Escolar Documentos
Profissional Documentos
Cultura Documentos
Dietmar Knipp
Ref.: Apple
Ref.: IBM
Critical
10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 1 101 dimension (m)
Ref.: Palo Alto Research Center
1 Introduction
1.1 Motivation
1.2 A little bit of History
1.2.1 The bipolar transistor (BJT)
1.2.2 The metal oxide field effect transistor (MOSFET)
1.2.3 Integrated circuits
1.2.3 Overview of Inventions in the field of electronics
1.3 Basic Electronic Device Building Blocks
1.4 Electronic Materials
1.5 The silicon Roadmap
1.6 What‘s next? (Predictions and Outlook)
1.6.1 Silicon electronics
1.6.2 Nanotechnology
1.6.3 Novel electronic devices
References
1 Introduction
1.1 Motivation
1 Introduction
1.1 Motivation
VGS
IG ID VDS
IS
n+ n+
Bulk
Photo of the first metal oxide Schematic cross section of a metal oxide
semiconductor field effect semiconductor field effect transistor
transistor (MOSFET). The (MOSFET).
transistor was realized in
1960 [Ref.: M.S. Sze].
All electronic devices, like bipolar transistors, solar cells, MOS field effect
transistors, can be derived from these basic building blocks. In almost all
cases a real electronic device consists of several of these building blocks.
Example 1:
A real pn diode consists of a pn junction and two metal semiconductor
interfaces.
Example 2:
A real metal oxide semiconductor field effect transistor (MOSFET) consists
of a metal oxide semiconductor structure, two pn junctions and 3 metal
semiconductor interfaces.
1.6.2 Nanotechnology
1.6.2 Nanotechnology
Carbon Nanotues
1.6.2 Nanotechnology
Molecular and Organic Electronics
Carrier
Mobility
CMOS technology
CPU, memory products
103
Low Cost ICs,
102 drivers LCD displays
crystalline
silicon
poly 101
Displays,smart cards
silicon
100
Nanocrystalline
silicon Radio frequency
Amorphous 10-1 indentification tags
silicon E paper, E ink
Small 10-2
molecules
polymers cm2/Vs
References