RPI-0128

Photointerrupter, Ultraminiature SMD type

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit Applications
Input (LED)

Forward current IF 30 mA
Reverse voltage VR 5 V DSC(Digital steal camera)
Power dissipation PD 80 mW
DVC(Digital video camera)
Collector-emitter voltage
Digital handy phone
VCEO 30 V
transistor )

Emitter-collector voltage VECO 4.5 V

Features
Output
(photo-

Collector current IC 30 mA
Collector power dissipation PC 80 mW 1) Ultraminiature SMD type.
Operating temperature Topr −25 to +85 °C 2) Gap 1.2mm.
Storage temperature Tstg −30 to +85 °C

Electrical and optical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
teristics teristics
charac- charac-

Forward voltage VF 1.2 1.35 1.5 V IF=5mA

Output Input

Reverse current IR − − 10 μA VR=5V

Dark current ICEO − − 0.1 μA VCE=10V
Peak sensitivity wavelength λP − 800 − nm −
IC1 5.0 − 25 mA VCE=5V, IF=20mA
Collector current
− VCE=5V, IF=5mA
characteristics

IC2 1.0 5 mA
Collector-emitter saturation voltage VCE(sat) − − 0.4 V IF=20mA, IC=0.1mA
Infrared Transfer

Rise time tr − 10 − μs
Response time VCC=5V, IF=20mA, RL=100Ω
Fall time tf − 10 − μs
Cut-off frequency fC − 1 − MHz
emitter

IF=5mA
diode

∗ Non-coherent Infrared light emitting diode used.

light

Peak light emitting wavelength λP − 850 − nm

− − μs VCC=5V, IC=1mA, RL=100Ω

transistor

Response time tr tf 10
∗ This product is not designed to be protected against electromagnetic wave.
Photo

Maximum sensitivity wavelength λP − 800 − nm −

Electrical and optical characteristics curves

120
RELATIVE COLLECTOR CURRENT : Ic (%)

35 20
FORWARD CURRENT : IF (mA)

100
FORWARD CURRENT : IF (mA)

30
d 16

80 25
Ta=75°C
12 50°C
20
60 25°C
0°C
15 8 −25°C
40
10
20 4
5

0 0
0 0.5 1 1.5 2 0 0 0.5 1.0 1.5 2.0
-25 0 25 50 75 100
DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V)

Fig.1 Relative output current vs. Fig.3 Forward current vs. forward
distance ( ) Fig.2 Forward current falloff voltage
RELATIVE COLLECTOR CURRENT : Ic ( %)

120
RELATIVE COLLECTOR CURRENT : Ic (%)
COLLECTOR POWER DISSIPTION : PD/PC (mW)

140
d 120
100 120
100
100
80 PD PC IF=5mA
80
80
60
60
60
POWER DISSIPATION /

40 20mA
40
40

20 20 20
VCE=5V
0 0 0
−20 0 20 40 60 80 100 -25 0 25 50 75 100
0 0.4 0.8 1.2 1.6
DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C)

Fig.4 Relative output current vs. Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient
distance ( ) dissipation vs. ambient temperature temperature
 Dimensions (Unit : mm)

Notes:
1. Unspecified tolerance
2.5 ±0.15 shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.

1.6 ±0.1

Optical center
1.2 ±0.15

(0.34)
2-0.1

(0.1)
C0.3 (0.2)
A

0.6
Gate

0.05 -0.05
1.8 ±0.1

+0.1
0.2

(0.65)
0.45
A' A-A' Cross section

2 3

1.4
0.6
1 4

0.9
2
Internal connection diagram
Anode Collector

Cathode Emitter

14 800
VCC=5V 1000
COLLECTOR CURRENT : IC (mA)

12 700 IC=0.1mA
DARK CURRENT : ICEO (nA)

tr
RESPONSE TIME : tr (μs)

600 100
10
tf VCE=30V
500 VCE=20V
8 10 VCE=10V
400
6
300 1
4
200

2 VCE=5V 100 0.1

Ta=25°C
0 0
0 5 10 15 20 1 10 100 −25 0 25 50 75 100
FORWARD CURRENT : IF (mA) LOAD RESISTANCE : RL (kΩ) AMBIENT TEMPERATURE : Ta (°C)

Fig.7 Collector current vs. Fig.8 Response time vs. Fig.9 Dark current vs.
forward current load resistance ambient temperature

16 Input VCC
IF=20mA
COLLECTOR CURRENT : IC (mA)

14

12
15mA Input
10
Output
RL
90%
8
10mA 10%
6
Output
td
4 tr tf
5mA
td : Delay time
2
t r : Rise time (time for output current to rise from
0 10% to 90% of peak current)
0 2 4 6 8 10 t f : Fall time (time for output current to fall from 90%
COLLECTOR TO EMITTER VOLTAGE: VCE (V) to 10% of peak current)

Fig.10 Output characteristics Fig.11 Response time measurement circuit 2010.07 Rev.B
 Notice

Notes
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RPI-0128