UTC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE

TRANSISTOR

DESCRIPTION
The UTC 2SB772 is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.

FEATURES
*High current output up to 3A 1
*Low saturation voltage
*Complement to 2SD882

TO-126

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Dissipation( Tc=25°C) Pc 10 W
Collector Dissipation( Ta=25°C) Pc 1 W
Collector Current(DC) Ic -3 A
Collector Current(PULSE) Ic -7 A
Base Current IB -0.6 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO VCB=-30V,IE=0 -1000 nA
Emitter Cut-Off Current IEBO VEB=-3V,Ic=0 -1000 nA
DC Current Gain(note 1) hFE1 VCE=-2V,Ic=-20mA 30 200
hFE2 VCE=-2V,Ic=-1A 100 150 400
Collector-Emitter Saturation Voltage VCE(sat) Ic=-2A,IB=-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) Ic=-2A,IB=-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product fT VCE=-5V,Ic=-0.1A 80 MHz
Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 45 pF
Note 1:Pulse test:PW<300µs,Duty Cycle<2%

UTC UNISONIC TECHNOLOGIES CO. LTD 1

QW-R204-002,A
UTC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR

CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100-200 160-320 200-400

TYPICAL PERFORMANCE CHARACTERISTICS

Fig.2 Derating curve of safe

Fig.1 Static characteristics Fig.3 Power Derating
operating areas

150 12
-Ic,Collector current(A)

1.6
-IB=9mA
- Ic Derating(%)

Power Dissipation(W)
-IB=8MA
-IB=7mA
1.2 100 8
-IB=6mA S/
b
-IB=5mA lim
ite
Di

0.8 d
ss

-IB=4mA
ip

50
at

4
-IB=3mA
io
n

0.4
lim

-IB=2mA
ite

-IB=1mA
d

0 0 0
0 4 8 12 16 20 -50 0 50 100 150 200 -50 0 50 100 150 200

-Collector-Emitter voltage(V) Tc,Case Temperature(°C) Tc,Case Temperature(°C)

Fig.4 Collector Output Fig.5 Current gain-

Fig.6 Safe operating area
capacitance bandwidth product
3 3 1 Ic(max),Pulse
10 10 10

0.
1m
10 1m
mS

S
S
Output Capacitance(pF)

Ic(max),DC
FT(MHz), Current gain-

-Ic,Collector current(A)

VCE=5V
IE=0
bandwidth product

f=1MHz
2 2 0
10 10 10

IB=8mA

1 1 -1
10 10 10

0 0 -2
10 10 10
0 -1 -2 -3 -2 -1 0 1 0 1 2
10 10 10 10 10 10 10 10 10 10 10

-Collector-Base Voltage(v) Ic,Collector current(A) Collector-Emitter Voltage

Fig.7 DC current gain Fig.8 Saturation Voltage

3 4
10 10
VCE=-2V
-Saturation Voltage(mV)

VBE(sat)
FE

3
10
DC current Gain,H

2
10

2
10

1 VCE(sat)
10
1
10

0 0
10 10
0 1 2 3 4 0 1 2 3 4
10 10 10 10 10 10 10 10 10 10

-Ic,Collector current(mA) -Ic,Collector current(mA)

UTC UNISONIC TECHNOLOGIES CO. LTD 2

QW-R204-002,A