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Circuit Characterization
and Performance
Estimation
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Resistance Estimation
• The resistance of uniform slab of
conducting material may be defined as
   l 
R    
 t  w 
where   resistivity
t  thicknes
l  conductor length
w  conductor width
• It also can be given as
l 
R  RS  
 w
where Rs is the sheet resistance having
units of Ω/square
• Thus to obtain the resistance of a
conductor on a layer, multiply the sheet
resistance Rs by the ratio of the length to
width of the conductor
• The
resistances
are equivalent
since the ratio
of length to
width is equal
• Typical
sheet
resistances
• The channel resistance may be given by
L
Rc  k  
W 
1
Where k 
cox Vgs  Vt 
• Resistance
of non-
rectangular
regions
• Resistance
of non-
rectangular
regions
• Table 4.2
Contacts and via resistance
• The resistance associated with them is
dependent on the contacted materials and
proportional to the area of the contact
• Reducing the contact size will increase the
resistance
• Typical range: 0.25 to few tens of Ωs
• For low resistance interlayer connections
multiple contacts are used
Capacitance Estimation
• Dynamic response depends upon parasitic
capacitances
• Interconnection capacitances are formed
by metal, poly, and diffusion wires
• Total capacitance consists of
– Gate capacitance
– Diffusion capacitance
– Routing capacitance
MOS Capacitor Characteristics

• The capacitance - voltage characteristics
of MOS capacitor depend on the state of
the semiconductor surface
• The surface may be in
– Accumulation
– Depletion
– inversion

• MOS capacitance
accumulation depletion

• The accumulation layer is formed when
Vg< 0
• The negative charge on the gate attracts
holes toward silicon surface
• The MOS structure behaves like a parallel-
plate capacitor
  SiO2  0 
• The gate capacitance is CO    A
 tox 

• When a small positive voltage is applied to
the gate with respect to the substrate, a
depletion layer is formed in the p-substrate
directly under the gate
• The positive gate voltage repels holes,
leaving a negatively charged region
depleted of carriers

• The charge density is proportional to
– Doping concentration, N
– Charge, q
– Depth of depletion region, d
– Gate to source voltage, increases

• The depletion capacitance is given by
  o Si 
Cdep   A
 d 
where d  depletion layer depth
 Si  dielectric cons tan t of silicon, 12

• As the depth of depletion region increases,
the capacitance from gate to substrate will
decrease
• The total capacitance is given by
CoCdep
C gb 
Co  Cdep

Inversion As function of Vgs

• Increasing gate voltage, creates n channel
thereby increasing conductivity
• Surface inversion restores low frequency
capacitance Co
• The dynamic capacitance remains the
same as for the maximum depletion
situation

• The capacitance may be given by
Cgb = CO Low frequency
CoCdep
C gb   Cmin High frequency
Co  Cdep
MOS device Capacitance

• Parasitic capacitance for an MOS trasistor

• Cgs, Cgd = gate to channel, lumped at the
source and the drain regions of the
channel respectively
• Csb, Cdb = source and drain capacitances
to bulk / substrate
• Cgb = gate to bulk capacitance
• The total gate capacitance is
Cg = Cgb + Cgs + Cgd

Off region
• for Vgs< Vt when MOS device is off, no
channel
• Cgs = Cgd = 0
• Cgb can be modeled as the series
combination of the two capacitors (Co and
Cdep)

Non-saturation region
• for Vgs - Vt > Vds channel formation takes
place
• Cgs and Cgd are now significance
• These capacitances are dependent on
gate voltage
• Their value may be estimated
1   SiO2  0 
C gd  C gs    A
2  tox 
• Cgb effectively fall to zero

• Circuit symbols for parasitic capacitances

Saturation region
• for Vgs - Vt < Vds channel is heavily inverted
• Drain region of the channel is pinched off
• Cgd = 0
• Cgs increases to approximately to
2   SiO2  0 
  A
3  tox 

• Approximation of intrinsic MOS gate
capacitance

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MOS Capacitor Characteristics

MOS Capacitor Characteristics

MOS Capacitor Characteristics

MOS Capacitor Characteristics

MOS Capacitor Characteristics

MOS Capacitor Characteristics

MOS Capacitor Characteristics

MOS Capacitor Characteristics

MOS Capacitor Characteristics

MOS Capacitor Characteristics

Cgb = CO Low frequency

MOS device Capacitance

MOS device Capacitance

MOS device Capacitance

MOS device Capacitance

MOS device Capacitance

• Cgb effectively fall to zero

MOS device Capacitance

MOS device Capacitance

MOS device Capacitance

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