s
t = 10 ms 100 % VRRM 180
t = 8.3 ms reapplied 165
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 2550 A2s
Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 1.10
V
High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.39
Low level value of
rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 24.3
on-state slope resistance
m
High level value of
rt2 (I >  x IT(AV)), TJ = TJ maximum 16.7
on-state slope resistance
Maximum on-state voltage VTM Ipk = 32 A, TJ = 25 °C, tp = 10 ms sine pulse 1.75 V
Maximum holding current IH 130
TJ = 25 °C, anode supply 12 V resistive load mA
Typical latching current IL 200

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
VDRM  600 V 200
TJ = TJ maximum, VDM = Rated VDRM
Maximum rate of rise VDRM  800 V 180
dIF/dt Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum A/μs
of turned-on current VDRM  1000 V 160
ITM = (2 x rated dI/dt) A
VDRM  1600 V 150
Typical turn-on time tgt TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C 0.9
TJ = TJ maximum,
Typical reverse recovery time trr 4
ITM = IT(AV), tp > 200 μs, dIF/dt = - 10 A/μs
μs
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V,
Typical turn-off time tq dIF/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM, 110
gate bias 0 V to 100 W
Note
• tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise TJ = TJ maximum linear to 100 % rated VDRM 100
dV/dt V/μs
of off-state voltage TJ = TJ maximum linear to 67 % rated VDRM 300 (1)
Note
(1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 10RIA120S90

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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0
TJ = TJ maximum W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current IGM TJ = TJ maximum 1.5 A
Maximum peak negative gate voltage -VGM TJ = TJ maximum 10 V
TJ = -65 °C 90
DC gate current required to trigger IGT TJ = 25 °C 60 mA
Maximum required gate trigger
TJ = 125 °C current/voltage are the lowest value 35
TJ = -65 °C which will trigger all units 6 V anode 3.0
to cathode applied
DC gate voltage required to trigger VGT TJ = 25 °C 2.0 V
TJ = 125 °C 1.0
DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated value 2.0 mA
Maximum gate current/voltage not
to trigger is the maximum value
TJ = TJ maximum,
DC gate voltage not to trigger VGD which will not trigger any unit with 0.2 V
VDRM = Rated value
rated VDRM anode to cathode
applied

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and
TJ, TStg -65 to +125 °C
storage temperature range
Maximum thermal resistance,
RthJC DC operation 1.85
junction to case
K/W
Maximum thermal resistance,
RthCS Mounting surface, smooth, flat and greased 0.35
case to heat sink
TO NUT TO DEVICE
20 (27.5) 25 lbf in
Lubricated threads
Mounting torque 0.23 (0.32) 0.29 kgf · m
(Non-lubricated threads)
2.3 (3.1) 2.8 N·m
14 g
Approximate weight
0.49 oz.
Case style See dimensions - link at the end of datasheet TO-48 (TO-208AA)

RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.44 0.32
120° 0.53 0.56
90° 0.68 0.75 TJ = TJ maximum K/W
60° 1.01 1.05
30° 1.71 1.73
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

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130 130

Maximum Allowable Case Temperature (°C)

Maximum Allowable Case Temperature (°C)
10RIA Series 10RIA Series
120 RthJC (DC) = 1.85 K/W 120 RthJC (DC) = 1.85 K/W

110 110

100 100

90 Conduction Angle 90
Conduction Period
80 80 30°
30°
60° 60°
70 90° 70
90°
120°
60 180° 60 120°
180°
50 50
DC
40 40
0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30

Average On-state Current (A) Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

35
Maximum Average On-state Power Loss (W)

180°

R th
30 120°

S
90° 2
A
K/

=
W

1
60°

K/
25 3K

W
30° /W

-D
el
ta
20 4K
RMS Limit /W
5K R
15 /W
7K
/W
Conduction Angle
10
10RIA Series 10 K
/W
5 TJ = 125°C

0
0 2 4 6 8 10 12 14 16 0
18 25 50 75 100 125
Average On-state Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

45
Maximum Average On-state Power Loss (W)

DC
40 180° R
120°
th

35
SA

90° =
1
60° K/
30 2K W
30° /W -D
el
ta
25 3K R
/W
4K
20 /W
RMS Limit
5K
15 Conduction Period /W
7 K/W
10 10RIA Series
TJ = 125°C 10 K/W
5

0
0 5 10 15 20 25 0
30 25 50 75 100 125

Average On-state Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

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200 240
At Any Rated Load Condition And With Maximum Non Repetitive Surge Current

Peak Half Sine Wave On-state Current (A)

Peak Half Sine Wave On-state Current (A)

190 Rated V RRMApplied Following Surge. Versus Pulse Train Duration. Control
220
Initial T J= 125°C Of Conduction May Not Be Maintained.
180
@ 60 Hz 0.0083 s Initial TJ = 125°C
200
170 @ 50 Hz 0.0100 s No Voltage Reapplied
160 Rated V RRMReapplied
180
150
160
140
130 140

120 120
110
10RIA Series 100 10RIA Series
100
90 80
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

1000
Instantaneous On-state Current (A)

100 TJ = 25°C

TJ = 125°C

10

10RIA Series
1
0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics

10
Transient Thermal Impedance ZthJC (K/W)

Steady State Value

R thJC = 1.85 K/W
(DC Operation)

10RIA Series

0.1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristics

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100
Rectangular gate pulse (1) PGM = 16W, tp = 4ms
a) Recommended load line for (2) PGM = 30W, tp = 2ms
rated di/dt : 10V, 20ohms

Instantaneous Gate Voltage (V)

tr <=0.5 µs, tp >= 6 µs (3) PGM = 60W, tp = 1ms
b) Recommended load line for (4) PGM = 60W, tp = 1ms
<=30% rated di/dt : 10V, 65ohms
10 tr<=1 µs, tp >= 6 µs
(a)
(b)

Tj = -65 °C
Tj = 25 °C
Tj = 125 °C
1
(4)
(1) (2) (3)
VGD

IGD 10RIA Series Frequency Limited by PG(AV)

0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

Device code VS- 10 RIA 120 M S90

1 2 3 4 5 6

1 - Vishay Semiconductors product

2 - Current code
3 - Essential part number
4 - Voltage code x 10 = VRRM (see Voltage Ratings table)
5 - None = stud base TO-48 (TO-208AA) 1/4" 28UNF-2A
M = stud base TO-48 (TO-208AA) M6 x 1
6 - Critical dV/dt:
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95333

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 Outline Dimensions
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TO-208AA (TO-48)
DIMENSIONS in millimeters (inches)
C
Ø 1.7/1.8
(Ø 0.06/0.07)
Ø 3.9/4.1
(Ø 0.15/0.16)

30.2 max.
(0.18 max.)
22.2 max..
(0.87 max.)
12.8 max.
(0.5 max.)

10.7/11.5
(0.42/0.45)

Note:
A = Anode
A C = Cathode
G = Gate
1/4"-28UNF-2A
For metric device M6 x 1

Ø 15.5
(Ø 0.61)

13.8/14.3
(0.54/0.56)
2/ .3
)

Across flats
13
.1 /3
(0 3.1
0.

0. 4
4/ .4
)
05
.0 /1
(0 24
1.

45°

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Revision: 08-Feb-17 1 Document Number: 91000

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