VS-85HF(R) 40M8

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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 85 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V VRRM
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-5 (DO-203AB)
TYPICAL APPLICATIONS
• Battery chargers
PRIMARY CHARACTERISTICS
• Converters
IF(AV) 85 A
Package DO-5 (DO-203AB)
• Power supplies
Circuit configuration Single • Machine tool controls
• Welding

MAJOR RATINGS AND CHARACTERISTICS

85HF(R)
PARAMETER TEST CONDITIONS UNITS
400
85 A
IF(AV)
TC 140 °C
IF(RMS) 133 A
50 Hz 1700
IFSM A
60 Hz 1800
50 Hz 14 500
I2t A2s
60 Hz 13 500
VRRM 400 V
TJ -65 to +180 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE IRRM MAXIMUM
VOLTAGE
TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT TJ = TJ MAXIMUM
CODE
V V mA
VS-85HF(R) 40 400 500 9

Revision: 11-Jan-18 1 Document Number: 93529

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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS
Maximum average forward current  85 A
IF(AV) 180° conduction, half sine wave
at case temperature 140 °C
Maximum RMS forward current IF(RMS) 133 A
t = 10 ms No voltage  1700
Maximum peak, one-cycle forward, t = 8.3 ms reapplied 1800
IFSM A
non-repetitive surge current t = 10 ms 100 % VRRM 1450
t = 8.3 ms reapplied Sinusoidal half wave, 1500
t = 10 ms No voltage  initial TJ = TJ maximum 14 500
t = 8.3 ms reapplied 13 500
Maximum I2t for fusing I2t A2s
t = 10 ms 100 % VRRM 10 500
t = 8.3 ms reapplied 9400
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A2s
Value of threshold voltage
0.68
(up to 1200 V)
VF(TO) TJ = TJ maximum V
Value of threshold voltage
0.69
(for 1400 V, 1600 V)
Value of forward slope resistance
1.62
(up to 1200 V)
rf TJ = TJ maximum mW
Value of forward slope resistance
1.75
(for 1400 V, 1600 V)
Maximum forward voltage drop VFM Ipk = 267 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.2 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS
Maximum junction operating and
TJ, TStg -65 to +180 °C
storage temperature range
Maximum thermal resistance, junction to case RthJC DC operation 0.35
K/W
Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25
Maximum shock 1500
Maximum constant vibration 50 Hz 20 g
Maximum constant acceleration Stud outwards 5000
Not lubricated thread, tighting on nut 3.4 (30)
Maximum allowable mounting torque Lubricated thread, tighting on nut 2.3 (20) N·m
+0 %, -10 % Not lubricated thread, tighting on hexagon 4.2 (37) (lbf · in)
Lubricated thread, tighting on hexagon 3.2 (28)
17 g
Approximate weight Unleaded device
0.6 oz.
Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB)

RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.10 0.08
120° 0.11 0.11
90° 0.13 0.13 TJ = TJ maximum K/W
60° 0.17 0.17
30° 0.26 0.26
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Revision: 11-Jan-18 2 Document Number: 93529

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Maximum Allowable Case Temperature (°C)

Maximum Allowable Case Temperature (°C)

1 80 180
85HF(R) Series 100 V to 1200 V 85HF(R) Series 100 V to 1200 V
RthJC (DC) = 0.35 K/W RthJC (DC) = 0.35 K/W
1 70 170

Conduction Angle Conduction Period

1 60 160

1 50 150
30°
30°
60° 60°
1 40 90° 140 90°
120° 120°
180°a 180° DC
1 30 130
0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140

IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

90
180°

0.

R thS
1.

K/
120°

7
80 5

K/
K/
Maximum Average Forward

A
90° W

=0
70 60° 2K

.5
/W
30°

K/
Power Loss (W)

60

W
-Δ
RMS Limit 3K
50 /W

R
40
5 K/
Conduction Angle W
30
85HF(R) 10 K/W
20
Tj = 180 ˚C
10

0
0 10 20 30 40 50 60 70 80 90 20 40 60 80 100 120 140 160 180

IF(AV) - Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 3 - Forward Power Loss Characteristics

120
DC
0.

R th

180°
7
Maximum Average Forward

K/

SA

100 120°
K

W
/W

90°
0.

1.5
5

60°
K/

K/
Power Loss (W)

80 W
W

30°
-Δ

2K
/W
R

60 RMS Limit
3K
/W
40 Conduction Period 5 K/W
85HF(R)
20 10 K/W
Tj = 180 ˚C

0
0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 160 180

IF(AV) - Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 4 - Forward Power Loss Characteristics

Revision: 11-Jan-18 3 Document Number: 93529

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Peak Half Sine Wave Forward Current (A)

1600 10 000

Instantaneous Forward Current (A)

At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
1400 Initial Tj = Tj Max. Tj = 25°C
@ 60 Hz 0.0083 s
Tj = Tj Max.
@ 50 Hz 0.0100 s
1200 1000

1000

800 100
85HF(R) Series
600 85HF(R) Series up to 1200 V

400 10
1 10 100 0 1 2 3 4 5 6
Number Of Equal Amplitude
Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics
Peak Half Sine Wave Forward Current (A)

1800

ZthJC - Transient Thermal Impedance (K/W)

10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Steady State Value
1600
Initial Tj = Tj Max. RthJC = 0.35 K/W
No Voltage Reapplied
1400 1 (DC Operation)
Rated Vrrm Reapplied
1200

1000 0.1

800

600 0.01

400 85HF(R) Series 85HF(R) Series

200 0.001
0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10
Pulse Train Duration (s) t - Square Wave Pulse Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Device code VS- 85 HF R 40 M8

1 2 3 4 5 6

1 - Vishay Semiconductors product

2 - 85 = standard device
3 - HF = standard diode
4 - None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
5 - Voltage code x 10 = VRRM (see Voltage Ratings table)
6 - M8 = stud base DO-5 (DO-203AB) M8 x 1.25

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95342

Revision: 11-Jan-18 4 Document Number: 93529

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 Outline Dimensions
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Vishay Semiconductors
DO-5 (DO-203AB) for 85HF(R), 86HF(R) and 88HF(R)Series
DIMENSIONS FOR 85HF(R) SERIES in millimeters (inches)

Ø 15.1 (0.59)

6.1/7
(0.24/0.27)

4 (0.16)

4 (0.16) MIN.

25.4 (1) MAX.

10.8 (0.42)
11.4 (0.45)

11.1 ± 0.4
(0.44 ± 0.02)

1/4" 28UNF-2A
For metric devices: M8 x 1.25
M6 x 1

1.20 (0.04) 17.35 (0.68)

Revision: 20-Nov-2018 1 Document Number: 95342

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 Outline Dimensions
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DIMENSIONS FOR 86HF(R) SERIES in millimeters (inches)

12.2 (0.48) MAX.

Ø 7 (0.28) MAX.

123 (4.84)
MAX.
134.4 (5.29)
MAX.

Revision: 20-Nov-2018 2 Document Number: 95342

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 Outline Dimensions
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DIMENSIONS 88HF(R) SERIES in millimeters (inches)

Ø 15 (0.59)

7 (0.27)

8.3 (0.33) max.

3.8 (0.15)

4 (0.16) min.
25.4 (1) max.

10.8 (0.42)
11.4 (0.45)
5 (0.20) max.
(0.44 ± 0.02)
11.1 ± 0.4

1/4" 28 UNr - 2A
17.35 (0.68)
2.15 (0.08)

Revision: 20-Nov-2018 3 Document Number: 95342

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