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SCIENCE’S COMPASS ● REVIEW
REVIEW: BOTANY
T
here are two main types of carbon scattering) over long nanotube lengths, en- and from ⬃1.4 to at least 100 nm for
nanotubes that can have high structural abling them to carry high currents with es- MWNTs (6, 11). Nanotube properties can
perfection. Single-walled nanotubes sentially no heating (2, 3). Phonons also thus be tuned by changing the diameter. Un-
(SWNTs) consist of a single graphite sheet propagate easily along the nanotube: The fortunately, SWNTs are presently produced
seamlessly wrapped into a cylindrical tube measured room temperature thermal conduc- only on a small scale and are extremely ex-
(Fig. 1, A to D). Multiwalled nanotubes tivity for an individual MWNT (⬎3000 pensive: High-purity samples cost about
(MWNTs) comprise an array of such nano- W/m䡠K) is greater than that of natural dia- $750/g, and samples containing substantial
tubes that are concentrically nested like rings mond and the basal plane of graphite (both amounts of impurities cost about $60/g (12).
of a tree trunk (Fig. 1E). 2000 W/m䡠K) (4). Superconductivity has also Many researchers have depended on produc-
Despite structural similarity to a single been observed, but only at low temperatures, tion facilities started by Rick Smalley of Rice
sheet of graphite, which is a semiconductor with transition temperatures of ⬃0.55 K for University for purified SWNTs, on laser ab-
with zero band gap, SWNTs may be either 1.4-nm-diameter SWNTs (5) and ⬃5 K for lation–produced nanotubes, and now on the
metallic or semiconducting, depending on the 0.5-nm-diameter SWNTs grown in zeolites high-pressure carbon monoxide (HiPco)
sheet direction about which the graphite sheet (6). nanotubes of Carbon Nanotechnology, Inc.
is rolled to form a nanotube cylinder. This Small-diameter SWNTs are quite stiff and (CNI). CNI “hopes to make around 9 kilo-
direction in the graphite sheet plane and the exceptionally strong, meaning that they have grams a day by 2002, and could be turning
nanotube diameter are obtainable from a pair a high Young’s modulus and high tensile out thousands of kilograms per week by
of integers (n, m) that denote the nanotube strength. Literature reports of these mechan- 2004” (13, p. 144); it is hoped that this will
type (1). Depending on the appearance of a ical parameters can be confusing, because bring the price down.
belt of carbon bonds around the nanotube some authors use the total occupied cross- All currently known synthesis methods
diameter, the nanotube is either of the arm- sectional area and others use the much small- for SWNTs result in major concentrations of
chair (n ⫽ m), zigzag (n ⫽ 0 or m ⫽ 0), or er van der Waals area for defining Young’s impurities. Carbon-coated metal catalyst con-
chiral (any other n and m) variety. All arm- modulus and tensile strength. With the total taminates the nanotubes of the HiPco route,
chair SWNTs are metals; those with n – m ⫽ area per nanotube in a nanotube bundle for and both carbon-coated metal catalyst and,
3k, where k is a nonzero integer, are semi- normalizing the applied force to obtain the typically, ⬃60% forms of carbon other than
conductors with a tiny band gap; and all applied stress, the calculated Young’s modu- nanotubes are formed in the carbon-arc route
others are semiconductors with a band gap lus for an individual (10, 10) nanotube is (11). These impurities are typically removed
that inversely depends on the nanotube ⬃0.64 TPa (7), which is consistent with mea- by acid treatment, which introduces other
diameter (1). surements (8). Because small-diameter nano- impurities, can degrade nanotube length and
The electronic properties of perfect tube ropes have been extended elastically by perfection, and adds to nanotube cost. Anoth-
MWNTs are rather similar to those of perfect ⬃5.8% before breaking, the SWNT strength er problem, especially for electronic devices,
SWNTs, because the coupling between the calculated from the product of this strain and is that the usual synthetic routes result in
cylinders is weak in MWNTs. Because of the modulus is ⬃37 GPa (8, 9), which is close to mixtures of various semiconducting and me-
nearly one-dimensional electronic structure, the maximum strength of silicon carbide tallic nanotubes. Metallic SWNTs can be se-
electronic transport in metallic SWNTs and nanorods (⬃53 GPa) (10). This modulus of lectively destroyed by electrical heating, so
MWNTs occurs ballistically (i.e., without ⬃0.64 TPa is about the same as that of silicon that only the semiconducting nanotubes need-
carbide nanofibers (⬃0.66 TPa) but lower ed for nanotube field-effect transistors (NT-
than that of highly oriented pyrolytic graphite FETs) survive (14). However, no route to
1
NanoTech Institute, 2Department of Chemistry, 3De- (⬃1.06 TPa) (10). More impressive and im- substantial quantities of SWNTs of one type
partment of Physics, University of Texas at Dallas,
Richardson, TX 75083– 0688, USA. 4Department of
portant for applications needing light struc- is yet known.
Physics, Georgia Institute of Technology, Atlanta, GA tural materials, the density-normalized mod- Commercial access to MWNTs is less
30332, USA. ulus and strength of this typical SWNT are, problematic. Hyperion Catalysis Internation-
*To whom correspondence should be addressed. E- respectively, ⬃19 and ⬃56 times that of steel al, Inc., pioneered the production of MWNTs
mail: ray.baughman@utdallas.edu wire and, respectively, ⬃2.4 and ⬃1.7 times in multiton quantities in the early 1990s.
A 2500
B
Other
and patents (x10, black)
Annual carbon nanotube
Europe
5%
2000 9%
publications (blue)
2
US Japan 1
1500 17% 48%
1000
1
US
500 6% 2
Korea Japan 2
6% 1
0 China 5%
91 92 93 94 95 96 97 98 99 0 1 4%
Publication year
C Australia
D Batteries and
Other
supercapacitors
UK 4% Other 3%
7%
5% 13% Synthesis and
Electron emission processing
US 25% 41%
Germany 49%
6%
Fig. 4. (A) Comparison of the annual number of scientific publications with (world or European) patent filings and issuances that originate from differ-
the number of patent filings and issuances for the carbon nanotube area ent countries. (D) Patent filings and issuances divided according to the main
(71). (B) Percentages of total patent filings and issuances made by individ- area of the invention. Although the database for these figures is dependent
uals in a country or region and filed either in the same location (superscript on the search method and involves judgments in assignments, the infor-
1) or in a different location (superscript 2). (C) Percentages of multicountry mation shown here is thought to be reliable.